Manufacturing method of light-emitting device

Abstract

To provide a manufacturing method of a light-emitting device, capable of improving reliability when bonding a light-emitting element to a substrate.SOLUTION: A manufacturing method of a light-emitting device, comprises tha steps of; preparing a first support substrate that includes a first substrate and a semiconductor structure arranged onto an upper surface of the first substrate; forming an insulation film onto the semiconductor structure; forming a reflection film onto the insulation film; and forming a first bonding member and a second bonding member onto the reflection film. The reflection film includes: a center part arranged onto a center part of the semiconductor structure; and a peripheral part arranged onto a part of a circumference of the semiconductor structure. A thickness of the center part is thicker than that of the peripheral part. The first bonding member includes: a first end part positioned onto the center part of the reflection film; and a second end part positioned onto the peripheral part of the reflection film. The thickness of the first end part is thinner than that of the second end part.SELECTED DRAWING: Figure 21

Description

[Technical field]

[0001] The embodiment relates to a method for manufacturing a light emitting device. [Background technology]

[0002] In recent years, light emitting devices have been developed that have many miniaturized light emitting elements mounted on a single substrate. As the light emitting elements become smaller, it becomes more difficult to reliably bond the light emitting elements to the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2014-090001 A Summary of the Invention [Problem to be solved by the invention]

[0004] An object of one embodiment of the present invention is to provide a method for manufacturing a light emitting device that can improve reliability when bonding a light emitting element to a substrate. [Means for solving the problem]

[0005] A method for manufacturing a light-emitting device according to an embodiment of the present invention includes the steps of: preparing a first support substrate having a first substrate and a semiconductor structure disposed on an upper surface of the first substrate, the semiconductor structure including a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; forming an insulating film on the semiconductor structure; forming a reflective film on the insulating film; forming, on the reflective film, a first bonding member connected to the first semiconductor layer and a second bonding member connected to the second semiconductor layer and disposed apart from the first bonding member in a plan view; preparing a second support substrate having a second substrate and a first connection portion and a second connection portion disposed on an upper surface of the second substrate; and bonding the first bonding member to the first connection portion and the second bonding member to the second connection portion. The reflective film has a central portion disposed on a central portion of the semiconductor structure and a peripheral portion disposed on a peripheral portion of the semiconductor structure, and the thickness of the central portion is greater than the thickness of the peripheral portion. In the process of forming the first bonding member and the second bonding member, the first bonding member has a first end located on a central portion of the reflective film and a second end located on a peripheral portion of the reflective film, and the thickness of the first end is thinner than the thickness of the second end, and the second bonding member has a third end located on the central portion of the reflective film and a fourth end located on the peripheral portion of the reflective film, and the thickness of the third end is thinner than the thickness of the fourth end.

[0006] A method for manufacturing a light emitting device according to an embodiment of the present invention includes the steps of: preparing a first support substrate having a first substrate and a semiconductor structure disposed on an upper surface of the first substrate, the semiconductor structure including a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; forming an insulating film on the semiconductor structure; forming a reflective film on the insulating film; forming on the reflective film a plurality of first bonding members connected to the first semiconductor layer and a plurality of second bonding members connected to the second semiconductor layer and disposed apart from the first bonding members in a plan view; preparing a second support substrate having a second substrate and a first connection portion and a second connection portion disposed on an upper surface of the second substrate; and bonding the plurality of first bonding members to the first connection portion and the plurality of second bonding members to the second connection portion. The reflective film has a central portion disposed on a central portion of the semiconductor structure and a peripheral portion disposed on a peripheral portion of the semiconductor structure, and the thickness of the central portion is greater than the thickness of the peripheral portion. In the process of forming the first bonding member and the second bonding member, among the plurality of first bonding members, the thickness of the first bonding member arranged on the central portion of the reflective film is thinner than the thickness of the first bonding member arranged on the peripheral portion of the reflective film, and among the plurality of second bonding members, the thickness of the second bonding member arranged on the central portion of the reflective film is thinner than the thickness of the second bonding member arranged on the peripheral portion of the reflective film. Effect of the Invention

[0007] According to one embodiment of the present invention, it is possible to realize a method for manufacturing a light emitting device that can improve reliability when bonding a light emitting element to a substrate. [Brief description of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Diagram 2] 2A to 2C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Diagram 3] 3A to 3C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 4] 4A to 4C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Diagram 5] 5A to 5C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 6] 6A to 6C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 7] FIG. 7 is a plan view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 8] FIG. 8 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 9] FIG. 9 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 10] 10A to 10C are cross-sectional views illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 11] FIG. 11 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 12] FIG. 12 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 13] FIG. 13 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 14] FIG. 14 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 15] FIG. 15 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 16] FIG. 16 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 17] FIG. 17 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 18] FIG. 18 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 19] FIG. 19 is a cross-sectional view illustrating a method for manufacturing the light emitting device according to the first embodiment. [Figure 20]FIG. 20 is a plan view showing the light emitting element in the first embodiment. [Figure 21] FIG. 21 is a cross-sectional view taken along line XXI-XXI shown in FIG. [Figure 22] FIG. 22 is a cross-sectional view taken along line XXII-XXII shown in FIG. [Figure 23] FIG. 23 is a plan view showing a method for manufacturing the light emitting device according to the second embodiment. [Figure 24] FIG. 24 is a cross-sectional view showing a method for manufacturing the light emitting device according to the third embodiment. [Diagram 25] FIG. 25 is a cross-sectional view showing a method for manufacturing the light emitting device according to the third embodiment. [Figure 26] FIG. 26 is a plan view showing a method for manufacturing the light emitting device according to the third embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and are appropriately simplified and emphasized. For example, the relationship between the thickness and width of each part, the size ratio between parts, etc. are not necessarily the same as in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. Furthermore, in this specification and each drawing, elements similar to those already explained are given the same reference numerals, and detailed explanations are omitted as appropriate.

[0010] <First embodiment> 1 to 6 are cross-sectional views showing a method for manufacturing a light emitting device according to this embodiment. FIG. 7 is a plan view showing a method for manufacturing a light emitting device according to this embodiment. 7 shows the same step as in FIG. 6, and FIG. 6 is a cross-sectional view taken along line VI-VI shown in FIG. 8 to 19 are cross-sectional views showing a method for manufacturing a light emitting device according to this embodiment.

[0011] (Step of Preparing First Support Substrate) As shown in Fig. 1, a first support substrate 100 is prepared. The first support substrate 100 has a first substrate 110 and a semiconductor structure 10 disposed on an upper surface 110a of the first substrate 110. In the explanation of the steps shown in Figs. 1 to 19, the first substrate 110 side will be referred to as "bottom" and the semiconductor structure 10 side will be referred to as "top" following Figs. 1 to 6 and 8 to 15.

[0012] The semiconductor structure 10 includes a first semiconductor layer 11 of a first conductivity type, an active layer 13, and a second semiconductor layer 12 of a second conductivity type. The semiconductor structure 10 is made of, for example, a nitride semiconductor. The term "nitride semiconductor" refers to In x Al y Ga 1-x-y This term includes all semiconductors with compositions in which the composition ratios x and y in the chemical formula N (0≦x≦1, 0≦y≦1, x+y≦1) are changed within the respective ranges. For example, the first conductivity type is n-type, and the second conductivity type is p-type.

[0013] The first support substrate 100 can be prepared, for example, by forming the first semiconductor layer 11, the active layer 13, and the second semiconductor layer 12 in this order on the upper surface 110a of the first substrate 110. Each layer of the semiconductor structure 10 can be formed, for example, by MOCVD (Metal Organic Chemical Vapor Deposition). In this case, the first substrate 110 is a substrate for crystal growth of the semiconductor structure 10, for example, a sapphire substrate. The first support substrate 100 may also be prepared by purchasing it.

[0014] In plan view, the semiconductor structure 10 has a region R1 that will become the light emitting element 190 in a later process, a region R2 that is located inside the region R1 and where a reflective film 40 will be formed in a later process, and a region R3 that is inside the region R2 and located in the center of the semiconductor structure 10. A region inside the region R2 and outside the region R3 is defined as a region R4. The center of the semiconductor structure 10 is a region that includes the center of the semiconductor structure 10 and is away from the outer edge in plan view. As shown in FIG. 7, the shape of the region R2 in plan view is a substantially rectangular shape with recesses on two opposing sides. Note that, at the stage when the first support substrate 100 is prepared, structures corresponding to the regions R1, R2, and R3 may not be present.

[0015] Next, the second semiconductor layer 12 and the active layer 13 are removed from a part of the region R1. As a result, a surface 11b is formed in the first semiconductor layer 11, which is exposed from the second semiconductor layer 12 and the active layer 13. However, since the surface 11b of the first semiconductor layer 11 is not located in the cross section shown in FIG. 1, the surface 11b is not shown. As shown in FIG. 7, the surface 11b of the first semiconductor layer 11 extends from the region R1 toward the center of the semiconductor structure 10, and a first electrode 191, which will be described later, is formed thereon. The semiconductor structure 10 can be removed by, for example, reactive ion etching (RIE).

[0016] (Step of forming a light-transmitting electrode) As shown in FIG. 2, a translucent electrode 20 is formed on the semiconductor structure 10. The translucent electrode 20 is formed on the upper surface of the semiconductor structure 10, inside the above-mentioned region R1. The translucent electrode 20 is formed, for example, from ITO (Indium-Tin-Oxide). The translucent electrode 20 contacts the second semiconductor layer 12 and is connected to the second semiconductor layer 12. The translucent electrode 20 is formed, for example, by CVD (Chemical Vapor Deposition) or sputtering. In this specification, "connection" means electrical connection.

[0017] Next, in the region R1, a first electrode 191 is formed on the first semiconductor layer 11, and a second electrode 192 is formed on the translucent electrode 20. The first electrode 191 is connected to the first semiconductor layer 11, and the second electrode 192 is connected to the second semiconductor layer 12 via the translucent electrode 20. However, since the first electrode 191 and the second electrode 192 are not located in the cross section shown in FIG. 2, the first electrode 191 and the second electrode 192 are not shown. As shown in FIG. 7, the first electrode 191 and the second electrode 192 are formed on the semiconductor structure 10 located in the recessed portion of the region R2.

[0018] (Process for forming insulating film) Next, an insulating film 30 is formed on the semiconductor structure 10. The insulating film 30 covers the light-transmitting electrode 20, the first electrode 191, and the second electrode 192. The insulating film 30 is preferably light-reflective. The insulating film 30 is formed by, for example, a DBR (Distributed Bragg Reflector). The insulating film 30 is formed by, for example, CVD (Chemical Vapor Deposition) or a sputtering method.

[0019] Next, as shown in FIG. 3, grooves 10b are formed in the peripheral region of region R1 of the semiconductor structure 10. In plan view, the grooves 10b have a substantially lattice-like shape. The grooves 10b do not penetrate the semiconductor structure 10 in the thickness direction. In other words, the grooves 10b are formed so that a part of the semiconductor structure 10 remains between the grooves 10b and the first substrate 110. As a result, a part of the first semiconductor layer 11 except for the lowest part, the entire active layer 13, and the entire second semiconductor layer 12 are partitioned into regions R1.

[0020] (Process for forming a reflective film) Next, as shown in FIG. 4, a mask 150 is formed on the insulating film 30 by, for example, photolithography. The mask 150 has a first portion 151 and a second portion 152. For example, a resist mask is formed on the semiconductor structure 10, and then a light-shielding mask is formed to expose a region in which an opening is to be formed on the resist mask. Then, the resist mask is subjected to exposure processing and development processing to form the mask 150 having the first portion 151 and the second portion 152. In a plan view, the first portion 151 is disposed around the region R2 in which the reflective film 40 is to be formed. The lower surface of the first portion 151 is in contact with the insulating film 30. In a plan view, the shape of the first portion 151 is, for example, a substantially lattice shape, and an opening is formed for each region R2. The second portion 152 extends from the upper portion of the first portion 151 toward the inside of the opening. The second portion 152 extends from the first portion 151 to a substantially frame-shaped region R4 located inside the region R2 and outside the region R3. The extension amount of the second portion 152 from the first portion 151 is substantially constant. The second portion 152 is not disposed on the region R3.

[0021] Next, as shown in FIG. 5, a reflective material 40a is formed on the mask 150 and the insulating film 30. For example, the reflective material 40a is deposited by a CVD method or a sputtering method. As a result, the reflective material 40a is disposed on the mask 150 and the insulating film 30. The reflective material 40a is disposed relatively thickly on the region R3 on the insulating film 30 and on the mask 150, and the reflective material 40a is disposed in the region R4 on the insulating film 30 so as to become thinner as it moves away from the region R3. This is because, for example, when the reflective material 40a is formed by a sputtering method, the reflective material 40a is less likely to be formed on the portion overlapping the second portion 152 in a plan view than on the portion not covered by the mask 150. The outside of the region R2 on the insulating film 30 is in contact with the first portion 151 of the mask 150, so the reflective material 40a is not disposed.

[0022] Next, as shown in FIG. 6, the mask 150 is removed. This also removes the reflective material 40a arranged on the mask 150. As a result, a reflective film 40 made of the reflective material 40a is formed in the region R2 on the insulating film 30. The reflective film 40 is, for example, a laminated film including a titanium (Ti) layer and an aluminum copper alloy (AlCu) layer. The reflective film 40 is insulated from both the first semiconductor layer 11 and the second semiconductor layer 12 by the insulating film 30. Note that the reflective film 40 may be connected to one of the first semiconductor layer 11 and the second semiconductor layer 12. To remove the mask 150, for example, a stripping solution that dissolves the mask 150 can be used.

[0023] The reflective film 40 has a central portion 41 disposed on the center of the semiconductor structure 10, i.e., in region R3, and a peripheral portion 42 disposed on the peripheral portion of the semiconductor structure 10, i.e., in region R4. The thickness of the central portion 41 is greater than the thickness of the peripheral portion 42. The thickness of the peripheral portion 42 at the boundary with the central portion 41 is approximately equal to the thickness of the central portion 41, but becomes thinner as it moves away from the central portion 41. For example, a ridge is formed at the boundary between the upper surface of the central portion 41 and the upper surface of the peripheral portion 42, but no step is formed. In one example, the maximum thickness of the central portion 41 of the reflective film 40 is about 200 nm to 300 nm, and the minimum thickness of the peripheral portion 42 is about 10 nm to 100 nm.

[0024] 7, in plan view, region R2 is, for example, an H-shape with rounded corners of a square and recesses formed on two opposing sides. Region R3 is located within region R2 and is slightly smaller than region R2. The distance between the outer edge of region R2 and the outer edge of region R3, i.e., the width of region R4, is approximately constant. A central portion 41 of the reflective film 40 is disposed in region R3, and a peripheral portion 42 of the reflective film 40 is disposed in region R4.

[0025] The method for forming the reflective film 40 is not limited to the above-mentioned method. A step may be formed at the boundary between the upper surface of the central portion 41 and the upper surface of the peripheral portion 42, or the boundary may be a continuous curved surface without any ridge or step.

[0026] Next, a first opening 31 and a second opening 32 are formed in the insulating film 30. The first opening 31 is formed in a region directly above the first electrode 191, and the first electrode 191 is exposed in the first opening 31. The second opening 32 is formed in a region directly above the second electrode 192, and the second electrode 192 is exposed in the second opening 32. The first opening 31 and the second opening 32 are formed by removing a part of the insulating film 30. The insulating film 30 can be removed by, for example, the RIE method or wet etching.

[0027] (Step of forming the first bonding member and the second bonding member) Next, as shown in FIG. 8, an insulating film 50 is formed on the entire surface of the semiconductor structure 10. The insulating film 50 is formed of, for example, silicon dioxide (SiO2). The upper surface of the insulating film 50 has a shape that reflects the shape of the reflective film 40 and the shape of the groove 10b. That is, of the upper surface of the insulating film 50, a region located directly above the central portion 41 of the reflective film 40 is approximately parallel to the upper surface of the first substrate 110, and a region located directly above the peripheral portion 42 of the reflective film 40 is inclined along the upper surface of the peripheral portion 42. Of the upper surface of the insulating film 50, a region located within the groove 10b is inclined along the side surface of the groove 10b. The insulating film 50 is formed by, for example, a CVD method or a sputtering method.

[0028] Moreover, openings 51 and 52 are formed in the insulating film 50. As shown in FIG. 23, the opening 51 is located in the first opening 31 of the insulating film 30, and the opening 52 is located in the second opening 32 of the insulating film 30. As a result, the first electrode 191 is exposed in the opening 51, and the second electrode 192 is exposed in the opening 52. Note that the openings 51 and 52 are not located in the cross section shown in FIG. 8. The openings 51 and 52 are formed by removing a part of the insulating film 50. The insulating film 50 can be removed by, for example, the RIE method or wet etching.

[0029] Next, as shown in FIG. 9, a mask 160 is formed on the insulating film 50 by, for example, photolithography. The mask 160 has a first opening 161 arranged in a region including a region directly above a portion of the conductive film 60 to be the first conductive film 61, and a second opening 162 arranged in a region including a region directly above a portion of the conductive film 60 to be the second conductive film 62. Next, a conductive material is formed on the insulating film 50 and the mask 160 by, for example, sputtering. As a result, the conductive film 60 is formed on the entire surface of the insulating film 50 and the mask 160. In one example, the conductive film 60 has a laminated structure in which a titanium layer, a rhodium (Rh) layer, and a titanium layer are laminated. In a process to be described later, a part of the conductive film 60 becomes the first conductive film 61 and the second conductive film 62. That is, the conductive film 60 includes the first conductive film 61 and the second conductive film 62 in a state in which they are not separated from each other.

[0030] 10, a mask 170 is formed on the conductive film 60 by, for example, photolithography. The mask 170 has a first hole 171 and a second hole 172. In a plan view, the first hole 171 is located in a first opening 161 of the mask 160, and the second hole 172 is located in a second opening 162 of the mask 160. The conductive film 60 is exposed in the first hole 171 and the second hole 172. In a plan view, the first hole 171 is disposed across the region R3 and the region R4. Similar to the first hole 171, the second hole 172 is also disposed across the region R3 and the region R4.

[0031] Next, as shown in FIG. 11, a conductive material is formed by, for example, electrolytic plating starting from the conductive film 60. As a result, a conductive material 71a is disposed in the first hole 171, and a conductive material 72a is disposed in the second hole 172. Parts of the upper surfaces of the conductive materials 71a and 72a correspond to the shape of the reflective film 40 and are inclined from the central portion 41 of the reflective film 40 toward the peripheral portion 42 of the reflective film 40. The conductive materials 71a and 72a are, for example, gold (Au). Note that, in FIG. 11, parts of the conductive materials 71a and 72a are formed up to the outside of the first hole 171 and the second hole 172, but may be formed in the first hole 171 and the second hole 172 without being formed outside the first hole 171 and the second hole 172.

[0032] 12, the upper surfaces of the conductive materials 71a and 72a are brought close to being parallel to the upper surface of the first substrate 110. For example, the upper surface of the mask 170 and the upper surfaces of the conductive materials 71a and 72a are flattened by grinding and / or polishing.

[0033] 13, the mask 170 and the mask 160 are removed. As a result, the portion of the conductive film 60 that is disposed on the mask 160 is also removed. Of the conductive film 60, the portion that is disposed in the first opening 161 becomes the first conductive film 61, and the portion that is disposed in the second opening 162 becomes the second conductive film 62. The first conductive film 61 is connected to the first electrode 191, and the second conductive film 62 is connected to the second electrode 192.

[0034] Moreover, the conductive material 71a is exposed and becomes the first bonding member 71, and the conductive material 72a is exposed and becomes the second bonding member 72. The first bonding member 71 is formed on the first conductive film 61, and the second bonding member 72 is formed on the second conductive film 62. The first bonding member 71 is connected to the first semiconductor layer 11 via the first conductive film 61 and the first electrode 191, and the second bonding member 72 is connected to the second semiconductor layer 12 via the second conductive film 62, the second electrode 192, and the translucent electrode 20. In this manner, the intermediate body 180 is produced.

[0035] The first conductive film 61 and the second conductive film 62 are separated from each other. The first conductive film 61 and the second conductive film 62 are respectively disposed from region R3 to region R4 on the upper surface of the insulating film 50. Therefore, the upper surface of the first conductive film 61 and the upper surface of the second conductive film 62 are also not flat, but have a shape corresponding to the shape of the reflective film 40. That is, the upper surfaces of the first conductive film 61 and the second conductive film 62 are nearly flat along the upper surface of the central portion 41 of the reflective film 40 in region R3, and are inclined along the peripheral portion 42 of the reflective film 40 in region R4 so as to become lower with increasing distance from region R3.

[0036] The first bonding member 71 has a first surface 71b as its upper surface. The second bonding member 72 has a second surface 72b as its upper surface. The first surface 71b and the second surface 72b are located on the same plane. The first bonding member 71 and the second bonding member 72 are, for example, rectangular in shape in a plan view, and the length of one side of the first bonding member 71 and the second bonding member 72 is, for example, 5 μm or more and 20 μm or less.

[0037] The first bonding member 71 has a first end 71d located on the central portion 41 of the reflective film 40, i.e., in the region R3, and a second end 71e located on the peripheral portion 42 of the reflective film 40, i.e., in the region R4. The lower surface 71c of the first bonding member 71 is in contact with the upper surface of the first conductive film 61, so that the shape of the lower surface 71c of the first bonding member 71 in a cross-sectional view reflects the shape of the first conductive film 61. The lower surface 71c located on the central portion 41 is nearly flat, while the lower surface 71c located on the peripheral portion 42 is inclined with respect to the lower surface 71c located on the central portion 41. On the other hand, the first surface 71b, which is the upper surface of the first bonding member 71, is nearly flat. Therefore, the thickness of the first end 71d is thinner than the thickness of the second end 71e in the vertical direction. The difference in thickness between the first end 71d and the second end 71e is, for example, 0.1 μm or more and 0.5 μm or less.

[0038] Similarly, the second bonding member 72 has a third end 72d located on the central portion 41 of the reflective film 40, i.e., in the region R3, and a fourth end 72e located on the peripheral portion 42 of the reflective film 40, i.e., in the region R4. The lower surface 72c of the second bonding member 72 is in contact with the upper surface of the second conductive film 62, so that the shape of the lower surface 72c of the second bonding member 72 in a cross-sectional view reflects the shape of the second conductive film 62. The lower surface 72c located on the central portion 41 is nearly flat, while the lower surface 72c located on the peripheral portion 42 is inclined with respect to the lower surface 72c located on the central portion 41. On the other hand, the second surface 72b, which is the upper surface of the second bonding member 72, is nearly flat. Therefore, the thickness of the third end 72d is thinner than the thickness of the fourth end 72e in the vertical direction. The difference in thickness between the third end 72d and the fourth end 72e is, for example, 0.1 μm or more and 0.5 μm or less. The thickness of the first bonding member 71 and the second bonding member 72 is preferably not less than 2 μm and not more than 30 μm.

[0039] 14, a resin layer 181 is formed on the intermediate body 180. Next, the resin layer 181 is pressed against a support substrate 182 to bond them. Next, the first substrate 110 is peeled off from the intermediate body 180. This exposes the lower surface of the first semiconductor layer 11. The resin layer 181 is formed, for example, by applying a resin material onto the intermediate body 180 using a dispenser or the like. The first substrate 110 is peeled off from the intermediate body 180 by, for example, a laser lift off (LLO) method.

[0040] Next, as shown in Fig. 15, the first semiconductor layer 11 is thinned, and the first semiconductor layer 11 located below the groove portion 10b shown in Fig. 14 is removed. This causes the semiconductor structure 10 to be divided into individual regions R1. In a plan view, the individual semiconductor structures 10 have a rectangular shape, and the length of one side of the semiconductor structure 10 is, for example, 10 µm or more and 100 µm or less. The first semiconductor layer 11 can be thinned, for example, by CMP (Chemical Mechanical Polishing) or the like.

[0041] Next, a protective film 81 is formed to protect the end of the insulating film 50. The protective film 81 is continuously formed on the insulating film 50 and on the outer periphery of the surface 11a of the first semiconductor layer 11. The protective film 81 is formed of, for example, silicon dioxide, silicon nitride, or silicon oxynitride. Next, a fine uneven structure is formed on the surface 11a of the first semiconductor layer 11 to roughen the surface. This is performed, for example, by tetramethylammonium hydroxide (TMHA) treatment. Next, a protective film 82 is formed so as to cover the surface 11a of the first semiconductor layer 11 and the protective film 81. The lower surface of the protective film 82 formed on the roughened surface 11a of the first semiconductor layer 11 has a larger surface roughness than the lower surface of the protective film 82 formed on the protective film 81. The protective film 82 is formed of, for example, silicon dioxide, silicon nitride, or silicon oxynitride. The insulating films 81 and 82 are formed, for example, by a CVD method or a sputtering method. The thickness of the protective film 81 is, for example, not less than 50 nm and not more than 200 nm, and the thickness of the protective film 82 is, for example, not less than 0.1 μm and not more than 3 μm.

[0042] 16 to 19 are shown upside down compared to Fig. 1 to Fig. 15. As shown in Fig. 16, a light emitting element 190 including a semiconductor structure 10, a first bonding member 71, a second bonding member 72, etc. is disposed on a support substrate 185 via an adhesive layer 184. The resin layer 181 is also removed. A detailed configuration of the light emitting element 190 will be described later.

[0043] (Step of Preparing Second Support Substrate) 17, a second support substrate 200 is prepared. The second support substrate 200 has a second substrate 210, and a first connection portion 221 and a second connection portion 222 disposed on the upper surface of the second substrate 210. The first connection portion 221 and the second connection portion 222 contain gold. The upper surfaces of the first connection portion 221 and the second connection portion 222, which come into contact with the first bonding member 71 and the second bonding member 72, are made of gold.

[0044] (Step of joining a first joint member to the first connection portion and joining a second joint member to the second connection portion) 18, the first bonding member 71 of the light emitting element 190 is bonded to the first connection portion 221 of the second support substrate 200, and the second bonding member 72 of the light emitting element 190 is bonded to the second connection portion 222 of the second support substrate 200. The bonding is performed, for example, by biasing the support substrate 185 in a direction toward the second substrate 210 to apply a force pressing the first connection portion 221 and the first bonding member 71 against each other, and by heating the entire structure while applying a force pressing the second connection portion 222 and the second bonding member 72 against each other. Ultrasonic waves may also be applied as necessary.

[0045] As a result, the first connection portion 221 and the first joint member 71 are joined to form the first conductive member 231, and the second connection portion 222 and the second joint member 72 are joined to form the second conductive member 232.

[0046] The bonding may be performed twice, a temporary bonding step and a final bonding step, and the light emitting elements 190 may be inspected and any light emitting elements 190 determined to be defective may be replaced between the temporary bonding step and the final bonding step. In more detail, in the temporary bonding step, all the light emitting elements 190 are bonded together under conditions in which the first bonding member 71 and the second bonding member 72 are bonded to the first connecting portion 221 and the second connecting portion 222 weaker than in the final bonding step. For example, the pressing force applied in the temporary bonding step is smaller than the pressing force applied in the final bonding step. As a result, the light emitting elements 190 are bonded to the second support substrate 200 weaker than in the final bonding step.

[0047] Next, each light emitting element 190 is inspected. For example, whether the light emitting element 190 is arranged at a predetermined position on the second support substrate 200 is evaluated by appearance, or the light emitting element 190 is supplied with power via the second support substrate 200 to evaluate the light emitting characteristics. Then, the light emitting element 190 determined to be defective is removed from the second support substrate 200, and a new light emitting element 190 is bonded to the position where the light emitting element 190 determined to be defective was removed, and temporarily bonded. Thereafter, the main bonding process is performed under conditions in which the first bonding member 71 and the second bonding member 72 are bonded stronger than in the temporary bonding process. In this way, the light emitting element 190 determined to be defective can be efficiently removed. Note that, if the bonding process is performed only in the main bonding process without performing the temporary bonding process, the bonding strength between the light emitting element 190 and the second support substrate 200 is high, and it is difficult to efficiently remove the light emitting element 190 determined to be defective.

[0048] (Electroless plating process) 19, a conductive layer 240 is formed by electrolytic plating on the surfaces of the structure made of the first conductive member 231 and the first conductive film 61, and the structure made of the second conductive member 232 and the second conductive film 62. The conductive layer 240 is made of, for example, gold. The step of forming the conductive layer 240 may be omitted. In this manner, a light emitting device in which a plurality of light emitting elements 190 are bonded to the second substrate 210 is manufactured.

[0049] (Light emitting element) Next, the configuration of the light emitting element 190 before bonding to the second support substrate 200, that is, in the step shown in FIG. 16, will be described. FIG. 20 is a plan view showing the light emitting element in this embodiment. FIG. 21 is a cross-sectional view taken along line XXI-XXI shown in FIG. FIG. 22 is a cross-sectional view taken along line XXII-XXII shown in FIG. 21 and 22, the side of the first bonding member 71 and the second bonding member 72 will be referred to as the "bottom" and the side of the semiconductor structure 10 will be referred to as the "top." Fig. 20 is a view of the light emitting element as seen from below.

[0050] As shown in FIGS. 20 to 22, the light emitting element 190 includes a semiconductor structure 10. The semiconductor structure 10 includes, for example, gallium nitride (GaN). In the semiconductor structure 10, a second semiconductor layer 12, an active layer 13, and a first semiconductor layer 11 are stacked in this order from bottom to top. In one example, the second semiconductor layer 12 includes an impurity that serves as an acceptor, for example, magnesium (Mg), and has a p-type conductivity. The first semiconductor layer 11 includes an impurity that serves as a donor, for example, silicon (Si), and has an n-type conductivity.

[0051] The surface 11a of the first semiconductor layer 11 of the semiconductor structure 10 has an uneven structure. The surface 11a is an emission surface from which light from the light emitting element 190 is mainly extracted. The first semiconductor layer 11 has a surface 11b on which the second semiconductor layer 12 and the active layer 13 are not formed. A first electrode 191 is disposed on the surface 11b and connected to the first semiconductor layer 11. A translucent electrode 20 is disposed on the lower surface of the second semiconductor layer 12. A second electrode 192 is disposed on the lower surface of the translucent electrode 20. The second electrode 192 is connected to the second semiconductor layer 12 via the translucent electrode 20.

[0052] An insulating film 30 is disposed on the lower surface of the semiconductor structure 10 so as to cover the translucent electrode 20, the first electrode 191, and the second electrode 192. The insulating film 30 is, for example, a DBR. The insulating film 30 has a first opening 31 and a second opening 32. The first electrode 191 is exposed in the first opening 31, and the second electrode 192 is exposed in the second opening 32.

[0053] A reflective film 40 is disposed on the lower surface of the insulating film 30. The reflective film 40 is, for example, a laminated film including a titanium (Ti) layer and an aluminum copper alloy (AlCu) layer. The reflective film 40 has a central portion 41 disposed on the center of the semiconductor structure 10, i.e., in region R3, and a peripheral portion 42 disposed on the peripheral portion of the semiconductor structure 10, i.e., in region R4. The thickness of the central portion 41 is thicker than the thickness of the peripheral portion 42. The thickness of the peripheral portion 42 becomes thinner as it moves away from the central portion 41.

[0054] An insulating film 50 is disposed on the side and bottom surfaces of the semiconductor structure 10. The insulating film 50 covers the translucent electrode 20, the first electrode 191, the second electrode 192, the insulating film 30, and the reflective film 40. The insulating film 50 has openings 51 and 52. In plan view, the first opening 31 of the insulating film 30 is located in the opening 51, and the second opening 32 of the insulating film 30 is located in the opening 52. A protective film 81 is disposed on the outer periphery of the surface 11a of the first semiconductor layer 11. A protective film 82 is disposed on the upper surface of the semiconductor structure 10 so as to cover the protective film 81.

[0055] A first conductive film 61 and a second conductive film 62 are disposed apart from each other on the lower surface of the insulating film 50. The first conductive film 61 is connected to a first electrode 191 via an opening 51 in the insulating film 50 and a first opening 31 in the insulating film 30. The second conductive film 62 is connected to a second electrode 192 via an opening 52 in the insulating film 50 and a second opening 32 in the insulating film 30.

[0056] Two first bonding members 71 are disposed on the lower surface of the first conductive film 61, and two second bonding members 72 are disposed on the lower surface of the second conductive film 62. Each of the first bonding members 71 and each of the second bonding members 72 has a substantially rectangular parallelepiped shape.

[0057] Each of the first bonding members 71 has a first end 71d and a second end 71e. The first end 71d is located in a region immediately below the central portion 41 of the reflective film 40, i.e., in region R3. The second end 71e is located on the peripheral portion 42 of the reflective film 40, i.e., in region R4. The thickness of the first end 71d is thinner than the thickness of the second end 71e.

[0058] Each second bonding member 72 has a third end 72d and a fourth end 72e. The third end 72d is located in a region immediately below the central portion 41 of the reflective film 40, i.e., in region R3. The fourth end 72e is located on the peripheral portion 42 of the reflective film 40, i.e., in region R4. The thickness of the third end 72d is thinner than the thickness of the fourth end 72e.

[0059] The first surface 71b, which is the lower surface of the first bonding member 71, is a surface that comes into contact with the first connection portion 221 of the second support substrate 200 in the process shown in FIG. 18. The second surface 72b, which is the lower surface of the second bonding member 72, is a surface that comes into contact with the second connection portion 222 of the second support substrate 200 in the process shown in FIG. 18. The two first surfaces 71b and the two second surfaces 72b are located on the same plane. In other words, the two first surfaces 71b and the two second surfaces 72b are parts of a virtual plane 70p. By forming such first surfaces 71b and second surfaces 72b, it is possible to improve the bonding between the first bonding member 71 and the first connection portion 221 and the bonding between the second bonding member 72 and the second connection portion 222. As a result, the bonding between the light emitting element 190 and the second support substrate 200 is improved.

[0060] (effect) According to this embodiment, in the first bonding member 71, the thickness of the first end 71d located on the inner periphery of the light emitting element 190 in a plan view is thinner than the thickness of the second end 71e located on the outer periphery. Similarly, in the second bonding member 72, the thickness of the third end 72d located on the inner periphery of the light emitting element 190 in a plan view is thinner than the thickness of the fourth end 72e located on the outer periphery. Thereby, when the first bonding member 71 and the second bonding member 72 are bonded in the step shown in FIG. 18, the extension of the first bonding member 71 to the second bonding member 72 side and the extension of the second bonding member 72 to the first bonding member 71 side can be suppressed. As a result, the first bonding member 71 and the second bonding member 72 after bonding can be reduced from coming into contact with each other and causing a short circuit. Therefore, the reliability of bonding the light emitting element 190 to the second support substrate 200 is improved.

[0061] <Second embodiment> FIG. 23 is a plan view showing a method for manufacturing a light emitting device according to this embodiment. FIG. 23 shows the light emitting element 190a before being bonded to the second support substrate 200. As shown in FIG.

[0062] As shown in FIG. 23, in the light emitting device 190a according to this embodiment, the distance between the first bonding member 71 and the second bonding member 72 is larger than that of the light emitting device 190 according to the first embodiment. For example, in a plan view, the distance between the first end 71d and the third end 72d is made larger than the distance between the second end 71e and the outer edge of the semiconductor structure 10 or the distance between the fourth end 72e and the outer edge of the semiconductor structure 10. This can further reduce the first bonding member 71 and the second bonding member 72 from coming into contact with each other when the first bonding member 71 and the second bonding member 72 are bonded together. The method and effects of this embodiment other than those described above are the same as those of the first embodiment.

[0063] <Third embodiment> 24 and 25 are cross-sectional views showing a method for manufacturing a light emitting device according to this embodiment. FIG. 26 is a plan view showing a method for manufacturing a light emitting device according to this embodiment. FIG. 26 shows the light emitting element 190b before being bonded to the second support substrate 200. In FIG.

[0064] In this embodiment, first, the steps shown in FIGS. 1 to 9 are carried out. 24, a mask 170 is formed on the conductive film 60. A plurality of first holes 171a and 171b and a plurality of second holes 172a and 172b are formed in the mask 170 by, for example, a photolithography method. In a plan view, the first holes 171a and the second holes 172a are arranged in a region R3, and the first holes 171b and the second holes 172b are arranged in a region R4.

[0065] Next, steps similar to those shown in FIGS. 11 and 12 are carried out. Next, as shown in FIG. 25, the mask 170 and the mask 160 are removed. As a result, a part of the conductive film 60 is removed, and the remaining part of the conductive film 60 becomes the first conductive film 61 and the second conductive film 62. In addition, a first bonding member 71f is formed in the first hole 171a, a first bonding member 71g is formed in the first hole 171b, a second bonding member 72f is formed in the second hole 172a, and a second bonding member 72g is formed in the second hole 172b. In this way, a plurality of first bonding members 71f and 71g connected to the first semiconductor layer 11 and a plurality of second bonding members 72f and 72g connected to the second semiconductor layer 12 and arranged at a distance from the first bonding members 71f and 71g in a plan view are formed on the reflective film 40.

[0066] The first bonding members 71f and 71g and the second bonding members 72f and 72g are, for example, rectangular in shape in plan view. In plan view, the first bonding members 71f and the second bonding members 72f are located in region R3, and the first bonding members 71g and the second bonding members 72g are located in region R4 that is larger than region R3. Therefore, the areas of the second bonding members 72f and 72g may be larger than the areas of the first bonding members 71f and 71g. This increases the areas of the first bonding members 71 and the second bonding members 72, and improves the bonding between the light emitting element 190b and the second support substrate 200.

[0067] In plan view, the first bonding member 71f and the second bonding member 72f are located in region R3, and the first bonding member 71g and the second bonding member 72g are located in region R4. The thickness of the first bonding member 71f is thinner than the thickness of the first bonding member 71g. The thickness of the second bonding member 72f is thinner than the thickness of the second bonding member 72g. The difference between the thickness of the first bonding member 71f and the thickness of the first bonding member 71g and the difference between the thickness of the second bonding member 72f and the thickness of the second bonding member 72g are, for example, 0.1 μm or more and 0.5 μm or less.

[0068] Next, steps similar to those shown in FIGS. 14 to 16 are carried out. 26, a light emitting element 190b is fabricated. In the light emitting element 190b, two first bonding members 71f and two 71g are disposed on the first conductive film 61. In addition, two second bonding members 72f and two second bonding members 72g are disposed on the second conductive film 62.

[0069] As shown in FIG. 25, the upper surface of the first bonding member 71f, that is, the surface where the first bonding member 71f contacts the first connection portion 221 of the second support substrate 200 in the process shown in FIG. 18, is the first bonding surface 73f. The upper surface of the first bonding member 71g, that is, the surface where the first bonding member 71g contacts the first connection portion 221 in the process shown in FIG. 18, is the second bonding surface 73g. The upper surface of the second bonding member 72f, that is, the surface where the second bonding member 72f contacts the second connection portion 222 of the second support substrate 200 in the process shown in FIG. 18, is the third bonding surface 74f. The upper surface of the second bonding member 72g, that is, the surface where the second bonding member 72g contacts the second connection portion 222 in the process shown in FIG. 18, is the fourth bonding surface 74g. The first bonding surface 73f, the second bonding surface 73g, the third bonding surface 74f, and the fourth bonding surface 74g are located on the same plane. In other words, the first bonding surface 73f, the second bonding surface 73g, the third bonding surface 74f, and the fourth bonding surface 74g are parts of the virtual plane 75p. By forming such first bonding surface 73f, the second bonding surface 73g, the third bonding surface 74f, and the fourth bonding surface 74g, it is possible to improve the bonding between the light emitting element 190b and the second support substrate 200. The subsequent steps are similar to those shown in FIGS. 17 to 19.

[0070] According to this embodiment, in the step shown in Fig. 18, it is possible to increase the load per unit area applied to each of the first and second bonding members while reducing contact between the first and second bonding members. This makes it easier to bond the first and second bonding members, improving the bond between the light emitting element 190b and the second support substrate 200. Other methods and effects of this embodiment are similar to those of the first embodiment.

[0071] The present invention includes the following aspects.

[0072] (Appendix 1) Providing a first support substrate having a first substrate and a semiconductor structure disposed on an upper surface of the first substrate, the semiconductor structure including a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; forming an insulating film on the semiconductor structure; forming a reflective film on the insulating film; forming, on the reflective film, a first bonding member connected to the first semiconductor layer and a second bonding member connected to the second semiconductor layer and disposed apart from the first bonding member in a plan view; providing a second support substrate having a second substrate and a first connection portion and a second connection portion disposed on an upper surface of the second substrate; joining the first joint member to the first connection portion and joining the second joint member to the second connection portion; Equipped with the reflective film has a central portion disposed on a central portion of the semiconductor structure and a peripheral portion disposed on a peripheral portion of the semiconductor structure, the central portion having a thickness greater than a thickness of the peripheral portion; In the step of forming the first bonding member and the second bonding member, the first bonding member has a first end portion located on a central portion of the reflective film and a second end portion located on a peripheral portion of the reflective film, the first end portion being thinner than the second end portion; The second bonding member has a third end located on a central portion of the reflective film and a fourth end located on a peripheral portion of the reflective film, and the thickness of the third end is thinner than the thickness of the fourth end.

[0073] (Appendix 2) A manufacturing method for a light emitting device as described in Appendix 1, wherein in the process of forming the first bonding member and the second bonding member, the first bonding member has a first surface that contacts the first connection portion, the second bonding member has a second surface that contacts the second connection portion, and the first surface and the second surface are located on the same plane.

[0074] (Appendix 3) The method further includes forming a first conductive film connected to the first semiconductor layer and a second conductive film connected to the second semiconductor layer on the reflective film, 3. The method for manufacturing a light emitting device according to claim 1 or 2, wherein in the step of forming the first bonding member and the second bonding member, two of the first bonding members are formed on the first conductive film, and two of the second bonding members are formed on the second conductive film.

[0075] (Appendix 4) Providing a first support substrate having a first substrate and a semiconductor structure disposed on an upper surface of the first substrate, the semiconductor structure including a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; forming an insulating film on the semiconductor structure; forming a reflective film on the insulating film; forming, on the reflective film, a plurality of first bonding members connected to the first semiconductor layer and a plurality of second bonding members connected to the second semiconductor layer and disposed apart from the first bonding members in a plan view; providing a second support substrate having a second substrate and a first connection portion and a second connection portion disposed on an upper surface of the second substrate; joining the plurality of first joint members to the first connection portion and joining the plurality of second joint members to the second connection portion; Equipped with the reflective film has a central portion disposed on a central portion of the semiconductor structure and a peripheral portion disposed on a peripheral portion of the semiconductor structure, the central portion having a thickness greater than a thickness of the peripheral portion; A method for manufacturing a light emitting device, wherein, in the step of forming the first bonding member and the second bonding member, of the plurality of first bonding members, a thickness of the first bonding member arranged on the central portion of the reflective film is thinner than a thickness of the first bonding member arranged on the peripheral portion of the reflective film, and, of the plurality of second bonding members, a thickness of the second bonding member arranged on the central portion of the reflective film is thinner than a thickness of the second bonding member arranged on the peripheral portion of the reflective film.

[0076] (Appendix 5) The manufacturing method for a light emitting device described in Appendix 4, wherein in the process of forming the first bonding member and the second bonding member, a first bonding surface where the first bonding member arranged on the central portion of the reflective film contacts the first connection portion, a second bonding surface where the first bonding member arranged on the peripheral portion of the reflective film contacts the first connection portion, a third bonding surface where the second bonding member arranged on the central portion of the reflective film contacts the second connection portion, and a fourth bonding surface where the second bonding member arranged on the peripheral portion of the reflective film contacts the second connection portion are located on the same plane.

[0077] (Appendix 6) The step of forming the first bonding member and the second bonding member includes: forming a mask on the reflective film, the mask having a first hole located in an area where the first bonding member is to be formed and a second hole located in an area where the second bonding member is to be formed; disposing a conductive material within the first hole and within the second hole; bringing a top surface of the conductive material and the top surface of the first substrate closer together in parallel; removing the mask; 6. A method for producing a light emitting device according to any one of claims 1 to 5, comprising:

[0078] (Appendix 7) The step of forming the reflective film includes: forming a mask on the insulating film, the mask having a first portion arranged around a region where the reflective film is to be formed, and a second portion extending from an upper portion of the first portion onto a region where the peripheral portion is to be formed and spaced apart from the insulating film, the mask not being arranged on a region where the central portion is to be formed; disposing a reflective material on the mask and on the insulating film; removing the mask; 7. A method for producing a light emitting device according to any one of claims 1 to 6, comprising:

[0079] (Appendix 8) After the step of bonding the first support substrate and the second support substrate, The method for manufacturing a light emitting device described in any one of Appendices 1 to 7, further comprising a step of forming a conductive layer by electroless plating on a surface of a first conductive member formed by joining the first connection portion and the first bonding member, and on a surface of a second conductive member formed by joining the second connection portion and the second bonding member.

[0080] (Appendix 9) 9. The method for manufacturing a light emitting device according to any one of claims 1 to 8, wherein the first bonding member and the second bonding member, and the first connection portion and the second connection portion contain gold.

[0081] (Appendix 10) 10. The method for manufacturing a light emitting device according to any one of claims 1 to 9, wherein the first bonding member and the second bonding member have a thickness of 2 μm or more and 30 μm or less.

[0082] (Appendix 11) 11. The method for producing a light emitting device according to any one of claims 1 to 10, wherein the semiconductor structure has a rectangular shape in a plan view, and a length of one side of the semiconductor structure is 50 μm or less. [Industrial Applicability]

[0083] The present invention can be used, for example, as a light source for an automobile headlamp. [Explanation of symbols]

[0084] 10. Semiconductor Structure 10b groove 11 First semiconductor layer 11a surface 11b Surface 12 Second semiconductor layer 13 Active layer 20 Translucent electrode 30 Insulating film 31 First opening 32 Second Opening 40 Reflective film 40a reflective material 41 Central part 42 Periphery 50 Insulating film 51, 52 Opening 60 Conductive Film 61 First conductive film 62 Second conductive film 70p plane 71, 71f, 71g First joining member 71a Conductive materials 71b 1st page 71c bottom surface 71d 1st end 71e 2nd end 72, 72f, 72g Second joining member 72a Conductive materials 72b 2nd side 72c bottom surface 72d Third end 72e 4th end 73f 1st joint surface 73g 2nd joint surface 74f 3rd joint surface 74g 4th joint surface 75p plane 80 Protective film 81 Protective film 82 Protective film 100 1st support board 110 First board 110a top side 150 Mask 151 Part 1 152 Part 2 160 Mask 161 First Opening 162 Second Opening 170 Mask 171, 171a, 171b Hole 1 172, 172a, 172b 2nd hole 180 Intermediates 181 Resin layer 182 Support Substrate 184 Adhesive layer 185 Support Substrate 190, 190a, 190b Light emitting element 191 1st electrode 192 2nd electrode 200 Second support board 210 Second board 221 First Connection 222 Second connection part 231 First conductive member 232 Second conductive member 240 Conductive Layer R1, R2, R3, R4 area

Claims

1. Providing a first support substrate having a first substrate and a semiconductor structure disposed on an upper surface of the first substrate, the semiconductor structure including a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; forming an insulating film on the semiconductor structure; forming a reflective film on the insulating film; forming, on the reflective film, a first bonding member connected to the first semiconductor layer and a second bonding member connected to the second semiconductor layer and disposed apart from the first bonding member in a plan view; providing a second support substrate having a second substrate and a first connection portion and a second connection portion disposed on an upper surface of the second substrate; a step of joining the first joint member to the first connection portion and joining the second joint member to the second connection portion; Equipped with the reflective film has a central portion disposed on a central portion of the semiconductor structure and a peripheral portion disposed on a peripheral portion of the semiconductor structure, the central portion having a thickness greater than a thickness of the peripheral portion; In the step of forming the first bonding member and the second bonding member, the first bonding member has a first end portion located on a central portion of the reflective film and a second end portion located on a peripheral portion of the reflective film, the first end portion having a thickness smaller than a thickness of the second end portion; A method for manufacturing a light emitting device, wherein the second bonding member has a third end located on a central portion of the reflective film and a fourth end located on a peripheral portion of the reflective film, and the thickness of the third end is thinner than the thickness of the fourth end.

2. 2. The method for manufacturing a light emitting device according to claim 1, wherein, in the process of forming the first bonding member and the second bonding member, the first bonding member has a first surface that contacts the first connection portion, the second bonding member has a second surface that contacts the second connection portion, and the first surface and the second surface are located on the same plane.

3. The method further includes forming a first conductive film connected to the first semiconductor layer and a second conductive film connected to the second semiconductor layer on the reflective film, 2. The method for manufacturing a light emitting device according to claim 1, wherein in the step of forming the first bonding member and the second bonding member, two of the first bonding members are formed on the first conductive film, and two of the second bonding members are formed on the second conductive film.

4. Providing a first support substrate having a first substrate and a semiconductor structure disposed on an upper surface of the first substrate, the semiconductor structure including a first semiconductor layer of a first conductivity type, an active layer, and a second semiconductor layer of a second conductivity type; forming an insulating film on the semiconductor structure; forming a reflective film on the insulating film; forming, on the reflective film, a plurality of first bonding members connected to the first semiconductor layer and a plurality of second bonding members connected to the second semiconductor layer and disposed apart from the first bonding members in a plan view; providing a second support substrate having a second substrate and a first connection portion and a second connection portion disposed on an upper surface of the second substrate; a step of joining the plurality of first joining members to the first connection portion and joining the plurality of second joining members to the second connection portion; Equipped with the reflective film has a central portion disposed on a central portion of the semiconductor structure and a peripheral portion disposed on a peripheral portion of the semiconductor structure, the central portion having a thickness greater than a thickness of the peripheral portion; A method for manufacturing a light emitting device, wherein, in the process of forming the first bonding member and the second bonding member, of the plurality of first bonding members, a thickness of the first bonding member arranged on the central portion of the reflective film is thinner than a thickness of the first bonding member arranged on the peripheral portion of the reflective film, and, of the plurality of second bonding members, a thickness of the second bonding member arranged on the central portion of the reflective film is thinner than a thickness of the second bonding member arranged on the peripheral portion of the reflective film.

5. 5. The method for manufacturing a light-emitting device according to claim 4, wherein in the process of forming the first bonding member and the second bonding member, a first bonding surface where the first bonding member arranged on the central portion of the reflective film contacts the first connection portion, a second bonding surface where the first bonding member arranged on the peripheral portion of the reflective film contacts the first connection portion, a third bonding surface where the second bonding member arranged on the central portion of the reflective film contacts the second connection portion, and a fourth bonding surface where the second bonding member arranged on the peripheral portion of the reflective film contacts the second connection portion are located on the same plane.

6. The step of forming the first bonding member and the second bonding member includes: forming a mask on the reflective film, the mask having a first hole located in a region where the first bonding member is to be formed and a second hole located in a region where the second bonding member is to be formed; disposing a conductive material within the first hole and within the second hole; bringing a top surface of the conductive material and the top surface of the first substrate closer to each other in parallel; removing the mask; The method for manufacturing a light emitting device according to claim 1 or 4, comprising the steps of:

7. The step of forming the reflective film includes: forming a mask on the insulating film, the mask having a first portion disposed around a region where the reflective film is to be formed, and a second portion extending from an upper portion of the first portion onto a region where the peripheral portion is to be formed and spaced apart from the insulating film, the mask not being disposed on a region where the central portion is to be formed; disposing a reflective material on the mask and on the insulating film; removing the mask; The method for manufacturing a light emitting device according to claim 1 or 4, comprising the steps of:

8. After the step of bonding the first support substrate and the second support substrate, 5. A method for manufacturing a light-emitting device as described in claim 1 or 4, further comprising a step of forming a conductive layer by electroless plating on a surface of a first conductive member formed by joining the first connection portion and the first bonding member, and on a surface of a second conductive member formed by joining the second connection portion and the second bonding member.

9. The method for manufacturing a light emitting device according to claim 1 , wherein the first bonding member, the second bonding member, the first connecting portion, and the second connecting portion contain gold.

10. The method for manufacturing a light emitting device according to claim 1 , wherein the first bonding member and the second bonding member have a thickness of 2 μm or more and 30 μm or less.

11. 5. The method for manufacturing a light emitting device according to claim 1, wherein the semiconductor structure has a rectangular shape in a plan view, and a length of one side of the semiconductor structure is 50 [mu]m or less.

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