Ultra compact size accelerator, ultra compact size mass spectroscope, and ion implantation device

Abstract

To provide an accelerator and a mass spectroscope, which can be miniaturized and manufactured in a low cost, and are available by anyone.SOLUTION: In each of a mass spectroscope and an accelerator, which is structured by a plurality of substrates containing a first main substrate, a first upper substrate adhered onto an upper face of the first main substrate, and a first lower substrate adhered onto a lower face of the first main substrate, a penetration chamber is formed in the first main substrate, and is penetrated to the lower face of the first main substrate from the upper face of the first main substrate, a vertical direction (a Z direction) of the substrate surface is surrounded by an upper substrate and a lower substrate, and both sides which are a right angle direction with the Z direction and of a charged particle and a traveling direction (an X direction) of a charged particle are surrounded by the first main substrate, and both side faces which have a right angle direction (a Y direction) to the Z direction and the X direction are surrounded by the first main substrate. A central hole of a first main substrate side board, which is incident to the charged particle is opened, and the charged particle is incident to a mass analysis chamber or an acceleration chamber from the central hole formed on the first main substrate side board.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to an accelerator device using an accelerator and a manufacturing method thereof, for example, to a synchrotron, a microtron, a linear accelerator, a mass spectrometer, and an ion implanter. [Background technology]

[0002] Accelerators are used in a variety of fields, such as colliding protons to determine the composition of matter, forming fine patterns using synchrotron radiation generated when the trajectory of accelerated particles is bent, implanting ions into the surface of semiconductors to create active layers or modify surfaces, investigating the composition and structure of materials by mass spectrometry of ions emitted from materials, and treating human diseases, such as by bombarding cancer cells with charged particles to destroy them. However, the motion of accelerated particles is subject to ultra-vacuum (10 -3 ~10 -6 A large-sized cavity (e.g., 500 mm or more) is required for high-speed accelerated particles, and a large-sized electric field generator or magnetic field generator is required to accelerate, bend, and focus the accelerated particles passing through it. For example, electrostatic lenses are used to accelerate charged particles, but since several electrostatic lenses (accelerating electrodes) must be precisely parallel to precisely align the holes through which the charged particles pass, relatively large-sized electrodes (e.g., hole size 20 mm or more in diameter, electrode size 300 mm or more in diameter) are required, and these must be placed in an ultra-vacuum cavity. Therefore, the vacuum system is large, and a large and high-performance vacuum pump must be used. Furthermore, since the magnetic field generator cannot be made large enough to fit into the cavity (vacuum line), and there are side walls surrounding the cavity, the distance to the target charged particles becomes long (e.g., 500 mm or more), so a large magnetic field generator is required. Even if such a large magnetic field generator is made smaller by using electromagnets made of superconducting material, the cooling system becomes larger, so the size of the entire magnetic field generator remains almost the same. In recent years, there have been plans to build the International Linear Collider (ILC) in Japan, but the construction would cost over 1 trillion yen, and its maintenance costs would be 50 billion yen per year, so the decision to build it has not been made.

[0003] Furthermore, despite recent calls for food safety, it is difficult for individuals to easily and quickly find out what substances are contained in food and drinking water. Individuals have no way of understanding the extent to which environmental contamination of soil and other areas caused by the Fukushima nuclear accident is close to them. People often become contaminated with radiation or poisons without realizing it, and by the time they realize it, the situation has become serious. Current equipment is large and heavy, and there are no precision analytical devices that can be carried around. Moreover, the equipment is difficult to obtain due to its high cost. Crimes have become more complex and it takes a long time to identify the cause and perpetrator, but many cases can be solved quickly if analysis is done quickly at the crime scene. For example, accidents and crimes caused by illegal drugs have become a problem in recent years, but the reason that crackdowns on drug dealers are not keeping up is because the drugs cannot be seized at the scene. For this reason, there is a demand for measuring devices that can perform accurate and precise analysis on the spot. In fields such as archaeology and environmental science, where scientific research is carried out through field surveys, the availability of portable, highly accurate mass spectrometry would dramatically advance research. Furthermore, inexpensive, compact equipment would enable the analysis of large numbers of samples in a short period of time. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent Publication No. 2003-036996 [Patent Document 2] Tokuhei 5-36902 Summary of the Invention [Problem to be solved by the invention]

[0005] Conventional accelerators use large electric field generators and magnetic field generators to accelerate, bend, and focus charged particles. The technology to precisely align them has become quite advanced, and accelerators are made by hand, so it is impossible to mass-produce them cheaply and quickly. In addition, we provide a mass spectrometer that is ultra-compact, lightweight, and portable, and can perform measurements easily and quickly on-site. Moreover, the price is significantly cheaper than conventional products, and the measurement accuracy is equal to or higher than conventional products. Specifically, we use semiconductor and MEMS technology to fabricate a high-performance, high-precision, ultra-compact mass spectrometer that has a sample supply unit, ionization unit, extraction electrode unit, mass analysis unit (double focusing type), and ion detection unit on a 4- to 8-inch substrate (substrates larger than this size are also acceptable). Since it is ultra-compact, lightweight, portable, and capable of on-site analysis, it can be used to quickly measure radioactive elements such as 137Cs on-site and analyze food and drinking water at home. Since the cost is 1 / 10 to 1 / 100 of conventional models, it is necessary to realize an era in which each person can have a mass spectrometer and create a safe and secure society. [Means for solving the problem]

[0006] In the present invention, a through-chamber formed in a semiconductor substrate such as a Si substrate is sealed above and below with an insulating substrate such as a glass substrate or a quartz substrate, the through-chamber serves as a passageway for charged particles such as accelerated ions, and within the through-chamber, components necessary for an acceleration device, mass spectrometer, etc., such as an extraction electrode, an acceleration cavity, a quadrupole electrode, and a quadrupole trap, are formed using an LSI process. Specifically, the present invention has the following features. (1) The present invention relates to a mass spectrometer that includes a plurality of substrates including a first main substrate, a first upper substrate attached to the upper surface of the first main substrate, and a first lower substrate attached to the lower surface of the first main substrate. The mass spectrometer chamber is a through chamber formed in a first main substrate, penetrating from the upper surface of the first main substrate to the lower surface of the first main substrate; the upper substrate and the lower substrate are surrounded in a direction perpendicular to the substrate surface (Z direction), both sides perpendicular to the Z direction and in the direction of travel of the charged particles (X direction) are surrounded by the first main substrate side plates, and both sides perpendicular to the Z direction and the X direction (Y direction) are surrounded by the first main substrate; the first main substrate side plate into which the charged particles are incident has a central hole, and the charged particles are incident into the mass analysis chamber through the central hole formed in the first main substrate side plate; The first main substrate is an insulating substrate, a semiconductor substrate, a conductive substrate, or a laminated substrate thereof; The upper and lower substrates are glass substrates, quartz substrates, plastic substrates, alumina substrates, AlN substrates, ceramic substrates, polymer substrates, or laminated substrates thereof; When the main substrate is an insulating substrate, it is a glass substrate, a quartz substrate, a plastic substrate, an alumina substrate, an AlN substrate, a ceramic substrate, a polymer substrate, or a laminated substrate thereof; When the main substrate is a semiconductor substrate, it is a Si substrate, a SiC substrate, a C substrate, a GaAS substrate, an InP substrate, a GaN substrate, a CdS substrate, a binary compound semiconductor, a ternary compound semiconductor, or a laminate substrate thereof; When the main substrate is a semiconductor substrate, when it is a conductive substrate, it is characterized in that it is a substrate made of Cu, Al, Ti, Zn, Fe, an alloy containing these metals, or a laminated substrate of these metals.

[0007] (2) In the present invention, the mass spectrometry chamber is a quadrupole mass spectrometry chamber, Two quadrupole electrodes are attached or formed on the lower surface of the upper substrate, and two quadrupole electrodes are attached or formed on the upper surface of the lower substrate, Contact wiring (upper substrate contact wiring) formed on the upper substrate that connects to two quadrupole electrodes arranged on the lower surface of the upper substrate, and electrodes and wiring (upper substrate upper surface electrodes and wiring) formed on the upper surface of the upper substrate that connects to the upper substrate contact wiring, The lower substrate has contact wiring (lower substrate contact wiring) formed on the lower substrate, which is connected to two quadrupole electrodes arranged on the upper surface of the lower substrate, and electrodes / wiring (lower substrate lower surface electrodes / wiring) formed on the lower substrate, which are connected to the lower substrate contact wiring, A mass spectrometer characterized in that a high frequency voltage and / or a direct current voltage is applied from the upper electrode / wiring and the lower electrode / wiring, Among the two quadrupole electrodes arranged on the lower surface of the upper substrate and the two quadrupole electrodes arranged on the upper surface of the lower substrate, the distance between two quadrupole electrodes that are not adjacent to each other is approximately the same, and the midpoints between the electrodes are approximately the same; Of the two quadrupole electrodes arranged on the lower surface of the upper substrate and the two quadrupole electrodes arranged on the upper surface of the lower substrate, the distance between any two adjacent quadrupole electrodes is approximately the same.

[0008] (3) The present invention is characterized in that a second main substrate is attached on or above an upper substrate (first upper substrate), and a second upper substrate (second upper substrate) is further attached on the second main substrate, a through-chamber (second through-chamber) is formed in the second main substrate above the through-chamber (first through-chamber) penetrating from the second upper substrate to the first upper substrate, an opening is provided in a part of the first upper substrate between the first through-chamber and the second through-chamber, the opening is formed between two quadrupole electrodes arranged on the lower surface of the first upper substrate, electrodes and wiring formed on the first upper substrate connecting to the quadrupole electrodes arranged on the lower surface of the first upper substrate are connected to wiring (second wiring) formed on the side of the second through-chamber, the second wiring is connected to electrodes and wiring formed on the lower surface of the second upper substrate, the electrodes and wiring formed on the lower surface of the second upper substrate are connected to contact wiring (second upper substrate contact wiring) formed on the second upper substrate, and the second upper substrate contact wiring is connected to electrodes and wiring (second upper electrodes and wiring) formed on the second upper substrate, A third main substrate is attached to or below the lower surface of the lower substrate (first lower substrate), and a second lower substrate (second lower substrate) is further attached to the lower surface of the third main substrate, and a through chamber (third through chamber) penetrating from the second lower substrate to the first lower substrate is formed in the third main substrate below the through chamber (first through chamber), and an opening is provided in a part of the first lower substrate between the first through chamber and the third through chamber, and the opening is formed between two quadrupole electrodes arranged on the upper surface of the first lower substrate, the electrodes and wiring formed on the lower surface of the first lower substrate, which connect to the quadrupole electrodes arranged on the upper surface of the first lower substrate, are connected to wiring (third wiring) formed on the side surface of the third through-chamber, the third wiring is connected to the electrodes and wiring formed on the upper surface of the second lower substrate, the electrodes and wiring formed on the upper surface of the second lower substrate are connected to contact wiring (second lower substrate contact wiring) formed on the second lower substrate, and the second lower substrate contact wiring is connected to the electrodes and wiring (second lower substrate electrode and wiring) formed on the lower surface of the second upper substrate, A mass spectrometer characterized in that a high frequency voltage and / or a direct current voltage is applied from the second upper electrode / wiring and the second lower electrode / wiring, the second upper substrate and the second lower substrate are a glass substrate, a quartz substrate, a plastic substrate, an alumina substrate, an AlN substrate, a ceramic substrate, a polymer substrate, or a laminate substrate thereof; When the second main substrate and the third main substrate are insulating substrates, they are glass substrates, quartz substrates, plastic substrates, alumina substrates, AlN substrates, ceramic substrates, polymer substrates, or laminated substrates thereof; When the second main substrate and the third main substrate are semiconductor substrates, they are Si substrates, SiC substrates, C substrates, GaAS substrates, InP substrates, GaN substrates, CdS substrates, binary compound semiconductors, ternary compound semiconductors, or laminated substrates thereof; When the second main substrate and the third main substrate are semiconductor substrates, when they are conductive substrates, they are characterized by being made of Cu, Al, Ti, Zn, Fe, alloys containing these metals, or laminated substrates of these.

[0009] (4) The present invention provides a mass spectrometer characterized in that the mass spectrometry chamber is a quadrupole mass spectrometry chamber, one quadrupole electrode is disposed on the upper surface of an upper substrate attached to the upper part of the mass spectrometry chamber, one quadrupole electrode is disposed on the lower surface of a lower substrate attached to the lower part of the mass spectrometry chamber, and one quadrupole electrode is disposed in each of left and right through-chambers formed in a main substrate provided adjacent to the mass spectrometry chamber, The left and right through-chambers formed in the main substrate adjacent to the mass spectrometry chamber are characterized in that a substrate side wall is present between the mass spectrometry chamber and the through-chamber; The quadrupole electrodes are rods attached to predetermined locations of the upper substrate, the lower substrate, and the main substrate; The quadrupole electrodes are conductive film electrodes laminated on the upper or lower substrate by a CVD method, a PVD method, a plating method, an electroforming method, a screen printing method, a squeegee method, a spin coating method, a dispensing method, or a combination of these methods and processed into a predetermined shape; a mass spectrometry apparatus characterized in that the mass spectrometry chamber is a quadrupole mass spectrometry chamber, and two quadrupole electrodes are disposed on the lower surface of an upper substrate attached to the upper part of the mass spectrometry chamber, the surface facing the mass spectrometry chamber, and two quadrupole electrodes are disposed on the upper surface of a lower substrate attached to the lower part of the mass spectrometry chamber, the surface facing the mass spectrometry chamber; A through-chamber (second through-chamber) is formed above an upper substrate (first upper substrate) on which two quadrupole electrodes are attached or formed, a second upper substrate is attached to an upper portion of the second through-chamber, and a portion of the first upper substrate between the mass spectrometry chamber (first through-chamber) and the second through-chamber is removed, so that the pressures of the first through-chamber and the second through-chamber are substantially the same; The device is characterized in that a further through-chamber (third through-chamber) is formed below a lower substrate (first lower substrate) on which two quadrupole electrodes are attached or formed, a second lower substrate is attached to the bottom of the third through-chamber, and a portion of the first lower substrate between the mass analysis chamber (first through-chamber) and the third through-chamber is removed, so that the pressures in the first through-chamber and the third through-chamber are approximately the same. (5) The present invention is characterized in that the mass spectrometry chamber includes one quadrupole electrode (first quadrupole electrode) attached to or formed on the lower surface of an upper substrate, one quadrupole electrode (second quadrupole electrode) attached to or formed on the upper surface of a lower substrate, one quadrupole electrode (third quadrupole electrode) attached to or formed on the upper or lower surface of a substrate on one side of the mass spectrometry chamber, the portion of which extends in the Y direction within the mass spectrometry chamber, and one quadrupole electrode (fourth quadrupole electrode) attached to or formed on the upper or lower surface of a substrate on the other side of the mass spectrometry chamber, the portion of which extends in the Y direction within the mass spectrometry chamber, the upper substrate has contact wiring (first upper substrate contact wiring) connected to the first quadrupole electrode and an electrode / wiring (first upper substrate electrode / wiring) on ​​the upper surface thereof connected to the first contact wiring; the lower substrate has contact wiring (first lower substrate contact wiring) connected to the second quadrupole electrode and an electrode / wiring (first lower substrate electrode / wiring) connected to the second contact wiring on its underside; The side substrate on which the third quadrupole electrode is attached or formed has wiring connecting to the third quadrupole electrode, and the wiring is connected to wiring formed on the side of the main substrate, and the wiring formed on the side is further connected to wiring formed on the upper substrate or lower substrate, and the wiring is further connected to contact wiring formed on the upper substrate or lower substrate (second upper substrate contact wiring or second lower substrate contact wiring), and the second upper substrate contact wiring or second lower substrate contact wiring is further connected to an electrode / wiring (second upper substrate electrode / wiring or second lower substrate electrode / wiring) formed on the upper surface of the upper substrate or the lower surface of the lower substrate.

[0010] (6) The present invention is characterized in that a through-chamber (second through-chamber) is further formed above the upper substrate (first upper substrate), a second upper substrate is attached to the upper portion of the second through-chamber, and a part of the first upper substrate between the mass spectrometry chamber (first through-chamber) and the second through-chamber is removed, and the pressures of the first through-chamber and the second through-chamber are substantially the same; A through-chamber (third through-chamber) is formed below the lower substrate (first lower substrate), a second lower substrate is attached to the bottom of the third through-chamber, and a part of the first lower substrate between the mass spectrometry chamber (first through-chamber) and the third through-chamber is removed, so that the pressures of the first through-chamber and the third through-chamber are approximately the same; The mass spectrometry chamber is a quadrupole mass spectrometry chamber, and in the mass spectrometry chamber, A quadrupole electrode (first quadrupole electrode) attached or formed on the lower surface of the upper substrate and a quadrupole electrode (third quadrupole electrode) attached or formed on the upper surface of the lower substrate, contact wiring (upper substrate contact wiring) formed on the upper substrate, which is connected to a quadrupole electrode (first quadrupole electrode) disposed on the lower surface of the upper substrate, and electrodes and wiring (upper substrate upper surface electrodes and wiring) formed on the upper surface of the upper substrate, which are connected to the upper substrate contact wiring; a contact wiring (lower substrate contact wiring) formed on the lower substrate which is connected to a quadrupole electrode (third quadrupole electrode) disposed on the upper surface of the lower substrate, and an electrode / wiring (lower substrate lower surface electrode / wiring) formed on the lower substrate which is connected to the lower substrate contact wiring, The main substrate has quadrupole electrodes (a second quadrupole electrode and a fourth quadrupole electrode) formed on two side surfaces in the Y direction, the second quadrupole electrode and the fourth quadrupole electrode have contact wiring formed on the upper substrate and / or the lower substrate, and electrodes and wiring formed on the upper surface of the upper substrate and / or the lower surface of the lower substrate (upper substrate upper surface electrodes and wiring and / or lower substrate lower surface electrodes and wiring); A high frequency voltage and / or a direct current voltage is applied from the upper surface electrodes and wiring of the upper substrate and the lower surface electrodes and wiring of the lower substrate.

[0011] (7) The present invention is characterized in that the second quadrupole electrode and the fourth quadrupole electrode are conductive films laminated in a through-hole formed in a main substrate, and a part of the conductive film is a plating film; The mass spectrometry chamber is a magnetic field application type, characterized in that a magnetic field is generated perpendicular to the substrate surface of the main substrate by one or more coils arranged on the upper side of an upper substrate attached to the upper part of the main substrate forming the mass spectrometry chamber and / or one or more coils arranged on the lower side of a lower substrate attached to the lower part of the main substrate forming the mass spectrometry chamber, thereby changing the trajectory of the charged particles; The mass spectrometry chamber is a magnetic field application type, characterized in that a magnetic field is generated perpendicular to the substrate surface of the main substrate by electromagnets arranged on the upper side of an upper substrate attached to the upper part of the main substrate forming the mass spectrometry chamber and / or on the lower side of a lower substrate attached to the lower part of the main substrate, thereby changing the trajectory of the charged particles; The one or more coils arranged on the upper side of the upper substrate and / or the lower side of the lower substrate are formed on the second main substrate by lamination, the charged particles are emitted from the charged particle extraction chamber or the charged particle acceleration chamber to the mass analysis chamber, a substrate side wall plate (front substrate side wall plate) having a central hole is disposed between the charged particle extraction chamber or the charged particle acceleration chamber and the mass analysis chamber, and the charged particles are emitted to the mass analysis chamber through the central hole of the front substrate side wall plate; The charged particles leaving the mass analysis chamber are detected in an ion detection chamber, the ion detection chamber being a through-chamber formed in a main substrate, a substrate side wall plate (rear substrate side wall plate) having a central hole is disposed between the mass analysis chamber and the ion detection chamber, and the charged particles are emitted to the ion detection chamber side through the central hole of the rear substrate side wall plate, The charged particles are bent in a 360-degree direction by a magnetic field, and a plurality of ion detection chambers are arranged in a 360-degree area.

[0012] (8) The present invention is characterized in that the mass analysis chamber is a double-focusing type to which an electric field application type is further added, and the region through which the charged particles pass in the electric field application type is a through chamber (electric field application type through chamber) formed in a main substrate, including a sector-shaped through chamber (sector-shaped region through chamber) whose upper surface (Z direction) is surrounded by the upper substrate, whose lower surface (Z direction) is surrounded by the lower substrate, and whose side surface (Y direction) is surrounded by the side surface of the main substrate, and the X direction of the electric field application type through chamber is surrounded by a substrate side wall plate having a central hole, and the charged particles enter through the central hole of one of the substrate side wall plates, and the trajectory of the charged particles is bent in the electric field application type through chamber, and exits through the central hole of the other substrate side wall plate, and the electric field application type through chamber is characterized in that electrodes are formed on both sides of the main substrate facing each other, with a central trajectory of radius R0, a central angle α, and a certain distance d0 from the central trajectory, and the charged particles are bent by the electric field generated by the voltage applied to the electrodes formed on both sides, The side electrode in the electric field application type penetration chamber is characterized in that a plating film is further laminated on a conductive film laminated by a CVD method or a PVD method, The contact wiring connected to the side electrode is formed on an upper substrate attached to the upper surface of the electric field application type through-hole chamber and connected to the electrodes and wiring formed on the upper surface of the upper substrate, and / or formed on a lower substrate attached to the lower surface of the electric field application type through-hole chamber and connected to the electrodes and wiring formed on the lower surface of the lower substrate.

[0013] (9) The through chamber (ICR chamber) into which the charged particles enter and undergo cyclotron motion is surrounded by a substrate side wall plate (substrate side wall plate for extraction electrode) having a central hole which is the entrance of the charged particles from the ion source, a substrate side wall (substrate side wall for trap electrode) which is in the direction of travel of the charged particles and faces the substrate side wall plate for the extraction electrode, with which the charged particles undergoing cyclotron motion collide, an upper substrate attached to the top of the ICR chamber, a lower substrate attached to the bottom of the ICR chamber, and two substrate side walls (substrate side wall for receiver electrode) which are approximately parallel to the direction of travel of the charged particles, the surface of the substrate side wall plate for the extraction electrode is formed with a conductive film electrode which serves as an extraction electrode that draws the charged particles from the central hole into the ICR chamber, the surface of the substrate side wall for the trap electrode is formed with a conductive film electrode to which a voltage for trapping the charged particles is applied, and the upper substrate and the lower substrate are formed with conductive film electrodes to which a voltage for exciting the charged particles is applied. In the ICR chamber, a magnetic field is applied parallel to the direction from the extraction electrode to the trap electrode, which is the direction of travel of the charged particles. The coil wiring for generating the magnetic field is formed in close contact with the upper substrate and the lower substrate, and is further formed in close contact with the outer side surface of the main substrate, or is formed inside the main substrate, the upper substrate, and the lower substrate; A support substrate is attached onto the upper substrate, a second upper substrate is attached onto the support substrate, a support substrate is attached onto the lower substrate, and a second lower substrate is attached onto the support substrate; the coil wiring for generating the magnetic field is formed in close contact with the upper substrate and the lower substrate, and is further formed in close contact with an outer side surface of the main substrate; Furthermore, the electrode wirings connecting the extraction electrode, trap electrode, two opposing ion excitation electrodes, and two opposing receiver electrodes in the ICR chamber are formed on the upper substrate and / or the lower substrate, and are present in a space surrounded by the upper substrate, the support substrate, and the second upper substrate, and / or are present in a space surrounded by the lower substrate, the support substrate, and the second lower substrate, and further, these electrode wirings are connected to electrode wirings formed on the second upper substrate and / or the second lower substrate, and the electrodes connecting to the coil are connected to electrode wirings formed on the second upper substrate and / or the second lower substrate.

[0014] (10) The charged particle generation chamber for generating charged particles includes two through-chambers (charged particle generation chambers 1 and 2) formed in a main substrate, the upper part of which is attached to the upper substrate and the lower part of which is attached to the lower substrate, the charged particle generation chamber 1 and the charged particle generation chamber 2 being adjacent chambers separated by a substrate side wall plate (first substrate side wall plate) having a central hole, a sample plate inserted through an opening opened in the upper substrate is placed in the charged particle generation chamber 1, a laser beam is irradiated from the opening opened in the upper substrate to the sample attached to the sample plate, the sample is decomposed into particles, and the decomposed particles (decomposed particles) enter the charged particle generation chamber 2 through the central hole of the substrate side wall plate, and charged particles are generated by irradiating the decomposed particles present in the charged particle generation chamber 2 with one ionization beam selected from laser light, electron beam, synchrotron radiation, and X-ray from the outside of the upper substrate or the lower substrate; Next to the charged particle generation chamber 2 is an extraction electrode / acceleration chamber separated by a substrate side wall plate (second substrate side wall plate) having a central hole. The extraction electrode and acceleration chamber are through-holes formed in the main substrate, with the upper part attached to the upper substrate and the lower part attached to the lower substrate. On the inner surface of the charged particle generation chamber 2, conductive film electrodes are formed on the upper and lower substrates, and / or on the side surfaces of the side wall plate of the first substrate, and / or on the side surfaces of the side wall plate of the second substrate, and / or on the side surfaces of the side walls of the other two substrates; The conductive film electrode is connected to a contact wiring formed on the upper substrate and / or the lower substrate, and the contact wiring is further connected to a conductive film electrode / wiring formed on the outer surface of the upper substrate and / or the lower substrate, The charged particles having the same polarity as the voltage applied to the conductive film electrode are attracted to the extraction electrode / acceleration chamber by the extraction electrode arranged in the extraction electrode / acceleration chamber through a central hole in a side wall plate of the second substrate, a mass spectrometer characterized in that the charged particles entering the extraction electrode / acceleration chamber exit the extraction electrode / acceleration chamber and enter a mass analysis chamber; In the charged particle generation chamber 1, the back surface of the sample plate is placed in close contact with the side surface of the substrate side wall, the substrate side wall is provided with a central hole, and the central hole is further connected to a cavity in the thickness direction of the main substrate which is connected to an opening in the upper substrate or lower substrate, and a vacuum is drawn through the opening in the upper substrate or lower substrate, so that the sample plate is adsorbed to the side surface of the substrate side wall.

[0015] (11) In the present invention, the charged particle generation chamber for generating charged particles includes two through-chambers (charged particle generation chambers 1 and 2) formed in a main substrate whose upper portion is attached to an upper substrate and whose lower portion is attached to a lower substrate, and the charged particle generation chamber 1 and the charged particle generation chamber 2 are adjacent chambers separated by a substrate side wall plate (first substrate side wall plate) having a central hole; The sample plate is inserted through an opening in the upper substrate and placed in the charged particle generation chamber 1. In the charged particle generation chamber 1, the back surface of the sample plate is placed in close contact with the side surface of the substrate side wall, the substrate side wall is provided with a central hole, and the central hole is connected to a cavity in the thickness direction of the main substrate which is connected to an opening in the upper substrate or the lower substrate, and a vacuum is drawn from the opening in the upper substrate or the lower substrate, so that the sample plate is adsorbed to the side surface of the substrate side wall, a conductive film is formed on the side surface of the side wall of the substrate, the conductive film formed on the side surface of the side wall of the substrate is connected to a conductive film formed on the surface of the upper substrate and / or the lower substrate on the side of the charged particle generation chamber 1, the conductive film is further connected to a contact wiring formed on the upper substrate and / or the lower substrate, and the contact wiring is further connected to a conductive film electrode wiring formed on the outer surface of the upper substrate and / or the lower substrate, A voltage is applied to the sample plate, which is a conductor, from the conductive film electrode wiring. A laser beam is irradiated onto the sample attached to the sample plate through an opening in the upper substrate, whereby the sample is decomposed into particles to generate charged particles; Charged particles with the same sign as the charge on the sample plate fly out of the sample plate, a substrate side wall plate (third substrate side wall plate) having a central hole in a direction facing the sample plate is arranged, a conductive film is formed on the surface of the third substrate side wall plate, the conductive film formed on the surface of the third substrate side wall plate is connected to a conductive film formed on the surface of the upper substrate and / or lower substrate facing the charged particle generation chamber 1, the conductive film is further connected to a contact wiring formed on the upper substrate and / or lower substrate, and the contact wiring is further connected to a conductive film electrode wiring formed on the outer surface of the upper substrate and / or lower substrate; A voltage opposite to the voltage applied to the sample plate is applied to the conductive film formed on the surface conductor of the third substrate side wall plate from the conductive film electrode wiring, drawing out the charged particles that have come out of the sample plate, The charged particles pass through a central hole formed in the third substrate sidewall plate and then pass through a central hole in the first substrate sidewall plate to enter the charged particle generation chamber 2, On the inner surface of the charged particle generation chamber 2, conductive film electrodes are formed on the upper and lower substrates, and / or the side surfaces of the first substrate side wall plate, and / or the side surfaces of the second substrate side wall plate, and / or the side surfaces of the other two substrate side walls, and / or the inner surface of the central hole of the first substrate side wall plate; The conductive film electrode is connected to a contact wiring formed on the upper substrate and / or the lower substrate, and the contact wiring is further connected to a conductive film electrode / wiring formed on the outer surface of the upper substrate and / or the lower substrate, The voltage applied to the conductive film electrode has the same sign as the charged particles, and by adjusting the voltage, the charged particles are converged and enter the adjacent chamber through a central hole in a substrate side wall plate (second substrate side wall plate) that separates the charged particle generation chamber 2 from the adjacent chamber; The mass spectrometer is characterized in that the charged particles that pass through the central hole of the second substrate side wall plate enter a mass analysis chamber.

[0016] (12) In the present invention, an upper substrate is attached to the upper surface of a main substrate, and a lower substrate is attached to the lower surface of the main substrate, and a through chamber formed in the main substrate is used as an ionization chamber, and the main substrate has a central hole connected to the ionization chamber, and the central hole is connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate that leads to an opening (a sample introduction opening) in the upper substrate or the lower substrate, a conductive film (second conductive film) is formed on the inner surface of the central hole, a conductive film (first conductive film) is formed on the inner surface of the ionization chamber, the first conductive film and the second conductive film are connected by a conductive film formed on the side of the ionization chamber main substrate, and the first conductive film is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate, A sample liquid or a sample gas is introduced from a sample introduction opening, passes through the vertical hole and the central hole, and is introduced into the ionization chamber as a spray gas at an outlet to the ionization chamber; This is an ionization method characterized in that a voltage is applied to the conductive film formed on the inner surface of the central hole by applying a voltage from an outer electrode formed on the upper substrate and / or the lower substrate, thereby ionizing the gas (spray gas) sprayed out at the outlet of the ionization chamber. (13) In the present invention, an upper substrate is attached to the upper surface of a main substrate, and a lower substrate is attached to the lower surface of the main substrate, and a through chamber formed in the main substrate is used as an ionization chamber, and the main substrate has a central hole connected to the ionization chamber, and the central hole is connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate that leads to an opening (a sample introduction opening) in the upper substrate or the lower substrate, Parallel plate conductive film electrodes are formed on the upper and lower parts of the inner surface of the central hole, or parallel plate conductive film electrodes are formed on the two side surfaces of the inner surface of the central hole, and each parallel plate conductive film electrode is connected to a conductive film formed on an upper substrate and a lower substrate in the ionization chamber through a conductive film formed on the side surface of the inner surface of the ionization chamber, and is further connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate, A sample liquid or a sample gas is introduced from a sample introduction opening, passes through the vertical hole and the central hole, and is introduced into the ionization chamber as a spray gas at an outlet to the ionization chamber; This is an ionization method characterized in that a high-frequency voltage is applied to a conductive film formed on the inner surface of the central hole by applying a high-frequency voltage from an outer electrode formed on the upper substrate and / or the lower substrate, thereby ionizing the gas (spray gas) ejected at the outlet of the ionization chamber.

[0017] (14) The present invention provides a mass spectrometer characterized in that a recess and an opening surrounding a part of the periphery of an ionization chamber are formed in a main substrate, an upper substrate and / or a lower substrate, and a cooling or heating medium is passed through the recess to cool or heat the ionization chamber and / or the central hole, The ionization chamber is heated using a part of the conductive film formed on the upper substrate and / or the lower substrate. The ionization chamber is heated using a part of the conductive film formed in the central hole, A conductive film electrode is provided on the side wall of the substrate facing the extraction electrode chamber or on the side wall of the substrate, and a voltage of the same sign as that of the ions is applied to the conductive film electrode, thereby pushing the ions out into the extraction electrode chamber. (15) In the present invention, an upper substrate is attached to the upper surface of a main substrate, and a lower substrate is attached to the lower surface of the main substrate. One through-chamber formed in the main substrate is used as an ionization chamber, and a heating chamber, which is a through-chamber formed in the main substrate, is provided next to the ionization chamber. The ionization chamber and the heating chamber are either separated by a substrate side wall plate having a central hole (second central hole), or the ionization chamber and the heating chamber are the same through-chamber and there is no substrate side wall plate separating them. a central hole (first central hole) connected to the heating chamber, the first central hole being connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate which is connected to an opening (sample introduction opening) in the upper substrate or the lower substrate; a conductive film (second conductive film) is formed on the inner surface of the central hole, a conductive film (first conductive film) is formed on the inner surface of the heating chamber, the first conductive film and the second conductive film are connected by a conductive film formed on the side of the heating chamber main substrate, and the first conductive film is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate, A sample liquid or sample gas is introduced from the sample introduction opening, passes through the vertical hole and the central hole, and is introduced into the heating chamber as a spray gas at an outlet to the heating chamber; a voltage is applied from an outer electrode formed on the upper substrate and / or the lower substrate, and a current is passed through the first conductive film to heat the first conductive film, thereby heating the heating chamber; This is an ionization method characterized in that a spire electrode is disposed on an upper substrate and / or a lower substrate in an ionization chamber, the spire electrode is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate, and a voltage is applied to the outer electrode to cause discharge at the spire electrode and ionize the heated spray gas.

[0018] (16) The present invention provides a mass spectrometer characterized in that a recess and an opening surrounding a part of the periphery of an ionization chamber are formed in a main substrate, an upper substrate and / or a lower substrate, and a cooling or heating medium is passed through the recess to cool or heat the ionization chamber and / or the central hole, The ionization chamber is heated using a part of the conductive film formed on the upper substrate and / or the lower substrate, The ionization chamber is heated using a part of the conductive film formed in the central hole. A conductive film electrode is provided on the side wall of the substrate facing the extraction electrode chamber or on the side wall of the substrate, and a voltage of the same sign as that of the ions is applied to the conductive film electrode, thereby pushing the ions out into the extraction electrode chamber. (17) In the present invention, an upper substrate is attached to the upper surface of a main substrate, and a lower substrate is attached to the lower surface of the main substrate, and a through-chamber formed in the main substrate is used as an ionization chamber; a central hole (first central hole) connected to the ion chamber, the first central hole being connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate which is connected to an opening (sample introduction opening) in the upper substrate or the lower substrate; a sample liquid is introduced through an opening for introducing the sample, and passes through a vertical hole and a central hole to an outlet of an ionization chamber, where a matrix is ​​formed; and the matrix is ​​irradiated with a laser or a fast atomic beam from the outside through an opening formed in an upper substrate or a lower substrate, whereby molecules in the matrix are ionized; An upper substrate is attached to the upper surface of the main substrate, and a lower substrate is attached to the lower surface of the main substrate, and a through chamber formed in the main substrate is used as an ionization chamber; a central hole (first central hole) connected to the ion chamber, the first central hole being connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate which is connected to an opening (sample introduction opening) in the upper substrate or the lower substrate; The sample liquid is introduced through the sample introduction opening, passes through the vertical hole and the central hole, and a matrix is ​​formed at the outlet to the ionization chamber. This ionization method is characterized in that a laser or fast atom beam chamber is placed next to the ionization chamber, and the matrix is ​​irradiated with light from the laser or fast atom beam chamber, resulting in ionization of molecules in the matrix.

[0019] (18) The present invention is characterized in that the through-chamber formed in the main substrate adjacent to the ionization chamber is an extraction electrode chamber, the extraction electrode chamber and the ionization chamber are separated by a substrate side wall plate having a central hole (second central hole), a conductive film electrode is formed on the side surface of the substrate side wall facing the substrate side wall plate, a voltage having the same sign as the ions is applied to the conductive film, and the generated ions are pushed out by the conductive film electrode and emitted into the extraction electrode chamber through the second central hole in the substrate side wall plate, The present invention is characterized in that a recess and an opening surrounding a part of the periphery of the ionization chamber are formed in the main substrate, the upper substrate and / or the lower substrate, and a cooling or heating medium is passed through the recess to cool or heat the ionization chamber and / or the central hole, A conductive film is formed on the inner surface of the central hole and / or the inner surface of the through chamber, and an electric current is passed through the conductive film to generate heat, thereby heating the central hole and / or the through chamber. (19) In the present invention, an upper substrate is attached to the upper surface of a main substrate, and a lower substrate is attached to the lower surface of the main substrate. A ring electrode is formed on the main substrate. A through-chamber formed in the center of the ring electrode is an ion trap chamber. An upper electrode (ion trap upper electrode) formed on the upper substrate is disposed on the upper portion of the ion trap chamber, and a lower electrode (ion trap lower electrode) formed on the lower substrate is disposed on the lower portion of the ion trap chamber. The ring electrode is a conductive film (ring conductive film electrode) formed in a ring shape on the main substrate, and the ring conductive film electrode is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate; the ion trap upper electrode and the ion trap lower electrode are connected to outer electrodes formed on the upper substrate and the lower substrate through contact wiring formed on the upper substrate and the lower substrate, the ring electrode is a main substrate having a central hole, and is disposed between the ion trap chamber and the ionization chamber or the extraction electrode / acceleration electrode chamber which is one of the through-chambers disposed adjacent to the ion trap chamber, and is also disposed between the ion detection chamber which is the other of the through-chambers disposed adjacent to the ion trap chamber and the ion trap chamber, one central hole connecting from the ionization chamber to the ion trap chamber and the other central hole connecting from the ion trap chamber to the ion detection chamber, This ion trap mass spectrometer is characterized in that, by applying a predetermined voltage to the ring conductive film electrode, the upper ion trap electrode, and the lower ion trap electrode, ions that enter the ion trap chamber from the ionization chamber or the extraction electrode / acceleration electrode chamber through a central hole connected to the ion trap chamber are trapped in the ion trap chamber, and the trapped ions are further ejected from the ion trap chamber through a central hole connected to the ion detection chamber and detected.

[0020] (20) In the present invention, an upper substrate is attached to the upper surface of a main substrate, and a lower substrate is attached to the lower surface of the main substrate. A ring electrode is formed on the main substrate. A through-chamber formed in the center of the ring electrode is an ion trap chamber. An upper electrode (ion trap upper electrode) formed on the upper substrate is disposed on the upper portion of the ion trap chamber, and a lower electrode (ion trap lower electrode) formed on the lower substrate is disposed on the lower portion of the ion trap chamber. The ring electrode is a conductive film (ring conductive film electrode) formed in a ring shape on the main substrate, and the ring conductive film electrode is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate; The ion trap upper electrode and the ion trap lower electrode are connected to outer electrodes formed on the upper substrate and the lower substrate through contact wiring formed on the upper substrate and the lower substrate, and the ring electrode is a main substrate having a central hole; one of the through-chambers is disposed between the ionization chamber or the extraction electrode / acceleration electrode chamber, which is disposed above the ion trap chamber, and the ion trap chamber, and the other of the through-chambers is disposed between the ion detection chamber, which is disposed next to the ion trap chamber, and the ion trap chamber, one of the central holes connects the ionization chamber to the ion trap chamber, and the other central hole connects the ion trap chamber to the ion detection chamber, This ion trap mass spectrometer is characterized in that, by applying a predetermined voltage to the ring conductive film electrode, the upper ion trap electrode, and the lower ion trap electrode, ions that enter the ion trap chamber from the ionization chamber or the extraction electrode / acceleration electrode chamber through a central hole connected to the ion trap chamber are trapped in the ion trap chamber, and the trapped ions are further ejected from the ion trap chamber through a central hole connected to the ion detection chamber and detected.

[0021] (twenty one) The present invention is an acceleration device including a main substrate having a plurality of through-chambers penetrating from the upper surface to the lower surface, an upper substrate attached to the upper surface of the main substrate, a lower substrate attached to the lower surface of the main substrate, and a substrate side wall plate having a central hole separating the through-chambers, wherein the acceleration device is characterized in that charged particles pass through the through-chambers and the central hole of the substrate side wall plate; The accelerator includes a charged particle generating mechanism and a linear acceleration mechanism, and the charged particle generating mechanism and the linear acceleration mechanism are formed in a through chamber; The electrodes and wiring formed in the through-hole are conductive films laminated by one or more methods selected from a CVD method, a PVD method, a plating method, and an electroforming method, and are connected to outer electrodes formed on the upper substrate and / or the lower substrate through contact wiring formed on the upper substrate and / or the lower substrate; The linear acceleration mechanism is characterized in that it is configured by arranging a plurality of electrodes (substrate side wall plate electrodes) on which a conductive film is formed on a substrate side wall plate having a central hole, and accelerates or decelerates (focuses) the charged particles by applying a static voltage or a high-frequency voltage to the substrate side wall plate electrodes; The acceleration device further has a deceleration (focusing) mechanism, which is configured by arranging multiple electrodes (substrate side wall plate electrodes) having a conductive film formed on a substrate side wall plate having a central hole, and is characterized in that the charged particles are decelerated (focused) by applying a voltage to the substrate side wall plate electrode that is opposite to the voltage of the charged particles.

[0022] (twenty two) The present invention further includes a deceleration (focusing) mechanism, the deceleration (focusing) mechanism being performed by a quadrupole magnet, The quadrupole magnet is characterized in that electromagnets are arranged vertically (perpendicular to the substrate surface) from the outside of a substrate having a through-chamber formed in the substrate as a passage for charged particles, and electromagnets are arranged on both sides horizontally (perpendicular to the vertical direction) from the outside of a substrate having a through-chamber formed in the substrate as a passage for charged particles; In the case where the electromagnet is arranged in the horizontal direction, the substrate area is cut at the position where the electromagnet is to be arranged, and the electromagnet is arranged in the opening, The cutting method is laser dicing or high-pressure liquid jet dicing; The coils are disposed in the main board on both sides of the through chamber, The coil is characterized in that a conductive film (through-hole wiring) is formed in a through-hole that penetrates the upper and lower substrates and the main substrate, wiring is formed to connect the through-hole wiring in the upper and lower substrates to form coil wiring, and electrodes at both ends of the coil are formed on the upper substrate and / or the lower substrate. (twenty three) The present invention is characterized in that a through-chamber (a through-chamber for coil placement) is formed on both sides of a through-chamber (a through-chamber for focusing charged particles), and a coil is inserted into the through-chamber for coil placement to place the coil on both sides of the through-chamber for focusing charged particles; The coil is arranged by inserting the coil attached to the support substrate into the coil arrangement through-hole; The coil is disposed in the upper and lower portions of the coil disposing through-chamber, The coil is disposed in close contact with or in close proximity to the upper and lower substrates; This method is characterized in that the coil is disposed by attaching a substrate on which a coil is formed (coil-formed substrate) to the upper substrate and the lower substrate. Effect of the Invention

[0023] In the present invention, the functions required for an accelerator or mass analyzer are formed in a substrate at once using LSI or MEMS processes, so that the relative positions of each functional part (for example, acceleration electrodes) can be formed extremely accurately. Moreover, the distance between the electrodes and the path through which the charged particles pass can be precisely formed on the order of mm or μm, so that the size becomes extremely small. For example, when the distance between the electrodes becomes small, the electric field strength increases, and the acceleration and deceleration of the charged particles can be efficiently controlled. In addition, the frequency of the high frequency supplied to the electrodes can be increased, so that greater acceleration can be achieved over a short distance. Furthermore, since each functional part can be fabricated in a batch, the manufacturing cost is dramatically reduced.

[0024] When the present invention is applied to a mass spectrometer, it has not been reported that a 4-inch to 8-inch substrate {diameter 100mm to 200mm, thickness 3mm or less (Si substrate 2mm, glass substrate 0.3mm x 2), thickness of 8 inches or more is also possible} as in the present invention is used to fabricate a minute sample supply section, ionization chamber, extraction electrode / acceleration chamber, electric field chamber, magnetic field chamber, and ion detection chamber (these are called functional sections). In addition, no ideas for patents or the like have been discovered. Furthermore, it has not been reported that all of these have been realized on the same substrate, and this invention has novelty, inventive step, and superiority.

[0025] This mass spectrometer is ultra-compact (main body: 6-inch wafer size (50 cm 3) or less, weight 130g or less} and because it is manufactured in one batch, the manufacturing cost can be realized to be less than 100,000 yen {main body: size 6 inch wafer}. Conventional products with the same performance are 50cm x 50cm x 50cm or more and 20kg or more, so the size (volume) is 1 / 2500 or less, the weight is 1 / 100 or less, and the price is 1 / 20 or less, and there is a sufficient advantage. (Of course, larger sizes are also possible.) Since each functional part can be manufactured in a batch with high accuracy (1μm or less), it can be manufactured much more accurately than other parts assembly methods, and the detection accuracy can be expected to be the same or higher than that of conventional methods. Since the present invention is ultra-small and light, it can be carried, so on-site observation is possible. However, conventional products are almost impossible to carry, so on-site observation is extremely difficult, and in this respect, it has a great advantage.

[0026] Furthermore, this mass spectrometer uses a coil made on a substrate in the magnetic field chamber. The coil is placed by aligning the substrates, so the placement precision is very good at less than 10 μm. Furthermore, the coil is small at 1 mm to 10 mm, so the overall size does not increase. A magnetic field chamber using such a substrate coil is highly novel and inventive. It is small in price and size, and has high precision, making it far superior to conventional products. The coil is also used in the electron ionization method. This is also highly novel and inventive. [Brief description of the drawings]

[0027] [Figure 1] FIG. 1 is a diagram showing an example of an embodiment of a microaccelerating device of the present invention. [Diagram 2] FIG. 2 is a diagram showing an example of a particle generating device 11 of the present invention. [Diagram 3] FIG. 3 is a diagram showing the structure of a linear accelerator for charged particles. [Figure 4] FIG. 4 is a diagram showing an example of a charged particle accelerating tube using a high-frequency waveguide. [Diagram 5] FIG. 5 is a diagram showing an acceleration device in which a plurality of charged particle accelerators according to the present invention are connected together. [Figure 6]FIG. 6 is a diagram showing an example of a method for manufacturing a charged particle accelerator device of the present invention. [Figure 7] FIG. 7 is a diagram showing an example of a method for manufacturing a charged particle accelerator according to the present invention, illustrating a process from formation of a substrate side wall to patterning of a conductive film. [Figure 8] FIG. 8 is a diagram showing a method for producing a charged particle acceleration device in which a glass substrate 251 is sandwiched between an upper substrate (main substrate 201U, upper substrate 202) and a lower substrate (main substrate 201B, lower substrate 203) and attached by electrostatic bonding. [Figure 9] FIG. 9 is a diagram showing another embodiment of the extraction electrode structure. [Figure 10] FIG. 10 is a diagram showing an accelerating cavity in which a plurality of substrate sidewall electrodes each having a central hole are arranged. [Figure 11] FIG. 11 shows an embodiment of a method for producing an electromagnet (coil). [Figure 12] FIG. 12 is a diagram showing a method for producing a high-performance coil into which a core with a high relative magnetic permeability μ is inserted. [Figure 13] FIG. 13 is a diagram showing a method for manufacturing the coils disposed on the upper and lower substrates. [Figure 14] FIG. 14 is a diagram showing a quadrupole electromagnet structure produced using the coil (electromagnet) of the present invention. [Figure 15] FIG. 15 is a diagram showing charged particle passage cavities such as the bending electromagnets 25, 30, 34, and 37 in FIG. 1 and electromagnets arranged therein. [Figure 16] FIG. 16 is a diagram in which the ultra-compact accelerator 10-1 having the circular accelerator (synchrotron) 8-1 shown in FIG. 1 is connected to a circular accelerator 8-2 which is one size larger, and shows a double synchrotron (or a two-cycle synchrotron). [Figure 17] FIG. 17 is a schematic diagram showing a case where the circular accelerator 8 is divided and fabricated on a substrate. [Figure 18] FIG. 18 is a diagram showing a microwave ion source of the present invention. [Figure 19] FIG. 19 is a diagram showing one embodiment of the mass spectrometry of the present invention. [Figure 20] FIG. 20 is a diagram showing an example of a method for producing a quadrupole mass spectrometry chamber. [Figure 21] FIG. 21 is a diagram for explaining an example of a structure and method for attaching a quadrupole electrode to a substrate. [Figure 22] FIG. 22 is a diagram for explaining another example relating to a structure and method for attaching a quadrupole electrode to a substrate. [Diagram 23] FIG. 23 is a diagram showing a method for producing the quadrupole electrode of the present invention. [Figure 24] FIG. 24 is a diagram illustrating a method for attaching the quadrupole electrode 407 to the substrate. [Diagram 25] FIG. 25 is a diagram for explaining a method for disposing a quadrupole electrode inside a mass spectrometry chamber using a thin film formation method. [Figure 26] FIG. 26 is a diagram showing an octapole electrode structure. [Figure 27] FIG. 27 is a schematic diagram showing a mass spectrometer of the present invention using a magnetic sector type having a through-chamber serving as a mass analysis chamber in which a magnetic sector acts on a main substrate. [Figure 28] FIG. 28 is a diagram showing a mass spectrometer in which ions subjected to a force by a magnetic field in a mass spectrometer chamber are detected by ion detectors arranged in multiple directions. [Figure 29] FIG. 29 is a diagram showing a double focusing mass spectrometer of the present invention. [Diagram 30] FIG. 30 is a diagram showing one design guideline for a single focusing sector magnetic field analyzer and a double focusing sector magnetic field analyzer. [Diagram 31] FIG. 31 is a diagram showing the FTICR of the present invention. [Diagram 32] FIG. 32 is a diagram showing a structure in which the size of the ICR chamber is increased. [Diagram 33] FIG. 33 shows an FTICR equipped with the coil of the present invention. [Diagram 34] FIG. 34 shows an FTICR in which a coil according to the present invention is arranged differently from that shown in FIG. [Diagram 35] FIG. 35 is a diagram showing an alternative ionization method to that described in FIG. [Diagram 36] FIG. 36 is a diagram illustrating another embodiment of the ionization method. [Figure 37] FIG. 37 is a diagram illustrating atmospheric pressure chemical ionization. [Figure 38] FIG. 38 is a diagram showing a method for making an ionization chamber having a spire electrode. [Figure 39] FIG. 39 is a diagram showing an embodiment in which continuous flow (CF)-FAB ionization, which is a type of fast atom bombardment (FAB), is applied to the present invention. [Diagram 40] FIG. 40 is a diagram showing a method for producing an ion trap mass spectrometer. [Diagram 41] FIG. 41 shows an ion trap mass spectrometer in which charged particles pass through an end cap electrode 609 . [Diagram 42] FIG. 42 is a diagram showing an ion detection chamber in which a large number of dynodes using the present invention are arranged. [Diagram 43] FIG. 43 is a diagram showing one embodiment of a method for producing the parallel plate electrode shown in FIG. [Diagram 44] FIG. 44 is a diagram showing an embodiment in which the central hole of the present invention is applied to a channel-type secondary electron multiplier. [Diagram 45] FIG. 45 is a schematic diagram (cross-sectional view perpendicular to the substrate surface) of a mass spectrometer of the present invention. [Figure 46] FIG. 46 shows (a) a double focusing mass analyzer (electric field section+magnetic field section) (plan view) and (b) a simultaneous detection method for multiple ions (plan view). [Figure 47] FIG. 47 is a diagram showing the electron ionization unit (cross-sectional view). [Figure 48] FIG. 48 is an image of the final product (main body only) of the present invention. [Figure 49] FIG. 49 is a diagram showing an ion trap mass spectrometer formed in a vertical direction. [Figure 50] FIG. 50 shows a method or apparatus for forming a pattern on the sidewall of a substrate through-hole or substrate recess. [Figure 51]FIG. 51 is a diagram showing a through-hole sidewall etching apparatus. [Figure 52] FIG. 52 is a diagram showing a method for producing a through chamber of an accelerator or mass spectrometer of the present invention using a mold. [Figure 53] FIG. 53 is a diagram showing an exposure device in which light emitters are arranged on the front and rear surfaces. [Figure 54] FIG. 54 is a diagram showing a method for forming a central hole using a mold ingot method. [Figure 55] FIG. 55 is a diagram showing a method of forming a central hole in a substrate cut at a position approximately half the height of the central hole in the portion where the central hole is to be formed. [Figure 56] FIG. 56 shows (a) a method for polishing the inner wall of a through hole to give it a smooth and flat surface, and (b) and (c) a method for transferring a pattern to the inner wall of a through hole. [Figure 57] FIG. 57 is a plan view of the synchrotron type substrate-type ion implantation apparatus of the present invention, viewed parallel to the substrate surface. [Figure 58] FIG. 58 is a diagram (plan view) showing a synchrotron-type ion implantation device having two circular orbits. [Figure 59] FIG. 59 is an enlarged view (plan view parallel to the substrate) of the state of the connection region between the ion emission line 2143 and the second stage circular orbit 2145. [Figure 60] FIG. 60 is a cross-sectional view of a track connector of an ion implanter stacked in two stages. [Figure 61] FIG. 61 is a diagram showing an example of an RFQ (Radio Frequency Quadruple) type linear accelerator. [Figure 62] FIG. 62 is a diagram showing a method for producing the RFQ type linear accelerator shown in FIG. [Figure 63] FIG. 63 is a diagram showing another acceleration method (IH type) of a linear accelerator. [Figure 64] FIG. 64 is a diagram showing an acceleration method in another linear acceleration chamber. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] The present invention is an accelerator in which a through groove (also referred to as a recess) or a through hole (hereinafter also referred to as a cavity) is formed in a substrate or thin plate (main substrate or first substrate) in the thickness direction, and charged particles such as electrons and ions move at high speed inside the cavity. Above the cavity, a substrate or thin plate (second substrate) is attached to the substrate side walls on both sides of the cavity, and below the cavity, a substrate or thin plate (third substrate) (in the case of a through groove, the bottom surface of the main substrate) is attached under the substrate side walls on both sides of the cavity. Therefore, the cavity is an airtight space sandwiched above and below by the second substrate and the third substrate, and on the sides by the side walls of the first substrate. In a part of the cavity, which is an airtight space, part or all of the side wall of the substrate above, below, and / or on both sides of the cavity is hollowed out (or holes are formed), and gas (air, oxygen, nitrogen, etc.) inside the cavity is evacuated from the hollowed out part or hole (hereinafter also referred to as a vacuum transmission hole), so that the inside of the cavity is in a predetermined low-pressure state (for example, a low-pressure state close to a vacuum).

[0029] In a part of the cavity (or outside the cavity), coils, electromagnets, or permanent magnets are arranged above and / or below the cavity, and the magnetic field created by the coils, etc. causes electrons or ions (hereinafter, charged particles) passing through the cavity to receive a force, which accelerates and / or deflects them. And / or, in a part of the cavity (or outside the cavity), coils are arranged on one side and / or the other side of the cavity, and the magnetic field created by the coils causes charged particles passing through the cavity to receive a force, which accelerates and / or deflects them. Or / and, in a part of the cavity (or outside the cavity), electrodes are arranged above and / or below the cavity, and the electric field created by the electrodes causes charged particles passing through the cavity to receive a force, which accelerates and / or deflects them. And / or, in a part of the cavity (or outside the cavity), electrodes are arranged on one side and / or the other side of the cavity, and the electric field created by the electrodes causes charged particles passing through the cavity to receive a force, which accelerates and / or deflects them.

[0030] A charged particle generating section (chamber) is fabricated in the first substrate, and the charged particles generated in the charged particle generating section can be guided through a cavity (sometimes called a (charged particle) introduction cavity) fabricated in the first substrate to a cavity (sometimes called a (charged particle) acceleration cavity) that can accelerate the charged particles. Alternatively, an external charged particle generating device can be connected to an entrance (sometimes called a (charged particle) (external) introduction cavity entrance) to the outside of the cavity (sometimes called a (charged particle) (external) introduction cavity) fabricated in the first substrate, and the charged particles can be guided through the external introduction cavity to a cavity in the main substrate or an acceleration cavity. The charged particles moving in the acceleration cavity exit to the outside from a charged particle exhaust outlet (sometimes called a (charged particle) exhaust outlet) that connects the first substrate to the outside. The charged particle exhaust outlet and the acceleration cavity are connected through a cavity (sometimes called a (charged particle) exhaust cavity) fabricated in the first substrate. The accelerated charged particles are discharged from a charged particle discharge outlet and can be used for various purposes such as medical use, analysis, product modification, etc. Alternatively, there is no charged particle discharge outlet and the charged particles are subjected to ion analysis in an analysis chamber formed in the main substrate.

[0031] The accelerator of the present invention (sometimes called a substrate accelerator) can be fabricated using photolithography, laser patterning, die forming, punching, or the like, so that the cavity width and depth can be fabricated very accurately with 0.1 mm to 0.5 mm, 0.5 mm to 1.00 mm, 1.0 mm to 10 mm, 1 cm to 2 cm, 2 cm to 10 cm, or 10 cm or more, and linear, polygonal, circular, elliptical, hyperbolic, or other curved shapes can be fabricated with desired dimensions. For example, in the case of a linear shape, a number of linear cavities can be formed in one substrate, and the linear cavities can be cut out in the length direction of the cavities (for example, by dicing), and the cut-out cavities can be connected to each other to fabricate a linear accelerator of any length.

[0032] For example, if the first substrate is a Si substrate, the accelerating cavity width is 5 mm, the accelerating cavity depth is 5 mm, multiple coils (10 mm long) are formed in the first substrate on both sides of the accelerating cavity, 0.5 mm thick glass substrates (second substrate, third substrate) are attached to the first substrate above and below the accelerating cavity, and multiple coils (20 mm long) are arranged above and below the glass substrates, then when the size of the first substrate is 500 mm x 500 mm (or when it is a circular wafer (diameter 500√2=707 mm or more) that can be manufactured into this size), one linear accelerator will be approximately 500 mm long, 15 mm wide, and 6 mm high, and approximately 33 units (each of which is called a unit accelerator) can be obtained from one substrate (the second substrate and third substrate are attached to the first substrate, and coils are arranged above, below, and / or below and to the left and right). Connecting ten of these unit accelerators makes a 5m linear accelerator, so one substrate can produce a 16.5m linear accelerator. Therefore, 61 substrates are needed to make a 1km accelerator.

[0033] In the case of a circular accelerator, in the case of a micro accelerator that can be made with only one substrate, many circular tracks (circular cavities) of different sizes are made, and cavities (sometimes called connecting cavities) that connect between them are made, and the speed is increased stepwise, and the track is moved accordingly, and the charged particles are accelerated to the final speed at the last track (usually the outermost) and released to the outside. In the present invention, since all patterns of cavities, coils, electrodes, etc. can be formed simultaneously, the number of process steps (the number of manufacturing processes) does not change regardless of the number of circular tracks, and the cost is almost the same. For example, when a concentric circular accelerator is made with an initial circular track of 10 mm radius, a cavity width of 5 mm, a size of the next circular track of 25 mm, a size of the next circular track of 40 mm radius, and so on, with the radius increased by 15 mm each time (all cavities have a width of 5 mm, and the spacing between the cavities is 10 mm), 16 circular tracks are made on a 500 mm circular wafer. These are connected in sequence, and acceleration is performed on each circular track. In the first small circular orbit, it moves in a circular motion at a speed of 10 m / sec, in the next circular orbit, it moves at 4 times the speed, and in the nth circular orbit, it moves at 10 x 4 n-1m / sec, the final 16th circular orbit would be 100,000 km / sec, which is 1 / 3 the speed of light. Ultrafast charged particles can be produced from a single wafer.

[0034] If the size of the circular accelerator becomes larger, it can be made by connecting substrates, just like a linear accelerator. For example, if the size of one substrate is 500mm x 500mm and the diameter of the circular accelerator is 1000mm (1m), it is enough to make 1 / 4 circle on four substrates and connect the four 1 / 4 circle substrates. When making a larger circular accelerator, for example, for a 10000mm (10m) circular accelerator, it is enough to connect about 100 substrates of 1000mm x 1000mm.

[0035] The present invention is an accelerator fabricated on a substrate, and is equipped with a cavity such as an acceleration cavity through which charged particles pass, electrodes that generate an electric field for accelerating, decelerating or deflecting the charged particles, and coils and electromagnets that generate a magnetic field for accelerating, decelerating or deflecting the charged particles. Fig. 1 is a diagram showing an example of an embodiment of the micro-compact accelerator of the present invention, which is mounted on a single substrate 9 and has a charged particle generator 11, a linear (type) accelerator 13, various electromagnets 15, 17, 19, 21, 22, 23, 26, 28, 29, 31, 32, 35, 36, deflection electromagnets 25, 30, 34, 37, cavities 12, 14, 16, 18, 20, 24, 27, 33, 38, 40 through which charged particles pass, and a linear accelerator 39. These are just examples, so the ones described here may be omitted, or more may be added, or those with different functions may be added.

[0036] Charged particles generated by the charged particle generator 11 pass through the cavity 12 and are accelerated by the linear accelerator 13, pass through the cavity 14 and have their orbit deflected by the bending electromagnet 15, pass through the cavity 16 and have their orbit deflected and / or focused by the bending electromagnet 17, pass through the cavity 18 and have their orbit deflected by the bending electromagnet 19, pass through the next cavity 20, and enter the storage ring 24, which is a cavity through which charged particles pass in the circular accelerator 8, via the inflector 21. A linear accelerator 42 can be provided midway through the cavity 20 to adjust the speed of the charged particles entering the inflector 21. In addition, other bending electromagnets, acceleration electrodes, deceleration electrodes, linear accelerators, etc. may be provided on the way from the charged particle generator 11 to the inflector 21. In addition, other bending electromagnets, acceleration electrodes, deceleration electrodes, linear accelerators, focusing electromagnets, etc. may be provided midway.

[0037] The charged particles entering the storage ring 24 of the circular accelerator 8 from the inflector 21 are focused by the focusing electromagnets 22 (for the horizontal direction) and 22 (for the vertical direction), deflected and accelerated by the bending electromagnet 25, and enter the next storage ring 27, where they are further accelerated by the RF acceleration cavity 29, focused by the focusing electromagnets 26 (for the vertical direction) and 28 (for the horizontal direction), deflected and accelerated by the bending electromagnet 30, and enter the next storage ring 33, where they are focused by the focusing electromagnets 31 (for the vertical direction) and 32 (for the horizontal direction), deflected and accelerated by the bending electromagnet 34, and enter the next storage ring 38, where they are focused by the focusing electromagnets 35 (for the vertical direction) and 36 (for the horizontal direction), deflected and accelerated by the bending electromagnet 37, and enter the next storage ring 24. In this way, the charged particles continue to rotate while accelerating in the storage rings 24, 27, 33, 38, and when the desired speed and the desired number of charged particles are obtained, they enter a cavity (sometimes called a charged particle discharge cavity) 40 that guides the charged particles to the outside, and are taken out from an outlet 41 of the charged particle discharge cavity 40. A linear accelerator 39 may be provided midway through the charged particle discharge cavity 40 to further accelerate the charged particles. Other bending electromagnets, acceleration electrodes, deceleration electrodes, linear accelerators, focusing electromagnets, etc. may also be provided midway.

[0038] As described above, the storage rings 24, 27, 33, and 38 form a single continuous annular passage. In addition, holes are formed in various cavities at various locations, which are connected to vacuum lines that are further connected to external vacuum pumps, and the pressure in each cavity is reduced to a near-vacuum state. In addition, holes are formed in various cavities at various locations, which allow the introduction of inert gases such as nitrogen, He, and Ar, and the inside of the cavity can be cleaned or purged as necessary.

[0039] As shown in FIG. 1, in the present invention, a particle generator 11 for electrons or ions is also disposed within the main substrate (first substrate) 9. An example of this particle generator 11 is shown in FIG. 2. The particle (ion) generator shown in FIG. 2 is an ion generator having parallel plate electrodes. FIG. 2(a) is a cross-sectional structure perpendicular to the substrate plane (in the substrate thickness direction), and FIG. 2(b) is a plan view of the structure. A cavity 76 that is a plasma generation chamber and a cavity 77 that extracts charged particles such as electrons, protons, and various ions generated in the plasma generation chamber 76 and leads them to an accelerator (13 in FIG. 1) are formed within the main substrate 51, and a second substrate (upper substrate) 53 is attached to the upper surface of the main substrate 51, and a third substrate (lower substrate) 52 is attached to the lower surface of the main substrate 51.

[0040] In the plasma generation chamber 76, a (lower) electrode 54 is formed on a lower substrate 52, and its periphery is covered by laminating an insulating film 55 such as a silicon oxide film (or a silicon nitride film, a silicon oxynitride film). An (upper) electrode 58 is formed on an upper substrate 53, and its periphery is covered (protected) by laminating an insulating film 59 such as a silicon oxide film (or a silicon nitride film, a silicon oxynitride film). These electrodes 54 and 58 are patterned and arranged to face each other, and a second substrate 53 and a third substrate 52 are attached to both the upper and lower surfaces of a main substrate 51. A contact hole is formed in the lower substrate 52, and a contact electrode (conductive film) 56 is formed in the contact hole, and further, an extraction electrode 57 is formed on one surface of the lower substrate 52. A contact hole is also formed in the upper substrate 53, and a contact electrode 60 is formed in the contact hole, and further, an extraction electrode 61 is formed on one surface of the upper substrate 53. These electrodes 57 and 61 are placed on the outside when the upper and lower substrates 52, 53 are attached to the main substrate 51, and a matching circuit 78 and an AC or high-frequency electrode 79 are connected between these electrodes, with one of the electrodes being earthed.

[0041] The upper substrate 53 is provided with a gas inlet 71, gas exhaust holes 72 and 73 for exhausting gas from the plasma generation chamber 76 to reduce its pressure, and a gas exhaust hole 74 for exhausting gas from the cavity 77 on the accelerator side to reduce its pressure. A seal portion 62 is formed on the upper surface of the upper substrate 53 for these gas inlet hole 71 and gas exhaust holes 72, 73, and 74, and a gas inlet line 63 and gas exhaust lines 64, 65, and 66 are connected to this seal portion 62, providing an airtight seal to prevent external gas (such as air) from entering the plasma generation chamber 76 or cavity 77 from the outside. The gas exhaust lines 64, 65 are connected to vacuum pumps 68, 69, and the pressure in the plasma generation chamber 76 is lowered to a predetermined level (for example, 0.1 atm to 0.001 atm). When a high-frequency voltage is applied to the upper and lower electrodes 54 and 58 through the extraction electrodes 57, 61 in this state, the gas is plasma ionized, generating electrons and ions, generating charged particles. For example, when argon gas (Ar) is introduced, Ar+ and electrons are generated. When methane (CH4) gas is introduced, various ions (C-, CH+, CH2+, CH3+, CH4+, etc.) are generated. When arsenic gas (As) is introduced, As+ and electrons are generated.

[0042] Since the inter-electrode distance d1 between the electrodes 54 and 58 is almost the same as the thickness of the main substrate 51 (strictly speaking, the thickness of the main substrate minus the thickness of the upper and lower electrodes), if the thickness of the main substrate is 1 mm, a high electric field of 1 KV / cm can be applied by applying 100 V, making it possible to generate plasma at a low voltage. To apply a higher electric field, other than applying a high voltage, the thickness of the main substrate can be made thinner, or, if the thickness of the main substrate (as a whole) cannot be made thinner, the main substrate can be etched to a predetermined thickness and an electrode can be formed at the bottom thereof in order to reduce the distance d1 only in the portion where the electrode is provided, or a protrusion can be provided on the upper or lower substrate and an electrode can be formed on the protrusion. This protrusion can also be made by attaching another substrate to the upper or lower substrate, and the upper or lower substrate with the protrusion can be attached above and below the main substrate.

[0043] The accelerator side cavity 77 is also connected to the gas exhaust line 66 and is connected to the vacuum pump 70. However, the pressure in the accelerator side cavity 77 is significantly lower (for example, 10 -3 atm~10 -12 atm). Therefore, a part of the plasma generated in the plasma generation chamber 76 is introduced into the accelerator side cavity 77. Also, since the accelerator side cavity 77 is connected to an acceleration cavity, charged particles are attracted to the accelerator side cavity 77. Although the plasma generation chamber 76 is described as being larger than the accelerator side cavity 77, the accelerator side cavity 77 may be larger as long as it has an area in which plasma can be generated. In that case, since the accelerator side cavity 77 has a lower pressure, an opening and closing valve may be provided between the plasma generation chamber 76 and the accelerator side cavity 77, or a part of the space between the plasma generation chamber 76 and the accelerator side cavity 77 may be narrowed. The plasma flow flows in the direction of 80 and enters the accelerator side.

[0044] An extraction electrode 83 may be disposed between the plasma generation chamber 76 and the accelerator side cavity 77 to extract ions generated in the plasma generation chamber 76. The extraction electrode 83 has a structure in which the periphery of the substrate side wall 81 of the main substrate 51 having a central hole 84 is covered with a conductive film 82. As can be seen from the cross-sectional view (elevation view) 2(a) and the plan view 2(b), the substrate side wall 81 of the main substrate 51 is formed to extend around the inner surface of the accelerator side cavity 77, and a central hole 84 is formed in the center. In addition, a conductive film wiring 85-1 is formed on the lower surface of the upper substrate 53 (the upper surface of the inner side surface of the accelerator side cavity 77), and this conductive film wiring 85-1 is connected to the conductive film 82. The contact hole formed in the upper substrate 53 and the conductive film 86 formed therein are connected to the conductive film wiring 85-1, and the conductive film 86 in the contact hole is connected to the outer electrode wiring 87 formed on the upper surface of the upper substrate 53. As a result, a voltage can be applied to the extraction electrode 83 to extract ions and electrons from the outer electrode / wiring 87 .

[0045] A voltage of the opposite charge to the ions to be led to the processing device is applied to the extraction electrode 83 in FIG. 2, but since the extraction electrode 82 in FIG. 2 directly faces the ions, in addition to the ions that enter the central hole 84 and accelerate, many ions collide with the side of the extraction electrode 82, which may result in poor ion extraction efficiency. Therefore, the size of the central hole 84 may be adjusted to make it easier for ions to pass through. For example, the hole size may be the same as that of the accelerator side cavity 77, that is, the substrate side wall 81 is not provided, and only the peripheral electrode 85 of the accelerator side cavity 77 (an annular (rectangular strip) electrode in which the electrode wiring 85-1 on the lower surface of the upper substrate, the side electrode 85-2 on the main substrate 51, the electrode wiring 85-3 on the lower surface of the lower substrate, and the side electrode 85-4 on the main substrate 51 are continuously connected) is provided, or the central hole 84 is provided in the substrate side wall 82, the size of the central hole is changed to an optimal value, and the conductive film 82 is formed on it. Another method is to provide a substrate side wall having a central hole without a conductive film on the ion generation chamber 76 side in front of the extraction electrode 83, thereby blocking the vertical wall electrode on the forward side of the extraction electrode 83 and directing the ions toward the central hole.

[0046] There is another method shown in FIG. 9. FIG. 9 is a diagram showing another embodiment of the extraction electrode structure. FIG. 9(a) is a vertical cross-sectional view, and FIG. 9(b) is a plan cross-sectional view. In FIG. 9, a focusing electrode 89 is present between the ion generating electrodes 54 and 58 and in front of the extraction electrode 83. The substrate side wall 81 of the extraction electrode 83 in FIG. 2 is almost perpendicular to the side surfaces of the upper and lower substrates 53 and 52 and the main substrate 51, but in this embodiment, the substrate side wall is inclined and gradually narrows toward the accelerator side cavity 77-2 (the cavity on the right side (acceleration cavity side) across the substrate side wall 81) and leads to the central hole 84. It may be said that the size of the central hole 84 gradually becomes smaller toward the accelerator side cavity 77-2. Also, when this portion is defined as an entrance portion 88 of the accelerator side cavity 77-2, it can be said that the entrance portion 88 gradually becomes smaller toward the accelerator side cavity 77-2 side. Conversely, it can also be said that the size of the central hole 84 is tapered toward the accelerator side cavity 77-1 (the cavity on the left side (the ion generating electrode side) across the substrate side wall 81). It can also be said that the substrate side wall 51-2 is gradually thicker toward the accelerator side cavity 77-2. Furthermore, as shown in FIG. 9(b), when the outlet of the plasma (ion) generation chamber 76 is larger than the inlet of the accelerator side cavity 77, the outlet portion 48 is formed in a shape that gradually narrows when viewed in a plane. (In the case shown in Figure 2, the outlet size of the plasma (ion) generation chamber 76 and the entrance size of the accelerator side cavity 77 change suddenly, as shown in Figure 2(b).) A conductive film electrode 89 is formed on the inclined main substrate side of the entrance portion 88 of this accelerator side cavity 77, and this conductive film electrode 89 is connected to a conductive film wiring 45 formed on the upper substrate 53 or the lower substrate, and the conductive film wiring 45 is connected to an outer electrode 47 through a contact hole formed in the upper substrate 53 or the lower substrate and the conductive film wiring 46 therein.

[0047] The conductive film electrode 89 is also formed extending to the side surface of the main substrate (inclined in plan view) of the outlet of the plasma (ion) generation chamber 76. A conductive film electrode 82 is formed on a part of the central hole and on the side surface of the substrate side wall 81 of the acceleration device side cavity 77-2, and is connected to the outer electrode 87. Since the conductive film 89 and the conductive film 82 are not connected, different voltages can be applied from the outer electrodes 47 and 87. That is, a voltage with the same charge as the ions is applied to the conductive film 89, so that the ions are converged to the center of the cavity. Also, a voltage with an opposite charge to the ions is applied to the extraction electrode 82, so that the ions are attracted to the extraction electrode 82 and accelerated, and pass through the central hole 84 of the cavity 77-1 and enter the adjacent acceleration cavity 77-2. If the acceleration is weak, an acceleration electrode (electrostatic lens) made of a conductive film laminated on the substrate side wall having a central hole is further provided in the acceleration cavity 77-2 to accelerate the ions. If the ions are accelerated too much, a reverse potential can be applied to make them decelerating electrodes. In the present invention, since a large number of acceleration electrodes and deceleration electrodes can be provided even over a short distance, and an outer electrode can be easily fabricated for each, the ions can pass through the acceleration cavity side cavities 77-1 and 77-2 at a desired speed. In this way, with the structure shown in FIG. 9, the ions are attracted to the accelerator side cavity 77 by the extraction electrode, the ions are converged by the same potential as the ions applied to the exit and entrance parts (i.e., they gather toward the center), and since the exit and entrance parts gradually narrow, few ions are repelled and pushed back even if the exit and entrance parts have the same potential as the ions, so that most of the ions generated in the ion generation chamber 76 (at a potential opposite to that of the extraction electrode) enter the accelerator side cavity 77-2 and proceed further toward the accelerator side because they are accelerated. The tapered conductive film 89 can also be divided into several parts in the direction of ion travel, and different voltages can be applied to each electrode. For example, by gradually weakening the voltage in the direction of ion travel, the electric field applied to the ions can be made constant or gradually weakened. (When viewed in the direction of ion travel, the distance between the ion and the electrode becomes smaller, so that the electric field becomes stronger when the same voltage is applied.) As a result, the ions can be stably sent out in the direction of travel (towards the acceleration cavity 77-2).Alternatively, the ions can be focused and accelerated by selectively applying a focusing voltage and an accelerating voltage to the divided electrodes of the conductive film 89. By dividing the electrodes of the conductive film 89 in this way and applying voltages while individually adjusting them, it becomes possible to efficiently send the ions to the accelerating cavity 77-2 side.

[0048] Alternatively, a large number of ions can be guided to the accelerator cavity 77-2 by applying a potential opposite to that of the ions to the inclined electrode 89 and then applying a higher opposite potential to the extraction electrode. That is, the electric field becomes stronger as the ions 49 move forward, so that the ions 49 gather at the center and move forward.

[0049] Next, the processes of the plasma (ion) generating device, the acceleration cavity side cavity, the extraction electrode, and the acceleration (deceleration) electrode shown in Fig. 2 and Fig. 9 will be described. First, a plasma (ion) generating device having a cavity without a central hole will be described. As the main substrate (first substrate) 51, a conductive substrate (including metals such as Cu, Al, Ti, Zn, etc. and alloys thereof, conductive C (including carbon nanotubes, graphene, etc.), conductive plastic, conductive ceramic, etc.), Si, SiC, C, semiconductors such as compound semiconductors, plastic, glass, quartz, alumina (Al 2 O 3 ), AlN, polymer resin, ceramic, and other insulators, as well as composites of these, can be used. The most suitable substrates for the upper substrate (second substrate) and lower substrate (third substrate) are plastic, glass, quartz, alumina (Al 2 O 3 ), AlN, polymer resin, ceramic, or other insulator, but the same material as the main substrate 51 can also be used.

[0050] A photosensitive film is attached to the main substrate 51 by coating or pasting, and the photosensitive film is patterned by exposure. The photosensitive film may be attached after an insulating film, an etching stopper material, or a film for improving adhesion with the photosensitive film is attached between the main substrate 51 and the photosensitive film. The patterned photosensitive film is used as a mask to etch away the main substrate 51, forming a through-hole that penetrates from the top surface to the bottom surface of the main substrate 51. It is desirable that the side of the small side etching is almost vertical in order to fabricate the through-hole to the correct dimensions, but it does not have to be vertical as long as the side etching can be controlled. When the main substrate is a Si substrate, the surface is oxidized or nitrided, or an insulating film such as a SiO2 film or a SiN film is laminated, and then a photosensitive film sheet is attached, or a resist is applied, and then a suitable heat treatment (pre-baking, etc.) is performed, and a window is opened in the desired portion by exposure. From this window, the insulating film etc. is vertically etched (anisotropic etching), and further, using these as a mask, the window opening is vertically etched (various methods such as anisotropic etching, DRIE, Bosch method, etc.) to create a through chamber. If a conductive film pattern is to be formed in the through chamber, it may be done here. If the main substrate is a semiconductor substrate or a conductive substrate, an insulating film is formed on the surface of the main substrate and the side of the through chamber, and then a conductive film is formed. A photosensitive film is formed on the surface and side of the main substrate 51 by a photosensitive film sheet attachment method, a resist coating method, a photosensitive film electrodeposition method, etc. on the main substrate 51. Next, the photosensitive film patterning is performed on the surface and side of the main substrate 51 by an exposure method (oblique exposure method, using an exposure device with a deep focal depth). Next, using the pattern of this photosensitive film as a mask, the conductive film is etched by a wet etching method or an isotropic dry etching method to form a desired conductive film pattern. After this, if necessary, a protective film of an insulating film is formed on the conductive film pattern. For the portion that will be connected to the conductive film of the upper and lower substrates later, a similar photolithography + etching method is used to open a window in the conductive film at the connection portion. Next, to improve the connection with the conductive film of the upper and lower substrates, the opened portion can be made convex (raised slightly) with the conductive film. This can be done by laminating the conductive film again and using the same photolithography + etching method to leave the conductive film only at the connection portion, or by laminating a metal or the like at the connection portion using a selective CVD method, plating method, etc.

[0051] Conductive film patterns that become electrodes are formed in advance on the upper and lower substrates. When the upper and lower substrates are insulating substrates such as glass substrates, quartz substrates, and plastic substrates, the conductive film can be directly laminated, but it is also possible to laminate the conductive film after laminating an insulating film to improve adhesion. The conductive film is Cu, Al, Ti, W, Mo, Au, Cr, Ni, conductive C, conductive PolySi, conductive plastic, etc., or their alloys, composite films, laminated films, etc. CVD method, PVD method, plating method, coating method, screen printing method, combinations of these, etc. can be used. After laminating the conductive film, a photosensitive film is used to create a photosensitive film pattern by exposure method, etc., and the photosensitive film electrode and necessary wiring are formed using the photosensitive film as a mask. Dry etching or wet etching can be used for etching the conductive film. After forming the conductive film pattern, it is also possible to cover it with an insulating film, etc., to form a protective film. When covered with an insulating film or the like, a window is opened in the conductive film at the connection portion with the conductive film pattern formed on the upper and lower substrates using the same photolithography method + etching method. Next, in order to improve the connection with the conductive film of the upper and lower substrates, the opened portion may be made convex (slightly raised) with the conductive film. As a method for this, a conductive film may be laminated again and the same photolithography method + etching method may be used to leave the conductive film only at the connection portion, or a metal may be laminated at the connection portion by a selective CVD method, plating method, or the like. After that, contact holes and conductive films therein may be formed, and conductive films and electrodes may be formed on the contact holes and other portions. Also, gas introduction holes and openings for vacuum drawing may be provided in the upper and lower substrates. These openings can be made by dry etching or wet etching.

[0052] Next, the upper and lower substrates are attached to the main substrate on which the through-holes and the conductive film wiring pattern are formed while matching the patterns. When connecting the conductive film of the main substrate and the conductive film of the upper and lower substrates, if the conductive film patterns of the main substrate and the conductive film of the upper and lower substrates are formed so that the connection areas of the conductive films overlap, the connection is made easier. A conductive adhesive (including a low melting point solder alloy) is applied to the connection parts of the conductive films to bond them. After bonding, a predetermined heat treatment is performed to ensure the connection. Even if an adhesive is not used, the connection can be ensured by heat treatment around the melting point of the conductive film or a fusion method. If pressure is applied, the conductive films can be connected to each other by heat treatment below the melting point. Other parts can be bonded using a bonding method using an adhesive, a room temperature bonding method, a diffusion bonding method, or a high temperature bonding method. When the main substrate 51 is a semiconductor substrate such as Si or a conductive substrate, and the upper and lower substrates are glass substrates, quartz substrates, alumina substrates, etc., they can be bonded using an anodic bonding method. They can also be connected to the conductive film of the main substrate through contact holes provided in the upper and lower substrates. Whether or not an adhesive is used, after joining, a conductive film can be laminated on the connection part by using selective CVD, plating, or electroforming, using the openings provided in the upper and lower substrates. Furthermore, a conductive film can be laminated on the conductive film part not covered by a protective film, etc., so that a reliable connection can be made. For example, a quartz tube, a glass tube, a heat-resistant plastic tube, a metal tube such as SUS, etc. can be connected to the opening (heat-resistant plastic packing may be interposed at the contact part), and a reactive gas (for example, WF6 gas) can be introduced from there into the through-chamber of the main substrate, and while drawing it from another opening with a pump, the reactive gas is made to flow through the through-chamber of the main substrate, and heat treatment is performed at a predetermined temperature, so that a conductive film (for example, W film) can be selectively laminated on the part where the conductive film is exposed, such as the connection part between the conductive films. Also, by flowing a plating liquid (copper or various solder plating liquid) through those tubes and passing a current from the outer electrode, a plating film can be laminated on the part where the conductive film (copper or various solder plating films) is exposed. If a predetermined heat treatment is then performed, the connection part can be made more reliable.

[0053] In the above, a support substrate is not used in forming the through chamber in the main substrate 51, but the through chamber can be formed using the support substrate. When the substrate deformation occurs due to stress or the like after the through chamber is formed in the main substrate 51, it is preferable to use a support substrate. The support substrate is attached to the main substrate, and the attachment surface with the support substrate and the main substrate surface on the substrate side are patterned with a photosensitive film or the like, and the main substrate is etched to create the through chamber in the main substrate. It is sufficient to etch until the support substrate is reached. If the support substrate is to be removed later, it is preferable to use a softening adhesive or a low melting point metal (alloy) (referred to as adhesive A) to attach the support substrate to the main substrate. After the main substrate and the support substrate are attached, the through chamber is formed in the main substrate by the above-mentioned method. At this time, the support substrate is also etched, but if an etching method with a high selection ratio is used, the etching of the support substrate can be reduced. After that, the insulating film, the conductive film, the protective film, and their patterning are the same, but since the support substrate is to be removed, it is preferable to etch away the film at the connection portion. Next, the upper or lower substrate is attached to the main substrate with an opening, matching the patterns. When using an adhesive (hereinafter referred to as adhesive B), it is necessary to select an adhesive that will not come off or shift due to the temperature at which the support substrate is removed. For example, the hardening temperature T B is the softening temperature (melting point) of adhesive (metal) A, T A After the upper or lower board is attached to the main board, the T A The support substrate can be separated from the main substrate by heat treatment at the above temperatures. Alternatively, adhesive A can be a light-peeling adhesive and adhesive B can be a thermosetting adhesive, and the upper or lower substrate can be bonded with adhesive B, after which the support substrate can be peeled off by light irradiation. The other substrate (upper or lower substrate) is then attached.

[0054] It is also possible to attach an upper or lower substrate instead of a support substrate from the beginning. The upper and main substrates are attached, and the main substrate is patterned and a through-chamber is formed from the opposite side. At this time, it is desirable to set etching conditions with a high selectivity so that the upper substrate is not etched too much. If a pattern such as a conductive film is required on the upper or lower substrate, the pattern is formed on the upper or lower substrate beforehand, and then the substrate is attached to the main substrate. In particular, when the pattern forming surface faces the main substrate, a pattern such as a conductive film is formed on the upper or lower substrate in advance. The pattern surface of the upper or lower substrate is attached to match the pattern surface of the main substrate. The pattern surface of the main substrate may be the through-chamber pattern when a through-chamber is formed in advance, or may be the pattern of the conductive film when a pattern surface of a conductive film is formed on the main substrate. When the through-chamber is formed after the attachment, accurate pattern matching is not required during attachment. After the through-chamber is formed, an insulating film, a conductive film, and a protective film are laminated, and these are patterned. At this time, since electrodes and wiring need to be formed on the upper substrate and / or on the side walls of the through-hole, a photosensitive film pattern is created using a photosensitive sheet method, an electrodeposition resist method, a deep focal exposure method, a rotational exposure method, an oblique exposure method, etc., and a conductive film pattern is formed by wet etching or dry etching. After that, the upper substrate or lower substrate on which the electrode and wiring patterns have been formed is attached to the main substrate.

[0055] As described above, the upper substrate is prepared with the electrode and wiring patterns prepared in advance, and a recess is formed in the main substrate to allow the pattern portion of the upper substrate to escape. The recess of the main substrate is matched with the pattern of the upper substrate, and the upper substrate and the main substrate are attached. After that, a through-hole is formed in the main substrate. At this time, since the electrode and wiring patterns already formed in the upper substrate are formed, the through-hole is formed under conditions that do not etch (are difficult to etch) the electrode and wiring patterns. For example, if the main substrate is Si, Si can be etched at high speed with CF-based gas, but if Al or copper electrodes and wiring are formed in the upper substrate, conditions can be selected that do not etch these almost at all with CF-based gas. After this, an insulating film is formed, and then a conductive film is formed, and then the conductive film can be patterned only on the side of the main substrate. A conductive film is also formed on the upper substrate, but since the upper substrate is not covered with a photosensitive film, the conductive film of the upper substrate can be etched, and the electrodes and wiring of the upper substrate that have already been patterned are not etched because they are covered with an insulating film. The electrodes and wiring on the upper substrate and the conductive film on the main substrate can be connected by forming the insulating film and then patterning it to remove the insulating film from the connection area. The conductive film is then laminated, so connection is fully possible. Alternatively, all (almost all) of the insulating film on the electrode and wiring parts of the upper substrate can be removed. When patterning the conductive film, a pattern can be formed so that it overlaps the electrode and wiring parts of the upper substrate.

[0056] Next, the method for forming the central hole will be described. The main substrate is divided (a main substrate with half the thickness of the main substrate is used, which is called the semi-main substrate), and patterning is performed to form the central hole. At this time, an insulating film or the like may be formed on the main substrate, a film for photosensitive film adhesion, or a film as a mask for an etching stopper (to prevent etching of the main substrate when the resist is scraped off) may be formed. The central hole is formed with that pattern. When a curved shape is desired, side etching of wet etching or dry etching is used. For a vertical pattern, anisotropic etching is performed. Next, patterning is performed to form the through chamber and the substrate side wall (including the central hole). If there is a part that forms a vertical pattern and a part that forms the inclined main substrate side surface as shown in Figure 9 (a), patterning is performed separately. Furthermore, if there are multiple inclination angles, patterning is performed each time, and etching is performed separately as vertical etching, inclined etching 1, inclined etching 2, etc. The same applies when part of the main substrate is left. Basically, a through chamber is formed in the main substrate. As a result, a central hole (also half), a substrate side wall (also half) having a central hole, and a through chamber (also half) are formed in the semi-main substrate. The size of the central hole can also be freely changed by changing the etching conditions. The inclination angle can also be freely selected by changing the etching conditions. The pattern of the outlet part inclined in the planar direction of FIG. 9(b) can also be freely changed by using a mask. Therefore, any desired shape can be created. After this, an insulating film can be formed, a conductive film can be formed, and the conductive film can be patterned. Since the height is half, film formation and patterning are easier. Of course, an insulating film and a conductive film can be formed in the central hole, and they can also be removed by etching. In the present invention, since an LSI process is used, the size of the substrate side wall and the through chamber can be formed very accurately. Although the patterning of the conductive film is difficult in some deep areas of the through chamber, processing can be performed with an accuracy of 1 μm to 10 μm, so there is almost no problem with the accuracy of the accelerator device of the present invention.

[0057] Two identical semi-main substrates are prepared and then attached so that their central holes are aligned. The attachment method can be the same as described above, and if electrostatic anodic bonding is to be performed, a thin glass substrate, quartz substrate, etc. can be used between them. The same size of the through-hole, substrate side wall, central hole, and conductive film can be formed on the necessary parts of the glass substrate, etc., and then attached to the semi-main substrate sequentially or simultaneously. The same is also possible when a support substrate is used as the semi-main substrate. In this case, for example, a method can be taken in which the semi-main substrate is attached to the upper substrate, the support substrate is removed, then the semi-main substrate is attached, the support substrate is removed, and finally the lower substrate is attached. Alternatively, a method can be taken in which the semi-main substrate is attached to the upper substrate, the support substrate is removed, and the semi-main substrate is attached to the lower substrate, the support substrate is removed, and then the semi-substrates are attached to each other. Finally, contact holes, conductive films therein, and outer electrodes can be formed on the upper and lower substrates. Alternatively, these contact holes and outer electrodes can be formed in advance. Furthermore, if you want to make the penetration chamber deeper, you can repeat the above process several times. By making multiple identical pieces at the same time and then stacking and attaching them, you can easily create a penetration chamber with a deep depth without lengthening the process. For example, by stacking main substrates of 0.5mm to 1mm in thickness four times, you can create an accelerator with a penetration chamber of 8mm to 16mm in depth. <Other plasma generation methods>

[0058] Fig. 3 is a diagram showing the structure of a linear accelerator for charged particles. In Fig. 1, it can be used for 13 or 39, and can also be used alone as a linear accelerator. Fig. 3(a) is a cross-sectional structural diagram in the thickness direction (the direction of travel of the acceleration cavity 99, i.e., the direction of travel of the charged particles G) of a substrate (a main substrate 91 to which a second substrate (upper substrate) 92 is attached on the upper surface and a third substrate (lower substrate) is attached on the lower surface), Fig. 3(b) is a plan view parallel to the substrate surface, and Fig. 3(c) is a cross-sectional structural diagram in the thickness direction (the direction of travel of the acceleration cavity 99, i.e., perpendicular to the direction of travel of the charged particles G).

[0059] The acceleration cavity 99 through which the charged particles G pass in the accelerator is formed by attaching the upper part of a through hole (chamber) 99 (width a1) formed in a main substrate (first substrate) 91 (thickness h1) to a second substrate (upper substrate) 92 and the lower part to a third substrate (lower substrate) 93, so that the internal through hole (acceleration cavity) 99 is an airtight space. A large number of annular electrodes 94 (continuous (electrically connected) electrodes formed on the side walls of the through hole 99, the lower surface of the upper substrate 92, and the upper surface of the lower substrate 93) are formed at intervals in the longitudinal direction (the traveling direction of the charged particles) in this acceleration cavity 99. (94-1, 2, ...) For example, the ring-shaped electrode 94-1 has conductive electrodes 94S1 and 94S2 formed on the side walls of a through hole 99 with a depth h1 and a width a1, and further, a conductive electrode 94U is formed on the lower surface of the upper substrate 92, and a conductive electrode 94B is formed on the upper surface of the lower substrate 93. These conductive electrodes 94S1, 94S2, 94U, and 94B are electrically connected and have a length (longitudinal direction of the acceleration cavity 99) k1, and more accurately, a rectangular shape. If the thickness of the conductive electrodes is t1 (assuming that all are constant), the distance b1 between the conductive electrodes 94S1 and 94S2 is a1-2t1, and the distance d4 between the conductive electrodes 94U and 94B is h1-2t1. For example, if ai=1mm, h1=1mm, and the thickness of the conductive film is 10μm, then bi=0.98mm and di=0.98mm.

[0060] A ring-shaped electrode 94-2 having a length k2 is formed adjacent to the ring-shaped electrode 94-1 at a distance j1, and a ring-shaped electrode 94-3 having a length k3 is formed adjacent to the ring-shaped electrode 94-2 at a distance j2, so that a large number of ring-shaped electrodes 94 are formed in the acceleration cavity 99. In the traveling direction of the charged particle G, the length of the i-th ring-shaped electrode 94-i is defined as ki, and the distance to the next (i+1)-th ring-shaped electrode 94-(i+1) is defined as ji. A contact hole is formed in the upper substrate 92 of the ring-shaped electrode 94 (94-i: i = 1, 2, ...), a contact electrode 95 (95-i: i = 1, 2, ...) is formed in the contact hole, and an upper electrode 96 (96-i: i = 1, 2, ...) connected to the contact electrode 95 is formed, and the upper electrode 96 is electrically connected to a conductor electrode 94U formed on the lower surface of the upper substrate 92. In addition, contact holes are formed in lower substrate 93 of annular electrodes 94 (94-i: i = 1, 2, ...), contact electrodes 97 (97-i: i = 1, 2, ...) are formed in the contact holes, and lower electrodes 98 (96-i: i = 1, 2, ...) are formed to connect to contact electrodes 97, and lower electrodes 98 are electrically connected to conductor electrode 94B formed on the upper surface of lower substrate 93.

[0061] In this way, voltages can be applied to each annular electrode 94 (94-i) formed on the inner surface of the main substrate 91 of the cavity 99 from the outer electrodes 96 (96-i) and 98 (98-i) formed on the upper and lower substrates, but only one of them is sufficient. Therefore, only one of them is sufficient, but if they are applied simultaneously, the inside of the annular electrode 94 (94-i) effectively and immediately becomes the same potential. If a voltage of the opposite potential to that of the ion G is applied to each annular electrode 94 (94-i), the ion will accelerate and move forward due to the potential Vi of each annular electrode 94 (94-i). For example, if the mass of the ion is m and the speed at which it increases at each annular electrode 94 (94-i) is Δui, then the ion will accelerate by 1 / 2m(Δui) 2 =zeV holds. Therefore, by arranging many of them, the ions can move at very high speeds. For example, m=10 -25If we set the ion velocity to 10,000 ions per electrode, the velocity will be 56,000 km / sec. In other words, if we set ki=10 μm and ji=5 μm, we can create an acceleration cavity with a length of 15 cm. In this way, ultra-high-speed ions can be achieved in a very short distance. However, since the ions are also attracted to the annular electrodes and diverge, they must also be focused. To focus the ions, electrodes that apply a voltage with the same potential as the ions are placed, or a quadrupole magnetic field is applied. By combining these, ions with the desired velocity can be obtained. In addition, in the acceleration chamber shown in FIG. 3, one or more openings 100 are opened in the upper substrate 92 and / or the lower substrate 93, and the cavity 99 can be evacuated through the openings 100, or an inert gas or the like can be introduced to clean or purge the inside.

[0062] The acceleration cavity can also be fabricated by arranging a plurality of substrate sidewall electrodes having a central hole. FIG. 10 is a diagram showing an acceleration cavity in which a plurality of substrate sidewall electrodes having a central hole are arranged. FIG. 10(a) is a cross-sectional view perpendicular to the substrate surface, FIG. 10(b) is a plan view parallel to the substrate surface, and FIG. 10(c) is a cross-sectional view at A1-A2, as viewed from the left and right directions of FIG. 10(a) and FIG. 10(b). As shown in FIG. 10, a through-chamber 104 is formed in the main substrate 101, penetrating from its upper surface to its lower surface, and an upper substrate 102 is attached to its upper portion, and a lower substrate 103 is attached to its lower portion, and the lateral side of the through-chamber 104 becomes the side of the main substrate 101. Charged particles G (indicated by dashed arrows) such as ions generated in the plasma generation chamber or ionization chamber 104-1, which is a through-chamber, enter the acceleration cavity 104-2, which is a through-chamber, through a central hole 105-0 provided in the center of the substrate sidewall 101-0. A plurality of substrate side walls 101-1 (101-1,...,4,...) each having a central hole 105 (105-1,...,4,...) are arranged in the acceleration cavity 104-2. Conductive film electrodes 106 (106-1,...,4,...) are formed around the substrate side walls 101 (101-1,...,4,...). These conductive film electrodes 106 (106-1,...,4,...) are also laminated on the inner surface of the central hole 105 (105-1,...,4,...) of each substrate side wall 101 (101-1,...,4,...). The conductive film electrodes 106 (106-1,...,4,...) are connected to conductive film wirings 107 (107-1,...,4,...) formed on the underside of the upper substrate 102 and / or connected to conductive film wirings 108 (108-1,...,4,...) formed on the upper surface of the lower substrate 103. The conductive film wirings 107 (107-1,...,4,...) are connected to outer electrodes / wirings 110 (110-1,...,4,...) formed on the upper substrate 102 through contact holes and contact wirings 109 formed in the upper substrate 102. In addition, this conductive film wiring 108 (108-1,...,4,...) is connected to outer electrodes / wiring 112 (112-1,...,4,...) formed under the lower substrate 103 through contact holes and contact wiring 111 formed in the lower substrate 103.

[0063] A voltage can be applied to the substrate sidewall electrode / wiring 106 from the outer electrode / wiring 112. Normally, this voltage is the opposite voltage to the charge of the charged particle, so that the charged particle G entering the acceleration cavity is attracted and accelerated by the first substrate sidewall electrode wiring 106-1, passes through the substrate sidewall central hole 105-1, is attracted and accelerated by the next substrate sidewall electrode wiring 106-2, passes through the substrate sidewall central hole 106-1, and is accelerated by repeating this process, is attracted and accelerated by the last substrate sidewall electrode wiring 106-n, passes through the substrate sidewall central hole 106-n, and is emitted into the adjacent chamber 104-3, which is a through chamber (assuming that there are n substrate sidewall electrode wirings, etc.). The adjacent chamber 104-3 is, for example, the cavity chamber 14 or the deflection electromagnet chamber 15 in FIG. 1. Between the acceleration cavity 104-2 and the adjacent chamber 104-3, there is a substrate sidewall 101-5 having a central hole 105-5, and the charged particles enter the adjacent chamber 104-3 through this central hole 105-5. The substrate sidewall electrode having this central hole has a narrow area through which the charged particles G pass, so the charged particles G pass near the center without spreading out much. However, some of the charged particles are still attracted to the electrode side, so it is desirable to apply a voltage of the same potential (positive or negative) as the charged particles in some places to converge the charged particles. Here, the charged particles are decelerated a little because they are at the same potential as the charged particles, but are accelerated again by the next acceleration electrode. While repeating this convergence / divergence, acceleration / deceleration, a large number of substrate sidewall electrodes having central holes are arranged to accelerate the particles as a whole. Since the present invention uses an LSI process, a very small central hole and a substrate sidewall with a short distance that could not be realized in the past can be used, so a large number of substrate sidewall electrodes can be arranged even over a short distance, and the particles can be accelerated to a high speed over a short distance. Furthermore, since only a small voltage is required, a large power supply is not necessary. It is also possible to apply a large voltage by using a large power supply, and in that case, a large acceleration can be obtained.

[0064] Also, a voltage can be applied gradually to each substrate sidewall electrode in the traveling direction of the charged particle G, and large acceleration can be obtained in a short time and over a short distance. Alternatively, if a high frequency voltage is applied to each substrate sidewall electrode and each is synchronized, it is possible to obtain a large overall acceleration while repeating convergence and divergence, acceleration and deceleration. In the acceleration cavity 104-2, an opening 113 can be provided in the upper or lower substrate to perform evacuation, cleaning, or purging. Also, an opening 113 can be provided between each substrate sidewall to perform evacuation, etc.

[0065] The substrate sidewalls 105-0 and 105-5 between the adjacent chambers may not be arranged if they are not necessary. For example, there are cases where there is no problem if the charged particles G from the adjacent chamber 104-1 collide with the front side surface of the first substrate sidewall electrode 106-1, where the pressure in the adjacent chamber 104-1 is the same, and where the charged particles G are sufficiently accelerated and converged to pass through the central hole 105-1 of the first substrate sidewall electrode 106-1. Also, the size of the central hole 105-0 of the substrate sidewall 101-0 can be made smaller than the size of the central hole 105-1 of the first substrate sidewall electrode 106-1 to make it easier for the charged particles G to be attracted to the first substrate sidewall electrode 106-1. It is preferable that the sizes of the central holes 105 (105-1, ...) of the substrate sidewall electrodes 106 (106-1, ...) are the same size because this makes the acceleration uniform. It is desirable to make the size of central hole 105-5 in substrate sidewall 101-5, which serves as a partition between adjacent chamber 104-3, larger than the size of central hole 105 (105-4 in the figure) in the last substrate sidewall electrode 106 (101-4 in the figure) so that charged particles do not collide with substrate sidewall 101-5.

[0066] FIG. 4 shows an example of a charged particle accelerating tube using a high-frequency waveguide, which is a type of disk-loaded traveling wave accelerating tube. FIG. 4(a) is a schematic cross-sectional view perpendicular to the substrate surface, parallel to the traveling direction of the charged particle beam G, FIG. 4(b) is a schematic cross-sectional view parallel to the substrate surface, and FIG. 4(c) is a schematic cross-sectional view perpendicular to the substrate surface, viewed from the left and right directions of FIG. 4(a) and FIG. 4(b), showing a cross-sectional view of the central hole. The charged particle accelerating tube 200 shown in FIG. 4 is composed of a through-hole cavity 204 formed in a main substrate 201 and serving as a passage for the charged particles, and an upper substrate 202 and a lower substrate 203 attached to the upper and lower surfaces of the main substrate 201, which make the through-hole cavity 204 an airtight space. The charged particle acceleration tube 200 is partitioned in the direction of travel G of the charged particle (the longitudinal direction of the through-hole cavity) by substrate partition walls 201S-A and 201S-B having a hole (central hole) at the center, and a plurality of spaces are formed between the partition walls 201S-A and 201S-B, each of which is further partitioned by substrate partition walls 201S-i (i=1, 2, 3, . . . ) having a hole (central hole) at the center. On both sides of these spaces, an inlet 208 for high frequency waves such as microwaves is opened in the upper substrate 202 (lower There are a space (sometimes referred to as a high frequency introduction chamber) 204C-A (which may be open in the substrate 203) and a space (sometimes referred to as a high frequency output chamber) 204C-B (which may be open in the lower substrate 203) with an output port 209 for high frequency such as microwaves open in the upper substrate 202, and there are a plurality of spaces (sometimes referred to as acceleration cavities) 204C-i (i=1, 2, 3, . . .) for accelerating charged particles between them. In addition, in these spaces, vacuum exhaust ports 210 are appropriately opened in the upper substrate 202 or the lower substrate 203, and these vacuum exhaust ports 210 are connected to a vacuum pump 213 to make the space through which the charged particles pass into a state close to a vacuum. In FIG. 4, the vacuum exhaust port 213 is open in the high frequency introduction chamber or the high frequency output chamber, but it is not limited thereto and may be provided in other spaces or cavities.

[0067] When a semiconductor substrate such as a silicon substrate is used as the main substrate used in the present invention, the main substrate has high electrical resistance, so that a conductive film 206 is formed in a large number of through-hole cavities 204 in the charged particle acceleration tube 200. That is, in the cavity 204 formed in the main substrate 201, conductive films 206S1 and 206S2 are formed on the cavity side surface of the main substrate 201, a conductive film 206U is formed on the lower surface of the upper substrate 202, and a conductive film 206B is formed on the upper surface of the lower substrate 203. Since FIG. 4(c) is a cross-sectional view of the central hole 205, the conductive films 206S1, S2, U, and B are not visible, but are drawn as if they are seen through. The central hole 205 is disposed at the center of the substrate sidewall 201S-i (i=1, 2, . . .), and the conductive film 206 is also formed in a ring shape on the inner surface of the central hole 205. Although the cross section of central hole 205 is shown as rectangular, central hole 205 is formed by etching (wet or dry) while main substrate 201 is divided, so it can be formed into various shapes such as a trapezoid with two top and bottom joined together, an ellipse, or a circle.

[0068] Since a high-frequency current flows through the inner wall of the accelerating cavity 204C-i (i=1, 2, 3, . . .), it is better for the conductive film 206 to have good conductivity, for example, copper, gold, silver, aluminum, tungsten, cobalt, etc. are better. If there is a possibility that the temperature will rise, a metal film with a high melting point is better. Since the charged particle accelerating tube of the present invention can be made small, it is also possible to use the entire device by cooling it to a low temperature using a superconductor film. Examples of superconductor films include niobium (Nb), niobium-titanium (Nb-Ti), niobium-tin (Nb-Sb), magnesium diboride, and oxide high-temperature superconductors (yttrium-based, bismuth-based, etc.). These can be formed as sputtered films or coating films. If the thickness of main substrate 201 is h2, the width (planar width) is a2, and the thickness of conductive film 206 is t2, then the depth d5 ​​of through-hole cavity 204 is h2-2t2, and the width b2 of through-hole cavity 204 is a2-2t1. When an insulating film (e.g., silicon oxide film) or an adhesion improving film (e.g., Ti or TiN film) is formed between main substrate 201 and conductive film 206, and when an insulating film (protective film) is formed on conductive film 206, the thicknesses of these films must also be taken into consideration.

[0069] Charged particles G are emitted from a charge generating device or the like, pass through the inside of the cavity 204-1, and enter the charged particle acceleration tube 200 through the central hole 205 of the substrate partition 201S-A, which is the entrance of the charged particle acceleration tube 200. After entering the high frequency introduction space 204C-A, the charged particles G enter the acceleration space 204-1 through the central hole 205 of the substrate partition (side wall) 201S-1, and then enter the acceleration space 204C-i (i = 1, 2, 3, ...) through the central holes 205 of the substrate partitions 201S-i (i = 1, 2, 3, ...), and finally enter the high frequency extraction space 204C-B, and then exit through the central hole 205 of the substrate partition 201S-B, which is the exit of the charged particle acceleration tube 200, to the cavity 204-2 outside the charged particle acceleration tube 200. The radio frequency 211 enters the radio frequency introduction space 204C-A from the radio frequency introduction port 208, passes through the central hole 205 of each substrate partition, forms a radio frequency electric field that accelerates the charged particles in each acceleration space 204C-i (i=1, 2, 3, . . .), exits into the radio frequency output space 204C-B, and exits as radio frequency 212 from the radio frequency output port 209. Therefore, the charged particles are accelerated in succession by the acceleration electric field generated in each acceleration space 204C-i (i=1, 2, 3, . . .), and exits the charged particle acceleration tube 200 through the central hole 205 of the substrate partition 201S-B.

[0070] The accelerating tube 200 may also be provided with a focusing electromagnet 207 for focusing the divergence of the accelerated charged particles. The focusing electromagnet 207 is installed in a portion of the cavity 204 after the charged particles G have exited the central hole 205 of the substrate partition wall 201S-B. For example, as shown in FIG. 4, quadrupole electromagnets 207 (207-1, 2, 3, 4) are arranged around the cavity 204. FIG. 4(d) is a diagram showing a cross-sectional structure perpendicular to the longitudinal direction of the cavity 204 in the portion where the quadrupole electromagnets are arranged. Coils 207-2 and 207-4 are formed on both lateral sides of the cavity 204, sandwiching the substrate side walls 201S-S1 and 201S-S2 therebetween. The closer the coil 207 is to the center of the cavity 204, the stronger the magnetic flux density (or magnetic field) becomes, making it easier to control the charged particles (charged particles G pass through the center of the cavity 204), so it is better for the substrate side walls 201S-S1 and 201S-S2 to be thin. Since an LSI process can be used, it is also possible to form very thin substrate side walls, for example, 10 μm to 1000 μm.

[0071] The upper substrate 202 is present above the cavity 204, and the coil 207-1 is disposed above the upper substrate 202, embedded inside the upper substrate 202, or above or inside the upper substrate 202. The closer the coil 207 is to the center of the cavity 204, the stronger the magnetic flux density (or magnetic field) becomes, and the easier it is to control the charged particles. Therefore, when the coil 207 is disposed above the upper substrate 202, the coil 207-1 is brought as close as possible to the upper surface of the upper substrate 202. Optimally, the coil 207-1 should be in contact with the upper surface of the upper substrate 202. When the coil 207-1 is embedded inside the upper substrate 202 or formed inside the upper substrate 202, the upper substrate 202 present between the cavity 204, the bottom surface of the coil 207-1, and the cavity is the upper substrate 202-U, but the thickness of this portion is thinner than the thickness of the upper substrate 202. The thinner the thickness of this upper substrate 202-U, the better, but it can also be made very thin, for example, from 10 μm to 1000 μm.

[0072] The lower substrate 203 is present below the cavity 204, and the coil 207-3 is disposed below the lower substrate 203, embedded in the lower substrate 203, or inside the lower substrate 203. The closer the coil 207 is to the center of the cavity 204, the stronger the magnetic flux density (or magnetic field) becomes, and the easier it is to control the charged particles. Therefore, when the coil 207-3 is disposed below the lower substrate 203, the coil 207-3 is brought as close as possible to the lower surface of the lower substrate 203. Optimally, the coil 207-3 should be in contact with the lower surface of the lower substrate 203. When the coil 207-3 is embedded in the lower substrate 203 or formed inside the lower substrate 203, the lower substrate 203 present between the cavity 204, the upper surface of the coil 207-3, and the cavity is the lower substrate 203-B, but the thickness of this portion is thinner than the thickness of the lower substrate 203. The thinner the thickness of this lower substrate 203-B, the better, but it can also be made very thin, for example, from 10 μm to 1000 μm.

[0073] 4(d), when the horizontal center line of the main substrate 201 is C1, the center O1 of the cavity 204 is on the horizontal center line C1, and the coils 207-2 and 207-4 are arranged in the main substrate 201 so that their axes are aligned with the horizontal center line C1. The coils 207-1 and 207-3 are arranged so that their axes are aligned with the vertical center line C2 that passes through the center O1 of the cavity 204 and is perpendicular to the horizontal center line C1. By arranging the quadrupole electromagnets (coils) in this manner, the magnetic field distribution in the cavity 204 can be made nearly symmetrical, so that the charged particles can be focused near the center O1 of the cavity 204. In particular, by making the thicknesses of the substrate side walls 201S-S1 and 201S-S2 almost equal, making the characteristics of the coils 207-2 and 207-4 the same, and arranging them symmetrically with respect to the center O1 of the cavity 204, by making the thicknesses of the coils 202-U and 202-B almost equal, making the characteristics of the coils 207-1 and 207-3 the same, and arranging them symmetrically with respect to the center O1 of the cavity 204, and by making the characteristics of the coils 207-1, 207-2, 207-3, and 207-4 the same, the magnetic field distribution in the cavity 204 can be made nearly symmetrical. However, in the quadrupole electromagnet of the present invention, even if the characteristics and arrangement of the constituent coils and the thickness of the substrate side walls and substrate are somewhat different, the voltages applied to the individual coils can be freely set and the internal magnetic field of the cavity 204 can be freely changed, so that it is easy to converge the beam of charged particles near the center O1 of the cavity. The center O1 of the cavity 204 is in the traveling direction G of the charged particles, and therefore, it is desirable that the center of the central hole 205 coincides with the center O1 of the cavity 204.

[0074] If the width of the substrate side wall 201S-i, i.e., the length of the central hole 205 is m1, and the length of the acceleration cavity 204C-i (the size in the longitudinal direction of the charged particle accelerator 200) is p1, the distance between the high frequency introduction chamber 204C-A and the high frequency output chamber 204C-B is (n+1)×m1+n×p1. (When the charged particle accelerator 200 has n acceleration cavities) The length p1 of each acceleration cavity or the length m1 of the central hole 205 may be changed to change the acceleration electric field distribution. Also, the size (a2, h2) of the cavity 204 or the size of the central hole 205 (for example, the length or width when the central hole 205 is rectangular, or the diameter when the central hole 205 is circular) may be changed to change the acceleration electric field distribution. The charged particle accelerator of the present invention can be manufactured using an LSI process, so that these sizes can be easily and inexpensively changed. Also, the size and number of the quadrupole electromagnets can be freely changed according to the size of the cavity 204.

[0075] Next, a method for manufacturing an electromagnet (coil) will be described. FIG. 11 shows one embodiment of a method for manufacturing an electromagnet (coil). A coil manufacturing substrate 115-1 is attached to a support substrate 114-1. The support substrate 114-1 is later separated from the coil manufacturing substrate 115-1, so it is preferable to use a softening adhesive (softening temperature T1) for attachment. The support substrate 114-1 is an insulating substrate such as a glass substrate, a stone substrate, an alumina substrate, a plastic substrate, an epoxy substrate, or a polymer substrate, a semiconductor substrate such as Si, or a conductive substrate such as Cu or Al. The coil manufacturing substrate 115-1 is a non-magnetic substrate, and is an insulating substrate such as a glass substrate, a stone substrate, an alumina substrate, a ceramic substrate, a plastic substrate, an epoxy substrate, or a polymer substrate, or a semiconductor substrate such as Si. As shown in FIG. 11(a), a photosensitive film pattern for a coil conductor pattern is formed on the coil manufacturing substrate 115-1, and the coil manufacturing substrate 115-1 is etched. This etching is preferably vertical etching that is faithful to the photosensitive film pattern. Alternatively, a coil fabrication substrate 115-1 on which a coil conductor pattern punched out with a die is formed may be attached to the support substrate 114-1. Alternatively, a plastic or polymer resin film on which a coil conductor pattern is formed may be attached to the support substrate 114-1. When the coil fabrication substrate 115-1 is a semiconductor substrate such as Si, a conductive film is laminated on the side surface of the recess to prevent short circuits between the coil wiring.

[0076] Next, the coil conductor pattern in the recess is filled with a conductive film. The conductive film is, for example, Cu, Ni, Cr, Au, Al, W, Mo, Ti, Zr, various solders, their alloys or composite metals, or various silicide films or superconductors. This filling method includes a method of laminating by CVD or PVD and polishing (for example, CMP) to fill only the recess with the conductive film, a method of filling the recess with the conductive film by selective CVD, a method of filling the recess with the conductive film by plating, or a conductive paste coating method. These can also be polished to make it flat. By these methods, the first layer (116-1) of the coil wiring pattern with a width a and a depth c1 is completed. The planar pattern of the first layer is, for example, a wiring pattern with a length d (width a) and a distance b as shown in FIG. 11(g).

[0077] Next, the second layer pattern is produced in the same manner. For the second layer, a coil fabrication substrate 115-2 is attached to the support substrate 114-2, and a second layer coil wiring pattern 116-2 is formed using a photosensitive film or the like. The cross-sectional pattern of the second layer pattern is the same as that shown in FIG. 11(a), but the planar pattern is a rectangular pattern with a (horizontal) width a, a distance b, and a (vertical) width e, as shown in FIG. 11(h), so that it matches the pattern of the first layer when overlapped. The coil line width is (horizontal) width a × (vertical) width e, so e should be approximately equal to a. Next, as shown in FIG. 11(b), the second layer coil wiring pattern is attached to the first layer coil wiring pattern while matching the patterns. That is, the coil fabrication substrate 115-2, on which the second layer coil wiring pattern attached to the support substrate 114-2 is formed, is attached to the coil fabrication substrate 115-1, on which the first layer coil conductor pattern attached to the support substrate 114-1 is formed. The bonding method may be a room temperature bonding method, a diffusion bonding method, a high temperature bonding method, or, when the coil fabrication substrate 115-1 or 2 is an insulating substrate such as a glass substrate or a quartz substrate, and the coil fabrication substrate 115-2 or 1 is a semiconductor substrate such as Si, an electrostatic anodic bonding method may also be used. In addition, the bonding may be performed using an adhesive, and a conductive adhesive is used for the bonding portion between the conductive films, and an insulating adhesive is used for the other portions. In other bonding methods, a conductive adhesive may also be used for the bonding portion between the conductive films. If the distance b between the wirings is 10 μm or more (even at present), a metal mask may be used to apply a conductive adhesive to the bonding portion pattern, and if a photosensitive film conductive adhesive or a photosensitive film pattern + etching method is used, a conductive adhesive may be applied to the bonding portion pattern even if the distance b between the wirings is 1 μm. Furthermore, solder may be applied or plated to the bonding portion to attach it. If the recess of the second layer is also set to a depth of c1, C2 becomes 2c1. The adhesive used to bond the coil fabrication substrates 115 is preferably a thermosetting adhesive so that it does not separate during the subsequent heat treatment. When using a solder metal or a thermoplastic adhesive, care must be taken to prevent the coil fabrication substrates 115 from moving relative to each other during the subsequent heat treatment, causing pattern misalignment or separation.

[0078] Next, the support substrate 114-2 is removed. The adhesive used to attach the support substrate 114-2 and the coil fabrication substrate 115-2 is a thermoplastic adhesive, and an adhesive with a softening temperature T2 is selected such that T1>T2. As a result, only the support substrate 114-2 can be separated at a temperature between T1 and T2. FIG. 11(c) is a diagram showing the state after the support substrate 114-2 has been separated. The patterns of the third and subsequent layers are the same as those of the second layer, and by attaching these one after another, the wiring in the height direction of the coil can be created. However, since it takes time to stack them one by one, as shown in FIG. 11(d), two sheets stacked on top of each other are stacked next to make four sheets (the state of FIG. 11(d)), and then four sheets stacked on top of each other are stacked to make eight sheets. If c1=0.1 mm, the thickness will be 0.8 mm after five attachments.

[0079] The final coil wiring pattern must be connected to a spiral as a coil, so it is the wiring pattern shown in FIG. 11(i). The first layer is the wiring pattern shown in FIG. 11(g), and the top layer is the wiring pattern shown in FIG. 11(i). (The reverse is also possible.) The wiring pattern between them is the pattern shown in FIG. 11(h). When a predetermined height c4 is reached, the support substrate on the top layer side is separated, and then a photosensitive film 117 is attached (applied) to form a photosensitive film pattern 117. This is used as a mask to etch and remove the coil fabrication substrate 115. Since the support substrate 114-1 is not yet separated, etching with a high selectivity between the coil fabrication substrate 115 and the support substrate 114-1 is desirable. If the materials of the support substrate 114-1 and the coil fabrication substrate 115 are different, the etching selectivity can be easily increased. For example, the support substrate 114-1 is Si or glass, and the coil fabrication substrate 115 is glass or Si. Alternatively, it is possible to separate the unnecessary parts by cutting using a dicing method. For example, when attaching the support substrate 114-1 and the coil fabrication substrate 115-1, an adhesive that can be separated by light irradiation is used in the portion to be separated as an unnecessary portion, and a normal thermoplastic adhesive is used in the other portion, and then, by dicing, only a portion (a little in the depth direction) of the coil fabrication substrate 115 and the support substrate 114-1 is cut, and then the unnecessary portion is separated by light irradiation. In order to attach the adhesive separately, for example, it is sufficient to apply it using a mask. As a result, the coil 118 of the shape shown in FIG. 11(f) attached to the support substrate 114-1 is produced.

[0080] Next, the electromagnets (coils) 118-1 and 118-2 formed on the support substrate 114-1 are inserted into the main substrate 201, which is attached to the lower substrate 203 and has the coil insertion cavity 120 (120-1, 2) and the cavity 204-2 (see FIG. 4) through which the charged particle beam G passes. The lower substrate 203 has the conductive electrode / wiring 119 for connecting the terminal of the coil 118, so the coil 118 is inserted to match the pattern. The size of the coil 118 is adjusted so that the central axis of the coil 118 is located at the center of the main substrate 201. It is desirable to attach a conductive adhesive or solder metal to the connection portion in advance. If these are softened and attached by applying heat, the height in the vertical direction can also be adjusted. If an insulating film is laminated or an insulating sheet is attached to the wiring pattern of the coil 118 and only the connection portion is opened, the conductive adhesive or the like can be widely applied, so that the connection is reliable and the height and horizontality adjustments are easy.

[0081] Also, if all the terminals on the coil side are provided on the opposite side (as in the coil 118-1 shown in Figs. 11(j) to (m)), there is no need to provide the conductive film electrode / wiring pattern 109 on the lower substrate 203, and an insulating adhesive can be applied to the lower substrate 203 and / or the lower side of the coil 118, so that the coil 18 can be attached reliably and the height and horizontality can be easily adjusted. For example, the horizontality and pressing force of the lift press of the support substrate 114 can be easily adjusted. Incidentally, the size of the coil insertion cavity 120 (120-1, 2) is not so restricted, so it can be opened considerably larger than the coil 118, so there is no particular problem with inserting the coil. Also, if the conductive film electrode / wiring is formed large, there is no particular problem with connecting it to the coil side. The distance between the end face of coil 118 (the right side for coil 118-1, and the left side for coil 118-1) and the center of cavity 204-2 affects the magnetic field exerted on the charged particles, but since the current insertion alignment error is between 1 μm and 10 μm, the effect is not significant.

[0082] Furthermore, since the distance between the two coils 118-1 and 118-2 does not shift at all, the combined magnetic field exerted on the center of the cavity 204-2 hardly changes. In order to make the magnetic field uniform throughout the cavity 204-2, it is desirable to make the size of the coil (at the end surface) larger than the size (in the depth direction) of the cavity 204-2, but this can be achieved by thinning the lower substrate 203 in the coil insertion cavity 120 (120-1, 2) in advance so that the depth of the coil insertion cavity 120 (120-1, 2) is deeper than the cavity 204-2. In that case, the size of the coil 118 is naturally made larger accordingly.

[0083] After the coil 118 is fixed to the lower substrate 203 in the coil insertion cavity 120 (120-1, 2), the support substrate 114-1 is separated. In this method, for example, the coil 118 is fixed to the lower substrate 203 using a thermosetting adhesive or the like whose hardening temperature T3 is lower than T1 for the adhesive or the like used for bonding the coil 118 and the lower substrate 203, and then the temperature is raised to T1 or higher to separate the support substrate 114-1 (FIG. 11(k)). Next, as shown in FIG. 11(l), the upper substrate 121 on which the conductive film electrode wiring 121 to be connected to the coil terminal is formed is attached to the main substrate 201 in alignment with the terminal of the coil 118. If a wiring pattern is formed on the upper part of the coil 118, it is sufficient to attach it after laminating an insulating film or attaching an insulating film to open the connection portion and applying or forming a conductive adhesive or solder metal.

[0084] Next, the contact hole conductive film wiring 122 connected to the conductive film electrode wiring 121 is formed on the upper substrate 202, and the outer electrode wiring 123 (123-1, 2, 3) connected thereto is formed. The contact hole conductive film wiring 124 connected to the conductive film electrode wiring 119 is also formed on the lower substrate 203, and the outer electrode wiring 125 connected thereto is formed. As a result, the coil 118 (118-1, 2) is arranged in the coil insertion cavity 120 (120-1, 2) sandwiched between the main substrate side walls 201S-S2 and 201S-S1 on both sides of the cavity 204-2. Moreover, since it is arranged very accurately (the current alignment error is 10 μm or less), the magnetic field in the cavity is also uniform. A current can be passed through the coil 118-1 from the outer electrodes 123-1 and 123-2, and a current can be passed through the coil 118-2 from the outer electrodes 123-3 and 125. (Fig. 11(m))

[0085] In the process of Figure 11, a method was adopted in which the first layer pattern is attached to the support substrate, but it is also possible to create the first layer coil pattern on the lower substrate and then attach the second layer to the support substrate. This method allows the initial process of the first layer to be omitted. Similarly, the final top layer pattern can be formed on the lower surface of the upper substrate. This further allows the process of the top layer to be omitted. Furthermore, in this case, since the coil wiring patterns from the second layer to the n-1th layer (with the nth layer being the top layer) are the same, they can be simply stacked up, or the stacked layers can be stacked to the desired size. Finally, these can be attached to the first layer pattern of the lower substrate, and the n-1th layer to the top layer pattern of the upper substrate.

[0086] In the process of Fig. 11(j), the substrate side wall 201S-S1 and the substrate side wall 201S-S2 exist as partitions between the cavity 204-2 through which the charged particle beam G passes and the coil insertion cavity 120 (120-1, 2), but these partitions, the substrate side wall 201S-S1 and the substrate side wall 201S-S2, act in the direction of weakening or disturbing the magnetic field, and can therefore be removed. However, since the charged particles pass through the cavity 204-2, the pressure must be set to the same level as that of the cavity 204-2. For this purpose, openings for evacuation can also be provided in the upper and lower substrates 202 and 203 of the coil insertion cavity 120 (120-1, 2). If substrate side wall 201S-S1 and substrate side wall 201S-S2 are not provided, cavity 204-2 and coil insertion cavity 120 (120-1, 2) become the same cavity, so that when coils 118-1 and 2 are inserted, there is no need to worry about coils 118-1 and 2 colliding with substrate side wall 201S-S1 and substrate side wall 201S-S2, making insertion easier.

[0087] Furthermore, there is no need to consider the margin (margin distance) during insertion for the distance between the substrate sidewalls 201S-S1 and 201S-S2 and the coils 118-1 and 118-2. Therefore, the distance between the coils 118-1 and 118-2 can be shortened, so that the current for creating the magnetic field in the cavity can be reduced. Alternatively, the magnetic field can be further strengthened. Alternatively, if a central hole is opened in the substrate sidewalls 201S-S1 and 201S-S2, the magnetic field in that portion will not be affected (by the material) of the substrate sidewalls 201S-S1 and 201S-S2, and the pressure in the cavity 204-2 will not be affected much by the coil insertion cavity 120 (120-1, 2).

[0088] Furthermore, although the support substrate 114-1 is used, if the upper substrate 202 or the lower substrate 203 is used instead, the support substrate can be used as it is in the process shown in FIG. 11(j) without removing it. Also, if the coil 118 is fabricated by providing a convex portion on the support substrate 114-1 as in FIG. 12(d), the support substrate 114-1 can be removed without contacting the main substrate 201 when inserting the coil (the process shown in FIG. 11(j)), so that damage to the main substrate 201 can be avoided. As shown in FIG. 11(m), the electrodes to be connected to the wiring ends of the coil can be freely formed on either the upper substrate 202 or the lower substrate 203. In FIG. 11(j), since the electrode wiring pattern is formed on the lower substrate 203, it was necessary to match the terminals of the coil 118 to the electrode wiring pattern, but it is possible to make it unnecessary to form the electrode wiring pattern on the lower substrate 203, and therefore it is not necessary to match them when inserting the coil, and the process can be performed quickly. Furthermore, it is not necessary to use a conductive adhesive, and one type of ordinary adhesive (for example, an insulating adhesive) can be used to attach it to the lower substrate 203. Also, if the upper substrate 202 or the lower substrate 203 is used in place of the support substrate 114-1, it is not necessary to bring the coil 118 into contact with the lower substrate 203, and the upper substrate 204 to which the coil 118 is attached can be simply attached to the main substrate 201, eliminating the need for precise alignment.

[0089] In the process of Figure 11, the coil size is a = e = 30 μm, b = 20 μm, d = 1 mm (= 5 × 10 3 μm), height = 1 mm, length = 5 mm, a coil with 100 turns can be made. If the coil conductor is made of Cu, 6 A / cm 2 If a current of I = 9A can be passed through the coil (this is possible due to electromigration resistance), then a current of I = 9A can be passed through the coil. Therefore, the magnetic field generated at the center of the end face of the coil is Hc = 8 × 10 5 A / m.

[0090] Furthermore, the magnetic field generated can be increased by inserting a core with a high relative permeability μ into this coil. Here, a method of inserting a core with a high relative permeability μ into the coil used in the accelerator of the present invention will be described. A similar method to this method has already been described in JP 2012-134329 A, and it is also applicable to the present invention. FIG. 12 is a diagram showing a method of manufacturing a high-performance coil in which a core with a high relative permeability μ is inserted. In the embodiment shown in FIG. 12, four types of coil manufacturing patterns are used. FIGS. 12(g) to (j) are plan views illustrating the patterns. FIG. 12(g) is the same as FIG. 11(g), but the area corresponding to the core insertion hole is indicated by a dashed line A. Also, the part corresponding to the outer shape of the coil is indicated by a dotted line B. 11 and 12, the same substrate (layer) exists in each layer outside the coil, and in the process of Fig. 11(e), the outer substrate layer 115 is etched away all at once using the photosensitive film pattern 117 as a mask, but after attachment to the support substrate 114, a photosensitive film pattern or the like can be formed in the portion shown by dotted line B, and using this as a mask, the substrate 115 outside the region shown by dotted line B can be etched away, and only the coil formation region can be attached and stacked. Alternatively, it is also possible to not attach to the support substrate, but to attach and stack only the coil portion, and finally to attach the coil to a specified portion of the support substrate 114, to create the state shown in Fig. 11(f).

[0091] FIG. 12(a) is the same as FIG. 11(c). That is, the coil fabrication board 130-1 is the coil fabrication board 115 having the coil wiring pattern 116 shown in FIG. 12(g). The coil insertion area is a rectangle (rectangle) shown by the dashed line A, and the vertical side (width side of the coil) is inside the coil wiring pattern 116 shown in FIG. 12(g), and the horizontal side (axial direction of the coil) protrudes from the coil wiring on both sides. The dotted line B is the part that becomes the outer shape of the coil. The coil fabrication board 130-2 is the coil fabrication board 115 having the coil wiring pattern 116 shown in FIG. 12(h). The coil wiring patterns 116 are stacked in the height direction of the coil to form the coil wiring pattern. In the patterns of FIG. 12(g) and (h), the coil insertion area A is the same as the coil fabrication board 115, and is flat in plan view. The pattern attached thereon is the coil fabrication board 115 having the pattern shown in FIG. 12(i). That is, the coil fabrication substrate 130-3 is a coil fabrication substrate 115 having a pattern shown in FIG. 12(i). In FIG. 12(i), the coil insertion region A is hollowed out to form a cavity. This cavity can be made by attaching the coil fabrication substrate 115 shown in FIG. 12(h) to a support substrate, opening a window, and etching or punching the coil fabrication substrate 115 with a die. Furthermore, it can also be made by etching or punching the coil fabrication substrate 115 shown in FIG. 12(h) that has already been cut to the size of the coil region B. On top of this coil fabrication substrate 130-3, a coil fabrication substrate 115 having a hollowed out coil insertion region A shown in FIG. 12(i) is attached, and a predetermined number of these are attached. (FIG. 12(b)) Here, the coil fabrication substrates 130-4, 5, and 6 are coil fabrication substrates 115 having a pattern shown in FIG. 12(i). It is also possible to attach a number of coil fabrication substrates 115 having the pattern shown in Fig. 12(i) (all of which have the coil insertion area A hollowed out) together onto the coil fabrication substrate 130-2 shown in Fig. 12(a) which is the coil fabrication substrate 115 having no coil insertion area A hollowed out as shown in Fig. 12(h). In this case, the part shown by the dashed line A in Fig. 12(b) is hollow on the inside.If this cavity has a side perpendicular to the substrate surface, it will also have a vertical shape when superimposed; however, since this region A is larger in the axial direction than the coil region B, it is a portion that disappears, and so the shape does not necessarily have to be vertical.

[0092] Alternatively, the coil fabrication substrate 115 shown in FIG. 12(h) in which the coil insertion region A is not hollowed out may be attached to the one shown in FIG. 12(a). That is, the coil fabrication substrates 130-2 to 130-6 are all flat in which the coil insertion region A is not hollowed out. In this case, as shown in FIG. 12(c), the photosensitive film 131 is patterned to open a window in the coil insertion region A, and the coil fabrication substrate 115 in that portion is etched to form a recess (opening) 134 which is the coil insertion region A. In FIG. 12(c), the etched recess (opening) 134 which is the coil insertion region A reaches the portion of the coil fabrication substrate 130-3, but the portion of the coil fabrication substrate 130-2 may also be etched. If the etching reaches the region of the coil fabrication substrate 130-1, the coil wiring 116 will be exposed, which is undesirable (to avoid etching or damaging the coil wiring 116), so the etching is stopped just before the coil wiring 116 is exposed. After this, the photosensitive film pattern 131 is removed.

[0093] Next, an adhesive (coating liquid) is put into the recess 134, or the adhesive is attached to the core member 133 shown in Fig. 12(d), and then the core member 133 is inserted into the recess 134. The core member 133 is preliminarily attached to the support substrate 132 with an adhesive or the like. For example, after attaching a core member sheet, film, or thin plate serving as the core member to the support member 133, a predetermined pattern may be formed by photolithography + etching, or it may be produced by punching with a mold. Alternatively, the core member sheet or the like may be diced to pick up and remove unnecessary portions. In that case, if the adhesive is separated between the portion to be removed and the portion to be left attached as it is, the unnecessary portion can be easily removed using different peeling methods. (For example, adhesives with different softening temperatures are used.) As the adhesive, a non-magnetic insulating adhesive can be used, but a paste-like or liquid adhesive containing ferromagnetic particles such as ferrite particles may also be used. Since these ferromagnetic particles also serve as a kind of core, the effect of the core can be enhanced.

[0094] The core member 133 attached to the support substrate 132 is inserted into the recess (opening) 134 which is the coil insertion region A. At this time, if a convex portion 135 is provided on the support substrate 132, the upper part of the core member 133 can be prevented from protruding outside the upper surface of the uppermost coil manufacturing substrate 130-6, that is, the entire core member 133 can be placed inside the recess (opening) 134. (The sum of the height h1 of the core member 133 and the thickness h2 of the adhesive should be smaller than the depth h3 of the recess 134 (that is, h1 + h2 < h3. When the height of the convex portion 135 is h4, if it is designed such that h1 + h2 + h4 > h3, the support substrate 132 will not touch the upper surface of the coil manufacturing substrate 130-6, and the core member 133 can be smoothly inserted into the recess (opening) 134.) If the adhesive put into the recess is, for example, a thermosetting adhesive (curing temperature T1), and the adhesive between the core member 133 and the support member 132 is a thermoplastic adhesive (softening temperature T2), by using an adhesive such that T1 < T2, first, the core member 133 is fixed inside the recess 134 between T1 and T2, and then the core member 133 can be separated from the support member 132 by setting the temperature to T2 or higher.

[0095] If the adhesive or other foreign matter is prevented from adhering to the surface of the uppermost coil fabrication substrate 130-6 after the core member 133 is inserted into the recess 134, the process shown in FIG. 12(f) can be performed, that is, the next coil fabrication substrate 130-7 can be attached to the coil fabrication substrate 130-6. If the adhesive or other foreign matter is adhering to the surface of the uppermost coil fabrication substrate 130-6 or if the core member 133 is to be completely embedded in the recess, the same adhesive is inserted into the recess 134 from above the core member 133 after the core member 133 is inserted and fixed in the recess 134, and the gap space of the recess 134 is filled with the adhesive. Alternatively, an insulating film may be laminated or applied. At this time, the adhesive or insulating film is also adhered or laminated on the surface of the uppermost coil fabrication substrate 130-6, so that the adhesive or insulating film that is adhered or laminated is removed and flattened by CMP, BG (grinder) or etch-back to expose the coil wiring pattern 116. This planarization is carried out, for example, by applying an organic film such as a resist liquid and then polishing it with a CMP or BG (grinder) or etching it by an etch-back method to expose the surface of the coil fabrication substrate 130-6 while planarizing it (FIG. 12(e)).

[0096] After this, the coil fabrication substrate 130-7, which is the coil fabrication substrate 115 in which the coil insertion region A shown in FIG. 12(h) is not hollowed out, is attached to the coil fabrication substrate 130-6 (slightly etched or polished). After that, the coil fabrication substrate 130-8, which is the coil fabrication substrate 130-5 having the coil wiring pattern shown in FIG. 12(j), which is the top coil fabrication substrate, is attached to the coil fabrication substrate 130-7. In this manner, a coil incorporating a core member 133 can be fabricated. A required number of coils incorporating core members 133 are fabricated in required locations on the support substrate 114-1. After this, the coil incorporating the core member 133 is inserted into the coil insertion cavity 120 in the process shown in FIG. 11(j) and subsequent steps. Coils incorporating core members 133 can be arranged simultaneously in a batch in a number of accelerating devices or parts requiring electromagnets. Incidentally, if an insulating film is interposed by coating or laminating an insulating film on the coil fabrication substrate 130-1 which is the coil fabrication substrate 115 having the coil wiring pattern shown in Fig. 12(g), it is also possible to attach the coil fabrication substrate 130-3 which is the coil fabrication substrate 115 having the coil insertion region A shown in Fig. 12(i) without attaching the coil fabrication substrate 130-2 which is the coil fabrication substrate 115 having the coil insertion region A not hollowed out shown in Fig. 12(h) (because the coil wiring pattern and the core member 133 are not electrically connected), similarly, if an insulating film is interposed on the upper surface of the core member 133, it is also possible to attach the coil fabrication substrate 130-8 which is the coil fabrication substrate 115 having the coil wiring pattern shown in Fig. 12(j) without attaching the coil fabrication substrate 130-7 which is the coil fabrication substrate 115 having the coil insertion region A not hollowed out shown in Fig. 12(h) to the coil fabrication substrate 130-6. This intervening insulating film can be realized by laminating insulating adhesives, insulating sheets, and insulating films (CVD, PVD, coating methods, etc.). As a result, the layer shown in Figure 12(h) becomes unnecessary.In addition, examples of core materials include soft magnetic materials such as iron (μ = approx. 5000), pure iron (μ = approx. 10000), silicon iron (μ = approx. 7000), permalloy (μ = approx. 100000), supermalloy (μ = approx. 1000000), amorphous iron (μ = approx. 3000), ferrite (μ = approx. 2000), sendust (μ = approx. 30000), and vermendur (μ = approx. 5000).

[0097] Next, a method for manufacturing the coils to be disposed on the upper and lower substrates will be described. FIG. 13 is a diagram showing a method for manufacturing the coils to be disposed on the upper and lower substrates. A first-layer coil wiring substrate 142-1 is attached to a support substrate 141-1. This coil wiring substrate 142-1 is a substrate without coil wiring, for example, one without the conductive film wiring pattern 144 of FIG. 13(i). When this coil wiring substrate 142-1 is a semiconductor substrate such as Si or a conductive substrate, an insulating film is formed on the substrate surface to prevent connection between the wiring and the coil wiring substrate 142-1. When the coil wiring substrate 142-1 is an insulator such as glass, quartz, sapphire, alumina, plastic, or polymer resin, it is usually not necessary to form an insulating film, but an insulating film may be required to improve adhesion with the conductive film. The first-layer coil wiring substrate 142-1 is intended to protect the wiring pattern of the wiring substrate attached thereon, but since an insulating film can be formed on the underside of the coil wiring of the second layer for protection, this first-layer coil wiring substrate 142-1 may not be provided. However, in order to make the coil stronger, it is better to provide this first layer coil wiring board 142-1.

[0098] Next, the second-layer coil wiring board 142-2 is attached. Since there is no pattern for the first layer, pattern alignment is not necessary. The second-layer coil wiring board 142-2 is a wiring board having the wiring pattern shown in FIG. 13(i). This attachment method is performed by attaching the second-layer coil wiring board 142-2 to another support board 141-2 (not shown) as already described, and then attaching the coil wiring board 142-1 attached to the support board 141-1 and the coil wiring board 142-2 attached to the support board 141-2 so that they face each other, and then separating the support board 141-2 from the coil wiring board 142-2. Alternatively, if the coil wiring board 142 can be supported by itself, the coil wiring board 142-1 and the support board 141-2 can be attached directly while aligning them. Alternatively, the coil wiring board 143 without a wiring pattern is attached to the support board 141-2, the coil wiring board 143 without a wiring pattern is patterned, a photosensitive film pattern with the wiring pattern as an opening is formed by photolithography, and the coil wiring board 143 is etched to form a through groove pattern. This through groove pattern is preferably vertical. Alternatively, the coil wiring board 143 without a wiring pattern can be punched out with a metal mold or the like having a wiring pattern to form a through groove pattern. Alternatively, a photosensitive resin is applied to the support board 141, a through groove pattern is opened, and the through groove pattern is hardened except for the opening to form the through groove pattern. Alternatively, an insulating film paste is applied, a through groove pattern is opened with a metal mold or the like, and the paste is hardened to form the through groove pattern. Alternatively, a paste is applied by a screen printing method, a through groove pattern is opened, and then the paste is hardened to form the through groove pattern.

[0099] An insulating film is formed on the coil wiring board 143 thus formed with the through grooves if necessary, then a conductive film is formed, and the through groove pattern is filled with the conductive film. After forming a thick conductive film by a CVD method, a PVD method, or a plating method to fill the through grooves, the surface is etched (etch-back method) or polished (BG method or CMP method) to remove the conductive film on the surface and fill only the through grooves with the conductive film. Alternatively, a conductive film (seed layer) is thinly laminated on the inner walls of the through grooves and the surface of the coil wiring board 143 by a CVD method or a PVD method, and then a photosensitive film is applied or a photosensitive sheet is attached, and the parts other than the through groove pattern are covered with a photosensitive film by a photolithography method, and then the through groove pattern is filled with a plating film by a plating method, and then the conductive film laminated on the surface of the coil wiring board 143 is removed by an etch-back method or a polishing method to produce a coil wiring board 143 having a pattern (for example, as shown in FIG. 13(i) to (k)) in which only the through groove pattern is filled with the conductive film. Alternatively, a conductive paste is applied to fill the through groove pattern, the paste except for the through groove pattern is removed, and the conductive paste in the through groove is solidified by heat treatment or the like. Alternatively, molten metal is poured into the through groove pattern, cooled and solidified, and the through groove is filled with metal (conductive material). The coil wiring pattern 144-2 of the second layer coil wiring board 142-2 is the first sheet of a spiral pattern as shown in FIG. 13(i). It is formed in a rectangular pattern, but it may be a circular pattern or an elliptical pattern. Next, if the coil wiring board 142-2 is attached to the support board 141-2, the support board 141-2 is separated from the coil wiring board 142-2. (FIG. 13(a)) The wiring pattern 144 extending to the right side of FIG. 13(i) is a pattern for making a coil terminal at the top, but this is only described for ease of understanding on the drawing, and this pattern may extend wiring to the left side of the drawing.

[0100] Next, the third-layer coil wiring board 142-3 is attached on the second-layer coil wiring board 142-2. The wiring pattern of the third-layer coil wiring board 142-3 is a contact pattern (144-1) that contacts the upper and lower annular wiring patterns as shown in FIG. 13(j). The right-side wiring pattern 144-2 is a contact wiring for providing the terminal electrode of the coil at the upper part. The coil wiring board 142-3 is attached to the support board 141-3, and the third-layer coil wiring board 142-3 is further attached on the second-layer coil wiring board 142-2. (FIG. 13(b)) FIG. 13(c) shows the support board 141-3 separated. In such upper and lower contact wiring, current does not flow horizontally but flows vertically, so the thickness of the coil wiring board 143 may be thin. Therefore, an insulating film is formed directly on the second-layer coil wiring board 142-2 by CVD, PVD, or coating (SOG, paste) and, if necessary, subjected to appropriate heat treatment, etc., and then contact holes are opened using photolithography, a conductive film is laminated by CVD, PVD, plating, or coating (paste), the contact holes are filled with the conductive film (depending on the current flowing through the coil, it is not necessarily necessary to fill), and a conductive film pattern around the contact holes and a contact conductive film pattern with the upper layer wiring are formed using photolithography, etc. and etching, etc. According to this manufacturing method, the thickness between the coil wirings, i.e., the depth of the contact holes, can be made about 1 μm to 10 μm. (This figure is also Fig. 13(c).)

[0101] The contact hole size (in the case of a rectangular shape, the length is a μm and the width is b μm) is selected according to the current flowing through the coil. The current flowing through the coil (and of course the width d and thickness h of the upper and lower coil wiring) determines the magnetic field generated by the coil. For example, if the contact holes (144-1 and 144-2 in Fig. 13(j)) and the coil wiring 144 are formed by plating, a current density of about 106 A / cm2 can be passed, taking into account electromigration and stress migration, so a current of about 10 A can be passed with a=b=30 μm, or d=30 μm, h=30 μm. If the coil size is a rectangle with x=1 mm and y=1 mm and the coil is wound 100 times, the central magnetic field generated at the coil end surface is quite large at . If the contact depth is 2 μm, the pitch per turn is 32 μm, and the coil length is 3200 μm = 3.2 mm with 100 turns. If the contact depth is 20 μm, the pitch per turn is 50 μm, and 100 turns results in a coil length of 5000 μm = 5.0 mm. Note that a coil wiring board having a ring-wound coil wiring pattern can be manufactured by a lamination method instead of a deposition method. The method is the same as the method for forming the contact wiring pattern described above.

[0102] Next, a coil wiring board 142-4, which is a coil wiring board 143 having a ring-shaped coil wiring pattern 144 as shown in FIG. 13(k), is attached on the coil wiring board having a contact hole pattern or on the insulating layer 142-3 having a contact hole pattern. The coil wiring board 142-4 is also attached to a support board 141-4 (not shown) and then attached on the coil wiring board 142-3, and then the support board 141-4 is separated. When the coil wiring board 142-4 can be processed independently, the coil wiring board 142-4 can also be directly attached on the coil wiring board 142-3. Next, a coil wiring board 142-5, which is a coil wiring board 143 having a contact pattern as shown in FIG. 13(j), is attached to the support board 141-5 and then attached to the coil wiring board 142-4. As described above, the contact 144-5-1 can also be formed without using the coil wiring board 142-5. In addition, the contacts 144-3-2, 144-4-2, and 144-5-2 that connect the lower coil terminal to the upper electrode are stacked and connected in sequence (FIG. 13(d)).

[0103] By repeating these steps, a coil having a predetermined number of turns is formed by alternately attaching or stacking a ring-shaped coil wiring pattern as shown in FIG. 13(k) and a contact pattern as shown in FIG. 13(i). In FIG. 13(e), the coil wiring board having the ring-shaped coil wiring pattern has four layers 142-2, 4, 6, and 8, and the coil wiring board having the contact wiring pattern has four layers 142-3, 5, 7, and 9. For simplicity, the number of turns of the coil wiring is reduced, but it is possible to stack them one after another. Alternatively, several layers of the coil wiring may be stacked on top of each other. When a core is inserted into the coil, a photosensitive film pattern 145 is formed to punch out the part where the coil will be inserted later, that is, the inner part of the coil wiring 144 formed in a ring shape, the inner part of the part indicated by the dashed line 147 in FIG. 13(e) (the inside of the part indicated by the dashed line 147 in the coil wiring patterns in FIG. 13(i) to (k)). Since a considerable thickness is etched, a film or thin plate for an etching stopper may be interposed. Using this photosensitive film pattern 145 as a mask, etching is performed from the opening 146 to remove the coil wiring board inside the coil wiring. The inner coil wiring board of the coil wiring board 142-2 with the wiring pattern of the lowest layer is completely removed, and the coil wiring board 142-1 without the wiring pattern therebelow is etched away to a middle part (or may be entirely). As a result, the coil insertion hole 148 (whose side surface becomes 147) is formed. Since a considerable amount of the coil board is etched in this etching, it is necessary to set a fairly large etching selection ratio between the photosensitive film pattern 145 (and the etching stopper, if an etching stopper is interposed) and the coil board. Alternatively, the photosensitive film 145 needs to be made quite thick. Therefore, it is advisable to hollow out the portion 148 that will become the coil insertion hole in advance at the stage of producing each coil wiring board. For example, as shown in Figs. 13(i) to (k), the inner portion 148 of the area indicated by the dashed line 147 is also removed. This removal method can be performed at the same time as forming the wiring trench (through hole) when forming the wiring pattern 144, so there is no increase in the number of processes and no increase in costs.When forming the wiring pattern 144, the conductive film formed in the cut-out portion 148 can be removed at the same time, or masked so that no conductive film is formed. This also does not increase the number of processes. As a result, by stacking a predetermined number of coil wiring boards, the coil insertion holes 148 are formed at the same time, and processes such as attaching the photosensitive film pattern 145 and etching stoppers are not required.

[0104] Next, as shown in FIG. 13(f), the core 151 attached to the support substrate 149 is inserted into the coil insertion hole 148. In order to prevent the support substrate 149 from colliding with the uppermost coil wiring substrate 142-9, a protrusion 150 may be provided and the core 151 may be attached to the protrusion 150 and inserted into the coil insertion hole 148. This allows the core 151 to be completely inserted into the coil insertion hole 148. The core 151 may be inserted into the coil insertion hole 148 after an adhesive is poured into the coil insertion hole 148 using a dispenser or coating, or the core 151 may be inserted after the adhesive is applied to the lower surface or side surface of the core 151. If the adhesive is in a paste, liquid, or gel form, it also serves as a buffer, so that damage to the coil wiring substrate 142 can be reduced. Alternatively, an adhesive sheet may be attached to the core 151, and the adhesive sheet may also serve as a buffer by being given cushioning properties. As described above, the effect of the core can be further enhanced by using a paste containing a powdered soft magnetic material or a liquid or gel material as an adhesive. Even if the core 151 is not used, the magnetic flux density of the coil can be increased to some extent by filling the coil insertion hole with a paste containing a powdered soft magnetic material or a liquid or gel material. In addition, by injecting a paste containing a powdered soft magnetic material or a liquid or gel material to the extent that the coil insertion hole 148 is filled, or by injecting the above material to the extent that the coil insertion hole 148 is filled when the core 151 is inserted, the core 151 is covered with these materials, so there is no need to use a material such as an adhesive to fill the coil insertion hole 148 later. When the core 151 is inserted and the coil insertion hole 148 is covered with adhesive or the like, the wiring layer exposed on the upper surface of the uppermost coil wiring board 142-9 may also be covered with adhesive or the like, so the adhesive or the like adhering to the upper surface of the uppermost coil wiring board 142-9 is removed by a polishing method (BG method, CMP method, etc.) or an etching method. It is also preferable to flatten the upper surface of the uppermost coil wiring board 142-9.

[0105] Next, as shown in FIG. 13(g), a photosensitive film is patterned 152 to determine the outer shape of the coil. The photosensitive film pattern 152 is used as a mask to etch the coil wiring board 142, and unnecessary parts are removed up to the bottom coil wiring board 142-1. Since the coil wiring boards 142 are also thick, they can be stacked with the outer shape of the coil determined. The outer shape of each coil wiring board 142 (142-1, 2, ...) may be a board with a predetermined outer shape from the beginning (for example, a board 143 having only the outer shape shown in FIG. 13(i) to (k)) on which a through hole for wiring and a pattern of a conductor film filling in the through hole are formed. Alternatively, a large number (or even one board) of coil wiring boards 142 (142-1, 2, ...) having an outer shape, a through hole for wiring, and a pattern of a conductor film filling in the through hole can be formed and stacked. In this way, as shown in FIG. 13(h), the coil 140 attached to the support substrate 141-1 is formed.

[0106] Next, the fourth substrate 153 is attached to the upper surface of the coil 140 (coil wiring substrate 142-9 in FIG. 13(g)). (FIG. 13(l)) The fourth substrate 153 is an insulating substrate such as a glass substrate, a quartz substrate, a sapphire substrate, an alumina substrate, an AlN substrate, a ceramic substrate, various polymer substrates such as epoxy and polyimide, and a plastic substrate. In the case of a conductive substrate or a semiconductor substrate such as a Si substrate, it is necessary to cover the surface and the contact hole portion with an insulating film. After attaching the fourth substrate, contact holes and conductive film wirings 154 therein are formed in the fourth substrate 153 for the conductive film wiring patterns 144-9-1 and 144-9-2 of the uppermost coil wiring substrate 142-9, and further, at least electrode / wiring patterns 155-1 and 155-2 connected to the contacts 154 are fabricated. The conductive film wiring pattern 144-9-2 is a wiring that connects to the coil wiring terminal of the bottom coil wiring board 142-2, and the electrode / wiring pattern 155-2 is connected to it. The other coil wiring terminal is the coil wiring terminal 144-9-1 of the top coil wiring board 142-9, and the electrode / wiring pattern 155-1 is connected to it. Therefore, a current can be passed through the coil 140 between the conductive film wiring patterns 144-9-1 and 144-9-2 to generate a magnetic field. If the fourth board 153 is an insulating board (or a conductive film board or semiconductor board covered with an insulating film on its surface), the coil wiring board 142-9, which is only a contact wiring pattern, can be omitted, and the coil wiring board 142-8 having a ring-shaped coil wiring pattern can be directly attached. In that case, an insulating adhesive is used as the adhesive. The fourth substrate 153 on which the contacts 154 and the conductive film / wiring electrodes 155 are formed in advance can be attached to the coil 140, but a conductive adhesive is used to connect the conductive film / wiring patterns 144-9-1 and 144-9-2 to the contacts 154, and an insulating adhesive is used for other parts. Alternatively, the conductive film / wiring patterns 144-9-1 and 144-9-2 to the contacts 154 and other parts can be directly bonded (at room temperature, high temperature, fusion, etc.).

[0107] After this, the support substrate 141-1 is separated. As a result, the coil 140 attached to the fourth substrate 153 can be produced. The coil 140 has the core 151 inside the coil wiring. If the core is not used, there is no need to form the coil insertion hole 148, and the process is simplified. By using the fourth substrate for the support substrate 141-1, a similar coil 140 can be produced, and there are advantages such as not needing to separate the last support substrate 141-1 and not needing to use the first coil wiring substrate 142-1 without a wiring pattern. However, since this fourth substrate 153 will be used as a product, it is necessary to develop materials and processes taking into consideration reliability such as durability. In addition, at this time, contact holes and electrodes / wiring are formed on the side of the fourth substrate 153, which is also the support substrate.

[0108] The coil 140 attached to the fourth substrate 153 is attached to the second substrate (upper substrate) 202 and the third substrate (lower substrate) 203 attached above and below the cavity 204-2 through which the charged particles pass, as shown in Fig. 11. Fig. 14 shows this state. That is, Fig. 14 shows a quadrupole electromagnet made with the coil (electromagnet) of the present invention. Coils 118-1 and 118-2 are respectively arranged in the cavities (coil insertion cavities) 120-1 and 120-2 provided on the left and right (Y direction) of the charged particle passage cavity 204-2, and the second substrate (upper substrate) 202 is attached to the top thereof, and the third substrate (lower substrate) 203 is attached to the bottom thereof. The lower surface of the coil 140 (140-1) attached to the fourth substrate 153 (153-1) is attached to the second substrate (upper substrate) 202 located above the charged particle passage cavity 204-2 in such an accelerator. The coil 140 (140-1) is attached by applying adhesive or an adhesive sheet to the attachment surface of the second substrate (upper substrate) 202. Alternatively, the coil 140 (140-1) is attached by applying adhesive or an adhesive sheet to the lower surface of the coil 140 (140-1). A recess may be created in the portion of the second substrate (upper substrate) 202 where the coil 140 (140-1) is to be arranged, the second substrate (upper substrate) 202 in that portion may be thinned, and the coil 140 (140-1) may be inserted into the recess. Since the thickness of the second substrate (upper substrate) 202 on the charged particle passage cavity 204-2 is reduced, the end face of the coil 140 (140-1) approaches the charged particle passage cavity 204-2, and the strength of the magnetic field in the charged particle passage cavity 204-2 can be increased. Since the second substrate (upper substrate) 202 weakens or disturbs the magnetic field, a part (opening portion 159-1 shown by a dotted line) of the second substrate (upper substrate) on the charged particle passage cavity 204-2 may be removed. In that case, in order to prevent the pressure in the charged particle passage cavity 204-2 from increasing, the coil 140-1 is sealed with an adhesive or the like so that it completely blocks the opening portion 159-1. If a semiconductor substrate such as a conductive film (conductive thin plate) or a Si film (Si substrate) is bonded to the sealing portion of the lower end face of the coil 140-1, if the second substrate (upper substrate) is a glass substrate or the like, it can be firmly attached by anodic electrostatic bonding. Alternatively, if these films, layers or substrates are used for the coil wiring board 142-1, they can be firmly attached by anodic electrostatic bonding in the same manner.

[0109] Alternatively, as shown in Fig. 14, the support 156-1 is attached to the second substrate (upper substrate), the fourth substrate 153-1 is attached to the support 156-1, a cavity 157-1 is formed, the coil 140-1 is disposed therein, and an opening 158-1 is provided in the fourth substrate 153-1 so that a vacuum can be drawn, thereby preventing an increase in pressure in the charged particle passage cavity 204-2. In this case, if the distance between the second substrate (upper substrate) 202 and the end face of the coil 140-1 becomes almost zero when the fourth substrate 153-1 is attached to the support 156-1, the two substrates can be attached at the same time, and the distance between the charged particle passage cavity 204-2 and the end face of the coil 140-1 is fixed even if the end faces of the second substrate (upper substrate) 202 and the coil 140-1 are not attached. If the support 156-1 is formed using the coil wiring substrate 142, there is no increase in the process. Alternatively, the cavity 157-1 can be created in a substrate (which can be an insulating substrate, a conductive substrate, or a semiconductor substrate such as a Si substrate) having a thickness equal to or slightly longer than the length of the coil 140-1, and attached to the second substrate (upper substrate) 202 or the fourth substrate 153-1, and when the coil 140-1 is arranged, it can be attached to the second substrate (upper substrate) 202 or the fourth substrate 153-1. If the second substrate (upper substrate) 202 or the fourth substrate 153-1 is a glass substrate or the like, and the support 156-1 is a conductive substrate or a semiconductor substrate such as a Si substrate, they can be firmly attached by electrostatic anodic bonding. Although the direction perpendicular to the paper surface (the traveling direction of the charged particle) is not shown, the support 156-1 can surround the charged particle passage cavity 204-2 more widely, so that the upper part of the charged particle passage cavity 204-2 can be completely included in the cavity 157-1. Therefore, since the outside of the charged particle passage cavity 204-2 is also surrounded by the pressure-controlled cavity 157-1, the pressure in the charged particle passage cavity 204-2 can also be controlled to a lower pressure. Although the electrodes of the coil 118 (118-1, 2) are inside the cavity 157-1, they can be routed as wiring and therefore can be extended to the outside of the cavity.

[0110] The coil 140-2 can be arranged in the same manner under the charged particle passage cavity 204-2. The formation of the support 156-2, the opening 159-2 and the recessed area in the third substrate (lower substrate) 203 facing the coil end surface, the formation of the cavity 157-2, and the opening 158-2 for evacuation are also similar. In addition, multiple coils 118 (118-1, 2) and coils 140 (140-1, 2) can be arranged in the direction perpendicular to the paper, i.e., along the charged particle passage cavity 204-2, and multiple quadrupole magnet spaces can be created simultaneously and easily. The quadrupole electromagnets can control the convergence and divergence of the charged particles passing through the charged particle passage cavity 204-2.

[0111] In FIG. 4, a substrate coil is arranged, but a normal electromagnet may be arranged. For example, a quadrupole magnet can be arranged in the portion where various electromagnets are arranged to converge the charged particles (for example, in FIG. 1, portions 15, 17, 19, 21, 22, 23, 26, 28, 29, 31, 32, 35, 36, etc.). In the vertical direction, one magnetic pole of the electromagnet can be simply arranged, and the magnetic pole can be brought into contact with or close to the upper and lower substrates. The closer it is to the upper and lower substrates, the closer it is to the charged particle trajectory (near the center of the penetration chamber), so that the charged particles can be converged even with a smaller magnetic field. Since an electromagnet cannot be arranged on the side as it is, in the portion where the charged particles are converged, the outer region (both sides) of the portion where the charged particles are converged is cut approximately parallel to the charged particle trajectory to provide an opening region (both sides) in the substrate, and an electromagnet is arranged so that a magnetic field is applied to the opening region perpendicular to the charged particle trajectory. Since the space for the region is limited, it is desirable to have a small size that generates a strong magnetic field. If the superconducting magnet can obtain the desired magnetic field strength while taking into consideration the container space, it can also be placed therein. Since the accelerator of the present invention is small in size, the container size does not become too large even if the entire part in which the electromagnets are placed is placed in a container that is heated to a temperature that can maintain superconductivity. Laser dicing, high-pressure water dicing, etc. can be used to create an opening in the substrate. The desired part in the substrate can be opened accurately. The electromagnets placed on the sides are also brought into contact with or close to the substrate, and the closer they are to the substrate, the closer they are to the charged particle orbit (near the center of the penetration chamber), so that the charged particles can be converged even with a smaller magnetic field.

[0112] In the case of a synchrotron, charged particles can be generated at higher speeds by accelerating them in the cavities between the bending magnets 25, 30, 34, and 37. For example, the acceleration electrodes used in the mass spectrometer described later can be used. That is, a large number of acceleration electrodes (which can also be used for focusing and deceleration) are fabricated in parallel in the penetration chamber, each of which is made of a substrate side wall plate with a central hole and a laminate of conductive film electrodes. If gradually larger voltages are applied to the acceleration electrodes arranged in large numbers in the direction of the charged particle's travel, the charged particle passing through the central hole of the acceleration electrode will accelerate. For example, if 100 substrate side wall plates are arranged at a pitch of 1 mm, the length is 100 mm, but if the voltage is divided between them and 100 V is applied overall, then 1 / 2mv2=qV (m: charged particle mass, v: velocity, q: charge, V: applied voltage), so m=10 -25 kg, q=e, v=14km / sec. Accelerating at four points is 56km / sec. 1000 revolutions is 56000km / sec, which is 1 / 5 the speed of light. Alternatively, the charged particles can be accelerated by applying a radio frequency voltage to multiple accelerating electrodes, and the speed can be increased by increasing the frequency. Multiple circular synchrotron orbits can also be arranged (see Figure 16), so the speed of the charged particles can be increased reasonably by gradually increasing the frequency of the radio frequency voltage in each orbit. In the case of a linear accelerator, it is easy to arrange electromagnets from the sides (left and right) since it is only necessary to cut the substrate on the sides of the through chamber.

[0113] FIG. 5 is a diagram showing an accelerator in which a plurality of charged particle accelerators of the present invention are connected. A plurality of accelerators 200 shown in FIG. 4 are connected (200-1, 2, 3, ...), and a high frequency is input from a high frequency generator 225 through a high frequency introduction tube (waveguide) 223 that inputs a high frequency to each accelerator, an accelerating electric field is created in the accelerator 200, the velocity of the charged particle that is input from the charged particle generator 221 to the accelerator 200 (200-1) is accelerated, and the charged particle 227 is emitted at high speed from the final stage accelerator 200 (200-3). In addition, the high frequency that has passed through the accelerator 200 exits from a high frequency lead-out tube 224. The frequency, power, and timing (pulse, etc.) of each of the high frequency generators 200 and the charged particle generator 221 are controlled by a control device 226. The accelerator of the present invention can be manufactured with freely changed sizes, so that it can be selected according to the purpose. For example, if the cavity depth (h1, i.e., the thickness of the main substrate) is 1 mm, the width of the accelerator can be about 3 mm, so 100 accelerators with a length of 300 mm can be made with a 300 mm x 300 mm wafer (rectangular in this case). Therefore, an accelerator with a length of 30 m can be made with one wafer. With such a small accelerator, the entire accelerator can be covered with a vacuum (ultra-low pressure) box, so if the accelerator is also evacuated, an even more ultra-ultra-low pressure cavity can be realized. In addition, the entire accelerator can be immersed in liquid He or liquid nitrogen, so heat generation due to high frequency application can be suppressed, and a superconductor can be used for the focusing electromagnet, so the magnetic field of the electromagnet can be increased.

[0114] FIG. 6 is a diagram showing an example of a method for manufacturing a charged particle accelerator of the present invention. In the charged particle accelerator of the present invention, a through hole formed in a main substrate 201 is used as an acceleration cavity for charged particles. The main substrate 201 is attached to a lower substrate 203. The main substrate 201 can be made of various materials such as a conductive substrate, an insulator substrate, a semiconductor substrate, etc. As the conductive substrate, a metal substrate such as copper or aluminum, a semiconductor substrate doped with a high concentration of carriers (for example, a low resistance semiconductor substrate), a conductive plastic, a conductive ceramic, a conductive carbon substrate, etc. can be used. However, it is preferable not to use ferromagnetic or paramagnetic materials because they affect the magnetic field generated by the introduction of high frequency. Therefore, stainless steel, which is a non-magnetic material such as austenitic stainless steel, can be used. As the insulator substrate, a glass substrate, a quartz substrate, a sapphire substrate, an alumina substrate, an AlN substrate, a plastic substrate, a ceramic substrate, etc. can be used. As the semiconductor substrate, a silicon substrate, a SiC substrate, a carbon substrate, a compound semiconductor substrate, etc. can be used. In this specification, unless otherwise specified, the main substrate is described as a silicon substrate, which is a semiconductor substrate.

[0115] The lower substrate 203 may be made of various materials such as a conductive substrate, an insulating substrate, a semiconductor substrate, etc., and the specific material is the same as that of the main substrate 201. In this specification, unless otherwise specified, the lower substrate is described as a glass substrate, which is an insulating substrate. The main substrate 201 and the lower substrate 203 may be attached to each other by a method of bonding using an adhesive, a fusion method in which the attachment surfaces are melted and joined, a room temperature bonding method, a high temperature bonding method, a diffusion bonding method, etc. In the case of a semiconductor substrate such as a silicon substrate or a conductive substrate and a glass substrate, an electrostatic bonding (anodic bonding) method may also be used. An insulating film, a metal film, etc. may be formed on the lower surface of the main substrate 201 by a CVD (chemical vapor deposition) method or a PVD (physical deposition) method, and then the lower substrate 203 may be attached to the main substrate 201. Next, as shown in FIG. 6(a), a photosensitive film 233 such as a photoresist is formed on the upper surface of the main substrate 201 by a coating method or a sheet attachment method, and a window is opened by a photolithography method to form a photosensitive film pattern 233. This photosensitive film pattern 233 is for forming a through hole (which may be considered as a through chamber) in the main substrate 201. An insulating film or a metal film may be formed between the main substrate 201 and the photosensitive film. These insulating films and metal films serve as protective films for the main substrate 201, and also serve as an etching stopper when the photosensitive film 233 is completely etched after the photosensitive film 233 is also etched during etching of the main substrate 201.

[0116] Next, the main substrate 201 in the windowed portion is etched using the patterned photosensitive film 233 as a mask. If the main substrate 201 is silicon, CF, SF, CCl, SiCl, Cl, Br, etc. can be used as the etching gas, and it is desirable for the through-hole (cavity) to be a pattern as perpendicular to the main substrate surface as possible, and it is desirable to etch in a shape faithful to the photosensitive film pattern 233 (indicated by dotted line 234 in FIG. 6(a)). Examples of such vertical etching methods include RIE (reactive ion etching), Bosch, and cryo-processing.

[0117] When the lower substrate 203 is a glass substrate, the etching selectivity can be made large in the above etching gas and etching method, so that even if the silicon of the main substrate 201 is overetched in the thickness direction and the entire surface of the main substrate 201 is etched uniformly, the etching amount of the lower substrate 203 is small. For example, when the thickness of the main substrate 201 is set to 500 μm and the etching selectivity is set to 50, even with 25% overetching (this degree of overetching can completely form through holes in the entire main substrate 201), the etching amount of the lower substrate 203 is at most 5 μm. Therefore, a thickness of 10 μm is sufficient for the lower substrate, but it is preferable to make it about 100 μm or more in order to maintain a certain degree of strength. Later, another substrate may be attached to the lower substrate 203 for reinforcement. There is also a method in which a thick lower substrate 203 (for example, 300 μm or more) is attached and then thinned to a thickness of 100 μm or less by a polishing method (CMP method or BG method) or an etch-back method.

[0118] FIG. 6(b) is a cross-sectional view after etching the main substrate 201 to form a through hole and removing the photosensitive film 233. This cross-section is a view seen in the longitudinal direction (left and right) of the cavity, and corresponds to FIG. 5(a), in which the substrate side walls 201S-(A), 201S-(1), 201S-(i){i=1, 2, . . .}, 201S-(B), etc. are formed, and the cavities (which may also be called through holes, through grooves, or through chambers) 204C-(A), 204C-(i), 204C-(B), etc. are formed. Here, the parentheses ( ) mean that half of the cavity or substrate side wall is formed, as described later. Therefore, here, the substrate thickness of the main substrate 201 is h2 / 2. In FIG. 6(a), the main substrate 201 (201H) is labeled with H, indicating half. The substrate side wall 201S is formed as a main substrate side wall that is nearly perpendicular to the front or back surface of the main substrate 201. However, even if it cannot be formed nearly perpendicular, it is possible to obtain the desired characteristics as an accelerator by keeping it within 90 degrees ±10 degrees. Even if it exceeds this, it is possible to control the speed and direction of the charged particles by adjusting the high frequency input voltage, the conditions of the charged particle generator, the input voltage of the focusing electromagnet, etc.

[0119] 6(c) and (d) are views of the substrate side wall 201S viewed from a direction perpendicular to the longitudinal direction of the cavity 204 (the traveling direction of the charged particles, the left-right direction in FIG. 6(a) and FIG. 6(b)). That is, they are views showing a method of forming the central hole 205. After forming the substrate side wall 201S shown in FIG. 6(b), a photosensitive film 235 is formed (formed using a photosensitive sheet attachment method or a photosensitive film coating method plus a photolithography method), and a window 236 for forming the central hole 205 is opened. The photosensitive film 235 may be formed after forming an insulating film on the surface of the main substrate 201. Using the patterned photosensitive film 235 as a mask, the main substrate 201 is etched from the window portion 236 to form the central hole 205. When the shape of the central hole is rectangular, the vertical length is e1 and the horizontal length is e2, and as shown in FIG. 6(d), which shows the state after removing the photosensitive film 235, the depth (vertical length) of the central hole at this stage is 1 / 2×e1. Although the cavity is not visible in FIG. 6(c) and (d), it exists in front of or behind this substrate side wall 201 (for example, 201S-(i)) {i=1, 2, 3, . . .}, and the boundary is shown by the dotted line 237. As can be easily seen, the process of forming the central hole 205 in FIG. 6(c) and (d) can also be performed before forming the substrate side wall 201S and the cavity 204 shown in FIG. 6(b), i.e., before FIG. 6(a). This has the advantage that it is easier to form the photosensitive film pattern because there is no unevenness such as a cavity.

[0120] Next, as shown in FIG. 6(e), an insulating film 238 is formed on the main substrate 201 and in the through hole 204. This insulating film 238 is formed when the main substrate 201 is a semiconductor or a conductor and there is a problem of electrical conduction with the conductor film 206 formed later. Alternatively, it is formed as a film for improving adhesion with the conductor film. When the main substrate 201 is an insulator, it is not necessary because it does not conduct electricity, but an insulating film can be formed to improve adhesion. The insulating film 238 is formed by a CVD method, a PVD method, or the like. For example, it is a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a silicon oxynitride film (SiNxOy). When the main substrate 201 is silicon, it can also be formed by oxidation or nitridation. After this, the conductor film 206 is formed. This conductor film 206 is for forming an accelerating electric field by high frequency, so it is better that it has a high conductivity. In addition, it is better that it is a non-magnetic material (including a diamagnetic material) that does not affect the generation of a magnetic field. For example, copper, gold, silver, Ti, Zr, Ta, tungsten, aluminum, carbon (e.g., conductive nanotubes), various silicides, alloys thereof, conductive PolySi, and composite films thereof are preferable. These conductive films can be formed by CVD, PVD, or plating. The conductive film 206 may be formed after forming an adhesion improving film for improving adhesion between the conductive film 206, the insulating film 238, the main substrate 201, and the lower (upper) substrates 202 and 203. Examples of the adhesion improving film include titanium (Ti) and titanium nitride (TiN).

[0121] Since the conductive film in the cavity other than the charged particle accelerator portion needs to be removed or patterned, a photosensitive film is formed and patterned, and the unnecessary portion of the conductive film 206 is etched. A conductive film 206 is formed inside the cavity (acceleration cavity) 204C-(i) in the charged particle accelerator, the high frequency introduction chamber 204C-(A), and the high frequency output chamber 204C-(B). After patterning the conductive film 206, an insulating film for a protective film can be formed, but if a protective film is not required, it does not have to be formed.

[0122] FIG. 7 shows the details of the process. FIG. 7 shows the process from the formation of the substrate side wall to the patterning of the conductive film, and for simplicity, only a part of the structure shown in FIG. 6 is shown. As shown in FIG. 7(a), after the substrate side wall 201S (201S-(A), 201S-(1), etc.) and the cavity 204 (204C-(A), 204C-(1), etc.) are formed, the insulating film 238 is formed, then the conductive film 206 is formed, and further the photosensitive film 241 is formed. The photosensitive film 241 is formed by a coating method or by attaching a photosensitive sheet and softening the sheet. Next, as shown in FIG. 7(b), a desired pattern 241 is formed by an exposure method (including development and baking), and the photosensitive film in the part where the conductive film 206 should be removed is removed to open a window. The conductive film 206 exposed in the opened part is etched and removed by a dry etching method or a wet etching method. If a protective film or the like is present on the conductive film 206, the protective film or the like is etched away before etching the conductive film 206. If an insulating film 238 is present underneath the conductive film 206 after etching and is to be removed as well, the insulating film 238 is also etched away by dry etching or wet etching. Thereafter, the photosensitive film 241 is removed, and the conductive film 206 is formed in the desired portion, as shown in FIG. 7(c). When the conductive film 206 is to be connected inside an accelerator, the conductive film 206 on the convex portion of the substrate side wall 201S can be left. When a conductive film is formed in the central hole, a photosensitive film may be formed (left) in the central hole portion.

[0123] A method of laminating a thick conductive film by plating in the portion where the conductive film 206 is to be left will be described. The conductive film 206 only needs to be a seed (seed) for plating, so it is sufficient to laminate it thinly. For example, when the conductive film 206 is copper, about 100 nm is sufficient. After FIG. 7(a), a window is opened in the portion where the conductive film 206 is to be laminated. That is, as shown in FIG. 7(d), the photosensitive film 242 is patterned, and the acceleration cavity portion where the conductive film 206 is to be laminated is opened. Therefore, the patterning is the opposite of that in FIG. 7(b). In this state, the conductive film 206 is immersed in a plating solution (for example, copper sulfate solution for copper plating) and a plating film 243 such as copper is plated to a predetermined thickness on the exposed conductive film 206 portion by applying an electric field. If an electroless plating method is used, the conductive film 206 to be laminated first may not be necessary. After that, the photosensitive film 242 is removed, and then the thin conductive film 206 is etched. However, since the thickness of the conductive film 206 is thinner than that of the plating film 243 (+206), the entire surface is etched with an etching solution or etching gas for the conductive film 206. In this way, no new mask (photosensitive film, etc.) is required, and the conductive films 206 and 243 can be formed only in the desired areas.

[0124] The same structure is formed on the upper substrate 202 by the process shown in Fig. 6(a)-(e). The charged particle accelerator of the present invention is (almost) symmetrical with respect to the center of the cavity 204 in the vertical and horizontal directions. Therefore, as shown in Fig. 6(f), the structure shown in Fig. 6(e) formed on the lower substrate 203 and the structure shown in Fig. 6(e) formed on the upper substrate 202 are attached to each other on the upper surfaces of the main substrate 201. Since the upper substrate 202 and the lower substrate 203 are, for example, glass substrates, visible light passes through the cavity portion 204 without the conductive film 206, so that the upper substrate (upper substrate 202 and main substrate 201) and the lower substrate (lower substrate 203 and main substrate 201) can be directly aligned, and extremely accurate alignment can be achieved. Since the accelerator of the present invention can be fabricated by the LSI process, the pattern accuracy is 1 μm or less, so if the alignment accuracy is 3 μm, the upper substrate and the lower substrate can be attached with an accuracy of 5 μm or less. This accuracy is sufficient for controlling the accelerator.

[0125] The main substrates can be firmly attached to each other by room temperature bonding, diffusion bonding, high temperature bonding, or by using an adhesive. If an insulating film exists in the attachment portion 239 and the adhesion is insufficient, the insulating film in this portion can be removed and the main substrates (e.g., silicon) can be attached to each other by room temperature bonding, surface activation, high temperature bonding, diffusion bonding, or the like. Alternatively, a metal film or adhesive can be attached to this portion, and the upper substrate and the lower substrate can be firmly attached by room temperature bonding, or by applying heat or pressure. Furthermore, a thin glass substrate can be sandwiched between this portion and the upper and lower main substrates (e.g., silicon) can be firmly attached by electrostatic bonding (anodic bonding). In addition, if a conductive adhesive is used, the conductive film 206 formed on the upper substrate and the conductive film 206 formed on the lower substrate can be electrically connected. Even if a conductive adhesive is not used, the conductive film 206 can be electrically connected by room temperature bonding or by applying moderate temperature or pressure. Here, S1 is the bonding surface, and the center of the accelerating cavity almost overlaps with S1. Moreover, the center of the central hole also almost overlaps with S1.

[0126] FIG. 6(g) is a cross-sectional view of the substrate side wall 201S in FIG. 6(f) viewed from a direction perpendicular to the longitudinal direction of the cavity. In the figure, the upper substrate (upper substrate 202 and main substrate 201) and the lower substrate (lower substrate 203 and main substrate 201) are attached at the bonding surface S2, and the boundary of the cavity is indicated by a dashed line 237. If the upper substrate 202 and the lower substrate 203 are substantially the same substrate, the upper and lower substrates are substantially symmetrical with respect to the bonding surface S2. A central hole 205 is formed at the center. If the central hole 205 is rectangular, the length is e1 and the width is e2, as can be seen from FIG. 6(d). In the central hole 205, an insulating film 239 such as a silicon oxide film may be laminated on the surface of the substrate side wall 201S, and a conductive film 206 may be further formed. In FIG. 6(g), the conductive film 206 between the upper substrate and the lower substrate 203 is removed, but this removal is performed by masking the portion of the conductive film 206 to be left with a photosensitive film, opening a window in the photosensitive film for the portion to be removed, and etching the conductive film 206 with an etching solution or etching gas. The insulating film 239 may be removed from the bonding surface (attachment surface) S2. In this case, the main substrates 201 and 201 are bonded together. Also, a thin glass substrate may be sandwiched between the main substrates 201 (201(U) since it is the upper side) and the main substrates 201 (201(B) since it is the lower side) and firmly attaching them by electrostatic (anode) bonding.

[0127] In the above manner, a charged particle accelerator can be fabricated using flat substrates (including the main substrate, the lower substrate, and the upper substrate). Conventionally, the disks to be placed in the accelerating tube were fabricated one by one, and the accelerating cavities were also fabricated one by one and then assembled, which resulted in a large device, which required a huge assembly time and cost, and was difficult to improve accuracy. However, in the case of the present invention, an LSI process is used or applied, so that it is possible to fabricate a large quantity, inexpensively, and with high accuracy (the alignment error is at most 1 to 5 μm or less).

[0128] FIG. 8 is a diagram showing a method for fabricating a charged particle accelerator in the case where a glass substrate 251 is sandwiched between an upper substrate (main substrate 201U, upper substrate 202) and a lower substrate (main substrate 201B, lower substrate 203) and attached by electrostatic bonding. Some parts overlapping with FIG. 6 and FIG. 7 are omitted. The silicon substrate 201 (referred to as 201B since it is the lower substrate) and the glass substrate or quartz glass substrate which is the lower substrate 203 are bonded by anodic bonding. Next, a glass substrate or quartz glass substrate 251 is bonded to the other side of the silicon substrate 201 by anodic bonding. At this time, it is necessary to apply a positive (+) voltage to the silicon substrate 201, so a positive (+) voltage is applied from the side of the silicon substrate 201, or the periphery of the lower substrate 203 is etched and removed by photolithography to expose the silicon substrate 201, and a positive (+) voltage is applied from the exposed portion. (Note that the silicon substrate 201 can be anodically bonded even if it is a conductive substrate such as a metal plate. Also, if a thin metal film such as aluminum is laminated on the silicon substrate 201 and then bonded to a glass substrate, lower temperature bonding is possible than anodic bonding when no metal film is used.) The thinner the glass substrate 251 etc. is, the better, so it is 100 μm or less, preferably 50 μm or less, and more preferably 20 μm or less. 10 μm or less is also acceptable. One method for thinning it in this way is to first attach a thick glass substrate etc., and then thin it by polishing methods (CMP, BG, etc.) or etching methods (wet, dry, etc.).

[0129] Next, a pattern of the photosensitive film 233 for forming the substrate side wall 201S is formed by photolithography. Next, the pattern of the photosensitive film 233 is used to etch and remove the glass substrate 251 in the windowed region. In order to etch as faithfully as possible to the pattern of the photosensitive film 233, anisotropic dry etching (vertical etching) is preferable, but wet etching or isotropic dry etching may also be used in consideration of the amount of side etching. After the glass substrate 251 is etched and removed, the silicon substrate 201 is etched and removed. In order to etch as faithfully as possible to the pattern of the photosensitive film 233, anisotropic dry etching (vertical etching) is preferable, but wet etching or isotropic dry etching may also be used in consideration of the amount of side etching. In FIG. 8(a), the vertical etching line 234 is indicated by a dashed line.

[0130] The central hole 205 is also formed by patterning a photosensitive film on the glass substrate 251, and then etching a part of the glass substrate 251 and the main substrate 201. If the size of the central hole is equal to or smaller than the thickness of the glass substrate 251, only the glass substrate 251 needs to be etched. Conversely, the thickness of the glass substrate 251 can be made to match the size of the central hole. In this case, the etching selectivity between the glass substrate 251 and the main substrate 201 is increased to make the size of the central hole equal to the thickness of the glass substrate, and the size of the central hole can be controlled very accurately. The central hole can also be patterned before forming the substrate side walls 201S-(A), 201S-(i){i=1, 2, . . .}, 201S-(B) and the through holes 204C-(A), 204C-(i), and 204C-(B). Next, an insulating film 238 is formed, and then a conductive film 206 is formed. (Fig. 8(b)) Next, the necessary patterning of the conductor film is performed by photolithography and etching. (Fig. 8(c)) A conductor film 206 is formed on the inner surfaces of through holes 204C-(A), 204C-(i) {i=1, 2, ...}, 204C-(B), which will become the acceleration cavities. In addition, conductor film 206 is left in a necessary portion on the inner surface of central hole 205 connecting them. The other side (the upper upper substrate 202 side in FIG. 8) is also prepared in the same manner, and these are attached. (FIG. 8(d)) The conductive film 206 is also attached to the side surface of the glass substrate 251, so that these can be attached and connected by applying pressure or heat treatment. Furthermore, if necessary, a conductive adhesive or solder metal can be attached to this connection portion and attached to it, so that a sufficient connection can be ensured. The conductive adhesive or solder metal can be applied by tracing with a dispenser or the like. Alternatively, a dispenser or the like having an injection port the same as the connection portion can be prepared, and the conductive adhesive or solder metal (melted or paste) can be applied to the connection portion from the injection port at once. Alternatively, the necessary portion of the conductive film is patterned with a photosensitive film to expose it, and the solder metal is precipitated on the exposed portion by plating. These can be attached and heat-treated. Furthermore, after this, an opening for vacuuming or for purging and cleaning is opened in the upper substrate 202 or the lower substrate 203. This opening can also be used to inject a plating liquid to plate the connection portion. Alternatively, a selective CVD gas (e.g., WF6) can be introduced from the opening, and a metal film (e.g., W) can be selectively laminated on the exposed portion of the conductive film 206 such as the connection portion. Alternatively, even if the connection is insufficient, electrodes can be formed on the top and bottom, so the same high-frequency voltage can be applied from both sides. When the same objects as in FIG. 8(c) are attached to each other, the bonding surface is indicated by the dashed line 244, and the shapes are almost symmetrical above and below this bonding surface 244. Since this bonding is between glass surfaces, electrostatic anodic bonding cannot be performed, so if one side does not use the glass substrate 251, electrostatic anodic bonding can be used when bonding the top and bottom, and a strong bond can be achieved.

[0131] Next, as shown in FIG. 8(e), contact holes are formed in the lower substrate 203 and the insulating film 238, a conductive film is formed there, and a contact 245 is formed to connect to the conductive film 206. Furthermore, a conductive film / electrode / wiring 246 is formed to connect to this contact 245. Similarly, contact holes are formed in the upper substrate 202 and the insulating film 238, a conductive film is formed there, and a contact 248 is formed to connect to the conductive film 206. Furthermore, a conductive film / electrode / wiring 249 is formed to connect to this contact 248. As shown in FIG. 8(e), these contacts 245, 248 and electrode / wiring 245, 249 can be fabricated so as to be connected to the conductive film 206 formed on the inner surface of each of the cavities 204C-A, B, 204C-i, and no increase in the process is required. This allows voltages to be applied individually from the outside to the conductive films 206 formed on the inner surfaces of each of the cavities. Furthermore, the upper and lower conductive films 206 are joined together at the joining surface 244, but even if the joining is insufficient, the same potential can be achieved because (high frequency) voltages can be applied from the upper and lower electrodes 246 and 249, respectively. Also, an opening 247 for evacuation is formed in the lower substrate 203, and an opening 250 for evacuation is formed in the upper substrate 202. These openings 247 and 250 can also be made simultaneously for each cavity, and the pressure of each cavity can be controlled individually. Also, since very small spaces can be individually evacuated, a cavity with an ultra-low pressure can be realized. As described above, using this opening, a plating solution can be introduced into the cavity to plate the connection part of the internal conductive film, or a gas for selective CVD can be introduced into the cavity to laminate a selective conductive film on the connection part of the internal conductive film. As described above, a very small acceleration cavity can be made very simply. Next, the deflection electromagnet will be described. The deflection electromagnet can be produced by using coils arranged above and below the quadrupole magnets shown in FIG. 4 and FIG. 11 to FIG. 14. FIG. 15 is a diagram showing the charged particle passing cavities such as the deflection electromagnets 25, 30, 34, and 37 in FIG. 1 and the electromagnets arranged therein. FIG. 15(a) is a diagram showing the charged particle passing cavity 257 of the deflection electromagnet part and the arrangement of the coils. The charged particle passing cavity 257 is a cavity whose central orbit has a curvature of radius R and follows the curvature. A large number of micro coils 258, which are electromagnets, are arranged above and below this cavity. The micro coils 258 are densely arranged to cover the entire charged particle passing cavity 257. The charged particle G enters from the entrance of the charged particle passing cavity 257, receives the Lorentz force due to the vertical magnetic field in the charged particle passing cavity 257, performs a circular motion with an orbit radius R, and exits from the exit of the charged particle passing cavity 257.

[0132] 15(b) shows a cross-sectional view of the charged particle passage cavity 257 along the cross section A1-A2 perpendicular to the center of curvature. The top and bottom of the through chamber 264 formed in the main substrate 261 are closed by the upper substrate 262 and the lower substrate 263. This through chamber 264 is the charged particle passage cavity 257, and is a cavity having a circular orbit with a radius R as its central orbit. A plurality of coils 260 (260-1, 2, 3) are arranged on the upper surface of the upper substrate 262. The coils 260 (260-1, 2, 3) are attached to a fourth substrate 266, which is attached to supports 265 (265-1, 2), which are attached to the upper substrate 262. The smaller the coil size (size in the plane perpendicular to the coil axis), the more the number of turns, and the larger the current flowing through the coil, the larger the magnetic field at the coil end surface. Therefore, when many small coils are arranged side by side, the magnetic field exerted on the charged particle passage cavity 257 is large. As shown in FIG. 13, the coil of the present invention can be easily made small in size, but the current that can be passed is also reduced when the wiring size is reduced. Therefore, the coil size cannot be determined in general, but when the size of the coil 260 is smaller than the charged particle passage cavity 257, multiple coils are arranged so that the entire charged particle passage cavity 257 is completely covered with the coil 260. For example, when the coil size is 0.5 mm×0.5 mm and the width of the charged particle passage cavity 257 is 1 mm, at least three coils are arranged in the width direction of the charged particle passage cavity 257 as shown in FIG. 15(b). In this case, since the central orbit of the charged particle G is approximately the center in the width direction of the charged particle passage cavity 257, it is desirable to arrange the coils so that the axis of one coil is approximately aligned with this center. This is because the magnetic field is strongest at the center of the coil end face (however, there is not much difference). The coils are arranged densely in the width direction with the coils between them. The distance between the coils (for example, the distance between coils 260-1 and 260-2) is determined when the coils are made (when the coil wiring boards are stacked and attached), and since there is no need to separate the coils, it can be made quite small. For example, the distance between the wiring can be set to about the wiring width of the coil. If the coil size is larger than the charged particle passage cavity 257, one coil is sufficient in the width direction. Even in this case, it is desirable to arrange the coil so that its axis is located above the center of the charged particle passage cavity 257.

[0133] Also, regarding the traveling direction of the charged particle in the charged particle passage cavity 257, the coils may be arranged without gaps by using the coil pattern of the coil wiring board that matches this trajectory. For example, the coils 258 are arranged as shown in FIG. 15(a). Then, the coil arrangement group is separated (or not separated) and attached to the fourth board, and attached to the upper board 262 based on the support 265 (265-1, 2) (or together). This is the same as that described in FIG. 14. The axis of the coil 260 is made perpendicular to the upper board 262 and the main board surface. Also, since it is better that the end face of the coil 260 is as close as possible to the charged particle passage cavity 257, it is attached in contact with the upper board 262 or as close as possible. It is also preferable to thin the portion 273-1 of the upper substrate 262 where the coil 260 is to be disposed (in reality, the coil 260 (260-1, 2, 3) is wider than the width of the charged particle passage cavity 257, so a recess is provided in which the entire coil 260 wider than the width of the charged particle passage cavity 257 can be inserted) and to insert the coil 260 (260-1, 2, 3) into the recess. Furthermore, it is also preferable to open the portion 273-1 of the upper substrate 262 where the coil 260 is to be disposed in the charged particle passage cavity 257 so that the magnetic field of the coil 260 is not weakened or disturbed by the upper substrate 262. In this case, since the airtight space of the charged particle passage cavity 257 is broken, it is preferable to reliably attach the outer periphery of the lower end surface of the coil 260 (in this case, the outer periphery of the multiple coils) to the upper substrate 262. For example, adhesive (solder metal) is applied to the outer periphery of the coil, or room temperature bonding, high temperature bonding, diffusion bonding, or electrostatic anodic bonding is reliably performed. Furthermore, the space 269 in which the coil is disposed is made an airtight space, and an opening 270 for evacuation is provided in the fourth substrate 266, and the airtight space 269 is made ultra-low pressure through this opening 270 for evacuation. Naturally, an opening for evacuation is also provided in the upper substrate 262 or the lower substrate 263 for the charged particle passage cavity 257, so that evacuation can be performed through this opening. As a result, the charged particle passage cavity 257 can be made into an ultra-ultra-low pressure space.

[0134] Similarly, coils 259 (259-1, 2, 3) are arranged on the lower substrate 263. A recess 273-2 or an opening 273-2 may be provided to bring the end face of the coil 259 (259-1, 2, 3) closer to the charged particle passing cavity 257. The coil 259 is attached to the fourth substrate 268, the support 267 (267-1, 2) is attached to the lower substrate 263, and the fourth substrate 268 is attached to the support 267. The space 271 in which the coil 259 is arranged may be an airtight space, and an opening 272 for evacuation may be provided in the fourth substrate 268. It is desirable that the coils 259 on the lower substrate 263 side are the same as the coils 260 on the upper substrate 262 side, and are arranged symmetrically with respect to the charged particle passing cavity 257, with the same number of coils. If they have the same characteristics, it is easy to control the magnetic field in the charged particle passing cavity 257. However, even with coils of different sizes, the magnetic field in the charged particle passage cavity 257 can be controlled in the same way by adjusting the magnitude of the current flowing through them. In the present invention, the shape of the coil can be set to suit any shape of the cavity in which the coil is placed. For example, the coil wiring can be made into any curved shape. In addition, the coil size can be set freely, and the number and shape of the coil arrangement can be freely changed. The bending magnet parts 25, 30, 34, 37, etc. of the synchrotron shown in FIG. 1 are fan-shaped cavities with a curvature of radius R, and coils corresponding to them can be freely arranged. Of course, the arrangement shape and number of quadrupole electromagnets and focusing electromagnets in a linear cavity can also be freely set.

[0135] As already mentioned, the accelerator of the present invention can be manufactured in a lump, so that the substrate can be enlarged and further devices can be connected. The micro-accelerator, which is the synchrotron shown in FIG. 1, can be connected to a synchrotron one size larger, and they can be manufactured at the same time in one go. FIG. 16 is a diagram showing a micro-accelerator 10-1 having a circular accelerator (synchrotron) 8-1 shown in FIG. 1 connected to a circular accelerator 8-2 one size larger, and shows a double synchrotron (or a two-cycle synchrotron). The first small micro-accelerator 10-1 is surrounded by the second synchrotron 8-2. These are collectively referred to as the micro-device 10-2. The outlet 41-1 (41 in FIG. 1, but "-1" has been added to distinguish it from the outlet 41 (41-2) of the second large synchrotron) of the first small micro-accelerator 10-1 (which may be considered the same as that shown in FIG. 1) is connected to the inflector 21-2 of the second synchrotron 8-2. That is, the charged particles leaving the outlet 41-1 of the first small synchrotron 8-1 enter the storage ring 24-2, which is a cavity through which the charged particles pass in the circular accelerator 8, via the inflector 21-2. A linear accelerator 39-1 can be provided midway through the cavity leaving the circular accelerator 8 to adjust the speed of the charged particles entering the inflector 21-2. Other bending electromagnets, acceleration electrodes, deceleration electrodes, linear accelerators, focusing electromagnets, etc. may also be provided midway.

[0136] Charged particles entering the storage ring 24-2 of the circular accelerator 8-2 from the inflector 21-2 may be focused by providing a focusing electromagnet (for the horizontal direction) or a focusing electromagnet (for the vertical direction). The charged particles are deflected and accelerated by the bending electromagnet 25-2 and enter the next storage ring 27-2, where they are further accelerated by the high-frequency acceleration cavity 29-2, and focused by the focusing electromagnet 26-2 (for the vertical direction) and the focusing electromagnet 28-2 (for the horizontal direction). The charged particles are deflected and accelerated by the focusing magnet 30-2, enter the next storage ring 33-2, are converged by the focusing magnet 31-2 (for the vertical direction) and the focusing magnet 32-2 (for the horizontal direction), are deflected and accelerated by the bending electromagnet 34-2, enter the next storage ring 38-2, are converged by the focusing electromagnet 35-2 (for the vertical direction) and the focusing electromagnet 36-2 (for the horizontal direction), are deflected and accelerated by the next bending electromagnet 37-2, and enter the next storage ring 24-2. In this way, the charged particles continue to rotate while accelerating in the storage rings 24-2, 27-2, 33-2, and 38-2, and when the desired speed and the desired number of charged particles are obtained, they enter the cavity 40-2 that guides the charged particles to the outside (sometimes called the charged particle discharge cavity) and are taken out from the outlet 41-2 of the charged particle discharge cavity 40-2. A linear accelerator 39-2 may be provided in the charged particle ejection cavity 40-2 to further accelerate the charged particles. In addition, other deflection electromagnets, acceleration electrodes, deceleration electrodes, linear accelerators, focusing electromagnets, etc. may be provided in the charged particle ejection cavity 40-2.

[0137] In this way, multiple circular accelerators can be connected. This can be used to increase the speed of the charged particles. In addition, since charged particles can be stored in each storage ring, the required amount of charged particles can be prepared in a short time. For example, if the cavity diameter of the storage ring through which the charged particles pass is 1 mm, the size of the innermost ultra-compact accelerator is 50 mm in radius, the ring pitch is 3 mm, and the radius of the substrate is 270 mm, 70 circular accelerators can be arranged.

[0138] FIG. 17 is a schematic diagram showing a case where the circular accelerator 8 is divided and fabricated on a substrate. That is, it shows a method of fabricating an accelerator when the substrate cannot be made large and the circular accelerator is large compared to the substrate size. When the circular accelerator 8 as shown in FIG. 1 is quite large and, for example, a 2m×2m substrate is required, but only a 1m×1m substrate can be prepared, four 1m×1m substrates 44-1 to 44-4 (shown by dashed lines) are prepared, and 1 / 4 patterns 43-1 to 43-4 of the circular accelerator 8 are fabricated on each of them. The substrates 44-1 to 44-4 are cut at the connection patterns 45-1, 2, 3, and 4, for example, by a dicing device. The parts to be connected here are the storage rings 24, 27, 33, and 38, so the central axes of the storage rings at these parts are connected to each other. In order to ensure this connection, the cut parts are polished or etched to smooth the connection surfaces. The connection parts can be attached by various joining methods. Another material can be interposed between the connecting parts. For example, glass substrates, plastic substrates, metal substrates, etc. can be used, and these can be fused to the connecting members or electrostatic anodic bonding can be performed. If the inside of the storage rings 24, 27, 33, 38 can be kept at an ultra-low pressure, the connecting parts do not necessarily need to be firmly attached. For example, a member or box that covers this part can be prepared, and the substrates 44-1 to 44-4 and their members can be attached to it. A member that is somewhat flexible or pliable so that the axial alignment of the storage rings 24, 27, 33, 38 can be adjusted is preferable. It is even better if a vacuum line is provided on the member so that the inside can be vacuumed. By repeating this process, an extremely large circular accelerator can be manufactured. In addition, this method can be applied to the manufacture of ionization sources and long linear accelerators, as mentioned above. That is, a large number of linear accelerators can be manufactured in a substrate, and they can be cut by dicing or the like, and their cavities can be connected to each other.

[0139] 18 is a diagram showing a microwave ion source of the present invention. The microwave ion source of the present invention includes a main substrate 161 with an upper substrate 162 attached to the upper surface and a lower substrate 163 attached to the lower surface, and includes through-chambers 164-1, 164-2, and 164-3 formed in the main substrate, and the through-chamber 164-1 is a waveguide into which a microwave or high-frequency (hereinafter, high-frequency) oscillator introduces a high-frequency wave 160 through an opening 166-1 opened in the upper substrate 162 or the lower substrate 163 (hereinafter, also referred to as the waveguide chamber 164-1). The through-chamber 164-2 is a discharge chamber adjacent to the waveguide chamber 164-1 and separated by a substrate side wall 161-2 having a central hole 165-1 (hereinafter, also referred to as the discharge chamber 164-2), and a high-frequency wave is incident from the waveguide chamber 164-1 through the central hole 165-1 of the substrate side wall 161-2. A coil 169 surrounded by coil wiring is arranged around the discharge chamber 164-2, and this coil 169 generates a magnetic field B1 in the coil axis direction in the discharge chamber 164-2. Electrons in the discharge chamber 164-2 are accelerated by the high-frequency electric field, and discharge occurs by collision ionization of the gas, and plasma is generated. A high-frequency oscillator (not shown) is connected to the opening 166-1, and it is desirable to provide a seal part 168-1 at the connection part so that the high-frequency wave and the vacuum do not leak from the connection part between the high-frequency oscillator and the waveguide chamber 164-1. This seal part 168-1 can be attached to an insulating material substrate such as glass or plastic with an adhesive or the like. Incidentally, this waveguide chamber 164-1 can be provided outside the main substrate 161 and omitted. In that case, the high-frequency wave 160 can be introduced directly into the discharge chamber 164-2. An opening 166-2 for introducing gas is opened in the upper substrate 162 and / or the lower substrate 163 of the waveguide chamber 164-1, and various gases that are the source of ions are introduced from this opening 166-2 and sent to the discharge chamber 164-2 together with the high frequency. In addition, an opening 167-1 for evacuation is provided in the upper substrate 162 and / or the lower substrate 163 of the waveguide chamber 164-1, and the waveguide chamber 164-1 can be set to a predetermined pressure. Furthermore, an opening can be provided in the upper substrate 162 and / or the lower substrate 163 of each through chamber to measure pressure or temperature. In addition, the temperature of each through chamber can be controlled by irradiating infrared rays from the outside.Alternatively, it can be heated from the outside with a heater, hot water, or hot air, and can also be cooled by using a Peltier element, or by cold water, cold air, cold gas, liquid helium, liquid nitrogen, or other cold liquids. Its small volume makes it easy to control.

[0140] The through chamber 164-3 adjacent to the discharge chamber 164-2 is an ion extraction electrode chamber, and is separated from the discharge chamber 164-2 by a substrate sidewall 161-3 having a central hole 165-2. The discharge chamber 164-2 has a substrate sidewall 161-4 which is an extraction electrode and has a central hole 165-3, a substrate sidewall 161-5 which is a deceleration electrode / focus electrode and has a central hole 165-4, and a substrate sidewall 161-6 which is an acceleration electrode and has a central hole 165-5. Ions (charged particles) generated in the discharge chamber 164-2 are attracted by the electric field of the extraction electrode 161-4, pass through the central hole 165-2 of the partition substrate side wall 161-3, accelerate through the central hole 165-3 of the extraction electrode 161-4, converge through the central hole 165-4 of the adjacent deceleration electrode / focus electrode 161-5, and accelerate through the central hole 165-5 of the adjacent acceleration electrode 161-6. By repeating this process, the ions are accelerated, decelerated, and focused, emitted to a bending magnet room, focused in a quadrupole magnet room, or emitted to various through-holes for ion implantation or other purposes such as a mass spectrometry room. In the ion extraction electrode room, an ion beam with the desired speed and current density is obtained by combining acceleration electrodes and deceleration / focus electrodes.

[0141] The side walls of the substrate having a central hole for partitioning the through-chambers do not usually have a conductive film laminated thereon, so acceleration or deceleration does not occur here. The side walls of the substrate 161-4, which are extraction electrodes and have a central hole 165-3, have conductive films 170-1 (front side) and 170-2 (rear side) laminated thereon. If the main substrate 161 is an insulator, the conductive film 170 can be formed directly, and if the main substrate 161 is not an insulator, an insulating film may be interposed between the main substrate 161 and the conductive film 170. This conductive film 170 is connected to a conductive film 176 formed on the lower surface of the upper substrate 162 and / or a conductive film 175 formed on the upper surface of the lower substrate 163, and further connected to contacts 173 formed on the upper substrate 162 and the lower substrate 163, and further connected to a conductive film electrode wiring 172 formed on the upper surface of the upper substrate 162 and / or a conductive film electrode wiring 174 formed on the lower surface of the lower substrate 163. Therefore, a voltage can be applied to the conductive film 170 from the conductive film electrode wiring 172 and / or 174. If the ions are negatively charged, a positive voltage is applied to the extraction electrode 161-4 to attract and accelerate the ions. If the ions are positively charged, a negative voltage is applied to the extraction electrode 161-4 to attract and accelerate the ions. In order to prevent the ions from scattering or from accelerating too much, a deceleration / focus electrode 161-5 is provided. Its structure is the same as that of the extraction electrode 161-4. If the ions are negatively charged, a negative voltage is applied to the deceleration / focus electrode 161-5 to converge the ions and decelerate them. If the ions are positively charged, a positive voltage is applied to the deceleration / focus electrode 161-5 to converge the ions and decelerate them. The acceleration electrode 161-6 has the same structure and voltage application method as the extraction electrode 161-4. In the present invention, since a plurality of these substrate sidewall electrodes can be freely arranged, the ion beam G can be controlled by freely selecting the positive / negative voltage and the magnitude of the applied voltage to each substrate sidewall electrode.

[0142] An opening 166-3 for introducing gas may be provided in the upper substrate 162 and / or the lower substrate 163 of the discharge chamber 164-2, and the gas may be introduced from there into the discharge chamber 164-2 and ionized. Also, an opening 167-2 for drawing a vacuum may be provided in the upper substrate 162 and / or the lower substrate 163 of the discharge chamber 164-2. The wiring of the coil 169 spirally surrounds the outside of the discharge chamber 164-2, which generates a magnetic field in the discharge chamber 164-2 (first magnetic field generation), and to assist this, a plurality of magnets 178 as second magnetic field generation means are arranged inside the coil 169 and outside the discharge chamber 164-2. The magnets 178 may be permanent magnets, and have the same polarity in the longitudinal direction of the discharge chamber 164-2 (also the direction of ion travel), and are arranged at regular intervals around the discharge chamber 164-2 as shown in FIG. 18(b) (FIG. 18(b) is a cross-sectional view taken along A1-A2 in FIG. 18(a)). (16-pole magnets in FIG. 18) The polarity of each magnet 178 on the surface facing the discharge chamber 164-2 is the same, and the polarity of adjacent magnets is opposite. As a result, the magnetic field generated between the magnets becomes a multipole magnetic field (shown by dashed lines) B2 localized around the inner surface of the discharge chamber 164-2. This multipole magnetic field B2 becomes smaller as it approaches the inside from the inner surface of the discharge chamber 164-2. As a result, the magnetic field B2 becomes considerably weaker near the center of the discharge chamber 164-2, and a uniform plasma is generated near the center of the discharge chamber 164-2. At the same time, the magnetic field B2 suppresses the intrusion of plasma into the inner surface of the discharge chamber 164-2, reducing plasma loss. Furthermore, these magnets 178 can further stabilize the plasma characteristics by high frequency and reduce fluctuations in the ion current caused by the main magnetic field B1. Although the plasma in the discharge chamber 164-2 can be stabilized and the amount of ion beam G can be stably generated by precisely controlling the main magnetic field B1, the placement of the magnets 178 allows for even more precise control.

[0143] When the magnet 178 is a permanent magnet, for example, a ferrite magnet, a neodymium magnet, a samarium-cobalt magnet, an Fe-Cr-Co magnet, an Fe-Pt magnet, an Fe-Al-Ni-Co magnet, or a Co-Pt magnet can be used. The magnet 178 may be a permanent magnet or a plurality of microcoils of the present invention arranged in a row. That is, in the case of a 16-pole magnet, a plurality of microcoils are arranged so that each pole has the same polarity on the same side. Alternatively, each pole may be a single coil. In that case, the coil is wound in a long and thin shape in the direction of ion travel. When a microcoil is used, the magnetic field of each coil can be controlled by the applied current, so that a more precise magnetic field B2 can be generated and controlled. When the magnet 178 is arranged, a recess 181 or 182 may be formed in the upper substrate 162 or the lower substrate 163 in the region where the magnet 178 is arranged in the discharge chamber 164-2, and the thickness of the substrate in that portion may be thinned, and the magnetic field generation in the discharge chamber 164-2 can be strengthened accordingly. Furthermore, when arranging the magnet 178, the fourth substrate 168 and the fifth substrate 177 can be attached to the upper substrate 162 and the lower substrate 163 outside the discharge chamber 164-2, leaving the space above the magnet 178 open, as shown in FIG. 18. In particular, when arranging a microcoil, leaving this space open makes it easier to pass a current through the microcoil terminals. For example, wire bonding can be performed to the microcoil terminals. The fourth substrate 168 (168-2, 3) can also be used as the sealing substrate 168-1. In other words, the same substrate can be attached to the upper substrate 162.

[0144] A space is provided above the magnet 178, and the sixth substrate 179 is attached to the fourth substrate 168, and the seventh substrate 180 is attached to the fifth substrate 177, as shown in FIG. 18. At this time, the coil wiring 169 is formed on the sixth substrate 179 and the seventh substrate 180, and the contact 183-1 connected to the coil wiring 169 is formed on the sixth substrate 179 and the seventh substrate 180, and is connected to the contact 183-2 formed on the fourth substrate 168. Furthermore, the contact 183-2 formed on the fourth substrate 168 is connected to the contact 183-3 formed on the upper substrate 162. Furthermore, the contact 183-3 formed on the upper substrate 162 is connected to the contact 183-4 formed on the main substrate 161. Furthermore, the contact 183-4 formed on the main substrate 161 is connected to the contact 183-5 formed on the lower substrate 163. Furthermore, contact 183-5 formed on lower substrate 163 is connected to contact 183-6 formed on fifth substrate 177. Then, contact 183-7 formed on the seventh substrate, which is connected to coil wiring 169 fabricated on seventh substrate 180, is connected to contact 183-6 formed on fifth substrate 177. As a result, coil wiring 169 is connected in a spiral shape, surrounding discharge chamber 164-2, and coil 169 is fabricated. When magnet 178 is not arranged, the fourth to seventh substrates are not necessary, and it is only necessary to form the coil wiring patterns on upper substrate 162 and lower substrate 163.

[0145] The contacts 183 (183-1 to 7) of the coil wiring 169 are formed by forming contact holes in each substrate, and if the substrate is not an insulator, an insulating film is formed on the inner surface of the contact hole. Next, if necessary, a conductive film for adhesion or seed is laminated on the inner surface of the contact hole, and then the inside of the contact hole is filled or semi-filled with a conductive film using a plating method, a squeeze method, a molten metal pouring method, a dispense method, an electroforming method, a CVD method, a selective CVD method, or the like. These may be attached in sequence. As shown in FIG. 18(b), the magnet group 184 (184-1, 2) arranged between the upper substrate 162 and the lower substrate 163, i.e., on the side of the discharge chamber 164-2, is inserted into the magnet group insertion through-chambers 164-4 and 164-5, which are through-chambers formed by sandwiching the discharge chamber 164-2 and the substrate side walls 161-4 and 161-5. This insertion method is the same as the coil insertion method already described. The magnet group 184 (184-1, 2) can be fabricated by sequentially stacking the magnets 178 with the non-magnetic bodies 183 interposed therebetween. This fabrication method is also the same as the coil fabrication method.

[0146] Alternatively, the main substrate 161 may be divided into several parts, and the magnet groups 184 (184-1, 2) and non-magnetic bodies 183 may be mounted on the divided main substrates and attached in order to arrange the magnet groups 184 (184-1, 2) on the side surfaces of the discharge chamber 164-2. In this case, the thickness of the magnets 178 in the magnet groups 184 (184-1, 2) and the non-magnetic bodies 183 interposed therebetween may be determined. It is preferable to match the thickness of the divided main substrate 161 to that of the divided main substrate 161. 18, an upper magnet 178 can be attached to the lower surface of the sixth substrate 179, and the magnet 178 can be disposed above the discharge chamber 164-2. In this case, it is desirable to uniform the thickness of the fourth substrate 168, the depth of the recess 181, and the thickness of the magnet 178, and to place the magnet 178 as close to the discharge chamber 164-2 as possible. Similarly, a lower magnet 178 can be attached to the upper surface of the seventh substrate 180, and the magnet 178 can be disposed below the discharge chamber 164-2. In this case, it is desirable to uniform the thickness of the fifth substrate 177, the depth of the recess 182, and the thickness of the magnet 178, and to place the magnet 178 as close to the discharge chamber 164-2 as possible.

[0147] The space 185 formed by the upper substrate 162, the fourth substrate 168, and the sixth substrate 179 can be made airtight, and the space 186 formed by the lower substrate 163, the fifth substrate 177, and the seventh substrate 180 can be made airtight. In this case, if a part of the upper substrate 162 and a part of the lower substrate 163 in the discharge chamber 164-2, particularly the area where the magnet 178 is placed, are removed, the magnetic field of the magnet is directly applied to the discharge chamber 164-2, so that an efficient magnetic field B2 can be generated. In this case, when the magnet 178 is attached to the upper substrate 162 and the lower substrate 163, it is sufficient to leave the minimum amount of the upper substrate 162 and the lower substrate 163 that can support the magnet 178. When the magnet 178 is attached to the sixth substrate 179 and the seventh substrate 180, the substrates 162 and 163 directly below or directly above the magnet can be removed. Similarly, the substrate side walls 161-4 and 161-5 on the side surfaces of the discharge chamber 164-2 can also be removed. Alternatively, only a portion may be left. In this case, openings for evacuating spaces 185 and 186 or for introducing gas can be provided in sixth substrate 179 and seventh substrate 180. Similarly, openings for evacuating magnet group insertion through-chambers 164-4 and 164-5 or for introducing gas can be provided in upper substrate 162 and lower substrate 163.

[0148] The size of the high frequency ion source using the substrate of the present invention is estimated. The through chamber of the present invention has a height and width of 0.1 mm to 100 mm, and larger sizes can be achieved by the adhesion method. It can also be produced by the substrate ingot method using a mold. It can also be produced by a 3D printer. The length is determined by the substrate size, but it can be 10 mm to 1000 mm, and larger sizes can be achieved by the connection method. As an example, if the thickness of the main substrate is 1 mm, the thickness of the upper, lower, and fourth to seventh substrates is 0.2 mm, and the substrate size is 600 mm x 600 mm, the height of the discharge chamber is 1 mm for one main substrate, 10 mm for 10 substrates, 50 mm for 50 substrates, and 100 mm for 100 substrates, and the width can be adjusted to the height from 1 to 100 mm, and the length can be produced up to about 500 mm. Also, if the length of discharge chamber 164-2 is 200 mm, the width and thickness of coil 169 are 1.5 mm x 1.5 mm, and the pitch is 2 mm, a coil (electromagnet) with 100 turns can be produced. In Fig. 18, coil 169 is produced by embedding a conductive film in a substrate, but it is also possible to produce coil 169 by manually or automatically winding coil wiring 169 around discharge chamber 164-2 after cutting the substrate to individually cut out the accelerator including discharge chamber 164-2. As described above, the ion generation source of the present invention using a substrate can be produced in various sizes.

[0149] Mass spectrometry is widely used in the analysis of substances, such as the composition analysis of solid surfaces and reaction solutions. Conventional mass spectrometers are not easy to manufacture because their structure is complex and the assembly of each individual part requires precision, and they are at least 1 m in size. 3 However, because of its volume of about 1000mm, it was expensive and difficult to carry. Therefore, by applying the present invention, in which a main substrate (first substrate) is attached to the top and bottom of the main substrate (first substrate), and a lower substrate (third substrate) are attached to the top and bottom of the main substrate to create a microchannel, it is possible to realize an ultra-compact and ultra-low-cost mass spectrometer.

[0150] 19 is a diagram showing an embodiment of the mass spectrometry of the present invention. Through grooves (through chambers) 305, 306, 307, 308, and 309 are formed penetrating from the upper surface to the lower surface of the main substrate 301, and the upper substrate 302 is attached to the upper surface of the main substrate 301, and the lower substrate 303 is attached to the lower surface of the main substrate 301. This attachment may be performed by using an adhesive, or when the main substrate 301 is a semiconductor substrate such as Si, carbon-based, SiC-based, or compound-based, or a conductive substrate such as a metal plate, and the upper substrate 302 or the lower substrate 303 is a glass substrate or the like, electrostatic anodic bonding may be used, or other bonding methods described in this specification or other documents may be used. The through groove 305 is a sample chamber, and is a space sandwiched between the main substrate side wall 301-1 and the substrate side wall (also called a partition wall) 301-2 that separates the sample chamber 305 from the adjacent ionization chamber 306. (The side surface is the side wall of the main substrate 301.) The sample 311 is placed in the sample chamber 305. The sample 311 is easily analyzed by inserting it from a sample opening 312 opened in a part of the upper substrate 302 and attaching it to the substrate side wall 301-1. The accelerated ion beam hits a part of the surface of the sample 311 and sputters a part of the sample. Since it is necessary that the sample to be analyzed (analytical sample) is only in the part hit by the ion beam, a sample holder may be used as the sample 311. It is also possible to attach and fix the sample 311 to the substrate side wall 301-1 by drawing a vacuum from a vacuum line 313 provided on the back side of the sample 311. When the sample chamber 205 is to be made low pressure, the vacuum line 313 may be further lowered to draw the sample 311. If it is difficult to support the sample 311 at the same low pressure, a groove may be cut in a part of the upper and lower substrates and the sample 311 may be inserted therein to support the sample 311.

[0151] An ion beam inlet 314 is opened in the upper substrate 302 of the sample chamber 305, and an ion beam 316 emitted from an ion gun 315 arranged outside the mass spectrometer 300 is directed through the ion beam inlet 314 at the sample 311 to sputter the constituent material of the sample 311. The ion gun 315 can also be arranged in the main substrate 301, but in this case, the ion beam is directed from the ion gun 315 formed on the side of the sample chamber 305 (perpendicular to the paper surface of FIG. 19) through a through groove in the main substrate 301 to the sample 311. The ion beam 316 is, for example, nitrogen (N) ions, argon (Ar) ions, xenon (Xe) ions, etc. The sputtered sample material is neutral particles 317 and ions (secondary ions) 318, and these particles proceed to the central hole 310-2 of the partition wall 301-2 and enter the ionization chamber 306. The pressure inside the sample chamber 305 may be close to atmospheric pressure, but the pressure inside the sample chamber 305 may be reduced by connecting a vacuum pump through a vacuum line 319 opened in the lower substrate 303 etc.

[0152] In the sample chamber 305, an insulating film such as a silicon oxide film, a silicon nitride film, or a silicon oxynitride film may be laminated on the inner surface of the main substrate 301, and these insulating films can be formed by a CVD method, a PVD method, or an oxidation method or a nitridation method. As explained above, the central hole 310-2 is formed by forming the through grooves (half of the grooves) of the sample chamber and the like and the partition walls such as the partition wall 301-2 while the main substrate 301 is separated into upper and lower parts, and then partially removing the central parts of the partition wall 301-2 and the like (these may be reversed. In other words, the substrate side walls are formed after the central hole is opened), and then attaching the separated upper and lower main substrates 301. The insulating film is formed before attaching the main substrate 301, or after attaching the main substrate 301.

[0153] The ionization chamber 306 formed adjacent to the sample chamber 305 is a space that ionizes neutral particles entering from the sample chamber 305 and focuses the ionized ions and the ions entering from the sample chamber 305 near the center. Next to the ionization chamber 306 is a charged particle acceleration chamber 307 that extracts ions present in the ionization chamber 306 and further accelerates them, and the ionization chamber 306 and the charged particle acceleration chamber 307 are separated by a partition wall 301-3 having a central hole 310-3. In other words, the ionization chamber 306 is a space sandwiched between the partition walls 301-2 and 301-3. (The side surfaces are the side walls of the main substrate 301.)

[0154] In the ionization chamber 306, the ionization beam 320 is irradiated through the upper substrate 302 or the lower substrate 303 to ionize the neutral particles 317 present in the ionization chamber 306. The ionization beam 320 can be any of various beams introduced in the literature, such as laser light, electron beam, synchrotron radiation, X-rays, etc. In addition to the laser light, the laser light may be directed at a solid target and the X-rays generated at that time may be further used to ionize the neutral particles. (Patent 3079585) In order to facilitate the passage of the ionization beam 320 into the ionization chamber, a portion of the upper substrate 302 or the lower substrate 303 that serves as the path of the ionization beam 320 may be removed (an opening is provided).

[0155] Moreover, the inner surface of the ionization chamber 306 is laminated with a conductive film 321, a contact hole 323 is formed in the upper substrate 302 or the lower substrate 303, a conductive film is laminated in the contact hole 323, and a conductive film electrode / wiring 324 is formed on the upper substrate 302 or the lower substrate 303, so that a voltage can be applied to the conductive film 321 from the electrode / wiring 324. If the conductive film 321 covers the inner surface of the ionization chamber except for the part where the ionized beam 320 passes, the inner surface of the ionization chamber can be made to have the same potential. If the ions are positive ions, a positive voltage is applied to the conductive film 321 to focus the positive ions in the center. If the ions are negative ions, a negative voltage is applied to the conductive film 321 to focus the negative ions in the center. If the upper, lower, left, and right conductive films are divided and contact holes and electrodes / wirings are formed in each conductive film, the voltage of each conductive film region can be controlled individually, so that the position of the charged particle beam 325 in the ionization chamber 306 can be adjusted. When the main substrate 301 is a semiconductor substrate such as Si or a conductive substrate such as Cu or Al, an insulating film is formed and then the conductive film 321 is laminated. Also, an insulating film may be laminated on the conductive film 321 as a protective film for the conductive film 321. The formation and patterning of the ionization chamber 306, the partition wall 301, the central hole 310, the insulating film, the conductive film 321, the protective film, etc. can be realized by a method of forming the main substrate 301 by dividing it and attaching the divided main substrates, as described in this specification. Incidentally, if the ions 318 generated in the sample chamber 305 enter the ionization chamber 306, they will naturally be converged by the voltage applied to the inner surface of the ionization chamber 306 and become part of the ionized beam 325.

[0156] The charged particle beam 325 converged in the ionization chamber 306 enters the charged particle acceleration chamber 307 through the central hole 310-3. A partition wall 301-11 having a central hole 327-1 is disposed closest to the entrance side of the acceleration chamber 307, and a conductive film 326 is laminated and patterned around the partition wall 301-11. This conductive film 326 is connected to the conductive film and conductive film electrode / wiring 324 laminated in the contact hole 323, and a voltage having a charge opposite to the charge of the ions of the charged particle beam 325 is applied to the conductive film 326, so that the charged particle beam 325 is extracted from the ionization chamber 306 and accelerated. Therefore, this partition wall 301-11 may be called an extraction electrode. If the conductive film is divided into the top, bottom, left, and right parts and contact holes and electrodes / wiring are formed in each conductive film, the voltage of each conductive film region can be individually controlled, and the position of the charged particle beam 325 at the central hole 327-1 can be adjusted.

[0157] A partition 301-12 (also having a central hole 327-2) is disposed adjacent to the partition 301-11 in the traveling direction of the charged particle beam 325, and a conductive film 326 is laminated and patterned around the partition 301-12. This conductive film 326 is connected to the conductive film laminated in the contact hole 323 and the conductive film electrode / wiring 324, and a voltage having the same charge as or the opposite charge to the charge of the ions of the charged particle beam 325 is applied. When a voltage having the same charge as the charge of the ions of the charged particle beam 325 is applied, the charged particle beam 325 is focused, and when a voltage having the opposite charge to the charge of the ions of the charged particle beam 325 is applied, the charged particle beam 325 is accelerated. In the traveling direction of the charged particle beam 325, a necessary number of partitions (also having a central hole) are formed after the partition 301-12, in which conductive films similar to those of the partition 301-12 are laminated, and a voltage having the same charge or the opposite charge to the charge of the ions of the charged particle beam 325 is applied to these conductive films, and the necessary number of charged particle beams 325 are accelerated and focused, and the charged particle beam 325 is guided to the adjacent mass analysis chamber 308 separated by the partition 301-4 having the central hole 310-4. The conductive film of each partition after the partition 301-12 is divided into upper, lower, left and right parts, and contact holes are formed in each part, and conductive films, electrodes, and wirings are formed therein, so that different voltages can be applied to the divided conductive films separately, and the traveling direction and focusing position of the charged particle beam 325 can be controlled. As a result, it becomes possible to freely control the beam radius, position and traveling direction of the charged particle beam incident on the mass analysis chamber.

[0158] The size of the central holes 310-2, 3, 4, 5 and the central holes 301-11, 12, . . . of the partition walls 327-1, 2, . . . in the acceleration chamber 307 can be freely changed. For example, 310-2 is made larger in order to guide most of the sputtered neutral particles 317 and ions 318 to the ionization chamber. The central hole 327-11 in the acceleration chamber 307 is made smaller than the central hole 310-3 at the boundary with the ionization chamber 306 in order to make it easier to extract ions. The central holes 327-2, . . . in the acceleration chamber 307 are made smaller than the central holes 310-3 and 327-11 in order to accelerate the ions. The method of changing the size of the central holes in this way is to divide the main substrate into two parts, upper and lower, form partition walls, and then perform patterning (for example, a photoresist pattern) according to the size of the central holes to be formed in each partition wall, and then etch and remove the partition walls according to the size of each central hole. Alternatively, the main substrate is divided into two, an upper one and an lower one, and patterning is performed (e.g., a photoresist pattern) according to the size of the central hole to be formed at the position where each partition wall is to be formed, and the main substrate is etched away according to the size of each central hole, and then each partition wall is formed. After that, insulating films, conductive films, and protective films are patterned. The acceleration chamber 307 can be the acceleration chamber used in the accelerator described with reference to Figures 1 to 17, etc.

[0159] The mass analysis chamber 308 is, for example, a quadrupole type. The mass analysis chamber 308 is adjacent to the acceleration chamber 307 and is separated by a partition wall 301-4 having a central hole 310-4. When the charged particle beam 325 accelerated and focused in the acceleration chamber 307 enters the mass analysis chamber 308, the electric and magnetic fields of the mass analysis chamber 308 cause the trajectories to be sorted according to the ratio m / q (mass-to-charge ratio) of the charge q and mass m of the charged particle, and only specific charged particles enter the ion detection chamber 309. The ion detection chamber 309 is separated from the acceleration chamber 307 by a partition wall 301-5 having a central hole 310-5.

[0160] The mass spectrometry chamber 308 is, for example, a quadrupole type. FIG. 19 shows a quadrupole mass spectrometry chamber. Here, the mass spectrometry chamber 308 does not have any partitions other than partitions 301-4 and 301-5 which are its separating walls, and the main substrate 301 has a through groove (or through chamber) penetrating from the upper substrate 302 to the lower substrate 303. (The side surface is the main substrate 301.) The mass spectrometry chamber has four long quadrupole electrodes 329 (329-1 and 2 are shown in FIG. 19) arranged in the traveling direction of the charged particle beam 325. One or more conductive films / electrodes / wirings 324 are connected to each quadrupole electrode 329 through conductive films in contact holes 323, and a voltage can be applied. In addition, a vacuum opening 330 is opened in the upper and lower substrates 302 and 303, so that the inside of the mass spectrometry chamber 308 can be evacuated to a predetermined pressure (for example, 10 -9 ~10 -2 The pressure can be set to 100 torr. Similarly, other openings can be formed to allow the flow of purge or cleaning gas. In addition, openings can be provided for the introduction or exit of selective CVD gas (e.g., WF6) or plating solution (e.g., copper sulfate solution for Cu plating) for connection of the conductive film in the mass spectrometry chamber 308.

[0161] FIG. 20 is a diagram showing an example of a method for fabricating a quadrupole mass spectrometry chamber. A conductor film 355 that will become a quadrupole electrode is laminated on a third substrate 353, and patterned to form the quadrupole electrode 355. The conductor film 355 is, for example, a metal such as molybdenum (Mo), tungsten (W), chromium (Cr), titanium (Ti), copper (Cu), iron (Fe), nickel (Ni), or aluminum (Al), or an alloy of these, or a silicide that is a compound of these and Si, and is laminated by a PVD method or a CVD method, and then patterned by a photolithography + etching method. Alternatively, a quadrupole electrode rod of this size is attached by an adhesion method. When the third substrate 353 is an insulator such as glass, quartz, ceramic, or plastic, it can be directly laminated or attached, but when the third substrate 353 is a conductor or semiconductor, an insulating film is laminated and then the conductor film 355 is laminated. Alternatively, the conductor film 355 can be formed by a coating method. The desired quadrupole electrode 355 can be formed by applying a conductive paste onto third substrate 353 using a metal mask and then heat treating it. The conductive paste contains the above metals. Alternatively, conductive film 355 can be formed by attaching a foil of the above metals onto third substrate 353 and patterning it. Main substrate 351 has recess 354 cut out to accommodate portion 354 where quadrupole electrode 355 will be located. When main substrate 351 is a semiconductor substrate such as a Si substrate, an insulating substrate such as a glass substrate or a quartz substrate, or a metal substrate, it can be formed by a simple process (FIG. 20(a)).

[0162] Next, as shown in FIG. 20(b), the main substrate 351 and the third substrate 353 are attached. These attachments can be performed by the method described in this specification. At this time, the depth of the recess 354 is made larger than the height of the quadrupole electrode 355 so that the main substrate 351 and the quadrupole electrode 355 do not come into contact with each other. Next, the upper surface of the main substrate 351 is patterned with photoresist or the like to form a through groove that will become the mass spectrometry chamber 356. At this time, precise alignment is performed because patterns are aligned with each other. When etching the main substrate 351 to form the through groove 356, etching is performed with a dry etching gas or a wet etching solution that has a high etching selectivity with respect to the conductive film 355 and the third substrate 353, so that the conductive film 355 and the third substrate 353 are not etched as much as possible. (FIG. 20(c)) At the stage of FIG. 20(a), a protective film that is an insulating film (for example, a SiO2 film, a SiN film, etc.) can also be formed on the conductive film 355. In this case, the etching selection ratio is between the main substrate 351 and the protective film.

[0163] A similar process is performed on the second substrate side 352, and the main substrate 351 (351-1) is attached to the second substrate side 352, and a through groove 356 and a conductive film 355 serving as a quadrupole electrode 355 are formed inside the through groove 356. The main substrate 351 (351-1) attached to the second substrate side 352 and the main substrate 351 (351-2) attached to the third substrate side 353 thus formed are aligned so that the through grooves 356 match, and then superimposed and attached. Attachment methods include adhesives, diffusion bonding, room temperature bonding, and high temperature bonding. In addition, when the main substrate 351 is a semiconductor substrate such as Si or a conductive substrate such as a metal, a glass substrate or a quartz substrate 357 can be used for strong attachment by electrostatic bonding (anodic bonding). In this case, the portion of the substrate 357 sandwiched between them that will become the mass spectrometry chamber 356 is removed, and alignment is performed to attach the second substrate side 352 and / or the third substrate side 353 to the substrate 357. (Either one or the other may be used.) As a result, a sealed mass spectrometry chamber 358 (356 is combined to become 358) can be formed. (FIGS. 20(d) and (e)) In addition, in the process shown in FIG. 20(a), a main substrate 351 having a through groove formed therein instead of a recess can also be attached. In this case, accurate alignment is performed between the through groove and the conductive film pattern. If the depth of the through groove is sufficient for only one groove, the main substrate without one side (for example, the second substrate 352 without 351 (351-1) and with the conductive film 355 formed thereon) can also be attached to the main substrate 351 (351-2) in FIG. 20(d).

[0164] Next, contact holes 371 are formed in the second substrate 352 and the third substrate 353, a conductive film is laminated in the contact holes 371, and then electrodes and wiring 372 are formed. The conductive film can be laminated in the contact holes 371 by CVD, PVD, plating, coating, etc. The electrodes and wiring 372 can also be formed by CVD, PVD, plating, coating, etc. The conductive film in the contact holes 371 and the electrodes and wiring 372 can be shared. The electrodes and wiring 372 can also be routed on the second substrate 352 and the third substrate 353, and pad electrodes (electrode connection parts with the outside) can be provided at appropriate locations. If necessary, a protective film can also be formed. Note that FIG. 20 is a view seen from the traveling direction of the ion beam 325 in FIG. 19, that is, a cross-sectional view perpendicular to the paper surface in FIG. 19.

[0165] As a result, AC (high frequency voltage) and DC voltages can be applied to the four quadrupole electrodes 355 (355-1, 2, 3, 4) from the external electrode 372. Since the mass spectrometry chamber can be formed using the semiconductor process as described above, a mass spectrometry chamber of extremely accurate size can be fabricated, enabling highly accurate mass analysis. As is clear from this process, the depth of the mass spectrometry chamber can be increased by stacking and adhering main substrates (a glass substrate or the like may be interposed between them). For example, the thickness of a normal Si substrate is at most about 1 mm, but by stacking 10 substrates, the thickness becomes 10 mm. Of course, thicker Si substrates can also be fabricated, so a predetermined thickness can be achieved by bonding a small number of substrates together. Also, by forming a vacuum line opening 359 and connecting a vacuum pump, the mass spectrometry chamber 358 can be evacuated and the pressure can be reduced. The present invention provides a mass spectrometry chamber of a desired size (even if the height of the mass spectrometry chamber is extremely small, such as 1 mm or less, or 100 μm or less), with few joints and strong joints, so that extremely low pressures or desired pressures can be easily achieved. The process is simple, and a small vacuum pump is sufficient, so a low-cost mass spectrometry device can be realized.

[0166] In the case of quadrupole mass spectrometry, only ions having a certain m / q pass through the quadrupole electrode 355 (329 in FIG. 19) and reach the detection chamber (309 in FIG. 19), but ions having other m / q may collide with and damage the quadrupole electrode 355 and the main substrate 351, second substrate 352, and third substrate 353 outside it. Therefore, if the mass analysis chamber 358 is made larger, the kinetic energy of the ions will also be smaller, and damage can be reduced. Figure 20(f) shows the structure and method for making the mass analysis chamber larger. That is, a second main substrate 361 (361-1, 2), a fourth substrate 362, and a fifth substrate 363 are attached above and below the second substrate 352 and the third substrate 353, and an upper mass analysis chamber 365 and a lower mass analysis chamber 368 are provided at the top and bottom of the mass analysis chamber 358, and further the left and right width (w21) of the mass analysis chamber 358 is increased and the left and right walls of the main substrate 351 are separated from the quadrupole electrode 355 (d21 is increased). The planar areas of the mass analysis upper chamber 365 and the lower chamber 368 are made larger than the area of ​​the mass analysis chamber 358 (i.e., when the left-right width of the mass analysis upper chamber 365 is w22 and the left-right width of the mass analysis lower chamber 368 is w23, w22, w23>w21), and the areas of the second substrate 352 and the third substrate 353 are made to a degree that the quadrupole electrode 355 can be supported in terms of strength, and the partitions (the second substrate 352 and the third substrate 353) between the mass analysis chamber 367 and the mass analysis upper chamber 365 and the lower chamber 368 are removed to make the openings 364 and 367 as wide as possible (they may be divided into a plurality of openings). Also, the vacuum drawing line openings 366 and 369 are provided on both the fourth substrate 362 and the fifth substrate 363. Furthermore, the vacuum drawing line openings 366 and 369 are made large enough to cause no problems (they may be divided into a plurality of openings). The heights (h22, h23) of the mass analysis upper chamber 365 and the lower chamber 368 are also increased.

[0167] For example, the dimensions of mass analysis chamber 358 are w21 = 6 mm, h21 = 2 mm, d21 = 1.8 mm, thickness of main substrate 351 (351-1, 2) each 0.8 mm, thickness of glass substrate 357 0.4 mm, thickness of second substrate 352 0.3 mm, thickness of third substrate 353 0.3 mm, thickness of fourth substrate 362 0.5 mm, thickness of fifth substrate 363 0.5 mm, width of quadrupole electrode 355 0.2 mm, height 50 μm, length of quadrupole electrode (horizontal length in FIG. 19 or length perpendicular to the paper surface of FIG. 20) 1 mm to 100 mm, w22 = 8 mm, h22 = 2 mm, w23 = 8 mm, h23 = 2 mm. Alternatively, in an example where the mass analysis chamber is enlarged, the dimensions of mass analysis chamber 358 are w21 = 30 mm, h21 = 10 mm, d21 = 9 mm, the thickness of main substrate 351 (351-1, 2) is 5 mm each, the thickness of glass substrate 0.5 mm, the thickness of second substrate 352 is 1 mm, the thickness of third substrate 353 is 1 mm, the thickness of fourth substrate 362 is 1 mm, the thickness of fifth substrate 363 is 1 mm, the width of quadrupole electrode 355 is 1 mm, the height is 0.4 mm, the length of the quadrupole electrode is 20 mm to 200 mm, w22 = 40 mm, h22 = 10 mm, w23 = 40 mm, h23 = 10 mm.

[0168] As a result of the above, even if ions that pass through the gap between the quadrupole electrodes 355 without reaching the ion detection chamber 309 move toward the wall (side) of the main substrate 351, the ion movement speed is small, and damage to the wall (side) of the main substrate 351 is small. In particular, by providing a large number or a wide area of ​​vacuum openings 364 and 367 around the wall (side) of the main substrate 351, ions that have escaped from the inside of the quadrupole electrodes will exit from those openings 364 and 367 to the upper mass analysis chamber 365 and the lower mass analysis chamber 368. Furthermore, damage can be reduced by covering the inner surface of the mass analysis chamber 358 with a film that is resistant to ion attack. For example, silicon oxide film, silicon nitride film, alumina, and the like have high ion resistance. These films can be layered by CVD or PVD. The movement speed of ions moving upward toward the upper mass analysis chamber 365 and downward toward the lower mass analysis chamber 368 also becomes slow, causing little damage to the walls (side surfaces) of the fourth substrate 362, the fifth substrate 363, and the second main substrate 361. Also, since ions are exhausted to the vacuum pump side from the vacuum suction openings 366 and 369, the impact on the mass analysis device is small. Furthermore, providing openings for purging or cleaning in the fourth substrate 362 and the fifth substrate 363 and purging or cleaning from time to time with, for example, nitrogen, Ar, He, or the like is also effective in keeping the mass analysis chamber clean and extending its life.

[0169] Alternatively, a conductive film is formed on the inner surface of the ion detection chamber 309, and a voltage can be applied from the outside. If a weak voltage of the same charge as the ions is applied, the collision of the ions can be reduced. The quadrupole electrode 355 is connected to a conductive film 372 formed on the second substrate 352 and the third substrate 353 through a conductive film laminated in a contact hole 371 formed in the second substrate 352 and the third substrate 353, and then to a conductive film 373 formed on the inner surface of the second main substrate 352 or the third substrate 353, and further to a conductive film 374 formed on the upper and lower surfaces of the fourth substrate 362 or the fifth substrate 363. The conductive film 374 is connected to a conductive film electrode / wiring 376 formed on the upper surface of the fourth substrate 362 or the fifth substrate 363 through a conductive film laminated in a contact hole 375 formed in the fourth substrate 362 or the fifth substrate 363. As a result, a DC voltage and an AC (high frequency) voltage can be applied to the four quadrupole electrodes 355 from the external electrodes and wiring 376. Moreover, if a single quadrupole electrode is provided with a plurality of external electrodes and wiring as shown in Fig. 19, a DC voltage and an AC (high frequency) can also be applied from these multiple electrodes, and the trajectory of the ions 325 can be precisely controlled.

[0170] An example of a method for producing the state of FIG. 20(f) from the state of FIG. 20(e) will be described. A through hole 368 penetrating the fifth substrate 363 is formed in the second main substrate 361 (361-2) attached to the fifth substrate 363. In addition, in order to widen the overlapping area between the conductive film 373 formed on the second main substrate 361 (361-2) side and the conductive film 372 formed on the lower surface of the third substrate (lower substrate) 353, a recess 377 is also formed. The depth of this recess 377 is set to approximately the sum of the thickness of the conductive film 372 and the thickness of the conductive film 373 (when an insulating film is formed on the base, the thickness of the insulating film is taken into consideration. Also, when a conductive adhesive containing a low melting point solder alloy is used, the thickness of the conductive film is taken into consideration.) so that the connection between the conductive film 372 and the conductive film 373 is sufficiently performed. After the through hole 368 and the recess 377 are formed, the conductive films 373 and 374 are laminated, and the conductive films 373 and 374 are formed on the necessary parts of the side surfaces of the recess 377 and the through hole 368 and on the necessary parts of the upper surface of the fifth substrate 363. The conductive films 373 and 374 are Cu, Al, conductive Si, Cr, Ni, W, Mo, Ti, Au, Ag, alloys thereof, conductive polycrystalline silicon, various silicides, conductive graphene, and conductive nanotubes. If the electrical connection between the conductive films 373 and 372 is in...

Claims

1. A mass spectrometer including a first main substrate, a first upper substrate attached to an upper surface of the first main substrate, and a first lower substrate attached to a lower surface of the first main substrate, wherein the mass spectrometer chamber is A mass analysis device characterized in that a through chamber is formed in a first main substrate, penetrating from the upper surface of the first main substrate to the lower surface of the first main substrate, the direction perpendicular to the substrate surface (Z direction) is surrounded by an upper substrate and a lower substrate, both sides in a direction perpendicular to the Z direction and in the direction of travel of the charged particles (X direction) are surrounded by first main substrate side plates, and both side surfaces in a direction perpendicular to the Z direction and the X direction (Y direction) are surrounded by the first main substrate, the first main substrate side plate into which the charged particles are incident has a central hole, and the charged particles are incident into the mass analysis chamber through the central hole formed in the first main substrate side plate.

2. 2. The mass spectrometer according to claim 1, wherein the first main substrate is an insulating substrate, a semiconductor substrate, a conductive substrate, or a laminated substrate thereof.

3. 3. The mass spectrometer according to claim 1, wherein the upper and lower substrates are made of a material selected from the group consisting of a glass substrate, a quartz substrate, a plastic substrate, an alumina substrate, an AlN substrate, a ceramic substrate, a polymer substrate, and a laminate substrate made of any of these.

4. When the main substrate is an insulating substrate, it is a glass substrate, a quartz substrate, a plastic substrate, an alumina substrate, an AlN substrate, a ceramic substrate, a polymer substrate, or a laminated substrate thereof; When the main substrate is a semiconductor substrate, it is a Si substrate, a SiC substrate, a C substrate, a GaAS substrate, an InP substrate, a GaN substrate, a CdS substrate, a binary compound semiconductor, a ternary compound semiconductor, or a laminate substrate thereof; The mass spectrometer according to any one of claims 1 to 3, characterized in that the main substrate is a semiconductor substrate, or a conductive substrate made of Cu, Al, Ti, Zn, Fe, an alloy containing these metals, or a laminate substrate made of these metals.

5. The mass spectrometry chamber is a quadrupole mass spectrometry chamber, and in the mass spectrometry chamber, Two quadrupole electrodes are attached or formed on the lower surface of the upper substrate, and two quadrupole electrodes are attached or formed on the upper surface of the lower substrate, Contact wiring (upper substrate contact wiring) formed on the upper substrate connected to two quadrupole electrodes arranged on the lower surface of the upper substrate, and electrodes / wiring (upper substrate upper surface electrodes / wiring) formed on the upper surface of the upper substrate connected to the upper substrate contact wiring, contact wiring (lower substrate contact wiring) formed on the lower substrate which is connected to the two quadrupole electrodes arranged on the upper surface of the lower substrate, and electrodes / wiring (lower substrate lower surface electrodes / wiring) formed on the lower substrate which is connected to the lower substrate contact wiring, A mass spectrometer, characterized in that a high frequency voltage and / or a direct current voltage is applied from said upper electrode / wiring and said lower electrode / wiring.

6. 6. The mass spectrometer according to claim 5, wherein, of the two quadrupole electrodes arranged on the lower surface of the upper substrate and the two quadrupole electrodes arranged on the upper surface of the lower substrate, the distance between any two quadrupole electrodes that are not adjacent to each other is substantially the same, and the midpoints between them substantially coincide.

7. 6. The mass spectrometer according to claim 4, wherein the distance between two adjacent quadrupole electrodes of the two quadrupole electrodes arranged on the lower surface of the upper substrate and the two quadrupole electrodes arranged on the upper surface of the lower substrate is approximately the same.

8. A second main substrate is attached on or above an upper substrate (first upper substrate), and a second upper substrate (second upper substrate) is further attached on the second main substrate, a through chamber (second through chamber) penetrating from the second upper substrate to the first upper substrate is formed in the second main substrate above the through chamber (first through chamber), an opening is provided in a part of the first upper substrate between the first through chamber and the second through chamber, and the opening is formed between two quadrupole electrodes arranged on the underside of the first upper substrate, The electrodes and wiring formed on the first upper substrate, which are connected to the quadrupole electrode arranged on the lower surface of the first upper substrate, are connected to wiring (second wiring) formed on the side surface of the second through-chamber, the second wiring is connected to the electrodes and wiring formed on the lower surface of the second upper substrate, the electrodes and wiring formed on the lower surface of the second upper substrate are connected to contact wiring (second upper substrate contact wiring) formed on the second upper substrate, and the second upper substrate contact wiring is connected to the electrodes and wiring formed on the second upper substrate (second upper electrode and wiring), a third main substrate is attached to or below the underside of the lower substrate (first lower substrate), a second lower substrate (second lower substrate) is further attached to the underside of the third main substrate, a through chamber (third through chamber) penetrating from the second lower substrate to the first lower substrate is formed in the third main substrate below the through chamber (first through chamber), an opening is provided in a part of the first lower substrate between the first through chamber and the third through chamber, and the opening is formed between two quadrupole electrodes arranged on the upper surface of the first lower substrate; The electrode / wiring formed on the underside of the first lower substrate, which is connected to the quadrupole electrode arranged on the upper surface of the first lower substrate, is connected to wiring (third wiring) formed on the side of the third through-chamber, the third wiring is connected to the electrode / wiring formed on the upper surface of the second lower substrate, the electrode / wiring formed on the upper surface of the second lower substrate is connected to a contact wiring (second lower substrate contact wiring) formed on the second lower substrate, and the second lower substrate contact wiring is connected to an electrode / wiring (second lower electrode / wiring) formed on the underside of the second upper substrate, A mass spectrometer, characterized in that a high frequency voltage and / or a direct current voltage is applied from said second upper electrode / wiring and said second lower electrode / wiring.

9. 9. The mass spectrometer according to claim 8, wherein the second upper substrate and the second lower substrate are a glass substrate, a quartz substrate, a plastic substrate, an alumina substrate, an AlN substrate, a ceramic substrate, a polymer substrate, or a laminate substrate thereof.

10. When the second main substrate and the third main substrate are insulating substrates, they are glass substrates, quartz substrates, plastic substrates, alumina substrates, AlN substrates, ceramic substrates, polymer substrates, or laminated substrates thereof; When the second main substrate and the third main substrate are semiconductor substrates, they are Si substrates, SiC substrates, C substrates, GaAS substrates, InP substrates, GaN substrates, CdS substrates, binary compound semiconductors, ternary compound semiconductors, or laminated substrates thereof; 10. The mass spectrometer according to claim 8 or 9, wherein when the second main substrate and the third main substrate are semiconductor substrates, they are conductive substrates made of Cu, Al, Ti, Zn, Fe, alloys containing these metals, or laminated substrates of these.

11. The mass spectrometry chamber is a quadrupole mass spectrometry chamber, and one quadrupole electrode is arranged on an upper surface of an upper substrate attached to an upper portion of the mass spectrometry chamber, one quadrupole electrode is arranged on a lower surface of a lower substrate attached to a lower portion of the mass spectrometry chamber, and one quadrupole electrode is arranged in each of left and right through-chambers formed in a main substrate provided adjacent to the mass spectrometry chamber.

12. 12. The mass spectrometer according to claim 11, wherein the left and right through-chambers formed in the main substrate adjacent to the mass spectrometer chamber have side walls between them and the mass spectrometer chamber.

13. 13. The mass spectrometer according to claim 8, wherein the quadrupole electrodes are rods attached to predetermined locations of the upper substrate, the lower substrate and the main substrate.

14. The mass spectrometer according to any one of claims 8 to 13, wherein the quadrupole electrodes are conductive film electrodes laminated on an upper substrate or a lower substrate by a CVD method, a PVD method, a plating method, an electroforming method, a screen printing method, a squeegee method, a spin coating method, a dispensing method, or a combination of these methods and processed into a predetermined shape.

15. The mass analysis chamber is a quadrupole mass analysis chamber, and two quadrupole electrodes are arranged on the lower surface of an upper substrate attached to the top of the mass analysis chamber, the surface facing the mass analysis chamber, and two quadrupole electrodes are arranged on the upper surface of a lower substrate attached or formed at the bottom of the mass analysis chamber, the surface facing the mass analysis chamber.

16. a through-chamber (second through-chamber) is formed above an upper substrate (first upper substrate) on which two quadrupole electrodes are attached or formed, a second upper substrate is attached to an upper portion of the second through-chamber, and a portion of the first upper substrate between the mass spectrometry chamber (first through-chamber) and the second through-chamber is removed, and the pressures of the first through-chamber and the second through-chamber are substantially the same; The mass spectrometer described in claim 15, characterized in that a further through-chamber (third through-chamber) is formed below a lower substrate (first lower substrate) on which two quadrupole electrodes are attached or formed, a second lower substrate is attached to the bottom of the third through-chamber, a portion of the first lower substrate between the mass analysis chamber (first through-chamber) and the third through-chamber is removed, and the pressures in the first through-chamber and the third through-chamber are approximately the same.

17. 17. The mass spectrometry apparatus of claim 16, wherein the mass spectrometry chamber includes one quadrupole electrode (first quadrupole electrode) attached to or formed on the underside of the upper substrate, one quadrupole electrode (second quadrupole electrode) attached to or formed on the upper side of the lower substrate, a portion of the substrate on one side of the mass spectrometry chamber extends in the Y direction within the mass spectrometry chamber, one quadrupole electrode (third quadrupole electrode) attached to or formed on the upper or lower surface of the substrate on the extended side, and one quadrupole electrode (fourth quadrupole electrode) attached to or formed on the upper or lower surface of the substrate on the other side of the mass spectrometry chamber extends in the Y direction within the mass spectrometry chamber.

18. the upper substrate has contact wiring (first upper substrate contact wiring) connected to the first quadrupole electrode and an electrode / wiring (first upper substrate electrode / wiring) connected to the first contact wiring on the upper surface of the upper substrate; the lower substrate has contact wiring (first lower substrate contact wiring) connected to the second quadrupole electrode and an electrode / wiring (first lower substrate electrode / wiring) connected to the second contact wiring on its lower surface; A mass spectrometer described in any one of claims 15 to 17, characterized in that the side substrate on which the third quadrupole electrode is attached or formed has wiring connecting to the third quadrupole electrode, the wiring being connected to wiring formed on the side of the main substrate, the wiring formed on the side being further connected to wiring formed on the upper substrate or lower substrate, the wiring being further connected to contact wiring formed on the upper substrate or lower substrate (second upper substrate contact wiring or second lower substrate contact wiring), and the second upper substrate contact wiring or second lower substrate contact wiring being further connected to an electrode / wiring (second upper substrate electrode / wiring or second lower substrate electrode / wiring) formed on the upper surface of the upper substrate or the lower surface of the lower substrate.

19. A through-chamber (second through-chamber) is formed above the upper substrate (first upper substrate), a second upper substrate is attached to an upper portion of the second through-chamber, and a portion of the first upper substrate between the mass spectrometry chamber (first through-chamber) and the second through-chamber is removed, so that the pressures of the first through-chamber and the second through-chamber are substantially the same; A mass spectrometer described in any one of claims 15 to 18, characterized in that a further through-chamber (third through-chamber) is formed below the lower substrate (first lower substrate), a second lower substrate is attached to the bottom of the third through-chamber, a portion of the first lower substrate between the mass analysis chamber (first through-chamber) and the third through-chamber is removed, and the pressures of the first through-chamber and the third through-chamber are approximately the same.

20. The mass spectrometry chamber is a quadrupole mass spectrometry chamber, and in the mass spectrometry chamber, a quadrupole electrode (first quadrupole electrode) attached to or formed on a lower surface of the upper substrate, and a quadrupole electrode (third quadrupole electrode) attached to or formed on an upper surface of the lower substrate; A contact wiring (upper substrate contact wiring) formed on the upper substrate, which is connected to a quadrupole electrode (first quadrupole electrode) arranged on the lower surface of the upper substrate, and an electrode / wiring (upper substrate upper surface electrode / wiring) formed on the upper surface of the upper substrate, which is connected to the upper substrate contact wiring, and a contact wiring (lower substrate contact wiring) formed on the lower substrate, which is connected to a quadrupole electrode (third quadrupole electrode) disposed on the upper surface of the lower substrate, and an electrode / wiring (lower substrate lower surface electrode / wiring) formed on the lower surface of the lower substrate, which is connected to the lower substrate contact wiring; The main substrate has quadrupole electrodes (a second quadrupole electrode and a fourth quadrupole electrode) formed on two side surfaces in the Y direction, the second quadrupole electrode and the fourth quadrupole electrode have contact wiring formed on the upper substrate and / or the lower substrate, and electrodes / wiring formed on the upper surface of the upper substrate and / or the lower surface of the lower substrate (upper substrate upper surface electrodes / wiring and / or lower substrate lower surface electrodes / wiring); 20. The mass spectrometer according to claim 15, wherein a radio frequency voltage and / or a direct current voltage is applied from the upper surface electrodes and wiring of the upper substrate and the lower surface electrodes and wiring of the lower substrate.

21. The mass spectrometer according to any one of claims 15 to 20, wherein the second quadrupole electrode and the fourth quadrupole electrode are conductive films laminated in a through-chamber formed in a main substrate, and a part of the conductive film is a plated film.

22. The mass spectrometry chamber is of a magnetic field application type, and uses one or more coils arranged on the upper side of an upper substrate attached to the upper part of the main substrate forming the mass spectrometry chamber and / or one or more coils arranged on the lower side of a lower substrate attached to the lower part of the main substrate forming the mass spectrometry chamber to generate a magnetic field perpendicular to the substrate surface of the main substrate, thereby changing the trajectory of the charged particles.

23. The mass spectrometry chamber is of a magnetic field application type, and uses a magnetic field generated perpendicular to the substrate surface of the main substrate by electromagnets arranged above an upper substrate attached to the upper portion of the main substrate forming the mass spectrometry chamber and / or below a lower substrate attached to the lower portion of the main substrate, thereby changing the trajectory of the charged particles.

24. 24. The mass spectrometer according to claim 22 or 23, wherein one or more coils arranged on the upper side of the upper substrate and / or on the lower side of the lower substrate are formed by lamination on the second main substrate.

25. The mass spectrometer according to any one of claims 22 to 24, characterized in that the charged particles are emitted from the charged particle extraction chamber or the charged particle acceleration chamber to the mass analysis chamber, a substrate side wall plate (front substrate side wall plate) having a central hole is arranged between the charged particle extraction chamber or the charged particle acceleration chamber and the mass analysis chamber, and the charged particles are emitted to the mass analysis chamber through the central hole of the front substrate side wall plate.

26. The mass spectrometer according to any one of claims 22 to 25, characterized in that the charged particles leaving the mass analysis chamber are detected in an ion detection chamber, the ion detection chamber being a through-chamber formed in a main substrate, a substrate side wall plate (rear substrate side wall plate) having a central hole is disposed between the mass analysis chamber and the ion detection chamber, and the charged particles are emitted to the ion detection chamber side through the central hole of the rear substrate side wall plate.

27. The mass spectrometer according to any one of claims 22 to 26, characterized in that the charged particles are bent in a 360 degree direction by a magnetic field, and a plurality of ion detection chambers are arranged in a 360 degree area.

28. The mass analysis chamber is a double focusing type further adding an electric field application type, the region through which the charged particles pass in the electric field application type is a through chamber (electric field application type through chamber) formed in a main substrate and including a sector-shaped through chamber (sector-shaped region through chamber) surrounded by the upper substrate at the top (Z direction), the lower substrate at the bottom (Z direction), and the main substrate at the side (Y direction), the electric field application type through chamber is surrounded in the X direction by a substrate side wall plate having a central hole, the charged particles enter through the central hole of one of the substrate side wall plates, the trajectory of the charged particles is bent in the electric field application type through chamber, and the charged particles exit through the central hole of the other substrate side wall plate, the electric field application type through chamber is characterized in that electrodes are formed on both sides of the main substrate facing each other, the central trajectory of which is a radius R0, a central angle α, and a certain distance d0 from the central trajectory, and the charged particles are bent by the electric field generated by the voltage applied to the electrodes formed on both sides.

29. The side electrode in the electric field application type penetration chamber is characterized in that a plating film is further laminated on a conductive film laminated by a CVD method or a PVD method, The mass spectrometer described in claim 28, characterized in that the contact wiring connected to the side electrode is formed on an upper substrate attached to the upper surface of the electric field application type penetration chamber and connected to electrodes and wiring formed on the upper surface of the upper substrate, and / or is formed on a lower substrate attached to the lower surface of the electric field application type penetration chamber and connected to electrodes and wiring formed on the lower surface of the lower substrate.

30. the penetration chamber (ICR chamber) into which the charged particles enter and undergo cyclotron motion is surrounded by a substrate sidewall plate (substrate sidewall plate for extraction electrode) having a central hole which is an entrance for the charged particles from the ion source, a substrate sidewall (substrate sidewall for trap electrode) which is in the direction of travel of the charged particles and faces the substrate sidewall plate for the extraction electrode and with which the charged particles undergoing cyclotron motion collide, an upper substrate attached to the top of the ICR chamber, a lower substrate attached to the bottom of the ICR chamber, and two substrate sidewalls (substrate sidewall for receiver electrode) which are approximately parallel to the direction of travel of the charged particles; a conductive film electrode which serves as the extraction electrode that draws the charged particles from the central hole into the ICR chamber is formed on the surface of the substrate sidewall for the extraction electrode, a conductive film electrode to which a voltage for trapping the charged particles is applied is formed on the surface of the substrate sidewall for the trap electrode, and conductive film electrodes to which a voltage for exciting the charged particles is applied are formed on the upper substrate and the lower substrate; 5. The mass spectrometer according to claim 1, wherein a magnetic field is applied in the ICR chamber in a direction parallel to the direction from the extraction electrode to the trap electrode, which is the direction of travel of the charged particles.

31. The mass spectrometer described in claim 30, characterized in that the coil wiring that generates the magnetic field is formed in close contact with the upper substrate and the lower substrate, and further formed in close contact with the outer side of the main substrate, or formed inside the main substrate, the upper substrate, and the lower substrate.

32. a support substrate is attached onto the upper substrate, a second upper substrate is attached onto the support substrate, a support substrate is attached onto the lower substrate, and a second lower substrate is attached onto the support substrate; coil wiring for generating the magnetic field is formed in close contact with the upper substrate and the lower substrate, and is further formed in close contact with an outer side surface of the main substrate; The mass spectrometer described in claim 30 or 31, further characterized in that electrode wirings connecting the extraction electrode, trap electrode, two opposing ion excitation electrodes, and two opposing receiver electrodes in the ICR chamber are formed on the upper substrate and / or the lower substrate, and are present in a space surrounded by the upper substrate, the support substrate, and the second upper substrate, and / or are present in a space surrounded by the lower substrate, the support substrate, and the second lower substrate, and further characterized in that these electrode wirings are connected to electrode wirings formed on the second upper substrate and / or the second lower substrate, and the electrodes connected to the coil are connected to electrode wirings formed on the second upper substrate and / or the second lower substrate.

33. a charged particle generation chamber for generating charged particles, which includes two through-chambers (charged particle generation chambers 1 and 2) formed in a main substrate, the upper part of which is attached to an upper substrate and the lower part of which is attached to a lower substrate; the charged particle generation chambers 1 and 2 are adjacent chambers separated by a substrate side wall plate (first substrate side wall plate) having a central hole; a sample plate inserted through an opening in the upper substrate is placed in the charged particle generation chamber 1; a laser beam is irradiated from the opening in the upper substrate to the sample attached to the sample plate, thereby decomposing the sample into particles; the decomposed particles (decomposed particles) enter the charged particle generation chamber 2 through the central hole in the substrate side wall plate; and one ionized beam selected from laser light, electron beam, synchrotron radiation, and X-ray is irradiated from outside the upper substrate or the lower substrate to the decomposed particles present in the charged particle generation chamber 2, thereby generating charged particles; Next to the charged particle generation chamber 2 is an extraction electrode / acceleration chamber separated by a substrate side wall plate (second substrate side wall plate) having a central hole, The extraction electrode / acceleration chamber is a through-chamber formed in a main substrate, the upper part of which is attached to the upper substrate and the lower part of which is attached to the lower substrate; On the inner surface of the charged particle generation chamber 2, conductive film electrodes are formed on the upper and lower substrates, and / or on the side surfaces of the first substrate side wall plate, and / or on the side surfaces of the second substrate side wall plate, and / or on the side surfaces of the other two substrate side walls; The conductive film electrode is connected to a contact wiring formed on the upper substrate and / or the lower substrate, and the contact wiring is further connected to a conductive film electrode / wiring formed on the outer surface of the upper substrate and / or the lower substrate, the charged particles having the same polarity as the voltage applied to the conductive film electrode are attracted to the extraction electrode / acceleration chamber by the extraction electrode disposed in the extraction electrode / acceleration chamber through a central hole in the side wall plate of the second substrate, 33. The mass spectrometer according to claim 1, wherein the charged particles that have entered the extraction electrode / acceleration chamber exit the extraction electrode / acceleration chamber and enter a mass analysis chamber.

34. The mass spectrometer described in claim 33, characterized in that in the charged particle generation chamber 1, the back surface of the sample plate is placed in close contact with the side surface of the substrate side wall, the substrate side wall is provided with a central hole, and the central hole is connected to a cavity in the thickness direction of the main substrate which is connected to an opening in the upper substrate or the lower substrate, and a vacuum is drawn from the opening in the upper substrate or the lower substrate, and the sample plate is adsorbed to the side surface of the substrate side wall.

35. The charged particle generation chamber for generating charged particles includes two through-chambers (charged particle generation chambers 1 and 2) formed in a main substrate, the upper part of which is attached to an upper substrate and the lower part of which is attached to a lower substrate, and the charged particle generation chamber 1 and the charged particle generation chamber 2 are adjacent chambers separated by a substrate side wall plate (first substrate side wall plate) having a central hole; The sample plate is inserted through an opening in the upper substrate and placed in the charged particle generation chamber 1. In the charged particle generation chamber 1, the back surface of the sample plate is placed in close contact with the side surface of the substrate side wall, the substrate side wall is provided with a central hole, and the central hole is connected to a cavity in the thickness direction of the main substrate which is connected to an opening in the upper substrate or the lower substrate, and a vacuum is drawn from the opening in the upper substrate or the lower substrate, so that the sample plate is adsorbed to the side surface of the substrate side wall, a conductive film is formed on the side surface of the side wall of the substrate, the conductive film formed on the side surface of the side wall of the substrate is connected to a conductive film formed on the surface of the upper substrate and / or the lower substrate on the side of the charged particle generation chamber 1, the conductive film is further connected to a contact wiring formed on the upper substrate and / or the lower substrate, and the contact wiring is further connected to a conductive film electrode wiring formed on the outer surface of the upper substrate and / or the lower substrate, A voltage is applied to the sample plate, which is a conductor, from the conductive film electrode wiring. A laser beam is irradiated onto the sample attached to the sample plate through an opening in the upper substrate, whereby the sample is decomposed into particles to generate charged particles; Charged particles with the same sign as the charge on the sample plate fly out of the sample plate, a substrate side wall plate (third substrate side wall plate) having a central hole in a direction facing the sample plate is arranged, a conductive film is formed on the surface of the third substrate side wall plate, the conductive film formed on the surface of the third substrate side wall plate is connected to a conductive film formed on the surface of the upper substrate and / or lower substrate facing the charged particle generation chamber 1, the conductive film is further connected to a contact wiring formed on the upper substrate and / or lower substrate, and the contact wiring is further connected to a conductive film electrode wiring formed on the outer surface of the upper substrate and / or lower substrate, A voltage opposite to the voltage applied to the sample plate is applied to the conductive film formed on the surface conductor of the side wall plate of the third substrate from the conductive film electrode wiring, drawing out the charged particles that have come out of the sample plate, The charged particles pass through a central hole formed in the side wall of the third substrate and then pass through a central hole in the side wall of the first substrate to enter the charged particle generation chamber 2, On the inner surface of the charged particle generation chamber 2, conductive film electrodes are formed on the upper and lower substrates, and / or the side surfaces of the first substrate side wall plate, and / or the side surfaces of the second substrate side wall plate, and / or the side surfaces of the other two substrate side walls, and / or the inner surface of the central hole of the first substrate side wall plate; The conductive film electrode is connected to a contact wiring formed on the upper substrate and / or the lower substrate, and the contact wiring is further connected to a conductive film electrode / wiring formed on the outer surface of the upper substrate and / or the lower substrate, The voltage applied to the conductive film electrode has the same sign as the charged particles, and by adjusting the voltage, the charged particles are converged and enter the adjacent chamber through a central hole in a substrate side wall plate (second substrate side wall plate) that separates the charged particle generation chamber 2 from the adjacent chamber; 33. The mass spectrometer according to claim 1, wherein the charged particles passing through a central hole of the second substrate side wall plate enter a mass analysis chamber.

36. an upper substrate is attached to the upper surface of the main substrate, and a lower substrate is attached to the lower surface of the main substrate; a through chamber formed in the main substrate is used as an ionization chamber, and the through chamber has a central hole connected to the ionization chamber, and the central hole is connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate which is connected to an opening (a sample introduction opening) in the upper substrate or the lower substrate; a conductive film (second conductive film) is formed on the inner surface of the central hole, a conductive film (first conductive film) is formed on the inner surface of the ionization chamber, the first conductive film and the second conductive film are connected by a conductive film formed on a side surface of a main substrate of the ionization chamber, and the first conductive film is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate, A sample liquid or a sample gas is introduced from a sample introduction opening, passes through the vertical hole and the central hole, and is introduced into the ionization chamber as a spray gas at an outlet to the ionization chamber; An ionization method characterized in that a voltage is applied to a conductive film formed on the inner surface of a central hole by applying a voltage from an outer electrode formed on an upper substrate and / or a lower substrate, thereby ionizing a gas (spray gas) sprayed at an outlet of an ionization chamber.

37. an upper substrate is attached to the upper surface of the main substrate, and a lower substrate is attached to the lower surface of the main substrate; a through chamber formed in the main substrate is used as an ionization chamber, and the through chamber has a central hole connected to the ionization chamber, and the central hole is connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate which is connected to an opening (a sample introduction opening) in the upper substrate or the lower substrate; Parallel plate conductive film electrodes are formed on the upper and lower parts of the inner surface of the central hole, or parallel plate conductive film electrodes are formed on two side surfaces of the inner surface of the central hole, and each parallel plate conductive film electrode is connected to a conductive film formed on an upper substrate and a lower substrate in the ionization chamber through a conductive film formed on the inner side surface of the ionization chamber, and is further connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate, A sample liquid or a sample gas is introduced from a sample introduction opening, passes through the vertical hole and the central hole, and is introduced into the ionization chamber as a spray gas at an outlet to the ionization chamber; An ionization method characterized in that a high-frequency voltage is applied to a conductive film formed on the inner surface of a central hole by applying a high-frequency voltage from an outer electrode formed on an upper substrate and / or a lower substrate, thereby ionizing a gas (spray gas) sprayed at an outlet of an ionization chamber.

38. 38. A mass spectrometer as described in claim 36 or 37, characterized in that a recess and an opening surrounding a part of the periphery of the ionization chamber are formed in the main substrate, the upper substrate and / or the lower substrate, and the ionization chamber and / or the central hole are cooled or heated by passing a cooling or heating medium through this recess.

39. 39. The mass spectrometer according to claim 36, wherein the ionization chamber is heated using a part of the conductive film formed on the upper substrate and / or the lower substrate.

40. 39. The mass spectrometer according to claim 36, wherein the ionization chamber is heated using a part of the conductive film formed in the central hole.

41. The mass spectrometer according to any one of claims 36 to 40, characterized in that a conductive film electrode is provided on a side wall of the substrate facing the extraction electrode chamber or on a side wall of the substrate, and a voltage having the same sign as that of the ions is applied to the conductive film electrode, thereby extracting the ions and pushing them out into the electrode chamber.

42. An upper substrate is attached to the upper surface of the main substrate, and a lower substrate is attached to the lower surface of the main substrate. One through-chamber formed in the main substrate is used as an ionization chamber. A heating chamber, which is also a through-chamber formed in the main substrate, is provided adjacent to the ionization chamber. The ionization chamber and the heating chamber are either separated by a substrate side wall plate having a central hole (second central hole), or the ionization chamber and the heating chamber are the same through-chamber and there is no substrate side wall plate separating them. a central hole (first central hole) connected to the heating chamber, the first central hole being connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate which is connected to an opening (a sample introduction opening) in the upper substrate or the lower substrate; a conductive film (second conductive film) is formed on the inner surface of the central hole, a conductive film (first conductive film) is formed on the inner surface of the heating chamber, the first conductive film and the second conductive film are connected by a conductive film formed on the side surface of the heating chamber main substrate, and the first conductive film is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate, A sample liquid or sample gas is introduced from the sample introduction opening, passes through the vertical hole and the central hole, and is introduced into the heating chamber as a spray gas at an outlet to the heating chamber; a voltage is applied from an outer electrode formed on the upper substrate and / or the lower substrate, and a current is passed through the first conductive film to heat the first conductive film, thereby heating the heating chamber; An ionization method characterized in that a spire electrode is arranged on an upper substrate and / or a lower substrate in an ionization chamber, the spire electrode is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate, and a voltage is applied to the outer electrode to cause discharge at the spire electrode and ionize the heated spray gas.

43. 43. A mass spectrometer as described in claim 42, characterized in that a recess and an opening surrounding a part of the periphery of the ionization chamber are formed in the main substrate, the upper substrate and / or the lower substrate, and the ionization chamber and / or the central hole are cooled or heated by passing a cooling or heating medium through this recess.

44. 44. The mass spectrometer according to claim 42 or 43, wherein the ionization chamber is heated using a part of the conductive film formed on the upper substrate and / or the lower substrate.

45. 45. The mass spectrometer according to claim 42, wherein the ionization chamber is heated using a part of the conductive film formed in the central hole.

46. The mass spectrometer according to any one of claims 42 to 45, characterized in that a conductive film electrode is provided on a side wall of the substrate facing the extraction electrode chamber or on a side wall of the substrate, and a voltage having the same sign as that of the ions is applied to the conductive film electrode, thereby extracting the ions and pushing them out into the electrode chamber.

47. An upper substrate is attached to the upper surface of the main substrate, and a lower substrate is attached to the lower surface of the main substrate, and a through chamber formed in the main substrate is used as an ionization chamber; a central hole (first central hole) connected to the ion chamber, the first central hole being connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate which is connected to an opening (a sample introduction opening) in the upper substrate or the lower substrate; The ionization method is characterized in that a sample liquid is introduced through a sample introduction opening, passes through vertical holes and a central hole, and a matrix is ​​formed at the outlet to an ionization chamber, and a laser or a fast atomic beam is irradiated from the outside to the matrix through an opening formed in an upper substrate or a lower substrate, resulting in ionization of molecules in the matrix.

48. An upper substrate is attached to the upper surface of the main substrate, and a lower substrate is attached to the lower surface of the main substrate, and a through chamber formed in the main substrate is used as an ionization chamber; a central hole (first central hole) connected to the ion chamber, the first central hole being connected to a vertical hole (perpendicular to the substrate surface) formed in the main substrate which is connected to an opening (a sample introduction opening) in the upper substrate or the lower substrate; The sample liquid is introduced through the sample introduction opening, passes through the vertical hole and the central hole, and a matrix is ​​formed at the outlet to the ionization chamber. An ionization method, comprising: arranging a laser or fast atom beam chamber next to an ionization chamber; irradiating a matrix with light from the laser or fast atom beam chamber; and ionizing molecules in the matrix.

49. The ionization method described in claim 47 or 48, characterized in that the through chamber formed in the main substrate adjacent to the ionization chamber is an extraction electrode chamber, the extraction electrode chamber and the ionization chamber are separated by a substrate side wall plate having a central hole (second central hole), a conductive film electrode is formed on the side of the substrate side wall facing the substrate side wall plate, a voltage of the same sign as the ions is applied to the conductive film, and the generated ions are pushed out by the conductive film electrode and emitted into the extraction electrode chamber through the second central hole in the substrate side wall plate.

50. The ionization method according to any one of claims 47 to 49, characterized in that a recess and an opening surrounding a part of the periphery of the ionization chamber are formed in the main substrate, the upper substrate and / or the lower substrate, and a cooling or heating medium is passed through this recess to cool or heat the ionization chamber and / or the central hole.

51. The ionization method according to any one of claims 47 to 50, characterized in that a conductive film is formed on the inner surface of the central hole and / or the inner surface of the through chamber, and an electric current is passed through the conductive film to generate heat, thereby heating the central hole and / or the through chamber.

52. An upper substrate is attached to the top surface of the main substrate, and a lower substrate is attached to the bottom surface of the main substrate. A ring electrode is formed on the main substrate. A through-chamber formed in the center of the ring electrode is an ion trap chamber. An upper electrode (ion trap upper electrode) formed on the upper substrate is disposed on the top of the ion trap chamber, and a lower electrode (ion trap lower electrode) formed on the lower substrate is disposed on the bottom of the ion trap chamber. The ring electrode is a conductive film (ring conductive film electrode) formed in a ring shape on the main substrate, and the ring conductive film electrode is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate; the ion trap upper electrode and the ion trap lower electrode are connected to outer electrodes formed on the upper substrate and the lower substrate through contact wiring formed on the upper substrate and the lower substrate, the ring electrode is a main substrate having a central hole, and is disposed between the ion trap chamber and the ionization chamber or the extraction electrode / acceleration electrode chamber which is one of the through-chambers disposed adjacent to the ion trap chamber, and is also disposed between the ion detection chamber which is the other of the through-chambers disposed adjacent to the ion trap chamber and the ion trap chamber, one central hole connecting from the ionization chamber to the ion trap chamber and the other central hole connecting from the ion trap chamber to the ion detection chamber, An ion trap mass spectrometer characterized in that, by applying a predetermined voltage to a ring conductive film electrode, an upper ion trap electrode, and a lower ion trap electrode, ions that enter the ion trap chamber from the ionization chamber or the extraction electrode / acceleration electrode chamber through a central hole connected to the ion trap chamber are trapped in the ion trap chamber, and the trapped ions are further ejected from the ion trap chamber through a central hole connected to the ion detection chamber into the ion detection chamber, where they are detected.

53. An upper substrate is attached to the top surface of the main substrate, and a lower substrate is attached to the bottom surface of the main substrate. A ring electrode is formed on the main substrate. A through-chamber formed in the center of the ring electrode is an ion trap chamber. An upper electrode (ion trap upper electrode) formed on the upper substrate is disposed on the top of the ion trap chamber, and a lower electrode (ion trap lower electrode) formed on the lower substrate is disposed on the bottom of the ion trap chamber. The ring electrode is a conductive film (ring conductive film electrode) formed in a ring shape on the main substrate, and the ring conductive film electrode is connected to an outer electrode formed on the upper substrate and / or the lower substrate through a contact wiring formed on the upper substrate and / or the lower substrate; The ion trap upper electrode and the ion trap lower electrode are connected to outer electrodes formed on the upper substrate and the lower substrate through contact wiring formed on the upper substrate and the lower substrate, and the ring electrode is a main substrate having a central hole; a central hole is disposed between the ionization chamber or the extraction electrode / acceleration electrode chamber, which is one of the through-chambers, disposed above the ion trap chamber, and the ion trap chamber, and between the ion detection chamber, which is the other of the through-chambers, disposed adjacent to the ion trap chamber, and the ion trap chamber, one of the central holes connecting the ionization chamber to the ion trap chamber, and the other central hole connecting the ion trap chamber to the ion detection chamber, An ion trap mass spectrometer characterized in that, by applying a predetermined voltage to a ring conductive film electrode, an upper ion trap electrode, and a lower ion trap electrode, ions that enter the ion trap chamber from the ionization chamber or the extraction electrode / acceleration electrode chamber through a central hole connected to the ion trap chamber are trapped in the ion trap chamber, and the trapped ions are further ejected from the ion trap chamber through a central hole connected to the ion detection chamber into the ion detection chamber, where they are detected.

54. An acceleration device including a main substrate having a plurality of through chambers extending from the top surface to the bottom surface, an upper substrate attached to the top surface of the main substrate, a lower substrate attached to the bottom surface of the main substrate, and a substrate side wall plate having a central hole separating the through chambers, wherein the acceleration device is characterized in that charged particles pass through the through chambers and the central hole of the substrate side wall plate.

55. 55. The acceleration device according to claim 54, wherein the acceleration device includes a charged particle generating mechanism and a linear acceleration mechanism, the charged particle generating mechanism and the linear acceleration mechanism being formed in the through chamber.

56. The acceleration device of claim 53 or 55, characterized in that the electrodes and wiring formed in the through chamber are conductive films laminated by one or more methods selected from a CVD method, a PVD method, a plating method, and an electroforming method, and are connected to outer electrodes formed on the upper substrate and / or the lower substrate through contact wiring formed on the upper substrate and / or the lower substrate.

57. The linear acceleration mechanism is configured by arranging a plurality of electrodes (substrate side wall plate electrodes) having a conductive film formed on a substrate side wall plate having a central hole, and is characterized in that the acceleration or deceleration (focusing) of charged particles is performed by applying a static voltage or a high-frequency voltage to the substrate side wall plate electrodes.

58. The acceleration device further has a deceleration (focusing) mechanism, which is configured by arranging a plurality of electrodes (substrate side wall plate electrodes) having a conductive film formed on a substrate side wall plate having a central hole, and the acceleration device described in any one of claims 54 to 57 is characterized in that the deceleration (focusing) mechanism decelerates (focuses) the charged particles by applying a voltage opposite to that of the charged particles to the substrate side wall plate electrode.

59. The acceleration device according to any one of claims 54 to 58, further comprising a deceleration (focusing) mechanism, the deceleration (focusing) mechanism being implemented by a four-pole magnet.

60. The acceleration device of claim 59, characterized in that the quadrupole magnet is arranged in a vertical direction (perpendicular to the substrate surface) from the outside of a substrate having a through-chamber formed in the substrate which is a passage for charged particles, and electromagnets are arranged on both sides in a horizontal direction (perpendicular to the vertical direction) from the outside of a substrate having a through-chamber formed in the substrate which is a passage for charged particles.

61. 61. The acceleration device according to claim 60, wherein, in the case where the electromagnet is arranged laterally, a region of the substrate at the location where the electromagnet is to be arranged is cut, and the electromagnet is arranged in the opening.

62. 62. The acceleration device according to claim 61, wherein the cutting method is laser dicing or high pressure liquid jet dicing.

63. 61. The acceleration device according to claim 60, characterized in that the coils are arranged in the main board on both sides of the through chamber.

64. The acceleration device of claim 63, characterized in that the coil is formed by forming a conductive film (through-hole wiring) in a through hole penetrating the upper and lower substrates and the main substrate, forming wiring that connects the through-hole wiring in the upper and lower substrates to form coil wiring, and both end electrodes of the coil are formed on the upper substrate and / or the lower substrate.

65. The acceleration device described in claim 63, characterized in that a through-chamber (a through-chamber for coil placement) is formed on both sides of the through-chamber (a through-chamber for focusing charged particles), and a coil is inserted into the through-chamber for coil placement to place the coil on both sides of the through-chamber for focusing charged particles.

66. 66. The acceleration device according to claim 65, wherein the coil is arranged by inserting the coil attached to the support substrate into the coil arrangement through-hole.

67. The coil according to any one of claims 59 to 64, characterized in that the coil is arranged at the upper and lower parts of the coil arrangement through-hole. Accelerator.

68. 68. The acceleration device of claim 67, wherein the coil is disposed in close contact with or adjacent to the upper and lower substrates.

69. 69. The acceleration device according to claim 68, wherein the coil is disposed by attaching a substrate on which the coil is formed (coil-formed substrate) to the upper substrate and the lower substrate.

Images