Electronic equipment
Patent Information
- Application Number
- JP2023137530
- Authority / Receiving Office
- JP · JP
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2023-08-25
- Publication Date
- 2025-03-07
Smart Images

Figure 2025031355000001_ABST
Abstract
Description
[Technical field]
[0001] The disclosure herein relates to electronic devices. [Background technology]
[0002] Patent Document 1 discloses an electronic device including a wiring member having a fusing portion and a sealing body that seals the wiring member. The contents of the prior art document are incorporated by reference as explanations of technical elements in this specification. [Prior art documents] [Patent documents]
[0003] [Patent Document 1] JP 2011-146539 A Summary of the Invention [Problem to be solved by the invention]
[0004] In Patent Document 1, the sealing body (molded member) is molded in a state where the mold for molding the sealing body is in contact with the surface of the fusion part (connecting part), thereby exposing at least a part of the fusion part from the sealing body. Therefore, there is a risk that the fusion part will not be able to exhibit the desired interruption characteristics due to dimensional variations in the fusion part and the mold, and variations in the relative positions of the fusion part and the mold.
[0005] Also known is an electronic device having a structure in which the fusing portion is sealed. In this structure, the molten fusing portion breaks through the sealing body due to an increase in pressure, is released to the outside of the sealing body, and leads to disconnection. For this reason, there is a risk that the fusing portion will not be able to exhibit the desired interruption characteristics due to variations in the thickness of the sealing body that covers the fusing portion. In the above-mentioned respects and other respects not mentioned, further improvements are required for electronic devices.
[0006] One disclosed object is to provide an electronic device that can exhibit desired interruption characteristics. [Means for solving the problem]
[0007] The symbols in parentheses in the claims, this section, and the technical concept section are examples showing the correspondence with the specific means described in the embodiments below as one aspect. The symbols in parentheses do not limit the technical scope.
[0008] An electronic device according to one embodiment of the present disclosure includes: a wiring member (40, 60) having a fusing portion (43, 63) extending in a predetermined direction; a sealant (30) for sealing the wiring member; Equipped with the wiring member has an extension portion (44, 64) which is provided integrally with and continuous with the fusing portion, at least a portion of which extends from the fusing portion in a direction different from the predetermined direction, and which melts with heat generated by the fusing portion when electricity is passed through the extension portion; The sealing body is configured to include at least a portion covering the outer peripheral surface of the extension portion, extends along the extension portion, opens onto the outer surface of the sealing body, and has an outflow passage (31) for allowing the fusion portion that melts when electricity is passed through and the extension portion to escape outside the sealing body.
[0009] According to the disclosed electronic device, the wiring member has an extension portion. The extension portion is configured to melt with heat generated by the melting portion due to the passage of electricity. The sealing body has an outflow passage originating from the extension portion, which is formed by covering the extension portion. The outflow passage is blocked by the extension portion before the extension portion melts, and functions as a passage for allowing the melted melting portion and the extension portion to escape to the outside of the sealing body when the extension portion melts. The melting portion that melts due to the passage of electricity can be allowed to escape to the outside of the sealing body through the outflow passage without contacting the melting portion with a mold for forming the sealing body. Thus, the desired interruption characteristics can be exhibited.
[0010] The various aspects disclosed in this specification adopt different technical means to achieve their respective objectives. The claims and the parenthetical symbols described in this section are merely illustrative of the corresponding relationship with the embodiments described below, and are not intended to limit the technical scope. The objectives, features, and effects disclosed in this specification will become clearer with reference to the following detailed description and the accompanying drawings. [Brief description of the drawings]
[0011] [Figure 1] FIG. 2 is a diagram showing an equivalent circuit of the electronic device according to the first embodiment. [Diagram 2] FIG. 2 is a plan view of the electronic device as seen from one side. [Diagram 3] FIG. [Figure 4] FIG. 2 is a side view seen from the Y1 direction. [Diagram 5] 3 is a cross-sectional view taken along line VV shown in FIG. 2. [Figure 6] 3 is a cross-sectional view taken along line VI-VI shown in FIG. 2. [Figure 7] FIG. 3 is a cross-sectional view taken along line VII-VII shown in FIG. [Figure 8] FIG. 5 is an enlarged view of region VIII shown in FIG. [Figure 9] 1 is a flowchart showing a manufacturing method. [Figure 10] FIG. 2 is a diagram showing a lead frame. [Figure 11] This is a side view seen from the Y2 direction. [Figure 12] FIG. 2 is a diagram showing the arrangement of semiconductor elements. [Figure 13] FIG. 13 is a diagram showing the arrangement of clips. [Figure 14] FIG. 13 is a diagram showing the molding of an encapsulant. [Figure 15] This is a side view seen from the Y3 direction. [Figure 16] FIG. [Figure 17] FIG. 2 is a diagram showing a cross-sectional shape of a lead frame. [Figure 18] FIG. [Figure 19] FIG. 13 is a diagram showing a state in which the molten portion flows out. [Figure 20] FIG. 11 is a plan view showing the state after the fusion portion has flowed out. [Figure 21] FIG. 11 is a cross-sectional view showing a state after the fusion portion has flowed out. [Figure 22] FIG. 11 is a plan view of the electronic device according to the second embodiment, as viewed from the rear surface side. [Diagram 23] FIG. 1 is a cross-sectional view of an electronic device. [Figure 24] FIG. 11 is a diagram showing an equivalent circuit of an electronic device according to a third embodiment. [Diagram 25] FIG. 2 is a plan view of the electronic device as seen from one side. [Figure 26] FIG. [Figure 27] This is a side view seen from the Y4 direction. [Figure 28] 26 is a cross-sectional view taken along line XXVIII-XXVIII shown in FIG. 25. [Figure 29] FIG. 13 is a plan view of an electronic device according to a fourth embodiment, seen from one side. [Diagram 30] 30 is a side view seen from the Y5 direction shown in FIG. 29. [Diagram 31] 30 is a cross-sectional view taken along line XXXI-XXXI shown in FIG. 29. [Diagram 32] FIG. 13 is a plan view of an electronic device according to a fifth embodiment, seen from one side. [Diagram 33] FIG. 1 is a side view seen from the X1 direction. [Diagram 34] 33 is a cross-sectional view taken along line XXXIV-XXXIV shown in FIG. 32. [Diagram 35] FIG. 13 is a plan view of an electronic device according to a sixth embodiment, seen from one side. [Diagram 36] FIG. [Figure 37] FIG. 36 is a cross-sectional view taken along line XXXVII-XXXVII shown in FIG. 35. [Figure 38]FIG. 13 is a plan view of an electronic device according to a seventh embodiment, seen from one side. [Figure 39] 39 is a cross-sectional view taken along line XXXIX-XXXIX shown in FIG. 38. [Diagram 40] FIG. 13 is a plan view of an electronic device according to an eighth embodiment, seen from one side. [Diagram 41] FIG. [Diagram 42] FIG. 13 is a plan view of an electronic device according to a ninth embodiment, seen from one side. [Diagram 43] 43 is a side view seen from the Y6 direction shown in FIG. 42. [Diagram 44] FIG. 43 is a cross-sectional view taken along line XLIV-XLIV shown in FIG. 42. [Diagram 45] FIG. 23 is a plan view of an electronic device according to a tenth embodiment, seen from one side. [Diagram 46] FIG. [Figure 47] FIG. 23 is a plan view of an electronic device according to an eleventh embodiment, seen from one side. [Figure 48] 48 is a cross-sectional view taken along line XLVIII-XLVIII shown in FIG. 47. [Figure 49] FIG. 23 is a plan view of an electronic device according to a twelfth embodiment, seen from one side. [Figure 50] FIG. [Figure 51] 50 is a side view seen from the Y7 direction shown in FIG. 49. [Figure 52] 50 is a cross-sectional view taken along line LII-LII shown in FIG. 49. [Figure 53] 23 is a cross-sectional view showing an extension portion in an electronic device according to a thirteenth embodiment. FIG. [Figure 54] FIG. 11 is a cross-sectional view showing another example. [Figure 55] FIG. 11 is a cross-sectional view showing another example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
[0012] Hereinafter, a number of embodiments will be described based on the drawings. In each embodiment, the same reference numerals are used to designate corresponding components, and duplicated descriptions may be omitted. When only a part of the configuration is described in each embodiment, the configuration of the other embodiment described above can be applied to the other parts of the configuration. In addition to the combination of configurations explicitly stated in the description of each embodiment, configurations of multiple embodiments can be partially combined together even if not explicitly stated, as long as there is no particular problem with the combination. Note that the description of A and / or B means at least one of A and B. In other words, it may include only A, only B, or both A and B.
[0013] (First embodiment) First, the circuit configuration of the electronic device will be described with reference to FIG.
[0014] <Circuit configuration of electronic device> FIG. 1 shows an equivalent circuit of an electronic device. The electronic device according to this embodiment provides upper and lower arm circuits 10 for one phase. The upper and lower arm circuits 10 constitute an inverter. The inverter is configured with upper and lower arm circuits 10 for three phases, that is, three electronic devices. The inverter is a DC-AC conversion circuit. The inverter converts a DC voltage into a three-phase AC voltage according to switching control by a control circuit (not shown), and outputs the voltage to a rotating electric machine.
[0015] The upper and lower arm circuit 10 has an upper arm 10H and a lower arm 10L. The upper and lower arm circuit 10 is a series circuit of the upper arm 10H and the lower arm 10L. In the series circuit, the upper arm 10H is a high-side arm, and the lower arm 10L is a low-side arm. Hereinafter, the upper arm 10H and the lower arm 10L may be simply referred to as arms 10H, 10L.
[0016] In the example shown in FIG. 1, the switching elements constituting each of the arms 10H, 10L are n-channel MOSFETs. MOSFET is an abbreviation for Metal Oxide Semiconductor Field Effect Transistor. The number of switching elements constituting each of the arms 10H, 10L is not particularly limited. There may be one or more. In FIG. 1, each of the arms 10H, 10L has one MOSFET.
[0017] The upper and lower arm circuits 10 have gate terminals G1 and G2 as external connection terminals. The gate terminal G1 is electrically connected to the gate electrode of the MOSFET on the upper arm 10H side. The gate terminal G2 is electrically connected to the gate electrode of the MOSFET on the lower arm 10L side. The gate terminals G1 and G2 are terminals for inputting gate drive signals to the corresponding gate electrodes. The upper and lower arm circuits 10 have drain terminals D1 and D2 and source terminals S1 and S2. The drain terminal D1 is electrically connected to the drain electrode of the MOSFET on the upper arm 10H side. The source terminal S1 is electrically connected to the source electrode of the MOSFET on the upper arm 10H side. The drain terminal D2 is electrically connected to the drain electrode of the MOSFET on the lower arm 10L side. The source terminal S2 is electrically connected to the source electrode of the MOSFET on the lower arm 10L side.
[0018] The source electrode of the MOSFET on the upper arm 10H side and the drain electrode of the MOSFET on the lower arm 10L side are electrically connected to each other. The source terminal S1 and / or the drain terminal D2 are electrically connected to a winding of a corresponding phase of the rotating electric machine via an output line. The drain terminal D1 is electrically connected to a P line 11, which is a power supply line on the high potential side. The source terminal S2 on the lower arm 10L side is electrically connected to an N line 12, which is a power supply line on the low potential side.
[0019] The switching elements are not limited to MOSFETs. For example, IGBTs may be used. IGBT is an abbreviation for Insulated Gate Bipolar Transistor. A freewheeling diode may be connected in inverse parallel to each of the switching elements. Although the electronic device is applied to an inverter, the present invention is not limited to this. For example, the electronic device may be applied to an H-bridge circuit or a converter that is a DC-DC conversion circuit. The external connection terminals may include an output terminal instead of the source terminal S1 and the drain terminal D2. The output terminal is electrically connected to the source electrode of the MOSFET on the upper arm 10H side and the drain electrode of the MOSFET on the lower arm 10L side.
[0020] <General structure of electronic device> Next, a schematic structure of the electronic device will be described with reference to Figs. 2 to 6. Fig. 2 is a plan view of the electronic device seen from one side of the sealing body. In Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 3 is a plan view seen from the back side of the sealing body. Fig. 4 is a side view seen from the Y1 direction shown in Fig. 2. Fig. 5 is a cross-sectional view taken along the line VV shown in Fig. 2. Fig. 6 is a cross-sectional view taken along the line VI-VI shown in Fig. 2.
[0021] In the following, the thickness direction of the lead frame is defined as the Z direction. The direction perpendicular to the Z direction is defined as the X direction. The direction perpendicular to both the Z direction and the X direction is defined as the Y direction. Unless otherwise specified, the shape viewed from the Z direction, in other words the shape along the XY plane defined by the X and Y directions, is defined as the planar shape. The planar view from the Z direction is sometimes simply referred to as the planar view.
[0022] The electronic device 20 shown in Fig. 2 etc. provides the upper and lower arm circuits 10 for one phase shown in Fig. 1, i.e., an inverter. The electronic device 20 has a 2-in-1 package structure. The electronic device 20 includes an encapsulant 30, a lead frame 40, a semiconductor element 50, and a clip 60. The electronic device 20 including the semiconductor element 50 may be referred to as a semiconductor package, a semiconductor device, or the like.
[0023] The encapsulant 30 encapsulates a portion of the other elements constituting the electronic device 20. The remaining portions of the other elements are exposed to the outside of the encapsulant 30. The encapsulant 30 is a molded body made of, for example, a resin. An example of the resin is an epoxy resin. The encapsulant 30 is molded by, for example, a transfer molding method. The encapsulant 30 may be called a molded resin, a resin molded body, or the like.
[0024] The sealing body 30 has one surface 30a and a back surface 30b opposite to the one surface 30a in the Z direction as a surface (outer surface) forming an outer shell. The one surface 30a and the back surface 30b may be, for example, substantially flat. The sealing body 30 has side surfaces continuing to the one surface 30a and the back surface 30b. The sealing body 30 has a substantially rectangular shape in a plan view in the Z direction. The sealing body 30 has side surfaces 30c, 30d, 30e, and 30f. The side surface 30c is the surface opposite to the side surface 30d in the Y direction. The side surface 30e is the surface opposite to the side surface 30f in the X direction. The sealing body 30 has an outflow passage 31. The outflow passage 31 will be described in detail later.
[0025] The lead frame 40 is a plate material made of a metal having good electrical conductivity, such as Cu or a Cu alloy. The lead frame 40 provides a wiring function. The lead frame 40 illustrated in this embodiment has a drain island 41, a source island 42, a fusing portion 43, an extension portion 44, a suspension lead 45, a signal terminal 46, and a reinforcing terminal 47. The lead frame 40 corresponds to a wiring member. Hereinafter, the drain island 41 and the source island 42 may be simply referred to as islands 41, 42.
[0026] The islands 41 and 42 are portions of the lead frame 40 on which other elements constituting the electronic device 20 are mounted. The plate thickness direction of the islands 41 and 42 is the Z direction. The drain island 41 is connected to the semiconductor element 50 via a bonding material such as solder (not shown). The source island 42 is connected to a clip 60 via a bonding material.
[0027] The drain island 41 includes drain islands 411 and 412. In this embodiment, the drain island 411 constitutes the upper arm 10H, and the drain island 412 constitutes the lower arm 10L. The drain islands 411 and 412 have a substantially rectangular shape in plan view and extend along the Y direction. The drain island 411 and the drain island 412 are arranged to face each other in the X direction with a slight deviation in the Y direction. The source island 42 includes source islands 421 and 422. In this embodiment, the source island 421 constitutes the upper arm 10H, and the source island 422 constitutes the lower arm 10L. The source islands 421 and 422 have a substantially rectangular shape in plan view and extend along the X direction.
[0028] The source island 421 and the drain island 411 are aligned in the Y direction with the source island 421 facing the side surface 30c. The source island 422 and the drain island 412 are aligned in the Y direction with the source island 422 facing the side surface 30d. In this manner, the arrangement of the source island 42 relative to the drain island 41 is reversed on the upper arm 10H side and the lower arm 10L side. The islands 41, 42 on the upper arm 10H side and the islands 41, 42 on the lower arm 10L side are dyad-symmetric.
[0029] The fusing portion 43 melts when electricity is applied thereto, and cuts off the electrical path. The fusing portion 43 generates heat and melts when electricity is applied thereto. The fusing portion 43 melts when an overcurrent flows, and protects normal circuit elements, for example normal semiconductor elements 50. The fusing portion 43 may be referred to as a fuse, a disconnecting portion, or the like. The fusing portion 43 is provided between the source island 421 and the drain island 412. The fusing portion 43 is provided integrally and continuously with the source island 421 and the drain island 412. The fusing portion 43 is provided in a portion that connects (joins) the source island 421 and the drain island 412.
[0030] Fusing portion 43 extends in the X direction. One end of fusing portion 43 is connected to source island 421, and the other end is connected to drain island 412. The length in the Y direction of fusing portion 43, i.e., the width, is approximately equal to the width of source island 421 in the example shown in Fig. 2. The integrated structure including source island 421, fusing portion 43, and drain island 412 has an approximately L-shape in plan view.
[0031] The extension portion 44 is provided integrally and continuously with the fusion portion 43. At least a portion of the extension portion 44 extends from the end portion on the fusion portion 43 side in a direction different from the X direction in which the fusion portion 43 extends. In this embodiment, the extension portion 44 extends in the Y direction over its entire length. One of the ends of the extension portion 44 is continuous with the fusion portion 43. The other end portion of the extension portion 44, which is a terminal end 44a, is approximately flush with the side surface 30c and is exposed to the outside of the sealing body 30. The terminal end 44a (end face) is a cut surface.
[0032] The length in the X direction of the extension portion 44, i.e., the width, is shorter than the length (width) in the Y direction of the fusion portion 43. The cross-sectional area of the extension portion 44 is smaller than the cross-sectional area of the fusion portion 43. The extension portion 44 melts when it receives heat generated by the fusion portion 43 when electricity is passed through it. The extension portion 44 is provided as one of the suspension leads 45. In the example shown in FIG. 2, one extension portion 44 is connected to the fusion portion 43.
[0033] The hanging leads 45 hold other elements of the lead frame 40 during the manufacturing process. The hanging leads 45 are cut when the electronic devices 20 are separated into individual pieces. The ends of the hanging leads 45 are also cut surfaces. In this embodiment, the hanging leads 45 are provided for each of the islands 41 and 42. The hanging leads 45 hold the islands 41 and 42. One of the ends of the hanging leads 45 is connected to the corresponding island 41 or 42, and the other end is exposed outside the sealing body 30, approximately flush with the side surface of the sealing body 30.
[0034] The suspending leads 45 extend in the X direction or the Y direction. The suspending leads 45 extending in the X direction are exposed to the outside from the side surface 30c or the side surface 30d. The suspending leads 45 extending in the X direction are provided on each of the islands 41 and 42. The suspending leads 45 extending in the Y direction are exposed to the outside from the side surface 30e or the side surface 30f. The suspending leads 45 extending in the Y direction are also provided on each of the islands 41 and 42.
[0035] The signal terminal 46 is electrically connected to the pad of the semiconductor element 50. The signal terminal 46 includes at least a terminal electrically connected to the gate pad, that is, a gate terminal. In this embodiment, the signal terminal 46 on the upper arm 10H side is exposed outside the sealing body 30, approximately flush with the side surface 30d. The signal terminal 46 on the upper arm 10H side is connected to the drain island 411 in the X direction and is disposed between two suspension leads 45 exposed on the side surface 30d. The signal terminal 46 on the lower arm 10L side is exposed outside the sealing body 30, approximately flush with the side surface 30c. The signal terminal 46 on the lower arm 10L side is connected to the drain island 412 in the X direction and is disposed between two suspension leads 45 exposed on the side surface 30c.
[0036] The reinforcing terminals 47 are provided at the four corners of the sealing body 30 in a plan view. The reinforcing terminals 47 reinforce the joint structure in which the electronic device 20 is solder-joined to a substrate (not shown). Each of the reinforcing terminals 47 is exposed on two adjacent side surfaces of the sealing body 30.
[0037] The lead frame 40 has a locally different thickness. The lead frame 40 has a thick portion 40a and a thin portion 40b that is thinner than the thick portion 40a. The entire upper surface of the lead frame 40 is located at approximately the same height in the Z direction. The entire upper surface is covered by the sealing body 30. Of the lower surface of the lead frame 40, the thick portion 40a is exposed from the back surface 30b of the sealing body 30. The lower surface of the thick portion 40a is approximately flush with the back surface 30b and is exposed from the sealing body 30. Of the lower surface of the lead frame 40, the thin portion 40b is covered by the sealing body 30. The lower surface of the thin portion 40b is not exposed from the back surface 30b. Of the lead frame 40, the portion shown by the solid line in FIG. 3, i.e., the exposed portion, is the thick portion 40a, and the portion shown by the dashed line is the thin portion 40b.
[0038] The upper surface of the lead frame 40 is the surface on the side of one surface 30a of the sealing body 30, and the lower surface is the surface on the side of the back surface 30b. The lead frame 40 is formed by etching. By half-etching the lower surface side of the lead frame 40, the thin portion 40b has a thickness approximately half that of the thick portion 40a, and is covered by the sealing body 30.
[0039] Each of the islands 41 and 42 has a thick portion 40a and a thin portion 40b. The thick portion 40a occupies a large part of the islands 41 and 42. The thin portion 40b is provided on the outer periphery of the islands 41 and 42 so as to surround the thick portion 40a. The two-dot chain line shown in FIG. 2 indicates the boundary between the thick portion 40a and the thin portion 40b in the islands 41 and 42. The thick portion 40a is located inside the two-dot chain line, and the thin portion 40b is located outside the two-dot chain line. As shown in FIG. 3, the portion of the drain island 411 exposed on the back surface 30b provides the drain terminal D1. The portion of the drain island 412 exposed on the back surface 30b provides the drain terminal D2. The portion of the source island 421 exposed on the back surface 30b provides the source terminal S1. The portion of the source island 422 exposed on the back surface 30b provides the source terminal S2.
[0040] The islands 41 and 42 may have only the thick portion 40a. By having the thin portion 40b in addition to the thick portion 40a as in the present embodiment, the islands 41 and 42 can be prevented from falling off the sealing body 30 due to an anchor effect.
[0041] The fusing portion 43, the extension portion 44, and the hanging lead 45 only have the thin portion 40b. The lower surfaces of the fusing portion 43, the extension portion 44, and the hanging lead 45 are covered by the sealing body 30. The fusing portion 43, the extension portion 44, and the hanging lead 45 are not exposed to the back surface 30b.
[0042] The signal terminal 46 and the reinforcing terminal 47 only have the thick portion 40a. The signal terminal 46 and the reinforcing terminal 47 are exposed on the back surface 30b. Of the signal terminal 46, the portion electrically connected to the gate pad of the semiconductor element 50 that is exposed on the back surface 30b provides a gate terminal. Specifically, the exposed portion of the signal terminal 46 on the upper arm 10H side provides a gate terminal G1. The exposed portion of the signal terminal 46 on the lower arm 10L side provides a gate terminal G2.
[0043] The semiconductor element 50 is formed by forming a switching element on a semiconductor substrate made of silicon (Si), a wide band gap semiconductor having a wider band gap than silicon, or the like. As the wide band gap semiconductor, for example, silicon carbide (SiC), gallium nitride (GaN), gallium oxide (Ga2O3), diamond, or the like may be used. The semiconductor element 50 may be called a semiconductor chip, a power element, or the like.
[0044] As an example, in this embodiment, a vertical element is formed on a semiconductor substrate. The vertical element is configured to pass a main current in the thickness direction of the semiconductor element 50 (semiconductor substrate). The semiconductor element 50 is disposed on the corresponding drain island 41 so that the thickness direction of the semiconductor element 50 itself is substantially parallel to the thickness direction of the islands 41 and 42, i.e., the Z direction. The semiconductor element 50 has main electrodes on both sides in the thickness direction. The semiconductor element 50 of this embodiment is formed by forming an n-channel MOSFET as a vertical element on the semiconductor substrate. As shown in FIG. 2 and FIG. 5, the semiconductor element 50 has a drain electrode 51 on one side as a main electrode, and a source electrode 52 on the back side, which is the opposite side to the one side. The semiconductor element 50 is disposed on the thick portion 40a of the corresponding drain island 41 so that the drain electrode 51 faces the drain island 41.
[0045] When the MOSFET is turned on, a current (main current) flows between the main electrodes, that is, between the drain electrode 51 and the source electrode 52. The drain electrode 51 is a main electrode on the high potential side, and the source electrode 52 is a main electrode on the low potential side. The drain electrode 51 is formed on almost the entire area of one surface. The source electrode 52 is formed on a part of the back surface.
[0046] As shown in Fig. 2, the semiconductor element 50 has a pad 53, which is an electrode for signals, on the back surface. The pad 53 is formed at a position on the back surface different from the source electrode 52. The pad 53 includes at least a gate pad. For convenience, only one pad 53 is shown in Fig. 2. The pad 53 (gate pad) is electrically connected to the corresponding signal terminal 46 via a bonding wire 70.
[0047] The semiconductor element 50 includes a semiconductor element 501 arranged on the drain island 411 and a semiconductor element 502 arranged on the drain island 412. In this embodiment, the semiconductor element 501 constitutes the upper arm 10H, and the semiconductor element 502 constitutes the lower arm 10L. A drain electrode 51 of the semiconductor element 501 is connected to the drain island 411 via a bonding material such as solder. A drain electrode 51 of the semiconductor element 502 is connected to the drain island 412 via a bonding material.
[0048] The semiconductor elements 501 and 502 have a common configuration, for example. The semiconductor elements 501 and 502 are arranged side by side in the X direction. The semiconductor elements 501 and 502 are arranged slightly shifted in the Y direction. The semiconductor element 502 is arranged rotated about 180 degrees around the Z axis with respect to the semiconductor element 501. The semiconductor element 50 has a substantially rectangular shape in plan view. In each semiconductor element 50, the source electrode 52 and the pad 53 are arranged side by side in the Y direction. In the semiconductor element 501, the source electrode 52 is arranged on the side of the side 30c of the sealing body 30, and the pad 53 is arranged on the side of the side 30d. In the semiconductor element 502, the source electrode 52 is arranged on the side of the side 30d, and the pad 53 is arranged on the side of the side 30c.
[0049] The clip 60 may be referred to as a bridging member, a relay member, a metal bridge, or the like. The clip 60 is a plate material made of a metal having good electrical conductivity, such as Cu or a Cu alloy. The clip 60 may be formed by punching a metal plate of a predetermined thickness and pressing it. The clip 60 may be formed using a profile material having a thickness that varies in parts. The clip 60 may be formed by etching.
[0050] The clip 60 electrically connects the source electrode 52 of the semiconductor element 50 and the source island 42. The clip 60 has connection portions 61 and 62. The connection portion 61 is a portion that connects to the source electrode 52. The connection portion 61 is connected to the source electrode 52 via a bonding material such as solder. The connection portion 62 is a portion that connects to the source island 42. The connection portion 62 is connected to the source island 422 via a bonding material.
[0051] The clip 60 includes a clip 601 connected to the semiconductor element 501 and a clip 602 connected to the semiconductor element 502. In this embodiment, the clip 601 constitutes the upper arm 10H, and the clip 602 constitutes the lower arm 10L. The clip 601 extends in the Y direction in a plan view. The clip 601 electrically connects the source electrode 52 of the semiconductor element 501 and the source island 421. The clip 602 extends in the Y direction in a plan view. The clip 602 electrically connects the source electrode 52 of the semiconductor element 502 and the source island 422.
[0052] As described above, the sealing body 30 seals the other elements constituting the electronic device 20, that is, the lead frame 40, the semiconductor element 50, and the clip 60, which are the remaining elements excluding the sealing body 30. The other elements are not exposed from the one surface 30a of the sealing body 30. The other elements are exposed from the back surface 30b and the side surfaces 30c, 30d, 30e, and 30f. Of the lead frame 40, the islands 41 and 42 soldered to the substrate, the signal terminals 46, and the reinforcing terminals 47 are exposed approximately flush with the back surface 30b. The hanging leads 45 and the reinforcing terminals 47 are exposed approximately flush with the corresponding side surfaces 30c, 30d, 30e, and 30f. The signal terminals 46 are exposed approximately flush with the corresponding side surfaces 30c and 30d. The extension portion 44 is exposed approximately flush with the side surface 30c. In this way, the electronic device 20 does not have terminals extending outward from the sealing body 30. The electronic device 20 has a QFN type non-lead package structure. QFN is an abbreviation for Quad Flat Non-lead package.
[0053] <Outflow passage> Next, the outflow passage 31 will be described with reference to Figures 2 to 4, 7, and 8. Figure 7 is a cross-sectional view taken along line VII-VII shown in Figure 2. Figure 8 is an enlarged view of region VIII shown by a two-dot chain line in Figure 4.
[0054] The outflow passage 31 is a passage for allowing the fusion portion 43 and the extension portion 44, which are melted by energization, to escape to the outside of the sealing body 30. The outflow passage 31 is configured to include at least a portion covering the outer peripheral surface of the extension portion 44. The outflow passage 31 extends along the extension portion 44 and opens to the outer surface of the sealing body 30. In this embodiment, the extension portion 44 extends in the Y direction from the fusion portion 43. The end 44a of the extension portion 44 is exposed to the side surface 30c in a substantially flush manner. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 44 extending in the Y direction. The outflow passage 31 opens to the side surface 30c. The sealing body 30 has an opening 31a of the outflow passage 31 on the side surface 30c.
[0055] The outflow passage 31 is a hollow portion having a cross-sectional area substantially equal to that of the extension portion 44, extending from the fusion portion 43 in the Y direction and opening to the side surface 30c. The hollow portion is a hole provided in the plug 30, extending from the side surface 30c in the Y direction. Before the extension portion 44 melts, at least a part of the outflow passage 31 is blocked by the extension portion 44. In this embodiment, the extension portion 44 extends from the fusion portion 43 to the side surface 30c, and substantially the entire outflow passage 31 is blocked by the extension portion 44. The plug 30 has an outflow passage 31 derived from the extension portion 44, which is formed by covering the extension portion 44. The outflow passage 31 is provided substantially parallel to the lower surface (exposed surface) of the islands 41, 42 exposed from the plug 30. The outflow passage 31 is provided substantially parallel to the back surface 30b.
[0056] <Manufacturing method> Next, an example of a manufacturing method of the electronic device 20 will be described with reference to Figs. 9 to 16. Fig. 9 is a flow chart showing the manufacturing method. Fig. 10 is a plan view showing the lead frame before cutting. Fig. 11 is a side view seen from the Y2 direction shown in Fig. 10. Fig. 12 is a plan view showing a state in which a semiconductor element is arranged. Fig. 13 is a plan view showing a state in which a clip is arranged. Fig. 14 is a plan view showing a state in which a sealing body is formed. Fig. 15 is a side view seen from the Y3 direction shown in Fig. 14. Fig. 16 is a diagram showing dicing. An example in which solder is used as a bonding material will be described below.
[0057] As shown in FIG. 9, first, a lead frame before singulation is prepared (step S10). As shown in FIG. 10, the lead frame 40P before singulation has elements for a plurality of products, that is, a plurality of lead frames 40. The plurality of lead frames 40 are arranged in a matrix. As an example, the lead frame 40P has a total of 50 lead frames 40 in 5 rows and 10 columns. Each of the lead frames 40 is connected to an outer periphery frame or a lattice frame. The outer periphery frame is provided on the outer periphery of the lead frame 40P in a plan view so as to surround the plurality of lead frames 40. The lattice frame is provided so as to separate the plurality of lead frames 40. The lattice frame is provided between adjacent lead frames 40.
[0058] 11, a back tape 71 is attached to almost the entire lower surface of the prepared lead frame 40P. The back tape 71 supports each element of the lead frame 40. This makes it possible to suppress deformation and displacement of each element. For example, it is possible to suppress the occurrence of resin burrs during molding.
[0059] Also, solder (not shown) is applied to the mounting portion of each lead frame 40. For example, the solder is applied by printing. In the case of printing, it is preferable that the surface of the lead frame 40P is flat. For this reason, in this embodiment, the lead frame 40P is used which is formed by etching a flat metal plate. By etching, the lead frame 40 having the thick portion 40a and the thin portion 40b can be easily formed. By etching, unnecessary portions of the flat metal plate are melted and removed. The flat metal plate melts from above and below in the Z direction. At the penetration portion of the lead frame 40P, two approximately spherical cross sections are connected in the Z direction.
[0060] Next, the semiconductor element 50 is arranged (step S20). The semiconductor element 50 is prepared in parallel with the lead frame 40P. The semiconductor element 50 is obtained by dicing a wafer that has been subjected to a plurality of manufacturing processes into individual pieces. Then, the prepared semiconductor element 50 is arranged at a predetermined position of the lead frame 40, specifically, the above-mentioned drain island 41, as shown in FIG. 12. Semiconductor elements 501 and 502 are arranged on all the lead frames 40. In addition, solder is applied onto the source electrodes 52 of the semiconductor elements 50 arranged on the lead frame 40. For example, the solder is applied by printing.
[0061] Next, the clip 60 is arranged (step S30). The clip 60 is prepared in parallel with the lead frame 40 and the semiconductor element 50. Then, the prepared clip 60 is arranged so that one end overlaps the solder on the semiconductor element 50 and the other end overlaps a predetermined position on the lead frame 40, specifically, the solder on the source island 42, as shown in FIG. 14. Clips 601 and 602 are arranged for all the lead frames 40.
[0062] Next, solder reflow is performed (step S40). As a result, the semiconductor element 50 and the lead frame 40 are solder-joined. The clip 60 and the lead frame 40 are solder-joined. The clip 60 and the semiconductor element 50 are solder-joined. Although not shown, after reflow, the pads 53 of the semiconductor element 50 and the signal terminals 46 are connected via the bonding wires 70 described above.
[0063] Next, the sealing body before singulation is molded (step S50). As shown in Figs. 14 and 15, the sealing body before singulation 30P integrally seals elements for a plurality of products. With the upper and lower dies clamped together, resin is injected into the cavity to mold the sealing body 30P. The upper die is configured to integrally cover the lead frame 40P except for the outer periphery. The wall surface that constitutes the cavity of the lower die is approximately flat. The sealing body 30P is molded with the back tape 71 arranged so as to contact the cavity wall surface of the lower die.
[0064] After molding, the back tape 71 is peeled off. This exposes the underside of the thick portion 40a of the lead frame 40. Then, a plating film is applied to the exposed portion of the lead frame 40. For example, the plating film is formed by electroplating. This can improve the connection reliability between the electronic device 20 and the board using solder.
[0065] Next, dicing is performed (step S60). As shown in Fig. 16, the sealing body 30P is placed upside down in the Z direction compared to when it was molded, and cut from the lower surface side of the lead frame 40 by a diamond cutter 72. The diamond cutter 72 may be called a dicing cutter, a dicing saw, or the like. By dicing, the lead frame 40P is divided into individual lead frames 40 for each product. The sealing body 30P is divided into individual sealing bodies 30 for each product. Through the above steps, the electronic device 20 is obtained.
[0066] FIG. 17 shows a cross-sectional shape of the lead frame 40. FIG. 17 shows a cross-section of the thin-walled portion 40b including the fusion portion 43 and the extension portion 44. FIG. 17 is an enlarged view of the fusion portion 43 and the extension portion 44 shown in FIG. 7. As described above, in this embodiment, the lead frame 40 is divided into individual pieces by dicing. Thus, the end 44a of the extension portion 44 is a cut surface by dicing. The end 44a is substantially flush with the side surface 30c, which is a cut surface by dicing in the sealing body 30. In contrast, the side surface 43a of the fusion portion 43 is an etched surface. The etched surface has a shape like a part of a sphere. The side surface of the fusion portion 43 to which the extension portion 44 is connected also has a shape similar to that of the side surface 43a. The side surface of the extension portion 44, excluding the end 44a, also has a shape similar to that of the side surface 43a. In this way, the surface condition of the end 44a of the extension portion 44 is significantly different from that of the side surface of the fusion portion 43. In addition, in all figures except FIG. 17, the shape of the lead frame 40 is illustrated in a simplified form.
[0067] <Fusing operation> Next, the melting operation will be described with reference to Figs. 18 to 21. Fig. 18 is an enlarged plan view of the periphery of the melting portion. Fig. 18 shows current concentration. Fig. 19 is a plan view showing the state where the molten portion flows out. Fig. 19 corresponds to Fig. 8. In Fig. 19, the molten portion is hatched for clarity. Fig. 20 is a view showing the state after the molten portion flows out. Fig. 20 corresponds to Fig. 2. Fig. 21 is a cross-sectional view showing the state after the molten portion flows out. Fig. 21 corresponds to Fig. 7.
[0068] As described above, fusing portion 43 provides the function of breaking the electrical path. Fusing portion 43 generates heat when electricity is applied. When the temperature of fusing portion 43 exceeds the melting point of the material that constitutes fusing portion 43, fusing portion 43 melts. In order to provide the breaking function, fusing portion 43 has at least one of a structure that has a high resistance value and easily generates heat, a structure that has low heat dissipation properties and easily traps heat, and a structure that easily concentrates current. In this embodiment, fusing portion 43 has the three structures described above.
[0069] Specifically, the thickness of the fusion portion 43 is approximately half the thickness of the thick portion 40a of the islands 41 and 42 due to half etching. The fusion portion 43 extends along the longitudinal direction of the source island 421 and has a narrow width. Therefore, the resistance value of the fusion portion 43 is high. The lower surface side of the fusion portion 43 is covered by the sealing body 30, and the fusion portion 43 has a lower heat dissipation property than the islands 41 and 42. Therefore, heat generated by the current flow is trapped. In a plan view, the clip 601 extends in the Y direction, and the source island 421 and the fusion portion 43 extend in the X direction. When one of the semiconductor elements 501 and 502 has a short circuit failure and the other is turned on, the ground fault current that flows is bent at the joint between the clip 601 and the source island 421 as shown by the solid arrow in FIG. 18, and the current is concentrated at the fusion portion 43.
[0070] For example, when the ground fault current is about several hundred amperes, the temperature of the fusing portion 43 exceeds 1000°C in several tens of milliseconds. The temperature of the fusing portion 43 exceeds the melting point of Cu, 1085°C, and the fusing portion 43 melts. The extension portion 44 is provided integrally with the fusing portion 43 and is heated by heat conduction from the fusing portion 43. The temperature of the extension portion 44 rises together with the fusing portion 43. The internal pressure increases due to the temperature rise, and the fusing portion 43 and the extension portion 44 try to go out of the sealing body 30 through the outflow passage 31. When the temperature further rises and the fusing portion 43 and the extension portion 44 melt, the melting portion 48 is pushed out of the sealing body 30 from the opening 31a of the outflow passage 31 as shown in FIG. 19. The melting portion 48 is a portion of the lead frame 40 that has melted due to an overcurrent, and includes at least a part of the fusing portion 43 and the extension portion 44. As the molten portion 48 flows out of the sealing body 30, the flow of the electric current stops.
[0071] When the molten portion 48 flows out of the sealing body 30, as shown in Figures 20 and 21, the outflow passage 31 becomes a cavity in which the extension portion 44 is not disposed over its entire length. In the sealing body 30, a cavity portion 32 originating from the molten portion 43 is formed as a result of the molten portion 43 flowing out. The cavity portion 32 is connected to the outflow passage 31. The cavity portion 32 is provided between the source island 421 and the drain island 412, and electrically separates the source island 421 from the drain island 412. The source island 421 and the drain island 412 are in an open state.
[0072] <Summary of the First Embodiment> In the case where the electronic device 20 provides the upper and lower arm circuits 10 for one phase as exemplified in this embodiment, if one of the arms 10H, 10L is short-circuited and the other is turned on, an overcurrent due to a ground fault will flow. Although control is performed so that the normal arm does not fail, if it still fails, it will cause a complete power supply ground fault, affecting other products and nearby circuits. The electronic device 20 of this embodiment includes a wiring member (lead frame 40) and an encapsulant 30 that encapsulates the wiring member. The wiring member has a fusing portion 43 that extends in a predetermined direction (X direction). When an overcurrent flows, the fusing portion 43 melts and cuts off the electrical path. This makes it possible to prevent the normal arm from failing.
[0073] The wiring member has an extension portion 44. The extension portion 44 is provided integrally and continuously with the fusion portion 43, and at least a portion of the extension portion 44 extends from the fusion portion 43 in a direction (Y direction) different from the predetermined direction. The extension portion 44 is configured to melt by heat generated in the fusion portion 43 when electricity is passed through the extension portion 44. The sealing body 30 is configured to include at least a portion covering the outer peripheral surface of the extension portion 44, and has an outflow passage 31 extending along the extension portion 44.
[0074] In this way, the sealing body 30 has an outflow passage 31 originating from the extension portion 44, which is formed by covering the extension portion 44. The outflow passage 31 is blocked by the extension portion 44 before the extension portion 44 melts, and when the extension portion 44 melts, it functions as a passage for discharging the melted fusion portion 43 and the extension portion 44 to the outside of the sealing body 30. Therefore, even if the mold for forming the sealing body 30 is not brought into contact with the fusion portion 43 to expose the fusion portion, the fusion portion 43 that melts when electricity is passed through it can be discharged to the outside of the sealing body 30. The fusion portion 43 can exhibit the desired interruption characteristics without strictly controlling the dimensional accuracy of the wiring member including the fusion portion 43 and the mold, and the relative positional accuracy of the wiring member including the fusion portion 43 and the mold.
[0075] As exemplified in this embodiment, the end 44a of the extension portion 44 and the fusion portion 43 may have different surface conditions. The end 44a may be a cut surface. The end 44a may be substantially flush with the outer surface of the sealing body 30. The outflow passage 31 may open to the side surface 30c of the sealing body 30. In this embodiment, the electronic device 20 is singulated by dicing. The wiring member is formed by etching. By dicing, the end 44a is exposed from the sealing body 30 substantially flush with the side surface 30c, and the outflow passage 31 opens to the side surface 30c. The end 44a is a cut surface by dicing, and the fusion portion 43 is an etched surface. The extension portion 44 and the outflow passage 31 are formed by utilizing a process of molding the sealing body and a process of singulating. This can simplify the manufacturing process.
[0076] As exemplified in this embodiment, the cross-sectional area of the extension portion 44 may be smaller than the cross-sectional area of the fusion portion 43. The extension portion 44 is likely to melt when it receives heat generated in the fusion portion 43 by energization. Therefore, when the fusion portion 43 melts, the molten fusion portion 43 (melted portion 48) can be quickly released to the outside of the sealing body 30.
[0077] As exemplified in this embodiment, the wiring member may be a lead frame 40. The lead frame 40 allows easy formation of the fusion portion 43 and the extension portion 44. For example, the thickness can be locally varied by etching to provide a cutoff function. For example, a part of the suspension lead 45 can be used as the extension portion 44.
[0078] As exemplified in this embodiment, the electronic device 20 may include a semiconductor element 50. The lead frame 40 may have a drain island 41 (mounting portion) that is thicker than the fusion portion 43 and the extension portion 44 and to which the semiconductor element 50 is connected. The lower surface of the drain island 41 may be exposed from the sealing body 30, and the lower surfaces of the fusion portion 43 and the extension portion 44 may be covered by the sealing body 30. In this embodiment, the thickness of the thin portion 40b including the fusion portion 43 and the extension portion 44 is approximately half the thickness of the thick portion 40a that occupies the main part of the drain island 41 by half etching. The heat generated by the semiconductor element 50 can be effectively dissipated while the fusion portion 43 and the extension portion 44 are provided with the desired functions.
[0079] The outflow passage 31 may be provided substantially parallel to the lower surface of the drain island 41 exposed from the sealing body 30. The outflow passage 31 may extend substantially parallel to the lower surface of the drain island 41. This allows the outflow passage 31 to be provided substantially parallel to the substrate on which the electronic device 20 is mounted. Since the position of the outflow passage 31 is determined based on the substrate, it is easy to ensure an arrangement that makes it easy to discharge the molten portion 48.
[0080] Second embodiment This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used in the present embodiment. In the previous embodiment, all the islands mainly have thick portions. Instead of this, at least a part of the source islands may have only thin portions.
[0081] FIG. 22 is a plan view of the electronic device according to this embodiment seen from the back side. FIG. 22 corresponds to FIG. 3. FIG. 23 is a cross-sectional view of the electronic device. FIG. 23 corresponds to FIG. 6. As shown in FIG. 22 and FIG. 23, among the islands 41 and 42, the source island 421 has only the thin portion 40b. The drain island 41 (411, 412) and the source island 422 mainly have the thick portion 40a as in the preceding embodiment. The thickness of the source island 421 is approximately half the thickness of the thick portion 40a by half etching. The lower surface of the source island 421 is covered by the sealing body 30. The source island 421 is not exposed from the back surface 30b. The electronic device 20 does not have a source terminal S1. The fusing portion 43 electrically connects the source island 421 and the drain island 412 before being cut off. The other configurations are the same as those of the electronic device 20 described in the preceding embodiment.
[0082] <Summary of the second embodiment> The electronic device 20 of this embodiment also achieves the same effects as the configuration described in the preceding embodiment. For example, the bottom surface of the drain island 41 is exposed from the sealing body 30, and the bottom surfaces of the fusing portion 43 and the extension portion 44 are covered by the sealing body 30. Therefore, even if the source island 421 is made of the thin portion 40b, the desired functions of the fusing portion 43 and the extension portion 44 can be provided, and the heat generated by the semiconductor element 50 can be effectively dissipated.
[0083] Although the example in which the source island 421 is the thin portion 40b has been shown, the present invention is not limited to this. For example, the source island 422 may be the thin portion 40b. Both the source island 421 and the source island 422 may be the thin portion 40b.
[0084] Third embodiment This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, the electronic device is configured to provide upper and lower arm circuits for one phase, i.e., an inverter. Instead of this, a semiconductor relay may be provided.
[0085] <Circuit configuration of electronic device> FIG. 24 shows an equivalent circuit of the electronic device according to this embodiment. The electronic device 20 according to this embodiment provides a source common type semiconductor relay 13 as shown in FIG. 24. The semiconductor relay 13 includes two MOSFETs connected in series, similar to the upper and lower arm circuit 10. The semiconductor relay 13 has gate terminals G1 and G2, drain terminals D1 and D2, and source terminals S1 and S2 as external connection terminals. The gate terminal G1 is electrically connected to one gate electrode of the MOSFETs. The gate terminal G2 is electrically connected to another gate electrode of the MOSFETs. In the following, the MOSFET connected to the gate terminal G1 may be referred to as MOSFET1, and the MOSFET connected to the gate terminal G2 may be referred to as MOSFET2.
[0086] The drain terminal D1 is electrically connected to the drain electrode of MOSFET 1. The source terminal S1 is electrically connected to the source electrode of MOSFET 1. The drain terminal D2 is electrically connected to the drain electrode of MOSFET 2. The source terminal S2 is electrically connected to the source electrode of MOSFET 2. The source electrode of MOSFET 1 and the source electrode of MOSFET 2 are electrically connected to each other.
[0087] <General structure of electronic device> Fig. 25 is a plan view of the electronic device as viewed from one side. Fig. 25 corresponds to Fig. 2. In Fig. 25, as in Fig. 2, the sealing body is shown in a see-through manner in order to show the portion covered by the sealing body. Fig. 26 is a plan view of the electronic device as viewed from the back side. Fig. 27 is a side view as viewed from the Y4 direction shown in Fig. 25. Fig. 28 is a cross-sectional view taken along the line XXVIII-XXVIII shown in Fig. 25.
[0088] The electronic device 20 of this embodiment has the same configuration as that shown in the preceding embodiment (first embodiment). The electronic device 20 includes a sealing body 30, a lead frame 40, a semiconductor element 50, and a clip 60. The lead frame 40 has islands 41 and 42, a melting portion 43, an extension portion 44, a hanging lead 45, a signal terminal 46, and a reinforcing terminal 47. The lead frame 40 has a thick portion 40a and a thin portion 40b. Most of the islands 41 and 42, the signal terminal 46, and the reinforcing terminal 47 have the thick portion 40a. The melting portion 43, the extension portion 44, and the hanging lead 45 have only the thin portion 40b. The upper surface of the lead frame 40 is covered by the sealing body 30 over the entire area. The lower surface of the thick portion 40a is exposed from the back surface 30b, and the lower surface of the thin portion 40b is covered by the sealing body 30. The thick portion 40a is exposed and is substantially flush with the rear surface 30b.
[0089] The drain islands 411, 412 are generally rectangular in plan view with the Y direction as the longitudinal direction. The drain islands 411, 412 are aligned in the X direction so as to face each other over the entire longitudinal length. The source islands 421, 422 are generally rectangular in plan view with the X direction as the longitudinal direction. The source islands 421, 422 are aligned in the X direction so as to face each other over the entire lateral length.
[0090] Fusing portion 43 is provided between source islands 421, 422. Fusing portion 43 is provided integrally and continuously with source islands 421, 422. Fusing portion 43 is provided in a portion connecting source island 421 and source island 422. The length in the Y direction of fusing portion 43, i.e., the width, is approximately equal to the widths of source islands 421, 422. The integrated structure including source island 421, fusing portion 43, and source island 422 has an approximately I-shape in plan view.
[0091] The extension portion 44 is integrally formed continuous with the fusion portion 43, and extends in the Y direction for its entire length. An end 44a of the extension portion 44 is approximately flush with the side surface 30c and exposed from the sealing body 30. The end 44a is a cut surface produced by dicing. The width of the extension portion 44 is narrower than the width of the fusion portion 43. The cross-sectional area of the extension portion 44 is smaller than the cross-sectional area of the fusion portion 43. The sealing body 30 has an outflow passage 31 that opens to the side surface 30c.
[0092] The suspension leads 45 are connected to the islands 41 and 42. The ends of the suspension leads 45 are exposed from the sealing body 30, approximately flush with the corresponding side surfaces 30c, 30d, 30e, and 30f. The signal terminal 46 corresponding to the above-mentioned MOSFET 1 is exposed outside the sealing body 30, approximately flush with the side surface 30d. The signal terminal 46 corresponding to the MOSFET 1 is connected to the drain island 411 in the X direction and is disposed between the two suspension leads 45 exposed on the side surface 30d. The signal terminal 46 corresponding to the MOSFET 2 is also exposed outside the sealing body 30, approximately flush with the side surface 30d. The signal terminal 46 corresponding to the MOSFET 2 is connected to the drain island 412 in the X direction and is disposed between the two suspension leads 45 exposed on the side surface 30d. The reinforcing terminals 47 are provided at the four corners of the sealing body 30 in a plan view.
[0093] The semiconductor element 50 includes a semiconductor element 501 mounted on the drain island 411 and a semiconductor element 502 mounted on the drain island 412. The semiconductor element 501 provides a MOSFET 1, and the semiconductor element 502 provides a MOSFET 2. The semiconductor elements 501 and 502 are aligned in the X direction. The semiconductor elements 501 and 502 are arranged in the same direction. The semiconductor elements 501 and 502 are arranged such that the source electrode 52 is on the side surface 30c and the pad 53 is on the side surface 30d.
[0094] The clip 60 includes a clip 601 connected to the semiconductor element 501 and a clip 602 connected to the semiconductor element 502. The clips 601 and 602 extend in the Y direction in a plan view. The clip 601 electrically connects the source electrode 52 of the semiconductor element 501 to the source island 421. The clip 602 electrically connects the source electrode 52 of the semiconductor element 502 to the source island 422. The other configurations are similar to those shown in the preceding embodiment (first embodiment).
[0095] <Summary of the third embodiment> The electronic device 20 of this embodiment also has the same effect as the configuration described in the preceding embodiment (first embodiment). For example, the lead frame 40, which is a wiring member, has a fusing portion 43. When an overcurrent flows, the fusing portion 43 melts and cuts off the electrical path. This makes it possible to prevent a normal MOSFET from failing. In addition, the sealing body 30 has an outflow passage 31 originating from the extension portion 44, which is formed by covering the extension portion 44. The outflow passage 31 is blocked by the extension portion 44 before the extension portion 44 melts, and when the extension portion 44 melts, it functions as a passage for discharging the melted fusing portion 43 and the extension portion 44 to the outside of the sealing body 30. The fusing portion 43, which melts when electricity is applied, can be discharged to the outside of the sealing body 30 even if the mold for forming the sealing body 30 is not in contact with the fusing portion 43. The fusing portion 43 can exhibit a desired interruption characteristic.
[0096] In this embodiment, as in the previous embodiment, the electronic device 20 is divided into individual pieces by dicing. The lead frame 40 is formed by etching. The end 44a is a cut surface by dicing, and the fusion portion 43 is an etched surface. The extension portion 44 and the outflow passage 31 are formed by utilizing a process of molding the sealing body and a process of dividing into individual pieces. This simplifies the manufacturing process.
[0097] In this embodiment, similarly to the preceding embodiment, the lower surface of the drain island 41 is exposed from the sealing body 30, and the lower surfaces of the fusion portion 43 and the extension portion 44 are covered by the sealing body 30. By half etching, the thickness of the thin portion 40b including the fusion portion 43 and the extension portion 44 is approximately half the thickness of the thick portion 40a that occupies the main part of the drain island 41. Therefore, the heat generated by the semiconductor element 50 can be effectively dissipated while the fusion portion 43 and the extension portion 44 have the desired functions.
[0098] The semiconductor relay 13 is not limited to a common source type in which the source electrodes are connected in common. It may be a common drain type in which the drain electrodes are connected in common. As shown in the second embodiment, at least one of the source islands 421 and 422 may be the thin portion 40b.
[0099] (Fourth embodiment) This embodiment is a modification of the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, the lead frame is a wiring member having a fusing portion. Instead of this, the clip may be a wiring member having a fusing portion.
[0100] Fig. 29 is a plan view of the electronic device as seen from one side. Fig. 29 corresponds to Fig. 25. In Fig. 29, like Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 30 is a side view as seen from the Y5 direction shown in Fig. 29. Fig. 31 is a cross-sectional view taken along the line XXXI-XXXI shown in Fig. 29.
[0101] The electronic device 20 of this embodiment provides a common-source type semiconductor relay 13, similar to the configuration shown in the preceding embodiment (third embodiment). The electronic device 20 of this embodiment differs from the third embodiment in that a fusion portion 63 and an extension portion 64 are provided on a clip 60. The lead frame 40 does not have a fusion portion 43 or an extension portion 44. The source islands 421, 422 are aligned in the X direction with a predetermined gap therebetween.
[0102] The fusion part 63 is provided between the clips 601 and 602. The fusion part 63 is provided integrally with the clips 601 and 602. The fusion part 63 is provided at a portion connecting the clips 601 and 602. The fusion part 63 extends in the X direction. One end of the fusion part 63 is connected to the clip 601, and the other end is connected to the clip 602. The length of the fusion part 63 in the Y direction, that is, the width, is shorter than the length (width) of the clips 601 and 602 in the X direction. The integrated structure including the clip 601, the fusion part 63, and the clip 602 is substantially C-shaped (substantially U-shaped) in plan view. In the clip 60, the clip 601 is sometimes referred to as a first clip part, and the clip 602 is sometimes referred to as a second clip part.
[0103] The extension portion 64 is provided integrally with the fusing portion 63. At least a part of the extension portion 64 extends from the end of the fusing portion 63 in a direction different from the X direction in which the fusing portion 63 extends. In this embodiment, the extension portion 64 extends in the Y direction over its entire length. One of the ends of the extension portion 64 is connected to the fusing portion 63. The other end of the extension portion 64, that is, the terminal end 64a, is exposed outside the sealing body 30, approximately flush with the side surface 30c. The terminal end 64a is a cut surface by dicing. The side surface of the fusing portion 63 is an etched surface. As shown in FIG. 30, the terminal end 64a is located at a position farther from the back surface 30b than the lead frame 40, that is, upward. The fusing portion 63 and the extension portion 64 are located at a position farther from the substrate than the lead frame 40 in the Z direction.
[0104] The length in the X direction of the extension portion 64, i.e., the width, is shorter than the length in the Y direction (width) of the fusion portion 63. The cross-sectional area of the extension portion 64 is smaller than the cross-sectional area of the fusion portion 63. The extension portion 64 melts by receiving heat generated by the fusion portion 63 when electricity is passed through it. In the example shown in FIG. 29, one extension portion 64 is continuous with the fusion portion 63.
[0105] The clip 60 is formed by, for example, etching. The clip 60 has a locally different thickness. The clip 60 has a thick portion 60a and a thin portion 60b that is thinner than the thick portion 60a. By half etching, the thin portion 60b has a thickness that is approximately half that of the thick portion 60a. In the clip 60, the portion surrounded by the dashed line shown in FIG. 29 is the thick portion 60a, and the portion excluding the thick portion 60a is the thin portion 60b. The thick portion 60a is provided at the joint portion with the source electrode 52 and the joint portion with the source islands 421 and 422. The fusing portion 63 and the extension portion 64 have only the thin portion 60b.
[0106] The sealing body 30 has an outflow passage 31. The outflow passage 31 is configured to include at least a portion covering the outer peripheral surface of the extension portion 64. The outflow passage 31 extends along the extension portion 64 and opens to the outer surface of the sealing body 30. In this embodiment, the outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 64 extending in the Y direction. The sealing body 30 has an opening 31a of the outflow passage 31 on the side surface 30c.
[0107] The outflow passage 31 is a hollow portion having a cross-sectional area substantially equal to that of the extension portion 64, extending in the Y direction from the fusion portion 63 and opening to the side surface 30c. Before the extension portion 64 melts, at least a portion of the outflow passage 31 is blocked by the extension portion 64. In this embodiment, substantially the entire outflow passage 31 is blocked by the extension portion 64. As described above, the plug 30 has the outflow passage 31 derived from the extension portion 64, which is formed by covering the extension portion 64. The outflow passage 31 is provided substantially parallel to the lower surfaces (exposed surfaces) of the islands 41, 42 exposed from the plug 30.
[0108] The fusing portion 63 provides a function of cutting off an electrical path. When the temperature of the fusing portion 63 exceeds the melting point of the material that constitutes the fusing portion 63, the fusing portion 63 melts. Like the fusing portion 43, the fusing portion 63 has at least one of a structure that has a high resistance value and is prone to heat generation, a structure that has low heat dissipation properties and is prone to heat buildup, and a structure that is prone to current concentration. The fusing portion 63 of this embodiment has the three structures described above.
[0109] Specifically, the thickness of the fusion portion 63 is approximately half the thickness of the joint portion (thick portion 60a) due to half etching. The width of the fusion portion 63 is narrower than the width of the clips 601 and 602. Therefore, the resistance value of the fusion portion 63 is high. The lower surface of the fusion portion 63 is covered by the sealing body 30, and heat generated by energization is trapped therein. In a plan view, the clip 601 extends in the Y direction, and the fusion portion 63 extends in the X direction. When one of the semiconductor elements 501 and 502 shorts out and the other is turned on, the overcurrent that flows is bent between the clip 601 and the fusion portion 63. Therefore, the current is concentrated in the fusion portion 63.
[0110] Although not shown, when the melting portion 63 and the extension portion 64 melt, the melting portion is pushed out of the sealing body 30 from the opening 31a of the outflow passage 31. The melting portion is a portion of the clip 60 that melts due to an overcurrent, and includes at least a part of the melting portion 63 and the extension portion 64. When the melting portion flows out of the sealing body 30, the current flow stops. When the melting portion flows out of the sealing body 30, the outflow passage 31 becomes a cavity in which the extension portion 64 is not arranged over its entire length. In the sealing body 30, a cavity portion originating from the melting portion 63 is formed by the melting portion 63 flowing out. The cavity portion electrically separates the clips 601 and 602. The other configurations are the same as those described in the preceding embodiment. For example, the electronic device 20 can be obtained by the manufacturing method described in the preceding embodiment (first embodiment).
[0111] <Summary of the Fourth Embodiment> The electronic device 20 of this embodiment also has the same effect as the configuration described in the preceding embodiment. For example, the clip 60, which is a wiring member, has a melting portion 63. When an overcurrent flows, the melting portion 63 melts and cuts off the electrical path. This makes it possible to prevent a normal semiconductor element 50 from failing. In addition, the sealing body 30 has an outflow passage 31 originating from the extension portion 64, which is formed by covering the extension portion 64. The extension portion 64 blocks the outflow passage 31 before melting, and releases the blocked state when melted. The melting portion 63, which melts when electricity is applied, can be released to the outside of the sealing body 30 even if the mold for forming the sealing body 30 is not in contact with the melting portion 63. The melting portion 63 can exhibit the desired blocking characteristics.
[0112] In this embodiment, the surface state of the end 64a of the extension portion 64 is different from that of the fusion portion 63. The end 64a is a cut surface. The end 64a is substantially flush with the outer surface of the sealing body 30. The outflow passage 31 opens to the outer surface of the sealing body 30. More specifically, the electronic device 20 is divided into individual pieces by dicing. The clip 60 is formed by etching. By dicing, the end 64a is exposed from the sealing body 30 substantially flush with the side surface 30c, and the outflow passage 31 opens to the side surface 30c. The end 64a is a cut surface by dicing, and the fusion portion 63 is an etched surface. The extension portion 64 and the outflow passage 31 are formed by utilizing a process of molding the sealing body and a process of dividing the sealing body. This simplifies the manufacturing process.
[0113] In this embodiment, the clip 60 is provided with a fusion portion 63 and an extension portion 64. The fusion portion 63 and the extension portion 64 are disposed at a position higher than the lead frame 40, based on the lower surfaces of the islands 41, 42 exposed from the rear surface 30b of the sealing body 30. When the electronic device 20 is mounted on the board, the fusion portion 63 and the extension portion 64 are away from the conductor pattern of the board. This can reduce the heat dissipation of the fusion portion 63 and the extension portion 64. In other words, the temperature of the fusion portion 63 and the extension portion 64 can be easily increased.
[0114] The clip 60 may be mounted as a single component, or may be mounted as a clip frame similar to the lead frame 40. The clip frame has clips 60 for a plurality of products. The clip frame may be collectively sealed with a sealing body 30P and separated into individual pieces by dicing. Although an example in which the clip 60 is formed by etching has been shown, this is not limiting. For example, the clip 60 may be formed by pressing and rolling.
[0115] In the electronic device 20 providing the upper and lower arm circuits 10, the clip 60 may be provided with the fusion portion 63 and the extension portion 64. For example, in the configuration shown in FIG. 2, instead of the fusion portion 43 and the extension portion 44, the clip 601 may be provided with the fusion portion 63 and the extension portion 64.
[0116] Fifth embodiment This embodiment is a modification based on the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the electronic device has a 2-in-1 package structure. Instead of this, the electronic device may have a 1-in-1 package structure.
[0117] Fig. 32 is a plan view of the electronic device according to this embodiment as seen from one side. Fig. 32 corresponds to Fig. 29. In Fig. 32, as in Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 33 is a side view as seen from the X1 direction shown in Fig. 32. Fig. 34 is a cross-sectional view taken along the line XXXIV-XXXIV shown in Fig. 32.
[0118] The electronic device 20 of this embodiment has a 1-in-1 package structure. For example, the electronic device 20 may provide one of the arms, i.e., the upper arm 10H or the lower arm 10L, in the upper and lower arm circuit 10 for one phase. The electronic device 20 may provide one of the MOSFETs forming a series circuit in the semiconductor relay 13 of a source common type.
[0119] The electronic device 20 includes one semiconductor element 50 and one clip 60. The lead frame 40 includes one island 41 and one island 42. The drain island 41 and the source island 42 are aligned in the Y direction. The semiconductor element 50 is mounted on the drain island 41. The clip 60 extends in the Y direction in a plan view. One end of the clip 60 is connected to the source electrode 52, and the other end is connected to the source island 42.
[0120] The clip 60 has a fusion portion 63 and an extension portion 64. The fusion portion 63 is provided between the connection portions 61 and 62. The fusion portion 63 is provided in a portion connecting the connection portion 61 and the connection portion 62. The fusion portion 63 extends in the Y direction. The extension portion 64 extends in the X direction from the side surface of the fusion portion 63. The end 64a of the extension portion 64 is exposed outside the sealing body 30, approximately flush with the side surface 30f. The clip 60 is formed by etching. The end 64a is a cut surface by dicing, and the side surface of the fusion portion 63 is an etched surface. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 64 extending in the X direction. The sealing body 30 has an opening 31a of the outflow passage 31 on the side surface 30f. The other configurations are the same as those described in the preceding embodiment.
[0121] <Summary of the Fifth Embodiment> The electronic device 20 of this embodiment also achieves the same effects as the configuration described in the preceding embodiment. For example, by dicing, the end 64a is exposed from the sealing body 30 in a substantially flush state with the side surface 30c, and the outflow passage 31 opens to the side surface 30c. The end 64a is a cut surface caused by dicing, and the fused portion 63 is an etched surface. The extension portion 64 and the outflow passage 31 are formed by utilizing a process of molding the sealing body and a process of singulating. This can simplify the manufacturing process.
[0122] Furthermore, since the clip 60 is provided with the fusion portion 63 and the extension portion 64, it is possible to reduce the heat dissipation properties of the fusion portion 63 and the extension portion 64. In other words, it is possible to make it easier for the temperature of the fusion portion 63 and the extension portion 64 to increase.
[0123] Sixth embodiment This embodiment is a modified example based on the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the outflow passage opens on the side surface of the sealing body. Instead of this, the outflow passage may be configured to open on the back surface of the sealing body.
[0124] Fig. 35 is a plan view of the electronic device according to this embodiment as viewed from one side. Fig. 35 corresponds to Fig. 25. In Fig. 35, as in Fig. 2, the sealing body is shown in a see-through manner in order to show the portion covered by the sealing body. Fig. 36 is a plan view of the electronic device as viewed from the back side. Fig. 37 is a cross-sectional view taken along the line XXXVII-XXXVII shown in Fig. 35. Fig. 37 shows the electronic device mounted on a substrate.
[0125] The electronic device 20 of this embodiment provides a common-source type semiconductor relay 13, similar to the electronic device 20 shown in FIG. 25. The lead frame 40 has a fusing portion 43 and an extension portion 44. The fusing portion 43 has a width narrower than the source islands 421 and 422. The extension portion 44 extends in the Z direction from the lower surface of the fusing portion 43. The end 44a of the extension portion 44 is exposed from the sealing body 30, approximately flush with the back surface 30b. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 44 extending in the Z direction. The outflow passage 31 opens on the back surface 30b. The sealing body 30 has an opening 31a of the outflow passage 31 on the back surface 30b.
[0126] As an example, the extension portion 44 has a substantially circular planar shape. The planar shape of the extension portion 44 is not particularly limited. For example, it may be a substantially rectangular shape. As shown in FIG. 37, the electronic device 20 is mounted on a substrate 80, for example. The substrate 80 is a so-called printed circuit board. The substrate 80 has an insulating base material 81 and a conductor pattern 82. The conductor pattern 82 is disposed on at least the surface of the insulating base material 81 facing the electronic device 20. The conductor pattern 82 may be disposed in multiple layers on the insulating base material 81. The islands 41 and 42 are connected to the corresponding conductor patterns 82 via a bonding material 83 such as solder. The signal terminals 46 and the reinforcing terminals 47 are also connected to the corresponding conductor patterns 82 via the bonding material 83.
[0127] When an overcurrent flows and melts the fusing portion 43 and the extension portion 44, the melting portion flows out from the opening 31a of the back surface 30b. Therefore, it is preferable to connect the electronic device 20 to the substrate 80 so that the opening 31a is not blocked by the bonding material 83. This allows the melting portion to escape to the outside of the sealing body 30. In addition, it is possible to prevent the fusing portion 43 from being thermally connected to the conductor pattern 82 via the bonding material 83 and the extension portion 44. In other words, it is possible to prevent the heat generated by the fusing portion 43 from being transferred to the conductor pattern 82 side, and to prevent the melting of the fusing portion 43 and therefore the extension portion 44 from being hindered.
[0128] The electronic device 20 described above can be formed by the manufacturing method shown in the preceding embodiment. When preparing the lead frame 40P, the part where the extension part 44 continues directly below the fusion part 43 is etched so as to become the thick part 40a. Then, the molding of the sealing body 30P is performed with the back tape 71 attached to the back surface of the lead frame 40P. After molding, the back tape 71 is peeled off. As a result, the end 44a is exposed on the back surface 30b in a substantially flush manner, and a structure in which the outflow passage 31 opens on the back surface 30b can be obtained. In addition, since a plating film is applied to the exposed part of the lead frame 40 after the back tape 71 is peeled off, the surface state of the end 44a is different from the surface (etched surface) of the fusion part 43. The other configurations are the same as those described in the preceding embodiment.
[0129] <Summary of the Sixth Embodiment> The electronic device 20 of this embodiment also has the same effect as the configuration described in the preceding embodiment. For example, the sealing body 30 has an outflow passage 31 originating from the extension portion 44, which is formed by covering the extension portion 44. The outflow passage 31 extends along the extension portion 44 and opens to the back surface 30b of the sealing body 30. The outflow passage 31 is closed by the extension portion 44 before the extension portion 44 melts, and functions as a passage for discharging the melted fusing portion 43 and the extension portion 44 to the outside of the sealing body 30 when the extension portion 44 melts. Therefore, the fusing portion 43, which melts when electricity is applied, can be discharged to the outside of the sealing body 30 even if the mold for forming the sealing body 30 is not brought into contact with the fusing portion 43. The fusing portion 43 can exhibit the desired interruption characteristics.
[0130] Although an example in which the electronic device 20 provides the semiconductor relay 13 has been described, the present invention is not limited to this. For example, in the electronic device 20 that provides the upper and lower arm circuits 10, the lead frame 40 may be provided with an extension portion 44 that extends in the Z direction from the fusion portion 43 and is exposed substantially flush with the back surface 30b.
[0131] Seventh embodiment This embodiment is a modified example based on the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the outflow passage is open to the side or back surface of the sealing body. Instead of this, the outflow passage may be open to one surface of the sealing body.
[0132] Fig. 38 is a plan view of the electronic device according to this embodiment as seen from one side. Fig. 38 corresponds to Fig. 32. In Fig. 38, the sealing body is shown in a see-through manner in order to show the portion covered by the sealing body, as in Fig. 2. Fig. 39 is a cross-sectional view taken along the line XXXIX-XXXIX shown in Fig. 38.
[0133] The electronic device 20 of this embodiment has a 1-in-1 package structure similar to the electronic device 20 shown in FIG. 32. The clip 60 has a fusion portion 63 and an extension portion 64. The fusion portion 63 has a width narrower than the connection portions 61 and 62. The extension portion 64 extends in the Z direction from the upper surface of the fusion portion 63. The end 64a of the extension portion 64 is exposed from the sealing body 30, approximately flush with the one surface 30a. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 64 extending in the Z direction. The sealing body 30 has an opening 31a of the outflow passage 31 on the one surface 30a. The other configurations are the same as those described in the preceding embodiment.
[0134] <Summary of the Seventh Embodiment> The electronic device 20 of this embodiment also has the same effect as the configuration described in the preceding embodiment. For example, the sealing body 30 has an outflow passage 31 originating from the extension portion 64, which is formed by covering the extension portion 64. The outflow passage 31 extends along the extension portion 64 and opens to one surface 30a of the sealing body 30. The outflow passage 31 is closed by the extension portion 64 before the extension portion 64 melts, and functions as a passage for discharging the melted fusion portion 63 and the extension portion 64 to the outside of the sealing body 30 when the extension portion 64 melts. Therefore, the fusion portion 63, which melts when electricity is applied, can be discharged to the outside of the sealing body 30 even if the mold for forming the sealing body 30 is not brought into contact with the fusion portion 63. The fusion portion 63 can exhibit the desired interruption characteristics.
[0135] Although the electronic device 20 has a 1-in-1 package structure, the electronic device 20 is not limited to this. For example, in a 2-in-1 package structure, the clip 60 may have an extension portion 64 that extends in the Z direction from the fusion portion 63 and is exposed substantially flush with the surface 30a.
[0136] Eighth embodiment This embodiment is a modified example based on the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the electronic device provides one system. Instead of this, the electronic device may provide multiple systems.
[0137] Fig. 40 is a plan view of the electronic device according to this embodiment as viewed from one side. Fig. 40 corresponds to Fig. 2. In Fig. 40, like Fig. 2, the sealing body is shown in a see-through manner in order to show the portion covered by the sealing body. Fig. 41 is a plan view of the electronic device as viewed from the back side. Fig. 41 corresponds to Fig. 3.
[0138] The electronic device 20 of this embodiment has a 4-in-1 package structure. The electronic device 20 provides two systems of upper and lower arm circuits 10. The electronic device 20 includes four semiconductor elements 50. The semiconductor element 501 constitutes the upper arm 10H of the first system, and the semiconductor element 502 constitutes the lower arm 10L of the first system. The semiconductor element 503 constitutes the upper arm 10H of the second system, and the semiconductor element 504 constitutes the lower arm 10L of the second system. The semiconductor elements 501 and 503 on the upper arm 10H side are aligned in the X direction, and the semiconductor elements 502 and 504 on the lower arm 10L side are aligned in the X direction. The semiconductor elements 501 and 502 of the first system are aligned in the Y direction. The semiconductor elements 503 and 504 of the second system are aligned in the Y direction.
[0139] The lead frame 40 has islands 41 and 42. Most of the islands 41 and 42 are thick portions 40a, as in the previous embodiment. The drain island 41 includes four drain islands 411, 412, 413, and 414. A semiconductor element 501 is mounted on the drain island 411, and a semiconductor element 502 is mounted on the drain island 412. A semiconductor element 503 is mounted on the drain island 413, and a semiconductor element 504 is mounted on the drain island 414. The drain islands 411 and 413 on the upper arm 10H side are aligned in the X direction. The drain islands 411 and 413, which are at the same potential, are provided continuously and integrally. The drain islands 412 and 414 on the lower arm 10L side are aligned in the X direction.
[0140] The source island 42 includes four source islands 421, 422, 423, and 424. The first system of islands 411, 412, 421, and 422 are arranged in the Y direction in the order of the drain island 411, the source island 421, the drain island 412, and the source island 422. The second system of islands 413, 414, 423, and 424 are arranged in the Y direction in the order of the drain island 413, the source island 423, the drain island 414, and the source island 424.
[0141] The clip 60 includes four clips 601, 602, 603, and 604 that are provided individually. Each clip 60 extends in the Y direction in a plan view. The clip 601 electrically connects the source electrode 52 of the semiconductor element 501 to the source island 421. The clip 602 electrically connects the source electrode 52 of the semiconductor element 502 to the source island 422. The clip 603 electrically connects the source electrode 52 of the semiconductor element 503 to the source island 423. The clip 604 electrically connects the source electrode 52 of the semiconductor element 504 to the source island 424.
[0142] The lead frame 40 has a fusion portion 43 and an extension portion 44. The fusion portion 43 and the extension portion 44 are the thin portion 40b, as in the previous embodiment. The fusion portion 43 and the extension portion 44 are provided for each system. The fusion portion 43 of the first system is provided between the source island 421 and the drain island 412. The fusion portion 43 extends in the Y direction. The extension portion 44 extends in the X direction from the side surface of the fusion portion 43. The end 44a of the extension portion 44 is exposed to the side surface 30e in a substantially flush state. The fusion portion 43 of the second system is provided between the source island 423 and the drain island 414. The fusion portion 43 extends in the Y direction. The extension portion 44 extends in the X direction from the side surface of the fusion portion 43. The end 44a of the extension portion 44 is exposed to the side surface 30f in a substantially flush state. Each of the ends 44a is a cut surface produced by dicing.
[0143] The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 64 extending in the X direction. The sealing body 30 has a first system of outflow passages 31 that opens to the side surface 30e and a second system of outflow passages 31 that opens to the side surface 30f. The other configurations are similar to those described in the preceding embodiment.
[0144] <Summary of the Eighth Embodiment> The electronic device 20 of this embodiment also has the same effect as the configuration described in the preceding embodiment. In this embodiment, when an abnormality occurs in the upper and lower arm circuits 10 of the first system and an overcurrent flows, the fusing portion 43 and the extension portion 44 of the first system melt. The melting portion flows out of the sealing body 30 from the side surface 30e through the outflow passage 31 of the first system. When an abnormality occurs in the upper and lower arm circuits 10 of the second system and an overcurrent flows, the fusing portion 43 and the extension portion 44 of the second system melt. The melting portion flows out of the sealing body 30 from the side surface 30f through the outflow passage 31 of the second system. In this way, the electrical path of the system in which an abnormality occurs can be cut off. For example, when applied to a vehicle, only the faulty system is cut off and limp home is possible with the normal system.
[0145] Furthermore, the extensions 44 and the outflow passages 31 for the multiple systems are formed by utilizing the process of molding the sealing body and the process of dividing the sealing body, thereby simplifying the manufacturing process.
[0146] The electronic device 20 providing multiple systems is not limited to a 4-in-1 package structure. For example, it may be a 6-in-1 package structure providing three systems. Although an example has been shown in which all of the outflow passages 31 of the multiple systems open to the side surface of the sealing body 30, this is not limiting. At least one of the outflow passages 31 may open to the back surface 30b or the one surface 30a. For example, one of the outflow passages 31 may open to the side surface and the other may open to the back surface 30b.
[0147] Ninth embodiment This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, the fusing portion and the extension portion and the portion of the wiring member other than the fusing portion and the extension portion are integrally provided using the same material. Alternatively, the fusing portion and the extension portion may be formed using a material different from that of the portion of the wiring member other than the fusing portion and the extension portion.
[0148] Fig. 42 is a plan view of an electronic device according to this embodiment as viewed from one side. Fig. 42 corresponds to Fig. 2. In Fig. 42, as in Fig. 2, the sealing body is shown in a see-through manner in order to show the portion covered by the sealing body. Fig. 43 is a side view as viewed from the Y6 direction shown in Fig. 42. Fig. 44 is a cross-sectional view taken along the line XLIV-XLIV shown in Fig. 42.
[0149] The electronic device 20 of this embodiment has almost the same structure as the electronic device 20 shown in FIG. 2. The difference is that the fusing portion 43 and the extension portion 44 are integrally provided by joining with the other parts of the lead frame 40 except for the fusing portion 43 and the extension portion 44. The fusing portion 43 and the extension portion 44 are provided continuously and integrally. The fusing portion 43 and the extension portion 44 are provided as one member using a common material. The fusing portion 43 and the extension portion 44 are formed using a metal material having a lower melting point than the other parts of the lead frame 40. The fusing portion 43 and the extension portion 44 are formed using, for example, an Al (aluminum)-based material. The other parts of the lead frame 40 are formed using a Cu-based material.
[0150] The extension portion 44 extends in the Y direction from the side surface of the fusing portion 43, similar to the configuration shown in FIG. 2. The end 44a of the extension portion 44 is exposed from the sealing body 30, approximately flush with the side surface 30c. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 44 extending in the Y direction. The sealing body 30 has an opening 31a of the outflow passage 31 on the side surface 30c. The fusing portion 43 and the extension portion 44 are disposed at a position farther away from the lower surfaces of the islands 41, 42 exposed from the back surface 30b of the sealing body 30 than other parts of the lead frame 40. The other configurations are similar to those described in the preceding embodiment.
[0151] <Summary of the ninth embodiment> The electronic device 20 of this embodiment also has the same effects as the configuration described in the preceding embodiment. Furthermore, in this embodiment, the fusing portion 43 and the extension portion 44 are formed using a material with a lower melting point than the portion of the lead frame 40 excluding the fusing portion 43 and the extension portion 44. This makes it easier to increase the temperature of the fusing portion 63 and the extension portion 64. In other words, when an overcurrent flows, the fusing portion 63 and the extension portion 64 can be melted quickly.
[0152] In this embodiment, the fusing portion 43 and the extension portion 44 are disposed at a higher position than other portions of the lead frame 40, based on the lower surfaces of the islands 41, 42 exposed from the rear surface 30b of the sealing body 30. When the electronic device 20 is mounted on the board, the fusing portion 43 and the extension portion 44 are away from the conductor pattern of the board. This can reduce the heat dissipation of the fusing portion 43 and the extension portion 44. In other words, the temperature of the fusing portion 43 and the extension portion 44 can be easily increased.
[0153] In the lead frame 40, the fusing portion 43 and the extension portion 44 are formed using a material with a low melting point, but the present invention is not limited to this. In the clip 60, the fusing portion 63 and the extension portion 64 may be formed using a material with a lower melting point than the portion of the clip 60 excluding the fusing portion 63 and the extension portion 64. Also, instead of a material with a low melting point, a material with a high electrical resistivity may be used. For example, the fusing portion 43 and the extension portion 44 may be formed using a material with a higher electrical resistivity than the portion of the lead frame 40 excluding the fusing portion 43 and the extension portion 44. The fusing portion 63 and the extension portion 64 may be formed using a material with a higher electrical resistivity than the portion of the clip 60 excluding the fusing portion 63 and the extension portion 64.
[0154] Tenth embodiment This embodiment is a modified example based on the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the end of the extension portion is a cut surface by dancing. Instead of this, the end of the extension portion may be a cut surface by press cutting.
[0155] Fig. 45 is a plan view of the electronic device according to this embodiment as seen from one side. Fig. 45 corresponds to Fig. 2. In Fig. 45, like Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 46 is a plan view as seen from the back side. Fig. 46 corresponds to Fig. 3.
[0156] The electronic device 20 of this embodiment has almost the same structure as the electronic device 20 shown in FIG. 2. The difference is that the electronic device 20 is divided into individual pieces by press cutting. The extension portion 44 extends outward beyond the side surface 30c. The end portion 44a is located outward beyond the side surface. The end portion 44a is a cut surface by press cutting. Like the extension portion 44, the hanging lead 45 also extends outward beyond the corresponding side surfaces 30c, 30c, 30e, and 30f. The end portion of the hanging lead 45 is also a cut surface by press cutting.
[0157] The signal terminal 46 and the reinforcing terminal 47 are also press-cut like the extension portion 44. The signal terminal 46 extends outward beyond the corresponding side surfaces 30c, 30c, 30e, and 30f. The reinforcing terminal 47 extends outward beyond the corresponding side surfaces 30c, 30c, 30e, and 30f.
[0158] The electronic device 20 described above can be formed by utilizing the manufacturing method shown in the preceding embodiment. The difference is in the molding process of the sealing body 30P and the singulation process. The sealing body 30P is molded so as to seal each product. The sealing body 30P has a plurality of sealing bodies 30 separated from each other. In the singulation, press cutting is used instead of dicing. This makes it possible to obtain an electronic device 20 having a structure in which terminals protrude from the side surfaces 30c, 30d, 30e, and 30f of the sealing body 30. The other configurations are the same as those described in the preceding embodiment.
[0159] <Summary of the Tenth Embodiment> The electronic device 20 of this embodiment also achieves the same effects as the configuration described in the preceding embodiment. For example, the end 44a of the extension portion 44 and the fusion portion 43 have different surface conditions. The end 44a is a cut surface. The outflow passage 31 opens to the side surface 30c of the sealing body 30. The extension portion 44 extends to the outside of the sealing body 30 through the opening 31a of the outflow passage 31. The end 44a is a cut surface by press cutting, and the fusion portion 43 is an etched surface. The extension portion 44 and the outflow passage 31 are formed by utilizing a process of molding the sealing body and a process of singulating. This can simplify the manufacturing process.
[0160] The electronic device 20 is not limited to a flat package in which the lead frame 40 is exposed on the rear surface 30b in a substantially flush manner. The shape of the exposed terminals is not particularly limited. A package structure in which gull-wing type terminals protrude, such as a QFP package, may be used. QFP is an abbreviation for Quad Flat Package.
[0161] Eleventh embodiment This embodiment is a modified example based on the preceding embodiment, and the description of the preceding embodiment can be used. In the preceding embodiment, the extension portion is protruded from the side surface by press cutting. Instead of this, the end of the extension portion may be located midway in the outflow passage by pulling out the extension portion after press cutting.
[0162] Fig. 47 is a plan view of an electronic device according to this embodiment as viewed from one side. Fig. 47 corresponds to Fig. 45. In Fig. 47, the sealing body is shown in a see-through manner in order to show the portion covered by the sealing body, as in Fig. 2. Fig. 48 is a cross-sectional view taken along line XLVIII-XLVIII shown in Fig. 47.
[0163] The electronic device 20 of this embodiment has almost the same structure as the electronic device 20 shown in Fig. 45. The difference is that by performing pulling after press cutting, the end 44a of the extension portion 44 is located halfway through the outflow passage 31. A part of the extension portion 44 is removed by the pulling, and the remaining part becomes the extension portion 44 of the electronic device 20. The end 44a is a fracture surface caused by the pulling.
[0164] The outflow passage 31 is formed when the sealing body 30P is molded, that is, before it is pulled out. The outflow passage 31 is formed to reflect the extension portion 44 before it is pulled out, and opens to the side surface 30c. The hanging lead 45 is not subjected to the pulling process. The hanging lead 45 extends further outward than the corresponding side surfaces 30c, 30c, 30e, and 30f. The end of the hanging lead 45 is a cut surface formed by press cutting. The other configurations are the same as those described in the preceding embodiment.
[0165] <Summary of the eleventh embodiment> The electronic device 20 of this embodiment also has the same effect as the configuration described in the preceding embodiment. For example, the sealing body 30 has an outflow passage 31 originating from the extension portion 44, which is formed by covering the extension portion 44. The outflow passage 31 extends along the extension portion 44 and opens to the side surface 30c of the sealing body 30. The outflow passage 31 is closed by the extension portion 44 before the extension portion 44 melts, and functions as a passage for discharging the melted fusing portion 43 and the extension portion 44 to the outside of the sealing body 30 when the extension portion 44 melts. Therefore, the fusing portion 43, which melts when electricity is applied, can be discharged to the outside of the sealing body 30 even if the mold for forming the sealing body 30 is not brought into contact with the fusing portion 43. The fusing portion 43 can exhibit the desired interruption characteristics.
[0166] Furthermore, the end 44a of the extension portion 44 is a fracture surface, and is located in the middle of the outflow passage 31. Such an extension portion 44 is formed by drawing after press cutting. The length of the extension portion 44 can be shortened while securing the outflow passage 31. In other words, the extension portion 44 is made to melt easily, and the molten fusion portion 43 can be quickly released to the outside of the sealing body 30. Even if the extension portion 44 breaks at the boundary between the extension portion 44 and the fusion portion 43 during drawing, a fine protrusion shape is created on the fracture surface due to the tensile force. In other words, at least a part of the end 44a is located in the middle of the outflow passage 31.
[0167] Twelfth embodiment This embodiment is a modification based on the previous embodiment, and the description of the previous embodiment can be used. In the previous embodiment, the electronic device includes a semiconductor element. Alternatively, the electronic device may not include a semiconductor element. Alternatively, the electronic device may include only a wiring member and a sealing body.
[0168] Fig. 49 is a plan view of the electronic device according to this embodiment as seen from one side. Fig. 49 corresponds to Fig. 2. In Fig. 49, like Fig. 2, the sealing body is shown in a see-through manner to show the portion covered by the sealing body. Fig. 50 is a plan view of the electronic device as seen from the back side. Fig. 50 corresponds to Fig. 3. Fig. 51 is a side view as seen from the Y7 direction shown in Fig. 49. Fig. 52 is a cross-sectional view taken along the line LII-LII shown in Fig. 49.
[0169] The electronic device 20 of this embodiment provides a fuse. The electronic device 20 includes only a sealing body 30 and a lead frame 40, which is a wiring member. The sealing body 30 has a substantially rectangular shape in plan view, as in the previous embodiment. The sealing body 30 has one surface 30a, a back surface 30b, and side surfaces 30c, 30d, 30e, and 30f. The lead frame 40 is formed, for example, by etching, as in the previous embodiment. The lead frame 40 has a thick portion 40a and a thin portion 40b. The upper surface of the lead frame 40 is entirely covered by the sealing body 30. The lower surface of the thick portion 40a of the lead frame 40 is exposed to the back surface 30b in a substantially flush manner, and the lower surface of the thin portion 40b is covered by the sealing body 30.
[0170] The lead frame 40 has a fusing portion 43, an extension portion 44, and a terminal portion 49. The terminal portion 49 is provided at both ends of the fusing portion 43 in the X direction, which is the extension direction of the fusing portion 43. Most of the terminal portion 49 is the thick portion 40a. The terminal portion 49 is exposed from the back surface 30b and is connected to the substrate. The thin portion 40b is provided at a part of the outer periphery of the terminal portion 49 in a plan view. Note that the two-dot chain line shown in FIG. 49 indicates the boundary between the thick portion 40a and the thin portion 40b. Since the terminal portion 49 has the thick portion 40a and the thin portion 40b, it is possible to suppress the terminal portion 49 from coming off from the sealing body 30 due to the anchor effect. The fusing portion 43 and the extension portion 44 have only the thin portion 40b.
[0171] The extension portion 44 extends in the Y direction from the side surface of the fusion portion 43. The end 44a of the extension portion 44 is exposed from the sealing body 30, approximately flush with the side surface 30c. The end 44a is a cut surface by dicing. The outflow passage 31 is configured to cover the entire outer peripheral surface of the extension portion 44 extending in the Y direction. The sealing body 30 has an opening 31a of the outflow passage 31 on the side surface 30c. The outflow passage 31 extends approximately parallel to the lower surface of the terminal portion 49 exposed from the sealing body 30. The electronic device 20 described above can be obtained by preparing a lead frame 40P, forming the sealing body 30P, and then dicing it.
[0172] <Summary of the twelfth embodiment> The electronic device 20 of this embodiment also has the same effect as the configuration described in the preceding embodiment. For example, when an overcurrent flows, the fusing portion 43 melts, and the electrical path can be cut off. In addition, the lead frame 40 has an extension portion 44. The sealing body 30 has an outflow passage 31 derived from the extension portion 44, which is formed by covering the extension portion 44. The outflow passage 31 is blocked by the extension portion 44 before the extension portion 44 melts, and when the extension portion 44 melts, it functions as a passage for discharging the melted fusing portion 43 and the extension portion 44 to the outside of the sealing body 30. Therefore, even if the mold for forming the sealing body 30 is not brought into contact with the fusing portion 43, the fusing portion 43 that melts due to the passage of electricity can be discharged to the outside of the sealing body 30. The fusing portion 43 can exhibit the desired interruption characteristics.
[0173] In this embodiment, the electronic device 20 is divided into individual pieces by dicing. The lead frame 40 is formed by etching. By dicing, the end 44a is exposed from the sealing body 30 substantially flush with the side surface 30c, and the outflow passage 31 opens on the side surface 30c. The end 44a is a cut surface by dicing, and the fused portion 43 is an etched surface. The extension portion 44 and the outflow passage 31 are formed by utilizing a process of molding the sealing body and a process of dividing into individual pieces. This can simplify the manufacturing process.
[0174] Although an example of the electronic device 20 separated by dicing has been shown, the present invention is not limited to this. The electronic device 20 may be separated by press cutting, or may be separated by pulling out a part of the extension portion 44 after press cutting.
[0175] Thirteenth embodiment This embodiment is a modification based on the preceding embodiment, and the description of the preceding embodiment can be used as the basis for this embodiment. In this embodiment, various forms of the extension portion 44 that the electronic device 20 can take will be described.
[0176] FIG. 53 is a cross-sectional view showing an example of an extended portion in the electronic device according to this embodiment. FIGS. 54 and 55 are cross-sectional views showing other examples of the extended portion. FIGS. 53 to 55 are cross-sectional views along the XY plane. In FIGS. 53 to 55, for convenience, only the fusion portion and the extended portion of the lead frame are shown. The fusion portion and the extended portion are hatched. In each figure, (a) shows dicing cut, (b) shows press cut, and (c) shows extraction after press cut. In each example, the exposed interface of the fusion portion is not formed by a molding die for the sealing body, and therefore manufacturing is easy.
[0177] FIG. 53 shows the form exemplified in the preceding embodiment. The extension portion 44 has a predetermined width, i.e., a predetermined cross-sectional area, and extends in the Y direction. The outflow passage 31 extends in the Y direction and opens to the side surface 30c. In FIG. 53(a), the end 44a is exposed approximately flush with the side surface 30c by dicing cut. In FIG. 53(b), the end 44a is located outside the side surface 30c by press cut. Press sagging and the like occurs on the end 44a, which is the cut surface. In FIG. 53(c), the end 44a becomes a fracture surface by pulling out after press cut. In the preceding embodiment, the fracture surface is shown in a simplified manner. The end 44a is located midway through the outflow passage 31.
[0178] In FIG. 54, the extension portion 44 is provided so that the width becomes wider as it approaches the side surface 30c. This makes the outflow passage 31 tapered. The angle θ is the angle between the side surface 30c and the side surface of the extension portion 44 in a plan view. In other words, it is the angle between the side surface 30c and the wall surface (side wall) of the outflow passage 31 in a plan view. The angle θ is sometimes called a taper angle. In the example shown in FIG. 53, the angle θ is approximately 90 degrees. In the example shown in FIG. 54, the angle θ is greater than 90 degrees. In FIG. 54(a), the extension portion 44 becomes wider as it approaches the side surface 30c, and terminates approximately flush with the side surface 30c. In FIG. 54(b), the extension portion 44 becomes wider as it approaches the side surface 30c, and extends in the Y direction with a constant width outside the side surface 30c. In FIG. 54(c), the extension 44 terminates midway through the tapered outflow passage 31.
[0179] In FIG. 55, a through hole 440 or a recess 441 resulting from the through hole 440 is provided near the end of the extension portion 44. In FIG. 55(a) and FIG. 55(b), a through hole 440 is provided near the end of the extension portion 44 in the configuration shown in FIG. 53. In FIG. 55(c), for example, the extension portion 44 shown in FIG. 55(b) is pulled out and broken at the through hole 440. The end 44a of the extension portion 44 is located midway through the outflow passage 31. The end 44a includes a recess 441 resulting from the through hole 440. The portion of the end 44a excluding the recess 441 is a broken surface.
[0180] <Summary of the thirteenth embodiment> As shown in this embodiment, in a configuration in which the outflow passage 31 extends in one direction (Y direction), the angle θ between the outer surface (side surface 30c) of the plug 30 and the wall surface of the outflow passage 31 is preferably 90 degrees or more. More preferably, the angle θ is greater than 90 degrees. This makes it easier to pull out. That is, it is easier to form the extension portion 44 in which the end 44a is a fracture surface and is located midway through the outflow passage 31. It is also easier to allow the molten fusion portion 43 and the extension portion 44 to escape to the outside of the side surface 30c through the outflow passage 31.
[0181] By providing the through hole 440 shown in FIG. 55 or a non-through cutout not shown, the extension portion 44 can be pulled out at a predetermined position in the outflow passage 31. That is, it is possible to easily form the extension portion 44 in such a form that the end 44a is a fracture surface and the end 44a is located in the outflow passage 31. Also, the amount of the extension portion 44 can be reduced by the amount of the through hole 440 or the cutout. Therefore, it is possible to easily allow the molten fusion portion 43 and the extension portion 44 to escape to the outside of the side surface 30c through the outflow passage 31.
[0182] (Other embodiments) The disclosure in this specification and drawings, etc. is not limited to the exemplified embodiments. The disclosure includes the exemplified embodiments and modifications by those skilled in the art based thereon. For example, the disclosure is not limited to the combination of parts and / or elements shown in the embodiments. The disclosure can be implemented by various combinations. The disclosure can have additional parts that can be added to the embodiments. The disclosure includes the omission of parts and / or elements of the embodiments. The disclosure includes the substitution or combination of parts and / or elements between one embodiment and another embodiment. The disclosed technical scope is not limited to the description of the embodiments. Some disclosed technical scopes are indicated by the description of the claims, and should be interpreted as including all modifications within the meaning and scope equivalent to the description of the claims.
[0183] The disclosure in the specification and drawings is not limited by the claims. The disclosure in the specification and drawings includes the technical ideas described in the claims, and extends to more diverse and broader technical ideas than the technical ideas described in the claims. Therefore, various technical ideas can be extracted from the disclosure in the specification and drawings without being bound by the claims.
[0184] When an element or layer is referred to as being "on," "coupled," "connected," or "bonded," it may be directly coupled, connected, or bonded to another element or layer, and intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly coupled," "directly connected," or "directly bonded" to another element or layer, there are no intervening elements or layers. Other words used to describe relationships between elements should be construed in a similar manner (e.g., "between" vs. "directly between," "adjacent" vs. "directly adjacent," etc.). As used in this specification, the term "and / or" includes any and all combinations of one or more of the associated listed items.
[0185] Spatially relative terms such as "inside," "outside," "back," "bottom," "low," "top," "top," and the like are utilized herein to facilitate the description of the relationship of one element or feature to another element or feature as depicted in the figures. Spatially relative terms may be intended to encompass different orientations of the device during use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "directly below" other elements or features would be oriented "above" the other elements or features. Thus, the term "bottom" can encompass both an orientation of top and bottom. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used in this specification would be interpreted accordingly.
[0186] (Disclosure of technical ideas) This specification discloses multiple technical ideas described in the following multiple dependent claims. Some of the claims may be described in a multiple dependent form, where the subsequent claim alternatively refers to the preceding claim. Furthermore, some of the claims may be described in a multiple dependent form, where the subsequent claim alternatively refers to the preceding claim. The claims described in these multiple dependent forms define multiple technical ideas.
[0187] <Technical philosophy 1> a wiring member (40, 60) having a fusing portion (43, 63) extending in a predetermined direction; a seal (30) that seals the wiring member; Equipped with the wiring member has an extension portion (44, 64) that is integrally provided continuous with the fusing portion, at least a portion of which extends from the fusing portion in a direction different from the predetermined direction, and that melts with heat generated by the fusing portion when electricity is passed through the extension portion; The sealing body is configured to include at least a portion covering the outer peripheral surface of the extension portion, and has an outflow passage (31) that extends along the extension portion, opens onto the outer surface of the sealing body, and allows the fusing portion, which melts when an electric current is passed through it, and the extension portion to escape to the outside of the sealing body.
[0188] <Technical philosophy 2> The electronic device according to Technical Idea 1, wherein the end (44a) of the extension portion and the fusion portion have different surface states.
[0189] <Technical philosophy 3> The electronic device described in Technical Idea 2, wherein the end is a cut surface.
[0190] <Technical philosophy 4> The electronic device described in Technical Concept 3, wherein the termination is flush with the outer surface of the encapsulant.
[0191] <Technical philosophy 5> The electronic device described in Technical Idea 3, wherein the extension portion extends to the outside of the sealing body through the opening of the outflow passage.
[0192] <Technical philosophy 6> The electronic device described in technical idea 2, wherein the end is a broken surface and is located midway along the outflow passage.
[0193] <Technical philosophy 7> The sealing body has one surface (30a), a back surface (30b) that is the surface opposite to the one surface in the thickness direction of the fusing portion, and a side surface (30c) that is continuous with the one surface and the back surface, The electronic device according to any one of Technical Concepts 1 to 6, wherein the outflow passage opens to the side surface.
[0194] <Technical philosophy 8> The electronic device according to any one of Technical Concepts 1 to 7, wherein a cross-sectional area of the extension portion is smaller than a cross-sectional area of the fusing portion.
[0195] <Technical philosophy 9> The outlet passage extends in one direction, The electronic device according to any one of Technical Concepts 1 to 8, wherein an angle between the outer surface of the sealing body and a wall surface of the outflow passage is 90 degrees or more.
[0196] <Technical Thought 10> The electronic device according to any one of Technical Concepts 1 to 9, wherein the wiring member is a lead frame (40).
[0197] <Technical Thought 11> A semiconductor element (50) is provided which is sealed in the sealing body, the lead frame has a mounting portion (41) that is thicker than the fusing portion and the extension portion and to which the semiconductor element is connected; An electronic device described in Technical Idea 10, wherein the underside of the mounting portion, which is the surface opposite the connection surface of the semiconductor element, is exposed from the sealing body, and the undersides of the fusing portion and the extension portion are covered by the sealing body.
[0198] <Technical Thought 12> The electronic device described in Technical Idea 11, wherein the outflow passage is provided parallel to the lower surface of the mounting portion exposed from the sealing body.
[0199] <Technical Thought 13> A semiconductor element (50); a circuit element (40) separate from the wiring member and the semiconductor element, the sealing body seals the semiconductor element and the circuit element together with the wiring member, The electronic device according to any one of Technical Concepts 1 to 9, wherein the wiring member is a clip (60) that electrically connects the semiconductor element and the circuit element.
[0200] <Technical Thought 14> A plurality of the semiconductor elements are provided to provide a plurality of systems; 14. The electronic device according to any one of Technical Concepts 11 to 13, wherein the wiring member has the fusing portion for each of the systems.
[0201] <Technical Thought 15> The electronic device described in any one of Technical Ideas 1 to 14, wherein the fusing portion and the extension portion are formed using a material having a lower melting point than a portion of the wiring member excluding the fusing portion and the extension portion, or a material having a higher electrical resistivity than a portion of the wiring member excluding the fusing portion and the extension portion. [Explanation of symbols]
[0202] 10...upper and lower arm circuits, 10H...upper arm, 10L...lower arm, 11...P line, 12...N line, 13...series circuit, 20...electronic device, 30, 30P...sealing body, 30a...one side, 30b...rear side, 30c, 30d, 30e, 30f...side, 31...outflow passage, 31a...opening, 32...cavity, 40, 40P...lead frame, 40a...thick portion, 40b...thin portion, 41, 411, 412...drain island, 42, 421, 422...source island, 43...melting portion, 43a...side, 44...extension portion, 44a...termination, 440...through hole, 44 1...recess, 45...hanging lead, 46...signal terminal, 47...reinforcing terminal, 48...melting portion, 49...terminal portion, 50,501,502...semiconductor element, 51...drain electrode, 52...source electrode, 53...pad, 60,601,602...clips, 61,62...connection portion, 63...melting portion, 64...extension portion, 64a...termination, 70...bonding wire, 71...back tape, 72...diamond cutter, 80...substrate, 81...insulating base material, 82...conductor pattern, 83...bonding material, D1,D2...drain terminal, G1,G2...gate terminal, S1,S2...source terminal
Claims
1. A wiring member (40, 60) having a fusing portion (43, 63) extending in a predetermined direction; A sealant (30) that seals the wiring member; Equipped with the wiring member has an extension portion (44, 64) that is provided integrally with the fusing portion and is continuous with the fusing portion, at least a part of which extends from the fusing portion in a direction different from the predetermined direction, and that melts with heat generated by the fusing portion when an electric current is passed through the extension portion; The sealing body is configured to include at least a portion covering the outer peripheral surface of the extension portion, and has an outflow passage (31) that extends along the extension portion, opens onto the outer surface of the sealing body, and allows the fusing portion, which melts when an electric current is passed through it, and the extension portion to escape to the outside of the sealing body.
2. The electronic device according to claim 1 , wherein the end (44 a) of the extension portion and the fusion portion have different surface states.
3. The electronic device of claim 2 , wherein the termination is a cut surface.
4. The electronic device of claim 3 , wherein the termination is flush with the outer surface of the encapsulant.
5. The electronic device according to claim 3 , wherein the extension portion extends to the outside of the sealing body through the opening of the outflow passage.
6. The electronic device according to claim 2 , wherein the end is a broken surface and is located midway along the outlet passage.
7. The sealing body has one surface (30a), a back surface (30b) that is the surface opposite to the one surface in the thickness direction of the fusing portion, and side surfaces (30c, 30e, 30f) that are continuous with the one surface and the back surface, The electronic device according to claim 2 , wherein the outlet passage is open to the side surface.
8. The electronic device according to claim 7 , wherein a cross-sectional area of the extension portion is smaller than a cross-sectional area of the fusing portion.
9. The outlet passage extends in one direction, The electronic device according to claim 7 , wherein an angle between the outer surface of the sealing body and a wall surface of the outflow passage is equal to or greater than 90 degrees.
10. The electronic device according to claim 7, wherein the wiring member is a lead frame (40).
11. A semiconductor element (50) is provided which is sealed in the sealing body, the lead frame has a mounting portion (41) that is thicker than the fusing portion and the extension portion and to which the semiconductor element is connected; The electronic device according to claim 10 , wherein a lower surface of the mounting portion opposite a connection surface of the semiconductor element is exposed from the sealing body, and lower surfaces of the fusing portion and the extension portion are covered by the sealing body.
12. The electronic device according to claim 11 , wherein the outflow passage is provided parallel to the lower surface of the mounting portion exposed from the sealing body.
13. A semiconductor element (50); a circuit element (40) separate from the wiring member and the semiconductor element, the sealing body seals the semiconductor element and the circuit element together with the wiring member, 8. The electronic device according to claim 7, wherein the wiring member is a clip (60) that electrically connects the semiconductor element and the circuit element.
14. A plurality of the semiconductor elements are provided to provide a plurality of systems; The electronic device according to claim 11, wherein the wiring member has the fusing portion for each of the systems.
15. 2. The electronic device of claim 1, wherein the fusing portion and the extension portion are formed using a material having a lower melting point than a portion of the wiring member excluding the fusing portion and the extension portion, or a material having a higher electrical resistivity than a portion of the wiring member excluding the fusing portion and the extension portion.
Citation Information
Patent Citations
Electronic device
JP2011146539A