Semiconductor light-emitting device and method for manufacturing the same

Abstract

To prevent a component of an adhesive from entering an internal space during manufacturing and use in a semiconductor light-emitting device in which a window member is sealed in a body using an adhesive.SOLUTION: A semiconductor light-emitting device is manufactured as follows. An uncured first adhesive is applied to a lower surface of a peripheral edge portion of a window member with a predetermined thickness and width and then cured to form a first adhesive layer. The window member is mounted on a main body so as to cover a space in which the semiconductor light-emitting element of the main body is disposed. A lower surface of the first adhesive layer is brought into contact with an upper surface of the main body to seal a space in which the semiconductor light-emitting element is arranged with the first adhesive layer. A gap surrounded by the window member, the main body, and the first adhesive layer is filled with an uncured second adhesive and then cured.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a semiconductor light emitting device having a structure in which a space in which a semiconductor light emitting element is arranged is airtightly sealed with an adhesive layer. [Background technology]

[0002] A known semiconductor light-emitting package for sealing a light-emitting element that emits ultraviolet light has a structure in which the light-emitting element is mounted on the bottom surface of a recess in a main body, the upper part of the recess is covered with a transparent window made of quartz glass or the like, and the space between the transparent window and the main body is sealed with an adhesive layer, as disclosed in Patent Document 1, for example.

[0003] In Patent Document 1, two types of adhesive members are used for sealing, and the portion of the gap between the transparent window and the main body that is close to the light emitting element is sealed with a first adhesive member, and the portion that is far from the light emitting element is sealed with a second adhesive member. Silicon, fluororesin (Teflon (registered trademark)) film, Ag paste, UV adhesive, lead-free low-temperature glass, acrylic adhesive, ceramic adhesive, etc. are used as materials for the first adhesive member and the second adhesive member. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] JP 2016-119477 A Summary of the Invention [Problem to be solved by the invention]

[0005] In a semiconductor light-emitting package, when a laser light-emitting element such as a VCSEL (Vertical Cavity Surface Emitting Laser) element is used as a light-emitting element, a light diffusion plate is used to convert the laser light into a light flux with a desired light distribution.

[0006] By disposing an MLA (microlens array) or a diffractive optical element (DOE) inside the window member that seals the light emitting element, the light diffusion plate can also serve as the window member of the semiconductor light emitting package.

[0007] However, when applying an adhesive between the light diffusion plate and the main body and hardening it to seal, it was found that a problem occurs in that the gas (outgassing) components released from the resin that makes up the adhesive during hardening spread along the microlens pattern inside the light diffusion plate. When the resin or the like gets into the microlens pattern of the light diffusion plate, the light distribution characteristics deviate from the design values.

[0008] In addition, it is not easy to completely harden the adhesive layer that seals the light diffusion plate and the main body, and even if it is completely hardened, the components of the adhesive layer may bleed out and enter the microlens pattern of the light diffusion plate in the environment in which the semiconductor light emitting package is used (high temperature or high temperature and high humidity environment). In this case, the light distribution characteristics of the light diffusion plate may deviate from the design value. In addition, the resin that has entered the microlens pattern of the light diffusion plate may discolor when irradiated with light from the light emitting element.

[0009] An object of the present invention is to prevent components of an adhesive from entering an internal space during manufacture and use in a semiconductor light emitting device in which a window member is sealed to a main body using an adhesive. [Means for solving the problem]

[0010] In order to achieve the above object, the semiconductor light emitting device of the present invention includes a semiconductor light emitting element, a main body on which the semiconductor light emitting element is mounted, a window member that covers the space in which the semiconductor light emitting element is disposed, and an adhesive layer that hermetically seals between the periphery of the window member and the main body. The adhesive layer includes a first adhesive layer that is disposed along the periphery of the window member with a predetermined thickness and width, and a second adhesive layer that is disposed on the outer periphery side of the first adhesive layer. The first adhesive layer has a cross-sectional outer shape along its width direction that is a convex curved surface extending from the surface of the window member toward the main body. The second adhesive layer is filled in the space surrounded by the first adhesive layer, the window member, and the main body. Effect of the Invention

[0011] According to the present invention, the first adhesive layer can prevent the components of the second adhesive layer from entering the internal space during production and use. [Brief description of the drawings]

[0012] [Figure 1] 1A is a cross-sectional view of a semiconductor light-emitting device 1 according to a first embodiment of the present invention; FIG. 1B is an explanatory diagram showing the structure of a light diffusion plate 40 (window member) of the semiconductor light-emitting device 1; and FIG. [Diagram 2] 2(a) to 2(e) are diagrams illustrating a manufacturing process for the semiconductor light emitting device 1. [Diagram 3] 10(a) to 10(c) are a top view, a side view and a bottom view of a semiconductor light-emitting device 2 according to a second embodiment of the present invention, (d) is a top view of a main body 110 of the semiconductor light-emitting device 2 before mounting a semiconductor light-emitting element 120, and (e) is a top view of the main body 110 after mounting the semiconductor light-emitting element 120. [Figure 4] 1A is a cross-sectional view of a semiconductor light-emitting device 2 according to a second embodiment, and FIG. [Diagram 5] FIG. 2A is a cross-sectional view of a semiconductor light-emitting device 3 of Comparative Example 1, and FIG. 2B is an explanatory diagram showing the structure of a light diffusion plate 240 (window member) of the semiconductor light-emitting device 3. [Figure 6] FIG. 1A is a cross-sectional view of a semiconductor light-emitting device 4 of Comparative Example 2, and FIG. 1B is an explanatory diagram showing the structure of a light diffusion plate 340 (window member) of the semiconductor light-emitting device 4. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0013] A semiconductor light emitting device according to one embodiment of the present invention will be described below.

[0014] <<First embodiment>> The configuration of a semiconductor light emitting device 1 of the first embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1(a) is a cross-sectional view of the semiconductor light emitting device 1, Fig. 1(b) is a diagram showing the structure of a light diffusion plate 40 (window member), and Fig. 1(c) is a cross-sectional view of an adhesive layer 50. Figs. 2(a) to (e) are diagrams showing the manufacturing process of the semiconductor light emitting device 1.

[0015] 1(a), the semiconductor light emitting device 1 is a laser diode package (LD-PKG) including a semiconductor light emitting element 20, which is a laser diode, and a main body 10 on which the semiconductor light emitting element 20 is mounted. A space 15 in which the semiconductor light emitting element 20 is disposed is covered with a light diffusing plate 40, which is a window member, and the gap between the periphery of the light diffusing plate 40 and the main body 10 is airtightly sealed with an adhesive layer 50.

[0016] The semiconductor light emitting element 20 may have any configuration, but for example, a VCSEL (Vertical Cavity Surface Emitting Laser) is used, in which light emitting surfaces that emit laser light in a direction perpendicular to the main surface of the semiconductor light emitting element 20 are arranged vertically and horizontally. As an example, a VCSEL with 500 or more arranged light emitting surfaces can be used. Alternatively, a PCSEL (Photonic Crystal Laser) that similarly emits laser light can be used. The semiconductor light emitting element 20 emits infrared light of laser light (for example, wavelength 900 nm to 1500 nm) upward. The wavelength of the laser light of the semiconductor light emitting element 20 can be ultraviolet light or visible light.

[0017] The main body 10 is configured to include a bottom member 11 and a side member 12 arranged to surround the bottom member 11. Although not shown, the bottom member 11 is provided with wiring, mounting electrodes, and vias that electrically connect the wiring and the mounting electrodes. The semiconductor light emitting element 20 includes a back electrode and an upper electrode, and the back electrode is fixed onto the wiring of the bottom member 11 by a conductive bonding material such as solder. The upper electrode of the semiconductor light emitting element 20 is connected to the wiring of the bottom member 11 by a bonding wire 30. Note that the electrode structure of the semiconductor light emitting element 20 and the connection between the electrodes of the semiconductor light emitting element 20 and the wiring of the bottom member 11 are not limited to this configuration. For example, both electrodes of the semiconductor light emitting element 20 may be on the upper surface and connected to the wiring of the bottom member 11 by two bonding wires 30. Also, the semiconductor light emitting element 20 may have a flip chip structure in which both electrodes of the semiconductor light emitting element 20 are on the back surface and connected to the wiring of the bottom member 11 by solder, solder bumps, or the like.

[0018] A step 13 is formed in the circumferential direction at a predetermined height near the upper end on the inner wall of the side member 12 of the main body 10. The peripheral portion of the light diffusion plate 40 is mounted on the step 13 of the main body 10, and the gap between the light diffusion plate 40 and the main body 10 is airtightly sealed by an adhesive layer 50. Note that the step 13 does not necessarily have to be provided, and the peripheral portion of the light diffusion plate 40 may be mounted on the upper end surface of the side member 12 and sealed.

[0019] At least the peripheral portion of the light diffusion plate 40 is made of glass, and at least the lower surface and side surface of the peripheral portion mounted on the step 13 are exposed to glass. A fine uneven structure 42 is provided in the central region of the lower surface of the light diffusion plate 40. The uneven structure 42 is a structure that converts the directional characteristics of the light emitted by the semiconductor light emitting element 20 into a predetermined directional characteristic when the laser light emitted by the semiconductor light emitting element 20 passes through the uneven structure 42. For example, the uneven structure 42 is a structure that diffuses the irradiation range 20a of the laser light to an irradiation range 20b of a predetermined shape as shown in FIG. 1(a). As a specific example, the uneven structure 42 is a resin microlens array, and is provided in the central region of the lower surface of the plate-shaped glass substrate 41 of the light diffusion plate 40 as shown in FIG. 1(b).

[0020] The uneven structure 42 is not limited to a microlens array, and may be another structure such as a diffractive optical element (DOE).

[0021] The material of the uneven structure 42 is not limited to resin, and other materials that transmit the light emitted from the semiconductor light emitting element 20, such as borosilicate glass or quartz, can be used.

[0022] Furthermore, the uneven structure 42 does not have to be a separate member from the substrate 41, and may be provided by processing the lower surface of the substrate 41.

[0023] 1(c), the lower surface of the peripheral portion of the light diffusion plate 40 faces the upper surface 13a of the step 13 of the main body 10 with a small predetermined gap therebetween. Also, the side surface of the light diffusion plate 40 faces the side surface 13b of the step 13 with a small predetermined gap therebetween.

[0024] The gap between the lower surface of the light diffusion plate 40 and the upper surface 13a of the step 13, and the gap between the side surface of the light diffusion plate 40 and the side surface 13b of the step 13 are at least partially filled with an adhesive layer 50. The adhesive layer 50 airtightly seals the space 15 in the main body 10 in which the semiconductor light emitting element 20 is disposed.

[0025] Specifically, the adhesive layer 50 includes a first adhesive layer 51 and a second adhesive layer 52 .

[0026] The first adhesive layer 51 is disposed with a predetermined thickness and width along the peripheral portion of the glass substrate 41 of the light diffusion plate 40. In the first embodiment, the first adhesive layer 51 is disposed along the corner portion where the bottom surface and the side surface of the light diffusion plate 40 intersect so as to encompass this corner portion.

[0027] Moreover, the first adhesive layer 51 is formed so that the outer shape of a cross section in its width direction (the direction perpendicular to the periphery of the light diffusion plate 40) is a convex curved surface from the surface of the light diffusion plate 40 toward the main body 10. For example, by applying the uncured first adhesive layer 51 to the corner portion where the bottom surface and the side surface of the light diffusion plate 40 intersect, the cross section can be formed into a convex curved surface by gravity and surface tension.

[0028] By forming the cross-sectional shape of the first adhesive layer 51 into a convex curved surface, only a narrow area of ​​the outer shape of the convex curved surface of the first adhesive layer 51 comes into contact with the main body 10, forming a sealing portion 51a that hermetically seals the space 15.

[0029] On the other hand, the second adhesive layer 52 is positioned on the outer periphery (farther from the semiconductor light emitting element 20) than the first adhesive layer 51, and fills the space surrounded by the first adhesive layer 51, the side of the light diffusion plate 40, and the step 13 of the main body 10.

[0030] Since the cross-sectional outer shape of the first adhesive layer 51 is a convex curved surface, the second adhesive layer 52 is thinnest at the portion in contact with the seal portion 51a. This allows the portion in contact with the seal portion 51a to be completely cured before the other portions when the second adhesive layer 52 is cured.

[0031] Moreover, the first adhesive layer 51 is formed of an adhesive having a smaller elastic modulus after curing than the elastic modulus of the cured second adhesive layer 52. That is, the first adhesive layer 51 is more easily elastically deformed than the second adhesive layer 52. Therefore, when the cured first adhesive layer 51 is pressed against the upper surface 13a of the step of the main body 10 in the manufacturing process, the first adhesive layer 51 comes into close contact with the upper surface 13a of the step of the main body 10, and seals the internal space 15.

[0032] On the other hand, since the second adhesive layer 52 has a larger elastic modulus after curing than the first adhesive layer 51 and is less susceptible to elastic deformation, in the manufacturing process, the space surrounded by the first adhesive layer 51, the side surface of the light diffusion plate 40, and the main body 10 is filled with the second adhesive layer 52 and then cured, thereby firmly fixing the light diffusion plate 40 and the main body 10 together.

[0033] The first adhesive layer 51 and the second adhesive layer 52 can be formed of a photocurable resin, a thermosetting resin, or the like.

[0034] When both the first adhesive layer 51 and the second adhesive layer 52 are formed of a photocurable resin, it is preferable to use, as the first adhesive layer 51, a layer having a shorter wavelength of light for curing than the wavelength of light for curing the second adhesive layer 52. Since the adhesive is cured by absorbing light having a wavelength for curing, the first adhesive layer 51 is cured, and then the uncured second adhesive layer 52 is filled and cured, so that the light for curing the second adhesive layer 52 is not absorbed by the first adhesive layer 51 and passes through. Therefore, the light for curing can be irradiated to the uncured second adhesive layer 52 through the first adhesive layer 51, and the entire second adhesive layer 52 can be easily cured.

[0035] <Manufacturing method> <Step S10: Preparation process> The light diffusion plate 40 is prepared by providing a resin uneven structure 42 in the central region of the lower surface of a glass substrate 41, and exposing the glass substrate 41 on the lower surface and side surfaces other than the central region (FIG. 2(a)). The resin constituting the uneven structure 42 is made of, for example, epoxy resin, and the glass substrate 41 is made of, for example, borosilicate glass or quartz glass.

[0036] <Step S20: First adhesive layer forming process> A precursor resin of the first adhesive layer 51 is applied along the corner where the lower surface and the side surface of the glass substrate 41 of the light diffusion plate 40 intersect. Here, an acrylic resin or a silicone resin that is an ultraviolet curable resin and is cured with light having a wavelength of 380 nm to 405 nm is used as the precursor resin of the first adhesive layer 51. Note that it is preferable that the elastic modulus of the first adhesive layer 51 after curing is low (for example, about Shore D60) in order to improve adhesion with the upper surface 13a of the step 13 of the main body 10.

[0037] The applied precursor resin hangs down due to gravity and surface tension, forming a droplet with a convex curved surface (see Fig. 2(b)). Note that the cross-sectional shape of the droplet does not necessarily have to be circular as in Fig. 2(b), and may be an ellipse elongated in the vertical direction as in Fig. 2(e).

[0038] The precursor resin is irradiated with ultraviolet light of a predetermined curing wavelength to be cured, thereby forming a first adhesive layer 51.

[0039] This step provides a light diffusion plate 40 having a downwardly convex first adhesive layer 51 formed along the corners where the bottom surface and the side surfaces intersect (FIG. 2(b)).

[0040] <Step S25: Deaeration process> Next, the light diffusion plate 40 is heated at 85° C. for 30 minutes to degas (evaporate) the residual volatile components contained in the first adhesive layer 51.

[0041] It should be noted that this degassing step is not necessary if complete curing can be achieved without leaving any residual volatile components in the step S20.

[0042] <Step S30: Step of placing the light diffusion plate 40> Nitrogen gas (N 2 ) atmosphere, the peripheral portion of the light diffusion plate 40 is placed on the step 13 of the main body 10, and the light diffusion plate 40 is pressed from above (FIG. 2(c)). As a result, the first adhesive layer 51 with a low elastic modulus is pressed against the upper surface 13a of the step 13 of the main body 10, and contacts the upper surface 13a of the main body 10 at the annular narrow area of ​​the seal portion 51a, thereby hermetically sealing the internal space 15.

[0043] This process is carried out using dry air and nitrogen gas (N 2 By carrying out this process in an atmosphere of nitrogen gas (N), argon gas (Ar), or a mixed gas containing either of these gases, the internal space 15 can be filled with a predetermined gas. Furthermore, by carrying out this process in an airtight container that can create a vacuum, reduced pressure, or pressurization, the internal space 15 can be placed in a vacuum, reduced pressure, or pressurization.

[0044] <Step S40: Second adhesive layer forming process> With the light diffusion plate 40 pressed from above, a precursor resin that will become the second adhesive layer 52 is filled between the side surface of the glass substrate 41 of the light diffusion plate 40 and the side surface 13b of the step 13 of the main body 10. As a result, the space surrounded by the first adhesive layer 51, the side surface of the light diffusion plate 40, and the step 13 of the main body 10 is filled with the precursor resin that will become the second adhesive layer 52.

[0045] Here, the precursor resin of the second adhesive layer 52 is an ultraviolet curable resin, and an epoxy resin with a curing light wavelength of 400 to 430 nm is used. Note that the elastic modulus of the cured second adhesive layer 52 is preferably higher than that of the first adhesive layer 51 (for example, about Shore D90) in order to fix the light diffusion plate 40 and the main body 10.

[0046] After the precursor resin of the second adhesive layer 52 is filled, light with a predetermined curing wavelength (400 to 430 nm) is irradiated from above the glass substrate 41 toward the precursor resin of the second adhesive layer 52 to cure it.

[0047] At this time, since the ultraviolet light of 400 to 430 nm passes through the first adhesive layer 51 that has absorbed and cured the light of 380 nm, the second adhesive layer 52 in the vicinity of the seal portion 51a where the second adhesive layer 52 is the thinnest can be cured before the second adhesive layer 52 in other portions. Specifically, the second adhesive layer 52 can be cured from the inner periphery side of the seal portion 51a where the second adhesive layer 52 is the thinnest and can be cured well toward the outer periphery. In other words, the airtight structure of the seal portion 51a can be reliably formed at the initial stage of curing of the second adhesive layer 52.

[0048] This allows the light for curing to reach the second adhesive layer 52 in the vicinity of the seal portion 51a, which is located in the shadow of the first adhesive layer 51, and allows the second adhesive layer 52 to be sufficiently cured. In other words, the second adhesive layer 52 can firmly and airtightly bond the periphery of the light diffusion plate 40 and the main body 10 together.

[0049] Furthermore, even if the components of the second adhesive layer 52 volatilize during the curing process of the second adhesive layer 52, the first adhesive layer 51 and the second adhesive layer 52 in the vicinity of the previously cured sealing portion 51a seal the periphery on the space 15 side, thereby preventing the volatile components from entering the space 15.

[0050] Furthermore, even if components of the second adhesive layer 52 bleed out (bleed) during use of the light emitting device 1, the first adhesive layer 51 and the second adhesive layer 52 in the vicinity of the sealing portion 51a seal the periphery of the space 15, so that even if components bleed out (bleed) from the second adhesive layer 52 are present, they are prevented from entering the space 15 due to capillary action, etc.

[0051] This prevents volatile components of the second adhesive layer 52 from adhering to the uneven structure 42, or prevents dissolved components from reaching the uneven structure 42 along the underside of the substrate 41, thereby impairing the optical properties of the uneven structure 42.

[0052] As described above, in the semiconductor light emitting device 1 of the first embodiment, the first adhesive layer 51 serves as a sealant, and can prevent volatile components from entering the space 15 in which the semiconductor light emitting element 20 is disposed when the second adhesive layer 52 is filled and cured. Even if the components of the second adhesive layer 52 bleed out, the bled components can be prevented from entering the space.

[0053] That is, the semiconductor light emitting device 1 of the first embodiment has a structure in which a resin is used for airtight sealing, but does not impair the directional characteristics of the light diffusing plate 40, and can provide a semiconductor light emitting device 1 with highly reliable optical characteristics.

[0054] <<Second embodiment>> The configuration of a semiconductor light emitting device 2 of the second embodiment will be described with reference to Fig. 3 and Fig. 4. Fig. 3(a) to (c) are a top view, a side view and a bottom view of the semiconductor light emitting device 2, and Fig. 3(d) and (e) are top views of the main body 110 before and after mounting a semiconductor light emitting element 120. Fig. 4(a) and (b) are a cross-sectional view of the semiconductor light emitting device 2 and an enlarged view thereof.

[0055] Similar to the semiconductor light emitting device 1 of the first embodiment, the semiconductor light emitting device 2 has a structure that is hermetically sealed by the periphery of the window member 140, the main body 110, and the adhesive layer 150. Unlike the semiconductor light emitting device 1, the semiconductor light emitting device 2 of the second embodiment has the main body 110 in a flat plate shape, and the semiconductor light emitting element 120 is a deep ultraviolet LED with a wavelength of 265 nm.

[0056] The window member 140 is configured to include a convex portion 140a having a space 190 therein and a flange portion 140b provided on the periphery of the convex portion 140a. The convex portion 140a is dome-shaped here. At least the convex portion 140a transmits light emitted by the semiconductor light emitting element 120. The inner wall surface of the central region of the convex portion 140a of the window member 140 may or may not have an uneven structure. The outer shape of the flange portion 140b is circular in the example of FIG. 3(a), but it is not limited to circular and may be rectangular.

[0057] The semiconductor light emitting element 120 is mounted on the main body 110 so as to be covered by the convex portion 140a of the window member 140. A first wiring (anode) 61 and a second wiring (cathode) 62 are provided on the upper surface of the main body 110. The semiconductor light emitting element 120 is fixed on the first wiring 61 by a conductive element bonding layer 63 such as solder. The upper electrode of the semiconductor light emitting element 120 is connected to the second wiring 62 by two bonding wires 130. A protection element (Zener diode) 121 is mounted between the first wiring 61 and the second wiring 62 and is electrically connected to the first wiring 61 and the second wiring 62.

[0058] A first mounting electrode (anode) 71 and a second mounting electrode (cathode) 72 are provided on the back surface of the main body 110, and are connected to a first wiring 61 and a second wiring 62 by a first via 81 and a second via 82, respectively.

[0059] The adhesive layer 150 hermetically seals the lower surface of the flange portion 140b and the upper surface of the main body 110. The adhesive layer 150 includes a first adhesive layer 151 and a second adhesive layer 152.

[0060] The first adhesive layer 151 is disposed along the boundary between the flange portion 140b and the convex portion 140a of the window member 140. The second adhesive layer 152 fills the space surrounded by the first adhesive layer 151, the flange portion 140b of the window member 140, and the upper surface of the main body 110.

[0061] A method for manufacturing the semiconductor light emitting device 2 and an example of the materials for each component will be described below.

[0062] <Manufacturing method> <Preparation process> The window member 140 is made of ultraviolet-transmitting glass (quartz, borosilicate glass).

[0063] The main body 110 is prepared by providing a base material (aluminum nitride: AlN, 150 to 170 W / mK) with a first wiring 61, a second wiring 62, a first mounting electrode 71, a second mounting electrode 72, and vias 81 and .

[0064] The base material may be any material capable of airtightly sealing the space 190, and may be other ceramics such as alumina. The first wiring 61, etc. may have a layer structure in which a W layer, a Ni layer, and a Au layer are laminated in this order from the base material side, or a layer structure in which a NiCr layer, a Au layer, a Ni layer, and a Au layer are laminated in this order.

[0065] As the semiconductor light emitting element 120, an LED with a wavelength of 265 to 415 nm is prepared.

[0066] The semiconductor light emitting element 120 is bonded onto the first wiring 61 of the main body 110 using, for example, Au-Sn volatile solder paste (Au-Sn: 20 wt%) as the element bonding layer 63. The proportion of Sn after bonding is completed is, for example, about 10 to 20 wt%.

[0067] The upper electrodes of the semiconductor light emitting element 120 are connected to the second wiring 62 by two bonding wires (Au, φ30 μm) 130.

[0068] <First adhesive layer formation process> A precursor resin of the first adhesive layer 151 (a silicone resin that is an ultraviolet curable resin, the wavelength of the curing light is 380 nm to 405 nm) is applied along the corner where the convex portion 140a and the flange portion 140b of the window member 140 intersect.

[0069] The applied precursor resin hangs down due to gravity and surface tension, forming a precursor resin layer with a convex curved surface. In this state, the precursor resin layer is irradiated with ultraviolet light of a predetermined curing wavelength to cure it, forming a first adhesive layer 151.

[0070] The elastic modulus of the first adhesive layer 51 after curing is preferably about Shore D60.

[0071] <Degassing process> Next, if necessary, the window member 140 is heated at 85° C. for 30 minutes to degas remaining volatile components contained in the first adhesive layer 151 .

[0072] <Step of placing the window member 140> The space 190 inside the convex portion 140a of the window member 140 is evacuated to a predetermined degree of vacuum or a filled gas (dry nitrogen gas or air) is introduced into the space 190, and the flange portion 140b is mounted on the plate-shaped main body 110. The window member 140 is pressed from above against the upper surface of the main body 10, and the internal space 15 is airtightly sealed by the first adhesive layer 151.

[0073] <Second adhesive layer formation process> With the window member 140 pressed from above, a precursor resin (silicone resin which is an ultraviolet curing resin, the wavelength of the curing light is 400 to 430 nm) that becomes the second adhesive layer 52 is filled into the space surrounded by the lower surface of the flange portion 140b of the window member 140, the upper surface of the main body 110, and the first adhesive layer 151.

[0074] Thereafter, light with a predetermined curing wavelength is irradiated from above the window member 140 toward the precursor resin of the second adhesive layer 152, causing it to cure.

[0075] This allows the flange portion 140b of the window member 140 and the main body 10 to be firmly bonded together, similarly to the first embodiment.

[0076] At this time, the second adhesive layer 152, which is thinner near the first adhesive layer 151, can be cured before other parts of the second adhesive layer 152. Therefore, even if components of the second adhesive layer 152 volatilize during the curing process of the second adhesive layer 152 or leaching (bleeding) occurs during use of the semiconductor light emitting device 2, the volatile components or leached components can be prevented from entering the space 190.

[0077] This prevents volatilized or eluted components of the second adhesive layer 152 from becoming graphite, glassy carbon, diamond-like carbon, etc. and adhering to the light-emitting surface of the semiconductor light-emitting element 120, thereby impairing the optical characteristics (light output).

[0078] As described above, the semiconductor light-emitting device 2 of the second embodiment has a structure in which a window member 140 having a dome-shaped or other convex portion 140a and a flange portion 140b is hermetically sealed to the main body 110 with a resin (adhesive layer 150), while still providing a highly reliable semiconductor light-emitting device 2 without impairing the optical properties of the window member 140.

[0079] The semiconductor light emitting devices according to the first and second embodiments described above can be used as light sources for object or person authentication devices or distance measurement devices, sterilization devices, and the like.

[0080] Semiconductor light emitting devices 3 and 4 of Comparative Examples 1 and 2 will be described below for comparison with the semiconductor light emitting device 1 of the first embodiment.

[0081] <Comparative Example 1> As Comparative Example 1, a semiconductor light emitting device 3 having a structure similar to that of the semiconductor light emitting device 1 of the first embodiment was manufactured using a light diffusing plate 240 having a resin uneven structure 242 (microlens array) on the entire lower surface of a substrate 241.

[0082] The peripheral edge of the light diffusion plate 240 and the step of the main body 10 were sealed with an adhesive layer 250. The same adhesive as the second adhesive layer 52 in the first embodiment was used for the adhesive layer 250. The other configurations were the same as those in the first embodiment.

[0083] In the manufacturing process of the semiconductor light-emitting device 3 of Comparative Example 1, before the precursor resin of the adhesive layer 250 was cured, components of the precursor resin and outgassing components generated during curing wet and spread over or adhere to the pattern of the uneven structure 242 of the light diffusion plate 240.

[0084] Furthermore, components eluted (bled) from the adhesive layer 150 in a high-temperature, high-humidity environment simulating the environment in which the device will be used after manufacture spread along the pattern of the microlens array of the light diffusion plate 240.

[0085] Due to these phenomena, it was confirmed that the components of the adhesive layer 250 entered the pattern of the uneven structure 242 of the light diffusion plate 240, and the directional characteristics were deteriorated to characteristics different from the design values. Specifically, the directional characteristics, which should have been a rectangular irradiation area with uniform luminous intensity within the surface, became directional characteristics with high luminous intensity at the center and low luminous intensity at the periphery, resulting in a circular irradiation area. <Comparative Example 2> A semiconductor light emitting device 4 of Comparative Example 2 will be described with reference to FIGS. 6(a) and 6(b).

[0086] In Comparative Example 2, a light diffusion plate 240 is used in which a resin-made uneven structure 342 on the lower surface of a substrate 341 is made into a flat resin layer 342a at the periphery.

[0087] As a result, in the manufacturing process of the semiconductor light-emitting device 4 of Comparative Example 2, the phenomenon in which the components of the precursor resin and the outgassing components generated during curing wet and spread over or adhere to the pattern of the uneven structure 342 of the light diffusion plate 340 before the precursor resin of the adhesive layer 250 is cured can be prevented.

[0088] However, when the semiconductor light-emitting device 4 of Comparative Example 2 was subjected to a high temperature and high humidity test, it was found that components eluted from the adhesive layer 250 formed small convex structures in the flat resin layer 342a and the uneven structure 342, degrading the directional characteristics of the uneven structure 342.

[0089] As described above, the light emitting devices 1 and 2 of the first and second embodiments are excellent light emitting devices capable of preventing the gas volatilized from the adhesive layers 52 and 152 or the bleeding components from entering the space 15. [Explanation of symbols]

[0090] 1. Semiconductor light-emitting device 2. Semiconductor light-emitting device 3. Semiconductor light-emitting devices 4. Semiconductor light-emitting devices 10 Main unit 11 Bottom member 12 Side member 13 Steps 13a Top side 13b Side 15 Space 20 Semiconductor light emitting device 20a Irradiation range 20b Irradiation range 30 Bonding Wire 40 Light Diffuser 41 Substrate 42 Uneven structure 50 adhesive layer 51 First adhesive layer 51a Seal part 52 Second adhesive layer 61 1st wiring 62 2nd wiring 63 Element bonding layer 71 First mounting electrode 72 Second mounting electrode 81 First Via 82 2nd Via 110 Main unit 120 Semiconductor light emitting element 130 Bonding Wire 140 Window materials 140a Convex part 140b Tsubabe 150 Adhesive layer 151 First adhesive layer 152 Second adhesive layer 190 Space 240 Light Diffuser 241 Substrate 242 Uneven structure 250 Adhesive layer 340 Light Diffuser 341 Substrate 342 Uneven structure 342a Resin layer

Claims

1. a semiconductor light-emitting element; a main body on which the semiconductor light-emitting element is mounted; a window member that covers a space in which the semiconductor light-emitting element is disposed; and an adhesive layer that hermetically seals a gap between a peripheral portion of the window member and the main body; the adhesive layer includes a first adhesive layer disposed along a peripheral portion of the window member with a predetermined thickness and width, and a second adhesive layer disposed on an outer periphery side of the first adhesive layer, the first adhesive layer has a cross-sectional outer shape along a width direction thereof that is a convex curved surface extending from a surface of the window member toward the main body, The semiconductor light emitting device, wherein the second adhesive layer fills a space surrounded by the first adhesive layer, the window member, and the main body.

2. 2. The semiconductor light-emitting device according to claim 1, wherein the window member has at least a peripheral portion made of glass and a central portion having an uneven structure that converts the directional characteristics of light emitted by the semiconductor light-emitting element into a predetermined directional characteristic.

3. 2. The semiconductor light emitting device according to claim 1, wherein the first adhesive layer has a smaller elastic modulus than the second adhesive layer.

4. 2. The semiconductor light emitting device according to claim 1, wherein the first adhesive layer and the second adhesive layer are made of a photocurable resin, A semiconductor light emitting device, wherein the wavelength of light for hardening said first adhesive layer is shorter than the wavelength of light for hardening said second adhesive layer.

5. 2. The semiconductor light emitting device according to claim 1, wherein the first adhesive layer is disposed along a corner of the window member.

6. 2. The semiconductor light emitting device according to claim 1, wherein the main body has a bottom member and a side member arranged to surround the bottom member, the semiconductor light emitting element is disposed on the bottom member, a sealing layer formed on the upper end of the side surface member and a peripheral edge of the window member, the sealing layer being formed on the upper end of the side surface member;

7. 2. The semiconductor light emitting device according to claim 1, wherein the body is flat, the window member includes a convex portion having an internal space and a flange portion provided on a peripheral edge of the convex portion, the semiconductor light emitting element is mounted on the main body so as to be covered by the convex portion of the window member, A semiconductor light-emitting device characterized in that the first adhesive layer is arranged along the boundary between the flange portion of the window member and the convex portion, and the second adhesive layer fills the space surrounded by the first adhesive layer, the flange portion of the window member, and the upper surface of the main body.

8. applying an uncured first adhesive to a lower surface of a peripheral portion of the window member in a predetermined thickness and width, and then curing the applied first adhesive to form a first adhesive layer; a step of mounting the window member on the main body so as to cover a space in the main body in which the semiconductor light emitting element is disposed, and sealing the space with the first adhesive layer by bringing a lower surface of the first adhesive layer into contact with an upper surface of the main body; filling an uncured second adhesive into a gap surrounded by the window member, the main body, and the first adhesive layer, and then curing the second adhesive; 2. A method for manufacturing a semiconductor light emitting device, comprising:

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