Substrate processing apparatus and substrate processing method

Abstract

To provide a technique, which limits substrate misalignment.SOLUTION: A substrate processing apparatus comprises: a first adsorption part that adsorbs the first area of the underside of a substrate; a second adsorption part that adsorbs the second area of the underside of the substrate; and a friction body that rubs the first area of the underside of the substrate with the second adsorption part adsorbing the substrate and rubs the second area of the underside of the substrate with the first adsorption part adsorbing the substrate. The second area is an area located radially outward from the first area on the substrate. The substrate processing apparatus has a contact part in the second absorption part that restricts the substrate misalignment by contact with the periphery of the substrate.SELECTED DRAWING: Figure 10

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method. [Background technology]

[0002] The substrate processing apparatus described in Patent Document 1 includes two suction pads, a liquid receiving cup, a spin chuck, a first cleaning unit, and a second cleaning unit. The two suction pads horizontally suction-hold the lower surface of the substrate. The liquid receiving cup is connected to the two suction pads. The spin chuck horizontally suction-holds the lower surface of the substrate received from the suction pads. The first cleaning unit cleans the upper surface of the substrate. The second cleaning unit cleans the lower surface of the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2020-43156 A Summary of the Invention [Problem to be solved by the invention]

[0004] One aspect of the present disclosure provides techniques for limiting substrate misalignment. [Means for solving the problem]

[0005] A substrate processing apparatus according to an aspect of the present disclosure includes a first suction unit that suctions a first region of an underside of a substrate, a second suction unit that suctions a second region of the underside of the substrate, and a friction body that rubs the first region of the underside of the substrate while the second suction unit is suctioning the substrate, and rubs the second region of the underside of the substrate while the first suction unit is suctioning the substrate. The second region is a region radially outward of the substrate than the first region. The substrate processing apparatus includes a contact unit that is provided on the second suction unit and contacts a peripheral edge of the substrate to limit positional deviation of the substrate. Effect of the Invention

[0006] According to one aspect of the present disclosure, it is possible to limit misalignment of a substrate. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a plan view showing an example of a substrate processing system. [Diagram 2] FIG. 2 is a plan view showing an example of the substrate processing apparatus, and is a plan view showing an example of step S104 of FIG. [Diagram 3] FIG. 3 is a cross-sectional view showing an example of step S104 in FIG. [Figure 4] FIG. 4 is a plan view showing an example of step S102 in FIG. [Diagram 5] FIG. 5 is a cross-sectional view showing an example of step S102 in FIG. [Figure 6] FIG. 6 is a cross-sectional view showing an example of the operation of the first lifting section. [Figure 7] FIG. 7 is a cross-sectional view showing an example of the operation of the first lifting section following FIG. [Figure 8] FIG. 8 is a plan view showing an example of a first region and a second region on the lower surface of the substrate. [Figure 9] FIG. 9 is a flowchart showing an example of the operation of the substrate processing apparatus. [Figure 10] FIG. 10 is a plan view showing an example of a contact portion by cutting away a part of the cup shown in FIG. [Figure 11] FIG. 11 is a cross-sectional view showing an example of an inclined surface of the contact portion. [Figure 12] FIG. 12 is a cross-sectional view showing an example of the state of the contact portion when the first lifting portion lowers the substrate onto the second suction portion. [Figure 13] FIG. 13 is a cross-sectional view showing an example of a state of a contact portion when the friction body rubs against a first region on the lower surface of the substrate. [Figure 14] FIG. 14 is a cross-sectional view showing an example of a state of the contact portion when the second suction portion releases the suction of the substrate. [Figure 15]FIG. 15 is a cross-sectional view showing an example of a state of the contact portion when the second lifting portion lowers the second suction portion so that the substrate is transferred from the second suction portion to the first suction portion. [Figure 16] FIG. 16 is a cross-sectional view showing an example of a state of the contact portion when the friction body rubs against the second region of the lower surface of the substrate. [Figure 17] FIG. 17 is a cross-sectional view showing an example of a state of the contact portion when the first suction portion releases the suction of the substrate. [Figure 18] FIG. 18 is a diagram showing an example of a state of the contact portion when the first lifting portion lifts the substrate from the first suction portion. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. Note that in each drawing, the same or corresponding configurations are denoted by the same reference numerals, and description thereof may be omitted. In this specification, the X-axis direction, the Y-axis direction, and the Z-axis direction are perpendicular to each other. The X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is vertical. The X-axis direction includes the X-axis positive direction and the X-axis negative direction that is opposite to the X-axis positive direction. The Y-axis direction includes the Y-axis positive direction and the Y-axis negative direction that is opposite to the Y-axis positive direction. The Z-axis direction includes the Z-axis positive direction and the Z-axis negative direction that is opposite to the Z-axis positive direction.

[0009] An example of a substrate processing system 100 will be described with reference to FIG. 1. The substrate processing system 100 processes a substrate W. The substrate W includes a semiconductor wafer such as a silicon wafer. The substrate W may include a plurality of devices formed on the semiconductor wafer. The devices include, for example, electronic circuits. The substrate W may be a laminated substrate formed by stacking a plurality of semiconductor wafers. The laminated substrate is obtained by bonding a plurality of semiconductor wafers.

[0010] The substrate processing system 100 includes a loading / unloading station 110, a processing station 120, and a control device 190. The loading / unloading station 110 includes a mounting table 111. Cassettes C1 to C2 are mounted on the mounting table 111. The cassette C1 accommodates a substrate W before processing. The cassette C2 accommodates a substrate W after processing. The number of cassettes C1, C2 is not particularly limited. A cassette not shown may accommodate a substrate W that has become defective during processing.

[0011] The loading / unloading station 110 includes a first transfer region 112 and a first transfer device 113. The first transfer region 112 extends in the Y-axis direction and is adjacent to the mounting table 111 and the transition device 121. The first transfer device 113 transfers the substrate W between a plurality of devices adjacent to the first transfer region 112. The first transfer device 113 includes a transfer arm that holds the substrate W, and a drive unit that moves or rotates the transfer arm. The transfer arm is capable of moving in the horizontal direction (both in the X-axis direction and the Y-axis direction) and the vertical direction (the Z-axis direction) and of rotating about the vertical axis. A plurality of transfer arms may be provided.

[0012] The processing station 120 includes a transition device 121, a second transfer region 122, a second transfer device 123, and a substrate processing device 124. Note that the arrangement and number of devices constituting the processing station 120 are not limited to those shown in FIG.

[0013] The transition device 121 temporarily stores the substrate W. The transition device 121 is provided between the first transfer region 112 and the second transfer region 122, and relays the substrate W between the first transfer device 113 and the second transfer device 123.

[0014] The second transfer region 122 extends in the X-axis direction and is adjacent to the transition device 121 and the substrate processing device 124. The second transfer device 123 transfers the substrate W between multiple devices adjacent to the second transfer region 122. The second transfer device 123 has a transfer arm that holds the substrate W, and a drive unit that moves or rotates the transfer arm. The transfer arm is capable of moving in the horizontal direction (both in the X-axis direction and the Y-axis direction) and the vertical direction, and of rotating about the vertical axis. Multiple transfer arms may be provided.

[0015] The substrate processing apparatus 124 processes the substrate W with a processing liquid. The processing liquid includes, for example, a chemical liquid and a rinsing liquid. The chemical liquid is not particularly limited, but may be, for example, SC1 (a mixture of ammonia, hydrogen peroxide, and water). The chemical liquid may be a cleaning liquid for removing dirt from the substrate W, as well as an etching liquid or a stripping liquid. The rinsing liquid is, for example, DIW (deionized water). The chemical liquid and the rinsing liquid may be supplied to the substrate W in this order.

[0016] The control device 190 is, for example, a computer, and includes an arithmetic unit 191 such as a CPU (Central Processing Unit), and a storage unit 192 such as a memory. The storage unit 192 stores programs for controlling various processes executed in the substrate processing system 100. The control device 190 controls the operation of the substrate processing system 100 by causing the arithmetic unit 191 to execute the programs stored in the storage unit 192. A unit controller for controlling the operation of each unit constituting the substrate processing system 100 may be provided, and a system controller for overall control of a plurality of unit controllers may be provided. The control device 190 may be configured by the unit controllers and the system controller.

[0017] Next, a description will be given of an example of the operation of the substrate processing system 100. First, the first transfer device 113 takes out the substrate W from the cassette C1 and transfers it to the transition device 121. Next, the second transfer device 123 takes out the substrate W from the transition device 121 and transfers it to the substrate processing device .

[0018] Next, the substrate processing apparatus 124 processes the substrate W with a processing liquid. Thereafter, the second transfer apparatus 123 takes the substrate W out of the substrate processing apparatus 124 and transfers it to the transition apparatus 121. Finally, the first transfer apparatus 113 takes the substrate W out of the transition apparatus 121 and stores it in the cassette C2.

[0019] Next, an example of the substrate processing apparatus 124 will be described mainly with reference to Figures 2 to 8. As mainly shown in Figure 3, the substrate processing apparatus 124 includes, for example, a first suction unit 11, a second suction unit 12, a rotation drive unit 13, a first lifting unit 14, a cup 20, a second lifting unit 25 (see Figure 2), a horizontal movement unit 26 (see Figure 2), a cleaning unit 30, a processing tank 40, a drain pipe 45, an exhaust pipe 46, an exhaust pipe cover 47, a friction body 50, and a friction body movement unit 55.

[0020] The first suction unit 11 contacts a first area A1 on the lower surface of the substrate W shown in FIG. 8 and horizontally suctions the substrate W. The first area A1 is an area including the center of the lower surface of the substrate W. In this embodiment, the first suction unit 11 vacuum-suctions the substrate W, but may electrostatically suction the substrate W. The first suction unit 11 is, for example, a spin chuck, and is rotationally driven by a rotation drive unit 13. The first suction unit 11 is rotated about a vertical rotation axis. The first suction unit 11 may be movable in the Z-axis direction.

[0021] A first lifting section 14 is arranged around the first suction section 11. The first lifting section 14 abuts against the lower surface of the substrate W to lift and lower the substrate W. The first lifting section 14 includes, for example, lifting pins. A plurality of lifting pins (for example, three) are arranged at equal intervals in the circumferential direction of the first suction section 11. The first lifting section 14 transfers the substrate W between the first suction section 11 or the second suction section 12 and the transport arm of the second transport device 123.

[0022] In addition, a gas discharge ring 15 is disposed around the first adsorption unit 11. The gas discharge ring 15 surrounds the first adsorption unit 11 and forms a ring-shaped gas curtain toward the lower surface of the substrate W. The gas curtain restricts the processing liquid from entering from the outside to the inside, and protects the first adsorption unit 11. The gas curtain also protects the first lift unit 14 disposed inside it. The gas discharge unit does not have to be ring-shaped.

[0023] The second suction portion 12 contacts the second region A2 on the lower surface of the substrate W shown in FIG. 8 and horizontally suctions the substrate W. The second region A2 is a region radially outward of the substrate W from the first region A1. The second region A2 is provided as a pair on either side of the center of the lower surface of the substrate W. The pair of second suction portions 12 suction the pair of second regions A2. In this embodiment, the second suction portion 12 vacuum-sucks the substrate W, but may electrostatically suction the substrate W. The second suction portion 12 is, for example, a suction pad, and is disposed on either side of the first suction portion 11 in the X-axis direction. The second suction portion 12 is connected to the cup 20 and can move together with the cup 20 in the horizontal direction (Y-axis direction) and vertical direction.

[0024] The cup 20 is ring-shaped and open both vertically and surrounds the periphery of the substrate W held by the first suction portion 11 or the second suction portion 12. The cup 20 has a cylindrical vertical wall 21 and an upper wall 22 that protrudes radially inward from the upper end of the cylindrical vertical wall 21. The cup 20 receives the processing liquid supplied to the substrate W.

[0025] The second lifting unit 25 lifts and lowers the second suction unit 12. The second lifting unit 25 lifts and lowers the second suction unit 12 together with the cup 20. The horizontal moving unit 26 moves the second suction unit 12 in a horizontal direction (Y-axis direction) perpendicular to the rotation axis of the first suction unit 11. The horizontal moving unit 26 moves the second suction unit 12 in the Y-axis direction together with the cup 20. The cup 20 is moved inside the treatment tank 40. When viewed from above, the side surface 42 of the treatment tank 40 surrounds the entire movement range of the cup 20.

[0026] The cleaning unit 30 supplies a processing liquid to the substrate W surrounded by the cup 20. The processing liquid includes, for example, a chemical liquid and a rinsing liquid. The chemical liquid is not particularly limited, but may be, for example, SC1 (a mixture of ammonia, hydrogen peroxide, and water). The chemical liquid may be a cleaning liquid that removes dirt from the substrate W, as well as an etching liquid or a stripping liquid. The rinsing liquid is, for example, DIW (deionized water). The chemical liquid and the rinsing liquid may be supplied to the substrate W in this order.

[0027] The cleaning unit 30 has lower nozzles 31, 32 (see Figures 2 and 4) that supply processing liquid to the underside of the substrate W. The lower nozzles 31, 32 are each connected to a processing liquid supply source via piping (not shown). A valve and a flow rate controller are provided along the piping. When the valve opens the flow path of the piping, the processing liquid is discharged from the lower nozzles 31, 32. The amount of the processing liquid discharged is controlled by the flow rate controller. On the other hand, when the valve closes the flow path of the piping, the discharge of the processing liquid is stopped.

[0028] The cleaning unit 30 has an upper nozzle 33 (see FIG. 3) that supplies a processing liquid to the upper surface of the substrate W. The upper nozzle 33 is connected to a processing liquid supply source via a pipe (not shown) like the lower nozzles 31 and 32. The upper nozzle 33 may be a two-fluid nozzle, and may crush and atomize the processing liquid with a gas such as N2 gas before spraying it.

[0029] The cleaning unit 30 has a nozzle moving unit 34 that moves the upper nozzle 33 in horizontal and vertical directions. The nozzle moving unit 34 moves the upper nozzle 33 between a position where the processing liquid is supplied to the substrate W surrounded by the cup 20 (see FIG. 3) and a position where the discharge port of the upper nozzle 33 is accommodated in the nozzle bath 35 (see FIG. 5).

[0030] The nozzle bath 35 is also called a dummy dispense port. Just before supplying the processing liquid from the upper nozzle 33 to the substrate W, old processing liquid (e.g., processing liquid whose temperature has been reduced) accumulated in the upper nozzle 33 is discharged into the nozzle bath 35, so that new processing liquid (e.g., processing liquid whose temperature has been controlled to a desired temperature) can be supplied to the substrate W. A discharge pipe is provided on the bottom wall of the nozzle bath 35. The discharge pipe discharges the processing liquid accumulated inside the nozzle bath 35 into the processing tank 40. The discharge pipe is provided vertically. The processing liquid flows down inside the discharge pipe due to gravity. The lower end of the discharge pipe is located above the bottom surface 43 of the processing tank 40.

[0031] The processing tank 40 collects the processing liquid that drops from the cup 20. The processing tank 40 is, for example, in the shape of a box that is open upward. An inner wall surface 41 of the processing tank 40 has a side surface 42 and a bottom surface 43. The bottom surface 43 has an outlet 44 for discharging the processing liquid. A drain pipe 45 is provided in the outlet 44. The drain pipe 45 discharges the processing liquid from the inside of the processing tank 40 to the outside. In addition to the drain pipe 45, an exhaust pipe 46 is provided in the bottom surface 43 of the processing tank 40. The exhaust pipe 46 is provided, for example, on both sides in the X-axis direction with respect to the rotation drive unit 13.

[0032] The exhaust pipe 46 exhausts gas from the inside of the treatment tank 40 to the outside. The exhaust pipe 46 protrudes upward from the bottom surface 43 of the treatment tank 40. The upper part of the exhaust pipe 46 is covered with an exhaust pipe cover 47. The exhaust pipe cover 47 prevents droplets of the treatment liquid from entering the exhaust pipe 46. The exhaust pipe cover 47 also protects the rotary drive unit 13 from droplets of the treatment liquid. The exhaust pipe cover 47 extends in both the positive X-axis direction and the negative X-axis direction with the rotary drive unit 13 as the reference.

[0033] The friction body 50 rubs the lower surface of the substrate W. The friction body 50 is a brush or a sponge. The friction body 50 is, for example, cylindrical, and the upper surface of the friction body 50 is disposed horizontally. The upper surface of the friction body 50 is smaller than the lower surface of the substrate W. The friction body 50 is formed of a resin such as PVA (polyvinyl alcohol).

[0034] The friction body 50 is rotated by a rotary motor 51. The rotary motor 51 is provided at one end of an arm 53. A friction body moving unit 55 is provided at the other end of the arm 53. The friction body moving unit 55 moves the friction body 50 via the arm 53 in the horizontal and vertical directions.

[0035] Next, an example of the operation of the substrate processing apparatus 124 will be described with reference to Fig. 9. As shown in Fig. 9, the substrate processing apparatus 124 performs steps S101 to S106. Steps S101 to S106 are performed under the control of a control device 190. The control device 190 may be a part of the substrate processing apparatus 124.

[0036] Step S101 includes carrying the substrate W from the outside to the inside of the substrate processing apparatus 124. First, the transport arm of the second transport device 123 transports the substrate W above the cup 20, and waits above the cup 20. At this time, when viewed from above, the center of the substrate W, the center of the first suction portion 11, and the center of the cup 20 overlap with each other, as shown in FIG.

[0037] The first lifting section 14 lifts the multiple lifting pins and receives the substrate W from the transport arm of the second transport device 123. At this time, the transport arm may be lowered. Thereafter, when the transport arm retreats from the substrate processing apparatus 124, the second lifting section 25 lifts the cup 20, and the first lifting section 14 lowers the substrate W together with the multiple lifting pins, and lowers the substrate W onto the second suction section 12 (see FIG. 7).

[0038] Next, the second suction portion 12 suctions the second area A2 on the lower surface of the substrate W. Thereafter, as shown in Fig. 4, the horizontal moving portion 26 moves the substrate W together with the cup 20 and the second suction portion 12 in the horizontal direction (Y-axis negative direction) to a position where the first area A1 on the lower surface of the substrate W overlaps with the friction body 50 when viewed from above.

[0039] 5, step S102 includes cleaning the center portion of the lower surface of the substrate W. For example, in a state in which the second adsorption portion 12 adsorbs the second region A2 of the lower surface of the substrate W, the friction body 50 rubs the first region A1 of the lower surface of the substrate W. It is sufficient for the friction body 50 to rub at least the first region A1, and it may rub an area larger than the first region A1. It is sufficient for the friction body 50 to rub the entire lower surface of the substrate W in steps S102 and S104.

[0040] The friction body moving unit 55 moves the friction body 50 in the horizontal direction while pressing it against the first region A1 on the underside of the substrate W. In addition, the horizontal moving unit 26 moves the second suction unit 12 together with the cup 20 in the horizontal direction (the positive Y-axis direction and the negative Y-axis direction). The moving direction of the friction body 50 intersects with the moving direction of the cup 20. While the friction body 50 rubs the first region A1 on the underside of the substrate W, the lower nozzles 31 and 32 supply the processing liquid to the first region A1 on the underside of the substrate W.

[0041] Step S103 includes transferring the substrate W from the second suction portion 12 to the first suction portion 11. First, the horizontal moving portion 26 moves the substrate W together with the cup 20 and the second suction portion 12 in the horizontal direction (positive direction of the Y axis) to a position where the center of the substrate W overlaps with the center of the first suction portion 11 as viewed from above, as shown in FIG.

[0042] Next, the second suction portion 12 releases the suction of the lower surface of the substrate W. Subsequently, the second lifting portion 25 lowers the substrate W together with the second suction portion 12, and the substrate W is transferred from the second suction portion 12 to the first suction portion 11. Thereafter, the first suction portion 11 starts suctioning the lower surface of the substrate W. While the second lifting portion 25 lowers the substrate W together with the second suction portion 12, neither the first suction portion 11 nor the second suction portion 12 needs to suction the substrate W so that no load is applied to the substrate W.

[0043] 3, step S104 includes cleaning the peripheral portion of the lower surface of the substrate W. With the first suction portion 11 suctioning the first region A1 of the lower surface of the substrate W, the friction body 50 rubs the second region A2 of the lower surface of the substrate W. It is sufficient for the friction body 50 to rub at least the second region A2, and it may rub an area larger than the second region A2. In steps S102 and S104, it is sufficient for the friction body 50 to rub the entire lower surface of the substrate W.

[0044] The friction body moving unit 55 moves the friction body 50 in the horizontal direction while pressing it against the second region A2 on the underside of the substrate W. In addition, the rotation drive unit 13 rotates the substrate W together with the first suction unit 11. While the friction body 50 rubs the second region A2 on the underside of the substrate W, the lower nozzles 31, 32 supply the processing liquid to the second region A2 on the underside of the substrate W.

[0045] Incidentally, while the rotation drive unit 13 rotates the substrate W together with the first suction unit 11, the upper surface of the substrate W is cleaned. For example, the upper nozzle 33 supplies the processing liquid to the upper surface of the substrate W. The upper nozzle 33 may supply the processing liquid to the center of the upper surface of the substrate W, or may be moved in the radial direction of the substrate W to supply the processing liquid over the entire radial direction of the substrate W. Also, a second friction body (not shown) may rub the upper surface of the substrate W. Also, a third friction body (not shown) may rub the bevel of the substrate W.

[0046] Step S105 includes drying the substrate W. For example, the rotary drive unit 13 rotates the first adsorption unit 11 at high speed to shake off the processing liquid adhering to the substrate W.

[0047] Step S106 includes unloading the substrate W from inside the substrate processing apparatus 124 to the outside. First, the first suction unit 11 releases the suction of the substrate W, and the first lift unit 14 lifts the substrate W together with the multiple lift pins. Next, the transport arm of the second transport device 123 enters the inside of the substrate processing apparatus 124 from the outside, and receives the substrate W from the multiple lift pins. At this time, the transport arm may be lifted, or the lift pins may be lowered. Thereafter, the transport arm exits the substrate processing apparatus 124.

[0048] As described above, the substrate W is transferred between a plurality of members. First, the substrate W is transferred from the transport arm of the second transport device 123 to the first lifting / lowering unit 14, and then transferred from the first lifting / lowering unit 14 to the second suction unit 12. Thereafter, the second suction unit 12 starts to suction the substrate W. With the second suction unit 12 suctioning the second region A2 on the lower surface of the substrate W, the friction body 50 rubs the first region A1 on the lower surface of the substrate W. Next, the substrate W is transferred from the second suction unit 12 to the first suction unit 11. At this time, the second suction unit 12 releases the suction of the substrate W, and the first suction unit 11 starts to suction the substrate W. Then, with the first suction unit 11 suctioning the first region A1 on the lower surface of the substrate W, the friction body 50 rubs the second region A2 on the lower surface of the substrate W. Next, the substrate W is transferred from the first suction unit 11 to the first lifting / lowering unit 14. At this time, the first suction section 11 releases the suction of the substrate W. Finally, the substrate W is transferred from the first lift section 14 to the transport arm of the second transport device 123.

[0049] The substrate processing apparatus 124 is provided with an abutment portion 60 as shown in Fig. 10 in order to limit misalignment of the substrate W when viewed from above when the substrate W is transferred, when suction of the substrate W begins, or when suction of the substrate W is released. The abutment portion 60 limits misalignment of the substrate W by abutting against the peripheral edge of the substrate W. That is, the abutment portion 60 brings the position of the substrate W into a tolerance range from the target position by abutting against the peripheral edge of the substrate W. The tolerance range is determined so that the substrate processing apparatus 124 can process the substrate W appropriately.

[0050] When the substrate W is at the target position, the contact portion 60 does not need to come into contact with the substrate W. When the substrate W is at the target position, the clearance between the substrate W and the contact portion 60 is not particularly limited, but is, for example, 0.1 mm. When the substrate W deviates from the target position, the contact portion 60 comes into contact with the substrate W. Even when the substrate W has a complex warp or the coefficient of friction of the lower surface of the substrate W is small, the contact portion 60 can limit the displacement of the substrate W.

[0051] The contact portion 60 is provided on the second suction portion 12. The second suction portion 12 has a constant relative position with respect to the substrate W when viewed from above, from when the substrate W is carried in to when the substrate W is unloaded. Therefore, if the contact portion 60 is provided on the second suction portion 12, the relative position of the contact portion 60 with respect to the substrate W when viewed from above, from when the substrate W is carried in to when the substrate W is unloaded. Therefore, the contact portion 60 can restrict positional deviation of the substrate W in various situations, from when the substrate W is carried in to when the substrate W is unloaded.

[0052] The second suction portion 12 and the abutment portion 60 are connected to the cup 20 and can move horizontally (in the positive Y-axis direction and the negative Y-axis direction) together with the cup 20. The position of the cup 20 relative to the substrate W is constant when viewed from above, from when the substrate W is loaded to when the substrate W is unloaded. The cup 20 surrounds the periphery of the substrate W. If the second suction portion 12 and the abutment portion 60 can move horizontally together with the cup 20, the position of the abutment portion 60 relative to the substrate W is constant when viewed from above, from when the substrate W is loaded to when the substrate W is unloaded.

[0053] One or more abutment portions 60 (two in FIG. 10) are provided on each of the pair of second suction portions 12, for a total of three or more abutment portions 60 (four in FIG. 10). This makes it possible to limit misalignment of the substrate W in four directions (the positive X-axis direction, the negative X-axis direction, the positive Y-axis direction, and the negative Y-axis direction). The number and arrangement of the abutment portions 60 are not particularly limited. Even if the total number of abutment portions 60 is three, it is possible to limit misalignment of the substrate W in four directions (the positive X-axis direction, the negative X-axis direction, the positive Y-axis direction, and the negative Y-axis direction).

[0054] The vertical wall 21 of the cup 20 is ring-shaped, and a pair of connecting plates 23 are provided inside the vertical wall 21. A second suction portion 12 and a contact portion 60 are attached to each of the pair of connecting plates 23. The contact portions 60 are provided at both ends in the longitudinal direction of the connecting plate 23 (the end in the positive Y-axis direction and the end in the negative Y-axis direction). In addition, the second suction portion 12 is provided in the center of the connecting plate 23 in the longitudinal direction.

[0055] Although second suction portion 12 and contact portion 60 are fixed to cup 20 in this embodiment, they may not be fixed to cup 20, and may be movable, for example, in the vertical direction (positive direction of the Z axis and negative direction of the Z axis) relative to cup 20. Second suction portion 12 and contact portion 60 may be provided detachably with respect to connecting plate 23.

[0056] 11, the contact portion 60 may have a vertical surface 61 that contacts the peripheral edge of the substrate W. The vertical surface 61 can limit positional deviation of the substrate W in a horizontal direction perpendicular to the vertical surface 61. In this embodiment, the vertical surface 61 is a curved surface that follows the peripheral edge of the substrate W, but it may be a flat surface. The vertical surface 61 may be composed of a curved surface and a flat surface.

[0057] The contact portion 60 may have an inclined surface 62 that contacts the peripheral edge of the substrate W. The inclined surface 62 inclines radially inwardly of the substrate W as it extends downward. When the first lifting portion 14 lowers the substrate W onto the second suction portion 12, the inclined surface 62 can shift the substrate W radially inwardly of the substrate W, and the position of the substrate W can be guided to a target position.

[0058] When the second suction portion 12 suctions the substrate W, the contact portion 60 may protrude above the upper surface of the substrate W. Although details will be described later, as shown in Fig. 17, even if the second suction portion 12 is not in contact with the lower surface of the substrate W, the contact portion 60 can limit misalignment of the substrate W. The contact portion 60 protrudes above the second suction portion 12. The greater the amount of protrusion, the more the contact portion 60 can limit misalignment of the substrate W in various situations.

[0059] The role of the contact portion 60 will be described below in order with reference to Figs. 12 to 18. As shown in Fig. 12, the first lifting portion 14 lowers the substrate W together with a plurality of lifting pins, and lowers the substrate W onto the second suction portion 12. The contact portion 60 restricts the position of the substrate W from being shifted due to vibrations caused when the substrate W is lowered. The contact portion 60 protrudes upward beyond the second suction portion 12. The contact portion 60 can restrict the positional shift of the substrate W even before the substrate W comes into contact with the second suction portion 12.

[0060] The substrate processing apparatus 124 may include a third lifting section (not shown) that raises and lowers the contact section 60 relative to the second suction section 12. If the third lifting section raises the contact section 60, the contact section 60 can limit misalignment of the substrate W when the first lifting section 14 receives the substrate W from the transport arm of the second transport apparatus 123. Thereafter, the third lifting section may lower the contact section 60 while the first lifting section 14 lowers the substrate W together with the multiple lifting pins. The lowering speed of the contact section 60 is set to the same speed as the lowering speed of the substrate W. During the lowering of the substrate W, the misalignment of the substrate W can always be limited.

[0061] 12, the second suction portion 12 receives the substrate W from the first lifting portion 14 and starts suctioning the substrate W. The contact portion 60 can limit the position of the substrate W from being shifted due to an impact at the start of suction or deformation of the substrate W associated with the start of suction.

[0062] 13, while the second suction portion 12 is suctioning the substrate W, the friction body 50 rubs the lower surface of the substrate W. When the substrate W shifts laterally relative to the second suction portion 12 due to friction between the friction body 50 and the substrate W, the peripheral edge of the substrate W abuts against the abutment portion 60. Therefore, while the friction body 50 rubs the lower surface of the substrate W, the abutment portion 60 can limit the positional shift of the substrate W.

[0063] 14, the second suction portion 12 releases the suction of the substrate W. The contact portion 60 can restrict the position of the substrate W from being shifted due to an impact when the suction is released or due to deformation of the substrate W associated with the release of the suction.

[0064] 15, the second lifting / lowering unit 25 (see FIG. 2, etc.) lowers the substrate W together with the second suction unit 12 to transfer the substrate W from the second suction unit 12 to the first suction unit 11. The contact unit 60 can restrict the position of the substrate W from being shifted due to vibrations caused when the substrate W is lowered together with the second suction unit 12. The second lifting / lowering unit 25 lowers the contact unit 60 together with the second suction unit 12.

[0065] When the second lifting section 25 lowers the substrate W together with the second suction section 12, the first suction section 11 and the second suction section 12 do not have to suction the substrate W so as to avoid applying a load to the substrate W. Even if the first suction section 11 and the second suction section 12 do not suction the substrate W, the contact section 60 can limit the positional deviation of the substrate W, so suction of the substrate W is not necessary.

[0066] 15, the first suction portion 11 receives the substrate W from the second suction portion 12 and starts suctioning the substrate W. The contact portion 60 can restrict the position of the substrate W from being shifted due to an impact at the start of suction or deformation of the substrate W associated with the start of suction. The second lifting portion 25 stops the second suction portion 12 at a position below the lower surface of the substrate W.

[0067] 16, while the first suction portion 11 is suctioning the lower surface of the substrate W, the rotation drive portion 13 rotates the substrate W together with the first suction portion 11. At this time, the second lift portion 25 lowers the contact portion 60 in advance below the lower surface of the substrate W so that the substrate W does not come into contact with the contact portion 60. While the rotation drive portion 13 rotates the substrate W together with the first suction portion 11, the contact portion 60 does not restrict the positional displacement of the substrate W.

[0068] 17, after the second lifting section 25 raises the contact section 60, the first suction section 11 releases the suction of the substrate W. The contact section 60 can restrict the position of the substrate W from being shifted due to an impact when the suction is released or due to deformation of the substrate W associated with the release of the suction. At this time, the second suction section 12 forms a gap with the lower surface of the substrate W without contacting the lower surface of the substrate W, in order to prevent contamination of the second region A2 that has already been cleaned.

[0069] 18, the first lifting unit 14 lifts the substrate W from the first suction unit 11. The contact unit 60 can restrict the position of the substrate W from being shifted due to vibrations caused when the substrate W is lifted together with the multiple lifting pins. At this time, the second suction unit 12 forms a gap with the lower surface of the substrate W without contacting the lower surface of the substrate W to prevent contamination of the second region A2 that has already been cleaned.

[0070] It should be noted that while the first lifting section 14 is lifting the substrate W relative to the first suction section 11, the second lifting section 25 or the third lifting section already described may lift the contact section 60 relative to the first suction section 11. The lifting speed of the contact section 60 is set to the same speed as the lifting speed of the substrate W. During the lifting of the substrate W, the positional deviation of the substrate W can be constantly limited.

[0071] Although the embodiments of the substrate processing apparatus and substrate processing method according to the present disclosure have been described above, the present disclosure is not limited to the above-mentioned embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. These naturally fall within the technical scope of the present disclosure. [Explanation of symbols]

[0072] 124 Substrate Processing Equipment 190 Control device 11 1st suction part 12 Second suction part 50 Friction body A1 1st area A2 2nd area W substrate

Claims

1. 1. A substrate processing apparatus comprising: a first suction unit that suctions a first region of an underside of a substrate; a second suction unit that suctions a second region of the underside of the substrate; and a friction body that rubs the first region of the underside of the substrate while the second suction unit is suctioning the substrate, and rubs the second region of the underside of the substrate while the first suction unit is suctioning the substrate, the second region is a region on the outer side of the substrate in a radial direction than the first region, The substrate processing apparatus includes a contact portion provided on the second suction portion, the contact portion contacting a peripheral edge of the substrate to limit positional deviation of the substrate.

2. a cup surrounding the periphery of the substrate and receiving the processing liquid supplied to the substrate; The substrate processing apparatus according to claim 1 , wherein the second suction portion and the contact portion are connected to the cup and are movable together with the cup.

3. the first region includes a center of the lower surface of the substrate, and the second region is provided as a pair on either side of the center of the lower surface of the substrate; The second suction portions are provided in pairs, The substrate processing apparatus according to claim 1 , wherein one or more of the contact portions are provided on each of the pair of second suction portions, and three or more contact portions are provided in total.

4. The substrate processing apparatus according to claim 1 , wherein the contact portion protrudes above an upper surface of the substrate when the second suction portion suctions the substrate.

5. The substrate processing apparatus according to claim 1 , wherein the contact portion has a vertical surface that contacts a peripheral edge of the substrate.

6. a first lifting unit that contacts a lower surface of the substrate to lift and lower the substrate; The substrate processing apparatus according to claim 1 , wherein the contact portion limits a positional deviation of the substrate when the first lifting portion lowers the substrate to the second suction portion.

7. The substrate processing apparatus according to claim 6 , wherein the contact portion limits a positional deviation of the substrate when the second suction portion receives the substrate from the first lifting portion and starts suction of the substrate.

8. The substrate processing apparatus according to claim 1 , wherein the contact portion limits a positional deviation of the substrate while the friction body rubs the lower surface of the substrate in a state in which the second suction portion suctions the substrate.

9. a second lifting unit that lifts and lowers the contact unit together with the second suction unit, The substrate processing apparatus according to claim 1 , wherein the contact portion limits a positional deviation of the substrate when the second lifting portion lowers the substrate together with the second suction portion.

10. The substrate processing apparatus of claim 9 , wherein the first suction portion and the second suction portion do not suction the substrate while the second lifting portion lowers the substrate together with the second suction portion.

11. The substrate processing apparatus according to claim 10 , wherein the contact portion limits a positional deviation of the substrate when the first suction portion receives the substrate from the second suction portion and starts suction of the substrate.

12. a second lifting unit that lifts and lowers the contact unit together with the second suction unit, 3 . The substrate processing apparatus according to claim 1 , wherein when the first suction portion releases the suction of the substrate, the abutment portion restricts positional deviation of the substrate without causing the second suction portion to come into contact with a lower surface of the substrate.

13. a first lifting unit that contacts a lower surface of the substrate to lift and lower the substrate; The substrate processing apparatus according to claim 12 , wherein when the first lifting section lifts the substrate from the first suction section, the abutment section limits misalignment of the substrate without the second suction section contacting a lower surface of the substrate.

14. 3 . The substrate processing apparatus according to claim 1 , further comprising a cleaning unit that cleans the upper surface of the substrate when the friction body rubs the second region of the lower surface of the substrate with the first suction unit sucking the substrate.

15. A substrate processing method for processing a substrate using the substrate processing apparatus according to claim 1 or 2, comprising the steps of: The substrate processing method further comprises limiting positional deviation of the substrate by the abutment portion abutting against a peripheral edge of the substrate.

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