Member for semiconductor manufacturing device

Abstract

To provide a member for semiconductor manufacturing device that has higher corrosion resistance.SOLUTION: A member 1 for semiconductor manufacturing device as an electrostatic chuck which electrostatically attracts and holds a wafer W is made of a sintered compact including a crystal phase of complex oxide including Mg (magnesium) and Mo (molybdenum). An etching rate for this member is smaller than an etching rate for a sintered compact of Al2O3 and Y2O3. Namely, the member has higher corrosion resistance than the sintered compact of Al2O3 and Y2O3, and this constitution is used for the member for semiconductor manufacturing device to suppress corrosion and formation of particles occurring in semiconductor manufacture utilizing plasma.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a member for a semiconductor manufacturing device. [Background technology]

[0002] In semiconductor manufacturing equipment used for performing dry processes and plasma coating in semiconductor manufacturing, highly reactive fluorine (F)-based plasma, chlorine (Cl)-based plasma, and bromine (Br)-based plasma are used as plasma for etching and cleaning. High corrosion resistance is required for plasma-using components such as electrostatic chucks and heaters that come into contact with Si wafers, as well as the chambers and chamber parts that cover them. Semiconductor manufacturing equipment components using sintered bodies of Al2O3 (alumina) and Y2O3 (yttria) are known as components with high corrosion resistance (see, for example, Patent Documents 1 to 3). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 11-278935 [Patent Document 2] JP 2001-179080 A [Patent Document 3] JP 2006-69843 A Summary of the Invention [Problem to be solved by the invention]

[0004] Although the sintered bodies of Al2O3 and Y2O3 described in Patent Documents 1 to 3 have corrosion resistance against plasma used in semiconductor manufacturing, there is room for improvement in the corrosion resistance of semiconductor manufacturing equipment members.

[0005] The present invention has been made to solve at least part of the above-mentioned problems, and has an object to provide a semiconductor manufacturing equipment member having higher corrosion resistance. [Means for solving the problem]

[0006] The present invention has been made to solve at least part of the above-mentioned problems, and can be realized in the following forms.

[0007] (1) According to one aspect of the present invention, there is provided a semiconductor manufacturing equipment member comprising a sintered body including a crystalline phase of a composite oxide including Mg (magnesium) and Mo (molybdenum).

[0008] According to this configuration, a semiconductor manufacturing equipment member containing both Mg and Mo is provided. The etching rate of this member is smaller than that of a sintered body of Al2O3 and Y2O3. In other words, this configuration has higher corrosion resistance than a sintered body of Al2O3 and Y2O3. Therefore, by using this configuration for a semiconductor manufacturing equipment member, it is possible to suppress corrosion and particle generation that occurs during semiconductor manufacturing using plasma.

[0009] (2) In the semiconductor manufacturing equipment member of the above aspect, the molar ratio of the amount of Mg element to the amount of Mo element contained in the sintered body may be 1 or more. According to this configuration, the etching rate of the semiconductor manufacturing equipment member is smaller than that when the amount of Mg element contained in the sintered body is less than the amount of Mo element, which further suppresses corrosion and particle generation during semiconductor manufacturing.

[0010] (3) In the semiconductor manufacturing equipment member of the above aspect, the sintered body may have an open porosity of 0.1% or less. According to this configuration, the open porosity is 0.1% or less and the resulting structure is dense, so that corrosion and particle generation that occur during semiconductor manufacturing can be further suppressed.

[0011] The present invention can be realized in various forms, for example, in the form of a composite material, a sintered body, a component for semiconductor manufacturing equipment, a material used in semiconductor manufacturing, and a system including these, a method for manufacturing a component for semiconductor manufacturing equipment, and a system including these, etc. [Brief description of the drawings]

[0012] [Figure 1] 1 is a schematic perspective view of a semiconductor manufacturing equipment member according to an embodiment of the present invention. [Diagram 2] FIG. 11 is an explanatory diagram of evaluation results of a plasma resistance test for an example and a comparative example. [Diagram 3] FIG. 11 is an explanatory diagram of evaluation results of a plasma resistance test for an example and a comparative example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] FIG. 1 is a schematic perspective view of a semiconductor manufacturing equipment member 1 according to an embodiment of the present invention. The semiconductor manufacturing equipment member 1 (hereinafter, simply referred to as "member 1") shown in FIG. 1 is an electrostatic chuck that holds a wafer W by adsorbing it with electrostatic attraction. The member 1, which is an electrostatic chuck, is provided in, for example, an etching device. The member 1 of this embodiment is made of a sintered body containing a crystalline phase of a composite oxide containing Mg (magnesium) and Mo (molybdenum). The etching rate of the member 1 is smaller than, for example, the etching rate of a sintered body of Al2O3 and Y2O3. As a result, the member 1 has high corrosion resistance and can suppress corrosion and particle generation that occur when using plasma.

[0014] The chemical formula of the sintered body that constitutes member 1 is the amount of Mg contained in the sintered body X(0 <X<1)とすると、Mg X Mo 1-X O 3-2X For example, when the ratio of Mg and Mo contained in the sintered body is the same (X=0.5), that is, when the molar ratio of the amount of Mg element to the amount of Mo element contained in the sintered body is 1, the chemical formula of the sintered body is MgMoO4. Note that, hereinafter, an example of MgMoO4 will be described.

[0015] To manufacture the MgMoO4 that constitutes the member 1, first, the oxides MgO and MoO3, which are the materials for the sintered body, are mixed together so that they will have the composition MgMoO3 after sintering. In the mixing process, ethanol is added, and then the mixture is crushed and mixed using a ball mill. The mixed powder is sintered by hot pressing to manufacture a sintered body containing the crystal phase of MgMoO4. In the hot pressing process, the temperature is 750 degrees Celsius (℃) and 204 kgf / cm 2 The mixed powder was then kept for 3 hours under an Ar (argon) atmosphere. X-ray diffraction (XRD) confirmed that the sintered sample contained a crystalline phase of MgMoO4.

[0016] 2 and 3 are explanatory diagrams of the evaluation results of the plasma resistance test for MgMoO4 as an embodiment and Y2O3, Al2O3, MgO, and MoO3 as comparative examples. In Figs. 2 and 3, the open porosity and etching rate of each sample of the embodiment and comparative example are shown. In the plasma resistance test, each sample was evaluated in a chamber with a pressure of 20 mtorr, in which microwave-excited plasma of 2000 W, bias of 200 W, and arbitrary gas were supplied for 2 hours. Fig. 2 shows the evaluation results when Cl2 gas was supplied at 50 sccm as the arbitrary gas. Fig. 3 shows the evaluation results when HBr gas was supplied at 10 sccm.

[0017] As shown in Fig. 2, the open porosity of the MgMoO4 sample used in the plasma resistance test using Cl2 gas was 0.1(%). The etching rate of MgMoO4 was 0.460(μm / h), which was smaller than the etching rates of Y2O3, Al2O3, and MgO in the comparative examples. The etching rate of MoO3 in the comparative example was not measured because the open porosity was high at 2.2(%) and the sample was not densely formed.

[0018] As shown in Fig. 3, the open porosity of the MgMoO4 sample used in the plasma resistance test using HBr gas was 0.1%. The etching rate of MgMoO4 was 0.621 (μm / h), which was smaller than the etching rates of Y2O3, Al2O3, and MgO in the comparative examples.

[0019] As described above, the member 1 of this embodiment is composed of a sintered body containing a crystal phase of a composite oxide containing Mg and Mo. The etching rate of this member 1 is smaller than the etching rates of sintered bodies of Al2O3, Y2O3, and MgO, as shown in Figures 2 and 3. That is, the sintered body constituting the member 1 has higher corrosion resistance than sintered bodies of Al2O3, Y2O3, and MgO. Therefore, Mg X Mo 1-X O 3-2X By using this sintered body for the member 1, it is possible to suppress corrosion and particle generation that occur during semiconductor manufacturing using plasma.

[0020] Moreover, in MgMoO4 contained in the sintered body constituting the member 1 of this embodiment, the molar ratio, which is the amount of Mg element to the amount of Mo element, is 1. In the member 1 of this embodiment, the etching rate of the member 1 is lower than when the amount of Mg element contained in the sintered body is less than the amount of Mo element. As a result, by using the member 1, corrosion and generation of particles occurring during semiconductor manufacturing can be further suppressed.

[0021] Moreover, the open porosity of the MgMoO4 of the embodiment is 0.1(%) as shown in Figures 2 and 3. That is, the sintered body constituting the MgMoO4 of the embodiment is densely formed with an open porosity of 0.1%, which can further suppress corrosion and particle generation that occurs during semiconductor manufacturing.

[0022] <Modifications of this embodiment> The present invention is not limited to the above-described embodiment, and can be embodied in various forms without departing from the spirit and scope of the invention. For example, the following modifications are also possible.

[0023] In the above embodiment, an electrostatic chuck is described as an example of a semiconductor manufacturing equipment member using a sintered body containing a crystalline phase of a composite oxide containing Mg and Mo, but the semiconductor manufacturing equipment member using the sintered body can be modified. For example, the sintered body may be used for a heater, a chamber, and a chamber part.

[0024] In the above embodiment, the Mg of the composite oxide containing Mg and Mo is X Mo 1-X O 3-2X In the above, the molar ratio of the amount of Mg element to the amount of Mo element is the same (X=0.5) as in the above, but the molar ratio of the amount of Mg element to the amount of Mo element can be changed. For example, the composite oxide is MgMo3O 10 Alternatively, Mg3MoO6 with x=0.75 may be used. X Mo 1-X O 3-2X The Mo contained in has a high melting point and boiling point, so it has chemical stability against Cl2 gas and HBr gas. X Mo 1-X O 3-2X By using this sintered body for the member 1, corrosion and particle generation that occur during semiconductor manufacturing are suppressed. In addition, as shown in Figs. 2 and 3, MgO, an oxide of Mg, has a lower open porosity and is formed more densely than MoO3, an oxide of Mo. Therefore, in a composite oxide, the open porosity becomes lower and the etching rate becomes smaller when the content of Mg is higher than that of Mo. X Mo 1-X O 3-2X In this case, it is preferable that X=0.5 or more, that is, the molar ratio which is the amount of Mg element to the amount of Mo element, is 1 or more.

[0025] The open porosity of MgMoO4 shown in Figures 2 and 3 is 0.1(%), but it may be greater than 0.1(%) or less than 0.1(%). In particular, the open porosity of MgMoO4 is preferably 0.1(%) or less.

[0026] Although the present aspect has been described above based on the embodiment and modified examples, the above-mentioned embodiment of the aspect is intended to facilitate understanding of the present aspect and does not limit the present aspect. The present aspect may be modified or improved without departing from the spirit and scope of the claims, and equivalents are included in the present aspect. Furthermore, if a technical feature is not described as essential in this specification, it may be deleted as appropriate.

[0027] The present invention can also be realized in the following forms. [Application example 1] A semiconductor manufacturing equipment member, A member for semiconductor manufacturing equipment, comprising a sintered body including a crystalline phase of a composite oxide containing Mg (magnesium) and Mo (molybdenum). [Application example 2] The semiconductor manufacturing equipment member according to Application Example 1, A member for semiconductor manufacturing equipment, characterized in that a molar ratio of the amount of Mg element to the amount of Mo element contained in the sintered body is 1 or more. [Application example 3] The semiconductor manufacturing equipment member according to Application Example 1 or Application Example 2, A semiconductor manufacturing equipment member, characterized in that the sintered body has an open porosity of 0.1% or less. [Explanation of symbols]

[0028] 1...Components (components for semiconductor manufacturing equipment) W…wafer

Claims

1. A semiconductor manufacturing equipment member, A member for semiconductor manufacturing equipment, comprising a sintered body including a crystalline phase of a composite oxide including Mg (magnesium) and Mo (molybdenum).

2. 2. The semiconductor manufacturing equipment member according to claim 1, A member for semiconductor manufacturing equipment, characterized in that a molar ratio of the amount of Mg element to the amount of Mo element contained in the sintered body is 1 or more.

3. The semiconductor manufacturing equipment member according to claim 2, A semiconductor manufacturing equipment member, characterized in that the sintered body has an open porosity of 0.1% or less.

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