OPTOELECTRONIC SEMICONDUCTOR COMPONENT

Abstract

The optoelectronic semiconductor component (1) comprises a semiconductor body (2) having an active zone (23) and segments (3, 4), as well as a shielding structure (5). Two adjacent segments (3, 4) are separated by a trough (6) that penetrates the active zone (23) starting from a top side (26) of the semiconductor body (5). The shielding structure (5) is arranged on the top side (26) and / or within the trough (5) and is impermeable for radiation (7) generated in the active zone (23).

Description

[0001] Description

[0002] OPTOELECTRONIC SEMICONDUCTOR COMPONENT

[0003] An optoelectronic semiconductor component is specified.

[0004] One of the problems to be solved is to provide an optoelectronic semiconductor component that has improved beam quality.

[0005] This problem is solved by the subject matter having the features of independent patent claim 1. Advantageous embodiments and further developments are the subject matter of the dependent patent claims.

[0006] According to at least one embodiment of the optoelectronic semiconductor component, it comprises a semiconductor body with an active zone and segments. The active zone is arranged, for example, between a first semiconductor layer and a second semiconductor layer of the semiconductor body. For example, the first semiconductor layer has charge carriers of a first type, for example p-type charge carriers or n-type charge carriers. The second semiconductor layer has, for example, charge carriers of a second type, in particular of a type opposite to the first type. For example, the first semiconductor layer is p-doped and the second semiconductor layer is n-doped. The first and second semiconductor layers can each also comprise two or more sublayers and thus each be formed as semiconductor layer sequences. For example, the semiconductor body is based on a nitride compound semiconductor material, such as Al n Inj__n _ m Ga m N, or on a phosphide compound semiconductor material such as Al n In]__ n-m Ga m P, or on an arsenide compound semiconductor material such as Al n In]__ n-m Ga m Ace or Al n In]__ n-m Ga m AsP, where 0 < n < 1, 0 < m < 1 and m + n < 1. The semiconductor body can comprise dopants as well as additional components. For the sake of simplicity, however, only the essential components of the crystal lattice of the semiconductor body are given, i.e. Al, As, Ga, In, N and P, even if these can be partially replaced and / or supplemented by small amounts of other substances. The semiconductor body is preferably based on a III / V compound semiconductor material such as GaN.

[0007] The semiconductor body is, for example, formed in one piece. In particular, the semiconductor body is manufactured in a single growth process. The semiconductor body is preferably divided into segments after the completion of the growth process.

[0008] The active zone is designed, for example, to generate electromagnetic radiation in a wavelength range between the IR and UV ranges. During normal operation, radiation in the visible wavelength range is preferably generated in the active zone.

[0009] The active zone includes in particular at least one

[0010] Quantum well structure, for example in the form of a quantum dot, a single quantum well (SQW for short), or in the form of a multi-quantum well (MQW for short), for radiation generation. The active zone also contains one, preferably several, secondary well structures.

[0011] According to at least one embodiment, the optoelectronic component comprises a shading structure. The shading structure comprises, for example, one or more shading elements. Alternatively or additionally, the shading structure comprises one or more absorption elements.

[0012] According to at least one embodiment, two adjacent segments are separated by a trench. The trench completely penetrates the active zone, starting from a top side of the semiconductor body. In particular, the trench provides electrical and / or optical separation of the segments. The segments can preferably be controlled and operated independently of one another. The segments form, in particular, independent optoelectronic components with preferably different functions. The trench is, for example, introduced into the semiconductor body after the growth process, for example by means of an etching process. The segments are, in particular, connected to one another monolithically.

[0013] The upper side of the semiconductor body is formed, for example, on the first semiconductor layer. The upper side is, in particular, a surface of the first semiconductor layer that lies opposite the active zone. The trench preferably completely penetrates the first semiconductor layer. For example, the trench projects into the second semiconductor layer.

[0014] It is possible that the trench was used as a recess in the

[0015] semiconductor body. In this case, in a plan view of the top side of the semiconductor body, the trench is completely surrounded by the semiconductor body. In particular, in this case, the first semiconductor layer and the active zone are formed contiguously.

[0016] Alternatively, it is possible for the trench to completely separate the first semiconductor layer and, if applicable, the active zone. For example, the trench runs across the entire width of the semiconductor body, as seen in plan view. In this case, the first semiconductor layer and, if applicable, the active zone are not contiguous. This means, in particular, that the active zone and the first semiconductor layer each comprise at least two sections that are not in direct contact with one another.

[0017] For example, at least one of the segments, for example the first segment, is designed to generate electromagnetic radiation. The radiation is, for example, laser radiation. The first segment is configured, in particular, to couple radiation into the trench.

[0018] A second segment is configured, for example, to couple in this radiation from the trench. The first segment and the second segment are, in particular, adjacent. The second segment is, for example, a modulator which modulates, for example, amplifies, the radiation of the first segment. For example, a main emission surface of the optoelectronic component is arranged on a side opposite the trench in the region of the second segment. A main emission direction of the optoelectronic component is, in particular, perpendicular to the main emission surface. Furthermore, further segments may be present which follow the second segment. The segments are each separated and spaced from one another by a trench. The segments may, for example, be arranged one after the other parallel to a main emission direction of the semiconductor component, with a trench being arranged between every two adjacent segments.

[0019] According to at least one embodiment, the shading structure is arranged on the top side and / or within the trench. For example, the shading structure is configured to shade radiation that propagates within the trench during intended operation and leaves it as scattered radiation, for example due to coupling losses. The shading is preferably effected in such a way that portions of the scattered radiation that propagate in the direction of the main emission direction of the optoelectronic semiconductor component and / or at least partially in the direction of the semiconductor body are suppressed.

[0020] According to at least one embodiment, the shading structure is opaque and / or at least partially absorbent for radiation generated in the active zone, that is to say, for example, radiation that propagates within the trench during intended operation. In particular, the shading structure is opaque and / or at least partially absorbent for scattered radiation. Opaque here and below means, in particular, that a transmittance of the shading structure is less than 20% or less than 15% or less than 10% or preferably less than 5%. A material of the shading structure preferably has a high absorbent degree, which is, for example, more than 50% or more than 60% or more than 70%.

[0021] In at least one embodiment, the optoelectronic component comprises a semiconductor body with an active zone and segments, and a shading structure. Two adjacent segments are separated by a trench that penetrates the active zone starting from a top side of the semiconductor body. The shading structure is arranged on the top side and / or within the trench and is opaque to the radiation generated in the active zone.

[0022] The optoelectronic semiconductor component described here is based on the following special technical features, among others. A segmented semiconductor component allows several components with different functions to be generated monolithically on a chip. For example, a laser element can be combined with a detection element, such as a photodiode, or with an optical modulator, such as an amplifier or adjustable absorber. To electrically and optically separate such segments, the active zone between the segments is removed by forming a trench. These segments can be independently electrically contacted, for example, via separate metallizations on an upper side of the semiconductor body.

[0023] Coupling radiation from one segment to another across the trench always involves a loss due to the general divergence of the radiation. The loss is determined, for example, by a failure to couple radiation from one segment to another. This can result in losses due to radiation being emitted from the trench in the form of scattered radiation. Coupling of radiation into undesired regions of the semiconductor component, such as a substrate, is also possible.

[0024] The aim is to make the coupling of radiation from one segment to the other as efficient as possible in order to increase the overall efficiency of the semiconductor device. However, complete overcoupling of the trench typically cannot be achieved.

[0025] The semiconductor component described here utilizes, among other things, the concept of providing a shading structure. The shading structure is arranged in such a way that portions of unwanted scattered radiation propagating in the direction of a main emission direction of the semiconductor component are suppressed. This allows the scattered light to be kept away from an application downstream of the semiconductor component, thereby increasing the overall beam quality of the optoelectronic semiconductor component and achieving improved image quality.

[0026] If, for example, a laser element is used as the first segment and the second element forms an optical amplifier, the semiconductor component is particularly suitable as a light source in projection applications. Examples of such applications can be found in the field of so-called augmented reality, or AR for short, and in the field of so-called virtual reality, or VR for short. During operation, laser radiation is coupled from the first segment directly into the trench via a first flank of the trench. Coupling into the second segment occurs via an opposite second flank of the trench. The radiation is then coupled out in a main radiation direction towards the application via a facet of the semiconductor component in the region of the second segment.

[0027] Such projection applications often require a high dynamic range. This high dynamic range can preferably be achieved by amplification within the second segment. This entails at least partial population inversion in the active zone in the region of the second segment without exceeding a laser threshold.

[0028] To achieve a particularly wide dynamic range, low-intensity radiation is preferably coupled into the second segment from the trench during operation. For example, the trench can be specifically designed to increase radiation loss within the trench and allow only low-intensity radiation to be coupled into the second segment.

[0029] At the same time, suppression of scattered radiation is particularly important in such applications, as this can interfere with the amplified radiation from the second segment and thus generate interference signals in the application. A shading structure described here is therefore particularly advantageous in applications requiring a high dynamic range.

[0030] According to at least one embodiment of the optoelectronic

[0031] Semiconductor component, the shading structure comprises a

[0032] Shading element which, in a plan view of the upper side, at least partially covers at least the second segment. If the shading structure comprises a plurality of shading elements, the shading element of this embodiment is, for example, a first shading element. The shading element is structured, for example, as a layer on the upper side. The shading element comprises, for example, a metal and / or a semiconductor material which reflects and / or absorbs scattered radiation. Alternatively or additionally, the shading element comprises a dielectric which is designed to be reflective and / or preferably absorbent for this radiation. For example, the shading element comprises one of the following materials or a combination of the following materials: gold, silver, aluminum, copper, platinum, silicon nitride, silicon, germanium, photoresists, mold materials, carbon-filled resists, organic coatings.

[0033] According to at least one embodiment of the optoelectronic component, the shading element at least partially covers the first segment, the second segment and the trench in a plan view. For example, the trench is completely covered. The shading element is, for example, the first shading element, as explained in connection with the previously described embodiment. The material of the shading element in this embodiment is preferably electrically insulating. By partially or completely covering the trench with a shading element, a particularly large portion of the scattered radiation emerging from the trench can advantageously be shaded. According to at least one embodiment, the shading structure comprises a shading element that is arranged directly on the upper side.If the shading structure already has a first shading element, the shading element of this embodiment is, in particular, a second shading element. The shading element is, for example, in direct contact with the upper side. In particular, the shading element is in direct contact with the first semiconductor layer. The shading element can have the same structure and, in particular, the same materials as the previously explained shading element.

[0034] According to at least one embodiment of the optoelectronic semiconductor component, the upper side, as seen in plan view, is at most partially covered by the shading structure. Preferably, other sides of the semiconductor body, in particular side surfaces and / or facets, are also free of the shading structure. This means that the shading structure does not form a housing or encapsulation or the like for the semiconductor body and / or the optoelectronic semiconductor component. In particular, the shading structure is also not part of a housing or encapsulation.

[0035] According to at least one embodiment of the optoelectronic semiconductor component, the shading structure comprises an absorption element that is arranged within the trench. If the shading structure comprises a plurality of absorption elements, the absorption element is in particular a first absorption element. The absorption element is designed to absorb radiation that propagates within the trench. The absorption element preferably has an absorption factor of at least 75% or at least 80% or at least 90% for this radiation. The absorption element can be formed from a suitable material, which are mentioned above in connection with the shading element. Advantageously, such an absorption element can be used to shade portions of the scattered radiation that propagate during operation in the direction of the semiconductor body and / or, for example, in the direction of a substrate of the semiconductor body.

[0036] According to at least one embodiment, the absorption element at least partially covers a bottom region of the trench. In particular, the absorption element completely covers the bottom region. Preferably, the trench extends into the second semiconductor layer. In particular, flanks of the trench are partially covered by the absorption element. Flanks of the trench, in particular, connect the bottom region of the trench to the top side. Starting from the bottom region of the trench, the absorption element extends, for example, at most as far as the active zone.

[0037] According to at least one embodiment, the trench is at least partially filled with a filler material. In particular, the filler material is permeable to the radiation propagating within the trench during normal operation. This means, in particular, that the transmittance of the filler material is, for example, at least 70%, at least 80%, or at least 90%. The filler material is, for example, silicon dioxide.

[0038] Alternatively, the transmittance can be at most 50%, at most 40%, or at most 30%. Such a filler material can reduce the intensity of radiation coupled into the second segment during operation. If the second segment acts as an amplifier, a particularly wide dynamic range of the optoelectronic semiconductor component can be advantageously achieved.

[0039] The trench is preferably completely filled with the filling material. Filling the trench with the filling material makes it easier, in particular, to apply shading elements. It is possible for shading elements, such as the first or second shading element, to be arranged on the filling material, in particular directly thereon. It is also possible for a shading element to be arranged substantially exclusively on the filling material. In this case, the upper side in the region of the first and / or the second segment can be free of the shading element. In a plan view of the upper side, only the trench is then partially or completely covered by this shading element.

[0040] According to at least one embodiment, a distance of the shading structure to an upper edge of the trench is at most 50 pm. The distance is, for example, at most 30 pm or at most 10 pm. The distance can be an average distance between the upper edge and the shading structure in the lateral direction. The upper edge is defined, for example, by a line at which the flanks of the trench and the upper side meet. The upper edge can be seen, for example, in a plan view of the upper side as the contour of the trench. The lateral direction runs, for example, parallel to the main radiation direction. The shading structure or at least one shading element is preferably arranged directly on the upper edge. In particular, the distance between all shading elements and / or absorption elements of the shading structure is in each case at most 50 pm or at most 30 pm or at most 10 pm.

[0041] According to at least one embodiment of the optoelectronic semiconductor component, it comprises a first contact structure with a first metallization and a second metallization, as well as a second contact structure. The second contact structure is arranged, for example, directly on a side of the semiconductor body opposite the upper side. In particular, the second contact structure is in direct contact with the second semiconductor layer. For example, the second contact structure is configured to energize and / or drive the second semiconductor layer.

[0042] The first metallization is arranged, for example, directly on the upper side in the region of the first segment and the second metallization is arranged directly on the upper side in the region of the second segment. The first contact structure is designed to supply current to and / or drive the first semiconductor layer. The first metallization and the second metallization are preferably electrically separated from one another. In particular, the first segment and the second segment can be operated independently of one another using the first metallization and the second metallization. The first and the second contact structure each comprise, for example, one or more of the following metals: gold, titanium, AuGe, Ni, ITO, palladium, aluminum, silver, copper, platinum. According to at least one embodiment, the shading structure comprises a shading element which is arranged directly on the second metallization.If the shading structure already has one or more shading elements, the shading element of this embodiment is, for example, a second or a third shading element. The shading element has, for example, the same materials as the metallization. It is possible for the shading element and the second metallization to be formed in one piece. Alternatively, the shading element has the same materials and / or composition as one of the above shading elements. It is possible for the shading element to also be arranged on the first metallization, for example directly on the first metallization. In this case, the shading element is designed to be electrically insulating.

[0043] According to at least one embodiment, the second metallization has an overlap region which partially covers the trench in a plan view of the upper side. The overlap region is part of the shading structure. The overlap region is in particular part of the second metallization and is preferably formed integrally therewith. In this embodiment, the trench is preferably filled with the filler material. This makes it particularly easy to pull the second metallization over the trench in the overlap region. For example, the overlap region reaches up to the first metallization and / or the first segment in a plan view without coming into mechanical and / or electrical contact with it. According to at least one embodiment of the optoelectronic component, it comprises a carrier with a first contact point and a second contact point.The first contact point is, for example, electrically conductively connected to the first metallization and the second contact point is electrically conductively connected to the second metallization, in particular directly connected. The carrier is, for example, a printed circuit board or a submount. The contact points are, for example, arranged on a main side of the carrier facing the semiconductor body. The carrier advantageously enables independent control of the first and second metallization and thus of the first and second segments. Furthermore, the carrier can advantageously increase the mechanical stability of the optoelectronic semiconductor component.

[0044] According to at least one embodiment, the shading structure has an absorption element that is arranged between the first contact point and the second contact point of the carrier. If the shading structure already comprises an absorption element, the absorption element in this embodiment is in particular a second absorption element. The absorption element can advantageously be used to absorb scattered radiation that propagates from the trench in the direction of the carrier. This can prevent reflection of this scattered radiation from the carrier. The absorption element can have the same physical properties and the same materials as the absorption element described above.

[0045] According to at least one embodiment, the optoelectronic semiconductor component is an edge emitter. In particular, the semiconductor body comprises a waveguide on its upper side. The shading structure comprises at least one lateral shading element, which, in a plan view of the upper side, is arranged next to the waveguide. The waveguide defines, for example, a resonator axis for a laser resonator of the edge emitter.

[0046] The waveguide can, in particular, be a ridge waveguide. These are also known in English as "ridges." The waveguide is, for example, part of the first semiconductor layer. For example, in the case of a ridge waveguide, the waveguide protrudes from the first semiconductor layer.

[0047] It is possible for the trench to extend through the active zone or to where the optical wave is guided. Furthermore, it is possible for the trench to completely penetrate the waveguide. This means, in particular, that the waveguide is completely removed in the region of the trench. In the case of the semiconductor component as an edge emitter, in particular a main radiation surface is formed by a facet which runs perpendicular to the top side. This facet is, for example, parallel to a main extension direction of the trench. In the case of a ridge waveguide, the top side has a step when viewed from the main radiation surface of the optoelectronic component.

[0048] In a plan view of the upper side, the at least one lateral shading element is arranged in particular next to the trench. The lateral shading element can comprise one or more layers, which can be formed from one of the above-mentioned materials of the above shading elements. The lateral shading element is arranged in particular on, for example directly on, the upper side. Alternatively or additionally, the lateral shading element comprises at least one recess, which is filled, for example, with an absorbent material. The absorbent material can be a material of the absorption element.

[0049] According to at least one embodiment of the optoelectronic semiconductor component, the first segment is a laser element, and the second segment is an optical modulator or a detection element. The first segment preferably comprises at least one laser resonator, in which laser radiation is generated during intended operation. Preferably, this laser radiation is coupled from the first segment into the trench during operation. At least a portion of this radiation is coupled into the second segment, where it is optically modulated, for example.

[0050] According to at least one embodiment, the optoelectronic component comprises a first facet and a second facet. The first facet has a reflectance of at least 50%, in particular at least 80%, preferably at least 95%. A first section of the active zone is delimited by the first facet and a first flank of the trench in the main emission direction. The first section is in particular assigned to the first segment. The second facet has a reflectance of at most 50%, in particular at most 20%, preferably at most 5%. A second section of the active zone, which is in particular assigned to the second segment, is delimited in the emission direction by the second facet and a second flank of the trench. The reflectance indicates in particular which proportion of an incident intensity is reflected at the corresponding facet or flank.

[0051] A reflection factor of the reflection structure formed with at least one trench is between 10% and 90% inclusive, in particular 99% inclusive.

[0052] The first section preferably forms a laser oscillator. At the first flank of the trench, in particular laser radiation is coupled into the trench during intended operation. For example, at the second flank of the trench, during intended operation, at least a portion of this laser radiation is coupled into the second section. In particular, the first flank lies opposite the second flank. Finally, at a main emission surface of the semiconductor body opposite the trench in the region of the second segment, the radiation is coupled out of the semiconductor component during intended operation. The second section forms in particular an amplifier for the laser radiation. In particular, no laser resonator is formed in the second section due to the selected reflectance of the second facet. Due to the amplification, it is possible to realize a semiconductor component with a high dynamic range.

[0053] Further advantages and advantageous embodiments and developments of the optoelectronic semiconductor component emerge from the exemplary embodiments presented below in conjunction with schematic drawings. Identical, similar, and similarly acting elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements shown in the figures are not generally to scale. Rather, individual elements may be shown exaggeratedly large for clarity and / or clarity.

[0054] It shows :

[0055] Figure 1 is a schematic sectional view of a modification of an optoelectronic semiconductor component,

[0056] Figures 2 to 9 are schematic sectional views of various embodiments of an optoelectronic semiconductor component described here, and

[0057] Figure 10 is a schematic plan view of an embodiment of an optoelectronic semiconductor component described here.

[0058] The modification 100 of the optoelectronic semiconductor component according to Figure 1 has a semiconductor body 2. The semiconductor body 2 comprises a first semiconductor layer 21, a second semiconductor layer 22 and an active zone 23 which is arranged between the first and the second semiconductor layer 21, 22. The first semiconductor layer 21 is, for example, p-doped and the second semiconductor layer 22 is, for example, n-doped or vice versa. The semiconductor body 2 is formed with a III / V compound semiconductor material, in particular with GaN. The semiconductor body 2 is, for example, formed in one piece and produced in a single growth process.

[0059] A trench 6 completely penetrates the first semiconductor layer 21 and the active zone 23, starting from a top side 26 of the semiconductor body 2. The trench 6 divides the semiconductor body 2 into a first segment 3 and a second segment 4. The segments 3, 4 are electrically and / or optically separated from one another.

[0060] The modification 100 further comprises a second contact structure 30 and a first contact structure 31, 32. The second contact structure 30 is configured to supply current to the second semiconductor layer 22 during normal operation. For this purpose, the second contact structure 30 is arranged on a side of the semiconductor body 2 opposite the top side 26 and is in direct contact with the second semiconductor layer 22.

[0061] The first contact structure 31, 32 is designed to supply current to the first semiconductor layer 21 during normal operation. The first contact structure 31, 32 comprises a first metallization 31 and a second metallization 32. The first metallization 31 is arranged in direct contact with the top side 26 in the region of the first segment 3. The second metallization 32 is arranged in direct contact with the top side in the region of the second segment 4. The segments 3, 4 can be operated independently of one another via the first metallization 31 and the second metallization 32. The second contact structure 30 and the first contact structure 31, 32 each comprise one or more metals, such as gold, titanium, AuGe, Ni, ITO, palladium, aluminum, silver, copper, platinum.

[0062] The active zone 23 comprises a first section 24 and a second section 25. The first section 24 is assigned to the first segment 3 and the second section 25 is assigned to the second segment 4. The first section 24 is delimited in the direction of a main emission direction 9 by a first facet 28 and a first flank 61 of the trench 6. The active zone 23 is configured in the first section 24 to generate laser radiation in the visible spectral range. For this purpose, a laser resonator is formed in the first section 24.

[0063] The first facet 28 has a high degree of reflection, for example, over 90%, preferably over 95%. The first flank 61 has a degree of reflection between 10% and 90%, for example, 50%. The first flank 61 serves as an output surface for laser radiation generated in the first section 24. During normal operation, this radiation 7 propagates in the trench 6.

[0064] The second segment 4 forms an optical amplifier for radiation which, during operation, is coupled into the second section 25 via a second flank 62. The second flank 62 lies opposite the first flank 61 of the trench 6. The second section 25 is delimited in the emission direction 9 by the second flank 62 of the trench 6 and a second facet 29. A reflectance of the second flank 62 is, for example, between 10% and 90% inclusive, and a reflectance of the second facet 29 is, for example, at most 5% or at most 10%. In particular, no laser resonator is formed in the second segment 4. In particular, an at least partial population inversion is brought about in the second section 25 during operation, without a laser threshold being exceeded.

[0065] The second facet 29 forms a main radiation surface of the modification 100. The modification 100 is an edge emitter whose main radiation direction 9 is perpendicular to the second facet 29. By designing the second segment 4 as an amplifier, the dynamic range of the modification 100 can be increased.

[0066] During operation, radiation 7 propagates within the trench 6. This radiation 7 is not fully coupled into the second segment 4, but can leave the trench 6 as scattered radiation 71. For example, a portion of the scattered radiation exits in the direction of the top side 26 and in the direction of the main emission direction 9, as illustrated by the arrows in Figure 1. It is also possible for the scattered radiation 71 to additionally penetrate into the semiconductor body 2.

[0067] Radiation emitted by the semiconductor component in the main emission direction 9 can overlap with the scattered radiation 71 during operation. This reduces the beam quality and the image quality of the modification 100. Unwanted interference signals caused by the scattered radiation 71 are particularly problematic in applications requiring a high dynamic range.

[0068] Figure 2 shows an exemplary embodiment of an optoelectronic semiconductor component 1 described here, in which these disadvantages are at least partially overcome. In contrast to the modification 100 of Figure 1, the optoelectronic semiconductor component 1 comprises a filling material 60 with which the trench 6 is completely filled. Furthermore, the metallization 32 has a greater extent, so that it extends over the trench 6 in an overlap region 53. In a plan view of the top side 26, the trench 6 is thus at least partially covered by the overlap region 53. The filling material 60 is preferably permeable to the radiation 7 that propagates within the trench during operation. The filling material 60 is formed, for example, with or from silicon dioxide. Due to the filling material 60, the second metallization 32 can be drawn over the trench 6 particularly easily.Scattered radiation 71 propagating in the direction of the upper side 26 and the main radiation direction 9 is shaded or at least partially absorbed by the overlap region 53. The overlap region 53 is thus part of a shading structure 5. Advantageously, a portion of the scattered radiation 71 can thus be suppressed. In particular, those portions of the scattered radiation 71 that would propagate in the direction of the main radiation direction 9 are suppressed.

[0069] Figure 3 shows an optoelectronic semiconductor component 1 according to a second exemplary embodiment. The semiconductor component 1 has essentially the same features as the semiconductor component of Figure 2, with the difference that the shading structure 5 is not formed with an overlap region 53 of the second metallization 32, but comprises a shading element 51. Furthermore, the trench 6 is free of filler material. The shading element 51 is arranged on the top side 26. The shading element 51 is arranged in direct contact with the second metallization 32. The shading element 51 forms a shading structure 5 for scattered radiation 71. The shading element 51 is designed to be opaque to radiation 7 which propagates within the trench 6 during operation, and in particular to scattered radiation 71.This means that a transmittance of the shading element 51 is, for example, at most 10% for this radiation 7. The shading element 51 is, for example, structured as a layer, formed with a dielectric, and has an absorption coefficient for the scattered radiation 71 of, for example, more than 70%. The shading element 51 is formed, for example, with silicon nitride, an inorganic coating, or a photoresist. In a plan view of the top side 26, the shading element 51 partially covers the second segment 4.

[0070] Portions of the scattered radiation 71 that propagate in the direction of the main radiation direction 9 can be suppressed with this shading element 51, as illustrated in connection with the arrows 71 in Figure 3. This allows interference signals in the application due to the scattered radiation 71 to be reduced and the beam quality of the optoelectronic semiconductor component 1 to be increased.

[0071] The embodiment of the optoelectronic semiconductor component 1 according to Figure 4 differs from the embodiment of Figure 3 in that, in a plan view of the top side 26, the shading element 51 partially covers the first segment 3, the second segment 4, and the trench 6. It is also possible for the shading element 51 to completely cover the trench 6.

[0072] The shading element 51 is arranged in direct contact with the first metallization 31 and the second metallization 32. The shading element 51 is preferably electrically insulating. With a shading element 51 arranged in this way, scattered radiation 71 can be effectively shaded. This allows not only portions of the scattered radiation 71 that propagate in the direction of the main radiation direction 9 to be suppressed, but also portions of the scattered radiation 71 that leave the trench 6 in a different direction, as illustrated by the arrows in Figure 4.

[0073] The embodiment of Figure 5 differs from the embodiment of Figure 3 in that the trench 6 is filled with the filling material 60. Furthermore, the shading element 51 is arranged directly on the upper side 26. The shading element 51 is therefore in direct contact with the first semiconductor layer 21. The shading element 51 is arranged directly on an upper edge of the trench 6. The upper edge of the trench is defined by a line at which the upper side 26 meets the flanks 61, 62 of the trench 6. A particularly close arrangement of the shading element 51 or the shading structure 5 to the upper edge of the trench 6 allows the scattered radiation 71 to be shaded particularly effectively.

[0074] The embodiment of the optoelectronic semiconductor component 1 of Figure 6 differs from the embodiment of Figure 4 only in that the trench 6 is filled with the filling material 60.

[0075] In the embodiment of the optoelectronic semiconductor component 1 according to Figure 7, in contrast to the embodiment of Figure 3, an absorption element 52 is additionally arranged within the trench 6. The absorption element 52 and the shading element 51 together form the shading structure 5. In contrast to Figure 5, it is also possible for the shading structure 5 to have exclusively an absorption element 52. It is likewise possible for the shading structures 5 of all other embodiments to also have an absorption element 52.

[0076] The absorption element 52 is preferably formed with a dielectric and has an absorption factor of at least 80% or at least 90% for the scattered radiation 71. The absorption element 52 completely covers a bottom region of the trench 6 and partially covers flanks 61, 62 of the trench 6. Measured from the bottom of the trench 6, the absorption element 52 preferably does not reach as far as the active zone 23. Scattered radiation 71, which would propagate in the direction of the semiconductor body 2, can be shaded by the absorption element 52. A particularly large proportion of scattered radiation 71 can therefore be suppressed with a shading structure 5. The scattered radiation 71 also includes, for example, unwanted and / or unused laser radiation which does couple into the subsequent segment, but which couples in too deeply and would therefore not reach the active zone, but rather into non-leading layers.

[0077] The embodiment of Figure 8 differs from the embodiment of Figure 7 only in that the shading element 51 partially covers the first segment 3, the second segment 4 and at least partially covers the trench 6 in a plan view of the upper side 26, as is explained, for example, in connection with Figure 4.

[0078] Figure 9 shows a further exemplary embodiment of an optoelectronic semiconductor component 1 described here. The semiconductor component 1 of Figure 9 has, in particular, all the features of the semiconductor component of Figure 3, with the difference that there is no shading element 51. Furthermore, the semiconductor body 2 is mounted on a carrier 11. The carrier 11 has, on a main side facing the semiconductor body 2, a first contact point 12 and a second contact point 13. The first contact point 12 and the first metallization 31 are electrically conductively connected to one another. The second contact point 13 and the second metallization 32 are electrically conductively connected to one another. The carrier 11 is, for example, a printed circuit board with which the segments 3, 4 of the semiconductor body 2 can be controlled independently of one another via the contact points 12, 13.

[0079] A shading structure 5 is arranged on the upper side 26 between the first contact point 12 and the second contact point 13. The shading structure 5 comprises an absorption element 52. The absorption element 52 can be used to absorb and suppress scattered radiation 71, which would emerge from the trench 6 in the direction of the carrier 11 during normal operation. This makes it possible to reduce reflections of the scattered radiation 71 on the carrier 11, thereby increasing the beam quality of the optoelectronic semiconductor component 1.

[0080] Figure 10 shows a plan view of a top side 26 of an optoelectronic semiconductor component 1 according to a further exemplary embodiment. The optoelectronic component 1 has a waveguide 20. The waveguide 20 extends from a first facet 28 to a second facet 29, which forms a main emission surface of the optoelectronic semiconductor component 1. The first facet 28 and the second facet 29 each run perpendicular to the top side 26. The waveguide 20 is interrupted by a trench 6. This means that the waveguide 20 is completely severed in the region of the trench 6. In particular, a first section of the waveguide 20 runs from the first facet 28 to a first flank 61 of the trench 6 and a second section runs from a second flank 62 of the trench 6 to the second facet 29.The first section is assigned to a first segment 3 and the second section to a second segment 4 of the semiconductor body 2. The waveguide 20 defines a resonator axis for a laser resonator, at least in the region of the first segment 3.

[0081] Lateral shading elements 54 are arranged to the side of the waveguide 20 and next to the trench 6. The two lateral shading elements 54 form a shading structure 5. The lateral shading elements 54 are each designed, for example, as recesses into which an absorption material is introduced.

[0082] For example, the absorption material is the same material with which the absorption element 52 is formed.

[0083] Alternatively, at least one of the lateral shading elements is designed in the form of an additional layer. For example, the additional layer is formed like a shading element 51 according to one of the other embodiments, in particular using the same material.

[0084] It is possible that all other

[0085] From exemplary embodiments, a waveguide is formed according to Figure 10. For example, sectional planes of the sectional views of Figures 2 to 9 can run perpendicular to the top side 26 through a waveguide.

[0086] Lateral shading elements 54 can also be provided in all other embodiments. Likewise, the shading structure 5 of Figure 10 can comprise further shading elements 51 and / or absorption elements 52 according to one of the other embodiments. Such lateral shading elements 54 can be used to shade portions of the scattered radiation 71 that leave the trench 6 in lateral directions, as illustrated by the arrows 71 in Figure 10.

[0087] The invention is not limited to the embodiments described in the accompanying description. Rather, the invention encompasses every novel feature and combination of features, including, in particular, every combination of features in the claims, even if this feature or combination itself is not explicitly stated in the claims or embodiments.

[0088] This patent application claims priority from German patent application 102022117503 . 0 , the disclosure of which is hereby incorporated by reference .

[0089] Reference symbol list

[0090] 1 optoelectronic semiconductor component

[0091] 2 semiconductor bodies

[0092] 3 first segment

[0093] 4 second segment

[0094] 5 Shading structure

[0095] 6 trench

[0096] 7 Radiation within the trench

[0097] 9 Main radiation direction

[0098] 11 carriers

[0099] 12 first contact point

[0100] 13 second contact point

[0101] 20 waveguides

[0102] 21 first semiconductor layer

[0103] 22 second semiconductor layer

[0104] 23 active zone

[0105] 24 first section of the first semiconductor layer

[0106] 25 second section of the first semiconductor layer

[0107] 26 Top

[0108] 28 first facet

[0109] 29 second facet

[0110] 30 second contact structure

[0111] 31 first metallization

[0112] 32 second metallization

[0113] 51 Shading element

[0114] 52 Absorption element

[0115] 53 Coverage area

[0116] 54 side shading element

[0117] 60 filling material

[0118] 71 Scattered radiation

[0119] 100 variations

Claims

Patent claims 1. Optoelectronic semiconductor component (1) comprising - a semiconductor body (2) with an active zone (23) and segments (3,4), and - a shading structure (5) , wherein - two adjacent segments (3, 4) by a trench (6) are separated, which penetrates the active zone (23) starting from a top side (26) of the semiconductor body (2), - the shading structure (5) comprises a shading element (51) on the upper side (26) and / or a absorption element (52) within the trench (6), and - the shading structure (5) is opaque and / or absorbent for radiation (7) generated in the active zone (23), and - the second absorption element (52) extends from a bottom region of the trench (6) at most as far as the active zone (23).

2. Optoelectronic semiconductor component (1) according to claim 1, the shading element (51) at least partially covers at least one second segment (4) in a plan view of the upper side (26).

3. Optoelectronic semiconductor component (1) according to claim 1 or 2, wherein in a plan view of the top side (26) the shading element (51) at least partially covers a first segment (3), the second segment (4) and the trench (6). Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the shading element is arranged directly on the upper side (26). Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the upper side (26), viewed in plan view, is at most partially covered by the Shading structure (5) is covered. Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the absorption element (52) forms a bottom region of the trench (6) at least partially covered. Optoelectronic semiconductor component (1) according to one of the preceding claims, in which the trench (6) is at least partially filled with a filling material (60). Optoelectronic semiconductor component (1) according to one of the preceding claims, in which a distance of the shading structure (5) to an upper edge of the trench (6) is at most 50 pm. Optoelectronic semiconductor component (1) according to one of the preceding claims, the shading element (51) is arranged directly on an upper edge of the trench (6). Optoelectronic semiconductor component (1) according to one of the preceding claims, further comprising a - first contact structure (31, 32) with a first metallization (31) and a second metallization (32) and - a second contact structure (30), wherein - the second contact structure (30) is arranged directly on a side of the semiconductor body (2) opposite the top side (26), - the first metallization (31) is arranged directly on the upper side (26) in the region of a first segment (3), and - the second metallization (32) is arranged directly on the top side (26) in the region of a second segment (4). Optoelectronic semiconductor component (1) according to claim 10, wherein the shading structure (5) comprises a shading element (51) arranged directly on the second metallization (32). Optoelectronic semiconductor component (1) according to claim 10 or 11, wherein the second metallization (32) in a plan view of the top side (26) at least partially covers the trench (6) in an overlap region (53), wherein the overlap region (53) is part of the shading structure (5). Optoelectronic semiconductor component (1) according to one of claims 10 to 12, further comprising a carrier (11) with a first contact point (12) and a second contact point (13), wherein the first contact point (12) is electrically conductively connected to the first metallization (31) and the second contact point (13) is electrically conductively connected to the second metallization (32). Optoelectronic semiconductor component (1) according to claim 13, wherein the shading structure (5) comprises an absorption element (52) arranged between the first contact point (12) and the second contact point (13). Optoelectronic semiconductor component (1) according to one of the preceding claims, wherein the semiconductor component (1) is an edge emitter, in which - the semiconductor body (2) comprises a waveguide (20) on the upper side, and - the shading structure (5) comprises at least one lateral shading element (54) which, in a plan view of the top side (26), is arranged next to the waveguide (20). Optoelectronic semiconductor component (1) according to one of the preceding claims, in which - a first segment (3) forms a laser element, and - a second segment (4) forms an optical modulator or a detection element. Optoelectronic semiconductor component (1) according to one of the preceding claims, further comprising a first facet (28) and a second facet (29), wherein - the first facet (28) has a reflection factor of at least 80%, - a first section (24) of the active zone (23) is delimited by the first facet (28) and a first flank (61) of the trench (6) in the main radiation direction (9), - the second facet (29) has a reflection factor of at most 20%, a second portion (25) of the active zone (23) of the second facet (29) and a second flank (62) of the trench (6) in the main radiation direction (9), and - a reflection factor of the flanks (61, 62) of the trench (6) is between 10% and 90% inclusive.