Laser annealing equipment, laser annealing method, laser annealing program

Abstract

To provide laser annealing equipment, etc. that can appropriately correct control input values specified by recipes, etc.SOLUTION: Laser annealing equipment 1 comprises a correction value setting unit 62 that can set different correction values for a plurality of control input values CI of the control parameters, in a laser control unit 51 that controls the laser pulse LP with which a semiconductor wafer 3 is irradiated from a laser device 2 for the annealing process based on control parameters, and a control input unit 61 inputs the corrected control input value ACI, which is the control input value CI corrected by the corresponding correction value, to the laser device 2, when any of a plurality of control input values CI is specified for controlling the laser pulse LP. The control parameter is the energy density of the laser pulse LP.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a laser annealing apparatus and the like. [Background technology]

[0002] Patent Document 1 discloses a laser annealing device that irradiates a laser onto a workpiece such as a semiconductor wafer to perform an annealing process. The laser is controlled based on various control parameters such as energy density. Specific values ​​of the laser control parameters (hereinafter also referred to as control input values) used in the actual annealing process are generally specified in a document called a recipe that defines the processing conditions and processing procedures of the laser annealing device. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2018-67642 A Summary of the Invention [Problem to be solved by the invention]

[0004] When using multiple identical laser annealing devices (e.g., the same model number), the same processing results should be obtained if the recipe is the same. However, if there are individual differences in the laser annealing devices, different processing results may be obtained even if the recipe is the same.

[0005] The present disclosure has been made in consideration of these circumstances, and has an object to provide a laser annealing apparatus and the like that can appropriately correct control input values ​​specified by a recipe or the like. [Means for solving the problem]

[0006] In order to solve the above problems, a laser annealing device according to one aspect of the present disclosure includes a laser control unit that controls a laser irradiated from the laser device to a workpiece for annealing processing based on control parameters, the laser control unit including a correction value setting unit capable of setting different correction values ​​for multiple control input values ​​of the control parameters, and a control input unit that, when any of the multiple control input values ​​is designated for controlling the laser, inputs a corrected control input value obtained by correcting the control input value with the corresponding correction value to the laser device.

[0007] According to this aspect, correction values ​​that may differ are set for a plurality of control input values ​​that may be specified by a recipe, etc. In this manner, each control input value can be appropriately corrected by the correction value that is finely set for each control input value.

[0008] Another aspect of the present disclosure is a laser annealing method, which executes the following steps: for a control parameter for controlling a laser irradiated to a workpiece for annealing processing, setting correction values ​​that may differ for a plurality of control input values; and, when any of the plurality of control input values ​​is designated for controlling the laser, inputting a corrected control input value obtained by correcting the control input value by the corresponding correction value for controlling the laser.

[0009] Any combination of the above components, or any conversion of these components into a method, device, system, recording medium, computer program, or the like, is also encompassed by the present disclosure. Effect of the Invention

[0010] According to the present disclosure, control input values ​​specified by a recipe or the like can be appropriately corrected. [Brief description of the drawings]

[0011] [Figure 1] 1 illustrates a schematic configuration of a laser annealing apparatus. [Diagram 2] FIG. 4 is a schematic functional block diagram of a laser control unit. [Diagram 3]13 shows a specific example of a control input value of the energy density before the correction value is set by the correction value setting unit. [Figure 4] Specific examples of the control input value and the corrected control input value of the energy density after the correction value is set by the correction value setting unit will be shown. [Diagram 5] 5 is a graph in which the control input values ​​of the energy density shown in the first column of FIG. 4 are plotted on the horizontal axis, and the correction values ​​shown in the second column of FIG. 4 are plotted on the vertical axis. [Figure 6] 13A and 13B are schematic diagrams illustrating an example of assistance for manual setting by a correction value generating unit. [Figure 7] Another example is shown in FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012] In the following, a form for carrying out the present disclosure (hereinafter also referred to as an embodiment) will be described in detail with reference to the drawings. In the description and / or drawings, identical or equivalent components, members, processes, etc. will be given the same reference numerals, and duplicated descriptions will be omitted. The scale and shape of each part shown in the drawings are set for convenience in order to simplify the description, and are not to be interpreted as being limiting unless otherwise specified. The embodiment is an example, and does not limit the scope of the present disclosure in any way. All features and their combinations presented in the embodiment are not necessarily essential to the present disclosure. The embodiment is presented for convenience, decomposed into components for each function and / or each functional group that realizes it. However, one component in the embodiment may actually be realized by a combination of multiple components as separate entities, and multiple components in the embodiment may actually be realized by one component as an integrated entity.

[0013] 1 is a schematic diagram showing the configuration of a laser annealing apparatus 1 according to an embodiment of the present disclosure. The laser annealing apparatus 1 is an apparatus that performs an annealing process (heating process) by irradiating a laser (e.g., a laser pulse LP) oscillated by a laser device 2 to a semiconductor wafer 3 (placed on a wafer table 31 fixed to a stage device 4 described later) as an object to be processed. The laser annealing apparatus 1 in the illustrated example is significantly simplified from an actual one, and many components that are not mentioned in the description of this embodiment (e.g., components for measuring the laser and the semiconductor wafer 3, components for transporting the semiconductor wafer 3, and components for stopping the laser irradiation in an emergency) are omitted.

[0014] In addition, the illustrated configuration is merely an example, and the present disclosure may be applied to a laser annealing device of any other configuration. For example, in the illustrated example, the control system is composed of a laser control unit 51, a trigger pulse control unit 52, a personal computer (PC) 53, a scanner control unit 54, a stage control unit 55, etc., but as long as the laser annealing device 1 and the laser device 2 can appropriately perform an annealing process on the semiconductor wafer 3, a control system of any other configuration may be provided. In the illustrated example, an energy adjustment mechanism 11, a transmission optical system 12, a mask 13, an irradiation optical system 14, a galvano scanner 15, an fθ lens 16, etc. are provided along the laser path, but as long as the laser from the laser device 2 is appropriately irradiated on the semiconductor wafer 3, any other components may be provided between the laser device 2 and the semiconductor wafer 3, and the arrangement of these components is also arbitrary.

[0015] In the following, directions related to the configuration and / or operation of the laser annealing apparatus 1 will be described based on a three-dimensional orthogonal coordinate system with mutually orthogonal XYZ axes as coordinate axes. In the following, for convenience, it is assumed that the X and Y directions are horizontal directions (i.e., the XY plane is a horizontal plane) and the Z direction is a vertical direction. As will be described later, the semiconductor wafer 3 is driven relatively to the laser from the laser apparatus 2 within the XY plane under the control of the scanner control unit 54 and / or the stage control unit 55.

[0016] For example, the semiconductor wafer 3 is driven in the X direction together with the moving table 41 in the stage device 4 driven in the X direction by the stage control unit 55 (the X direction in this case is also referred to as the driving direction), and the laser from the laser device 2 is scanned in the Y direction by the galvano scanner 15 controlled by the scanner control unit 54 (the Y direction in this case is also referred to as the scanning direction). The semiconductor wafer 3 is driven in the Z direction together with the lift table 42 in the stage device 4 driven in the Z direction by the stage control unit 55 (the Z direction in this case is also referred to as the lift direction). This Z direction is also the incident direction in which the laser is incident on the semiconductor wafer 3. Hereinafter, for convenience, the X direction is also referred to as the vertical direction, the Y direction is also referred to as the horizontal direction, and the Z direction is also referred to as the height direction.

[0017] The laser device 2 is a pulse laser device that oscillates a laser pulse LP at a frequency of, for example, 100 kHz or more under the control of the laser control unit 51. In order to fully obtain the action and effect of the laser annealing device 1 according to this embodiment, the frequency of the laser pulse LP oscillated by the laser device 2 is, for example, between 100 kHz and 10 MHz, preferably between 500 kHz and 5 MHz, and more preferably between 700 kHz and 3 MHz. In the example of this embodiment, unless otherwise specified, the frequency of the laser pulse LP oscillated by the laser device 2 is 1 MHz. The laser device 2 according to this embodiment may be configured, for example, by a fiber laser device that oscillates a laser pulse LP by an optical fiber.

[0018] A laser pulse LP is emitted, for example, in the X direction from a laser device 2. In a laser annealing device 1 that guides this laser pulse LP to a semiconductor wafer 3 that is an irradiation target (workpiece), an energy adjustment mechanism 11, a transmission optical system 12, a mask 13, an irradiation optical system 14, a galvano scanner 15, and an fθ lens 16 are provided in this order along a path of the laser pulse LP (schematically shown by a dashed dotted line).

[0019] The energy adjustment mechanism 11 adjusts the energy and energy density of the laser pulse LP emitted from the laser device 2 to values ​​suitable for the intended annealing process. As will be described later, in this embodiment, the energy density of the laser pulse LP is corrected as a control parameter. At least a part of this correction may be reflected by the energy adjustment mechanism 11 in addition to or instead of the laser device 2.

[0020] The transmission optical system 12 is an optical system that transmits the laser pulse LP. The transmission optical system 12 is composed of any optical elements such as lenses, mirrors, prisms, filters, and diffraction gratings, and may be responsible not only for transmitting the laser pulse LP, but also for adjusting the size (diameter) of the laser pulse LP, shaping the laser pulse LP, and adjusting the intensity distribution of the laser pulse LP. The adjustment of the size (diameter) of the laser pulse LP and the shaping of the laser pulse LP may be performed by a mask 13 having a size (diameter) and / or shape suitable for the intended annealing process. The irradiation optical system 14 is composed of any optical elements such as lenses, mirrors, prisms, filters, and diffraction gratings, and adjusts the laser pulse LP to a mode (e.g., size (diameter), shape, intensity distribution) suitable for irradiation of the semiconductor wafer 3.

[0021] The galvanometer scanner 15 is a laser scanning unit that scans the laser pulse LP adjusted by the irradiation optical system 14 and the like along the Y direction. The galvanometer scanner 15 includes a galvanometer mirror 151 as a drivable optical element that reflects the incident laser pulse LP and directs it to a desired scanning position in the Y direction, and a motor (not shown) that drives the galvanometer mirror 151 to a desired attitude or angle. The attitude or angle of the galvanometer mirror 151 is adjusted by the motor, so that the laser pulse LP incident on the galvanometer mirror 151 is reflected to a desired position in the Y direction.

[0022] The laser scanning unit that directs the incident laser pulse LP to a desired scanning position in the Y direction is not limited to the galvano scanner 15, but may be configured with optical elements such as a polygon mirror scanner having a rotatable polygon mirror (optical element) or a drivable MEMS (Micro Electro Mechanical Systems) mirror. The scanning direction of the laser pulse LP by the laser scanning unit such as the galvano scanner 15 is also not limited to the Y direction, but may be a direction intersecting the Y direction such as the X direction, or may be two directions, the X direction and the Y direction. As in the latter case, when the laser scanning unit such as the galvano scanner 15 can scan the laser pulse LP over the XY plane, i.e., the surface of the semiconductor wafer 3, it is not necessary to provide a stage device 4 (moving table 41) that drives the semiconductor wafer 3 and the wafer table 31 in the X direction or the like. In this case, the galvano scanner 15 and the like configure a laser scanning unit in two directions, the X direction and the Y direction.

[0023] The fθ lens 16 focuses the laser pulse LP scanned in the Y direction by the galvano scanner 15 on the semiconductor wafer 3 to be annealed. The laser pulse LP from the fθ lens 16 is incident on the semiconductor wafer 3 in the Z direction. The laser pulse LP focused on the semiconductor wafer 3 by the fθ lens 16 in this way moves in the Y direction on the surface of the semiconductor wafer 3 by scanning in the Y direction by the galvano scanner 15. The size of the laser pulse LP focused on the semiconductor wafer 3 can be designed arbitrarily, but is preferably between 0.10 mm square and 0.15 mm square, for example, and more preferably between 0.12 mm square and 0.13 mm square. In addition, the scanning speed of the laser pulse LP in the Y direction on the surface of the semiconductor wafer 3 (and / or the driving speed of the semiconductor wafer 3 in the X direction by the stage device 4 (moving table 41)) can also be designed arbitrarily, but is preferably between 100 cm / s and 500 cm / s, for example, and more preferably between 250 cm / s and 350 cm / s.

[0024] The moving table 41 in the stage device 4 is a driving device that drives the semiconductor wafer 3 and the wafer table 31 relative to the laser pulse LP in the X direction. The moving table 41 moves the laser pulse LP relatively in the X direction on the surface of the semiconductor wafer 3.

[0025] As described above, by combining scanning of the laser pulse LP in the Y direction by the galvano scanner 15 as a Y direction laser scanning unit and driving of the semiconductor wafer 3 in the X direction by the moving table 41 as an X direction laser scanning unit, the laser pulse LP can be scanned over the XY plane, i.e., the surface of the semiconductor wafer 3. The driving direction of the semiconductor wafer 3 by the moving table 41 is not limited to the X direction, but may be a direction intersecting the X direction such as the Y direction, or may be two directions, the X direction and the Y direction. As in the latter case, when the moving table 41 can drive the semiconductor wafer 3 relatively to the laser pulse LP over the XY plane, the galvano scanner 15 for scanning the laser pulse LP in the Y direction or the like may not be provided. In this case, the moving table 41 constitutes a laser scanning unit in two directions, the X direction and the Y direction.

[0026] The laser annealing apparatus 1 and the laser apparatus 2 as described above are controlled by a control system including a laser control unit 51, a trigger pulse control unit 52, a personal computer 53, a scanner control unit 54, and a stage control unit 55.

[0027] The laser control unit 51 controls the laser pulse LP oscillated by the laser device 2 based on various control parameters. Examples of the control parameters include the energy of the laser pulse LP, the energy density of the laser pulse LP, the repetition frequency of the laser pulse LP, the duration (pulse width) of the laser pulse LP, the peak intensity of the laser pulse LP, the profile (e.g., intensity distribution) of the laser pulse LP, the delay time (time difference) when the laser pulse LP is irradiated to the same place by a plurality of laser devices 2 (not shown), and the overlap rate (the rate at which the irradiation marks overlap) between adjacent rows (or adjacent columns) when the laser pulse LP is scanned back and forth. In the following, the energy density of the laser pulse LP will be specifically described as a representative example of the control parameters. However, the following description is also applicable to any other control parameters used by the laser device 2.

[0028] The trigger pulse control unit 52 generates a trigger pulse synchronized with the laser pulse LP oscillated by the laser device 2, based on a synchronization signal provided from the laser control unit 51. For example, the frequency of the trigger pulse generated by the trigger pulse control unit 52 is 1 / N (N is any natural number) or N times the repetition frequency or oscillation frequency of the laser pulse LP.

[0029] The scanner control unit 54 controls the galvano scanner 15 (scanner control) based on the trigger pulse processed by the personal computer 53 as necessary. Similarly, the stage control unit 55 controls the moving table 41 in the stage device 4 (stage control) based on the trigger pulse processed by the personal computer 53 as necessary. In this way, based on the trigger pulse synchronized with the laser pulse LP, the scanner control unit 54 can appropriately execute Y-direction scanning of the laser pulse LP by the galvano scanner 15, and the stage control unit 55 can appropriately execute X-direction driving of the semiconductor wafer 3 by the moving table 41. The personal computer 53 may be used for adjustment in the laser control unit 51 described below.

[0030] FIG. 2 is a schematic functional block diagram of the laser control unit 51 according to the present embodiment. The laser control unit 51 includes a control input unit 61, a correction value setting unit 62, a correction value generating unit 63, an approximation equation generating unit 64, a correlation evaluating unit 65, and a range dividing unit 66. As long as the laser control unit 51 can achieve at least a part of the actions and / or effects described below, some of these functional blocks may be omitted. These functional blocks may be realized by the cooperation of hardware resources such as a central processing unit of a computer, a memory, an input device, an output device, and peripheral devices connected to the computer, and software executed using them. Regardless of the type of computer or the installation location, each of the above functional blocks may be realized by the hardware resources of a single computer, or may be realized by combining hardware resources distributed among multiple computers.

[0031] The control input unit 61 inputs a control input value designated for controlling the laser pulse LP to the laser apparatus 2. In the illustrated example, a recipe R that defines the processing conditions and processing procedures of the laser annealing apparatus 1 and / or the laser apparatus 2 designates specific control input values ​​of control parameters such as the energy density of the laser pulse LP. In a typical conventional laser control unit, the control input value CI designated by the recipe R is input directly to the laser apparatus 2. In contrast, in the laser control unit 51 according to this embodiment, the control input value CI designated by the recipe R is corrected to a corrected control input value ACI by a correction value setting unit 62 described below, and then input to the laser apparatus 2.

[0032] The correction value setting unit 62 can set different correction values ​​for a plurality of control input values ​​CI of control parameters such as the energy density of the laser pulse LP specified by the recipe R. When any of the plurality of control input values ​​CI is specified by the recipe R for controlling the laser pulse LP, the control input unit 61 inputs a corrected control input value ACI obtained by correcting the control input value CI by the corresponding correction value to the laser device 2. Note that, for convenience, in this embodiment, the control input unit 61 and the correction value setting unit 62 are described as separate functional blocks, but they may be realized as an integrated functional block.

[0033] 3 shows a specific example of the control input value CI of the energy density (corrected control input value ACI) before the correction value is set by the correction value setting unit 62. The first column shows a plurality of control input values ​​CI of the energy density specified by the recipe R. In this example, the control input value CI of the energy density specified by the recipe R is 0.1 J / cm 2 However, as will be described later, recipe R is 0.1 J / cm 2 The control input values ​​CI between the step control input values ​​CI may be specified for controlling the energy density of the laser pulse LP. In the illustrated example, the correction values ​​are all "0" because they have not yet been set. Therefore, the multiple correction control input values ​​ACI of the energy density shown in the third column are the same as the control input values ​​CI in the first column.

[0034] The correction values ​​shown in the second column may be manually set through the personal computer 53 that can be operated by a user such as an administrator of the laser annealing apparatus 1 and / or the laser apparatus 2. Specifically, the correction value setting unit 62 in the laser control unit 51 sets or writes the correction values ​​shown in the second column based on correction value setting information provided from the personal computer 53 in response to a user's operation.

[0035] When manually setting such correction values, a measuring device 7 may be used to measure various characteristics of the semiconductor wafer 3 and / or the laser pulse LP itself after the annealing process is actually performed by the laser pulse LP based on the control input value CI before correction and / or the corrected corrected control input value ACI after correction. The measurement results by such a measuring device 7 are provided to the personal computer 53 and are presented or displayed to the user through the monitor or the like. This allows the user to check, for example, in approximately real time, whether the corrected control input value ACI set by the user realizes the intended characteristics of the semiconductor wafer 3 and / or the laser pulse LP. If the corrected control input value ACI does not realize the intended characteristics of the semiconductor wafer 3 and / or the laser pulse LP, the user can operate the personal computer 53 to appropriately update the corrected control input value ACI.

[0036] Instead of the above-described manual setting via the user and the personal computer 53, the correction value setting unit 62 may autonomously (or automatically) set a correction value for each control input value CI based on the measurement results from the measurement device 7. Such a correction value setting unit 62 autonomously sets an appropriate correction value so that the desired characteristics (measured by the measurement device 7) of the semiconductor wafer 3 and / or the laser pulse LP are realized for each control input value CI.

[0037] The characteristics of the semiconductor wafer 3 (after annealing) and / or the laser pulse LP measured by the measuring device 7 are arbitrary, but examples include the sheet resistance of the semiconductor wafer 3, the control parameters themselves such as the energy density of the laser pulse LP, and the power, intensity distribution, profile, size (diameter), and shape of the laser pulse LP. The correction value setting unit 62 that automatically sets the correction value can set an optimal correction value for each control input value CI while comprehensively referring to these various measurement results.

[0038] 4 shows a specific example of the control input value CI and the corrected control input value ACI of the energy density after the correction values ​​are set by the correction value setting unit 62. As illustrated here, the correction value setting unit 62 can set different correction values ​​for a plurality of control input values ​​CI of the energy density specified by the recipe R. For example, a correction value of "0.0001" is set for the control input value "0.7" of the energy density specified by the recipe R, while a correction value of "0.0289" is set for the control input value "2.0" of the energy density specified by the recipe R.

[0039] Then, when any one of the multiple control input values ​​CI in the first column (for example, "1.5") is specified by the recipe R for controlling the laser pulse LP, the control input unit 61 inputs a corrected control input value ACI ("1.5032") obtained by correcting the control input value CI ("1.5") by the corresponding correction value ("0.0032") to the laser device 2. In other words, when the recipe R specifies "1.5" as the energy density, an energy density of "1.5032" is actually specified for the laser device 2.

[0040] Such a correction is mainly performed to reduce the influence of individual differences in the laser device 2. In the above example, in order for the laser device 2 to oscillate a laser pulse LP with an energy density of "1.5" specified by the recipe R, an energy density (corrected control input value ACI) of "1.5032" must actually be specified for the laser device 2. In other words, if an energy density (control input value CI) of "1.5" according to the recipe R is specified for the laser device 2, the laser pulse LP will not be oscillated with the desired energy density of "1.5".

[0041] According to this embodiment, as shown in Fig. 4, since the correction value can be individually and precisely set for each control input value CI specified by the recipe R, the influence of the individual difference of the laser annealing apparatus 1 and / or the laser apparatus 2 can be effectively reduced. For example, when a plurality of the same (e.g., same model number) laser annealing apparatuses 1 and / or laser apparatuses 2 are used, the above-mentioned precise correction can be individually performed for each apparatus (i.e., the correction value in the second column may be different for each apparatus), thereby realizing the laser pulse LP of the desired energy density as specified by the recipe R in each apparatus. Therefore, regardless of the individual difference of the laser annealing apparatus 1 and / or the laser apparatus 2, each apparatus can perform the desired annealing process according to the recipe R (i.e., the same process result can be obtained).

[0042] FIG. 5 is a graph in which the control input value CI of the energy density specified by the recipe R shown in the first column of FIG. 4 is plotted on the horizontal axis, and the correction value shown in the second column of FIG. 4 is plotted on the vertical axis. As in this example, the correction values ​​may be set by the correction value setting unit 62 (or the personal computer 53) so as to change non-linearly with respect to the control input values ​​CI (values ​​between 0.7 and 2.0 in increments of 0.1). Although not shown, in this case, the corrected control input values ​​ACI shown in the third column of FIG. 4 change non-linearly with respect to the control input values ​​CI shown in the first column. In other words, the correction value and the corrected control input value ACI can be freely set for each control input value CI. For this reason, the control input value CI can be precisely corrected in accordance with the characteristics (or individual differences) inherent to the laser annealing apparatus 1 and / or the laser apparatus 2.

[0043] In particular, since the energy density as a control parameter of the laser pulse LP significantly affects the activation of the semiconductor wafer 3 implanted with dopants, which is the main purpose of the annealing process, nonlinear or free-form correction as shown diagrammatically in FIG. 5 is extremely beneficial for improving the quality and stability of the annealing process.

[0044] 4, all of the correction values ​​shown in the second column were manually input via the personal computer 53. The correction value generating unit 63 may provide the personal computer 53 and / or the user with information to assist in such manual setting.

[0045] 6 is a schematic diagram showing an example of assistance for manual setting by the correction value generating unit 63. In this example, correction values ​​"0.0001", "0.0014", and "0.0289" are manually set for the control input values ​​"1.1", "1.4", and "2.0" of the energy density (first column) specified by the recipe R. In this manner, when at least three correction values ​​(second column) are set for at least three control input values ​​CI (first column), the correction value generating unit 63 generates other correction values ​​for other control input values ​​CI different from the at least three control input values ​​CI based on the at least three correction values.

[0046] In the illustrated example, the correction value generating unit 63 generates or calculates another correction value "0.0100" for another control input value "1.7" different from the three already-set control input values ​​"1.1", "1.4", and "2.0" based on the three already-set correction values ​​"0.0001", "0.0014", and "0.0289". As shown in FIG. 6, the correction value "0.0100" and / or the correction control input value "1.7100" proposed by the correction value generating unit 63 are presented or highlighted to the user via the monitor of the personal computer 53 or the like. If the proposed correction value and / or correction control input value is appropriate, the user performs an operation to adopt it as is on the personal computer 53 and sets it in the correction value setting unit 62, and if the proposed correction value and / or correction control input value is inappropriate, performs an operation such as correction on the personal computer 53.

[0047] In the example of Fig. 4, the correction value setting unit 62 sets non-linear (or linear) correction values ​​that may differ for a plurality of discrete control input values ​​CI in increments of 0.1. However, the recipe R may specify a control input value CI between the discrete control input values ​​CI for controlling the laser pulse LP. In such a case, the correction value set for the discrete control input value CI closest to the specified control input value CI may be used, but it is preferable to use an approximation equation generated by an approximation equation generating unit 64 described below.

[0048] The approximation formula generating unit 64 generates an approximation formula for calculating continuous correction values ​​for continuous control input values ​​based on a plurality of correction values ​​set for a plurality of discrete control input values ​​CI by the correction value setting unit 62 and / or the personal computer 53. FIG. 5 shows an example of an approximation formula generated by the approximation formula generating unit 64. This polynomial approximation formula "y = 0.0275x 3 - 0.0791x 2 + 0.0739x - 0.0224" (where x is the horizontal axis variable and y is the vertical axis variable) is generated by the approximation equation generating unit 64 based on the discrete correction values ​​(black dots in FIG. 5) set for the discrete control input values ​​CI in increments of 0.1 in the example of FIG. 4. In addition, in FIG. 5, this polynomial approximation equation is graphed as a dotted nonlinear curve.

[0049] When recipe R specifies an intermediate control input value between discrete control input values ​​CI in increments of 0.1 for controlling the energy density of the laser pulse LP, the correction value setting unit 62 sets an intermediate correction value for the intermediate control input value based on the polynomial approximation equation generated by the approximation equation generating unit 64. For example, when recipe R specifies an intermediate control input value "1.55" between two adjacent control input values ​​"1.5" and "1.6", the correction value setting unit 62 sets the intermediate control input value "1.55" based on the polynomial approximation equation "y = 0.0275x 3 - 0.0791x 2+ 0.0739x - 0.0224" to calculate the intermediate correction value "y = 0.0045." This intermediate correction value "0.0045" is between the correction value "0.0032" corresponding to one adjacent control input value "1.5" and the correction value "0.0060" corresponding to the other adjacent control input value "1.6."

[0050] As described above, the control input unit 61 inputs a corrected control input value (e.g., 1.5545) obtained by correcting the intermediate control input value (e.g., 1.55) designated for controlling the laser pulse LP by the intermediate correction value (e.g., 0.0045) calculated from the approximation equation generated by the approximation equation generating unit 64 to the laser device 2. In other words, the control input unit 61 inputs an intermediate control input value (e.g., 1.5545) corrected by the intermediate correction value (e.g., 0.0045) between one correction value (e.g., 0.0032) corresponding to one adjacent control input value (e.g., 1.5) and the other correction value (e.g., 0.0060) corresponding to the other control input value (e.g., 1.6) to the laser device 2 as a corrected control input value.

[0051] The correlation evaluation unit 65 evaluates the correlation between the multiple correction values ​​set by the correction value setting unit 62 for the multiple discrete control input values ​​CI and the approximation equation generated by the approximation equation generation unit 64. In the example of Fig. 5, the correlation evaluation unit 65 calculates a correlation coefficient R 2 Calculate the correlation coefficient R 2 The closer to "1" the correlation is, the stronger the correlation is, and the closer to "0" the correlation is, the weaker the correlation is.

[0052] If the correlation evaluated by the correlation evaluation unit 65 is below a predetermined standard, the range division unit 66 divides the range of the control input value CI for which the approximation equation is generated by the approximation equation generation unit 64 into multiple small ranges. 2If the correlation coefficient R calculated by the correlation evaluation unit 65 is less than the predetermined reference value "0.9", the range division process is executed. 2 is "0.9996", which is greater than or equal to the reference value "0.9", so the range dividing unit 66 does not execute the range dividing process.

[0053] On the other hand, in another example shown in FIG. 7, the correlation between the multiple discrete correction values ​​(black dots in FIG. 7) set by the correction value setting unit 62 for multiple discrete control input values ​​CI at intervals of 0.1, which are calculated by the correlation evaluation unit 65, and the polynomial approximation formula “y = 0.0017x 6 - 0.0117x 5 + 0.0309x 4 - 0.0376x 3 + 0.0193x 2 - 0.0023x + 0.0003" (dotted line in Figure 7) 2 is "0.653" which is below the reference value "0.9", the range dividing unit 66 executes range dividing processing. As shown typically in Fig. 7, the range dividing unit 66 divides the range of the control input values ​​CI for which the approximation equation generating unit 64 generates an approximation equation into, for example, a first small range equal to or less than "0.95" and a second small range equal to or more than "0.95", taking into consideration the distribution, arrangement, continuity, etc. of the discrete correction values. Note that the position of division by the range dividing unit 66 may be specified by the user via the personal computer 53.

[0054] The approximate formula generation unit 64 generates an approximate formula for each small range divided by the range division unit 66. The above-described range division process by the range division unit 66 is repeated until the approximate formulas generated by the approximate formula generation unit 64 fall below the reference value "0.9" for all small ranges.

[0055] The present disclosure has been described above based on the embodiments. Various modifications are possible to the combinations of the components and processes in the exemplary embodiments, and it will be obvious to those skilled in the art that such modifications are included within the scope of the present disclosure.

[0056] The configuration, action, and function of each device and method described in the embodiments can be realized by hardware resources or software resources, or by the cooperation of hardware resources and software resources. For example, a processor, ROM, RAM, and various integrated circuits can be used as hardware resources. For example, programs such as an operating system and applications can be used as software resources. [Explanation of symbols]

[0057] 1 laser annealing device, 2 laser device, 3 semiconductor wafer, 4 stage device, 7 measuring device, 15 galvanometer scanner, 41 moving table, 51 laser control unit, 53 personal computer, 61 control input unit, 62 correction value setting unit, 63 correction value generation unit, 64 approximation equation generation unit, 65 correlation evaluation unit, 66 range division unit, LP laser pulse.

Claims

1. A laser control unit controls a laser beam irradiated from a laser device to a workpiece for annealing based on a control parameter, a correction value setting unit capable of setting different correction values ​​for a plurality of control input values ​​of the control parameter; a control input unit that, when any of the plurality of control input values ​​is designated for controlling a laser, inputs a corrected control input value obtained by correcting the control input value by the corresponding correction value to the laser device; A laser annealing apparatus comprising:

2. the correction value setting unit is capable of setting different correction values ​​for the plurality of discrete control input values, When an intermediate control input value between two adjacent control input values ​​is designated for controlling a laser, the control input unit inputs the intermediate control input value corrected by an intermediate correction value between one of the correction values ​​corresponding to one of the control input values ​​and the other correction value corresponding to the other of the control input values ​​as the corrected control input value to the laser device.

2. The laser annealing apparatus according to claim 1.

3. an approximation equation generating unit that generates an approximation equation for calculating continuous correction values ​​for continuous control input values, based on a plurality of correction values ​​set for the plurality of discrete control input values ​​by the correction value setting unit; The control input unit inputs to the laser device the corrected control input value obtained by correcting the control input value designated for controlling the laser by the correction value calculated from the approximation formula.

3. The laser annealing apparatus according to claim 2.

4. a correlation evaluation unit that evaluates a correlation between the plurality of correction values ​​set by the correction value setting unit for the plurality of discrete control input values ​​and the approximation formula; a range division unit that divides the range of the control input value for which the approximation equation is generated by the approximation equation generation unit into a plurality of small ranges when the correlation evaluated by the correlation evaluation unit is below a predetermined standard; Equipped with the approximation formula generating unit generates the approximation formula for each of the small ranges divided by the range dividing unit.

4. The laser annealing apparatus according to claim 3.

5. 5. The laser annealing apparatus according to claim 1, wherein the plurality of correction control input values ​​vary non-linearly with respect to the plurality of control input values.

6. 5. The laser annealing apparatus according to claim 1, further comprising a correction value generating unit that generates another correction value for another control input value different from the at least three control input values ​​based on the at least three correction values ​​when the correction value setting unit sets at least three correction values ​​for the at least three control input values.

7. 5. The laser annealing apparatus according to claim 1, wherein the control parameter is a laser energy density.

8. Setting correction values, which may be different, for a plurality of control input values ​​for a control parameter for controlling a laser irradiated onto a workpiece for annealing; When any of the plurality of control input values ​​is designated for controlling a laser, inputting a corrected control input value obtained by correcting the control input value by the corresponding correction value for controlling the laser; The laser annealing method includes:

9. Setting correction values, which may be different, for a plurality of control input values ​​for a control parameter for controlling a laser irradiated onto a workpiece for annealing; When any of the plurality of control input values ​​is designated for controlling a laser, inputting a corrected control input value obtained by correcting the control input value by the corresponding correction value for controlling the laser; A laser annealing program that causes a computer to execute the above.

Images