INTERCONNECTION FILM AND ELECTRONIC STRUCTURE COMPRISING SUCH A FILM

Abstract

INTERCONNECT FILM AND ELECTRONIC STRUCTURE COMPRISING SUCH A FILM One aspect of the invention relates to an interconnection film (40) comprising: a base layer (41) made of an insulating polymer material and comprising a first face (41a) and a second face (41b); a plurality of first patterns (42) projecting from the first face, formed from the insulating polymer material and configured so that the interconnection film constitutes a dry adhesive film; a metal element (43) made of solid metal comprising: a body (431) which extends through the base layer; and in the extension of the body, at least one second pattern (432) projecting from the first face, having a shape different from that of the first patterns and, in a plane parallel to the first face, a constant or decreasing section moving away from the first face. Figure to be published with the abstract: Figure 3

Description

Title of the invention: INTERCONNECT FILM AND ELECTRONIC STRUCTURE COMPRISING SUCH A FILM Technical field

[0001] The technical field of the invention is that of films for electrically and mechanically interconnecting two objects, for example an electronic component and a flexible substrate capable of deforming and adapting to a non-planar surface such as the skin. The present invention relates more particularly to an interconnection film comprising patterns configured to form a dry adhesive film. The present invention also relates to an electronic structure comprising a substrate, an electronic component and the interconnection film disposed between the substrate and the electronic component. STATE OF THE ART

[0002] Flexible electronic structures can integrate electronic components such as integrated circuits, sensors, actuators, batteries, passive components, radio frequency identification (RFID) chips and antennas. The manufacture of a flexible electronic structure comprises the transfer of one or more electronic components onto a flexible substrate, also called a flexible printed circuit. This substrate comprises a support film, for example made of polyester, polyimide, polytetrafluoroethylene or polyetheretherketone, and metal tracks arranged on the surface of the support film. Each electronic component comprises connection pads which open onto one face of the component, this face being commonly called the "active face".

[0003] A first interconnection technique (called “wire bonding” in English) consists of electrically connecting the connection pads of the component to the metal tracks of the substrate by wires, when the active face of the component is facing upwards.

[0004] When, on the contrary, the active face of the component is turned downwards (in other words when it is arranged opposite the substrate), the connection pads of the component can be connected to the metal tracks of the substrate by soldering, using a fusible material, a conductive glue or a conductive element pressed onto each interconnection pad. This second interconnection technique, electrical and mechanical, is commonly called "flip-chip", in reference to the inverted position of the component. Interconnection elements, such as fusible microbeads, an anisotropic conductive film or gold bosses (better known as stud bumps), can be placed between the component and the substrate.

[0005] As electronic components are often thick and rigid, bending stresses in the electronic structure place a high stress on the bonding, soldering or brazing interfaces, which eventually break.

[0006] To remedy this problem, it has been proposed to place the interfaces or interconnection elements as close as possible to the neutral plane of the electronic structure.

[0007] For example, document US2006 / 097373A1 describes an electronic structure comprising a flexible substrate and an electronic component bonded to the substrate by means of a layer of thermosetting resin, typically an epoxy resin. A conductive pillar electrically connects a connection pad arranged in the active face of the component and a metal track arranged on the flexible substrate. This conductive pillar extends through the layer of thermosetting resin. The electronic structure further comprises an insulating layer known as a passivation layer, the thickness of which is chosen to bring the neutral plane of the structure to the level of the active face of the component.

[0008] This arrangement makes it possible to limit the mechanical bending stresses at the electrical connection of the component (in other words when the electronic structure is bent). On the other hand, it is not entirely satisfactory when the electronic structure is subjected to tensile (stretching) or shear stresses.

[0009] [Fig.l] represents an electronic structure 1 described in patent application FR3126259A1. The electronic structure 1 comprises a substrate 10, an electronic component 20 and an interconnection film 30 arranged between the substrate 10 and the electronic component 20. The interconnection film 30 electrically and mechanically connects the electronic component 20 to the substrate 10. This electronic structure 1 is designed to have a long service life, thanks in particular to better resistance to tensile (stretching) and / or shear stresses.

[0010] The interconnection film 30 comprises a first face 30a, a second face 30b opposite the first face, an electrically conductive area 31 extending from the first face 30a to the second face 30b and an electrically insulating polymer material 32 coating the electrically conductive area 31. At least one of the first and second faces 30a-30b of the interconnection film 30 is structured so as to form a dry adhesive film, having a plurality of protruding patterns 33. The patterns 33 are for example mushroom-shaped. A part of the patterns 33 are formed from the polymer material 32 and the other part of the patterns 33 belong to the electrically conductive area 31.

[0011] The electrically conductive zone 31 comprises an electrically conductive material, preferably chosen from carbon nanowires, carbon nanotubes, carbon black, metal particles or graphene. This material electrically conductive can be used alone or in admixture with a polymer material, identical or different from the polymer material forming the base of the interconnection film.

[0012] The method for manufacturing the interconnection film 30 comprises the formation of a mold comprising cavities, for example in the shape of mushrooms, the deposition of a conductive material (for example carbon nanotubes) in a region of the mold to form the electrically conductive zone 31, the coating of the electrically conductive zone 31 with the polymer material 32 and the demolding of the interconnection film 30 thus obtained. Summary of the invention

[0013] The invention aims to improve the performance of the interconnection film of the prior art without making its manufacture more difficult.

[0014] According to a first aspect of the invention, this objective is achieved by providing an interconnection film comprising: • a base layer formed from an electrically insulating polymer material and comprising a first face and a second face opposite the first face; • a plurality of first patterns projecting from the first face, the first patterns being formed from the electrically insulating polymer material and configured so that the interconnection film constitutes a dry adhesive film; • a metallic element comprising: • a body that extends through the base layer, from the first face to the second face; and • in the extension of the body, at least one second pattern projecting from the first face.

[0015] The interconnection film is remarkable in that the metallic element is made of solid metal and in that said at least one second pattern of the metallic element has a shape different from that of the first patterns and, in a plane parallel to the first face, a constant or decreasing section moving away from the first face.

[0016] Thus, the metal element has higher electrical conductivity and rigidity than the electrically conductive area of ​​the interconnection film according to the prior art. The shape of the second pattern of the metal element, different from that of the first patterns, makes it possible to continue to use a mold to manufacture the interconnection film. Indeed, the second pattern of the metal element does not risk breaking during demolding and remaining trapped in the mold. The interconnection film can therefore be manufactured easily and in large volumes.

[0017] Preferably, each first pattern comprises a pillar that extends from the first face of the base layer and a cap located at one end of the pillar, the cap having, in a plane parallel to the first face, dimensions greater than those of the pillar.

[0018] Advantageously, the metallic element further comprises, in the extension of the body, a head which rests on the second face of the base layer.

[0019] Said at least one second pattern of the metallic element may have a height greater than or equal to that of the first patterns.

[0020] A second aspect of the invention relates to an electronic structure comprising: • a substrate; • an electronic component; • an interconnection film according to the first aspect of the invention, arranged between the substrate and the electronic component so as to electrically and mechanically connect the electronic component to the substrate.

[0021] Preferably, the substrate comprises an electrically conductive pad, the electronic component comprises a connection pad and the metallic element of the interconnection film connects the electrically conductive pad to the connection pad.

[0022] In a preferred embodiment, the first face of the base layer is arranged facing the substrate, the first patterns are in contact with the substrate and the second face of the base layer is arranged facing the electronic component.

[0023] According to a development of this preferred embodiment, the second face of the base layer is separated from the electronic component by a layer of glue.

[0024] A third aspect of the invention relates to a method of manufacturing an interconnection film, comprising the following steps: • provide a mold comprising first cavities and a second cavity, the first cavities and the second cavity extending from an outer face of the mold, the second cavity having a different shape from that of the first cavities and, in a plane parallel to the outer face, a constant or decreasing section moving away from the outer face; • forming a metallic element in a region of the mold comprising the second cavity, the metallic element comprising a body arranged on the outer face of the mold and, in the extension of the body, a protruding pattern arranged inside the second cavity; • depositing an electrically insulating polymer material in the first cavities and on the outer face of the mold, so as to form a polymer film which coats the body of the metal element; and • demould the polymer film and the metal element.

[0025] Preferably, the step of forming the metallic element comprises the following sub-steps: • deposit a metallic germination layer in the second cavity and on the outer face of the mold; • forming a mask on the metal seed layer, the mask comprising a recess which exposes said region of the mold comprising the second cavity; • filling the second cavity of the mold and the recess of the mask with a metal by electrolytic growth from the seed layer; and • remove the mask and etch the metal seed layer.

[0026] The mold supply step may comprise the following substeps: • provide a stack successively comprising a support layer, a dielectric layer and a thin layer; • forming the first cavities by etching the thin layer down to the dielectric layer, then etching the dielectric layer selectively with respect to the thin layer and the support layer; and • form the second cavity by etching at least the thin layer and the dielectric layer.

[0027] Alternatively, the mold providing step may comprise the following substeps: • provide a stack successively comprising a support layer, a dielectric layer and a thin layer; • form the first cavities by anisotropically etching the thin layer down to the dielectric layer, then over-etching the thin layer; and • form the second cavity by etching at least the thin layer down to the dielectric layer. BRIEF DESCRIPTION OF THE FIGURES

[0028] Other characteristics and advantages of the invention will emerge clearly from the description given below, for information purposes only and in no way limiting, with reference to the following figures: • [Fig.l], previously described, represents an electronic structure comprising an interconnection film according to the prior art; • [Fig.2] schematically represents a first embodiment of the interconnection film according to the first aspect of the invention; • [Fig.3] schematically represents a second embodiment of the interconnection film; • [Fig.4] schematically represents a third embodiment of the interconnection film; • [Fig.5] schematically represents a preferred embodiment of an electronic structure according to the second aspect of the invention, the electronic structure comprising a substrate, an electronic component and the interconnection film arranged between the substrate and the electronic component; • [Fig.6] schematically represents the contact between a metallic element of the interconnection film and a conductive pad of the substrate; • Figures 7A to 7K represent steps of a method of manufacturing an interconnection film according to the third aspect of the invention; and • [Fig.8] represents a step in the manufacturing process which can replace the steps in figures 7B and 7C.

[0029] For clarity, identical or similar elements are identified by identical reference signs throughout the figures. DETAILED DESCRIPTION

[0030] Figures 2 to 4 show in schematic sectional view different embodiments of an interconnection film 40. This interconnection film 40 can in particular be used to mechanically and electrically connect an electronic component to a substrate, as described below in relation to [Fig.5].

[0031] In a manner common to all these embodiments, the interconnection film 40 comprises: • a base layer 41 formed from an electrically insulating polymer material, the base layer 41 comprising a first face 41a and a second face 41b opposite the first face 41a; • first patterns 42 projecting relative to the first face 41a, the first patterns 42 being formed from the same polymer material as the base layer 41; and • at least one metallic element 43 comprising: • a body 431 which extends through the base layer 41, from the first face 41a to the second face 41b; and • in the extension of the body 431, at least one second pattern 432 projecting relative to the first face 41a.

[0032] The first and second faces 41a-41b of the base layer 41 are advantageously flat and parallel to each other. The thickness of the base layer 41 (in other words the distance between the first and second faces 41a-41b) is for example between 10 μm and 250 μm, preferably between 50 μm and 200 μm.

[0033] The electrically insulating polymer material allows the interconnect film 40 to stretch, compress and / or twist. The interconnect film 40 is therefore a flexible and / or stretchable film. A film, layer or substrate is herein described as “flexible” when it can undergo, without breaking, a bending of a radius of curvature less than or equal to 1000 mm. The term “stretchable film” means a film which can elongate under mechanical stress by more than 5%. Preferably, the polymer material represents more than 50% of the total volume of the interconnection film 40. The remaining volume of the interconnection film 40 is advantageously constituted by the metallic elements 43.

[0034] The polymer material of the interconnect film 40 is preferably an elastomer. The elastomer material may be a silicone elastomer such as polydimethylsiloxane (PDMS), polyurethane, polyurethane-acrylate, polyvinylsiloxane, polypropylene, polylactic-co-glycolic acid (PLGA) or polyaddition silicone (also called "platinum silicone").

[0035] The first patterns 42 have a shape and dimensions such that the interconnection film 40 constitutes a dry adhesive film. The dry adhesive, inspired by the gecko's paws and whose adhesive power is based on Van der Waals forces, is obtained thanks to a micro-structuring on the surface of a material (typically a polymer material). This type of film will be called a "gecko tape". Thus, the interconnection film 40 has all or part of the properties of a dry adhesive. The properties of a dry adhesive are directional (or anisotropic) adhesion, good fixing with minimal mechanical preload, easy detachment, self-cleaning (absence of residue left on the surface) and a high capacity for reuse.

[0036] Dry adhesives are good adhesives mainly in the case of perpendicular ("pull-off") or lateral (shear) stress but less good in the case of peeling with a high peel angle. They are also breathable and often washable adhesives (advantageous in the case of direct use on the skin).

[0037] The interconnect film 40 can also be seen as having two opposite faces, one of its faces being structured so as to form a dry adhesive film.

[0038] The first patterns 42 preferably have an identical shape and dimensions (within manufacturing tolerances).

[0039] In the embodiments shown in Figures 2 to 4, the first patterns 42 have a mushroom shape. They are then similar to the spatulas present at the end of the gecko's setae. Each first pattern 42 comprises a pillar 421 (forming the foot of the mushroom) and a cap 422. The pillar 421 extends from the first face 41a, preferably perpendicular to the first face 41a. It thus comprises a first end secured to the base layer 4L. The cap 422 is located at a second opposite end (i.e. distant from the first face 41a) of the pillar 421 and has, in a plane parallel to the first face 41a, di- dimensions greater than those of pillar 421.

[0040] The pillar 421 of the first patterns 42 has, in a plane parallel to the first face 41a, a section which is advantageously constant over the entire height of the pillar (pillars of cylindrical shape, shown in Figures 2 to 4) or decreasing as it moves away from the first face 41a (pillars of truncated cone shape). This section is for example round, rectangular (in particular square) or hexagonal.

[0041] The dimensions of the section of the pillar 421 (measured in an orthonormal reference frame) are advantageously between 5 pm and 100 pm. The height of the pillar 421 (measured perpendicular to the first face 41a) can be between 5 pm and 30 pm.

[0042] The cap 422 of the first patterns 42 has (in a plane parallel to the first face 41a) a section whose dimensions are greater than those of the pillar 421. This section, preferably round or oval, may be constant over the entire height of the cap or increasing away from the second end of the pillar 421, as shown in [Fig. 4]. The maximum dimensions of the cap 422, at its top (i.e. at the end furthest from the first face 41a) are preferably equal to the dimensions of the pillar 421 plus a value δ of between 1 μm and 6 μm. Thus, for example, we will have d2 = dl+ô in the case of a pillar 421 of round section (diameter dl) and a cap 422 of round section (diameter d2) or x2 = xl+ô and y2 = yl+ô in the case of a pillar 4211 of rectangular section (dimensions xl, y 1) and a cap 422 of oval section (dimensions x2, y2). The height of the cap 422 is preferably between 1 pm and 5 pm.

[0043] In an alternative embodiment not shown in the figures, the first patterns 42 are pillars of constant section over their entire height (cylindrical pillars) or of increasing section moving away from the first face 41a (truncated conical pillars). The section of the pillars is for example round, rectangular (in particular square) or hexagonal. The pillars preferably extend perpendicular to the first face 41a.

[0044] As described previously, the interconnection film 40 comprises one or more metal elements 43 passing through the base layer 4L. As an example, FIGS. 2 to 4 show three metal elements 43, each metal element 43 comprising a body 431 and a plurality of second patterns 432 (here two).

[0045] Each metal element 43 may have the purpose of making an electrical connection between two objects arranged on either side of the interconnection film 40. The metal elements 43 may have different shapes and dimensions (depending on the objects to be connected). The number N of second patterns 432 per metal element may also vary between the metal elements 43 (N is a natural integer greater than or equal to 1).

[0046] In the remainder of the description, the example of an interconnection film 40 comprising several metal elements 43 with several second patterns 432 each will be taken. This description, however, remains valid in the case of a single metal element 43 (comprising one or more second patterns 432) and in the case of metal elements each comprising a single second pattern 432.

[0047] The metal elements 43 are made of solid metal (or full metal), that is to say they are made of one or more metals and are free of interstices (unlike a metal element made of agglomerated metal particles, for example). The metal elements 43 are for example made of copper, nickel, gold, silver, aluminum or an alloy of these metals.

[0048] The metallic elements 43 thus have a high electrical conductivity, much higher than that of a metallic element comprising conductive particles mixed with a polymer material.

[0049] The body 431 of the metal elements 43 is coated with the electrically insulating polymer material of the base layer 4L. The polymer material thus constitutes one or more electrically insulating zones which separate the metal elements 43, also called metal inserts.

[0050] The body 431 has, in a plane parallel to the first face 41a, a section which is advantageously constant over its entire height (equal to the thickness of the base layer 41). This section is for example round, rectangular (in particular square) or hexagonal. The dimensions of the section of the body 431 (measured in an orthonormal reference frame) are advantageously between 2 μm and 50 μm.

[0051] The second metal patterns 432 have a different shape (and function) than the first polymer patterns 42. Their role is to come into contact with the object located on the side of the first face 41a of the base layer 41, in order to make an electrical connection. They do not participate (or almost not at all) in the dry adhesion of the interconnection film 40, unlike the first patterns 42.

[0052] The second patterns 432 preferably have an identical shape and dimensions (within manufacturing tolerances).

[0053] The second patterns 432 have, in a plane parallel to the first face 41a, a constant or decreasing section moving away from the first face 41a. This geometry allows the second patterns 432 to be easily demolded, without damage, despite their high rigidity (due to the fact that they are made of solid metal).

[0054] The section of the second patterns 432 is for example round, rectangular (in particular square) or hexagonal. Its dimensions (measured in an orthonormal reference frame) are advantageously between 5 pm and 100 pm, preferably between 5 pm and 15 pm. The height of the second patterns 432 may be greater than or equal to the height of the first patterns 42.

[0055] In the embodiments of Figures 3 and 4, each metal element 43 comprises, in addition to the body 431 and the second patterns 432, a head 433 in the extension of the body 431. This head 433, or collar, rests partly on the second face 41b of the base layer 41. It makes it possible to obtain better electrical contact with the object to be connected, located on the side of the second face 41b. In addition, it improves the retention of the metal element 43 in the base layer 41, in particular during the demolding step of the manufacturing method described later.

[0056] The head 433 has, in the plane of the second face 41b, dimensions greater than those of the body 431. The maximum dimensions of the head 433, at the level of the second face 41b, are preferably equal to the dimensions of the body 431 plus a value δ of between 1 μm and 10 μm. Its inner, flat face rests on the base layer 4L. Its outer face may be flat or rounded.

[0057] Conversely, in the embodiment of [Fig.2], each metal element 43 is without a head and therefore only comprises the body 431 and the second patterns 432.

[0058] The first patterns 42 made of polymer material may be distributed regularly on the first face 41a of the base layer 41, in order to obtain homogeneous adhesion of the interconnection film 40. They then have a first repetition pitch in a first direction and a second repetition pitch in a second direction different from the first direction. The second repetition pitch may be equal to the first repetition pitch.

[0059] All of the first patterns 42 present on the first face 41a thus constitute a network. The network of first patterns 42 may in particular be rectangular (directions D1-D2 perpendicular), square (directions D1-D2 perpendicular and repetition pitch P1-P2 equal) or parallelogram-shaped (angle between directions D1-D2 between 0° and 90° exclusive). The network of first patterns 42 advantageously occupies more than 50%, and preferably more than 90%, of the surface area of ​​the first face 41a.

[0060] The second patterns 432 of the metal elements 43 can be integrated into the network of the first patterns 42 (respecting the first and second repetition pitches). They then take the place of certain first patterns 42.

[0061] [Fig. 5] illustrates an example of use of the interconnection film 40. This figure schematically represents an electronic structure 2 comprising a substrate 10, an electronic component 20 and the interconnection film 40 arranged between the substrate 10 and the electronic component 20. In the absence of mechanical constraints, the substrate 10, the electronic component 20 and the interconnection film 40 extend along parallel planes.

[0062] The substrate 10 is advantageously flexible (radius of curvature less than or equal to 1000 mm). Preferably, the substrate 10 can undergo, without breaking, a bending of a radius of curvature less than or equal to 200 mm and more preferably still less than or equal to 50 mm. A flexible substrate 10 gives flexibility to the electronic structure 2, which allows it to be positioned on a non-planar support or on a surface which deforms over time, such as a moving body. The electronic structure 2 thus finds numerous applications in the medical field as a patch worn by a person, for example on a wrist, an arm or a torso.

[0063] By way of example, the electronic structure 2 can be part of a system for measuring temperature, heart rate, blood pressure or oxygen level, an actimetry system (measurement and analysis of movements), a system for measuring skin secretion (e.g.sweat), an electrical or optical stimulation system, or a drug delivery system (also called a transdermal patch).

[0064] The electronic structure 2 itself can be described as flexible (or supple) when it is capable of bending to present a radius of curvature less than or equal to 1000 mm (preferably less than or equal to 200 mm and more preferably still less than or equal to 50 mm) without suffering damage.

[0065] The substrate 10 preferably comprises a support film 11 and at least one electrically conductive pad 12 called an interconnection pad arranged on the support film 11 or opening onto the surface of the support film 11. It may also comprise a network of electrical interconnections connected to the interconnection pad 12 (this network comprising, for example, buried conductive tracks and vias connecting the conductive tracks together). The substrate 10 may be a printed circuit (or PCB), a flexible substrate, a screen or another electronic component.

[0066] In the following description, it will be considered that the substrate 10 comprises a plurality of interconnection pads 12. For the sake of simplification, only two interconnection pads 12 have been shown in the section plane of [Fig. 5] (this section plane being perpendicular to the planes of the substrate 10, the electronic component 20 and the interconnection film 40).

[0067] The support film 11 is advantageously made of a flexible material, that is to say a material having a Young's modulus less than or equal to 10 GPa, and preferably less than or equal to 5 GPa. The support film 11 is preferably made of a polymer material, for example a polyester such as polyethylene naphthalate (or PEN) or polyethylene terephthalate (PET), a polyimide (PI), polytetrafluoroethylene (PTFE), polyetheretherketone (PEEK), polycarbonate (PC) or polyethersulfone (PES).

[0068] Alternatively, the support film 11 is made of a rigid material (> 50 GPa), for example glass, ceramic, silicon or metal. The support film 11 may however present a thickness allowing the substrate 10 to fulfill the condition of bending without rupture indicated above.

[0069] The thickness of the support film 11 is preferably between 50 μm and 250 μm when it is made of a flexible material (e.g. polymer material) and less than 1 mm when it is made of a rigid material such as glass or silicon.

[0070] The interconnection pads 12 may be metallic, for example made of copper (Cu), silver (Ag), gold (Au), aluminum (Al), tungsten (W), nickel (Ni), platinum (Pt), titanium (Ti) or ruthenium (Ru). They may also be made of indium tin oxide (or ITO for "indium tin oxide" in English) or of a conductive polymer such as poly(3,4-ethylenedioxythiophene) called PEDOT. They may be produced by deposition and etching of one or more layers of metal, by screen printing from a paste or ink loaded with metal particles or by additive means (material jet, 3D printing). Each interconnection pad 12 may consist of a single layer or a stack of several layers having different functions (e.g., adhesion layer, diffusion barrier layer and inert finishing layer). The thickness of the interconnection pads 12 may be between 50 nm and 5 pm, and preferably between 100 nm and 2 pm.

[0071] The electronic component 20 may be an integrated circuit (for example an application-specific integrated circuit (or ASIC, for “application-specific integrated circuit” in English), a sensor (temperature, heart rate, etc.), an actuator, a stimulator, a microbattery or an RFID chip. Its thickness is advantageously less than or equal to 1 mm, preferably less than or equal to 100 μm, in order to maximize the flexibility properties of the electronic structure 2.

[0072] The electronic component 20 comprises at least one connection pad 21 opening onto a so-called active face of the component (in other words, a part of the active face is formed by the connection pad 21). The connection pad 21 is preferably coated in a dielectric layer 22. It advantageously forms a flat surface with the dielectric layer 22. The dielectric layer 22, also called the passivation layer, is made of an electrically insulating material.

[0073] As illustrated in [Fig.5], the electronic component 20 may comprise a plurality of distinct connection pads 21 contained in the dielectric layer 22. The connection pads 21 typically constitute the input and output terminals of the electronic component 20.

[0074] The connection pads 21 are preferably made of metal, for example copper (Cu), silver (Ag), gold (Au), aluminum (Al), aluminum alloy of type AISi or AlCu, tungsten (W), nickel (Ni), platinum (Pt), titanium (Ti) or ruthenium (Ru).

[0075] The active face of the electronic component 20 is turned towards the substrate 10. Thus, the electronic component 20 is interconnected to the substrate 10 according to a technique flip-chip type interconnection.

[0076] At least one metallic element 43 of the interconnection film 40, called an electrical interconnection element, provides the electrical connection between the electronic component 20 and the substrate 10. This metallic element 43 can be arranged to electrically connect an interconnection pad 12 of the substrate 10 to a connection pad 21 of the electronic component 20.

[0077] Preferably, the interconnection film 40 comprises several electrical interconnection elements.

[0078] The second patterns 432 improve the resistance of the electrical interconnection elements to mechanical stresses, in particular to tensile, shear and / or bending stresses.

[0079] One or more metallic elements 43 of the interconnection film 40 may not serve as electrical interconnection elements between the substrate 10 and the electronic component 20.

[0080] In the configuration of [Fig.5], the first face 41a of the base layer 41 is arranged facing the substrate 10 and the second face 41b of the base layer 41 is arranged facing the electronic component 20. The first patterns 42 and the second patterns 432 are therefore in contact with the substrate 10.

[0081] The second face 41b of the base layer 41 is advantageously bonded to the electronic component 20. In other words, a layer of glue 50 separates the electronic component 20 and the second face 41b of the base layer 4L.

[0082] In another configuration not shown in the figures, the first face 41a of the base layer 41 is arranged facing the electronic component 20 and the second face 41b of the base layer 41 is arranged facing the substrate 10. The first patterns 42 and the second patterns 432 are therefore in contact with the electronic component 20. The second face 41b of the base layer 41 can be bonded to the substrate 10.

[0083] In order for the interconnection film 40 to adhere to the substrate 10 (respectively to the electronic component 20) by means of the first patterns 42 (dry adhesion), pressure is applied to the second face 41b of the base layer 41, for example by means of the electronic component 20 (respectively of the substrate 10). In doing so, the first polymer patterns 42 temporarily deform (elastically).

[0084] The fact that the second patterns 432 have a height greater than or equal to that of the first patterns 42 guarantees electrical contact even after the first patterns 42 have regained their initial shape. The compression of the first patterns 42, and therefore the difference in height between the first patterns 42 and the second patterns 432, can be between 1 μm and 2 μm.

[0085] [Fig. 6] shows that the second patterns 432 of the metal elements 43 can flex or deform in contact with the substrate 10, in particular when they have a height greater than that of the first patterns 42, even after the pressure has been released.

[0086] Thanks to the interconnection film 40 consisting mainly of the polymer material, the electronic structure 2 has excellent resistance to mechanical stresses, in particular to tensile (stretching), bending and shear stresses.

[0087] In addition to applications in the medical field, the interconnect film 40 can be used to functionalize a surface, such as a screen or a dashboard. It can also facilitate the disassembly of an electronic component or serve for testing an electronic component on an electronic board.

[0088] Figures 7A to 7K show steps S1 to S10 of a method for manufacturing the interconnect film 40 described above.

[0089] Steps 7A to 7D relate to the provision of a mold 70 comprising first cavities 71 intended for the formation of the first patterns 42 and at least one second cavity 72 intended for the formation of a second pattern 432. Thus, the first cavities 71 have the shape and dimensions of the first patterns 42 and the second cavity 72 has the shape and dimensions of a second pattern 432. The first cavities 71 and the second cavity 72 extend from an outer face (or upper face) 70a of the mold 70, preferably perpendicular to the plane of this outer face 70a.

[0090] The manufacturing method will be described below using the example of a mold 70 comprising several second cavities 72 to form several second patterns 432 belonging to a plurality of metal elements 43.

[0091] The mold 70 can be manufactured from a stack 700, provided in step S1 of [Fig.7A]. The stack 700 successively comprises a support layer 710, a dielectric layer 720 and a thin layer 730. The surface of the thin layer 730 constitutes the outer face (or upper face) 70a of the mold 70.

[0092] The support layer 710 is preferably made of a semiconductor material, for example silicon.

[0093] The dielectric layer 720 is preferably a buried oxide layer (or BOX layer, for “buried oxide layer” in English), for example made of silicon dioxide (SiO2). Its thickness is preferably between 1 μm and 5 μm.

[0094] The thin layer 730 (also called active layer, device layer or upper layer) is preferably made of a semiconductor material, for example monocrystalline silicon. Its thickness is preferably less than or equal to 30 pm, more preferably between 5 pm and 30 pm.

[0095] The stack 700 may in particular be a multilayer structure of silicon type. on insulator or SOI (“Silicon On Insulator” in English), commonly called SOI substrate.

[0096] In step S2 of [Fig.7B], a first portion 71a of the first cavities 71 is formed by etching the thin layer 730 down to the dielectric layer 720. The etching is accomplished through a first etching mask (not shown), for example made of photosensitive resin, previously formed on the thin layer 730. The thin layer 730 is preferably etched anisotropically, for example by deep reactive ion etching (DRIE) or by reactive ion etching using an inductively coupled plasma (RIE-ICP). The dielectric layer 720 serves as a stop layer for the etching.

[0097] Then, in step S3 of [Fig.7C], a second portion 71b of the first cavities 71 is formed by etching the dielectric layer 720 selectively with respect to the support layer 710 and the thin layer 730. This etching is preferably an isotropic etching, for example a wet etching in a bath or vapor of hydrofluoric acid (HF) in the case of a dielectric layer 720 made of SiO2.

[0098] The first portion 71a of the first cavities 71 located in the thin layer 730 is intended to form the pillar 421 of the first patterns 42, while the second portion 71b of the first cavities 71 located in the dielectric layer 720 is intended to form the cap 422 of the first patterns 42.

[0099] The first etching mask can be removed after etching step S2 of [Fig.7B] or after etching step S3 of [Fig.7C].

[0100] [Fig.7D] represents a step S4 of forming the second cavities 72 of the mold 70, here by etching at least the thin layer 730 and the dielectric layer 720. This etching is accomplished through a second etching mask (not shown), previously formed on the thin layer 730. The second etching mask is preferably made of a dry film photosensitive resin, to avoid filling the first cavities 71 of the mold 70.

[0101] In a first embodiment, step S4 of forming the second cavities 72 comprises two successive etching operations (through the second etching mask): • anisotropic etching (e.g. by DRIE or RIE-ICP) of the thin layer 730, with stop on the dielectric layer 720; and • anisotropic etching (e.g. by RIE) of the dielectric layer 720 with stop on the support layer 710.

[0102] The second cavities 72 then have a depth equal to that of the first cavities 71 (and equal to the sum of the thicknesses of the thin layer 730 and of the dielectric layer 720).

[0103] In a second embodiment, step S4 of forming the second cavities 72 includes three successive etching operations (through the second etching mask): • anisotropic etching (e.g. by DRIE or RIE-ICP) of the thin layer 730, with stop on the dielectric layer 720; • anisotropic etching (e.g. by RIE) of the dielectric layer 720 with stop on the support layer 710; and • anisotropic etching of a surface part of the support layer 710 (typically to a depth of between 1 pm and 2 pm).

[0104] The second etching mask is removed after step S4 of forming the second cavities 72.

[0105] Step S4 of forming the second cavities 72 (see [Fig.7D]) can be accomplished before steps S2 and S3 of forming the first cavities 71 (see Figs.7B-7C).

[0106] Steps S5 to S8 represented by FIGS. 7E to 7H relate to the formation of the metal elements 43 of the interconnection film 40.

[0107] In S5 (see [Fig.7E]), a metal seed layer 73 is deposited in the first cavities 71, in the second cavities 72 and on the outer face 70a of the mold 70. The metal seed layer 73 is deposited by a conformal deposition technique, such as chemical vapor deposition (or CVD). It thus covers the walls of the first and second cavities 71-72, without filling them entirely, and the outer face 70a of the mold. The metal seed layer 73 is for example made of a titanium and copper alloy (TiCu), a titanium, titanium nitride and copper alloy (TiTiNCu), a titanium, nickel and gold alloy (TiNiAu) or a titanium, titanium nitride and gold alloy (TiTiNAu).

[0108] Then, in S6 (cf. [Fig.7F]), a mask 74 is formed on the metal seed layer 73. The mask 74 comprises recesses 741, each recess 741 exposing a region of the mold 70 dedicated to the formation of a metal element 43 of the interconnection film 40. Each region of the mold 70 dedicated to the formation of a metal element 43 comprises one or more second cavities 72 (among the plurality of second cavities 72 of the mold). The mask 74 is preferably made of a dry film photosensitive resin, to avoid filling the first and second cavities 71-72 of the mold 70 (during its formation).

[0109] During a step S7 represented by [Fig.7G], the second cavities 72 of the mold 70 and the recesses 741 of the mask 74 are filled with a metal by electrolytic growth from the seed layer 73. The second patterns 432 of the metal elements 43 are thus formed inside the second cavities 72 and the body 431 of the metal elements 43 in the recesses 741 of the mask 74, on the outer surface 70a of the mold 70. The growth can continue after the filling complete with the recesses 741 so as to form the heads 433 of the metal elements 43 (the metal overflowing onto the mask 74).

[0110] In S8 (cf. [Fig.7H]), the mask 74 is removed then the metal seed layer 73 is etched (outside the regions occupied by the metal elements 43).

[0111] In step S9 of [Fig.71], an electrically insulating polymer material 75 is deposited in the first cavities 71 and on the outer face 70a of the mold 70, so as to form a polymer film which fills the first cavities 71 and coats the body 431 of the metal elements 43. The polymer material, initially in liquid form, is deposited (cast) on the mold 70, in the first cavities 71 and around the metal elements 43, then hardened or crosslinked (under conditions specific to each polymer material).

[0112] The polymer material 75 can be deposited in excess and completely cover the metal elements 43. The upper face of the metal elements 43 is then exposed during a step S10 represented by [Fig.7J], for example by chemical-mechanical polishing or etching of the polymer (for example by RIE).

[0113] Finally, in step SI 1 of [Fig.7K], the polymer film and the metal elements 43 trapped in the polymer film are extracted from the mold 70. The assembly obtained at the end of this demolding step SI 1 constitutes the interconnection film 40. The polymer film forms the base layer 41 and the first patterns 42 of the interconnection film 40. The first patterns 42 are easily demolded because they are made of polymer material. The second patterns 432 of the metal elements 43 are just as easily demolded despite their rigidity, thanks to their particular geometry (different from that of the first patterns 42).

[0114] To obtain an interconnection film 40 whose two faces are structured, two films such as represented by [Fig.7K] can be manufactured then coupled together (at their non-structured face), for example by plasma-type surface activation then assembly by pressure.

[0115] [Fig.8] represents an alternative implementation of the step of forming the first cavities 71 of the mold 70. Rather than successively etching the thin layer 730 (step S2) and the dielectric layer 720 (step S3), the first cavities 71 are obtained by etching only the thin layer 730, first in an anisotropic manner (e.g. DRIE or RIE-ICP) with a stop on the dielectric layer 720, then by carrying out an over-etching of the thin layer 730 (i.e. the selective etching is continued so as to etch the thin layer 730 laterally, along the dielectric layer 720). First cavities 71 of flared shape are then obtained, making it possible to obtain the first patterns 42 of [Fig.4]. The lateral dimensions of this flare (and therefore of the cap 422) depend on the over-etching time (counted from the moment when the etching reaches the dielectric layer 720). For example, the diameter of the over-etched area at the interface with the dielectric layer 720 can be 15 pm for a starting cavity of 10 pm diameter (in the upper part of the thin layer 730).

[0116] The second cavities 72 can then be obtained either by etching (anisotropically) only the thin layer 730 up to the dielectric layer 720 (same depth as the first cavities 71), or by successively etching the thin layer 730 and the dielectric layer 720 (second cavities 72 deeper than the first cavities 71), as described previously in relation to [Fig.7D] (first embodiment).

[0117] Many variations and modifications of the interconnection film, its manufacturing method and the electronic structure will be apparent to those skilled in the art. In particular, the substrate 10 of the electronic structure 2 may not be flexible. In this case, the interconnection film 40 is advantageous for absorbing mechanical stresses due to the difference in the coefficients of thermal expansion between the substrate 10 and the electronic component 20.

Claims

Claims

1. An interconnection film (40) comprising: - a base layer (41) formed of an electrically insulating polymer material and comprising a first face (41a) and a second face (41b) opposite the first face; - a plurality of first patterns (42) projecting from the first face (41a), the first patterns being formed of the electrically insulating polymer material and configured so that the interconnection film (40) constitutes a dry adhesive film; - a metal element (43) comprising: • a body (431) which extends through the base layer (41), from the first face (41a) to the second face (41b); and • in the extension of the body (431), at least one second pattern (432) projecting from the first face;characterized in that the metallic element (43) is made of solid metal and in that said at least one second pattern (432) of the metallic element (43) has a shape different from that of the first patterns (42) and, in a plane parallel to the first face (41a), a constant or decreasing section moving away from the first face.;

2. The interconnect film (40) of claim 1, wherein each first pattern (42) comprises a pillar (421) extending from the first face (41a) of the base layer (41) and a cap (422) located at one end of the pillar, the cap having, in a plane parallel to the first face, dimensions greater than those of the pillar.

3. Interconnection film (40) according to one of claims 1 and 2, in which the metallic element (43) further comprises, in the extension of the body (431), a head (433) which rests on the second face (41b) of the base layer (41).

4. An interconnection film (40) according to any one of claims 1 to 3, wherein said at least one second pattern (432) of the metal element (43) has a height greater than or equal to that of the first patterns (42).

5. Electronic structure (2) comprising: - a substrate (10); - an electronic component (20); - an interconnection film (40) according to any one of claims 1 to 4, arranged between the substrate (10) and the electronic component (20) so as to electrically and mechanically connect the electronic component to the substrate.

6. Electronic structure (2) according to claim 5, wherein: - the substrate (10) comprises an electrically conductive pad (12); - the electronic component (20) comprises a connection pad (21); and - the metallic element (43) of the interconnection film (40) connects the electrically conductive pad (12) to the connection pad (21).

7. Electronic structure (2) according to one of claims 5 and 6, wherein: - the first face (41a) of the base layer (41) is arranged opposite the substrate (10); - the first patterns (42) are in contact with the substrate (10); and - the second face (41b) of the base layer is arranged opposite the electronic component (20).

8. Electronic structure (2) according to claim 7, wherein the second face (41b) of the base layer (41) is separated from the electronic component (20) by a layer of glue (50).

9. A method of manufacturing an interconnect film (40), comprising the following steps: providing (S1-S4) a mold (70) comprising first cavities (71) and a second cavity (72), the first cavities and the second cavity extending from an outer face (70a) of the mold, the second cavity (72) having a shape different from that of the first cavities (71) and, in a plane parallel to the outer face (70a), a constant or decreasing section moving away from the outer face; - forming (S5-S8) a metal element (73) in a region of the mold (70) comprising the second cavity (72), the metal element comprising a body (431) arranged on the outer face (70a) of the mold and, in the extension of the body, a projecting pattern (432) arranged inside the second cavity (72); - depositing (S9) an electrically insulating polymer material (75) in the first cavities (71) and on the outer face (70a) of the mold (70), so as to form a polymer film which coats the body (431) of the metal element (43); and - demould (S 11) the polymer film and the metal element (43).

10. The method of claim 9, wherein the step of forming the metal element (43) comprises the following substeps: - depositing (S5) a metallic germination layer (73) in the second cavity (72) and on the outer face (70a) of the mold (70); - forming (S6) a mask (74) on the metal seed layer (73), the mask comprising a recess (741) which exposes said region of the mold (70) comprising the second cavity (72); - filling (S7) the second cavity (72) of the mold (70) and the recess (741) of the mask (74) with a metal by electrolytic growth from the seed layer (73); and - remove (S8) the mask (74) and etch the metal seed layer (73).

11. A method according to one of claims 9 and 10, wherein the step of providing the mold (70) comprises the following sub-steps: - providing (SI) a stack (700) successively comprising a support layer (710), a dielectric layer (720) and a thin layer (730); - forming the first cavities (71) by etching (S2) the thin layer (730) up to the dielectric layer (720), then (S3) by etching the dielectric layer (720) selectively with respect to the thin layer (730) and the support layer (710); and - forming (S4) the second cavity (72) by etching at least the thin layer (730) and the dielectric layer (720).

12. Method according to one of claims 9 and 10, wherein the step of providing the mold (70) comprises the following sub-steps: - providing (SI) a stack (700) successively comprising a support layer (710), a dielectric layer (720) and a thin layer (730); - forming the first cavities (71) by anisotropically etching the thin layer (730) up to the dielectric layer (720), then by over-etching the thin layer (730); and - forming the second cavity (72) by etching at least the thin layer (730) up to the dielectric layer (720).

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