Optical control element

Abstract

To provide an optical control element with improved quality.SOLUTION: The optical control element comprises: a substrate; an electrode provided on the substrate; a liquid crystal layer provided on the electrode; and a high-resistance layer higher in resistance than the electrode and provided between the electrode and the liquid crystal layer. The electrode overlaps with the high-resistance layer in plane view, and a connection part of the high-resistance layer is in contact with the electrode. The electrode at least includes a first electrode and a second electrode.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] An embodiment of the present invention relates to an optical control element. [Background technology]

[0002] A liquid crystal element has been developed that can obtain a lens function by modulating liquid crystal with a voltage applied between electrodes. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2009-157145 A [Patent Document 2] JP 2002-288866 A [Patent Document 3] JP 2000-214429 A [Patent Document 4] International Publication No. 2016 / 117604 [Patent Document 5] JP 2011-017742 A [Patent Document 6] JP 2018-036483 A [Patent Document 7] JP 2010-044266 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present embodiment provides an optical control element of improved quality. [Means for solving the problem]

[0005] The optical control element according to one embodiment includes: A substrate; An electrode provided on the substrate; A liquid crystal layer provided on the electrodes; a high resistance layer having a higher resistance than the electrode and provided between the electrode and the liquid crystal layer; Equipped with the electrode overlaps with the high resistance layer in a plan view, The connection portion of the high resistance layer is in contact with the electrode. [Brief description of the drawings]

[0006] [Figure 1] FIG. 1 is a cross-sectional view showing an example of a schematic configuration of an optical control element according to an embodiment. [Diagram 2] FIG. 2 is a plan view showing an example of a schematic configuration of an optical control element according to an embodiment. [Diagram 3] FIG. 3 is a plan view showing an example of a schematic configuration of an optical control element according to an embodiment. [Figure 4] FIG. 4 is a plan view showing the shape and arrangement of a high-resistance layer when a Fresnel lens is formed. [Diagram 5] FIG. 5 is a plan view showing the shape and arrangement of electrodes facing the outermost high-resistance layer of the annular high-resistance layer shown in FIG. [Figure 6] FIG. 6 is a plan view showing the shape and arrangement of the connection parts provided on the electrodes shown in FIG. [Figure 7] FIG. 7 is an enlarged view of the portion surrounded by the dotted line in FIG. [Figure 8] FIG. 8 is a plan view showing the shape and arrangement of an electrode facing the innermost high-resistance layer of the annular high-resistance layers shown in FIG. [Figure 9] FIG. 9 is a cross-sectional view of the optical control element of the first comparative example. [Figure 10] FIG. 10 is a diagram showing the relationship between the distance between electrodes and the voltage in the optical control element shown in FIG. [Figure 11] FIG. 11 is a cross-sectional view of the optical control element of the second comparative example. [Figure 12] FIG. 12 is a diagram showing the relationship between the distance between electrodes and the voltage in the optical control element shown in FIG. [Figure 13]FIG. 13 is a diagram showing the relationship between the distance between electrodes and the voltage in the optical control element of the embodiment. [Figure 14] FIG. 14 is a diagram showing the voltage distribution in Comparative Example 1, Comparative Example 2, and the embodiment when the resistance of the high-resistance layer is the same. [Figure 15] FIG. 15 is a diagram showing the voltage distribution in Comparative Example 2 and the embodiment when the resistance of the high-resistance layer is the same. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. Note that the disclosure is merely an example, and those who are skilled in the art can easily come up with appropriate modifications while maintaining the gist of the invention, which are naturally included in the scope of the present invention. In addition, in order to make the explanation clearer, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention. In addition, in this specification and each figure, elements similar to those described above with respect to the previous figures may be given the same reference numerals, and detailed explanations may be omitted as appropriate.

[0008] The embodiments described in this specification are not general, but are embodiments that describe the same or corresponding special technical features of the present invention. Hereinafter, an optical control element according to an embodiment will be described in detail with reference to the drawings.

[0009] In this embodiment, the first direction X, the second direction Y, and the third direction Z are perpendicular to each other, but may intersect at an angle other than 90 degrees. The direction toward the tip of the arrow of the third direction Z is defined as up or upward, and the direction opposite to the direction toward the tip of the arrow of the third direction Z is defined as down or downward. The first direction X, the second direction Y, and the third direction Z may also be called the X direction, the Y direction, and the Z direction, respectively.

[0010] Furthermore, in the case of "a second member above the first member" and "a second member below the first member," the second member may be in contact with the first member or may be located away from the first member. In the latter case, a third member may be interposed between the first and second members. On the other hand, in the case of "a second member above the first member" and "a second member below the first member," the second member is in contact with the first member.

[0011] Also, it is assumed that an observation position for observing the optical control element is located at the tip side of the arrow in the third direction Z, and a planar view refers to a view from this observation position toward the XY plane defined by the first direction X and the second direction Y. A cross-sectional view refers to a view of a cross section of the optical control element in the XZ plane defined by the first direction X and the third direction Z, or in the YZ plane defined by the second direction Y and the third direction Z.

[0012] [Embodiment] Fig. 1 is a cross-sectional view showing an example of a schematic configuration of an optical control element of an embodiment. The optical control element LNS of the embodiment has a plurality of lens forming regions LFR. In the example shown in Fig. 1, the cross-sectional shape of one lens forming region LFR is shown.

[0013] The lens forming region LFR includes a substrate SUB1, a substrate SUB2, and a liquid crystal layer LCY. The substrate SUB1 includes a base material BA1, an electrode LEa, an electrode LEb, an insulating layer INS, a high resistance layer HRS, and an alignment film AL1. The substrate SUB2 includes a base material BA2, an electrode UE, and an alignment film AL2. The liquid crystal layer LCY is provided between the substrates SUB1 and SUB2.

[0014] When the electrodes LEa and LEb are not distinguished from each other, they are simply called electrodes LE. As will be described in detail later, the electrode LE has a connection portion CNT that contacts the high resistance layer HRS through a contact hole in the insulating layer INS. For ease of explanation, in FIG. 1, only one of the connection portions CNT of each of the electrodes LEa and LEb contacts the high resistance layer HRS on the substrate BA1. However, the number of connection portions CNT that contact the high resistance layer HRS is not limited to this. The number of electrodes LE is not limited to two, and three or more may be provided. The number of high resistance layers HRS may be one or more.

[0015] In the substrate SUB1, the electrodes LEa and LEb are provided on a base material BA1. An insulating layer INS covers the base material BA1 and the electrodes LEa and LEb. A high-resistance layer HRS is provided on the insulating layer INS. That is, the insulating layer INS is provided between the electrodes LEa and LEb and the high-resistance layer HRS. An alignment film AL1 is provided on the high-resistance layer HRS. The connection portion CNT of the high-resistance layer HRS is connected to each of the electrodes LEa and LEb via a contact hole provided in the insulating layer INS.

[0016] An electrode UE is provided on the substrate SUB2 in contact with the base material BA2. An alignment film AL2 is provided in contact with the electrode UE. A liquid crystal layer LCY is disposed between the alignment film AL1 of the substrate SUB1 and the alignment film AL2 of the substrate SUB2. That is, the alignment films AL1 and AL2 are each in contact with the liquid crystal layer LCY.

[0017] The electrodes LEa and LEb may be formed of a transparent conductive layer, for example, indium zinc oxide (ITO). The high resistance layer HRS may be a conductive layer having a higher resistance than the electrodes LEa and LEb, for example, indium gallium zinc oxide (IGZO). The insulating layer INS is an insulating layer containing silicon, for example, a silicon oxide layer or a silicon nitride layer.

[0018] The optical control element LNS shown in FIG. 1 modulates the liquid crystal layer LCY by a voltage applied between the electrodes LEa and LEb, and the electrode UE, to form a lens. That is, the optical control element LNS is a liquid crystal lens. In the embodiment, the electrodes LEa, LEb, UE, and the liquid crystal layer LCY are referred to as a lens forming region LFR. Although only one lens forming region LFR is shown in FIG. 1, the optical control element LNS has a plurality of lens forming regions LFR. By combining the liquid crystal lens with a display panel, for example, a liquid crystal display panel, it is possible to realize a display device capable of adjusting light emitted from a pixel of the display panel.

[0019] Fig. 2 is a plan view showing an example of a schematic configuration of an optical control element of an embodiment. The optical control element LNS shown in Fig. 2 includes a circular electrode LEa and an annular electrode LEb. The electrode LEa is disposed inside the electrode LEb.

[0020] A wiring WL1 is provided so as to overlap the circular electrode LEa. The wiring WL1 is connected to the electrode LEa via a contact hole CH1. A wiring WL2 is provided so as to overlap the annular electrode LEb. The wiring WL2 is connected to the electrode LEb via contact holes CH2a and CH2b. An electrode pair LX is formed by combining the electrodes LEa and LEb. The area occupied by the electrode pair LX in a plan view is equal to the area occupied by one lens formation region LFR. However, as described above, the number of electrodes LE (including the electrodes LEa and LEb) is not limited to two.

[0021] Although not shown, the wiring WL1 is provided between the substrate BA1 and the electrode LEa. The wiring WL2 is provided between the substrate BA1 and the electrode LEb. An insulating layer may be provided between the wiring WL1 and the electrode LEa and between the wiring WL2 and the electrode LEb. The wiring WL (wiring WL1 and wiring WL2) and the electrode LE (electrodes LEa and electrodes LEb) are connected via contact holes CH1, CH2a, and CH2b provided in the insulating layer.

[0022] Fig. 3 is a plan view showing an example of a schematic configuration of an optical control element of an embodiment. Fig. 1 is a cross-sectional view taken along line A1-A2 in Fig. 3. As shown in Fig. 3, an annular electrode LEb is provided on the outside of a circular electrode LEa. In Fig. 3, the shaded region is the connection portion CNT of the high resistance layer HRS. The connection portion CNT is formed in an annular shape.

[0023] Fig. 4 is a plan view showing the shape and arrangement of the high-resistance layer when forming a Fresnel lens. The high-resistance layer HRS has a plurality of high-resistance layers. In Fig. 4, the high-resistance layer HRS has five high-resistance layers HRS1, HRS2, HRS3, HRS4, and HRS5. However, the number of high-resistance layers HRS is not limited to this, and any number of high-resistance layers may be provided.

[0024] The high-resistance layer HRS1 has a circular shape. The high-resistance layers HRS2, HRS3, HRS4, and HRS5 are concentrically arranged at equal intervals around the circular high-resistance layer HRS1.

[0025] It is preferable that the distance between the high resistance layer HRS1 and the high resistance layer HRS2, the distance between the high resistance layer HRS2 and the high resistance layer HRS3, the distance between the high resistance layer HRS3 and the high resistance layer HRS4, and the distance between the high resistance layer HRS4 and the high resistance layer HRS5 are as short as possible. The distance may be, for example, about 2 μm. The width of each of the high resistance layer HRS2, the high resistance layer HRS3, the high resistance layer HRS4, and the high resistance layer HRS5 may be a width corresponding to the phase change that the lens can configure. The number of annular high resistance layers is arbitrary and may be designed according to the lens power and the amount of phase change per annular high resistance layer.

[0026] Fig. 5 is a plan view showing the shape and arrangement of an electrode facing the outermost high-resistance layer among the annular high-resistance layers shown in Fig. 4. Fig. 5 shows an electrode LE facing the high-resistance layer HRS5 in the third direction Z among the high-resistance layers HRS1 to HRS5 shown in Fig. 4.

[0027] However, in Fig. 5, only the electrode LE is shown, and the high-resistance layer HRS5 is not shown. In Fig. 5, the areas occupied by the electrodes LE51, LE52, and LE53 are the same as those of the high-resistance HRS5. That is, the electrodes LE51, LE52, and LE53, and the high-resistance HRS5 overlap each other in a plan view.

[0028] Opposing the high resistance layer HRS5 (not shown), annular electrodes LE51, LE52, and LE53 are provided. Note that the number of electrodes is not limited thereto, and two or less electrodes LE or four or more electrodes LE may be provided facing the high resistance layer HRS5.

[0029] It is preferable that the distance between the electrodes LE51 and LE52, and the distance between the electrodes LE52 and LE53 are as short as possible. The distances do not have to coincide with the distances between the multiple high resistance layers HRS described above.

[0030] 5, the electrode LE facing the high resistance layer HRS5 is described, but is not limited to the high resistance layer HRS5. It is sufficient that a plurality of annular electrodes LE are provided facing the other annular high resistance layers HRS2, HRS3, and HRS4, respectively. The electrode LE facing the circular high resistance layer HRS1 will be described in detail later.

[0031] Fig. 6 is a plan view showing the shape and arrangement of the connection parts provided on the electrodes shown in Fig. 5. Fig. 7 is an enlarged view of the part surrounded by the dotted line in Fig. 6.

[0032] 6 and 7, the electrodes LE51, LE52, and LE53 are provided with a connection portion CNT (hatched area) of the high resistance layer HRS5. The connection portions CNT corresponding to the electrodes LE51, LE52, and LE53 are respectively referred to as the connection portion CNT51, the connection portion CNT52, and the connection portion CNT53. The connection portions CNT (the connection portion CNT51, the connection portion CNT52, and the connection portion CNT53) are formed in a circular ring shape. The width of each of the connection portions CNT51, the connection portion CNT52, and the connection portion CNT53 is smaller than the width of the electrode LE (the electrode LE51, the electrode LE52, and the electrode LE53) provided thereon.

[0033] The widths of the electrodes LE51, LE52, and LE53 can be appropriately adjusted to optimum widths for creating a distribution of phase differences.

[0034] Two or more electrodes LE (electrode LE51, electrode LE52, and electrode LE53 facing the high-resistance layer HRS5 in FIG. 5) are provided facing one high-resistance layer HRS (high-resistance layer HRS1, high-resistance layer HRS2, high-resistance layer HRS3, high-resistance layer HRS4, and high-resistance layer HRS5 in FIG. 4), but more electrodes may be provided.

[0035] The innermost electrode LE and the high resistance layer HRS are connected at the innermost position, and the outermost electrode LE and the high resistance layer HRS are connected at the outermost position. The connection positions of the other electrodes LE and the high resistance layers HRS can be arbitrarily set.

[0036] For example, of the electrodes LE51, LE52, and LE53, the connection portion CNT51 in contact with the electrode LE51 is disposed closer to the center of the lens-forming region LFR, in other words, further inward. Of the electrodes LE51, LE52, and LE53, the connection portion CNT53 in contact with the electrode LE53 is disposed farther from the center of the lens-forming region LFR, in other words, further outward. In other words, the connection portion CNT51 in contact with the electrode LE51 is disposed further inward in the region occupied by the electrode LE51, and the connection portion CNT53 in contact with the electrode LE53 is disposed further outward in the region occupied by the electrode LE53.

[0037] Fig. 8 is a plan view showing the shape and arrangement of an electrode facing the innermost high-resistance layer among the annular high-resistance layers shown in Fig. 4. Fig. 8 shows an electrode LE facing the high-resistance layer HRS1 in the third direction Z among the high-resistance layers HRS1 to HRS5 shown in Fig. 4.

[0038] However, in Fig. 8, only the electrode LE is shown, and the high-resistance layer HRS1 is not shown. In Fig. 8, the areas occupied by the electrodes LE11, LE12, and LE13 are the same as those of the high-resistance HRS1. That is, the electrodes LE11, LE12, and LE13, and the high-resistance HRS1 overlap each other in a planar view.

[0039] Opposing the high resistance layer HRS1 (not shown), a circular electrode LE11, an annular electrode LE12, and an annular electrode LE13 are provided. Note that the number of electrodes is not limited to this, and two or less electrodes LE or four or more electrodes LE may be provided facing the high resistance layer HRS1.

[0040] It is preferable that the distance between the electrode LE11 and the electrode LE12, and the distance between the electrode LE12 and the electrode LE13 are as short as possible. The distances do not have to coincide with the distances between the multiple high resistance layers HRS described above.

[0041] As shown in Fig. 8, a connection portion CNT11 (hatched region) of the high resistance layer HRS1 is provided in contact with the electrode LE11, and a connection portion CNT12 and a connection portion CNT13 (hatched region) of the high resistance layer HRS1 are provided in contact with the electrodes LE12 and LE13, respectively. The connection portion CNT11 in contact with the electrode LE11 is formed in a circular shape, and the connection portion CNT12 and the connection portion CNT13 in contact with the electrodes LE12 and LE13, respectively, are formed in annular shapes. The diameter of the circular-shaped connection portion CNT11 in contact with the electrode LE11 is smaller than the diameter of the electrode LE11. The width of each of the annular-shaped connection portions CNT12 and CNT13 in contact with the electrodes LE12 and LE13 is smaller than the width of the electrode LE provided.

[0042] The widths of the electrodes LE11, LE12, and LE13 can be appropriately adjusted to optimum widths for creating a distribution of phase differences.

[0043] In FIG. 8, two or more electrodes LE (electrode LE11, electrode LE12, electrode LE13) are provided facing one high resistance layer HRS1 (not shown), but more electrodes may be provided.

[0044] 8, the innermost electrode LE and the high resistance layer HRS are connected at the innermost side, and the outermost electrode LE and the high resistance layer HRS are connected at the outermost side. The connection positions of the other electrodes LE and the high resistance layers HRS can be arbitrarily set.

[0045] For example, of the electrodes LE11, LE12, and LE13, the connection portion CNT11 in contact with the electrode LE11 is disposed closer to the center of the lens-forming region LFR, in other words, further inward. Of the electrodes LE11, LE12, and LE13, the connection portion CNT13 in contact with the electrode LE13 is disposed farther from the center of the lens-forming region LFR, in other words, further outward. In other words, the connection portion CNT11 in contact with the electrode LE11 is disposed further inward (at the center) of the region occupied by the electrode LE11, and the connection portion CNT13 in contact with the electrode LE13 is disposed further outward of the region occupied by the electrode LE13.

[0046] Here, as Comparative Example 1, an example is considered in which the electrodes LEa and LEb are in contact with the high resistance layer HRS but are not overlapped with the high resistance layer HRS in a planar view. Also, as Comparative Example 2, an example is considered in which the electrodes LEa and LEb are overlapped with the high resistance layer HRS but are not in contact with the high resistance layer HRS in a planar view.

[0047] Fig. 9 is a cross-sectional view of the optical control element of Comparative Example 1. In the optical control element LNSr shown in Fig. 9, the area where the electrodes LEa and LEb overlap with the high resistance layer HRS is extremely small. Since the area occupied by the electrodes LEa and LEb in a plan view is small, it can be said that the electrodes LEa and LEb shown in Fig. 9 do not overlap with the high resistance layer HRS at all.

[0048] Fig. 10 is a diagram showing the relationship between the distance between electrodes and the voltage in the optical control element shown in Fig. 9. In Fig. 10, the horizontal axis indicates the distance PST to the electrode LEa, with the position of the electrode LEb being 0. The vertical axis indicates the applied voltage V.

[0049] In FIG. 10, the resistance of the high resistance layer HRS is plotted. The resistance of the high resistance layer HRS is 1.00E+02 (1.00×10 2 ) [Ω*cm], 1.00E+01(1.00×10 1 )[Ω*cm], 1.00E+00(1.00)[Ω*cm], 1.00E-01(1.00×10 -1 ) [Ω*cm].

[0050] 10, even if the resistance of the high resistance layer HRS is changed, there is no change in the relationship between the distance PST between the electrodes LEa and LEb and the voltage V. The voltage V has a linear distribution with respect to the distance PST between the electrodes LEa and LEb.

[0051] Fig. 11 is a cross-sectional view of the optical control element of Comparative Example 2. In the optical control element LNSr shown in Fig. 11, as described above, the electrodes LEa and LEb are not in contact with the high resistance layer HRS and are spaced apart from each other.

[0052] Fig. 12 is a diagram showing the relationship between the distance between the electrodes and the voltage in the optical control element shown in Fig. 11. In Fig. 12, the horizontal axis indicates the distance PST to the end of the electrode LEa, with the end of the electrode LEb being set at 0. The vertical axis indicates the applied voltage V.

[0053] In FIG. 12, the resistance of the high resistance layer HRS is plotted. The resistance of the high resistance layer HRS is 1.0E+03 (1.0×10 3 ) [Ω*cm], 2.0E+02(2.0×10 2 ) [Ω*cm], 1.0E+02(1.0×10 2 ) [Ω*cm], 5.0E+01(5.0×10 1 ) [Ω*cm], 2.0E+01(2.0×10 1 ) [Ω*cm], 1.0E+01(1.0×10 1 ) [Ω*cm].

[0054] 12, the voltage V has a nonlinear distribution with respect to the distance PST between the electrodes LEa and LEb. When the resistance of the high resistance layer HRS is changed, the voltage distribution also changes.

[0055] In Comparative Example 1, the voltage V has a linear distribution with respect to the distance PST. Since the linear distribution of the voltage V does not change even if the resistance of the high resistance layer HRS is changed (see FIGS. 9 and 10), when a desired linear distribution of the voltage cannot be obtained, a large number of high resistance layers are required.

[0056] In Comparative Example 2, the voltage V has a nonlinear distribution with respect to the distance PST. The distribution of the voltage V changes drastically due to the fluctuation in the resistance of the high resistance layer HRS (see FIGS. 11 and 12), and therefore there is a concern that the process margin will be narrow.

[0057] Fig. 13 is a diagram showing the relationship between the distance between electrodes and the voltage in the optical control element of the embodiment. In Fig. 13, the horizontal axis indicates the distance PST to the connection part CNT of the electrode LEa, with the position of the connection part CNT of the electrode LEb being set to 0 (see also Fig. 1). The vertical axis indicates the applied voltage V.

[0058] In FIG. 13, the resistance of the high resistance layer HRS is 5.0E+01 (5.0×10 1 ) [Ω*cm], 1.0E+02(1.0×10 2 ) [Ω*cm]. Voltages of 0 V, 15 V, and 0 V are applied to the electrodes LEb, LEa, and UE, respectively.

[0059] 13, even if the resistance of the high resistance layer HRS is different, the distribution of the voltage V shows a similar tendency that it increases as the distance PST increases. This makes it possible to obtain a voltage distribution with a similar tendency even if the resistance of the high resistance layer HRS changes due to manufacturing variations.

[0060] 14 is a diagram showing the distribution of voltages in Comparative Example 1, Comparative Example 2, and the embodiment when the resistance of the high resistance layer is the same. In FIG. 14, the resistance of the high resistance layer HRS is 1.0E+02 (1.0×10 2 ) [Ω*cm]. Cross sections of the optical control elements of Comparative Example 1, Comparative Example 2, and the embodiment are shown in FIG. 9, FIG. 11, and FIG.

[0061] 14, in the optical control element LNS of the embodiment, the distribution of the voltage V with respect to the distance PST is a nonlinear distribution, similar to that of Comparative Example 2. On the other hand, the distribution of the voltage V in Comparative Example 1 is a linear distribution, which is different from the voltage distribution in the embodiment.

[0062] 15 is a diagram showing the distribution of voltages in Comparative Example 2 and the embodiment when the resistance of the high resistance layer is the same. In FIG. 15, the resistance of the high resistance layer HRS is 5.0E+01 (5.0×10 1 ) [Ω*cm], which is smaller than that in FIG. 14. The cross sections of the optical control elements of Comparative Example 2 and the embodiment are as shown in FIG. 11 and FIG.

[0063] 15, the voltage V with respect to the distance PST in Comparative Example 2 has a constant value when the distance PST is small. If the resistance of the high resistance layer HRS is small, there is a risk that the voltage V will not change when the distance PST is small.

[0064] On the other hand, in the optical control element LNS of the embodiment, the resistance of the high resistance layer HRS is small, and even if the distance PST is small, the voltage V changes with respect to the distance PST.

[0065] In the optical control element LNS of the embodiment, the voltage V with respect to the distance PST between the electrodes LEb and LEa shows a nonlinear distribution. Even if the resistance of the high resistance layer HRS changes, the voltage V shows the same behavior. This makes it possible to obtain a liquid crystal lens with improved quality.

[0066] As described above, the optical control element LNS of the embodiment is a liquid crystal lens. By combining the liquid crystal lens with a display panel, for example, a liquid crystal display panel, it is possible to realize a display device capable of adjusting light emitted from pixels of the display panel.

[0067] The optical control element LNS of the embodiment is capable of adjusting the angle of light incident on the optical control element LNS and outputting the light. Therefore, the optical control element LNS can also function as a viewing angle control element or a diffraction grating.

[0068] Although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included in the scope and spirit of the invention, and are included in the scope of the invention and its equivalents described in the claims. [Explanation of symbols]

[0069] HRS...high resistance layer, LCY...liquid crystal layer, LEa...electrode, LEb...electrode, LFR...lens forming region, LNS...optical control element, LX...electrode pair, PST...distance, UE...electrode, V...voltage.

Claims

1. A substrate; An electrode provided on the substrate; A liquid crystal layer provided on the electrodes; a high resistance layer having a higher resistance than the electrode and provided between the electrode and the liquid crystal layer; Equipped with the electrode overlaps with the high resistance layer in a plan view, An optical control element, wherein the connection portion of the high resistance layer is in contact with the electrode.

2. The electrodes include at least a first electrode and a second electrode, the second electrode has a circular ring shape; The optical control element according to claim 1 , wherein the first electrode has a circular shape and is provided inside the second electrode.

3. The semiconductor device further includes an insulating layer provided between the electrode and the high resistance layer, The optical control element according to claim 1 , wherein the connection portion of the high resistance layer contacts the electrode through a contact hole provided in the insulating layer.

4. The electrodes include at least a first electrode and a second electrode, The optical control element according to claim 1 , wherein the optical control element is a liquid crystal lens that modulates the liquid crystal layer based on a distribution of voltages applied to the first electrode and the second electrode.

5. the high resistance layer includes a plurality of high resistance layers, The optical control element according to claim 1 , wherein the electrode comprises a plurality of electrodes facing the plurality of high resistance layers, respectively.

6. a first substrate including the base material, the electrode, the high resistance layer, and a first alignment film; a second substrate including a third electrode and a second alignment film; the liquid crystal layer sandwiched between the first substrate and the second substrate; The optical control element of claim 1 , comprising:

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