Manufacturing method for semiconductor device

Abstract

To provide a semiconductor device with high reliability and mobility.SOLUTION: A manufacturing method for a semiconductor device includes forming a first metal oxide film mainly containing aluminum on a substrate, forming an amorphous oxide semiconductor film on the first metal oxide film under a condition with an oxygen partial pressure of 3% or more and 5% or less, processing the oxide semiconductor film into a patterned oxide semiconductor layer, crystallizing the oxide semiconductor layer by performing first heating processing on the patterned oxide semiconductor layer, processing the first metal oxide film using the crystallized oxide semiconductor layer as a mask, forming a gate insulating film on the oxide semiconductor layer, and forming a gate electrode on the gate insulating film. A film thickness of the oxide semiconductor film is more than 10 nm and 30 nm or less.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An embodiment of the present invention relates to a semiconductor device and a method for manufacturing the semiconductor device, particularly to a semiconductor device in which an oxide semiconductor is used as a channel and a method for manufacturing the semiconductor device. [Background technology]

[0002] In recent years, development of semiconductor devices using oxide semiconductors for the channel instead of amorphous silicon, low-temperature polysilicon, and single crystal silicon has been progressing (for example, Patent Documents 1 to 6). A semiconductor device using an oxide semiconductor for the channel can be formed with a simple structure and a low-temperature process, similar to a semiconductor device using amorphous silicon for the channel. It is known that a semiconductor device using an oxide semiconductor for the channel has a higher mobility than a semiconductor device using amorphous silicon for the channel. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2021-141338 A [Patent Document 2] JP 2014-099601 A [Patent Document 3] Patent Publication No. 2021-153196 [Patent Document 4] JP 2018-006730 A [Patent Document 5] JP 2016-184771 A [Patent Document 6] Patent Publication No. 2021-108405 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the field effect mobility of a thin film transistor including a conventional oxide semiconductor layer is not so high even when a crystalline oxide semiconductor layer is used. Therefore, it is desired to improve the crystal structure of the oxide semiconductor layer used in the thin film transistor and thereby improve the field effect mobility of the thin film transistor.

[0005] It is known that a semiconductor device having high mobility can be obtained by relatively increasing the ratio of indium element contained in an oxide semiconductor layer, but oxygen defects are likely to be formed in the oxide semiconductor layer. If many oxygen defects exist in a channel formed in the oxide semiconductor layer, this causes fluctuations in the electrical characteristics of the semiconductor device.

[0006] An object of one embodiment of the present invention is to provide a semiconductor device with high reliability and mobility. [Means for solving the problem]

[0007] A semiconductor device according to one embodiment of the present invention includes forming a first metal oxide film mainly composed of aluminum on a substrate, forming an amorphous oxide semiconductor film on the first metal oxide film under conditions where the oxygen partial pressure is 3% or more and 5% or less, processing the oxide semiconductor film into a patterned oxide semiconductor layer, performing a first heat treatment on the patterned oxide semiconductor layer to crystallize the oxide semiconductor layer, processing the first metal oxide film using the crystallized oxide semiconductor layer as a mask, forming a gate insulating film on the oxide semiconductor layer, and forming a gate electrode on the gate insulating film, wherein the oxide semiconductor film has a thickness of more than 10 nm and not more than 30 nm. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view showing an overview of a semiconductor device according to an embodiment of the present invention; [Diagram 2] 1 is a plan view showing an overview of a semiconductor device according to an embodiment of the present invention; [Diagram 3] 1 is a sequence diagram showing a method for manufacturing a semiconductor device according to an embodiment of the present invention; [Figure 4] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Diagram 5] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 6] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 7] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 8] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 9] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 10] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 11] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 12] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 13] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 14] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 15] 1 is a sequence diagram showing a method for manufacturing a semiconductor device according to an embodiment of the present invention; [Figure 16] 1A to 1C are cross-sectional views showing a method for manufacturing a semiconductor device according to an embodiment of the present invention. [Figure 17] 1 is a plan view showing an overview of a display device according to an embodiment of the present invention; [Figure 18] 1 is a block diagram showing a circuit configuration of a display device according to an embodiment of the present invention. [Figure 19] 1 is a circuit diagram showing a pixel circuit of a display device according to an embodiment of the present invention. [Figure 20] 1 is a cross-sectional view showing an overview of a display device according to an embodiment of the present invention. [Figure 21]2 is a plan view of a pixel electrode and a common electrode of the display device according to the embodiment of the present invention; [Figure 22] 1 is a circuit diagram showing a pixel circuit of a display device according to an embodiment of the present invention. [Figure 23] 1 is a cross-sectional view showing an overview of a display device according to an embodiment of the present invention. [Figure 24] 1 is a photograph of a surface of a semiconductor device taken with an optical microscope. [Diagram 25] 1 shows electrical characteristics (Id-Vg characteristics) of a semiconductor device 10 having an oxide semiconductor layer with a thickness of 10 nm. [Figure 26] 1 shows electrical characteristics (Id-Vg characteristics) of a semiconductor device 10 having an oxide semiconductor layer with a thickness of 20 nm. [Figure 27] 1 shows electrical characteristics (Id-Vg characteristics) of a semiconductor device 10 having an oxide semiconductor layer with a thickness of 30 nm. [Figure 28] 1 shows the intrinsic mobility of an oxide semiconductor film under each deposition condition. [Figure 29] 4 shows the variation ΔVth of the threshold voltage for each of the film formation conditions of the oxide semiconductor film. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Each embodiment of the present invention will be described below with reference to the drawings. The following disclosure is merely an example. A configuration that a person skilled in the art can easily come up with by appropriately modifying the configuration of the embodiment while maintaining the gist of the invention is naturally included in the scope of the present invention. In order to make the explanation clearer, the drawings may be schematic in terms of the width, film thickness, shape, etc. of each part compared to the actual embodiment. However, the illustrated shapes are merely examples and do not limit the interpretation of the present invention. In this specification and each figure, elements similar to those described above with respect to the previous figures may be given the same reference numerals, and detailed explanations may be omitted as appropriate.

[0010] The term "semiconductor device" refers to any device that can function by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one form of a semiconductor device. The semiconductor device of the following embodiment may be, for example, a display device, an integrated circuit (IC) such as a microprocessor (Micro-Processing Unit: MPU), or a transistor used in a memory circuit.

[0011] The term "display device" refers to a structure that displays an image using an electro-optical layer. For example, the term display device may refer to a display panel including an electro-optical layer, or may refer to a structure in which other optical members (e.g., a polarizing member, a backlight, a touch panel, etc.) are attached to a display cell. The "electro-optical layer" may include a liquid crystal layer, an electroluminescent (EL) layer, an electrochromic (EC) layer, and an electrophoretic layer, unless technically inconsistent. Therefore, the embodiments described below will be described by taking a liquid crystal display device including a liquid crystal layer and an organic EL display device including an organic EL layer as examples of display devices, but the structure in this embodiment can be applied to display devices including other electro-optical layers as described above.

[0012] In each embodiment of the present invention, the direction from the substrate toward the oxide semiconductor layer is referred to as "up" or "upper". Conversely, the direction from the oxide semiconductor layer toward the substrate is referred to as "down" or "down". In this way, for convenience of explanation, the terms "up" or "down" are used in the explanation, but for example, the substrate and the oxide semiconductor layer may be arranged so that their vertical relationship is reversed from that shown in the figure. In the following explanation, for example, the expression "oxide semiconductor layer on a substrate" merely describes the vertical relationship between the substrate and the oxide semiconductor layer as described above, and other members may be arranged between the substrate and the oxide semiconductor layer. "Up" or "down" means the order of stacking in a structure in which multiple layers are stacked, and when a pixel electrode is expressed as being above a transistor, the transistor and the pixel electrode may not overlap in a planar view. On the other hand, when a pixel electrode is expressed as being vertically above a transistor, the transistor and the pixel electrode may overlap in a planar view. Note that the planar view refers to a view from a direction perpendicular to the surface of the substrate.

[0013] In this specification and the like, the terms "film" and "layer" may be interchangeable in some cases.

[0014] In this specification, unless otherwise specified, expressions such as "α includes A, B, or C," "α includes any one of A, B, and C," and "α includes one selected from the group consisting of A, B, and C" do not exclude cases where α includes multiple combinations of A to C. Furthermore, these expressions do not exclude cases where α includes other elements.

[0015] The following embodiments can be combined with each other as long as no technical contradiction occurs.

[0016] First embodiment A semiconductor device 10 according to one embodiment of the present invention will be described with reference to FIGS.

[0017] [Configuration of semiconductor device 10] The configuration of a semiconductor device 10 according to one embodiment of the present invention will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a cross-sectional view showing an overview of the semiconductor device 10 according to one embodiment of the present invention. Fig. 2 is a plan view showing an overview of the semiconductor device 10 according to one embodiment of the present invention. The cross section taken along the dashed dotted line shown in Fig. 2 corresponds to the cross-sectional view shown in Fig. 1.

[0018] 1, the semiconductor device 10 is provided above a substrate 100. The semiconductor device 10 includes a gate electrode 105, gate insulating films 110 and 120, an oxide semiconductor layer 144, a gate insulating film 150, a gate electrode 160, insulating films 170 and 180, a source electrode 201, and a drain electrode 203. When the source electrode 201 and the drain electrode 203 are not particularly distinguished from each other, they may be collectively referred to as the source electrode and the drain electrode 200. Furthermore, the oxide semiconductor layer 144, the gate insulating film 150, and the gate electrode 160 may be referred to as a transistor.

[0019] The gate electrode 105 is provided on the substrate 100. The gate insulating film 110 and the gate insulating film 120 are provided on the substrate 100 and the gate electrode 105. The metal oxide layer 132 is provided on the gate insulating film 120. The metal oxide layer 132 is in contact with the gate insulating film 120. The oxide semiconductor layer 144 is provided on the metal oxide layer 132. The oxide semiconductor layer 144 is in contact with the metal oxide layer 132. Of the main surfaces of the oxide semiconductor layer 144, the surface in contact with the metal oxide layer 132 is referred to as the lower surface. An end of the metal oxide layer 132 and an end of the oxide semiconductor layer 144 are approximately aligned.

[0020] The oxide semiconductor layer 144 has light-transmitting properties. The oxide semiconductor layer 144 is divided into a source region 144S, a drain region 144D, and a channel region 144CH. The channel region 144CH is a region of the oxide semiconductor layer 144 vertically below the gate electrode 160. The source region 144S is a region of the oxide semiconductor layer 144 that does not overlap with the gate electrode 160 and is closer to the source electrode 201 than the channel region 144CH. The drain region 144D is a region of the oxide semiconductor layer 144 that does not overlap with the gate electrode 160 and is closer to the drain electrode 203 than the channel region 144CH.

[0021] The oxide semiconductor layer 144 has a polycrystalline structure including a plurality of crystal grains. Although details will be described later, the oxide semiconductor layer 144 having a polycrystalline structure can be formed by using a polycrystalline oxide semiconductor (Poly-OS) technique. The configuration of the oxide semiconductor layer 144 will be described below, and an oxide semiconductor having a polycrystalline structure may be referred to as Poly-OS.

[0022] The crystal grains contained in the Poly-OS have a crystal grain size of 0.1 μm or more, preferably 0.3 μm or more, and more preferably 0.5 μm or more, observed from the top surface of the oxide semiconductor layer 144 (or in the film thickness direction of the oxide semiconductor layer 144) or from a cross section of the oxide semiconductor layer 144. The crystal grain size of the crystal grains can be obtained by, for example, cross-sectional SEM observation, cross-sectional TEM observation, or an electron backscattered diffraction (EBSD) method.

[0023] The oxide semiconductor layer 144 has a thickness greater than 10 nm and less than or equal to 30 nm. As described above, since the crystal grain size of the crystal grains contained in the Poly-OS is 0.1 μm or more, the oxide semiconductor layer 144 includes a region including only one crystal grain in the thickness direction.

[0024] As will be described in detail later, the oxide semiconductor layer 144 includes two or more metals including an indium element, and the ratio of the indium element to the two or more metals is 50% or more. As metal elements other than the indium element, gallium (Ga), zinc (Zn), aluminum (Al), hafnium (Hf), yttrium (Y), zirconium (Zr), and lanthanoid elements are used. Elements other than the above may be used as the oxide semiconductor layer 144. In this embodiment, the oxide semiconductor layer 144 is preferably an IGO-based oxide semiconductor. An IGO-based oxide semiconductor refers to an oxide semiconductor containing an indium element, a gallium element, and oxygen.

[0025] The source region 144S and the drain region 144D contain an impurity element. By adding the impurity element, the resistivity of the source region 144S and the drain region 144D in the oxide semiconductor layer 144 can be sufficiently reduced as compared with that of the channel region 144CH. That is, the source region 144S and the drain region 144D have physical properties as a conductor.

[0026] The concentration of impurity elements contained in the source region 144S and the drain region 144D is 1×10 18 cm -3 More than 1×10 21 cm -3 Here, the impurity element refers to argon (Ar), phosphorus (P), or boron (B). 18 cm -3 More than 1×10 21 cm -3 If the following is present, it is presumed that an impurity element has been intentionally added by ion implantation or doping. However, if the source region 144S and the drain region 144D contain more than 1×10 18 cm -3 Impurity elements other than argon (Ar), phosphorus (P), or boron (B) may be included at a concentration of less than 1000 nm.

[0027] The gate electrode 160 faces the oxide semiconductor layer 144. The gate insulating film 150 is provided between the oxide semiconductor layer 144 and the gate electrode 160. The gate insulating film 150 is in contact with the oxide semiconductor layer 144. Of the main surfaces of the oxide semiconductor layer 144, the surface in contact with the gate insulating film 150 is referred to as the upper surface. The surface between the upper surface and the lower surface is referred to as the side surface. The insulating films 170 and 180 are provided on the gate insulating film 150 and the gate electrode 160. The insulating films 170 and 180 are provided with openings 171 and 173 that reach the oxide semiconductor layer 144. The source electrode 201 is provided inside the opening 171. The source electrode 201 is in contact with the oxide semiconductor layer 144 at the bottom of the opening 171. The drain electrode 203 is provided inside the opening 173. The drain electrode 203 is in contact with the oxide semiconductor layer 144 at the bottom of the opening 173.

[0028] The gate electrode 160 functions as a light-shielding film for the top gate of the semiconductor device 10 and the oxide semiconductor layer 144. The gate insulating film 150 functions as a gate insulating film for the top gate and releases oxygen by heat treatment in the manufacturing process. The insulating films 170 and 180 insulate the gate electrode 160 from the source electrode and the drain electrode 200 and reduce the parasitic capacitance between them. The operation of the semiconductor device 10 is mainly controlled by the voltage supplied to the gate electrode 160. An auxiliary voltage is supplied to the gate electrode 105. However, when the gate electrode 105 is simply used as a light-shielding film, the gate electrode 105 may be floating without being supplied with a specific voltage. In other words, the gate electrode 105 may be simply called a "light-shielding film".

[0029] As shown in FIG. 2, in a plan view, the plane pattern of the metal oxide layer 132 is substantially the same as the plane pattern of the oxide semiconductor layer 144. With reference to FIGS. 1 and 2, the lower surface of the oxide semiconductor layer 144 is covered with the metal oxide layer 132. In particular, in the semiconductor device 10 according to this embodiment, the entire lower surface of the oxide semiconductor layer 144 is covered with the metal oxide layer 132. In the D1 direction, the width of the gate electrode 105 is larger than the width of the gate electrode 160. The D1 direction is a direction connecting the source electrode 201 and the drain electrode 203, and is a direction indicating the channel length L of the semiconductor device 10. Specifically, the length in the D1 direction of a region (channel region 144CH) where the oxide semiconductor layer 144 and the gate electrode 160 overlap is the channel length L, and the width of the channel region 144CH in the D2 direction is the channel width W.

[0030] In the present embodiment, the configuration in which the entire lower surface of the oxide semiconductor layer 144 is covered by the metal oxide layer 132 is illustrated, but the present invention is not limited to this configuration. For example, a part of the lower surface of the oxide semiconductor layer 144 may not be in contact with the metal oxide layer 132. For example, the entire lower surface of the oxide semiconductor layer 144 in the channel region 144CH may be covered by the metal oxide layer 132, and the entire or part of the lower surface of the oxide semiconductor layer 144 in the source region 144S and the drain region 144D may not be covered by the metal oxide layer 132. That is, the entire or part of the lower surface of the oxide semiconductor layer 144 in the source region 144S and the drain region 144D may not be in contact with the metal oxide layer 132. However, in the above configuration, a part of the lower surface of the oxide semiconductor layer 144 in the channel region 144CH may not be covered by the metal oxide layer 132, and the other part of the lower surface may be in contact with the metal oxide layer 132.

[0031] 1 illustrates a configuration in which the source and drain electrodes 200 do not overlap the gate electrodes 105 and 160 in a plan view, but the present invention is not limited to this configuration. For example, the source and drain electrodes 200 may overlap at least one of the gate electrodes 105 and 160 in a plan view. The above configuration is merely one embodiment, and the present invention is not limited to the above configuration.

[0032] In this embodiment, a configuration in which a top-gate transistor in which a gate electrode is provided on the oxide semiconductor layer 144 is used as the semiconductor device 10 is exemplified, but is not limited to this configuration. For example, a bottom-gate transistor in which a gate electrode is provided only below the oxide semiconductor layer 144, or a dual-gate transistor in which a gate electrode is provided above and below the oxide semiconductor layer 144 may be used as the semiconductor device 10. The above configuration is merely one embodiment, and the present invention is not limited to the above configuration.

[0033] [Method of Manufacturing Semiconductor Device 10] A method for manufacturing the semiconductor device 10 according to one embodiment of the present invention will be described with reference to Fig. 3 to Fig. 14. Fig. 3 is a sequence diagram showing a method for manufacturing the semiconductor device 10 according to one embodiment of the present invention. Fig. 4 to Fig. 14 are cross-sectional views showing the method for manufacturing the semiconductor device 10 according to one embodiment of the present invention.

[0034] As shown in FIGS. 3 and 4, a gate electrode 105 is formed as a bottom gate on a substrate 100, and gate insulating films 110 and 120 are formed on the gate electrode 105 ("Form Bottom GI / GE" in step S1001 in FIG. 3).

[0035] As the substrate 100, a rigid substrate having light-transmitting properties, such as a glass substrate, a quartz substrate, and a sapphire substrate, is used. When the substrate 100 needs to be flexible, a polyimide substrate, an acrylic substrate, a siloxane substrate, a fluororesin substrate, or a substrate containing a resin is used as the substrate 100. When a substrate containing a resin is used as the substrate 100, impurity elements may be introduced into the resin in order to improve the heat resistance of the substrate 100. In particular, when the semiconductor device 10 is a top-emission display, the substrate 100 does not need to be transparent, so impurities that deteriorate the transparency of the substrate 100 may be used. When the semiconductor device 10 is used in an integrated circuit that is not a display device, a substrate not having light-transmitting properties, such as a semiconductor substrate such as a silicon substrate, a silicon carbide substrate, or a compound semiconductor substrate, or a conductive substrate such as a stainless steel substrate, may be used as the substrate 100.

[0036] The gate electrode 105 is formed by processing a conductive film formed by a sputtering method. A general metal material is used for the gate electrode 105. For example, aluminum (Al), titanium (Ti), chromium (Cr), cobalt (Co), nickel (Ni), molybdenum (Mo), hafnium (Hf), tantalum (Ta), tungsten (W), bismuth (Bi), silver (Ag), copper (Cu), and alloys or compounds thereof are used for the gate electrode 105. The above materials may be used as a single layer or a laminated layer for the gate electrode 105.

[0037] The gate insulating films 110 and 120 are formed by a chemical vapor deposition (CVD) method or a sputtering method. A general insulating material is used as the gate insulating films 110 and 120. For example, silicon oxide (SiO x ), silicon oxynitride (SiO x N y ), silicon nitride (SiN x ), silicon oxynitride (SiN x O y ) and other inorganic insulating materials are used. x Ny is a silicon compound that contains a smaller ratio (x>y) of nitrogen (N) than oxygen (O). SiN x O y is a silicon compound that contains a smaller proportion of oxygen than nitrogen (x>y).

[0038] The gate insulating films 110 and 120 are preferably formed in this order from the substrate 100, with an insulating material containing nitrogen and an insulating material containing oxygen. For example, by using an insulating material containing nitrogen as the gate insulating film 110, it is possible to block impurities diffusing from the substrate 100 side toward the oxide semiconductor layer 144. In addition, by using an insulating material containing oxygen as the gate insulating film 120, it is possible to release oxygen by heat treatment. The temperature of the heat treatment at which the insulating material containing oxygen releases oxygen is, for example, 500° C. or less, 450° C. or less, or 400° C. or less. That is, the insulating material containing oxygen releases oxygen at the heat treatment temperature performed in the manufacturing process of the semiconductor device 10 when a glass substrate is used as the substrate 100. In this embodiment, for example, silicon nitride is formed as the gate insulating film 110. For example, silicon oxide is formed as the gate insulating film 120.

[0039] 3 and 5, a metal oxide film 130 is formed on the gate insulating film 120 (step S1002 “MO film formation” shown in FIG. 3). The metal oxide film 130 is formed by sputtering or atomic layer deposition (ALD).

[0040] A metal oxide containing aluminum as a main component is used as the metal oxide film 130. For example, aluminum oxide (AlO x ), aluminum oxide nitride (AlO x N y ), aluminum oxide nitride (AlNxOy), aluminum nitride (AlN x) is used. A metal oxide film containing aluminum as a main component means that the ratio of aluminum contained in the metal oxide film is 1% or more of the entire metal oxide film 130. The ratio of aluminum contained in the metal oxide film 130 may be 5% or more and 70% or less, 10% or more and 60% or less, or 30% or more and 50% or less of the entire metal oxide film 130. The above ratio may be a mass ratio or a weight ratio.

[0041] The thickness of the metal oxide film 130 is, for example, 1 nm to 50 nm, 1 nm to 30 nm, 1 nm to 20 nm, or 1 nm to 10 nm. In this embodiment, aluminum oxide is used as the metal oxide film 130. Aluminum oxide has high barrier properties against gases such as oxygen and hydrogen. In other words, the barrier properties refer to a function of suppressing the permeation of gases such as oxygen and hydrogen through aluminum oxide. That is, even if gases such as oxygen or hydrogen exist from a layer provided under the aluminum oxide film, they are not moved to a layer provided on the aluminum oxide film. Or, even if gases such as oxygen or hydrogen exist from a layer provided on the aluminum oxide film, they are not moved to a layer provided under the aluminum oxide film. In this embodiment, the aluminum oxide used as the metal oxide film 130 blocks hydrogen and oxygen released from the gate insulating film 120 and suppresses the released hydrogen and oxygen from reaching the oxide semiconductor layer.

[0042] 3 and 6, an oxide semiconductor film 140 is formed on a metal oxide film 130 (Step S1003 “OS film formation” shown in FIG. 3). This step may be referred to as forming the oxide semiconductor film 140 on a substrate 100.

[0043] The oxide semiconductor film 140 is formed by sputtering or atomic layer deposition (ALD). The oxide semiconductor film 140 has a thickness of, for example, more than 10 nm and not more than 30 nm.

[0044] The oxide semiconductor film 140 may be made of a metal oxide having semiconductor properties. For example, an oxide semiconductor containing two or more metals including an indium (In) element is used as the oxide semiconductor film 140. The ratio of the indium element to the two or more metals is 50% or more. In addition to the indium element, the oxide semiconductor film 140 may be made of a gallium (Ga) element, a zinc (Zn) element, an aluminum (Al) element, a hafnium (Hf) element, an yttrium (Y) element, a zirconium (Zr) element, or a lanthanoid element. The oxide semiconductor film 140 preferably contains a group 13 element. In addition, the oxide semiconductor film 140 may be made of an element other than the above. In this embodiment, the oxide semiconductor film 140 is preferably an IGO-based oxide semiconductor.

[0045] When the oxide semiconductor film 140 is crystallized by OS annealing described later, the oxide semiconductor film 140 is preferably amorphous (a state in which the oxide semiconductor has few crystalline components) after deposition and before OS annealing. In other words, the oxide semiconductor film 140 is preferably formed under conditions that prevent the oxide semiconductor film 140 from crystallizing immediately after deposition as much as possible. For example, when the oxide semiconductor film 140 is formed by a sputtering method, the oxide semiconductor film 140 is formed while controlling the temperature of an object to be formed (the substrate 100 and a structure formed thereon).

[0046] When a film is formed on a target object by sputtering, ions generated in the plasma and atoms recoiled by the sputtering target collide with the target object, and the temperature of the target object increases with the film formation process. When the temperature of the target object increases during the film formation process, the oxide semiconductor film 140 contains microcrystals immediately after the film formation. When the oxide semiconductor film 140 contains microcrystals, the crystal grain size cannot be increased by the subsequent OS annealing. In order to control the temperature of the target object as described above, for example, the target object can be cooled while the film is formed. For example, the target object can be cooled from the surface opposite to the surface to be formed so that the temperature of the surface to be formed of the target object (hereinafter referred to as the "film formation temperature") is 100°C or less, 70°C or less, 50°C or less, or 30°C or less. In particular, the film formation temperature of the oxide semiconductor film 140 of this embodiment is preferably 50°C or less. By forming the oxide semiconductor film 140 while cooling the substrate, it is possible to obtain an oxide semiconductor film 140 having few crystalline components immediately after the film formation. In this embodiment, the oxide semiconductor film 140 is formed at a film formation temperature of 50° C. or less, and the OS annealing described below is performed at a heating temperature of 400° C. or more. Thus, in this embodiment, the difference between the temperature when the oxide semiconductor film 140 is formed and the temperature when the OS annealing is performed on the oxide semiconductor film 140 is preferably 350° C. or more.

[0047] In the sputtering process, the amorphous oxide semiconductor film 140 is formed under conditions of an oxygen partial pressure of 10% or less. If the oxygen partial pressure is high, the oxide semiconductor film 140 contains excess oxygen, causing microcrystals to be included in the oxide semiconductor film 140 immediately after the film formation. Therefore, it is preferable to form the oxide semiconductor film 140 under conditions of a low oxygen partial pressure. The oxygen partial pressure is, for example, 3% or more and 5% or less, and preferably 3% or more and 4% or less. Note that when the oxide semiconductor film is formed under conditions of an oxygen partial pressure of 2%, the oxide semiconductor film is not crystallized even if an OS annealing process is subsequently performed.

[0048] As shown in FIG. 3 and FIG. 7, a pattern of the oxide semiconductor layer 142 is formed ("OS pattern formation" in step S1004 shown in FIG. 3). Although not shown, a resist mask 143 is formed on the oxide semiconductor film 140, and the oxide semiconductor film 140 is etched using the resist mask 143. As the etching of the oxide semiconductor film 140, wet etching or dry etching may be used. As the wet etching, etching can be performed using an acidic etchant. As the etchant, for example, oxalic acid, PAN, sulfuric acid, hydrogen peroxide solution, or hydrofluoric acid can be used. In this way, a patterned oxide semiconductor layer 142 can be formed. Thereafter, the resist mask 143 is removed.

[0049] It is preferable that the oxide semiconductor film 140 be patterned before the OS annealing. When the oxide semiconductor film 140 is crystallized by the OS annealing, it tends to be difficult to etch. In addition, even if the patterned oxide semiconductor layer 142 is damaged by etching, the damage to the oxide semiconductor layer 142 can be repaired by the OS annealing, which is preferable.

[0050] As shown in FIGS. 3 and 8, after the oxide semiconductor layer 142 is patterned, a heat treatment (OS annealing) is performed on the oxide semiconductor layer 142 ("OS annealing" in step S1005 shown in FIG. 3). In the OS annealing, the oxide semiconductor layer 142 is held at a predetermined target temperature for a predetermined time. The predetermined target temperature is 300° C. or more and 500° C. or less, and preferably 350° C. or more and 450° C. or less. The holding time at the target temperature is 15 minutes or more and 120 minutes or less, and preferably 30 minutes or more and 60 minutes or less. By performing the OS annealing, the oxide semiconductor layer 142 is crystallized, and an oxide semiconductor layer 144 having a polycrystalline structure is formed.

[0051] In a thin film transistor, the field effect mobility tends to be increased by reducing the thickness of the oxide semiconductor layer, which increases carriers near the interface with the gate insulating film and reduces the influence of the back channel. That is, in a thin film transistor, the field effect mobility tends to be increased as the thickness of a region of the oxide semiconductor layer that functions as a channel is reduced. Therefore, the smaller the thickness of the oxide semiconductor layer, the better. However, even if the oxide semiconductor layer is formed to a thickness of 10 nm or less and then subjected to heat treatment, the oxide semiconductor layer is not sufficiently crystallized. If the oxide semiconductor layer is not sufficiently crystallized, the oxide semiconductor layer and the metal oxide film are lost during a later etching treatment for patterning the metal oxide film using the oxide semiconductor layer as a mask.

[0052] In addition, in a thin film transistor, the crystallinity of the oxide semiconductor layer 144 contributes to improving the field-effect mobility. Therefore, it is preferable that the oxide semiconductor layer 144 has a polycrystalline structure. However, if microcrystals are contained during the formation of the oxide semiconductor film 140, the crystal grain size of the polycrystalline structure cannot be increased even if a heat treatment is subsequently performed. Thus, it is difficult to achieve both a thin oxide semiconductor layer and good crystallization.

[0053] Furthermore, when a large number of oxygen vacancies or hydrogen exist in the oxide semiconductor layer 144 near the interface with the metal oxide layer 132, the density of interface states increases. When electrons are trapped in the interface states, a transistor deteriorates due to a reliability test, which is a factor of reducing the reliability of the semiconductor device.

[0054] According to the method for manufacturing a semiconductor device according to an embodiment of the present invention, the oxide semiconductor film 140 is formed by sputtering at a low oxygen partial pressure of 3% or more and 5% or less. By forming the oxide semiconductor film 140 under the condition of a low oxygen partial pressure, it is possible to prevent the oxide semiconductor film 140 from containing excessive oxygen, and to prevent the oxide semiconductor film 140 immediately after the film formation from containing microcrystals. This makes it possible to prevent crystals from growing from the microcrystals during the heat treatment of the oxide semiconductor layer 142. Therefore, even if the oxide semiconductor film 140 is formed to a small thickness of more than 10 nm and not more than 30 nm, it is possible to increase the crystal grain size of the crystal grains of the polycrystalline structure of the oxide semiconductor layer 144.

[0055] As shown in FIG. 3 and FIG. 9, the metal oxide film 130 is patterned to form the metal oxide layer 132 (step S1006 "MO pattern formation" in FIG. 4). The oxide semiconductor layer 144 sufficiently crystallized by the heat treatment has etching resistance. Therefore, when the metal oxide film 130 is patterned using the crystallized oxide semiconductor layer 144 as a mask, it is possible to suppress the oxide semiconductor layer 144 from disappearing. The metal oxide layer 130 is etched using the oxide semiconductor layer 140 patterned in the above process as a mask. For etching the metal oxide film 130, wet etching may be used or dry etching may be used. For example, diluted hydrofluoric acid (DHF) is used for wet etching. By etching the metal oxide film 130 using the oxide semiconductor layer 144 as a mask, the photolithography process can be omitted.

[0056] As shown in FIGS. 3 and 10, a gate insulating film 150 is formed on the oxide semiconductor layer 144 ("GI film formation" in step S1007 shown in FIG. 3).

[0057] For the method of forming the gate insulating film 150 and the insulating material, refer to the description of the gate insulating films 110 and 120. The thickness of the gate insulating film 150 is, for example, 50 nm to 300 nm, 60 nm to 200 nm, or 70 nm to 150 nm.

[0058] It is preferable to use an insulating material containing oxygen as the gate insulating film 150. It is also preferable to use an insulating film with few defects as the gate insulating film 150. For example, when the oxygen composition ratio in the gate insulating film 150 is compared with the oxygen composition ratio in an insulating film having the same composition as the gate insulating film 150 (hereinafter referred to as "another insulating film"), the oxygen composition ratio in the gate insulating film 150 is closer to the stoichiometric ratio for the insulating film than the oxygen composition ratio in the other insulating film. For example, when silicon oxide (SiO x ), the composition ratio of oxygen in the silicon oxide used as the gate insulating film 150 is closer to the stoichiometric ratio of silicon oxide than the composition ratio of oxygen in the silicon oxide used as the insulating film 180. For example, the gate insulating film 150 may be a layer in which no defects are observed when evaluated by electron spin resonance (ESR).

[0059] In order to form an insulating film with few defects as the gate insulating film 150, the gate insulating film 150 may be formed at a film formation temperature of 350° C. or higher. In addition, after forming the gate insulating film 150, a process of implanting oxygen into a part of the gate insulating film 150 may be performed. In this embodiment, in order to form an insulating film with few defects as the gate insulating film 150, silicon oxide is formed at a film formation temperature of 350° C. or higher.

[0060] With the gate insulating film 150 formed on the oxide semiconductor layer 144, a heat treatment (oxidation annealing) is performed to supply oxygen to the oxide semiconductor layer 144 ("oxidation annealing" in step S1008 shown in FIG. 3).

[0061] Oxygen released from the gate insulating film 120 by the oxidation annealing is blocked by the metal oxide layer 132, so that oxygen is not easily supplied to the lower surface of the oxide semiconductor layer 144. Oxygen released from the gate insulating film 120 diffuses from a region where the metal oxide layer 132 is not formed to the gate insulating film 150 provided on the gate insulating film 120, and reaches the oxide semiconductor layer 144 through the gate insulating film 150. As a result, oxygen released from the gate insulating film 120 is not easily supplied to the lower surface of the oxide semiconductor layer 144, but is mainly supplied to the side and upper surface of the oxide semiconductor layer 144. Furthermore, oxygen released from the gate insulating film 150 by the oxidation annealing is supplied to the upper surface and side surface of the oxide semiconductor layer 144. Hydrogen may be released from the gate insulating films 110 and 120 by the above oxidation annealing, but the hydrogen is blocked by the metal oxide layer 132.

[0062] During the process from when the oxide semiconductor layer 144 is formed until when the gate insulating film 150 is formed on the oxide semiconductor layer 144, many oxygen defects are generated on the upper surface and side surface of the oxide semiconductor layer 144. By the above-mentioned oxidation annealing, oxygen released from the gate insulating film 120 is supplied to the upper surface and side surface of the oxide semiconductor layer 144, and the oxygen defects are repaired.

[0063] Next, as shown in FIGS. 3 and 11, a gate electrode 160 is formed on the gate insulating film 150 ("Top GE formation" in step S1009 shown in FIG. 3).

[0064] The gate electrode 160 is formed by processing a conductive film formed by a sputtering method. As the gate electrode 160, a general metal material is used, similar to the gate electrode 105. For materials that can be used for the gate electrode 160, refer to the description of the material of the gate electrode 105. As the gate electrode 160, the above materials may be used in a single layer or a stacked layer.

[0065] 3 and 12, impurities are added to the oxide semiconductor layer 144 using the gate electrode 160 as a mask ("SD resistance reduction" in step S1010 shown in FIG. 3). In this embodiment, the case where the impurities are added by ion implantation will be described, but the addition may be performed by ion doping.

[0066] Specifically, impurity elements are added to the source region 144S and the drain region 144D by ion implantation through the gate insulating film 150. For example, argon (Ar), phosphorus (P), or boron (B) may be used as the impurity element. When boron (B) is added by ion implantation, the acceleration energy is set to 20 keV or more and 40 keV or less, and the amount of boron (B) implanted is set to 1×10 14 cm -2 More than 1×10 16 cm -2 The following would suffice.

[0067] The source region 144S and the drain region 144D are doped with an impurity element of 1×10 18 cm -3 More than 1×10 21 cm -3 The impurity element can be added at the following concentration. At this time, oxygen defects are formed in the oxide semiconductor in the source region 144S and the drain region 144D by adding the impurity element. Hydrogen is easily trapped in the oxygen defects. This reduces the resistivity of the source region 144S and the drain region 144D, allowing them to function as conductors.

[0068] For example, when an IGZO-based oxide semiconductor layer is used, the resistance of the oxide semiconductor layer is high, and therefore the resistance of the source region and the drain region cannot be sufficiently reduced unless the film thickness is increased. In contrast, in the oxide semiconductor layer 144 having a polycrystalline structure, impurity elements are added to the source region 144S and the drain region 144D, so that the sheet resistance of the source region 144S and the drain region 144D can be set to 1000 Ω / sq. or less, preferably 500 Ω / sq. or less, and more preferably 250 Ω / sq.

[0069] As shown in FIGS. 3 and 13, insulating films 170 and 180 are formed as interlayer films on the gate insulating film 150 and the gate electrode 160 ("interlayer film formation" in step S1011 shown in FIG. 3).

[0070] For the film formation method and insulating material of the insulating films 170 and 180, refer to the description of the materials of the gate insulating films 110 and 120. The film thickness of the insulating film 170 is 50 nm or more and 500 nm or less. The film thickness of the insulating film 180 is 50 nm or more and 500 nm or less. In this embodiment, for example, silicon oxide is formed as the insulating film 170, and silicon nitride is formed as the insulating film 180.

[0071] 3 and 14, openings 171 and 173 are formed in the gate insulating film 150 and the insulating films 170 and 180 ("contact hole" in step S1012 shown in FIG. 3). The opening 171 exposes the oxide semiconductor layer 144 in the source region 144S. The opening 173 exposes the oxide semiconductor layer 144 in the drain region 144D.

[0072] Finally, by forming a source electrode and a drain electrode 200 on the oxide semiconductor layer 144 exposed by the openings 171, 173 and on the insulating film 180 ("SD formation" in step S1013 shown in FIG. 3), the semiconductor device 10 shown in FIG. 1 can be formed.

[0073] The source and drain electrodes 200 are formed by processing a conductive film formed by, for example, a sputtering method. As the source and drain electrodes 200, a general metal material is used, similar to the gate electrode 105. For materials that can be used for the source and drain electrodes 200, refer to the description of the gate electrode 105. As the source and drain electrodes 200, the above materials may be used in a single layer or a stacked layer.

[0074] Through the above steps, the semiconductor device 10 shown in FIG. 1 can be manufactured.

[0075] In the semiconductor device 10 manufactured by the above manufacturing method, when the channel length L of the channel region 144CH is in the range of 2 μm to 4 μm and the channel width of the channel region 144CH is in the range of 2 μm to 25 μm, the mobility is 30 cm 2 / Vs or more, 35cm 2 / Vs or more, or 40cm 2 In this specification, the mobility means the field effect mobility in the saturation region of the semiconductor device 10, and refers to the maximum value of the field effect mobility in a region where the potential difference (Vd) between the source electrode and the drain electrode is greater than the voltage (Vg) supplied to the gate electrode minus the threshold voltage (Vth) of the semiconductor device 10 (Vg-Vth).

[0076] Here, the reliability test refers to, for example, a negative gate bias-temperature (NGBT) stress test in which a negative voltage is applied to the gate, or a positive gate bias-temperature (PGBT) stress test in which a positive voltage is applied to the gate. Note that BT stress tests such as NGBT and PGBT are types of accelerated tests, and can evaluate in a short time the characteristic changes (aging) of a transistor that occur due to long-term use. In particular, the amount of change in the threshold voltage of a transistor before and after a BT stress test is an important index for investigating reliability. The smaller the amount of change in threshold voltage before and after a BT stress test, the more reliable the transistor is.

[0077] Moreover, by reducing the thickness of the oxide semiconductor layer 144, the ΔL length can be reduced. In this embodiment, hydrogen is implanted into the oxide semiconductor layer 144 using the gate electrode 160 as a mask. At this time, in the oxide semiconductor layer 144, a region where hydrogen has penetrated into the channel region 144CH may be generated with reference to the end of the gate electrode 160. The ΔL length refers to the length in the channel length L direction of the region where hydrogen has penetrated into the channel region 144CH. When the oxide semiconductor layer 144 is thin as in this embodiment, hydrogen is implanted into the gate insulating layer 120 side through the oxide semiconductor layer 144 during ion implantation. This suppresses the diffusion of hydrogen into the channel region 144CH, and it is considered that the ΔL length can be reduced.

[0078] Second Embodiment In this embodiment, a manufacturing method different from the manufacturing method of the semiconductor device 10 described in the first embodiment will be described. Note that the structure of the semiconductor device 10 of this embodiment is the same in appearance as the semiconductor device 10 described in the first embodiment. In this embodiment, the differences from the first embodiment will be focused on.

[0079] [Method of Manufacturing Semiconductor Device 10] A method for manufacturing the semiconductor device 10 according to one embodiment of the present invention will be described with reference to Fig. 15 and Fig. 16. Fig. 15 is a sequence diagram showing a method for manufacturing the semiconductor device 10 according to one embodiment of the present invention. Fig. 16 is a cross-sectional view showing a method for manufacturing the semiconductor device 10 according to one embodiment of the present invention. Also, detailed description of the same steps as those in the first embodiment will be omitted.

[0080] 15 is a sequence diagram showing a method for manufacturing the semiconductor device 10 according to one embodiment of the present invention. As shown in FIG 15, steps S1001 to S1007 are similar to steps S1001 to S1007 shown in FIG 3.

[0081] In this embodiment, as shown in FIGS. 15 and 16, after the process of step S1007, a metal oxide film 190 containing aluminum as a main component is formed on the gate insulating film 150 (step S1014 “MO film formation” shown in FIG. 15).

[0082] The metal oxide film 190 is formed by a sputtering method. By forming the metal oxide film 190, oxygen is implanted into the gate insulating film 150. The metal oxide film 190 containing aluminum as a main component is an inorganic insulating film similar to the metal oxide film 130 described in the first embodiment. The ratio of aluminum contained in the metal oxide film 190 may be 5% to 70%, 10% to 60%, or 30% to 50% of the entire metal oxide film 190. The above ratio may be a mass ratio or a weight ratio.

[0083] The thickness of the metal oxide film 190 is, for example, 5 nm to 100 nm, 5 nm to 50 nm, 5 nm to 30 nm, or 7 nm to 15 nm. In this embodiment, aluminum oxide is used as the metal oxide film 190. Aluminum oxide has high barrier properties against gas. In this embodiment, aluminum oxide used as the metal oxide film 190 suppresses outward diffusion of oxygen implanted into the gate insulating film 150 during deposition of the metal oxide film 190.

[0084] For example, when the metal oxide film 190 is formed by a sputtering method, the process gas used in the sputtering remains in the metal oxide film 190. For example, when Ar is used as the process gas for the sputtering, Ar may remain in the metal oxide film 190. The remaining Ar can be detected by SIMS (Secondary Ion Mass Spectrometry) analysis of the metal oxide film 190.

[0085] 15, in a state where the metal oxide film 190 is formed on the gate insulating film 150, a heat treatment (oxidation annealing) is performed to supply oxygen to the oxide semiconductor layer 144 ("oxidation annealing" in step S2008 of FIG. 22). In the process from when the oxide semiconductor film 140 is formed until when the gate insulating film 150 is formed on the oxide semiconductor layer 144, many oxygen defects are generated on the upper surface 141 and side surfaces of the oxide semiconductor layer 144. By the above-mentioned oxidation annealing, oxygen released from the gate insulating films 120 and 150 is supplied to the oxide semiconductor layer 144, and the oxygen defects are repaired.

[0086] Oxygen released from the gate insulating film 120 by the oxidation annealing is blocked by the metal oxide layer 132, so that oxygen is not easily supplied to the lower surface of the oxide semiconductor layer 144. Oxygen released from the gate insulating film 120 diffuses from a region where the metal oxide layer 132 is not formed to the gate insulating film 150 provided on the gate insulating film 120, and reaches the oxide semiconductor layer 144 through the gate insulating film 150. As a result, oxygen released from the gate insulating film 120 is not easily supplied to the lower surface of the oxide semiconductor layer 144, but is mainly supplied to the side and upper surface of the oxide semiconductor layer 144. Furthermore, oxygen released from the gate insulating film 150 by the oxidation annealing is supplied to the upper surface and side surface of the oxide semiconductor layer 144. Hydrogen may be released from the gate insulating films 110 and 120 by the above oxidation annealing, but the hydrogen is blocked by the metal oxide layer 132.

[0087] As described above, the oxidation annealing process can suppress the supply of oxygen to the underside of the oxide semiconductor layer 144, which has a small amount of oxygen defects, while supplying oxygen to the upper surface 141 and side surfaces of the oxide semiconductor layer 144, which has a large amount of oxygen defects.

[0088] Similarly, in the above-described oxidation annealing, oxygen implanted into the gate insulating film 150 is blocked by the metal oxide film 190, and is therefore prevented from being released into the atmosphere. Therefore, the oxygen is efficiently supplied to the oxide semiconductor layer 144 by the oxidation annealing, and oxygen defects are repaired.

[0089] Next, after the oxidation annealing, the metal oxide film 190 is etched (removed) ("MO removal" in step S1015 shown in FIG. 15). Wet etching or dry etching may be used for etching the metal oxide film 190. For example, diluted hydrofluoric acid (DHF) is used for wet etching. The metal oxide film 190 formed on the entire surface is removed by this etching. In other words, the metal oxide film 190 is removed without using a mask. In further other words, the etching removes all of the metal oxide film 190 in a region overlapping with the oxide semiconductor layer 144 formed in a certain pattern, at least in a plan view.

[0090] Thereafter, the gate electrode 160 is formed on the gate insulating film 150 (Step S1009 "Top GE formation" shown in FIG. 15). The processes shown in Steps S1009 to S1013 are similar to Steps S1009 to S1013 shown in FIG. 3, and therefore the description thereof will be omitted. By going through Steps S1009 to S1013, the semiconductor device 10 shown in FIG. 15 can be formed.

[0091] In the semiconductor device 10 manufactured by the above manufacturing method, oxygen defects contained in the oxide semiconductor layer 144 can be further reduced compared to the manufacturing method of the semiconductor device 10 described in the first embodiment. Therefore, in the semiconductor device 10 described in this embodiment, when the channel length L of the channel region 144CH is in the range of 2 μm to 4 μm and the channel width of the channel region 144CH is in the range of 2 μm to 25 μm, the mobility is 50 cm 2 / Vs or more, 55cm 2 / Vs or more, or 60cm 2 Electrical characteristics of at least / Vs can be obtained.

[0092] In this specification, plasma treatment refers to a treatment in which a substrate to be treated is exposed to plasma by generating plasma in a space in which the substrate is placed. The plasma treatment is performed, for example, by reverse sputtering using a sputtering device or etching using an inductively coupled plasma (ICP) device.

[0093] Reverse sputtering is a process in which, without applying a voltage to the target side, a voltage is applied to the substrate side using an RF power source in an argon atmosphere to form plasma in the vicinity of the substrate, and ions are collided with the surface of the substrate to modify the surface. When performing plasma processing by reverse sputtering, for example, before forming the oxide semiconductor film 140 by a sputtering method, argon gas is introduced into a chamber to generate plasma. Etching by inductively coupled plasma is a process in which the surface of the substrate is modified by ions and radicals present in the plasma.

[0094] The plasma treatment is performed on the metal oxide film 130, thereby modifying the surface of the metal oxide film 130. Here, modifying the surface means that the chemical composition of the surface of the metal oxide film 130 is changed, or the surface roughness of the metal oxide film 130 is reduced.

[0095] The state of the metal oxide film 130 whose surface has been modified can be confirmed by the magnitude of the water contact angle of the surface. By performing a plasma treatment on the surface of the metal oxide film 130, the water contact angle of the metal oxide film 130 decreases. The water contact angle on the surface of the metal oxide film 130 after the plasma treatment is 20° or less, preferably 15° or less, and more preferably 10° or less. In this specification and the like, the value measured in accordance with ISO19403-2:2017 is adopted as the water contact angle. When the metal oxide film 130 is subjected to the plasma treatment by reverse sputtering, the water contact angle is 20° or less. When the metal oxide film 130 is subjected to etching by inductively coupled plasma, the water contact angle is 15° or less. The lower limit of the measurement of the water contact angle is 2°.

[0096] The plasma treatment may remove the surface of the metal oxide film 130. The amount of the surface of the metal oxide film 130 that is removed is, for example, not less than 1 nm and not more than 10 nm, or not less than 1 nm and not more than 5 nm.

[0097] Furthermore, the plasma treatment may reduce the surface roughness of the metal oxide film 130. The surface roughness (e.g., arithmetic mean roughness (Ra)) of the metal oxide film 130 can be, for example, 1 nm or less. The surface roughness can be evaluated using an atomic force microscope (AFM).

[0098] In this modification, the surface of the metal oxide film 130 is modified. An oxide semiconductor film 140 having a small amount of crystalline components is formed on the modified surface of the metal oxide film 130. Then, OS annealing is performed on the patterned oxide semiconductor layer 142, so that it is possible to suppress the crystallization of the oxide semiconductor layer 142 from being hindered by hydroxyl groups or water at the interface between the metal oxide film 130 and the oxide semiconductor layer 144 when the oxide semiconductor layer 142 is crystallized. That is, it is possible to further reduce the interface state density at the interface between the metal oxide film 130 and the oxide semiconductor layer 144. This can further improve the reliability of the semiconductor device 10.

[0099] Third embodiment 17 to 20, a display device 20 using a semiconductor device 10 according to one embodiment of the present invention will be described. In the embodiment shown below, a configuration in which the semiconductor device 10 described in the first embodiment is applied to the circuitry of a liquid crystal display device will be described.

[0100] [Outline of the display device 20] Fig. 17 is a plan view showing an overview of a display device 20 according to an embodiment of the present invention. As shown in Fig. 17, the display device 20 has an array substrate 300, a seal portion 310, a counter substrate 320, a flexible printed circuit board 330 (FPC 330), and an IC chip 340. The array substrate 300 and the counter substrate 320 are bonded together by the seal portion 310. In a liquid crystal region 22 surrounded by the seal portion 310, a plurality of pixel circuits 301 are arranged in a matrix. The liquid crystal region 22 is an area that overlaps with a liquid crystal element 311 described later in a plan view.

[0101] The seal area 24 in which the seal portion 310 is provided is the area surrounding the liquid crystal area 22. The FPC 330 is provided in the terminal area 26. The terminal area 26 is an area in which the array substrate 300 is exposed from the counter substrate 320, and is provided outside the seal area 24. The outside of the seal area 24 means the outside of the area in which the seal portion 310 is provided and the area surrounded by the seal portion 310. The IC chip 340 is provided on the FPC 330. The IC chip 340 supplies signals for driving each pixel circuit 301.

[0102] [Circuit configuration of display device 20] Fig. 18 is a block diagram showing a circuit configuration of a display device 20 according to one embodiment of the present invention. As shown in Fig. 18, a source driver circuit 302 is provided at a position adjacent to the liquid crystal region 22 in which the pixel circuits 301 are arranged in the second direction D2 (column direction), and a gate driver circuit 303 is provided at a position adjacent to the liquid crystal region 22 in the first direction D1 (row direction). The source driver circuit 302 and the gate driver circuit 303 are provided in the above-mentioned sealing region 24. However, the region in which the source driver circuit 302 and the gate driver circuit 303 are provided is not limited to the sealing region 24, and may be any region outside the region in which the pixel circuits 301 are provided.

[0103] A source line 304 extends from the source driver circuit 302 in the second direction D2 and is connected to the plurality of pixel circuits 301 arranged in the second direction D2. A gate electrode 160 extends from the gate driver circuit 303 in the first direction D1 and is connected to the plurality of pixel circuits 301 arranged in the first direction D1.

[0104] A terminal portion 306 is provided in the terminal region 26. The terminal portion 306 and the source driver circuit 302 are connected by a connection wiring 307. Similarly, the terminal portion 306 and the gate driver circuit 303 are connected by a connection wiring 307. By connecting the FPC 330 to the terminal portion 306, an external device to which the FPC 330 is connected is connected to the display device 20, and each pixel circuit 301 provided in the display device 20 is driven by a signal from the external device.

[0105] The semiconductor device 10 according to the first and second embodiments is used as a transistor included in a pixel circuit 301, a source driver circuit 302, and a gate driver circuit 303.

[0106] [Pixel circuit 301 of display device 20] FIG. 19 is a circuit diagram showing a pixel circuit of a display device 20 according to an embodiment of the present invention. As shown in FIG. 19, a pixel circuit 301 includes elements such as a semiconductor device 10, a storage capacitor 350, and a liquid crystal element 311. The semiconductor device 10 has a gate electrode 160, a source electrode 201, and a drain electrode 203. The gate electrode 160 is connected to the gate electrode 160. The source electrode 201 is connected to a source wiring 304. The drain electrode 203 is connected to the storage capacitor 350 and the liquid crystal element 311. In this embodiment, for convenience of explanation, the electrode indicated by the reference numeral "201" is referred to as a source electrode, and the electrode indicated by the reference numeral "203" is referred to as a drain electrode, but the electrode indicated by the reference numeral "201" may function as a drain electrode, and the electrode indicated by the reference numeral "203" may function as a source electrode.

[0107] [Configuration of display device 20] Fig. 20 is a cross-sectional view of a display device 20 according to one embodiment of the present invention. As shown in Fig. 20, the display device 20 is a display device 20 to which the semiconductor device 10 is applied.

[0108] As shown in FIG. 20 and FIG. 21, a gate electrode 105 is provided on a substrate 100. The gate electrode 105 is in a floating state. For the material of the gate electrode 105, refer to the description of the source electrode 201 and the drain electrode 203. An oxide semiconductor layer 144 is provided on the gate electrode 105. A gate electrode 160 extends along a first direction D1 on the oxide semiconductor layer 144. A region of the gate electrode 160 that overlaps with the oxide semiconductor layer 144 functions as the gate electrode 160. A source wiring 304 and a drain electrode 203 are provided on the gate electrode 160. The source wiring 304 is connected to the source region 144S through an opening 171. A region of the source wiring 304 that is connected to the oxide semiconductor layer 144 functions as the source electrode 201. The drain electrode 203 is connected to the drain region 144D through an opening 173.

[0109] An insulating film 360 is provided on the source electrode 201 and the drain electrode 203. A common electrode 370 that is provided in common to a plurality of pixels is provided on the insulating film 360. An insulating film 380 is provided on the common electrode 370. An opening 381 is provided in the insulating films 360 and 380. A pixel electrode 390 is provided on the insulating film 380 and inside the opening 381. The pixel electrode 390 is connected to the drain electrode 203.

[0110] Fig. 21 is a plan view of a pixel electrode 390 and a common electrode 370 of a display device 20 according to an embodiment of the present invention. As shown in Fig. 21, the common electrode 370 has an overlapping region that overlaps with the pixel electrode 390 in a planar view, and a non-overlapping region that does not overlap with the pixel electrode 390. When a voltage is supplied between the pixel electrode 390 and the common electrode 370, a lateral electric field is formed from the pixel electrode 390 in the overlapping region to the common electrode 370 in the non-overlapping region. This lateral electric field causes liquid crystal molecules contained in the liquid crystal element 311 to operate, thereby determining the grayscale of the pixel.

[0111] In this embodiment, a configuration in which the semiconductor device 10 is used in the pixel circuit 301 is illustrated as an example, but the semiconductor device 10 may also be used in a peripheral circuit including a source driver circuit 302 and a gate driver circuit 303.

[0112] Fourth embodiment A display device 20 using the semiconductor device 10 according to one embodiment of the present invention will be described with reference to Figures 22 and 23. In this embodiment, a configuration in which the semiconductor device 10 described in the first embodiment is applied to the circuit of an organic EL display device will be described. The outline and circuit configuration of the display device 20 are similar to those shown in Figures 22 and 23, and therefore description thereof will be omitted.

[0113] [Pixel circuit 301 of display device 20] FIG. 22 is a circuit diagram showing a pixel circuit of a display device 20 according to an embodiment of the present invention. As shown in FIG. 22, a pixel circuit 301 includes elements such as a driving transistor 11, a selection transistor 12, a storage capacitor 210, and a light-emitting element DO. The driving transistor 11 and the selection transistor 12 have the same configuration as the semiconductor device 10. The source electrode of the selection transistor 12 is connected to a signal line 211, and the gate electrode of the selection transistor 12 is connected to a gate line 212. The source electrode of the driving transistor 11 is connected to an anode power line 213, and the drain electrode of the driving transistor 11 is connected to one end of the light-emitting element DO. The other end of the light-emitting element DO is connected to a cathode power line 214. The gate electrode of the driving transistor 11 is connected to the drain electrode of the selection transistor 12. The storage capacitor 210 is connected to the gate electrode and drain electrode of the driving transistor 11. A grayscale signal that determines the light-emitting intensity of the light-emitting element DO is supplied to the signal line 211. A signal that selects a pixel row to which the above grayscale signal is written is supplied to the gate line 212.

[0114] [Cross-sectional structure of the display device 20] Fig. 23 is a cross-sectional view of a display device 20 according to one embodiment of the present invention. The configuration of the display device 20 shown in Fig. 23 is similar to that of the display device 20 shown in Fig. 19, but the structure above the insulating film 360 of the display device 20 in Fig. 23 is different from the structure above the insulating film 360 of the display device 20 in Fig. 19. Hereinafter, a description of the configuration of the display device 20 shown in Fig. 23 that is similar to that of the display device 20 shown in Fig. 19 will be omitted, and differences between the two will be described.

[0115] As shown in FIG. 23, the display device 20 has a pixel electrode 390, a light-emitting layer 392, and a common electrode 394 (light-emitting element DO) above an insulating film 360. The pixel electrode 390 is provided on the insulating film 360 and inside an opening 381. An insulating film 362 is provided on the pixel electrode 390. An opening 363 is provided in the insulating film 362. The opening 363 corresponds to a light-emitting region. In other words, the insulating film 362 defines a pixel. The light-emitting layer 392 and the common electrode 394 are provided on the pixel electrode 390 exposed by the opening 363. The pixel electrode 390 and the light-emitting layer 392 are provided individually for each pixel. On the other hand, the common electrode 394 is provided in common to a plurality of pixels. The light-emitting layer 392 is made of different materials depending on the display color of the pixel.

[0116] In the third and fourth embodiments, the semiconductor device described in the first embodiment is applied to a liquid crystal display device and an organic EL display device, but the semiconductor device may be applied to a display device other than these display devices (for example, a self-luminous display device other than an organic EL display device or an electronic paper display device). In addition, the semiconductor device 10 can be applied to a variety of display devices, from small and medium-sized display devices to large display devices, without any particular limitations. EXAMPLES

[0117] Example 1 In this example, the results of verifying the etching resistance of the oxide semiconductor film 140 will be described.

[0118] In this example, the semiconductor device 10 was manufactured according to the sequence shown in FIG. 15 of the second embodiment, and then the surface of the semiconductor device was photographed with an optical microscope to confirm the presence or absence of the oxide semiconductor layer 144.

[0119] In this example, in step S1002 shown in Fig. 15, an aluminum oxide film with a thickness of 10 nm was formed as the metal oxide film 130. Next, in step S1003 shown in Fig. 15, an oxide semiconductor film 140 was formed by using an IGO-based sputtering target and setting the substrate temperature to 100°C or lower. Various conditions were set for the oxygen partial pressure and the thickness of the oxide semiconductor film.

[0120] When the oxygen partial pressure was 2%, the thickness of the oxide semiconductor film was set to 20 nm, 30 nm, and 40 nm. When the oxygen partial pressure was 4%, the thickness of the oxide semiconductor film was set to 20 nm, 30 nm, and 40 nm. When the oxygen partial pressure was 5%, the thickness was set to 30 nm.

[0121] 15, the oxide semiconductor film 140 was etched with oxalic acid using a resist mask. In step S1005 shown in FIG 15, OS annealing was performed. Then, in step S1006 shown in FIG 15, the metal oxide film 130 was etched with DHF using the oxide semiconductor layer 144 as a mask. After that, the semiconductor device 10 was manufactured according to the sequence shown in FIG 15.

[0122] After the process of step S1013 shown in Fig. 15 was completed, a photograph of the surface of the semiconductor device was taken with an optical microscope. Fig. 24 is a photograph of the surface of the semiconductor device taken with an optical microscope.

[0123] 24, when the oxygen partial pressure was 2%, the oxide semiconductor layer disappeared during the etching process in all cases where the film thickness was 20 nm, 30 nm, and 40 nm. When the oxygen partial pressure was 4% and when the oxygen partial pressure was 5%, the oxide semiconductor layer remained without disappearing.

[0124] When the oxygen partial pressure is 2%, it is considered that the oxide semiconductor film cannot be sufficiently crystallized even when heat treatment is performed after the formation of the oxide semiconductor film, and therefore, the oxide semiconductor layer is also lost when the metal oxide film 130 is etched. On the other hand, when the oxygen partial pressure is 3% or more, it is considered that the oxide semiconductor layer is sufficiently crystallized by the heat treatment after the formation of the oxide semiconductor film, and therefore, the oxide semiconductor layer remains.

[0125] Example 2 Next, the results of verifying the electrical characteristics of the semiconductor device 10 manufactured according to the sequence shown in FIG. 3 of the first embodiment will be described.

[0126] 3, an IGO-based sputtering target was used to deposit the oxide semiconductor film 140 at a substrate temperature of 100° C. or lower. Various conditions were set for the oxygen partial pressure and the thickness of the oxide semiconductor film.

[0127] When the oxygen partial pressure was 5%, the thickness of the oxide semiconductor film was varied to 10 nm, 20 nm, and 30 nm.

[0128] 3, the oxide semiconductor film 140 was etched using a resist mask. In step S1005 shown in Fig. 3, OS annealing was performed. After that, the semiconductor device 10 was manufactured according to the sequence shown in Fig. 3.

[0129] Next, the electrical characteristics of the semiconductor device 10 were measured under the following conditions. Channel area size: W / L=4.5μm / 3μm Source-drain voltage: 0.1V, 10V Gate voltage: -15V~+15V Measurement environment: Room temperature, dark room -Thickness of oxide semiconductor layer: 10nm, 20nm, 30nm Measurement points: 26 points on the board

[0130] Fig. 25 shows the electrical characteristics (Id-Vg characteristics) of a semiconductor device 10 having an oxide semiconductor layer with a thickness of 10 nm. Fig. 26 shows the electrical characteristics (Id-Vg characteristics) of a semiconductor device 10 having an oxide semiconductor layer with a thickness of 20 nm. Fig. 27 shows the electrical characteristics (Id-Vg characteristics) of a semiconductor device 10 having an oxide semiconductor layer with a thickness of 30 nm. The horizontal axis is the gate voltage Vg, and the vertical axis is the drain current (Id).

[0131] As shown in Fig. 25, the semiconductor device 10 having an oxide semiconductor layer with a thickness of 10 nm did not provide switching characteristics. This is believed to be because when the oxide semiconductor layer had a thickness of 10 nm, the oxide semiconductor layer was not crystallized by the heat treatment and remained amorphous. As shown in Figs. 26 and 27, good electrical characteristics were obtained for the semiconductor device 10. The mobility of the semiconductor device 10 having an oxide semiconductor layer with a thickness of 20 nm was 31.5 cm. 2 The mobility of the semiconductor device 10 having an oxide semiconductor layer with a thickness of 30 nm was 31.4 cm 2 / Vs.

[0132] Example 3 Next, a description will be given of the results of verifying the electrical characteristics of the semiconductor device 10 manufactured according to the sequence shown in Fig. 15 of the second embodiment. In this example, the oxygen partial pressure and film thickness were set in more detail, and the results of verifying the intrinsic mobility and reliability will be described.

[0133] In this example, in step S1002 shown in Fig. 15, an aluminum oxide film was formed as the metal oxide film 130. In step S1003 shown in Fig. 15, an IGO-based sputtering target was used to form the oxide semiconductor film 140 at a substrate temperature of 100° C. or lower. Various conditions were set for the oxygen partial pressure and the thickness of the oxide semiconductor film.

[0134] The thicknesses of the oxide semiconductor film were set to 15 nm, 20 nm, 25 nm, and 30 nm when the oxygen partial pressure was 3%, 4%, and 5%, respectively.

[0135] 15, the oxide semiconductor film 140 was etched with oxalic acid using a resist mask. In step S1005 shown in FIG 15, OS annealing was performed. Then, in step S1006 shown in FIG 15, the metal oxide film 130 was etched with DHF using the oxide semiconductor layer 144 as a mask. After that, the semiconductor device 10 was manufactured according to the sequence shown in FIG 15.

[0136] Next, the electrical characteristics of the semiconductor device 10 fabricated in this example were measured under the following conditions. Channel area 144CH size: W / L=4.5μm / 3μm Source-drain voltage: 0.1V, 10V Gate voltage: -15V~+15V Measurement environment: Room temperature, dark room -Thickness of oxide semiconductor layer: 10nm, 20nm, 30nm Measurement points: 26 points on the board

[0137] 28 shows the intrinsic mobility for each deposition condition of the oxide semiconductor film, where the horizontal axis represents the deposition condition of the oxide semiconductor film, and the vertical axis represents the intrinsic mobility.

[0138] 28, it was confirmed that the lower the oxygen partial pressure when forming the oxide semiconductor film, the higher the intrinsic mobility, and the thinner the oxide semiconductor layer, the higher the intrinsic mobility of the oxide semiconductor layer. In other words, it was confirmed that the lower the oxygen partial pressure when forming the oxide semiconductor film and the thinner the oxide semiconductor layer, the higher the intrinsic mobility of the oxide semiconductor layer.

[0139] Next, the results of a reliability test of the semiconductor device fabricated in this embodiment will be described. Here, PBTS and NBTIS (Negative Bias Illumination Temperature Stress) were performed as the reliability tests. PBTS is to apply a positive voltage to the gate electrode of the semiconductor device and evaluate the amount of variation in the threshold voltage before and after the voltage application. NBTIS is to apply a negative voltage to the gate electrode of the semiconductor device and evaluate the amount of variation in the threshold voltage before and after the voltage application.

[0140] 29 shows the variation ΔVth of the threshold voltage for each deposition condition of the oxide semiconductor film, where the horizontal axis represents the deposition condition of the oxide semiconductor film, and the vertical axis represents the variation of the threshold voltage.

[0141] 29, it was confirmed that the lower the oxygen partial pressure when forming the oxide semiconductor film, the smaller the fluctuation amount of the threshold voltage, and the thinner the oxide semiconductor layer, the smaller the fluctuation amount of the threshold voltage. In other words, it was confirmed that the reliability of the semiconductor device is improved as the oxygen partial pressure when forming the oxide semiconductor film is lower and the oxide semiconductor layer is thinner.

[0142] The above-described embodiments and modifications of the present invention may be combined as appropriate as long as they are not mutually inconsistent. In addition, those in which a person skilled in the art appropriately adds or removes components or modifies designs, or adds or omits processes or modifies conditions, based on the semiconductor device and display device of each embodiment and modification are included in the scope of the present invention as long as they include the gist of the present invention.

[0143] Even if there are other effects and advantages different from those brought about by the aspects of each of the above-mentioned embodiments, those that are clear from the description in this specification or that can be easily predicted by a person skilled in the art are naturally understood to be brought about by the present invention. [Explanation of symbols]

[0144] 10: semiconductor device, 11: driving transistor, 12: selection transistor, 14: oxide semiconductor layer, 20: display device, 22: liquid crystal region, 24: sealing region, 26: terminal region, 100: substrate, 105: gate electrode, 110: gate insulating film, 120: gate insulating film, 130: metal oxide film, 132: metal oxide layer, 140: oxide semiconductor film, 142: oxide semiconductor layer, 143: resist mask, 144: oxide semiconductor layer, 144CH: channel region, 144D: drain region, 144S: source region, 150: gate insulating film, 160: gate electrode, 164: oxide semiconductor layer, 170: insulating film, 171: opening, 173: opening, 180: insulating film, 190: metal oxide film, 200: drain electrode, 201: source electrode, 203: drain electrode, 210: storage capacitor, 211: signal line, 212: gate line, 213: anode power line, 214: cathode power line, 300: array substrate, 301: pixel circuit, 302: source driver circuit, 303: gate driver circuit, 304: source wiring, 306: terminal section, 307: connection wiring, 310: seal section, 311: liquid crystal element, 320: opposing substrate, 330: flexible printed circuit board, 340: chip, 350: storage capacitor, 360: insulating film, 362: insulating film, 363: opening, 370: common electrode, 380: insulating film, 381: opening, 390: pixel electrode, 392: light-emitting layer, 394: common electrode

Claims

1. forming a first metal oxide film containing aluminum as a main component on a substrate; forming an amorphous oxide semiconductor film on the first metal oxide film under conditions where the oxygen partial pressure is 3% or more and 5% or less; The oxide semiconductor film is processed into a patterned oxide semiconductor layer; a first heat treatment is performed on the patterned oxide semiconductor layer to crystallize the oxide semiconductor layer; processing the first metal oxide film using the crystallized oxide semiconductor layer as a mask; forming a gate insulating film on the oxide semiconductor layer; forming a gate electrode on the gate insulating film; The method for manufacturing a semiconductor device, wherein the oxide semiconductor film has a thickness of more than 10 nm and not more than 30 nm.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the temperature during the formation of the oxide semiconductor film is 100° C. or less.

3. 3. The method for manufacturing a semiconductor device according to claim 2, wherein the temperature during the first heat treatment is 300[deg.] C. or more and 500[deg.] C. or less.

4. The method for manufacturing a semiconductor device according to claim 1 , wherein the first metal oxide film has a thickness of 1 nm or more and 50 nm or less.

5. 2. The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: forming a second metal oxide film containing aluminum as a main component after forming the gate insulating film; and performing a second heat treatment.

6. The method for manufacturing a semiconductor device according to claim 1 , wherein the crystallized oxide semiconductor layer has a polycrystalline structure.

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