Film deposition apparatus

Abstract

To provide a film deposition apparatus that supplies a plurality of process gases stably at the same time.SOLUTION: A film deposition apparatus capable of supplying a first raw material gas, a second raw material gas, and a reaction gas into a treatment vessel includes: a gas supply timing adjustment mechanism capable of supplying the first raw material gas and the second raw material gas into the treatment vessel at the same time; and a controller for controlling the gas supply timing adjustment mechanism.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a film forming apparatus. [Background technology]

[0002] Patent Document 1 discloses a method for manufacturing a semiconductor device, which includes a step of forming a film containing the metal element, the other element, and nitrogen on a substrate by performing a predetermined number of non-simultaneous cycles of: a first step of supplying a first source gas containing a metal element and a halogen element and a second source gas containing an element other than the metal element and hydrogen to the substrate while evacuating a space in which the substrate exists, such that at least a part of the supply periods of the first source gas and the second source gas containing hydrogen overlap; a removal step of removing the first source gas, the second source gas, and by-products generated in the first step from the space in which the substrate exists after the first step; and a second step of supplying a reaction gas containing nitrogen to the substrate while evacuating the space in which the substrate exists after the removal step.

[0003] Patent Document 2 discloses a film formation method for forming a metal-containing nitride film containing silicon, the film formation method comprising the steps of supplying a metal-containing gas into a processing vessel containing a substrate, supplying a silicon-containing gas into the processing vessel, and supplying a nitrogen-containing gas into the processing vessel, in which the steps of supplying the metal-containing gas and the step of supplying the silicon-containing gas are carried out in this order n times (n is an integer of 1 or more), and then the step of supplying the nitrogen-containing gas is repeated in this order m times (m is an integer of 1 or more). [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2020-74367 A [Patent Document 2] Patent Publication No. 2021-31686 Summary of the Invention [Problem to be solved by the invention]

[0005] In one aspect, the present disclosure provides a film forming apparatus that stably supplies a plurality of process gases simultaneously. [Means for solving the problem]

[0006] In order to solve the above problem, according to one aspect, there is provided a film formation apparatus capable of supplying a first precursor gas, a second precursor gas, and a reactive gas to a processing vessel, the film formation apparatus comprising: a gas supply timing adjustment mechanism that can simultaneously supply the first precursor gas and the second precursor gas to the processing vessel; and a control unit that controls the gas supply timing adjustment mechanism. Effect of the Invention

[0007] According to one aspect, it is possible to provide a film forming apparatus that stably supplies a plurality of process gases simultaneously. [Brief description of the drawings]

[0008] [Figure 1] 1 is a cross-sectional view illustrating an example of a configuration of a film forming apparatus according to a first embodiment. [Diagram 2] 4 is a flowchart showing an example of a method for forming a TiSiN film according to an embodiment. [Diagram 3] 4 is a time chart showing an example of gas supply timing in a film forming method according to an embodiment. [Figure 4] FIG. 2 is a diagram illustrating an example of a configuration of a gas supply timing adjustment mechanism included in the film formation apparatus according to the first embodiment. [Diagram 5] FIG. 4 is a diagram illustrating an example of a configuration of a gas supply timing adjustment mechanism included in a film forming apparatus according to a reference example. [Figure 6] 5 is a time chart showing an example of gas supply timing in a film forming method according to a reference example. [Figure 7] FIG. 11 is a diagram illustrating an example of a configuration of a gas supply timing adjustment mechanism included in a film formation apparatus according to a second embodiment. [Figure 8]FIG. 11 is a diagram illustrating an example of a configuration of a gas supply timing adjustment mechanism included in a film formation apparatus according to a third embodiment. [Figure 9] FIG. 13 is a diagram illustrating an example of a configuration of a gas supply timing adjustment mechanism included in the film formation apparatus according to the fourth embodiment. [Figure 10] 13 is a time chart showing an example of gas supply timing in a film formation method of the film formation apparatus according to the fourth embodiment. [Figure 11] 13 is a schematic cross-sectional view showing an example of a film formed on a substrate in another film formation method using the film formation apparatus according to the fourth embodiment. FIG. [Figure 12] FIG. 13 is a diagram illustrating an example of a configuration of a gas supply timing adjustment mechanism included in a film formation apparatus according to a fifth embodiment. [Figure 13] FIG. 13 is a diagram illustrating an example of a configuration of a gas supply timing adjustment mechanism included in a film formation apparatus according to a sixth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0010] An example of a film forming apparatus according to the first embodiment will be described with reference to Fig. 1. Fig. 1 is an example of a cross-sectional view showing the configuration of the film forming apparatus according to the first embodiment.

[0011] Here, the film formation apparatus is a film formation apparatus that supplies a plurality of process gases into a processing vessel 1 and performs a film formation process on a substrate W by an atomic layer deposition (ALD) method. In the following description, a case in which a first source gas (first process gas), a second source gas (second process gas), and a reactive gas (third process gas) are used as the process gases will be described as an example.

[0012] The first source gas is a gas containing a first element. The first source gas is, for example, a metal-containing gas containing a metal element. The first source gas is, for example, a Ti-containing gas containing titanium (Ti). However, the first source gas is not limited thereto.

[0013] The second source gas is a gas containing a second element different from the first element. The second source gas is, for example, a Si-containing gas containing silicon element (Si). However, the second source gas is not limited to this.

[0014] The reactive gas is, for example, a gas that reacts with the first raw material gas and / or the second raw material gas. The reactive gas is, for example, a nitrogen-containing gas (nitriding gas) that contains nitrogen element (N) and nitrides the first raw material gas and / or the second raw material gas. Note that the reactive gas is not limited to this. The reactive gas may be, for example, an oxygen-containing gas (oxidizing gas) that contains oxygen element (O) and oxidizes the first raw material gas and / or the second raw material gas.

[0015] In the following description, an example will be described in which the first source gas is TiCl4 gas, the second source gas is SiH4 gas, the reactive gas is NH3 gas, and the film forming apparatus forms a TiSiN film.

[0016] The film forming apparatus includes a processing chamber 1, a mounting table 2, a shower head 3, an exhaust unit 4, a gas supply mechanism 5, and a control unit 6.

[0017] The processing vessel 1 is made of a metal such as aluminum and has a substantially cylindrical shape. The processing vessel 1 accommodates a substrate W such as a wafer to be processed. A side wall of the processing vessel 1 is formed with a loading / unloading port 11 for loading / unloading the substrate W, and the loading / unloading port 11 is opened and closed by a gate valve 12. An annular exhaust duct 13 having a rectangular cross section is provided on the main body of the processing vessel 1. A slit 13a is formed along the inner peripheral surface of the exhaust duct 13. An exhaust port 13b is formed on the outer wall of the exhaust duct 13. A ceiling wall 14 is provided on the upper surface of the exhaust duct 13 so as to close the upper opening of the processing vessel 1. The gap between the exhaust duct 13 and the ceiling wall 14 is airtightly sealed by a seal ring 15.

[0018] The mounting table 2 horizontally supports the substrate W in the processing chamber 1. The mounting table 2 is formed in a disk shape with a size corresponding to the substrate W. The mounting table 2 is made of a ceramic material such as aluminum nitride (AlN) or a metal material such as an aluminum or nickel alloy. A heater 21 for heating the substrate W is embedded inside the mounting table 2. The heater 21 generates heat when powered by a heater power supply (not shown). The output of the heater 21 is controlled by a temperature signal from a thermocouple (not shown) provided near the upper surface of the mounting table 2, thereby controlling the substrate W to a predetermined temperature. The mounting table 2 is provided with a cover member 22 made of ceramics such as alumina so as to cover the outer circumferential region of the upper surface and the side surfaces.

[0019] A support member 23 for supporting the mounting table 2 is provided on the bottom surface of the mounting table 2. The support member 23 extends from the center of the bottom surface of the mounting table 2 through a hole formed in the bottom wall of the processing vessel 1 to below the processing vessel 1, and its lower end is connected to a lifting mechanism 24. The lifting mechanism 24 raises and lowers the mounting table 2 via the support member 23 between a processing position shown in FIG. 1 and a transfer position shown by a two-dot chain line below the processing position where the substrate W can be transferred. A flange 25 is attached to the support member 23 below the processing vessel 1. A bellows 26 is provided between the bottom surface of the processing vessel 1 and the flange 25, which separates the atmosphere inside the processing vessel 1 from the outside air and expands and contracts with the lifting and lowering operation of the mounting table 2.

[0020] Three substrate support pins 27 (only two shown) are provided near the bottom surface of the processing vessel 1 so as to protrude upward from a lifting plate 27a. The substrate support pins 27 are raised and lowered via the lifting plate 27a by a lifting mechanism 28 provided below the processing vessel 1. The substrate support pins 27 are inserted into through holes 2a provided in the mounting table 2 at the transfer position, and can be protruded and retracted from the upper surface of the mounting table 2. The substrate W is transferred between the transfer mechanism (not shown) and the mounting table 2 by raising and lowering the substrate support pins 27.

[0021] The shower head 3 supplies a processing gas into the processing vessel 1 in a shower-like manner. The shower head 3 is made of metal, is provided to face the mounting table 2, and has approximately the same diameter as the mounting table 2. The shower head 3 has a plate support 31 fixed to the ceiling wall 14 of the processing vessel 1, and a shower plate 32 connected below the plate support 31. A gas diffusion space 33 is formed between the plate support 31 and the shower plate 32, and gas introduction holes 36, 37 are provided in the gas diffusion space 33 so as to penetrate the center of the ceiling wall 14 of the processing vessel 1 and the plate support 31. An annular protrusion 34 protruding downward is formed on the periphery of the shower plate 32. A gas discharge hole 35 is formed on the inner flat surface of the annular protrusion 34. When the mounting table 2 is in the processing position, a processing space 38 is formed between the mounting table 2 and the shower plate 32, and the upper surface of the cover member 22 and the annular protrusion 34 are close to each other to form an annular gap 39.

[0022] The exhaust unit 4 exhausts the inside of the processing vessel 1. The exhaust unit 4 has an exhaust pipe 41 connected to the exhaust port 13b, and an exhaust mechanism 42 having a vacuum pump, a pressure control valve, etc. connected to the exhaust pipe 41. During processing, gas inside the processing vessel 1 reaches the exhaust duct 13 through the slit 13a, and is exhausted by the exhaust mechanism 42 from the exhaust duct 13 through the exhaust pipe 41.

[0023] The gas supply mechanism 5 supplies a process gas into the process chamber 1. The gas supply mechanism 5 includes a first source gas supply source 51a, an N2 gas supply source 52a, an N2 gas supply source 53a, a second source gas supply source 54a, an N2 gas supply source 55a, an N2 gas supply source 56a, a reactive gas supply source 57a, an N2 gas supply source 58a, and an N2 gas supply source 59a.

[0024] The first source gas supply source 51a supplies TiCl4 gas, which is an example of a first source gas (first process gas, metal-containing gas, Ti-containing gas), into the processing vessel 1 through the gas supply line 51b. A flow rate controller 51c, a storage tank 51d, and a valve 51e are provided in the gas supply line 51b from the upstream side. The downstream side of the valve 51e of the gas supply line 51b is connected to the gas inlet 37 through the gas supply line 51b. The TiCl4 gas supplied from the first source gas supply source 51a is temporarily stored in the storage tank 51d before being supplied into the processing vessel 1, and is then boosted to a predetermined pressure in the storage tank 51d before being supplied into the processing vessel 1. The supply and stop of the TiCl4 gas from the storage tank 51d to the processing vessel 1 is performed by the valve 51e. By temporarily storing the TiCl4 gas in the storage tank 51d in this manner, the TiCl4 gas can be stably supplied into the processing vessel 1 at a relatively large flow rate.

[0025] The N2 gas supply source 52a supplies N2 gas, which is an example of a purge gas, into the processing vessel 1 through the gas supply line 52b. A flow rate controller 52c, a storage tank 52d, and a valve 52e are provided in the gas supply line 52b from the upstream side. The downstream side of the valve 52e of the gas supply line 52b is connected to the gas supply line 51b. The N2 gas supplied from the N2 gas supply source 52a is temporarily stored in the storage tank 52d before being supplied into the processing vessel 1, and is then boosted to a predetermined pressure in the storage tank 52d before being supplied into the processing vessel 1. The supply and stop of the N2 gas from the storage tank 52d to the processing vessel 1 is performed by the valve 52e. By temporarily storing the N2 gas in the storage tank 52d in this manner, the N2 gas can be stably supplied into the processing vessel 1 at a relatively large flow rate.

[0026] The N2 gas supply source 53a supplies N2 gas, which is an example of a carrier gas, into the processing vessel 1 through the gas supply line 53b. A flow rate controller 53c, a valve 53e, and an orifice 53f are provided in the gas supply line 53b from the upstream side. The downstream side of the orifice 53f of the gas supply line 53b is connected to the gas supply line 51b. The N2 gas supplied from the N2 gas supply source 53a is continuously supplied into the processing vessel 1 during film formation on the substrate W. The supply and stop of the N2 gas from the N2 gas supply source 53a to the processing vessel 1 is performed by the valve 53e. The orifice 53f prevents the gas, which is supplied at a relatively large flow rate from the storage tanks 51d and 52d to the gas supply lines 51b and 52b, from flowing back into the gas supply line 53b.

[0027] The second source gas supply source 54a supplies SiH4 gas, which is an example of a second source gas (second process gas, Si-containing gas), into the processing vessel 1 through the gas supply line 54b. A flow rate controller 54c, a storage tank 54d, and a valve 54e are provided in the gas supply line 54b from the upstream side. The downstream side of the valve 54e of the gas supply line 54b is connected to the gas supply line 51b through the gas supply line 54b. The SiH4 gas supplied from the second source gas supply source 54a is temporarily stored in the storage tank 54d before being supplied into the processing vessel 1, and is then boosted to a predetermined pressure in the storage tank 54d before being supplied into the processing vessel 1. The supply and stop of the SiH4 gas from the storage tank 54d to the processing vessel 1 is performed by the valve 54e. By temporarily storing the SiH4 gas in the storage tank 54d in this manner, the SiH4 gas can be stably supplied into the processing vessel 1 at a relatively large flow rate.

[0028] The N2 gas supply source 55a supplies N2 gas, which is an example of a purge gas, into the processing vessel 1 through the gas supply line 55b. A flow rate controller 55c, a storage tank 55d, and a valve 55e are provided in the gas supply line 55b from the upstream side. The downstream side of the valve 55e of the gas supply line 55b is connected to the gas supply line 51b through the gas supply line 55b. The N2 gas supplied from the N2 gas supply source 55a is temporarily stored in the storage tank 55d before being supplied into the processing vessel 1, and is then boosted to a predetermined pressure in the storage tank 55d before being supplied into the processing vessel 1. The supply and stop of the N2 gas from the storage tank 55d to the processing vessel 1 is performed by the valve 55e. By temporarily storing the N2 gas in the storage tank 55d in this manner, the N2 gas can be stably supplied into the processing vessel 1 at a relatively large flow rate.

[0029] The N2 gas supply source 56a supplies N2 gas, which is an example of a carrier gas, into the processing vessel 1 through a gas supply line 56b. A flow rate controller 56c, a valve 56e, and an orifice 56f are provided in the gas supply line 56b from the upstream side. The downstream side of the orifice 56f of the gas supply line 56b is connected to the gas supply line 51b. The N2 gas supplied from the N2 gas supply source 56a is continuously supplied into the processing vessel 1 during film formation on the substrate W. The supply and stop of the N2 gas from the N2 gas supply source 56a to the processing vessel 1 is performed by the valve 56e. The orifice 56f prevents the gas at a relatively large flow rate supplied to the gas supply lines 54b and 55b by the storage tanks 54d and 55d from flowing back into the gas supply line 56b.

[0030] The reactive gas supply source 57a supplies NH3 gas, which is an example of a reactive gas (third process gas, nitrogen-containing gas), into the processing vessel 1 through the gas supply line 57b. A flow rate controller 57c, a storage tank 57d, and a valve 57e are provided in the gas supply line 57b from the upstream side. The downstream side of the valve 57e of the gas supply line 57b is connected to the gas inlet 36 through the gas supply line 57b. The NH3 gas supplied from the reactive gas supply source 57a is temporarily stored in the storage tank 57d before being supplied into the processing vessel 1, and is then boosted to a predetermined pressure in the storage tank 57d before being supplied into the processing vessel 1. The supply and stop of the NH3 gas from the storage tank 57d to the processing vessel 1 is performed by the valve 57e. By temporarily storing the NH3 gas in the storage tank 57d in this manner, the NH3 gas can be stably supplied into the processing vessel 1 at a relatively large flow rate.

[0031] The N2 gas supply source 58a supplies N2 gas, which is an example of a purge gas, into the processing vessel 1 through a gas supply line 58b. A flow rate controller 58c, a storage tank 58d, and a valve 58e are provided in the gas supply line 58b from the upstream side. The downstream side of the valve 58e of the gas supply line 58b is connected to the gas supply line 57b through the gas supply line 58b. The N2 gas supplied from the N2 gas supply source 58a is temporarily stored in the storage tank 58d before being supplied into the processing vessel 1, and is then pressurized to a predetermined pressure in the storage tank 58d before being supplied into the processing vessel 1. The supply and stop of the N2 gas from the storage tank 58d to the processing vessel 1 is performed by the valve 58e. By temporarily storing the N2 gas in the storage tank 58d in this manner, the N2 gas can be stably supplied into the processing vessel 1 at a relatively large flow rate.

[0032] The N2 gas supply source 59a supplies N2 gas, which is an example of a carrier gas, into the processing vessel 1 through a gas supply line 59b. A flow rate controller 59c, a valve 59e, and an orifice 59f are provided in the gas supply line 59b from the upstream side. The downstream side of the orifice 59f of the gas supply line 59b is connected to a gas supply line 57b. The N2 gas supplied from the N2 gas supply source 59a is continuously supplied into the processing vessel 1 during film formation on the substrate W. The supply and stop of the N2 gas from the N2 gas supply source 59a to the processing vessel 1 is performed by the valve 59e. The orifice 59f prevents a relatively large flow rate of gas supplied to the gas supply lines 57b and 58b by the storage tanks 57d and 58d from flowing back into the gas supply line 59b.

[0033] The control unit 6 is, for example, a computer, and includes a CPU (Central Processing Unit), a RAM (Random Access Memory), a ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of the film forming apparatus. The control unit 6 may be provided inside the film forming apparatus, or may be provided outside the film forming apparatus. When the control unit 6 is provided outside the film forming apparatus, the control unit 6 can control the film forming apparatus by a communication means such as a wired or wireless communication means.

[0034] Next, an example of a film forming method according to an embodiment will be described with reference to Fig. 2 and Fig. 3. Fig. 2 is a flow chart showing an example of a film forming method for a TiSiN film according to an embodiment. Fig. 3 is a time chart showing an example of gas supply timing in the film forming method according to an embodiment.

[0035] In step S101, a substrate W is prepared.

[0036] First, with the valves 51e to 59e closed, the gate valve 12 is opened and the transfer mechanism (not shown) transfers the substrate W into the processing vessel 1 and places it on the mounting table 2 at the transfer position. After the transfer mechanism is retracted from the processing vessel 1, the gate valve 12 is closed.

[0037] The control unit 6 controls the heater 21 of the mounting table 2 to heat the substrate W to a given temperature (for example, any temperature in the range of 300° C. to 700° C.). The control unit 6 also controls the lifting mechanism 24 to raise the mounting table 2 to a processing position to form a processing space 38. The control unit 6 also controls the pressure control valve of the exhaust mechanism 42 to adjust the pressure inside the processing chamber 1 to a given pressure (for example, 100 Pa to 3000 Pa (0.75 torr to 22.5 torr)).

[0038] Next, the control unit 6 opens the valves 53e, 56e, and 59e, thereby supplying a predetermined flow rate of carrier gas (N2 gas) from the N2 gas supply sources 53a, 56a, and 59a through the gas supply lines 53b, 56b, and 59b, respectively, into the processing chamber 1 via the gas supply lines 51b and 57b.

[0039] Also, TiCl4 gas, SiH4 gas, and NH3 gas are supplied to gas supply lines 51b, 54b, and 57b from the first raw material gas supply source 51a, the second raw material gas supply source 54a, and the reactive gas supply source 57a, respectively. At this time, since the valves 51e, 54e, and 57e are closed, the TiCl4 gas, SiH4 gas, and NH3 gas are stored in the storage tanks 51d, 54d, and 57d, respectively, and the pressures in the storage tanks 51d, 54d, and 57d are increased.

[0040] In step S102, TiCl4 gas (first source gas) and SiH4 gas (second source gas) are supplied to the processing vessel 1. Here, the control unit 6 simultaneously opens the valves 51e and 54e using the gas supply timing adjustment mechanism 7 (see FIG. 4) described later, and simultaneously supplies the TiCl4 gas and the SiH4 gas to the processing vessel 1. As a result, the TiCl4 gas stored in the storage tank 51d and the SiH4 gas stored in the storage tank 54d are simultaneously supplied into the processing vessel 1, and the first source gas and the second source gas are adsorbed onto the substrate W.

[0041] In parallel with the supply of TiCl4 gas and SiH4 gas into the processing vessel 1, a purge gas (N2 gas) is supplied from the N2 gas supply sources 52a, 55a, 58a to the gas supply lines 52b, 55b, 58b. At this time, since the valves 52e, 55e, 58e are closed, the purge gas is stored in the storage tanks 52d, 55d, 58d, and the pressures in the storage tanks 52d, 55d, 58d are increased.

[0042] After a predetermined processing time (for example, 0.01 to 5 seconds) has elapsed since valves 51e and 54e were opened, control unit 6 closes valves 51e and 54e.

[0043] In step S103, the purge gas is supplied to the processing vessel 1 to purge the gas in the processing vessel 1. Here, the control unit 6 opens the valves 52e, 55e, and 58e. As a result, the purge gas stored in the storage tanks 52d, 55d, and 58d, respectively, is supplied into the processing vessel 1. At this time, since the purge gas is supplied from the storage tanks 52d, 55d, and 58d in a state in which the pressure is increased, the purge gas is supplied into the processing vessel 1 at a relatively large flow rate, for example, a flow rate larger than the flow rate of the carrier gas. Therefore, the TiCl4 gas and SiH4 gas remaining in the processing vessel 1 are quickly exhausted to the exhaust pipe 41, and the atmosphere in the processing vessel 1 is replaced from the TiCl4 gas and SiH4 gas atmosphere to the N2 gas atmosphere in a short time.

[0044] In addition, by closing the valve 51e, the TiCl4 gas supplied from the first source gas supply source 51a to the gas supply line 51b is stored in the storage tank 51d, and the pressure in the storage tank 51d is increased. In addition, by closing the valve 54e, the SiH4 gas supplied from the second source gas supply source 54a to the gas supply line 54b is stored in the storage tank 54d, and the pressure in the storage tank 54d is increased.

[0045] After a predetermined processing time (for example, 0.01 to 5 seconds) has elapsed since the valves 52e, 55e, and 58e were opened, the control unit 6 closes the valves 52e, 55e, and 58e.

[0046] In step S104, NH3 gas (reactive gas) is supplied to the processing vessel 1. Here, the control unit 6 opens the valve 57e. As a result, the NH3 gas stored in the storage tank 57d is supplied into the processing vessel 1, and the first source gas (TiCl4) and the second source gas (SiH4) adsorbed on the substrate W react with the reactive gas (NH3), forming a TiSiN film.

[0047] In parallel with the supply of NH3 gas into the processing vessel 1, purge gas (N2 gas) is supplied from the N2 gas supply sources 52a, 55a, 58a to the gas supply lines 52b, 55b, 58b. At this time, since the valves 52e, 55e, 58e are closed, the purge gas is stored in the storage tanks 52d, 55d, 58d, and the pressures in the storage tanks 52d, 55d, 58d are increased.

[0048] After a predetermined processing time (for example, 0.01 to 5 seconds) has elapsed since valve 57e was opened, control unit 6 closes valve 57e.

[0049] In step S105, the purge gas is supplied to the processing vessel 1 to purge the gas in the processing vessel 1. Here, the control unit 6 opens the valves 52e, 55e, and 58e. As a result, the purge gas stored in the storage tanks 52d, 55d, and 58d, respectively, is supplied into the processing vessel 1. At this time, since the purge gas is supplied from the storage tanks 52d, 55d, and 58d in an increased pressure state, the purge gas is supplied into the processing vessel 1 at a relatively large flow rate, for example, a flow rate larger than the flow rate of the carrier gas. Therefore, the NH3 gas remaining in the processing vessel 1 is quickly exhausted to the exhaust pipe 41, and the NH3 gas atmosphere in the processing vessel 1 is replaced with an N2 gas atmosphere in a short time.

[0050] Furthermore, by closing the valve 57e, the NH3 gas supplied from the reactive gas supply source 57a to the gas supply line 57b is stored in the storage tank 57d, and the pressure inside the storage tank 57d increases.

[0051] After a predetermined processing time (for example, 0.01 to 5 seconds) has elapsed since the valves 52e, 55e, and 58e were opened, the control unit 6 closes the valves 52e, 55e, and 58e.

[0052] In step S106, the control unit 6 determines whether the number of repetitions z of the processes from step S102 to step S105 has exceeded a predetermined number. If the processes have not been repeated the predetermined number of times (S106·NO), the control unit 6 returns to step S102. If the processes have been repeated the predetermined number of times (S106·YES), the control unit 6 returns to step S102. The film formation process is terminated. By repeating the processes from step S102 to step S105 the predetermined number of times, a TiSiN film having a desired thickness is formed on the substrate W.

[0053] Thereafter, the substrate W is unloaded from the processing vessel 1 in a reverse order to the procedure for loading the substrate W into the processing vessel 1.

[0054] In the above example, the purge gas (N2 gas) stored in the storage tanks 52d, 55d, and 58d is supplied into the processing vessel 1 to purge the processing vessel 1 in steps S103 and S105, but the present invention is not limited to this. For example, the processing vessel 1 may be purged by the carrier gas (N2 gas) supplied into the processing vessel 1 from the N2 gas supply sources 53a, 56a, and 59a without supplying the purge gas (N2 gas) stored in the storage tanks 52d, 55d, and 58d into the processing vessel 1.

[0055] <Gas supply timing adjustment mechanism according to the first embodiment> Next, an example of the gas supply timing adjustment mechanism 7 included in the film formation apparatus according to the first embodiment will be described with reference to Fig. 4. Fig. 4 is a configuration diagram of an example of the gas supply timing adjustment mechanism 7 included in the film formation apparatus according to the first embodiment. The gas supply timing adjustment mechanism 7 simultaneously supplies a first source gas (TiCl4 gas) and a second source gas (SiH4 gas) to the processing chamber 1 in step S102 (see Fig. 2).

[0056] In addition, in Fig. 4, a gas supply line that supplies a first raw material gas from a first raw material gas supply source 51a to the processing vessel 1, and a gas supply line that supplies a second raw material gas from a second raw material gas supply source 54a to the processing vessel 1 are illustrated and described. In addition, in Fig. 4, illustration and description of gas supply lines (see Fig. 1) that supply a purge gas, a carrier gas, and a reactive gas are omitted. In addition, in Fig. 4, gas supply lines that supply process gases (first raw material gas, second raw material gas) are illustrated by solid lines, an air pressure supply line that supplies compressed air pressure is illustrated by dashed lines, and a control signal is illustrated by a dashed line.

[0057] The gas supply timing adjustment mechanism 7 includes a flow rate controller 51c, a flow rate controller 54c, a storage tank 51d (first storage tank), a storage tank 54d (second storage tank), a valve 51e (first on-off valve), a valve 54e (second on-off valve), and a solenoid valve 71 (first electromagnetic valve).

[0058] The storage tank 51d is provided in the gas supply line 51b (first gas supply line) that supplies the first source gas from the first source gas source 51a to the processing vessel 1, and stores the first source gas. The storage tank 54d is provided in the gas supply line 54b (second gas supply line) that supplies the second source gas from the second source gas source 54a to the processing vessel 1, and stores the second source gas. The flow rate controller 51c is, for example, a mass flow controller, and is provided in the gas supply line 51b upstream of the storage tank 51d, and adjusts the flow rate of the first source gas supplied from the first source gas source 51a to the storage tank 51d. The flow rate controller 54c is, for example, a mass flow controller, and is provided in the gas supply line 54b upstream of the storage tank 54d, and adjusts the flow rate of the second source gas supplied from the second source gas source 54a to the storage tank 54d.

[0059] The valve 51e is an on-off valve provided in the gas supply line 51b between the storage tank 51d and the processing vessel 1. The valve 54e is an on-off valve provided in the gas supply line 54b between the storage tank 54d and the processing vessel 1. The valves 51e and 54e are air operated valves that open and close when compressed air pressure is supplied. The valves 51e and 54e are normally closed valves that are closed when no compressed air pressure is supplied to a pilot port and open when compressed air pressure is supplied.

[0060] The air supply source 70 supplies compressed air. The air pressure supply lines 75a, 75c1, and 75c2 supply the pressure of the compressed air from the air supply source 70 to the pilot ports of the valves 51e and 54e. One end of the air pressure supply line 75a is connected to the air supply source 70, and the other end is connected to a branch portion 75b. The branch portion 75b is connected to the other end of the air pressure supply line 75a, one end of the air pressure supply line 75c1, and one end of the air pressure supply line 75c2. That is, the branch portion 75b branches the air pressure supply line 75a into the air pressure supply line 75c1 and the air pressure supply line 75c2. The other end of the air pressure supply line 75c1 is connected to the pilot port of the valve 51e. The other end of the air pressure supply line 75c2 is connected to the pilot port of the valve 54e.

[0061] The solenoid valve 71 is an on-off valve provided in the air pressure supply line 75a upstream of the branching portion 75b. The solenoid valve 71 is an electromagnetic valve that opens and closes in response to a control signal from the control unit 6. The solenoid valve 71 is a normally closed valve that is closed when no control signal is supplied and is open when a control signal is supplied.

[0062] The control unit 6 controls the gas supply timing adjustment mechanism 7. Specifically, the control unit 6 controls the opening and closing of the solenoid valve 71.

[0063] When the control unit 6 outputs a control signal to the solenoid valve 71 to command it to open, the solenoid valve 71 opens. By opening the solenoid valve 71, the pressure of the compressed air supplied from the air supply source 70 is simultaneously supplied to the pilot ports of the valves 51e and 54e. By simultaneously supplying the pressure of the compressed air to the pilot ports of the valves 51e and 54e, the valves 51e and 54e open simultaneously, and the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) are simultaneously supplied to the processing chamber 1.

[0064] Here, an example of a gas supply timing adjustment mechanism 7X according to a reference example will be described with reference to Fig. 5. Fig. 5 is a configuration diagram of an example of a gas supply timing adjustment mechanism 7X provided in a film forming apparatus according to a reference example.

[0065] 5, a gas supply line for supplying a first source gas from a first source gas supply source 51a to the processing vessel 1, and a gas supply line for supplying a second source gas from a second source gas supply source 54a to the processing vessel 1 are illustrated and described. Gas supply lines for supplying a purge gas, a carrier gas, and a reactive gas (see FIG. 1) are not illustrated and described in FIG. 5. Gas supply lines for supplying process gases (first source gas, second source gas) are illustrated by solid lines, an air pressure supply line for supplying compressed air is illustrated by dashed lines, and a control signal is illustrated by dashed lines.

[0066] The gas supply timing adjustment mechanism 7X includes a flow rate controller 51c, a flow rate controller 54c, a storage tank 51d, a storage tank 54d, a valve 51e, a valve 54e, a solenoid valve 73, and a solenoid valve 74.

[0067] The storage tank 51d is provided in the gas supply line 51b that supplies the first source gas from the first source gas source 51a to the processing vessel 1, and stores the first source gas. The storage tank 54d is provided in the gas supply line 54b that supplies the second source gas from the second source gas source 54a to the processing vessel 1, and stores the second source gas. The flow rate controller 51c is, for example, a mass flow controller, and is provided in the gas supply line 51b upstream of the storage tank 51d, and adjusts the flow rate of the first source gas supplied from the first source gas source 51a to the storage tank 51d. The flow rate controller 54c is, for example, a mass flow controller, and is provided in the gas supply line 54b upstream of the storage tank 54d, and adjusts the flow rate of the second source gas supplied from the second source gas source 54a to the storage tank 54d.

[0068] The valve 51e is an on-off valve provided in the gas supply line 51b between the storage tank 51d and the processing vessel 1. The valve 54e is an on-off valve provided in the gas supply line 54b between the storage tank 54d and the processing vessel 1. The valves 51e and 54e are air operated valves that open and close when compressed air pressure is supplied. The valves 51e and 54e are normally closed valves that are closed when no compressed air pressure is supplied to a pilot port and open when compressed air pressure is supplied.

[0069] The air supply source 70 supplies compressed air. The air pressure supply lines 78a, 78c1, and 78c2 supply the pressure of the compressed air from the air supply source 70 to the pilot ports of the valves 51e and 54e. One end of the air pressure supply line 78a is connected to the air supply source 70, and the other end is connected to a branch portion 78b. The branch portion 78b is connected to the other end of the air pressure supply line 78a, one end of the air pressure supply line 78c1, and one end of the air pressure supply line 78c2. That is, the branch portion 78b branches the air pressure supply line 78a into the air pressure supply line 78c1 and the air pressure supply line 78c2. The other end of the air pressure supply line 78c1 is connected to the pilot port of the valve 51e. The other end of the air pressure supply line 78c2 is connected to the pilot port of the valve 54e.

[0070] The solenoid valve 73 is an on-off valve provided in the air pressure supply line 78c1 downstream of the branching portion 78b. The solenoid valve 74 is an on-off valve provided in the air pressure supply line 78c2 downstream of the branching portion 78b. The solenoid valves 73 and 74 are electromagnetic valves that open and close in response to a control signal from the control unit 6. The solenoid valves 73 and 74 are normally closed valves that are closed when no control signal is supplied and open when a control signal is supplied.

[0071] The control unit 6 controls the gas supply timing adjustment mechanism 7X. Specifically, the control unit 6 controls the opening and closing of the solenoid valves 73 and 74.

[0072] When the control unit 6 outputs a control signal to the solenoid valve 73 to command it to open, the solenoid valve 73 opens. When the solenoid valve 73 opens, the pressure of the compressed air supplied from the air supply source 70 is supplied to the pilot port of the valve 51e. When the pressure of the compressed air is supplied to the pilot port of the valve 51e, the valve 51e opens, and the first source gas (TiCl4 gas) is supplied to the processing vessel 1.

[0073] Furthermore, when the control unit 6 outputs a control signal to the solenoid valve 74 to command it to open, the solenoid valve 74 opens. When the solenoid valve 74 opens, the pressure of the compressed air supplied from the air supply source 70 is supplied to the pilot port of the valve 54e. When the pressure of the compressed air is supplied to the pilot port of the valve 54e, the valve 54e opens, and the second source gas (SiH4 gas) is supplied to the processing vessel 1.

[0074] FIG. 6 is a time chart showing an example of gas supply timing in the film forming method of the reference example.

[0075] In the gas supply timing adjustment mechanism 7X of the film forming apparatus according to the reference example, a solenoid valve 73 for controlling the opening and closing of the valve 51e and a solenoid valve 74 for controlling the opening and closing of the valve 54e are separately provided. Therefore, even if the control unit 6 simultaneously outputs control signals to command the solenoid valves 73 and 74 to open in step S102, a discrepancy may occur between the timing at which the supply of the first source gas (TiCl4 gas) starts and the timing at which the supply of the second source gas (SiH4 gas) starts due to an instrumental difference or the like.

[0076] FIG. 6(a) is a time chart showing an example of the timing of gas supply when the valve 51e opens after the valve 54e.

[0077] In this example, in step S102, the adsorption of the second source gas (SiH4 gas) starts first, and then the adsorption of the first source gas (TiCl4 gas) starts later, so that the amount of SiH4 adsorbed on the surface of the substrate W increases and the amount of TiCl4 adsorbed on the surface of the substrate W decreases. As a result, the atomic concentration of Si in the TiSiN film formed on the substrate W increases and the atomic concentration of Ti decreases.

[0078] FIG. 6(b) is a time chart showing an example of the timing of gas supply when the valve 54e opens after the valve 51e.

[0079] In this example, in step S102, the adsorption of the first source gas (TiCl4 gas) starts first, and the adsorption of the second source gas (SiH4 gas) starts later, so that the amount of TiCl4 adsorbed on the surface of the substrate W increases and the amount of SiH4 adsorbed on the surface of the substrate W decreases. As a result, the atomic concentration of Ti in the TiSiN film formed on the substrate W increases and the atomic concentration of Si decreases.

[0080] As described above, in the gas supply timing adjustment mechanism 7X (see FIG. 5) provided in the film forming apparatus according to the reference example, the quality of the TiSiN film formed on the substrate W may become unstable due to machine differences, etc. For example, the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W may become unstable.

[0081] On the other hand, in the gas supply timing adjustment mechanism 7 (see FIG. 4) included in the film forming apparatus according to the first embodiment, the control unit 6 outputs a control signal to one solenoid valve 71 to command the valve to open. Then, by opening the solenoid valve 71, the pressure of compressed air is simultaneously supplied to the pilot port of the valve 51e and the pilot port of the valve 54e, and the valves 51e and 54e are simultaneously opened. That is, it is possible to reduce the difference between the timing at which the supply of the first source gas (TiCl4 gas) is started and the timing at which the supply of the second source gas (SiH4 gas) is started. Alternatively, in the gas supply timing adjustment mechanism 7 (see FIG. 4) included in the film forming apparatus according to the first embodiment, it is possible to match the timing at which the supply of the first source gas (TiCl4 gas) is started and the timing at which the supply of the second source gas (SiH4 gas) is started (see FIG. 3). This makes it possible to stabilize the film quality of the TiSiN film formed on the substrate W. For example, it is possible to stabilize the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W.

[0082] In addition, by adjusting the flow rate of the first raw material gas (TiCl4 gas) supplied to the processing vessel 1 from the storage tank 51d controlled by the flow rate controller 51c and the flow rate of the second raw material gas (SiH4 gas) supplied to the processing vessel 1 from the storage tank 54d controlled by the flow rate controller 54c, the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W can be adjusted, and the film quality of the TiSiN film can be adjusted.

[0083] <Gas supply timing adjustment mechanism according to the second embodiment> Next, an example of a gas supply timing adjustment mechanism 7A included in the film formation apparatus according to the second embodiment will be described with reference to Fig. 7. Fig. 7 is a configuration diagram of an example of the gas supply timing adjustment mechanism 7A included in the film formation apparatus according to the second embodiment. The gas supply timing adjustment mechanism 7A simultaneously supplies a first source gas (TiCl4 gas) and a second source gas (SiH4 gas) to the processing chamber 1 in step S102 (see Fig. 2).

[0084] Here, the film forming apparatus according to the second embodiment is different from the film forming apparatus according to the first embodiment (see FIG. 1) in that a gas supply line for supplying a first source gas from a first source gas supply source 51a to the processing vessel 1 and a gas supply line for supplying a second source gas from a second source gas supply source 54a to the processing vessel 1 are different. The other configurations are the same, and redundant explanations are omitted. Also, in FIG. 7, the gas supply line for supplying a first source gas from a first source gas supply source 51a to the processing vessel 1 and the gas supply line for supplying a second source gas from a second source gas supply source 54a to the processing vessel 1 are illustrated and described. Also, in FIG. 7, the illustration and explanation of the gas supply lines (see FIG. 1) for supplying a purge gas, a carrier gas, and a reactive gas are omitted.

[0085] The gas supply timing adjustment mechanism 7A includes a flow rate controller 51c, a flow rate controller 54c, a storage tank 51d (first storage tank), a storage tank 54d (second storage tank), a valve 514e (on-off valve), and a solenoid valve 71 (first electromagnetic valve). One end of the gas supply line 51b is connected to the first source gas supply source 51a, and the other end is connected to the junction 514g. One end of the gas supply line 54b is connected to the second source gas supply source 54a, and the other end is connected to the junction 514g. The junction 514g is connected to the other end of the gas supply line 51b, the other end of the gas supply line 54b, and one end of the gas supply line 514b. That is, the junction 514g merges the gas supply line 51b and the gas supply line 54b to form the gas supply line 514b. The other end of the gas supply line 514b is connected to the shower head 3.

[0086] The storage tank 51d is provided in the gas supply line 51b that supplies the first source gas from the first source gas source 51a to the processing vessel 1, and stores the first source gas. The storage tank 54d is provided in the gas supply line 54b that supplies the second source gas from the second source gas source 54a to the processing vessel 1, and stores the second source gas. The flow rate controller 51c is, for example, a mass flow controller, and is provided in the gas supply line 51b upstream of the storage tank 51d, and adjusts the flow rate of the first source gas supplied from the first source gas source 51a to the storage tank 51d. The flow rate controller 54c is, for example, a mass flow controller, and is provided in the gas supply line 54b upstream of the storage tank 54d, and adjusts the flow rate of the second source gas supplied from the second source gas source 54a to the storage tank 54d.

[0087] The valve 514e is an on-off valve provided in the gas supply line 514b downstream of the junction 514g in the gas supply line between the storage tanks 51d, 54d and the processing vessel 1. The valve 514e is an air operated valve that opens and closes when compressed air pressure is supplied. The valve 514e is a normally closed valve that is closed when no compressed air pressure is supplied to a pilot port and opens when compressed air pressure is supplied.

[0088] The air supply source 70 supplies compressed air. The air pressure supply line 76a supplies the compressed air pressure from the air supply source 70 to the pilot port of the valve 514e. One end of the air pressure supply line 76a is connected to the air supply source 70, and the other end is connected to the pilot port of the valve 514e.

[0089] The solenoid valve 71 is an on-off valve provided in the air pressure supply line 76a. The solenoid valve 71 is an electromagnetic valve that opens and closes in response to a control signal from the control unit 6. The solenoid valve 71 is a normally closed valve that is closed when no control signal is supplied and opens when a control signal is supplied.

[0090] The control unit 6 controls the gas supply timing adjustment mechanism 7 A. Specifically, the control unit 6 controls the opening and closing of the solenoid valve 71.

[0091] When the control unit 6 outputs a control signal to command the solenoid valve 71 to open, the solenoid valve 71 opens. When the solenoid valve 71 opens, the pressure of the compressed air supplied from the air supply source 70 is supplied to the pilot port of the valve 514e. When the pressure of the compressed air is supplied to the pilot port of the valve 514e, the valve 514e opens, and the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) are simultaneously supplied to the processing vessel 1.

[0092] The gas supply timing adjustment mechanism 7 (see FIG. 7) included in the film forming apparatus according to the second embodiment can match the timing at which the supply of the first source gas (TiCl4 gas) starts with the timing at which the supply of the second source gas (SiH4 gas) starts (see FIG. 3). This can stabilize the film quality of the TiSiN film formed on the substrate W. For example, the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W can be stabilized.

[0093] In addition, by adjusting the flow rate of the first raw material gas (TiCl4 gas) supplied to the processing vessel 1 from the storage tank 51d controlled by the flow rate controller 51c and the flow rate of the second raw material gas (SiH4 gas) supplied to the processing vessel 1 from the storage tank 54d controlled by the flow rate controller 54c, the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W can be adjusted, and the film quality of the TiSiN film can be adjusted.

[0094] <Gas supply timing adjustment mechanism according to the third embodiment> Next, an example of the gas supply timing adjustment mechanism 7B included in the film formation apparatus according to the third embodiment will be described with reference to Fig. 8. Fig. 8 is a configuration diagram of an example of the gas supply timing adjustment mechanism 7B included in the film formation apparatus according to the third embodiment. The gas supply timing adjustment mechanism 7B simultaneously supplies a first source gas (TiCl4 gas) and a second source gas (SiH4 gas) to the processing chamber 1 in step S102 (see Fig. 2).

[0095] Here, the film forming apparatus according to the third embodiment is different from the film forming apparatus according to the first embodiment (see FIG. 1) in that a gas supply line for supplying a first source gas from a first source gas supply source 51a to the processing vessel 1 and a gas supply line for supplying a second source gas from a second source gas supply source 54a to the processing vessel 1 are different. The other configurations are similar, and a duplicated description will be omitted. Also, in FIG. 8, the gas supply line for supplying a first source gas from a first source gas supply source 51a to the processing vessel 1 and the gas supply line for supplying a second source gas from a second source gas supply source 54a to the processing vessel 1 are illustrated and described. Also, in FIG. 8, the gas supply lines for supplying a purge gas, a carrier gas, and a reactive gas (see FIG. 1) are not illustrated and described.

[0096] The gas supply timing adjustment mechanism 7B includes a flow rate controller 51c, a flow rate controller 54c, a storage tank 514d (first storage tank), a valve 514e (first on-off valve), and a solenoid valve 71 (first electromagnetic valve). One end of the gas supply line 51b is connected to the first source gas supply source 51a, and the other end is connected to the storage tank 514d. One end of the gas supply line 54b is connected to the second source gas supply source 54a, and the other end is connected to the storage tank 514d. One end of the gas supply line 514b is connected to the storage tank 514d, and the other end is connected to the shower head 3.

[0097] The storage tank 514d is supplied with the first raw material gas from the first raw material gas supply source 51a via the gas supply line 51b, and the second raw material gas from the second raw material gas supply source 54a via the gas supply line 54b, and stores the first raw material gas and the second raw material gas. The flow rate controller 51c is, for example, a mass flow controller, and is provided on the gas supply line 51b upstream of the storage tank 514d, and adjusts the flow rate of the first raw material gas supplied from the first raw material gas supply source 51a to the storage tank 514d. The flow rate controller 54c is, for example, a mass flow controller, and is provided on the gas supply line 54b upstream of the storage tank 514d, and adjusts the flow rate of the second raw material gas supplied from the second raw material gas supply source 54a to the storage tank 514d.

[0098] The valve 514e is an on-off valve provided in the gas supply line 514b between the storage tank 514d and the processing vessel 1. The valve 514e is an air operated valve that opens and closes when compressed air pressure is supplied to it. The valve 514e is a normally closed valve that is closed when no compressed air pressure is supplied to a pilot port and opens when compressed air pressure is supplied to it.

[0099] The air supply source 70 supplies compressed air. The air pressure supply line 76a supplies the compressed air pressure from the air supply source 70 to the pilot port of the valve 514e. One end of the air pressure supply line 76a is connected to the air supply source 70, and the other end is connected to the pilot port of the valve 514e.

[0100] The solenoid valve 71 is an on-off valve provided in the air pressure supply line 76a. The solenoid valve 71 is an electromagnetic valve that opens and closes in response to a control signal from the control unit 6. The solenoid valve 71 is a normally closed valve that is closed when no control signal is supplied and opens when a control signal is supplied.

[0101] The control unit 6 controls the gas supply timing adjustment mechanism 7 B. Specifically, the control unit 6 controls the opening and closing of the solenoid valve 71.

[0102] When the control unit 6 outputs a control signal to command the solenoid valve 71 to open, the solenoid valve 71 opens. When the solenoid valve 71 opens, the pressure of the compressed air supplied from the air supply source 70 is supplied to the pilot port of the valve 514e. When the pressure of the compressed air is supplied to the pilot port of the valve 514e, the valve 514e opens, and the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) are simultaneously supplied to the processing vessel 1.

[0103] The gas supply timing adjustment mechanism 7 (see FIG. 8) included in the film forming apparatus according to the third embodiment can match the timing at which the supply of the first source gas (TiCl4 gas) starts with the timing at which the supply of the second source gas (SiH4 gas) starts (see FIG. 3). This can stabilize the film quality of the TiSiN film formed on the substrate W. For example, the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W can be stabilized.

[0104] The flow rate of the first source gas (TiCl4 gas) supplied from the storage tank 51d to the processing vessel 1, which is controlled by the flow rate controller 51c, and the flow rate of the second source gas (SiH4 gas) supplied from the storage tank 54d to the processing vessel 1, which is controlled by the flow rate controller 54c, are adjusted to adjust the partial pressures of the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) stored in the storage tank 514d. The partial pressures of the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) stored in the storage tank 514d are adjusted to adjust the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W, and thus the film quality of the TiSiN film can be adjusted.

[0105] <Gas supply timing adjustment mechanism according to the fourth embodiment> Next, an example of a gas supply timing adjustment mechanism 7C included in the film formation apparatus according to the fourth embodiment will be described with reference to Fig. 9. Fig. 9 is a configuration diagram of an example of the gas supply timing adjustment mechanism 7C included in the film formation apparatus according to the fourth embodiment. The gas supply timing adjustment mechanism 7C simultaneously supplies a first source gas (TiCl4 gas) and a second source gas (SiH4 gas) to the processing chamber 1 in step S102 (see Fig. 2).

[0106] Here, the film forming apparatus according to the fourth embodiment is different from the film forming apparatus according to the first embodiment (see FIG. 1) in that a gas supply line for supplying a first source gas from a first source gas supply source 51a to the processing vessel 1 and a gas supply line for supplying a second source gas from a second source gas supply source 54a to the processing vessel 1 are different. The other configurations are similar, and redundant explanations are omitted. Also, in FIG. 9, the gas supply line for supplying a first source gas from a first source gas supply source 51a to the processing vessel 1 and the gas supply line for supplying a second source gas from a second source gas supply source 54a to the processing vessel 1 are illustrated and described. Also, in FIG. 9, the illustration and explanation of the gas supply lines (see FIG. 1) for supplying a purge gas, a carrier gas, and a reactive gas are omitted.

[0107] The gas supply timing adjustment mechanism 7C includes a flow rate controller 51c, a flow rate controller 54c, a flow rate controller 51c2, a storage tank 514d (first storage tank), a storage tank 51d2 (second storage tank), a valve 514e (first on-off valve), a valve 51e2 (second on-off valve), a solenoid valve 71 (first electromagnetic valve), and a solenoid valve 72 (second electromagnetic valve). One end of the gas supply line 51b is connected to the first source gas supply source 51a, and the other end is connected to the storage tank 514d. One end of the gas supply line 54b is connected to the second source gas supply source 54a, and the other end is connected to the storage tank 514d. One end of the gas supply line 514b is connected to the storage tank 514d, and the other end is connected to the shower head 3. In addition, one end of the gas supply line 51b2 branches off from the gas supply line 51b, and the other end joins the gas supply line 514b downstream of the valve 514e and is connected to the shower head 3. A flow rate controller 51c2, a storage tank 51d2, and a valve 51e2 are provided in the gas supply line 51b2 from the upstream side.

[0108] The storage tank 514d is supplied with the first raw material gas from the first raw material gas supply source 51a via the gas supply line 51b, and the second raw material gas from the second raw material gas supply source 54a via the gas supply line 54b, and stores the first raw material gas and the second raw material gas. The flow rate controller 51c is, for example, a mass flow controller, and is provided on the gas supply line 51b downstream of the branch point between the gas supply line 51b and the gas supply line 51b2 and upstream of the storage tank 514d, and adjusts the flow rate of the first raw material gas supplied from the first raw material gas supply source 51a to the storage tank 514d. The flow rate controller 54c is, for example, a mass flow controller, and is provided on the gas supply line 54b upstream of the storage tank 514d, and adjusts the flow rate of the second raw material gas supplied from the second raw material gas supply source 54a to the storage tank 514d.

[0109] The storage tank 51d2 is provided in the gas supply line 51b2 that supplies the first source gas from the first source gas supply source 51a to the processing chamber 1, and stores the first source gas. The flow rate controller 51c2 is, for example, a mass flow controller, and is provided in the gas supply line 51b2 downstream of the branch point between the gas supply line 51b and the gas supply line 51b2 and upstream of the storage tank 51d2, and adjusts the flow rate of the first source gas supplied from the first source gas supply source 51a to the storage tank 51d2.

[0110] The valve 514e is an on-off valve provided in the gas supply line 514b between the storage tank 514d and the processing vessel 1. The valve 51e2 is an on-off valve provided in the gas supply line 51b2 between the storage tank 51d2 and the processing vessel 1. The valves 514e and 51e2 are air operated valves that open and close when compressed air pressure is supplied. The valves 514e and 51e2 are normally closed valves that are closed when no compressed air pressure is supplied to a pilot port and open when compressed air pressure is supplied.

[0111] The air supply source 70 supplies compressed air. The air pressure supply lines 77a, 77c1, and 77c2 supply the pressure of the compressed air from the air supply source 70 to the pilot ports of the valves 514e and 51e2. One end of the air pressure supply line 77a is connected to the air supply source 70, and the other end is connected to a branch portion 77b. The branch portion 77b is connected to the other end of the air pressure supply line 77a, one end of the air pressure supply line 77c1, and one end of the air pressure supply line 77c2. That is, the branch portion 77b branches the air pressure supply line 77a into the air pressure supply line 77c1 and the air pressure supply line 77c2. The other end of the air pressure supply line 77c1 is connected to the pilot port of the valve 514e. The other end of the air pressure supply line 77c2 is connected to the pilot port of the valve 51e2.

[0112] The solenoid valve 71 is an on-off valve provided in an air pressure supply line 77c1 (first air pressure supply line). The solenoid valve 72 is an on-off valve provided in an air pressure supply line 77c2 (second air pressure supply line). The solenoid valves 71 and 72 are electromagnetic valves that open and close in response to a control signal from the control unit 6. The solenoid valves 71 and 72 are normally closed valves that are closed when no control signal is supplied and open when a control signal is supplied.

[0113] The control unit 6 controls the gas supply timing adjustment mechanism 7 C. Specifically, the control unit 6 controls the opening and closing of the solenoid valves 71 and 72.

[0114] When the control unit 6 outputs a control signal to command the solenoid valve 71 to open, the solenoid valve 71 opens. When the solenoid valve 71 opens, the pressure of the compressed air supplied from the air supply source 70 is supplied to the pilot port of the valve 514e. When the pressure of the compressed air is supplied to the pilot port of the valve 514e, the valve 514e opens, and the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) are simultaneously supplied to the processing vessel 1.

[0115] Furthermore, when the control unit 6 outputs a control signal to the solenoid valve 72 to command it to open, the solenoid valve 72 opens. When the solenoid valve 72 opens, the pressure of the compressed air supplied from the air supply source 70 is supplied to the pilot port of the valve 51e2. When the pressure of the compressed air is supplied to the pilot port of the valve 51e2, the valve 51e2 opens, and only the first source gas (TiCl4 gas) is supplied to the processing vessel 1.

[0116] In the gas supply timing adjustment mechanism 7C included in the film forming apparatus according to the fourth embodiment, the controller 6 outputs a control signal to the solenoid valve 71 to command it to open, so that the solenoid valve 71 opens and the valve 514e opens. This allows the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) to be simultaneously supplied to the processing chamber 1. That is, the timing at which the supply of the first source gas (TiCl4 gas) starts and the timing at which the supply of the second source gas (SiH4 gas) starts can be made to coincide with each other (see FIG. 10). This allows the quality of the TiSiN film formed on the substrate W to be stabilized. For example, the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W can be stabilized.

[0117] The flow rate of the first source gas (TiCl4 gas) supplied from the storage tank 51d to the processing vessel 1, which is controlled by the flow rate controller 51c, and the flow rate of the second source gas (SiH4 gas) supplied from the storage tank 54d to the processing vessel 1, which is controlled by the flow rate controller 54c, are adjusted to adjust the partial pressures of the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) stored in the storage tank 514d. The partial pressures of the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) stored in the storage tank 514d are adjusted to adjust the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W, and thus the film quality of the TiSiN film can be adjusted.

[0118] In the gas supply timing adjustment mechanism 7C included in the film forming apparatus according to the fourth embodiment, the controller 6 outputs a control signal to the solenoid valve 72 to open the solenoid valve 72, and the valve 51e2 is opened. As a result, only the first source gas (TiCl4 gas) is supplied to the processing chamber 1.

[0119] FIG. 10 is a time chart showing an example of gas supply timing in the film formation method of the film formation apparatus according to the fourth embodiment.

[0120] Here, the process repeats the steps of supplying TiCl4 gas (first source gas) and SiH4 gas (second source gas) to the processing vessel 1 (step S102), supplying a purge gas to the processing vessel 1 (step S103), supplying NH3 gas (reactive gas) to the processing vessel 1 (step S104), and supplying a purge gas to the processing vessel 1 (step S105).

[0121] Here, the process of supplying TiCl4 gas (first source gas) and SiH4 gas (second source gas) to the processing vessel 1 (see step S102 in FIG. 2) includes a process of simultaneously supplying TiCl4 gas (first source gas) and SiH4 gas (second source gas) (step S11) and a process of supplying only TiCl4 gas (first source gas) (step S12).

[0122] In step S11, the control unit 6 outputs a control signal to command the solenoid valve 71 to open. As a result, the solenoid valve 71 opens, the valve 514e opens, and the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) are simultaneously supplied to the processing chamber 1.

[0123] In step S12, the control unit 6 outputs a control signal to open the solenoid valve 72. As a result, the solenoid valve 72 opens, the valve 51e2 opens, and only the first source gas (TiCl4 gas) is supplied to the processing chamber 1.

[0124] This makes it possible to adjust the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) adsorbed onto the substrate W, thereby adjusting the atomic concentrations of Ti and Si in the TiSiN film formed on the substrate W, and thereby adjusting the film quality of the TiSiN film.

[0125] FIG. 11 is a schematic cross-sectional view showing an example of a film formed on a substrate W in another film formation method using the film formation apparatus according to the fourth embodiment.

[0126] Here, a step of forming a TiSiN film 81 and a step of forming a TiN film 82 are alternately repeated on a substrate W having an underlayer 80 to form a laminated film.

[0127] That is, in the process of forming the TiSiN film 81, the TiSiN film 81 is formed according to the film forming method shown in Fig. 2. Here, in step S102, the control unit 6 outputs a control signal to the solenoid valve 71 to command it to open. This opens the solenoid valve 71, opens the valve 514e, and simultaneously supplies the first source gas (TiCl4 gas) and the second source gas (SiH4 gas) to the processing vessel 1. The other processes (S101, S103 to S106) are similar, and therefore repeated explanations will be omitted.

[0128] In addition, in the process of forming the TiN film 82, the TiN film 82 is formed by the ALD method similar to the film formation method shown in Fig. 2. However, in step S102, the control unit 6 outputs a control signal to the solenoid valve 72 to command it to open. This opens the solenoid valve 72, opens the valve 51e2, and supplies only the first source gas (TiCl4 gas) to the processing vessel 1. The other processes (S101, S103 to S106) are similar, and therefore repeated explanations will be omitted.

[0129] As a result, using the film formation apparatus according to the fourth embodiment, a laminated film in which TiSiN films 81 and TiN films 82 are alternately laminated as shown in FIG. 11 can be formed.

[0130] In the gas supply timing adjustment mechanism 7C according to the fourth embodiment shown in FIG. 9, a configuration for supplying only the first raw material gas (TiCl4 gas) to the processing vessel 1 has been added to the configuration for simultaneously supplying the first raw material gas (TiCl4 gas) and the second raw material gas (SiH4 gas) to the processing vessel 1 shown in the gas supply timing adjustment mechanism 7B according to the third embodiment shown in FIG. 8, but the present invention is not limited to this.

[0131] <Gas supply timing adjustment mechanism according to the fifth embodiment> Next, an example of a gas supply timing adjustment mechanism 7D included in the film formation apparatus according to the fifth embodiment will be described with reference to Fig. 12. Fig. 12 is a configuration diagram of an example of the gas supply timing adjustment mechanism 7D included in the film formation apparatus according to the fifth embodiment.

[0132] The gas supply timing adjustment mechanism 7D according to the fifth embodiment shown in FIG. 12 is configured to simultaneously supply a first raw material gas (TiCl4 gas) and a second raw material gas (SiH4 gas) to the processing vessel 1, while adding a configuration (gas supply line 51b2, flow rate controller 51c2, storage tank 51d2, valve 51e2, solenoid valve 72) for supplying only the first raw material gas (TiCl4 gas) to the processing vessel 1, in addition to the configuration shown in the gas supply timing adjustment mechanism 7 according to the first embodiment shown in FIG. 4 for simultaneously supplying the first raw material gas (TiCl4 gas) and the second raw material gas (SiH4 gas) to the processing vessel 1.

[0133] Specifically, one end of the gas supply line 51b2 branches off from the gas supply line 51b upstream of the flow rate controller 51c, and the other end merges with the gas supply line 51b downstream of the valve 51e (or the gas supply line 54b downstream of the valve 54e) to be connected to the shower head 3. In the gas supply line 51b2, from the upstream side, a flow rate controller 51c2, a storage tank 51d2 (third storage tank), and a valve 51e2 (third on-off valve) are interposed.

[0134] The flow rate controller 51c2, storage tank 51d2 and valve 51e2 provided in the gas supply line 51b2 are similar to the flow rate controller 51c2, storage tank 51d2 and valve 51e2 provided in the gas supply line 51b2 in the gas supply timing adjustment mechanism 7C according to the fourth embodiment (see FIG. 9), and therefore repeated explanations will be omitted.

[0135] The air pressure supply lines 77a, 77c1, 77c2, 77e1, and 77e2 supply compressed air pressure from the air supply source 70 to the pilot ports of the valves 51e, 54e, and 51e2. One end of the air pressure supply line 77a is connected to the air supply source 70, and the other end is connected to a branch portion 77b. The branch portion 77b is connected to the other end of the air pressure supply line 77a, one end of the air pressure supply line 77c1, and one end of the air pressure supply line 77c2. That is, the branch portion 77b branches the air pressure supply line 77a into the air pressure supply line 77c1 and the air pressure supply line 77c2. The other end of the air pressure supply line 77c1 is connected to the branch portion 77d. The other end of the air pressure supply line 77c2 is connected to the pilot port of the valve 51e2. The branching portion 77d is connected to the other end of the air pressure supply line 77c1, one end of the air pressure supply line 77e1, and one end of the air pressure supply line 77e2. That is, the branching portion 77d branches the air pressure supply line 77c1 into the air pressure supply line 77e1 and the air pressure supply line 77e2. The other end of the air pressure supply line 77e1 is connected to the pilot port of the valve 51e. The other end of the air pressure supply line 77e2 is connected to the pilot port of the valve 54e.

[0136] The solenoid valve 71 is an on-off valve provided in an air pressure supply line 77c1 (first air pressure supply line) upstream of the branch portion 77d. The solenoid valve 72 is an on-off valve provided in an air pressure supply line 77c2 (second air pressure supply line).

[0137] When the solenoid valve 71 is opened, compressed air is supplied to the valves 51e and 54e. When the solenoid valve 72 is opened, compressed air is supplied to the valve 51e2.

[0138] According to the gas supply timing adjustment mechanism 7D of the fifth embodiment, similarly to the gas supply timing adjustment mechanism 7C of the fourth embodiment, it is possible to carry out a process of simultaneously supplying a first raw material gas (TiCl4 gas) and a second raw material gas (SiH4 gas) to the processing vessel 1, and a process of supplying only the first raw material gas (TiCl4 gas) to the processing vessel 1.

[0139] <Gas supply timing adjustment mechanism according to the sixth embodiment> Next, an example of a gas supply timing adjustment mechanism 7E included in the film formation apparatus according to the sixth embodiment will be described with reference to Fig. 13. Fig. 13 is a configuration diagram of an example of the gas supply timing adjustment mechanism 7E included in the film formation apparatus according to the sixth embodiment.

[0140] The gas supply timing adjustment mechanism 7E according to the sixth embodiment shown in FIG. 13 is configured to simultaneously supply a first raw material gas (TiCl4 gas) and a second raw material gas (SiH4 gas) to the processing vessel 1, while adding a configuration (gas supply line 51b2, flow rate controller 51c2, storage tank 51d2, valve 51e2, solenoid valve 72) for supplying only the first raw material gas (TiCl4 gas) to the processing vessel 1, in addition to the configuration shown in the gas supply timing adjustment mechanism 7A according to the second embodiment shown in FIG. 7 for simultaneously supplying the first raw material gas (TiCl4 gas) and the second raw material gas (SiH4 gas) to the processing vessel 1.

[0141] Specifically, one end of the gas supply line 51b2 branches off from the gas supply line 51b upstream of the flow rate controller 51c, and the other end joins the gas supply line 514b downstream of the valve 514e and is connected to the shower head 3. In the gas supply line 51b2, from the upstream side, a flow rate controller 51c2, a storage tank 51d2 (third storage tank), and a valve 51e2 (second on-off valve) are interposed.

[0142] The flow rate controller 51c2, storage tank 51d2 and valve 51e2 provided in the gas supply line 51b2 are similar to the flow rate controller 51c2, storage tank 51d2 and valve 51e2 provided in the gas supply line 51b2 in the gas supply timing adjustment mechanism 7C according to the fourth embodiment (see FIG. 9), and therefore repeated explanations will be omitted.

[0143] The air pressure supply lines 77a, 77c1, and 77c2 supply compressed air pressure from the air supply source 70 to the pilot ports of the valves 514e and 51e2. One end of the air pressure supply line 77a is connected to the air supply source 70, and the other end is connected to a branch portion 77b. The branch portion 77b is connected to the other end of the air pressure supply line 77a, one end of the air pressure supply line 77c1, and one end of the air pressure supply line 77c2. That is, the branch portion 77b branches the air pressure supply line 77a into the air pressure supply line 77c1 and the air pressure supply line 77c2. The other end of the air pressure supply line 77c1 is connected to the pilot port of the valve 514e. The other end of the air pressure supply line 77c2 is connected to the pilot port of the valve 51e2.

[0144] The solenoid valve 71 is an on-off valve provided in an air pressure supply line 77c1 (first air pressure supply line). The solenoid valve 72 is an on-off valve provided in an air pressure supply line 77c2 (second air pressure supply line).

[0145] When the solenoid valve 71 is opened, compressed air is supplied to the valve 514e. When the solenoid valve 72 is opened, compressed air is supplied to the valve 51e2.

[0146] The gas supply timing adjustment mechanism 7E of the sixth embodiment, like the gas supply timing adjustment mechanism 7C of the fourth embodiment, can perform a process of simultaneously supplying a first raw material gas (TiCl4 gas) and a second raw material gas (SiH4 gas) to the processing vessel 1, and a process of supplying only the first raw material gas (TiCl4 gas) to the processing vessel 1.

[0147] Although the film forming apparatus has been described above, the present disclosure is not limited to the above-described embodiments, and various modifications and improvements are possible within the scope of the gist of the present disclosure described in the claims. [Explanation of symbols]

[0148] W substrate 1 Processing vessel 2. Placement table 3. Shower head 4 Exhaust section 5 Gas supply mechanism 6. Control Unit 7. Gas supply timing adjustment mechanism 51a First raw gas supply source 54a Second raw gas supply source 57a Reactive gas supply source 51b, 54b, 514b, 51b2 Gas supply line 51d, 54d, 514d, 51d2 Storage tank 51e,54e,514e,51e2 valves 514g Confluence 70 Air supply source 71~74 Solenoid valve 75a, 75c1, 75c2, 76a, 77a, 77c1, 77c2, 77e1, 77e2, 78a, 78c1, 78c2 Air pressure supply line 75b, 77b, 77d, 78b Branch

Claims

1. A film forming apparatus capable of supplying a first source gas, a second source gas, and a reaction gas to a processing chamber, a gas supply timing adjustment mechanism capable of simultaneously supplying the first source gas and the second source gas to the processing chamber; A control unit that controls the gas supply timing adjustment mechanism. Film deposition equipment.

2. The gas supply timing adjustment mechanism includes: a first storage tank for storing the first source gas; a second storage tank for storing the second source gas; a first on-off valve provided in a first gas supply line from the first storage tank to the processing vessel and opened and closed by air drive; a second on-off valve provided in a second gas supply line from the second storage tank to the processing vessel and opened and closed by air drive; a first solenoid valve provided upstream of the branching portion of the air pressure supply line, the air pressure supply line branching compressed air supplied from an air supply source at a branching portion and supplying the pressure of the compressed air to the first on-off valve and the second on-off valve; The control unit is Controlling the opening and closing of the first solenoid valve; The film forming apparatus according to claim 1 .

3. The gas supply timing adjustment mechanism includes: a first storage tank for storing the first source gas; a second storage tank for storing the second source gas; a gas supply line that merges the first source gas supplied from the first storage tank and the second source gas supplied from the second storage tank at a junction portion and supplies the first source gas and the second source gas to the processing vessel, the gas supply line having a junction portion downstream of the junction portion, the gas supply line having a valve that is opened and closed by air drive; a first solenoid valve provided in an air pressure supply line that supplies compressed air pressure from an air supply source to the on-off valve; The control unit is Controlling the opening and closing of the first solenoid valve; The film forming apparatus according to claim 1 .

4. The gas supply timing adjustment mechanism includes: a first storage tank configured to store the first source gas and the second source gas; a first on-off valve that is provided in a gas supply line from the first storage tank to the processing vessel and that is opened and closed by air drive; a first solenoid valve provided in a first air pressure supply line that supplies compressed air pressure from an air supply source to the first opening / closing valve; The control unit is Controlling the opening and closing of the first solenoid valve; The film forming apparatus according to claim 1 .

5. The gas supply timing adjustment mechanism includes: a third storage tank configured to store the first source gas; a third on-off valve that is provided in a gas supply line from the third storage tank to the processing vessel and that is opened and closed by air drive; a second solenoid valve provided in a second air pressure supply line that supplies compressed air pressure from the air supply source to the third opening / closing valve, The control unit is Controlling opening and closing of the first solenoid valve and the second solenoid valve. The film forming apparatus according to claim 2 .

6. The gas supply timing adjustment mechanism includes: a third storage tank configured to store the first source gas; a second on-off valve that is provided in a gas supply line from the second storage tank to the processing vessel and that is opened and closed by air drive; a second solenoid valve provided in a second air pressure supply line that supplies compressed air pressure from the air supply source to the second opening / closing valve, The control unit is Controlling opening and closing of the first solenoid valve and the second solenoid valve. The film forming apparatus according to claim 3 .

7. The gas supply timing adjustment mechanism includes: a second storage tank for storing the first source gas; a second on-off valve that is provided in a gas supply line from the second storage tank to the processing vessel and that is opened and closed by air drive; a second solenoid valve provided in a second air pressure supply line that supplies compressed air pressure from the air supply source to the second opening / closing valve, The control unit is Controlling opening and closing of the first solenoid valve and the second solenoid valve. The film forming apparatus according to claim 4 .

8. The control unit is controlling the first solenoid valve to supply the first source gas and the second source gas to the processing vessel; supplying the reaction gas to the processing vessel; The film forming apparatus according to claim 2 .

9. The control unit is controlling the first solenoid valve to supply the first source gas and the second source gas to the processing vessel; controlling the second solenoid valve to supply the first source gas to the processing vessel; supplying the reaction gas to the processing vessel; The film forming apparatus according to claim 5 .

10. the first source gas is a metal-containing gas that contains a metal element, the second source gas is a silicon-containing gas containing silicon element, The reaction gas is a nitrogen-containing gas containing a nitrogen element. The film forming apparatus according to claim 1 .

11. The first source gas is TiCl ４ and The second source gas is SiH ４ and The reaction gas is NH ３ and forming a TiSiN film on a substrate placed on a mounting table in the processing chamber; The film forming apparatus according to claim 1 .

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