Wire substrate, electronic device, and electronic module

Abstract

To reduce generation of defects in a wire substrate and in an electronic device and an electronic module having the wire substrate.SOLUTION: A wire substrate (1) includes: an insulation substrate (10) mainly formed of aluminum nitride, a plurality of particles (15) combining with one another in the insulation substrate; an oxide titanium layer (31) located on the surface of the insulation substrate; and conductor layers (32, 33) located on the oxide titanium layer. The insulation substrate has an undulating surface caused by the shape or the arrangement of the particles and the oxide titanium layer covers the undulating surface.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present invention relates to a wiring board, an electronic device, and an electronic module. [Background technology]

[0002] 2. Description of the Related Art A wiring board in which a conductor layer made of metal is provided on an insulating substrate is known (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-125344 A Summary of the Invention [Problem to be solved by the invention]

[0004] If a defective portion such as a void exists in the conductor layer of such a wiring board, this may result in a conduction failure. An object of the present invention is to reduce the occurrence of defects in wiring boards. [Means for solving the problem]

[0005] The wiring board according to the present disclosure includes: An insulating substrate whose main component is aluminum nitride and in which a plurality of particles are bonded together; a titanium oxide layer located on a surface of the insulating substrate; a conductor layer located on the titanium oxide layer; Equipped with the insulating substrate has a surface having undulations caused by the shape and arrangement of the particles; The titanium oxide layer covers the undulations.

[0006] The electronic device of the present disclosure comprises: The above wiring board; and an electronic component mounted on the wiring board.

[0007] The electronic module of the present disclosure comprises: The electronic device described above; and a module substrate on which the electronic device is mounted. Effect of the Invention

[0008] According to the wiring board of the present disclosure, it is possible to reduce the occurrence of defects in the wiring board, and in electronic devices and electronic modules that include the wiring board. [Brief description of the drawings]

[0009] [Figure 1] 1 is a perspective view showing a wiring board according to an embodiment of the present disclosure. [Diagram 2] 2 is a cross-sectional view showing a main part of the wiring board of FIG. 1. [Diagram 3] FIG. 2 is a diagram illustrating a method for measuring the size of metal crystal grains. [Figure 4] 2 is a cross-sectional view showing a surface portion of a wiring board. [Diagram 5] 2 is a cross-sectional view showing a surface portion of a wiring board. [Figure 6] 13 is a cross-sectional view showing a modified example of the through portion. FIG. [Figure 7] 13 is a cross-sectional view showing a modified example of the through portion. FIG. [Figure 8] 13 is a cross-sectional view showing a modified example of the through portion. FIG. [Figure 9] 1 illustrates an electronic device and an electronic module according to an embodiment of the present disclosure. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. Fig. 1 is a perspective view showing a wiring board 1 according to an embodiment of the present disclosure. Fig. 2 is a cross-sectional view showing a main part of the wiring board 1 of Fig. 1. Fig. 3 shows a cross-section of a part of the wiring board 1 where a wiring conductor is located.

[0011] In the following, "vertical" includes not only a state that is strictly vertical, but also a state that can be considered to be substantially vertical. The "state that can be considered to be substantially vertical" is not limited to the range of manufacturing tolerance, and may be, for example, a state in which the angle between two directions is close to 90 degrees, more specifically, may be 80 degrees or more but less than 90 degrees, 85 degrees or more but less than 90 degrees, or 88 degrees or more but less than 90 degrees. Furthermore, when indicating a numerical range, "numerical value X to numerical value Y" means numerical value X or more and numerical value Y or less.

[0012] The wiring board 1 of this embodiment may include a first surface 11, a second surface 12, an insulating substrate 10, a first wiring conductor 21 located on the first surface 11, a second wiring conductor 23 located on the second surface 12, and a third wiring conductor 25. The second surface 12 may be located on the opposite side of the first surface 11. The insulating substrate 10 may have a through portion 13 extending from the first surface 11 to the second surface 12. The third wiring conductor 25 may be located in the through portion 13. The third wiring conductor 25 may be located from the first opening 13a on the first surface 11 side of the through portion 13 to the second opening 13b on the second surface 12 side. The third wiring conductor 25 may be electrically connected to the first wiring conductor 21 and the second wiring conductor 23. That is, the third wiring conductor 25 may be a through via conductor.

[0013] The insulating substrate 10 may be a ceramic containing aluminum nitride as a main component. The main component is the component with the highest content, and may be a component that is contained at 80 mass % or more. The insulating substrate 10 may also be containing silicon nitride, aluminum oxide, silicon carbide, or zirconia as a main component. The insulating substrate 10 may also be so-called glass, which is an amorphous solid containing silicate or the like as a main component. The main component of the insulating substrate 10 may be selected depending on the application of the wiring board 1. For example, when the main component is aluminum nitride, the wiring board 1 can have good thermal conductivity. When the main component is aluminum oxide, the wiring board 1 can be easily made thin due to its high rigidity. When the main component is silicon nitride, the wiring board 1 can have high toughness.

[0014] 2, the through portion 13 has a first opening 13a on the first surface 11 side and a second opening 13b on the second surface 12 side. A third wiring conductor 25 may be located in the through portion 13, the first opening 13a, and the second opening 13b. The inner surface of the through portion 13 may be a surface perpendicular to the first surface 11 and the second surface 12. An end portion of the inner surface of the through portion 13 located at the first opening 13a may be a first end portion closer to the first surface 11. An end portion of the inner surface of the through portion 13 located at the second opening 13b may be a second end portion farther from the first surface 11. That is, the third wiring conductor 25 is located continuously from the first end portion to the second end portion.

[0015] The wiring board 1 may also have a non-penetrating hole or groove. The non-penetrating hole or groove may have a first opening 13a opening on the first surface 11. On the inner surface of the non-penetrating hole or groove, an end located at the first opening 13a may be a first end closer to the first surface 11. On the inner surface of the non-penetrating hole or groove, an end adjacent to the innermost part that is the bottom of the hole or groove may be a second end farther from the first surface 11. The non-penetrating hole or groove may have a third wiring conductor 25 having a configuration similar to that of the through portion 13. The third wiring conductor 25 included in the non-penetrating hole or groove opening on the first surface 11 may be electrically connected to the first wiring conductor 21 located on the first surface 11.

[0016] In the following description, when referring to a hole or groove, the "hole or groove" includes not only a through portion 13 that penetrates from the first surface 11 to the second surface 12, but also non-through holes and grooves that have a first opening 13a that opens into the first surface 11. In addition, when referring to the surface of insulating substrate 10, "the surface of insulating substrate 10" includes the surface of first surface 11, the surface of second surface 12, the inner surface of through portion 13, and the inner surfaces and bottom surfaces of non-through holes or grooves.

[0017] The first wiring conductor 21, the second wiring conductor 23, and the third wiring conductor 25 may include a titanium oxide layer 31, a first conductor layer 32, and a second conductor layer 33. The titanium oxide layer 31 may be in contact with the surface of the insulating substrate 10. The first conductor layer 32 may be in contact with the titanium oxide layer 31. The second conductor layer 33 may be in contact with the first conductor layer 32.

[0018] The titanium oxide layer 31 is a layer containing titanium oxide. This titanium oxide layer 31 covers the surface of the insulating substrate 10 in the portion where the wiring conductor is located. In particular, in the through portion 13, the titanium oxide layer 31 is continuous from the first end to the second end of the inner surface. The first conductor layer 32 and the second conductor layer 33 are layers made of metal. The first conductor layer 32 may be an electroless plated layer. The second conductor layer 33 may be an electrolytic plated layer. The metal used in the first conductor layer 32 and the second conductor layer 33 may be copper, nickel, cobalt, iron, or the like. The metal used in the first conductor layer 32 and the metal used in the second conductor layer 33 may be the same type or different types. For example, copper may be used for the first conductor layer 32 and nickel may be used for the second conductor layer 33.

[0019] A first diffusion layer 34 may be present at the interface between the insulating substrate 10 and the titanium oxide layer 31. In this embodiment, the first diffusion layer 34 is formed by diffusing elements contained in the insulating substrate 10 and the titanium oxide layer 31. When the first diffusion layer 34 is present, the adhesion between the insulating substrate 10 and the titanium oxide layer 31 is improved. Furthermore, a second diffusion layer 35 may be present at the interface between the titanium oxide layer 31 and the first conductor layer 32. In this embodiment, the second diffusion layer 35 is formed by diffusing elements contained in the titanium oxide layer 31 and the first conductor layer 32. When the second diffusion layer 35 is present, the adhesion between the titanium oxide layer 31 and the first conductor layer 32 is improved.

[0020] <Metal grain size> The first conductor layer 32 and the second conductor layer 33 are polycrystalline metals consisting of a plurality of metal crystal grains 37. In Fig. 2 and Fig. 3, the metal crystal grains 37 are illustrated diagrammatically. The actual metal crystal grains 37 have various shapes, such as granular and columnar, and vary in size. In this embodiment, the size of the metal crystal grains is a cross-sectional dimension measured using a SEM (Scanning Electron Microscope), and is a size expressed in units of length.

[0021] Since the metal crystal grains 37 have various shapes such as granular and columnar, the average size of each metal crystal grain 37 is obtained as follows. Fig. 3 is a diagram explaining a method for measuring the size of the metal crystal grains. The size of the metal crystal grains can be measured using an SEM in a cross section including the first conductor layer 32 and the second conductor layer 33. 1. In an SEM image or SIM image of a cross section including the first conductor layer 32 and the second conductor layer 33, the boundary (grain boundary) lines of each metal crystal grain 37 are extracted. 2. From the above image, an area large enough to contain 20 to 100 metal crystal grains 37 is arbitrarily selected as the target area R. Note that, for example, the target area R can be determined by determining the boundary between different grain sizes from the above image. Also, the metal crystal grains 37 are simplified in FIG. 3, and the number of metal crystal grains 37 in the target area R differs from the actual number. A plurality of target areas R are selected from the conductor layer to be measured. 3. Count the number of metal crystal grains 37 in each target region R, and divide the area of ​​each region by the number to calculate the average cross-sectional area of ​​each metal crystal grain 37. Furthermore, assume that the cross-sectional shape of each metal crystal grain 37 is circular, calculate the diameter of the circle from the area, and regard the diameter as the average size of the metal crystal grains 37.

[0022] The average size of the metal crystal grains 37 in the first conductor layer 32 is smaller than the average size of the metal crystal grains 37 in the second conductor layer 33. The difference in the average sizes of the metal crystal grains 37 is a difference on a level that exceeds the error. The difference on a level that exceeds the error may mean a difference of 1.5 times or more or 2 times or more the standard deviation σ of the sizes of the metal crystal grains 37 measured in any part.

[0023] The average size of the metal crystal grains 37 of the first conductor layer 32 is smaller than the average size of the metal crystal grains 37 of the second conductor layer 33, which provides the effect of improving resistance to electromigration.

[0024] <Surface structure> 4 and 5 are vertical cross-sectional views of the vicinity of the surface of the wiring board 1 in a portion where the first wiring conductor 21, the second wiring conductor 23, and the third wiring conductor 25 are located. The insulating substrate 10 may have a structure in which a plurality of particles 15 are sintered and densified. The particles 15 may have different shapes. Therefore, the surface of the insulating substrate 10 has undulations due to the shapes and arrangement of the particles 15. In other words, the surface of the insulating substrate 10 has projections and recesses.

[0025] The titanium oxide layer 31 is positioned so as to cover the undulations present on the surface of the insulating substrate 10. This means that the titanium oxide layer 31 is continuous from the concave portions to the convex portions present on the surface of the insulating substrate 10. It can also be said that the titanium oxide layer 31 is continuous along the undulations present on the surface of the insulating substrate 10. There is no portion on the titanium oxide layer 31 where the surface of the insulating substrate 10 is exposed, and it can also be said that the titanium oxide layer 31 is continuous without interruption.

[0026] With the titanium oxide layer 31 positioned in this manner, the first conductor layer 32 along the titanium oxide layer 31 becomes continuous with the wiring conductor. Furthermore, the second conductor layer 33 along the first conductor layer 32 also becomes continuous with the wiring conductor. Therefore, no voids exist in the first wiring conductor 21, the second wiring conductor 23, and the third wiring conductor 25. This can reduce the occurrence of defects in the wiring board 1.

[0027] The surface condition of insulating substrate 10 varies depending on the material of insulating substrate 10, the pretreatment process performed on insulating substrate 10 before titanium oxide layer 31 is provided, and the like. In the state of the surface of insulating substrate 10 shown in Fig. 4, the surface particles have fallen off at the grain boundaries, which are the boundaries between particles 15 when sintered and densified. In other words, most of the particles 15 located on the surface of insulating substrate 10 retain the shape they had when sintered and densified, and the faces that were the grain boundaries are in contact with titanium oxide layer 31. Furthermore, there are almost no portions 38 where particles 15 located on the surface are separated from adjacent particles 15. Furthermore, the arithmetic mean height Sa, which is a parameter representing surface roughness, is in the range of 0.3 µm to 1.3 µm. Such a surface state is often seen, for example, in the case of insulating substrate 10 mainly composed of aluminum nitride, when pretreatment includes a dissolution step in which the surface of insulating substrate 10 is dissolved.

[0028] In the state of the surface of insulating substrate 10 shown in Fig. 5, the surface particles 15 have been scraped off to form a smooth surface. Although there are undulations due to the shape and arrangement of particles 15, the surface is smoother and has fewer undulations than the surface state shown in Fig. 4. That is, some of the particles 15 located on the surface of insulating substrate 10 are smaller than their shape after sintering and densification, and there are portions where surfaces that were not grain boundaries are in contact with titanium oxide layer 31. In addition, there are portions 38 where surface particles 15 are separated from adjacent particles 15, and the number of separated portions 38 is greater than in the state of the surface of insulating substrate 10 shown in Fig. 4. Such a surface state is often seen, for example, when the pretreatment includes a polishing step for polishing the surface of the insulating substrate 10.

[0029] In the wiring board 1 of the present disclosure, the titanium oxide layer 31 continuously covers the surface of the insulating substrate 10 regardless of the difference in the surface condition of the insulating substrate 10 as shown in Fig. 4 and Fig. 5. In other words, the titanium oxide layer 31 continuously covers the surface of the insulating substrate 10 regardless of the surface roughness of the insulating substrate 10. The presence of undulations on the surface of insulating substrate 10 due to the shape and arrangement of particles 15 has an anchor effect, which enhances the adhesion of titanium oxide layer 31. In particular, the surface state shown in Fig. 4 is rougher than the surface state shown in Fig. 5, and has fewer portions 38 separated from adjacent particles 15, so that titanium oxide layer 31 has high adhesion.

[0030] Furthermore, the titanium oxide layer 31 may be configured to continuously cover the surface of one insulating substrate 10 even if there are portions with different surface conditions. For example, in the structure shown in Fig. 2, even if the surface conditions of the first surface 11, the second surface 12, and the through-hole 13 of the insulating substrate 10 are different, the titanium oxide layer 31 may be configured to continuously cover the surface of the insulating substrate 10. In other words, even if the first surface 11 and the second surface 12 have the surface condition shown in Fig. 5 and the through-hole 13 has the surface condition shown in Fig. 4, the titanium oxide layer 31 may be configured to continuously cover the surface of the insulating substrate 10.

[0031] <Hole or groove structure> The relationship between the depth of the hole or groove and the width of the opening can be expressed by the aspect ratio, which is calculated by the following formula: Aspect ratio = (depth of hole or groove) / (width of hole or groove opening) The depth of a non-penetrating hole or groove is the length from the opening to the innermost part which is the bottom of the hole or groove. The depth of a penetrating hole such as through-hole 13 is the length from first opening 13a to second opening 13b opposite to first opening 13a. The width of the opening of a hole or groove is the diameter of the circle if the opening is circular. If the opening is not circular, the width of the opening of a hole or groove is the length of the shortest straight line that passes through the center of the opening and connects the opposing ends of the opening, i.e., the width of the narrowest part of the opening.

[0032] The larger the aspect ratio, the more difficult it becomes to form titanium oxide layer 31 on the inner surface of the hole or groove. Therefore, the aspect ratio of the hole or groove in insulating substrate 10 is preferably 1 to 8, and more preferably 2 to 6, in the case of a through hole. In the case of a non-through hole or groove, it is preferably 0.5 to 4, and more preferably 1 to 3.

[0033] The inner side surface of the hole or groove is not limited to being perpendicular to the first surface 11 and the second surface 12 as shown in Fig. 1, and may have another shape. Figs. 6 to 8 show examples of the cross-sectional shape of the through portion 13. The internal width of the through portion 13 may be narrower than the widths of the first opening 13a and the second opening 13b. The through portion 13 shown in Fig. 6 has a shape in which the width gradually narrows from the first opening 13a and the second opening 13b toward the center of the through portion 13. In other words, the through portion 13 has a portion with a diameter d3 narrower than the diameter d1 of the first opening 13a and the diameter d2 of the second opening 13b. 7, the width of the through portion 13 gradually narrows from the first opening 13a to the second opening 13b. That is, the diameter d3 of each portion of the through portion 13 is narrower than the diameter d1 of the first opening 13a and wider than the diameter d2 of the second opening 13b. That is, the shapes shown in Figs. 6 and 7 are shapes in which the inner diameter of the hole is narrower than the diameter of at least one of the openings. The shape shown in FIG. 6 is often seen when through-holes 13 are formed by blasting from both first surface 11 and second surface 12 of insulating substrate 10. The shape shown in FIG. 7 is often seen when through-hole 13 is formed by laser processing from first surface 11 side of insulating substrate 10.

[0034] Also, the width inside the through-hole 13 may be wider than the width of the opening. The through-hole 13 shown in Fig. 8 has an expanded diameter portion having a diameter d3 wider than the diameter d1 of the first opening 13a and the diameter d2 of the second opening 13b. The position of the expanded diameter portion is close to the first opening 13a, but is not limited thereto, and it may be in the center of the through-hole 13 or close to the second opening 13b. The width of the through portion 13 gradually increases from the center to the second opening 13b. That is, there is a reduced diameter portion having a diameter d4 that is narrower than the diameter d2 of the second opening 13b. The diameter d4 of the reduced diameter portion and the diameter d1 of the first opening 13a may be the same or different.

[0035] That is, the shape shown in Fig. 8 has a portion where the inner diameter of the hole is wider than the diameter of both openings. Also, the shapes in Figs. 1 and 8 can be said to have a region that passes through the first opening 13a or the second opening 13b and does not intersect with a straight line along the depth direction of the hole or groove. Also, the shapes in Figs. 1 and 8 can be said to have a region that passes through the first opening 13a or the second opening 13b and does not intersect with a straight line perpendicular to the first surface 11 or the second surface 12. The shapes shown in Figs. 1 and 8 are often seen when penetrating portions 13 are formed by punching from the first surface 11 side of a green sheet in an unsintered state.

[0036] The present disclosure is applicable to any shape of through-hole 13. That is, even in the case of through-hole 13 having any of these shapes, titanium oxide layer 31 continuously covers the inner side surface, which is the front surface of insulating substrate 10, from first opening 13a to second opening 13b. Also, for holes and grooves that do not penetrate, the width of the inside may be narrower than the width of the opening, or the width of the inside may be wider than the width of the opening. For example, the shape may have a cross section as shown in Figures 1, 6, 7, and 8, with one opening closed. The titanium oxide layer 31 continuously covers the inner surface and bottom surface, which are the surface of the insulating substrate 10, of holes and grooves that do not penetrate and have these shapes. This makes it possible to arrange the first conductor layer 32 and the second conductor layer 33 so that they are continuous in the wiring conductor, regardless of the shape of the hole or groove.

[0037] <Thickness of titanium oxide layer> The thickness of the titanium oxide layer 31 is preferably 10 nm or more and 80 nm or less, and more preferably 20 nm or more and 60 nm or less. If the titanium oxide layer 31 is thin, it can be applied to a fine structure. When the thickness is within the above range, the titanium oxide layer 31 is uniformly positioned in the holes or grooves, and the wiring conductor has no portion where the titanium oxide layer 31 is thicker than necessary.

[0038] Furthermore, the thickness of titanium oxide layer 31 on first surface 11 or second surface 12 is preferably in the range of 20 nm to 60 nm. When the thickness of titanium oxide layer 31 on first surface 11 or second surface 12 is within the above range, removal by etching becomes easier.

[0039] In this embodiment, the titanium oxide layer may be formed by coating the surface of the insulating substrate 10 with organic titanium and then oxidizing the coated organic titanium. In this case, the wiring substrate 1 of the present disclosure can be manufactured more efficiently than when a titanium-containing layer is formed by other means such as sputtering. For example, according to this method for forming a titanium oxide layer, a titanium film can be uniformly formed on the surface of the insulating substrate 10, including the inner side and bottom surface of the hole or groove. This allows the titanium oxide layer 31 to cover the undulations caused by the shape and arrangement of the particles located on the surface of the insulating substrate 10. In addition, on the inner side of the hole or groove, the titanium oxide layer 31 is positioned continuously from the first end close to the first surface 11 to the second end far from the first surface 11. This allows the first conductor layer 32 and the second conductor layer 33 to be continuous from the first end to the second end, resulting in a third wiring conductor 25 without voids. 1 and 8, titanium oxide layer 31 can be easily formed by the above-mentioned formation method. Furthermore, since titanium exists as titanium oxide, which has no electrical conductivity, measures against the risk of short circuiting can be easily taken compared to the case where titanium exists in a conductive state.

[0040] <Electronic devices and electronic modules> FIG. 9 is a cross-sectional view illustrating an electronic device and an electronic module according to an embodiment of the present disclosure. An electronic device 60 according to this embodiment is configured by mounting an electronic component 50 on a wiring board 1. The electronic component 50 has a terminal connected to a first wiring conductor 21, and the terminal may be electrically connected to a second wiring conductor 23 on the second surface 12 side via the first wiring conductor 21 and the third wiring conductor 25. A Ni film may be provided on the surfaces of the first wiring conductor 21 and the second wiring conductor 23.

[0041] Examples of the electronic component 50 that can be used include optical elements such as LD (Laser Diode), PD (Photo Diode), and LED (Light Emitting Diode), imaging elements such as CCD (Charge Coupled Device) type and CMOS (Complementary Metal Oxide Semiconductor) type, piezoelectric vibrators such as quartz vibrators, surface acoustic wave elements, semiconductor elements such as semiconductor integrated circuit elements (IC: Integrated Circuit), electrocapacitive elements, inductor elements, resistors, and various other electronic components. In particular, when the main component of insulating substrate 10 is aluminum nitride, wiring substrate 1 can be obtained with good thermal conductivity, and can be suitably used as a wiring substrate for in-vehicle headlight LEDs, industrial lasers, and the like.

[0042] The electronic module 100 according to this embodiment is configured by mounting an electronic device 60 on a module substrate 110. In addition to the electronic device 60, other electronic devices, electronic elements, electric elements, etc. may be mounted on the module substrate 110. Electrode pads 111 may be provided on the module substrate 110, and the wiring conductors 23 of the electronic device 60 may be joined to the electrode pads 111 via a joining material 113 such as solder.

[0043] The above describes the embodiments of the present disclosure. However, the wiring board 1, the electronic device 60, and the electronic module 100 of the present disclosure are not limited to the above embodiments. For example, in the above embodiments, the first wiring conductor 21 and the second wiring conductor 23 are exposed on the outer surface of the wiring board 1, and the third wiring conductor 25 is located between the two wiring conductors exposed on the outer surface of the wiring board 1. However, the wiring conductors may be wiring layers located inside the multilayer wiring board, and the third wiring conductor 25 may be interlayer vias of the multilayer wiring board. Moreover, the third wiring conductor 25 may be a conductor constituting a through hole or a conductor constituting a castellation.

[0044] In one embodiment, (1) The wiring board is An insulating substrate having a first surface and a hole or a groove opening on the first surface; a titanium oxide layer located in the hole or the groove of the insulating substrate; a conductor layer located on the titanium oxide layer; Equipped with The hole or the groove has an inner surface, the inner surface has a first end proximate the first surface and a second end distal to the first surface; The titanium oxide layer is located continuously from the first end to the second end of the inner surface.

[0045] (2) The wiring board is An insulating substrate whose main component is aluminum nitride and in which a plurality of particles are bonded together; a titanium oxide layer located on a surface of the insulating substrate; a conductor layer located on the titanium oxide layer; Equipped with the insulating substrate has a surface having undulations caused by the shape and arrangement of the particles; The titanium oxide layer covers the undulations.

[0046] (3) The wiring board of (2) further comprises: the insulating substrate has a first surface and a hole or a groove opening in the first surface; The hole or the groove has an inner surface that is a part of the surface, the inner surface has a first end proximate the first surface and a second end distal to the first surface; The titanium oxide layer may be located continuously from the first end to the second end of the inner surface.

[0047] (4) Any of the wiring boards described above in (1) to (3) further comprises: The titanium oxide layer may be provided on the entire inner surface.

[0048] (5) Any of the wiring boards described above in (1) to (4) further comprises: The insulating substrate is A second surface opposed to the first surface, The hole is The through hole may extend from the first surface to the second surface.

[0049] (6) Any of the wiring boards described above in (1) to (5) further comprises: a first diffusion layer is provided at an interface between the titanium oxide layer and the insulating substrate; The first diffusion layer is The elements contained in the titanium oxide layer and the insulating substrate may be diffused.

[0050] (7) Any of the wiring boards described above in (1) to (6) further comprises: a second diffusion layer is provided at the interface between the titanium oxide layer and the conductor layer; The second diffusion layer is The elements contained in the titanium oxide layer and the conductor layer may be diffused.

[0051] (8) Any of the wiring boards described above in (1) to (7) further comprises: The conductor layer is It is made of metal, a first conductor layer in contact with the titanium oxide layer; a second conductor layer located on a side opposite to the titanium oxide layer with the first conductor layer interposed therebetween; The average size of the metal crystal grains in the first conductor layer may be smaller than the average size of the metal crystal grains in the second conductor layer.

[0052] (9) Any of the wiring boards described above in (1) to (8) further comprises: the first conductor layer is an electroless plating layer, The second conductive layer may be an electrolytically plated layer.

[0053] (10) Electronic equipment: Any one of the wiring boards (1) to (9) above; and an electronic component mounted on the wiring board.

[0054] (11) The electronic module is The electronic device according to (10) above; and a module substrate on which the electronic device is mounted. [Explanation of symbols]

[0055] 1. Wiring board 10 Insulating substrate 11 Page 1 12 Side 2 13 Penetration 13a 1st opening 13b 2nd opening 15 particles 31 Titanium oxide layer 32 First conductor layer 33 Second conductor layer 34 First diffusion layer 35 Second diffusion layer 50 Electronic Components 60 Electronic equipment 100 Electronic Module

Claims

1. An insulating substrate whose main component is aluminum nitride and in which a plurality of particles are bonded together; a titanium oxide layer located on a surface of the insulating substrate; a conductor layer located on the titanium oxide layer; Equipped with the insulating substrate has a surface having undulations caused by the shape and arrangement of the particles; The titanium oxide layer covers the undulations of the wiring board.

2. The insulating substrate has a first surface and a hole or a groove opening in the first surface, The hole or the groove has an inner surface that is a part of the surface, the inner surface has a first end proximate the first surface and a second end distal to the first surface; The wiring board according to claim 1 , wherein the titanium oxide layer is located continuously from the first end to the second end of the inner surface.

3. The wiring board according to claim 2 , wherein the titanium oxide layer is provided on the entire inner surface.

4. The insulating substrate is A second surface opposed to the first surface, The hole is The wiring board according to claim 3 , wherein the through hole extends from the first surface to the second surface.

5. a first diffusion layer is provided at an interface between the titanium oxide layer and the insulating substrate; The first diffusion layer is 5. The wiring board according to claim 4, wherein elements contained in the titanium oxide layer and the insulating substrate are diffused.

6. a second diffusion layer is provided at an interface between the titanium oxide layer and the conductor layer; The second diffusion layer is The wiring board according to claim 5 , wherein elements contained in the titanium oxide layer and the conductor layer are diffused.

7. The conductor layer is It is made of metal, a first conductor layer in contact with the titanium oxide layer; a second conductor layer located on a side opposite to the titanium oxide layer with the first conductor layer interposed therebetween; 7. The wiring board according to claim 6, wherein an average size of the metal crystal grains in the first conductor layer is smaller than an average size of the metal crystal grains in the second conductor layer.

8. the first conductor layer is an electroless plating layer, The wiring board according to claim 7 , wherein the second conductor layer is an electrolytic plating layer.

9. The wiring board according to claim 1 , and an electronic component mounted on the wiring board.

10. An electronic device according to claim 9; and a module substrate on which the electronic device is mounted.

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