Substrate alignment method

Abstract

To accurately align a multi-cut substrate having enhanced mounting density, in an exposure device.SOLUTION: In an exposure device 10, on a substrate W, dot-like marks M aligned on a cross shape or an L shape, or collective alignment marks L, L' and LL composed of the dot-like marks M aligned so as to surround respective divided substrate regions CS can be formed, in a space SS provided in the vicinity of four corners of the divided substrate regions CS of a gap (cut space) SM of the divided substrate regions CS.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] The present invention relates to alignment of an apparatus, such as an exposure apparatus or a laser processing apparatus, which forms a pattern on or processes a substrate. [Background technology]

[0002] Exposure equipment utilizes an exposure method that forms multiple patterns on one board. For example, a technology is known for cutting out multiple IC package substrates, such as FC-BGA substrates, from a single printed wiring board.

[0003] The manufacturing process for such IC package substrates includes a build-up process in which the process of forming circuit patterns is repeated many times and layers are stacked, so precise positioning is required for each cut-out portion (hereinafter referred to as an individual substrate) relative to the underlying pattern.

[0004] As an alignment method for a substrate on which a large number of individual substrates (exposure areas) are arranged, for example, a method is known in which the alignment marks of each exposure area are measured by a dedicated measuring device that reads the alignment marks separately from the exposure device (see Patent Document 1). In this method, in the pre-exposure stage, the measuring device measures the alignment marks provided in each exposure area of ​​the substrate on which a large number of exposure areas are arranged.

[0005] Another known alignment method involves imaging connection pads or the like formed in each exposure area as alignment marks (representative marks) and detecting the amount of positional deviation of each exposure area by a template matching method (see Patent Documents 2 and 3). [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 10-64804 [Patent Document 2] JP 2013-58520 A [Patent Document 3] JP 2017-67992 A Summary of the Invention [Problem to be solved by the invention]

[0007] When the number of patterns formed on a single substrate increases due to factors such as an increase in substrate size, it takes time to measure the alignment marks in each pattern area separately using a dedicated measuring device, reducing substrate productivity.

[0008] On the other hand, the miniaturization of patterns formed in each exposure area extends not only to wiring but also to connection pads, etc. Also, as the packaging density of the board increases, the distance between adjacent exposure areas inevitably becomes narrower. Therefore, in the method of extracting connection pads, etc. as alignment marks and performing template matching, it is easy for erroneous extraction of alignment marks to occur, making it difficult to align with high accuracy.

[0009] Such problems can occur not only in exposure devices that perform alignment, but also in laser processing devices and the like.

[0010] Therefore, there is a demand for accurate alignment even for multiple boards with increased packaging density. [Means for solving the problem]

[0011] The alignment method according to one aspect of the present invention can be performed in an exposure apparatus, a laser processing apparatus, a dedicated measuring apparatus, etc., and can be applied to a multiple substrate on which a plurality of rectangular pattern areas are defined. In the multiple substrate, gaps are provided between the rectangular pattern areas.

[0012] In the alignment method of the present invention, for a multiple substrate on which a plurality of rectangular pattern areas are defined, collective alignment marks are formed at least for spaces provided near the four corners of each rectangular pattern area, where the "spaces" refer to the gaps between the pattern areas that are located near the four corners.

[0013] In the alignment method of the present invention, a multiple substrate is imaged, a representative position of a collective alignment mark is measured based on image data obtained by imaging, and a pattern formation position of each rectangular pattern area is determined based on the measured representative position of the collective alignment mark.

[0014] This collective alignment mark includes a plurality of dot marks that cross along the boundary lines of a plurality of rectangular pattern regions, or a plurality of dot marks that are arranged in an L shape.

[0015] As described above, the collective alignment mark may be formed at least in the space provided near the four corners of each rectangular pattern area, and may be formed in various ways, including in other areas. For example, a plurality of dot marks intersecting in a cross shape or a plurality of dot marks arranged in an L shape may be formed only near the four corners. Also, the collective alignment mark may be formed so that a plurality of dot marks surround each rectangular pattern area.

[0016] In the alignment method, the average value of the positions of the dot marks included in the image data can be measured as the representative position of the collective alignment mark. In this case, if there are dot marks in the image data that do not have a complementary symmetrical positional relationship, such dot marks can be excluded from the calculation of the average value.

[0017] On the other hand, in an alignment method, it is possible to define two straight lines that intersect with each other along the arrangement of dot marks contained in image data, and measure the intersection of the two straight lines as the representative position of the collective alignment mark.

[0018] There are various methods for extracting the collective alignment mark. For example, dot marks arranged in a cross shape, an L shape, or a matrix shape can be extracted from image data obtained by imaging. Extracting dot marks in this way makes it possible to prevent erroneous extraction of dot marks that do not constitute a collective alignment mark.

[0019] There are various methods for determining the pattern formation position. For example, the pattern formation position of each rectangular pattern region can be determined based on the positions of at least two diagonal collective alignment marks among the collective alignment marks at the four corners of each rectangular pattern region.

[0020] The method for manufacturing a substrate of the present invention includes a step of forming a pattern on a multiple substrate aligned by the above-described alignment method, and a step of cutting out individual substrates formed to match each pattern area from the multiple substrate.

[0021] Another aspect of the present invention is an alignment mark formation method that relates to a multiple panel substrate having a plurality of defined rectangular pattern areas, and includes setting a collective alignment mark to be formed in at least spaces provided near the four corners of each rectangular pattern area, and forming the set collective alignment mark on the multiple panel substrate, wherein the collective alignment mark includes a plurality of dot-shaped marks that intersect in a crisscross pattern or are arranged in an L shape along the boundary lines of the multiple rectangular pattern areas.

[0022] In addition, an alignment method which is one aspect of the present invention involves imaging a multiple substrate on which a collective alignment mark has been formed by the above-mentioned alignment mark formation method, measuring a representative position of the collective alignment mark from image data obtained by the imaging, and determining a pattern formation position for each rectangular pattern area based on the measured representative position of the collective alignment mark.

[0023] One aspect of the present invention is a program that causes an exposure device or laser processing device to execute, for a multi-panel substrate having a plurality of rectangular pattern areas defined therein, at least the steps of setting a collective alignment mark to be formed in spaces provided near the four corners of each rectangular pattern area, and forming the set collective alignment mark on the multi-panel substrate, wherein the collective alignment mark includes a plurality of dot-shaped marks that intersect in a crisscross pattern or are arranged in an L-shape along the boundary lines of the multiple rectangular pattern areas.

[0024] Furthermore, a program which is one aspect of the present invention causes an exposure apparatus or a measuring apparatus capable of measuring alignment marks to execute the steps of measuring a representative position of the collective alignment mark from image data obtained by imaging a multi-panel substrate on which a collective alignment mark has been formed by executing the above-mentioned program, and determining a pattern formation position of each rectangular pattern area based on the measured representative position of the collective alignment mark. Effect of the Invention

[0025] According to the present invention, in an exposure apparatus or the like, accurate alignment can be performed even for a multiple substrate having an increased mounting density. [Brief description of the drawings]

[0026] [Figure 1] 1 is a schematic block diagram of an exposure apparatus according to the present embodiment. [Diagram 2] 13 is a flowchart of a process for forming a collective alignment mark. [Diagram 3] 1 shows an example of a substrate W on which a collective alignment mark is formed. [Figure 4] FIG. 13 is a flow diagram showing the alignment process including measuring the position of a collective alignment mark. [Diagram 5] FIG. 13 is a diagram showing an extraction area. [Figure 6] 11A to 11C are diagrams showing two calculation methods for determining a representative position of a collective alignment mark. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0027] The exposure apparatus according to the present embodiment will be described below with reference to the drawings.

[0028] FIG. 1 is a schematic block diagram of an exposure apparatus according to the present embodiment.

[0029] The exposure apparatus 10 is configured as a maskless exposure apparatus and includes an exposure section 50 having a light modulation element array (here, a DMD (Digital Micro-mirror Device)). A control section 20 of the exposure apparatus 10 controls the operation of the exposure apparatus 10, and a program related to control of the exposure process and the like is stored in advance in a memory (not shown).

[0030] A scanning mechanism 80 provided on the stand 70 is capable of moving a table 90, on which a substrate W is mounted, along a main scanning direction (X direction) and a sub-scanning direction (Y direction). The main scanning direction (X direction) and the sub-scanning direction (Y direction) are defined on the table 90 as a coordinate system that is orthogonal to each other.

[0031] The exposure unit 50 includes an illumination optical system and a projection optical system in addition to the above-mentioned light modulation element array. Illumination light emitted from a light source unit (not shown) passes through the illumination optical system, the light modulation element array, and the projection optical system, and is irradiated onto the table 90. In the DMD in which micromirrors are arranged in a matrix, each micromirror is selectively controlled to be turned ON / OFF, and the light reflected by the micromirrors in the ON state is projected onto the substrate W as a pattern light.

[0032] The drawing data (vector data) sent from the control unit 20 is converted into raster data and then sent to the DMD. The position coordinates of the table 90 are measured by a linear encoder or a laser interferometer (not shown), and the pattern light is projected according to the position of the table 90, i.e., the position of the substrate W.

[0033] As the scanning mechanism 80 moves the table 90 at a predetermined speed in the main scanning direction (X direction), each micromirror of the DMD is controlled to be turned ON / OFF, whereby a pattern of light according to the position of the substrate W is projected.

[0034] As an exposure method, exposure can be performed while moving the table 90 continuously or intermittently, and overlapping exposure (multiple exposure) is also possible. The exposure unit 50 is arranged at a slight angle to the main scanning direction (X direction), which makes it possible to form a pattern with a resolution equal to or smaller than the cell size.

[0035] Here, the substrate W is configured as a multiple substrate of an FC-BGA substrate. For example, it is a build-up multi-layer substrate in which the circuit patterns of 60 mm x 60 mm individual substrates (FC-BGA substrates) are arranged in an 8 x 8 matrix on a 520 mm x 520 mm rectangular substrate.

[0036] The exposure apparatus 10 performs an exposure process to form patterns on the substrate, including a circuit pattern for each individual substrate region and an insulating pattern formed on an insulating layer between layers. After the exposure process, a substrate for a semiconductor package can be obtained by a process of cutting the gaps (also called cut spaces) between the individual substrates.

[0037] The exposure apparatus 10 has an alignment function, and includes a measurement unit 30, an image processing unit 40, and an imaging unit 60. The imaging unit 60 is configured, for example, with a CCD camera, and can be moved along the main scanning direction (X direction) and the sub-scanning direction (Y direction) by a driving mechanism (not shown).

[0038] The image processing unit 40 extracts alignment marks, which will be described later, from the image data obtained by the imaging unit 60. The measurement unit 30 measures the positions of the extracted alignment marks. The control unit 20 determines the exposure positions of each individual substrate region in the exposure process based on the measured positions of the alignment marks, and performs alignment.

[0039] As described later, in this embodiment, alignment marks for positioning formed on the substrate W are formed in gaps (cut spaces) in the individual substrate regions. Also, the alignment mark is composed of a plurality of dot-shaped marks as elements (hereinafter referred to as a collective alignment mark).

[0040] Exposure apparatus 10 is capable of forming a collective alignment mark. With regard to the formation of the collective alignment mark, it is possible to execute an exposure process for forming only the collective alignment mark on substrate W, and it is also possible to execute the exposure process in conjunction with a process for exposing a lower layer pattern (base pattern) of a buildup on substrate W.

[0041] 2 is a flowchart of the collective alignment mark forming process. After the substrate W is placed on the table 90, the process is executed by the control unit 20 based on a program stored in a memory (not shown). Note that the collective alignment mark forming process may be performed after measuring and aligning GA (global alignment) alignment marks formed in advance at the four corners of the substrate W.

[0042] First, the specifications of the collective alignment mark to be formed on the substrate W are determined (S101). The specifications of the collective alignment mark include the size, arrangement, etc. of the alignment mark. These specifications are determined according to the number and size of the individual substrate areas, the distance between the individual substrate areas (cut space width), etc., determined for the substrate W.

[0043] 3A and 3B are diagrams showing an example of a substrate W on which a collective alignment mark is formed. Here, the collective alignment marks shown in Fig. 3A and Fig. 3B can be selectively set.

[0044] As shown in Fig. 3, on the substrate W, individual substrate areas CS are arranged in a matrix shape at a predetermined pitch in correspondence with the semiconductor packages. Here, the individual substrate areas CS are determined in accordance with a grid defined by an XY coordinate system, and a lower layer pattern (base pattern) is formed. Note that, although Fig. 3 shows only four individual substrate areas CS, in reality, a large number of individual substrate areas CS, several hundred of which are aligned along the length and width directions of the substrate W, are formed.

[0045] The interval (pitch) K of the gap SM, which becomes the cut space provided between the individual substrate regions CS, is determined according to the size of the individual substrate regions CS, the desired packaging density of the substrate W, etc. For example, in the example of the FC-BGA substrate described above, the interval K is approximately 2 to 3 mm.

[0046] 3A, a collective alignment mark L is formed in the spaces SS provided near the four corners of each individual substrate area CS among the gaps SM between the individual substrate areas CS. The collective alignment mark L is composed of a plurality of dot-shaped marks M arranged in a cross shape, and is aligned along the boundary lines BL of the individual substrate areas CS.

[0047] Here, a total of nine dot marks M are arranged in a cross shape along the X and Y directions. However, the number of dot marks arranged in the X and Y directions and the total number are not limited to this. The dot marks M may be arranged in a cross shape so as to have a symmetrical positional relationship with respect to the cross intersection position (center position). In other words, the dot marks M may be arranged in a cross shape so as to have a complementary symmetrical positional relationship. In this case, it is also possible to configure the dot marks M not to be provided at the cross intersection position. On the other hand, it is also possible to form a collective alignment mark LL composed of dot marks M arranged in an L shape.

[0048] In Fig. 3(B), a collective alignment mark L' is formed in a different form from that in Fig. 3(A). The collective alignment mark L' is composed of dot-shaped marks M surrounding each individual substrate area CS. However, the collective alignment mark L' also includes a collective alignment mark L1 (L2) in which dot-shaped marks M are arranged in a cross shape (or L shape) at the four corners of each individual substrate area CS, like the collective alignment mark L shown in Fig. 3(A).

[0049] 3(A) and 3(B) are configured as marks having a substantially circular outline and substantially the same diameter (e.g., 100 μmm) that is equal to or smaller than the width K of the gap SM between the individual substrate regions CS. The dot marks M are arranged at a constant pitch (e.g., about several hundred μm) in the XY coordinate system.

[0050] In this embodiment, the shape (type) of the collective alignment mark L to be formed on the substrate W is set based on the alignment mark specifications (S102). Here, it is possible to alternatively select to form the collective alignment mark L (LL) or collective alignment mark L' shown in Figures 3(A) and (B) on the substrate W. However, a configuration may be made in which a collective alignment mark shape other than that can be selected. Alternatively, a configuration may be made in which only the collective alignment mark shown in Figure 3(A) or (B) is set. In this case, the shape of the collective alignment mark is set without any particular user selection operation being required.

[0051] Then, based on drawing data corresponding to the set collective alignment mark, an exposure process is performed to form the collective alignment mark L (S103). As described above, the exposure process can also be performed in conjunction with the formation of a circuit pattern on the individual substrate area CS. After the exposure process, a Cu pattern in the shape of a dot mark is formed on the substrate W through a development process and an etching process, thereby forming the collective alignment mark L. The exposure process of the collective alignment mark L can be performed based on drawing data sent from an external computer connected to the exposure apparatus 10. Alternatively, the exposure process can also be performed based on drawing data related to the collective alignment mark that is stored in advance in a memory (not shown) of the exposure apparatus 10.

[0052] Next, the position measurement and alignment of the collective alignment mark will be described with reference to Figures 4 to 6. Exposure apparatus 10 can image the collective alignment mark formed on substrate W by the exposure process shown in Figure 3 using imaging section 60, and perform alignment mark extraction processing using image processing section 40. Exposure apparatus 10 also measures the position of the collective alignment mark using measurement section 300, and performs alignment.

[0053] FIG. 4 is a flow diagram showing the alignment process including measuring the position of the collective alignment mark.

[0054] When the imaging unit 60 captures an image of the substrate W, image data is acquired (S201, S202). Then, image processing is performed to extract a collective alignment mark (dot-shaped marks) from the image data (S203).

[0055] By the above-mentioned alignment mark forming process, a collective alignment mark is formed on the substrate W. On the other hand, for example, when a pattern is formed in the individual substrate area CS at the same time as forming the collective alignment mark, a pattern similar in shape and size to the dot-shaped mark may be formed near the boundary line BL of the individual substrate area CS. In order to eliminate such marks similar to the collective alignment mark, an area from which the collective alignment mark is extracted (hereinafter referred to as the extraction area) is specified here.

[0056] Fig. 5 is a diagram showing an extraction area. In Fig. 5(A), an alignment mark group L consisting of dot marks M arranged in a cross shape is extracted from image data by the extraction area TA. This makes it possible to exclude similar marks Mo that are close to the alignment mark group L.

[0057] The extraction area TA can be defined according to the collective alignment mark L set in step 102 of Fig. 2. Here, the collective alignment mark L is composed of a total of 13 dot marks M, seven of which are arranged along the X and Y directions, and a cross-shaped extraction area TA is defined according to the arrangement of the dot marks M. Here, the extraction area TA is defined so as to be aligned with the grid GR that defines the individual substrate region CS described above.

[0058] In addition, when a collective alignment mark LL is composed of dot marks M arranged in an L shape as shown in Fig. 3(A), an extraction area in an L shape can be defined. Also, as shown in Fig. 5(B), an extraction area TA' arranged in a matrix shape in accordance with the grid GR may be defined.

[0059] When the extraction process for the collective alignment mark is executed, a reference position of the collective alignment mark (hereinafter referred to as a representative position) is obtained (S204). Here, the representative position of the collective alignment mark can be obtained by one of the following two calculation methods.

[0060] Fig. 6 is a diagram showing two calculation methods for finding the representative position of a collective alignment mark. As one of the calculation methods, a calculation method is provided in which the position coordinates (X, Y coordinates) of each dot mark M are calculated and their average value is found as the representative position (hereinafter referred to as the average value calculation method). In addition, a calculation method is provided in which straight lines x and y along the X and Y directions of the dot mark M are defined and the intersection of the straight lines x and y is found as the representative position (hereinafter referred to as the intersection calculation method) (see Fig. 6(A)).

[0061] In the average value calculation method, the coordinates of the center of gravity of each dot mark are obtained, and the average value is calculated as the representative position (see symbol C0 in FIG. 6(A)). As described above, the dot marks arranged in a cross shape are arranged in equal numbers in both the X and Y directions so that the representative position of the collective alignment mark can be calculated. In other words, the arrangement is symmetrical with respect to the cross intersection position.

[0062] Since the dot marks are substantially circular, the center of gravity of each dot mark generally coincides with the center of the image data. The image processing for determining the center of gravity of each dot mark in the image data is well known, and therefore will not be described here.

[0063] In the intersection calculation method, first, the coordinates of the center of gravity of each dot mark are obtained. Then, based on the obtained coordinates of the center of gravity of each dot mark, straight lines x and y along the XY direction are defined. Then, the intersection of the defined straight lines x and y is calculated as the representative position of the collective alignment mark.

[0064] The average value calculation method is effective for collective alignment mark L in which dot marks M are arranged in a cross shape as shown in Fig. 3(A), and for collective alignment mark L' in which dot marks M are arranged so as to surround each individual substrate area CS. On the other hand, the intersection calculation method is effective for both collective alignment marks shown in Figs. 3(A) and (B). The operator can select a calculation method in accordance with the shape of the collective alignment mark that has been set. Alternatively, the exposure apparatus 10 may be configured to automatically set the calculation method.

[0065] 2, some dot marks may be missing due to stains, scratches, pattern loss due to polishing, etc. of the substrate W after the exposure process. Also, dot marks may not be extracted during image processing due to the lighting conditions at the time of imaging in the imaging unit 60, variations in the diameter of the dot marks, unevenness in the thickness of the photoresist applied on top of the dot marks, etc.

[0066] 6B shows the collective alignment marks LA and LB in which some dot marks are missing or could not be extracted. To deal with this, a representative position of the collective alignment marks is calculated by looking at some of the dot marks.

[0067] Specifically, in the case of the average calculation method, the average value is calculated excluding the dot marks (see symbol M') that are symmetrically positioned with respect to the crossover position. In other words, the average value is calculated excluding the dot marks that do not have a complementary symmetrical positional relationship.

[0068] In the case of the intersection calculation method, straight lines x and y along the XY directions are defined excluding missing or dot-shaped marks that could not be extracted, and the intersection point is calculated as the representative position.

[0069] After calculating the representative position of the collective alignment mark, the exposure position of each individual substrate area CS is calculated (S205). Here, the exposure position of each individual substrate area CS is obtained from the representative positions of all four collective alignment marks formed in the space SS near the four corners of each individual substrate area CS. However, if scaling and the like are not taken into consideration, it is possible to configure the exposure position of each individual substrate area CS to be obtained from the representative positions of at least two collective alignment marks on a diagonal line. The exposure position of each individual substrate area CS may also be obtained from the representative positions of three collective alignment marks.

[0070] Based on the determined exposure position of each individual substrate area, alignment (correction) is performed according to the deviation between the actually measured exposure position and the designed exposure position of the individual substrate area. Specifically, a correction process is performed on the drawing data. Then, an exposure process is performed to form a pattern at the exposure position corrected by the alignment (S206). Note that the processes of steps S202 to S205 may be configured to be performed in the control unit 20 or the like based on the execution of a program.

[0071] As described above, in the exposure apparatus 10 of this embodiment, it is possible to form collective alignment marks L, L', LL composed of dot-shaped marks M arranged in a cross shape or L shape, or dot-shaped marks M arranged so as to surround each individual substrate area CS, in spaces SS provided near the four corners of the gaps (cut spaces) SM of each individual substrate area CS on the substrate W.

[0072] Furthermore, in exposure apparatus 10, it is possible to determine the exposure position of each individual substrate area by imaging collective alignment mark L and measuring (calculating) the representative position of collective alignment mark L. Then, it is possible to perform alignment based on the determined exposure position and execute the exposure process.

[0073] When attempting to increase the mounting density of the individual substrate areas CS on the substrate W, the gaps SM between the individual substrate areas CS are limited in space. However, because of the configuration in which multiple dot-shaped marks M are formed, the alignment marks can be formed in a narrow space while being given a distinguishable size, and the alignment marks can be reliably extracted. Furthermore, even if there is some variation in the diameter size when the dot-shaped marks M are arranged, the alignment is obtained from the center of gravity, so the effect of alignment accuracy can be suppressed.

[0074] A collective alignment mark L, in which dot marks M are arranged in a cross or L shape, is provided in a space SS near the four corners outside the individual substrate area CS, not inside the individual substrate area CS. Therefore, the positions of the four corners of the individual substrate area CS can be accurately determined according to the accuracy of the arrangement (formation position) of the dot marks M, and as a result, accurate alignment can be performed. Even if a dot mark is missing or some dot marks are excluded by extraction processing based on image data, the exposure position can be appropriately determined by performing a mark exclusion process in both the average calculation method and the intersection calculation method.

[0075] Since no alignment marks are provided in the individual substrate area CS, it is possible to form circuit patterns up to the boundary line BL of the individual substrate area CS, and a high-density processing circuit pattern can be formed. In addition, since a method of extracting connection pads or the like as alternative alignment marks is not adopted, alignment can be performed with high accuracy regardless of the circuit forms of various patterns formed in each individual substrate area CS. Furthermore, image processing for extracting alignment marks is not complicated and complex, which contributes to improved productivity.

[0076] Since the dot-like marks M are formed along the boundary lines BL of the rectangular individual substrate area CS, the size and number of dot-like marks M to be arranged can be appropriately determined based on the specifications, characteristics, manufacturing conditions, etc. of the substrate W. Meanwhile, in the manufacturing process of the substrate W, the semiconductor packages of the individual substrate area CS are cut out, so the formation of the collective alignment marks L does not affect the quality of the semiconductor packages.

[0077] The substrate W is not limited to a resin substrate for printed wiring, and the collective alignment mark may be formed and aligned using a substrate such as a silicon wafer. In this case, the collective alignment mark is formed for the scribe line of the silicon wafer. Furthermore, the collective alignment mark may be formed and aligned using a substrate other than an FC-BGA substrate, such as a pseudo wafer of an FO-WLP. It is possible to use a multiple substrate, that is, a substrate in which multiple rectangular pattern regions are arranged in a matrix at a predetermined interval.

[0078] In this embodiment, both the formation of the collective alignment mark and the alignment are performed in the exposure apparatus, but the formation of the collective alignment mark and the alignment may be performed between different exposure apparatuses. It is also possible to form the collective alignment mark by processing using a laser processing apparatus. Alternatively, the position measurement and alignment of the collective alignment mark may be performed by a dedicated measuring device that detects the alignment mark. [Explanation of symbols]

[0079] 10 Exposure equipment 20 Control section 30 Measurement section 40 Image processing section 50 Exposure section 60 Imaging unit W substrate

Claims

1. forming a collective alignment mark at least in spaces provided near the four corners of each rectangular pattern area on a multiple substrate on which a plurality of rectangular pattern areas are defined; Taking an image of the multiple substrate; measuring a representative position of the collective alignment mark based on image data obtained by imaging; An alignment method for determining a pattern formation position of each rectangular pattern area based on a measured representative position of the collective alignment mark, comprising:

2. An alignment method comprising the steps of: providing a plurality of dot-shaped marks arranged in an L-shape or crossing each other along boundary lines of the rectangular pattern regions;

2. 2. The alignment method according to claim 1, wherein an average value of the positions of the plurality of dot marks contained in the image data is measured as a representative position of the collective alignment mark.

3. 3. The alignment method according to claim 2, further comprising the step of excluding dot marks not having a complementary symmetrical positional relationship from the image data.

4. 2. An alignment method according to claim 1, further comprising the steps of: defining two straight lines that intersect with each other along an array of dot marks contained in the image data; and measuring the intersection of the two straight lines as a representative position of the collective alignment mark.

5. 2. The alignment method according to claim 1, further comprising extracting dot marks arranged in a cross shape, an L shape or a matrix shape from image data obtained by imaging.

6. 2. The alignment method according to claim 1, wherein the collective alignment mark is formed such that the plurality of dot marks surround each rectangular pattern region.

7. 2. The alignment method according to claim 1, wherein the pattern formation position of each rectangular pattern area is determined based on the positions of at least two diagonal collective alignment marks among the collective alignment marks at the four corners of each rectangular pattern area.

8. forming a pattern on the multiple substrate aligned by the alignment method according to any one of claims 1 to 7; cutting out individual substrates formed according to each pattern area from the multiple substrate; A method for manufacturing a substrate, comprising:

9. For a multiple substrate having a plurality of rectangular pattern regions, a collective alignment mark is set to be formed in at least spaces provided near the four corners of each rectangular pattern region; An alignment mark forming method for forming a set collective alignment mark on the multiple substrate, comprising the steps of:

2. A method for forming an alignment mark, wherein the collective alignment mark includes a plurality of dot marks arranged in a cross shape or an L shape along boundary lines of the rectangular pattern regions.

10. taking an image of a multiple substrate on which a collective alignment mark is formed by the alignment mark forming method according to claim 9; A representative position of the collective alignment mark is measured from image data obtained by imaging. an alignment method comprising determining a pattern formation position of each rectangular pattern area based on the measured representative position of the collective alignment mark;

11. In an exposure device or laser processing device, A step of setting a collective alignment mark to be formed in at least spaces provided near the four corners of each rectangular pattern area on a multiple substrate having a plurality of rectangular pattern areas; forming a set collective alignment mark on the multiple substrate; A program for executing The program, wherein the collective alignment mark includes a plurality of dot-shaped marks arranged in a cross shape or an L shape along a boundary line of the plurality of rectangular pattern regions.

12. In an exposure apparatus or a measurement apparatus capable of measuring alignment marks, a step of measuring a representative position of the collective alignment mark from image data obtained by imaging a multiple substrate on which the collective alignment mark is formed by executing the program according to claim 11; determining a pattern formation position of each rectangular pattern area based on the measured representative position of the collective alignment mark; A program characterized by executing the above.

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