Substrate processing device and substrate processing method

Abstract

To provide a substrate processing device capable of peeling a polymer film from a substrate using no peeling liquid.SOLUTION: A substrate processing device includes at least one peeling gas nozzle 33 and a nozzle actuator. The peeling gas nozzle breaks a polymer film 80 by the pressure of a peeling gas so that the polymer film 80 is divided into a peeled section 82 peeled from an upper surface of a substrate W and a close contact section 83 in close contact with an upper surface of the substrate W by discharging the peeling gas toward the upper surface of the substrate W at a first speed, and thereafter changes the close contact section 83 that entered between the peeling section 82 and the substrate W into the peeling section 82 while discharging the peeling gas toward the upper surface of the substrate W at a second speed lower than the first speed. The nozzle actuator changes a distance from a collision position of the peeling gas to a center of the substrate W relative to the upper surface of the substrate W by horizontally moving the at least one peeling gas nozzle 33.SELECTED DRAWING: Figure 7F

Description

[Technical field]

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method for processing substrates, including, for example, semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal displays and organic EL (electroluminescence) displays, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells. [Background technology]

[0002] Patent Document 1 discloses a substrate cleaning method and a substrate cleaning system that remove particles from a substrate using a treatment film. In this method and system, a film-forming treatment liquid for forming a treatment film is supplied to a substrate having a hydrophilic surface. Then, a stripping treatment liquid for stripping the treatment film from the substrate is supplied to the substrate, and a dissolving treatment liquid for dissolving the treatment film is supplied to the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2015-95583 A Summary of the Invention [Problem to be solved by the invention]

[0004] However, in the method and system described in Patent Document 1, it is necessary to supply a stripping processing liquid to the substrate in order to strip the processing film from the substrate, which increases consumption of the processing liquid.

[0005] An object of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of peeling off a polymer film from a substrate without using a stripping liquid. [Means for solving the problem]

[0006] One embodiment of the present invention provides a substrate processing apparatus comprising: a substrate holder that horizontally holds a substrate whose upper surface is covered with a solid or semi-solid polymer film; at least one peeling gas nozzle that sprays a peeling gas at a first speed toward the upper surface of the substrate held by the substrate holder, thereby breaking the polymer film with the pressure of the peeling gas so that the polymer film is separated into a peeled portion peeled off from the upper surface of the substrate and an adhered portion that is adhered to the upper surface of the substrate, and then sprays the peeling gas toward the upper surface of the substrate held by the substrate holder at a second speed lower than the first speed, thereby changing the adhered portion into the peeling portion with the peeling gas that has entered between the peeling portion and the substrate; and a nozzle actuator that changes the distance from the collision position of the peeling gas with the upper surface of the substrate to the center of the substrate by horizontally moving the at least one peeling gas nozzle.

[0007] In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

[0008] The nozzle actuator positions the at least one stripping gas nozzle at a first ejection position where the stripping gas collides with a non-device formation region in the upper surface of the substrate when the at least one stripping gas nozzle ejects the stripping gas at the first velocity, and moves the at least one stripping gas nozzle to a position where the stripping gas collides with a device formation region in the upper surface of the substrate when the at least one stripping gas nozzle ejects the stripping gas at the second velocity.

[0009] The polymer film is a solid or semi-solid film containing a water-soluble polymer, and the substrate processing apparatus further includes a rinse liquid nozzle that ejects a rinse liquid containing water toward the upper surface of the substrate held by the substrate holder after the polymer film has been peeled off from the upper surface of the substrate.

[0010] The substrate processing apparatus further includes a cylindrical guard that receives the polymer film and the rinse liquid that have been scattered around the substrate from the upper surface of the substrate held by the substrate holder.

[0011] The polymer film is a solid or semi-solid film comprising a water-soluble polymer, and the contact angle of water with the top surface of the substrate is 32 degrees or greater.

[0012] The substrate processing apparatus further includes a polymer solution nozzle that ejects a polymer solution toward the upper surface of the substrate held by the substrate holder, and a heat source that generates heat to change the liquid film of the polymer solution on the substrate into the polymer film.

[0013] The at least one stripping gas nozzle directs the stripping gas toward the top surface of the substrate held by the substrate holder until the entire polymer film is peeled off the top surface of the substrate without separating.

[0014] The at least one stripping gas nozzle is a stripping gas nozzle that ejects the stripping gas at the first speed and at the second speed, the substrate processing apparatus further includes a flow rate control valve that changes the flow rate of the stripping gas supplied to the one stripping gas nozzle, and the one stripping gas nozzle is a variable aperture nozzle whose opening area decreases when the flow rate of the stripping gas supplied to the stripping gas nozzle increases and whose opening area increases when the flow rate of the stripping gas supplied to the stripping gas nozzle decreases.

[0015] The variable aperture nozzle includes an outer tube including an outlet for discharging the separation gas, an inner tube including a tip opening for discharging the separation gas within the outer tube, and an elastic body supporting the inner tube within the outer tube, wherein when the flow rate of the separation gas supplied into the outer tube increases to a first flow rate, the elastic body elastically deforms into a first shape in which the tip opening of the inner tube is positioned outside the outer tube with the inner tube inserted into the outlet of the outer tube, and when the flow rate of the separation gas supplied into the outer tube decreases from the first flow rate to a second flow rate, the elastic body returns to a second shape in which the entire inner tube is positioned within the outer tube.

[0016] Another embodiment of the present invention provides a substrate processing method including the steps of: horizontally holding a substrate whose upper surface is covered with a solid or semi-solid polymer film; discharging a peeling gas from at least one peeling gas nozzle toward the upper surface of the substrate at a first speed, thereby breaking the polymer film with the pressure of the peeling gas so that the polymer film is separated into a peeled portion peeled from the upper surface of the substrate and a contact portion in contact with the upper surface of the substrate; and discharging the peeling gas from the at least one peeling gas nozzle toward the upper surface of the substrate at a second speed lower than the first speed, while moving the at least one peeling gas nozzle horizontally, thereby changing the contact portion into the peeled portion with the peeling gas that has entered between the peeling portion and the substrate. This method can achieve the same effects as the substrate processing apparatus described above. At least one of the features described above regarding the substrate processing apparatus may be added to the substrate processing method. [Brief description of the drawings]

[0017] [Figure 1A] 1 is a schematic plan view showing a layout of a substrate processing apparatus according to an embodiment of the present invention; [Figure 1B] 1 is a schematic side view of a substrate processing apparatus; [Diagram 2]1 is a schematic diagram showing the inside of a processing unit provided in a substrate processing apparatus as viewed horizontally. [Figure 3A-D] FIG. 2 is a schematic cross-sectional view of a stripping gas nozzle. [Figure 4] 2 is a block diagram showing an electrical configuration of the substrate processing apparatus; FIG. [Diagram 5] 5A to 5C are process diagrams illustrating an example of substrate processing performed by the substrate processing apparatus. [Figure 6] 6 is a time chart showing an example of changes in flow rate, etc. of a stripping gas when a polymer film stripping process is performed. [Figure 7A] FIG. 2 is a horizontal view of the substrate when the polymer film peeling process is being performed. [Figure 7B] FIG. 2 is a diagram showing a vertical cross section of a substrate when a polymer film peeling process is being performed. [Figure 7C] FIG. 2 is a diagram showing a vertical cross section of a substrate when a polymer film peeling process is being performed. [Figure 7D] FIG. 2 is a top view of the substrate during a polymer film peeling process. [Figure 7E] FIG. 2 is a top view of the substrate during a polymer film peeling process. [Figure 7F] FIG. 2 is a horizontal view of the substrate when the polymer film peeling process is being performed. [Figure 7G] FIG. 2 is a horizontal view of the substrate when the polymer film peeling process is being performed. [Figure 7H] FIG. 11 is a horizontal view of the substrate when a rinsing liquid supplying step is being performed. [Figure 8] FIG. 2 is a schematic plan view of a substrate showing non-device formation regions and device formation regions. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0018] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0019] Fig. 1A is a schematic plan view showing a layout of a substrate processing apparatus 1 according to one embodiment of the present invention, and Fig. 1B is a schematic side view of the substrate processing apparatus 1.

[0020] The substrate processing apparatus 1 is a single-wafer type apparatus that processes disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 includes a load port LP that holds a carrier CA that accommodates a substrate W, a plurality of processing units 2 that process the substrate W transferred from the carrier CA on the load port LP with a processing fluid such as a processing liquid or a processing gas, a transfer system TS that transfers the substrate W between the carrier CA on the load port LP and the plurality of processing units 2, and a controller 3 that controls the substrate processing apparatus 1.

[0021] The multiple processing units 2 form multiple towers TW. Fig. 1A shows an example in which four towers TW are formed. As shown in Fig. 1B, the multiple processing units 2 included in one tower TW are stacked vertically. As shown in Fig. 1A, the multiple towers TW form two rows extending in the depth direction of the substrate processing apparatus 1 in a plan view. In a plan view, the two rows face each other via a transport path TP.

[0022] The transport system TS includes an indexer robot IR that transports substrates W between a carrier CA on a load port LP and the multiple processing units 2, and a center robot CR that transports substrates W between the indexer robot IR and the multiple processing units 2. The indexer robot IR is disposed between the load port LP and the center robot CR in a plan view. The center robot CR is disposed on the transport path TP.

[0023] The indexer robot IR includes one or more hands Hi that horizontally support a substrate W. The hands Hi can move parallel to both the horizontal and vertical directions. The hands Hi can rotate about a vertical line. The hands Hi can load and unload the substrate W to and from the carriers CA on any of the load ports LP, and can transfer the substrate W to and from the center robot CR.

[0024] The center robot CR includes one or more hands Hc that horizontally support the substrate W. The hands Hc can move parallel to both the horizontal and vertical directions. The hands Hc can rotate about a vertical line. The hands Hc can transfer the substrate W to and from the indexer robot IR, and can transport the substrate W into and out of any of the processing units 2.

[0025] Next, the processing unit 2 will be described.

[0026] 2 is a horizontal schematic diagram of the inside of a processing unit 2 provided in the substrate processing apparatus 1. The processing unit 2 includes a box-shaped chamber 4 having an internal space, a spin chuck 10 that holds one substrate W horizontally in the chamber 4 and rotates the substrate W about a vertical rotation axis A1 passing through the center of the substrate W, and a cylindrical processing cup 21 that surrounds the spin chuck 10.

[0027] The chamber 4 includes a box-shaped partition 5 having an inlet / outlet 5b through which the substrate W passes, and a door 7 for opening and closing the inlet / outlet 5b. The FFU 6 (fan filter unit) is disposed above an air outlet 5a disposed on the upper portion of the partition 5. The FFU 6 constantly supplies clean air (air filtered by a filter) into the chamber 4 from the air outlet 5a. The gas within the chamber 4 is exhausted from the chamber 4 through an exhaust duct 8 connected to the bottom of the processing cup 21. This constantly creates a downflow of clean air within the chamber 4. The flow rate of the exhaust air discharged into the exhaust duct 8 is changed according to the opening degree of an exhaust valve 9 disposed within the exhaust duct 8.

[0028] The spin chuck 10 includes a disk-shaped spin base 12 held horizontally, a number of chuck pins 11 that hold the substrate W horizontally above the spin base 12, a spin shaft 13 extending downward from the center of the spin base 12, and a spin motor 14 that rotates the spin base 12 and the number of chuck pins 11 by rotating the spin shaft 13.

[0029] The spin chuck 10 is not limited to a clamping type chuck in which multiple chuck pins 11 contact the edge surface of the substrate W, but may be a vacuum type chuck that holds the substrate W horizontally by adsorbing the back surface (lower surface) of the substrate W, which is a surface on which no devices are formed, to an upper surface 12u of the spin base 12. When the spin chuck 10 is a clamping type chuck, the multiple chuck pins 11 correspond to a substrate holder. When the spin chuck 10 is a vacuum type chuck, the spin base 12 corresponds to a substrate holder.

[0030] Processing cup 21 includes a plurality of guards 24 that receive processing liquid discharged around substrate W, a plurality of cups 23 that receive processing liquid guided downward by the plurality of guards 24, and a cylindrical outer wall member 22 that surrounds the plurality of guards 24 and the plurality of cups 23. Figure 2 shows an example in which four guards 24 and three cups 23 are provided, and the outermost cup 23 is integrated with the third guard 24 from the top.

[0031] The guard 24 includes a cylindrical portion 25 surrounding the spin chuck 10, and an annular ceiling portion 26 extending obliquely upward from the upper end of the cylindrical portion 25 toward the rotation axis A1. The multiple ceiling portions 26 are stacked one on top of the other, and the multiple cylindrical portions 25 are arranged concentrically. The annular upper end of the ceiling portion 26 corresponds to an upper end 24u of the guard 24 surrounding the substrate W and the spin base 12 in a plan view. The multiple cups 23 are respectively arranged below the multiple cylindrical portions 25. The cups 23 form annular grooves that receive the processing liquid guided downward by the guard 24.

[0032] The processing unit 2 includes a guard lifting unit 27 that raises and lowers the multiple guards 24 individually. The guard lifting unit 27 positions the guards 24 at any position within a range from the upper position to the lower position. FIG. 2 shows a state in which two guards 24 are disposed at the upper position and the remaining two guards 24 are disposed at the lower position. The upper position is a position where the upper end 24u of the guard 24 is disposed above the holding position where the substrate W held by the spin chuck 10 is disposed. The lower position is a position where the upper end 24u of the guard 24 is disposed below the holding position.

[0033] The processing unit 2 includes a plurality of nozzles that discharge a processing liquid toward the substrate W held by the spin chuck 10. The plurality of nozzles includes a polymer solution nozzle 31 that discharges a polymer solution toward the upper surface of the substrate W, a rinsing liquid nozzle 32 that discharges a rinsing liquid toward the upper surface of the substrate W, and a stripping gas nozzle 33 that discharges a stripping gas toward the upper surface of the substrate W. A lower surface nozzle 71, which will be described later, is also included in the plurality of nozzles.

[0034] The polymer solution nozzle 31 may be a scan nozzle that moves the collision position of the polymer solution on the substrate W within the upper surface of the substrate W, or may be a fixed nozzle that cannot move the collision position of the polymer solution on the substrate W. The same applies to the other nozzles. Fig. 2 shows an example in which the polymer solution nozzle 31, the rinsing liquid nozzle 32, and the stripping gas nozzle 33 are scan nozzles.

[0035] The polymer solution nozzle 31 is connected to a polymer solution pipe 31p that guides the polymer solution to the polymer solution nozzle 31. When a polymer solution valve 31v attached to the polymer solution pipe 31p is opened, the polymer solution is continuously discharged downward from the discharge port of the polymer solution nozzle 31.

[0036] Although not shown, the polymer solution valve 31v includes a valve body provided with an annular valve seat through which the polymer solution passes, a valve element movable relative to the valve seat, and an actuator that moves the valve element between a closed position in which the valve element contacts the valve seat and an open position in which the valve element is separated from the valve seat. The same applies to the other valves. The actuator may be a pneumatic actuator or an electric actuator, or may be an actuator other than these. The control device 3 opens and closes the polymer solution valve 31v, etc. by controlling the actuator.

[0037] The polymer solution nozzle 31 is connected to a nozzle moving unit 31m that moves the polymer solution nozzle 31 in at least one of the vertical and horizontal directions. The nozzle moving unit 31m moves the polymer solution nozzle 31 horizontally between a processing position where the polymer solution discharged from the polymer solution nozzle 31 is supplied to the upper surface of the substrate W and a standby position where the polymer solution nozzle 31 is positioned outside the processing cup 21 in a plan view.

[0038] A polymer solution is a solution containing a polymer corresponding to a solute and a solvent in which the polymer dissolves. The polymer is a water-soluble polymer (hydrophilic polymer) that dissolves in water. The solvent is water. Thus, the polymer solution is an aqueous polymer solution. The polymer solution may contain components other than the water-soluble polymer and water. The solvent may be a liquid of an amphipathic substance having a hydrophilic group and a hydrophobic group in one molecule. The polymer may be a hydrophobic polymer that is insoluble or almost insoluble in water. In this case, the solvent may be a liquid of an organic solvent, or a liquid of a substance other than an organic solvent.

[0039] The water-soluble polymer is a polymer in which a hydrophilic group such as a carboxyl group, a hydroxyl group, or a sulfonic acid group is arranged at the end of the molecule. The water-soluble polymer may include at least one of a water-soluble acrylic resin, a water-soluble polyester, and a water-soluble polyurethane, or may include a polymer other than these. The water-soluble acrylic resin may be at least one of an OH group acrylic resin and a hydroxyl group acrylic resin. The water-soluble polymer may be a polymer that is insoluble or almost insoluble in oil, or may be a polymer that is soluble in oil. In the latter case, the solubility of the water-soluble polymer in water is greater than the solubility of the water-soluble polymer in oil.

[0040] The upper surface of the substrate W is one of the surfaces in contact with the atmosphere in the space in which the substrate W is placed. The upper surface of the substrate W immediately before contacting with the polymer solution may be either hydrophobic or hydrophilic. The contact angle of water with the upper surface of the substrate W immediately before contacting with the polymer solution may be 32 degrees or more, or may be less than 32 degrees. At least a part of the upper surface of the substrate W may be made of silicon carbonitride (SiCN) or amorphous carbon. The contact angle of water with silicon carbonitride is 62 degrees. The contact angle of water with amorphous carbon is 50 to 60 degrees. However, the material of the upper surface of the substrate W is not limited to silicon carbonitride and amorphous carbon.

[0041] The rinse liquid nozzle 32 is connected to a rinse liquid pipe 32p that guides the rinse liquid to the rinse liquid nozzle 32. When a rinse liquid valve 32v attached to the rinse liquid pipe 32p is opened, the rinse liquid is continuously discharged downward from the discharge port of the rinse liquid nozzle 32. FIG. 2 shows an example in which the rinse liquid nozzle 32 discharges DIW. DIW (Deionized Water) stands for pure water (deionized water). The rinse liquid discharged from the rinse liquid nozzle 32 may be any one of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water with a diluted concentration (for example, about 10 to 100 ppm), or may be a liquid other than these.

[0042] The rinsing liquid nozzle 32 is connected to a nozzle moving unit 32m that moves the rinsing liquid nozzle 32 in at least one of the vertical and horizontal directions. The nozzle moving unit 32m moves the rinsing liquid nozzle 32 horizontally between a processing position where the rinsing liquid discharged from the rinsing liquid nozzle 32 is supplied to the upper surface of the substrate W and a standby position where the rinsing liquid nozzle 32 is located outside the processing cup 21 in a plan view.

[0043] The stripping gas nozzle 33 is connected to a stripping gas pipe 33p that guides the stripping gas to the stripping gas nozzle 33. When an opening / closing valve 33v attached to the stripping gas pipe 33p is opened, the stripping gas is continuously discharged downward from the outlet of the stripping gas nozzle 33 at a flow rate corresponding to the opening of a flow rate adjustment valve 33f that changes the flow rate of the stripping gas. Fig. 2 shows an example in which the stripping gas nozzle 33 discharges nitrogen gas, which is an example of a stripping gas. The stripping gas may be an inert gas other than nitrogen gas, or a gas other than an inert gas.

[0044] The separation gas nozzle 33 is connected to a nozzle moving unit 33m that moves the separation gas nozzle 33 in at least one of the vertical and horizontal directions. The nozzle moving unit 33m moves the separation gas nozzle 33 horizontally between a processing position where the separation gas discharged from the separation gas nozzle 33 is supplied to the upper surface of the substrate W and a standby position where the separation gas nozzle 33 is located outside the processing cup 21 in a plan view.

[0045] The nozzle moving unit 33m moves the polymer solution nozzle 31 horizontally along a path that is arcuate in plan view by rotating the polymer solution nozzle 31 around a vertical straight line located outside the processing cup 21. Because the radius of the arcuate path is large, the polymer solution nozzle 31 moves horizontally along a path that can be regarded as a straight line in plan view. The nozzle moving unit 33m may translate the polymer solution nozzle 31 horizontally instead of rotating it.

[0046] The nozzle movement unit 33m includes a nozzle actuator 33a that generates power to move the polymer solution nozzle 31, and a support arm 33s that transmits the power of the nozzle actuator 33a to the polymer solution nozzle 31. The support arm 33s is an example of a transmission element that transmits the power of the nozzle actuator 33a to the polymer solution nozzle 31. The polymer solution nozzle 31 is attached to the support arm 33s.

[0047] The nozzle actuator 33a is a device that converts driving energy, which may be electrical, fluid, magnetic, thermal, or chemical energy, into mechanical work. The nozzle actuator 33a includes an electric motor (rotary motor), a linear motor, an air cylinder, and other devices. When the nozzle actuator 33a is an electric motor that translates the polymer solution nozzle 31 horizontally, the rotation of the nozzle actuator 33a may be converted into linear motion of the polymer solution nozzle 31 by a motion converter such as a ball screw and a ball nut.

[0048] The multiple nozzles include a lower surface nozzle 71 that ejects a processing fluid toward a central portion of the lower surface of the substrate W. The lower surface nozzle 71 includes a disk portion disposed between the upper surface 12u of the spin base 12 and the lower surface of the substrate W, and a cylindrical portion extending downward from the disk portion. The ejection port of the lower surface nozzle 71 opens at the central portion of the upper surface of the disk portion. When the substrate W is held by the spin chuck 10, the ejection port of the lower surface nozzle 71 faces the central portion of the lower surface of the substrate W in the vertical direction.

[0049] The lower nozzle 71 is connected to a heating fluid pipe 71p that guides hot water, which is an example of a heating fluid, to the lower nozzle 71. The hot water is pure water that is hotter than room temperature (for example, 20 to 30° C.). The pure water is heated by a heater 71h, which is an example of a heat source, and then supplied to the lower nozzle 71. When a heating fluid valve 71v attached to the heating fluid pipe 71p is opened, the hot water is continuously discharged upward from the discharge port of the lower nozzle 71. As a result, the hot water is supplied to the lower surface of the substrate W.

[0050] Next, an example of the stripping gas nozzle 33 will be described.

[0051] Fig. 3A is a schematic diagram showing a vertical cross section of the separation gas nozzle 33 with the inner tube 35 disposed at the second position. Fig. 3B is a schematic diagram showing a horizontal cross section of the separation gas nozzle 33 taken along line BB shown in Fig. 3A. Fig. 3C is a schematic diagram showing a horizontal cross section of the separation gas nozzle 33 taken along line CC shown in Fig. 3A. Fig. 3D is a schematic diagram showing a vertical cross section of the separation gas nozzle 33 with the inner tube 35 disposed at the first position.

[0052] The separation gas nozzle 33 is a variable aperture nozzle whose opening area decreases as the flow rate of the separation gas supplied to the separation gas nozzle 33 increases, and whose opening area increases as the flow rate of the separation gas supplied to the separation gas nozzle 33 decreases. The separation gas nozzle 33 includes an outer tube 34 including a discharge port 34o through which the separation gas is discharged downward, an inner tube 35 including a tip opening 35o through which the separation gas is discharged downward within the outer tube 34, and a plurality of elastic bodies 36 that support the inner tube 35 within the outer tube 34.

[0053] The outer tube 34 surrounds the inner tube 35. The outer tube 34 is concentric with the inner tube 35. The outer tube 34 supports the inner tube 35 via a plurality of fixing arms 38, a fixing ring 37, and a plurality of elastic bodies 36. The fixing arms 38, the fixing ring 37, and the elastic bodies 36 are disposed inside the outer tube 34.

[0054] 3B, fixing ring 37 is concentric with outer tube 34 and inner tube 35. A plurality of fixing arms 38 extend from the outer circumferential surface of fixing ring 37 to the inner circumferential surface of outer tube 34. The plurality of fixing arms 38 are disposed at intervals in the circumferential direction of outer tube 34. Fixing ring 37 is fixed to outer tube 34 via the plurality of fixing arms 38.

[0055] 3A and 3D, the multiple elastic bodies 36 and the inner tube 35 are disposed below the fixing ring 37. The multiple elastic bodies 36 extend downward from the fixing ring 37 to the upper end of the inner tube 35. The inner tube 35 is suspended from the fixing ring 37 by the multiple elastic bodies 36. As shown in FIG. 3B, the multiple elastic bodies 36 are disposed at intervals in the circumferential direction of the outer tube 34.

[0056] The discharge port 34o of the outer tube 34 opens at the lower surface of the outer tube 34. The tip opening 35o of the inner tube 35 opens at the lower surface of the inner tube 35. The discharge port 34o and the tip opening 35o are two concentric circles. The diameter of the discharge port 34o is larger than the diameter of the tip opening 35o. The separation gas guided by the separation gas piping 33p enters the outer tube 34 from an inlet 34i opened at the outer surface of the outer tube 34. The separation gas in the outer tube 34 is discharged downward from the discharge port 34o of the outer tube 34. Furthermore, the separation gas in the outer tube 34 enters the inner tube 35 from the upper end of the inner tube 35 and is discharged downward from the tip opening 35o of the inner tube 35.

[0057] The upper surface of the inner tube 35 is pressed downward by the peeled gas in the outer tube 34. In the example shown in FIG. 3A and FIG. 3D, since the inner peripheral surface of the inner tube 35 is inverted cone shape, the inner peripheral surface of the inner tube 35 is also pressed downward by the peeled gas in the outer tube 34. The force pressing the inner tube 35 downward is transmitted to the multiple elastic bodies 36. Therefore, the multiple elastic bodies 36 expand and contract up and down according to the air pressure in the outer tube 34. The elastic bodies 36 are made of rubber or resin. As long as the elastic bodies 36 have rubber elasticity, they may be made of materials other than rubber and resin.

[0058] As shown in FIG. 3D, the inner tube 35 is formed in a shape and size such that it protrudes downward from the discharge port 34o of the outer tube 34 but cannot escape from the outer tube 34. FIG. 3D shows an example in which the maximum value of the outer diameter of the inner tube 35 is larger than the diameter of the discharge port 34o of the outer tube 34. In this example, the outer peripheral surface of the inverted cone of the inner tube 35 contacts the inverted cone-shaped cone portion 34c provided on the inner peripheral surface of the outer tube 34, and this contact prevents the inner tube 35 from moving downward relative to the outer tube 34. The discharge port 34o of the outer tube 34 is formed by the inverted cone-shaped cone portion 34c. The tip opening 35o of the inner tube 35 is formed by the inverted cone-shaped inner peripheral surface of the inner tube 35.

[0059] 3A shows a state in which a gas such as a stripping gas is not supplied into the outer through the inlet 34i of the outer tube 34. FIG. 3D shows a state in which a stripping gas is supplied into the outer through the inlet 34i of the outer tube 34.

[0060] As shown in FIG. 3D, when the flow rate of the stripping gas supplied into the outer tube 34 increases to a first flow rate, the elastic body 36 elastically deforms into a first shape in which the tip opening 35o of the inner tube 35 is disposed outside the outer tube 34 with the inner tube 35 inserted into the discharge port 34o of the outer tube 34. As a result, the inner tube 35 is disposed in a first position shown in FIG. 3D. As shown in FIG. 3A, when the flow rate of the stripping gas supplied into the outer tube 34 decreases from the first flow rate to a second flow rate, the elastic body 36 returns to a second shape in which the entire inner tube 35 is disposed inside the outer tube 34. As a result, the inner tube 35 is disposed in a second position shown in FIG. 3A.

[0061] When the inner tube 35 is disposed in the first position shown in Fig. 3D, the separation gas in the outer tube 34 exits the separation gas nozzle 33 from the tip opening 35o of the inner tube 35. When the inner tube 35 is disposed in the second position shown in Fig. 3A, the separation gas in the outer tube 34 exits the separation gas nozzle 33 from the discharge port 34o of the outer tube 34. Therefore, when the elastic body 36 is in the first shape, the tip opening 35o of the inner tube 35 is the exit for the separation gas, and the area of ​​the tip opening 35o corresponds to the opening area of ​​the separation gas nozzle 33. When the elastic body 36 is in the second shape, the discharge port 34o of the outer tube 34 is the exit for the separation gas, and the area of ​​the discharge port 34o corresponds to the opening area of ​​the separation gas nozzle 33.

[0062] Next, the electrical configuration of the substrate processing apparatus 1 will be described.

[0063] 4 is a block diagram showing an electrical configuration of the substrate processing apparatus 1. The control device 3 includes at least one computer. The computer includes a computer main body 3a and a peripheral device 3d connected to the computer main body 3a. The computer main body 3a includes a CPU 3b (central processing unit) that executes various instructions and a memory 3c that stores information. The peripheral device 3d includes a storage 3e that stores information such as a program P, a reader 3f that reads information from a removable medium RM, and a communication device 3g that communicates with other devices such as a host computer. The memory 3c and the storage 3e are examples of storage devices that store information.

[0064] The control device 3 is connected to an input device and a display device. The input device is operated when an operator such as a user or a maintenance person inputs information to the substrate processing apparatus 1. The information is displayed on the screen of the display device. The input device may be any one of a keyboard, a pointing device, and a touch panel, or may be a device other than these. The substrate processing apparatus 1 may be provided with a touch panel display that serves as both the input device and the display device.

[0065] The CPU 3b executes a program P stored in the storage 3e. The program P in the storage 3e may be one that has been pre-installed in the control device 3, may be one that has been sent from the removable medium RM to the storage 3e via the reader 3f, or may be one that has been sent from an external device such as a host computer to the storage 3e via the communication device 3g.

[0066] The storage 3e and the removable medium RM are non-volatile memories that retain their memory even when power is not supplied. The storage 3e is, for example, a magnetic storage device such as a hard disk drive. The removable medium RM is, for example, an optical disk such as a compact disk or a semiconductor memory such as a memory card. The removable medium RM is an example of a computer-readable recording medium on which the program P is recorded. The removable medium RM is a non-transitory tangible recording medium.

[0067] The storage 3e stores a plurality of recipes. A recipe is information that specifies the processing content, processing conditions, and processing procedure of the substrate W. The plurality of recipes differ from each other in at least one of the processing content, processing conditions, and processing procedure of the substrate W. The control device 3 controls the substrate processing apparatus 1 so that the substrate W is processed according to the recipe specified by the host computer. The control device 3 is programmed to execute each of the following steps.

[0068] Next, an example of processing of the substrate W will be described.

[0069] 5 is a process diagram for explaining an example of processing of the substrate W performed by the substrate processing apparatus 1. In the following, reference will be made to FIGS.

[0070] The substrate W to be processed is, for example, a semiconductor wafer such as a silicon wafer. The substrate W may be a substrate W having a pattern PA (see FIG. 7B) formed on the surface of the substrate W, or a substrate W having no pattern PA formed on the surface of the substrate W.

[0071] When the substrate W is processed by the substrate processing apparatus 1, a loading step (step S1 in FIG. 5) of loading the substrate W into the chamber 4 is performed.

[0072] Specifically, with all of the guards 24 in the lower position and all of the scan nozzles in the standby position, the center robot CR (see FIG. 1A) supports the substrate W horizontally with the hand Hc and causes the hand Hc to enter the chamber 4. Then, the center robot CR places the substrate W on the hand Hc on the multiple chuck pins 11 with the surface of the substrate W facing upward. Then, the center robot CR causes the hand Hc to retreat from inside the chamber 4.

[0073] After the substrate W is placed on the multiple chuck pins 11, the multiple chuck pins 11 are pressed against the edge surface of the substrate W to grip the substrate W. Then, the spin motor 14 is driven to start rotating the substrate W (step S2 in FIG. 5). This causes the substrate W to rotate at the polymer solution supply speed. The guard lifting unit 27 lifts at least one guard 24 from the lower position to the upper position before or after the rotation of the substrate W starts.

[0074] Next, a polymer solution supplying step (step S3 in FIG. 5) of supplying a polymer solution onto the upper surface of the substrate W is performed.

[0075] Specifically, with at least one guard 24 in the upper position, the nozzle moving unit 31m moves the polymer solution nozzle 31 from the standby position to the processing position. Then, the polymer solution valve 31v is opened, and the polymer solution nozzle 31 starts discharging the polymer solution. When a predetermined time has elapsed since the polymer solution valve 31v was opened, the polymer solution valve 31v is closed, and discharging of the polymer solution is stopped. Then, the nozzle moving unit 31m moves the polymer solution nozzle 31 to the standby position.

[0076] The polymer solution discharged from the polymer solution nozzle 31 collides with the upper surface of the substrate W rotating at the polymer solution supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force, and is scattered from the outer periphery of the substrate W to the periphery of the substrate W. As a result, the polymer solution is supplied to the entire upper surface of the substrate W, and a liquid film of the polymer solution is formed that covers the entire upper surface of the substrate W. When the polymer solution nozzle 31 is discharging the polymer solution, the nozzle moving unit 31m may move the collision position of the polymer solution against the upper surface of the substrate W so that the collision position passes through the center and the outer periphery, or may stop the collision position at the center. The same applies to the processing liquid supplied to the upper surface of the substrate W after the polymer solution.

[0077] Next, a polymer film forming step (step S4 in FIG. 5) is performed in which the liquid film of the polymer solution on the substrate W is transformed into a solid or semi-solid polymer film 80 (see FIG. 7A).

[0078] Specifically, when at least one guard 24 is located at the upper position and the polymer solution nozzle 31 stops discharging the polymer solution, the spin motor 14 maintains the rotation speed of the substrate W at the film formation speed. The film formation speed may be equal to or different from the polymer solution supply speed. The polymer solution on the substrate W is discharged outward from the substrate W by centrifugal force even after the discharging of the polymer solution is stopped. Therefore, the thickness of the liquid film of the polymer solution on the substrate W decreases. When the polymer solution on the substrate W is discharged to a certain extent, the amount of the polymer solution discharged from the substrate W per unit time decreases to zero or approximately zero. As a result, the thickness of the liquid film of the polymer solution on the substrate W stabilizes at a value according to the rotation speed of the substrate W with the entire upper surface of the substrate W covered with the liquid film of the polymer solution.

[0079] With the spin motor 14 rotating the substrate W at the film formation speed, the heating fluid valve 71v is opened and the lower surface nozzle 71 starts to eject hot water. The hot water ejected from the lower surface nozzle 71 collides with the lower surface of the substrate W rotating at the film formation speed, and then flows outward along the lower surface of the substrate W. In this way, hot water is supplied to the entire lower surface of the substrate W. When a predetermined time has elapsed since the heating fluid valve 71v was opened, the heating fluid valve 71v is closed and the ejection of hot water is stopped. The ejection of hot water may be started before the ejection of the polymer solution is stopped, or may be started before the ejection of the polymer solution is started.

[0080] The concentration of the solvent in the polymer solution on the substrate W (the concentration of water when the polymer solution is an aqueous polymer solution) gradually decreases due to the evaporation of the solvent. As the spin motor 14 rotates the substrate W, an air current that promotes the evaporation of the solvent is formed above the substrate W. The downflow of clean air flowing from the FFU 6 (see FIG. 2) also promotes the evaporation of the solvent. In addition, heat supplied from the hot water to the substrate W is transferred to the polymer solution, further promoting the evaporation of the solvent. While the solvent evaporates from the polymer solution, the polymer, which is the solute, does not evaporate or barely evaporates. Therefore, as the solvent evaporates from the polymer solution, the concentration of the polymer in the polymer solution gradually increases.

[0081] When the polymer concentration reaches or exceeds the saturation concentration, the liquid film of the polymer solution covering the entire upper surface of the substrate W changes into a solid or semi-solid polymer film 80 covering the entire upper surface of the substrate W, and the upper surface of the substrate W becomes dry or almost dry. When viewed in a direction perpendicular to the upper surface of the substrate W, the polymer film 80 is a circle having the same diameter as the substrate W and concentric with the substrate W (see FIG. 7D). When viewed in a direction perpendicular to the upper surface of the substrate W, the outer edge of the polymer film 80 overlaps the outer edge of the substrate W at any position. As will be described later, the polymer film 80 is peeled off from the substrate W by the pressure of the peeling gas. As long as the polymer film 80 peeled off from the substrate W does not separate, the polymer film 80 may be in a state containing a lot of solvent, such as a gel.

[0082] When the liquid film of the polymer solution changes into the polymer film 80, particles in contact with the liquid film of the polymer solution are captured by the polymer film 80, and movement relative to the polymer film 80 is restricted. The supply of hot water to the lower surface of the substrate W is continued even after the polymer film 80 is formed. As a result, the solvent further evaporates from the polymer film 80, causing the polymer film 80 to shrink. The force of the shrinkage of the polymer film 80 tries to peel off the particles taken in by the polymer film 80 from the substrate W. As a result, unwanted substances such as particles are peeled off from the substrate W, or become easier to peel off from the substrate W.

[0083] Next, a polymer film peeling step (step S5 in FIG. 5) is performed in which a peeling gas is discharged toward the upper surface of the substrate W to peel off the polymer film 80 from the substrate W.

[0084] Specifically, in a state where at least one guard 24 is located at the upper position and the spin motor 14 rotates the substrate W at the peeling speed, the nozzle moving unit 33m moves the peeling gas nozzle 33 from the standby position to the processing position. Then, the opening and closing valve 33v is opened, and the peeling gas nozzle 33 starts discharging the peeling gas. When a predetermined time has elapsed since the opening and closing valve 33v was opened, the opening and closing valve 33v is closed, and the discharge of the peeling gas is stopped. Then, the nozzle moving unit 33m moves the peeling gas nozzle 33 to the standby position. The peeling speed may be equal to or different from the polymer solution supply speed. As will be described later, when the peeling gas nozzle 33 discharges the peeling gas toward the upper surface of the substrate W covered with the polymer film 80, the polymer film 80 that is in close contact with the entire upper surface of the substrate W is peeled off from the substrate W and removed from the substrate W.

[0085] Next, a rinsing liquid supplying step (step S6 in FIG. 5) is performed in which pure water, which is an example of a rinsing liquid, is supplied to the upper surface of the substrate W.

[0086] Specifically, with at least one guard 24 in the upper position, the nozzle moving unit 32m moves the rinsing liquid nozzle 32 from the standby position to the processing position. Thereafter, with the spin motor 14 rotating the substrate W at the rinsing liquid supply speed, the rinsing liquid valve 32v is opened and the rinsing liquid nozzle 32 starts to discharge pure water. Before the discharge of pure water starts, the guard lifting unit 27 may vertically move at least one guard 24 to switch the guard 24 that receives the liquid discharged from the substrate W.

[0087] The pure water discharged from the rinsing liquid nozzle 32 collides with the upper surface of the substrate W rotating at the rinsing liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force, and is scattered from the outer periphery of the substrate W to the surroundings of the substrate W. As a result, a liquid film of pure water is formed that covers the entire upper surface of the substrate W. If any unwanted matter remains on the substrate W, such as fragments of the polymer film 80, the unwanted matter is washed away by the pure water. When a predetermined time has elapsed since the rinsing liquid valve 32v was opened, the rinsing liquid valve 32v is closed, and the discharge of the pure water is stopped. Thereafter, the nozzle moving unit 32m moves the rinsing liquid nozzle 32 to the standby position.

[0088] Next, a drying step (step S7 in FIG. 5) is performed in which the substrate W is dried by rotating the substrate W at high speed.

[0089] Specifically, the spin motor 14 accelerates the substrate W in a rotation direction Dr (see FIG. 7A) to rotate the substrate W at a high rotation speed (e.g., several thousand rpm) that is higher than the rotation speed of the substrate W from the polymer solution supply step to the rinsing liquid supply step. When the spin motor 14 starts rotating the substrate W at high speed, the liquid is splashed outward from the substrate W and removed from the substrate W, thereby drying the substrate W. When a predetermined time has elapsed since the substrate W started to rotate at high speed, the spin motor 14 stops rotating. This stops the rotation of the substrate W (step S8 in FIG. 5).

[0090] Next, an unloading step (step S9 in FIG. 5) of unloading the substrate W from the chamber 4 is performed.

[0091] Specifically, the guard lifting unit 27 lowers all of the guards 24 to the lower position. Thereafter, the center robot CR causes the hand Hc to enter the chamber 4. After the multiple chuck pins 11 release the grip of the substrate W, the center robot CR supports the substrate W on the spin chuck 10 with the hand Hc. Thereafter, the center robot CR withdraws the hand Hc from inside the chamber 4 while still supporting the substrate W horizontally with the hand Hc. As a result, the processed substrate W is carried out from the chamber 4.

[0092] Next, the polymer film peeling step will be described in more detail.

[0093] Fig. 6 is a time chart showing an example of changes in the flow rate of the stripping gas when the polymer film stripping process is being performed. Figs. 7A to 7G are schematic views showing the substrate W when the polymer film stripping process is being performed. Fig. 7H is a schematic view showing the substrate W when the rinsing liquid supplying process is being performed. Fig. 8 is a schematic plan view of the substrate W showing the non-device formation region R1 and the device formation region R2. The multiple circles in the square frame in Fig. 7B represent particles. Below, reference will be made to Fig. 2.

[0094] In the above-mentioned polymer film peeling process, with at least one guard 24 in the upper position and the spin motor 14 rotating the substrate W at the peeling speed, the nozzle actuator 33a moves the peeling gas nozzle 33 from the standby position to the first discharge position P1 (see FIG. 7A). As shown in FIG. 6, at time T1, with the peeling gas nozzle 33 in the first discharge position P1, the opening / closing valve 33v is opened and the peeling gas nozzle 33 starts discharging the peeling gas. When the opening / closing valve 33v is opened, the opening degree of the flow rate control valve 33f is a first opening degree, and the flow rate of the peeling gas discharged from the peeling gas nozzle 33 is a first speed.

[0095] As shown in FIG. 6, at time T2, the aperture of the flow rate control valve 33f is reduced from the first aperture to the second aperture. This causes the flow rate of the separation gas discharged from the separation gas nozzle 33 to decrease from the first velocity to the second velocity. Then, the nozzle actuator 33a moves the separation gas nozzle 33 from the first discharge position P1 to the second discharge position P2. Then, at time T3, the opening / closing valve 33v is closed, and the separation gas nozzle 33 stops discharging the separation gas. Then, the nozzle actuator 33a moves the separation gas nozzle 33 from the second discharge position P2 to the standby position. The aperture of the flow rate control valve 33f is returned to the first aperture after the opening / closing valve 33v is closed.

[0096] As shown in FIG. 7A, the separation gas discharged from the separation gas nozzle 33 collides with the polymer film 80 at the collision position, and then flows radially from the collision position along the surface of the polymer film 80. The collision position is a circular region where the separation gas discharged from the separation gas nozzle 33 first collides with the upper surface of the substrate W or the upper surface of the polymer film 80. The diameter of the collision position is smaller than the radius of the substrate W. The diameter of the collision position may be equal to or smaller than the outer diameter of the separation gas nozzle 33, or may be larger than the outer diameter of the separation gas nozzle 33. The diameter of the collision position may be a value that allows the entire collision position to be located within the non-device formation region R1 (see FIG. 8), or may be any other value. The collision position may be a region other than a circle, such as a linear shape.

[0097] The force applied to the polymer film 80 by the peeling gas is the largest at the collision position. The polymer film 80 is pressed against the substrate W by the pressure of the peeling gas. As shown in FIG. 7B, the thickness of the polymer film 80 is locally reduced at the collision position. As shown in FIG. 7C, the peeling gas breaks the polymer film 80 at the collision position, forming a through hole 81 penetrating the polymer film 80 in the thickness direction of the polymer film 80. The through hole 81 is a hole surrounded by an edge 80e of the polymer film 80. The edge 80e of the polymer film 80 corresponds to the outer periphery of the through hole 81. The through hole 81 may be surrounded by the polymer film 80 over the entire periphery of the through hole 81, or may be open at the outer edge of the polymer film 80.

[0098] 7A, the separation gas nozzle 33 starts discharging the separation gas while stationary at a first discharge position P1 where the separation gas is sprayed onto the upper surface of the substrate W between the center of the substrate W and the outer periphery of the substrate W. Since the separation gas nozzle 33 is stationary, the absolute position of the separation gas nozzle 33 does not change. However, since the substrate W is rotating, the collision position with the upper surface of the substrate W rotates around the rotation center of the substrate W with respect to the substrate W. Therefore, the thickness of the polymer film 80 is locally reduced on a circle concentric with the substrate W. When the thickness of the polymer film 80 on this circle is reduced to a certain extent, a through hole 81 is formed. The through hole 81 may be a linear cut extending in the circumferential direction of the substrate W.

[0099] As shown in FIG. 7C, when the through-hole 81 is formed in the polymer film 80, a part of the upper surface of the substrate W is exposed from the polymer film 80 at the through-hole 81. Furthermore, the polymer film 80 peels off from the substrate W around the through-hole 81, and a gap is formed between the polymer film 80 and the substrate W. That is, the polymer film 80 changes from a state in which it is in close contact with the entire upper surface of the substrate W to a state in which it is partially peeled off from the upper surface of the substrate W. As a result, the polymer film 80 is morphologically divided into a peeled portion 82 peeled off from the upper surface of the substrate W and an adhered portion 83 in close contact with the upper surface of the substrate W. In other words, the polymer film 80 changes from a state in which the entire polymer film 80 is the adhered portion 83 to a state including the peeled portion 82 and the adhered portion 83.

[0100] The polymer film 80 is broken by the pressure of the peeling gas so that the polymer film 80 is made up of a peeled portion 82 peeled off from the upper surface of the substrate W and an adhesive portion 83 integral with the peeled portion 82 and adhesively attached to the upper surface of the substrate W. The peeled portion 82 is a part of the polymer film 80, and the adhesive portion 83 is the remaining part of the polymer film 80. The lower surface of the adhesive portion 83 is adhesively attached to the upper surface of the substrate W. The upper surface of the adhesive portion 83 is in contact with the atmosphere in the space in which the substrate W is placed. The upper surface of the adhesive portion 83 is continuous with the upper surface of the peeled portion 82, and the lower surface of the adhesive portion 83 is continuous with the lower surface of the peeled portion 82. The peeled portion 82 is a part or the whole of the polymer film 80 whose bond with the substrate W has been cut off. After peeling off from the substrate W, the peeled portion 82 may be in contact with the upper surface of the substrate W or may be separated from the upper surface of the substrate W.

[0101] Immediately after the through-hole 81 is formed, the polymer film 80 is in contact with most of the upper surface of the substrate W, and the polymer film 80 is peeled off only from an extremely narrow range around the through-hole 81. The peeling gas enters between the polymer film 80 and the substrate W through the through-hole 81, and applies a peeling force to the polymer film 80 that peels the polymer film 80 off from the substrate W. This peeling force causes the polymer film 80 to be further peeled off from the substrate W. Specifically, the peeling gas that has entered between the polymer film 80 and the substrate W pushes the boundary 84 (see FIG. 7C ) between the peeled portion 82 and the adhered portion 83 toward the adhered portion 83, forming a new peeled portion 82. Strictly speaking, the adhered portion 83 changes into the new peeled portion 82.

[0102] The peeling gas that has entered between the polymer film 80 and the substrate W from the through hole 81 spreads in a semicircular shape from the outer periphery of the through hole 81. Therefore, a new semicircular peeled portion 82 whose center is located near the outer periphery of the through hole 81 is formed outside the through hole 81. Immediately after the through hole 81 is formed, such a plurality of semicircular peeled portions 82 are formed all around or almost all around the through hole 81, and the plurality of semicircular peeled portions 82 are connected to each other. Therefore, immediately after the through hole 81 is formed, an annular peeled portion 82 is formed that spreads outward from the entire or almost entire circumference of the through hole 81.

[0103] After the annular peeled portion 82 surrounding the through-hole 81 is formed, the peeling gas that has entered between the polymer film 80 and the substrate W spreads in a semicircular shape from the outer periphery of the annular peeled portion 82. Therefore, at least one new semicircular peeled portion 82 is formed outside the annular peeled portion 82. By repeating the same phenomenon, the adhesion portion 83 changes into the peeled portion 82, and the peeled portion 82 becomes larger. When the area of ​​the peeled portion 82 exceeds the area of ​​the adhesion portion 83 and the entire adhesion portion 83 changes into the peeled portion 82, the entire polymer film 80 is peeled off from the upper surface of the substrate W.

[0104] 7D shows the through hole 81 immediately after it is formed. The peeling gas impinges on the polymer film 80 between the center of the substrate W and the outer periphery of the substrate W. If the through hole 81 is not open at the outer periphery of the substrate W and is surrounded by the polymer film 80, the peeling portion 82 spreads from the through hole 81 to the outer periphery of the substrate W on the opposite side of the through hole 81 from the center of the substrate W. This causes the polymer film 80 to peel off from a part of the outer periphery of the substrate W. If the peeling portion 82 does not reach the outer periphery of the substrate W, the peeling gas nozzle 33 may be moved away from the center of the substrate W to spread the peeling portion 82 to the outer periphery of the substrate W.

[0105] FIG. 7E shows the through hole 81 that is larger than the original. The force of rotating the substrate W presses the polymer film 80 against the stripping gas that has entered between the polymer film 80 and the substrate W in the rotation direction Dr of the substrate W. In other words, the force of rotating the substrate W tries to spread the peeling portion 82 in the opposite direction to the rotation direction Dr of the substrate W. As shown in FIG. 7E, the peeling portion 82 spreads in the opposite direction to the rotation direction Dr of the substrate W at a speed greater than the speed at which the peeling portion 82 spreads in the rotation direction Dr of the substrate W. Therefore, not only the pressure of the stripping gas but also the force of rotating the substrate W peels the polymer film 80 off the substrate W. This promotes the peeling of the polymer film 80.

[0106] The separation gas nozzle 33 starts discharging the separation gas at a first discharge position P1 where the separation gas is sprayed onto the upper surface of the substrate W between the center of the substrate W and the outer periphery of the substrate W. Thereafter, the nozzle actuator 33a horizontally moves the separation gas nozzle 33 located at the first discharge position P1 to a second discharge position P2 (see FIG. 7G) to change the distance from the center of the substrate W to the collision position of the separation gas. FIG. 7F shows the separation gas nozzle 33 moving toward the second discharge position P2. Regardless of where the separation gas nozzle 33 is located on the path from the first discharge position P1 to the second discharge position P2, the separation gas discharged from the separation gas nozzle 33 is sprayed onto the upper surface of the substrate W through or without passing through the polymer film 80.

[0107] When the separation gas nozzle 33 is disposed at a first discharge position P1 indicated by a two-dot chain line in Fig. 7F, the separation gas discharged from the separation gas nozzle 33 first collides with a first collision position Q1 in the upper surface of the substrate W, and flows radially from the first collision position Q1 along the upper surface of the substrate W. Similarly, when the separation gas nozzle 33 is disposed at a second discharge position P2 indicated in Fig. 7G, the separation gas discharged from the separation gas nozzle 33 first collides with a second collision position Q2 in the upper surface of the substrate W, and flows radially from the second collision position Q2 along the upper surface of the substrate W.

[0108] The first discharge position P1 is a position where the separation gas is sprayed onto or near the outer periphery of the substrate W. The second discharge position P2 may be a central position where the separation gas is sprayed onto or near the center of the substrate W, or may be an outer periphery position where the separation gas is sprayed onto or near the outer periphery of the substrate W, or may be an intermediate position between the central position and the outer periphery position. The nozzle actuator 33a may horizontally reciprocate the separation gas nozzle 33 one or more times between two positions such as the first discharge position P1 and the second discharge position P2.

[0109] The nozzle actuator 33a may maintain the moving speed of the stripping gas nozzle 33 constant or may change it. In the latter case, the nozzle actuator 33a may move the stripping gas nozzle 33 so that at least one of an acceleration period, a deceleration period, and a stationary period occurs, or may move the stripping gas nozzle 33 so that at least one of an acceleration period, a deceleration period, and a stationary period and a constant speed period occur.

[0110] The acceleration period is a period during which the moving speed of the separation gas nozzle 33 increases stepwise or continuously as the collision position of the separation gas approaches the center of the substrate W. The deceleration period is a period during which the moving speed of the separation gas nozzle 33 decreases stepwise or continuously as the collision position of the separation gas approaches the center of the substrate W. The stationary period is a period during which the separation gas nozzle 33 is stationary. The constant speed period is a period during which the separation gas nozzle 33 moves at a constant speed.

[0111] As shown in FIG. 7F, when the peeling gas nozzle 33 moves from the first discharge position P1, the collision position of the peeling gas against the substrate W approaches the center of the substrate W and approaches the boundary 84 between the peeling portion 82 and the adhesion portion 83. This increases the pressure of the peeling gas applied to the boundary 84 between the peeling portion 82 and the adhesion portion 83, and the polymer film 80 is further peeled off. In other words, a new peeling portion 82 is formed and spreads toward the center of the substrate W. The peeling gas that has entered between the polymer film 80 and the substrate W flows from the new peeling portion 82 toward the center of the substrate W (toward the center of the substrate W) and in the circumferential direction. As shown in FIG. 7E, this phenomenon occurs as the collision position of the peeling gas approaches the center of the substrate W, and the peeling portion 82 becomes larger toward the center and in the circumferential direction of the substrate W.

[0112] When the peeling gas nozzle 33 moves from the first discharge position P1, a force is applied from the peeling gas to the polymer film 80 to expand the edge 80e of the polymer film 80 forming the through hole 81, and the edge 80e of the polymer film 80 may tear. In this case, one or more cuts are formed in the polymer film 80 that open at the edge 80e of the polymer film 80. As shown in FIG. 7E, when multiple cuts are formed in the polymer film 80, the peeling portion 82 located between two cuts may be turned up from the substrate W and placed on the adhesion portion 83 with the front and back sides inverted. The peeling gas is blown onto the inverted peeling portion 82 on the adhesion portion 83, applying a force to the peeling portion 82. This force is transmitted to the adhesion portion 83 via the peeling portion 82, further peeling off the polymer film 80. This causes the peeling portion 82 to become even larger.

[0113] As shown in FIG. 7G, when the collision position of the peeling gas with respect to the substrate W is moved while ejecting the peeling gas toward the upper surface of the substrate W, the entire adhesion portion 83 changes into a peeling portion 82, and the entire polymer film 80 is peeled off from the substrate W. The polymer film 80 may be peeled off from the substrate W in a state in which the entire polymer film 80 is connected, or may be peeled off from the substrate W in a state in which the polymer film 80 is divided into a plurality of pieces. The ejection of the peeling gas and the rotation of the substrate W are continued even after the entire polymer film 80 is peeled off from the substrate W. The polymer film 80 remaining on the substrate W after being peeled off from the substrate W is scattered from the substrate W by the force of at least one of the peeling gas and the substrate W. As a result, the polymer film 80 holding the particles is removed from the substrate W.

[0114] As shown in FIG. 7H, after the polymer film 80 is removed from the substrate W, a rinse liquid such as pure water is discharged toward the upper surface of the substrate W while rotating the substrate W (rinsing liquid supplying step). If any unwanted matter such as fragments of the polymer film 80 remains on the substrate W, the unwanted matter is washed away by the rinse liquid and splashes together with the rinse liquid from the outer periphery of the substrate W to the surroundings of the substrate W. The rinse liquid splashed from the substrate W is received by the inner peripheral surface of the guard 24, and then flows downward along the inner peripheral surface of the guard 24. The rinse liquid then enters the cup 23 (see FIG. 2) and is discharged from the cup 23 through the drainage port of the cup 23.

[0115] When the through-hole 81 is formed in the polymer film 80, the polymer film 80 may tear, generating fragments of the polymer film 80. Fragments of the polymer film 80 may also be generated when the peeled portion 82 spreads from the through-hole 81, or when a linear cut opening at the edge 80e of the polymer film 80 is formed in the polymer film 80. Such fragments of the polymer film 80 are subjected to force from the peeling gas or the rotating substrate W and are scattered to the inner circumferential surface of the guard 24. If fragments of the polymer film 80 remain on the substrate W, the fragments are washed away by the rinsing liquid and removed from the substrate W. As a result, the fragments of the polymer film 80 are removed from the substrate W.

[0116] The polymer film 80 that has been peeled off from the substrate W and scattered from the substrate W is received by the inner peripheral surface of the guard 24, and then falls downward into the space inside the guard 24. If the polymer film 80 that has been scattered from the substrate W does not fall to the cup 23 but remains inside the guard 24, the polymer film 80 comes into contact with the rinsing liquid that has been scattered from the substrate W and dissolves in the rinsing liquid. As a result, the polymer film 80 becomes smaller or breaks into multiple pieces, and falls into the cup 23. The polymer film 80 in the cup 23 dissolves in the rinsing liquid in the cup 23, or changes into even smaller pieces upon contact with the rinsing liquid, and is then discharged from the cup 23 together with the rinsing liquid through the drainage port of the cup 23.

[0117] As shown in FIG. 6, when the separation gas nozzle 33 starts discharging the separation gas at the first discharge position P1, the opening degree of the flow rate control valve 33f is the first opening degree. When a predetermined time has elapsed since the opening of the opening / closing valve 33v is opened, the opening degree of the flow rate control valve 33f is reduced from the first opening degree to the second opening degree. This reduces the flow rate of the separation gas supplied to the separation gas nozzle 33, and the pressure applied from the separation gas to the upper surface of the substrate W decreases from the first pressure to the second pressure. After the opening degree of the flow rate control valve 33f is reduced from the first opening degree to the second opening degree, the nozzle actuator 33a moves the separation gas nozzle 33 from the first discharge position P1 to the second discharge position P2. Therefore, in a state in which the pressure applied from the separation gas to the upper surface of the substrate W is reduced, the collision position of the separation gas with the substrate W moves within the upper surface of the substrate W.

[0118] When the through-hole 81 is formed in the polymer film 80, the opening degree of the flow rate control valve 33f is the first opening degree, which is greater than the second opening degree, and the pressure applied from the peeling gas to the upper surface of the substrate W is the first pressure, which is greater than the second pressure. Therefore, compared to the case where the pressure applied from the peeling gas to the upper surface of the substrate W is the second pressure, the through-hole 81 can be formed reliably in a short time. On the other hand, when the collision position of the peeling gas with respect to the upper surface of the substrate W is moving, the opening degree of the flow rate control valve 33f is the second opening degree. After the through-hole 81 is formed in the polymer film 80, the peeling gas is between the polymer film 80 and the substrate W, so that even if the pressure applied from the peeling gas to the upper surface of the substrate W is reduced, the polymer film 80 can be peeled off by the pressure of the peeling gas. Therefore, compared to the case where the pressure applied from the peeling gas to the upper surface of the substrate W is continuously maintained at the first pressure, the peeling portion 82 can be expanded while reducing the consumption of the peeling gas.

[0119] The polymer film peeling step may be performed after devices such as transistors and patterns PA (see FIG. 7B) are formed on the substrate W, or may be performed before the devices and patterns PA are formed on the substrate W. In the former case, as shown in FIG. 8, the first discharge position P1 of the stripping gas nozzle 33 may be set so that a first collision position Q1 where the stripping gas first collides with the substrate W is located within the non-device formation region R1.

[0120] The device formation region R2 and the non-device formation region R1 are both regions within the surface of the substrate W that corresponds to the device formation surface. In FIG. 8, the outer edge of the device formation region R2 is indicated by a thick line. The device formation region R2 is a region in which devices such as transistors and patterns PA are formed. The non-device formation region R1 is a region in which devices and patterns PA are not formed. The non-device formation region R1 is a ring-shaped region around the device formation region R2. The first collision position Q1 may be a position within the device formation region R2. The second collision position Q2 may be a position within the device formation region R2 or may be a position within the non-device formation region R1. FIG. 8 shows an example of the latter.

[0121] When the first collision position Q1 is located within the non-device formation region R1, the relatively high-pressure separation gas collides with the non-device formation region R1. As described above, the nozzle actuator 33a moves the separation gas nozzle 33 from the first discharge position P1 to the second discharge position P2 after the aperture of the flow rate control valve 33f is reduced from the first aperture to the second aperture. Therefore, in a state in which the pressure of the separation gas colliding with the non-device formation region R1 is reduced, the collision position of the separation gas with the upper surface of the substrate W moves from the non-device formation region R1 to the device formation region R2. This allows the polymer film 80 to be peeled off in a state in which the force applied from the separation gas to the device formation region R2 is reduced.

[0122] Next, the effects of this embodiment will be described.

[0123] In this embodiment, the peeling gas is discharged from the peeling gas nozzle 33 at a relatively high first speed toward the upper surface of the substrate W covered with a solid or semi-solid polymer film 80. Since the speed of the peeling gas is relatively high, a relatively high pressure is applied from the peeling gas to the polymer film 80. As a result, the polymer film 80 is broken and separated into a peeling portion 82 and a contact portion 83. The peeling gas enters between the peeling portion 82 and the substrate W. Then, the peeling gas is discharged from the peeling gas nozzle 33 at a relatively low second speed. The boundary 84 between the peeling portion 82 and the contact portion 83 is pushed toward the contact portion 83 by the peeling gas that has entered between the peeling portion 82 and the substrate W. As a result, the contact portion 83 is peeled off from the substrate W and changes into the peeling portion 82.

[0124] The nozzle actuator 33a moves the stripping gas nozzle 33 horizontally to change the distance from the collision position of the stripping gas with the upper surface of the substrate W to the center of the substrate W. The force applied from the stripping gas to the polymer film 80 is greatest at the collision position. Therefore, by moving the stripping gas nozzle 33 horizontally, it is possible to promote the change from the adhesion portion 83 to the stripping portion 82.

[0125] In this manner, the polymer film 80 is peeled off from the substrate W by the stripping gas and the nozzle actuator 33a. Therefore, the polymer film 80 can be peeled off from the substrate W without using any liquid such as a stripping solution. Furthermore, since the stripping gas is discharged at a relatively high first speed, the polymer film 80 can be reliably broken in a short time. After the polymer film 80 is broken, the flow rate of the stripping gas is reduced to the second speed, so that the amount of stripping gas used can be reduced compared to the case where the flow rate of the stripping gas is continuously maintained at the first speed. This allows the amount of energy consumed to process the substrate W to be reduced.

[0126] In this embodiment, the separation gas is discharged at a first speed from the separation gas nozzle 33 located at a first discharge position P1. The first discharge position P1 is a position where the separation gas discharged from the separation gas nozzle 33 collides with a non-device formation region R1 in the upper surface of the substrate W. Therefore, the polymer film 80 can be broken by the pressure of the separation gas while preventing the pressure of the separation gas from being applied to at least one of the device and the pattern PA formed in the device formation region R2.

[0127] After the flow rate of the separation gas is reduced to the second speed, the nozzle actuator 33a moves the separation gas nozzle 33 toward the second discharge position P2. The position between the first discharge position P1 and the second discharge position P2 is a position where the separation gas discharged from the separation gas nozzle 33 collides with the device formation region R2 in the upper surface of the substrate W. Therefore, the polymer film 80 can be further peeled off from the substrate W while preventing a strong force from being applied to at least one of the device and the pattern PA formed in the device formation region R2.

[0128] In this embodiment, after the polymer film 80 is peeled off from the upper surface of the substrate W, a rinse liquid is discharged toward the upper surface of the substrate W. If the polymer film 80 itself or small pieces of the polymer film 80 remain on the upper surface of the substrate W, the polymer film 80 on the substrate W is washed away by the rinse liquid. The polymer film 80 is a solid or semi-solid film containing a water-soluble polymer. The rinse liquid is a liquid containing water. Even if the polymer film 80 remains on the substrate W without being washed away by the rinse liquid, the polymer film 80 dissolves in the rinse liquid and is discharged from the substrate W together with the rinse liquid. This makes it possible to reduce the polymer film 80 remaining on the upper surface of the substrate W.

[0129] In this embodiment, the polymer film 80 that is peeled off from the upper surface of the substrate W due to the pressure of the stripping gas and scattered from the upper surface of the substrate W to the periphery of the substrate W is received by the guard 24 positioned around the substrate W. Similarly, the rinsing liquid that is supplied to the upper surface of the substrate W and scattered from the upper surface of the substrate W to the periphery of the substrate W is received by the guard 24 positioned around the substrate W. If the polymer film 80 itself or small pieces of the polymer film 80 remain inside the guard 24, the polymer film 80 comes into contact with the rinsing liquid scattered from the substrate W and is dissolved in the rinsing liquid. This makes it possible to remove the polymer film 80 from inside the guard 24.

[0130] In this embodiment, a solid or semi-solid film containing a water-soluble polymer is adhered to the upper surface of the substrate W having a water contact angle of 32 degrees or more. The water contact angle is one of the indices that indicate the degree of hydrophilicity. Since the water contact angle is 32 degrees or more and the hydrophilicity of the upper surface of the substrate W is not high, the affinity of the polymer film 80 to the upper surface of the substrate W is not high. Therefore, the polymer film 80 is easier to peel off from the substrate W than when the affinity of the polymer film 80 to the upper surface of the substrate W is high. This can reduce fragments of the polymer film 80 that remain on the substrate W without being peeled off from the substrate W.

[0131] In this embodiment, the polymer solution is discharged toward the upper surface of the substrate W. As a result, a liquid film of the polymer solution is formed on the substrate W. Heat from the heater 71h, which is an example of a heat source, is transferred to this liquid film. This promotes evaporation of the solvent, and the liquid film of the polymer solution changes into a solid or semi-solid polymer film 80. Furthermore, when the solvent evaporates from the polymer solution, the polymer film 80 shrinks, and a force is generated that peels off the particles taken into the polymer film 80 from the substrate W. If the polymer film 80 is peeled off and removed from the substrate W, the particles are also removed from the substrate W. This makes it possible to reduce the number of particles remaining on the substrate W.

[0132] In this embodiment, by discharging a peeling gas toward the upper surface of the substrate W, the polymer film 80 is peeled off from the upper surface of the substrate W in its entirety without being separated. In other words, the polymer film 80 is peeled off from the upper surface of the substrate W in its entirety without generating fragments of the polymer film 80. The polymer film 80 peeled off from the substrate W is torn but not broken into pieces. When the polymer film 80 peeled off from the substrate W is removed, no fragments of the polymer film 80 remain on the substrate W. Therefore, the polymer film 80 peeled off from the substrate W can be easily removed in its entirety from the substrate W.

[0133] In this embodiment, the separation gas nozzle 33 is caused to eject the separation gas at a first speed, and then the separation gas nozzle 33 is caused to eject the separation gas at a second speed. The separation gas nozzle 33 is a variable aperture nozzle whose opening area changes depending on the flow rate of the separation gas supplied to the separation gas nozzle 33. If the opening area of ​​the separation gas nozzle 33, that is, the area of ​​the outlet of the separation gas nozzle 33, is constant, the flow rate of the separation gas ejected from the outlet of the separation gas nozzle 33 is directly proportional to the flow rate of the separation gas supplied to the separation gas nozzle 33.

[0134] When the flow rate of the separation gas supplied to the separation gas nozzle 33 increases, the opening area of ​​the separation gas nozzle 33 decreases. Therefore, compared to when the opening area of ​​the separation gas nozzle 33 is constant, the flow rate of the separation gas can be increased, and the pressure of the separation gas applied to the substrate W and the polymer film 80 can be increased. Conversely, when the flow rate of the separation gas supplied to the separation gas nozzle 33 decreases, the opening area of ​​the separation gas nozzle 33 increases. Therefore, the decrease in pressure of the separation gas generated at the outlet of the separation gas nozzle 33 can be reduced, and the energy of the separation gas supplied to the separation gas nozzle 33 can be efficiently utilized.

[0135] In this embodiment, a separation gas nozzle 33, which is an example of an aperture variable nozzle, includes an outer tube 34, an inner tube 35, and an elastic body 36. When the flow rate of the separation gas supplied to the outer tube 34 increases to a first flow rate, the elastic body 36 elastically deforms into a first shape. When the flow rate of the separation gas decreases from the first flow rate to a second flow rate, the elastic body 36 returns to a second shape. The first shape is a shape in which the tip opening 35o of the inner tube 35 is disposed outside the outer tube 34 with the inner tube 35 inserted into the discharge port 34o of the outer tube 34. The second shape is a shape in which the entire inner tube 35 is disposed inside the outer tube 34.

[0136] When the elastic body 36 is in the first shape, the separation gas supplied to the outer tube 34 exits the separation gas nozzle 33 from the tip opening 35o of the inner tube 35. When the elastic body 36 is in the second shape, the separation gas supplied to the outer tube 34 exits the separation gas nozzle 33 from the discharge port 34o of the outer tube 34. Therefore, when the elastic body 36 is in the first shape, the tip opening 35o of the inner tube 35 is the exit for the separation gas, and the area of ​​the tip opening 35o corresponds to the opening area of ​​the separation gas nozzle 33. When the elastic body 36 is in the second shape, the discharge port 34o of the outer tube 34 is the exit for the separation gas, and the area of ​​the discharge port 34o corresponds to the opening area of ​​the separation gas nozzle 33.

[0137] If the tip opening 35o of the inner tube 35 is not smaller than the discharge port 34o of the outer tube 34, the tip opening 35o of the inner tube 35 cannot pass through the discharge port 34o of the outer tube 34. Therefore, the opening area of ​​the separation gas nozzle 33 when the elastic body 36 is in the first shape, i.e., the area of ​​the tip opening 35o of the inner tube 35, is smaller than the opening area of ​​the separation gas nozzle 33 when the elastic body 36 is in the second shape, i.e., the discharge port 34o of the outer tube 34. As a result, when the flow rate of the separation gas supplied to the separation gas nozzle 33 increases, the opening area of ​​the separation gas nozzle 33 can be reduced, and when the flow rate of the separation gas supplied to the separation gas nozzle 33 decreases, the opening area of ​​the separation gas nozzle 33 can be increased.

[0138] Next, another embodiment will be described.

[0139] Instead of using separation gas nozzle 33, which is an example of a variable aperture nozzle, a first separation gas nozzle that ejects separation gas at a first velocity and a second separation gas nozzle that ejects separation gas at a second velocity may be used.

[0140] When a first release gas nozzle and a second release gas nozzle are used, the first release gas nozzle may eject the release gas at a first speed, causing the second release gas nozzle to eject the release gas at a second speed toward through-hole 81 formed in polymer film 80. Then, the second release gas nozzle may be moved horizontally while being caused to eject the release gas at the second speed.

[0141] In addition to or instead of bringing a heating liquid having a temperature higher than room temperature into contact with the lower surface of the substrate W, evaporation of the solvent of the polymer solution may be promoted by ejecting a heating gas having a temperature higher than room temperature toward the upper or lower surface of the substrate W. In addition to or instead of transferring heat from the heating fluid to the polymer solution on the substrate W, heat from a hot plate disposed between the lower surface of the substrate W and the upper surface 12u of the spin base 12 may be transferred to the polymer solution on the substrate W. The hot plate is an example of a heat source.

[0142] In addition to or instead of directly or indirectly transferring heat from a heat source to the polymer solution on the substrate W, evaporation of the solvent of the polymer solution may be promoted by increasing the rotation speed of the substrate W. In addition to or instead of at least one of these, evaporation of the solvent of the polymer solution may be promoted by reducing the air pressure in the space in which the substrate W is disposed.

[0143] The substrate W may be unloaded from the chamber 4 without performing the rinsing liquid supplying step (step S6 in FIG. 5). The liquid film of the polymer solution may be changed into a polymer film 80 without supplying a heating liquid such as hot water to the underside of the substrate W. When the supply of the rinsing liquid and the supply of the heating liquid are not performed, the substrate W may be unloaded from the chamber 4 without performing the drying step (step S7 in FIG. 5).

[0144] The substrate processing apparatus 1 is not limited to an apparatus for processing a disk-shaped substrate W, but may be an apparatus for processing a polygonal substrate W.

[0145] Any two or more of the above mentioned features may be combined. Any two or more of the above mentioned steps may be combined.

[0146] Although the embodiments of the present invention have been described in detail, these are merely examples used to clarify the technical contents of the present invention, and the present invention should not be construed as being limited to these examples. The spirit and scope of the present invention are limited only by the appended claims. [Explanation of symbols]

[0147] 1: substrate processing apparatus, 10: spin chuck, 11: chuck pin, 12: spin base, 21: processing cup, 22: outer wall member, 23: cup, 24: guard, 31: polymer solution nozzle, 32: rinsing liquid nozzle, 33: stripping gas nozzle, 33a: nozzle actuator, 33f: flow rate control valve, 33m: nozzle moving unit, 33p: stripping gas piping, 33s: support arm, 33v: opening / closing valve, 34: outer tube, 34c: cone portion, 34i: inlet, 34o: outlet Outlet, 35: inner tube, 35o: tip opening, 36: elastic body, 37: fixing ring, 38: fixing arm, 71: bottom nozzle, 71h: heater, 71p: heating fluid piping, 71v: heating fluid valve, 80: polymer film, 80e: edge of polymer film, 81: through hole, 82: peeling portion, 83: adhesion portion, 84: boundary, P1: first discharge position, P2: second discharge position, PA: pattern, Q1: first collision position, Q2: second collision position, R1: non-device formation region, R2: device formation region, W: substrate

Claims

1. a substrate holder for horizontally holding a substrate having an upper surface covered with a solid or semi-solid polymer film; at least one release gas nozzle that ejects a release gas at a first speed toward the top surface of the substrate held by the substrate holder, thereby breaking the polymer film with a pressure of the release gas so that the polymer film is separated into a release portion peeled off from the top surface of the substrate and an adhesion portion in close contact with the top surface of the substrate, and then ejects the release gas at a second speed lower than the first speed toward the top surface of the substrate held by the substrate holder, thereby changing the adhesion portion into the release portion with the release gas that has entered between the release portion and the substrate; a nozzle actuator that changes a distance from a collision position of the stripping gas with the top surface of the substrate to a center of the substrate by horizontally moving the at least one stripping gas nozzle.

2. 2. The substrate processing apparatus of claim 1, wherein the nozzle actuator positions the at least one stripping gas nozzle at a first ejection position where the stripping gas collides with a non-device formation region in the upper surface of the substrate when the at least one stripping gas nozzle ejects the stripping gas at the first speed, and moves the at least one stripping gas nozzle to a position where the stripping gas collides with a device formation region in the upper surface of the substrate when the at least one stripping gas nozzle ejects the stripping gas at the second speed.

3. The polymer film is a solid or semi-solid film containing a water-soluble polymer, 3. The substrate processing apparatus according to claim 1, further comprising a rinse liquid nozzle that ejects a rinse liquid containing water toward the top surface of the substrate held by the substrate holder after the polymer film has been peeled off from the top surface of the substrate.

4. The substrate processing apparatus according to claim 3 , further comprising a cylindrical guard configured to receive the polymer film and the rinse liquid scattered around the substrate from the upper surface of the substrate held by the substrate holder.

5. The polymer film is a solid or semi-solid film containing a water-soluble polymer, The substrate processing apparatus according to claim 1 , wherein a contact angle of water with respect to the upper surface of the substrate is equal to or greater than 32 degrees.

6. a polymer solution nozzle that ejects a polymer solution toward the upper surface of the substrate held by the substrate holder; The substrate processing apparatus according to claim 1 , further comprising: a heat source that generates heat to change the liquid film of the polymer solution on the substrate into the polymer film.

7. 3 . The substrate processing apparatus of claim 1 , wherein the at least one stripping gas nozzle ejects the stripping gas toward the top surface of the substrate held by the substrate holder until the entire polymer film is peeled off from the top surface of the substrate without separation.

8. the at least one stripping gas nozzle is one stripping gas nozzle that discharges the stripping gas at the first velocity and one stripping gas nozzle that discharges the stripping gas at the second velocity; the substrate processing apparatus further includes a flow rate adjustment valve that changes a flow rate of the stripping gas supplied to the one stripping gas nozzle; 3. The substrate processing apparatus according to claim 1, wherein the one stripping gas nozzle is a variable aperture nozzle whose opening area decreases when the flow rate of the stripping gas supplied to the stripping gas nozzle increases and whose opening area increases when the flow rate of the stripping gas supplied to the stripping gas nozzle decreases.

9. the variable aperture nozzle includes an outer tube including an outlet port for discharging the separation gas, an inner tube including a tip opening for discharging the separation gas within the outer tube, and an elastic body supporting the inner tube within the outer tube, 9. The substrate processing apparatus of claim 8, wherein when the flow rate of the stripping gas supplied into the outer tube increases to a first flow rate, the elastic body elastically deforms into a first shape in which the tip opening of the inner tube is positioned outside the outer tube with the inner tube inserted into the outlet of the outer tube, and when the flow rate of the stripping gas supplied into the outer tube decreases from the first flow rate to a second flow rate, the elastic body returns to a second shape in which the entire inner tube is positioned inside the outer tube.

10. holding a substrate having a solid or semi-solid polymer film on its upper surface horizontally; a step of discharging a separation gas from at least one separation gas nozzle toward the upper surface of the substrate at a first speed, thereby breaking the polymer film with a pressure of the separation gas so that the polymer film is separated into a separation portion peeled from the upper surface of the substrate and an adhesion portion in close contact with the upper surface of the substrate; a step of moving the at least one stripping gas nozzle horizontally while causing the at least one stripping gas nozzle to eject the stripping gas toward the upper surface of the substrate at a second speed slower than the first speed, thereby changing the adhesion portion into the stripping portion by the stripping gas that has entered between the stripping portion and the substrate.

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