Plasma processing device

Abstract

To maintain the processing performance of a plasma processing device while decreasing the number of times of exchange of a baffle plate in the device.SOLUTION: A plasma processing device comprises a baffle structure which is disposed so as to enclose a substrate support section, and the baffle structure includes a stationary baffle plate and a movable baffle plate. The stationary baffle plate extends outward from a sidewall of the substrate support section and forms a gap between the stationary baffle plate and a sidewall of the chamber. The movable baffle plate extends inward from the sidewall of the chamber and forms a gap between the movable baffle plate and the sidewall of the substrate support section. The plasma processing device comprises: the baffle structure; an actuator which moves the movable baffle plate; and a control section which controls the actuator so as to reduce a distance between the stationary baffle plate and the movable baffle plate in accordance with wear of the stationary baffle plate.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] An exemplary embodiment of the present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 describes a technique in which a plasma processing apparatus has a conductive baffle plate. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2023-6217 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a technique for reducing the number of times a baffle plate needs to be replaced in a plasma processing apparatus while maintaining the processing performance of the apparatus. [Means for solving the problem]

[0005] In one exemplary embodiment of the present disclosure, a plasma processing apparatus includes a chamber, a substrate support disposed within the chamber, a plasma generating unit configured to generate plasma within the chamber, and a baffle structure disposed to surround the substrate support, the baffle structure including a fixed baffle plate formed of a first conductive material and having a plurality of first openings, the fixed baffle plate extending outwardly from a sidewall of the substrate support such that a gap is formed between the fixed baffle plate and a sidewall of the chamber, and a movable baffle plate formed of a second conductive material, the movable baffle plate including: The present invention comprises a baffle structure including a movable baffle plate extending inwardly from a sidewall of the chamber such that a gap is formed between the movable baffle plate and the sidewall of the substrate support, the movable baffle plate vertically overlapping the fixed baffle plate and having an inner portion having no openings and an outer portion having a plurality of second openings; at least one actuator configured to vertically move the movable baffle plate; and a controller configured to control the at least one actuator to reduce the distance between the fixed baffle plate and the movable baffle plate in response to wear of the fixed baffle plate. Effect of the Invention

[0006] According to one exemplary embodiment of the present disclosure, a technique can be provided that can maintain the processing performance of a plasma processing apparatus while reducing the number of times a baffle plate needs to be replaced. [Brief description of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. [Diagram 2] FIG. 1 is a diagram for explaining a configuration example of a plasma processing apparatus according to a first embodiment. [Diagram 3] 4A and 4B are diagrams for explaining an example of the configuration of a fixed baffle plate and a movable baffle plate. [Figure 4]FIG. 2 is a plan view for explaining an example of the configuration of a fixed baffle plate and a movable baffle plate. [Diagram 5] 13 is a diagram for explaining an example of a state in which the gap between the fixed baffle plate and the movable baffle plate is reduced. FIG. [Figure 6] FIG. 13 is a plan view illustrating an example of a configuration of a fixed baffle plate and a movable baffle plate having slit-shaped openings. [Figure 7] 1A and 1B are diagrams illustrating an example of a configuration of a fixed baffle plate and a movable baffle plate having slit-shaped openings. [Figure 8] FIG. 11 is a diagram for explaining an example of a state in which the first opening is widened. [Figure 9] 13 is a diagram for explaining an example of a state in which the gap between the fixed baffle plate and the movable baffle plate is reduced. FIG. [Figure 10] FIG. 11 is a diagram for explaining a configuration example of a plasma processing apparatus according to a second embodiment. [Figure 11] FIG. 4 is a plan view for explaining an example of the configuration of an upper baffle plate. [Figure 12] FIG. 2 is a plan view illustrating an example of the configuration of an upper baffle plate and a lower baffle structure. [Figure 13] FIG. 11 is a plan view illustrating an example of the configuration of a lower baffle structure. [Figure 14] FIG. 13 is a plan view illustrating an example of a state in which baffle segments of a lower baffle structure are inclined. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Each embodiment of the present disclosure will be described below.

[0009] In one exemplary embodiment, a method and apparatus for manufacturing a plasma generating device includes a chamber, a substrate support disposed within the chamber, a plasma generating portion configured to generate a plasma within the chamber, and a baffle structure disposed surrounding the substrate support, the baffle structure comprising: a fixed baffle plate formed of a first conductive material and having a plurality of first openings, the fixed baffle plate extending outwardly from a sidewall of the substrate support such that a gap is formed between the fixed baffle plate and a sidewall of the chamber; and a movable baffle plate formed of a second conductive material, the movable baffle plate being spaced apart from the movable baffle plate and the substrate support. A plasma processing apparatus is provided comprising: a baffle structure including a movable baffle plate extending inwardly from a sidewall of the chamber such that a gap is formed between the movable baffle plate and the sidewall of the support, the movable baffle plate vertically overlapping the fixed baffle plate and having an inner portion without any openings and an outer portion having a plurality of second openings; at least one actuator configured to vertically move the movable baffle plate; and a controller configured to control the at least one actuator to reduce the distance between the fixed baffle plate and the movable baffle plate in response to wear of the fixed baffle plate.

[0010] In one exemplary embodiment, the first conductive material includes Si or SiC.

[0011] In one exemplary embodiment, the second conductive material includes Si or SiC.

[0012] In one exemplary embodiment, a movable baffle plate is positioned below a fixed baffle plate.

[0013] In one exemplary embodiment, the plurality of first openings have a dot shape.

[0014] In one exemplary embodiment, the plurality of first openings have a slit shape.

[0015] In one exemplary embodiment, the plurality of second openings have a dot shape.

[0016] In one exemplary embodiment, the plurality of second openings have a slit shape.

[0017] In one exemplary embodiment, the wear of the stationary baffle plate is determined based on one or more selected from the group consisting of an etch rate of a substrate processed in the plasma processing apparatus, a pressure in the chamber, and a potential of the plasma.

[0018] In one exemplary embodiment, the movable baffle plate has a plurality of baffle segments arranged along a circumferential direction, and at least one actuator is configured to move the plurality of baffle segments individually in a longitudinal direction, and the control unit is configured to control the at least one actuator to reduce a distance between at least one of the plurality of baffle segments and the fixed baffle plate in response to wear of the fixed baffle plate.

[0019] In one exemplary embodiment, a method and apparatus for manufacturing a plasma generating device includes the steps of: a chamber; a substrate support disposed within the chamber; a plasma generating section configured to generate plasma within the chamber; an upper baffle plate disposed to surround the substrate support, the upper baffle plate being formed of a first conductive material and having a plurality of first openings; a lower baffle structure disposed to surround the substrate support and disposed below the upper baffle plate, the lower baffle structure comprising a plurality of baffle segments disposed along a circumferential direction, each baffle segment being formed of a second conductive material, each baffle segment having a plurality of second openings, the plurality of baffle segments extending along a radial direction; and a plurality of baffle segments disposed against a sidewall of the substrate support. A plasma processing apparatus is provided, comprising: a lower baffle structure including at least one flexible member configured to flexibly fix an inner peripheral end of each of the baffle segments; and a plurality of movable members corresponding to the plurality of baffle segments, each movable member configured to support an outer peripheral end of a corresponding baffle segment; at least one actuator configured to move the plurality of movable members individually in a vertical direction; and a control unit configured to control the at least one actuator to raise at least one of the plurality of movable members in response to wear of the upper baffle plate, so that the baffle segment corresponding to the movable member is tilted relative to the upper baffle plate.

[0020] In one exemplary embodiment, the first conductive material includes Si or SiC.

[0021] In one exemplary embodiment, the second conductive material includes Si or SiC.

[0022] In one exemplary embodiment, the plurality of first openings have a dot shape.

[0023] In one exemplary embodiment, the plurality of first openings have a slit shape.

[0024] In one exemplary embodiment, the plurality of second openings have a dot shape.

[0025] In one exemplary embodiment, the plurality of second openings have a slit shape.

[0026] In one exemplary embodiment, the wear of the upper baffle plate is determined based on one or more selected from the group consisting of an etch rate of a substrate processed in the plasma processing apparatus, a pressure in the chamber, and a potential of the plasma.

[0027] Hereinafter, each embodiment of the present disclosure will be described in detail with reference to the drawings. In each drawing, the same or similar elements are given the same reference numerals, and duplicated explanations will be omitted. Unless otherwise specified, the positional relationship such as up, down, left, right, etc. will be described based on the positional relationship shown in the drawing. The dimensional ratio of the drawings does not indicate the actual ratio, and the actual ratio is not limited to the illustrated ratio.

[0028] (First embodiment) <An example of a plasma processing system> FIG. 1 is a diagram for explaining a configuration example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support unit 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space, and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 described later, and the gas exhaust port is connected to an exhaust system 40 described later. The substrate support unit 11 is disposed in the plasma processing space, and has a substrate support surface for supporting a substrate.

[0029] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), an inductively coupled plasma (ICP), an electron-cyclotron-resonance plasma (ECR plasma), a helicon wave plasma (HWP), a surface wave plasma (SWP), or the like. Also, various types of plasma generating units may be used, including an alternating current (AC) plasma generating unit and a direct current (DC) plasma generating unit. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Thus, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0030] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to execute various steps described in the present disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to execute various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is realized, for example, by a computer 2a. The processing unit 2a1 may be configured to perform various control operations by reading a program from the storage unit 2a2 and executing the read program. This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read from the storage unit 2a2 by the processing unit 2a1 and executed. The medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0031] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining the configuration example of the capacitively coupled plasma processing apparatus.

[0032] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10 (also simply referred to as a "chamber"), a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one processing gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed in the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a part of a ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from a housing of the plasma processing chamber 10.

[0033] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting the substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of the substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0034] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 may function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that other members surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Also, at least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32 described later may be disposed in the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal described later is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Also, the electrostatic electrode 1111b may function as a lower electrode. Thus, the substrate support 11 includes at least one lower electrode.

[0035] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0036] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as a brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 111a.

[0037] The shower head 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The shower head 13 also includes at least one upper electrode. Note that the gas introduction unit may include, in addition to the shower head 13, one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0038] The gas supply 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply 20 is configured to supply at least one process gas from a respective gas source 21 through a respective flow controller 22 to the showerhead 13. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 20 may include at least one flow modulation device to modulate or pulse a flow rate of the at least one process gas.

[0039] The power source 30 includes an RF power source 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power source 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This causes a plasma to be formed from at least one processing gas supplied to the plasma processing space 10s. Thus, the RF power source 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0040] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0041] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 100 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are provided to at least one lower electrode. Also, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0042] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0043] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular or combination of these pulse waveforms. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have a positive polarity or a negative polarity. Also, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one period. The first and second DC generating units 32a, 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided in place of the second RF generating unit 31b.

[0044] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is adjusted by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0045] In one embodiment, the plasma processing apparatus 1 may include a baffle structure 200 and an actuator 201 .

[0046] The baffle structure 200 may be disposed to surround the substrate support 11. The baffle structure 200 may include a fixed baffle plate 210 and a movable baffle plate 211.

[0047] 2 and 3, the fixed baffle plate 210 may extend outward from the sidewall 11a of the substrate support 11. The fixed baffle plate 210 may be configured to form a gap between the fixed baffle plate 210 and the sidewall 10a of the chamber 10. The fixed baffle plate 210 may be fixed to the sidewall 11a of the substrate support 11. The sidewall 11a of the substrate support 11 to which the fixed baffle plate 210 is fixed may be an annular conductive member 301, which will be described below.

[0048] The fixed baffle plate 210 may have an annular plate shape. The fixed baffle plate 210 may be formed of a first conductive material. The first conductive material may be a substrate of the fixed baffle plate 210. The first conductive material may include single crystal or polycrystalline Si or SiC. In one embodiment, the first conductive material includes silicon (Si) or silicon carbide (SiC). In one embodiment, the first conductive material includes carbon (C).

[0049] FIG. 4 is a plan view for explaining a configuration example of the fixed baffle plate 210 and the movable baffle plate 211. As shown in FIG. 3 and FIG. 4, the fixed baffle plate 210 may have a plurality of first openings 230 penetrating in the vertical direction. The plurality of first openings 230 may have a dot shape (round hole shape). Each of the first openings 230 may be a round hole. The plurality of first openings 230 may be arranged in a line along the radial direction X of the fixed baffle plate 210, and the plurality of first openings 230 in the line may be arranged over the entire circumference of the fixed baffle plate 210 in the circumferential direction Y. The plurality of first openings 230 may be arranged in the entire region of the fixed baffle plate 210.

[0050] The movable baffle plate 211 may extend inwardly from a sidewall 10a of the chamber 10. The movable baffle plate 211 may be configured to form a gap between the movable baffle plate 211 and a sidewall 11a of the substrate support 11.

[0051] The movable baffle plate 211 may have an annular plate shape. The movable baffle plate 211 may be formed of a second conductive material. The second conductive material may be a substrate of the movable baffle plate 211. The second conductive material may include single crystal or polycrystalline Si or SiC. In one embodiment, the second conductive material includes silicon (Si) or silicon carbide (SiC). In one embodiment, the second conductive material includes carbon (C).

[0052] The movable baffle plate 211 may be positioned below the fixed baffle plate 210 .

[0053] 3, the movable baffle plate 211 may have an annular inner portion 250 and an annular outer portion 251. The inner portion 250 may longitudinally overlap the fixed baffle plate 210. The inner portion 250 may not have any openings.

[0054] As shown in FIGS. 3 and 4 , the outer portion 251 may not overlap the fixed baffle plate 210 in the vertical direction and may be exposed to the space above. The outer portion 251 may have a plurality of second openings 260 penetrating therethrough in the vertical direction. The plurality of second openings 260 may have a dot shape. Each of the second openings 260 may be a circular hole. The plurality of second openings 260 may be arranged in a line along the radial direction X of the movable baffle plate 211, and the plurality of second openings 260 in the line may be arranged over the entire circumference of the movable baffle plate 211 in the circumferential direction Y. The plurality of second openings 260 may be arranged in the entire region of the outer portion 251.

[0055] 3, the actuator 201 may be configured to vertically move the movable baffle plate 211. The actuator 201 may be disposed inside the side wall 10a of the chamber 10.

[0056] The control unit 2 may control the actuator 201 to reduce the distance between the fixed baffle plate 210 and the movable baffle plate 211 in response to wear of the fixed baffle plate 210. Wear of the fixed baffle plate 210 may be determined based on one or more selected from the group consisting of an etching rate of a substrate processed in the plasma processing apparatus 1, a pressure in the chamber 10, and a plasma potential. The pressure in the chamber 10 may be a pressure difference between the pressure in the plasma processing space 10s and the pressure in the exhaust space 10f located downstream (on the gas exhaust port 10e side) of the movable baffle plate 211. When the pressure difference becomes smaller than a predetermined threshold, the distance between the fixed baffle plate 210 and the movable baffle plate 211 may be reduced. The pressure in the chamber 10 may be detected by a pressure sensor that detects the pressure in the plasma processing space 10s and a pressure sensor that detects the pressure in the exhaust space 10f.

[0057] The potential of the plasma may be detected by electronics electrically connected to the upper electrode and / or the lower electrode. When the potential of the plasma falls below a predetermined threshold, the distance between the fixed baffle plate 210 and the movable baffle plate 211 may be decreased. The etch rate of the substrate may be detected by periodically examining the processed substrate. When the etch rate of the substrate falls below a predetermined threshold, the distance between the fixed baffle plate 210 and the movable baffle plate 211 may be decreased.

[0058] 2, the substrate support 11 may further include an annular insulating member 300 and an annular conductive member 301. The annular insulating member 300 may be configured to cover the outer circumferential surfaces of the electrostatic chuck 1111, the ring assembly 112, and the base 1110. The annular insulating member 300 may have a substantially cylindrical shape. The annular insulating member 300 may include an insulating material such as quartz.

[0059] The annular conductive member 301 may be configured to cover the outer circumferential surface of the annular insulating member 300. The annular conductive member 301 may be electrically insulated from the electrostatic chuck 1111, the ring assembly 112, and the base 1110 by the annular insulating member 300. The annular conductive member 301 may have a substantially cylindrical shape. The annular conductive member 301 may include a metal such as aluminum. The annular conductive member 301 may be electrically connected to the bottom 10c of the chamber 10. The bottom 10c of the chamber 10 may be electrically connected to a ground potential.

[0060] 2 and 3, the inner peripheral end of the fixed baffle plate 210 may be electrically connected to the annular conductive member 301. Thus, the fixed baffle plate 210 may be electrically connected to a ground potential via the annular conductive member 301 and the bottom 10c of the chamber 10. In addition, the movable baffle plate 211 may be electrically connected to a ground potential via the side wall 10a of the chamber 10.

[0061] <An example of a plasma processing method> The plasma processing method includes an etching process in which plasma is used to etch a film on a substrate W. In one embodiment, the plasma processing method is performed by a control unit 2 in a plasma processing apparatus 1.

[0062] First, the substrate W is carried into the chamber 10 by the transport arm, placed on the substrate support portion 11 by the lifter, and held by suction on the substrate support portion 11 as shown in FIG.

[0063] Next, plasma is generated in the plasma processing space 10s by the plasma generation unit 12. First, a processing gas is supplied to the shower head 13 by the gas supply unit 20, and is supplied from the shower head 13 to the plasma processing space 10s. The processing gas supplied at this time contains a gas that generates active species necessary for etching the substrate W.

[0064] One or more RF signals are supplied to the upper electrode and / or the lower electrode from the RF power supply 31. The atmosphere in the plasma processing space 10s is exhausted from the gas exhaust port 10e, and the inside of the plasma processing space 10s is depressurized. Plasma is generated from the processing gas on the substrate support 11 in the plasma processing space 10s, and the substrate W is etched.

[0065] 3, in plasma processing, the atmosphere in the plasma processing space 10s flows down through the gap S1 between the fixed baffle plate 210 and the movable baffle plate 211 outside the substrate support 11, the first opening 230, and the second opening 260, and is exhausted to the outside of the chamber 10 through the gas exhaust port 10e. In one embodiment, the gap S1 between the fixed baffle plate 210 and the movable baffle plate 211 is secured to be large, and the atmosphere in the plasma processing space 10s may be exhausted mainly through the gap S1.

[0066] As time passes, as shown in FIG. 5, the fixed baffle plate 210 is worn down by the plasma, and the diameter of the first opening 230 gradually becomes larger. In particular, the diameter of the first opening 230 located on the inside close to the plasma generation region becomes larger. The movable baffle plate 211 is also worn down, and the diameter of the second opening 260 also becomes larger. Since the fixed baffle plate 210 is closer to the plasma generation region than the movable baffle plate 211, the wear of the fixed baffle plate 210 is greater than the wear of the movable baffle plate 211. Then, according to the wear of the fixed baffle plate 210, the movable baffle plate 211 is raised by the actuator 201, and the gap S1 between the fixed baffle plate 210 and the movable baffle plate 211 is reduced. This operation is performed by the control unit 2 controlling the actuator 201. As a result, the atmosphere in the plasma processing space 10s is exhausted mainly through the first opening 230 and the second opening 260. In this way, the exhaust flow rate of the atmosphere in the plasma processing space 10s and the pressure in the plasma processing space 10s are maintained.

[0067] According to this exemplary embodiment, the plasma processing apparatus 1 includes a fixed baffle plate 210, a movable baffle plate 211, an actuator 201 that moves the movable baffle plate 211 in the vertical direction, and a control unit 2 that controls the actuator 201 to reduce the distance between the fixed baffle plate 210 and the movable baffle plate 211 according to wear of the fixed baffle plate 210. As a result, when the fixed baffle plate 210 is worn by plasma and the first opening 230 becomes large, the distance (gap S1) between the fixed baffle plate 210 and the movable baffle plate 211 is reduced, so that the exhaust flow rate of the atmosphere in the plasma processing space 10s and the pressure in the plasma processing space 10s can be maintained. As a result, the processing performance of the plasma processing apparatus 1 can be maintained while reducing the number of times the baffle plate is replaced.

[0068] Although Si or SiC has a weaker plasma resistance and is more likely to be consumed than ceramics, etc., it can suppress dust generation and metal contamination. In one embodiment, the first conductive material of the fixed baffle plate 210 may contain Si or SiC. The second conductive material of the movable baffle plate 211 may contain Si or SiC. In this case, it is possible to maintain the processing performance of the plasma processing apparatus 1 while reducing the number of times the baffle plate is replaced, and further, it is possible to suppress dust generation and metal contamination.

[0069] 6 and 7, in this embodiment, the multiple first openings 230 of the fixed baffle plate 210 may have a slit shape. Each of the first openings 230 may have a rectangular shape extending in the radial direction X of the fixed baffle plate 210. The multiple first openings 230 may be arranged at equal intervals all around the fixed baffle plate 210 in the circumferential direction Y. The first openings 230 may have other shapes.

[0070] In this embodiment, the multiple second openings 260 of the movable baffle plate 211 may have a slit shape. Each second opening 260 may have a rectangular shape extending in the radial direction X of the movable baffle plate 211. The multiple second openings 260 may be arranged at equal intervals all around the outer portion 251 in the circumferential direction Y. Note that the second openings 260 may have other shapes.

[0071] 7, the atmosphere in the plasma processing space 10s flows downward through the gap S1 between the fixed baffle plate 210 and the movable baffle plate 211, the first opening 230, and the second opening 260, and is exhausted from the gas exhaust port 10e to the outside of the chamber 10. In one embodiment, the gap S1 between the fixed baffle plate 210 and the movable baffle plate 211 is secured to be large, and the atmosphere in the plasma processing space 10s may be exhausted mainly through the gap S1.

[0072] As time passes, as shown in FIG. 8, the fixed baffle plate 210 is worn down by the plasma, and the width of the first opening 230 gradually increases. In particular, the width of the inner portion of the first opening 230 close to the plasma generation region becomes larger. Then, as shown in FIG. 9, the movable baffle plate 211 is raised by the actuator 201 in response to the wear of the fixed baffle plate 210, and the gap S1 between the fixed baffle plate 210 and the movable baffle plate 211 is reduced. As a result, the atmosphere in the plasma processing space 10s is exhausted mainly through the first opening 230 and the second opening 260. In this way, the exhaust flow rate of the atmosphere in the plasma processing space 10s and the pressure in the plasma processing space 10s are maintained.

[0073] In this embodiment, the movable baffle plate 211 may have a plurality of baffle segments arranged along the circumferential direction Y. The actuator 201 may be configured to move the plurality of baffle segments individually in the vertical direction. The control unit 2 may control the actuator 201 to reduce the distance between the fixed baffle plate 210 and the baffle segments according to wear of the fixed baffle plate 210. In this case, by adjusting the gap S1 between the fixed baffle plate 210 and the movable baffle plate 211 for each of the plurality of baffle segments, it is possible to reduce the bias of exhaust gas generated around the substrate support unit 11. In this embodiment, the positions of the fixed baffle plate 210 and the movable baffle plate 211 may be reversed. That is, the fixed baffle plate 210 may be below the movable baffle plate 211. Furthermore, the plasma processing apparatus 1 may include an actuator 201 configured to move the fixed baffle plate 210 in the vertical direction.

[0074] (Second embodiment) Fig. 10 is a diagram for explaining a configuration example of the plasma processing apparatus 1 in the second embodiment. In one embodiment, the plasma processing apparatus 1 may include an upper baffle plate 400, a lower baffle structure 401, and at least one actuator 402. Fig. 11 is a plan view for explaining a configuration example of the upper baffle plate 400. Fig. 12 is a cross-sectional side view for explaining a configuration example of the upper baffle plate 400 and the lower baffle structure 401.

[0075] As shown in FIGS. 11 and 12 , the upper baffle plate 400 may be disposed to surround the substrate support 11. The upper baffle plate 400 may extend outward from the side wall 11a of the substrate support 11 and reach the side wall 10a of the chamber 10. The inner peripheral end of the upper baffle plate 400 may be fixed to the side wall 11a of the substrate support 11, and the outer peripheral end of the upper baffle plate 400 may be fixed to the side wall 10a of the chamber 10. Note that the outer peripheral end of the upper baffle plate 400 may not be fixed to the side wall 10a of the chamber 10, and there may be a gap between the upper baffle plate 400 and the side wall 10a of the chamber 10. The upper baffle plate 400 may be fixed to either the side wall 11a of the substrate support 11 or the side wall 10a of the chamber 10. The side wall 11 a of the substrate support 11 to which the upper baffle plate 400 is fixed may be an annular conductive member 301 .

[0076] The upper baffle plate 400 may have an annular plate shape. The upper baffle plate 400 may be formed of a first conductive material. The first conductive material may be a substrate of the upper baffle plate 400. The first conductive material may include single crystal or polycrystalline Si or SiC. In one embodiment, the first conductive material includes silicon (Si) or silicon carbide (SiC). In one embodiment, the first conductive material includes carbon (C).

[0077] The upper baffle plate 400 may have a plurality of first openings 410 penetrating in the vertical direction. The plurality of first openings 410 may have a dot shape. Each of the first openings 410 may be a circular hole. The plurality of first openings 410 may be arranged in a line along the radial direction X of the upper baffle plate 400, and the line of the plurality of first openings 410 may be arranged over the entire circumference of the upper baffle plate 400 in the circumferential direction Y. The plurality of first openings 410 may be arranged over the entire area of ​​the upper baffle plate 400.

[0078] As shown in FIGS. 12 and 13, the lower baffle structure 401 is disposed to surround the substrate support 11 and may be disposed below the upper baffle plate 400 .

[0079] The lower baffle structure 401 may include a number of baffle segments 430 , at least one flexible member 440 , and a number of moveable members 450 .

[0080] As shown in FIG. 13, the baffle segments 430 may be arranged along the circumferential direction Y. Each baffle segment 430 may have a sector-shaped plate shape. A length of the baffle segment 430 in the radial direction X may be shorter than a length of the upper baffle plate 400 in the radial direction X. The baffle segments 430 may be formed of a second conductive material. The second conductive material may be a base material of the baffle segments 430. The second conductive material may include single crystal or polycrystalline Si or SiC. In one embodiment, the second conductive material includes silicon (Si) or silicon carbide (SiC). In one embodiment, the second conductive material includes carbon (C).

[0081] 12 and 13, the baffle segment 430 may have a plurality of second openings 460 penetrating in the vertical direction. The plurality of second openings 460 may have a dot shape. Each of the second openings 460 may be a circular hole. The plurality of second openings 460 may be arranged in a line along the radial direction X of the baffle segment 430, and the line of the plurality of second openings 460 may be arranged over the entire circumference of the baffle segment 430 in the circumferential direction Y. The plurality of second openings 460 may be arranged over the entire region of the baffle segment 430.

[0082] The flexible member 440 may be configured to flexibly fix the inner peripheral end of each of the multiple baffle segments 430 to the side wall 11a of the substrate support 11. The flexible member 440 may be a bellows or an elastic member. The inner end of the flexible member 440 may be connected to the side wall 11a of the substrate support 11, and the outer end of the flexible member 440 may be connected to the inner peripheral end of each baffle segment 430.

[0083] 12, the plurality of movable members 450 may be configured to support the outer circumferential edges of each of the plurality of baffle segments 430. Each movable member 450 may have a longitudinally extending rod shape and support a corresponding baffle segment 430 thereon.

[0084] The actuator 402 may be configured to move the multiple moveable members 450 individually in a longitudinal direction.

[0085] The control unit 2 may control the actuator 402 to raise at least one of the multiple movable members 450 in response to wear of the upper baffle plate 400, so that the baffle segment 430 corresponding to the movable member 450 is tilted with respect to the upper baffle plate 400. The wear of the upper baffle plate 400 may be determined based on one or more selected from the group consisting of an etching rate of a substrate processed in the plasma processing apparatus 1, a pressure in the chamber 10, and a plasma potential. The wear of the upper baffle plate 400 may be determined for each area in which each baffle segment 430 is arranged.

[0086] The pressure in the chamber 10 may be the pressure difference between the pressure in the plasma processing space 10s and the pressure in the exhaust space 10f located downstream (on the gas exhaust port 10e side) of the lower baffle structure 401. When the pressure difference becomes smaller than a predetermined threshold, the baffle segment 430 may be tilted with respect to the upper baffle plate 400. Also, a specific baffle segment 430 may be tilted with respect to the upper baffle plate 400 so as to reduce the bias of the pressure difference around the substrate support 11. The pressure in the chamber 10 may be detected by a pressure sensor that detects the pressure in the plasma processing space 10s and a pressure sensor that detects the pressure in the exhaust space 10f.

[0087] The plasma potential may be detected by electronics electrically connected to the upper electrode or / and the lower electrode. When the plasma potential is smaller than a predetermined threshold, the baffle segment 430 may be tilted relative to the upper baffle plate 400. Also, a particular baffle segment 430 may be tilted relative to the upper baffle plate 400 so that the bias of the plasma potential in the plasma processing space 10s is reduced. The etching rate of the substrate may be detected by periodically checking the processed substrate. When the substrate etching rate is smaller than a predetermined threshold, the baffle segment 430 may be tilted relative to the upper baffle plate 400. Also, a particular baffle segment 430 may be tilted relative to the upper baffle plate 400 so that the bias of the etching rate in the plasma processing space 10s is reduced.

[0088] Other configurations of the plasma processing apparatus 1 in the second embodiment may be similar to those in the first embodiment.

[0089] In the plasma processing of this embodiment, as shown in FIG. 12, the atmosphere in the plasma processing space 10s descends through the first opening 410 of the upper baffle plate 400 located between the substrate support 11 and the chamber 10 and the second opening 460 of the lower baffle structure 401, and is exhausted to the outside of the chamber 10 through the gas exhaust port 10e.

[0090] As time passes, as shown in FIG. 14, the upper baffle plate 400 is worn down by the plasma, and the diameter of the first opening 410 gradually increases. In particular, the diameter of the first opening 410 located on the inside near the plasma generation region becomes larger. The lower baffle structure 401 is also worn down, and the diameter of the second opening 460 also becomes larger. Since the upper baffle plate 400 is closer to the plasma generation region than the lower baffle structure 401, the upper baffle plate 400 is worn down more than the lower baffle structure 401. Then, in response to the wear of the upper baffle plate 400, the actuator 402 raises at least one of the multiple movable members 450, and the baffle segment 430 corresponding to the movable member 450 is tilted relative to the upper baffle plate 400. At this time, the baffle segment 430 corresponding to the area of ​​the upper baffle plate 400 where wear is large may be tilted. This operation is performed by the controller 2 controlling the actuator 402. As a result, the atmosphere in the plasma processing space 10s passes through the first opening 410 of the upper baffle plate 400 and the second opening 460 of the inclined baffle segment 430. The second opening 460 of the inclined baffle segment 430 increases the resistance when the gas passes through. As a result, the exhaust flow rate of the atmosphere in the plasma processing space 10s and the pressure in the plasma processing space 10s are maintained.

[0091] According to this exemplary embodiment, the plasma processing apparatus 1 includes an upper baffle plate 400, a lower baffle structure 401, an actuator 201 for individually moving a plurality of movable members 450 in the vertical direction, and a control unit 2 for controlling the actuator 201 to raise at least one of the plurality of movable members 450 according to wear of the upper baffle plate 400 so that the baffle segment 430 corresponding to the movable member 450 is tilted with respect to the upper baffle plate 400. As a result, when the upper baffle plate 400 is worn by plasma and the first opening 410 becomes large, the baffle segment 430 of the lower baffle structure 401 is tilted to increase the resistance of the second opening 460, thereby maintaining the exhaust flow rate of the atmosphere in the plasma processing space 10s and the pressure in the plasma processing space 10s. As a result, the processing performance of the plasma processing apparatus 1 can be maintained while reducing the number of times the baffle plate is replaced.

[0092] The exhaust of the plasma processing space 10s may not be uniform around the substrate support 11 due to the positions and number of the gas exhaust port 10e and the exhaust pump. According to this exemplary embodiment, the exhaust bias around the substrate support 11 can be reduced by selectively tilting a specific baffle segment 430. In addition, the exhaust bias can be reduced by adjusting the tilt angle for each of the multiple baffle segments 430.

[0093] Although the first and second embodiments are capacitively coupled plasma processing apparatuses, the present invention is not limited to these and may be applied to other plasma processing apparatuses. For example, an inductively coupled plasma processing apparatus may be used instead of the capacitively coupled plasma processing apparatus.

[0094] The embodiments of the present disclosure further include the following aspects.

[0095] (Appendix 1) A chamber; a substrate support disposed within the chamber; a plasma generating unit configured to generate a plasma in the chamber; A baffle structure disposed to surround the substrate support, the baffle structure comprising: a stationary baffle plate formed from a first conductive material and having a plurality of first openings, the stationary baffle plate extending outwardly from a sidewall of the substrate support such that a gap is formed between the stationary baffle plate and a sidewall of the chamber; a movable baffle plate formed of a second conductive material, the movable baffle plate extending inwardly from the sidewall of the chamber such that a gap is formed between the movable baffle plate and the sidewall of the substrate support, the movable baffle plate longitudinally overlapping the fixed baffle plate, the movable baffle plate having an inner portion without an opening and an outer portion having a second plurality of openings; a baffle structure including: at least one actuator configured to move the movable baffle plate vertically; a controller configured to control the at least one actuator to reduce a distance between the fixed baffle plate and the movable baffle plate in response to wear of the fixed baffle plate; A plasma processing apparatus comprising:

[0096] (Appendix 2) 2. The plasma processing apparatus of claim 1, wherein the first conductive material includes Si or SiC.

[0097] (Appendix 3) 3. The plasma processing apparatus according to claim 1, wherein the second conductive material includes Si or SiC.

[0098] (Appendix 4) 4. The plasma processing apparatus of claim 1, wherein the movable baffle plate is disposed below the fixed baffle plate.

[0099] (Appendix 5) 5. The plasma processing apparatus of claim 1, wherein the plurality of first openings have a dot shape.

[0100] (Appendix 6) 5. The plasma processing apparatus of claim 1, wherein the plurality of first openings have a slit shape.

[0101] (Appendix 7) 7. The plasma processing apparatus of claim 1, wherein the second openings have a dot shape.

[0102] (Appendix 8) 7. The plasma processing apparatus of claim 1, wherein the second openings have a slit shape.

[0103] (Appendix 9) 9. The plasma processing apparatus of claim 1, wherein wear of the fixed baffle plate is determined based on one or more selected from the group consisting of an etching rate of a substrate processed in the plasma processing apparatus, a pressure in the chamber, and a potential of the plasma.

[0104] (Appendix 10) The movable baffle plate has a plurality of baffle segments arranged along a circumferential direction, the at least one actuator configured to longitudinally move the plurality of baffle segments individually; 10. The plasma processing apparatus of claim 1, wherein the control unit is configured to control the at least one actuator to reduce a distance between at least one of the plurality of baffle segments and the fixed baffle plate in response to wear of the fixed baffle plate.

[0105] (Appendix 11) A chamber; a substrate support disposed within the chamber; a plasma generating unit configured to generate a plasma in the chamber; an upper baffle plate disposed around the substrate support, the upper baffle plate being formed from a first conductive material and having a plurality of first openings; a lower baffle structure disposed to surround the substrate support and below the upper baffle plate, the lower baffle structure comprising: a plurality of circumferentially arranged baffle segments, each baffle segment being formed of a second conductive material, each baffle segment having a plurality of second openings, and each baffle segment extending radially; at least one flexible member configured to flexibly secure an inner peripheral edge of each of the plurality of baffle segments to a sidewall of the substrate support; a plurality of movable members corresponding to the plurality of baffle segments, each movable member configured to support an outer periphery of a corresponding baffle segment; the lower baffle structure including: at least one actuator configured to move the plurality of moveable members individually in a longitudinal direction; a control unit configured to control the at least one actuator to raise at least one of the plurality of movable members in response to wear of the upper baffle plate so that the baffle segment corresponding to the movable member is tilted relative to the upper baffle plate; and A plasma processing apparatus comprising:

[0106] (Appendix 12) 12. The plasma processing apparatus of claim 11, wherein the first conductive material includes Si or SiC.

[0107] (Appendix 13) 13. The plasma processing apparatus according to claim 11, wherein the second conductive material includes Si or SiC.

[0108] (Appendix 14) 14. The plasma processing apparatus of claim 11, wherein the plurality of first openings have a dot shape.

[0109] (Appendix 15) 14. The plasma processing apparatus of claim 11, wherein the plurality of first openings have a slit shape.

[0110] (Appendix 16) 16. The plasma processing apparatus of claim 11, wherein the second openings have a dot shape.

[0111] (Appendix 17) 16. The plasma processing apparatus of claim 11, wherein the plurality of second openings have a slit shape.

[0112] (Appendix 18) 18. The plasma processing apparatus of claim 11, wherein the wear of the upper baffle plate is determined based on one or more selected from the group consisting of an etching rate of a substrate processed in the plasma processing apparatus, a pressure in the chamber, and a potential of the plasma.

[0113] The above embodiments are described for the purpose of explanation and are not intended to limit the scope of the present disclosure. Various modifications can be made to the above embodiments without departing from the scope and spirit of the present disclosure. For example, some components in one embodiment can be added to other embodiments. Also, some components in one embodiment can be replaced with corresponding components in other embodiments. [Explanation of symbols]

[0114] 1: plasma processing apparatus, 2: control unit, 10: chamber, 11: substrate support unit, 200: baffle structure, 201: actuator, 210: fixed baffle plate, 211: movable baffle plate, 230: first opening, 250: inner portion, 251: outer portion, 260: second opening, S1: gap, W: substrate

Claims

1. A chamber; a substrate support disposed within the chamber; a plasma generating unit configured to generate a plasma in the chamber; A baffle structure disposed to surround the substrate support, the baffle structure comprising: a stationary baffle plate formed from a first conductive material and having a first plurality of openings, the stationary baffle plate extending outwardly from a sidewall of the substrate support such that a gap is formed between the stationary baffle plate and a sidewall of the chamber; a movable baffle plate formed of a second conductive material, the movable baffle plate extending inwardly from the sidewall of the chamber such that a gap is formed between the movable baffle plate and the sidewall of the substrate support, the movable baffle plate longitudinally overlapping the fixed baffle plate, the movable baffle plate having an inner portion without an opening and an outer portion having a second plurality of openings; a baffle structure including: at least one actuator configured to move the movable baffle plate vertically; a controller configured to control the at least one actuator to reduce a distance between the fixed baffle plate and the movable baffle plate in response to wear of the fixed baffle plate; A plasma processing apparatus comprising:

2. The plasma processing apparatus of claim 1 , wherein the first conductive material comprises Si or SiC.

3. The plasma processing apparatus of claim 2 , wherein the second conductive material includes Si or SiC.

4. The plasma processing apparatus of claim 3 , wherein the movable baffle plate is disposed below the fixed baffle plate.

5. The plasma processing apparatus of claim 4 , wherein the plurality of first openings have a dot shape.

6. The plasma processing apparatus of claim 4 , wherein the plurality of first openings have a slit shape.

7. The plasma processing apparatus according to claim 4 , wherein the second openings have a dot shape.

8. The plasma processing apparatus according to claim 4 , wherein the second openings have a slit shape.

9. 2. The plasma processing apparatus of claim 1, wherein the wear of the stationary baffle plate is determined based on one or more selected from the group consisting of an etch rate of a substrate processed in the plasma processing apparatus, a pressure in the chamber, and a potential of the plasma.

10. The movable baffle plate has a plurality of baffle segments arranged along a circumferential direction, the at least one actuator configured to longitudinally move the plurality of baffle segments individually; The plasma processing apparatus of claim 1 , wherein the controller is configured to control the at least one actuator to reduce a distance between at least one of the plurality of baffle segments and the fixed baffle plate in response to wear of the fixed baffle plate.

11. A chamber; a substrate support disposed within the chamber; a plasma generating unit configured to generate a plasma in the chamber; an upper baffle plate disposed around the substrate support, the upper baffle plate being formed from a first conductive material and having a plurality of first openings; a lower baffle structure disposed to surround the substrate support and below the upper baffle plate, the lower baffle structure comprising: a plurality of circumferentially arranged baffle segments, each baffle segment being formed of a second conductive material, each baffle segment having a plurality of second openings, and each baffle segment extending radially; at least one flexible member configured to flexibly secure an inner peripheral edge of each of the plurality of baffle segments to a sidewall of the substrate support; a plurality of movable members corresponding to the plurality of baffle segments, each movable member configured to support an outer periphery of a corresponding baffle segment; the lower baffle structure including: at least one actuator configured to move the plurality of moveable members individually in a longitudinal direction; a control unit configured to control the at least one actuator to raise at least one of the plurality of movable members in response to wear of the upper baffle plate so that the baffle segment corresponding to the movable member is tilted relative to the upper baffle plate; and A plasma processing apparatus comprising:

12. The plasma processing apparatus of claim 11 , wherein the first conductive material comprises Si or SiC.

13. The plasma processing apparatus of claim 12 , wherein the second conductive material comprises Si or SiC.

14. The plasma processing apparatus of claim 13 , wherein the plurality of first openings have a dot shape.

15. The plasma processing apparatus of claim 13 , wherein the plurality of first openings have a slit shape.

16. The plasma processing apparatus of claim 13 , wherein the second openings have a dot shape.

17. The plasma processing apparatus according to claim 13 , wherein the second openings have a slit shape.

18. 12. The plasma processing apparatus of claim 11, wherein the wear of the upper baffle plate is determined based on one or more selected from the group consisting of an etch rate of a substrate processed in the plasma processing apparatus, a pressure in the chamber, and a potential of the plasma.

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