Phase-change material-based switch

Abstract

Phase-Change Material-Based Switch This description relates to a switch (100) based on a phase-change material formed on a support substrate (101) and comprising: – a region (107) of said phase-change material connecting the first and second conduction electrodes (105A, 105B) of the switch; and – a waveguide (111) interposed between the support substrate and the region of said phase-change material and comprising a central region (111C) of a first material having a first optical index surrounded by a peripheral region (103) of a second material having a second optical index, lower than the first optical index. Figure for the abbreviation: Fig. 1A

Description

Title of the invention: Switch based on phase change material Technical field

[0001] The present description relates generally to electronic devices, in particular to switches. The present description relates more particularly to switches based on phase change material. Prior art

[0002] Various applications use switches to interrupt or authorize, depending on the state of a control signal of the switch, the passage of an electrical signal between different parts of an electronic circuit. In the field of telecommunications, radio frequency signal switches, also called radio frequency (RF) switches, are integrated in various types of devices such as reconfigurable filters, phase shifters, reconfigurable antennas with a transmitting array or a reflecting array, etc. These switches make it possible in particular to implement various functions: routing RF signals, switching an antenna between transmitting and receiving modes, activating a filter corresponding to a given frequency band, etc.RF switches are particularly useful in the design and construction of reconfigurable radiating surfaces in sub-terahertz frequency bands, for example of the order of one or several hundred gigahertz, for applications in medical imaging and industrial control, earth and deep space observation, as well as for radars and broadband telecommunications systems.

[0003] RF switches are conventionally made, depending on the desired performance level, based on field effect transistors, PIN diodes, electromechanical relays or MEMS (Microelectromechanical System) components. However, these switches are not entirely satisfactory, particularly for high-frequency applications, for example around 100 GHz. The performance of an RF switch depends on a parameter called the "figure of merit" (FoM), equal to the product of the on-state resistance R0N by the off-state capacitance COff of the RF switch. The resistance R0N and the capacitance COff respectively reflect the insertion losses of the switch in the on-state and the isolation of the switch in the off-state, two quantities to be minimized for radiofrequency applications.

[0004] In order to overcome the limitations of the aforementioned RF switches, switches based on a phase change material, capable of alternating between a phase crystalline, electrically conductive phase and an amorphous, electrically insulating phase have been proposed. Switches based on a phase-change material have, compared to conventional RF switches based on transistors and PIN diodes, a figure of merit that is about ten times lower. The figure of merit is, for example, of the order of 100 fs for RF switches based on transistors and PIN diodes, compared to about 10 fs for RF switches based on phase-change material. The latter also have the advantage of having non-volatile on and off states, the switch requiring no power consumption to be maintained in either state. MEMS-based RF switches can achieve relatively low figures of merit, but have various disadvantages, including reliability and large size problems, and have volatile states.

[0005] Among the phase change material based switches, directly heated switches, controlled by circulating a current through the phase change material, or indirectly heated switches, for example by circulating a current pulse through a heating element electrically insulated from the phase change material, have been proposed. However, these switches have various drawbacks. In directly heated switches, the control signal disturbs the radio frequency signal transmitted between the conduction electrodes of the switch. In indirectly heated switches, the heating element is the source of a parasitic capacitance and parasitic resistances. Furthermore, indirectly heated switches comprise metallic conductive tracks used to transmit the control signal from a current source to the heating element.In the case where the RF switch is part of a reconfigurable antenna, the presence of these tracks strongly disturbs the field radiated by the antenna.

[0006] In order to overcome these drawbacks, RF switches based on phase-change material and with optical actuation have been proposed. Optical actuation is, in these switches, achieved by direct irradiation of the phase-change material by means of a laser. However, this requires precise alignment of the laser beam with the phase-change material, thus greatly complicating the integration of such switches, particularly in reconfigurable antenna applications that may comprise hundreds of switches. Summary of the invention

[0007] There is a need to overcome all or part of the disadvantages of existing switches. In particular, it would be desirable to optimize the production of switches based on optically actuated phase-change material.

[0008] For this, one embodiment provides a switch based on a material with phase change formed on a support substrate and comprising: - a region of said phase change material connecting first and second conduction electrodes of the switch; and - a waveguide interposed between the support substrate and the region made of said phase change material and comprising a central region made of a first material having a first optical index surrounded by a peripheral region made of a second material having a second optical index, lower than the first optical index.

[0009] According to one embodiment, the central region of the waveguide is separated from the region of said phase change material by a distance less than or equal to 100 nm, preferably less than or equal to 50 nm, more preferably equal to approximately 20 nm.

[0010] According to one embodiment, the waveguide further comprises an input coupling element having a Bragg structure comprising regularly spaced concentric ring portions.

[0011] According to one embodiment, the switch further comprises a laser source intended to illuminate the coupling element with laser radiation having a central wavelength equal to approximately 915 nm.

[0012] According to one embodiment, the input coupling element is separated from the support substrate by a distance equal to approximately 1,500 nm, plus or minus 100 nm.

[0013] According to one embodiment, the central region of the waveguide is separated from the support substrate by a distance equal to approximately 1,500 nm, plus or minus 100 nm.

[0014] According to one embodiment, the switch further comprises first and second conductive vias extending between the region of said phase change material and the first and second conduction electrodes, respectively.

[0015] According to one embodiment, the central region of the waveguide is separated from the first and second conductive vias by a distance greater than or equal to 0.3 pm.

[0016] According to one embodiment, the region of said phase change material is coated with a passivation layer.

[0017] According to one embodiment, the central and peripheral regions of the waveguide are respectively made of silicon nitride and silicon dioxide.

[0018] According to one embodiment, the central region of the waveguide has a height equal to approximately 300 nm and a width equal to approximately 600 nm.

[0019] Another embodiment provides a method of manufacturing a switch based on a phase change material comprising the following successive steps: a) forming, on a support substrate, first and second electrodes of switch conduction; b) forming, on the support substrate, a waveguide comprising a central region made of a first material having a first optical index surrounded by a peripheral region made of a second material having a second optical index, lower than the first optical index; and c) forming, on the support substrate, a region of said phase change material connecting the first and second conduction electrodes of the switch, the waveguide being interposed between the support substrate and the region of said phase change material. Brief description of the drawings

[0020] These characteristics and advantages, as well as others, will be explained in detail in the following description of particular embodiments given without limitation in relation to the attached figures among which:

[0021] [Fig.1A] is a schematic and partial top view of an example of a switch based on phase change material according to one embodiment;

[0022] [Fig.lB] and [Fig.lC] are schematic and partial sectional views respectively along planes BB and CC of [Fig.lA], of the switch based on phase-change material of [Fig.lA]; and

[0023] [Fig.2A], [Fig.2B], [Fig.2C], [Fig.2D] and [Fig.2E] are schematic and partial sectional views along plane CC of [Fig.1A], illustrating successive steps of an example of a method for manufacturing the switch based on phase-change material of figures 1A, 1B and 1C according to one embodiment. Description of the embodiments

[0024] The same elements have been designated by the same references in the different figures. In particular, the structural and / or functional elements common to the different embodiments may have the same references and may have identical structural, dimensional and material properties.

[0025] For the sake of clarity, only the steps and elements useful for understanding the described embodiments have been shown and are detailed. In particular, the applications in which phase-change material-based switches can be provided are not detailed, the described embodiments and variants being compatible with usual applications implementing switches.

[0026] Unless otherwise specified, when referring to two elements connected to each other, this means directly connected without intermediate elements other than conductors, and when referring to two elements connected (in English "coupled") to each other, this means that these two elements can be connected or be connected through one or more other elements.

[0027] In the following description, when reference is made to absolute position qualifiers, such as the terms "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as the terms "above", "below", "upper", "lower", etc., or to orientation qualifiers, such as the terms "horizontal", "vertical", etc., reference is made, unless otherwise specified, to the orientation of the figures.

[0028] Unless otherwise specified, the expressions “about”, “approximately”, “substantially”, and “of the order of” mean to within 10%, preferably to within 5%.

[0029] In the following description, the terms “insulator” and “conductor” mean respectively, unless otherwise specified, electrically insulating and electrically conductive.

[0030] [Fig.lA] is a schematic and partial top view of an example of a switch 100 based on phase change material according to one embodiment. [Fig.lB] and [Fig.lC] are schematic and partial sectional views respectively along planes BB and CC of [Fig.lA], of the switch 100 based on phase change material of [Fig.lA]. In the example illustrated, plane BB is orthogonal to the conduction direction of the switch 100 and plane CC is parallel to the conduction direction of the switch 100.

[0031] In the example shown, the switch 100 is formed on a support substrate 101. The support substrate 101 is for example a wafer or a piece of wafer made of a semiconductor material, for example silicon. Alternatively, the support substrate 101 may be made of an insulating material, for example glass, quartz, etc. In the orientation of figures 1A, 1B and 1C, the planes BB and CC are orthogonal to the upper face of the support substrate 101.

[0032] In the illustrated example, the support substrate 101 is coated with an insulating layer 103. In the orientation of FIGS. 1A, 1B and 1C, the insulating layer 103 is located on and in contact with the upper face of the support substrate 101. By way of example, the layer 103 is an oxide layer, for example silicon dioxide (SiO2). The insulating layer 103 has not been shown in [Fig. 1A] in order not to overload the drawing.

[0033] In the example shown, the switch 100 further comprises conduction electrodes 105A and 105B separated from the support substrate 101 by portions of the insulating layer 103. Portions of the insulating layer 103 are thus interposed vertically between the upper face of the support substrate 101 and the conduction electrodes 105A and 105B. In the example shown, the conduction electrodes 105A and 105B are separated from each other by a portion of the insulating layer 103 extending laterally between them. The conduction electrodes 105A and 105B are for example intended to be connected to a radiofrequency communication circuit, not detailed in the figures. The conduction electrodes 105A and 105B are made of a conductive material. For example, the conduction electrodes 105A and 105B are made of a metal, for example copper or aluminum, or a metal alloy. Furthermore, the conduction electrodes 105A and 105B may have a single-layer or multi-layer structure. In the case of a multi-layer structure, the conduction electrodes 105A and 105B are for example made up of a stack comprising, from bottom to top in the orientation of figures 1B and 1C: - a titanium layer having, for example, a thickness equal to approximately 10 nm; - a layer of a copper and aluminum alloy having, for example, a thickness equal to approximately 440 nm; - a titanium layer having, for example, a thickness equal to approximately 10 nm; and - a titanium nitride layer having, for example, a thickness equal to approximately 100 nm.

[0034] In the illustrated example, the switch 100 further comprises a region 107 made of a phase-change material connecting the conduction electrodes 105A and 105B. In this example, the region 107 made of phase-change material extends laterally in line with a portion of each conduction electrode 105A, 105B. A first end of the region 107 made of phase-change material is located in line with the conduction electrode 105A and a second end of the region 107, opposite the first end, is located in line with the conduction electrode 105A. By way of example, the region 107 made of phase-change material has a thickness of the order of 100 nm.

[0035] In the example shown, conductive vias 109A and 109B extend vertically, through a portion of the insulating layer 103, from the lower face of the phase change material region 107 to the upper faces of the conduction electrodes 105A and 105B, respectively. The conductive vias 109A and 109B are located respectively in the vicinity of the first and second ends of the phase change material region 107 and make it possible to electrically connect the region 107 with the conduction electrodes 105A and 105B, respectively. For example, the conductive vias 109A and 109B are made of a metal, for example copper, aluminum or tungsten, or of a metal alloy.

[0036] In the example illustrated, the lateral faces of the conductive vias 109A and 109B are bordered, or coated, by the insulating layer 103. Furthermore, the lateral faces and the parts of the lower face of the region 107 made of phase-change material not located in contact with the upper faces of the conductive vias 109A and 109B are bordered, or coated, by the insulating layer 103.

[0037] The region 107 made of phase change material is for example made of a material called "chalcogenide", i.e. a material or alloy comprising at least one chalcogen element, for example a material of the germanium telluride (GeTe), antimony telluride (SbTe) or germanium-antimony-tellurium (GeSbTe, commonly referred to by the acronym "GST") family. Alternatively, region 107 is made of vanadium dioxide (VO2).

[0038] Generally, phase change materials are materials capable of alternating, under the effect of a temperature variation, between a crystalline phase and an amorphous phase, the amorphous phase having an electrical resistance greater than that of the crystalline phase. In the case of the switch 100, this phenomenon is used to obtain a blocked state, preventing the flow of a current between the conduction electrodes 105A and 105B, when the material of the region 107 is in the amorphous phase, and an on state, allowing the flow of current between the conduction electrodes 105A and 105B, when the material of the region 107 is in the crystalline phase.

[0039] In the example shown, the switch 100 further comprises a waveguide 111 interposed between the support substrate 101 and the region 107 made of phase-change material. In this example, the waveguide 111 extends laterally along a main direction substantially orthogonal to the conduction direction of the switch 100. In the example shown, the waveguide 111 comprises a central region 11 IC, or core, surrounded by an insulating peripheral region constituted by a portion of the insulating layer 103. The central region 11 IC and the peripheral region of the waveguide 111 are made of materials chosen so as to obtain a contrast of optical indices making it possible to confine and guide an optical mode of interest, emitted by a laser source LS, inside the central region 11 IC. By way of example, the laser source LS comprises a laser diode or a pulsed laser.

[0040] The material of the central region 11 IC of the waveguide 111 has a higher optical index than that of the peripheral region. For example, the central region 11 IC of the waveguide 111 is made of silicon nitride (SiN) and the peripheral region is made of silicon dioxide. The use of silicon nitride for the production of the central region 11 IC has the advantage of being compatible with CMOS (Complementary Metal Oxide Semiconductor) manufacturing processes. Furthermore, silicon nitride makes it possible to obtain high thickness uniformity, good confinement of the optical wave during propagation in the waveguide 111 and low propagation losses.With the exception of the part located directly above the region 107 made of phase-change material, the central region 11 IC of the waveguide 111 is for example surrounded by a thickness of material of the insulating layer 103 greater than 1.5 μm in order to limit propagation losses in the waveguide 111.

[0041] The plane CC of [Fig. 1C] is substantially orthogonal to a direction of propagation of the laser radiation in the waveguide 111. In the example shown, the peripheral region of the waveguide 111 (the insulating layer 103, in this example) covers, or borders, the faces of the central region 11 IC parallel to the direction of propagation of the laser radiation (the lateral, lower and upper faces of the central region 11 IC parallel to an axis orthogonal to the plane CC). In this example, a portion of the insulating layer 103 extends vertically from a face of the central region 11 IC located opposite the region 107 made of phase change material (the upper face of the central region 11 IC, in the orientation of [Fig. 1C]) to a face of the region 107 made of phase change material located opposite (the lower face of the region 107, in the orientation of [Fig. 1C]).

[0042] In the example shown, the central region 11 IC has, in sectional view along the plane CC orthogonal to the direction of propagation of the laser radiation in the waveguide 111, a section of substantially rectangular shape. By way of example, the section of the central region 11 IC has a width equal to approximately 600 nm and a height, or thickness, equal to approximately 300 nm. Furthermore, the central region 11 IC is separated from the region 107 made of phase-change material by a distance less than or equal to 100 nm, for example less than or equal to 50 nm, for example equal to approximately 20 nm. In this example, the distance separating the central region 11 IC from the region 107 made of phase-change material corresponds to a thickness of a portion of the insulating layer 103 interposed between the central region 11 IC and the region 107 made of phase-change material.Alternatively, the phase change material region 107 may be located on and in contact with the central region 11 IC of the waveguide 111.

[0043] The coupling of the optical power of the radiation transmitted inside the central region 11 IC of the waveguide 111 with the phase change material of the region 107 is carried out by evanescent field. The inventors have noticed that the closer the central region 11 IC is to the region 107, the higher the optical coupling rate and the stronger the reflection, due to the change in index. On the other hand, the further the central region 11 IC is from the region 107, the weaker the reflection and the weaker the coupling rate.The distance separating the region 107 made of phase-change material from the central region 11 IC of the waveguide 111 is for example chosen so as to obtain a compromise between the absorption of the optical wave by the phase-change material of the region 107 and the reflection of the optical wave on the entry face of the region 107 made of phase-change material (the lower face of the region 107, in the orientation of figures 1B and 1C).

[0044] For example, the central region 11 IC of the waveguide 111 is separated laterally from the conductive vias 109A and 109B by a distance greater than or equal to 0.3 pm, in a case where the conductive vias 109A and 109B have, along the propagation axis of the radiation inside the central region 11 IC of the waveguide 111, a lateral dimension less than 10 pm, and a distance greater than or equal to 0.5 pm, for example greater than or equal to 1 pm, in a case where the conductive vias 109A and 109B have, along the propagation axis of the radiation inside the central region 11 IC of the waveguide 111, a lateral dimension greater than or equal to 10 pm. This makes it possible to avoid or limit the absorption, by the material of the conductive vias 109A and 109B, of the radiation transmitted by the waveguide 111.

[0045] The waveguide 111 is for example of the single-mode type, that is to say that it is adapted to confine and guide a single optical mode for each type of polarization. The waveguide 111 is for example more precisely adapted to confine and guide a single optical mode chosen from a zero-order transverse electric mode (TE0) and a zero-order transverse magnetic mode (TM0). Because the TE0 and TM0 modes are orthogonal, they cannot couple to each other in the waveguide 111. The choice of the mode confined and guided by the waveguide 111, between the TE0 mode and the TM0 mode, is determined by the polarization of the laser source LS. Thus, in a case where the laser source LS emits radiation having a transverse electric polarization TE, the waveguide 111 is adapted to confine and guide the zero-order transverse electric mode TE0 only.

[0046] For example, the radiation emitted by the laser source LS has a central wavelength of the order of 915 nm. This makes it possible to obtain a compromise between the absorption of the radiation by the phase-change material of the region 107, which is all the greater the smaller the emission wavelength of the laser source LS, and the attenuation of the radiation transmitted by the waveguide 111, which is all the lower the larger the emission wavelength of the laser source LS. For example, the absorption of the radiation by the phase-change material is twice as great when the wavelength of the radiation is equal to approximately 915 nm than when it is equal to approximately 1550 nm.Furthermore, in the case where the region 11 IC is made of silicon nitride, the attenuation of the radiation transmitted by the waveguide 111 becomes too significant at wavelengths below 500 nm to allow a phase change of the material of the region 107 to be obtained.

[0047] On the side of its end intended to be illuminated by the laser source LS, the waveguide 111 comprises for example an input coupling element 113, also called the input surface of the waveguide 111. In the example shown, the input coupling element 113 is a diffraction grating having a Bragg structure making it possible to capture the radiation emitted by the laser source LS and to propagate this radiation along the waveguide 111 up to the region 107 of phase change material. In the example illustrated, the input coupling element 113 comprises portions of concentric rings spaced regularly, for example spaced by a distance equal to approximately 340 nm, and each having, for example, in top view, identical widths, for example of the order of 340 nm. This advantageously makes it possible to produce the input coupling element 113 using photolithography equipment having a resolution of the order of 300 nm, the width and spacing of the ring portions of the input coupling element 113 being all the smaller as the central wavelength of the laser radiation emitted by the source LS is small.

[0048] The ring portions of the input coupling element 113 are laterally separated from each other by parts of the insulating layer 103. For example, the concentric ring portions of the input coupling element 113 are made of the same material as the central region 11 IC of the waveguide 111. The central region 11 IC of the waveguide 111 and the rings of the input coupling element 113 are for example formed in the same insulating layer 115. The insulating layer 115 extends for example above the majority of the upper face of the support substrate 101. In the example shown, parts of the insulating layer 115 are located on and in contact with parts of the upper faces of the conduction electrodes 105A and 105B.

[0049] The input coupling element 113 is for example separated from the support substrate 101 by a distance equal to approximately 1,500 nm, to within plus or minus 100 nm. This advantageously makes it possible to take advantage of a constructive reflection of the optical wave transmitted by the waveguide 111 on the upper face of the support substrate 101, in particular in the case where the support substrate 101 is made of silicon, and to optimize a coupling between the laser source LS and the waveguide 111 by means of the input coupling element 113.

[0050] The central region 11 IC of the waveguide 111 is for example separated from the support substrate 101 by a distance greater than 1 μm. This advantageously makes it possible to avoid or limit optical absorption phenomena, by the support substrate 101, of the radiation transmitted by the waveguide 111. In the example shown, the central region 11 IC of the waveguide 111 is separated from the support substrate 101 by the same distance as the input coupling element 113. In this case, the central region 11 IC is separated from the support substrate 101 by a distance equal to approximately 1,500 nm, to within plus or minus 100 nm. The conduction electrodes 105A and 105B, and the parts of the insulating layer 103 interposed between the support substrate 101 and the conduction electrodes 105A and 105B have, for example, a cumulative thickness equal to approximately 1,500 nm, to within plus or minus 100 nm. For example, the conduction electrodes conduction 105A and 105B each have a thickness equal to approximately 560 nm, and the portions of the insulating layer 103 interposed between the support substrate 101 and the conduction electrodes 105A and 105B have a thickness equal to approximately 940 nm.

[0051] As a variant, an insulating layer, for example a silicon dioxide layer, having for example a thickness equal to approximately 20 nm, may be interposed between the insulating layer 115 and the conduction electrodes 105A and 105B. In this case, the thickness of the conduction electrodes 105A and 105B and / or the thickness of the parts of the insulating layer 103 interposed between the support substrate 101 and the conduction electrodes 105A and 105B are adapted to obtain, between the lower face of the region 107 of phase-change material and the upper face of the support substrate 101, a distance equal to approximately 1,500 nm, to within plus or minus 100 nm.For example, in the case where an insulating layer of about 20 nm thickness is provided between the insulating layer 115 and the conduction electrodes 105A and 105B, the conduction electrodes 105A and 105B each have a thickness equal to about 560 nm, and the portions of the insulating layer 103 interposed between the support substrate 101 and the conduction electrodes 105A and 105B have a thickness equal to about 920 nm.

[0052] In the example shown, the face of the region 107 made of phase change material opposite the support substrate 101 (the upper face of the region 107, in the orientation of FIGS. 1B and 1C) is coated with a passivation layer 117. In this example, the passivation layer 117 is located on and in contact with the upper face of the region 107 made of phase change material. The passivation layer 117 makes it possible to protect the phase change material of the region 107 against oxidation. In the example shown, the lateral and upper faces of the passivation layer 117 are coated with the insulating layer 103. In the example illustrated, a portion of the insulating layer 103 extends over the upper face of the passivation layer 117. The passivation layer 117 has, for example, a thickness equal to approximately 20 nm. For example, the passivation layer 117 is made of silicon nitride or germanium nitride.The passivation layer 117 has not been shown in [Fig.lA] in order not to overload the drawing. Alternatively, the passivation layer 117 may be omitted.

[0053] Although this has not been illustrated in figures 1A, 1B and 1C, the switch 100 may further comprise contact recovery elements and / or conductive tracks, for example metallic, located on and in contact with the upper face of the insulating layer 103. The contact recovery elements and / or the conductive tracks are for example connected to the conduction electrodes 105A and 105B of the switch 100, and for example provide a radiofrequency signal routing function. contact recovery elements and / or the conductive tracks are for example separated from the central region 11 IC of the waveguide 111 by a distance greater than 1 pm, for example greater than 1.5 pm. This makes it possible to limit or avoid the absorption, by the material of the contact recovery elements and / or the conductive tracks, of the radiation transmitted by the waveguide 111.

[0054] To switch the switch 100 from the off state to the on state, the region 107 is heated, for example, using the laser source LS, via the waveguide 111, to a temperature T1 and for a duration d1. The temperature T1 and the duration d1 are chosen so as to cause a phase change of the material of the region 107 from the amorphous phase to the crystalline phase. For example, the temperature T1 is higher than a crystallization temperature and lower than a melting temperature of the phase change material and the duration d1 is between 100 ns and 1 ps.

[0055] Conversely, to switch the switch 100 from the on state to the off state, the region 107 is heated, for example, using the laser source LS, via the waveguide 111, to a temperature T2, higher than the temperature T1, and for a duration d2, lower than the duration d1. The temperature T2 and the duration d2 are chosen so as to cause a phase change of the material of the region 107 from the crystalline phase to the amorphous phase. For example, the temperature T2 is higher than the melting temperature of the phase change material and the duration d2 is between 10 ns and 100 ns.

[0056] An advantage of the switch 100 is that the waveguide 111 is placed under the region 107 of phase change material, i.e. between the support substrate 101 and the region 107 of phase change material. This makes it possible to provide the passivation layer 117 on the region 107 of phase change material in order to protect this material against oxidation during the manufacturing and use steps of the switch 100. If the waveguide 111 had been placed above the region 107 of phase change material, for example if the central region 11 IC of the waveguide had been located on and in contact with the passivation layer 117, this would have degraded the confinement of the optical wave inside the waveguide and this would have reduced the coupling with the phase change material of the region 107.Furthermore, providing that the central region 11 IC of the waveguide 111 is located above the region 107 made of phase change material would require etching the material of the central region 11 IC by stopping on the phase change material of the region 107, which would risk damaging the latter. This would greatly complicate the production of the switch 100.

[0057] [Fig.2A], [Fig.2B], [Fig.2C], [Fig.2D] and [Fig.2E] are schematic and partial sectional views along plane CC of [Fig.1A], illustrating steps successive sections of an example of a method of manufacturing the switch 100 based on phase change material of FIGS. 1A, 1B and 1C according to one embodiment.

[0058] [Fig.2A] illustrates more precisely a structure obtained at the end of a step of forming a part 103-1 of the insulating layer 103 on the side of the upper face of the support substrate 101. The part 103-1 of the insulating layer 103 is for example a thermal oxide layer located on and in contact with the upper face of the support substrate 101.

[0059] [Fig.2B] illustrates more precisely a structure obtained at the end of steps of forming the conduction electrodes 105A and 105B and another part 103-2 of the insulating layer 103 on the side of the upper face of the support substrate 101.

[0060] By way of example, one or more conductive layers, for example made of a metal or a metal alloy, are first deposited successively over the entire upper face of the portion 103-1 of the insulating layer 103. During this step, the conductive layer(s) are for example formed by PVD (Physical Vapor Deposition). The conduction electrodes 105A and 105B are for example then formed by photolithography then etching of the conductive layer(s).

[0061] The portion 103-2 of the insulating layer 103 is then deposited on the side of the upper face of the support substrate 101. The portion 103-2 of the insulating layer 103 then coats the portions of the upper face of the portion 103-1 not coated by the conduction electrodes 105A and 105B, as well as the lateral and upper faces of the conduction electrodes 105A and 105B. The portion 103-2 of the insulating layer 103 is for example formed by PECVD (from the English “Plasma-Enhanced Chemical Vapor Deposition”), for example by HDPCVD (from the English “High-Density Plasma Chemical Vapor Deposition”). For example, the part 103-2 of the insulating layer 103 has, after deposition, a thickness of the order of 700 nm.This thickness is then reduced, for example, by a chemical and mechanical polishing (CMP) operation with a stop on the conduction electrodes 105A and 105B, so that the part 103-2 of the insulating layer 103 is flush with the upper face of the conduction electrodes 105A and 105B.

[0062] [Fig.2C] illustrates more precisely a structure obtained at the end of steps of: a) deposition of the insulating layer 115 on the side of the upper face of the support substrate 101; b) structuring of the insulating layer 115; and c) depositing another part 103-3 of the insulating layer 103 on the side of the su- upper surface of the support substrate 101.

[0063] For example, the deposition of the insulating layer 115 is carried out by PECVD. The insulating layer 115 has, for example, a thickness equal to approximately 300 nm. The central region 11 IC and the input coupling element 113 (not visible in [Fig.2C]) of the waveguide 111 are formed at the end of the structuring step, for example by photolithography then etching, of the insulating layer 115.

[0064] By way of example, the deposition of the portion 103-3 of the insulating layer 103 is carried out by HDPCVD. The portion 103-3 of the insulating layer 103 has, for example, after deposition, a thickness of the order of 500 nm. The portion 103-3 of the insulating layer 103 is then, for example, planarized, for example by a chemical-mechanical polishing operation with a stop on the portions of the insulating layer 115 which remain after structuring so that the portion 103-3 of the insulating layer 103 is flush with the upper face of the insulating layer 115.

[0065] The insulating layer 115 has, for example, in top view, a surface area equal to at least 35%, for example equal to at least 75% and possibly up to 90%, of the surface area of ​​the support substrate 101. This advantageously makes it easier to stop the step of chemical mechanical polishing of the part 103-3 of the insulating layer 103.

[0066] [Fig.2D] illustrates more precisely a structure obtained at the end of steps of depositing another part 103-4 of the insulating layer 103 on the side of the upper face of the support substrate 101 and of forming the conductive vias 109A and 109B.

[0067] By way of example, the deposition of the portion 103-4 of the insulating layer 103 is carried out by PECVD. The portion 103-4 of the insulating layer 103 has, for example, after deposition, a thickness less than or equal to 100 nm, for example less than or equal to 50 nm, for example equal to approximately 20 nm.

[0068] Alternatively, the deposition of the portion 103-4 of the insulating layer 103 may be omitted.

[0069] The conductive vias 109A and 109B are for example formed by photolithography then etching, for example reactive ion etching (RIE), then deposition of one or more conductive layers, for example made of a metal or a metal alloy, on the side of the upper face of the support substrate 101.

[0070] In the example shown, the conductive vias 109A and 109B extend vertically from the upper face of the portion 103-4 of the insulating layer 103 to the upper faces of the conduction electrodes 105A and 105B, respectively. For example, each conductive via 109A, 109B consists of a stack comprising a layer of titanium nitride having, for example, a thickness equal to approximately 30 nm and formed by PVD coated with a layer of tungsten formed by CVD (from the English “Chemical Vapor Deposition”). The stack is for example then planarized by mechanical polishing. chemical with stop on the part 103-4 of the insulating layer 103 or with stop on the insulating layer 115, in the variant where the part 103-4 of the insulating layer 103 is omitted.

[0071] [Fig.2E] illustrates more precisely a structure obtained at the end of successive stages of: a) deposition of a layer 207 of phase change material on the side of the upper face of the support substrate 101; b) depositing an insulating layer 217 on the side of the upper face of the support substrate 101; c) depositing another portion 103-5 of the insulating layer 103 on the side of the upper face of the support substrate 101; and d) structuring of layers 207 and 217 and of part 103-5 of insulating layer 103.

[0072] For example, the layer 207 of phase change material is deposited by PVD.

[0073] The portion 103-5 of the insulating layer 103 is for example structured by photolithography then etching, for example RIE etching, so as to retain only a region of the portion 103-5 located directly above the future region 107 made of phase change material. The portion 103-5 of the insulating layer 103 is for example then used as a hard mask to structure the passivation layer 217 and the layer made of phase change material 207. The layers 217 and 207 are for example structured simultaneously, during the same step of photolithography then etching, for example RIE etching. The region 107 made of phase change material and the passivation layer 117 previously described in relation to FIGS. 1A, 1B and 1C are then obtained.

[0074] Starting from the structure illustrated in [Fig.2E], subsequent steps of depositing another part of the insulating layer 103, having for example a thickness of the order of 2 μm, then polishing, for example by CMP, this part of the insulating layer 103, for example so as to obtain a thickness of the order of 1.5 μm above the central region 11 IC of the waveguide 111, can be implemented. The structure previously described in relation to FIGS. 1A, 1B and 1C is for example thus obtained. For simplicity, FIGS. 1A, 1B and 1C illustrate an example in which the parts 103-1, 103-2, 103-3, 103-4 and 103-5 of the insulating layer 103 are made of the same material. This example is however not limiting, the different parts of the insulating layer 103 previously described in relation to FIGS. 2A to 2E being able, as a variant, to be made of different materials.

[0075] Furthermore, although this has not been detailed in the figures, subsequent steps of forming conductive vias extending vertically from the upper face of the insulating layer 103 to the upper face of the conduction electrodes 105A and 105B, through the insulating layer 115, followed by steps of forming contact recovery elements and / or conductive tracks located on and in contact with the upper faces of these vias can then be implemented. For example, the conductive vias are formed by making openings by photolithography then etching, for example RIE etching, in the insulating layers 103 and 115, these openings being for example then filled with a metal or a metal alloy.

[0076] By way of example, each contact recovery element is made up of a stack comprising, from bottom to top in the orientation of figures 1B and 1C: - a titanium layer having, for example, a thickness equal to approximately 10 nm; - a layer of a copper and aluminum alloy having, for example, a thickness equal to approximately 1 pm; - a titanium layer having, for example, a thickness equal to approximately 10 nm; and - a layer of titanium nitride having, for example, a thickness equal to approximately 100 nm.

[0077] The contact recovery elements and / or the conductive tracks are for example obtained by successive deposition, for example by PVD, of layers of the aforementioned materials, these depositions being for example followed by a structuring step by photolithography then etching.

[0078] An advantage of the method described above in relation to FIGS. 2A to 2E is that it makes it possible to form the central region 11 IC of the waveguide 111 on a flat surface. In particular, during the step described in relation to [Fig. 2B], a planarization step, for example by CMP, is carried out prior to the deposition of the insulating layer 115. The insulating layer 103-2 is for example more particularly planarized by CMP with a stop on the layer in which the conduction electrodes 105A and 105B are formed, or the upper layer of the stack in which the conduction electrodes 105A and 105B are formed, for example a titanium nitride layer. The stop surface during this step is for example greater than 35%, for example of the order of 50%, of the surface of the support substrate 101. This facilitates stopping the planarization operation.

[0079] The person skilled in the art could have considered forming the central region 11 IC of the waveguide 111 above the region 107 made of phase-change material. However, planarization with a stop on the region 107 made of phase-change material would prove complex to carry out, because the phase-change material of the region 107 would risk being damaged by chemical compounds used during the planarization operation. A solution to overcome this problem could consist of providing, on and in contact with the upper face of the region 107 made of phase-change material phase change, an etch stop layer to be removed later or to be taken into account in the operation of the switch 100. However, this would complicate the production of the switch 100. Furthermore, the surface area of ​​the region 107 made of phase change material being, for example, less than 1% of the surface area of ​​the support substrate 101, the stopping of the planarization operation could not be precisely controlled. Non-functional elements ("dummies", in English), for example pads, made of phase change material could be provided in order to increase the surface area of ​​the phase change material, for example to obtain regions of phase change material having a cumulative surface area greater than 35% of the surface area of ​​the support substrate 101. However, this would greatly complicate the design and production of the switch 100.

[0080] Although this has not been detailed, the switch 100 can be integrated into any type of device comprising at least one switch, possibly subject to adaptations within the scope of the person skilled in the art upon reading the present description. In particular, the person skilled in the art is capable, based on the indications of the present description, of integrating switches of the type of the switch 100 in radiofrequency applications, for example in reconfigurable antennas with a transmitter array or a reflector array.

[0081] Various embodiments and variations have been described. Those skilled in the art will understand that certain features of these various embodiments and variations could be combined, and other variations will occur to those skilled in the art.

[0082] Finally, the practical implementation of the described embodiments and variants is within the reach of those skilled in the art from the functional indications given above. In particular, the described embodiments are not limited to the particular examples of materials and dimensions mentioned in the present description.

Claims

Claims

1. Switch (100) based on a phase change material formed on a support substrate (101) and comprising: - a region (107) of said phase change material connecting first and second conduction electrodes (105A, 105B) of the switch; and - a waveguide (111) interposed between the support substrate and the region of said phase change material and comprising a central region (11 IC) of a first material having a first optical index surrounded by a peripheral region (103) of a second material having a second optical index, lower than the first optical index.

2. Switch (100) according to claim 1, wherein the central region (11 IC) of the waveguide (111) is separated from the region (107) of said phase change material by a distance less than or equal to 100 nm, preferably less than or equal to 50 nm, more preferably equal to approximately 20 nm.

3. The switch (100) of claim 1 or 2, wherein the waveguide (111) further comprises an input coupling element (113) having a Bragg structure comprising regularly spaced concentric ring portions.

4. The switch (100) of claim 3, further comprising a laser source (LS) for illuminating the coupling element (113) with laser radiation having a central wavelength of approximately 915 nm.

5. The switch (100) of claim 3 or 4, wherein the input coupling element (113) is separated from the support substrate (101) by a distance equal to about 1500 nm, plus or minus 100 nm.

6. A switch (100) according to any one of claims 1 to 5, wherein the central region (11 IC) of the waveguide (111) is separated from the support substrate (101) by a distance equal to approximately 1500 nm, plus or minus 100 nm.

7. A switch (100) according to any one of claims 1 to 6, further comprising first and second conductive vias (109A, 109B) extending between the region (107) of said phase change material and the first and second conduction electrodes (105A, 105B), respectively.

8. The switch (100) of claim 7, wherein the central region (11 IC) of the waveguide (111) is separated from the first and second conductive vias (109A, 109B) by a distance greater than or equal to 0.3 pm.

9. A switch (100) according to any one of claims 1 to 8, wherein the region (107) of said phase change material is coated with a passivation layer (117).

10. A switch (100) according to any one of claims 1 to 9, wherein the central (11 IC) and peripheral (103) regions of the waveguide (111) are respectively made of silicon nitride and silicon dioxide.

11. The switch (100) of any one of claims 1 to 10, wherein the central region (11 IC) of the waveguide (111) has a height equal to about 300 nm and a width equal to about 600 nm.

12. A method of manufacturing a switch (100) based on a phase-change material comprising the following successive steps: a) forming, on a support substrate (101), first and second conduction electrodes (105A, 105B) of the switch; b) forming, on the support substrate, a waveguide (111) comprising a central region (11 IC) made of a first material having a first optical index surrounded by a peripheral region (103) made of a second material having a second optical index, lower than the first optical index; and c) forming, on the support substrate, a region (107) made of said phase-change material connecting the first and second conduction electrodes of the switch, the waveguide being interposed between the support substrate and the region made of said phase-change material.

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