Deposition device

Abstract

To heat a processed object efficiently and inhibit temperature rise of a portion close to a heating part in a vacuum vessel and an antenna.SOLUTION: A deposition device (1) includes: a vacuum vessel (2) configured to store a processed object (W1) therein; an antenna (3) for generating plasma (P) in the vacuum vessel (2); a heater (81) configured to heat the processed object (W1); a radiation inhibition member (5) which contains the heater (81) therein and inhibits radiation from the heater (81) to the vacuum vessel (2) and the antenna (3); and a holder (8) which is provided outside the radiation inhibition member (5) and holds the processed object (W1).SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus. [Background technology]

[0002] Patent Document 1 discloses a plasma processing apparatus that includes a linear antenna disposed in a vacuum chamber and a high-frequency power source that applies high-frequency waves to the antenna to generate inductively coupled plasma in the vacuum chamber, and processes a substrate in the vacuum chamber using plasma. A substrate holder that holds the substrate is provided in the vacuum chamber, and a heater that heats the substrate is provided in the substrate holder. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Patent No. 6341329 Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the plasma processing apparatus disclosed in Patent Document 1, a heater is provided in the substrate holder that holds the substrate, and heat from the heater is conducted to the substrate via the substrate holder, leaving room for improvement in terms of efficiently heating the substrate.

[0005] In addition, in the above plasma processing apparatus, the temperatures of the vacuum container and the antenna rise due to radiation from the heater to the vacuum container and the antenna, so there is room for improvement in terms of reducing the temperature rise of the vacuum container and the antenna. One aspect of the present invention aims to efficiently heat the workpiece and to suppress the temperature rise of the antenna and a portion of the vacuum container close to the heating part. [Means for solving the problem]

[0006] In order to solve the above problems, a film formation apparatus according to one embodiment of the present invention is a film formation apparatus that forms a film on a workpiece, and includes a vacuum container that houses the workpiece, an antenna for generating plasma inside the vacuum container, a heating unit that heats the workpiece, a radiation suppression member that houses the heating unit and suppresses radiation from the heating unit to the vacuum container and the antenna, and a holder that is provided outside the radiation suppression member and holds the workpiece. Effect of the Invention

[0007] According to one aspect of the present invention, it is possible to efficiently heat an object to be processed and to suppress a temperature rise in a portion of a vacuum vessel close to a heating portion and in an antenna. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view showing a configuration of a film forming apparatus according to an embodiment of the present invention. [Diagram 2] 2 is a diagram showing a configuration around an antenna in the film forming apparatus shown in FIG. 1. [Diagram 3] 2 is a diagram for explaining the structure of a holder included in the film forming apparatus shown in FIG. [Figure 4] FIG. 4 is a cross-sectional view showing a configuration of a film forming apparatus according to a first modified example of the present invention. [Diagram 5] FIG. 11 is a cross-sectional view showing the configuration of a film forming apparatus according to a second modified example of the present invention. [Figure 6] FIG. 11 is a cross-sectional view showing the configuration of a film forming apparatus according to a third modified example of the present invention. [Figure 7] FIG. 11 is a diagram showing a configuration of a film forming apparatus according to a fourth modified example of the present invention. [Figure 8] FIG. 11 is a diagram showing a configuration of a film forming apparatus according to a fifth modified example of the present invention. [Figure 9] FIG. 13 is a diagram showing a configuration of a film forming apparatus according to a sixth modified example of the present invention. [Figure 10] FIG. 13 is a diagram showing a configuration of a film forming apparatus according to a seventh modified example of the present invention. [Figure 11]FIG. 13 is a diagram showing a configuration of a film forming apparatus according to Modification 8 of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Fig. 1 is a cross-sectional view showing the configuration of a film forming apparatus 1 according to an embodiment of the present invention. In Fig. 1, the extension direction of the antenna 3 is the X-axis direction, the direction in which the holder 8 and the antenna 3 are arranged is the Z-axis direction, and the direction perpendicular to both the X-axis direction and the Z-axis direction is the Y-axis direction. The X-axis direction and the Z-axis direction are perpendicular to each other. The definitions of the X-axis direction, the Y-axis direction, and the Z-axis direction described here are also applied to other figures.

[0010] <Configuration of Film Forming Apparatus 1> The film forming apparatus 1 is a plasma CVD apparatus that forms a film on a workpiece W1 by a plasma CVD (Chemical Vapor Deposition) method using an inductively coupled plasma P. The workpiece W1 may be formed, for example, in a rod shape, or may be a tool such as a drill or end mill formed in a spiral shape. The workpiece W1 is also made of, for example, a metal material.

[0011] 1, the film forming apparatus 1 includes a vacuum vessel 2, an antenna 3, a high-frequency power supply 4, a matching box 41, a radiation suppression member 5, a gas supply mechanism 50, a vacuum exhaust device 6, a pressure regulator 61, an opening / closing unit 7, and a moving mechanism 71. The film forming apparatus 1 also includes a holder 8, a heater 81, a heater power supply 9, an insulating cover 10, an insulating member 11, and a bias power supply 12.

[0012] The radiation suppression member 5, gas supply mechanism 50, opening / closing unit 7, moving mechanism 71, holder 8, heater 81, heater power supply 9, and bias power supply 12 are provided on both sides of the antenna 3 in the vacuum vessel 2. In other words, assuming that these components form one set, two sets are provided at positions facing each other with respect to the position where the antenna 3 is disposed.

[0013] This allows the workpieces W1 to be placed on both sides of the antenna 3 inside the vacuum chamber 2, and allows efficient film formation on many workpieces W1. In addition, the gas G, which will be described later, can be ejected from both sides of the antenna 3 to make the gas flow distribution uniform. Hereinafter, of these two pairs, the one pair on the positive Z-axis side will be described.

[0014] <Configuration of the Vacuum Vessel 2 and the Vacuum Exhaust Device 6> The vacuum vessel 2 is a vessel made of a metal such as SUS (stainless steel) or aluminum, and is electrically grounded. The vacuum vessel 2 accommodates the workpiece W1 inside. The inside of the vacuum vessel 2 is evacuated by a vacuum exhaust device 6. The vacuum exhaust device 6 has a pressure regulator 61 such as a valve that adjusts the pressure inside the vacuum vessel 2, and a pump (not shown). The vacuum exhaust device 6 controls the pressure regulator 61 to adjust the pressure inside the vacuum vessel 2 during plasma generation.

[0015] <Antenna 3 Configuration> The antenna 3 is for generating plasma P inside the vacuum vessel 2, and is formed in a straight line. The antenna 3 is disposed inside the vacuum vessel 2 along the holder 8. The antenna 3 penetrates the vacuum vessel 2, and a power feeding end 3A and a grounding end 3B of the antenna 3 are disposed outside the vacuum vessel 2. The length of the antenna 3 is, for example, 30 cm or more.

[0016] The antenna 3 is provided in the vacuum vessel 2 via an insulating member 11. The insulating member 11 electrically insulates the vacuum vessel 2 from the antenna 3. Between the vacuum vessel 2 and the insulating member 11, a packing 111 is provided to provide a vacuum seal between the vacuum vessel 2 and the insulating member 11. Between the antenna 3 and the insulating member 11, a packing 111 is also provided to provide a vacuum seal between the antenna 3 and the insulating member 11.

[0017] The antenna 3 is an LC antenna having a conductor element 31, an insulating element 32, and a capacitive element 33. The conductor element 31 is, for example, a metal pipe formed into a tubular shape, and at least two are provided for one antenna 3. The insulating element 32 is provided between adjacent conductor elements 31, and electrically insulates the adjacent conductor elements 31 from each other. The insulating element 32 is, for example, an insulating pipe formed into a tubular shape, and covers the capacitive element 33. The capacitive element 33 is, for example, a capacitor, and is provided inside the insulating element 32. The conductor element 31 and the capacitive element 33 are electrically connected in series to each other inside the insulating element 32.

[0018] The material of the conductor element 31 is, for example, copper, aluminum, an alloy thereof, or SUS. The material of the insulating element 32 is, for example, ceramics such as alumina, quartz, fluororesin, polyethylene (PE), or engineering plastic. Examples of engineering plastics include polyphenylene sulfide (PPS) or polyether ether ketone (PEEK). The insulating element 32 is made of a single material, but is not limited thereto, and may be made of a plurality of materials.

[0019] By using an LC antenna as the antenna 3, a film can be formed uniformly on the workpiece W1 regardless of the size and processing conditions of the film forming apparatus 1, and a film can be formed on the workpiece W1 while efficiently synthesizing diamond.

[0020] The antenna 3 has a power feeding end 3A to which a high frequency voltage is applied, and a grounded end 3B which is electrically grounded. A high frequency voltage is applied to the power feeding end 3A from a high frequency power source 4 via a matching device 41. The matching device 41 is an electric circuit that matches the power from the high frequency power source 4 in accordance with the load. The frequency of the high frequency current flowing through the antenna 3 is, for example, 13.56 MHz or a multiple thereof.

[0021] As shown by reference numeral 201 in Fig. 2 described later, a plurality of antennas 3 may be arranged in the Y-axis direction. This allows the plasma P to be generated uniformly over a wider range, and allows more workpieces W1 to be treated. The number of antennas 3 is not limited to a plurality of antennas, and may be only one.

[0022] <Configuration of the insulating cover 10> The portion of the antenna 3 located inside the vacuum vessel 2 is covered with a tubular insulating cover 10. Both ends of the insulating cover 10 are supported by insulating members 11. The material of the insulating cover 10 is, for example, quartz, alumina, fluororesin, silicon nitride, silicon carbide, silicon, or the like.

[0023] By providing the insulating cover 10, it is possible to prevent the charged particles in the plasma P from being incident on the conductor element 31, thereby suppressing an increase in plasma potential caused by the charged particles being incident on the conductor element 31. It is also possible to prevent the conductor element 31 from being sputtered by the charged particles, causing metal contamination of the plasma P and the workpiece W1. The charged particles are mainly ions.

[0024] <Configurations of radiation suppression member 5, holder 8, and heater 81> Hereinafter, the radiation suppression member 5, the holder 8, the heater 81, etc. will be described with reference to FIG. 2 as well. FIG. 2 is a diagram showing the configuration around the antenna 3 in the film formation apparatus 1 shown in FIG. 1. The diagram indicated by reference numeral 201 in FIG. 2 is a cross-sectional view taken along line A0-A0 in FIG. 1. However, for ease of explanation, the gas supply mechanism 50 and the inlet 52 are shown in the diagram indicated by reference numeral 201 in FIG. 2. The diagram indicated by reference numeral 202 in FIG. 2 is a diagram showing the film formation apparatus 1 shown in FIG. 1 as viewed in the positive direction of the Z axis.

[0025] In the view of reference numeral 201 in Fig. 2, a part of the vacuum vessel 2, the high frequency power supply 4, the matching box 41, the vacuum exhaust device 6, the heater power supply 9, the insulating cover 10, and the bias power supply 12 are omitted. Similarly, in the views of reference numeral 701 in Fig. 4, Fig. 5, Fig. 6, and Fig. 7, the view of reference numeral 801 in Fig. 8, and the view of reference numeral 1101 in Fig. 9, Fig. 10, and Fig. 11, these configurations are omitted. In the view of reference numeral 202 in Fig. 2, the configurations shown in Fig. 1 are omitted except for the workpiece W1, the antenna 3, and the heater 81. In addition, the view of reference numeral 201 in Fig. 2 is a cross-sectional view taken along the line A1-A1 of the view of reference numeral 202 in Fig. 2, excluding the omitted configurations.

[0026] As indicated by reference numeral 201 in Fig. 2, the radiation suppression member 5 has radiation suppression plates 5A, 5B, and 5C, and is formed into a box shape by the radiation suppression plates 5A to 5C. The radiation suppression member 5 accommodates a heater 81 therein and suppresses radiation from the heater 81 to the vacuum vessel 2 and the antenna 3. The radiation suppression member 5 also blocks electromagnetic waves radiated from the heater 81. The radiation suppression member 5 is disposed so as to cover the heater 81. When the opening / closing unit 7 is closed, the radiation suppression plates 5A and 5C extend along the XY plane, and the multiple radiation suppression plates 5B extend along the YZ plane or the XZ plane.

[0027] The holder 8 is provided outside the radiation suppression member 5 and holds the workpiece W1. Specifically, the holder 8 is provided on the antenna 3 side of the radiation suppression plate 5A. The holder 8 is disposed between the antenna 3 and the radiation suppression plate 5A. The holder 8 holds the workpiece W1 such that a first end E1 of the workpiece W1 penetrating the radiation suppression plate 5A is disposed outside the radiation suppression member 5 and a second end E2 of the workpiece W1 opposite to the first end E1 is disposed inside the radiation suppression member 5.

[0028] The radiation suppression plates 5A to 5C and the holder 8 are made of a material such as an aluminum alloy, SUS, or a high-melting-point metal. Examples of the high-melting-point metal include Ta (tantalum), W (tungsten), and Mo (molybdenum). The holder 8 holds the multiple workpieces W1 such that the multiple workpieces W1 are aligned along the X-axis and Y-axis directions.

[0029] The heater 81 is an example of a heating section, and heats the workpiece W1. The workpiece W1 is heated by radiation from the heater 81. As indicated by reference numeral 202 in FIG. 2, the heater 81 is disposed so as to surround the plurality of workpieces W1. The heater 81 is also formed and disposed along the direction in which the plurality of workpieces W1 are arranged. The heater 81 is constituted by extension portions 81A to 81G, and is thus a single heater.

[0030] The extension portions 81A, 81C, 81E, and 81G extend along the X-axis direction. The plurality of workpieces W1 are disposed between the extension portions 81A and 81C, and also between the extension portions 81E and 81G. The extension portions 81B, 81D, and 81F extend in the Y-axis direction. The extension portion 81B is a portion that connects the extension portion 81A and the extension portion 81C, the extension portion 81D is a portion that connects the extension portion 81C and the extension portion 81E, and the extension portion 81F is a portion that connects the extension portion 81E and the extension portion 81G.

[0031] Furthermore, the holder 8 may hold the workpiece W1, which is formed in a rod shape, so that the workpiece W1 protrudes further than the heater 81 in the direction from the holder 8 toward the radiation suppression member 5. Specifically, the holder 8 may hold the workpiece W1 so that the second end E2 of the workpiece W1 is located at a position farther from the antenna 3 in the Z-axis direction than the position P1 of the part of the heater 81 farthest from the antenna 3 in the Z-axis direction.

[0032] In other words, the holder 8 may hold the workpiece W1 such that the second end E2 is located at a position farther from the antenna 3 in the Z-axis direction than the position P1 of the point farthest from the antenna 3 in the Z-axis direction in the region where the heater 81 is present. This allows the heater 81 to be located near a portion between both ends of the workpiece W1, thereby making it possible to heat the workpiece W1 more efficiently. Note that if the length of the workpiece W1 is shorter than a predetermined length, the workpiece W1 may not protrude beyond the heater 81.

[0033] <Structure of Holder 8> Fig. 3 is a diagram for explaining the structure of the holder 8 included in the film forming apparatus 1 shown in Fig. 1. As indicated by reference numeral 301 in Fig. 3, the holder 8 has a first portion 8A and a second portion 8B, and holds a plurality of workpieces W1 by sandwiching the workpieces W1 between the first portion 8A and the second portion 8B.

[0034] A recess is formed in each of the first portion 8A and the second portion 8B, and the workpiece W1 fits into the recess, allowing the holder 8 to firmly hold the workpiece W1. The bolt B1 passes through the first portion 8A and the second portion 8B, and the first portion 8A and the second portion 8B are fixed to each other by the bolt B1. The first portion 8A and the second portion 8B are not divided in the X-axis direction and are integrated.

[0035] Since the plurality of workpieces W1 are sandwiched between the first portion 8A and the second portion 8B and come into contact with the first portion 8A and the second portion 8B, a current flows through the plurality of workpieces W1 when the bias power supply 12 applies a bias voltage to the radiation suppression plate 5C. As shown by reference numeral 302 in Fig. 3, the holders 8 having the first portion 8A and the second portion 8B are arranged side by side in the Y-axis direction, so that many workpieces W1 can be placed thereon.

[0036] <Configuration of heater power supply 9 and bias power supply 12> 1, the heater power supply 9 is electrically connected to the heater 81. The heater power supply 9 can increase the temperature of the heater 81 by applying a voltage to the heater 81. The bias power supply 12 is electrically connected to the radiation suppression plate 5C. The bias power supply 12 can also apply a bias voltage to the radiation suppression plates 5A and 5B and the holder 8 by applying a bias voltage to the radiation suppression plate 5C.

[0037] The bias voltage applied by the bias power supply 12 to the radiation suppression plate 5C is, for example, a negative DC voltage. By applying the bias voltage to the radiation suppression plate 5C by the bias power supply 12, for example, it is possible to control the energy when the positive ions in the plasma P are incident on the workpiece W1, thereby controlling the crystallinity of the film formed on the surface of the workpiece W1. In addition, by applying the bias voltage to the radiation suppression plate 5C by the bias power supply 12, a current flows through the radiation suppression plates 5A to 5C, the holder 8, and the workpiece W1. The potentials of the radiation suppression plates 5A to 5C, the holder 8, and the workpiece W1 become the same potential.

[0038] <Configuration of opening / closing unit 7> The opening / closing unit 7 is provided on the outer wall 21 of the vacuum vessel 2 by a hinge 73, and is connected to the radiation suppression plate 5C by a shaft 72 that penetrates the opening / closing unit 7. The opening / closing unit 7 can open and close the inside of the vacuum vessel 2 while maintaining the relative positions of the heater 81, the radiation suppression member 5, and the holder 8. Therefore, by opening the opening / closing unit 7, the heater 81, the radiation suppression member 5, and the holder 8 can be pulled out to the outside of the vacuum vessel 2. Therefore, the workpiece W1 held by the holder 8 can be easily replaced. The opening / closing unit 7 can be opened and closed in an opening / closing direction DR1. Another set of opening / closing units 7 can be opened and closed in an opening / closing direction DR2.

[0039] In addition, since the holder 8 holds a plurality of workpieces W1 arranged in the longitudinal direction of the antenna 3, the workpieces W1 can be easily attached and detached by opening the opening / closing part 7, improving maintainability and enabling shortening of work time. Furthermore, since the gas supply mechanism 50 and the moving mechanism 71 are fixed to the opening / closing part 7, the opening / closing part 7 can open and close the inside of the vacuum vessel 2 while maintaining the relative positions with the gas supply mechanism 50 and the moving mechanism 71.

[0040] <Configuration of gas supply mechanism 50> The gas supply mechanism 50 supplies gas G, such as a raw material gas, to the inside of the radiation suppression member 5 through a pipe 51 that penetrates the opening / closing portion 7 and is provided in the radiation suppression plate 5C. The gas supply mechanism 50 supplies gas G to the inside of the radiation suppression member 5 in the negative direction of the Z axis from an inlet 52 formed in the radiation suppression plate 5C.

[0041] As a result, the space SP1 inside the radiation suppressing member 5, that is, the space SP1 between the heater 81 and the radiation suppressing member 5, is filled with gas G. The pressure inside the radiation suppressing member 5 also increases due to the gas G. At this time, in order to maintain the internal volume of the radiation suppressing member 5, molecular motion inside the radiation suppressing member 5 becomes active, and the temperature inside the radiation suppressing member 5 increases.

[0042] The gas G is, for example, a gas containing C (carbon), H (hydrogen) and O (oxygen), and specifically, H2 gas, CH4 gas or CO2 gas, but the present invention is not limited thereto. The film forming apparatus 1 may form a carbon film on the workpiece W1. The film forming apparatus 1 may form a diamond-like carbon (DLC) film as the carbon. The flow rate regulator (not shown) of the gas supply mechanism 50 is, for example, a valve that regulates the flow rate of the gas G supplied to the inside of the vacuum vessel 2.

[0043] As described above, the radiation suppression plate 5C of the radiation suppression member 5 has the inlet 52 for introducing the gas G from the outside of the vacuum vessel 2 into the inside of the radiation suppression member 5. This allows the gas G to be introduced into the inside of the radiation suppression member 5, and the workpiece W1 can be heated more efficiently by the heat transfer of the gas G.

[0044] Furthermore, the radiation suppression plate 5A of the radiation suppression member 5 is formed with a plurality of ejection ports 53 for ejecting the gas G introduced from the inlet 52 to the outside of the radiation suppression member 5. This causes the gas G to be ejected to the outside of the space SP1 between the heater 81 and the radiation suppression member 5. In other words, the gas G is ejected toward the antenna 3, and spreads into the space between the antenna 3 and the holder 8. Since the gas G can be ejected to the outside of the radiation suppression member 5, it is possible to introduce the gas G into the inside of the radiation suppression member 5, while introducing the gas G into the inside of the radiation suppression member 5, and also into the inside of the vacuum vessel 2 and outside of the radiation suppression member 5.

[0045] <Configuration of the moving mechanism 71> The movement mechanism 71 is connected to the radiation suppression plate 5C by a shaft 72 that penetrates the opening / closing part 7. The movement mechanism 71 moves the holder 8 so as to change the distance H1 between the antenna 3 and the holder 8 while maintaining the relative positions of the heater 81, the radiation suppression member 5, and the holder 8. The distance H1 is the distance along the Z-axis direction.

[0046] The moving mechanism 71 may include a linear guide connected to the shaft 72 so as to linearly move the shaft 72 in the direction D1. The direction D1 is the same direction as the Z-axis direction. The moving mechanism 71 linearly moves the shaft 72 in the direction D1, thereby moving the workpiece W1 in the direction D1 as well.

[0047] Since the distance H1 between the antenna 3 and the holder 8 can be changed, the relative position of the workpiece W1 held by the holder 8 with respect to the antenna 3 can be changed. Thus, films can be formed on workpieces W1 of various sizes. Specifically, since the distance H2 between the antenna 3 and the first end E1 of the workpiece W1 can be adjusted by the moving mechanism 71, it becomes possible to install workpieces W1 of different lengths.

[0048] As described above, in the film forming apparatus 1, the holder 8 is provided outside the radiation suppression member 5 that houses the heater 81, that is, the heater 81 is provided outside the holder 8. This allows the workpiece W1 to be efficiently heated by radiation from the heater 81 to the workpiece W1. In addition, since the radiation suppression member 5 houses the heater 81 inside, it is possible to suppress a rise in temperature in the portion of the vacuum vessel 2 close to the heater 81 and in the antenna 3.

[0049] Furthermore, since the radiation to the antenna 3 is suppressed by the radiation suppressing member 5, the temperature rise of the antenna 3 can be suppressed. This allows a wider range of material choices for the insulating element 32 included in the antenna 3. Furthermore, since the range of temperatures of the workpiece W1 can be widened when a film is formed on the workpiece W1, the range of types of workpieces W1 on which a film can be formed can also be widened. Therefore, a film can be formed on the workpiece W1 with the temperature of the workpiece W1 set to a desired temperature. Furthermore, a film can be formed stably on the workpiece W1 for a long period of time.

[0050] [Variation 1] 4 is a cross-sectional view showing a configuration of a film formation apparatus 1A according to Modification 1 of the present invention. As shown in FIG. 4, the film formation apparatus 1A is different from the film formation apparatus 1 in that the film formation apparatus 1A includes a plurality of overlapping radiation suppressing members 501, 502, and 503. Each of the radiation suppressing members 501 to 503 is the same member as the radiation suppressing member 5.

[0051] Similar to the radiation suppressing member 5, the radiation suppressing member 501 has radiation suppressing plates 5A1, 5B1, and 5C1, and is formed into a box shape by the radiation suppressing plates 5A1 to 5C1. The radiation suppressing member 501 houses the heater 81 inside. Similarly, the radiation suppressing member 502 has radiation suppressing plates 5A2, 5B2, and 5C2, and is formed into a box shape by the radiation suppressing plates 5A2 to 5C2. The radiation suppressing member 502 houses the radiation suppressing member 501 inside, and is disposed so as to overlap the radiation suppressing member 501 from the outside.

[0052] Similarly, radiation suppressing member 503 has radiation suppressing plates 5A3, 5B3, and 5C3, and is formed into a box shape by radiation suppressing members 5A3 to 5C3. Radiation suppressing member 503 accommodates radiation suppressing member 502 therein and is disposed so as to overlap radiation suppressing member 502 from the outside.

[0053] The gas supply mechanism 50 supplies gas G to the inside of the radiation suppression member 501 through a pipe 51 that penetrates the opening / closing unit 7 and the radiation suppression plates 5C2 and 5C3 and is provided in the radiation suppression plate 5C1. An inlet 52 for introducing gas G from the outside of the vacuum vessel 2 into the inside of the radiation suppression member 501 is formed in the radiation suppression plate 5C1.

[0054] Further, the radiation suppression plate 5A1 has an ejection port 531 formed therein, the radiation suppression plate 5A2 has an ejection port 532 formed therein, and the radiation suppression plate 5A3 has an ejection port 533 formed therein. The gas G introduced from the inlet 52 is ejected from the ejection ports 531, 532, and 533 to the outside of the radiation suppression member 503.

[0055] As described above, the film forming apparatus 1A is provided with the plurality of overlapping radiation suppressing members 501 to 503, and thus can further suppress temperature rise in the portion of the vacuum vessel 2 close to the heater 81 and in the antenna 3.

[0056] [Modification 2] 5 is a cross-sectional view showing a configuration of a film formation apparatus 1B according to Modification 2 of the present invention. As shown in FIG. 5, the film formation apparatus 1B is different from the film formation apparatus 1A in that a holder 8 is housed inside a radiation suppressing member 503.

[0057] The holder 8 is provided outside the radiation suppressing member 502 which accommodates the radiation suppressing member 501 therein. The radiation suppressing member 503 accommodates the holder 8 and the radiation suppressing member 502 therein. Thus, the holder 8 is disposed in the space SP2 between the radiation suppressing plates 5A2 and 5A3. The antenna 3 is disposed outside the radiation suppressing member 503. The radiation suppressing members 501 and 502 are an example of a first radiation suppressing member, and the radiation suppressing member 503 is an example of a second radiation suppressing member.

[0058] Since the holder 8 is housed inside the radiation suppressing member 503 and the antenna 3 is disposed outside the radiation suppressing member 503, it is possible to prevent the holder 8 from being exposed to the plasma P generated around the antenna 3. This makes it possible to suppress deterioration of the holder 8. In addition, a material with a lower melting point can be used for the holder 8, which allows for a wider range of choices for the material of the holder 8.

[0059] [Modification 3] 6 is a cross-sectional view showing a configuration of a film formation apparatus 1C according to Modification 3 of the present invention. As shown in FIG. 6, the film formation apparatus 1C is different from the film formation apparatus 1 in the arrangement of a gas supply mechanism 50 and pipes 51.

[0060] The piping 51 may pass through the moving mechanism 71 and be provided on the radiation suppression plate 5C via the inside of the shaft 72. This eliminates the need to pass the piping 51 through the opening / closing unit 7, as compared with the film forming apparatus 1, and therefore reduces the number of steps required to process the opening / closing unit 7. Therefore, the vacuum vessel 2 provided with the opening / closing unit 7 can be easily manufactured.

[0061] [Modification 4] FIG. 7 is a diagram showing the configuration of a film forming apparatus 1D according to a fourth modified example of the present invention. The diagram of reference numeral 701 in FIG. 7 is a cross-sectional view showing the configuration around the antenna 3 in the film forming apparatus 1D. The diagram of reference numeral 702 in FIG. 7 is a view of the film forming apparatus 1D viewed in the positive direction of the Z axis. In the diagram of reference numeral 702 in FIG. 7, the configuration of the film forming apparatus 1D other than the workpiece W1, the antenna 3, and the heater 811 is omitted. In addition, the diagram of reference numeral 701 in FIG. 7 is a cross-sectional view taken along the line A2-A2 of the diagram of reference numeral 702 in FIG. 7, excluding the omitted configuration.

[0062] 7, the film formation apparatus 1D differs from the film formation apparatus 1 in that it includes a heater 811 instead of the heater 81. When viewed in the negative direction of the X-axis, the shape of the heater 811 is shaped along the longitudinal direction of the workpiece W1 inside the radiation suppression member 5. When viewed in the negative direction of the X-axis, the heater 811 is disposed so as to surround the second end E2 of the workpiece W1.

[0063] Specifically, the heater 811 extends in the positive direction of the Z axis from a portion indicated by reference symbol 8P1, extends in the negative direction of the Y axis from a portion indicated by reference symbol 8P2, and extends in the negative direction of the Z axis from a portion indicated by reference symbol 8P3. As a result, when viewed in the negative direction of the X axis, the heater 811 is disposed so as to surround the second end E2 of the workpiece W1.

[0064] Moreover, the heater 811 extends in the negative Y-axis direction from a portion indicated by reference symbol 8P4, extends in the positive Z-axis direction from a portion indicated by reference symbol 8P5, extends in the negative Y-axis direction from a portion indicated by reference symbol 8P6, and extends in the negative Z-axis direction from a portion indicated by reference symbol 8P7. As a result, when viewed in the negative X-axis direction, the heater 811 is disposed so as to surround a second end E2 of another workpiece W1.

[0065] The heater 811 extends in the positive direction of the X-axis from the portion indicated by reference symbol 8P8. The shape of the heater 811 is the same as that of the other portion of the heater 811 indicated by reference symbol 702 in Fig. 7, and extends as described above. As described above, the heater 811 is disposed so as to surround the second end E2 of the workpiece W1, thereby making it possible to efficiently heat the workpiece W1.

[0066] [Modification 5] Fig. 8 is a diagram showing the configuration of a film forming apparatus 1E according to Modification 5 of the present invention. The diagram indicated by reference numeral 801 in Fig. 8 is a cross-sectional view showing the configuration around the antenna 3 in the film forming apparatus 1E. The diagram indicated by reference numeral 802 in Fig. 8 is a diagram showing a heater 812 as viewed in the positive direction of the Z axis. The diagram indicated by reference numeral 803 in Fig. 8 is a diagram showing a heater 813 as viewed in the positive direction of the Z axis.

[0067] 8, the configuration of the film forming apparatus 1E is omitted except for the workpiece W1, the antenna 3, and the heater 812. In the diagram of the reference numeral 803 in Fig. 8, the configuration of the film forming apparatus 1E is omitted except for the workpiece W1, the antenna 3, and the heater 813.

[0068] 8, the film formation apparatus 1E differs from the film formation apparatus 1 in that it includes multiple heaters 812, 813 provided inside the radiation suppressing member 5. The heaters 812, 813 are arranged side by side in the Z-axis direction. The heaters 812, 813 each have the same shape as the heater 81.

[0069] The heaters 812 and 813 are connected in series or in parallel to each other. Consider the case where the heaters 812 and 813 are connected in series to each other. In this case, a first end 813A of the heater 813, indicated by reference numeral 803 in FIG. 8, is electrically connected to the heater power supply 9. Also, a second end 813B of the heater 813, which is opposite to the first end 813A, is connected to a second end 812B of the heater 812, indicated by reference numeral 802 in FIG. Also, a first end 812A of the heater 812, which is opposite to the second end 812B, is electrically connected to the heater power supply 9.

[0070] By providing the film forming apparatus 1E with the multiple heaters 812, 813, it is possible to heat a wide range of the workpiece W1, and therefore it is possible to increase the temperature of the workpiece W1 more efficiently. When the heaters 812, 813 are connected in parallel with each other, the heater power supply 9 may independently control the heaters 812, 813. This makes it possible to optimize the temperature distribution inside the radiation suppression member 5 and the temperature distribution of the workpiece W1.

[0071] [Modification 6] Fig. 9 is a diagram showing a configuration of a film formation apparatus 1F according to Modification 6 of the present invention. As shown in Fig. 9, the film formation apparatus 1F differs from the film formation apparatus 1 in that it includes a plurality of units aligned in the Y-axis direction.

[0072] If a unit is made up of the radiation suppression member 5, the gas supply mechanism 50, the piping 51, the opening / closing unit 7, the moving mechanism 71, the shaft 72, the holder 8, and the heater 81, the film forming apparatus 1F includes a plurality of units U1 to U4. The units U1 to U4 have the same configuration. The film forming apparatus 1 includes two sets of units U1 and U2.

[0073] In addition to the units U1 and U2, the film forming apparatus 1F further includes a unit U3 arranged in the Y-axis direction relative to the unit U1, and a unit U4 arranged in the Y-axis direction relative to the unit U2. This allows the film forming apparatus 1F to efficiently form films on a larger number of workpieces W1. Furthermore, the film forming apparatus 1F can form films on twice as many workpieces W1 at once as the film forming apparatus 1.

[0074] [Modification 7] Fig. 10 is a diagram showing the configuration of a film formation apparatus 1G according to a seventh modified example of the present invention. As shown in Fig. 10, the film formation apparatus 1G differs from the film formation apparatus 1 in that it includes a plurality of heaters 81 arranged in the Y-axis direction inside the radiation suppression member 5. In the film formation apparatus 1G, a plurality of holders 8 are provided corresponding to the plurality of heaters 81 arranged in the Y-axis direction, and workpieces W1 are placed thereon. Thus, in the film formation apparatus 1G, it is possible to increase the number of workpieces W1 on which a film can be formed at one time, compared to the film formation apparatus 1.

[0075] [Variation 8] Fig. 11 is a diagram showing the configuration of a film formation apparatus 1H according to Modification 8 of the present invention. The diagram indicated by reference numeral 1101 in Fig. 11 is a cross-sectional view showing the configuration around the antenna 3 in the film formation apparatus 1H. The diagram indicated by reference numeral 1102 in Fig. 11 is a diagram showing the film formation apparatus 1H as viewed in the positive direction of the Z axis. In the diagram indicated by reference numeral 1102 in Fig. 11, the configuration of the film formation apparatus 1H is omitted except for the workpieces W1 and W2, the antenna 3, the radiation suppression plate 5A, the holders 8 and 8C, and the bolt B1.

[0076] As indicated by reference numeral 1101 in Fig. 11, the film forming apparatus 1H differs from the film forming apparatus 1 in that it includes a holder 8C that holds a workpiece W2 having a diameter different from that of the workpiece W1. The holder 8 holds the workpiece W1, and the holder 8C holds the workpiece W2. As indicated by reference numeral 1102 in Fig. 11, the holder 8C has a first portion 8D and a second portion 8E, and holds the multiple workpieces W2 by sandwiching the multiple workpieces W2 between the first portion 8D and the second portion 8E.

[0077] A recess is formed in each of the first portion 8D and the second portion 8E, and the workpiece W2 fits into the recess, allowing the holder 8C to firmly hold the workpiece W2. The sizes of the recesses formed in the first portion 8A and the second portion 8B are different from the sizes of the recesses formed in the first portion 8D and the second portion 8E. This allows the workpieces W1 and W2 with different diameters to be placed thereon.

[0078] The bolt B1 passes through the first portion 8D and the second portion 8E, and the first portion 8D and the second portion 8E are fixed to each other by the bolt B1. The first portion 8D and the second portion 8E are not divided in the X-axis direction and are integrated.

[0079] By providing the film forming apparatus 1H with the holders 8 and 8C, the workpieces W1 and W2 having different diameters can be placed simultaneously in one film forming apparatus 1H, and the processing capacity of the film forming apparatus 1H can be improved.

[0080] 〔summary〕 The film forming apparatus according to aspect 1 of the present invention is a film forming apparatus for forming a film on a workpiece, and is configured to include a vacuum container that houses the workpiece, an antenna for generating plasma inside the vacuum container, a heating unit that heats the workpiece, a radiation suppression member that houses the heating unit and suppresses radiation from the heating unit to the vacuum container and the antenna, and a holder that is provided outside the radiation suppression member and holds the workpiece.

[0081] A film forming apparatus according to a second aspect of the present invention may be configured in such a way that, in the first aspect described above, the radiation suppressing member has an inlet formed therein for introducing a gas from outside the vacuum vessel.

[0082] A film forming apparatus according to a third aspect of the present invention may be configured in such a way that, in the second aspect described above, the radiation suppression member is provided with an outlet for ejecting gas introduced from the inlet to the outside of the radiation suppression member.

[0083] The film forming apparatus according to aspect 4 of the present invention may be configured in any one of aspects 1 to 3 above, further comprising a moving mechanism that moves the holder so as to change the distance between the antenna and the holder while maintaining the relative positions of the heating unit, the radiation suppression member, and the holder.

[0084] The film forming apparatus according to aspect 5 of the present invention may be configured in any one of aspects 1 to 4 above, further comprising an opening / closing unit provided on an outer wall of the vacuum vessel and connected to the radiation suppression member, the opening / closing unit being capable of opening and closing the inside of the vacuum vessel while maintaining the relative positions of the heating unit, the radiation suppression member, and the holder.

[0085] A film forming apparatus according to a sixth aspect of the present invention may be configured in any one of the first to fifth aspects above, so that the radiation suppression member includes a first radiation suppression member and a second radiation suppression member, the holder is provided outside the first radiation suppression member which houses the heating section therein, the second radiation suppression member houses the holder and the first radiation suppression member therein, and the antenna is disposed outside the second radiation suppression member.

[0086] A film forming apparatus according to a seventh aspect of the present invention is any one of the first to sixth aspects, wherein the antenna has at least two conductor elements and an insulating element that provides insulation between adjacent conductor elements.

[0087] A film forming apparatus according to an eighth aspect of the present invention may be configured in any one of the first to seventh aspects above so that the holder holds the workpiece such that the workpiece, which is formed in a rod shape, protrudes beyond the heating portion in a direction from the holder toward the radiation suppression member.

[0088] A ninth aspect of the present invention relates to a film formation apparatus according to any one of the first to eighth aspects, and may be configured such that the frequency of the high-frequency current flowing through the antenna is 13.56 MHz or a multiple thereof.

[0089] The film forming apparatus according to a tenth aspect of the present invention may be configured in any one of the first to ninth aspects to form a carbon film on the workpiece.

[0090] The present invention is not limited to the above-described embodiments, and various modifications are possible within the scope of the claims. Configurations obtained by appropriately combining multiple technical means disclosed in the embodiments are also included in the technical scope of the present invention. [Explanation of symbols]

[0091] 1, 1A~1H film deposition equipment 2 Vacuum container 3 Antennas 5 Radiation suppression materials 501, 502 Radiation suppression member (first radiation suppression member) 503 Radiation suppression member (second radiation suppression member) 7 Opening and closing section 8. 8C Holder 31 Conductor elements 32 Insulating elements 52 Introduction 53, 531, 532, 533 spout 71 Moving mechanism 81, 811, 812, 813 Heater (heating part) H1 Distance between antenna and holder W1, W2 Processing object

Claims

1. A film forming apparatus for forming a film on a workpiece, a vacuum vessel for accommodating the object to be treated therein; an antenna for generating plasma inside the vacuum vessel; A heating unit that heats the object to be processed; a radiation suppressing member that accommodates the heating unit therein and suppresses radiation from the heating unit to the vacuum vessel and the antenna; a holder provided outside the radiation suppression member for holding the object to be processed.

2. 2. The film forming apparatus according to claim 1, wherein the radiation suppressing member has an inlet formed therein for introducing a gas from outside the vacuum vessel into the radiation suppressing member.

3. 3. The film forming apparatus according to claim 2, wherein the radiation suppressing member is provided with an ejection port for ejecting the gas introduced from the inlet to the outside of the radiation suppressing member.

4. The film forming apparatus according to any one of claims 1 to 3, further comprising a moving mechanism that moves the holder so as to change the distance between the antenna and the holder while maintaining the relative positions of the heating unit, the radiation suppression member, and the holder.

5. 4. The film forming apparatus according to claim 1, further comprising an opening / closing unit provided on an outer wall of the vacuum container and connected to the radiation suppression member, the opening / closing unit being capable of opening and closing the inside of the vacuum container while maintaining the relative positions of the heating unit, the radiation suppression member, and the holder.

6. The radiation suppressing member includes a first radiation suppressing member and a second radiation suppressing member, the holder is provided outside the first radiation suppressing member that houses the heating unit therein, the second radiation suppressing member accommodates the holder and the first radiation suppressing member therein, 4. The film forming apparatus according to claim 1, wherein the antenna is disposed outside the second radiation suppressing member.

7. 4. The film deposition apparatus according to claim 1, wherein the antenna has at least two conductor elements and an insulating element that provides insulation between adjacent conductor elements.

8. 4. The film forming apparatus according to claim 1, wherein the holder holds the workpiece such that the workpiece, which is formed in a rod shape, protrudes beyond the heating portion in a direction from the holder toward the radiation suppression member.

9. 4. The film forming apparatus according to claim 1, wherein the frequency of the high frequency current flowing through the antenna is 13.56 MHz or a multiple thereof.

10. 4. The film forming apparatus according to claim 1, wherein a carbon film is formed on the object to be processed.

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