Substrate processing apparatus and substrate map generation method

Abstract

To provide a technique capable of generating a substrate map.SOLUTION: A substrate processing apparatus according to an aspect of the present disclosure comprises: a vacuum case; a rotational table provided into the vacuum case; a plurality of mounting stages that are provided along a peripheral direction of the rotational table, and each mount a substrate; and a measurement device that measures a characteristic of the substrate mounted to the mounting stage. Each mounting stage is constructed so as to be relatively rotated to the rotational table. The measurement device is provided on a circumference of a circle passing through each mounting stage using a center shaft of the rotational table as a center in a plan view from a direction vertical to an upper surface of the rotational table.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a method for generating a substrate map. [Background technology]

[0002] 2. Description of the Related Art There is known a technique for monitoring the film thickness and warpage of a substrate placed on a turntable while rotating the turntable (see, for example, Patent Documents 1 and 2). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2010-206026 A [Patent Document 2] JP 2019-16662 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides techniques that allow for the generation of a substrate map. [Means for solving the problem]

[0005] A substrate processing apparatus according to one aspect of the present disclosure includes a vacuum container, a rotating table provided within the vacuum container, and a plurality of mounting tables provided along a circumferential direction of the rotating table, each of which supports a substrate, and a measuring device for measuring characteristics of the substrates placed on the mounting tables, wherein the mounting tables are configured to be rotatable relative to the rotating table, and the measuring device is provided on the circumference of a circle passing through the mounting tables and centered on the central axis of the rotating table when viewed in a plane from a direction perpendicular to the top surface of the rotating table. Effect of the Invention

[0006] According to the present disclosure, a substrate map can be generated. [Brief description of the drawings]

[0007] [Figure 1] 1 is a cross-sectional view showing an example of the configuration of a substrate processing apparatus according to an embodiment; [Diagram 2] 2 is a plan view showing a configuration inside a vacuum chamber of the substrate processing apparatus of FIG. 1. [Diagram 3] 2 is a perspective view showing the configuration of a turntable and a mounting table of the substrate processing apparatus of FIG. 1. [Figure 4] 2 is a cross-sectional view showing a configuration inside a storage box of the substrate processing apparatus of FIG. [Diagram 5] FIG. 13 is a diagram illustrating the position where a height measuring device is provided. [Figure 6] FIG. 13 is a diagram showing positions on a substrate that are measured when the rotary table makes one revolution. [Figure 7] FIG. 13 is a diagram showing positions on a substrate that are measured when the turntable is rotated twice. [Figure 8] FIG. 13 is a diagram showing positions on a substrate that are measured when the turntable is rotated three times. [Figure 9] FIG. 13 is a diagram showing positions on a substrate that are measured when the rotary table is rotated eight times. [Figure 10] FIG. 13 is a diagram illustrating an example of a data table. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, non-limiting exemplary embodiments of the present disclosure will be described with reference to the accompanying drawings. In all of the accompanying drawings, the same or corresponding members or parts are designated by the same or corresponding reference numerals, and duplicated descriptions will be omitted.

[0009] (Substrate processing equipment) A substrate processing apparatus 300 according to an embodiment will be described with reference to FIGS. 1 to 5. FIG. 1 is a cross-sectional view showing an example of the configuration of the substrate processing apparatus 300 according to an embodiment. FIG. 2 is a plan view showing the configuration inside a vacuum container 311 of the substrate processing apparatus 300 of FIG. 1. For convenience of explanation, a top plate 311b is omitted from FIG. 2. FIG. 3 is a perspective view showing the configuration of a turntable 321 and a mounting table 321a of the substrate processing apparatus 300 of FIG. 1. FIG. 4 is a cross-sectional view showing the configuration inside a storage box 322 of the substrate processing apparatus 300 of FIG. 1. FIG. 5 is a view explaining the position where a height measuring device 330 is provided.

[0010] The substrate processing apparatus 300 includes a processing section 310 , a rotary drive device 320 , a height measuring device 330 , and a control section 390 .

[0011] The processing section 310 has a vacuum vessel 311 , a gas inlet 312 , a gas exhaust port 313 , a transfer port 314 , and a heating section 315 .

[0012] The vacuum vessel 311 is a processing vessel capable of reducing the pressure inside. The vacuum vessel 311 has a flat shape having a substantially circular planar shape. The vacuum vessel 311 accommodates a plurality of substrates W therein. The substrates W may be, for example, semiconductor wafers.

[0013] The vacuum vessel 311 includes a main body 311a, a top plate 311b, a side wall 311c, and a bottom plate 311d. The main body 311a has a cylindrical shape. The top plate 311b is disposed on the upper surface of the main body 311a in an airtight and detachable manner via a seal portion 311e. A window 311w is provided in a part of the top plate 311b. The window 311w is provided with, for example, quartz glass, and is configured so that the inside of the vacuum vessel 311 can be seen from the outside. The side wall 311c is connected to the lower surface of the main body 311a and has a cylindrical shape. The bottom plate 311d is disposed on the bottom surface of the side wall 311c in an airtight manner.

[0014] The gas introduction unit 312 includes a source gas nozzle 312a, a reaction gas nozzle 312b, and separation gas nozzles 312c and 312d. The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d are arranged above the turntable 321 at intervals in the circumferential direction of the vacuum container 311. For example, as shown by the arrow A in FIG. 2, the separation gas nozzle 312c, the source gas nozzle 312a, the separation gas nozzle 312d, and the reaction gas nozzle 312b are arranged in this order clockwise (the rotation direction of the turntable 321) from the transfer port 314. Gas introduction ports 312a1, 312b1, 312c1, and 312d1, which are base ends of the source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c and 312d, are fixed to the outer wall of the main body 311a. The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c, 312d are introduced into the vacuum vessel 311 from the outer wall of the vacuum vessel 311 and attached so as to extend horizontally along the radial direction of the main body 311a relative to the rotary table 321. The source gas nozzle 312a, the reaction gas nozzle 312b, and the separation gas nozzles 312c, 312d are made of, for example, quartz.

[0015] The raw material gas nozzle 312a is connected to a raw material gas supply source (not shown) via piping and a flow rate controller (not shown). For example, a silicon-containing gas or a metal-containing gas can be used as the raw material gas. The raw material gas nozzle 312a has a plurality of discharge holes (not shown) that open toward the rotary table 321 and are arranged at intervals along the length of the raw material gas nozzle 312a. The raw material gas nozzle 312a discharges the raw material gas from the plurality of discharge holes. The region below the raw material gas nozzle 312a becomes a raw material gas adsorption region P1 for adsorbing the raw material gas onto the substrate W.

[0016] The reactive gas nozzle 312b is connected to a reactive gas supply source (not shown) via piping and a flow rate controller (not shown). For example, an oxidizing gas or a nitriding gas can be used as the reactive gas. The reactive gas nozzle 312b has a plurality of discharge holes (not shown) that open toward the turntable 321 and are arranged at intervals along the length of the reactive gas nozzle 312b. The reactive gas nozzle 312b discharges a reactive gas from the plurality of discharge holes. The region below the reactive gas nozzle 312b becomes a reactive gas supply region P2 that oxidizes or nitrides the source gas adsorbed on the substrate W in the source gas adsorption region P1.

[0017] The separation gas nozzles 312c, 312d are both connected to a separation gas supply source (not shown) via piping and a flow control valve (not shown). The separation gas may be, for example, an inert gas such as argon (Ar) gas or nitrogen (N2) gas. The separation gas nozzles 312c, 312d have a plurality of discharge holes (not shown) that open toward the rotary table 321 and are arranged at intervals along the length of the separation gas nozzles 312c, 312d. The separation gas nozzles 312c, 312d discharge the separation gas from the plurality of discharge holes.

[0018] The gas introduction section 312 may include a purge gas introduction section (not shown) that supplies a purge gas below the rotary table 321. As the purge gas, for example, the same gas as the separation gas can be used.

[0019] Two convex portions 317 are provided in the vacuum vessel 311. The convex portions 317 are attached to the rear surface of the top plate 311b so as to protrude toward the rotary table 321. The convex portions 317, together with the separation gas nozzles 312c, 312d, form a separation region D. The convex portions 317 have a sectorial planar shape with the top cut into an arc shape. The inner arc of the convex portion 317 is connected to the protruding portion 318. The outer arc of the convex portion 317 is disposed along the inner wall of the main body 311a.

[0020] The gas exhaust port 313 includes a first exhaust port 313a and a second exhaust port 313b. The first exhaust port 313a is formed at the bottom of the first exhaust region E1. The first exhaust region E1 is connected to the source gas adsorption region P1. The second exhaust port 313b is formed at the bottom of the second exhaust region E2. The second exhaust region E2 is connected to the reaction gas supply region P2. The first exhaust port 313a and the second exhaust port 313b are connected to an exhaust device (not shown) including a vacuum pump or the like via an exhaust pipe (not shown). A pressure control valve (not shown) is provided in the exhaust pipe.

[0021] The transfer port 314 is provided in a side wall of the vacuum vessel 311. The transfer port 314 is an opening for transferring the substrate W between the rotary table 321 and the transfer arm 314a. The transfer port 314 is opened and closed by a gate valve (not shown).

[0022] The heating section 315 includes a fixed shaft 315a, a heater support section 315b, and a heater 315c.

[0023] Fixed shaft 315a has a cylindrical shape with its central axis at the center of vacuum vessel 311. Fixed shaft 315a is provided inside revolution shaft 323, penetrating bottom plate 311d. Seal portion 315d is provided between the outer wall of fixed shaft 315a and the inner wall of revolution shaft 323. This allows revolution shaft 323 to rotate relative to fixed shaft 315a while maintaining the airtight state inside vacuum vessel 311. Seal portion 315d includes, for example, a magnetic fluid seal.

[0024] The heater support portion 315b is fixed to the upper portion of the fixed shaft 315a and has a disk shape, and supports the heater 315c.

[0025] The heater 315c is provided on an upper surface of the heater support portion 315b. The heater 315c may be provided on the main body 311a in addition to the upper surface of the heater support portion 315b. The heater 315c heats the substrate W.

[0026] The rotary drive device 320 includes a rotary table 321 , a storage box 322 , a revolution shaft 323 , and a revolution motor 324 .

[0027] The turntable 321 is provided in the vacuum vessel 311. The turntable 321 has a center of rotation at the center of the vacuum vessel 311. The turntable 321 has, for example, a disk shape. The turntable 321 is formed of, for example, quartz. The turntable 321 is connected to the storage box 322 via a plurality of connection parts 321d. The turntable 321 has a plurality of (for example, five) openings 321h. The plurality of openings 321h are provided at intervals from each other along the rotation direction of the turntable 321. Each opening 321h is provided at a position spaced apart from the rotation center of the turntable 321.

[0028] The mounting table 321a is provided at a position overlapping with the opening 321h in a plan view. A plurality of mounting tables 321a are provided along the rotation direction of the turntable 321. The number of mounting tables 321a is the same as the number of openings 321h. Each mounting table 321a is provided at a position away from the rotation center of the turntable 321. Each mounting table 321a has a disk shape slightly larger than the substrate W. Each mounting table 321a is formed of, for example, quartz. Each mounting table 321a may be formed of a material with high thermal conductivity such as Al2O3, AlN, or SiC. The substrate W is placed on each mounting table 321a. Each mounting table 321a is configured to be rotatable together with the turntable 321. Each mounting table 321a is connected to a rotation motor 321c via a rotation shaft 321b and configured to be rotatable relative to the turntable 321. The detailed structures of the rotary table 321 and the mounting table 321a will be described later.

[0029] The rotation shaft 321b connects the lower surface of the mounting table 321a to the rotation motor 321c. The rotation shaft 321b transmits the power of the rotation motor 321c to the mounting table 321a. The rotation shaft 321b is configured to be rotatable around the center of the mounting table 321a. A plurality of the rotation shafts 321b are provided along the rotation direction of the turntable 321. The number of the rotation shafts 321b is the same as the number of the mounting tables 321a. The rotation shafts 321b penetrate the ceiling portion 322b of the storage box 322. A seal portion 326c is provided in the through hole of the ceiling portion 322b to maintain the airtight state inside the storage box 322. The seal portion 326c includes, for example, a magnetic fluid seal.

[0030] The rotation motor 321c is housed in the housing box 322. The rotation motor 321c rotates the mounting table 321a relative to the turntable 321 via the rotation shaft 321b. This causes the substrate W to rotate. The rotation motor 321c is, for example, a servo motor. The rotation motor 321c is provided with a first encoder 321e that detects the rotation angle of the rotation shaft 321b. The rotation angle of the rotation shaft 321b detected by the first encoder 321e is transmitted to the control unit 390 and is used by the control unit 390 to identify the position of the substrate W placed on the mounting table 321a.

[0031] The connection portion 321d connects the lower surface of the turntable 321 and the upper surface of the storage box 322. For example, a plurality of the connection portions 321d are provided along the circumferential direction of the turntable 321. The plurality of connection portions 321d and the plurality of rotation shafts 321b may be provided on the same circumference. The connection portions 321d and the rotation shafts 321b may be provided alternately along the circumferential direction of the turntable 321.

[0032] The storage box 322 is provided below the turntable 321 in the vacuum vessel 311. The storage box 322 is connected to the turntable 321 via a plurality of connection parts 321d, and configured to be rotatable integrally with the turntable 321. The storage box 322 may be configured to be movable up and down within the vacuum vessel 311 by a lifting mechanism (not shown). The storage box 322 has a main body part 322a and a ceiling part 322b.

[0033] The main body portion 322a is formed in a concave shape in cross section, and is formed in a ring shape along the rotation direction of the turntable 321.

[0034] The ceiling portion 322b is provided on the upper portion of the main body portion 322a. The ceiling portion 322b closes an opening of the main body portion 322a that is formed in a concave shape in cross section, thereby forming, together with the main body portion 322a, a storage portion 322c that is isolated from the inside of the vacuum vessel 311.

[0035] The accommodation portion 322c is formed in a rectangular shape in cross section, and is formed in a ring shape along the rotation direction of the turntable 321. The accommodation portion 322c accommodates the rotation motor 321c. A communication passage 322d is formed in the main body portion 322a. The communication passage 322d connects the accommodation portion 322c to the outside of the substrate processing apparatus 300. Thus, air is introduced from the outside of the substrate processing apparatus 300 into the accommodation portion 322c through the communication passage 322d. As a result, the inside of the accommodation portion 322c is cooled, and the inside of the accommodation portion 322c is maintained at atmospheric pressure.

[0036] The revolution shaft 323 is fixed to the lower part of the storage box 322. The revolution shaft 323 is provided penetrating the bottom plate 311d. The revolution shaft 323 transmits the power of the revolution motor 324 to the turntable 321 and the storage box 322, and rotates the turntable 321 and the storage box 322 together. A seal portion 311f is provided in the through hole of the bottom plate 311d to maintain an airtight state inside the vacuum container 311. The seal portion 311f includes, for example, a magnetic fluid seal.

[0037] A through hole 323a is provided inside the revolution shaft 323. The through hole 323a is connected to the communication passage 322d and functions as a fluid flow path for introducing air into the housing box 322. The through hole 323a also functions as a wiring duct for introducing power lines and signal lines for driving the rotation motor 321c. The through holes 323a are provided in the same number as the rotation motors 321c, for example.

[0038] The revolution motor 324 rotates the turntable 321 relative to the vacuum vessel 311 via the revolution shaft 323. This causes the substrate W to revolve. The revolution motor 324 is, for example, a servo motor. The revolution motor 324 is provided with a second encoder 325 that detects the rotation angle of the revolution shaft 323. The rotation angle of the revolution shaft 323 detected by the second encoder 325 is transmitted to the control unit 390 and used by the control unit 390 to identify the position of the substrate W placed on the placement table 321a.

[0039] The height measuring device 330 measures the height of the substrate W placed on the mounting table 321a in a non-contact manner. The height measuring device 330 is provided above the window 311w of the top plate 311b as shown in FIG. 1. As shown in FIG. 5, the height measuring device 330 is provided on the circumference of a first circle passing through the mounting table 321a with the center being the central axis CA of the turntable 321 as a plane view from a direction perpendicular to the upper surface of the turntable 321. In this embodiment, the first circle is a circle C1 passing through the center of the mounting table 321a. In this case, it is easy to obtain the distribution of warpage in the entire in-plane of the substrate W. The first circle may be a circle C2 passing through a position closer to the central axis CA than the center of the mounting table 321a. The first circle may be a circle C3 passing through a position farther from the central axis CA than the center of the mounting table 321a.

[0040] The height measuring device 330 is, for example, a laser displacement meter. The height measuring device 330 measures the distance from the height measuring device 330 to the substrate W by irradiating a laser onto the upper surface of the substrate W placed on the placement table 321a and receiving the laser reflected by the upper surface of the substrate W. Therefore, when the turntable 321 is rotated and the substrate W moves along the rotation direction, the distance from the height measuring device 330 to the upper surface of the substrate W changes according to the unevenness of the upper surface of the substrate W, and therefore the change in the unevenness of the upper surface of the substrate W can be measured.

[0041] The control unit 390 controls each unit of the substrate processing apparatus 300. The control unit 390 may be, for example, a computer. A computer program for controlling the operation of each unit of the substrate processing apparatus 300 is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0042] The control unit 390 performs a step S1 of measuring the height of the substrate W using the height measuring device 330 while controlling the rotation motor 321c and the revolution motor 324 to rotate the turntable 321 in a number of positional relationships in which the relative angles between the turntable 321 and the mounting table 321a are different.

[0043] Step S1 includes, for example, measuring the height of the substrate W by the height measuring device 330 while the mounting table 321a is rotated relative to the turntable 321. In order to improve the in-plane uniformity, processes such as film formation and etching for the substrate W mounted on each mounting table 321a are often performed while the mounting table 321a is rotated relative to the turntable 321. For this reason, when the height of the substrate W is measured by the height measuring device 330 while the mounting table 321a is rotated relative to the turntable 321, the height of the substrate W can be measured during the execution of the process for the substrate W. As a result, the heights of all the substrates W can be measured without reducing productivity. Step S1 may include measuring the height of the substrate W by the height measuring device 330 while the mounting table 321a is stopped relative to the turntable 321.

[0044] Step S1 may include rotating the turntable 321 once each time the mounting table 321a is rotated by a first angle relative to the turntable 321. The first angle may be a value that is divisible by 180° by the first angle. In this case, measurement points for measuring the height of the substrate W are positioned approximately evenly in the circumferential direction of the substrate W. Step S1 may include rotating the turntable 321 a number of times equal to or more than the quotient of 180° divided by the first angle. In this case, the measurement points are positioned all over the circumferential direction of the substrate W. The first angle is preferably 45° or less, and more preferably 22.5° or less. In this case, the number of measurement points in the circumferential direction of the substrate W increases, so that a warpage map with high accuracy in the circumferential direction of the substrate W can be generated in step S2 described later.

[0045] The control unit 390 performs step S2 of generating a warpage map representing the distribution of the height of the substrate W in the plane of the substrate W based on the height of the substrate W measured by the height measuring device 330. For example, the control unit 390 specifies the position of the substrate W placed on each mounting table 321a based on the rotation angle of the rotation axis 321b detected by the first encoder 321e and the rotation angle of the revolution axis 323 detected by the second encoder 325. The control unit 390 associates the specified position of the substrate W with the height of the substrate W measured by the height measuring device 330 and stores the correspondence in a storage medium. The correspondence information in which the position of the substrate W and the height of the substrate W are associated with each other is, for example, a data table. The control unit 390 generates a warpage map based on the correspondence information stored in the storage medium.

[0046] The control unit 390 performs step S1 during the process of the substrate W placed on each mounting table 321a, for example. In this case, a warpage map during the process can be generated. Therefore, the warpage of the substrate W during the process can be confirmed. In addition, the warpage of all the substrates W can be confirmed without reducing productivity. The control unit 390 may perform step S1 after the substrate W is placed on each mounting table 321a and before the process is performed on each substrate W. In this case, a warpage map of the substrate before the process can be generated. Therefore, the warpage of the substrate W before the process can be confirmed. The control unit 390 may perform step S1 after the process is performed on the substrate W placed on each mounting table 321a and before the substrate W is unloaded from each mounting table 321a. In this case, a warpage map after the process can be generated. Therefore, the warpage of the substrate W after the process can be confirmed. The control unit 390 may perform step S1 both before and after the process. In this case, by comparing the warpage map before the process with the warpage map after the process, the warpage of the substrate W caused by the process on the substrate W can be confirmed.

[0047] (Substrate processing method) 6 to 9, a substrate processing method using the above-mentioned substrate processing apparatus 300 will be described as an example of the substrate processing method according to the embodiment. The substrate processing method according to the embodiment is performed under the control of a control unit 390. The substrate processing method according to the embodiment includes a substrate map generating method for generating a substrate map representing a distribution of characteristics of the substrate W within the surface of the substrate W. In the following, a case of generating a warpage map will be described as an example of the substrate map.

[0048] Fig. 6 is a diagram showing positions on the substrate W measured when the turntable 321 is rotated once. Fig. 7 is a diagram showing positions on the substrate W measured when the turntable 321 is rotated twice. Fig. 8 is a diagram showing positions on the substrate W measured when the turntable 321 is rotated three times. Fig. 9 is a diagram showing positions on the substrate W measured when the turntable 321 is rotated eight times.

[0049] First, a gate valve (not shown) is opened, and the transfer arm 314a transfers the substrate W to the mounting tables 321a of the turntable 321 through the transfer port 314. The transfer of the substrate W is performed in a state where the mounting tables 321a are stopped at the same angular position as the transfer port 314. The transfer of the substrate W is performed by intermittently rotating the turntable 321, and the substrates W are placed on each of the five mounting tables 321a of the turntable 321.

[0050] Next, the gate valve is closed, and the inside of the vacuum vessel 311 is depressurized by an exhaust device (not shown). Thereafter, the inside of the vacuum vessel 311 is adjusted to a processing pressure by controlling the pressure control valve while supplying a separation gas at a predetermined flow rate from the separation gas nozzles 312c and 312d. Next, the heater 315c heats the substrates W placed on the mounting tables 321a.

[0051] Next, the control unit 390 may perform step S1 before the process is performed on the substrate W placed on each mounting table 321a. In this case, a warpage map before the process can be generated. Therefore, the warpage of the substrate W before the process can be confirmed. Specifically, the height measuring device 330 measures the height of the substrate W placed on the mounting table 321a as follows.

[0052] First, the angle of the mounting table 321a relative to the turntable 321 is set to 0°, and the turntable 321 is rotated once while the angle of the mounting table 321a relative to the turntable 321 is maintained at 0°. The height measuring device 330 measures the height of the substrate W mounted on each mounting table 321a while the turntable 321 rotates once. As a result, as shown in FIG. 6, the height measuring device 330 can measure the height of the substrate W at multiple points (15 points in this embodiment) on the arc of a circle C1 that passes through the center of the mounting table 321a and has the central axis CA of the turntable 321 as its center. Although FIG. 6 shows 15 points on the arc of the circle C1, the number of measurement points measured by the height measuring device 330 is not limited to this. In FIG. 6, the position (0°, -150) means a position where the first angle is 0° and the position is -150 mm. The same applies to other positions.

[0053] After the turntable 321 is rotated once, the mounting table 321a is rotated by 22.5° relative to the turntable 321. Next, the turntable 321 is rotated once while the angle of the mounting table 321a relative to the turntable 321 is maintained at 22.5°. The height measuring device 330 measures the height of the substrate W mounted on each mounting table 321a while the turntable 321 is rotating once. As a result, as shown by the solid line in FIG. 7, the height measuring device 330 can measure the height of the substrate W at multiple points (15 points in this embodiment) on the arc of a circle C1 that passes through the center of the mounting table 321a and has the central axis CA of the turntable 321 as its center. Note that, for convenience of explanation, three points on the arc of the circle C1 are shown in FIG. 7. For convenience of explanation, the arc of the circle C1 is shown by a straight line in FIG. 7.

[0054] After the turntable 321 is rotated once, the mounting table 321a is rotated by another 22.5° relative to the turntable 321. In other words, the angle of the mounting table 321a relative to the turntable 321 is set to 45°. Next, the turntable 321 is rotated once while the angle of the mounting table 321a relative to the turntable 321 is maintained at 45°. The height measuring device 330 measures the height of the substrate W mounted on each mounting table 321a while the turntable 321 rotates once. As a result, the height measuring device 330 can measure the height of the substrate W at multiple points (15 points in this embodiment) on the arc of the circle C1 centered on the central axis CA of the turntable 321 and passing through the center of the mounting table 321a, as shown by the solid line in FIG. 8. Note that, for convenience of explanation, three points on the arc of the circle C1 are shown in FIG. 8. For convenience of explanation, the arc of the circle C1 is shown by a straight line in FIG. 8.

[0055] In this way, each time the turntable 321 rotates once, the mounting table 321a is rotated by 22.5° relative to the turntable 321, and the turntable 321 is rotated until the angle of the mounting table 321a relative to the turntable 321 reaches 157.5°. That is, the turntable 321 is rotated a total of eight times. The height measuring device 330 measures the height of the substrate W mounted on each mounting table 321a while the turntable 321 is rotating. In this way, the height measuring device 330 can measure the height of the substrate W at multiple positions on multiple (16 in this embodiment) curves extending radially from the center of the substrate W, as shown by the dashed dotted lines in FIG. 9. That is, the height of the substrate W in the plane of the substrate W can be measured by one height measuring device 330 without using multiple height measuring devices 330.

[0056] Next, the control unit 390 performs a step S2 of generating a warpage map representing a distribution of the height of the substrate W within the surface of the substrate W based on the height of the substrate W measured by the height measuring device 330. Specifically, the control unit 390 generates the warpage map as follows.

[0057] First, the control unit 390 specifies the position of the substrate W placed on each mounting table 321a based on the rotation angle of the rotation axis 321b detected by the first encoder 321e and the rotation angle of the revolution axis 323 detected by the second encoder 325. The control unit 390 associates the specified position of the substrate W with the height of the substrate W measured by the height measuring device 330, and stores the correspondence information in a storage medium. The correspondence information in which the position of the substrate W and the height of the substrate W are associated with each other is, for example, a data table. FIG. 10 is a diagram showing an example of the data table. As shown in FIG. 10, the data table associates 15 positions at each angle of the mounting table 321a with the rotation table 321 with the height of the substrate W. The angles of the mounting table 321a with respect to the rotation table 321 are 0°, 22.5°, 45°, 67.5°, 90°, 112.5°, 135°, and 157.5°. The 15 positions at each angle are -150mm, -125mm, -100mm, -75mm, -50mm, -25mm, 0mm, 25mm, 50mm, 75mm, 100mm, 125mm, and 150mm.

[0058] Next, the control unit 390 generates a warpage map representing the distribution of the height of the substrate W within the surface of the substrate W, based on the corresponding information stored in the storage medium.

[0059] Next, a process is performed on the substrate W placed on each placement table 321a. First, the turntable 321 is rotated continuously. At this time, the placement table 321a may be rotated relative to the turntable 321. In this case, the in-plane uniformity of the process can be improved. Next, a source gas is supplied from the source gas nozzle 312a, and a reaction gas is supplied from the reaction gas nozzle 312b. When the substrate W passes through the source gas adsorption region P1, the source gas supplied from the source gas nozzle 312a is adsorbed on the upper surface of the substrate W. The substrate W with the source gas adsorbed thereon passes through the separation region D having the separation gas nozzle 312d by the rotation of the turntable 321, is purged, and then enters the reaction gas supply region P2. In the reaction gas supply region P2, the source gas adsorbed on the upper surface of the substrate W reacts with the reaction gas supplied from the reaction gas nozzle 312b, and the reaction product is deposited on the upper surface of the substrate W.

[0060] The substrate W that has passed through the reaction gas supply region P2 passes through a separation region D having a separation gas nozzle 312c and is purged, and then enters the source gas adsorption region P1 again. Then, the source gas supplied from the source gas nozzle 312a is adsorbed onto the upper surface of the substrate W.

[0061] As described above, while the source gas is supplied from the source gas nozzle 312a and the reactive gas is supplied from the reactive gas nozzle 312b, the turntable 321 is continuously rotated. As a result, a film of reactive deposits is formed on the upper surface of the substrate W.

[0062] The control unit 390 may perform step S1 during the process of the substrate W placed on each mounting table 321a. In step S1 performed during the process, the height measuring device 330 measures the in-plane height of the substrate W while rotating the turntable 321 in a state where the mounting table 321a is rotated relative to the turntable 321. In this case, a warpage map during the process can be generated. Therefore, the warpage of the substrate W during the process can be confirmed. Furthermore, the warpage of all the substrates W can be confirmed without reducing productivity.

[0063] After the process is performed on the substrate W placed on each mounting table 321a, the control unit 390 may perform step S1. In this case, a warpage map after the process can be generated. Therefore, the warpage of the substrate W after the process can be confirmed. In addition, by comparing the warpage map before the process and the warpage map after the process, the warpage of the substrate W caused by the process can be confirmed.

[0064] Next, the substrates W placed on the mounting tables 321a are removed from the vacuum container 311 in the reverse order to the procedure for carrying the substrates W into the vacuum container 311.

[0065] The embodiments disclosed herein should be considered to be illustrative and not restrictive in all respects. The above-described embodiments may be omitted, substituted, or modified in various forms without departing from the scope and spirit of the appended claims.

[0066] In the above embodiment, the controller 390 generates a warpage map based on the height of the substrate W measured by the height measuring device 330, but the present disclosure is not limited thereto. For example, by using a film thickness measuring device instead of the height measuring device 330, the controller 390 can generate a film thickness map representing the distribution of the film thickness in the plane of the substrate W based on the film thickness of the substrate W measured by the film thickness measuring device. The type of the film thickness measuring device is not particularly limited, but may be, for example, a spectroscopic interferometer. For example, by using a temperature measuring device instead of the height measuring device 330, the controller 390 can generate a temperature map representing the distribution of the temperature of the substrate W measured by the temperature measuring device. The type of the temperature measuring device is not particularly limited, but may be, for example, a reflection thermometer. In this way, according to the embodiment, a substrate map representing the characteristics of the substrate W in the plane of the substrate W can be generated. [Explanation of symbols]

[0067] 300 Substrate processing equipment 311 Vacuum container 321 Rotating Table 321a Mounting table 330 Height Measuring Instrument

Claims

1. A vacuum vessel; a rotary table provided within the vacuum vessel; a plurality of mounting tables provided along a circumferential direction of the rotary table, each of which is adapted to mount a substrate thereon; a measuring device for measuring characteristics of the substrate placed on the placement table; Equipped with The mounting table is configured to be rotatable relative to the rotary table, the measuring device is provided on a circumference of a circle passing through the mounting table and having a center on a central axis of the turntable when viewed in a plan view from a direction perpendicular to an upper surface of the turntable. Substrate processing equipment.

2. The circle passes through the center of the mounting table. The substrate processing apparatus according to claim 1 .

3. A control unit is further provided. The control unit is (a) measuring characteristics of the substrate by the measuring device while rotating the turntable at a plurality of positional relationships in which the relative angle between the turntable and the mounting table is different; (b) generating a substrate map representing a distribution of the substrate property within the plane of the substrate based on the measured substrate property; configured to: The substrate processing apparatus according to claim 1 .

4. the step (a) includes measuring characteristics of the substrate by the measuring device while rotating the mounting table relative to the turntable; The substrate processing apparatus according to claim 3 .

5. the step (a) includes measuring characteristics of the substrate by the measuring device while the mounting table is stopped relative to the turntable; The substrate processing apparatus according to claim 3 .

6. the step (a) includes rotating the rotary table once every time the mounting table is rotated by a first angle relative to the rotary table; The first angle is a value that is divisible by 180°. The substrate processing apparatus according to claim 5 .

7. rotating the rotary table once each time the stage is rotated by a first angle relative to the rotary table; The step (a) includes rotating the rotary table a number of times equal to or greater than a quotient of 180° divided by the first angle. The substrate processing apparatus according to claim 5 .

8. The measuring instrument is a height measuring instrument, a film thickness measuring instrument, or a temperature measuring instrument; The substrate processing apparatus according to claim 1 .

9. A vacuum vessel; a rotary table provided within the vacuum vessel; a plurality of mounting tables provided along a circumferential direction of the rotary table, each of which is adapted to mount a substrate thereon; a measuring device for measuring characteristics of the substrate placed on the placement table; 1. A method for generating a substrate map representing a distribution of a characteristic of the substrate within a plane of the substrate placed on the placement table in a substrate processing apparatus comprising: The mounting table is configured to be rotatable relative to the rotary table, the measuring device is provided on a circumference of a circle passing through the mounting table and having a center axis of the turntable as a center when viewed in a plan view from a direction perpendicular to an upper surface of the turntable, (a) measuring characteristics of the substrate by the measuring device while rotating the turntable at a plurality of positional relationships in which the relative angle between the turntable and the mounting table is different; (b) generating a substrate map representing a distribution of the substrate property within the plane of the substrate based on the measured substrate property; having How to generate a board map.

Images