Surface coating for component of plasma processing chamber

Abstract

To provide a method of coating a component of a plasma processing chamber.SOLUTION: An electrolytic oxidation coating is formed over the surface of the component, with the electrolytic oxidation coating comprising a plurality of pores, the electrolytic oxidation coating having a thickness, and at least some of the pores extending through the thickness of the electrolytic oxidation coating. An atomic layer deposition is deposited on the electrolytic oxidation coating. The atomic layer deposition comprises a plurality of cycles, where each cycle comprises pouring a first reactant, with the first reactant forming a first reactant layer in the pores of the electrolytic oxidation coating and the first reactant layer extending through the thickness of the electrolytic oxidation coating, stopping the pouring of the first reactant, pouring a second reactant, with the second reactant reacting with the first reactant layer, and stopping the pouring of the second reactant.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS This application claims the benefit of priority to U.S. Patent Application No. 62 / 703,698, filed July 26, 2018, which is incorporated herein by reference for all purposes.

[0002] The present disclosure relates to semiconductor device manufacturing, and more particularly to plasma chamber components used in the manufacturing of semiconductor devices. [Background technology]

[0003] During semiconductor wafer processing, plasma processing chambers are used to process the semiconductor devices. Components of the plasma processing chamber are exposed to plasma and arcing, which can degrade the components. Summary of the Invention

[0004] To achieve the above, and in accordance with the objectives of the present disclosure, a method is provided for coating a component of a plasma processing chamber. An electrolytic oxidation coating is formed on a surface of the component, the electrolytic oxidation coating having a plurality of pores, the electrolytic oxidation coating having a thickness, and at least a portion of the plurality of pores extending through the thickness of the electrolytic oxidation coating. An atomic layer deposition product is deposited on the electrolytic oxidation coating using an atomic layer deposition process. The atomic layer deposition process includes a plurality of cycles, each cycle including: flowing a first reactant, the first reactant forming a first reaction layer in the pores of the electrolytic oxidation coating, the first reaction layer extending through the thickness of the electrolytic oxidation coating, stopping the flow of the first reactant, flowing a second reactant, the second reactant reacting with the first reaction layer, and stopping the flow of the second reactant.

[0005] In another aspect, a component adapted for use in a semiconductor processing chamber is provided, wherein an electrolytic oxidation coating is on a surface of a component body, the electrolytic oxidation coating having a plurality of pores, the electrolytic oxidation coating having a thickness, at least a portion of the plurality of pores extending through the thickness of the electrolytic oxidation coating, and an atomic layer deposition material fills the plurality of pores of the electrolytic oxidation coating.

[0006] In another aspect, a method is provided for coating a plasma processing chamber component. A ceramic coating is formed on a surface of the component, the ceramic coating having a plurality of pores, the ceramic coating having a thickness, at least a portion of the plurality of pores extending through the thickness of the ceramic coating. An atomic layer deposit is deposited on the ceramic coating using an atomic layer deposition process, the atomic layer deposition process comprising a plurality of cycles, each cycle including flowing a first reactant gas, the first reactant gas forming a first reactant layer in the pores of the ceramic coating, the first reactant layer extending through the thickness of the ceramic coating, stopping the flow of the first reactant gas, flowing a second reactant gas, the second reactant gas reacting with the first reactant layer, and stopping the flow of the second reactant gas. A portion of the atomic layer deposit is polished away.

[0007] In another aspect, a component adapted for use in a semiconductor processing chamber is provided. A ceramic coating is over a surface of a component body, the ceramic coating having a plurality of pores, the ceramic coating having a thickness, at least a portion of the plurality of pores extending through the thickness of the ceramic coating. An atomic layer deposition material fills the plurality of pores of the ceramic coating. A surface of the atomic layer deposition material is polished.

[0008] In another aspect, a method is provided for coating a plasma processing chamber component: An electrolytic oxidation coating is formed on a surface of the component: A thermal spray coating is deposited on the electrolytic oxidation coating.

[0009] In another aspect, a component adapted for use in a semiconductor processing chamber is provided: an electrolytic oxidation coating overlying a surface of a component body; and a thermal spray coating overlying the electrolytic oxidation coating.

[0010] These and other features of the present disclosure are set forth in the detailed description that follows, taken in conjunction with the accompanying drawings. [Brief description of the drawings]

[0011] The present disclosure is illustrated by way of example, and not by way of limitation, in the accompanying drawings, in which like elements are numbered like elements and in which:

[0012] [Figure 1] 1 is a high level flow chart of one embodiment.

[0013] [Figure 2A] 1 is a schematic diagram illustrating components being processed according to one embodiment. [Figure 2B] 1 is a schematic diagram illustrating components being processed according to one embodiment. [Figure 2C] 1 is a schematic diagram illustrating components being processed according to one embodiment.

[0014] [Diagram 3] FIG. 1 is a schematic diagram illustrating an etching reactor that can be used in one embodiment.

[0015] [Figure 4] 4 is a high level flow chart of another embodiment.

[0016] [Figure 5A] 1 is a schematic diagram illustrating components being processed according to one embodiment. [Figure 5B] 1 is a schematic diagram illustrating components being processed according to one embodiment. [Figure 5C] 1 is a schematic diagram illustrating components being processed according to one embodiment.

[0017] [Figure 6] 4 is a high level flow chart of another embodiment.

[0018] [Figure 7A] 1 is a schematic diagram illustrating components being processed according to one embodiment. [Figure 7B] 1 is a schematic diagram illustrating components being processed according to one embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] The present disclosure will be described in detail below with reference to some embodiments illustrated in the accompanying drawings. In the following description, numerous specific details are set forth to facilitate a thorough understanding of the present disclosure. However, it will be apparent to one skilled in the art that the present disclosure can be practiced without some or all of these specific details. Additionally, detailed descriptions of well-known process steps and / or structures are omitted to avoid unnecessarily obscuring the present disclosure.

[0020] To aid in understanding, Figure 1 illustrates a high level flow chart of a process utilized in one embodiment. In one example embodiment, an electrolytic oxidation coating is formed on the surface of a component (step 104). Electrolytic oxidation is also known as plasma electrolytic oxidation (PEO) and electrolytic plasma oxidation (EPO) or micro-arc oxidation (MAO). Electrolytic oxidation is a method of producing oxide coatings on metals. Electrolytic oxidation uses an AC voltage of higher potential than anodization to create an electrical discharge, and in the case of PEO / EPO, a plasma discharge that provides an electrolytic oxidation coating of a crystalline metal oxide layer with interconnected and surface-connected pores that extend through the thickness of the electrolytic oxidation coating.

[0021] FIG. 2A is a schematic cross-sectional view of a component body 204 with an electrolytic oxidation coating 208. The electrolytic oxidation coating 208 has a plurality of pores 212, where some of the pores 212 form openings. The openings extend through the thickness of the electrolytic oxidation coating 208 to the surface of the component body 204. The pores 212 are not drawn to scale and are shown with an expanded width to better illustrate the operation of the present embodiment. Furthermore, the pores 212 may be more irregular and tortuous. The schematic diagram is intended to facilitate a better understanding of the operation of the present embodiment. In this embodiment, the component body 204 is formed of aluminum. In another embodiment, the component body 204 is formed of anodized aluminum or a ceramic body. In this embodiment, the electrolytic oxidation coating 208 includes alumina. In another embodiment, the electrolytic oxidation coating 208 includes an oxide or fluorinated oxide of at least one of aluminum, titanium, or magnesium.

[0022] If the component body 204 is ceramic and / or not simply metallic, a metal layer may be deposited on the surface of the component body 204. The metal layer may be deposited by physical vapor deposition, electrochemical vapor deposition from a solution containing metal ions, or by 3D printing the metal directly onto the surface of the component body 204. Electrolytic oxidation is performed on the deposited metal layer.

[0023] In the plasma electrolytic process for the aluminum component body 204, a high voltage of at least 200 volts is applied. The high voltage exceeds the breakdown potential of the aluminum oxide film, causing an electrical discharge and a local plasma. The high bias, electrical discharge, and plasma cause localized high temperatures. These conditions can result in sintering, melting, and densification of the resulting metal oxide. In one embodiment, the thickness of the electrolytic oxide coating 208 is greater than 25 μm.

[0024] A surface treatment is applied to the electrolytic oxide coating 208 (step 106). In this example, the surface treatment is applied by exposing the electrolytic oxide coating 208 to a flow of ozone at a temperature ranging from 150° C. to 320° C. This surface treatment provides some degree of cleaning and prepares the surface for the next ALD process. It is important that the surface is free of hydrocarbons, water, or other contaminants, and that the surface has active oxygen radicals to absorb reactants with the metal precursors. In an alternative embodiment, the surface treatment provides multiple purge cycles of inert gas at elevated temperatures to burn off hydrocarbons and drive water away from the surface.

[0025] An atomic layer deposition (ALD) process is then provided (step 108). The atomic layer deposition process (step 108) includes multiple cycles. In this example, each cycle includes providing a first reactant (step 112), purging the first reactant (step 114), providing a second reactant (step 116), and purging the second reactant (step 118). In this embodiment, the component body 204 is maintained at a temperature between about 150° C. and 320° C. for deposition of an aluminum oxide (Al2O3) ALD film to coat the surfaces of the pores 212 in the electrolytic oxidation coating 208.

[0026] In this embodiment, providing the first reactant (Step 112) includes providing 500-200 sccm of trimethylaluminum (Al2(CH3)6). The amount of trimethylaluminum varies depending on the size of the reactor and the number of components 204 that are placed in the reactor at the same time. The first reactant forms a first reactant or aluminum-containing layer on the surface of the electrolytic oxidation coating 208, including the surfaces of the pores 212. The flow of the first reactant is stopped after 10-30 seconds. 10-30 seconds is typically sufficient to form a monolayer of absorbed aluminum (Al) and methyl radicals (CH3) on the surface of the component body 204.

[0027] Purging the first reactant (Step 114) includes flowing in nitrogen. The flow of nitrogen displaces any remaining first reactant in the reactor.

[0028] In this embodiment, providing the second reactant (Step 116) includes providing a flow of water vapor. The water vapor reacts with the first reactant layer by hydrolyzing aluminum in the first reactant layer. The flow of the second reactant is stopped after 10 to 30 seconds.

[0029] Purging the second reactant (Step 118) includes flowing in nitrogen. The flow of nitrogen displaces any remaining second reactant in the reactor.

[0030] Each of the first and second reactants is absorbed and reacted on the surface of the component body 204 in a cycle defined as a half cycle. Absorption is limited to one atomic layer. These two reactants form a thin layer of ALD film (e.g., Al2O3) with a thickness of about 1 Å. The process is repeated until the desired film thickness is achieved. FIG. 2B is a schematic cross-sectional view showing the component body 204 with an electrolytic oxide coating 208 on the surface of the component body 204 after multiple cycles of the atomic layer deposition process (step 108). An atomic layer deposit 216 is deposited. In this example, after multiple cycles, the ALD 216 can only partially fill two pores 212a, 212b due to their width. The third pore 212c is completely filled by the ALD 216 because it is narrower. The ALD 216 extends through the thickness of the electrolytic oxide coating 208 to the component body 204. ALD 216 covers the exposed portions of component body 204 such that the surface of component body 204 is not exposed. The ALD process continues and repeats until all of pores 212 are completely filled (step 108). Figure 2C is a schematic cross-sectional view showing component body 204 with electrolytic oxidation coating 208 after pores 212 have been completely filled by ALD 216.

[0031] The component body 204 is mounted in a plasma processing chamber (step 120). The plasma processing chamber is used to process a substrate (step 124). A plasma is generated in the chamber to process the substrate. Such a process may be a process to etch the substrate. Processing the substrate (step 124) exposes the component body 204 to the plasma.

[0032] FIG. 3 is a schematic diagram showing a plasma processing chamber 300 with an attached component body 204. The plasma processing chamber 300 includes a confinement ring 302, an upper electrode 304, a lower electrode 308, a gas source 310, a liner 362, and an exhaust pump 320. In this example, the component body 204 is the liner 362. In the plasma processing chamber 300, a wafer 366 is disposed on the lower electrode 308. An edge ring 312 surrounds the wafer 366. The lower electrode 308 includes a substrate chucking mechanism (e.g., electrostatic chuck, mechanical clamp, etc.) suitable for holding the wafer 366. The reactor top 328 incorporates an upper electrode 304 disposed just opposite the lower electrode 308. The upper electrode 304, the lower electrode 308, and the confinement ring 302 define a confined plasma volume 340.

[0033] Gas is supplied to the confined plasma volume 340 by a gas source 310 through a gas inlet 343. The gas is exhausted from the confined plasma volume 340 through the confinement rings 302 and an exhaust port by an exhaust pump 320. A radio frequency (RF) power source 348 is electrically connected to the lower electrode 308.

[0034] The chamber walls 352 surround the component body 204, the confinement rings 302, the upper electrode 304, and the lower electrode 308. The component body 204 helps to prevent gas or plasma passing through the confinement rings 302 from contacting the chamber walls 352. A controller 335 is controllably connected to the RF power source 348, the exhaust pump 320, and the gas source 310. The plasma processing chamber 300 may be a CCP (capacitively coupled plasma) reactor or an ICP (inductively coupled plasma) reactor. Other plasma sources such as surface wave, microwave, or electron cyclotron resonance (ECR) may also be used.

[0035] Next generation dielectric memory tools operate at higher RF power than previous tools. These next generation dielectric memory tools have shown arcing failures between the electrostatic chuck (ESC) base plate used for the lower electrode 308 and various edge hardware on the chamber (such as the edge ring 312, ground ring, and bond ring). Arcing failures are responsible for over 50% of all failures in the next generation tools. To prevent such failures, the standoff voltage of the base plate or other components must be increased.

[0036] Without being bound by theory, it is believed that the chemisorbed material within the pores 212 of the electrolytic oxide coating 208 provides a conductive path during plasma processing. The conductive path may facilitate arcing. Filling the pores 212 with the atomic layer deposition material 216 prevents such arcing, leading to improved dielectric breakdown performance. The ALD material is preferably highly resistive and non-conductive. Additionally, filling the pores 212 with the atomic layer deposition material 216 closes the pores 212 against permeation, thus preventing radicals from the plasma from reaching the component body 204.

[0037] The resulting electrolytic oxide coating 208 is resistant to chemical degradation and arcing. In some embodiments, the ALD process (step 108) improves the ability of the electrolytic oxide coating 208 to withstand arcing by up to 200% per unit thickness. Experimental data shows that an electrolytic oxide coating 208 deposited with PEO to a thickness of 50 μm has a standoff voltage of about 1.7 kV (kilovolts) without ALD 216. The same electrolytic oxide coating 208 has a standoff voltage of about 3.0-4.0 kV after the addition of ALD 216. Thus, the addition of ALD 216 increases the dielectric strength by about a factor of two. As a result, plasma processing chambers 300 equipped with such components 204 have fewer defects. Furthermore, the failure rate of such systems is reduced, thereby increasing the interval between replacement of the component body 204.

[0038] In various embodiments, the ALD process (step 108) may be used to form a dielectric atomic layer deposition 216 of a metal-containing material, such as ceria, zirconia, lanthanum oxide, yttria (YO), alumina (AlO), aluminum nitride (AlN), aluminum carbide (AlC), or yttrium iodide (YI). In some embodiments, a combination of these film compositions may be used, for example, YO may be inserted with AlO to enhance the fluorine corrosion resistance of the electrolytic oxide coating 208 in the plasma processing chamber 300. YO is produced using a yttrium precursor (e.g., yttrium cyclomethapentadiene 3) with water vapor. In various embodiments, the dielectric layer of the metal-containing material is a metal oxide, metal nitride, metal carbide, or metal iodide. In other embodiments, fluorides of the above materials may be formed, such as AlF3, AlOF, yttrium fluoride (YF3), or yttrium oxide fluoride (YOF). In some embodiments, the first reactant may be trimethylaluminum and the second reactant is water vapor. In various embodiments, the ALD process (step 108) may provide alternating layers of different materials. For example, alternating layers of alumina and yttria may be provided in one embodiment. In various embodiments, the first purge (step 114) and / or the second purge (step 118) may not be used.

[0039] The electrolytic oxidation coating 208 may have a density of less than 98%, such that the pores 212 occupy more than 2% of the electrolytic oxidation coating 208 by volume, providing a porosity of greater than 2%. Preferably, the electrolytic oxidation coating 208 has a thickness of 25 μm or more and less than 500 μm. In another exemplary embodiment, the thickness is between 50 μm and 400 μm. In another exemplary embodiment, the electrolytic oxidation coating 208 has a thickness of 200 μm or more. In another exemplary embodiment, the electrolytic oxidation coating 208 has a thickness of 300 μm or more. For electrolytic oxidation coatings 208 formed with PEO, the porosity may be greater than 20%.

[0040] In various embodiments, the component body 204 may be other parts of a plasma processing chamber, such as a confinement ring, edge ring 312, electrostatic chuck, ground ring, chamber liner, door liner, or other component 204. The plasma processing chamber 300 may be a dielectric processing chamber or a conductive processing chamber. In some embodiments, one or more but not all surfaces are coated. Various embodiments provide an electrolytic oxidation coating 208 that allows for flat surfaces, rounded radii, high aspect ratio holes, and helium channels. In some embodiments, the component body 204 may be a part formed of aluminum. In other embodiments, the component body 204 may be an aluminum part with a surface coating. The surface coating may reduce temperature mismatch between the aluminum and the electrolytic oxidation coating 208.

[0041] Further processing may be performed on the component body 204 before it is mounted (step 120) or utilized (step 124) in the plasma processing chamber 300. For example, a second coating may be sprayed onto the electrolytic oxidation coating 208. The second coating may have pores. However, because the electrolytic oxidation coating 208 between the second coating and the component body 204 has pores 212 filled with ALD 216, arcing and chemical degradation are prevented.

[0042] In one embodiment, the component body 204 is aluminum and the electrolytic oxide coating 208 is formed by providing the electrolytic oxide coating 208 with a thickness between 0.0005 inches (0.00127 mm) and 0.005 inches (0.0127 mm). In another embodiment, the electrolytic oxide coating 208 has a thickness between 0.001 inches (0.0254 mm) and 0.040 inches (1.016 mm). In various embodiments, the pores 212 have a width of less than 1 micron. In some embodiments, using aluminum-containing reactants for atomic layer deposition, a gas permeation of greater than 1000:1 is provided at temperatures greater than 300° C. This means that the ratio of the distance a gas can travel through the pores 212 to the width of the pores 212 is greater than 1000:1.

[0043] In various embodiments, the first reactant may be an organic molecule that is bound to a metal ligand at one end, and the second reactant may be an oxidizer (such as water vapor or ozone). The organic molecule is reactive at temperatures below the melting point of the material forming the component body 204. For example, the organic molecule decomposes or is absorbed at temperatures below 50° C.

[0044] Various embodiments provide a smooth surface. The resulting surface may be machined. The ALD process is a very slow process, but provides a high quality layer. Various embodiments provide a layer faster than using only a pure ALD process by using a fast method to form an electrolytic oxidation coating 208 that is more porous or of lower quality than a coating formed by only a pure ALD process. Using the ALD process, the pores 212 are filled and the quality is improved (step 108). As a result, a layer with a porosity close to that of a layer formed by only a pure ALD process is deposited faster than using only a pure ALD process. Because the pores 212 are filled with a material with similar or the same properties as the electrolytic oxidation coating 208, there is no thermal expansion mismatch between the electrolytic oxidation coating 208 and the material filling the pores 212 deposited by the ALD process (step 108). The electrolytic oxidation coating 208 and the ALD 216 form a protective layer that is free of polymers. Polymers are relatively easy to degrade in a plasma. The resulting layer is more corrosion resistant. In various embodiments, when the pores 212 are filled with ALD 216, the ALD 216 extends through the thickness of the electrolytic oxidation coating 208 so that the component body 204 is not exposed. In various embodiments, the ALD 216 covers (caps) the tops of the pores 212 so that the component body 204 is not exposed.

[0045] In an exemplary embodiment, the ALD 216 fills the pores 212 with minimal pockets. In such embodiments, the component body 204 is not exposed. In other embodiments, the ALD 216 may have pockets. In such embodiments, the ALD 216 extends to and covers the component body 204 such that the component body 204 is not exposed.

[0046] In these examples and in other embodiments, the ALD process (step 108) is a non-plasma process. In other embodiments, the ALD process (step 108) uses ozone instead of water vapor. Various embodiments may be performed without the surface treatment step (step 106).

[0047] To facilitate understanding, FIG. 4 illustrates a high level flow chart of a process utilized in another embodiment. In an example embodiment, a ceramic coating is formed on a surface of a component (step 404). In this example, the ceramic coating is deposited using plasma spraying (step 404). FIG. 5A is a schematic cross-sectional view of a component body 504 with a ceramic coating 508. The ceramic coating 508 is plasma sprayed onto the surface of the component body 504. The ceramic coating 508 has a plurality of pores 512, where some of the pores 512 form openings. The openings extend through the thickness of the ceramic coating 508 to the surface of the component body 504. The pores 512 are not drawn to scale and are shown with an expanded width to better illustrate the operation of this embodiment. Additionally, the pores 512 may be more irregular and tortuous. The schematic diagram is intended to facilitate a better understanding of the operation of this embodiment. In this embodiment, the component body 504 is formed of anodized aluminum. In another embodiment, the component body 504 is formed of an aluminum or ceramic body. In this embodiment, the ceramic coating 508 comprises alumina. In other embodiments, the ceramic coating 508 comprises at least one of alumina, yttrium oxide (yttria), aluminum carbide, yttrium iodide ceria, zirconia, yttria fluoride, aluminum nitride, or lanthanum oxide. In various embodiments, the ceramic coating 508 is applied by one or more of plasma electrolytic oxidation (PEO), anodization, or ceramic spraying.

[0048] Plasma spraying is a type of thermal spraying. For plasma spraying, a torch is formed by applying an electrical potential between two electrodes, causing ionization of an accelerated gas (plasma). This type of torch can quickly reach temperatures of several thousand degrees Celsius to melt high melting point materials such as ceramics. Particles of the desired material are introduced into the jet. The particles are melted and accelerated toward the substrate such that the molten or plasticized material coats the surface of the component body 504. The material cools to form a solid, conformal ceramic coating 508. Plasma spraying processes are different from vapor deposition processes. Vapor deposition processes use evaporated material instead of the sprayed molten material used by plasma spraying processes.

[0049] In this embodiment, the thickness of the ceramic coating 508 is greater than 25 μm. In one example recipe for plasma spraying the ceramic coating 508, a carrier gas is forced out of a nozzle through an arch cavity. Within the cavity, a cathode and an anode comprise a portion of the arc cavity. The cathode and anode are maintained at a large direct current (DC) bias voltage until the carrier gas begins to ionize and form a plasma. The hot ionized gas is then forced out of the nozzle to form a torch. Into the chamber, near the nozzle, flowing ceramic particles of tens of micrometers in size are injected. These particles are heated by the hot ionized gas in the plasma torch to a temperature above the melting point of the ceramic. The plasma and the jet of molten ceramic are then directed at the component body 504. The particles impact the component body 504 and flatten and cool to form the ceramic coating 508.

[0050] A surface treatment is applied to the ceramic coating 508 (step 406). In this example, the surface treatment is applied by exposing the ceramic coating 508 to a flow of ozone at a temperature ranging from 150° C. to 320° C. This surface treatment provides a degree of cleaning and prepares the surface for the subsequent ALD process. It is important that the surface is free of hydrocarbons or other contaminants and that the surface has active oxygen radicals to absorb the first reactant with the metal precursor.

[0051] An atomic layer deposition (ALD) process is then provided (step 408). The atomic layer deposition process (step 408) includes multiple cycles. In this example, each cycle includes providing a first reactant (step 412), purging the first reactant (step 414), providing a second reactant (step 416), and purging the second reactant (step 418). In this embodiment, the component body 504 is maintained at a temperature between about 150° C. and 320° C. for deposition of an aluminum oxide (Al2O3) ALD film to coat the surfaces of the pores 512 in the ceramic coating 508. In this embodiment, providing the first reactant (step 412) includes providing 500-200 sccm of trimethylaluminum (Al2(CH3)6). The amount of trimethylaluminum varies depending on the size of the reactor and the number of component bodies 504 that are placed in the reactor at the same time. The first reactant forms a first reactant layer, an aluminum-containing layer, on the surface of the ceramic coating 508, including the surfaces of the pores 512. The flow of the first reactant is stopped after 10-30 seconds, which is typically sufficient to form a monolayer of absorbed aluminum (Al) and methyl radicals (CH3) on the surface of the component body 504.

[0052] Purging the first reactant (step 414) includes flowing nitrogen. In this embodiment, supplying the second reactant (step 416) includes flowing water vapor. The water vapor reacts with the first reactant layer by hydrolyzing the aluminum in the first reactant layer. The flow of the second reactant is stopped after 10-30 seconds. Purging the second reactant (step 418) includes flowing nitrogen. Each of these reactants is absorbed and reacts on the surface of the component body 504 in a cycle defined as a half cycle. Absorption is limited to one atomic layer. These two reactants form a thin layer of ALD film (e.g., about 1 Å thick for Al2O3). The ALD process continues (step 408) until all of the pores 512 are completely filled. FIG. 5B is a schematic cross-sectional view of the component body 504 with the ceramic coating 508 after the pores 512 are completely filled by ALD 516.

[0053] The surface is then polished (step 420). In this example, the polishing process may remove portions of the ALD 516 that do not fill the pores 512 and further polish the surface of the component body 504 to provide a smooth polished ALD surface.

[0054] The component body 504 is mounted in a plasma processing chamber (step 424). The plasma processing chamber is used to process a substrate (step 428). A plasma is generated in the chamber to process the wafer 366. Such a process may be a process to etch a stack on the wafer 366. The processing of the wafer 366 (step 428) exposes the component body 504 to the plasma.

[0055] In this embodiment, the ALD516 and polishing of the component body 504 provide a smooth finish. Experiments have shown that with plasma spray, the coating without ALD516 has a dielectric strength of about 20 volts / micron. The same coating has a dielectric strength of about 40 volts / micron or more after the addition of ALD516. Thus, the addition of ALD516 increases the dielectric strength by about four times.

[0056] FIG. 6 shows a high level flow chart of a process utilized in another embodiment. In an example embodiment, an electrolytic oxidation coating is formed on the surface of a component (step 604). FIG. 7A is a schematic cross-sectional view of a component body 704 with an electrolytic oxidation coating 708. The electrolytic oxidation coating 708 has a plurality of pores 712, where some of the pores 712 form openings. The openings extend through the thickness of the electrolytic oxidation coating 708 to the surface of the component body 704. The pores 712 are not drawn to scale and are shown with an expanded width to better illustrate the operation of the embodiment. Furthermore, the pores 712 may be more irregular and tortuous. The schematic diagram is intended to facilitate a better understanding of the operation of the embodiment. In this embodiment, the component body 704 is formed of aluminum. In this embodiment, the electrolytic oxidation coating 708 includes an oxide or fluorinated oxide of at least one of aluminum, titanium, or magnesium.

[0057] A thermal spray coat is deposited over the electrolytic oxide coating 708 (step 612). FIG. 7B is a schematic cross-sectional view of the component body 704 with the electrolytic oxide coating 708 after the thermal spray coating 716 has been deposited over the electrolytic oxide coating 708. The thermal spray coating 716 may partially fill the pores 712 in the electrolytic oxide coating 708. The thermal spray coating 716 covers the pores 712 in the electrolytic oxide coating 708. The thermal spray coating 716 has pores 720. Generally, the pores 720 of the thermal spray coating 716 are not aligned with the pores 712 of the electrolytic oxide coating 708. However, some of the pores 720 of the thermal spray coating 716 may be aligned with some of the pores 712 of the electrolytic oxide coating 708. The plasma spray coating must be dense to protect the substrate and thick to obtain a high breakdown voltage. Such a combination is prone to cracking during temperature cycling. Instead, if a plasma spray coating is applied over PEO, a higher cumulative breakdown voltage can be achieved by applying a relatively low density spray coat over it, because PEO is much more stable during temperature cycling. The resulting coating is less susceptible to cracking.

[0058] Although the present disclosure has been described with reference to several embodiments, various alternatives, permutations, modifications, and equivalents exist within the scope of the present disclosure. It should also be noted that there are many other ways to implement the method and apparatus of the present disclosure. Therefore, the appended claims should be interpreted as covering all alternatives, permutations, and equivalents that fall within the true spirit and scope of the present disclosure.

Claims

1. A method for coating components of a plasma processing chamber, comprising: forming a ceramic coating on a surface of the component, the ceramic coating having a plurality of pores, the ceramic coating having a thickness, and at least some of the plurality of pores extending through the thickness of the ceramic coating; depositing an atomic layer deposition on the ceramic coating using an atomic layer deposition process, the atomic layer deposition process comprising a plurality of cycles, each cycle comprising: flowing a first reaction gas, the first reaction gas forming a first reaction layer within the pores of the ceramic coating, the first reaction layer extending through the thickness of the ceramic coating; stopping the flowing of the first reaction gas; flowing a second reaction gas, the second reaction gas reacting with the first reaction layer; stopping the flowing of the second reaction gas; polishing and removing a portion of the atomic layer deposition; A method comprising the above steps.

2. The method according to claim 1, wherein the ceramic coating comprises at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide.

3. The method according to claim 1, wherein the component comprises at least one of aluminum, anodized aluminum, or a ceramic.

4. The method according to claim 1, wherein the ceramic coating is thicker than 25 μm.

5. The method according to claim 1, wherein the porosity of the ceramic coating is greater than 2%.

6. The method according to claim 1, wherein the atomic layer deposition forms a deposition of one of ceria, zirconia, lanthanum oxide, yttria, alumina, aluminum nitride, aluminum carbide, or yttrium iodide.

7. The method according to claim 1, wherein depositing the ceramic coating comprises at least one of plasma electrolytic oxidation, anodization, or ceramic spraying.

8. A component adapted for use in a semiconductor processing chamber, comprising: a component body, A ceramic coating on the surface of the component body, the ceramic coating having a plurality of pores, the ceramic coating having a thickness, at least some of the plurality of pores extending through the thickness of the ceramic coating, An atomic layer deposit filling the plurality of pores of the ceramic coating, A polished surface of the atomic layer deposit, A component comprising the above.

9. The component according to claim 8, wherein the ceramic comprises at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide.

10. The component according to claim 8, wherein the component body comprises at least one of aluminum, anodized aluminum, or ceramic.

11. The component according to claim 8, wherein the ceramic coating is thicker than 25 μm.

12. The component according to claim 8, wherein the porosity of the ceramic coating is greater than 2%.

13. The component according to claim 8, wherein the atomic layer deposit comprises one of ceria, zirconia, lanthanum oxide, yttria, alumina, aluminum nitride, aluminum carbide, or yttrium iodide.

14. A method for coating a component of a plasma processing chamber, comprising: Forming an anodic oxidation coating on the surface of the component, Depositing a sprayed coating on the anodic oxidation coating. A method comprising the above.

15. The method according to claim 14, wherein the anodic oxidation coating comprises at least one oxide or fluorinated oxide of aluminum, titanium, or magnesium.

16. The method according to claim 14, wherein the component comprises at least one of aluminum, anodized aluminum, or ceramic.

17. The method according to claim 14, wherein the sprayed coating comprises at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide.

18. A component adapted for use in a semiconductor processing chamber, comprising: A component body, The electrolytic oxidation coating on the surface of the component body, and the thermal spray coating on the electrolytic oxidation coating, and a component comprising the same.

19. The component according to claim 18, wherein the electrolytic oxidation coating contains at least one oxide or fluorinated oxide of aluminum, titanium, or magnesium.

20. The component according to claim 18, wherein the component body contains at least one of aluminum, anodized aluminum, or ceramic.

21. The component according to claim 18, wherein the thermal spray coating contains at least one of yttria, ceria, zirconia, fluorinated yttria, aluminum nitride, alumina, or lanthanum oxide.

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