Vcsel polarization control using structural birefringence resonator

Abstract

To provide a method of forming a VCSEL with a structurally birefringent resonator.SOLUTION: A method includes a step of growing a bottom distributed Bragg reflector (DBR) and a first portion of a resonator on a substrate to form a bottom structure including a plurality of layers. One or more anisotropic features are etched on an upper side layer of the bottom structure to create a patterned growth interface. On the patterned growth interface, a remaining portion of the resonator and a top DBR are overgrown to form an epitaxial structure. One or more oxide openings are formed within the epitaxial structure.SELECTED DRAWING: Figure 1

Description

[Background technology]

[0001]

[0001] The limitations and disadvantages of conventional vertical cavity surface emitting lasers will become apparent to those skilled in the art by comparing such conventional approaches with certain aspects of the present method and system discussed in the remainder of this disclosure with reference to the drawings. Summary of the Invention

[0002]

[0002] Systems and methods are provided for producing a vertical cavity surface emitting laser (VCSEL) with a birefringent cavity operable to control polarization, substantially as illustrated by and / or described in connection with at least one of the figures, and as more fully discussed in the claims. [Brief description of the drawings]

[0003] [Figure 1]

[0003] FIG. 1 illustrates an exemplary VCSEL epitaxial structure with a birefringent cavity, in accordance with various exemplary embodiments of the present disclosure. [Figure 2A]

[0004] FIG. 2A is a diagram illustrating an example of a resonator, according to various exemplary embodiments of the present disclosure. [Figure 2B] FIG. 2B is a diagram illustrating an example of a resonator, according to various exemplary embodiments of the present disclosure. [Figure 3A]

[0005] FIG. 3A illustrates an example variation of effective refractive index with respect to grating fill factor, according to various exemplary embodiments of the present disclosure. [Figure 3B]

[0006] FIG. 3B illustrates an exemplary variation of birefringence strength with respect to grating fill factor, according to various exemplary embodiments of the present disclosure. [Figure 4A]

[0007] FIG. 4A illustrates example emission wavelengths associated with parallel polarization directions and example emission wavelengths associated with orthogonal polarization directions, according to various exemplary embodiments of the present disclosure. [Figure 4B]

[0008] FIG. 4B illustrates an example of gain associated with the emission wavelengths of FIG. 4A, according to various exemplary embodiments of the present disclosure. [Figure 5A]

[0009] FIG. 5A illustrates an example of an oxide aperture VCSEL with a patterned cavity, where the oxide aperture is above a patterned growth interface, in accordance with various exemplary embodiments of the present disclosure. [Figure 5B]

[0010] FIG. 5B illustrates an example of an oxide aperture VCSEL with a patterned cavity, where the oxide aperture is below the patterned growth interface, in accordance with various exemplary embodiments of the present disclosure. [Figure 6A]

[0011] 1A-1C show examples of combining a patterned resonator with a tunnel junction lithographic aperture by two separate etching and overgrowth steps, according to various exemplary embodiments of the present disclosure. [Figure 6B]

[0012] 1A-1C show examples of combining a patterned resonator with a tunnel junction lithographic aperture by two successive etching steps and one overgrowth step, according to various exemplary embodiments of the present disclosure. [Figure 7A]

[0013] 1A-1C show examples of combining a patterned resonator with a blocking lithographic aperture by two separate etching and overgrowth steps, according to various exemplary embodiments of the present disclosure. [Figure 7B]

[0014] 1A-1C show examples of combining a patterned resonator with a blocking layer lithographic opening by two successive etching steps and one overgrowth step, according to various exemplary embodiments of the present disclosure. [Figure 8]

[0015] 1A-1C illustrate exemplary aperture definition by implantation, according to various exemplary embodiments of the present disclosure. [Figure 9]

[0016] 1A-1C are diagrams illustrating examples of power versus current and polarization characteristics, according to various exemplary embodiments of the present disclosure. [Figure 10]

[0017] 1A-1C show exemplary variations in degree of linear polarization (DOLP) with respect to grating fill factor and grating refractive index contrast, in accordance with various exemplary embodiments of the present disclosure. [Figure 11]

[0018] 1A-1C are diagrams illustrating examples of optical power and polarization characteristics versus operating current, according to various exemplary embodiments of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0004]

[0019] A vertical-cavity surface-emitting laser (VCSEL) is a type of semiconductor laser diode with a laser beam emitting perpendicularly from the top facet, as opposed to conventional edge-emitting semiconductor lasers, which emit from a facet formed by cleaving an individual chip from a wafer. VCSELs are used in a variety of laser products, including computer mice, fiber optic communications, laser printers, Face ID, and smart glasses.

[0005]

[0020] A polarization direction can be encouraged in a laser when the associated threshold current is lower than other polarization directions. Once the threshold gain for the desired polarization direction is reached, gain clamping prevents the threshold gain of the undesired polarized directions from being reached and fixes the polarization. The threshold gain level is controlled by optical gain coefficients and optical losses. Laser polarization control is achieved by inducing polarization-dependent gain coefficients as the first and second mechanisms, and optical losses as the third mechanism. Such polarization-dependent gain and optical losses do not exist by default in VCSELs due to the surface emission and circular geometry of the emitter. Hence, as described in this disclosure, polarization-dependent gain and optical losses can be induced to control the polarization of a VCSEL.

[0006]

[0021] This disclosure describes the control of polarization in VCSELs by patterning anisotropic features within the cavity and performing overgrowth. The patterning introduces birefringent properties into the cavity structure. Birefringence is an optical property of a material that has a refractive index that depends on the polarization and propagation direction of the light. Anisotropic materials are characterized by a physical property that has different values ​​when measured in different directions. Birefringent materials are optically anisotropic.

[0007]

[0022] FIG. 1 illustrates an exemplary VCSEL epitaxial structure with a birefringent cavity, according to various exemplary embodiments of the present disclosure.

[0023] The epitaxy structure depicted in FIG. 1 is formed as follows: In a first growth, a first part of the resonator 105, including a lower distributed Bragg reflector (DBR) 101 and an active region quantum well (QW) 103, is grown on a substrate. Anisotropic features are then lithographically defined on the upper layer of the substructure and shallowly etched using either dry or wet etching. The interface between the lower and upper parts is located within the resonator 105. The substructure includes the lower DBR 101, the active region QW 103, and the upper layer of the substructure 105a. The upper structure includes the lower layer of the upper structure 105b and the upper DBR 107.

[0008]

[0024] In the top-emitting configuration, the top DBR 107 has a lower reflectivity than the bottom DBR 101. In the bottom-emitting configuration, the bottom DBR 101 has a lower reflectivity compared to the top DBR 107. In the bottom-emitting configuration, the laser beam travels through the substrate.

[0009]

[0025] Examples of anisotropic features include linear gratings. Gratings may also be 2D and contain anisotropic features, e.g., ovals / ellipses, rectangles, diamonds, or circles / squares with different periodicity in orthogonal directions. Linear gratings may be periodic, quasi-periodic, or can be a random linear lattice.

[0010]

[0026] The remaining portion of the cavity 105, and the top DBR 107, are overgrown to complete the VCSEL cavity 105 (e.g., a Fabry-Perot cavity). The resulting epitaxial structure may then undergo standard wafer processing to form an oxide-apertured VCSEL emitter. Note that both front-side and back-side emission may be considered with this approach. Different configurations are further described below with respect to Figures 5 and 6.

[0011]

[0027] 2A and 2B show examples of resonators according to various exemplary embodiments of the present disclosure.

[0028] In the first exemplary configuration (FIG. 2A), the overgrown layer is n-thick of the etched layer of the substructure. 0 Compared with the different material refractive index n 1 A planar reflector results in a variation in the optical thickness of the cavity that follows the profile of the etched features.

[0012]

[0029] In a second exemplary configuration (FIG. 2B), the overgrowth layer has the same refractive index as the etched layer of the substructure. If the overgrowth interface is close to one of the reflectors, the etched feature is transferred to the reflector profile. Both configurations result in a variation in the optical thickness of the resonator that follows the etched profile. Due to the variation in the optical thickness of the resonator, the local refractive index can be shifted by Δn. As a result, the refractive index profile follows the etched feature.

[0013]

[0030] The anisotropic profile of the refractive index exhibits an equivalent effective refractive index that is anisotropic, i.e. birefringent. The refractive index parallel to the grating, n ∥ (slow axis) is the refractive index n perpendicular to the grating ⊥ (fast axis). The difference between the refractive index of the slow axis and the refractive index of the fast axis (n ∥ -n ⊥ ) is Δn. The ratio (n ∥ -n ⊥ ) / n 0 defines the birefringence strength, which depends on the grating geometry and the grating refractive index contrast Δn / n 0 Depends on.

[0014]

[0031] FIG. 3A illustrates an example variation of effective refractive index with respect to grating fill factor, according to various exemplary embodiments of the present disclosure.

[0032] FIG. 3B illustrates an exemplary variation of birefringence intensity with respect to grating fill factor, according to various exemplary embodiments of the present disclosure.

[0015]

[0033] The fill factor (FF) is defined as the ratio of the grating ridge width to the grating period. 0 ), the birefringence is maximum for a fill factor of about 0.5. The birefringence strength is estimated to be about 0.02%, which is high enough to take into account the gain clamping mechanism.

[0016]

[0034] In a cavity with a birefringent medium, light polarized parallel and perpendicular to the slow axis propagates due to different refractive indices. Figure 4A shows examples of emission wavelengths associated with parallel polarization directions and with perpendicular polarization directions, according to various exemplary embodiments of the present disclosure. Considering that the cavity thickness is the same for both directions, the two directions correspond to two different emission wavelengths λ, as illustrated in Figure 4A. ∥ (slow axis) and λ ⊥ (fast axis). Optical thickness is the product of physical thickness and refractive index. Optical thickness determines the emission wavelength.

[0017]

[0035] FIG. 4B shows an example of gain associated with emission wavelength, according to various exemplary embodiments of the present disclosure. Quantum wells (QWs) typically provide gain that varies with wavelength. Combining the polarization-dependent emission wavelength and the wavelength-dependent gain results in a polarization-dependent gain as shown in FIG. 4B. The polarization direction associated with the highest gain coefficient is favored. The favored polarization direction by this first mechanism depends on the gain variation with wavelength. For wavelengths greater than the wavelength at the gain maximum, the gain decreases with increasing wavelength. Thus, polarization along the fast axis (i.e. perpendicular to the grating direction) is favored. Thus, in the first mechanism, the polarization direction is selected by the polarization-dependent gain.

[0018]

[0036] In the second mechanism, resonators with birefringent properties can exhibit a confinement factor that depends on the polarization direction. Light polarized along the fast axis tends to be less confined compared to light polarized along the slow axis. In VCSELs, the transverse gain profile is not constant across the aperture due to current crowding and spatial hole burning. Thus, light polarized perpendicular to the grating, which is slightly less confined, receives more gain and is encouraged.

[0019]

[0037] In the third scheme, a linear grating couples light from the vertical direction to the lateral direction. The coupling efficiency is polarization dependent, and light polarized parallel to the grating ridge direction is more likely to be coupled. This results in an extra cavity loss for parallel polarizations. Orthogonal polarizations are thus favored. This scheme has the advantage of being independent of the gain curve. Thus, this third scheme uses polarization dependent optical losses.

[0020]

[0038] Polarization control by anisotropic patterning of the cavity can be combined with different fabrication methods to define the electrical and optical aperture of the VCSEL. The VCSEL aperture can be defined by oxidation, implantation or lithographically. Lithographic aperture VCSELs can be realized with subsequent etching and overgrowth of tunnel junctions or blocking layers.

[0021]

[0039] Figures 5A and 5B present two configurations of patterned resonators with oxide apertures. For both configurations, the fabrication begins with the formation of an epitaxial structure with patterned resonators as presented in paragraph 23. The epitaxial structure includes a high aluminum concentration layer. During oxidation of the structure, this layer oxidizes at a higher rate compared to the rest of the structure. The non-oxidized parts of the layer form an aperture that confines the flow of the operating current and the laser beam.

[0022]

[0040] 5A shows an example of an oxide aperture VCSEL with a patterned cavity, where the oxide aperture is above the patterned growth interface, according to various exemplary embodiments of the present disclosure. In FIG. 5A, the oxide layer forming the aperture is located above the patterned growth interface.

[0023]

[0041] 5B shows an example of an oxide aperture VCSEL with a patterned cavity, where the oxide aperture is below the patterned growth interface, according to various exemplary embodiments of the present disclosure. In FIG. 5B, the oxide layer is below the patterned growth interface and is part of the lower epitaxial structure.

[0024]

[0042] 6A and 6B present how to combine a patterned VCSEL resonator with a tunnel junction lithographic aperture. Subsequent etching and overgrowth steps allow the insertion of a buried tunnel junction on a specific area. The lithographically defined area with the tunnel junction is significantly more conductive than the area without the tunnel junction, which allows lateral electrical confinement and defines the VCSEL aperture. Two process flows are possible to introduce anisotropic patterning of the resonator. It is Noh.

[0025]

[0043] FIG. 6A shows an example of combining a patterned resonator with a tunnel junction lithographic aperture by two separate etching and overgrowth steps according to various exemplary embodiments of the present disclosure. In the process flow presented in FIG. 6A, aperture definition and grating patterning are performed in separate etching and growth steps. The process flow starts by growing a lower epitaxial structure, including a lower DBR and an active region, and terminated by a tunnel junction layer. After a first etching step, the remaining part of the tunnel junction defines the aperture. A spacer layer is overgrown. A grating for polarization control is patterned in the spacer layer. Finally, an upper epitaxial structure, including an upper DBR, is overgrown.

[0026]

[0044] FIG. 6B shows an example of combining a patterned resonator with a tunnel junction lithographic aperture by two successive etching steps and one overgrowth step according to various exemplary embodiments of the present disclosure. In the second process flow presented in FIG. 6B, the aperture and the grating are defined in two successive etching steps and one overgrowth. The process flow allows the number of overgrowths to be reduced from two to one. In this case, the lower epitaxial structure is terminated by the tunnel junction layer and the spacer layer. The first etch defined the aperture down to the bottom of the tunnel junction. Then, a shallower etch defines the grating for polarization control. Finally, the upper epitaxial structure is overgrown.

[0027]

[0045] 7A and 7B present how to introduce a blocking layer lithographic opening in a patterned resonator. Subsequent etching and overgrowth steps allow the insertion of a blocking layer on specific areas in the epitaxial structure. The lithographically defined areas with the blocking layer are significantly more electrically resistive than areas without the blocking layer, which allows lateral electrical confinement and defines the VCSEL opening. Two process flows are possible to introduce anisotropic patterning of the resonator.

[0028]

[0046] FIG. 7A shows an example of combining a patterned resonator with a blocking layer lithographic aperture by two separate etching and overgrowth steps according to various exemplary embodiments of the present disclosure. In the process flow presented in FIG. 7A, aperture definition and grating patterning are performed in separate etching and growth steps. The process flow starts by growing a lower epitaxial structure, including a lower DBR and an active region, and terminated by a blocking layer. A first etching step of the blocking layer defines the aperture. A spacer layer is overgrown. A grating for polarization control is patterned in the spacer layer. Finally, an upper epitaxial structure, including an upper DBR, is overgrown.

[0029]

[0047] FIG. 7B shows an example of combining a patterned resonator with a blocking lithographic aperture by two successive etching steps and one overgrowth step according to various exemplary embodiments of the present disclosure. In the second process flow presented in FIG. 7B, the aperture and the grating are defined in two successive etching steps and one overgrowth. The process flow allows the number of overgrowths to be reduced from two to one. In this case, the lower epitaxial structure is terminated by a blocking layer and a spacer layer. A first etch defined the aperture down to the bottom of the blocking layer. Then a shallower etch defines the grating. Finally, the upper epitaxial structure is overgrown.

[0030]

[0048] Figure 8 shows an example of combining a patterned resonator with an aperture defined by ion implantation. The fabrication starts with the formation of an epitaxial structure with a patterned resonator as presented in paragraph 23 (above). In the following steps, ion implantation electrically isolates regions of the epitaxial structure. The non-implanted regions confine the flow of operating current and define the VCSEL aperture.

[0031]

[0049] 9 shows an example of power versus current and polarization characteristics according to various exemplary embodiments of the present disclosure. The three graphs in FIG. 9 represent optical power, DOLP, and azimuth angle.

[0032]

[0050] FIG. 9 shows the impact of introducing a linear grating into the cavity on the optical versus current and polarization properties. In the absence of a grating, the degree of linear polarization (DOLP) reaches a high value at threshold, 95% (polarization extinction ratio (PER) 13 dB). This is attributed to single-mode operation. As the operating current is increased and higher order modes emerge, the DOPL decreases significantly, indicating poor polarization control. With the presence of a linear grating in the cavity, the DOLP is maintained at >99% (PER >20 dB) from threshold until the device starts to roll over. Azimuth angle measurements show that the direction of linear polarization remains perpendicular to the grating direction. This demonstrates the effective linear polarization stability as a result of the linear grating in the cavity.

[0033]

[0051] 10 illustrates an example variation of DOLP with respect to grating fill factor and grating refractive index contrast according to various exemplary embodiments of the present disclosure. The grating refractive index contrast is estimated from the emission wavelength difference from the unetched (FF=1) and maximally etched (FF=0) resonator emitters and using the following relationship:

[0034] Δn / n 0 =Δλ / λ 0

[0052] Thus, the deeper the etch depth, the larger the grating index contrast and, consequently, the stronger the birefringence intensity. Effective control of polarization is demonstrated for grating fill factors ranging from 0.2 to 0.3 when the grating index contrast is 2%. For a grating index contrast of 3%, the range of fill factors for stable polarization is wider, from 0.1 to 0.5. As the grating index contrast becomes larger, the manufacturing tolerances on the grating fill factor are relaxed.

[0035]

[0053] FIG. 11 shows an example of optical power and polarization characteristics versus operating current according to various exemplary embodiments of the present disclosure. The three graphs in FIG. 11 represent optical power, DOLP, and azimuth angle. FIG. 11 shows the change in optical power and polarization characteristics versus operating current under backside temperatures ranging from 25° C. to 75° C. for a VCSEL device with a grating. The polarization remains stable in terms of intensity (DOLP>99%, PER>20 dB) and direction (perpendicular to the grating) throughout the entire operating range investigated. This demonstrates the robustness of polarization control by cavity patterning. The exemplary device reference in FIG. 11 is a 6 μm diameter VCSEL with a cavity grating having a 1 μm period and a fill factor of 0.2.

[0036]

[0054] Although the present method and / or system has been described with reference to certain specific embodiments, it will be understood by those skilled in the art that various modifications can be made and equivalents substituted without departing from the scope of the present method and / or system. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the disclosure without departing from its scope. Thus, it is not intended that the present method and / or system be limited to the particular embodiments disclosed, but rather that the present method and / or system be modified in accordance with the accompanying drawings. It is intended to include all embodiments that fall within the scope of the appended claims. [Explanation of symbols]

[0037] 101 Lower distributed Bragg reflector (DBR), lower DBR 103 Active region quantum well (QW), active region QW 105 Resonator 105a Upper layer of substructure 105b Lower layer of superstructure 107 Upper DBR

Claims

1. 1. A method of forming a laser structure, comprising: growing a lower distributed Bragg reflector (DBR) and a first portion of a cavity on a substrate to form a substructure including a plurality of layers; Etching one or more features on an upper layer of the substructure to create a patterned growth interface; overgrowing the remainder of the cavity and a top DBR on the patterned growth interface to form an epitaxial structure; forming one or more openings in the epitaxial structure; The method includes:

2. 10. The method of claim 1, wherein the first portion of the resonator comprises a plurality of active region quantum wells.

3. 2. The method of claim 1, wherein the step of etching is one of a dry etch and a wet etch.

4. 10. The method of claim 1, wherein the one or more features are lithographically defined sub-wavelength features.

5. The method of claim 1 , wherein the one or more features are a linear grid.

6. 10. The method of claim 1, wherein the overgrowth step produces a layer having a different material index of refraction than the etched layer of the substructure.

7. The method of claim 1 , wherein the one or more features are transferred to a profile of the top DBR.

8. 10. The method of claim 1, comprising controlling the strength of birefringence through selection of one or more features.

9. 2. The method of claim 1 , the one or more features include a grating characterized by a grating ridge width and a grating period; The method includes controlling birefringence strength through a ratio of the grating ridge width to the grating period. method.

10. 2. The method of claim 1, wherein the step of forming one or more openings comprises growing an oxide layer above the patterned growth interface as part of an upper growth of the epitaxial structure.

11. 2. The method of claim 1, wherein the step of forming one or more openings comprises growing an oxide layer below the patterned growth interface as part of the substructure of the epitaxial structure.

12. 10. The method of claim 1, comprising introducing a tunnel junction lithographic aperture into a patterned vertical cavity surface emitting laser (VCSEL) cavity.

13. 1. A method of forming a laser structure, comprising: growing a lower distributed Bragg reflector (DBR) and a first portion of a cavity on a substrate to form a substructure including a plurality of layers; creating a lithographic opening on said substructure; overgrowing a spacer layer over said lithographic opening; etching one or more features in the spacer layer to form a patterned growth interface; overgrowing a top DBR on the patterned growth interface to form an epitaxial structure. The method includes:

14. 14. The method of claim 13, wherein the lithographic opening is a tunnel junction.

15. 14. The method of claim 13, comprising controlling the strength of the birefringence by selection of one or more features.

16. 14. The method of claim 13, the one or more features include a grating characterized by a grating ridge width and a grating period; The method includes controlling birefringence strength through a ratio of the grating ridge width to the grating period. method.

17. 1. A method of forming a laser structure, comprising: growing a lower distributed Bragg reflector (DBR) and a first portion of a cavity on a substrate to form a substructure including a plurality of layers; creating a lithographic opening on said substructure; growing a spacer layer over the lithographic opening; defining the lithographic openings by etching through the spacer layer; etching one or more features in the spacer layer to form a patterned growth interface; overgrowing a top DBR on the patterned growth interface to form an epitaxial structure. The method includes:

18. 20. The method of claim 17, comprising controlling the strength of the birefringence by selection of one or more features.

19. 20. The method of claim 17, the one or more features include a grating characterized by a grating ridge width and a grating period; The method includes controlling birefringence strength through a ratio of the grating ridge width to the grating period. method.

20. 20. The method of claim 17, wherein the lithographic opening is a tunnel junction.

21. 10. The method of claim 1, wherein the bottom DBR has a lower reflectivity compared to the top DBR, thereby enabling a bottom-emitting configuration.

22. 14. The method of claim 13, wherein the bottom DBR has a lower reflectivity compared to the top DBR, thereby enabling a bottom-emitting configuration.

23. 20. The method of claim 17, wherein the bottom DBR has a lower reflectivity compared to the top DBR, thereby enabling a bottom-emitting configuration.

24. The method of claim 1 , wherein the one or more features are anisotropic features.

25. The method of claim 13 , wherein the one or more features are anisotropic features.

26. 20. The method of claim 17, wherein the one or more features are anisotropic features.

27. The method of claim 1 , wherein the one or more openings include an implant.

28. The method of claim 1 , wherein the one or more openings comprise blocking layer lithographic openings.

29. The method of claim 1 , wherein the remaining portion of the cavity comprises a plurality of active region quantum wells.

Images