Manufacturing method of heat dissipation device-integrated heat dissipation substrate for semiconductor

Abstract

To provide a heat dissipation device-integrated heat dissipation substrate for a semiconductor.SOLUTION: A manufacturing method of the present invention, includes: a base processing step of preparing first and second base original plates each in a form of metal plates that overlap each other and constitute a part of a metal base, and providing first and second bases in which a three-dimensional structure forming a coolant circulation space is formed on an inner surface of at least one of the first base plate and the second base plate; a base coupling step of coupling opposing inner surfaces of the first and second bases against each other to form heat dissipation device-integrated base including the coolant circulation space, an electrode metal original plate preparation step of processing an electrode metal original plate to form a groove pattern corresponding to a pattern space, and providing an electrode metal original plate capable of covering an area corresponding to at least one circuit unit, so as to not allow any open part to be generated by a residual part remained at the time of forming the pattern groove; and an electrode metal plate original plate bonding step of bonding, via insulating resin, the electrode metal plate to an upper surface of the heat dissipation device-integrated base formed in the base coupling step.SELECTED DRAWING: Figure 6

Description

[Technical field]

[0001] The present invention relates to a method for manufacturing a heat dissipation substrate for mounting a semiconductor element, which is integrated with a heat dissipation device, and more specifically, to a method for efficiently manufacturing a heat dissipation substrate that functions as a circuit board for mounting a semiconductor element, which includes a thick metal electrode plate suitable for mounting a high-power semiconductor element or a high-output LED, and has a heat dissipation device integrated on the back surface of the metal electrode plate. [Background technology]

[0002] Recently, in the power industry, R&D is being actively conducted on new renewable energy facilities such as solar and wind power generation, as well as on improving the efficiency of devices that run on electricity as a power source, such as electric vehicles and robots. The core component used in these is the power module, or power semiconductor module, which utilizes power devices. In the lighting field, R&D is also being conducted on technologies to improve the efficiency and lifespan of LED light sources that require high output, such as car headlights, street lights, and plant growth for smart farms.

[0003] These power devices handle high power, with currents ranging from tens to hundreds of amperes and voltages ranging from tens to thousands of volts, and so generate a lot of heat from the device modules. This heat is likely to cause device malfunctions and reliability problems. To prevent such defects or efficiency declines, the key is how to quickly dissipate the heat generated by the semiconductor elements. In the case of high-power LED light source modules, heat dissipation is also a crucial factor that directly affects the lifespan and efficiency of the device. Heat dissipation is also a very important factor in computing devices for artificial intelligence or cloud computing.

[0004] In general printed circuit boards, electrode patterns are formed on an electrode layer made of copper foil by etching or plating process, and if the thickness of the copper foil is thin, the electrical resistance is large and it is not suitable for the high power semiconductor device mentioned above, and if the thickness of the copper foil is thick, the etching or plating process reaches its limit. In order to solve the technical problem of securing an electrode pattern of sufficient thickness, the applicant has proposed a configuration and a manufacturing method in Korean Patent Registration Nos. 10-2055587, 10-2283906, and 10-2120785 that can improve the performance, durability, and productivity of a heat dissipation board for semiconductors and reduce the emission of pollutants by cutting all or part of the thickness of the electrode metal layer.

[0005] Meanwhile, in order to obtain sufficient heat dissipation effect for high power semiconductor devices, etc., in the printed circuit board, it is often required to separately attach a heat dissipation device such as a heat sink, a water jacket, a heat pipe, or a heat exchanger. The problem is that the thermal conduction resistance of the bonding surface for attaching these heat dissipation devices to the printed circuit board is high, and the circuit may be defective in the process of bonding the heat dissipation device to the printed circuit board. For example, when the back surface of the printed circuit board and the water jacket are bonded by brazing, the process temperature reaches about 600°C, which may damage the synthetic resin insulating layer constituting the printed circuit board and may cause the arrangement of the electrodes to be shifted. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent No. 10-2055587 [Patent Document 2] Korean Patent No. 10-2120785 [Patent Document 3] Korean Patent No. 10-2283906 Summary of the Invention [Problem to be solved by the invention]

[0007] The present invention aims to provide a heat dissipation board for semiconductors for mounting high power semiconductor devices, which is a heat dissipation board for semiconductors integrated with a heat dissipation device, such as a water jacket, a refrigerant circulation type heat exchanger, a heat pipe, etc., integrated on the back side of a printed circuit board, and a method for efficiently manufacturing the same. Another aim of the present invention is to provide a method for manufacturing a heat dissipation board for semiconductors integrated with a heat dissipation device, which is integrated with a heat dissipation device without damaging a circuit board having a synthetic resin insulating layer. [Means for solving the problem]

[0008] In order to solve the above problems, a method for manufacturing a heat dissipation substrate for semiconductors integrated with a heat dissipation device according to the present invention is for mounting a semiconductor element, and includes a plurality of electrodes separated from each other and electrically insulated by a pattern space, a metal base integrally provided with a coolant circulation space for absorbing and releasing heat transferred from the plurality of electrodes, and an insulating layer formed of an insulating resin and joining the plurality of electrodes onto the metal base, the method comprising the steps of: preparing a first base original plate and a second base original plate in the form of metal plates which are stacked on each other to form at least a part of the metal base; and providing a first base and a second base in which a three-dimensional structure forming the coolant circulation space is formed on at least one inner side surface of the first base original plate and the second base original plate. the base processing step, the base joining step of butting and joining the opposing inner surfaces of the first base and the second base to form a heat dissipation device-integrated base including the refrigerant flow space, the electrode metal original plate preparation step of processing an electrode metal original plate of a metal plate material that will form the multiple electrodes to form pattern grooves corresponding to the pattern space and providing an electrode metal original plate that can cover an area corresponding to at least one circuit unit by a residual portion left after forming the pattern groove so that no opening is formed, and the electrode metal original plate joining step of joining the electrode metal original plate to the upper surface of the heat dissipation device-integrated base formed by the base joining step via an insulating resin.

[0009] The base joining step may be configured to join the first base and the second base by a brazing process.

[0010] The electrode metal original plate joining step may comprise forming an insulating layer between a first surface of the electrode metal original plate on which the pattern groove is formed and an upper surface of the heat dissipation device integrated base, and joining the electrode metal original plate so that the pattern groove is filled with an insulator.

[0011] In the electrode metal plate bonding step, the insulating layer may be formed using a semi-cured insulating resin sheet.

[0012] After the electrode metal plate bonding step, an electrode forming step of removing the remaining portion from the upper surface of the electrode metal plate to separate the plurality of electrodes from each other may be included.

[0013] The base processing step and the base joining step may be configured to integrally form a heat dissipation device unit selected from a group including a water jacket, a heat exchanger, and a heat pipe, including the refrigerant flow space formed between two opposing inner surfaces of the first and second bases, by processing the first and second bases and joining the first and second bases.

[0014] The base processing step can process the first and second bases so that a plurality of the heat dissipation device units are arranged in a plane within one of the heat dissipation device-integrated bases.

[0015] The method may further include a cutting step of arranging a plurality of circuit units, each of which constitutes one circuit by the plurality of electrodes and the pattern space, on an upper portion of the heat dissipation device-integrated base corresponding to the plurality of heat dissipation device units to prepare an original plate for a semiconductor heat dissipation substrate, and cutting the original plate for a semiconductor heat dissipation substrate to provide a plurality of heat dissipation device-integrated heat dissipation substrate units for a semiconductor.

[0016] On the other hand, the base processing step may be configured to process the first and second bases so that one of the heat dissipation device units is configured within one heat dissipation device integrated base, and the electrode metal original plate preparation step and the electrode metal original plate joining step may be configured to provide a plurality of electrode metal original plates, each having a pattern groove corresponding to one circuit unit, and join the plurality of electrode metal original plates to an upper surface of the one heat dissipation device integrated base.

[0017] A method for manufacturing a heat dissipation substrate for semiconductors with an integrated heat dissipation device according to one aspect of the present invention is for mounting semiconductor elements, and includes a plurality of electrodes separated from each other by pattern spaces and electrically insulated, a metal base integrally provided with a coolant circulation space for absorbing and releasing heat transferred from the plurality of electrodes, and an insulating layer formed of insulating resin and joining the plurality of electrodes onto the metal base, the method comprising the steps of: preparing a first base original plate and a second base original plate in the form of metal plates which are stacked on each other to form at least a part of the metal base; The method may include a base processing step of providing a first base and a second base, each having a three-dimensional structure forming the refrigerant flow space formed on at least one inner surface of the first base and the second base, a base joining step of butting and joining the opposing inner surfaces of the first base and the second base to form a heat dissipation device-integrated base including the refrigerant flow space, an electrode metal plate joining step of joining the flat electrode metal plate to an upper surface of the heat dissipation device-integrated base via an insulating resin, and an electrode formation step of deleting a pattern corresponding to the pattern space in the electrode metal plate to form the multiple electrodes.

[0018] The base processing step can form a plurality of cooling fins protruding from the bottom surface of the first base, and the base joining step can join the end portions of the plurality of cooling fins to the bottom surface of a three-dimensional structure forming the refrigerant flow space of the second base so that they are fixedly supported in at least a lateral direction parallel to the plane to which the base belongs.

[0019] The base processing step can form a plurality of fin grooves in the bottom surface of the second base to accommodate end portions of the plurality of cooling fins, and the base joining step can join the first and second bases with the end portions of the plurality of cooling fins inserted into the plurality of fin grooves.

[0020] The base joining step may include butting inner surfaces of the first and second bases against each other and brazing them together, and brazing ends of the cooling fins to the bottom surface.

[0021] A heat dissipation device for semiconductors with an integrated heat dissipation device according to one embodiment of the present invention includes a first base having a flat upper surface and an electrode pattern forming a predetermined circuit joined to the upper surface via an insulating layer, a second base arranged below the first base and joined to face a bottom surface of the first base, forming a three-dimensional structure that forms a refrigerant flow space between the bottom surface of the first base, and a plurality of cooling fins protruding from the bottom surface of the first base toward the refrigerant flow space, and configured so that end portions of the plurality of cooling fins are fixedly supported by the bottom surface of the three-dimensional structure inside the second base.

[0022] The second base further includes a plurality of fin grooves on the bottom surface that accommodate end portions of the plurality of cooling fins, and the first base and the second base are connectable to each other with the end portions of the plurality of cooling fins inserted into the plurality of fin grooves. Effect of the Invention

[0023] According to the present invention, there is provided a method for efficiently manufacturing a heat dissipation board for semiconductors integrated with a heat dissipation device, which is a heat dissipation board for semiconductors for mounting high power semiconductor devices, and which has a heat dissipation device such as a water jacket, a refrigerant circulation type heat exchanger, a heat pipe, etc. integrated on the rear side of a printed circuit board. According to the present invention, a heat dissipation board for semiconductors integrated with a heat dissipation device can be manufactured without damaging a circuit board having a synthetic resin insulating layer. In addition, the manufacturing method according to the present invention can be applied to mass production as well as small-lot production of a wide variety of products. [Brief description of the drawings]

[0024] [Figure 1] 1 illustrates a preparation state of first and second base master plates during a manufacturing process according to an embodiment of the present invention. [Diagram 2] 4A to 4C illustrate a processing state of a first base during a manufacturing process according to an embodiment of the present invention. [Diagram 3] 4A to 4C illustrate a processing state of a second base during a manufacturing process according to an embodiment of the present invention. [Figure 4] 4 shows a heat dissipation device-integrated base in which the first base of FIG. 2 and the second base of FIG. 3 are joined together. [Diagram 5] 4A to 4C show a state in which a first surface of an electrode metal plate is processed during a manufacturing process according to an embodiment of the present invention. [Figure 6] 6 shows a state in which the electrode metal plate of FIG. 5 is joined onto the heat dissipation device integrated base of FIG. [Figure 7] 2 shows a state before cutting of an original plate of a heat dissipation substrate for a semiconductor according to an embodiment of the present invention. [Figure 8] 4A-4D illustrate processing of the first and second bases during a manufacturing process according to one embodiment of the present invention. [Figure 9] 9 shows a state before cutting of an original plate of a heat dissipation board for semiconductors to which the first and second bases of FIG. 8 are applied. [Figure 10] 1A to 1C are diagrams illustrating a process for manufacturing a heat dissipation device-integrated heat dissipation board for semiconductors according to an embodiment of the present invention; [Figure 11] 4 illustrates an assembly state of the heat dissipation device-integrated base during a manufacturing process of a heat dissipation board for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention. [Figure 12] 1 illustrates a step of preparing an electrode metal plate in a process for manufacturing a heat dissipation substrate for a semiconductor integrated with a heat dissipation device according to an embodiment of the present invention. [Figure 13] 1 illustrates a step of bonding an electrode metal plate and a heat dissipation device-integrated base in a manufacturing process of a heat dissipation board for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention. [Figure 14]1 shows a cross section of a heat dissipation substrate for a semiconductor integrated with a heat dissipation device according to an embodiment of the present invention. [Figure 15] 15 is an exploded perspective view of a base in the heat dissipation board for a semiconductor integrated with a heat dissipation device according to the embodiment of FIG. 14. FIG. [Figure 16] 15 is a perspective view of the heat dissipation board for a semiconductor integrated with a heat dissipation device according to the embodiment of FIG. 14. FIG. [Figure 17] 13 shows a cross section of a heat dissipation board for a semiconductor integrated with a heat dissipation device according to another embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0025] Hereinafter, various embodiments of the present invention will be described with reference to the drawings. The technical concept of the present invention will be more clearly understood through the embodiments. Furthermore, the present invention is not limited to the embodiments described below, and may be modified into various forms within the scope of the technical concept of the present invention. In this specification, directions such as up, down, top, bottom, etc. are based on the directions shown in the referenced drawings, unless otherwise specified.

[0026] FIG. 1 illustrates the preparation of first and second base masters during a manufacturing process according to an embodiment of the present invention.

[0027] A pair of base original plates that will constitute the heat dissipation device, i.e., a first base 12 and a second base 13, are prepared. The first and second bases 12 and 13 may be made of a material such as aluminum or copper that has excellent thermal conductivity and workability as a metal plate, and are not limited to those exemplified here. The first and second bases 12 and 13 do not need to have the same thickness, but it is preferable that they have the same specifications in plan view.

[0028] The first and second bases 12 and 13 have alignment marks that are matched to each other at the same position when viewed in a plane. The shape of the alignment marks is not limited, and according to this embodiment, they may be a plurality of pinholes 129 and 139 formed to penetrate the pair of bases 12 and 13. The pinholes 129 and 139 are fitted to alignment pins (not shown) provided separately or in a processing facility, so that the planar positions of the first and second bases 12 and 13 are aligned with each other or with the processing facility. Alternatively, various examples such as pins and holes, protrusions and grooves, or vision identification marks that correspond to each other three-dimensionally may be used as the alignment marks.

[0029] 2 shows a state in which the first base plate is processed during the manufacturing process according to an embodiment of the present invention. Hereinafter, the first base plate and the second base plate in the processed state are referred to as the first base 12 and the second base 13, respectively.

[0030] 1A is a plan view of the first surface 121 of the first base 12, and FIG. 1B is a cross section taken along line IIB-IIB' in FIG. 1A. The first surface 121 corresponds to the inner surface of the two flat surfaces of the first base 12 that faces the second base 13. A plurality of first unit parts 125 that constitute a portion of a plurality of heat dissipation device units are formed on the first surface 121 of the first base 12. According to this embodiment, the first unit parts 125 can constitute a portion of a water jacket as an example of a heat dissipation device unit that includes a refrigerant flow path.

[0031] The first unit part 125 is formed with a unit groove 122 constituting a part of the cooling water receiving space of the water jacket, and a plurality of cooling fins 123 arranged in each unit groove 122. The structure of the first unit part 125 including the unit groove 122 and the plurality of cooling fins 123 can be processed, for example, by a method of leaving the portion of the plurality of cooling fins 123 in the process of cutting the unit groove 122 using a CNC machining machine. However, the processing method is not limited to this embodiment. In designing and processing the first base 12, the positions of the plurality of first unit parts 125 are determined based on the positions of the above-mentioned plurality of pinholes 129, i.e., the alignment marks.

[0032] Meanwhile, it is preferable that a second surface 126 of the first base 12 opposite to the first surface 121 maintains a flat surface, since an insulating layer and an electrode pattern are to be disposed on the second surface 126.

[0033] FIG. 3 illustrates a processing state of the second original base plate during the manufacturing process according to an embodiment of the present invention.

[0034] 2. (a) is a plan view of a first surface 131 of the second base 13, and (b) is a cross section taken along line IIIB-IIIB' in (a). The first surface 131 corresponds to an inner surface of the two flat surfaces of the second base 13 that faces the first base 12. A plurality of second unit parts 135 that constitute a part of a plurality of heat dissipation device units are formed on the first surface 131 of the second base 13. According to this embodiment, the second unit parts 135, together with the first unit part 125 of FIG. 2 described above, can constitute a water jacket unit as an example of a heat dissipation device unit including a refrigerant flow path.

[0035] The second base 13 may have a plurality of unit grooves 132 formed in a groove shape recessed from the first surface 131, each of which corresponds to the plurality of unit grooves 122 in FIG. 2. A cooling water inlet / outlet 133 through which cooling water flows in and out may be formed in each of the plurality of unit grooves 132. The cooling water inlet / outlet 133 may be formed in a through-hole shape passing through a bottom surface of the unit groove 131 formed by removing a portion of the second base 13 on the first surface 131 side. In designing and processing the second base 13, the positions of the plurality of second unit parts 135 are determined based on the positions of a plurality of pinholes 139, i.e., alignment marks.

[0036] Meanwhile, although not shown, cooling fins (not shown) having the same or similar shape as the cooling fins 123 formed in the unit grooves 122 of the first base 12 may be further formed inside the unit grooves 132 of the second base 13. Such a cooling fin forming operation may also be performed simultaneously with the formation of the unit grooves 132.

[0037] FIG. 4 shows a heat dissipation device integrated base in which the first base of FIG. 2 and the second base of FIG. 3 are joined together.

[0038] The first surface 121 of the first base 12 and the first surface 131 of the second base 13 are disposed opposite to each other and bonded to form the heat dissipation device integrated base 10. At this time, the pinholes 129, 139 are aligned with each other to perform bonding, so that the first unit parts 125 of the first base 12 and the second unit parts 135 of the second base 13 are mated to each other to form a plurality of water jacket units. A bonding portion 141 between the first surface 121 of the first base 12 and the first surface 131 of the second base 13 can be formed by brazing, for example.

[0039] Brazing is a method of joining two metal base materials by melting only a metal filler metal without melting the base metal at a temperature of 450°C or more, and the molten filler metal penetrates between the surfaces of two metal base materials by capillary action, etc., and then solidifies to join the two metal base materials. According to this embodiment, a filler metal is placed between the first surface 121 of the first base 12 and the first surface 131 of the second base 13, and the two base plates are heated and cooled to form a joint 141 where the filler metal melts and resolidifies. The joint 141 formed by brazing in this manner has a lower thermal conductivity resistance and excellent airtightness compared to other joints / bonding parts.

[0040] However, the above-mentioned joining method is not limited to brazing, and any joining method that can ensure the airtightness of the water jacket unit, such as adhesive bonding or bolt fastening including sealing, can be applied.

[0041] In addition, a third member (not shown) may be added between the first base 12 and the second base 13, and the first and second bases 12, 13 and the third member may be joined to each other, so that the refrigerant flow space formed in the first and second bases 12, 13 and the third member together complete the space of the multiple heat dissipation device units.

[0042] FIG. 5 shows a processing state of the first surface of the electrode metal plate during the manufacturing process according to one embodiment of the present invention.

[0043] The electrode metal plate 30 is a metal plate on which one or more electrode pattern units for a circuit configuration of a high power semiconductor device module can be arranged, and may further include a pinhole 309 as an alignment mark as shown in the figure. The electrode metal plate 30 may be made of a metal material for electrodes, for example, copper. Pattern grooves 320 corresponding to the plurality of electrode pattern units are formed on a first surface 301 of the electrode metal plate 30. The pattern grooves 320 are formed by processing a portion corresponding to a pattern space between electrodes and a portion corresponding to a peripheral portion of an electrode group consisting of a plurality of electrodes constituting one circuit to a predetermined depth shallower than the thickness of the electrode metal plate 30, and a residual portion 321 of a predetermined thickness is left at the bottom of the pattern groove 320. The processing for forming the pattern grooves 320 may be performed, for example, using a CNC cutting machine M, or may be performed by laser processing, press processing, or the like.

[0044] The design and processing of the multiple electrode pattern units can also be based on the position of the alignment mark, so that one electrode pattern unit is positioned corresponding to each of the multiple water jacket units shown in Figure 4 described above.

[0045] As described above, the production of the heat dissipation device-integrated base 10 described with reference to Figs. 1 to 4 and the processing of the electrode metal original plate 30 shown in Fig. 5 can be carried out in parallel regardless of the time sequence.

[0046] FIG. 6 shows a state in which the electrode metal plate of FIG. 5 is joined onto the heat dissipation device integrated base of FIG.

[0047] Next, the electrode metal plate 30 processed as shown in Fig. 5 is bonded to the upper surface 126 of the heat dissipation device integrated base 10, which has been bonded as shown in Fig. 4, using an insulating resin. At this time, the first surface 301 of the electrode metal plate 30, on which the pattern groove 320 is formed, is bonded to the upper surface 126 of the heat dissipation device integrated base 10 via the insulating resin. During bonding, the positions of the two members can be aligned by matching the pinhole 309 of the electrode metal plate 30 with the pinholes 129, 139 of the heat dissipation device integrated base 10. When the insulating resin is cured, an insulating layer 21 located between the upper surface 126 of the heat dissipation device integrated base 10 and the electrode region in the electrode metal plate 30 and an insulator filling portion 22 located in the pattern groove 320 are formed.

[0048] Here, the bonding of the electrode metal original plate 30 and the heat dissipation device integrated base 10 using an insulating resin may include a vacuum hot pressing process, but the process temperature of the vacuum hot pressing process is lower than the process temperature of the brazing bonding process and the heat-resistant temperature of the bonding portion 141. Therefore, as in this embodiment, it is advantageous to proceed with the bonding process of the heat dissipation device integrated base 10 first and then bond the electrode metal original plate 30 thereon. If the two bonding processes are performed in the opposite order, the insulator may melt or be damaged by heat during brazing bonding, resulting in problems such as deformation of the electrode pattern or insulation breakdown.

[0049] Thereafter, as indicated by a plurality of dotted arrows in the figure, the second surface 302 of the electrode metal plate 30 is entirely removed, or at least the remaining portion 321 is selectively removed. In order to remove the remaining portion 321, an etching process or a cutting process may be used. During the etching, an etch mask may be used to selectively remove only the remaining portion 321.

[0050] Meanwhile, unlike the above-mentioned embodiment, after the heat dissipation device-integrated base 10 is completed, a flat electrode metal original plate may be bonded to the upper surface of the base via an insulating resin, and then the electrode metal original plate may be processed to process a plurality of electrode pattern units. As in the above-mentioned embodiment, whether a method is adopted in which a plurality of pattern groove units corresponding to a plurality of electrode pattern units are first processed in the electrode metal original plate, bonded, and then the remaining portion is removed, or a method is adopted in which a flat electrode metal original plate is bonded and then the plurality of electrode pattern units are processed, the original plate for a semiconductor heat dissipation substrate can be completed in a form in which the plurality of electrode pattern units are arranged in one-to-one correspondence with each other on the respective heat dissipation device units formed in the heat dissipation device-integrated base.

[0051] FIG. 7 shows a state before cutting of the original plate of the heat dissipation substrate for semiconductors according to one embodiment of the present invention.

[0052] This figure shows a state in which a plurality of electrodes 31, pattern spaces 32, and peripheral portions 33 are formed for each electrode pattern unit 36 ​​after the process of removing the remaining portion 321 in Fig. 6 described above is completed. The electrode pattern units 36 are arranged corresponding to the upper portions of a plurality of water jacket units provided in the heat dissipation device-integrated base 10. When the base 10 is cut into units in this state along cutting lines C, a combination of an electrode pattern forming a circuit for a high power semiconductor device module and a water jacket integrally formed below the electrode pattern, i.e., a heat dissipation device (water jacket)-integrated heat dissipation substrate for semiconductors 101 is provided.

[0053] Meanwhile, in the above-mentioned embodiments of Figures 1 to 7, examples have been described in which multiple units of the same specification are simultaneously manufactured on one original plate, which is suitable for mass production. However, since the processing steps of Figures 2, 3 and 5 are all carried out using a design and processing method based on the same alignment mark, the manufacturing method of the present invention can also be used for small-scale production of various types of heat dissipation substrates for semiconductors with integrated heat dissipation devices that are not of the same specification.

[0054] FIG. 8 illustrates processing of the first and second bases during a manufacturing process according to one embodiment of the present invention.

[0055] 2 and 3, this figure relates to a method for manufacturing a heat dissipation substrate for semiconductors in which a heat exchanger having a refrigerant flow path is integrally formed as a heat dissipation device. (a) is a state in which the first base 12B is viewed from the first surface 121 side of the inner side surface, and (b) is a state in which the second base 13B is viewed from the first surface 131 side of the inner side surface. The first and second bases 12B and 13B can be provided with a plurality of pinholes 129 and 139 as alignment marks for alignment when they are joined to each other.

[0056] As shown in (a) and (b), a first unit part 127 and a second unit part 137 for constituting a plurality of heat dissipation device units are formed on the first surface 121 of the first base 12B and the first surface 131 of the second base 13B, respectively. A first flow path pattern groove 128 and a second flow path pattern groove 138 are machined in the first and second unit parts 127 and 137, respectively. The first and second flow path pattern grooves 128 and 138 can be machined by a CNC cutting machine, but may also be machined by other methods such as press processing. The first and second flow path pattern grooves 128 and 138 are disposed opposite each other to form a refrigerant flow path, and may be formed, for example, in a rectangular cross section having a predetermined depth, and may be variously modified, such as by making the depths of the first and second flow path pattern grooves 128 and 138 different from each other or forming them in a semicircular cross section, as necessary.

[0057] In addition, the heat dissipation device unit that can be integrally formed within the heat dissipation device integrated base according to the present invention may include various types of heat dissipation devices having a refrigerant flow path (including a flow space) formed between the first and second base substrates, such as a heat pipe, in addition to the water jacket or heat exchanger mentioned above.

[0058] FIG. 9 shows a state before cutting of the original plate of the heat dissipation board for semiconductors to which the first and second bases of FIG. 8 are applied.

[0059] Although not shown here, following the process of Fig. 8, the first base 12B having the plurality of first unit parts 127 formed thereon and the second base 13B having the plurality of second unit parts 137 formed thereon are bonded to each other such that their first surfaces 121, 131 face each other to form the heat dissipation device-integrated base 10B. Here, the method of bonding them is as described with reference to Fig. 4.

[0060] 5 and 6, the electrode metal plate 30 is processed and joined to the heat dissipation device-integrated base via an insulating resin, and then the remaining portion on the front side of the electrode metal plate 30 is removed to form a plurality of electrode pattern units 36 corresponding to the plurality of heat dissipation device units, respectively. Through this process, the electrode pattern units 36 and the heat exchanger units are combined and integrated, and by cutting this along cutting lines C, a plurality of heat dissipation substrates for semiconductors 102 integrated with a heat dissipation device can be manufactured.

[0061] FIG. 10 illustrates a process for manufacturing a heat dissipation device-integrated base in a process for manufacturing a heat dissipation board for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention.

[0062] The first base 12C, which provides a flat upper surface 126C on which a plurality of electrodes are arranged to be insulated from one another, can be formed by processing a metal plate having a predetermined thickness, i.e., a first base original plate, as in the above-described embodiment, and a plurality of cooling fins 123C protruding in a direction away from the upper surface 126C may be disposed on the opposite side of the upper surface 126C. The plurality of cooling fins 123C can be formed by cutting the bottom surface 121C of the first base original plate. However, the method of forming the plurality of cooling fins 123C is not limited to cutting only.

[0063] The second base 13C, which forms a refrigerant circulation space between two opposing inner surfaces together with the first base 12C, can be formed by machining a metal plate-shaped second base original plate or a metal block having a groove of a predetermined depth formed on the inner surface side. The groove of the second base 13C forms a refrigerant circulation space, and is disposed in the center of the inside of the second base 13C facing the first base 12C, and is formed to have a first bottom surface 132C that is shallow and flat, and a second bottom surface 136C that is connected to both side ends of the first bottom surface 132C and is deeper than the first bottom surface 132C. The second bottom surface 136C may be formed to be gradually deeper from the portion connected to the first bottom surface 132C toward both side ends. A side wall portion 137C located at the end of the second bottom surface 132C is provided with a cooling water inlet / outlet 133C that connects the space formed between the second bottom surface 136C and the first base 12C to the outside and is formed, for example, to allow cooling water to flow in and out.

[0064] Meanwhile, a plurality of fin grooves 138C corresponding to the plurality of cooling fins 123C of the first base 12C are disposed on the first bottom surface 132C of the second base 13C. The plurality of fin grooves 138C may be formed to accommodate a portion of an end of each of the plurality of cooling fins 123C. The plurality of cooling fins 123C may be formed in a shape such as a cylinder, an elliptical cylinder, a rectangular column, a hexagonal column, etc., and the plurality of fin grooves 138C may be formed in a corresponding shape such as a circle, an ellipse, a rectangle, a hexagon, etc., according to the shape of the plurality of cooling fins 123C, and may have a predetermined depth shorter than the length of the plurality of cooling fins 123C.

[0065] The second base 13C may be formed of an aluminum or aluminum alloy block, taking into consideration the volume depending on the depth of the first and second bottom surfaces 132C, 136C. In this case, the first and second bottom surfaces 132C, 136C and the fin grooves 138C may be at least partially formed by die casting. The first and second bottom surfaces 132C, 136C and side wall portion 137C may be formed by die casting, and the fin grooves 138C, which require precision, may be formed by cutting.

[0066] FIG. 11 illustrates an assembled state of the heat dissipation device-integrated base during a manufacturing process of a heat dissipation board for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention.

[0067] The heat dissipation device integrated base 10C according to the present embodiment may be formed by bonding two opposing inner surfaces of the first base 12C and the second base 13C. As an example, the first base 12C and the second base 13C may be joined to each other by brazing. A brazed joint 141C may be formed between a side wall portion 137C forming an edge of the second base 13C and a bottom surface of the first base 12C. At this time, the ends of the cooling fins 123C are inserted into the fin grooves 138C, and brazed joints may also be formed at contact portions between the ends of the cooling fins 123C and the fin grooves 138C.

[0068] This structure is advantageous in strengthening the bonding strength between the first base 12C and the second base 13C and in maintaining the bond between them even if there is a difference in the degree of thermal expansion due to differences in temperature and / or linear expansion coefficients between them. In addition, since the cooling fins 123C are fitted into the fin grooves 138C and supported in the lateral direction, it is possible to suppress thermal expansion deformation of the first base 12C in the lateral direction, i.e., in the direction parallel to the upper surface.

[0069] The refrigerant flow space formed between the first base 12C and the second base 13C is divided into a main cooling section 110C having a relatively narrow gap by the first bottom surface 132C and a water inlet / outlet section 116C having a relatively wide gap by the second bottom surface 136C on the side of the gap between the inner side of the first base 12C and the inner side of the second base 13C, and the flow rate of the refrigerant, e.g., the cooling water, is faster in the relatively narrow gap portion 110C. With this structure, the cooling water passes through the plurality of cooling fins 123C at a high speed, improving the cooling efficiency.

[0070] FIG. 12 illustrates a step of preparing an electrode metal plate in a process of manufacturing a heat dissipation substrate for a semiconductor integrated with a heat dissipation device according to an embodiment of the present invention.

[0071] An electrode metal plate 30C is prepared before or after the steps of Fig. 10 and Fig. 11. As in the embodiment of Fig. 5 described above, a pattern groove 320 corresponding to a circuit pattern including a plurality of electrodes is formed on the first surface 301 of the electrode metal plate 30C. The pattern groove 320 is formed by processing a portion corresponding to a pattern space between electrodes to a predetermined depth shallower than the thickness of the electrode metal plate 30, and a residual portion 321 of a predetermined thickness is left at the bottom of the pattern groove 320. The processing for forming the pattern groove 320 may be performed, for example, using a CNC cutting machine M, or may be performed by laser processing, press processing, or the like.

[0072] The step of preparing the electrode metal plate 30C according to this embodiment differs from the embodiment of FIG. 5 in that one or more electrode metal plates 30C correspond to one heat dissipation device-integrated base assembly. When a plurality of electrode metal plates 30C are used, the plurality of electrode metal plates 30C may each be formed with a circuit pattern constituting one circuit unit. For example, when a three-phase inverter module is constructed on one heat dissipation device-integrated base (10C, see FIG. 11), a circuit pattern constituting three inverter circuit units can be realized, one unit each on three electrode metal plates 30C. For this purpose, in this step, pattern grooves 320 corresponding to the circuit patterns can be formed on the three electrode metal plates 30C.

[0073] FIG. 13 illustrates a step of bonding an electrode metal plate and a heat dissipation device-integrated base in a manufacturing process of a heat dissipation board for semiconductors integrated with a heat dissipation device according to an embodiment of the present invention.

[0074] In this step, one or more electrode metal original plates 30C in which the pattern grooves 320 are formed by the step of Fig. 12 are bonded to the upper surface of the heat dissipation device integrated base 10C via the insulator parts 20C. Here, the insulator parts 20C may be applied as an insulating resin to the first surface 301 in which the pattern grooves 320 are formed in the electrode metal original plate 30C or the upper surface of the heat dissipation device integrated base 10C, as mentioned in the description of Fig. 6. Meanwhile, the insulator parts 20C may be provided in the form of a semi-cured sheet of insulating resin. Such a semi-cured sheet of insulating resin may include a ceramic mesh.

[0075] As described above, the vacuum hot pressing process can be applied as a method for hardening the insulator portion 20C so that the one or more electrode metal original plates 30C can be joined to the heat dissipation device-integrated base 10C via the insulator portion 20C. The vacuum hot pressing process may be performed at a temperature significantly lower than the melting point of the brazing joint 141C that joins the first and second bases 12C, 13C of the heat dissipation device-integrated base 10C.

[0076] FIG. 14 shows a cross section of a heat dissipation board for a semiconductor integrated with a heat dissipation device according to an embodiment of the present invention.

[0077] 13, as described above in the description of FIG 6, a process of removing a remaining portion (321, see FIG 12) from the electrode metal original plate 30C can be performed to complete a heat dissipation device-integrated heat dissipation substrate for semiconductor 100C in which one or more circuit units 36 are integrated and bonded to the upper surface of the heat dissipation device-integrated base 10C via an insulator portion 20C as shown in FIG 14. The process of removing the remaining portion 321 can include cutting and / or etching.

[0078] 13, a part of the insulator portion 20C forms an insulating layer 21C of a predetermined thickness between the electrode metal original plate 30C and the heat dissipation device-integrated base 10C, and another part fills the pattern groove 320. As a result, the insulating resin filling the pattern groove 320 forms an insulator filling portion 22C that supports a part of the side surface of the plurality of electrodes 31 in the pattern space 32 between the plurality of electrodes 31.

[0079] On the other hand, unlike the one described in the process of FIG. 13 to FIG. 14, the electrode metal original plate 30C on which the pattern groove 320 is formed may be arranged so that the second surface (302, see FIG. 13) opposite to the first surface 301 on which the pattern groove 320 is formed faces the upper surface of the heat dissipation device integrated base 10C, and joined via the insulator part 20C. In this case, the electrodes 31 may be formed in a shape like an island floating on the insulator part 20C. In this case, the form is different from that in the embodiment of FIG. 14, in which the electrodes 31 are arranged in a shape partially embedded in the insulator part 20C. However, in terms of the dropout strength of the electrodes 31, the arrangement form as in the embodiment of FIG. 14 is more advantageous.

[0080] FIG. 15 is an exploded perspective view of a base in the heat dissipation board for a semiconductor integrated with a heat dissipation device according to the embodiment of FIG.

[0081] This figure shows the first base 12C and the second base 13C of the heat dissipation device integrated base being open and not joined together, for the purpose of understanding the heat dissipation device integrated heat dissipation board for semiconductors according to the embodiment of Fig. 14. As described above, a plurality of cooling fins 123C are arranged on the bottom surface 121C of the first base 12C in a shape protruding from the bottom surface 121C.

[0082] The cooling fins 123C may be formed in, for example, an elliptical cylindrical shape. The fin grooves 138C are also formed in a shape corresponding to the cooling fins 123C. The refrigerant flow space formed in the recessed groove shape surrounded by the side wall portion 137C in the second base 13C is formed by the first bottom surface 132C, which is shallow and flat, and the second bottom surface 136C, which is connected to both ends of the first bottom surface 132C and gradually becomes deeper toward the outside, together with the bottom surface 121C of the first base 12C. The side wall portions 137C at both ends close to the second bottom surface 136C are provided with cooling water inlet / outlet 133C, the inside of which forms the water inlet / outlet portion 116C, and the shallow space formed by the first bottom surface 132C forms the main cooling portion 110C. The water inlet / outlet section 116C can be configured such that its depth gradually becomes shallower while its width gradually becomes wider as it moves from the cooling water inlet / outlet 133C toward the main cooling section 110C, so that the cooling water can come into contact with a greater number of cooling fins 123C in the main cooling section 110C.

[0083] The cooling fins 123C may be formed to have an elliptical cross section that is long in the longitudinal direction connecting the water inlet / outlet parts 116C on both sides of the main cooling part 110C. Such a shape of the cooling fins helps to reduce resistance to the flow of the cooling water. Although the present invention is not limited to this embodiment, it is preferable that the cross-sectional shape of the cooling fins 123C is formed to be a diamond shape whose width in the longitudinal direction is narrower than its width in the direction perpendicular thereto so that the cooling water can flow smoothly in a laminar flow.

[0084] Meanwhile, the first base 12C and the second base 13C are provided with a plurality of pinholes 129C and 139C, respectively, which can be used to align these components during processing. Also, the plurality of pinholes 129C and 139C may be used as screw holes for fastening the first base 12C to the second base 13C.

[0085] FIG. 16 is a perspective view of the heat dissipation board for a semiconductor integrated with a heat dissipation device according to the embodiment of FIG.

[0086] This figure shows the heat dissipation device-integrated heat dissipation board for semiconductor 100C according to this embodiment as viewed diagonally from above. One or more circuit units 36 may be arranged on the upper surface 126C of the first base 12C. For example, three inverter circuit units constituting a three-phase inverter module may be arranged on one heat dissipation device-integrated base, as described with reference to Figures 12 to 14.

[0087] FIG. 17 shows a cross section of a heat dissipation board for a semiconductor integrated with a heat dissipation device according to another embodiment of the present invention.

[0088] The heat dissipation board 100F for a semiconductor integrated with a heat sink according to this embodiment is different from the heat dissipation board 100C for a semiconductor integrated with a heat sink according to the embodiment of FIG. 14 in that the first bottom surface 132F of the second base 13F is flat and does not have fin grooves corresponding to the plurality of cooling fins 123F. The depth of the first bottom surface 132F relative to the upper end of the side wall portion 137F may be configured to match the length of the plurality of cooling fins 123F relative to the inner surface of the first base 12F, and the ends of the plurality of cooling fins 123F may be joined to the second bottom surface 132F via brazing joints 141F. This structure can increase the efficiency of heat conduction between the first base 12F and the second base 13F and improve structural stability. [Explanation of symbols]

[0089] 10, 10B: 10C, 10F: Heat dissipation device integrated base 12, 12C, 12F: 1st base 13, 13C, 13F: 2nd base 20, 20C: Insulation section 21, 21C: Insulating layer 22C: Insulator filling section 30, 30C: Electrode metal original plate 31: Electrode 32: Pattern Space 101, 102: Heat dissipation substrate for semiconductor integrated with heat dissipation device 122: First (water jacket) unit groove 123, 123C: Cooling fins 125: First (water jacket) unit parts 128: First flow path pattern groove 132: Second (water jacket) unit groove 135: 2nd (water jacket) unit parts 138: second flow path pattern groove, 138C: fin groove 141, 141C, 141F: Brazed joints 320: Pattern groove 321:Residual part

Claims

1. A method for manufacturing a heat dissipation substrate for semiconductors, the heat dissipation substrate being for mounting a semiconductor element, comprising: a plurality of electrodes separated from each other by pattern spaces and electrically insulated; a metal base integrally provided with a coolant flow space for absorbing and releasing heat transferred from the plurality of electrodes; and an insulating layer formed of insulating resin and joining the plurality of electrodes onto the metal base, a base processing step of preparing a first base original plate and a second base original plate in the form of metal plates that are stacked on each other to form at least a part of the metal base, and providing a first base and a second base on at least one inner side surface of the first base original plate and the second base original plate, the first base and the second base having a three-dimensional structure that forms the refrigerant flow space; a base coupling step of butting and coupling inner surfaces of the first base and the second base facing each other to form a heat dissipation device-integrated base including the refrigerant flow space; an electrode metal original plate preparation step of processing an electrode metal original plate, which is a metal plate material that will form the plurality of electrodes, to form pattern grooves corresponding to the pattern spaces, and providing an electrode metal original plate that can cover an area corresponding to at least one circuit unit by a residual portion left after forming the pattern grooves so that no opening is generated; and an electrode metal plate bonding step of bonding the electrode metal plate to an upper surface of the heat dissipation device integrated base formed in the base bonding step via an insulating resin. A method for manufacturing a heat dissipation substrate for semiconductors with an integrated heat dissipation device.

2. The base bonding step comprises: The first base and the second base are joined together by a brazing process. A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 1 .

3. The electrode metal plate bonding step includes: forming an insulating layer between the first surface of the electrode metal plate on which the pattern groove is formed and the upper surface of the heat dissipation device integrated base, and bonding the electrode metal plate so that the pattern groove is filled with an insulator; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 1 .

4. The electrode metal plate bonding step includes: forming the insulating layer using a semi-cured insulating resin sheet; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 3.

5. and an electrode forming step of removing the remaining portion from the upper surface of the electrode metal plate after the electrode metal plate joining step, to separate the plurality of electrodes from each other. A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 3.

6. The base processing step and the base bonding step include: a heat dissipation device unit including the refrigerant flow space formed between two opposing inner surfaces of the first and second bases, the heat dissipation device unit being selected from a group including a water jacket, a heat exchanger, and a heat pipe, is integrally formed by processing the first and second bases and bonding the first and second bases; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 1 .

7. The base processing step includes: processing the first and second bases so that a plurality of the heat dissipation device units are arranged in a plane within one of the heat dissipation device-integrated bases; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 6.

8. a plurality of circuit units each constituting one circuit by the plurality of electrodes and the pattern space are disposed on the upper portion of the heat dissipation device integrated base in correspondence with the plurality of heat dissipation device units, thereby preparing an original plate for a heat dissipation substrate for semiconductors; The method further includes a cutting step of cutting the original plate of the semiconductor heat dissipation substrate to provide a plurality of heat dissipation device-integrated semiconductor heat dissipation substrate units. A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 7.

9. The base processing step processes the first and second bases so that one heat dissipation device unit is configured in one heat dissipation device integrated base; The electrode metal plate preparation step and the electrode metal plate joining step include providing a plurality of electrode metal plates each having a pattern groove corresponding to one circuit unit, and joining the plurality of electrode metal plates to an upper surface of the heat dissipation device-integrated base. A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 6.

10. A method for manufacturing a heat dissipation substrate for semiconductors, the heat dissipation substrate being for mounting a semiconductor element, comprising: a plurality of electrodes separated from each other by pattern spaces and electrically insulated; a metal base integrally provided with a coolant flow space for absorbing and releasing heat transferred from the plurality of electrodes; and an insulating layer formed of insulating resin and joining the plurality of electrodes onto the metal base, a base processing step of preparing a first base original plate and a second base original plate in the form of metal plates that are stacked on each other to form at least a part of the metal base, and providing a first base and a second base on at least one inner side surface of the first base original plate and the second base original plate, the first base and the second base having a three-dimensional structure that forms the refrigerant flow space; a base coupling step of butting and coupling inner surfaces of the first base and the second base facing each other to form a heat dissipation device-integrated base including the refrigerant flow space; an electrode metal plate bonding step of bonding the flat electrode metal plate onto an upper surface of the heat dissipation device integrated base via an insulating resin; and forming the plurality of electrodes by removing a pattern corresponding to the pattern space from the electrode metal original plate. A method for manufacturing a heat dissipation substrate for semiconductors with an integrated heat dissipation device.

11. The base processing step forms a plurality of cooling fins protruding from a bottom surface of the first base, the base joining step includes joining the end portions of the plurality of cooling fins to a bottom surface of a three-dimensional structure forming the refrigerant flow space of the second base so as to be fixed and supported at least in a lateral direction parallel to a plane to which the base belongs. A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 1 or 10.

12. The base processing step forms a plurality of fin grooves in the bottom surface of the second base to accommodate the ends of the plurality of cooling fins; the base joining step includes joining the first and second bases together in a state in which the ends of the cooling fins are inserted into the fin grooves; A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 11.

13. The base joining step includes butting inner surfaces of the first and second bases against each other and brazing the inner surfaces of the first and second bases together, and brazing the ends of the cooling fins to the bottom surface. A method for manufacturing the heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 11.

14. a first base having a flat upper surface and an electrode pattern that forms a predetermined circuit bonded to the upper surface via an insulating layer; a second base disposed under the first base, coupled to and facing a bottom surface of the first base, and having a three-dimensional structure that defines a refrigerant flow space between the second base and the bottom surface of the first base; a plurality of cooling fins protruding from a bottom surface of the first base toward the refrigerant flow space, The end portions of the plurality of cooling fins are fixedly supported on a bottom surface of the three-dimensional structure inside the second base. A heat dissipation substrate for semiconductors with integrated heat dissipation device.

15. the second base further includes a plurality of fin grooves on the bottom surface for receiving end portions of the plurality of cooling fins, and the first base and the second base are coupled to each other with the end portions of the plurality of cooling fins inserted into the plurality of fin grooves. The heat dissipation substrate for semiconductors integrated with a heat dissipation device according to claim 14.

Images