Film deposition apparatus and film deposition method

JP2024130286A5Pending Publication Date: 2026-03-04CANON TOKKI CORP
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Patent Information

Application Number
JP2023039927
Authority / Receiving Office
JP · JP
Patent Type
Applications
Current Assignee / Owner
Filing Date
2023-03-14
Publication Date
2026-03-04

AI Technical Summary

Technical Problem

Large substrates are prone to bending during adsorption, making it difficult to properly adhere to adsorption members, and pressing the peripheral edge to suppress deflection can induce localized stress, potentially damaging the substrate.

Method used

A film forming apparatus with movable support and pressing members that apply differential pressure to the substrate's periphery, minimizing deformation and stress by adjusting pressure based on the amount of substrate deformation in different regions.

Benefits of technology

Stable adhesion of the substrate to the adsorption member is achieved without causing damage, ensuring precise film formation by reducing substrate deflection and stress.

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Abstract

To provide a film deposition apparatus and a film deposition method capable of stably adsorbing a substrate to an adsorption member without causing an adverse effect to the substrate.SOLUTION: A film deposition apparatus includes: an electrostatic chuck 31; multiple support members 41 for supporting a circumference of a surface on a film deposition side of a substrate at least either before or after the adsorption of the substrate to the electrostatic chuck 31; and multiple press members 71 configured to move in a direction crossing the surface on the film deposition side of the substrate, and pressing the circumference of the substrate from an opposite side of the surface on the film deposition side of the substrate so as to clamp the circumference of the substrate together with the multiple support member 41. The multiple press members 71 press a second area more strongly than the first area, the second area having a deformation amount of the substrate smaller than that of the first area, the deformation being caused by a self-weight of the substrate when the substrate is supported by the multiple support members 41.SELECTED DRAWING: Figure 1
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Description

[Technical field]

[0001] The present invention relates to a film forming apparatus and a film forming method. [Background technology]

[0002] 2. Description of the Related Art Conventionally, in a film formation apparatus, a technique is known in which a chucking member is provided for chucking a surface of a substrate opposite to a surface on which a film is formed. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2019-99910 A Summary of the Invention [Problem to be solved by the invention]

[0004] In recent years, substrates have become larger, and if the substrate is significantly warped before being attached to the suction member, it may be difficult to properly attach the substrate to the suction member. Therefore, the applicant has been studying a technique for suppressing the warping of the substrate by pressing the substrate edge from the side opposite to the side where the edge is supported while the substrate edge is supported. However, there is a concern that the stress on the substrate becomes high in some parts when the substrate is pressed, which may adversely affect the substrate. [Means for solving the problem]

[0005] The film forming apparatus of the present invention comprises: an adsorption member for adsorbing a surface of the substrate opposite to a surface on which a film is to be formed; a plurality of support members for supporting a peripheral edge of a surface of the substrate on a film formation side at least either before or after the substrate is attracted to the attraction member; a plurality of pressing members configured to be movable in a direction intersecting a surface of the substrate on a film-forming side, and configured to press the peripheral edge of the substrate from the side opposite to the surface of the substrate on a film-forming side so as to sandwich the peripheral edge of the substrate between the plurality of support members; Equipped with The multiple pressing members are characterized in that they press a second region, in which the amount of deformation of the substrate due to its own weight when the substrate is supported by the multiple supporting members is smaller than that of the first region, more strongly than the first region.

[0006] In addition, a film forming apparatus according to another aspect of the present invention includes: an adsorption member for adsorbing a surface of the substrate opposite to a surface on which a film is to be formed; a plurality of support members for supporting a peripheral edge of a surface of the substrate on a film formation side at least either before or after the substrate is attracted to the attraction member; a plurality of pressing members configured to be movable in a direction intersecting a surface of the substrate on a film-forming side and pressing positions on the substrate directly behind each of the support regions of the substrate supported by the support members; Equipped with each of the support regions has a first region in which the amount of deformation of the substrate caused by its own weight is large when the substrate is supported by the plurality of support members, and a second region in which the amount of deformation is smaller than that of the first region; The plurality of pressing members press the second region more strongly than the first region. Effect of the Invention

[0007] As described above, according to the present invention, the substrate can be suctioned to the suction member in a stable state without adversely affecting the substrate. [Brief description of the drawings]

[0008] [Figure 1] FIG. [Diagram 2] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Diagram 3] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 4] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Diagram 5] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 6] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 7]FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 8] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 9] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 10] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 11] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 12] FIG. 2 is an explanatory diagram of the operation of a main part of the film forming apparatus. [Figure 13] FIG. 1 is an explanatory diagram of an organic EL display device. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, the embodiment of the present invention will be described in detail with reference to the drawings. However, the dimensions, materials, shapes, relative positions, and the like of the components described in the embodiment are not intended to limit the scope of the present invention unless otherwise specified.

[0010] (Example) A film forming apparatus and a film forming method according to an embodiment of the present invention will be described with reference to Figures 1 to 12. In Figures 1 to 3 and 5 to 12, members that operate together are hatched in the same manner to make the operation of each member easier to understand. Although each member is shown in cross section in these figures, the fact that it is hatched does not necessarily mean that the cross section is shown, since each member may be located at different positions on the front and back sides of the paper.

[0011] <Configuration of film formation equipment> In particular, the overall configuration of the film formation apparatus 1 will be described with reference to Fig. 1. Fig. 1 is a schematic diagram of the overall configuration of the film formation apparatus. The film formation apparatus 1 includes a chamber 10 and a film formation source 20 provided in the chamber 10. The interior of the chamber 10 is configured so that a vacuum atmosphere or an inert gas atmosphere can be maintained. As the film formation source 20, in addition to an evaporation source that evaporates or sublimes a film formation material, a sputtering cathode for forming a film by sputtering, etc. can be used.

[0012] The upper part of the chamber 10 is provided with various mechanisms for aligning the substrate S, which is the target of film formation, with the mask M, which is placed on the film-forming side of the substrate S, in order to form a thin film of a desired pattern on the substrate S. In this embodiment, the chamber 10 in which the film-forming source 20 is placed is provided with these various mechanisms, but a configuration in which a chamber for aligning the substrate S with the mask M and a chamber in which the film-forming source is provided may be separately provided. In this case, after the substrate S and the mask M are aligned in the alignment chamber, the substrate S and the mask M are transported to a chamber in which the film-forming source is provided, and film formation is performed thereon. In this embodiment, the substrate S is peeled off from the electrostatic chuck 31 as an adsorption member after film formation on the substrate S by the above-mentioned various mechanisms, but a configuration in which the mechanism is provided in another chamber may also be adopted.

[0013] The following describes various mechanisms for aligning the substrate S and the mask M. A base member 11 and a support plate 12 for supporting various mechanisms are fixed to the ceiling of the chamber .

[0014] A first lifting mechanism 30 for vertically raising and lowering an electrostatic chuck 31 is attached to the base member 11. The first lifting mechanism 30 includes a holding member 32 for holding the electrostatic chuck 31, a shaft member 33 for raising and lowering the holding member 32, and a drive source 34 for raising and lowering the shaft member 33. The holding member 32 includes a lifting plate 32a perpendicular to the vertical direction. The specific configuration of the lifting mechanism may be implemented by various known techniques such as a ball screw mechanism, and detailed description thereof will be omitted. The electrostatic chuck 31 has an electrode 31a therein, and is configured to generate an electrostatic adsorption force when a voltage is applied to the electrode 31a. Note that various known methods such as a Coulomb force type, a Johnson-Rahbek force type, and a gradient force type may be adopted as a method for generating an electrostatic adsorption force. The electrostatic chuck 31 adsorbs the surface of the substrate S opposite to the surface on which the film is formed, and holds the substrate S.

[0015] The lift plate 32a of the holding member 32 in the first lift mechanism 30 is provided with a second lift mechanism 40 for vertically lifting the substrate S. The second lift mechanism 40 includes a plurality of support members 41 for supporting the periphery of the surface of the substrate S on the film-forming side, a shaft member 42 for lifting and lowering the support members 41, and a drive source 43 for lifting and lowering the shaft member 42. The specific configuration of the lift mechanism may employ various known techniques such as a ball screw mechanism, and therefore detailed description thereof will be omitted. When the lift plate 32a is lifted and lowered by the first lift mechanism 30 without operating the second lift mechanism 40, the electrostatic chuck 31 and the substrate S are lifted and lowered together. On the other hand, the substrate S can be lifted and lowered relative to the electrostatic chuck 31 by operating the second lift mechanism 40.

[0016] The film forming apparatus 1 also includes a mask adjustment mechanism 50 as a mask driving unit that adjusts the position of the mask M. The mask adjustment mechanism 50 includes a support part 51 fixed to the ceiling part of the chamber 10, a mask table receiving part 52 provided at the lower end of the support part 51, and a magnetic field generating coil box 53 fixed to the support part 51. A magnet 55 is provided on the periphery of a mask table 54 as a mask holding part that holds the mask M. The mask table 54 is arranged so that the magnet 55 is disposed in the gap between the mask table receiving part 52 and the magnetic field generating coil box 53. The magnetic field generated by the magnetic field generating coil box 53 is controlled to adjust the horizontal position of the mask table 54 while it is floating by magnetic levitation. That is, if the directions perpendicular to the vertical direction and perpendicular to each other are defined as the X and Y directions, and the direction rotating around the vertical direction is defined as the θ direction, the position of the mask table 54 can be adjusted in the X, Y, and θ directions by controlling the magnetic field generated by the magnetic field generating coil box 53.

[0017] The mask adjustment mechanism 50 also has a third lifting mechanism for lifting and lowering the mask M. This third lifting mechanism is attached to the support plate 12 fixed to the ceiling of the chamber 10, and includes a support member 56 for supporting the mask M, a shaft member 57 for lifting and lowering the support member 56, and a drive source 58 for lifting and lowering the shaft member 57. Since various known techniques such as a ball screw mechanism can be adopted for the specific configuration of the lifting mechanism, detailed description thereof will be omitted. This mask lifting mechanism is used to receive the mask M transported into the chamber 10 and place the mask M on the mask table 54. FIG. 1 shows a state in which the mask M is placed on the mask table 54.

[0018] In addition, a fourth lifting mechanism 60 is attached to the base member 11. The fourth lifting mechanism 60 vertically lifts and lowers a magnetic attraction member 61 that magnetically attracts the mask M via the substrate S and electrostatic chuck 31 after the substrate S and mask M are aligned. The device includes a holding member 62 that holds the gas adsorption member 61, and a drive source 63 that raises and lowers the holding member 62. The specific configuration of the lifting mechanism can employ various known techniques such as a ball screw mechanism, and therefore detailed description thereof will be omitted.

[0019] Furthermore, the film forming apparatus 1 according to this embodiment includes a plurality of pressing members 71 that are configured to be movable in a direction intersecting the film-forming surface of the substrate S (vertical direction in this embodiment) and press the periphery of the substrate S from the opposite side to the film-forming surface of the substrate S. The film forming apparatus 1 also includes a fifth lifting mechanism 70 that raises and lowers the plurality of pressing members 71 in a vertical direction that intersects the film-forming surface of the substrate S. The fifth lifting mechanism 70 is attached to the lifting plate 32a of the holding member 32 in the first lifting mechanism 30. The fifth lifting mechanism 70 also includes a plurality of pressing members 71, a shaft member 72 for raising and lowering the plurality of pressing members 71, and a drive source 73 for raising and lowering the shaft member 72. The specific configuration of the lifting mechanism may be implemented by various known techniques such as a ball screw mechanism, and therefore a detailed description thereof will be omitted.

[0020] With the substrate S supported by the multiple support members 41, the peripheral edge of the substrate S is pressed by the multiple pressing members 71, so that the peripheral edge of the substrate S is sandwiched between the multiple support members 41 and the multiple pressing members 71. As a result, the peripheral edge of the substrate S becomes horizontal, and the bending of the substrate S, which would have been bent such that the center is curved vertically downward due to its own weight when it was only supported by the multiple support members 41, is eliminated or reduced.

[0021] Here, when separated from the substrate S, the pressing member 71 overlaps with the substrate S when viewed in a direction intersecting the film-forming surface of the substrate S, and is located farther from the substrate S than the attraction surface of the electrostatic chuck 31 (see, for example, FIG. 2). The shaft member 72 is disposed on the outside of the substrate S and to the side of the electrostatic chuck 31 when viewed in a direction intersecting the film-forming surface of the substrate S. The electrostatic chuck 31 is provided with a recess 31b into which the pressing member 71 retreats in order to move the pressing member 71 away from the substrate S.

[0022] The film forming apparatus 1 also includes a control device 90 for controlling the operations of the film forming source 20 and the various mechanisms described above. The control device for controlling the various devices is a known technique, and therefore a detailed description thereof will be omitted. However, the control device 90 includes a processor such as a CPU, a storage device such as a semiconductor memory or a hard disk, and an input / output interface.

[0023] <Film formation method> In particular, the film forming method using the film forming apparatus 1 will be described with reference to Figures 2 to 12. Figures 2, 3, 5 to 12 show a portion of Figure 1 in which various mechanisms are provided near the ceiling of the chamber 10. Figure 4 shows the positional relationship of the substrate S, the multiple support members 41, and the multiple pressing members 71 in the order of operation as viewed from above.

[0024] First, the mask M is transported into the chamber 10, and the mask M is placed on the mask stage 54 by the third lifting mechanism. Then, the substrate S is transported into the chamber 10 by the hand unit 80 of the transport robot, and the substrate S is placed on the multiple support members 41 of the second lifting mechanism 40 (see FIG. 4(a)). As a result, the multiple support members 41 support the periphery of the surface of the substrate S on the film formation side (see FIGS. 2 and 4(b)). This is the supporting step. At this time, the substrate S is bent such that the center is curved vertically downward due to its own weight.

[0025] After the supporting step, the fifth lifting mechanism 70 lowers the multiple pressing members 71, and the multiple pressing members 71 press the periphery of the substrate S from the side opposite to the film-forming side of the substrate S (pressing step). As a result, as shown in Fig. 3 and Fig. 4(c), the multiple supporting members 41 and the multiple pressing members 71 sandwich the periphery of the substrate S. becomes horizontal, and the bending of the substrate S, which had been bent so that the center was curved vertically downward due to its own weight, is eliminated or reduced.

[0026] Here, in this embodiment, the multiple pressing members 71 are configured to press positions on the substrate S directly behind each of the support regions formed by the multiple support members 41. However, in this embodiment, the pressing members 71 are not provided to correspond to all of the support members 41, but are provided to correspond to only some of the support members 41. The reason for this will be explained.

[0027] The inventors of the present application have found that when a substrate is supported by a plurality of support members 41, the amount of deformation caused by the weight of the substrate S differs in each support region of the plurality of support members 41. Specifically, the inventors have found that in a substrate S having a rectangular planar shape, the amount of deformation is greatest in a support region near the center of a long side among the four sides, and the amount of deformation is also large in a support region near the center of a short side. If all support regions are pressed by a plurality of pressing members 71 with the same pressing force, the stress acting on the substrate S will be higher in regions where the substrate S has a larger amount of deformation. This may cause adverse effects such as damage to the substrate S.

[0028] Therefore, in this embodiment, a configuration is adopted in which the pressing members 71 are not provided in regions where the deformation amount of the substrate S is large, and the pressing operation is not performed by the pressing members 71. More specifically, as shown in Fig. 4(c), a configuration is adopted in which the pressing members 71 are not provided in four locations near the center of the long sides and one location in the center of the short sides, and the pressing members 71 are provided only in the other locations.

[0029] By employing the above configuration, it is possible to prevent excessive stress from acting on the substrate S, and to prevent damage to the substrate S. In this manner, in this embodiment, the pressing action of the multiple pressing members 71 can eliminate or reduce the bending of the substrate S without adversely affecting the substrate S.

[0030] In this embodiment, as described above, in the region where the deformation amount of the substrate S is large, the pressing member 71 is not provided, and the pressing operation by the pressing member 71 is not performed. However, a configuration in which the pressing operation by the pressing member 71 is performed with a weaker force in the region where the deformation amount of the substrate S is large compared to the region where the deformation amount is small can also be adopted. That is, a configuration in which the pressing members 71 press the second region where the deformation amount of the substrate S due to the weight of the substrate S is smaller than the first region when the substrate S is supported by the multiple support members 41 more strongly than the first region. That is, as described above, each support region by the multiple support members 41 has a first region where the deformation amount of the substrate S due to the weight of the substrate S is large when the substrate S is supported by the multiple support members 41, and a second region where the deformation amount is smaller than the first region. Then, in order to prevent the stress acting on the substrate S from becoming too large, a configuration in which the pressing members 71 press the second region (support region near the end of each side) more strongly than the first region (support region near the center of each side) can be adopted. Therefore, a configuration in which the pressing members 71 apply a weak pressure to the first region may also be adopted. As described above, in this embodiment, the pressing members 71 do not press the first region. In addition, in this embodiment, the pressing members 71 are not disposed at positions that overlap the first region in a direction intersecting with the film-forming side surface of the substrate S.

[0031] After the pressing step, a moving step is performed in which the substrate S is moved relatively to the adsorption position by the electrostatic chuck 31. In this embodiment, the lifting operation of the plurality of support members 41 by the second lifting mechanism 40 and the lifting operation of the plurality of pressing members 71 by the fifth lifting mechanism 70 are performed in synchronization with each other, so that the substrate S is lifted and brought into contact with the electrostatic chuck 31. (See Figure 5.)

[0032] Then, after the moving step, a pressure releasing step is performed in which the pressure by the pressing members 71 is released. Specifically, the fifth lifting mechanism 70 raises the multiple pressing members 71, and these multiple pressing members 71 are retracted to the recesses 31b provided in the electrostatic chuck 31, respectively (see FIG. 6). After this pressure releasing step, the substrate S is attracted to the electrostatic chuck 31 (attraction step). That is, an attracting voltage is applied to the electrode 31a provided in the electrostatic chuck 31, so that the substrate S is attracted to the electrostatic chuck 31 by electrostatic attracting force. Note that, after the moving step, a pressure releasing step in which the pressure by the pressing members 71 is released may be performed after the substrate S is attracted to the electrostatic chuck 31 (attraction step).

[0033] In this manner, the plurality of support members 41 support the peripheral edge of the substrate S at least either before or after the substrate S is attracted to the electrostatic chuck 31 serving as an attracting member. Then, the plurality of pressing members 71 press the peripheral edge of the substrate S from the side opposite to the film formation side of the substrate S, whereby the bending of the substrate S is eliminated or reduced, and then the substrate S is attracted to the electrostatic chuck 31.

[0034] After the substrate S is attracted to the electrostatic chuck 31, an alignment operation is performed to align the substrate S and the mask M. Various known methods can be adopted for the alignment operation to align the substrate S and the mask M, but a representative example will be described here. Generally, in order to perform the alignment, alignment marks (not shown) are provided on the substrate S and the mask M, respectively. Then, the marks on both are photographed by a camera C fixed to the chamber 10, and the amount of misalignment between the two is determined. Then, the horizontal position of at least one of the substrate S and the mask M is adjusted so that the misalignment is eliminated (usually, the amount of misalignment falls within a threshold value). In order to achieve high-precision alignment in a short time, rough alignment, which roughly aligns the substrates, and fine alignment, which highly aligns the substrates, are generally performed. In the rough alignment, a camera C with a low resolution but a wide field of view is used, and in the fine alignment, a camera C with a narrow field of view but a high resolution is used. Furthermore, with regard to the above-mentioned alignment marks, separate marks are usually used for rough alignment and fine alignment.

[0035] Specifically, after the substrate S is attracted to the electrostatic chuck 31, the electrostatic chuck 31 and the substrate S are lowered together by the first lifting mechanism 30, so that the substrate S and the mask M are in contact with each other (see FIG. 7). In this state, the control device 90 determines the amount of misalignment between the substrate S and the mask M based on the photographing information obtained from the camera C. Thereafter, the electrostatic chuck 31 and the substrate S are raised together by the first lifting mechanism 30, so that the substrate S is slightly separated from the mask M (see FIG. 8). In this state, rough alignment is performed. That is, in this embodiment, the mask adjustment mechanism 50 adjusts the mask stage 54 in the horizontal direction (X, Y, and θ directions) based on the amount of misalignment, thereby performing rough alignment between the substrate S and the mask M.

[0036] After the rough alignment is performed, the electrostatic chuck 31 and the substrate S are lowered together again by the first lifting mechanism 30, so that the substrate S is in contact with the mask M. Then, fine alignment is performed in the same order as the rough alignment. In general, fine alignment is repeated until the amount of misalignment between the substrate S and the mask M falls within a threshold range. Here, the case has been described in which the substrate S and the mask M are in contact with each other, the amount of misalignment between them is determined, and then the substrate S and the mask M are separated to perform rough alignment and fine alignment. However, the electrostatic chuck 31 and the substrate S can be lowered together by the first lifting mechanism 30, so that the substrate S and the mask M are slightly separated from each other, the amount of misalignment between them is determined, and the rough alignment and fine alignment can be performed in that state.

[0037] After the fine alignment is completed, the magnetic attraction member 61 is lowered by the fourth lifting mechanism 60. As a result, the mask M is attracted to the magnetic attraction member 61 via the substrate S and the electrostatic chuck 31. As a result, the substrate S and the mask M are fixed in contact with each other (see FIG. 9). Thereafter, the film formation source 20 forms a thin film on the surface (film formation surface) of the substrate S in the desired pattern (openings) formed on the mask M. In this manner, a film formation process is performed in which a film is formed after the attraction process.

[0038] Then, after the film formation step, the second lifting mechanism 40 relatively moves the multiple support members 41 to positions for supporting the substrate S (see FIG. 10), and then an adsorption release step is performed in which the electrostatic chuck 31 releases the adsorption of the substrate S. In the adsorption release step, a peeling voltage is applied to the electrode 31a provided on the electrostatic chuck 31. After this adsorption release step, the fifth lifting mechanism 70 lowers the multiple pressing members 71, and a post-film formation pressing step is performed in which the multiple pressing members 71 press the peripheral edge of the substrate S (see FIG. 11).

[0039] After the film formation step, the second lift mechanism 40 moves the plurality of support members 41 relatively to positions for supporting the substrate S (see FIG. 10), and then the fifth lift mechanism 70 lowers the plurality of pressing members 71 to perform a post-film formation pressing step in which the plurality of pressing members 71 press the periphery of the substrate S (see FIG. 11). In this case, after the post-film formation pressing step, an adsorption release step is performed in which the adsorption of the substrate S by the electrostatic chuck 31 is released. When such a step is adopted, the adsorption of the substrate S by the electrostatic chuck 31 is released after the periphery of the substrate S is sandwiched between the plurality of support members 41 and the plurality of pressing members 71. Therefore, when the adsorption of the substrate S is released, it is possible to further prevent the substrate S from falling or from cracking due to bending of the substrate S.

[0040] After these steps, the electrostatic chuck 31 is separated from the substrate S (see FIG. 12), and the substrate S after the film formation is carried out of the chamber 10 by the hand unit 80 of the transfer robot.

[0041] <Electronic device manufacturing method> Next, a description will be given of an example of a method for manufacturing an electronic device using the film forming apparatus of this embodiment. Below, the configuration of an organic EL display device will be shown as an example of an electronic device, and a method for manufacturing the organic EL display device will be illustrated.

[0042] First, the organic EL display device to be manufactured will be described. Fig. 13(a) is an overall view of an organic EL display device 150, and Fig. 13(b) shows the cross-sectional structure of one pixel.

[0043] As shown in FIG. 13(a), a plurality of pixels 152 each including a plurality of light-emitting elements are arranged in a matrix in a display region 151 of an organic EL display device 150. Although details will be described later, each light-emitting element has a structure including an organic layer sandwiched between a pair of electrodes. Note that the pixel here refers to the smallest unit that allows a desired color to be displayed in the display region 151. In the case of the organic EL display device according to this embodiment, the pixel 152 is configured by a combination of a first light-emitting element 152R, a second light-emitting element 152G, and a third light-emitting element 152B that emit light different from each other. The pixel 152 is often configured by a combination of a red light-emitting element, a green light-emitting element, and a blue light-emitting element, but may also be a combination of a yellow light-emitting element, a cyan light-emitting element, and a white light-emitting element, and is not particularly limited as long as it is at least one color.

[0044] Fig. 13(b) is a schematic partial cross-sectional view taken along the line AB in Fig. 13(a). A pixel 152 is composed of a plurality of light-emitting elements, and each light-emitting element includes a first electrode (anode) 154, a hole transport layer 155, any one of light-emitting layers 156R, 156G, and 156B, and an electron transport layer 156C on a substrate 153. The light-emitting layer 152 has a layer 157 and a second electrode (cathode) 158. Among these, the hole transport layer 155, the light-emitting layers 156R, 156G, and 156B, and the electron transport layer 157 correspond to organic layers. In this embodiment, the light-emitting layer 156R is an organic EL layer that emits red light, the light-emitting layer 156G is an organic EL layer that emits green light, and the light-emitting layer 156B is an organic EL layer that emits blue light. The light-emitting layers 156R, 156G, and 156B are formed in patterns corresponding to light-emitting elements (sometimes referred to as organic EL elements) that emit red, green, and blue lights, respectively. The first electrode 154 is formed separately for each light-emitting element. The hole transport layer 155, the electron transport layer 157, and the second electrode 158 may be formed in common for the multiple light-emitting elements 152R, 152G, and 152B, or may be formed for each light-emitting element. In order to prevent the first electrode 154 and the second electrode 158 from shorting out due to foreign matter, an insulating layer 159 is provided between the first electrodes 154. Furthermore, since the organic EL layer deteriorates due to moisture and oxygen, a protective layer 140 is provided to protect the organic EL element from moisture and oxygen.

[0045] 13(b), the hole transport layer 155 and the electron transport layer 157 are shown as single layers, but depending on the structure of the organic EL display element, they may be formed of multiple layers including a hole blocking layer and an electron blocking layer. In addition, a hole injection layer having an energy band structure that can smoothly inject holes from the first electrode 154 to the hole transport layer 155 can be formed between the first electrode 154 and the hole transport layer 155. Similarly, an electron injection layer can be formed between the second electrode 158 and the electron transport layer 157.

[0046] Next, an example of a method for manufacturing an organic EL display device will be specifically described.

[0047] First, a substrate 153 on which a circuit (not shown) for driving the organic EL display device and a first electrode 154 are formed is prepared.

[0048] An acrylic resin is formed by spin coating on the substrate 153 on which the first electrode 154 is formed, and the acrylic resin is patterned by lithography so as to form an opening in the portion where the first electrode 154 is formed, thereby forming an insulating layer 159. This opening corresponds to the light-emitting region where the light-emitting element actually emits light.

[0049] The substrate 153 with the patterned insulating layer 159 is carried into a first organic material film forming apparatus, and the substrate is held by a substrate support table and an electrostatic chuck, and a hole transport layer 155 is formed as a common layer on the first electrode 154 in the display region. The hole transport layer 155 is formed by vacuum deposition. In practice, the hole transport layer 155 is formed to be larger than the display region 151, so no high-resolution mask is required.

[0050] Next, the substrate 153 on which the hole transport layer 155 has been formed is carried into a second organic material deposition apparatus and held by a substrate support table and an electrostatic chuck. The substrate and a mask are aligned, and the substrate is placed on the mask. A red light emitting layer 156R is deposited on the portion of the substrate 153 where a red light emitting element is to be disposed.

[0051] Similar to the formation of the light-emitting layer 156R, a third organic material film formation apparatus is used to form a green light-emitting layer 156G, and a fourth organic material film formation apparatus is used to form a blue light-emitting layer 156B. After the formation of the light-emitting layers 156R, 156G, and 156B is completed, a fifth film formation apparatus is used to form an electron transport layer 157 over the entire display area 151. The electron transport layer 157 is formed as a layer common to the three light-emitting layers 156R, 156G, and 156B.

[0052] The substrate on which the electron transport layer 157 has been formed is moved in a metallic evaporation material deposition apparatus, and a second electrode 158 is deposited.

[0053] Thereafter, the substrate is transferred to a plasma CVD apparatus, where a protective layer 140 is formed, and the organic EL display device 150 is completed.

[0054] If the substrate 153 on which the insulating layer 159 is patterned is exposed to an atmosphere containing moisture or oxygen from the time when it is carried into the film forming apparatus until the film formation of the protective layer 140 is completed, the light emitting layer made of an organic EL material may be deteriorated by moisture or oxygen. Therefore, in this embodiment, the substrate is carried in and out of the film forming apparatus in a vacuum atmosphere or an inert gas atmosphere.

[0055] <Advantages of the film forming apparatus according to this embodiment> According to the film forming apparatus 1 of this embodiment, by providing a plurality of pressing members 71, it is possible to suppress bending of the substrate S before the substrate S is attracted to the electrostatic chuck 31. As a result, the substrate S can be attracted to the electrostatic chuck 31 in a stable state. That is, it is possible to suppress the substrate S from being attracted to the electrostatic chuck 31 in a wavy or partially deformed state. In addition, in a region where the deformation amount of the substrate S due to its own weight is large, the pressing force of the pressing members 71 is weakened or a pressing operation is not performed, thereby suppressing the pressing force acting on the substrate S. As a result, the substrate S can be attracted to the electrostatic chuck 31 in a stable state without adversely affecting the substrate S. [Explanation of symbols]

[0056] 1: Film forming apparatus 10: Chamber 11: Base member 12: Support plate 20: Film forming source 30: First lifting mechanism 31: Electrostatic chuck 31a: Electrode 31b: Recess 32: Holding member 32a: Lifting plate 33: Shaft member 34: Driving source 40: Second lifting mechanism 41: First support member 42: Shaft member 43: Drive source 50: Mask adjustment mechanism 51: Support section 52: Mask table receiving section 53: Magnetic field generating coil box 54: Mask table 55: Magnet 56: Support member 57: Shaft member 58: Drive source 60: Fourth lifting mechanism 61: Magnetic attraction member 62: Holding member 63: Drive source 70: Fifth lifting mechanism 71: Pressing member 72: Shaft member 73: Drive source 80: Hand section 90: Control device C: Camera M: Mask S: Board

Claims

1. An adsorption member for adsorbing a surface of a substrate having a rectangular planar shape with long and short sides opposite to a surface on which a film is to be formed; a plurality of support members that support the periphery of a long side of the surface of the substrate on the film formation side at least either before or after the substrate is attracted to the attraction member; a plurality of pressing members configured to be movable in a direction intersecting the surface of the substrate on the film-forming side, and configured to press the peripheral edge of the long side of the substrate from the side opposite to the surface of the substrate on the film-forming side so as to sandwich the peripheral edge of the long side of the substrate between the pressing members and the plurality of support members; Equipped with A film forming apparatus characterized in that the multiple pressing members press a second region, in which the amount of deformation of the substrate due to its own weight is smaller than that of the first region, more strongly than the first region when the substrate is supported by the multiple support members.

2. An adsorption member for adsorbing a surface of a substrate having a rectangular planar shape with long and short sides opposite to a surface on which a film is to be formed; a plurality of support members that support the periphery of a long side of the surface of the substrate on the film formation side at least either before or after the substrate is attracted to the attraction member; a plurality of pressing members configured to be movable in a direction intersecting a surface of the substrate on a film-forming side, and configured to press positions on the substrate directly behind each of the support regions supported by the plurality of support members; Equipped with each of the support regions has a first region in which the amount of deformation of the substrate due to its own weight is large when the substrate is supported by the plurality of support members, and a second region in which the amount of deformation is smaller than that of the first region; The film forming apparatus, wherein the plurality of pressing members press the second region more strongly than the first region.

3. 3. The film forming apparatus according to claim 1, wherein the plurality of pressing members do not press against the first region.

4. The plurality of pressing members are arranged to contact the first region in a direction intersecting the surface of the substrate on the film-forming side.

3. The film forming apparatus according to claim 1, wherein the film forming apparatus is not disposed in an overlapping position.

5. 3. The film forming apparatus described in claim 1 or 2, characterized in that, when separated from the substrate, the plurality of pressing members overlap the substrate when viewed in a direction intersecting the film forming side surface of the substrate, and are located farther from the substrate than the adsorption surface of the adsorption member.

6. The film forming apparatus according to claim 5, further comprising an axial member for moving the pressing member in a direction intersecting the film forming side surface of the substrate, the axial member being arranged outside the substrate and to the side of the suction member when viewed in the direction intersecting the film forming side surface of the substrate.

7. 6. The film deposition apparatus according to claim 5, wherein the attraction member is provided with a recess into which the pressing member retreats so as to move the pressing member away from the substrate.

8. 3. The film forming apparatus according to claim 1, further comprising a film forming source for forming a thin film on the substrate attracted by the attracting member.

9. A film forming method using the film forming apparatus according to claim 1 or 2, a supporting step in which the plurality of support members support a peripheral edge of the substrate; a pressing step of pressing a peripheral edge of the substrate with the plurality of pressing members after the supporting step; a moving step of relatively moving the substrate to a suction position by the suction member after the pressing step; a pressure release step of releasing the pressure applied by the plurality of pressure members after the moving step; a suction step of suctioning the substrate by the suction member after the pressure releasing step; a film formation step of forming a film after the adsorption step. A film forming method characterized by:

10. A film forming method using the film forming apparatus according to claim 1 or 2, a supporting step in which the plurality of support members support the peripheral edge of a long side of the surface of the substrate on which a film is to be formed; a pressing step of pressing a peripheral edge of a long side of a surface of the substrate on a film formation side by the plurality of pressing members after the supporting step; a moving step of relatively moving the substrate to a suction position by the suction member after the pressing step; a suction step of suctioning the substrate by the suction member after the moving step; a pressure releasing step of releasing the pressure applied by the pressing member after the adsorption step; a film forming step of forming a film after the pressure releasing step. A film forming method characterized by:

11. a suction release step of releasing the suction of the substrate by the suction members after the plurality of support members have moved relatively to positions where the support members support the substrate, after the film formation step; a post-film-deposition pressing step of pressing the peripheral edge of the long side of the surface of the substrate on the film-deposition side with the plurality of pressing members after the adsorption releasing step.

10. The film forming method according to claim 9.

12. a suction release step of releasing the suction of the substrate by the suction members after the plurality of support members have moved relatively to positions where the support members support the substrate, after the film formation step; a post-film-deposition pressing step of pressing the peripheral edge of the long side of the surface of the substrate on the film-deposition side with the plurality of pressing members after the adsorption releasing step. The film forming method according to claim 10 .

13. a post-film-deposition pressing step of pressing a peripheral edge of a long side of a surface of the substrate on a film-deposition side by the pressing members after the plurality of support members have moved relatively to positions for supporting the substrate after the film-deposition step; and a suction release step of releasing the suction of the substrate by the suction member after the post-film-forming pressing step.

10. The film forming method according to claim 9.

14. a post-film-deposition pressing step of pressing a peripheral edge of a long side of a surface of the substrate on a film-deposition side by the pressing members after the plurality of support members have moved relatively to positions for supporting the substrate after the film-deposition step; and a suction release step of releasing the suction of the substrate by the suction member after the post-film-forming pressing step. The film forming method according to claim 10 .