METHOD AND DEVICE FOR TREATING OBJECTS WITH A MEDIUM, IN PARTICULAR A LIQUID

Description

[0001] The invention relates to a method for treating objects with a medium, in particular a liquid, and further to a device with which the method according to the invention can be carried out.

[0002] When treating objects with a medium, particularly a liquid, the problem arises that the temperature, concentration, and / or quantity of liquid applied to the surface of the object to be treated must be adjusted depending on the prevailing conditions. It may be necessary to change the temperature, concentration, and / or quantity of liquid during the treatment of the object's surface in order to adapt them to differences in the structure and / or design of the object. This problem arises, for example, when etching semiconductor wafers and when cleaning etched semiconductor wafers.

[0003] The etching of semiconductor wafers with etching media (etching liquids) is usually carried out by applying an etching medium to the semiconductor wafer arranged on a holder and rotated by the holder.

[0004] The equipment currently used for etching semiconductor wafers is too slow in controlling the temperature of the etching liquid to quickly change or regulate the temperature during the process.

[0005] The sluggish (etching) devices used in the prior art only allow for a stable temperature of the etching fluid. Actively influencing temperature uniformity is not possible with the prior art. This results in an uneven temperature distribution on the semiconductor wafer, which impairs the uniformity of the etching result.

[0006] Furthermore, there is the problem that in the current state of the art, the etching medium applied to the surface of the object to be treated (semiconductor wafer) at the beginning of the etching process (switch-on process) is colder than is necessary for a proper processing process.

[0007] Only after some time are all medium-carrying parts in thermal equilibrium.

[0008] US 6,376,013 B1 discloses a method for treating objects with a medium, comprising the steps of: applying the medium to the surface of the object to be treated with the aid of an application device that is moved relative to the object to be treated over the surface of the object to be treated; regulating properties of the medium to be applied to the object to be treated as a function of the position of the application device relative to the surface of the object to be treated; and regulating the temperature of the medium to be applied to the object to be treated, wherein the temperature is detected with the aid of a temperature sensor assigned to the application device.US 6,376,013 B1 further discloses a device for treating objects, comprising a holder for the object to be treated, a device for applying the medium to the object to be treated, to which device a line for the medium leads, and an actuator for moving the application device relative to the object to be treated, wherein a sensor is provided for detecting at least one property of the medium and a control circuit which is functionally connected to a sensor, a device assigned to the line for the medium for controlling the quantity of medium flowing through the line in a unit of time, which device is functionally connected to the control circuit, and a sensor which is assigned to the application device at the point at which the medium exits it and which detects the temperature of the medium.

[0009] The invention is based on the object of proposing a method and a device suitable for carrying out the method, with which the temperature and / or the concentration and / or the amount of the liquid can be changed as desired during the treatment of an object (e.g. wafer) in order to compensate for differences in the structure of the object to be treated, in particular differences in uniformity, in the surface of a semiconductor wafer.

[0010] This object is achieved according to the invention with a method having the features of claim 1.

[0011] As far as the device is concerned, the problem underlying the invention is solved by a device which has the features of the independent claim directed to the device.

[0012] Preferred and advantageous embodiments of the invention are the subject of the subclaims.

[0013] The method according to the invention, in its embodiments, achieves an improvement in the uniformity of the treatment result of the object, in particular the uniformity across the surface of the semiconductor wafer, because it is possible to adjust the temperature and / or the amount of treatment medium applied to the object. This results in a reduction in rejects, as an increase in quality is achieved.

[0014] Furthermore, the invention advantageously allows smaller structures to be treated.

[0015] Furthermore, the method according to the invention eliminates the need for constant heating of the medium, in particular the liquid, to the required temperature, so that energy can be saved.

[0016] In one embodiment of the invention, inductive heating of the medium (liquid) used to treat the object opens up the possibility of using small heating elements, thus reducing the masses to be heated. Induction heating achieves heating only at the material surface, allowing heat to be transferred by convection. This results in a rapid response to changes in the temperature of the medium required during the process.

[0017] Since the medium (liquid) used for treatment may need to be cooled, a cooler can be used, for example, one that operates with Peltier elements. These Peltier elements can be used for both heating and cooling, thus improving the dynamics of the method and device according to the invention.

[0018] Furthermore, in embodiments, the invention allows the amount of medium (liquid) supplied to the application device, in particular its nozzle, per unit of time to be regulated by means of a flow controller, i.e., the flow rate of the medium to be changed. This makes it possible to heat the medium over a longer period of time at a low flow rate and to heat the medium over a shorter period of time at a high flow rate. By coupling these principles with the spatial position of the application device, in particular its nozzle, relative to the object to be treated, an advantageous method of working is achieved when treating objects with a medium (liquid), in particular when etching and / or cleaning semiconductor wafers.

[0019] In particular, the invention allows, in embodiments, temperature manipulation of a medium (liquid) applied to the surface of the object, whereby the medium can be heated or cooled.

[0020] By regulating the flow rate of the medium (liquid) applied to the surface to be treated, especially in semiconductor etching systems, an additional manipulation is possible in order to adapt the process conditions to the circumstances.

[0021] Within the scope of the invention, the heating of the medium (liquid) used for the treatment preferably takes place by convective heat transfer of an induction-heated, preferably chemically inert, surface around which the medium (liquid for the treatment) flows. In particular, the use of a heating device in the form of a flow heater is preferred, since the transfer occurs predominantly by convection rather than by heat conduction or heat radiation. This results in a particularly effective heat transfer, which allows for rapid heating of the medium (liquid) used for the treatment.

[0022] In the method according to the invention, heating, cooling and regulation of the flow rate are carried out by means of devices which are associated with the line for supplying the treatment medium to the application device, in particular its nozzle.

[0023] Further details and features of the invention will become apparent from the following description of preferred embodiments with reference to the drawings. Fig. 1 schematically shows a device for carrying out the method of the invention, Fig. 2 in section a temperature sensor which can be used to detect the temperature in the area of ​​the application device, Fig. 3 the temperature sensor in an exploded view, Fig. 4 in section another embodiment of a temperature sensor, Fig. 5 schematically shows in section a device for heating the liquid, Fig. 6 a detail of the device of Fig. 5 , Fig. 7a further detail of the device of Fig. 5 , Fig. 8the establishment of Fig. 5 in oblique view, partially in section, Fig. 9 in section a device for cooling, Fig. 10 a device for regulating the flow rate and Fig. 11 an arrangement for manipulating the flow rate, Fig. 12 a modified embodiment of a device according to the invention and Fig. 13 combinations of devices of the device according to the invention.

[0024] One in Fig. 1 The device 1 shown according to the invention, which is suitable for carrying out the method of the invention, comprises a carrier 19 ("chuck") on which a semiconductor wafer 8 is placed. The carrier 19 can be designed in any desired manner and can be coupled to a drive (not shown) that causes the carrier 19 to rotate (arrow 20).

[0025] The carrier 19 is assigned a device for applying a treatment medium, in the example a treatment liquid, which comprises a nozzle 11 that is rigidly connected to actuators 12 via a device 13. The actuators 12 allow the nozzle 11 of the application device to be moved via the device 13 relative to the surface of the object to be treated, in the exemplary embodiment a semiconductor wafer 8. The movement options in the X direction and the Y direction are shown in Fig. 1 symbolized by arrows 5 and 6.

[0026] Treatment fluid, an etching medium when etching semiconductor wafers, is supplied to the nozzle 11 via a line 17. Associated with the line 17 are a device 4 for flow rate regulation, a cooling device 3, and a device 2 for heating the fluid.

[0027] The current position of the nozzle 11 and thus the location 7 of the liquid application are detected by incremental encoders 14 assigned to the actuators 12. The incremental encoders 14 transmit data concerning the current position of the application nozzle 11 relative to the surface of the wafer 8 to a control loop 10.

[0028] A temperature sensor 9 is assigned to the line 17 for supplying treatment fluid directly upstream of the nozzle 11. This sensor transmits data concerning the fluid temperature it detects to the control circuit 10. The temperature parameters 16 transmitted to the control circuit 10 by the temperature sensor 9 and the position parameters 15 transmitted by the incremental encoders 14 are transmitted by the control circuit 10 as a control algorithm to the flow rate control devices 4, the cooling device 3, and the heating device 2 assigned to the line 17.

[0029] In this way, highly dynamic position-coupled temperature control and flow control is possible, which includes the advantage of thermal optimization of all medium-carrying parts.

[0030] The Fig. 1 The device 1 shown for temperature and / or flow manipulation of liquid supplied from the nozzle 11 operates depending on the position of the nozzle 11 of the application device relative to the object to be treated, in the example the semiconductor wafer 8. In this way, an improvement in the surface regularity is achieved during cleaning and during wet-chemical and temperature-dependent etching, for example of wafer surfaces.

[0031] It is particularly advantageous if, within the scope of the invention, a device is used as the heating device 2 which operates on an induction basis and heats the liquid flowing through the device 2 by convection.

[0032] A temperature sensor 9 which is particularly suitable for use with the device according to the invention for carrying out the method according to the invention for detecting the temperature of the treatment liquid applied to the object is described below with reference to Fig. 2 and 3 explained.

[0033] The one in the Fig. 2 and 3The temperature sensor 9 shown allows for rapid detection of the temperature of media, wherein the media can be, in particular, chemically highly reactive gases, chemically highly reactive liquids, or chemically highly reactive flowing materials. The temperature sensor 9 is constructed such that the media flow entering its body 30 (arrow 31) is divided into two partial flows by a body 45 provided in the flow path. One partial flow flows through a substantially straight channel 33, and a second partial flow through an angled channel comprising two sections 34 and 35. The partial flow flowing through the channel sections 34 and 35 encounters a disk-shaped body 36 at an acute angle, for example, of 45°, and then flows out of the body 30 of the temperature sensor 9 through section 35 (arrow 32).

[0034] The division into the partial flows results in a reduction in pressure in the area of ​​the inlet to the temperature sensor 9.

[0035] The disc-shaped body 36 is pressed from the upper part 37 of the temperature sensor 9 by screws 38 and 39 via a seal 40 onto a sealing surface 41 of the body 30 of the temperature sensor 9, so that a hermetically sealed system is obtained.

[0036] The parts of the temperature sensor 9 that come into contact with the medium are preferably made of chemically resistant materials, for example the disk-shaped body 36 preferably being made of (polycrystalline) diamond, glassy carbon, sapphire or silicon carbide, optionally with CVD coating (chemical vapor deposition), the seal 40 preferably being made of perfluoro rubber (FFKM), and the body 30 of the temperature sensor 9 preferably being made of polytetrafluoroethylene (PTFE).

[0037] The temperature is detected in the temperature sensor 9 via a temperature sensor 42, which is, for example, a platinum thin-film measuring resistor. The temperature sensor 42 is preferably bonded to the disc-shaped body 36 using a thermally conductive adhesive 43 (two-component epoxy resin), so that good heat transfer is ensured. A line 46 leads from the temperature sensor 42, which transmits the data 16 detected by the temperature sensor 42 via the Fig. 1 shown line to control circuit 10.

[0038] Another embodiment of a temperature sensor 9 is shown in Fig. 4 shown and is described below.

[0039] In this embodiment of a temperature sensor 9, turbulent flows are forced by an obstacle 51 provided in the flow channel 11, which in the Fig. 6 shown embodiment of the temperature sensor 9 results in a rapid temperature exchange between disc 36 and medium. As in the Fig. 2 and 2a, the disc 36 is pressed by the upper part 37 of the temperature sensor with the interposition of a seal 40 onto the bearing surface 41 in the body 30 of the temperature sensor 9. The Fig. 6 The embodiment of a temperature sensor 9 shown, as well as the embodiment of Fig. 2 and 2a a rapid temperature exchange between the medium flowing through the temperature sensor 9 and the temperature sensor 42, as indicated by the arrow 53.

[0040] The temperature sensor 9 can also be configured to be multiple, retentive. For this purpose, several temperature sensors 42 are glued to the disk 36 of the temperature sensor 9, whose temperature signals are compared using a monitoring program (software algorithm) to identify any temperature deviations due to aging, whereby these temperature differences should not exceed a certain difference. Exceeding the minimum temperature difference is indicated by a monitoring system with a signal. A change in the temperature difference can be indicated visually or acoustically. If several temperature sensors 42 are arranged on the disk 36, a multi-pole cable 46 is used to transmit the data recorded by the temperature sensors 42.

[0041] An induction-based device 2 for heating liquid flowing through the line 17 to the nozzle 11 is described below with reference to Fig. 5 bis 8 described: The Fig. 5 bis 8 The device 2 shown for heating a liquid or gaseous flowing medium has a hollow cylindrical heating element 60, around which the medium flows on its inside and outside, flowing in (arrow 63) and out (arrow 64) via connections 61, 62. The heating element 60, which consists, for example, of glassy carbon, is heated by alternating magnetic fields, particularly on its outside ("skin effect"). The frequency of the magnetic field can range, for example, from 100 kHz to 1 MHz. The magnetic field is generated by a coil 65.

[0042] The coil 65 is separated from the heating element 60 and the flowing medium by a hose 66. Energy is thus transferred without contact, which represents a significant advantage over conventional heating elements, which require electrical contact and must therefore be sealed from the medium being treated. The interior 67 is hermetically separated from the reactor chamber 69 by an inner hose 68 and a sealing system comprising a body 70, seal 71, clamping ring 72, and pressed part 73. The pressed part 73 serves to accommodate measuring sensors 74 (PT 100, PT 1000) and safety sensors 75 (e.g., TCO Thermal Cut Off). The final magnetic energy in the axial center is minimal, preventing the sensors from being damaged by strong electromagnetic fields. This provides good access for better monitoring of the heating element. This is advantageous for safety-relevant operation.

[0043] Sensors 74 and 75 are preferably arranged centrally and embedded in heat-conducting material 76, with cables 77 extending from sensors 74 and 75. An expanded outer tube 20 is pressed onto body 70 by means of a screw connection 78 and forms a hermetically sealed area from the reactor chamber 69 to the outside.

[0044] The device 2 is mirror-symmetrical with respect to its center plane, thus the same applies to the outlet 62 as to the inlet 61. Outlet 62 and inlet 61 can also be provided with a screw-in fitting. In order to keep the heating element 60 at a uniform, concentric distance from the inner tube 68 and the outer tube 66, a spacer ring 79 ( Fig. 10 and 11 ). A particular advantage is the short distance, as this results in rapid heat transfer from the heating element 60 to the medium flowing through the device 2.

[0045] The inflowing medium is divided into an outer 80 and an inner flow area 81, so that the heating element 60 is completely flowed around.

[0046] The device 2 is designed so that all components are made of materials with low thermal inertia.

[0047] In Fig. 8 The device 2 is shown, wherein the coil 65, which preferably consists of a soft copper tube, is shown partially sectioned in an oblique view. Shown in Fig. 8 also the inlet 82 for a cooling liquid and the outlet 83 for a cooling liquid with which the coil 65 is cooled.

[0048] The described structure of the device 2 also offers the possibility of flushing away or blowing out corrosive gases (e.g. hydrogen fluoride) occurring in the interior, for example by diffusion, by means of nitrogen, which enters via a flushing inlet 84 and exits again through the flushing outlet 85.

[0049] A device 3 for cooling is described below with reference to Fig. 9 explains: The Fig. 9 The device 3 shown for cooling liquid media has two plates 90 arranged one above the other and aligned parallel to each other. The space between the plates 90 is sealed by an edge seal 91, which seal 91 keeps the plates 90 spaced apart. The spacing of the plates 2 from one another is advantageously selected to enable good heat transfer to the medium to be cooled, which is supported by achieving turbulent flow. The plates 90 can be made of sapphire, diamond, glassy carbon, or silicon carbide, optionally with a silicon carbide layer (SiC) deposited thereon.

[0050] Plates 2 and 3 are held between an upper part 92 and a lower part 93 of device 3, which are held together by screws 94. A pipe section 95 is screwed into an opening in the upper plate 92 and is aligned with a hole 96 in the upper plate 90. It is sealed from plate 90 by an annular seal (e.g., an O-ring). Pipe section 95 serves as an inlet for the medium to be cooled (arrow 97). A pipe section 95 is also screwed into the lower plate 2. This pipe section communicates with an opening 96 in the lower plate and is sealed from plate 90 by an annular seal (e.g., an O-ring). The medium, after flowing through the space between plates 90, can exit device 3 through pipe section 95 (arrow 98).Peltier elements 100 are arranged on both sides of the plates so that heat extracted from the medium is transferred via the Peltier elements to a heat sink 101 located on the top and bottom. The cooling elements 101 each have an inlet 102 and an outlet 103, allowing a cooling medium to flow through them.

[0051] In Fig. 9 It is also indicated that the Peltier elements are brought into good thermal conduction connection with the heat sinks 101 by means of thermally conductive adhesive 104.

[0052] The Fig. 9 The device shown can, after reversing the polarity of the Peltier elements 100, in principle also be used to heat a medium flowing through the device 3.

[0053] A device 4 for flow rate control is described below with reference to Fig. 10 explained: The device 4 for regulating the flow of a medium comprises a diaphragm 110, which has a needle-shaped, tapered projection on one side, the distance of which from the valve seat 111, which is integrally connected to a body 112, can be varied by means of an adjusting device 113, 114. The adjusting device preferably comprises a stepper motor 113, the spindle 114 of which represents a drive for the diaphragm 110. The spindle 114 does not rotate and is only moved linearly by means of a rotating sleeve built into the motor 113. Medium is introduced into the inlet 115 and exits again via the outlet 116. The bodies 117 and 118 serve only to position the stepper motor 113 and to seal the diaphragm 110, for which purpose screw connections (not shown) are provided. A sensor 119 detects the distance of the diaphragm 110 or its clearance from the valve seat 111, which data is fed to the control system.

[0054] One in Fig. 11 The schematically illustrated embodiment of the flow manipulation device 4 determines the flow rate using a flow sensor 121 (for example, an ultrasonic flow sensor). The values ​​thus detected are fed via a signal line 112 to a controller 123, which, via a further control line 124, operates the actuator 113, 114 (stepper motor) of the flow controller 129, which in turn transmits its current position to the controller via a position control via a control line 125. The flow of the medium via inlet 127 and through outlet 128 can be specified externally via a main control line 126.

[0055] To allow rapid control of the medium temperature based on the position of the nozzle 11 relative to the wafer 8, it is necessary to create a previously known temporal and spatial temperature profile so that the required medium temperature can be maintained. For this purpose, a cooling device is advantageously used that compensates for local temperature differences, taking into account the current settings of the system and the medium to be treated to avoid any interference factors, heat sinks, etc.

[0056] The Fig. 12 The modified embodiment of a device 130 according to the invention shown in FIG. 1 is an extension of the device 1 according to Fig. 1 . The device 130 also comprises devices 134 for regulating the temperature and devices 4 for regulating the flow rate of the treatment medium (treatment liquid) applied to the wafer 8 through the nozzle 11.

[0057] In addition, the device 130 according to Fig. 12 Devices with which the concentration of the treatment medium (etching liquid) can be changed depending on the position of the nozzle 11 and thus the location 7 at which the treatment medium is applied to the wafer 8.

[0058] The device provided for this purpose comprises a sensor 133 that detects the concentration of the treatment medium. For example, the concentration sensor 133 is a common pH meter or a spectrometer with which the concentration of the treatment fluid used can be determined.

[0059] In detail, the device 130 operates as follows when adjusting the concentration depending on the nozzle 11: The components of the treatment medium are supplied via lines 137, and the defined concentration and temperature values ​​in medium sources 136 are transmitted via a control line 138 to the control / regulation unit 131. A software algorithm converts the temperature values ​​supplied via lines 138, the concentration values ​​supplied via line 140, and the temperature values ​​detected by the temperature sensor 9 into control signals. These control signals are transmitted via control lines 139 to the components 134 for regulating the temperature 134 and the device 4 for regulating the flow rate.The media streams are fed to a mixing device 132, which is designed in particular as a static mixer, and mixed with one another, wherein, when using a static mixer, rapid mixing can be achieved to achieve the desired temperature and / or concentration at the predetermined amount.

[0060] The Fig. 12 The points 135 drawn next to the flow rate controllers 4, the temperature controllers 134 and the media sources 136 indicate that more than two of these components can be provided.

[0061] In Fig. 13 Various combination options for heating devices 2 and cooling devices 3 are indicated. Further possibilities for combining the devices in Fig. 13In the variants shown, the devices 134 for adjusting the temperature by heating and cooling the medium are conceivable, whereby the variant without a device for regulating the temperature 134 is also indicated at 141. If this variant, which is indicated at 141, is implemented, the temperature can be adjusted analogously to the adjustment of the concentration via flow controllers, without separate devices for heating and cooling, if the temperatures in the media sources 136 of the medium streams 137 are sufficiently different.

Claims

1. Method for treating objects (8) with a medium, in particular a liquid, comprising the following steps of: - applying the medium to the surface to be treated of the object (8) placed on a holder (19) with the aid of an application device with a nozzle (11), to which the medium is supplied by a line (17) and which is rigidly connected to actuators (12) via a device (13) and is moved relative to the object (8) to be treated over the surface of the object (8) to be treated via the actuators (12), wherein the position of the nozzle (11) is detected by incremental encoders (14) which are assigned to the actuators (12), regulating properties of the medium to be applied to the object (8) to be treated depending on the position of the nozzle (11) relative to the surface of the object (8) to be treated, - regulating the temperature of the medium to be applied to the object (8) to be treated with the aid of the control circuit (10), wherein the temperature is detected with the aid of a temperature sensor (9) which is assigned to the line (17) immediately upstream of the nozzle (11) and supplies the control circuit (10) with data relating to the temperature of the medium detected by it, - feeding the position of the nozzle (11) detected by the incremental encoders (14) and the temperature of the medium detected by the temperature sensor (9) to a control circuit (10) and regulating the temperature of the medium and / or the quantity of medium fed to the nozzle (11) in the unit of time with the control circuit (10), for which purpose a device (4) for regulating the quantity of medium flowing through the line (17) in the unit of time and devices (2, 3) for heating and cooling the medium are assigned to the line (17) for the medium, which devices (2, 3, 4) are functionally connected to the control circuit (10).

2. Method according to claim 1, wherein the concentration of the medium to be applied to the object (8) to be treated is regulated.

3. Method according to claim 1 or 2, wherein a semiconductor wafer (8) is treated.

4. Method according to claim 3, wherein the semiconductor wafer (8) is etched.

5. Method according to claim 3, wherein the semiconductor wafer (8) is cleaned.

6. Method according to one of claims 1 to 5, wherein the object (8) to be treated is rotated (20) during the treatment.

7. Method according to one of claims 1 to 6, wherein the temperature of the medium is detected immediately before it is applied to the object (8) to be treated, in particular immediately before it emerges from the nozzle (11) of the application device.

8. Method according to one of claims 1 to 7, wherein the medium, in particular the liquid, is heated or cooled.

9. Method according to claim 8, wherein components of the medium to be applied to the object (8) to be treated, in particular the liquid, which have different temperatures from one another, are mixed to regulate the temperature.

10. Method according to one of claims 1 to 9, wherein components of the medium to be applied to the object (8) to be treated, in particular the liquid, which have different temperatures from one another, are mixed to regulate the concentration.

11. Method according to one of claims 1 to 10, wherein the control circuit (10) regulates the concentration of the medium.

12. Device for carrying out the method according to one of claims 1 to 11, having a holder (19) for the object (8) to be treated, having an application device with a nozzle (11) for applying the medium to the surface of the object (8) to be treated, to which nozzle (11) a line (17) for the medium leads and which is rigidly connected via a device (13) to actuators (12) for moving the nozzle (11) relative to the object (8) to be treated, wherein - at least one sensor is arranged to detect at least one property of the medium, - at least one incremental encoder (14), which is assigned to the actuators (12) for detecting the position of the nozzle (11), - a control circuit (10) is functionally connected to at least one sensor and to the incremental encoder (14), - a device (4) associated with the line (17) for the medium is arranged for regulating the quantity of medium flowing through the line (17) in the unit of time, which device (4) is functionally connected to the control circuit (10), - devices (2, 3) for heating and cooling the medium are assigned to the line (17) for the medium, which devices (2, 3) are functionally connected to the control circuit (10), - a temperature sensor (9) is arranged, which is assigned to the line (17) directly upstream of the nozzle (11) and detects the temperature of the medium and transmits it to the control circuit (10).

13. Device according to claim 12, wherein the holder (19) for the object (8) to be treated is a carrier of the type of a carrier (19) for semiconductor wafers (8) ("chuck"), to which a drive for rotating (20) the holder (19) is associated.

14. Device according to claim 12 or 13, wherein a sensor (133) is provided for detecting the concentration of the medium, in particular the liquid.

15. Device according to one of claims 12 to 14, wherein a mixing device (132) is provided for mixing partial streams of the medium, which partial streams have different temperatures and / or concentrations from each other.

16. Device according to one of claims 12 to 15, wherein the device (2) for heating the medium, in particular the liquid, is a device which heats the medium by convection and which operates on an induction basis.

17. Device according to one of claims 12 to 16, wherein the device (3) for cooling the medium comprises at least one Peltier element (100).

18. Device according to one of claims 12 to 17, wherein - a housing (30) in which a flow channel (33, 34, 35) is provided for the medium whose temperature is to be detected, - the flow channel (33) is divided into two partial channels (34, 35) in the region of a temperature sensor, which reunite after flowing past the temperature sensor (42), and - the temperature sensor (42) is arranged on a disk-shaped body (36) in the heat-conducting contact.

19. Device according to one of claims 12 to 18, wherein an obstacle (51) generating turbulence in the medium flowing through is provided in the flow channel of the temperature sensor, wherein the obstacle (51), with respect to the flow direction of the medium, is provided after the disk (36) on which the temperature sensor (42) is arranged.