Sputtering apparatus

Abstract

To provide a sputtering apparatus capable of forming a thin film with a more uniform thickness on a substrate.SOLUTION: A sputtering apparatus includes a substrate-holding part and a sputtering part. The substrate-holding part revolves a substrate around a predetermined revolution axis Q1. The sputtering part is arranged at a position facing a part of an annular revolution route R1 in which the substrate is revolved by the substrate -holding part. The sputtering part includes a target, a sputtering gas supply part, and a magnet part 24. The sputtering gas supply part supplies a sputtering gas between the target and the revolution route. A plasma generation part turns the sputtering gas into plasma. The magnet part 24 is arranged on a side opposite to the revolution route R1 with respect to the target, and forms a race track being a magnetic field on a first principle surface side of the target. The magnet part 24 forms a race track RT that is arc-shaped and annular and extends to one side in a circumferential direction of the revolution axis line Q1 as going toward an outside of a radial direction of the revolution axis line Q1.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The present disclosure relates to a sputtering apparatus. [Background technology]

[0002] Conventionally, sputtering apparatuses for forming a thin film on a surface of a substrate have been proposed (e.g., Patent Documents 1 and 2). In Patent Documents 1 and 2, the sputtering apparatus forms a Group III nitride semiconductor film on the surface of a substrate. The sputtering apparatus includes a chamber, a rotating jig, a target, a first plasma generating means, and a second plasma generating means.

[0003] A target chamber and a nitrogen chamber are provided in the chamber. The target chambers and the nitrogen chambers are provided alternately around a predetermined revolution axis. The rotating jig revolves the substrate W around the predetermined revolution axis in the chamber. This moves the substrate W from the target chamber to the nitrogen chamber and also moves from the nitrogen chamber to the target chamber.

[0004] The target is provided in the target chamber. The first plasma generating means generates a first plasma of argon in the target chamber. The argon ions collide with the target, and the collision causes raw material particles to fly out of the target. The raw material particles are supplied to the substrate and deposited on the substrate.

[0005] The second plasma generating means is provided in the nitrogen chamber. The second plasma generating means generates a second plasma of nitrogen in the nitrogen chamber. This causes the highly reactive nitrogen to react with the raw material particles of the substrate.

[0006] The target chamber and the nitrogen chamber are in communication with each other in the circumferential direction, and the substrate passes through the target chamber and the nitrogen chamber as the substrate revolves around the rotating jig. When the substrate passes through the target chamber, raw material particles of a group III element are deposited on the substrate, and when the substrate passes through the nitrogen chamber, nitrogen reacts with the raw material particles on the substrate. This allows a group III nitride semiconductor to be formed on the substrate. [Prior art documents] [Patent documents]

[0007] [Patent Document 1] JP 2009-124100 A [Patent Document 2] Patent Publication No. 2022-83129 Summary of the Invention [Problem to be solved by the invention]

[0008] The substrate revolves around the revolution axis. Therefore, the speed of the inner peripheral portion of the substrate, which is closer to the revolution axis, is lower than the speed of the outer peripheral portion of the substrate, which is farther from the revolution axis. Therefore, the inner peripheral portion crosses the space above the target in a relatively long time, while the outer peripheral portion crosses the space above the target in a relatively short time. This difference in time causes a problem in that the thickness of the Group III element film deposited on the inner peripheral portion of the substrate differs from the thickness of the Group III element film deposited on the outer peripheral portion of the substrate.

[0009] Therefore, an object of the present disclosure is to provide a sputtering apparatus capable of forming a thin film on a substrate with a more uniform thickness. [Means for solving the problem]

[0010] A first aspect is a sputtering apparatus comprising: a substrate holding unit that revolves a substrate around a predetermined axis of revolution; and a sputtering unit provided in a position facing a portion of a circular orbital path about which the substrate is revolved by the substrate holding unit, the sputtering unit including a target having a first main surface on the side of the orbital path and a second main surface opposite the first main surface, a sputtering gas supply unit having an air inlet that supplies sputtering gas between the target and the orbital path, a plasma generating unit that converts the sputtering gas into plasma, and a magnet unit provided on the opposite side of the orbital path with respect to the target, the magnet unit forming a racetrack which is a magnetic field on the first main surface side of the target, the magnet unit forming an arc-shaped, annular racetrack that moves radially outward about the axis of revolution and toward one side in a circumferential direction about the axis of revolution.

[0011] A second aspect is a sputtering apparatus according to the first aspect, wherein the magnet portion forms the racetrack including a first arc-shaped portion that is arc-shaped toward one side in the circumferential direction as it moves radially outward, a second arc-shaped portion that is spaced apart from the first arc-shaped portion in the circumferential direction and that is arc-shaped toward one side in the circumferential direction as it moves radially outward, a first arc-shaped portion that is located radially outward from the orbital path and connects outer ends of the first arc-shaped portion and the second arc-shaped portion, and a second arc-shaped portion that is radially inward from the orbital path and connects inner ends of the first arc-shaped portion and the second arc-shaped portion.

[0012] A third aspect is a sputtering apparatus according to the first or second aspect, wherein the magnet section includes a plurality of first magnets, each having a first magnetic pole face, arranged along an arc-shaped first virtual line that approaches one side in the circumferential direction as it moves radially outward, and a plurality of second magnets, each having a second magnetic pole face having a different magnetic pole from the first magnetic pole faces, arranged along an imaginary arc-shaped, annular second virtual line that surrounds a set of the plurality of first magnets.

[0013] A fourth aspect is a sputtering apparatus according to the third aspect, wherein the center of each of the plurality of first magnets is located on a virtual straight line passing through the revolution axis and the innermost magnet among the plurality of first magnets that overlap with the revolution path in a planar view, or on one side of the straight line in the circumferential direction.

[0014] A fifth aspect is a sputtering apparatus according to any one of the second to fourth aspects, wherein the first imaginary line extends along a portion of a logarithmic spiral. Effect of the Invention

[0015] According to the first aspect, the width of the race track crossed by the inner periphery of the substrate can be made smaller than the width of the race track crossed by the outer periphery of the substrate. This makes it possible to reduce the difference in thickness of the thin film formed on the substrate between the inner periphery and the outer periphery. In other words, the film can be formed on the substrate more uniformly.

[0016] According to the second aspect, the first and second arc-shaped portions of the racetrack extend across the revolution path from the inner periphery to the outer periphery in plan view, allowing a thin film to be formed over the entire first main surface of the substrate with a thickness according to the circumferential widths of the first and second arc-shaped portions.

[0017] According to the third aspect, the race track can be formed at low cost.

[0018] According to the fourth aspect, the circumferential width of the first and second arcuate portions of the racetrack can be increased toward the outside in the radial direction, which allows a thin film to be formed on the substrate with a more uniform thickness.

[0019] According to the fifth aspect, a film can be formed on a substrate with a more uniform thickness. [Brief description of the drawings]

[0020] [Figure 1]FIG. 1 is a side view illustrating an example of a configuration of a sputtering apparatus. [Diagram 2] FIG. 1 is a plan view illustrating an example of a configuration of a sputtering apparatus. [Diagram 3] FIG. 2 is a perspective view illustrating an example of a configuration of a substrate holding part and a heater. [Figure 4] FIG. 2 is a plan view illustrating a first example of a specific configuration of a magnet section. [Diagram 5] 4 is a diagram illustrating an example of the positions of a plurality of first magnets in an xy coordinate system. FIG. [Figure 6] 2 is a plan view showing a schematic example of the race track RT and the substrate W. FIG. [Figure 7] FIG. 13 is a diagram illustrating a second example of a specific configuration of the magnet portion. [Figure 8] FIG. 13 is a diagram illustrating a third example of a specific configuration of the magnet portion. [Figure 9] FIG. 2 is a plan view showing a schematic example of the configuration of a rotation and revolution mechanism. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, an embodiment will be described with reference to the accompanying drawings. Note that the components described in the embodiment are merely examples, and are not intended to limit the scope of the present disclosure. In the drawings, the dimensions or numbers of each part may be exaggerated or simplified as necessary for ease of understanding.

[0022] Furthermore, in the description below, even if ordinal numbers such as "first" or "second" are used, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and are not limited to the ordering that may result from these ordinal numbers.

[0023] When an expression indicating a relative or absolute positional relationship (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.) is used, the expression not only strictly indicates the positional relationship, but also indicates a state in which the relative positional relationship is displaced with respect to angle or distance within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating an equal state (e.g., "same," "equal," "homogeneous," etc.) is used, the expression not only strictly indicates a quantitatively equal state, but also indicates a state in which a difference exists within a range in which a tolerance or similar function is obtained, unless otherwise specified. When an expression indicating a shape (e.g., "square shape" or "cylindrical shape," etc.) is used, the expression not only strictly indicates the shape geometrically, but also indicates a shape having, for example, unevenness or chamfering within a range in which a similar effect is obtained, unless otherwise specified. When an expression "comprises," "has," "includes," "includes," or "has" a component is used, the expression is not an exclusive expression that excludes the presence of other components. When the phrase "at least one of A, B, and C" is used, the phrase includes A only, B only, C only, any two of A, B, and C, and all of A, B, and C.

[0024] <Sputtering equipment> Fig. 1 is a side view that shows a schematic example of the configuration of a sputtering apparatus 100. Fig. 2 is a plan view that shows a schematic example of the configuration of a sputtering apparatus 100. Fig. 1 shows an example of the configuration of a cross section taken along the line AA of Fig. 2.

[0025] The sputtering apparatus 100 is a film formation apparatus that performs a film formation process by reactive sputtering on a substrate W. The substrate W is, for example, a sapphire substrate. The substrate W has, for example, a disk shape. Note that the material and shape of the substrate W are not limited to these and can be changed as appropriate.

[0026] The sputtering apparatus 100 includes a chamber 1 , a sputtering section 2 , a plasma section 3 , a substrate holding section 4 , a suction mechanism 5 , and a control section 6 .

[0027] The chamber 1 has a hollow box shape. The internal space of the chamber 1 corresponds to a processing space in which a film formation process is performed on a substrate W. The chamber 1 may also be called a vacuum chamber.

[0028] The suction mechanism 5 has a suction port 5a, which opens into the processing space. The suction mechanism 5 is controlled by a control unit 6. The suction mechanism 5 reduces the pressure inside the chamber 1 by sucking gas from the suction port 5a, and adjusts the pressure to within a predetermined reduced pressure range. As the suction mechanism 5, for example, a vacuum pump, or more specifically, a turbomolecular pump, can be used.

[0029] The processing space in the chamber 1 has a sputtering space 1a and a plasma space 1b arranged in the circumferential direction about a predetermined revolution axis Q1. The revolution axis Q1 is an axis along the vertical direction. A physical structure (e.g., a partition plate) for dividing the sputtering space 1a and the plasma space 1b may or may not be provided in the chamber 1.

[0030] As described later, a target 21 of the sputtering unit 2 is provided in the sputtering space 1a, and sputtering is performed on the target 21. Also, as described later, a reactive gas is supplied to the plasma space 1b by the plasma unit 3, and the reactive gas is converted into plasma by the plasma unit 3.

[0031] The substrate holder 4 is provided in the chamber 1. While holding the substrate W, the substrate holder 4 revolves the substrate W around the revolution axis Q1, and moves the substrate W alternately between the sputtering space 1a and the plasma space 1b. FIG. 3 is a perspective view that shows an example of the configuration of the substrate holder 4 and a heater 11 described later. In the example of FIG. 3, the substrate holder 4 holds the multiple substrates W in a state where they are arranged along the circumferential direction about the revolution axis Q1. The substrate holder 4 holds each substrate W in a horizontal position. The horizontal position here means a position in which the thickness direction of the substrate W is along the vertical direction. With the multiple substrates W held by the substrate holder 4, the main surface (lower surface in the figure) Wa of each substrate W is exposed in the chamber 1 (see also FIG. 1).

[0032] The substrate holder 4 revolves the substrate W around the revolution axis Q1, so that each substrate W passes alternately through the sputtering space 1a and the plasma space 1b. As described below, when the substrate W passes through the sputtering space 1a, sputtered particles from the target 21 are deposited on the main surface Wa of the substrate W, and when the substrate W passes through the plasma space 1b, plasma particles generated by turning the reactive gas into plasma react with the sputtered particles on the main surface Wa of the substrate W. As a result, a predetermined thin film is formed on the main surface Wa of the substrate W.

[0033] Hereinafter, the path along which the substrate W revolves is also referred to as the revolution path R1 (see also Figures 2 and 3). The revolution path R1 has a circular shape centered on the revolution axis Q1. The inner peripheral edge of the revolution path R1 has a circular shape passing through the inner peripheral end of the substrate W closest to the revolution axis Q1, and the outer peripheral edge of the revolution path R1 has a circular shape passing through the outer peripheral end of the substrate W farthest from the revolution axis Q1. The radial width of the revolution path R1 is equal to the diameter of the substrate W. Hereinafter, the direction along which the revolution axis Q1 extends is also referred to as the axial direction, and the circumferential direction and radial direction about the revolution axis Q1 are simply referred to as the circumferential direction and the radial direction, respectively.

[0034] <Substrate holding part> The substrate holder 4 includes a holder 41 and a rotation drive unit 42. The holder 41 holds a plurality of substrates W arranged in a circumferential direction. Although the specific structure of the holder 41 is not particularly limited, for example, the holder 41 has a disk shape centered on the revolution axis Q1. The holder 41 may have a plurality of through holes 41a. The plurality of through holes 41a are formed, for example, at equal intervals along the circumferential direction and penetrate the holder 41 in the axial direction. Each through hole 41a has a stepped shape that narrows toward the vertically downward side, and each substrate W is disposed in the through hole 41a. The holder 41 supports the periphery of each substrate W at the stepped portion of each through hole 41a.

[0035] The rotation drive unit 42 is controlled by the control unit 6 and rotates the holder 41 around the revolution axis Q1. As a result, the multiple substrates W held by the holder 41 revolve around the revolution axis Q1. The rotation drive unit 42 includes, for example, a motor and a shaft. The motor is connected to the holder 41 via the shaft. The upper end of the shaft is connected to the underside of the holder 41 and extends along the revolution axis Q1. The motor rotates the shaft around the revolution axis Q1, thereby rotating the holder 41 around the revolution axis Q1.

[0036] <Heater> The heater 11 is disposed vertically above the substrate holder 4 within the chamber 1. The heater 11 is controlled by the controller 6 and heats the multiple substrates W held by the substrate holder 4. The heater 11 adjusts the temperature of the substrates W to within a temperature range suitable for the film formation process. The heater 11 has, for example, a circular ring shape centered on the revolution axis Q1. The heater 11 may be, for example, an electric resistance heater including a heating wire, or may be an optical heater including a light source that irradiates the substrates W with heating light (for example, infrared light).

[0037] <Sputtering section> The sputtering unit 2 includes a target 21, a sputtering gas supply unit 23, a first plasma generation unit 25 (corresponding to the plasma generation unit), and a magnet unit 24. In the example of Fig. 2, the sputtering gas supply unit 23 and the first plasma generation unit 25 are omitted from illustration in order to avoid complication of the drawing.

[0038] <Target> The target 21 is provided in the sputtering space 1a and faces the substrate holder 4 in the axial direction. More specifically, the target 21 is provided at a position facing a part of the revolution path R1 of the substrate W in the axial direction. The point of the target 21 closest to the revolution axis Q1 is located on the inner peripheral edge of the revolution path R1 or radially inward from the inner peripheral edge. The point of the target 21 farthest from the revolution axis Q1 is located on the outer peripheral edge of the revolution path R1 or radially outward from the outer peripheral edge. In the example of FIG. 1, the target 21 is provided vertically below the substrate holder 4.

[0039] The target 21 has, for example, a plate-like shape, and in the example of FIG. 2, has a rectangular shape in a plan view. Note that the plan view here refers to a view in which the line of sight is along the axial direction. The target 21 has a first main surface 21a and a second main surface 21b. The second main surface 21b is the surface opposite to the first main surface 21a. The target 21 is held by a target holder 22. The target holder 22 holds the target 21 in a horizontal position with the first main surface 21a of the target 21 facing the substrate holder 4. The horizontal position here refers to a position in which the thickness direction of the target 21 is along the vertical direction. When the target 21 is held by the target holder 22, the first main surface 21a of the target 21 is exposed to the inside of the chamber 1.

[0040] The material of the target 21 is selected depending on the type of thin film to be formed on the main surface Wa of the substrate W. For example, when a gallium nitride film or a gallium oxide film is to be formed on the main surface Wa of the substrate W, the target 21 contains gallium. As a more specific example, the target 21 is a metal target made of gallium.

[0041] <Sputtering gas supply unit> The sputtering gas supply unit 23 supplies the sputtering gas to the sputtering space 1a. The sputtering gas is an inert gas, for example, a rare gas. For example, at least one of argon gas and xenon gas can be used as the rare gas. In the example of FIG. 1, the sputtering gas supply unit 23 includes an air supply pipe 231, a valve 232, and a flow rate adjustment unit 233. A sputtering gas supply source 234 is connected to the upstream end of the air supply pipe 231. The sputtering gas supply source 234 supplies the sputtering gas to the upstream end of the air supply pipe 231. The air supply pipe 231 has a first air supply port 23a (corresponding to an air supply port) that opens in the sputtering space 1a. The sputtering gas flows through the air supply pipe 231 and flows out from the first air supply port 23a into the sputtering space 1a. A part of this sputtering gas flows into the space between the revolution path R1 and the target 21.

[0042] Valve 232 is provided in air supply pipe 231 and opens and closes air supply pipe 231. Flow rate adjustment unit 233 is provided in air supply pipe 231 and adjusts the flow rate of the sputtering gas flowing through air supply pipe 231. Flow rate adjustment unit 233 is, for example, a mass flow controller. Valve 232 and flow rate adjustment unit 233 are controlled by control unit 6.

[0043] <First plasma generating section> The first plasma generating unit 25 generates plasma from the sputtering gas in the sputtering space 1a, and causes ions (e.g., argon ions) in the plasma to collide with the first main surface 21a of the target 21. Due to the collision, sputtered particles (e.g., gallium particles) fly out from the first main surface 21a of the target 21. The sputtered particles move vertically upward toward the substrate holding unit 4.

[0044] In the example of FIG. 1, the first plasma generating unit 25 includes a first power supply 251. The first power supply 251 is controlled by the control unit 6 and supplies direct current or alternating current (high frequency) power for sputtering to the target 21. Here, since the target 21 is a conductive metal target, a direct current power supply can be applied as the first power supply 251. The first power supply 251 outputs a direct current voltage between the target 21 and the chamber 1, for example. More specifically, the first power supply 251 outputs a direct current voltage so that a negative potential is applied to the target 21. As exemplified in FIG. 1, the chamber 1 may be grounded. In addition, the substrate holder 4 may be electrically connected to the chamber 1.

[0045] When the first power supply 251 supplies DC power to the target 21, an electric field for plasma is generated around the target 21. Then, when the electric field acts on the sputtering gas, the sputtering gas is ionized and turned into plasma. Ions in the plasma collide with the first main surface 21a of the target 21, and sputtering of the target 21 is performed.

[0046] <Magnet section> The magnet section 24 is provided on the opposite side of the revolution path R1 with respect to the target 21 (vertically below in FIG. 1). In the example of FIG. 1, the magnet section 24 is provided vertically below the bottom of the chamber 1. The magnet section 24 is also provided at a position aligned with the target 21 in the axial direction. The magnet section 24 forms a racetrack RT, which is a magnetic field, on the first main surface 21a side of the target 21. More specifically, the racetrack RT is formed in a space in contact with the first main surface 21a of the target 21. Since the racetrack RT can enclose electrons, a high-concentration plasma can be generated inside the racetrack RT. Therefore, the magnet section 24 can improve the sputtering speed for the target 21, and can improve the film formation rate.

[0047] An example of a specific shape of the race track RT in a plan view and an example of a specific internal configuration of the magnet portion 24 that forms the race track RT will be described in detail later.

[0048] <Chimney> In the example of FIG. 1, the sputtering unit 2 also includes a chimney 27. The chimney 27 is provided in the sputtering space 1a. The chimney 27 has a hollow box shape and surrounds the periphery of the target 21. An upper plate portion 271 of the chimney 27 has an opening 27a that faces the target 21 in the axial direction. The opening 27a penetrates the upper plate portion 271 in the axial direction. Sputtered particles ejected from the first main surface 21a of the target 21 pass through the opening 27a and move toward the substrate holding unit 4.

[0049] <Plasma section> The plasma unit 3 has a second gas inlet 31a that opens into the plasma space 1b, and supplies reactive gas from the second gas inlet 31a to the plasma space 1b. The plasma unit 3 also converts the reactive gas in the plasma space 1b into plasma. Specifically, the plasma unit 3 includes a reactive gas supply unit 31 and a second plasma generation unit 33.

[0050] <Reactive gas supply unit> In the example of FIG. 1, the reactive gas supply unit 31 includes an air supply pipe 311, a valve 312, and a flow rate adjustment unit 313. The upstream end of the air supply pipe 311 is connected to a reactive gas supply source 315. The reactive gas supply source 315 supplies reactive gas to the upstream end of the air supply pipe 311. The air supply pipe 311 has a second air supply port 31a. In the example of FIG. 1, the opening direction of the second air supply port 31a of the air supply pipe 311 is parallel to the axial direction and toward the substrate holder 4. In the example of FIG. 1, the air supply pipe 311 branches into two, and the downstream end of each of the two branches corresponds to the second air supply port 31a. In the example of FIG. 1, the two second air supply ports 31a are provided with a gap in the radial direction.

[0051] As the reactive gas, a gas according to the type of thin film to be formed on the main surface Wa of the substrate W can be applied. For example, when a gallium nitride film is formed on the main surface Wa of the substrate W, a gas containing nitrogen is applied as the reactive gas. As a specific example, the reactive gas contains at least one of nitrogen (N2) gas and ammonia (NH3) gas. When a gallium oxide film is formed on the main surface Wa of the substrate W, a gas containing oxygen is applied as the reactive gas. As the reactive gas containing oxygen, for example, oxygen (O2) gas can be applied.

[0052] Valve 312 is provided in air supply pipe 311 and opens and closes air supply pipe 311. Flow rate adjustment unit 313 is provided in air supply pipe 311 and adjusts the flow rate of the reactive gas flowing through air supply pipe 311. Flow rate adjustment unit 313 is, for example, a mass flow controller. Valve 312 and flow rate adjustment unit 313 are controlled by control unit 6.

[0053] In the following, a case will be mainly described in which gallium is used as the target 21 and nitrogen gas is used as the reactive gas.

[0054] <Second plasma generating section> The second plasma generating unit 33 turns the nitrogen gas supplied from the second gas supply port 31a into the chamber 1 into plasma. Highly reactive nitrogen particles (ions or radicals) generated by the plasma move toward the substrate holding unit 4 and nitride the gallium on the main surface Wa of the substrate W.

[0055] In the example of FIG. 1, the second plasma generation unit 33 includes an inductive coupling antenna 331 and a second power source 332. The inductive coupling antenna 331 includes a U-shaped conductive member 3311. The conductive member 3311 is provided in the chamber 1 with both ends positioned vertically downward, and more specifically, is attached to the bottom of the chamber 1. In the example of FIG. 2, the conductive member 3311 is provided with both ends aligned along the circumferential direction. Both ends of the conductive member 3311 penetrate, for example, the bottom of the chamber 1, and the both ends are electrically connected to the second power source 332. The conductive member 3311 functions as an electrode (antenna) for generating plasma.

[0056] 1 and 2, a plurality of (here, two) inductive coupling antennas 331 are provided, and each inductive coupling antenna 331 is provided near each second air supply port 31a. In the example of Fig. 1 and 2, the inductive coupling antenna 331 is provided so as to face the second air supply port 31a of the air supply pipe 311 in the axial direction. In other words, the second air supply port 31a is located between both ends of the inductive coupling antenna 331 (conductive member 3311) in a plan view.

[0057] The second power supply 332 supplies high-frequency power to the inductively coupled antenna 331. The second power supply 332 includes, for example, an inverter circuit and a matching circuit, and is controlled by the control unit 6. When the second power supply 332 applies a high-frequency voltage to both ends of the inductively coupled antenna 331, a high-frequency induction magnetic field for generating plasma is generated around the inductively coupled antenna 331, and this acts on the reactive gas, ionizing the reactive gas and turning it into plasma. Such inductively coupled plasma has a spatial density of electrons of 3×10 10 pieces / cm 3 This is a high density plasma.

[0058] <Control Unit> The control unit 6 is an electronic circuit device and may have, for example, a data processing device and a storage unit. The data processing device may be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit may have a non-transient storage unit (for example, a ROM (Read Only Memory) or a hard disk) and a temporary storage unit (for example, a RAM (Random Access Memory)). The non-transient storage unit may store, for example, a program that defines the processing to be executed by the control unit 6. The data processing device executes this program, so that the control unit 6 can execute the processing defined in the program. Of course, part or all of the processing executed by the control unit 6 may be executed by a hardware circuit such as a logic circuit.

[0059] <Example of sputtering equipment operation> Next, an example of the operation of the sputtering apparatus 100 will be outlined. First, a substrate transport unit (not shown) transports a plurality of unprocessed substrates W into the chamber 1. As a result, the substrate holder 4 holds the plurality of substrates W. Next, the suction mechanism 5 starts to suck the gas in the chamber 1, and the heater 11 starts to heat the substrates W. The suction mechanism 5 adjusts the pressure in the chamber 1 to within a reduced pressure range suitable for the film formation process, and the heater 11 adjusts the temperature of the substrates W to within a temperature range suitable for the film formation process.

[0060] Next, the sputtering gas supply unit 23 starts supplying sputtering gas, and the reactive gas supply unit 31 starts supplying reactive gas, while the first plasma generation unit 25 and the second plasma generation unit 33 convert the gas into plasma. That is, the control unit 6 causes the first power supply 251 and the second power supply 332 to output voltages. Furthermore, the rotation drive unit 42 rotates the holder 41 around the revolution axis Q1. As a result, the multiple substrates W revolve around the revolution axis Q1.

[0061] As the substrates W revolve around the revolution axis Q1, each substrate W passes alternately through the sputtering space 1a and the plasma space 1b. This causes gallium particles to be deposited on the main surface Wa of the substrate W, and gallium on the main surface Wa of the substrate W to be nitrided alternately, forming a gallium nitride film on the main surface Wa of the substrate W.

[0062] When a gallium nitride film is formed on the substrate W with a sufficient thickness by the film formation process, the supply of the sputtering gas and the reactive gas is stopped, the voltage output of the first power supply 251 and the second power supply 332 is stopped, heating by the heater 11 is stopped, and depressurization by the suction mechanism 5 is stopped. Next, the substrate transport unit unloads the processed substrate W from the chamber 1.

[0063] As described above, the sputtering apparatus 100 can form a gallium nitride film on the main surface Wa of the substrate W.

[0064] <Magnet section> Next, the magnet section 24 will be described in detail. FIG. 4 is a plan view that shows a schematic first example of a specific configuration of the magnet section 24. The magnet section 24 includes a first magnet 241 and a second magnet 242. The first magnet 241 has a first magnetic pole surface 241a. The first magnet 241 is provided in a position in which the first magnetic pole surface 241a faces the target 21 side (here, the upper side). The second magnet 242 has a second magnetic pole surface 242a having a different magnetic pole polarity from the first magnetic pole surface 241a. One of the first magnetic pole surface 241a and the second magnetic pole surface 242a is a magnetic pole surface of the N pole, and the other is a magnetic pole surface of the S pole. The second magnet 242 is provided in a position in which the second magnetic pole surface 242a faces the target 21 side. The magnetic flux between the first magnetic pole surface 241a and the second magnetic pole surface 242a passes through a space facing the first main surface 21a of the target 21. In FIG. 1, the flow of the magnetic flux is shown typically by a two-dot chain line. As a result, a racetrack RT is formed on the first main surface 21a side of the target 21. The racetrack RT is a magnetic field formed by the horizontal component of the magnetic flux in the space. In the example of FIG. 4, the racetrack RT formed on the first main surface 21a side of the target 21 is shown typically superimposed on the magnet section 24.

[0065] 4, the magnet portion 24 forms an arc-shaped, annular racetrack RT that extends radially outward and toward one side in the circumferential direction. The one side in the circumferential direction here may be the downstream side in the revolution direction of the substrate W, or may be the upstream side in the revolution direction.

[0066] In the example of FIG. 4, the race track RT has a first arc-shaped portion RTa, a second arc-shaped portion RTb, a first circular arc portion RTc, and a second circular arc portion RTd. Each of the first arc-shaped portion RTa and the second arc-shaped portion RTb has an arc-shaped line segment shape that moves toward one side in the circumferential direction as it moves toward the outside in the radial direction. The first arc-shaped portion RTa is located on one side in the circumferential direction of the second arc-shaped portion RTb, and is spaced apart from the second arc-shaped portion RTb in the circumferential direction. In a plan view, the outer end of the first arc-shaped portion RTa (i.e., the outer end in the radial direction) is located radially outward from the revolution path R1. Also, in a plan view, the inner end of the first arc-shaped portion RTa (i.e., the inner end in the radial direction) is located radially inward from the revolution path R1. Similarly, the outer end of the second arc-shaped portion RTb is located radially outward from the revolution path R1, and the inner end of the second arc-shaped portion RTb is located radially inward from the revolution path R1. In other words, in a plan view, each of the first arc-shaped portion RTa and the second arc-shaped portion RTb crosses the revolution path R1 from the inner periphery to the outer periphery.

[0067] In plan view, the first arc portion RTc is located radially outward from the revolution path R1 and connects the outer ends of the first arc portion RTa and the second arc portion RTb. The first arc portion RTc has an arc shape that bulges toward one side in the circumferential direction. The second arc portion RTd is located radially inward from the revolution path R1 in plan view and connects the inner ends of the first arc portion RTa and the second arc portion RTb. The second arc portion RTd has an arc shape that bulges toward the inside in the radial direction.

[0068] In the example of FIG. 4, a plurality of first magnets 241 and a plurality of second magnets 242 are shown as the magnet section 24 that forms such a race track RT. In the example of FIG. 4, the plurality of first magnets 241 are arranged along a first virtual line VL1. The first virtual line VL1 is an arc-shaped virtual line that moves toward one side in the circumferential direction as it moves toward the outside in the radial direction. As shown in FIG. 4, the first virtual line VL1 may be a virtual line segment having both ends. In the example of FIG. 4, the plurality of first magnets 241 are arranged along the first virtual line VL1 from the inner peripheral edge to the outer peripheral edge of the revolution path R1 in a plan view. In the example of FIG. 4, each of the first magnets 241 has a circular shape in a plan view. The first magnets 241 may be magnets of the same specifications. The first magnets 241 may be arranged in an orientation in which the first magnetic pole surface 241a is parallel to the first main surface 21a of the target 21.

[0069] In the example of FIG. 4, the second magnets 242 are arranged along a second virtual line VL2. The second virtual line VL2 is an arc-shaped, annular virtual line surrounding a set of the first magnets 241 in a plan view. The second virtual line VL2 can also be said to be a virtual closed curve. The interval between a set of the first magnets 241 and a set of the second magnets 242 may be equal in width. In the example of FIG. 4, the second magnets 242 located on one side of the circumferential direction with respect to the first magnet 241 are arranged along an arc-shaped virtual line segment from the inner peripheral edge to the outer peripheral edge of the revolution path R1. Similarly, the second magnets 242 located on the other side of the circumferential direction with respect to the first magnet 241 are also arranged along an arc-shaped virtual line segment from the inner peripheral edge to the outer peripheral edge of the revolution path R1. Similar to the first virtual line VL1, these virtual line segments are also arc-shaped line segments that move toward one side of the circumferential direction as they move toward the outside in the radial direction. 4, each second magnet 242 has a circular shape in a plan view. The second magnets 242 may be magnets of the same specifications. The first magnet 241 and the second magnet 242 may be magnets of the same specifications.

[0070] The first magnet 241 and the second magnet 242 may be arranged, for example, on the same plane. The first magnet 241 and the second magnet 242 may be disposed on a yoke (not shown) formed of a hard magnetic material. The yoke may be provided on the opposite side of the first magnet 241 and the second magnet 242 from the target 21.

[0071] As described above, the race track RT is formed by the magnetic flux between the first magnet 241 and the second magnet 242. Therefore, in a plan view, the first virtual line VL1 may be surrounded by the race track RT. On the other hand, the second virtual line VL2 may surround the race track RT in a plan view.

[0072] Next, the positions of the multiple first magnets 241 will be described using an xy coordinate system. Here, of the multiple first magnets 241 that overlap with the revolution path R1 in a plan view, the first magnet 241 located at the innermost radial direction is called the innermost magnet 2411. The x-axis is set to pass through the center of the innermost magnet 2411 and the revolution axis Q1. The y-axis is an axis perpendicular to the x-axis. The intersection of the x-axis and the y-axis (i.e., the origin) can be set to the revolution axis Q1. Here, the position of the center of the first magnet 241 is applied to the position of the first magnet 241.

[0073] 5 is a diagram showing an example of the positions of the first magnets 241 in the xy coordinate system. In the example of FIG. 5, the centers of the first magnets 241 are located only in an area where the y-axis position is zero or positive. In other words, the center of each of the first magnets 241 is provided on a virtual straight line VL3 (= a virtual line along the x-axis) or on one circumferential side of the straight line VL3. In other words, the first magnets 241 are provided so as to avoid the area on the other circumferential side of the straight line VL3. In other words, the first magnets 241 are not provided in the area on the other circumferential side of the straight line VL3.

[0074] Here, the position coordinates (xn, yn) of the first magnet 241 are introduced for explanation. n is a number for identifying the first magnet 241, and corresponds to the order of the first magnets 241 arranged from the inside to the outside in the radial direction. For example, the number n of the first magnet 241 (innermost magnet 2411) located on the innermost circumference is 1. Here, the intervals on the x axis and the y axis between the adjacent (n-1)-th first magnet 241 and the n-th first magnet 241 are respectively the interval dxn and the interval dyn. In the example of FIG. 5, the multiple first magnets 241 are arranged so that the ratio of the interval dyn to the interval dxn (=dyn / dxn) increases monotonically and non-decreasingly with respect to an increase in n. In other words, the multiple first magnets 241 are arranged so that the ratio increases monotonically and non-decreasingly toward the outside in the radial direction. The ratio may increase monotonically toward the outside in the radial direction.

[0075] In the example of FIG. 5, the first first magnet 241 and the second first magnet 241 are located on the x-axis, so the above ratio for the first first magnet 241 and the second first magnet 241 is zero.

[0076] Here, an angle φn is introduced between the x-axis and a virtual line passing through the center of the (n-1)th first magnet 241 and the center of the nth first magnet 241. In the example of FIG. 5, the multiple first magnets 241 are arranged so that the angle φn increases monotonically and non-decreasingly with increasing n. In other words, the multiple first magnets 241 are arranged so that the angle φn increases monotonically and non-decreasingly as it moves radially outward. The angle φn may also increase monotonically as it moves radially outward. Note that in the example of FIG. 5, the angle φn for the first first magnet 241 and the second first magnet 241 is zero.

[0077] The above description also applies to the positions of the second magnets 242 that overlap the revolution path R1 in a plan view. For example, the second magnets 242 that overlap the revolution path R1 and are located on one side of the first magnet 241 in the circumferential direction are arranged along an arc-shaped virtual line segment, similar to the first virtual line VL1. In this structure, the second magnets 242 can be arranged such that the ratio for the second magnets 242 increases monotonically and non-decreasingly toward the radially outward direction. Similarly, the second magnets 242 can be arranged such that the angle φn for the second magnets 242 increases monotonically and non-decreasingly toward the radially outward direction.

[0078] The second magnets 242 that overlap the revolution path R1 and are located on the other circumferential side of the first magnet 241 are also arranged along an arc-shaped virtual line segment, similar to the first virtual line VL1. In this structure, the second magnets 242 can be arranged such that the ratio for the second magnets 242 increases monotonically and non-decreasingly toward the radially outward side. Similarly, the second magnets 242 can be arranged such that the angle φn for the second magnets 242 increases monotonically and non-decreasingly toward the radially outward side.

[0079] Such a magnet section 24 can form an arc-shaped, annular racetrack RT on the first main surface 21a side of the target 21. In the above example, the intervals between a set of the multiple first magnets 241 and a set of the multiple second magnets 242 are approximately equal. This makes it possible to make the magnetic flux density of the racetrack RT more uniform.

[0080] Fig. 6 is a plan view showing a schematic example of the racetrack RT and the substrate W. In the example of Fig. 6, the substrate W moving on the revolution path R1 is shown. In the example of Fig. 6, the substrate W is shown at different times. The substrate W crosses the racetrack RT along the circumferential direction about the revolution axis Q1.

[0081] Therefore, the width of the racetrack RT across which the substrate W crosses will be considered. In other words, the width of the racetrack RT along the circumferential direction will be considered. As shown in Fig. 6, the first arc-shaped portion RTa of the racetrack RT extends to one side in the circumferential direction as it moves radially outward, so that the circumferential width da of the first arc-shaped portion RTa increases monotonically and non-decreasingly as it moves radially outward, at least in the region overlapping with the revolution path R1. The width da may also increase monotonically as it moves radially outward, at least in the region overlapping with the revolution path R1.

[0082] The circumferential width db of the second arc-shaped portion RTb of the race track RT, like the width da, increases monotonically and non-decreasingly as it moves radially outward, at least in the region overlapping with the revolution path R1. The width db may also increase monotonically as it moves radially outward.

[0083] Such a race track RT can be realized, for example, by setting the first virtual line VL1 as follows. That is, the first virtual line VL1 is set so that the first virtual line VL1 has a shape that follows a part of a logarithmic spiral. The logarithmic spiral is expressed by the following formula (1).

[0084] r=ae bθ (1) Here, r and θ indicate the position of the r axis and the angle of the θ axis in the polar coordinate system, where the r axis is an axis along the radial direction about the revolution axis Q1, and the θ axis is an axis along the circumferential direction about the revolution axis Q1. a and b are each set in advance by experiment or simulation. For example, a and b are selected so that the widths da and db each increase monotonically and non-decreasingly toward the outside in the radial direction.

[0085] Therefore, the more radially outward the portion of the substrate W, the greater the width (path length) at which it crosses the first arc-shaped portion RTa and the second arc-shaped portion RTb. For example, the more radially inward portion of the substrate W (i.e., the portion closer to the revolution axis Q1) crosses the first arc-shaped portion RTa and the second arc-shaped portion RTb of the racetrack RT with a relatively short width. Hereinafter, this portion of the substrate W will be referred to as the inner peripheral portion. On the other hand, the more radially outward portion of the substrate W crosses the first arc-shaped portion RTa and the second arc-shaped portion RTb with a relatively long width. Hereinafter, this portion of the substrate W will be referred to as the outer peripheral portion.

[0086] However, the moving speed of each part of the substrate W in the circumferential direction becomes higher toward the outside in the radial direction. Therefore, if the width da of the first arc-shaped portion RTa and the width db of the second arc-shaped portion RTb are constant regardless of the radial position, the outer peripheral portion will cross the first arc-shaped portion RTa and the second arc-shaped portion RTb in a shorter time. In this case, the number of sputtered particles deposited on the outer peripheral portion will be relatively small, and the film thickness will be relatively small. In other words, the sputtered particles will be deposited non-uniformly on the main surface Wa of the substrate W.

[0087] In contrast, in this embodiment, the width da of the first arc-shaped portion RTa and the width db of the second arc-shaped portion RTb each increase monotonically and non-decreasingly toward the outside in the radial direction. Therefore, it is possible to reduce the difference between the time when the inner peripheral portion of the substrate W crosses each of the first arc-shaped portion RTa and the second arc-shaped portion RTb and the time when the outer peripheral portion of the substrate W crosses each of the first arc-shaped portion RTa and the second arc-shaped portion RTb. Therefore, the sputtering apparatus 100 can stack sputtered particles on the main surface Wa of the substrate W more uniformly. In other words, it is possible to reduce the difference in thickness between the inner peripheral portion and the outer peripheral portion of the thin film formed on the main surface Wa of the substrate W.

[0088] The width ratio of the width da at the outer periphery to the width da at the inner periphery of the revolution path R1 may be set to be greater than 1 and less than the following reference value. The reference value is, for example, twice the ratio of the outer diameter R1b to the inner diameter R1a of the revolution path R1 (=R1b / R1a). The width ratio may be set to the ratio of the outer diameter R1b to the inner diameter R1a.

[0089] In the above example, the first arc portion RTc of the race track RT is located radially outward from the revolution path R1 in a plan view, and the second arc portion RTd is located radially inward from the revolution path R1 in a plan view. Therefore, each of the first arc portion RTa and the second arc portion RTb of the race track RT crosses the revolution path R1 from the inner circumference side to the outer circumference side in a plan view. Therefore, the width da of the first arc portion RTa and the width db of the second arc portion RTb can be appropriately increased over the entire revolution path R1 from the inner circumference side to the outer circumference side.

[0090] Also, in the above example, the centers of the multiple first magnets 241 that overlap the revolution path R1 in plan view are each located on the straight line VL3 or on one circumferential side of the straight line VL3. The same is true for the multiple second magnets 242 that overlap the revolution path R1 in plan view. For this reason, the width da of the first arc-shaped portion RTa of the racetrack RT can be made shortest at the inner circumferential edge of the revolution path R1 and gradually lengthen toward the radially outer side. The same is true for the second arc-shaped portion RTb.

[0091] According to these, the sputtering apparatus 100 can deposit sputtered particles more uniformly over the entire main surface Wa of the substrate W. Therefore, the sputtering apparatus 100 can deposit sputtered particles with a more uniform film thickness over the entire main surface Wa of the substrate W. In turn, the sputtering apparatus 100 can form a thin film with a more uniform film thickness on the main surface Wa of the substrate W.

[0092] In the above example, the magnet section 24 includes a plurality of first magnets 241 and a plurality of second magnets 242. This allows the arrangement of the first magnets 241 and the second magnets 242 to form an arc-shaped, circular racetrack RT. Therefore, the magnet section 24 can form the racetrack RT having the above shape at low cost. In addition, since the positions of the first magnets 241 and the second magnets 242 can be adjusted individually, the shape of the racetrack RT can be easily adjusted.

[0093] Furthermore, in the above example, the sputtering apparatus 100 does not have a function of rotating the substrate W on its axis. In other words, the substrate holding part 4 revolves the substrate W around the revolution axis Q1 without rotating the substrate W on its axis. This allows the substrate holding part 4 to be realized with a simpler configuration. Furthermore, the maintenance cost of the substrate holding part 4 can be reduced.

[0094] <First Alternative> In the above example, the first magnets 241 are arranged along the first virtual line VL1, which is a virtual line segment, but this is not necessarily limited to this. FIG. 7 is a diagram that shows a second example of a specific configuration of the magnet unit 24. In the example of FIG. 7, the first magnets 241 are also arranged along the first virtual line (i.e., a closed curve) that is arc-shaped and annular, like the second magnets 242. In this structure, among the first magnets 241, the first magnets 241 that overlap the revolution path R1 in a plan view are arranged along the arc-shaped virtual line segment. In the example of FIG. 7, the first magnets 241 located on one side in the circumferential direction are arranged along the virtual line VL1a, and the first magnets 241 located on the other side in the circumferential direction are arranged along the virtual line VL1b. Each of the virtual line VL1a and the virtual line VL1b is an arc-shaped virtual line segment that extends radially outward toward one side in the circumferential direction. The imaginary line VL1a is located on one side in the circumferential direction with respect to the imaginary line VL1b.

[0095] <Second Alternative> In the above example, the race track RT has a shape of a closed curve. However, this is not necessarily limited to this. For example, the race track RT may have an arc-like and annular shape in which a plurality of V-shaped straight lines are connected. For example, each of the first magnets 241 and each of the second magnets 242 may have a rod-like shape in a plan view. Each of the first magnets 241 may be arranged with its longitudinal direction aligned along the first virtual line VL1, and each of the second magnets 242 may be arranged with its longitudinal direction aligned along the second virtual line VL2.

[0096] <Third Alternative> In the above example, the magnet unit 24 includes a plurality of first magnets 241 and a plurality of second magnets 242. However, this is not necessarily limited to this. FIG. 8 is a diagram that shows a schematic diagram of a third example of a specific configuration of the magnet unit 24. As shown in FIG. 8, the magnet unit 24 may include a single first magnet 241 and a single second magnet 242. The first magnet 241 extends along a first virtual line VL1 in a plan view. In the example of FIG. 8, the first magnet 241 has an arc-shaped line segment shape that approaches one side in the circumferential direction as it moves radially outward. The second magnet 242 extends along a second virtual line VL2 in a plan view. In the example of FIG. 8, the second magnet 242 has an arc-shaped and annular shape that approaches one side in the circumferential direction as it moves radially outward.

[0097] 8, the racetrack RT is formed by a single first magnet 241 and a single second magnet 242. Therefore, the magnet section 24 can form a more uniform racetrack RT.

[0098] <Fourth Alternative> In the above example, the substrate holder 4 does not have a function of rotating the substrate W on its axis, but this is not necessarily limited to this. The substrate holder 4 may have a rotation / revolution mechanism 41A that rotates the substrate W on its axis while revolving it around its axis. FIG. 9 is a plan view that shows a schematic example of the configuration of the rotation / revolution mechanism 41A. As shown in FIG. 9, the rotation / revolution mechanism 41A is, for example, a planetary gear mechanism. The rotation / revolution mechanism 41A includes a sun gear 411, a plurality of planetary gears 412, and an internal gear 413. The sun gear 411 is an external gear and has a disk shape centered on the revolution axis Q1, and a plurality of projections and recesses are formed on its outer circumferential surface. The sun gear 411 is rotated around the revolution axis Q1 by the rotation drive unit 42. Specifically, a shaft of the rotation drive unit 42 is connected to the sun gear 411, and a motor of the rotation drive unit 42 rotates the shaft around the revolution axis Q1 to rotate the sun gear 411.

[0099] The internal gear 413 is provided so as to surround the sun gear 411 at a distance. The internal gear 413 has an annular shape centered on the revolution axis Q1, and a plurality of projections and recesses are formed on its inner circumferential surface. The internal gear 413 is fixed to the chamber 1.

[0100] The multiple planetary gears 412 are external gears and are provided between the sun gear 411 and the internal gear 413. The multiple planetary gears 412 are provided side by side along the circumferential direction of the revolution axis Q1. Here, six planetary gears 412 are provided. Each planetary gear 412 has a disk shape centered on the corresponding rotation axis Q2, and has projections and recesses formed on its outer circumferential surface. The planetary gears 412 are supported rotatably around the rotation axis Q2, and mesh with the sun gear 411 and the internal gear 413.

[0101] The planetary gear 412 is connected to a holder (not shown) that holds the substrate W. The holder may, for example, suck the upper surface of the substrate W, or may hold an edge of the substrate W. The holder holds the substrate W in a horizontal position so that the main surface Wa of the substrate W is exposed in the chamber 1.

[0102] When the rotation drive unit 42 rotates the sun gear 411, the sun gear 411 rotates around the revolution axis Q1. As a result, each planetary gear 412 meshing with the sun gear 411 revolves around itself while also meshing with the internal gear 413. In other words, the planetary gear 412 revolves around the revolution axis Q1 while rotating around the rotation axis Q2. As a result, the holder connected to the planetary gear 412 and the substrate W held by the holder revolve around themselves.

[0103] In the film formation process, the substrate holder 4 revolves the substrates W around the revolution axis Q1 while rotating each substrate W around its rotation axis Q2. Thus, the substrates W pass alternately through the sputtering space 1a and the plasma space 1b while rotating around the rotation axis Q2. This allows the gallium particles and nitrogen particles to act more uniformly on the main surface Wa of the substrate W, and allows the gallium nitride film to be formed more uniformly on the main surface Wa of the substrate W.

[0104] <Fifth Alternative Form> In the above example, the second plasma generating section 33 generates inductively coupled plasma, but this is not necessarily limited to this, and plasma may be generated by other methods.

[0105] <Sixth Alternative Form> In the above example, the substrate holder 4 holds a plurality of substrates W, but this is not necessarily limited to this. The substrate holder 4 may hold a single substrate W. In this case, the substrate W passes alternately through the sputtering space 1a and the plasma space 1b, so that the deposition of gallium particles on the main surface Wa of the substrate W and the nitridation of gallium on the main surface Wa of the substrate W can be alternated. On the other hand, when the substrate holder 4 holds a plurality of substrates W, the processing throughput can be improved.

[0106] As described above, the sputtering apparatus 100 has been described in detail, but the above description is merely an example in all respects, and the sputtering apparatus 100 is not limited thereto. It is understood that countless variations not illustrated can be envisioned without departing from the scope of this disclosure. The configurations described in the above embodiments and variations can be appropriately combined or omitted as long as they are not mutually contradictory. [Explanation of symbols]

[0107] 100 Sputtering Equipment 2 Sputtering section 21 Target 21a 1st main surface 21b 2nd principal surface 23 Sputtering gas supply unit 23a Air supply port (1st air supply port) 24 Magnet section 241 First Magnet 2411 Innermost magnet 241a 1st pole face 242 Second Magnet 242a 2nd pole face 25 Plasma generating unit (first plasma generating unit) 4 Board holding part Q1 Revolution axis R1 revolution path RT Race Track RTa 1st arcuate part RTb 2nd arcuate part RTc 1st arc section RTd Second arc section VL1 First virtual line VL2 Second virtual line VL3 Straight Line W substrate

Claims

1. a substrate holder that revolves the substrate around a predetermined revolution axis; a sputtering unit provided at a position facing a part of a circular revolution path along which the substrate is revolved by the substrate holding unit; Equipped with The sputtering unit includes: A target having a first main surface on the revolution path side and a second main surface on the opposite side to the first main surface; a sputtering gas supply unit having an inlet for supplying a sputtering gas between the target and the revolution path; a plasma generating unit that converts the sputtering gas into plasma; a magnet section that is provided on the opposite side of the revolution path with respect to the target and forms a race track, which is a magnetic field, on the first main surface side of the target; Including, A sputtering apparatus, wherein the magnet portion forms an arcuate, annular race track that extends toward one side in a circumferential direction about the revolution axis as it extends radially outward about the revolution axis.

2. 2. The sputtering apparatus according to claim 1, The magnet portion is a first arcuate portion that is arcuately oriented toward the one side in the circumferential direction as it extends toward the outside in the radial direction; a second arc-shaped portion that is positioned at a distance from the first arc-shaped portion in the circumferential direction and that extends toward the one side in the circumferential direction as it extends radially outward; a first arc portion located radially outboard of the revolution path and connecting outer ends of the first arc portion and the second arc portion; a second arc portion located radially inward of the revolution path and connecting inner ends of the first arc portion and the second arc portion; forming said racetrack comprising:

3. 3. The sputtering apparatus according to claim 1, The magnet portion is a plurality of first magnets, each having a first magnetic pole face, arranged along an arc-shaped first imaginary line that extends toward the one side in the circumferential direction as it extends toward the outside in the radial direction; a plurality of second magnets, each of which has a second pole face having a different magnetic pole from the first pole face, and which are arranged along an imaginary arc-shaped, annular second imaginary line surrounding a set of the plurality of first magnets; A sputtering apparatus comprising:

4. 4. The sputtering apparatus according to claim 3, A sputtering device in which the centers of each of the multiple first magnets are located on a virtual straight line passing through the revolution axis and an innermost magnet among the multiple first magnets that overlap with the revolution path in a planar view, or on one side of the straight line in the circumferential direction.

5. The sputtering apparatus according to claim 2 or 3, The first imaginary line follows a portion of a logarithmic spiral.

Images