Manufacturing method of the mounting table

Abstract

To improve the in-plane uniformity of the thermal resistance of a mounting table.SOLUTION: A manufacturing method of a mounting table includes steps of: adhering a suction portion and a base with an adhesive; specifying the in-plane distribution of the thermal resistance of an adhesive layer that adheres the suction portion and the base; determining a processing condition of the surface of the suction portion so as to reduce the variation in the thermal resistance in the plane on which the substrate of the mounting table is placed on the basis of the in-plane distribution of the heat resistance of the specified adhesive layer; and processing the surface of the suction portion on the basis of the determined processing condition.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present disclosure relates to a manufacturing method of a mounting table, a mounting table, and a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a mounting table having an electrostatic attraction layer bonded onto an electrode block having a flow path for a heat exchange medium. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-162618 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for improving the in-plane uniformity of the thermal resistance of a mounting table. [Means for solving the problem]

[0005] A method for manufacturing a mounting table according to one aspect of the present disclosure is a method for manufacturing a mounting table having a flat suction part that electrostatically suctions a substrate and a flat base bonded to each other. The method for manufacturing the mounting table includes the steps of bonding the suction part and the base with an adhesive, specifying an in-plane distribution of thermal resistance of an adhesive layer that bonds the suction part and the base, determining processing conditions for the surface of the suction part based on the specified in-plane distribution of thermal resistance of the adhesive layer so as to reduce variation in thermal resistance within the surface of the mounting table on which the substrate is placed, and processing the surface of the suction part based on the determined processing conditions. Effect of the Invention

[0006] According to the present disclosure, it is possible to improve the in-plane uniformity of the thermal resistance of the mounting table. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus according to an embodiment. [Diagram 2] FIG. 2 is a schematic cross-sectional view showing an example of the configuration of the mounting table according to the embodiment. [Diagram 3] FIG. 3 is a flowchart showing an example of a flow of the manufacturing method of the mounting table according to the embodiment. [Figure 4] FIG. 4 is a diagram showing an example of an in-plane distribution of the thickness of the electrostatic chuck and the base according to the embodiment. [Diagram 5] FIG. 5 is a diagram showing an example of an in-plane distribution of the thickness of the mounting table according to the embodiment. [Figure 6] FIG. 6 is a diagram illustrating an example of the mounting table according to the embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, embodiments of the method for manufacturing a mounting table, the mounting table, and the substrate processing apparatus disclosed in the present application will be described in detail with reference to the drawings. Note that the disclosed methods for manufacturing a mounting table, the mounting table, and the substrate processing apparatus are not limited to the embodiments.

[0009] There are known substrate processing apparatuses that perform substrate processing such as film formation and etching on substrates such as semiconductor wafers (hereinafter referred to as "wafers"). Some substrate processing apparatuses electrostatically attract the substrate using a mounting table. Such a mounting table is configured by bonding a flat-plate attracting portion, such as an electrostatic chuck that electrostatically attracts the substrate, to a flat-plate base.

[0010] In a substrate processing apparatus, if the temperature uniformity of the substrate is poor, the uniformity of the substrate processing within the substrate surface decreases. For example, in a semiconductor manufacturing process, if the temperature uniformity of a wafer is poor, the film formation characteristics and etching characteristics within the wafer surface become non-uniform, resulting in a decrease in the yield of devices manufactured on the wafer.

[0011] To improve the in-plane temperature uniformity of the substrate, the in-plane thermal resistance of the mounting table must be made uniform. However, because the thickness of the adhesive layer that bonds the suction part and the base table cannot be made uniform, the in-plane uniformity of the thermal resistance of the mounting table decreases.

[0012] Therefore, a new technology for improving the in-plane uniformity of the thermal resistance of the mounting table is desired.

[0013] [Embodiment] [Device configuration] An embodiment will be described. In the following, an example will be described in which the substrate processing apparatus of the present disclosure is a plasma processing apparatus that performs plasma processing. FIG. 1 is a schematic cross-sectional view showing an example of a substrate processing apparatus 1 according to an embodiment. The substrate processing apparatus 1 according to the embodiment is, for example, a capacitively coupled plasma (CCP) type plasma etching apparatus equipped with parallel plate electrodes. The substrate processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, an RF (Radio Frequency) power supply unit 30, and an exhaust system 40. The substrate processing apparatus 1 also includes a mounting table 11 and an upper electrode shower head 12. The substrate processing apparatus 1 also includes a control unit 51.

[0014] The plasma processing chamber 10 is made of a material such as aluminum and is formed, for example, in a substantially cylindrical shape. The inner wall surface of the plasma processing chamber 10 is anodized. The plasma processing chamber 10 is also safety grounded. The mounting table 11 is disposed in a lower region of a plasma processing space 10s in the plasma processing chamber 10. The upper electrode showerhead 12 is disposed above the mounting table 11 and can function as a part of the ceiling of the plasma processing chamber 10.

[0015] The mounting table 11 has a substrate W mounted on an upper surface thereof. The mounting table 11 is configured to support the substrate W in the plasma processing space 10s. In one embodiment, the mounting table 11 includes a base 111, an electrostatic chuck 112, and an edge ring 113. The base 111 is formed in a flat plate shape from a conductive material such as aluminum. The base 111 functions as a lower electrode. The electrostatic chuck 112 is formed in a flat plate shape. The electrostatic chuck 112 is disposed on the base 111 and configured to support the substrate W on the upper surface of the electrostatic chuck 112. The edge ring 113 is disposed on the peripheral upper surface of the base 111 so as to surround the substrate W. Although not shown, in one embodiment, the mounting table 11 may include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 112 and the substrate W to a target temperature. The temperature adjustment module may include a heater, a flow path, or a combination thereof. A temperature control fluid such as a refrigerant or a heat transfer gas flows through the flow path.

[0016] The mounting table 11 is supported by a support member 114 provided on the bottom surface of the plasma processing chamber 10. The support member 114 is made of an insulating material. The plasma processing chamber 10 and the mounting table 11 are insulated from each other by the support member 114.

[0017] The upper electrode showerhead 12 is supported on the upper part of the plasma processing chamber 10 via an insulating shielding member (not shown). The upper electrode showerhead 12 has an electrode plate 14 and an electrode support 15. The lower surface of the electrode plate 14 faces the plasma processing space 10s. A plurality of gas ejection ports 14a are formed in the electrode plate 14. The electrode plate 14 is made of, for example, a material containing silicon.

[0018] The electrode support 15 is made of a conductive material such as aluminum. The electrode support 15 supports the electrode plate 14 from above in a detachable manner. The electrode support 15 is safety grounded. The electrode support 15 may have a water-cooling structure (not shown). A diffusion chamber 15a is formed inside the electrode support 15. A plurality of gas circulation ports 15b communicating with the gas discharge ports 14a of the electrode plate 14 extend downward (toward the mounting table 11) from the diffusion chamber 15a. The electrode support 15 is provided with a gas inlet 15c for introducing a process gas into the diffusion chamber 15a, and the gas inlet 15c is connected to a gas supply unit 20 via a pipe.

[0019] The upper electrode showerhead 12 is configured to supply one or more process gases from the gas supply 20 to the plasma processing space 10s. In one embodiment, the upper electrode showerhead 12 is configured to supply one or more process gases from the gas inlet 15c through the gas diffusion chamber 12b, the gas outlet 12c, and the gas outlet 14a to the plasma processing space 10s.

[0020] The gas supply 20 may include one or more gas sources 21 and one or more flow controllers 22. In one embodiment, the gas supply 20 is configured to supply one or more process gases from respective gas sources 21 through respective flow controllers 22 to the gas inlet 15c. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include one or more flow modulation devices to modulate or pulse the flow rate of one or more process gases.

[0021] The RF power supply 30 is configured to supply RF power, e.g., one or more RF signals, to one or more electrodes, such as the base 111, the upper electrode showerhead 12, or both the base 111 and the upper electrode showerhead 12. Thus, plasma is generated from one or more process gases supplied to the plasma processing space 10s. Thus, the RF power supply 30 may function as at least a part of a plasma generating unit configured to generate plasma from one or more process gases in the plasma processing chamber 10. In one embodiment, the RF power supply 30 includes two RF generating units 31a, 31b and two matching circuits 32a, 32b. In one embodiment, the RF power supply 30 is configured to supply a first RF signal from the first RF generating unit 31a to the base 111 via the first matching circuit 32a. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

[0022] In one embodiment, the RF power supply unit 30 is configured to supply a second RF signal from the second RF generating unit 31b to the base 111 via the second matching circuit 32b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generating unit may be used in place of the second RF generating unit 31b.

[0023] Further, although not shown, other embodiments are contemplated in the present disclosure. For example, the RF power supply 30 may be configured to supply a first RF signal from an RF generator to the base 111, a second RF signal from another RF generator to the base 111, and a third RF signal from yet another RF generator to the base 111. Additionally, in other alternative embodiments, a DC voltage may be applied to the upper electrode showerhead 12.

[0024] Still further, in various embodiments, one or more RF signals (i.e., the first RF signal, the second RF signal, etc.) may be pulsed or modulated in amplitude. Amplitude modulation may include pulsing the RF signal amplitude between an on state and an off state, or between two or more different on states.

[0025] The exhaust system 40 may be connected to, for example, an exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

[0026] An opening 10a for loading and unloading the substrate W is provided in a sidewall of the plasma processing chamber 10. The opening 10a can be opened and closed by a gate valve 10b.

[0027] The control unit 51 processes computer-executable instructions that cause the substrate processing apparatus 1 to execute various processes described in the present disclosure. The control unit 51 may be configured to control each element of the substrate processing apparatus 1 to execute various processes described herein. The control unit 51 may include, for example, a computer. The computer may include, for example, a processing unit (CPU: Central Processing Unit) 511, a storage unit 512, and a communication interface 513. The processing unit 511 may be configured to perform various control operations based on a program stored in the storage unit 512. The storage unit 512 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 513 may communicate with other devices such as other substrate processing apparatuses 1 via a communication line such as a LAN (Local Area Network).

[0028] Next, a configuration of the mounting table 11 according to the embodiment will be described. Fig. 2 is a schematic cross-sectional view showing an example of the configuration of the mounting table 11 according to the embodiment.

[0029] The mounting table 11 includes a base 111 and an electrostatic chuck 112 .

[0030] The electrostatic chuck 112 is formed in a disk shape with a flat upper surface. A mounting surface 11a on which the substrate W is placed is formed on the upper surface of the electrostatic chuck 112. The electrostatic chuck 112 has a function of electrostatically attracting the substrate W. For example, the electrostatic chuck 112 is configured by interposing an electrode 112b between dielectric bodies 112a such as ceramics. A DC power supply (not shown) is connected to the electrode 112b via wiring (not shown). The electrostatic chuck 112 electrostatically attracts the substrate W by Coulomb force generated by applying a DC voltage from the DC power supply to the electrode 112b.

[0031] The base 111 is formed in a flat plate shape from a conductive material. A flow path 111a is formed inside the base 111. A chiller unit is connected to the flow path 111a via a pipe (not shown). The base 111 is configured so that it can be controlled to a predetermined temperature by the chiller unit circulating a refrigerant, for example, cooling water or an organic solvent such as Galden, through the flow path 111a.

[0032] The mounting table 11 is configured by bonding a base table 111 and an electrostatic chuck 112 with an adhesive. An adhesive layer 115 that bonds the base table 111 and the electrostatic chuck 112 together is shown in FIG.

[0033] As described above, in the substrate processing apparatus 1, if the in-plane temperature uniformity of the substrate W is poor, the uniformity of the substrate processing within the surface of the substrate W decreases. For example, in plasma etching, if the in-plane temperature uniformity of the substrate W is low, the etching characteristics within the surface of the substrate W become non-uniform, and the yield of devices manufactured on the substrate W decreases.

[0034] In a process using plasma, generally, the substrate W is adsorbed to the mounting table 11, and the plasma processing is performed while the heat from the plasma to the substrate W is propagated to the mounting table 11 and released. Therefore, in order to increase the uniformity of the temperature of the substrate W, the uniformity of the thermal resistance in the surface of the mounting table 11 must be increased. In order to increase the uniformity of the thermal resistance in the surface of the mounting table 11, it is necessary to increase the uniformity of the thickness of the adhesive layer 115. However, it is difficult to bond the electrostatic chuck 112 and the base 111 so that the thickness of the adhesive layer 115 is uniform. The mounting table 11 has low uniformity in the thickness of the adhesive layer 115 in the surface. For this reason, the substrate processing apparatus 1 does not have a stable yield of devices. In addition, since the thickness of the adhesive layer 115 varies greatly from one apparatus to another, the etching characteristics differ from one substrate processing apparatus to another.

[0035] [Flow of manufacturing the mounting table 11] Therefore, in this embodiment, the mounting table 11 is manufactured by the method described below. FIG. 3 is a flowchart showing an example of a flow of a manufacturing method of the mounting table 11 according to the embodiment. FIG. 3 illustrates an example of a procedure for manufacturing the mounting table 11. In this embodiment, the mounting table 11 is manufactured by the procedure shown in the flowchart in FIG. An example of a manufacturing method of the mounting table 11 will be described below with reference to FIGS. 4 to 6.

[0036] First, the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111 is measured (step S10). For example, three-dimensional measurement is performed on the electrostatic chuck 112 and the base 111, respectively, to measure the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111. FIG. 4 is a diagram showing an example of the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111 according to the embodiment. FIG. 4 shows thicknesses d11 to d13 at positions P11 to P13 in the region corresponding to the mounting surface 11a as an example of the in-plane distribution of the thickness of the electrostatic chuck 112. FIG. 4 also shows thicknesses d21 to d23 at positions P21 to P23 in the region corresponding to the mounting surface 11a as an example of the in-plane distribution of the base 111.

[0037] Next, the electrostatic chuck 112 and the base 111 are bonded together with an adhesive (step S11).

[0038] Then, the in-plane distribution of the thermal resistance of the adhesive layer 115 that bonds the electrostatic chuck 112 and the base 111 is specified. Specifically, first, the in-plane distribution of the thickness of the mounting table 11 to which the electrostatic chuck 112 and the base 111 are bonded is measured (step S12). For example, a three-dimensional measurement of the mounting table 11 is performed to measure the in-plane distribution of the thickness of the mounting table 11. FIG. 5 is a diagram showing an example of the in-plane distribution of the thickness of the mounting table 11 according to the embodiment. In FIG. 5, thicknesses d31 to d33 at positions P31 to P33 in the region corresponding to the mounting surface 11a are shown as the thickness of the mounting table 11. Then, based on the measured in-plane distribution of the thickness of the mounting table 11 and the in-plane distribution of the thicknesses of the electrostatic chuck 112 and the base 111, the in-plane distribution of the thickness of the adhesive layer 115 is specified (step S13). The thickness of the mounting table 11 is a value obtained by adding the thickness of the electrostatic chuck 112, the thickness of the base 111, and the thickness of the adhesive layer 115. Therefore, the thickness distribution of the adhesive layer 115 is determined by subtracting the thicknesses of the electrostatic chuck 112 and the base 111 from the thickness of the mounting table 11 measured at each corresponding position. FIG. 5 shows an example of the thickness distribution of the adhesive layer 115 according to the embodiment. For example, the positions P31 to P33 of the mounting table 11 overlap with the positions P11 to P13 of the electrostatic chuck 112 and the positions P21 to P23 of the base 111, and the positions P11 to P13 and the positions P21 to P23 of the base 111 correspond to each other. Note that in FIG. 5 and FIG. 6, the positions P11 to P13 and P21 to P23 are slightly shifted from the positions P31 to P33 for easy identification. In this case, the thicknesses d41 to d43 of the adhesive layer 115 at the positions P31 to P33 are determined by calculating them according to the following formulas (1) to (3).

[0039] d41 = d31-d21-d11 (1) d42 = d32-d22-d12 (2) d41 = d31-d21-d11 (3)

[0040] In addition, when the processing precision of the electrostatic chuck 112 and the base 111 is high and the thicknesses of the electrostatic chuck 112 and the base 111 can be regarded as the design thicknesses, it is not necessary to measure the thicknesses of the electrostatic chuck 112 and the base 111. The thickness of the adhesive layer 115 may be determined by subtracting the design thicknesses of the electrostatic chuck 112 and the base 111 from the measured thickness of the mounting table 11.

[0041] Based on the specified in-plane distribution of the thickness of the adhesive layer 115 and thermal resistance data showing the relationship between the thickness of the adhesive layer 115 and the thermal resistance, the in-plane distribution of the thermal resistance of the adhesive layer 115 is specified (step S14). For example, the adhesive layer 115 is formed in advance with various thicknesses, the thermal resistance of the adhesive layer 115 is measured at each thickness, thermal resistance data showing the relationship between the thickness of the adhesive layer 115 and the thermal resistance is generated, and stored in an information processing device such as a computer. The information processing device specifies the in-plane distribution of the thermal resistance of the adhesive layer 115 by using the thermal resistance data to find the thermal resistance corresponding to the thickness of the adhesive layer 115 for the in-plane distribution of the thickness of the adhesive layer 115.

[0042] Based on the specified in-plane distribution of the thermal resistance of the adhesive layer 115, processing conditions for the surface of the electrostatic chuck 112 are determined so as to reduce the variation in thermal resistance within the mounting surface 11a of the mounting table 11 (step S15). The substrate W is mounted on the electrostatic chuck 112. The electrostatic chuck 112 can change the thermal resistance between the substrate W and the electrostatic chuck 112 by changing the shape of the surface to change the contact area with the substrate W. For example, when pillars called dots are formed on the surface of the electrostatic chuck 112, the thermal resistance can be adjusted by adjusting the dot diameter and dot height. For example, the dot formation process includes mask creation, resist coating, exposure, development, blasting, and surface brush processing. The dot diameter and dot height can be changed by changing the processing conditions, for example, as follows. (1) A mask with different dot diameters for each area is used. (2) Vary the exposure time for each area. (3) Vary the blast time for each area. (4) The surface brush processing conditions (treatment time, rotation speed, brush pressure) are changed for each area.

[0043] For example, electrostatic chucks 112 with various surface shapes are formed in advance, and the thermal resistance of each electrostatic chuck 112 is measured to generate shape data indicating the relationship between the surface shape and the thermal resistance, which is then stored in an information processing device such as a computer. The information processing device uses the shape data to determine processing conditions for the surface of the electrostatic chuck 112 so as to reduce the variation in thermal resistance within the mounting surface 11a of the mounting table 11, with respect to the in-plane distribution of the thermal resistance of the adhesive layer 115. For example, the processing conditions are determined so that the dots are large or the dots are densely arranged in areas where the thermal resistance of the adhesive layer 115 is large, and the dots are small or the dots are densely arranged in areas where the thermal resistance of the adhesive layer 115 is small.

[0044] Here, the thermal resistance of the mounting table 11 is a value obtained by adding up the thermal resistance of the electrostatic chuck 112, the thermal resistance of the base 111, and the thermal resistance of the adhesive layer 115. When the thicknesses of the electrostatic chuck 112 and the base 111 are substantially constant in the region corresponding to the mounting surface 11a, the variation in thermal resistance within the mounting surface 11a of the mounting table 11 is mainly due to the variation in thermal resistance within the surface of the adhesive layer 115. When the thicknesses of the electrostatic chuck 112 and the base 111 are substantially constant in the region corresponding to the mounting surface 11a, the processing conditions for the surface of the electrostatic chuck 112 are determined so as to reduce the variation in thermal resistance within the surface of the adhesive layer 115. On the other hand, when there is a variation in the thickness of the electrostatic chuck 112 and the base 111 in the region corresponding to the mounting surface 11a, the variation in the thermal resistance in the mounting surface 11a of the mounting table 11 is due to a combined effect of the variation in the thermal resistance in the surface of the electrostatic chuck 112, the base 111, and the adhesive layer 115. In this case, the thermal resistances of the electrostatic chuck 112 and the base 111 are obtained from the thicknesses of the electrostatic chuck 112 and the base 111, respectively. Then, in the region corresponding to the mounting surface 11a, the thermal resistances of the electrostatic chuck 112, the base 111, and the adhesive layer 115 are added together to obtain the in-plane distribution of the thermal resistance of the mounting table 11. Then, the processing conditions for the surface of the electrostatic chuck 112 are determined so as to reduce the variation in the thermal resistance in the surface of the mounting table 11.

[0045] Furthermore, if the variation in thermal resistance within the surface of the mounting table 11 is small but the individual difference in thermal resistance is large for each mounting table 11 manufactured, the substrate processing apparatus 1 will show different etching characteristics for each individual mounting table. Therefore, the processing conditions for the surface of the electrostatic chuck 112 may be determined so that the thermal resistance within the surface of the mounting table 11 falls within a predetermined allowable range. For example, a reference value for the thermal resistance of the adhesive layer 115 and the electrostatic chuck 112 is determined in advance by design or the like, and the allowable range of the thermal resistance is determined based on the reference value according to the plasma processing performed in the substrate processing apparatus 1. Then, using the shape data, the processing conditions for the surface of the electrostatic chuck 112 are determined so that the thermal resistance obtained by adding the thermal resistance of the adhesive layer 115 and the thermal resistance of the surface of the electrostatic chuck 112 falls within the allowable range based on the in-plane distribution of the thermal resistance of the adhesive layer 115.

[0046] Based on the determined processing conditions, the surface of the electrostatic chuck 112 is processed (step S16). For example, according to the determined processing conditions, mask production, resist coating, exposure, development, blasting, and surface brush processing are performed to form dots. FIG. 6 is a diagram showing an example of the mounting table 11 according to the embodiment. In FIG. 6, dots are formed on the surface of the electrostatic chuck 112 by processing. The mounting table 11 manufactured in this manner can reduce individual differences in thermal resistance of the mounting table 11 even when the individual differences in thickness of the adhesive layer 115 are large. By arranging the mounting tables 11 manufactured in this manner, the substrate processing apparatus 1 can suppress differences in etching characteristics between apparatuses.

[0047] As described above, the manufacturing method of the mounting table 11 according to the embodiment includes a step of bonding the electrostatic chuck 112 (attraction portion) and the base 111 with an adhesive (step S11), a step of specifying an in-plane distribution of thermal resistance of the adhesive layer 115 that bonds the electrostatic chuck 112 and the base 111 (steps S12 to S14), a step of determining processing conditions for the surface of the electrostatic chuck 112 based on the specified in-plane distribution of thermal resistance of the adhesive layer 115 so as to reduce the variation in thermal resistance in the surface (mounting surface 11a) of the mounting table 11 on which the substrate W is placed (step S15), and a step of processing the surface of the electrostatic chuck 112 based on the determined processing conditions (step S16). As a result, the manufacturing method of the mounting table 11 according to the embodiment can improve the in-plane uniformity of the thermal resistance of the mounting table 11.

[0048] The manufacturing method of the mounting table 11 according to the embodiment further includes a step (step S10) of measuring the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111 before the bonding step (step S11). The step of specifying the in-plane distribution of the thermal resistance includes a step (step S12) of measuring the in-plane distribution of the thickness of the mounting table 11 bonded to the electrostatic chuck 112 and the base 111, a step (step S13) of specifying the in-plane distribution of the thickness of the adhesive layer 115 based on the measured in-plane distribution of the thickness of the mounting table 11 and the in-plane distribution of the thickness of the electrostatic chuck 112 and the base 111, and a step (step S14) of specifying the in-plane distribution of the thermal resistance of the adhesive layer 115 based on the specified in-plane distribution of the thickness of the adhesive layer 115 and thermal resistance data 203a indicating the relationship between the thickness of the adhesive layer 115 and the thermal resistance. As a result, the manufacturing method of the mounting table 11 according to the embodiment can specify the in-plane distribution of the thermal resistance of the adhesive layer 115.

[0049] Furthermore, the process (step S13) of specifying the in-plane thickness distribution of the adhesive layer 115 specifies the in-plane thickness distribution of the adhesive layer 115 by subtracting the thicknesses of the electrostatic chuck 112 and the base 111 from the measured thickness of the mounting table 11 for each corresponding position. In this way, the manufacturing method for the mounting table 11 according to the embodiment can specify the in-plane thickness distribution of the adhesive layer 115 that bonds the electrostatic chuck 112 and the base 111 together.

[0050] Furthermore, in the determining step (step S15), the processing conditions are determined so that the dots formed on the surface of the electrostatic chuck 112 are large or the dots are densely arranged in regions where the thermal resistance of the adhesive layer 115 is large, and the dots are small or the dots are densely arranged in regions where the thermal resistance of the adhesive layer 115 is small. As a result, the manufacturing method for the mounting table 11 according to the embodiment can improve the in-plane uniformity of the thermal resistance of the mounting table 11.

[0051] In addition, in the determining step (step S15), processing conditions for the surface of the electrostatic chuck 112 are determined so that the thermal resistances within the surface of the mounting table 11 are all within a predetermined allowable range. As a result, the manufacturing method for the mounting table 11 according to the embodiment can reduce individual differences in thermal resistance for each mounting table 11 manufactured.

[0052] Moreover, the mounting table 11 according to the embodiment includes an electrostatic chuck 112 (adsorption portion), a base 111, and an adhesive layer 115. The electrostatic chuck 112 is flat and electrostatically adsorbs the substrate W. The base 111 is flat. The adhesive layer 115 bonds the electrostatic chuck 112 and the base 111. The adhesive layer 115 has a plurality of regions with different thermal resistances. The electrostatic chuck 112 has different surface shapes corresponding to the plurality of regions. As a result, the mounting table 11 according to the embodiment improves the in-plane uniformity of the thermal resistance.

[0053] In addition, in the electrostatic chuck 112, in the regions with high thermal resistance among the multiple regions, the size of the dots formed on the surface of the electrostatic chuck 112 is large or the dots are arranged at a high density, and in the regions with low thermal resistance, the size of the dots is small or the dots are arranged at a low density. As a result, the mounting table 11 according to the embodiment improves the in-plane uniformity of the thermal resistance.

[0054] Moreover, the substrate processing apparatus 1 according to the embodiment has the mounting table 11 manufactured by the manufacturing method of the mounting table 11 according to the embodiment. This allows the substrate processing apparatus 1 according to the embodiment to suppress non-uniform etching characteristics within the surface of the substrate W. As a result, the substrate processing apparatus 1 can improve the yield of devices manufactured on the substrate W.

[0055] Although the embodiments have been described above, the disclosed embodiments should be considered to be illustrative and not restrictive in all respects. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the claims.

[0056] For example, the technology of the present disclosure may be adopted in any type of plasma processing apparatus. For example, the substrate processing apparatus 1 may be any type of plasma processing apparatus, such as an inductively-coupled plasma (ICP) type or a plasma processing apparatus that excites gas by surface waves such as microwaves.

[0057] In the above embodiment, the substrate processing apparatus 1 is described as a plasma etching processing apparatus, but the disclosed technology is not limited to this. The substrate processing apparatus 1 may be a film forming apparatus or a modification apparatus that uses plasma.

[0058] In the above-described embodiment, the substrate is a semiconductor wafer, but the present invention is not limited to this. The substrate may be another substrate, such as a glass substrate.

[0059] It should be noted that the embodiments disclosed herein are illustrative in all respects and should not be construed as limiting. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims. [Explanation of symbols]

[0060] W substrate 1. Substrate Processing Equipment 10 Plasma Processing Chamber 11 Placement table 111 Foundation 112 Electrostatic Chuck 115 Adhesive layer

Claims

1. A method for manufacturing a mounting table, comprising: a) preparing an adhesive body including an adsorption part that electrostatically adsorbs a substrate, a base, and an adhesive layer that adheres the adsorption part to the base; b) determining the in-plane distribution of the thermal resistance of the adhesive layer; c) determining processing conditions for the surface of the suction portion based on the determined in-plane distribution of the thermal resistance of the adhesive layer so as to reduce the variation in thermal resistance within the surface of the mounting table on which the substrate is placed; d) processing the surface of the adsorption portion based on the determined processing conditions; A method for manufacturing a mounting table having the above structure.

2. A method for manufacturing a mounting table, comprising: a) preparing an adhesive body including an adsorption part that electrostatically adsorbs a substrate, a base, and an adhesive layer that adheres the adsorption part to the base; b) determining processing conditions for the surface of the suction portion based on the in-plane distribution of the thermal resistance of the adhesive layer so as to reduce the variation in thermal resistance within the surface of the mounting table on which the substrate is placed; A method for manufacturing a mounting table having the above structure.

3. A method for manufacturing a mounting table, comprising: a) preparing an adhesive body including an adsorption part that electrostatically adsorbs a substrate, a base, and an adhesive layer that adheres the adsorption part to the base; b) determining the in-plane distribution of the thermal resistance of the adhesive layer; c) determining processing conditions for the surface of the suction portion based on the determined in-plane distribution of the thermal resistance of the adhesive layer so as to reduce the variation in thermal resistance within the surface of the mounting table on which the substrate is placed; A method for manufacturing a mounting table having the above structure.

4. The method further includes, before the step a), a step of measuring an in-plane distribution of thicknesses of the suction portion and the base; The step b) b-1) measuring the in-plane distribution of the thickness of the mounting table on which the suction portion and the base are bonded; b-2) determining the in-plane thickness distribution of the adhesive layer based on the measured in-plane thickness distribution of the mounting table and the in-plane thickness distributions of the suction unit and the base; b-3) determining the in-plane distribution of the thermal resistance of the adhesive layer based on the determined in-plane distribution of the thickness of the adhesive layer and thermal resistance data indicating the relationship between the thickness of the adhesive layer and the thermal resistance; The method for manufacturing the mounting table according to claim 1 or 3.

5. In the step b-2), the thickness of the suction portion and the base is subtracted from the measured thickness of the mounting table for each corresponding position, thereby identifying the in-plane thickness distribution of the adhesive layer. The method for manufacturing the mounting table according to claim 4 .

6. In the step c), the processing conditions are determined so that the size of the dots formed on the surface of the adsorption part is large or the dots are arranged at a high density in an area where the thermal resistance of the adhesive layer is large, and the size of the dots is small or the dots are arranged at a low density in an area where the thermal resistance of the adhesive layer is small.

6. A method for manufacturing a mounting table according to claim 1.

7. In the step c), processing conditions for the surface of the suction portion are determined so that the thermal resistances within the surface of the mounting table are all within a predetermined allowable range.

7. A method for manufacturing a mounting table according to claim 1.

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