Stage

Abstract

To improve a withstand voltage (dielectric breakdown voltage) of a component included in a stage to which the spraying is performed by reducing gaps or voids in an insulating film sprayed on the stage by a thermal spraying method.SOLUTION: A stage 122 includes a substrate having a first surface 440 and a second surface 442 adjacent to the first surface, and a first insulating film 141 including a plurality of particles having flat surfaces, in which a portion of the flat surface is arranged along the first surface and the second surface, the substrate includes a third surface 444 in a direction 180 degrees opposite to the first surface, and the insulating film having a portion of the flat surface is arranged along the third surface, the surface extended from the first surface and the surface extended from the second surface intersect at 90 degrees.SELECTED DRAWING: Figure 1A

Description

[Technical field]

[0001] An embodiment of the present invention relates to a stage and a method for manufacturing the stage, for example, to a stage for placing a substrate and a method for manufacturing the stage. [Background technology]

[0002] Semiconductor devices are installed in almost all electronic devices and play an important role in the function of electronic devices. Semiconductor devices are devices that utilize the semiconducting properties of silicon and other materials. Semiconductor devices are constructed by stacking semiconductor films, insulating films, and conductive films on a substrate and patterning these films. These films are stacked using deposition, sputtering, chemical vapor deposition (CVD), or chemical reactions on the substrate, and are patterned by a photolithography process. The photolithography process includes forming a resist on the films to be patterned, exposing the resist to light, forming a resist mask by development, partially removing these films by etching, and removing the resist mask.

[0003] The above-mentioned film characteristics are greatly influenced by the conditions for forming the film or the conditions for patterning. One of the conditions is the voltage applied to a mounting table (hereinafter referred to as a stage) on which a substrate is placed. With the miniaturization of semiconductor devices in recent years, the ratio of the diameter of a hole to be machined to the thickness of a film to be machined has become larger, and therefore, for example, the voltage applied to a stage included in an etching device has increased. As the voltage applied to the stage increases, the members included in the stage are required to have improved withstand voltage. The members included in the stage include, for example, a cooling plate and an electrostatic chuck. Patent Documents 1 and 2 disclose a stage having an insulating film formed on its surface by ceramic spraying, which is one of the spraying methods, and thus has improved withstand voltage. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Patent No. 6027407 [Patent Document 2] Registered Utility Model No. 2600558 Summary of the Invention [Problem to be solved by the invention]

[0005] In conventional thermal spraying methods, the spraying direction is changed for each surface to be sprayed, which results in gaps or voids at the boundaries between the surfaces (hereinafter also referred to as joints or corners). The gaps or voids reduce the withstand voltage of the sprayed insulating film. Therefore, the challenge is to improve the withstand voltage (hereinafter also referred to as the dielectric breakdown voltage) of the members included in the stage to be sprayed by reducing the gaps or voids in the insulating film sprayed by the thermal spraying method on the stage.

[0006] An object of the embodiments of the present invention is to provide a stage having a higher withstand voltage and a method for manufacturing the stage. [Means for solving the problem]

[0007] One embodiment of the present invention is a stage comprising a substrate having a first surface and a second surface adjacent to the first surface, and an insulating film composed of a plurality of particles having flat surfaces, with portions of the flat surfaces being provided along the first surface and the second surface.

[0008] In another embodiment, the substrate may include a third surface that is 180 degrees opposite to the first surface, and the insulating film may have a part of its flat surface provided along the third surface.

[0009] In another embodiment, the surface extended from the first surface and the surface extended from the second surface may be provided to intersect at 90 degrees.

[0010] In another embodiment, the ratio of the area of ​​the voids to a given area of ​​the insulating film may be 5% or less.

[0011] In another embodiment, the substrate may have channels for the flow of liquid.

[0012] In another aspect, the method may include disposing an electrostatic chuck on the insulating film.

[0013] One embodiment of the present invention is a method for manufacturing a stage, comprising spraying an insulator onto a first surface of a substrate from a direction perpendicular to the first surface while moving in a direction parallel to the first surface, and spraying an insulator onto a second surface of the substrate from a direction perpendicular to the second surface while moving in a direction parallel to a second surface of the substrate adjacent to the first surface.

[0014] In another embodiment, the method may include spraying the insulator onto the third surface from a direction perpendicular to the third surface while moving in a direction parallel to the third surface of the substrate that is 180 degrees opposite the first surface.

[0015] In another embodiment, the surface extended from the first surface and the surface extended from the second surface may be formed to intersect at 90 degrees.

[0016] In another embodiment, the method may include sequentially spraying an insulator on a first surface and spraying an insulator on a second surface.

[0017] In another embodiment, the method may include alternating between spraying an insulator on a first surface and spraying an insulator on a second surface.

[0018] In another embodiment, the method may include sequentially spraying the third surface with insulation, spraying the second surface with insulation, and spraying the first surface with insulation.

[0019] In another embodiment, the method may include spraying flat surfaces of some of the particles contained in the insulator so as to be aligned along the first surface and the second surface.

[0020] In another embodiment, the method may include spraying the flat surfaces of some of the particles contained in the insulator so as to be aligned with the third surface. [Brief description of the drawings]

[0021] [Figure 1A] 1A and 1B are a perspective view and a cross-sectional view showing a configuration of a stage according to an embodiment of the present invention. [Figure 1B] 1A and 1B are a perspective view and a cross-sectional view showing a configuration of a stage according to an embodiment of the present invention. [Figure 1C] 1A and 1B are a perspective view and a cross-sectional view showing a configuration of a stage according to an embodiment of the present invention. [Figure 2A] 1A to 1C are perspective views showing a method of manufacturing a stage according to an embodiment of the present invention. [Figure 2B] 1A to 1C are perspective views showing a method of manufacturing a stage according to an embodiment of the present invention. [Figure 2C] 1A to 1C are perspective views showing a method of manufacturing a stage according to an embodiment of the present invention. [Figure 3A] 1A to 1C are perspective views showing a method of manufacturing a stage according to an embodiment of the present invention. [Figure 3B] 1A to 1C are perspective views showing a method of manufacturing a stage according to an embodiment of the present invention. [Figure 3C] 1A to 1C are perspective views showing a method of manufacturing a stage according to an embodiment of the present invention. [Figure 4A] FIG. 11 is a cross-sectional view illustrating a part of a corner of a conventional stage. [Figure 4B] FIG. 11 is a cross-sectional view illustrating a part of a corner of a conventional stage. [Figure 4C] FIG. 11 is a cross-sectional view illustrating a part of a corner of a conventional stage. [Figure 5A] 4 is a cross-sectional view showing a part of a corner of a stage according to an embodiment of the present invention. FIG. [Figure 5B] 4 is a cross-sectional view showing a part of a corner of a stage according to an embodiment of the present invention. FIG. [Figure 6A] 4 is a cross-sectional view showing a part of a corner of a stage according to an embodiment of the present invention. FIG. [Figure 6B]4 is a cross-sectional view showing a part of a corner of a stage according to an embodiment of the present invention. FIG. [Figure 7] 1 is an example of an image captured by an electron microscope of a portion of a corner of a stage according to an embodiment of the present invention. [Figure 8A] 1A to 1C are perspective views showing a method of manufacturing a stage according to an embodiment of the present invention. [Figure 8B] 1A to 1C are perspective views showing a method of manufacturing a stage according to an embodiment of the present invention. [Figure 8C] 1A to 1C are perspective views showing a method of manufacturing a stage according to an embodiment of the present invention. [Figure 9] 1 is a schematic cross-sectional view of a film processing apparatus including a stage according to an embodiment of the present invention. [Figure 10A] 1 is an example of an image captured by an electron microscope of a portion of a corner of a stage according to an embodiment of the present invention. [Figure 10B] 1 is an example of an image captured by an electron microscope of a portion of a corner of a stage according to an embodiment of the present invention. [Figure 11] FIG. 4 is a diagram showing the breakdown voltage of a stage according to an embodiment of the present invention. [Figure 12A] 1A and 1B are a perspective view and a cross-sectional view showing a configuration of a stage according to an embodiment of the present invention. [Figure 12B] 1A and 1B are a perspective view and a cross-sectional view showing a configuration of a stage according to an embodiment of the present invention. [Figure 12C] 1A and 1B are a perspective view and a cross-sectional view showing a configuration of a stage according to an embodiment of the present invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0022] Hereinafter, each embodiment of the invention disclosed in this application will be described with reference to the drawings. However, the present invention can be embodied in various forms without departing from the spirit of the invention, and the present invention should not be interpreted as being limited to the description of the embodiments exemplified below.

[0023] In order to clarify the description, the drawings may show the width, thickness, shape, etc. of each part in a schematic manner compared to the actual embodiment, but these are merely examples and do not limit the interpretation of the present invention. In this specification and each drawing, elements having the same functions as those explained in the previous drawings may be given the same reference numerals, and duplicate explanations may be omitted.

[0024] In the present invention, when a single film is processed to form multiple films, these multiple films may have different functions and roles. However, these multiple films originate from a film formed as the same layer in the same process, and have the same layer structure and the same material. Therefore, these multiple films are defined as existing in the same layer.

[0025] In this specification and drawings, when multiple parts of one configuration are to be distinguished from one another, the same reference numerals are used, and further, a hyphen and a natural number are used.

[0026] 1. First embodiment In this embodiment, a stage 122 according to an embodiment of the present invention will be described.

[0027] 1-1. Stage composition 1 shows a cross-sectional view of the stage 122. As shown in FIGS. 1A and 1B, the stage 122 has a support plate 140 and a first insulating film 141.

[0028] The support plate 140 has at least a first surface 440, a second surface 442 adjacent to the first surface 440, and a third surface 444. The support plate 140 also has a first base material 160 and a second base material 162. The first base material 160 has a first surface 440 and a second surface 442, and the second base material 162 has a third surface 444. The first insulating film 141 is provided on the first base material 160 and the second base material 162 by a thermal spraying method. That is, the first insulating film 141 is provided on the first surface 440, the second surface 442, and the third surface 444. The second surface 442 may include all of the second surface 442-1, the second surface 442-2, the second surface 442-3, and the second surface 442-4, or may include a part of them. In one embodiment of the present invention, an example is shown in which first insulating film 141 is provided on the entire third surface 444 , but first insulating film 141 may be provided on only a part of third surface 444 .

[0029] Here, the surface obtained by extending the first surface 440 and the surface obtained by extending the second surface 442-1 are formed to intersect at 90 degrees or approximately 90 degrees. The surface obtained by extending the second surface 442-1 and the surface obtained by extending the second surface 442-2 are formed to intersect at 90 degrees or approximately 90 degrees. The surface obtained by extending the second surface 442-2 and the surface obtained by extending the second surface 442-3 are formed to intersect at 90 degrees or approximately 90 degrees. The surface obtained by extending the second surface 442-3 and the surface obtained by extending the second surface 442-4 are formed to intersect at 90 degrees or approximately 90 degrees. The surface obtained by extending the second surface 442-4 and the surface obtained by extending the third surface 444 are formed to intersect at 90 degrees or approximately 90 degrees. Moreover, the first surface 440 and the third surface 444 are provided in opposite directions at an angle of 180 degrees or approximately 180 degrees.

[0030] The main material of the first base material 160 and the second base material 162 is a metal or ceramic, and for example, titanium (Ti), aluminum (Al), stainless steel, or an oxide containing these can be used. The support plate 140 may be provided with an opening 142 for installing a temperature sensor on the bottom surface. A thermocouple or the like can be used as the temperature sensor. Note that, in one embodiment of the present invention, an example is shown in which the first insulating film 141 is provided on the inner wall of the opening 142, but the first insulating film 141 may be provided on a part of the inner wall of the opening 142.

[0031] A groove (flow path) 146 for circulating a medium for controlling the temperature of the substrate may be provided inside the support plate 140 of the stage 122. The medium may be a liquid medium such as water, alcohol such as isopropanol or ethylene glycol, or silicone oil. The groove 146 is formed in one or both of the first base material 160 and the second base material 162, and then the first base material 160 and the second base material 162 are joined by brazing or the like. The medium may be used either when cooling or when heating the stage 122.

[0032] The temperature of the support plate 140 can be controlled by flowing a medium, the temperature of which is controlled by a temperature controller 228 illustrated in FIG. 9, which will be described later, through the grooves 146 .

[0033] The first insulating film 141 may be made of any known material as long as it satisfies the desired withstand voltage and can be sprayed by a thermal spraying method. For example, the material used for the first insulating film 141 may be one or more oxides of alkaline earth metals, rare earth metals, aluminum (Al), tantalum (Ta), and silicon (Si). Specifically, aluminum oxide (Al2 O3), magnesium oxide (MgO), etc.

[0034] The material used for the first insulating film 141 may include an inorganic insulator. Specific examples of the inorganic insulator include aluminum oxide, titanium oxide, chromium oxide, zirconium oxide, magnesium oxide, yttrium oxide, and composite oxides of these.

[0035] The thermal spraying method used in this specification and the like may be, for example, a localoid thermal spraying method, a plasma thermal spraying method, or a combination of these.

[0036] As an optional configuration, the stage 122 may have one or more through holes 144 penetrating the support plate 140. A helium introduction pipe may be provided in the chamber 202 illustrated in FIG. 9 described later so that a gas with high thermal conductivity such as helium flows through the through holes 144. This allows the gas to flow through the gap between the stage 122 and the substrate, and the thermal energy of the stage 122 can be efficiently transferred to the substrate. Note that, in one embodiment of the present invention, an example is shown in which the first insulating film 141 is provided on the inner wall of the through hole 144, but the first insulating film 141 may be provided on a part of the inner wall of the through hole 144.

[0037] As shown in FIG. 1C, the stage 122 may further include an electrostatic chuck 170 as a mechanism for fixing the substrate on the stage 122. The electrostatic chuck 170 may have a structure in which an electrostatic chuck electrode 172 is covered with an insulating film 174, for example. By applying a high voltage (several hundred volts to several thousand volts) to the electrostatic chuck electrode 172, the substrate can be fixed by the Coulomb force between the charge generated on the electrostatic chuck electrode 172 and the charge generated on the back surface of the substrate and having the opposite polarity to the charge generated on the electrostatic chuck electrode 172. As the insulator, ceramics such as aluminum oxide, aluminum nitride, and boron nitride can be used. Note that the insulating film 174 does not need to be completely insulating, and it is sufficient if it has a certain degree of conductivity (for example, 10 9 Ω cm to 10 12 In this case, The film 174 is the above-mentioned ceramic doped with a metal oxide such as titanium oxide, zirconium oxide, hafnium oxide, etc. The electrostatic chuck 170 may be provided with ribs 176 on its periphery for determining the position of the substrate.

[0038] 1-2. Preparation of the stage 2 and 3 are cross-sectional views showing a first method for manufacturing the stage 122. Descriptions of configurations that are the same as or similar to those in FIG. 1A, FIG. 1B, or FIG. 1C may be omitted.

[0039] 2 and 3, a first method for producing the stage 122 will be described. First, as shown in FIG. 2A, a support plate 140 is prepared.

[0040] Next, as shown in Fig. 2B, the first insulating film 141 is formed on at least a part of the first surface 440 while moving a thermal sprayer 500 included in the thermal spraying device in a direction parallel to the first surface 440 of the support plate 140. At this time, the thermal sprayer 500 may form the first insulating film 141 on at least a part of the first surface 440 while moving in a zigzag manner, repeatedly moving from the end of the support plate 140 toward the approximate center of the first surface 440 of the support plate 140 and from the approximate center of the support plate 140 toward the end of the support plate 140. Forming the first insulating film 141 on the first surface 440 by the thermal sprayer 500 included in the thermal spraying device may be rephrased as forming the first insulating film 141 on the first surface 440 by a thermal spraying method. At this time, when the direction in which the particles to be sprayed by the thermal sprayer 500 are sprayed onto the first surface 440 is defined as the spraying direction, the spraying direction and the first surface 440 may be substantially perpendicular or perpendicular. Moreover, the movement of the thermal sprayer 500 in a direction parallel to the first surface 440 may be in one direction, or may be in both one direction and a direction opposite by 180 degrees, as shown in FIG. 2B. By forming the first insulating film 141 on the first surface 440 while moving in both one direction and a direction opposite by 180 degrees, the first insulating film 141 can be formed uniformly on the first surface 440.

[0041] Next, as shown in FIG. 2C, the first insulating film 141 is formed on at least a part of the second surface 442 while moving the thermal sprayer 500 in a direction parallel to the second surface 442. At this time, the thermal sprayer 500 may form the first insulating film 141 on at least a part of the second surface 442 while moving in a zigzag manner, repeatedly moving from one end of the second surface 442 (e.g., the first surface 440 side) to the other end of the second surface 442 (e.g., the third surface 444 side) and from the other end of the second surface 442 to one end of the second surface 442. Forming the first insulating film 141 on the second surface 442 by the thermal sprayer 500 included in the thermal spraying device may be rephrased as forming the first insulating film 141 on the second surface 442 by a thermal spraying method. At this time, when the direction in which the particles to be sprayed by the thermal sprayer 500 are sprayed onto the second surface 442 is defined as the spraying direction, the spraying direction and the second surface 442 may be substantially perpendicular or perpendicular. Moreover, the movement of the thermal sprayer 500 in a direction parallel to the second surface 442 may be in one direction, or may be in both one direction and a direction opposite by 180 degrees, as shown in FIG. 2C. By forming the first insulating film 141 on the second surface 442 while moving in both one direction and a direction opposite by 180 degrees, the first insulating film 141 can be formed uniformly on the second surface 442.

[0042] Next, similarly to the method described in Fig. 2B, as shown in Fig. 3A, first insulating film 141 is formed again on first surface 440. Subsequently, similarly to the method described in Fig. 2C, as shown in Fig. 3B, first insulating film 141 is formed again on second surface 442.

[0043] As described above, by forming the first insulating film 141 on each surface, the first insulating film 141 can be provided on the support plate 140 as shown in FIG. 3C. Furthermore, for example, as shown in FIG. 1C, the support plate 140 and the electrostatic chuck 170 can be joined to produce the stage 122. The support plate 140 and the electrostatic chuck 170 can be joined by, for example, welding, screwing, or brazing. Examples of brazing materials used in brazing include alloys containing silver, copper, and zinc, alloys containing copper and zinc, copper containing a trace amount of phosphorus, aluminum and its alloys, alloys containing titanium, copper, and nickel, alloys containing titanium, zirconium, and copper, and alloys containing titanium, zirconium, copper, and nickel.

[0044] As described above with reference to Figures 2A, 2B, 2C, 3A, 3B, 3C, and 1A, by alternately repeating the formation of the first insulating film 141 on the first surface 440 and the formation of the first insulating film 141 on the second surface 442, the first insulating film 141 can be uniformly formed on the first surface 440 and the second surface 442 of the support plate 140. In addition, by alternately repeating the formation of the first insulating film 141 on the first surface 440 and the formation of the first insulating film 141 on the second surface 442, it is possible to suppress the occurrence of gaps or voids at the corners between the first surface 440 and the second surface 442. Note that the first insulating film 141 formed on the first surface 440 and the first insulating film 141 formed on the second surface 442 may be overlapped by alternately repeating the formation of the first insulating film 141 on the first surface 440 and the formation of the first insulating film 141 on the second surface 442. By the first insulating film 141 formed on the first surface 440 and the first insulating film 141 formed on the second surface 442 overlapping, it is possible to suppress the occurrence of a gap or void at the corner portion between the first surface 440 and the second surface 442.

[0045] For example, the first insulating film 141 may be formed uniformly on a circular support plate 140 having an approximate diameter of 30 cm by repeatedly forming the first insulating film 141 on at least a portion of the first surface 440 while moving the thermal sprayer 500 included in the thermal spraying apparatus 1 mm in a direction parallel to the first surface 440, and then forming the first insulating film 141 on at least a portion of the second surface 442 while moving the thermal sprayer 500 included in the thermal spraying apparatus 1 mm in a direction parallel to the second surface 442.

[0046] As an optional forming method, the first insulating film 141 may be formed on at least a portion of the third surface 444 while moving the thermal sprayer 500 in a direction parallel to the third surface 444. Alternatively, the thermal sprayer 500 may form the first insulating film 141 on at least a portion of the third surface 444 while moving in a zigzag pattern, repeatedly moving from the end of the support plate 140 toward the approximate center of the third surface 444 of the support plate 140 and from the approximate center of the support plate 140 toward the end of the support plate 140. At this time, the first insulating film 141 may be formed uniformly on the first surface 440, the second surface 442 and the third surface 444 of the support plate 140 by repeatedly forming the first insulating film 141 on at least a portion of the first surface 440, forming the first insulating film 141 on at least a portion of the second surface 442, and forming the first insulating film 141 on at least a portion of the third surface 444.

[0047] 1-3. Comparison of corners of a support plate of a conventional stage with corners of a support plate 140 of a stage 122 according to an embodiment of the present invention FIG. 4 is a cross-sectional view for explaining a part of a corner of a support plate of a conventional stage. FIGS. 5 and 6 are cross-sectional views showing a part of a corner of a support plate 140 of a stage 122 according to an embodiment of the present invention. FIG. 7 is an example of an image of a part of a corner of a support plate 140 of a stage 122 according to an embodiment of the present invention captured by an electron microscope. Descriptions of configurations that are the same as or similar to those in FIGS. 1 to 3 may be omitted. In the following description, a stage 122 having the configuration shown in FIG. 1B will be used as an example.

[0048] 4A shows an example in which the corner between the first surface 440 and the second surface 442-1 has a C-chamfered shape. FIG. 4B shows an example in which the corner between the second surface 442-2 and the second surface 442-3 has a curvature. FIG. 4C shows an example in which the corner between the second surface 442-4 and the third surface 444 has a curvature. Conventionally, the first insulating film 141 formed at the corner between the first surface 440 and the second surface 442-1, the first insulating film 141 formed at the corner between the second surface 442-2 and the second surface 442-3, and the first insulating film 141 formed at the corner between the second surface 442-4 and the third surface 444 included large gaps or voids 446. In addition, the corner between first surface 440 and second surface 442-1 may have a curvature, the corner between second surface 442-2 and second surface 442-3 may have a C-chamfered shape, and the corner between second surface 442-4 and third surface 444 may have a C-chamfered shape.

[0049] 5B shows an example in which the corners between the first surface 440 and the second surface 442-1 of the support plate 140 of the stage 122 according to one embodiment of the present invention have a C-chamfered shape. As shown in FIG. 5B, the first insulating film 141 formed at the corners between the first surface 440 and the second surface 442-1 does not include large gaps or voids 446 and has a uniform film.

[0050] As shown in FIG. 5A, in the support plate 140 of the stage 122 according to one embodiment of the present invention, the first insulating film 141 formed by the thermal spraying method is composed of a plurality of particles 450 having a flat shape on the first surface 440. The flat surfaces 452 of at least some of the particles 450 are formed by the thermal spraying method so as to be parallel to a surface parallel or approximately parallel to the first surface 440. The particles 450 are sprayed by the thermal spraying machine 500. In addition, a direction 454 perpendicular or approximately perpendicular to the flat surfaces 452 and a direction perpendicular or approximately perpendicular to the first surface 440 are parallel or approximately parallel, and are also parallel or approximately parallel to the spraying direction in which the particles 450 sprayed by the thermal spraying machine 500 are sprayed onto the first surface 440.

[0051] Similarly to the first surface 440, the first insulating film 141 formed by the thermal spraying method on the second surface 442-1 is composed of a plurality of particles 450 having a flat shape, and the flat surfaces 462 of at least some of the particles 450 are formed by the thermal spraying method so as to be parallel to a plane parallel or approximately parallel to the second surface 442-1. The particles sprayed by the thermal spraying machine 500 are the particles 450. Furthermore, a direction 464 perpendicular or approximately perpendicular to the flat surfaces 462 and a direction perpendicular or approximately perpendicular to the second surface 442-1 are parallel or approximately parallel, and are also parallel or approximately parallel to the spraying direction in which the particles 450 sprayed by the thermal spraying machine 500 are sprayed onto the second surface 442-1.

[0052] As with the first surface 440 and the second surface 442-1, the first insulating film 141 formed by the thermal spraying method on the corner surface 443 is composed of a plurality of particles 450 having a flat shape, and the flat surfaces 472 of at least some of the particles 450 are formed by the thermal spraying method so as to be parallel to a surface parallel to the corner surface 443. The particles sprayed by the thermal spraying machine 500 are the particles 450. Furthermore, a direction 474 perpendicular or substantially perpendicular to the flat surfaces 472 and a direction perpendicular or substantially perpendicular to the corner surface 443 are parallel or substantially parallel, and are also parallel or substantially parallel to the spraying direction in which the particles 450 sprayed by the thermal spraying machine 500 are sprayed onto the corner surface 443.

[0053] 6B shows an example in which the corner between the second surface 442-4 and the third surface 444 of the support plate 140 of the stage 122 according to one embodiment of the present invention has a curvature. As shown in FIG. 6B, the first insulating film 141 formed at the corner between the second surface 442-4 and the third surface 444 does not include a large gap or void 446 and has a uniform film.

[0054] As shown in FIG. 6A, in the support plate 140 of the stage 122 according to one embodiment of the present invention, the first insulating film 141 formed by the thermal spraying method is composed of a plurality of particles 450 having a flat shape on the third surface 444 provided in a direction 180 degrees opposite to the first surface 440. The flat surfaces 482 of at least some of the particles 450 are formed by the thermal spraying method so as to be parallel or approximately parallel to the third surface 444. The particles sprayed by the thermal sprayer 500 are the particles 450. In addition, a direction 484 perpendicular or approximately perpendicular to the flat surfaces 482 and a direction perpendicular or approximately perpendicular to the third surface 444 are parallel or approximately parallel, and are also parallel or approximately parallel to the spraying direction in which the particles 450 sprayed by the thermal sprayer 500 are sprayed onto the third surface 444.

[0055] Similar to the third surface 444, the first insulating film 141 formed by the thermal spraying method on the second surface 442-4 is composed of a plurality of flat particles 450. Note that the configuration of the plurality of particles 450 formed on the second surface 442-4 is similar to the configuration of the plurality of particles 450 formed on the second surface 442-1 shown in Fig. 5A, and therefore a description thereof will be omitted here.

[0056] As with the third surface 444 and the second surface 442-4, if one of the tangent planes to each point constituting the corner between the third surface 444 and the second surface 442-4 is taken as surface 491, the first insulating film 141 formed by the thermal spraying method is also composed of a plurality of particles 450 having a flat shape on surface 491, and flat surfaces 492 of at least some of the particles 450 are formed by the thermal spraying method so as to follow a plane parallel or approximately parallel to surface 491. Moreover, the particles sprayed by the thermal sprayer 500 are the particles 450. Furthermore, a direction 494 perpendicular or approximately perpendicular to the flat surfaces 492 and a direction perpendicular or approximately perpendicular to the surface 491 are parallel or approximately parallel, and are also parallel or approximately parallel to the spraying direction in which the particles 450 sprayed by the thermal sprayer 500 are sprayed onto the surface 491 of the corner.

[0057] In FIG. 7, curved surface 491S and curved surface 492S formed by a plurality of particles 450 are shown with approximate guidelines. As shown in FIG. 7, curved surface 491S and curved surface 492S, it can be seen that the tangent planes at each point constituting each curved surface of curved surface 491S and curved surface 492S are parallel or approximately parallel. That is, the direction 494 perpendicular or approximately perpendicular to flat surface 492 and the direction perpendicular or approximately perpendicular to the tangent planes at each point constituting each curved surface of curved surface 491S and curved surface 492S are parallel or approximately parallel, and are also parallel or approximately parallel to the spraying direction in which particles 450 sprayed by spray machine 500 are sprayed to the corners. In addition, in the stage according to one embodiment of the present invention shown in FIG. 7, an example is shown in which aluminum oxide is used as the material of first insulating film 141 and the size of the particles is about 25 μm.

[0058] In a stage 122 according to one embodiment of the present invention, the following steps are alternately repeated: forming a first insulating film 141 on a first surface 440 of a support plate 140 by a thermal spraying method from a direction perpendicular to the first surface 440 while moving the thermal sprayer 500 in a parallel direction to the first surface 440; and forming a first insulating film 141 on a second surface 442 adjacent to the first surface 440 by a thermal spraying method from a direction perpendicular to the second surface 442 while moving the thermal sprayer 500 in a parallel direction to the second surface 442. This allows the flat surfaces of at least some of the particles 450 constituting the first insulating film 141 to be formed parallel or approximately parallel to the first surface 440 and the second surface 442.

[0059] Moreover, the first insulating film 141 formed on the first surface 440 and the first insulating film 141 formed on the second surface 442 are formed so as to overlap each other. As a result, the first insulating film 141 formed on the first surface 440, the second surface 442, and the corners between the first surface 440 and the second surface 442 are uniform films containing almost no gaps or voids. Therefore, the first insulating film 141 is densely formed on the support plate 140, and the dielectric breakdown voltage of the support plate 140 is improved. Therefore, by applying the present invention to the stage and the method for manufacturing the stage, it is possible to provide a stage and a method for manufacturing the stage having a high withstand voltage.

[0060] 2. Second embodiment In this embodiment, a second method for producing the stage 122 according to an embodiment of the present invention will be described. Descriptions of configurations that are the same as or similar to those in the first embodiment may be omitted.

[0061] 8 shows a second method for producing the stage 122 according to an embodiment of the present invention. The second method for producing the stage 122 differs from the first method for producing the stage 122 shown in the first embodiment in that the formation of the first insulating film 141 on the third surface 444, the formation of the first insulating film 141 on the second surface 442, and the formation of the first insulating film 141 on the first surface 440 are performed continuously while moving the thermal spray machine 500 in one direction. In the following description of the second method for producing the stage 122, differences from the first method for producing the stage 122 will be mainly described.

[0062] First, preparation of the support plate 140 is similar to that shown in FIG. 2A in the first embodiment, and therefore will not be described here.

[0063] Next, as shown in FIG. 8A, support plate 140 is rotated about an axis approximately perpendicular to the center of first surface 440 of support plate 140, and a thermal sprayer 500 included in the thermal spraying apparatus is moved in a direction parallel to third surface 444, while forming first insulating film 141 on at least a portion of third surface 444.

[0064] Next, as shown in FIG. 8B, the first insulating film 141 is formed on the second surface 442 by the thermal sprayer 500 while the thermal sprayer 500 is moved continuously and in one direction from a direction parallel to the third surface 444 to a direction parallel to the second surface 442. The first insulating film 141 can be formed on the second surface 442 by the thermal sprayer 500 using a method similar to the first manufacturing method of the stage 122 shown in the first embodiment. The movement of the thermal sprayer 500 is continuous and in one direction, and the first insulating film 141 is formed from the third surface 444 to the second surface 442, so that the first insulating film 141 can be formed uniformly on the third surface 444 and the second surface 442.

[0065] Next, as shown in FIG. 8C, the first insulating film 141 is formed on the first surface 440 by the thermal sprayer 500 while the thermal sprayer 500 is moved continuously and in one direction from a direction parallel to the second surface 442 to a direction parallel to the first surface 440. The first insulating film 141 can be formed on the first surface 440 by the thermal sprayer 500 using a method similar to the first manufacturing method of the stage 122 shown in the first embodiment. The movement of the thermal sprayer 500 is continuous and in one direction, and the first insulating film 141 is formed from the second surface 442 to the first surface 440, so that the first insulating film 141 can be formed uniformly on the second surface 442 and the first surface 440.

[0066] As described above, the first insulating film 141 can be provided on the support plate 140 by forming the first insulating film 141 on each surface. Furthermore, the joining of the support plate 140 and the electrostatic chuck 170 is similar to that shown in FIG. 1A in the first embodiment, and therefore will not be described here. As described above, the stage 122 can be produced by the second production method.

[0067] As described above with reference to Figures 2A, 8A, 8B, 8C, and 1A, the first insulating film 141 is formed on the third surface 444, the first insulating film 141 is formed on the second surface 442, and the first surface 440 continuously while moving in one direction, so that the first insulating film 141 can be formed more uniformly on the third surface 444, the second surface 442, and the first surface 440 of the support plate 140. In addition, it is possible to further suppress the occurrence of gaps or voids at the corners between the third surface 444 and the second surface 442 and the corners between the second surface 442 and the first surface 440. As a result, the first insulating film 141 formed on the third surface 444, the corner between the third surface 444 and the second surface 442, the second surface 442, the corner between the second surface 442 and the first surface 440, and the first surface 440 becomes a uniform film containing almost no gaps or voids. Therefore, the first insulating film 141 is densely formed on the support plate 140, and the dielectric breakdown voltage of the support plate 140 is further improved. Therefore, by applying the present invention to the stage and the method for manufacturing the stage, it is possible to provide a stage and a method for manufacturing the stage having a higher withstand voltage.

[0068] The method for producing the stage according to this embodiment is not limited to the above-mentioned method.

[0069] The method for producing the stage according to this embodiment may be, for example, a method for continuously forming the first insulating film 141 on the first surface 440, forming the first insulating film 141 on the second surface 442, and forming the first insulating film 141 on the third surface 444 while moving in one direction. In the method for continuously forming the first insulating film 141 on the first surface 440, forming the first insulating film 141 on the second surface 442, and forming the first insulating film 141 on the third surface 444 while moving in one direction, the first insulating film 141 is densely formed on the support plate 140, similar to the above-mentioned method for producing the stage, and therefore the breakdown voltage of the support plate 140 is further improved.

[0070] In addition, in the method for producing the stage according to this embodiment, for example, the first thermal spraying may be performed by forming the first insulating film 141 on the third surface 444, and the second thermal spraying may be performed by successively forming the first insulating film 141 on the second surface 442 and the first insulating film 141 on the first surface 440. Furthermore, in the method for producing the stage according to this embodiment, the first thermal spraying and the second thermal spraying may be performed alternately, the first thermal spraying and the second thermal spraying may be performed alternately and repeatedly, the second thermal spraying and the first thermal spraying may be performed alternately and repeatedly, or the second thermal spraying and the first thermal spraying may be performed alternately and repeatedly. By alternately and repeatedly performing the first thermal spraying and the second thermal spraying, the variation in the thickness of the insulating film of the stage is further suppressed. As a result, a stage on which the insulating film is formed more uniformly can be provided.

[0071] In addition, in the method for producing the stage according to this embodiment, the first spraying and the second spraying may be performed alternately, and then the first spraying and the second spraying may be performed continuously, or the first spraying and the second spraying may be performed alternately and then the first spraying and the second spraying may be performed continuously. Similarly, when the second spraying is performed first, the second spraying and the first spraying may be performed alternately, and then the first spraying and the second spraying may be performed continuously, or the second spraying and the first spraying may be performed alternately and then the first spraying and the second spraying may be performed continuously. By performing the first spraying and the second spraying alternately, and then the first spraying and the second spraying continuously, the variation in the thickness of the insulating film of the stage can be further suppressed, and the occurrence of gaps or voids at the corners of the stage can be further suppressed.

[0072] 3. Third embodiment In this embodiment, a film processing apparatus equipped with a stage 122 will be described as an example. Descriptions of configurations that are the same as or similar to those in the first or second embodiment may be omitted.

[0073] 9 shows a cross-sectional view of an etching apparatus 200, which is one of the film processing apparatuses. The etching apparatus 200 can perform dry etching on various films. The etching apparatus 200 has a chamber 202. The chamber 202 provides a space in which etching is performed on a film such as a conductor, an insulator, or a semiconductor formed on a substrate.

[0074] An exhaust device 204 is connected to the chamber 202, which allows the interior of the chamber 202 to be set to a reduced pressure atmosphere. The chamber 202 is further provided with an inlet pipe 206 for introducing a reactive gas, and a reactive gas for etching is introduced into the chamber via a valve 208. Examples of the reactive gas include carbon tetrafluoride (CF4), octafluorocyclobutane (c-C4F8), decafluorocyclopentane (c-C5F 10 ), hexafluorobutadiene (C4F6), and other fluorine-containing organic compounds.

[0075] A microwave source 212 can be provided at the top of the chamber 202 via a waveguide 210. The microwave source 212 has an antenna for supplying microwaves, and outputs high-frequency microwaves such as 2.45 GHz microwaves or 13.56 MHz radio waves (RF). The microwaves generated by the microwave source 212 are propagated to the top of the chamber 202 via the waveguide 210 and introduced into the chamber 202 via a window 214 made of quartz, ceramic, or the like. The reactive gas is converted into plasma by the microwaves, and the etching of the film proceeds due to the electrons, ions, and radicals contained in the plasma.

[0076] A stage 122 according to an embodiment of the present invention is provided at the bottom of the chamber 202 to place a substrate. The substrate is placed on the stage 122. A power source 224 is connected to the stage 122, and a voltage equivalent to high-frequency power is applied to the stage 122, so that an electric field due to microwaves is formed in a direction perpendicular to the surface of the stage 122 and the surface of the substrate. Magnets 216, 218, and 220 can be further provided on the top and sides of the chamber 202. The magnets 216, 218, and 220 may be permanent magnets or electromagnets having electromagnetic coils. The magnets 216, 218, and 220 create a magnetic field component parallel to the stage 122 and the surface of the substrate, and in cooperation with the electric field due to the microwaves, the electrons in the plasma are subjected to the Lorentz force and resonate, and are bound to the stage 122 and the surface of the substrate. As a result, a high-density plasma can be generated on the surface of the substrate.

[0077] For example, if the stage 122 is equipped with a sheathed heater, a heater power supply 230 that controls the sheathed heater is connected. The stage 122 may further be connected, as optional components, to a power supply 226 for an electrostatic chuck that fixes the substrate to the stage 122, a temperature controller 228 that controls the temperature of a medium circulated inside the stage 122, and a rotation control device (not shown) that rotates the stage 122.

[0078] As described above, the etching apparatus 200 uses the stage 122 according to one embodiment of the present invention. By using this stage 122, the substrate can be uniformly heated and the heating temperature can be precisely controlled. Furthermore, by using this stage 122, the dielectric breakdown voltage of the stage can be improved. Furthermore, by using this stage 122, the withstand voltage against the voltage applied to the substrate can be improved. Therefore, by using the etching apparatus 200, it is possible to form a contact having a high aspect ratio or a film having a high aspect ratio. Therefore, by using the etching apparatus 200, it is possible to uniformly etch various films provided on the substrate.

[0079] 4. Fourth embodiment In this embodiment, the ratio of the gap or void 446 at the corner of the stage according to one embodiment of the present invention and the dielectric breakdown voltage of the stage according to one embodiment of the present invention will be described. Descriptions of configurations that are the same as or similar to those of the first to third embodiments may be omitted.

[0080] Fig. 10A shows an example of an image captured by an electron microscope of a part of a corner between third surface 444 and second surface 442 when a stage according to an embodiment of the present invention is formed by the first fabrication method. Fig. 10B shows an example of an image captured by an electron microscope of a part of a corner between third surface 444 and second surface 442 when a stage according to an embodiment of the present invention is formed by the second fabrication method. Fig. 11 is a diagram showing the breakdown voltage of a conventional stage and a stage according to an embodiment of the present invention fabricated by the first fabrication method and by the second fabrication method.

[0081] As shown in FIG. 10A and FIG. 10B, the gap or void 446 is indicated by black dots. FIG. 10A and FIG. 10B do not have a large gap or void 446 like the corner of the conventional stage shown in FIG. 4C. FIG. 10A and FIG. 10B show a region 502 of 200 μm×200 μm. In FIG. 10A, the ratio of the area of ​​the gap or void 446 to the area of ​​the region 502 was 4.33%. Also, in FIG. 10B, the ratio of the area of ​​the gap or void 446 to the area of ​​the region 502 was 0.49%. That is, the ratio of the area of ​​the gap or void 446 to the area of ​​the region 502 of the corner formed by the first and second manufacturing methods is dramatically reduced compared to the conventional method.

[0082] 11, the breakdown voltage of the conventional stage was 3.58 kV, the breakdown voltage of the stage according to one embodiment of the present invention produced by the first production method was 4.60 kV, and the breakdown voltage of the stage produced by the second production method was 10.37 kV. The breakdown voltage of the stage produced by the first production method was 1 kV higher than the breakdown voltage of the conventional stage, and the breakdown voltage of the stage produced by the second production method was about three times higher than the breakdown voltage of the conventional stage.

[0083] 5. Fifth embodiment In this embodiment, a stage 124 according to an embodiment of the present invention will be described. Descriptions of configurations that are the same as or similar to those in the first to fourth embodiments may be omitted.

[0084] 12 shows a cross-sectional view of the stage 124. The configuration of the stage 124 is different from the configuration of the stage 122 shown in the first embodiment in that the stage 124 has a heater layer 150. In the following description of the configuration of the stage 124, differences from the configuration of the stage 122 will be mainly described. Note that the first to fourth embodiments may be implemented by appropriately replacing the stage 122 described in the first to fourth embodiments with the stage 124 described in this embodiment.

[0085] As shown in Figures 12A and 12B, the stage 124 has a support plate 140 on which a heater layer 150 is provided.

[0086] In the stage 124, the temperature of the support plate 140 can be controlled by flowing a medium, the temperature of which is controlled by the temperature controller 228 shown in FIG. 9, through the grooves 146. However, temperature control using a liquid medium has a slow response, and precise temperature control is relatively difficult. Therefore, it is preferable to roughly control the temperature of the support plate 140 using the medium, and precisely control the temperature of the substrate using the heater wires 154 in the heater layer 150. This allows not only precise temperature control, but also rapid temperature adjustment of the stage 124.

[0087] The heater layer 150 mainly has three layers. Specifically, the heater layer 150 has a second insulating film 152, a heater wire 154 on the second insulating film 152, and a third insulating film 156 on the heater wire 154 (FIG. 12B). Only one heater wire 154 may be provided in the heater layer 150, or multiple heater wires 154 may be provided and each may be independently controlled by a heater power supply 230 illustrated in FIG. 9. The heater wire 154 is electrically insulated by the second insulating film 152 and the third insulating film 156. The heater wire 154 is heated by the power supplied from the heater power supply 230, thereby controlling the temperature of the stage 124.

[0088] The second insulating film 152 and the third insulating film 156 may include an inorganic insulator. Since the inorganic insulator is described in the first embodiment, a description thereof will be omitted here. Furthermore, the second insulating film 152 and the third insulating film 156 may be formed by using a thermal spraying method. Since the thermal spraying method is described in the first embodiment, a description thereof will be omitted here.

[0089] The heater wire 154 may include a metal that generates heat when electricity is applied. Specifically, the heater wire 154 may include a metal selected from tungsten, nickel, chromium, cobalt, and molybdenum. The metal may be an alloy including these metals, such as an alloy of nickel and chromium, or an alloy including nickel, chromium, and cobalt.

[0090] The heater wire 154 is preferably formed by separately processing a metal film or metal foil formed by sputtering, metal organic chemical vapor deposition (MOCVD), vapor deposition, printing, electrolytic plating, or the like, by etching, and disposing the processed metal film on the second insulating film 152. This is because, when the heater wire 154 is formed by a thermal spraying method, it is difficult to ensure uniform density, thickness, and width throughout the heater wire 154, whereas when a metal film or metal foil is processed by etching, it is possible to form a heater wire 154 with small variations in these physical parameters. This makes it possible to precisely control the temperature of the stage 124 and reduce the temperature distribution.

[0091] Furthermore, since the above-mentioned alloys have a higher volume resistivity than a single metal, when the layout, i.e., the planar shape, of the heater wire 154 is the same, the thickness of the heater wire 154 can be made larger than when a single metal is used. This makes it possible to reduce the variation in thickness of the heater wire 154, thereby achieving a smaller temperature distribution.

[0092] As an optional configuration, the stage 124 may have one or more through-holes 144 penetrating both the support plate 140 and the heater layer 150. A helium inlet pipe may be provided in the chamber 202 illustrated in FIG. 9 so that a gas with high thermal conductivity such as helium flows through the through-hole 144. This allows the gas to flow through the gap between the stage 124 and the substrate, and the thermal energy of the stage 124 can be efficiently transferred to the substrate. Note that, in one embodiment of the present invention, an example is shown in which the first insulating film 141 is provided on the inner wall of the through-hole 144, but the first insulating film 141 may be provided on a part of the inner wall of the through-hole 144.

[0093] 12C, the stage 124 may further include an electrostatic chuck 170 as a mechanism for fixing the substrate onto the stage 124. Since this is shown in the first embodiment, a description thereof will be omitted here.

[0094] As described above, the stage according to one embodiment of the present invention has fewer gaps or voids and a higher dielectric breakdown voltage than conventional stages. Therefore, by applying the manufacturing method according to one embodiment of the present invention, a stage with high withstand voltage and a manufacturing method for the stage can be provided.

[0095] The above-described embodiments of the present invention may be combined as appropriate as long as they are not mutually inconsistent. Furthermore, those in which a person skilled in the art appropriately adds or deletes components or modifies the design based on each embodiment are also included in the scope of the present invention as long as they include the gist of the present invention.

[0096] Furthermore, even if there are other effects and advantages different from those brought about by the respective embodiments described above, those which are clear from the description in this specification or which can be easily predicted by a person skilled in the art are naturally understood to be brought about by the present invention. [Explanation of symbols]

[0097] 100: stage, 102: chamber, 110: sheath heater, 122: stage, 124: stage, 128: temperature controller, 140: support plate, 141: first insulating film, 142: opening, 144: through hole, 146: groove (flow path), 146: groove, 150: heater layer, 152: second insulating film, 154: heater wire, 156: third insulating film, 160: first base material, 162: second base material, 170: electrostatic chuck, 172: electrostatic chuck electrode, 174: film, 176: rib, 200: etching device, 202: chamber, 204: exhaust device, 206: introduction tube, 208: valve, 210: waveguide, 212: matrix microwave source, 214: window, 216: magnet, 218: magnet, 220: magnet, 224: power supply, 226: power supply, 228: temperature controller, 230: heater power supply, 440: first surface, 442: second surface, 442-1: second surface, 442-2: second surface, 442-3: second surface, 442-4: second surface, 443: surface, 444: third surface, 446: void, 450: particle, 452: flat surface, 454: direction, 462: flat surface, 464: direction, 472: flat surface, 474: direction, 482: flat surface, 484: direction, 491: surface, 491S: curved surface, 492: flat surface, 492S: curved surface, 494: direction, 500: spray gun, 502: area

Claims

[Claim 1] A substrate having a surface to be formed at a corner; an insulating film including a plurality of particles each having a flat surface, the flat surface of the plurality of particles being in contact with a surface formed at the corner portion and provided along the surface formed at the corner portion; Including, stages.

Images