Bonding system and bonding method

Abstract

To provide a bonding system and a bonding method that suppress the occurrence of bonding defects between a first object to be bonded and a second object to be bonded.SOLUTION: An activation treatment device 60 of a chip bonding system positions a sheet TE to which a chip CP is attached in an orientation in which a bonding surface CPf of the chip CP faces vertically downward, irradiates the bonding surface CPf of the chip CP with a particle beam from a particle beam source 61 arranged vertically below the chip CP, and then inverts the sheet TE to which the chip CP is attached such that the bonding surface CPf of the chip CP faces vertically upward to irradiate the bonding surface CPf of the chip CP with radicals from a radical source 67 arranged vertically above the chip CP.SELECTED DRAWING: Figure 5

Description

[Technical field]

[0001] The present invention relates to a bonding system and a bonding method. [Background technology]

[0002] A method has also been proposed in which the bonding surfaces of two objects to be bonded are subjected to plasma treatment, and then the bonding surfaces of the two objects are brought into contact with each other to bond them (see, for example, Patent Document 1). Here, the plasma treatment is performed by exposing the objects to any of the plasmas of oxygen, argon, NH3, and CF4RIE (Reactive Ion Etching). A method is being provided in which the bonding surface of the chip to be bonded to the substrate is subjected to plasma treatment, and then the bonding surface of the chip is brought into contact with the substrate to bond the chip to the substrate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Special Publication No. 2003-523627 Summary of the Invention [Problem to be solved by the invention]

[0004] However, the method described in Patent Document 1 has the risk of causing poor bonding between the chip and the substrate.

[0005] The present invention has been made in consideration of the above circumstances, and has an object to provide a bonding system and a bonding method that suppress the occurrence of poor bonding between a first object to be bonded and a second object to be bonded. [Means for solving the problem]

[0006] In order to achieve the above object, the joint system according to the present invention comprises: A joining system for joining a first object to a second object, comprising: an activation treatment device including a particle beam source for irradiating a bonding surface of the second object with a particle beam to activate the bonding surface of the second object, and a radical source for irradiating the bonding surface of the second object with radicals to activate the bonding surface of the second object, the activation treatment being performed on the bonding surface of the second object with the particle beam irradiated from the particle beam source, and then performing an activation treatment on the bonding surface of the second object with the radicals irradiated from the radical source; a bonding device that bonds the second object to the first object by bringing the second object, the bonding surface of which has been activated by the activation treatment device, into contact with the first object, The activation treatment device positions the second object to be bonded in a position where the bonding surface of the second object faces vertically downward, irradiates the particle beam from the particle beam source arranged vertically below the second object to the bonding surface of the second object, then inverts the second object to a position where the bonding surface of the second object faces vertically upward, and irradiates the radicals from the radical source arranged vertically above the second object to the bonding surface of the second object.

[0007] A bonding method according to another aspect of the present invention comprises: A method for joining a first object to a second object, comprising the steps of: a first activation step of activating a bonding surface of the second object by irradiating at least the bonding surface of the second object with a particle beam; a second activation step of irradiating the bonding surface of the second object with radicals after the first activation step; a bonding step of bonding the second object to be bonded to the first object to be bonded by bringing the second object to be bonded, the bonding surface of which has been activated, into contact with the first object to be bonded, In the first activation step, the second object to be bonded is placed in a position in which a bonding surface of the second object to be bonded faces vertically downward, and the particle beam is irradiated onto the bonding surface of the second object to be bonded from vertically downward; After the first activation step, the second object to be bonded is inverted so that the bonding surface of the second object to be bonded faces vertically upward, and then, in the second activation step, the radicals are irradiated to the bonding surface of the second object to be bonded from vertically above. Effect of the Invention

[0008] According to the present invention, the occurrence of poor bonding between the first and second objects is suppressed. [Brief description of the drawings]

[0009] [Figure 1] 1 is a schematic configuration diagram of a tip joining system according to an embodiment of the present invention. [Diagram 2] 1 is a schematic configuration diagram of a part of a chip joining system according to an embodiment, as viewed from the side; [Figure 3A] FIG. 2 is a plan view of a tip holding portion according to the embodiment. [Figure 3B] 1 is a cross-sectional view showing a part of a chip transport device according to an embodiment. [Figure 4A] 1 is a cross-sectional view showing a head of a bonding apparatus according to an embodiment. [Figure 4B] 1 is a plan view showing a head of a bonding apparatus according to an embodiment; [Diagram 5] 1 is a schematic configuration diagram of an activation treatment apparatus according to an embodiment; [Figure 6] 5A and 5B are diagrams illustrating the operation of the activation processing device according to the embodiment; [Figure 7] FIG. 2 is a block diagram showing a control unit according to the embodiment. [Figure 8] 4 is a flowchart showing an example of a flow of a chip bonding method according to the embodiment. [Figure 9A] 3 is a schematic side view showing a state in which a particle beam is irradiated in the activation treatment apparatus according to the embodiment; FIG. [Figure 9B] 3 is a schematic plan view showing a state in which a particle beam is irradiated in the activation treatment apparatus according to the embodiment; FIG. [Figure 10A]1 is a schematic side view showing a state in which a sheet is turned over in an activation treatment apparatus according to an embodiment. FIG. [Figure 10B] 4 is a schematic side view showing a state in which nitrogen radicals are irradiated in the activation treatment apparatus according to the embodiment; FIG. [Figure 11A] 1 is a schematic plan view showing a state in which chips are supplied from a chip supply unit in a chip joining system according to an embodiment. FIG. [Figure 11B] 1 is a schematic side view showing a state in which chips are supplied from a chip supply unit in a chip joining system according to an embodiment. FIG. [Figure 12A] 1 is a schematic plan view showing how a chip is transferred from a chip transport unit to a head in a chip joining system according to an embodiment. FIG. [Figure 12B] 1 is a schematic side view showing how a chip is transferred from a chip transport unit to a head in a chip joining system according to an embodiment. FIG. [Figure 13] FIG. 13 is a schematic configuration diagram of an activation treatment apparatus according to a comparative example. [Figure 14A] 13 is a schematic diagram showing a state before a holding frame is moved in a support portion of a cleaning device according to a modified example. FIG. [Figure 14B] 13 is a schematic diagram showing a state in which a holding frame is moved in a support portion of a cleaning device according to a modified example. FIG. [Figure 14C] 13 is a schematic diagram showing how a frame support portion and an inner support portion of a support portion of a cleaning device according to a modified example are rotated. FIG. [Figure 15A] 13 is a schematic diagram of a substrate to be diced according to a modified example. FIG. [Figure 15B] FIG. 13 is a schematic diagram of a chip CP according to a modified example. [Figure 16A] 13 is a schematic cross-sectional view of a tip holding portion according to a modified example. FIG. [Figure 16B] 13 is a schematic cross-sectional view of a tip holding portion according to a modified example. FIG. [Figure 17A] FIG. 13 is a schematic diagram showing a part of a bonding apparatus according to a modified example. [Figure 17B] FIG. 13 is a schematic diagram showing a part of a bonding apparatus according to a modified example. [Figure 17C] FIG. 13 is a schematic diagram showing a part of a bonding apparatus according to a modified example. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, a chip bonding system according to an embodiment of the present invention will be described with reference to the drawings. The chip bonding system according to the present embodiment is a system for mounting a chip on a substrate. Here, the substrate corresponds to the first bonded object, and the chip corresponds to the second bonded object. The chip is, for example, a semiconductor chip supplied from a diced substrate. Also, the chip may be a chip in which only an insulating material is exposed on the bonding surface to be bonded to the substrate, or a chip in which an insulating material and a conductive material are exposed. Here, examples of the insulating material include oxides such as SiO2 and Al2O3, nitrides such as SiN and AlN, oxynitrides such as SiON, or resins. Also, examples of the conductive material include semiconductor materials such as Si and Ge, and metals such as Cu, Al, and solder. That is, the chip may have a plurality of types of regions formed on its bonding surface, each made of a different material. Specifically, the chip may have an electrode and an insulating film provided on its bonding surface, and the insulating film may be made of oxides such as SiO2 and Al2O3, or nitrides such as SiN and AlN. This chip bonding system performs an activation process on the mounting surface of the substrate on which the chip is mounted and the bonding surface of the chip, and then bonds the chip to the substrate by contacting or applying pressure to it, and then, or at the same time, heat is applied to firmly bond the chip to the substrate.

[0011] As shown in FIG. 1, the chip bonding system 1 according to the present embodiment includes a chip supply device 10, a chip transport device 39, a bonding device 30, an activation processing device 60, a transport device 70, a carry-in / out unit 80, a cleaning device 85, and a control unit 90. The transport device 70 has a transport robot 71 having an arm that holds a holding frame 112 that holds a substrate WT or a sheet TE to which a chip CP is attached. Here, the sheet TE is formed of, for example, a resin. As shown by an arrow AR11 in FIG. 1, the transport robot 71 is capable of moving the holding frame 112 that holds the substrate WT or the sheet TE to which a chip CP is attached, received from the carry-in / out unit 80, to a position where the holding frame 112 is transferred to each of the activation processing device 60, the cleaning device 85, the bonding device 30, and the chip supply device 10. Here, the holding frame 112 that holds the sheet TE to which a chip CP is attached corresponds to an object including the chip CP.

[0012] When the transport robot 71 receives the substrate WT from the carry-in / out unit 80, it moves to a position where it will be transferred to the activation processing device 60 while holding the received substrate WT, and transfers the substrate WT to the activation processing device 60. Furthermore, after the activation processing of the mounting surface WTf of the substrate WT is completed in the activation processing device 60, the transport robot 71 receives the substrate WT from the activation processing device 60, and transfers the received substrate WT to the cleaning device 85. Furthermore, after the cleaning device 85 completes the water cleaning of the substrate WT, the transport robot 71 receives the substrate WT from the cleaning device 85, and inverts the substrate WT while holding the received substrate WT, and then moves to a position where it will be transferred to the bonding device 30. Then, the transport robot 71 transfers the substrate WT to the bonding device 30.

[0013] Furthermore, when the transport robot 71 receives the holding frame 112 holding the sheet TE to which the chips CP are attached from the carry-in / out unit 80, it moves the holding frame 112 while gripping it to a position for transferring the holding frame 112 to the activation processing device 60, and transfers the holding frame 112 to the activation processing device 60. Furthermore, after the activation processing of the bonding surface of the chips CP attached to the sheet TE is completed in the activation processing device 60, the transport robot 71 receives the holding frame 112 from the activation processing device 60, and transfers the received holding frame 112 to the chip supply device 10. Furthermore, for example, a HEPA (High Efficiency Particulate Air) filter (not shown) is installed in the transport device 70. As a result, the inside of the transport device 70 is an atmospheric pressure environment with extremely few particles.

[0014] The cleaning apparatus 85 has a stage 852 that supports the substrate WT, a stage drive unit 853 that rotates the stage 852, and a cleaning head 851 that is disposed vertically above the stage 852 and ejects water vertically downward. With the substrate WT supported on the stage 852, the cleaning apparatus 85 rotates the stage 852 by the stage drive unit 853, while ejecting water from the cleaning head 851 toward the substrate WT, thereby cleaning the substrate WT with water.

[0015] The chip supply device 10 is a second bonded object supply device that cuts out one chip CP from among multiple chips CPs produced by dicing a substrate and supplies the chip CP to the bonding device 30. Here, dicing refers to a process of cutting a substrate on which multiple electronic components are built in vertically and horizontally to form chips. The chip CP may have multiple types of regions made of different materials formed on the bonding surface CPf, for example. That is, the bonding surface CPf of the chip CP may have a region made of an insulating material and a region made of a metal. As shown in FIG. 2, the chip supply device 10 has a chip supply unit 11. The chip supply unit 11 has a holding frame 112 that holds a sheet TE to which multiple chips CPs are attached, a frame holding unit 119 that holds the holding frame 112, a pickup mechanism 111 that picks up one chip CP from among the multiple chips CPs, and a cover 114. The chip supply unit 11 also has a holding frame driving unit 113 that drives the holding frame 112 in the XY direction or in a direction rotating around the Z axis. The frame holding unit 119 holds the holding frame 112 in an orientation in which the surface of the sheet TE to which the multiple chips CP are attached faces vertically upward (+Z direction). The holding frame 112 and the frame holding unit 119 form a sheet holding unit that holds the sheet TE, on which the multiple chips CP are attached on the side opposite to the bonding surface CPf side, in an orientation in which the bonding surface CPf faces vertically upward.

[0016] The pickup mechanism 111 separates one of the chips CP from the sheet TE by cutting out the chip CP from the side opposite to the chips CP. Here, the pickup mechanism 111 holds a peripheral portion, which is a third portion different from a central portion, which is a first portion held by a head 33H described later, on the side opposite to the bonding surface CPf side of the chip CP, and cuts out the chip CP. The pickup mechanism 111 has a needle 111a and is movable in the vertical direction as shown by an arrow AR14 in FIG. 2. The cover 114 is disposed so as to cover the chips CP vertically above, and has a hole 114a in a portion facing the pickup mechanism 111. There are, for example, four needles 111a. However, the number of needles 111a may be three or five or more. The pickup mechanism 111 supplies the chips CP by piercing the sheet TE with a needle 111a from below the sheet TE vertically (-Z direction) and lifting the chips CP vertically upward (+Z direction). Then, each chip CP attached to the sheet TE is pushed out one by one by the needle 111a through a hole 114a in the cover 114 above the cover 114, and is delivered to the chip transport device 39. The holding frame driving unit 113 changes the position of the chip CP located vertically below the needle 111a by driving the holding frame 112 in the XY direction or in a direction rotating around the Z axis.

[0017] The chip transport device (also called a turret) 39 is a second object transport device that transports the chip CP supplied from the chip supply unit 11 to a transfer position Pos1 where the chip CP is transferred to the head 33H of the bonding unit 33 of the bonding device 30. As shown in FIG. 1, the chip transport device 39 has two long plates 391, an arm 394, a chip holder 393 provided at the tip of the arm 394, and a plate drive unit 392 that rotates the two plates 391 in unison. The two plates 391 are long rectangular boxes, and one end of each plate 391 rotates around the other end located between the chip supply unit 11 and the head 33H. The two plates 391 are arranged such that their longitudinal directions are at an angle of 90 degrees to each other, for example. The number of plates 391 is not limited to two, and may be three or more.

[0018] The chip holding part 393 is a second object holding part provided at the tip of an arm 394 as shown in FIG. 3A and having two legs 393a for holding the chip CP. The plate 391 is capable of housing a long arm 394 inside as shown in FIG. 3B. An arm driving part 395 for driving the arm 394 along the longitudinal direction of the plate 391 is provided inside the plate 391. This allows the chip transport device 39 to put the tip of the arm 394 in a state where it protrudes outside the plate 391 or puts the tip of the arm 394 in a state where it is retracted inside the plate 391 by the arm driving part 395. When the chip transport device 39 turns the plate 391, the arm 394 is retracted into the plate 391 as shown by the arrow AR25 in FIG. 3B, and the chip holding part 393 is stored inside the plate 391. This suppresses adhesion of particles to the chip CP during transport. The two legs 393a may be provided with suction grooves (not shown). In this case, the chip CP is suction-held by the legs 392a, so that the chip CP can be transported without being displaced. In addition, a protrusion (not shown) may be provided at the tip of the legs 393a to prevent the chip CP from flying out due to centrifugal force generated when the plate 391 rotates.

[0019] 1, the pickup mechanism 111 and the head 33H are disposed in positions in the Z-axis direction that overlap with a path OB1 drawn by the tip of the arm 394 when the plate 391 rotates. When the chip transport device 39 receives the chip CP from the pickup mechanism 111, it transports the chip CP to a transfer position Pos1 where the chip CP overlaps with the head 33H by rotating the plate 391 about the axis AX as shown by the arrow AR1 in FIG.

[0020] The bonding device 30 is a chip bonding device having a stage unit 31, a bonding section 33 having a head 33H, and a head driving section 36 for driving the head 33H. The head 33H has a chip tool 411, a head main body 413, a chip support section 432a, and a support driving section 432b, as shown in FIG. 4A. The chip tool 411 is formed of, for example, silicon (Si). The head main body 413 has a holding mechanism 440 having an adsorption section for adsorbing and holding the chip CP on the chip tool 411, and an adsorption section (not shown) for fixing the chip tool 411 to the head main body 413 by vacuum adsorption. In addition, a ceramic heater, a coil heater, or the like is built into the head main body 413. The chip tool 411 has a through hole 411a formed at a position corresponding to the holding mechanism 440 of the head main body 413, and a through hole 411b into which the chip support section 432a is inserted.

[0021] The chip support 432a is, for example, a cylindrical suction post, and is a component support provided at the tip of the head 33H and movable in the vertical direction. The chip support 432a supports the center portion, which is a first portion, on the side opposite to the bonding surface CPf of the chip CP. One chip support 432a is provided at the center, for example, as shown in FIG. 4B.

[0022] The support part driving part 432b drives the chip support part 432a in the vertical direction, and reduces the pressure inside the chip support part 432a with the chip CP placed on the tip of the chip support part 432a, thereby adsorbing the chip CP to the tip of the chip support part 432a. The support part driving part 432b is located at a transfer position (see Pos1 in FIG. 1) to the head 33H with the chip holding part 393 of the chip transport device 39 holding the chip CP, and moves the chip support part 432a vertically upward from the chip holding part 393 with the tip of the chip support part 432a supporting the center part of the chip CP. As a result, the chip CP is transferred from the chip holding part 393 of the chip transport device 39 to the head 33H.

[0023] The head driving unit 36 ​​moves the head 33H holding the chip CP transferred at the transfer position Pos1 (see FIG. 2) vertically upward (+Z direction) to bring the head 33H closer to the stage 315 and mount the chip CP on the mounting surface WTf of the substrate WT. More specifically, the head driving unit 36 ​​moves the head 33H holding the chip CP vertically upward (+Z direction) to bring the head 33H closer to the stage 315 and bring the chip CP into contact with the mounting surface WTf of the substrate WT and bond it to the substrate WT. Here, the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP to be bonded to the substrate WT have been activated by the activation processing device 60. In addition, the mounting surface WTf of the substrate WT has been subjected to the activation processing and then cleaned with water by the cleaning device 85. Therefore, by bringing the bonding surface CPf of the chip CP into contact with the mounting surface WTf of the substrate WT, the chip CP is so-called hydrophilically bonded to the substrate WT via hydroxyl groups (OH groups).

[0024] The stage unit 31 has a stage 315 that holds the substrate WT in an orientation in which the mounting surface WTf of the substrate WT on which the chips CP are mounted faces vertically downward (-Z direction), and a stage driving section 320 that drives the stage 315. The stage 315 can move in the X direction, Y direction and rotation direction. This makes it possible to change the relative positional relationship between the bonding section 33 and the stage 315, and to adjust the mounting positions of the chips CP on the substrate WT.

[0025] The activation processing device 60 performs activation processing to activate the mounting surface WTf of the substrate WT or the bonding surface CPf of the chip CP. The activation processing device 60 performs activation processing by setting the holding frame 112 holding the substrate WT or the sheet TE to which the chip CP is attached on one processing surface without arranging them opposite each other. That is, the activation processing device 60 does not perform activation processing in a state in which the holding frame 112 holding the two substrates WT or the sheet TE to which the two chips CP are attached is opposed to each other. If they are arranged opposite each other and processed, the material of one substrate WT or chip CP will adhere to the other chip CP or substrate WT, resulting in the mixture of multiple materials. As shown in FIG. 5, the activation processing device 60 has a chamber 64, a support unit 62 that supports the holding frame 112, a particle beam source 61, a beam source transport unit 63, and a radical source 67. The chamber 64 is connected to a vacuum pump 652 via an exhaust pipe 651. When the vacuum pump 652 is operated, the gas within the chamber 64 is exhausted to the outside of the chamber 64 through the exhaust pipe 651, and the air pressure within the chamber 64 is reduced (depressurized).

[0026] The support unit 62 has a frame-shaped frame holding unit 621 that holds the holding frame 112 on the inside, a cover 622, and a frame holding unit drive unit 623 that supports the frame holding unit 621 and drives the frame holding unit 621 to rotate around one axis perpendicular to its thickness direction as shown by the arrow AR33 in FIG. 5. The support unit 62 corresponds to an object support unit that supports the holding frame 112 that holds the sheet TE to which the chip CP, which is the object, is attached. A chip holding unit that holds the chip CP is configured. When the substrate WT is inserted, the support unit 62 supports the substrate WT in a state in which the frame holding unit 621 holds the periphery of the substrate WT. The support unit 62 supports the holding frame 112 in a state in which the holding frame 112 that holds the sheet TE to which the chip CP is attached is set on one processing surface without being arranged opposite to the holding frame 112 that holds the sheet TE to which the chip CP is attached. The cover 622 is made of, for example, glass, and covers the holding frame 112 and an area outside the portion of the sheet TE on one side to which the chips CP are attached, when the holding frame 112 that holds the sheet TE to which the chips CP are attached is held by the frame holding part 621. Here, when a plurality of chips CP are obtained by dicing a substrate (not shown) that is circular in plan view, they are attached to the circular area in plan view of the sheet TE. In this case, the cover 622 is adapted to have a shape that covers the area outside the circular area in plan view of the sheet TE to which the plurality of chips CP are attached. This prevents the particle beam source 61 from irradiating the portion of the sheet TE other than the portion to which the chips CP are attached.

[0027] The particle beam source 61 is, for example, a fast atom beam (FAB) source, and includes a discharge chamber 612, an electrode 611 disposed in the discharge chamber 612, a beam source driver 613, and a gas supplier 614 for supplying nitrogen gas into the discharge chamber 612. A FAB emission port 612a for emitting neutral atoms is provided on the peripheral wall of the discharge chamber 612. The discharge chamber 612 is made of a carbon material. Here, the discharge chamber 612 is in the shape of a long box, and a plurality of FAB emission ports 612a are arranged in a straight line along the longitudinal direction. The beam source driver 613 includes a plasma generator (not shown) for generating plasma of nitrogen gas in the discharge chamber 612, and a DC power supply (not shown) for applying a DC voltage between the electrode 611 and the peripheral wall of the discharge chamber 612. The beam source driver 613 applies a DC voltage between the peripheral wall of the discharge chamber 612 and the electrode 611 while generating plasma of nitrogen gas in the discharge chamber 612. At this time, nitrogen ions in the plasma are attracted to the peripheral wall of the discharge chamber 612. At this time, the nitrogen ions moving toward the FAB emission port 612a receive electrons from the peripheral wall of the discharge chamber 612, which is made of a carbon material and is located on the outer periphery of the FAB emission port 612a, when passing through the FAB emission port 612a. Then, these nitrogen ions become electrically neutralized nitrogen atoms and are released outside the discharge chamber 612. However, some of the nitrogen ions cannot receive electrons from the peripheral wall of the discharge chamber 612 and are released outside the discharge chamber 612 as nitrogen ions.

[0028] Here, the particle beam source 61 is set so that the incident angle of the particle beam with respect to a virtual plane S1 including at least one of the bonding surfaces CPf of at least one chip CP attached to the sheet TE is 30 degrees or more and 80 degrees or less. That is, the angle (incident angle) θ1 between the irradiation axis J1 of the particle beam and the normal direction N1 of the virtual plane S1 is set so as to be 30 degrees or more and 80 degrees or less. In addition, as shown in FIG. 6, the incident angle θ1 of the particle beam is set so that the relational expression of the following formula (1) is established, where the interval between adjacent chips CP is L1 and the thickness of the chip CP is T1.

[0029]

number

[0030] This prevents the particle beam from being directly irradiated onto the sheet TE, which in turn prevents impurities from being generated from the sheet TE due to the particle beam being irradiated onto the sheet TE, thereby providing an advantage in that damage to the bonding surface CPf of the chip CP caused by impurities generated from the sheet TE is prevented.

[0031] The beam source transport unit 63 has a long support rod 631 that is inserted into a hole 64a provided in the chamber 64 and supports the particle beam source 61 at one end, a support 632 that supports the support rod 631 at the other end of the support rod 631, and a support drive unit 633 that drives the support 632. The beam source transport unit 63 also has a bellows 634 that is interposed between the outer periphery of the hole 64a of the chamber 64 and the support 632 to maintain the degree of vacuum in the chamber 64. The support drive unit 633 changes the position of the particle beam source 61 in the chamber 64 as shown by the arrow AR32 in FIG. 5 by driving the support 632 in a direction in which the support rod 631 is inserted into and removed from the chamber 64 as shown by the arrow AR31 in FIG. 5. Here, the beam source transport unit 63 moves the particle beam source 61 in a direction perpendicular to the arrangement direction of the multiple FAB emission ports 612a.

[0032] Incidentally, the particle beam source 61 has a plurality of FAB emission ports 612a arranged in a line as described above. The particle beam source 61 is moved in a direction perpendicular to the arrangement direction of the plurality of FAB emission ports 612a. As a result, the shape of the area irradiated with the particle beam becomes rectangular. On the other hand, when the plurality of chips CP are obtained by dicing a substrate (not shown) having a circular shape in plan view, they are attached to a circular area in plan view on the sheet TE. Therefore, when the particle beam is to be irradiated to the entirety of the plurality of chips CP attached to the sheet TE, it is necessary to set the area irradiated with the particle beam to a rectangular area including the circular area in plan view to which the plurality of chips CP are attached. In this case, in a configuration without the above-mentioned cover 622, the particle beam is irradiated to the area outside the plurality of chips CP on the sheet TE or the holding frame 112, which makes it easy for impurities to be generated from the sheet TE. On the other hand, in this embodiment, the cover 622 covers the area outside the plurality of chips CP on the sheet TE or the holding frame 112. This blocks the particle beam irradiated to the area outside the plurality of chips CP on the sheet TE or the holding frame 112, and the generation of impurities from the sheet TE or the holding frame 112 is suppressed.

[0033] The radical source 67 may be an ICP (Inductively Coupled Plasma) plasma source having a plasma chamber 671, a glass window 674, a trap plate 675, a waveguide 673, and a magnetron 672. The plasma chamber 671 is connected to the waveguide 673 via the glass window 674. The radical source 67 also has a gas supply unit 677 that supplies nitrogen gas into the plasma chamber 671 via a supply pipe 676. Microwaves generated by the magnetron 672 are introduced into the plasma chamber 671 through the waveguide 673. The magnetron 672 may be one that generates microwaves with a frequency of, for example, 2.45 GHz. In this case, the power supplied from the magnetron 672 to the plasma chamber 671 is set to, for example, 2.5 kW. When microwaves are introduced from the waveguide 673 while nitrogen gas is introduced into the plasma chamber 671, plasma PLM is formed in the plasma chamber 671 by the microwaves. The trap plate 675 traps ions contained in the plasma PLM and allows only radicals to flow down into the chamber 64. In other words, plasma is generated in the plasma chamber 671, and only radicals contained in the plasma flow down below the plasma chamber 671.

[0034] The radical source 67 is not limited to a configuration including a magnetron 672 and a waveguide 673, but may be a configuration including, for example, a plate electrode provided on a glass window 674 and a high-frequency power supply electrically connected to the plate electrode. In this case, the high-frequency power supply may be one that applies a high-frequency bias of, for example, 27 MHz. The power supplied from the high-frequency power supply to the plasma chamber 671 is set to, for example, 250 W. When irradiating the particle beam, the pressure in the chamber 64 is evacuated to the order of 10-3 Pa using, for example, a turbo molecular pump, but when performing radical processing, the pressure in the chamber 64 is increased to about several tens of Pa.

[0035] The control unit 90 has an MPU (Micro Processing Unit), a main memory, an auxiliary memory, an interface, and a bus connecting each unit. Here, the main memory is composed of a volatile memory and is used as a work area of ​​the MPU. The auxiliary memory is composed of a non-volatile memory and stores a program executed by the MPU. The auxiliary memory also stores information indicating a first distance and a second distance, which will be described later. As shown in FIG. 7, the control unit 90 is connected to the head drive unit 36, the stage drive unit 320, the plate drive unit 392, the arm drive unit 395, the pickup mechanism 111, the holder frame drive unit 113, the cleaning head 851, the stage drive unit 853, the beam source drive unit 613, the beam source transport unit 63, the frame holder drive unit 623, the magnetron 672, and the transport robot 71. The MPU then loads the program stored in the auxiliary memory into the main memory and executes it, thereby outputting control signals via the interface to the head driver 36, the stage driver 320, the plate driver 392, the arm driver 395, the pickup mechanism 111, the holding frame driver 113, the cleaning head 851, the stage driver 853, the beam source driver 613, the beam source transport unit 63, the frame holding unit driver 623, the magnetron 672 and the transport robot 71.

[0036] Next, the operation of the chip bonding system 1 according to the present embodiment will be described with reference to FIGS. 8 to 12. The holding frame 112 that holds the substrate WT and the sheet TE to which the chip CP is attached is assumed to be loaded from the loading / unloading unit 80. First, as shown in FIG. 8, the chip bonding system 1 loads the substrate WT loaded from the loading / unloading unit 80 into the activation processing device 60 to execute a substrate mounting surface activation process for performing activation processing on the mounting surface WTf of the substrate WT (step S1). Here, the activation processing device 60 first irradiates the mounting surface WTf with a particle beam containing nitrogen atoms from the particle beam source 61 in a state in which the mounting surface WTf of the substrate WT is supported by the support part 62 in a posture facing vertically downward. At this time, the power supplied to the particle beam source 61 is set to, for example, 1 kV and 100 mA. Also, the flow rate of the nitrogen gas introduced into the discharge chamber 612 of the particle beam source 61 is set to, for example, 100 sccm. Then, while irradiating the mounting surface WTf of the substrate WT with a particle beam from the particle beam source 61, the particle beam source 61 is caused to make one reciprocating motion at a speed of 1.2 to 14.0 mm / sec. Next, the activation processing device 60 turns over the substrate WT held by the frame holding part 621 so that the mounting surface WTf of the substrate WT faces vertically upward. Then, the activation processing device 60 irradiates the mounting surface WTf of the substrate WT with nitrogen radicals from the radical source 67. Here, the power supplied from the magnetron 672 in the radical source 67 to the plasma chamber 671 is set to, for example, 2.5 kW. Note that, when the radical source 67 is configured to include a plate electrode provided on the above-mentioned glass window 674 and a high-frequency power source electrically connected to the plate electrode, the power supplied from the high-frequency power source to the plasma chamber 671 is set to, for example, 250 W. Also, the flow rate of the nitrogen gas introduced into the plasma chamber 671 is set to, for example, 100 sccm. Furthermore, the time for which the irradiation of the mounting surface WTf of the substrate WT with the radicals continues is set to, for example, 15 sec. For example, when a metal electrode and an insulating film are provided on both the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP, it is preferable to irradiate the mounting surface WTf of the substrate WT with a particle beam.

[0037] Next, the chip bonding system 1 loads the substrate WT that has been subjected to the activation process from the activation processing device 60 into the cleaning device 85, and executes a water cleaning step of cleaning the mounting surface WTf of the substrate WT with water (step S2). Here, the cleaning device 85 cleans the substrate WT with water by ejecting water from the cleaning head 851 toward the substrate WT while rotating the stage 852 by the stage driving unit 853 in a state where the substrate WT is supported on the stage 852. As a result, a relatively large number of hydroxyl groups (OH groups) or water molecules are attached to the mounting surface WTf of the substrate WT.

[0038] Next, the chip bonding system 1 executes a substrate preparation step in which the substrate WT is held on the stage 315 of the bonding apparatus 30 to prepare for bonding the chip CP to the substrate WT (step S3). At this time, the transfer robot 71 receives the substrate WT from the cleaning apparatus 85 with its mounting surface WTf facing vertically upward. Thereafter, the transfer robot 71 inverts the received substrate WT and holds the substrate WT with its mounting surface WTf facing vertically downward. Then, the transfer robot 71 transfers the substrate WT to the stage 315 of the bonding apparatus 30 with its mounting surface WTf facing vertically downward.

[0039] Thereafter, the chip bonding system 1 performs a chip bonding surface activation step of performing activation processing on the bonding surface CPf of the chip CP by inserting the holding frame 112 holding the sheet TE on which the chip CP is attached, which is inserted from the carry-in / out unit 80, into the activation processing device 60 (step S4). Here, the activation processing device 60 first makes the support unit 62 support the holding frame 112 in a position in which the one surface side of the sheet TE on which the chip CP is attached faces the particle beam source 61 side, that is, in a position facing vertically downward. Then, the activation processing device 60 performs a first activation step of irradiating a particle beam from the particle beam source 61 toward the bonding surface CPf of each chip CP in a state in which the chip CP is attached to the sheet TE. Here, the activation processing device 60 prepares only one holding frame 112 for holding the sheet TE on which multiple chips CP are attached, and irradiates a particle beam onto the chip CP attached to the sheet TE held by the prepared holding frame 112. Also, the activation processing device 60 moves the particle beam source 61 in the X-axis direction while irradiating the bonding surface CPf of the chip CP with a particle beam, for example, as shown by the arrow AR34 in FIG. 9A and FIG. 9B. Here, the activation processing device 60 irradiates the bonding surfaces CPf of all the chips CP attached to the tape TE with the particle beam while moving the particle beam source 61 in the +X direction, for example, and then irradiates the bonding surfaces CPf of the chips CP with the particle beam while moving the particle beam source 61 in the -X direction. Also, the moving speed of the particle beam source 61 is set to, for example, 1.2 to 14.0 mm / sec. Furthermore, the angle (incident angle) θ1 between the irradiation axis J1 of the particle beam and the normal direction N1 of the virtual plane S1 shown in FIG. 9(A) is set to be 30 degrees or more and 80 degrees or less. Also, the power supplied to the particle beam source 61 is set to, for example, 1 kV and 100 mA. The flow rate of the nitrogen gas introduced into the discharge chamber 612 of the particle beam source 61 is set to, for example, 100 sccm. At this time, the impurities CPA1 generated from the chip CP or the sheet TE are blown away from the chip CP and do not return to the bonding surface CPf side of the chip CP.

[0040] Next, the activation processing device 60 inverts the holding frame 112 held by the frame holding unit 621, as shown by the arrow AR36 in Fig. 10A, so that the bonding surface CPf of the chip CP attached to the sheet TE faces vertically upward. Then, the activation processing device 60 executes a second activation step of irradiating the bonding surface CPf of the chip CP with nitrogen radicals by the radical source 67, as shown by the arrow AR37 in Fig. 10B. Here, the power supplied to the plasma chamber 671 in the radical source 67, the flow rate of the nitrogen gas introduced into the plasma chamber 671, and the irradiation time of the nitrogen radicals are set to the same conditions as, for example, the above-mentioned substrate mounting surface activation step.

[0041] 8, the chip bonding system 1 then executes a chip preparation step in which the chip supply unit 11 of the chip supply device 10 holds the holding frame 112 holding the sheet TE to which the chip CP is attached, to prepare for bonding the chip CP to the substrate WT (step S5). At this time, the transfer robot 71 receives the holding frame 112 holding the sheet TE from the activation processing device 60 in a position in which the bonding surface CPf of the chip CP faces vertically upward. Thereafter, the transfer robot 71 transfers the received holding frame 112 to the chip supply unit 11 of the chip supply device 10 as it is.

[0042] Next, the chip bonding system 1 executes a chip bonding process in which the chip CP, whose bonding surface CPf has been activated by the activation processing device 60, is brought into contact with the mounting surface WTf of the substrate WT to bond it to the substrate WT (step S6). Here, the chip bonding system 1 first sets one plate 391 of the chip transport device 39 in a state facing the chip supply unit 11. Next, the pick-up mechanism 111 moves vertically upward to perform a chip supply process (second object supply process) in which one chip CP is cut out from the opposite side of the sheet TE to the side of the multiple chips CPs, and the one chip CP is released from the sheet TE. In this state, the chip transport device 39 protrudes the arm 394 from the plate 391. At this time, the needle 111a of the pick-up mechanism 111 is placed between the two leg pieces 393a of the chip holding unit 393. In this way, the chip CP is ready to be transferred to the chip holding unit 393, as shown in FIG. 11A and FIG. 11B. When the pickup mechanism 111 is moved vertically downward from this state, the chip CP is transferred to the chip holding part 393 .

[0043] Next, the chip bonding system 1 rotates the plate 391 in the direction of the arrow AR1 in FIG. 11A. At this time, as shown in FIG. 12A, the chip holding part 393 at the tip of the arm 394 of the chip conveying device 39 is disposed at the transfer position Pos1 vertically above the head 33H of the bonding part 33. That is, the chip conveying device 39 conveys the chip CP received from the chip supply part 11 to the transfer position Pos1 where the chip CP is transferred to the head 33H. Then, the head driving part 36 moves the bonding part 33 vertically upward to bring the head 33H closer to the chip holding part 393 of the chip conveying device 39. Next, the support part driving part 432b moves the chip support part 432a vertically upward. As a result, the chip CP held by the chip holding part 393 is disposed vertically above the chip holding part 393 while being supported by the upper end part of the chip support part 432a as shown in FIG. 12B. Next, the chip transport device 39 retracts the arm 394 into the plate 391. Thereafter, the support drive unit 432b moves the chip support unit 432a vertically downward. As a result, the chip CP is held at the tip of the head 33H.

[0044] Thereafter, the chip bonding system 1 performs alignment to correct the relative positional deviation between the chip CP and the substrate WT by driving the stage 315 and rotating the bonding unit 33. Then, the chip bonding system 1 raises the head 33H to bond the chip CP to the substrate WT. Here, the mounting surface WTf of the substrate WT and the bonding surface CPf of the chip CP are hydrophilically bonded via hydroxyl groups (OH groups).

[0045] After the series of steps described above is completed, the substrate WT on which the chip CP is mounted is removed from the chip bonding system 1, and then placed in a heat treatment device (not shown) for heat treatment. The heat treatment device performs heat treatment on the substrate WT under conditions of, for example, a temperature of 350° C. and one hour.

[0046] Next, the results of evaluating the bonding strength between the chip CP and the substrate WT bonded by the chip bonding system according to the present embodiment will be described. Here, the results of evaluating the bonding strength between the chip CP and the substrate WT bonded by the chip bonding method according to the present embodiment and the results of evaluating the bonding strength between the chip CP and the substrate WT bonded by the chip bonding methods according to three types of comparative examples 1, 2, and 3 will be described. First, the chip bonding methods according to comparative examples 1, 2, and 3 will be described.

[0047] The chip bonding method according to Comparative Example 1 is different from the chip bonding method according to the embodiment in that an activation processing device 9060 as shown in FIG. 13 is used in the chip bonding surface activation step described with reference to FIG. 8. This activation processing device 9060 has a chamber 9064, a stage 9621 supporting the holding frame 112, a high-frequency power source 9061 that applies a high-frequency bias, and a gas supply unit 677 that supplies nitrogen gas into the chamber 9064 through a supply pipe 676. In FIG. 13, the same components as those in the activation processing device 60 according to the embodiment are given the same reference numerals as those in FIG. 5. The high-frequency power source 9061 applies a high-frequency bias to the chip CP attached to the supported sheet TE held by the holding frame 112 supported by the stage 9621. The high-frequency power source 9061 generates a high-frequency bias of, for example, 13.56 MHz. In this way, by applying a high frequency bias to the tip CP by the high frequency power supply 9061, a sheath region PLM9 is generated in the vicinity of the bonding surface CPf of the tip CP and the sheet TE, where ions having kinetic energy repeatedly collide with the tip CP and the sheet TE. The bonding surface CPf of the tip CP is activated by the ions having kinetic energy present in this sheath region PLM9. Here, impurities CPA9 generated from the tip CP or the sheet TE that are present in the sheath region PLM9 and ionized also collide with the bonding surface CPf of the tip CP.

[0048] The chip bonding method according to Comparative Example 2 differs from the chip bonding method according to the embodiment in that the chip bonding surface activation step described with reference to Fig. 8 uses an activation treatment device 9060 provided with the radical source 67 described in the embodiment. That is, in the chip bonding method according to Comparative Example 2, a high-frequency bias is applied to the chip CP to perform activation treatment on the bonding surface CPf of the chip CP, and then nitrogen radicals are irradiated onto the bonding surface CPf of the chip CP.

[0049] The chip bonding method according to Comparative Example 3 differs from the chip bonding direction according to the embodiment in that in the chip bonding surface activation step described with reference to Fig. 8, the activation processing device 60 only irradiates the bonding surface CPf of the chip CP with a particle beam and does not irradiate the bonding surface CPf of the chip CP with nitrogen radicals. Note that in Comparative Examples 1 to 3 and the chip bonding method according to the embodiment, an activation processing device used for irradiating the bonding surface CPf of the chip CP with nitrogen radicals was used that includes a plate electrode provided on a glass window 674 and a high-frequency power source electrically connected to the plate electrode, instead of the magnetron 672 and the waveguide 673 of the activation processing device 60 shown in Fig. 5.

[0050] Next, the results of evaluating the bonding strength between the chip CP and the substrate WT bonded to each other by the chip bonding methods according to Comparative Examples 1 to 3 and the chip bonding method according to the embodiment will be described. Here, a glass (SiO2) substrate was adopted as the substrate WT. Also, as the chip CP, a chip with only SiON exposed on the bonding surface CPf, a chip with SiON and Cu exposed on the bonding surface CPf, a chip with resin and Cu exposed on the bonding surface CPf, a chip with SiON and an alloy mainly composed of lead and tin (hereinafter referred to as "solder") exposed on the bonding surface CPf, and a chip with resin and solder exposed on the bonding surface CPf were adopted. That is, as the chip CP, a chip with only a region made of SiON on the bonding surface CPf, a chip with a region made of SiON and a region made of Cu formed on the bonding surface CPf, a chip with a region made of resin and a region made of Cu formed on the bonding surface CPf, a chip with a region made of SiON and a region made of solder formed on the bonding surface CPf, and a chip with a region made of resin and a region made of solder formed on the bonding surface CPf were adopted. The evaluation of the bonding strength was performed for 40 types of samples 1 to 40, which have different combinations of the type of gas used in the activation treatment of the bonding surface CPf of the chip CP, the chip bonding method employed, and the type of chip CP.

[0051] In addition, in the chip bonding surface activation process according to Comparative Examples 1 and 2, the bias power of the high frequency bias applied to the chip CP was set to 110 W in both cases. The duration of application of the high frequency bias to the chip CP was set to 30 sec. In addition, the degree of vacuum in the chamber 64 in the chip bonding surface activation process according to Comparative Examples 1 and 2 was set to 50 Pa for all samples. On the other hand, the degree of vacuum in the chamber 64 during particle beam irradiation in the chip bonding surface activation process according to Comparative Example 3 and the embodiment was set to 5.0×10-3 Pa for all samples. In addition, in the chip bonding surface activation process according to Comparative Example 2 and the embodiment, the power supplied from the high frequency power source to the plasma chamber 671 during nitrogen radical irradiation was set to 250 W in both cases.

[0052] In addition, for each of the samples after the chip CP was bonded to the substrate WT by the chip bonding methods according to the comparative examples 1 to 3 and the chip bonding method according to the embodiment, a heat treatment was performed on the substrate WT at a temperature of 350° C. for 1 hour in a heat treatment device. The material exposed on the bonding surface CPf of the chip CP and the processing conditions in the chip bonding surface activation step for each of the 40 types of samples 1 to 40 are summarized in Table 1 below. The column "Material exposed on bonding surface" in Table 1 indicates the material exposed on the bonding surface CPf of the chip CP for each sample. The column "Chip bonding surface activation step" indicates the activation processing method adopted in the chip bonding surface activation step for each sample. Specifically, "Comparative example 1" indicates that the chip bonding surface activation step according to the comparative example 1 described above was adopted, "Comparative example 2" indicates that the chip bonding surface activation step according to the comparative example 2 described above was adopted, and "Comparative example 3" indicates that the chip bonding surface activation step according to the comparative example 3 described above was adopted. Furthermore, "Embodiment" indicates that the chip bonding surface activation step according to the embodiment described with reference to FIG. 8 was adopted. In addition, for samples 1 to 20, the gas introduced into the chamber 9064 when applying a high frequency bias to the chip CP in the chip bonding surface activation step or the gas introduced into the discharge chamber 612 of the particle beam source 61 when irradiating the particle beam was nitrogen gas. On the other hand, for samples 21 to 40, the gas introduced into the chamber 9064 when applying a high frequency bias to the chip CP in the chip bonding surface activation step or the gas introduced into the discharge chamber 612 of the particle beam source 61 when irradiating the particle beam was argon (Ar) gas.

[0053] [Table 1]

[0054] The bond strength between the chip CP and the substrate WT for Samples 1 to 40 was evaluated by measuring the bond strength (surface energy equivalent) using a crack-and-open method in which a blade is inserted. In this crack-and-open method, first, a blade such as a razor blade is inserted from the periphery of the chip CP to the bonded portion of the chip CP and the substrate WT, which are bonded to each other, and the peel length of the chip CP is measured. For example, a blade having a thickness of 100 μm is used as the blade. Also, the peel length from the blade contact point is measured when the blade is inserted into four places on the periphery of the chip CP bonded to the substrate WT. Then, the strength of the bonded interface between the chip CP and the substrate WT was calculated in terms of surface energy per unit area from the peel length for each of the four places on the periphery of the chip CP, thereby evaluating the bond strength between the chip CP and the substrate WT. Note that when calculating the bond strength (surface energy equivalent) Eb from the peel length, the following relational expression (2) is used.

[0055]

number

[0056] Tables 2 and 3 show the average bonding strength (surface energy equivalent) at four points on the periphery of the chip CP of each of Samples 1 to 40. In Tables 2 and 3, the "Sample Name" column corresponds to Samples 1 to 40 in Table 1. The larger the bonding strength (surface energy equivalent) calculated for each sample, the greater the bonding strength between the chip CP and the substrate WT, and samples that have undergone bulk destruction are described as "bulk destruction." In Tables 2 and 3, the "Bonding Possible" column shows "○" when the chip CP was able to be bonded to the substrate WT, and "×" when the chip CP was not able to be bonded to the substrate WT. The bonding strength was calculated only for samples in which the chip CP was able to be bonded to the substrate WT.

[0057] [Table 2]

[0058] [Table 3]

[0059] From the evaluation results of Samples 2 to 5, 7 to 10, 22 to 25, and 27 to 30 in Tables 2 and 3, it is found that when the chip bonding surface activation process according to Comparative Examples 1 and 2 is adopted, if Cu, resin, or solder is exposed on the bonding surface CPf of the chip CP, the chip CP cannot be bonded to the substrate WT. From this, it is considered that when the chip bonding surface activation process according to Comparative Examples 1 and 2 is adopted, the damage to the bonding surface CPf caused by impurities generated from Cu, resin, or solder colliding with the bonding surface CPf becomes so great that the chip CP cannot be bonded to the substrate WT. However, from the evaluation results of Samples 1, 6, 21, and 26, it is found that even when the chip bonding surface activation process according to Comparative Examples 1 and 2 is adopted, if only SiON is exposed on the bonding surface CPf of the chip CP, the chip CP can be bonded to the substrate WT.

[0060] On the other hand, from the evaluation results of Samples 11 to 20 and 31 to 40 in Tables 2 and 3, it can be seen that when the chip bonding surface activation process according to Comparative Example 3 and the embodiment is adopted, even if Cu, resin, or solder is exposed on the bonding surface CPf of the chip CP, the chip CP can be bonded to the substrate WT. This is because, when the bonding surface CPf of the chip CP is activated by irradiating the bonding surface CPf of the chip CP with a particle beam, no high-frequency bias is applied to the chip CP, so that damage to the bonding surface CPf caused by impurities generated from Cu, resin, or solder colliding with the bonding surface CPf is suppressed. From this, it can be said that, when Cu, resin, or solder is exposed on the bonding surface CPf of the chip CP, it is important to adopt a method of activating the bonding surface CPf of the chip CP by irradiating a particle beam in the chip bonding surface activation process in order to realize good bonding of the chip CP to the substrate WT.

[0061] Furthermore, when the bonding strength of the samples 21 to 30 is compared with that of the samples 31 to 40, it is found that the bonding strength of the samples 21 to 30 is higher than that of the samples 31 to 40. From this, it is found that the gas introduced into the discharge chamber 612 of the particle beam source 61 when irradiating the particle beam to the bonding surface CPf of the chip CP is preferably nitrogen gas rather than Ar gas from the viewpoint of improving the bonding strength between the chip CP and the substrate WT. The reason why the bonding strength between the chip CP and the substrate WT is improved in this way when nitrogen gas is used compared to when Ar gas is used is considered to be that Ar has a larger mass than nitrogen, so even if OH groups are generated on the bonding surface CPf of the chip CP, they are blown away by the collision of Ar. Furthermore, when the bonding strength of the samples 21 to 25 is compared with that of the samples 26 to 30, it is found that the bonding strength of the samples 21 to 25 is higher than that of the samples 26 to 30. From this, it is found that it is preferable to irradiate the bonding surface CPf of the chip CP with a particle beam and then irradiate the bonding surface CPf with nitrogen radicals in terms of improving the bonding strength between the chip CP and the substrate WT.

[0062] In addition, in each of the above-mentioned documents 1 to 4, 6 to 9, 11 to 14, 16 to 19, 21 to 24, 25 to 29, 31 to 34, and 35 to 39, the oxide SiON was replaced with the oxide SiO2 and the nitride SiN, and the same results were obtained. In addition, when oxygen gas was used instead of nitrogen gas, if metals such as Cu or solder exist on the bonding surface CPf of the chip CP, they were oxidized by oxygen, and the connection resistance between the chip CP and the substrate WT was deteriorated. Similarly, even when the bonding surface CPf of the chip CP was plasma-treated instead of irradiating the bonding surface CPf of the chip CP with a particle beam using the particle beam source 61 as described above, the best results were obtained when nitrogen gas was used. In other words, it is considered that the use of nitrogen gas can most effectively generate OH groups on the bonding surface CPf of the chip CP without oxidizing metals such as Cu or solder even if they exist on the bonding surface CPf of the chip CP.

[0063] As described above, according to the chip bonding system 1 of the present embodiment, in the activation processing device 60, the support unit 62 holds the one side of the sheet TE to which the chip CP is attached in a position facing the particle beam source 61. Then, the particle beam source 61 irradiates a particle beam toward the bonding surface CPf of the chip CP in a state where the chip CP is attached to the sheet TE. That is, the bonding surface CPf of the chip CP attached to the sheet TE is activated by irradiating the particle beam to the bonding surface CPf of the chip CP. This suppresses the collision of impurities generated from the sheet TE or the chip CP by the irradiation of the particle beam with the bonding surface CPf of the chip CP, and suppresses damage to the bonding surface CPf of the chip CP caused by the collision of the impurities. Therefore, the occurrence of bonding failure between the chip CP and the substrate WT is suppressed.

[0064] In addition, in the chip bonding system 1 according to the present embodiment, the chip CP to be bonded to the substrate WT may be a chip CP having a bonding surface CPf on which a plurality of regions made of different materials are formed. In this case, the particle beam irradiation suppresses the collision of impurities generated from each of the plurality of regions on the bonding surface CPf of the chip CP with the bonding surface CPf of the chip CP, thereby suppressing damage to the bonding surface CPf of the chip CP caused by the collision of the impurities.

[0065] In the chip bonding system 1 according to the present embodiment, the particle beam source 61 is set so that the incident angle θ1 of the particle beam with respect to the virtual plane S1 including at least one of the bonding surfaces CPf of the plurality of chips CP attached to the sheet TE is 30 degrees or more and 80 degrees or less. This prevents the particle beam from being irradiated onto the sheet TE through the gaps between the adjacent chips CP, thereby suppressing the generation of impurities from the sheet TE.

[0066] Furthermore, the activation processing device 60 according to this embodiment has a cover 622 that covers a portion of the sheet TE except for the portion to which the chips CP are attached on the one side of the sheet TE to which the chips CP are attached, in a state in which the holding frame 112 that holds the sheet TE to which the chips CP are attached is held by the frame holding part 621. This suppresses the generation of impurities from the sheet TE due to irradiation of the particle beam to the portion of the sheet TE except for the portion to which the chips CP are attached.

[0067] In the activation processing apparatus 60 according to the present embodiment, when the bonding surface CPf of the chip CP is irradiated with a particle beam, the support 62 supports the holding frame 112 holding the sheet TE to which the chip CP is attached, with the bonding surface CPf of the chip CP facing vertically downward. Then, the particle beam source 61 irradiates the bonding surface CPf of the chip CP with a particle beam from vertically below the support 62. As a result, impurities generated by irradiating the sheet TE and the chip CP with the particle beam fall vertically downward due to gravity, and thus adhesion of the impurities to the bonding surface CPf of the chip CP is suppressed.

[0068] Furthermore, the particle beam irradiated to the bonding surface CPf of the chip CP by the particle beam source 61 according to the present embodiment contains nitrogen, which makes it possible to increase the bonding strength between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT, as compared with a configuration in which a particle beam containing Ar is irradiated in the chip bonding surface activation step described above, for example.

[0069] Moreover, the activation processing apparatus 60 according to the present embodiment further includes a radical source for irradiating the bonding surface CPf of the chip CP with nitrogen radicals, which makes it possible to increase the bonding strength between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT, as compared with a configuration in which a particle beam containing nitrogen is only irradiated in the chip bonding surface activation step described above.

[0070] However, when the particle beam source 61 is, for example, an ion gun, the particle beam spreads too much and the particle beam is irradiated to the portion in the chamber 64 other than the holding frame 112 holding the sheet TE to which the chip CP is attached. Then, metal contamination is likely to occur from the inner wall of the chamber 64. In particular, when performing hydrophilization processing in the activation processing device 60 as in the present embodiment, it is not good for metal to be mixed in. On the other hand, in the present embodiment, a high-speed particle beam source with high directivity is used as the particle beam source 61. This suppresses the irradiation of the particle beam to the portion in the chamber 64 other than the holding frame 112 holding the sheet TE to which the chip CP is attached. In addition, the particle beam source 61 made of a high-speed particle beam source is effective because it can irradiate only the chip CP by scanning and moving it relatively to the holding frame 112 near the holding frame 112 holding the sheet TE to which the chip CP is attached, thereby shielding the outer periphery of the multiple chips CP attached to the circular area in plan view on the sheet TE1.

[0071] Incidentally, when the particle beam source 61 is a fast atom beam source and the discharge chamber 612 is made of a carbon material, carbon powder is generated from the peripheral wall of the discharge chamber 612. In the chip bonding surface activation step, when the particle beam source 61 is disposed vertically above the chip CP and the particle beam is irradiated from vertically above the chip CP, the carbon powder generated from the peripheral wall of the discharge chamber 612 may fall onto and adhere to the bonding surface CPf of the chip CP. In contrast, according to the present embodiment, the particle beam source 61 is disposed vertically below the multiple chips CP. As a result, the carbon powder generated by the particle beam source 61 is accumulated in the discharge chamber 612 and is prevented from scattering outside the discharge chamber 612, so that adhesion to the bonding surface CPf of the chip CP is suppressed. Therefore, the occurrence of poor bonding of the chip CP to the substrate WT is suppressed.

[0072] Although the embodiment of the present invention has been described above, the present invention is not limited to the above embodiment. For example, the particle beam source 61 of the activation processing device 60 may be an ion beam source that accelerates and emits nitrogen ions.

[0073] In the embodiment, an example of the chip bonding system 1 that bonds the chip CP to the substrate WT has been described, but the present invention is not limited to this, and may be, for example, a substrate bonding system that bonds substrates together. In this case, in the activation processing device 60, a process similar to the activation process described in the embodiment may be performed on the bonding surfaces of each of the substrates to be bonded to each other. For example, when a metal electrode and an insulating film are provided on the bonding surfaces of each of the two substrates, it is preferable to perform the activation process by irradiating a particle beam on the bonding surfaces of the substrates.

[0074] In the embodiment, an example of the activation processing device 60 in which the particle beam source 61 is moved relative to the holding frame 112 that holds the sheet TE to which the chips CP are attached has been described. However, the present invention is not limited to this, and may be configured, for example, such that the particle beam source 61 is fixed and the holding frame 112 that holds the sheet TE to which the chips CP are attached is moved. Alternatively, the particle beam source 61 and the holding frame 112 that holds the sheet TE to which the chips CP are attached may be moved in opposite directions.

[0075] The activation treatment device 60 according to the embodiment may be provided with a water supply unit that supplies water gas into the chamber 64. Here, the water supply unit may introduce water vapor into the chamber 64, or may introduce liquid (mist) water into the chamber 64. Also, the water vapor may be generated, for example, by passing nitrogen as a carrier gas through liquid water.

[0076] In the embodiment, an example has been described in which irradiation of a particle beam onto the chip CP and radical processing of the chip CP are performed in one activation processing device 60, but this is not limited to the above, and for example, the irradiation of a particle beam onto the chip CP and the radical processing of the chip CP may be performed in separate devices.

[0077] In the embodiment, an example of the chip bonding system 1 has been described in which the chip bonding surface activation step, i.e., the first activation step and the second activation step, are performed on the chip CP attached to the sheet TE held by the holding frame 112 in the activation processing device 60, and then the holding frame 112 is directly input into the chip supply unit 11 of the chip supply device 10. However, the present invention is not limited to this, and for example, the chip bonding system may include a cleaning device (not shown) that cleans the chip CP while it is attached to the sheet TE held by the holding frame 112, and cleans the chip CP after the chip bonding surface activation step is performed on the chip CP. Here, the cleaning device has, for example, a support unit (not shown) that supports the holding frame 112 that holds the sheet TE to which the chip CP is attached, and a cleaning head (not shown) that discharges water that has been subjected to ultrasonic or megasonic vibrations or a cleaning liquid that reduces the electrode surface to the chip CP attached to the sheet TE held by the holding frame 112. The liquid discharged from the cleaning head is not limited to water and the above-mentioned cleaning liquid, and may be other types of liquid such as organic solvents. The cleaning device first rotates the support part supporting the chip CP while spraying ultrasonically applied water or cleaning liquid by the cleaning head onto the chip CP attached to the sheet TE to clean the entire bonding surface CPf of the chip CP. After that, the cleaning device dries the chip CP and the sheet TE by rotating the support part while stopping the discharge of water or cleaning liquid from the cleaning head. Note that the cleaning device may remove particles attached to the chip CP by spraying an inert gas such as N2 instead of water onto the chip CP.

[0078] Incidentally, as described in the embodiment, when the particle beam source 61 is a fast atom beam source and the discharge chamber 612 is made of a carbon material, carbon powder is generated from the peripheral wall of the discharge chamber 612. Then, in the chip bonding surface activation step, there is a risk that the carbon powder generated from the peripheral wall of the discharge chamber 612 will adhere to the bonding surface CPf of the chip CP. In contrast, according to the present configuration, after the chip bonding surface activation step is performed in the activation processing device 60, the bonding surface CPf of the chip CP is cleaned in the cleaning device, so that the occurrence of bonding defects between the chip CP and the substrate WT is suppressed.

[0079] As a method for cleaning the bonding surface CPf of the chip CP, a method of cleaning the chip CP one by one before bonding the chip CP to the substrate WT by the bonding device 30 is considered. However, in this case, the time required to mount multiple chips CP on the substrate WT increases by the amount of cleaning required for each chip CP. In contrast, according to the present configuration, multiple chips CP attached to the sheet TE can be cleaned at once. Therefore, the time required to mount multiple chips CP on the substrate WT can be shortened.

[0080] In the embodiment, an example was described in which the chip bonding surface activation step involves irradiating the chips CP with a particle beam and performing radical processing on the chips CP in a state where the chips CP are attached to the sheet TE at a distance from each other. However, this is not limited to the above, and for example, after dicing the substrate to be diced that is the base of the chips CP, the bonding surface CPf of the chips CP may be cleaned in the above-mentioned cleaning device in a state where the chips CP are in contact with each other or connected to each other. Here, the chip supply device may have an expander that stretches the sheet TE held by the holding frame 112 to make the chips CP attached to the sheet TE spaced apart from each other. In this case, after the cleaning device cleans the chips CP attached to the sheet TE held by the holding frame 112, the holding frame 112 is inserted as it is into the chip supply device, and the chip supply device stretches the sheet TE held by the holding frame 112 to make the chips CP spaced apart from each other. The chip supplying device may include a drying unit (not shown) that dries the chips CP and the sheet TE after stretching the sheet TE.

[0081] According to this configuration, for example, when a plurality of chips CP are washed with water or a washing liquid, water is prevented from accumulating between the plurality of chips CP.

[0082] Also, the above-mentioned cleaning device may have an inner support part 2119a and a frame support part 2119b, for example, as shown in FIG. 14A. Here, the inner support part 2119a supports the inside of the holding frame 112 in the sheet TE held by the holding frame 112. The frame support part 2119b supports the holding frame 112, and is movable in the -Z direction with respect to the inner support part 2119a, as shown by the arrow AR10 in FIG. 14A. Also, the cleaning device has a frame drive part (not shown) that drives the frame support part 2119b in the Z-axis direction, and a rotation drive part (not shown) that rotates the inner support part 2119a that supports the sheet TE and the frame support part 2119b that supports the holding frame 112 in the thickness direction of the holding frame 112, i.e., around a rotation axis J10 along the Z-axis direction. After the multiple chips CP are washed with water, the frame drive unit moves the frame support portion 2119b relative to the inner support portion 2119a, so that the first portion PA1 on the sheet TE to which the multiple chips CP are attached is spaced apart in the direction of the rotation axis J10 from the second portion PA2 fixed to the holding frame 112.

[0083] The cleaning device further includes an adsorption unit (not shown) that adsorbs the first portion PA1 of the sheet TE to which the chips CP are attached from the side opposite to the chip CP side. Then, as shown in FIG. 14B, the frame driving unit causes the first portion PA1 of the sheet TE to be spaced apart from the second portion PA2 in the direction of the rotation axis J10 of the sheet TE, that is, in the -Z direction. At this time, the adsorption unit adsorbs the chips CP in a state of contact or connected to each other, which are generated by dicing the dicing target substrate that is the base of the chips CP attached to the sheet TE. Then, the frame driving unit moves the frame support unit 2119b in the -Z direction relative to the inner support unit 2119a. This prevents the chips CP attached to the sheet TE in a state of contact or connected to each other from being separated from each other, thereby preventing water from adhering between the chips CP.

[0084] Then, in the cleaning device, as shown in Fig. 14C, the chips CP are cleaned by rotating the inner support part 2119a and the frame support part 2119b while discharging water or cleaning liquid from the cleaning head. After that, the rotation drive part dries the sheet TE and the chips CP by rotating the inner support part 2119a and the frame support part 2119b while the discharge of water or cleaning liquid from the cleaning head is stopped. At this time, the water or cleaning liquid attached to the chips CP is removed by centrifugal force as shown by the arrow AR11 in Fig. 14(C).

[0085] According to this configuration, the first portion PA1 on the sheet TE to which multiple chips CP are attached is positioned at a distance H1 in the direction of the rotation axis J10 away from the second portion PA2 fixed to the holding frame 112, thereby preventing water or cleaning liquid adhering to the chips CP from accumulating without coming into contact with the inside of the holding frame 112 and the sheet TE when the inner support portion 2119a and the frame support portion 2119b are rotated.

[0086] The chip bonding system may also include a cleaning device (not shown) that cleans the chips CP one by one. In this case, the cleaning device may clean a chip CP when the chip CP is supplied from the chip supply device and the chip CP is being transported to the bonding device.

[0087] In addition, as a method for dicing the diced substrate that is the base of the multiple chips CP, it is preferable to adopt a stealth dicing method using laser light in order to suppress the generation of burrs on the ends of the chips CP. This makes it possible to treat the multiple chips CP attached to the sheet TE in a state of contact or connection with each other in the same way as a single diced substrate before dicing.

[0088] Furthermore, a dicing device may be used to process the substrate WC so as to form a groove WCT in a portion corresponding to the portion PAS where stealth dicing has been performed, as shown in FIG. 15A. In this case, a burr may be generated in the corner portion WCC surrounded by a dashed line in FIG. 15A. Therefore, the burr generated in the corner portion WCC is removed by polishing after the groove WCT is formed. Thereafter, as shown in FIG. 15B, the substrate WC is divided into a plurality of chips CP having a step portion CPd. In this way, since the chip CP has the step portion CPd, the chip CP can be transported by holding the surface Cpd1 or the first corner portion CPC1 on the -Z direction side of the step portion CPd. Therefore, the chip CP can be transported without touching the bonding surface CPf and the second corner portion CPC2 of the chip CP.

[0089] Also, the chip bonding system according to the above-mentioned modified example may further include a separation device (not shown) that performs a separation step of separating the multiple chips CP from one another by stretching the sheet TE held by the holding frame 112 that holds the sheet TE to which the multiple chips CP are attached. Also, in this separation device, the sheet TE in the stretched state may be held again by a ring-shaped sheet holding frame (not shown), and the sheet holding frame holding the sheet TE may be supplied to a bonding device.

[0090] However, when mounting multiple types of chips CP on one substrate WT, for example, it is necessary to loosen the stretched sheet TE and take it out of the chip supply device when changing the chip CP to be put into the chip supply device. Therefore, when loosening the stretched sheet TE, adjacent chips CP attached to the sheet TE may collide with each other and be damaged, which may result in the generation of burrs or particles.

[0091] In contrast, according to the present configuration, the multiple chips CP attached to the sheet TE can be maintained in a spaced-apart state. This makes it possible to store multiple types of chips CP in a state where each is attached to the sheet TE. Therefore, for example, when mounting multiple types of chips CP on one substrate WT, the chips CP can be mounted on the substrate WT while appropriately replacing the sheet holding frame that holds the sheet TE, and the generation of burrs or particles on the chips CP is suppressed.

[0092] In the embodiment, the chip CP may have a step portion CPd on the periphery of the joining surface CPf side as shown in FIG. 16A. In this case, the chip transport device 39 may have a chip holding portion 3393 having a suction portion 3393a as shown in FIG. 16A at the tip of the arm 394 described above. The chip holding portion 3393 is a collet chuck that holds the chip CP by sucking the chip CP with the suction portion 3393a while a part of the chip CP is in contact with the part of the step portion CPd of the chip CP opposite to the joining surface CPf side, i.e., the corner portion CPP1. Note that the "part of the step portion CPd of the chip CP opposite to the joining surface CPf side" includes not only the corner portion CPP1 but also the step portion CPd or the outermost peripheral side of the chip CP. In other words, the chip holding portion 3393 holds the part of the step portion CPd of the chip CP opposite to the joining surface CPf side, i.e., the corner portion CPP1. Then, the chip transport device 39 executes a chip transport step (second bonded object transport step) in which the chip holding part 3393 holds the part CPP1 of the step part CPd of the chip CP on the opposite side to the bonding surface CPf side and transports the chip CP from the chip supply device 10 to the bonding device 30. As shown in FIG. 16B, the chip holding part 4393 may be a collet chuck having an inclined surface 4393b. In FIG. 16B, the same components as those shown in FIG. 16A are given the same reference numerals. In this case, when the chip CP is held by the chip holding part 4393, the first corner part CPC1 of the chip CP is held in contact with the inclined surface 4393b, so that the position of the chip CP is corrected. This is preferable because when the chip CP is held by the chip holding part 4393, the chip holding part 4393 is less likely to come into contact with the bonding surface CPf or the second corner part CPC2 of the chip CP due to a positional deviation of the chip CP. The chip holding part may be configured to clamp the second corner part CPC2 or the outermost side surface of the chip CP and transport it. Furthermore, the chip holding part may have a so-called stepped tool that can suck and hold the chip CP in a state where it comes into contact with the step part CPd of the chip CP but does not come into contact with the second corner part CPC2 and the bonding surface CPf of the chip CP.

[0093] In the chip bonding system described in the embodiment, before the bonding process of bonding the chip CP to the substrate WT, the chip CP is transported one by one to the head 33 and bonded thereto. In this case, if a chip holding part (not shown) for holding the chip CP from its bonding surface CPf is provided at the tip of the arm 394 described above, particles or burrs may be generated when the chip holding part contacts the bonding surface CPf of the chip CP or a corner part of the chip CP, and voids may be generated at the interface between the chip CP and the substrate WT when the chip CP is bonded to the substrate WT. In addition, if the chip holding part contacts the bonding surface CPf of the chip CP that has been activated, the condition of the bonding surface CPf may deteriorate, and a bonding failure may occur between the chip CP and the substrate WT. For example, in a method of bonding the chip CP to the substrate WT by melting the solder provided on the chip CP, particles attached to the bonding surface CPf of the chip CP are taken into the solder, and therefore do not significantly affect the bonding condition between the chip CP and the substrate WT. However, in a method of bonding the chip CP to the substrate WT after performing an activation process on the bonding surface CPf of the chip CP, the bonding surface CPf and the mounting surface WTf are bonded in a solid state, so that particles attached to the bonding surface CPf of the chip CP or burrs generated at the corners of the chip CP can have a significant effect on the bonding condition between the chip CP and the substrate WT. In contrast, according to the present configuration, a step portion CPd is provided on the peripheral portion on the bonding surface CPf side of the chip CP, so that the chip CP can be transported without touching the bonding surface CPf of the chip CP. This suppresses the generation of particles or burrs on the bonding surface CPf and corners of the chip CP and maintains the bonding surface CPf in a good condition, thereby suppressing the occurrence of bonding defects between the chip CP and the substrate WT.

[0094] Furthermore, this configuration is not limited to the case where the activation treatment method for the bonding surface CPf of the chip CP is the above-mentioned method of irradiating a particle beam, but is also effective in the case where the activation treatment method is, for example, a method of activating the bonding surface CPf of the chip CP by performing a plasma treatment on the bonding surface CPf of the chip CP. In the bonding method for bonding the chip CP to the substrate WT by performing an activation treatment on the bonding surface CPf of the chip CP, if the chip holder comes into contact with the bonding surface CPf that has been subjected to the activation treatment, a bonding failure between the chip CP and the substrate WT occurs, so that it is particularly important to transport the chip CP without touching the bonding surface CPf of the chip CP as described above in order to bond the chip CP to the substrate WT well.

[0095] In the embodiment, an example has been described in which, after the activation process is performed on the bonding surface CPf of the chip CP, a cleaning process is performed to clean the bonding surface CPf of the chip CP while the chip CP is being transported to the bonding apparatus 30. However, the present invention is not limited to this, and after the activation process is performed on the bonding surface CPf of the chip CP, the bonding surface CPf of the chip CP may be cleaned before the chip CP is transported to the bonding apparatus 30. In this case, it is preferable because particles attached to the bonding surface CPf of the chip CP can be removed before the chip CP is transported to the bonding apparatus 30.

[0096] In the embodiment, an example has been described in which the chips CP are transported one by one to the head 33H of the bonding device 30 and the chips CP are bonded to the substrate WT. However, the present invention is not limited to this. For example, after the above-mentioned separation process, the chips CP may be transported to the bonding device 30 in a state where they are attached to the sheet TE, and the chips CP may be directly bonded to the substrate WT. As shown in FIG. 17A, for example, the bonding device may have a stage 315 which is a substrate support part for holding the substrate WT, a frame support part 3331 which supports the holding frame 112 which holds the sheet TE to which the plurality of chips CPs are attached, a head 3033H which presses the chips CP toward the stage 315 side from the side opposite to the chip CP side on the sheet TE, a head drive part 3036 which drives the head 3033H, and an elevation mechanism (not shown) which elevates the frame support part 3331 and the head drive part 3036. In FIG. 17A, the same components as those in the embodiment are denoted by the same reference numerals as those in FIG. 2.

[0097] The bonding apparatus also includes a support driving unit (not shown) that drives the stage 315 and the frame supporting unit 3331, an imaging unit (not shown) that images the first alignment mark and the second alignment mark from at least one of the side of the chip CP opposite to the substrate WT side and the side of the substrate WT opposite to the chip CP side, and a control unit (not shown) that controls the support driving unit and the imaging unit. Also, it is assumed that the substrate WT is provided with a first alignment mark (not shown), and the chip CP is provided with a second alignment mark (not shown). In this case, the control unit controls the imaging unit to image the first alignment mark and the second alignment mark, and calculates the amount of misalignment of the chip CP with respect to the substrate WT based on the captured image. Thereafter, the control unit controls the support driving unit to relatively move the frame supporting unit 331 or the stage 315 in a direction that reduces the amount of misalignment of the chip CP with respect to the substrate WT. That is, this chip bonding system executes an imaging step of imaging the first alignment mark and the second alignment mark from at least one of the side of the substrate WT opposite to the chip CP side and the side of the substrate WT opposite to the chip CP side by the imaging unit, a misalignment amount calculation step of calculating the misalignment amount of the chip CP relative to the substrate WT based on the captured image captured in the imaging step, and a moving step of moving the frame support unit 3331 or the stage 315 in a direction to reduce the misalignment amount of the chip CP relative to the substrate WT. Here, the imaging unit may be a so-called two-view camera, and may be configured to image the alignment marks provided on the chip CP and the substrate WT while being inserted between the chip CP and the substrate WT. Alternatively, the imaging unit may be a so-called infrared camera, and may image the alignment marks using infrared light from the side opposite to the mounting surface WTf side of the substrate WT or the side opposite to the bonding surface CPf side of the chip CP. Incidentally, when the imaging unit is a two-view camera, particles get mixed between the chip CP and the substrate WT.In contrast, if the imaging unit is configured to image the alignment mark using the aforementioned infrared light, there is no need to place the imaging unit between the chip CP and the substrate WT, which is preferable because it suppresses the intrusion of particles between the chip CP and the substrate WT and can suppress adhesion of particles to the chip CP or the substrate WT.

[0098] The bonding device may image the alignment marks while moving one imaging unit, or may image two sets of alignment marks, each set consisting of an alignment mark provided on the substrate WT and an alignment mark provided on the chip CP, by two imaging units, and calculate the positional deviation of the chip CP and the attitude deviation of the chip CP in the rotational direction. Furthermore, when the bonding device pushes up the chip CP with the head 3033H, it is preferable to adsorb the chip CP from the opposite side of the chip CP side of the sheet TE so that the chip CP adjacent to the chip CP does not follow and push up. Furthermore, if the sheet TE is contracted again after the sheet TE is stretched to separate the chip CP, the adjacent chips CP come into contact with each other, causing particles to be generated from the chip CP or burrs to be generated at the corners of the chip CP. Therefore, after the above-mentioned separation process, it is preferable to bond the chip CP to the substrate WT in a state in which the sheet TE is stretched. Furthermore, when bonding the chip CP to the substrate WT, it is preferable to press the center of the chip CP toward the substrate WT, thereby contacting the substrate WT from the center of the chip CP. This allows bonding of the chip CP to the substrate WT to proceed from the center thereof, thereby preventing the occurrence of voids due to air being trapped between the chip CP and the substrate WT.

[0099] Here, the frame support section 3331 , the head 3033 H and the head driving section 3036 are disposed vertically below the stage 315 .

[0100] In this bonding apparatus, first, as shown in FIG. 17A, the holding frame 112 is arranged in a position in which the surface of the sheet TE on the chip CP side faces vertically upward. Next, the lifting mechanism raises the frame support part 3331 and the head driving part 3036 to approach the stage 315 as shown by the arrows AR302 and AR303 in FIG. 17B, so that the distance between the sheet TE and the mounting surface WTf of the substrate WT becomes a preset reference distance. In this state, as shown in FIG. 17C, the head driving part 3036 drives the head 3033H in a direction approaching the stage 315 to bond the chip CP to the substrate WT. That is, the bonding apparatus bonds the chip CP to the substrate WT by moving the head 3033H in a direction approaching the substrate WT in a state in which the head 3033H is in contact with the side of the sheet TE opposite to the side of the chips CP on which the chips CP are attached.

[0101] The sheet TE may be coated with an adhesive whose adhesive strength decreases when the side of the sheet TE to which the chips CP are attached is irradiated with ultraviolet light. In this case, the bonding device may have an ultraviolet light irradiation unit that can locally irradiate ultraviolet light only to the portion of the sheet TE corresponding to the chips CP in contact with the substrate WT. In this case, the bonding device may have a head 3033H made of a transparent material, and the head 3033H is brought into contact with the side of the sheet TE opposite to the chip CP side, and the head 3033H is moved in a direction approaching the substrate WT to bring the chips CP into contact with the substrate WT, and ultraviolet light is irradiated onto the sheet TE by the ultraviolet light irradiation unit via the head 3033H. The sheet TE is not limited to the one coated with an adhesive whose adhesive strength decreases when irradiated with ultraviolet light, and may be coated with an adhesive whose adhesive strength decreases when heated or by other methods, for example.

[0102] According to this configuration, the process of picking up the chip CP from the sheet TE and transferring it to the head 33H, as in the chip mounting system 1 according to the embodiment, is not required, so the process required for mounting the chip CP on the substrate WT can be reduced. Also, according to this configuration, the process of transporting the chip CP one by one can be omitted, so that deterioration of the bonding surface CPf or generation of particles due to contact of the chip holding part with the bonding surface CPf of the chip CP when transporting the chip CP one by one, or generation of burrs due to contact of the chip holding part with the corner part of the chip CP, can be suppressed, and poor bonding between the chip CP and the substrate WT can be suppressed.

[0103] In addition, after performing the activation process on the bonding surface CPf of the chip CP, a bonding process of bonding the chip CP to the substrate WT may be performed. Alternatively, after performing the activation process on the bonding surface CPf of the chip CP and before the bonding process of bonding the chip CP to the substrate WT, a cleaning process of cleaning the bonding surface CPf of the chip CP may be performed. In this case, it is preferable because particles attached to the bonding surface CPf of the chip CP can be removed before bonding the chip CP to the substrate WT.

[0104] Incidentally, when the sheet TE is stretched and separated into a plurality of chips CP, particles generated from the chips CP often remain on the sheet TE. For this reason, for example, when attempting to bond the chips CP from vertically above the substrate WT, the particles on the sheet TE may rain down on the substrate WT, which may cause bonding defects between the chips CP and the substrate WT. In contrast, according to the present configuration, the chips CP are bonded by approaching the substrate WT from vertically below, which suppresses bonding defects between the chips CP and the substrate WT caused by particles on the sheet TE.

[0105] In addition, this configuration is suitable for so-called hybrid bonding, in which a flat bonding surface CPf formed by CMP polishing a Cu electrode and an insulating film is activated by plasma treatment or particle beam irradiation, and then water molecules are attached to the bonding surface CPf to make it hydrophilic, and then the chip CP is bonded to the substrate WT.

[0106] In the embodiment, an example of a chip bonding system including the cleaning device 85 has been described, but the present invention is not limited to this, and the cleaning device 85 may not be included.

[0107] The present invention allows various embodiments and modifications without departing from the broad spirit and scope of the present invention. The above-described embodiments are for the purpose of explaining the present invention and do not limit the scope of the present invention. In other words, the scope of the present invention is indicated by the claims, not the embodiments. Various modifications made within the scope of the claims and within the scope of the meaning of the invention equivalent thereto are considered to be within the scope of the present invention.

[0108] This application is based on Japanese Patent Application No. 2018-162738 filed on August 31, 2018, and Japanese Patent Application No. 2018-205227 filed on October 31, 2018. The entire specifications, claims and drawings of Japanese Patent Application No. 2018-162738 and Japanese Patent Application No. 2018-205227 are incorporated herein by reference. [Industrial Applicability]

[0109] The present invention is suitable for the manufacture of, for example, CMOS image sensors, memories, computing elements, and MEMS. [Explanation of symbols]

[0110] 1: chip bonding system, 10: chip supply device, 11: chip supply unit, 30: bonding device, 31: stage unit, 33: bonding unit, 33H, 3033H: head, 36, 3036: head drive unit, 39: chip transport device, 60: activation processing device, 61: particle beam source, 62: support unit, 63: beam source transport unit, 64: chamber, 64a: hole, 70: transport device, 71: transport robot, 80: loading / unloading unit, 85: cleaning device, 90: control unit, 111: pickup mechanism, 111a: needle, 112: holding frame, 113: holding frame drive unit, 114, 622: cover, 114a: through hole, 119, 621: frame holding unit, 315: stage, 320, 853: stage drive unit, 391: plate, 392: plate drive unit, 393: chip holding unit, 394: arm, 395: arm drive unit, 411: tip tool, 411a, 411b: through hole, 413: head main body unit, 432a: tip support unit, 432b: support drive unit, 611: electrode, 612: discharge chamber, 612a: FAB radiation port, 613: beam source drive unit, 614, 677: gas supply unit, 623: frame holder drive unit, 631: support rod, 632: support body, 633: support body drive unit, 634: bellows, 672: magnetron, 673: waveguide, 674: glass window, 675: plasma chamber, 676: supply tube, 851: cleaning head, 852: stage, 2119a: inner support, 2119b: frame support, CP: chip, CPA1, CPA9: impurities, CPf: bonding surface, TE: sheet, OB1: trajectory, PLM9: sheath region, WT: substrate, WTf: mounting surface

Claims

1. A joining system for joining a first object to a second object, comprising: an activation treatment device including a particle beam source for irradiating a bonding surface of the second object with a particle beam to activate the bonding surface of the second object, and a radical source for irradiating the bonding surface of the second object with radicals to activate the bonding surface of the second object, the activation treatment being performed on the bonding surface of the second object with the particle beam irradiated from the particle beam source, and then performing an activation treatment on the bonding surface of the second object with the radicals irradiated from the radical source; a bonding device that bonds the second workpiece to the first workpiece by bringing the second workpiece, the bonding surface of which has been activated by the activation treatment device, into contact with the first workpiece, the activation treatment device arranges the second object to be bonded in a position in which a bonding surface of the second object faces vertically downward, irradiates the particle beam from the particle beam source arranged vertically below the second object to the bonding surface of the second object, thereafter inverts the second object to a position in which the bonding surface of the second object faces vertically upward, and then irradiates the radicals from the radical source arranged vertically above the second object to the bonding surface of the second object. Joining system.

2. The second object to be bonded has an electrode and an insulating film provided on the bonding surface, The insulating film is formed of an oxide, an oxynitride, or a nitride. The joint system of claim 1 .

3. A joining system for joining a first object to a second object, comprising: an activation treatment device including a particle beam source for irradiating a bonding surface of the second object with a particle beam to activate the bonding surface of the second object, and a radical source for irradiating the bonding surface of the second object with radicals to activate the bonding surface of the second object, the activation treatment being performed on the bonding surface of the second object with the particle beam irradiated from the particle beam source, and then performing an activation treatment on the bonding surface of the second object with the radicals irradiated from the radical source; a bonding device that bonds the second workpiece to the first workpiece by bringing the second workpiece, the bonding surface of which has been activated by the activation treatment device, into contact with the first workpiece, The activation treatment device further includes an object support unit that supports an object including at least the second object to be bonded, the particle beam source irradiates a particle beam onto a portion of the target object, the portion including the bonding surface of the second object, which is made of a plurality of types of materials, thereby activating the bonding surface of the second object; the radical source irradiates radicals onto a portion of the target object, the portion including the bonding surface of the second object, which is made of a plurality of types of materials, thereby activating the bonding surface of the second object; the object support section includes a holding frame formed of a resin and holding a sheet to which at least one second object to be bonded is attached, and a support section supporting the holding frame in a position in which one surface side of the sheet to which at least one second object to be bonded is attached faces the particle beam source side, and supports the object in a position in which a portion of the object formed of a plurality of types of materials including the bonding surface of the second object to be bonded is exposed to the particle beam source side or the radical source side; The first object to be bonded is a substrate, the second object to be bonded is a chip, The particle beam source irradiates a particle beam toward the joining surface of each of the at least one second objects attached to the sheet, The activation treatment device further includes a cover that covers a portion of the sheet, except for a portion on the one surface side to which the at least one second object is attached, when the holding frame is supported by the support portion. Joining system.

4. A bonding system for bonding a second workpiece to a first workpiece, the second workpiece having a bonding surface on which a plurality of types of regions made of different materials are formed within the same surface, an activation processing device including an object support unit for supporting an object including at least the second object to be bonded, and a particle beam source for irradiating the object with a nitrogen particle beam to activate a bonding surface of the second object to be bonded, the activation processing device performing an activation process on the bonding surface of the second object to be bonded by the nitrogen particle beam irradiated from the particle beam source; a bonding device which hydrophilically bonds the second object to the first object by bringing the plurality of types of regions on the bonding surface of the second object, the bonding surface of which has been activated by the activation treatment device, into surface contact with the bonding surface of the first object, the object support section includes a holding frame formed of resin and holding a sheet to which at least one second object is attached, and a support section supporting the holding frame in a position in which one surface side of the sheet to which at least one second object is attached faces the particle beam source side, and supports the object in a position in which a portion of the object formed of a plurality of types of materials including the bonding surface of the second object is exposed to the particle beam source side; The first object to be bonded is a substrate, the second object to be bonded is a chip, The particle beam source irradiates a particle beam toward the joining surface of each of the at least one second objects attached to the sheet, The activation treatment device further includes a cover that covers a portion of the sheet, except for a portion on the one surface side to which the at least one second object is attached, when the holding frame is supported by the support portion. Joining system.

5. The activation treatment device activates bonding surfaces of the second objects in a state of being in contact with or connected to each other immediately after the dicing substrate that is the basis of the second objects is diced. The joint system according to any one of claims 1 to 4.

6. Further comprising a cleaning device for cleaning at least one of the second objects. The joint system according to any one of claims 1 to 5.

7. the cleaning device cleans at least one of the second objects while a sheet to which the at least one second object is attached is held by a holding frame; The joint system of claim 6.

8. The second object to be bonded is present in plurality, The second objects to be bonded are generated by dicing a dicing substrate that serves as a base for the second objects to be bonded, The cleaning device cleans the second objects in a state of being in contact with or connected to each other immediately after the dicing substrate is diced, The sheet holding frame holds the sheet to which the second objects are attached, and the sheet holding frame holds the sheet to which the second objects are attached, thereby separating the second objects from each other. The joint system of claim 7.

9. the activation treatment device moves at least one of the particle beam source and an object including at least the second object to be bonded relatively to the other. The joint system according to any one of claims 1 to 8.

10. The particle beam source is a fast atom beam source. The joint system according to any one of claims 1 to 9.

11. At least one of the second objects to be bonded is a chip having a step portion on a periphery of the bonding surface side, a second object supply device that supplies at least one second object to be bonded; a second object transport device that transports at least one second object supplied from the second object supply device to the bonding device, the second object transport device has a second object holding part that holds a part of the step part of at least one of the second objects on the opposite side to the joining surface side, The joint system according to any one of claims 1 to 10.

12. The second object to be bonded is present in plurality, The joining device includes: A substrate support part that holds the first object to be bonded; A frame support portion that supports a holding frame that holds a sheet to which a plurality of the second objects are attached; a head that comes into contact with a side of the sheet opposite to a side of the second objects to be welded; and a head driving unit that drives the head in a direction approaching the substrate support unit to bond at least one of the second objects to the first object. The joint system according to any one of claims 1 to 11.

13. A method for joining a first object to a second object, comprising the steps of: a first activation step of irradiating at least a bonding surface of the second object with a particle beam to activate the bonding surface of the second object; a second activation step of irradiating the bonding surface of the second object with radicals after the first activation step; a bonding step of bonding the second object to be bonded to the first object by bringing the second object to be bonded, the bonding surface of which has been activated, into contact with the first object to be bonded, In the first activation step, the second object to be bonded is disposed in a position in which a bonding surface of the second object to be bonded faces vertically downward, and the particle beam is irradiated onto the bonding surface of the second object to be bonded from vertically downward; After the first activation step, the second object to be bonded is inverted so that the bonding surface of the second object to be bonded faces vertically upward, and then, in the second activation step, the bonding surface of the second object to be bonded is irradiated with the radicals from vertically above. Joining method.

14. The second object to be bonded has an electrode and an insulating film provided on the bonding surface, The insulating film is formed of an oxide, an oxynitride, or a nitride. The bonding method according to claim 13.

15. In the first activation step, bonding surfaces of the plurality of second objects to be bonded that are in contact with or connected to each other immediately after a dicing substrate that is a base for at least one of the second objects to be bonded is diced are activated. The bonding method according to claim 13 or 14.

16. The method further includes a cleaning step of cleaning the bonding surface of at least one of the second objects before the bonding step. The bonding method according to any one of claims 13 to 15.

17. The first object to be bonded is a substrate, the second object to be bonded is a chip, In the cleaning step, the bonding surface of at least one of the second objects to be bonded is cleaned in a state in which the at least one second object to be bonded is attached to a sheet formed of a resin and held by a holding frame. The bonding method according to claim 16.

18. The second object to be bonded is present in plurality, The second objects to be bonded are generated by dicing a dicing substrate that serves as a base for the second objects to be bonded, In the cleaning step, the second objects to be bonded are cleaned in a state in which the second objects to be bonded are in contact with or connected to each other immediately after the dicing substrate is diced; The method further includes a separation step of stretching the sheet held by the holding frame before the joining step, thereby separating the second objects from each other. The bonding method according to claim 17.

19. The second objects to be bonded are chips each having a stepped portion on a periphery on the bonding surface side, a second object to be bonded supply step of supplying at least one second object to be bonded; A second object to be bonded transport step of transporting at least one second object to be bonded that is supplied, In the second object transporting step, the second object is transported while holding a portion of the step portion of at least one of the second objects on an opposite side to the joining surface side by a second object holding part. The bonding method according to any one of claims 13 to 18.

20. The second object to be bonded is present in plurality, In the joining step, a head is brought into contact with a side of the sheet to which the second objects are attached, opposite to the side of the second objects, and the head is moved in a direction approaching the first object, thereby joining at least one of the second objects to the first object. The bonding method according to any one of claims 13 to 19.

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