Semiconductor structures

Abstract

A semiconductor structure 100 comprises a silicon substrate 110 with a (100) crystal orientation; a first transition layer 120 comprising a bixbyite oxide which may be a rare earth oxide such as scandium oxide Sc2O3 over the substrate comprising a (111) crystal orientation; a first semiconductor layer 120 comprising a first III-N semiconductor material which may be GaN over the first transition layer; and an active region 140 for generating light over the first semiconductor layer comprising quantum dots (QDs) 142 which comprise a second III-N semiconductor material such as AlxGa1-xN or InxGa1-xN. The structure is applicable to photonic devices such as µLED devices and composition of QDs may be adjusted to achieve a peak photoluminescence wavelength within the visible region. Plural active layers (Fig. 2: 140a-e) may be separated by barrier layers (Fig. 2: 150a-e) further comprising a III-N semiconductor material. One or more further transition layers (Fig. 4: 410) may be disposed between the first transition layer and the semiconductor layer. A photonic device and a CMOS Si device may be integrated on a Si(100) substrate (Fig. 9: 902, 904).

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