Semiconductor manufacturing apparatus and method for manufacturing semiconductor device

Abstract

To provide a technology capable of suppressing bouncing and adhesion of a broken piece of a semiconductor wafer to a surface of a semiconductor device when picking up an individualized semiconductor device from the semiconductor wafer.SOLUTION: A semiconductor manufacturing apparatus includes: a sheet holding part which holds a sheet 10 having a base material 11 and an adhesive layer 12 which is provided on a surface of the base material 11 and to which a semiconductor wafer 1 is attached; and an adhesive strength lowering part which is arranged to act on the sheet 10 held by the sheet holding part and which reduces adhesive strength of a predetermined area in the adhesive layer 12 of the sheet 10. The predetermined area in the adhesive layer 12 is an area to which a broken piece 3 of a semiconductor wafer not functioning as a semiconductor device 2 is attached.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present disclosure relates to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device. [Background technology]

[0002] In conventional semiconductor manufacturing equipment, ultraviolet light is irradiated onto the underside of a semiconductor device that has been completely cut onto a sheet whose adhesive strength is reduced by ultraviolet light, and the semiconductor device is peeled off from the sheet piece by piece by the up and down movement of a push-up rod and a suction collet, and picked up (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 3-206643 Summary of the Invention [Problem to be solved by the invention]

[0004] Near the periphery of the semiconductor wafer, a number of small semiconductor wafer fragments that do not become rectangular semiconductor devices are inevitably generated. These semiconductor wafer fragments cannot be used as semiconductor devices, and after the semiconductor device is picked up from the semiconductor wafer, the semiconductor wafer fragments are disposed of as waste together with the sheet. The size of the semiconductor wafer fragments varies depending on the size of the semiconductor device that is formed. Therefore, as semiconductor devices have become smaller in recent years, the semiconductor wafer fragments have also become smaller.

[0005] In the conventional technology, when picking up individual semiconductor devices cut from a semiconductor wafer, pieces of the semiconductor wafer attached to the sheet fly off, and as a result, the pieces of the semiconductor wafer may adhere to the surface of the semiconductor device, causing defects in the semiconductor device.

[0006] Therefore, an object of the present disclosure is to provide a technology that can prevent pieces of a semiconductor wafer from jumping around and adhering to the surface of a semiconductor device when picking up individual semiconductor devices from a semiconductor wafer. [Means for solving the problem]

[0007] The semiconductor manufacturing apparatus of the present disclosure is a semiconductor manufacturing apparatus that manufactures a plurality of semiconductor devices obtained by dicing a semiconductor wafer, and includes a sheet holding section that holds a sheet having a base material and an adhesive layer provided on a first main surface of the base material to which the semiconductor wafer is attached, and an adhesive strength reducing section that is arranged to be able to act on the sheet held in the sheet holding section and reduces the adhesive strength of a predetermined area of ​​the adhesive layer of the sheet, wherein the predetermined area of ​​the adhesive layer is an area to which a piece of the semiconductor wafer that does not function as the semiconductor device is attached. Effect of the Invention

[0008] According to the present disclosure, it is possible to remove the chips of the semiconductor wafer before picking up the semiconductor device singulated from the semiconductor wafer, thereby preventing the chips of the semiconductor wafer from jumping and adhering to the surface of the semiconductor device when picking up the semiconductor device singulated from the semiconductor wafer. [Brief description of the drawings]

[0009] [Figure 1] 1 is a top view of a semiconductor wafer set in the semiconductor manufacturing apparatus according to the first embodiment. [Diagram 2] 4 is a side view showing a configuration related to a decrease in adhesive strength in the semiconductor manufacturing apparatus according to the first embodiment. FIG. [Diagram 3] 2 is a side view showing an example of a configuration for removing chips of a semiconductor wafer in the semiconductor manufacturing apparatus according to the first embodiment. FIG. [Figure 4] 11 is a side view showing another example of the configuration for removing chips of a semiconductor wafer in the semiconductor manufacturing apparatus according to the first embodiment. FIG. [Diagram 5]11 is a side view showing another example of the configuration for removing chips of a semiconductor wafer in the semiconductor manufacturing apparatus according to the first embodiment. FIG. [Figure 6] 11 is a side view showing another example of the configuration for removing chips of a semiconductor wafer in the semiconductor manufacturing apparatus according to the first embodiment. FIG. [Figure 7] 2 is a flowchart of a semiconductor manufacturing method according to the first embodiment. [Figure 8] 11 is a side view showing a configuration related to a decrease in adhesive strength in a semiconductor manufacturing apparatus according to a second embodiment. FIG. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] <Embodiment 1> <Configuration of semiconductor manufacturing equipment> The first embodiment will be described below with reference to the drawings. Fig. 1 is a top view of a semiconductor wafer 1 set in a semiconductor manufacturing apparatus according to the first embodiment. Fig. 2 is a side view showing a configuration related to a reduction in adhesive strength in the semiconductor manufacturing apparatus according to the first embodiment.

[0011] First, a semiconductor wafer 1 set in a semiconductor manufacturing device will be described. As shown in Fig. 1, the semiconductor wafer 1 is formed in a disk shape. A plurality of semiconductor devices 2 are formed on the semiconductor wafer 1 through processes such as coating, patterning, exposure, and etching. After that, the semiconductor wafer 1 is diced into individual pieces, so that the plurality of semiconductor devices 2 can be processed into a shape that can be removed from the semiconductor wafer 1.

[0012] At that time, a number of small semiconductor wafer fragments 3 that do not become rectangular semiconductor devices 2 are inevitably generated near the peripheral edge of the semiconductor wafer 1. The semiconductor wafer fragments 3 do not function as semiconductor devices 2 and therefore cannot be used. Therefore, the semiconductor wafer fragments 3 are disposed of as waste.

[0013] Next, a description will be given of a semiconductor manufacturing apparatus according to the embodiment 1. As shown in Fig. 2, the semiconductor manufacturing apparatus includes a frame fixing unit 20 (corresponding to a sheet holding unit), a scanning type energy irradiation device 32 (corresponding to an adhesion strength reducing unit), and a rotating unit 40.

[0014] The frame fixing unit 20 includes a frame support member 21 arranged on the base material 11 side of the sheet 10 and supporting the sheet 10 from the base material 11 side, and a frame pressing member 22 arranged on the adhesive layer 12 side of the sheet 10 and pressing the sheet 10 from the adhesive layer 12 side, and the frame support member 21 and the frame pressing member 22 hold the sheet 10.

[0015] The sheet 10 has a base material 11 and an adhesive layer 12 provided on a surface (corresponding to a first main surface) of the base material 11, to which the semiconductor wafer 1 is attached. The sheet 10 is formed into a disk shape to match the shape of the semiconductor wafer 1, and has a contour in a top view that is larger than the contour of the semiconductor wafer 1 in a top view. A plurality of semiconductor devices 2 that have been separated by dicing from the semiconductor wafer 1 and a piece 3 of the semiconductor wafer are attached to the adhesive layer 12 of the sheet 10.

[0016] The frame fixing unit 20 fixes and supports the dicing frame 4 attached to the peripheral portion of the semiconductor wafer 1. Specifically, a frame support member 21 supports all or part of the peripheral portion of the base material 11 of the sheet 10, and a frame pressing member 22 presses all or part of the dicing frame 4 toward the frame support member 21 side, thereby fixing the sheet 10 with the semiconductor wafer 1 attached in a stretched state without slack.

[0017] A rotating unit 40 is provided inside or outside the frame fixing unit 20 to rotate the frame fixing unit 20 so as to reverse the vertical positional relationship between the frame support member 21 and the frame pressing member 22 of the frame fixing unit 20. The rotating unit 40 is composed of, for example, a motor and gears.

[0018] The adhesive layer 12 of the sheet uses an adhesive whose adhesive strength is reduced by energy. Here, the energy for reducing the adhesive strength is any of light including ultraviolet (UV) rays, heating, cooling, and radiation.

[0019] 2, the energy application device 32 is disposed so as to be able to act on the sheet 10 held by the frame fixing unit 20. Specifically, the energy application device 32 is disposed below the substrate 11 of the sheet 10. The energy application device 32 irradiates the sheet 10 with energy for reducing the adhesive strength while scanning the sheet 10.

[0020] The energy irradiation device 32 irradiates the area of ​​the sheet 10 (i.e., the adhesive layer 12) where the semiconductor wafer chip 3 existing near the peripheral portion of the semiconductor wafer 1 is attached with energy for reducing the adhesive force, thereby reducing the adhesive force of the adhesive layer 12 of the sheet 10. Here, the energy irradiation area is preferably about 1 mm×1 mm to 20 mm×20 mm depending on the size of the semiconductor wafer chip 3. In addition, when the energy for reducing the adhesive force is heating, the temperature of the sheet 10 is preferably 60° C. to 200° C., and when the energy for reducing the adhesive force is cooling, the temperature of the sheet 10 is preferably −90° C. to −40° C. The area of ​​the adhesive layer 12 where the semiconductor wafer chip 3 is attached corresponds to the predetermined area for reducing the adhesive force.

[0021] The adhesive strength of the adhesive layer 12 of the sheet 10 to which the semiconductor wafer fragment 3 is attached is reduced, making it possible to remove the semiconductor wafer fragment 3 before picking up the semiconductor device 2 from the sheet 10. Therefore, when picking up the individualized semiconductor device 2, it is possible to prevent the semiconductor wafer fragment 3 from jumping and adhering to the surface of the semiconductor device 2. Furthermore, when removing the semiconductor wafer fragment 3, the adhesiveness of the adhesive layer 12 to the semiconductor device 2 is maintained, so that it is possible to prevent the semiconductor device 2 from peeling off from the sheet 10.

[0022] Next, a specific method for removing the semiconductor wafer fragments 3, which is performed after the adhesive strength of the adhesive layer 12 of the sheet 10 is reduced, will be described with reference to Figs. 3 to 6. Fig. 3 is a side view showing an example of a configuration for removing the semiconductor wafer fragments 3 in the semiconductor manufacturing apparatus according to the first embodiment. Note that the energy irradiation device 32 is not shown in Figs. 3 to 6.

[0023] 3, the rotating section 40 rotates the frame fixing unit 20 so that the vertical positional relationship between the frame support member 21 and the frame pressing member 22 of the frame fixing unit 20 is reversed compared to the configuration in FIG. 2, whereby the adhesive layer 12 of the sheet 10 is held facing downward. The semiconductor manufacturing apparatus further includes a push-down unit 23, which is disposed above the base material 11 of the sheet 10. Here, the adhesiveness of the adhesive layer 12 of the sheet 10 is maintained, so that the semiconductor device 2 does not peel off from the sheet 10.

[0024] When removing the semiconductor wafer fragment 3, either the push-down unit 23 or the sheet 10 is moved horizontally to position the push-down unit 23 above the semiconductor wafer fragment 3 to be removed.

[0025] Next, the push-down unit 23 is lowered so that the lower end of the push-down unit 23 comes into contact with the base material 11 of the sheet 10, and the semiconductor wafer piece 3 is pushed down through the sheet 10. The up and down movement of the push-down unit 23 can be performed by driving a motor or an air cylinder (not shown).

[0026] Since the chips 3 of the semiconductor wafer peeled off from the sheet 10 by the push-down unit 23 can be removed downward, it is possible to prevent the chips 3 of the semiconductor wafer from adhering to the surface of the semiconductor device 2 and causing defects.

[0027] FIG. 4 is a side view showing another example of the configuration for removing chips 3 of a semiconductor wafer in the semiconductor manufacturing apparatus according to the first embodiment.

[0028] As shown in Fig. 4, the semiconductor manufacturing apparatus further includes a push-up unit 24, a camera 25, an air gun 26, and a control unit 41 in addition to the configuration in Fig. 2. Also, similar to the configuration in Fig. 2, the frame fixing unit 20 holds the sheet 10 so that the base material 11 of the sheet 10 faces downward.

[0029] Camera 25 is disposed above and to the side of sheet 10 so as to be able to monitor the entire surface of sheet 10, and recognizes semiconductor wafer fragment 3. Air gun 26 is disposed above and to the side of sheet 10, and sprays air toward semiconductor wafer fragment 3. Control unit 41 controls camera 25 and air gun 26.

[0030] The push-up unit 24 is disposed below the base material 11 of the sheet 10. In this embodiment, the push-up unit 24 is disposed below the semiconductor wafer fragment 3 to be removed by moving either the push-up unit 24 or the sheet 10 in the horizontal direction.

[0031] Next, by raising the push-up unit 24, the upper end of the push-up unit 24 comes into contact with the base material 11 of the sheet 10, and the semiconductor wafer fragment 3 is pushed up through the sheet 10. The up and down movement of the push-up unit 24 can be performed by driving a motor or an air cylinder (not shown).

[0032] When the semiconductor wafer fragment 3 is peeled off from the adhesive layer 12 of the sheet 10 by the push-up unit 24, there is a high possibility that the semiconductor wafer fragment 3 will jump around. For this reason, when the camera 25 recognizes the semiconductor wafer fragment 3 peeled off from the adhesive layer 12 by the push-up unit 24, the control unit 41 controls the air gun 26 to eject air and remove the semiconductor wafer fragment 3 from above the adhesive layer 12. This makes it possible to prevent the semiconductor wafer fragment 3 from adhering to the surface of the semiconductor device 2. Here, the number of camera 25 and air gun 26 is not limited to one pair, and two or more pairs may be provided. The air ejected from the air gun 26 may be dry nitrogen in addition to dry air.

[0033] FIG. 5 is a side view showing another example of the configuration for removing chips 3 of a semiconductor wafer in the semiconductor manufacturing apparatus according to the first embodiment.

[0034] As shown in Fig. 5, the semiconductor manufacturing equipment further includes a tape attaching / detaching unit 42 in addition to the configuration in Fig. 2. The tape attaching / detaching unit 42 attaches a tape 27 having an adhesive strength lower than that of the adhesive layer 12 before the adhesive strength is reduced and higher than that of the adhesive layer 12 after the adhesive strength is reduced to the surface of the semiconductor wafer 1 opposite to the surface in contact with the adhesive layer 12, and then peels off the tape 27.

[0035] At this time, since the adhesive layer 12 maintains its adhesion to the semiconductor device 2, the semiconductor device 2 is not peeled off by the tape 27, and only the semiconductor wafer fragment 3 can be removed from the sheet 10. Therefore, when picking up the individual semiconductor device 2, it is possible to prevent the semiconductor wafer fragment 3 from jumping around and adhering to the surface of the semiconductor device 2.

[0036] FIG. 6 is a side view showing another example of the configuration for removing chips 3 of a semiconductor wafer in the semiconductor manufacturing apparatus according to the first embodiment.

[0037] As shown in Fig. 6, the semiconductor manufacturing apparatus further includes a tape holding section 43 and a push-up unit 24 in addition to the configuration in Fig. 2. The tape holding section 43 holds the tape 27, which has an adhesive strength lower than that of the adhesive layer 12 before the adhesive strength is reduced and higher than that of the adhesive layer 12 after the adhesive strength is reduced, above the semiconductor wafer 1 such that the adhesive surface of the tape 27 faces the surface of the semiconductor wafer 1 opposite to the surface that contacts the adhesive layer 12. The push-up unit 24 is disposed below the base material 11 of the sheet 10.

[0038] Next, the push-up unit 24 is raised so that the upper end of the push-up unit 24 comes into contact with the base material 11 of the sheet 10 , thereby pushing up the semiconductor wafer piece 3 through the sheet 10 .

[0039] If the push-up unit 24 has a function of irradiating energy to reduce the adhesive strength of the adhesive layer 12, the energy may be irradiated from the push-up unit 24 at this point. This allows the adhesive strength of the adhesive layer 12 of the sheet 10 to be reduced early, so that the chips 3 of the semiconductor wafer can be removed immediately in one step without irradiating energy in the previous step.

[0040] As the push-up unit 24 rises, the sheet 10 stretches, and the surface of the semiconductor wafer 1 opposite to the surface that contacts the adhesive layer 12 adheres to the tape 27 disposed above. At this time, since the adhesive strength of the tape 27 is stronger than that of the adhesive layer 12 after the adhesive strength has been reduced, the semiconductor wafer fragment 3 peels off from the adhesive layer 12 of the sheet 10 and is adhered to the tape 27. Since the semiconductor wafer fragment 3 can be removed from the sheet 10 by adhering it to the tape 27, the semiconductor wafer fragment 3 does not adhere to the surface of the semiconductor device 2.

[0041] In addition, since the adhesiveness of the adhesive layer 12 of the sheet 10 is maintained, the semiconductor device 2 is not peeled off by the tape 27. Furthermore, since the tape 27 does not come into contact with the semiconductor device 2, the adhesive surface of the tape 27 does not adhere to the surface of the semiconductor device 2. Therefore, the semiconductor device 2 in the required area is not peeled off from the adhesive layer 12 of the sheet 10. Thereafter, when picking up the individual semiconductor device 2, the semiconductor wafer fragment 3 has been removed from the adhesive layer 12 of the sheet 10, so it is possible to prevent the semiconductor wafer fragment 3 from jumping around and adhering to the surface of the semiconductor device 2.

[0042] After removing the semiconductor wafer fragment 3, the semiconductor device 2 is picked up from the sheet 10, and at this time, energy may be irradiated to the area of ​​the sheet 10 where the semiconductor device 2 is attached in order to reduce the adhesive strength. The irradiation of energy reduces the adhesive strength of the adhesive layer 12 of the sheet 10, making it easier to pick up the semiconductor device 2.

[0043] <Method of Manufacturing Semiconductor Device> Next, a method for manufacturing the semiconductor device 2 will be described with reference to the flowchart of Fig. 7. Fig. 7 is a flowchart of the semiconductor manufacturing method according to the first embodiment.

[0044] 7, first, in step S1, a semiconductor wafer 1 is formed. Specifically, a single crystal ingot is sliced ​​to obtain a disk-shaped semiconductor wafer 1. Here, the semiconductor wafer 1 includes a silicon wafer, or a compound semiconductor wafer such as silicon carbide, gallium arsenide, gallium phosphide, or gallium nitride.

[0045] In step S2, a plurality of electric circuits that will become the semiconductor device 2 are formed by performing known processes such as film formation, exposure, and etching.

[0046] In step S3, the back surface of the semiconductor wafer 1 is attached to the adhesive layer 12 of the sheet 10.

[0047] In step S4, the semiconductor wafer 1 attached to the sheet 10 is diced, so that the semiconductor wafer 1 is divided into a plurality of semiconductor devices 2 and semiconductor wafer pieces 3 that do not function as the semiconductor devices 2.

[0048] In step S5, the adhesive strength of the area of ​​the adhesive layer 12 of the sheet 10 where the semiconductor wafer fragment 3 is attached is reduced. Specifically, the area of ​​the sheet 10 where the semiconductor wafer fragment 3 is attached near the peripheral edge of the semiconductor wafer 1 is irradiated with energy for reducing the adhesive strength of the adhesive layer 12, thereby reducing the adhesive strength of the adhesive layer 12 of the sheet 10. Here, it is not necessary to reduce the adhesive strength of all areas of the sheet 10 where the semiconductor wafer fragment 3 is attached.

[0049] In step S6, the semiconductor wafer fragments 3, the adhesive strength of which has been reduced in the adhesive layer 12 of the sheet 10, are removed from the adhesive layer 12 of the sheet 10. This makes it possible to prevent the semiconductor wafer fragments 3 from jumping around and adhering to the surface of the semiconductor device 2 when picking up the individual semiconductor devices 2, thereby improving the yield of the semiconductor devices 2.

[0050] In step S7, the area of ​​the adhesive layer 12 of the sheet 10 where the multiple semiconductor devices 2 are attached is again irradiated with energy for reducing the adhesive strength of the adhesive layer 12, thereby reducing the adhesive strength of the adhesive layer 12 of the sheet 10. Note that step S7 is a step for making it easier to pick up the semiconductor device 2 from the adhesive layer 12 of the sheet 10 in the next step, step S8, and may be omitted if the semiconductor device 2 can be peeled off from the adhesive layer 12 of the sheet 10 without reducing the adhesive strength.

[0051] In step S8, the individual semiconductor devices 2 are picked up from the adhesive layer 12 of the sheet 10.

[0052] In step S9, the picked-up semiconductor device 2 is fixed to a conductive pattern, and the semiconductor device 2 is electrically connected to the conductive pattern via thin metal wires or the like.

[0053] In step S10, the semiconductor device 2 and the conductive patterns are sealed so as to be covered.

[0054] Here, between steps S3 and S4, or between steps S8 and S9, or both, a probe or the like may be used to check the characteristics of a plurality of electric circuits formed on the surface of the semiconductor wafer 1. Then, non-defective products and defective products may be separated, and semiconductor devices 2 having defective electric circuits formed therein may not be shifted to step S9.

[0055] <Effects> As described above, in the first embodiment, the semiconductor manufacturing apparatus includes a sheet holding unit that holds the sheet 10 having the base material 11 and the adhesive layer 12 provided on the surface of the base material 11 to which the semiconductor wafer 1 is attached, and an adhesive strength reducing unit that is arranged to be able to act on the sheet 10 held by the sheet holding unit and reduces the adhesive strength of a predetermined area of ​​the adhesive layer 12 of the sheet 10. The predetermined area of ​​the adhesive layer 12 is an area to which a chip 3 of the semiconductor wafer that does not function as the semiconductor device 2 is attached. Here, the adhesive strength reducing unit is a scanning type energy irradiation device 32 that irradiates the sheet 10 with energy for reducing the adhesive strength while scanning it. The energy at this time is any one of light including ultraviolet rays, heating, cooling, and radiation. The sheet holding unit is a frame fixing unit 20 that fixes and supports the dicing frame 4 attached to the peripheral portion of the semiconductor wafer 1.

[0056] Therefore, the semiconductor wafer fragments 3 can be removed before picking up the semiconductor devices 2 diced from the semiconductor wafer 1. This makes it possible to prevent the semiconductor wafer fragments 3 from jumping around and adhering to the surface of the semiconductor device 2 when picking up the semiconductor devices 2 diced from the semiconductor wafer 1.

[0057] In addition, the frame fixing unit 20 holds the sheet 10 with the adhesive layer 12 facing downward, and the semiconductor manufacturing apparatus further includes a push-down unit 23 that abuts against the substrate 11 and pushes down the semiconductor wafer piece 3 through the sheet 10.

[0058] Therefore, the semiconductor wafer fragments 3 can be removed downward, and therefore adhesion of the semiconductor wafer fragments 3 to the surface of the semiconductor device 2 can be suppressed.

[0059] In addition, since the semiconductor manufacturing equipment further includes a rotating section 40 that rotates the frame fixing unit 20, the process of removing the semiconductor wafer fragments 3 downward can be easily performed by flipping over the sheet 10 with the semiconductor wafer 1 attached to its surface.

[0060] The sheet holding section holds the sheet 10 so that the base material 11 faces downward. The semiconductor manufacturing apparatus further includes a push-up unit 24 that contacts the base material 11 and pushes up the semiconductor wafer fragment 3 through the sheet 10, a camera 25 that recognizes the semiconductor wafer fragment 3, an air gun 26 that sprays air toward the semiconductor wafer fragment 3, and a control section 41 that controls the air gun 26 to spray air and remove the semiconductor wafer fragment 3 from the adhesive layer 12 when the camera 25 recognizes the semiconductor wafer fragment 3 peeled off from the adhesive layer 12 by the push-up unit 24.

[0061] Therefore, the fragments 3 of the semiconductor wafer can be blown off toward the outer periphery of the sheet 10, so that the fragments 3 of the semiconductor wafer can be prevented from adhering to the surface of the semiconductor device 2.

[0062] In addition, the semiconductor manufacturing equipment further includes a tape attachment / detachment section 42 which attaches tape 27 having an adhesive strength lower than that of adhesive layer 12 before the adhesive strength is reduced and higher than that of adhesive layer 12 after the adhesive strength is reduced to the surface of semiconductor wafer 1 opposite to the surface in contact with adhesive layer 12, and then peels off tape 27.

[0063] Therefore, since the semiconductor wafer fragment 3 can be removed by attaching it to the tape 27, the semiconductor wafer fragment 3 can be prevented from adhering to the surface of the semiconductor device 2.

[0064] The semiconductor manufacturing apparatus further includes a tape holding section 43 that holds tape 27 above semiconductor wafer 1 so that the adhesive surface of tape 27 faces the surface of semiconductor wafer 1 opposite to the surface that contacts adhesive layer 12, the tape having an adhesive strength lower than that of adhesive layer 12 before the adhesive strength is reduced and higher than that of adhesive layer 12 after the adhesive strength is reduced, and a push-up unit 24 that abuts against substrate 11 and pushes up semiconductor wafer fragment 3 through sheet 10 to attach it to the adhesive surface of tape 27.

[0065] Therefore, since the semiconductor wafer fragment 3 can be removed by attaching it to the tape 27, the semiconductor wafer fragment 3 can be prevented from adhering to the surface of the semiconductor device 2.

[0066] <Embodiment 2> Next, a semiconductor manufacturing apparatus according to embodiment 2 will be described. Fig. 8 is a side view showing a configuration related to a decrease in adhesive strength in the semiconductor manufacturing apparatus according to embodiment 2. Note that in embodiment 2, the same components as those described in embodiment 1 are given the same reference numerals and the description thereof will be omitted.

[0067] As shown in Fig. 2, in the first embodiment, one scanning type energy irradiation device 32 is arranged below the base material 11 of the sheet 10. In contrast, as shown in Fig. 8, in the second embodiment, the energy irradiation device 32 is not of the scanning type, and a plurality of energy irradiation devices 32 are arranged below and on the outer periphery side of the base material 11 of the sheet 10. Furthermore, a mask 30 is supported by a mask support portion 31 and arranged between the energy irradiation device 32 and the sheet 10. The mask 30 includes an energy transmitting portion 30a for transmitting the energy irradiated from the energy irradiation device 32, and an energy blocking portion 30b for blocking the energy irradiated from the energy irradiation device 32.

[0068] It is known that the semiconductor wafer fragments 3 are formed near the peripheral edge of the semiconductor wafer 1. For this reason, an energy transmitting portion 30a is provided on the outer periphery of the mask 30 so that energy is irradiated to the area of ​​the sheet 10 where the peripheral edge of the semiconductor wafer 1 is attached, and an energy blocking portion 30b is provided on the inner periphery of the mask 30 so that energy is not irradiated to other areas.

[0069] The mask 30 in FIG. 8 is for carrying out the process of step S5 in FIG. 7. When carrying out the process of step S7, a mask 30 in which the positional relationship between the energy transmitting portion 30a and the energy blocking portion 30b is reversed is used, or energy is irradiated without the mask 30 being placed.

[0070] Here, the energy irradiated from the energy irradiating device 32, that is, the energy for reducing the adhesive strength, is any one of light including ultraviolet (UV) rays, heating, cooling, or radiation.

[0071] The configuration for removing the semiconductor wafer fragments 3 and the method for manufacturing the semiconductor device 2 are the same as those in the first embodiment, and therefore the description thereof will be omitted.

[0072] As described above, in embodiment 2, the adhesive strength reduction section includes an energy irradiation device 32 that irradiates energy toward the sheet 10 to reduce the adhesive strength, and a mask 30 that is arranged between the energy irradiation device 32 and the sheet 10, and the mask 30 includes an energy blocking section 30b for blocking the energy.

[0073] Therefore, it is possible to selectively reduce the adhesive strength of the adhesive layer 12 only in the area of ​​the sheet 10 where the semiconductor wafer fragment 3 is attached, without using a scanning type energy irradiation device 32, and it is possible to remove only the semiconductor wafer fragment 3 before picking up the semiconductor device. This makes it possible to prevent the semiconductor wafer fragment 3 from jumping and adhering to the surface of the semiconductor device 2 when picking up the individual semiconductor device 2.

[0074] It should be noted that the embodiments can be freely combined, and each embodiment can be modified or omitted as appropriate.

[0075] Various aspects of the present disclosure are summarized below as appendices.

[0076] (Appendix 1) A semiconductor manufacturing apparatus for manufacturing a plurality of semiconductor devices obtained by dividing a semiconductor wafer, comprising: a sheet holding section that holds a sheet having a base material and an adhesive layer that is provided on a first main surface of the base material and to which the semiconductor wafer is attached; an adhesive strength reducing portion that is arranged to be able to act on the sheet held by the sheet holding portion and reduces the adhesive strength of a predetermined region of the adhesive layer of the sheet; A semiconductor manufacturing apparatus, wherein the predetermined area of ​​the adhesive layer is an area to which a piece of the semiconductor wafer that does not function as the semiconductor device is attached.

[0077] (Appendix 2) The semiconductor manufacturing apparatus according to claim 1, wherein the adhesive strength reducing unit is a scanning energy irradiation device that irradiates the sheet with energy for reducing its adhesive strength while scanning the sheet.

[0078] (Appendix 3) the adhesive strength reducing unit includes an energy irradiating device that irradiates energy toward the sheet to reduce the adhesive strength, and a mask that is disposed between the energy irradiating device and the sheet, 2. The semiconductor manufacturing apparatus of claim 1, wherein the mask includes an energy blocking portion for blocking the energy.

[0079] (Appendix 4) 4. The semiconductor manufacturing apparatus according to claim 2 or 3, wherein the energy is any one of light including ultraviolet light, heating, cooling, or radiation.

[0080] (Appendix 5) 5. The semiconductor manufacturing apparatus according to claim 1, wherein the sheet holding unit is a frame fixing unit that fixes and supports a dicing frame attached to the peripheral portion of the semiconductor wafer.

[0081] (Appendix 6) The sheet holding portion holds the sheet so that the adhesive layer faces downward, 6. The semiconductor manufacturing apparatus according to claim 1, further comprising a push-down unit that contacts the base material and pushes down the chip of the semiconductor wafer through the sheet.

[0082] (Appendix 7) 7. The semiconductor manufacturing apparatus of claim 6, further comprising a rotating unit that rotates the sheet holding unit.

[0083] (Appendix 8) the sheet holding portion holds the sheet such that the base material faces downward; a push-up unit that contacts the base material and pushes up the fragment of the semiconductor wafer through the sheet; a camera for recognizing the chip of the semiconductor wafer; an air gun that sprays air toward the fragment of the semiconductor wafer; and a control unit that controls the air gun to spray air when the camera recognizes the piece of the semiconductor wafer peeled off from the adhesive layer by the push-up unit, thereby removing the piece of the semiconductor wafer from the adhesive layer.

[0084] (Appendix 9) The semiconductor manufacturing apparatus according to any one of claims 1 to 5, further comprising a tape attachment / detachment unit that attaches a tape having an adhesive strength lower than that of the adhesive layer before the adhesive strength is reduced and higher than that of the adhesive layer after the adhesive strength is reduced to a surface of the semiconductor wafer opposite to the surface in contact with the adhesive layer, and then peels off the tape.

[0085] (Appendix 10) a tape holding section that holds a tape having an adhesive strength lower than that of the adhesive layer before the adhesive strength is reduced and higher than that of the adhesive layer after the adhesive strength is reduced, above the semiconductor wafer such that an adhesive surface of the tape faces a surface of the semiconductor wafer opposite to a surface of the semiconductor wafer that contacts the adhesive layer; The semiconductor manufacturing apparatus according to any one of claims 1 to 5, further comprising a push-up unit that contacts the base material and pushes up the piece of the semiconductor wafer through the sheet to attach it to the adhesive surface of the tape.

[0086] (Appendix 11) A step of attaching a semiconductor wafer to an adhesive layer of a sheet having a base material and an adhesive layer provided on a first main surface of the base material; dicing the semiconductor wafer into a plurality of semiconductor devices and a fragment of the semiconductor wafer that does not function as a semiconductor device; reducing the adhesive strength of the adhesive layer in the region to which the chip of the semiconductor wafer is attached by an adhesive strength reducing portion; removing the chip of the semiconductor wafer from the adhesive layer; picking up a plurality of the semiconductor devices from the attachment layer; The manufacturing method of a semiconductor device comprising the steps of:

[0087] (Appendix 12) The method for manufacturing a semiconductor device described in Appendix 11 further comprises, between the step of removing the fragment of the semiconductor wafer from the adhesive layer and the step of picking up the plurality of semiconductor devices from the adhesive layer, a step of reducing the adhesive force of the area of ​​the adhesive layer to which the plurality of semiconductor devices are attached by the adhesive force reducing section. [Explanation of symbols]

[0088] REFERENCE SIGNS LIST 1 semiconductor wafer, 2 semiconductor device, 3 semiconductor wafer fragment, 4 dicing frame, 10 sheet, 11 substrate, 12 adhesive layer, 20 frame fixing unit, 23 push-down unit, 24 push-up unit, 25 camera, 26 air gun, 27 tape, 30 mask, 30b energy blocking unit, 32 energy irradiation device, 40 rotation unit, 41 control unit, 42 tape attachment / detachment unit, 43 tape holding unit.

Claims

1. A semiconductor manufacturing apparatus for manufacturing a plurality of semiconductor devices obtained by dividing a semiconductor wafer, comprising: a sheet holding section that holds a sheet having a base material and an adhesive layer that is provided on a first main surface of the base material and to which the semiconductor wafer is attached; an adhesive strength reducing portion that is arranged to be able to act on the sheet held by the sheet holding portion and reduces the adhesive strength of a predetermined region of the adhesive layer of the sheet; A semiconductor manufacturing apparatus, wherein the predetermined area of ​​the adhesive layer is an area to which a piece of the semiconductor wafer that does not function as the semiconductor device is attached.

2. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the adhesive strength reducing section is a scanning type energy irradiating device that irradiates the sheet with energy for reducing the adhesive strength while scanning the sheet.

3. the adhesive strength reducing unit includes an energy irradiating device that irradiates energy toward the sheet to reduce the adhesive strength, and a mask that is disposed between the energy irradiating device and the sheet, 2. The semiconductor manufacturing apparatus according to claim 1, wherein the mask includes an energy blocking portion for blocking the energy.

4. 4. The semiconductor manufacturing apparatus according to claim 2, wherein the energy is any one of light including ultraviolet light, heating, cooling, and radiation.

5. 2. The semiconductor manufacturing apparatus according to claim 1, wherein the sheet holding section is a frame fixing unit that fixes and supports a dicing frame attached to a peripheral portion of the semiconductor wafer.

6. The sheet holding portion holds the sheet so that the adhesive layer faces downward, The semiconductor manufacturing apparatus according to claim 1 , further comprising a push-down unit that comes into contact with the base material and pushes down the chip of the semiconductor wafer through the sheet.

7. The semiconductor manufacturing apparatus according to claim 6 , further comprising a rotating unit that rotates the sheet holding unit.

8. the sheet holding portion holds the sheet such that the base material faces downward; a push-up unit that contacts the base material and pushes up the chip of the semiconductor wafer through the sheet; a camera for recognizing the chip of the semiconductor wafer; an air gun that sprays air toward the fragment of the semiconductor wafer; 2. The semiconductor manufacturing apparatus of claim 1, further comprising a control unit that controls, when the camera recognizes the piece of the semiconductor wafer peeled off from the adhesive layer by the push-up unit, to spray air from the air gun to remove the piece of the semiconductor wafer from the adhesive layer.

9. 2. The semiconductor manufacturing apparatus of claim 1, further comprising a tape attachment / detachment unit that attaches a tape having an adhesive strength lower than that of the adhesive layer before its adhesive strength is reduced and higher than that of the adhesive layer after its adhesive strength is reduced to a surface of the semiconductor wafer opposite to the surface in contact with the adhesive layer, and then peels off the tape.

10. a tape holding section that holds a tape having an adhesive strength lower than that of the adhesive layer before the adhesive strength is reduced and higher than that of the adhesive layer after the adhesive strength is reduced, above the semiconductor wafer such that an adhesive surface of the tape faces a surface of the semiconductor wafer opposite to a surface of the semiconductor wafer that contacts the adhesive layer; 2. The semiconductor manufacturing apparatus according to claim 1, further comprising a push-up unit that comes into contact with the base material and pushes up the piece of the semiconductor wafer through the sheet to attach it to the adhesive surface of the tape.

11. A step of attaching a semiconductor wafer to an adhesive layer of a sheet having a base material and an adhesive layer provided on a first main surface of the base material; dicing the semiconductor wafer into a plurality of semiconductor devices and a fragment of the semiconductor wafer that does not function as a semiconductor device; reducing the adhesive strength of the adhesive layer in the region to which the chip of the semiconductor wafer is attached by an adhesive strength reducing portion; removing the chip of the semiconductor wafer from the adhesive layer; picking up a plurality of the semiconductor devices from the attachment layer; The manufacturing method of a semiconductor device comprising the steps of:

12. The method for manufacturing a semiconductor device as described in claim 11, further comprising a step of reducing the adhesive force of the area of ​​the adhesive layer to which the multiple semiconductor devices are attached by the adhesive force reducing portion between the step of removing the fragment of the semiconductor wafer from the adhesive layer and the step of picking up the multiple semiconductor devices from the adhesive layer.

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