Film deposition device

Abstract

To provide a film deposition device, in which a mask member is more difficult to flex than conventional one, and it is difficult to cause a difference of a film thickness depending on a film deposition position.SOLUTION: A device has a base material holding part, a gas emission part, and a mask unit. Film deposition gas emitted from the gas emission part is limited by the mask unit, and a thin film is deposited on a base material held by the base material holding part. The mask unit has a mask member, and a mask frame. The film deposition gas is a gas mixture of thin film formation gas forming a thin film and carrier gas, and has a foot region, in which a film thickness distribution of the thin film on a cross section passing through a center of the base material is normal and more than 0% and 5% or less of a maximum film thickness, when the thin film is deposited on the base material without the mask unit. The mask frame has a mask support part for supporting the mask member at a position overlaid on the foot region, when seen in a direction orthogonal to the base material from the gas emission part side.SELECTED DRAWING: Figure 2

Description

[Technical field]

[0001] The present invention relates to a film forming apparatus for forming a thin film on a substrate. [Background technology]

[0002] Conventionally, a vacuum deposition apparatus has been used to form each layer of an organic EL device (for example, Patent Document 1). The deposition apparatus of Patent Document 1 is a so-called gas carrier type deposition apparatus, in which solid (mainly powdered) thin film forming material is introduced into a vaporization chamber using a high-temperature carrier gas, the thin film forming material is heated and vaporized in the vaporization chamber to generate a thin film forming gas, the thin film forming gas is pressurized by the carrier gas to a deposition chamber, and a mixture of the carrier gas and thin film forming gas is sprayed onto a substrate in the deposition chamber. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2022-112316 A Summary of the Invention [Problem to be solved by the invention]

[0004] Incidentally, when manufacturing organic EL devices industrially, multiple organic EL devices are often manufactured simultaneously using one large-sized substrate. That is, the deposition apparatus used for the organic EL devices uses a mask member having an opening in a portion corresponding to each organic EL device, and the mask member is fixed to the film-forming chamber by a mask frame so that the opening corresponds to the substrate, and in this state, film-forming gas is sprayed from a gas discharge part to the substrate. In this way, each thin film layer constituting multiple organic EL devices is formed on one substrate. The in-process organic EL device obtained in this way is divided into multiple pieces to manufacture multiple organic EL devices.

[0005] In this case, in order to manufacture as many organic EL devices as possible on one substrate, it is preferable to increase the size of the substrate, increase the aperture ratio of the mask member per unit area, and form the thin film close to the edge of the substrate.

[0006] However, when the substrate is enlarged, the size of the mask member must be increased accordingly. If the mask member becomes too large, the mask member itself may bend due to gravity, causing a problem of deformation of the opening shape. If such deformation of the opening occurs, the quality of the organic EL device corresponding to the vicinity of the opening edge may not be able to be maintained at a certain level or higher.

[0007] In addition, since the gas carrier type deposition apparatus delivers the thin film forming gas by the carrier gas, the thickness distribution of the thin film formed on the substrate often changes significantly compared to the deposition apparatus that sprays the thin film forming gas directly onto the substrate. That is, the gas carrier type deposition apparatus often has a wider base region where the film thickness is thin in the film thickness distribution compared to the deposition apparatus that sprays the thin film forming gas directly onto the substrate. Therefore, if the opening of the mask member is made large and the film is formed up to the edge of the substrate, the organic EL device corresponding to the edge will overlap with the base region where the film thickness is thin in the film thickness distribution. As a result, there is a problem that the quality of the organic EL device corresponding to the edge cannot be maintained at a certain level or higher.

[0008] Therefore, an object of the present invention is to provide a film forming apparatus in which the mask member is less likely to bend than in the past and in which differences in film thickness are less likely to occur depending on the film forming position. [Means for solving the problem]

[0009] One aspect of the present invention for solving the above-mentioned problems is a film formation apparatus having a substrate holding section, a gas emission section, and a mask unit, in which a film formation gas emitted from the gas emission section is restricted by the mask unit to form a thin film on a substrate held by the substrate holding section, the mask unit having a mask member and a mask frame, the film formation gas being a mixed gas of a thin film forming gas that forms the thin film and a carrier gas, when the thin film is formed on the substrate without providing the mask unit, the film thickness distribution of the thin film in a cross section passing through the center of the substrate has a normal distribution shape and has a base region that is greater than 0% and less than 5% of the maximum film thickness, and the mask frame has a mask support section that supports the mask member at a position that overlaps with the base region when viewed in a direction perpendicular to the substrate from the gas emission section side.

[0010] According to this aspect, since the mask support portion is provided in the base region where the concentration of the thin film forming gas is low and the effect on the film thickness distribution is small, the mask member is less likely to deform even if it is a large mask member, and the film forming gas is less likely to be blocked by the mask support portion. In other words, according to this aspect, the mask member is less likely to bend than in the conventional method, and film thickness differences are less likely to occur depending on the film forming position.

[0011] In a preferred aspect, the film thickness distribution of the thin film has a main region that is 50% or more of the maximum film thickness, and the mask support portion does not overlap with the main region when viewed in a direction perpendicular to the substrate from the gas release portion side.

[0012] According to this aspect, the main part of the deposition gas that mainly contributes to the film thickness can be sprayed onto the substrate without being blocked by the mask support part, and a high-quality thin film can be deposited.

[0013] In a preferred aspect, the mask member has an opening, and the opening overlaps with the main region when viewed from the gas releasing portion side in a direction perpendicular to the base material.

[0014] According to this aspect, a thin film is deposited that conforms to the shape of the opening by the main portion of the deposition gas that mainly contributes to the film thickness, so that the in-plane distribution of the film thickness can be reduced and a uniform thin film can be formed on the substrate.

[0015] In a preferred aspect, the gas discharge section and the substrate held by the substrate holding section are overlapped in the vertical direction, and the mask frame is positioned on the gas discharge section side with respect to the mask member.

[0016] In a more preferred aspect, the mask support portion supports the mask member from below in the vertical direction.

[0017] In a preferred aspect, the deposition gas contains the carrier gas at a ratio of 10% or more.

[0018] In a preferred aspect, the thin film has a thickness distribution in which the maximum thickness is 2.5 nm or more. Effect of the Invention

[0019] According to the film forming apparatus of the present invention, film thickness distribution is less likely to occur depending on the film forming position than in the conventional apparatus. [Brief description of the drawings]

[0020] [Figure 1] 1 is a configuration diagram that illustrates a vapor deposition device according to a first embodiment of the present invention. [Diagram 2] 2 is a perspective view showing a main part of the film forming unit in FIG. 1. [Diagram 3] FIG. 3 is an exploded perspective view of the mask unit of FIG. 2. [Figure 4] 3A and 3B are cross-sectional views of the mask unit in FIG. 2, where (a) shows the AA cross-section and (b) shows the BB cross-section. [Diagram 5] 3 is an explanatory diagram showing the positional relationship of the mask unit in Figure 2 with the substrate, (a) showing the relationship between the AA cross section in Figure 2 and the film thickness distribution of the thin film laminated on the substrate when the mask unit is not provided, and (b) showing the relationship between the BB cross section in Figure 2 and the film thickness distribution of the thin film laminated on the substrate when the mask unit is not provided. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0021] Hereinafter, an embodiment of the present invention will be described in detail.

[0022] The deposition apparatus 1 of the first embodiment of the present invention is a film formation apparatus that forms a thin film 101 on a substrate 100, and is a vacuum deposition apparatus equipped with a film formation section 2, a film formation gas supply section 3 (3a to 3c) (gas supply section), and gas supply flow paths 5a to 5c, as shown in FIG. Specifically, the deposition apparatus 1 is a gas carrier deposition apparatus that vaporizes or sublimes a thin film forming material in the gas generation section 30 of the film forming gas supply sections 3a to 3c to generate vapor of the thin film forming material (hereinafter also referred to as thin film forming gas), and sprays the film forming gas containing the thin film forming gas onto the substrate 100 in the film forming section 2 to deposit a thin film 101 that constitutes the organic EL device on the substrate 100. The deposition apparatus 1 is a deposition apparatus of a deposit-up type in which a film is formed by discharging a film-forming gas from the lower side to the upper side in the vertical direction in the film-forming section 2.

[0023] (Film forming department 2) As shown in Figure 1, the film formation section 2 is equipped with a film formation chamber 20, a substrate holding section 21, a mask unit 22, a gas discharge section 23, and an exhaust system section 25, and sprays a film formation gas from the gas discharge section 23 onto a substrate 100 arranged in the film formation chamber 20 to form a thin film 101 on the substrate 100.

[0024] (Base material holding part 21) The substrate holding section 21 is a section that holds the substrate 100 so that the surface of the substrate 100 on which the film is to be formed faces the gas releasing section 23 .

[0025] (Mask Unit 22) The mask unit 22 is a part that limits the area to be deposited on the substrate 100, and as shown in Figure 2, has multiple openings 42, and is a part that patterns the thin film 101 to be deposited on the substrate 100 by the opening shapes of the multiple openings 42. The mask unit 22 includes a mask frame 40 and a mask member 41, as shown in FIGS.

[0026] (Mask Frame 40) As shown in FIG. 3, the mask frame 40 is an annular member extending in a rectangular ring shape along the edge of the mask member 41, and is a support frame that supports the mask member 41 from below in the vertical direction. The mask frame 40 includes first extending portions 50 and 51 (mask supporting portions), second extending portions 52 and 53 (mask supporting portions), protruding portions 55 and 56 (mask supporting portions), and a support-side through-hole 57.

[0027] When viewed in a plane, the first extension portions 50, 51 are portions that have a width in the vertical direction Y (first direction, short side direction) and extend linearly in the horizontal direction X (a direction intersecting the first direction, which in this embodiment is a direction perpendicular to the first direction, the longitudinal direction). The first extension portions 50, 51 are disposed at a predetermined interval in the vertical direction Y and are parallel to each other.

[0028] The second extending portions 52 and 53 are portions that have a width in the horizontal direction X and extend linearly in the vertical direction Y when viewed in a plan view. The second extending portions 52, 53 are disposed at a predetermined interval in the lateral direction X and are parallel to each other.

[0029] The protruding portions 55, 56 are provided in the middle of the first extending portions 50, 51 in the longitudinal direction (horizontal direction X), and are claw-shaped protrusions extending from the first extending portions 50, 51 inward (toward the support-side through-hole 57). As shown in FIG. 4(a), the extension length of the extension portions 55, 56 gradually increases from the lower side (gas releasing portion 23 side) in the thickness direction (vertical direction) toward the upper side (substrate 100 side), and the cross-sectional area also increases. The protruding portions 55, 56 in this embodiment are provided in the center of the first extending portions 50, 51 in the longitudinal direction.

[0030] The support-side through-hole 57 is a substantially rectangular through-hole that penetrates the mask frame 40 in the thickness direction. The support-side through-hole 57 has an inner wall formed by the extensions 50-53. As shown in FIG. 4(b), the opening area of ​​the support-side through-hole 57 gradually decreases from the lower side (the gas releasing section 23 side) toward the upper side (the substrate 100 side).

[0031] (Mask member 41) As shown in FIG. 3, the mask member 41 is a rectangular plate-like body, and in this embodiment, has a horizontally elongated rectangular shape extending in the horizontal direction X. The mask member 41 includes a mask body 60 and one or more mask-side through-holes 61 .

[0032] The mask body 60 is a shielding part that blocks a part of the deposition gas discharged from the gas discharge port 105 of the gas discharge part 23 . As shown in FIG. 3, the mask body 60 includes a frame 70 and a rail 71.

[0033] As shown in FIG. 3, the frame 70 is a rectangular ring-shaped frame, and includes first frame portions 75 and 76 and second frame portions 77 and 78. The first frame portions 75 and 76 are horizontal frame portions that have a width in the vertical direction Y and extend linearly in the horizontal direction X when viewed in a plan view. The second frame portions 77, 78 are vertical frame portions that have a width in the horizontal direction X and extend linearly in the vertical direction Y when viewed in a plan view, and are connection frames that connect the ends of the first frame portions 75, 76 together.

[0034] As shown in FIG. 3, the crosspieces 71 are reinforcing crosspieces that reinforce the rigidity of the frame 70, and are portions that divide the inside of the frame 70 into a lattice shape. The crosspiece portion 71 is made up of first crosspiece portions 80a to 80c and second crosspiece portions 81a to 81d.

[0035] The first rails 80a to 80c are connecting rails that connect the middle parts of the second frame parts 77, 78, and are horizontal rails that have a width in the vertical direction Y and extend linearly in the horizontal direction X when viewed in a plan view. The first crosspieces 80a to 80c are arranged side by side in the vertical direction Y at intervals and parallel to one another. Of the first crosspieces 80a to 80c, the first crosspiece 80b on the central side preferably has a width greater than the other first crosspieces 80a, 80c.

[0036] The second rails 81a to 81d are connecting rails that connect the middle parts of the first frame parts 75, 76, and are vertical rails that have a width in the horizontal direction X and extend linearly in the vertical direction Y when viewed in a plan view. The second rails 81a to 81d are arranged side by side in the lateral direction X at intervals and parallel to one another. It is preferable that the second rail portions 81b, 81c on the central side of the second rail portions 81a to 81d are wider than the other second rail portions 81a, 81d. The intermediate portions of the second rail portions 81a to 81d intersect or cross over the intermediate portions of the first rail portions 80a to 80c at a level, and in this embodiment, they intersect at a level.

[0037] The mask side through-hole 61 is a hole having an opening 42 on one side, and is a quadrangular (square in this embodiment) through-hole that penetrates the mask body 60 in the thickness direction. The mask through-holes 61 are partitioned vertically and horizontally in a checkerboard pattern by the crosspieces 71 and are arranged at intervals from one another. The mask member 41 of this embodiment has a total of 20 mask-side through-holes 61, ie, five in the horizontal direction X and four in the vertical direction Y, and is more easily bent in the horizontal direction X than in the vertical direction Y.

[0038] (Gas discharge section 23) The gas ejection section 23 is a section that ejects a deposition gas onto the substrate 100, and is specifically a deposition head. As shown in FIG. 2, the gas release section 23 has one or more gas release ports 105 on the top surface (the surface facing the mask unit 22), and the gas release ports 105 face the substrate 100 held by the substrate holding section 21. The gas release ports 105 are configured to blow a deposition gas onto the substrate 100. The gas discharge part 23 of this embodiment has an internal space, and the film forming gases supplied from the film forming gas supply parts 3a to 3c are mixed in the space and can be sprayed from the gas discharge port 105.

[0039] (Exhaust system section 25) The exhaust system section 25 is a section that exhausts gas within the film deposition chamber 20 to the outside, and maintains the inside of the film deposition chamber 20 in a substantially vacuum state.

[0040] (film-forming gas supply section 3) The film forming gas supply unit 3 generates a film forming gas including a thin film forming gas, and supplies the film forming gas to the gas supply passages 5a to 5c. As shown in FIG. 1, the film forming gas supply unit 3 includes one or more gas generators 30, a carrier gas supply unit 31, a thin film forming gas connection path 32, and a carrier gas connection path 33.

[0041] (Gas generating section 30) The gas generating section 30 is a section that vaporizes or sublimes a thin film forming material to generate a material-containing gas that includes a thin film forming gas. The thin film forming material used in this embodiment is a powdery solid material at room temperature, and is an organic EL material that mainly constitutes the light emitting functional layer of the organic EL device.

[0042] (Carrier gas supply unit 31) The carrier gas supply unit 31 is a unit that supplies a carrier gas into the gas supply passages 5a to 5c, and adjusts the total flow rate of the film formation gas released from the gas release unit 23 to adjust the film formation speed. The carrier gas is an inert gas that does not react with the material-containing gas, and is preferably a rare gas such as nitrogen gas or argon gas, and more preferably argon gas.

[0043] (Thin film forming gas connection path 32) The thin film forming gas connection path 32 is a connecting pipe that is continuous with the gas supply flow path 5 and connects the gas generation unit 30 and the gas supply flow path 5, and is a part that constitutes the thin film forming gas supply flow path that guides the material-containing gas supplied from the gas generation unit 30 to the gas supply flow path 5.

[0044] (Carrier gas connection path 33) The carrier gas connection path 33 is a connecting pipe that connects the carrier gas supply unit 31 and the middle of the thin film formation gas connection path 32, and is a part that constitutes the carrier gas supply flow path that guides the carrier gas supplied from the carrier gas supply unit 31 to the gas supply flow path 5.

[0045] (Gas supply passage 5) The gas supply passage 5 connects the film production unit 2 and the film production gas supply unit 3, and is a passage for sending out a film production gas, which is a mixed gas of the material-containing gas and the third carrier gas, from the film production gas supply unit 3 to the film production unit 2.

[0046] Next, the positional relationship of each part of the vapor deposition apparatus 1 of this embodiment will be described. In particular, the positional relationship of each part of the mask unit 22 with respect to the film thickness distribution of the substrate 100 formed without providing the mask unit 22 in the vapor deposition apparatus 1 of this embodiment will be described.

[0047] As shown in Figure 1, the film forming section 2 of the deposition apparatus 1 has a gas emission section 23, a mask unit 22, and a substrate 100 held by a substrate holding section 21 stacked in this order in the vertical direction, and the mask frame 40 is positioned on the gas emission section 23 side with respect to the mask member 41.

[0048] In the deposition apparatus 1, in the deposition chamber 20 with a vacuum degree of 500 Pa or less, a deposition gas with a carrier gas ratio of 10% or more and 0.06 slm or more is used to deposit a thin film 101 on the substrate 100 so that the maximum film thickness is 20 nm without installing a mask unit 22. The film thickness distribution of the thin film 101 is as shown in Figure 5. That is, the film thickness distribution of the thin film 101 is normally distributed in each of the longitudinal section shown in FIG. 5(a) and the transverse section shown in FIG. 5(b), and the film thickness distribution of each thin film 101 has a main region 200 and a skirt region 201.

[0049] The main region 200 is a region where the thickness of the thin film 101 is 50% or more of the maximum thickness when the thin film 101 is formed on the substrate 100 without the mask unit 22, as shown in FIG.

[0050] 5, the skirt region 201 is a region surrounding the periphery of the main region 200, and is a region where the thickness of the thin film 101 will be more than 0% and not more than 5% of the maximum thickness when the thin film 101 is formed on the substrate 100 without providing the mask unit 22. That is, the skirt region 201 is a region where the thickness of the thin film 101 is smaller than that of the main region 200, and is a region where the thin film 101 is formed with a negligible thickness.

[0051] In the mask unit 22, a frame portion 70 of a mask member 41 is placed on a mask frame 40 as shown in FIG. Specifically, the mask member 41 has first frame portions 75, 76 placed on the first extension portions 50, 51 as shown in FIG. 4(a), and second frame portions 77, 78 placed on the second extension portions 52, 53 as shown in FIG. 4(b). In the mask member 41, each of the mask-side through-holes 61 is located inside the opening of the support-side through-hole 57 of the mask frame 40 when viewed from above. The first extension portions 50, 51 of the mask frame 40 are positioned so as to overlap with the skirt regions 201, 201 of the film thickness distribution of the thin film 101 when the thin film 101 is formed on the substrate 100 without providing the mask unit 22, as shown in Figure 5(a). Similarly, the second extension portions 52, 53 of the mask frame 40 are positioned so as to overlap with the base regions 201, 201 of the film thickness distribution of the thin film 101 when the thin film 101 is formed on the substrate 100 without providing the mask unit 22, as shown in Figure 5(b).

[0052] The projections 55, 56 of the mask frame 40 are located between the second rail portions 81b, 81c of the mask member 41 in the horizontal direction X and further outside the outermost mask side through-hole 61 in the vertical direction Y when viewed in a plan view. The protruding parts 55, 56 of the mask frame 40 are located at positions overlapping with the first frame parts 75, 76, and are located at the center in the extension direction of the first frame parts 75, 76. That is, the protruding parts 55, 56 of the mask frame 40 are provided at positions where the mask member 41 is most likely to bend in the lateral direction X, and support the mask member 41 from below in the vertical direction.

[0053] The protrusions 55, 56 of the mask frame 40 are positioned so as to overlap with the skirt regions 201, 201 of the film thickness distribution of the thin film 101 when the thin film 101 is deposited on the substrate 100 without providing the mask unit 22, as shown in Figure 5(a), and are positioned so as not to substantially block the deposition gas.

[0054] As shown in FIG. 4, each mask-side through-hole 61 of the mask member 41 communicates with the support-side through-hole 57 of the mask frame 40 in the thickness direction (overlapping direction) to form a communication hole through which the deposition gas can pass. Each mask side through hole 61 of the mask member 41 is arranged at a position overlapping with a main region 200 of the film thickness distribution of the thin film 101 when the thin film 101 is formed on the substrate 100 without providing a mask unit 22, as shown in FIG. That is, the mask through-holes 61 of the mask member 41 are not overlapped with the base regions 201, 201 as shown in FIG. 5, but are arranged at positions shifted from the base regions 201, 201.

[0055] According to the deposition apparatus 1 of the present embodiment, when the thin film 101 is deposited on the substrate 100 without the mask unit 22, the film thickness distribution of the thin film 101 in a cross section passing through the center of the substrate 100 is normal and has a skirt region 201 that is more than 0% and 5% or less of the maximum film thickness, and the mask frame 40 supports the mask member 41 at a position where the overhanging parts 55, 56 overlap the skirt region 201 when viewed in a direction perpendicular to the substrate 100 from the gas release part 23 side. Therefore, even if the mask member 41 is bent by gravity, the overhanging parts 55, 56 support the mask member 41 from below in the vertical direction, so that the mask member 41 is not easily deformed and the deposition gas is not easily blocked by the overhanging parts 55, 56. That is, according to the deposition apparatus 1 of the present embodiment, the mask member 41 is not easily bent as compared with the conventional apparatus, and the difference in film thickness is not easily generated depending on the deposition position.

[0056] According to the deposition apparatus 1 of this embodiment, the film thickness distribution of the thin film 101 has a main region 200 that is 50% or more of the maximum film thickness, and the overhanging parts 55, 56 do not overlap with the main region 200 when viewed from the gas release part 23 side in a direction perpendicular to the substrate 100. Therefore, the main part of the film formation gas can be sprayed onto the substrate 100 without being blocked by the overhanging parts 55, 56, and the film formation gas is less likely to be wasted.

[0057] According to the deposition apparatus 1 of the present embodiment, each opening 42 of the mask unit 22 overlaps with the main region 200 when viewed from the gas release section 23 side in a direction perpendicular to the substrate 100. Therefore, it is possible to reduce the distribution of the film thickness of the thin film 101 formed on the substrate 100 in accordance with the openings 42, and it is possible to form a uniform thin film 101 on the substrate 100.

[0058] According to the deposition apparatus 1 of the present embodiment, the gas releasing section 23 and the substrate 100 held by the substrate holding section 21 are overlapped in the vertical direction, and the mask frame 40 is located on the gas releasing section 23 side with respect to the mask member 41. Therefore, the mask member 41 is supported from below by the mask frame 40 and is unlikely to bend due to gravity.

[0059] In the embodiment described above, the mask member 41 has 20 mask side through holes 61, but the present invention is not limited to this. The mask member 41 may have 1 to 19 mask side through holes 61, or 21 or more mask side through holes 61.

[0060] In the above embodiment, the mask side through-hole 61 constitutes the opening 42 in a rectangular shape, but the present invention is not limited to this. It can be changed as appropriate depending on the shape of the thin film 101 to be formed. For example, the mask side through-hole 61 may constitute the opening 42 in a circular or polygonal shape such as a triangle, pentagon, or hexagon.

[0061] In the above embodiment, the mask frame 40 is directly attached to the film deposition chamber 20, but the present invention is not limited to this. As long as it can be positioned with respect to the substrate 100 and the gas releasing section 23, it does not have to be attached to the film deposition chamber 20.

[0062] In the above embodiment, the gas release section 23 has a plurality of gas release ports 105, and the plurality of gas release ports 105 are evenly distributed in a planar shape, but the present invention is not limited to this. The gas release section 23 may have one gas release port 105, or the plurality of gas release ports 105 may not be evenly distributed.

[0063] In the above embodiment, the protruding portions 55, 56 are provided on the first extending portions 50, 51 extending in the horizontal direction X, but the present invention is not limited to this. The protruding portions 55, 56 may be provided on the second extending portions 52, 53 extending in the vertical direction Y, or the protruding portions 55, 56 may be provided on both the first extending portions 50, 51 and the second extending portions 52, 53. Moreover, the protruding portions 55, 56 may be provided at the corners formed by the first extending portions 50, 51 and the second extending portions 52, 53.

[0064] In the above embodiment, the protrusions 55, 56 are provided at the same position in the lateral direction X, but the present invention is not limited to this. The protrusions 55, 56 may be shifted from each other in the lateral direction X.

[0065] In the above embodiment, the mask member 41 has a horizontally long rectangular shape, but the present invention is not limited to this. The mask member 41 may have a vertically long rectangular shape or a square shape.

[0066] In the above embodiment, the protruding portions 55, 56 are located between the second crosspiece portions 81b, 81c of the mask member 41 in the horizontal direction X in plan view and further outside the outermost mask-side through-hole 61 in the vertical direction Y, but the present invention is not limited to this. The protruding portions 55, 56 may be located at positions overlapping the second crosspiece portions 81b and / or the second crosspiece portions 81c of the mask member 41 in the horizontal direction X in plan view. In this case, the protruding portions 55, 56 may protrude inward from the outermost mask-side through-hole 61 in the vertical direction Y.

[0067] In the above embodiment, the first extending portions 50, 51 are each provided with one overhanging portion 55, 56, and the mask member 41 is supported by the pair of overhanging portions 55, 56, but the present invention is not limited to this. The extending portions 50, 51 may each be provided with a plurality of overhanging portions 55, 56.

[0068] In the above-described embodiment, the protruding portions 55, 56 are protrusions whose length in the vertical direction Y is longer than that in the horizontal direction X, but the present invention is not limited to this. The protruding portions 55, 56 may be protruding portions extending in the horizontal direction X.

[0069] In the above-described embodiments, each component may be freely substituted or added between the respective embodiments as long as it falls within the technical scope of the present invention. [Explanation of symbols]

[0070] 1 Vapor deposition equipment (film forming equipment) 21 Base material holding part 22 Mask Unit 23 Gas release section 40 Mask Frame 41 Mask material 42 Opening 50, 51 First extension portion (mask support portion) 52, 53 Second extension part (mask support part) 55,56 Protruding part (mask support part) 100 Base material 200 main areas 201 Foothills Area

Claims

1. A film forming apparatus having a substrate holding section, a gas emission section, and a mask unit, in which a film forming gas emitted from the gas emission section is restricted by the mask unit, and a thin film is formed on a substrate held by the substrate holding section, The mask unit includes a mask member and a mask frame. the deposition gas is a mixed gas of a thin film forming gas for forming the thin film and a carrier gas, when the thin film is formed on the substrate without providing the mask unit, the film thickness distribution of the thin film in a cross section passing through a center of the substrate has a normal distribution and has a base region that is greater than 0% and less than 5% of the maximum film thickness, The mask frame is provided with a mask support portion that supports the mask member at a position that overlaps with the base region when viewed in a direction perpendicular to the substrate from the gas ejection portion side.

2. the film thickness distribution of the thin film has a main region where the film thickness is 50% or more of the maximum film thickness; The film forming apparatus according to claim 1 , wherein the mask support portion does not overlap the main region when viewed from the gas ejection portion side in a direction perpendicular to the substrate.

3. The mask member has an opening, The film forming apparatus according to claim 2 , wherein the opening overlaps with the main region when viewed from the gas releasing portion side in a direction perpendicular to the substrate.

4. the gas discharge section and the substrate held by the substrate holding section are overlapped in a vertical direction, 4. The film forming apparatus according to claim 1, wherein the mask frame is located on the gas ejection portion side with respect to the mask member.

5. The film forming apparatus according to claim 4 , wherein the mask support portion supports the mask member from a lower side in a vertical direction.

6. 4. The film forming apparatus according to claim 1, wherein the film forming gas contains the carrier gas at a ratio of 10% or more.

7. 4. The film forming apparatus according to claim 1, wherein the thin film has a film thickness distribution in which the maximum film thickness is 2.5 nm or more.

Images