Piezoelectric-on-insulator (POI) substrate and method for producing a piezoelectric-on-insulator (POI) substrate
Patent Information
- Application Number
- DE602023011887
- Authority / Receiving Office
- DE · DE
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-03-08
- Filing Date
- 2023-03-03
- Publication Date
- 2026-02-11
- Estimated Expiration
- 2043-03-03
AI Technical Summary
The significant difference in acoustic impedance between silicon-based substrate materials and silicon oxide dielectric layers in piezoelectric substrates leads to performance losses and parasitic modes in acoustic wave devices, such as sensors and filters.
A piezoelectric substrate on insulator (POI) design featuring a silicon oxynitride intermediate layer with a variable composition along its thickness, gradually matching the acoustic impedance between the dielectric layer and the support substrate, thereby reducing the impedance difference and minimizing parasitic effects.
The design enhances the stability and performance of acoustic wave devices by reducing acoustic impedance differences, leading to improved characteristics and reduced parasitic modes, thus enhancing the functionality of sensors and filters.