Gas box for semiconductor processing chamber

Abstract

To provide a semiconductor processing chamber gas box and a semiconductor processing chamber, which can be used for manufacturing a high-quality device and structure.SOLUTION: A semiconductor processing chamber 300 includes a gas box 325 including a first plate 330 which has a first front surface 331 and a second front surface 332 on the side opposite to the first front surface. The first plate of the gas box defines a center open hole 322 extended from the first front surface to the second front surface, defines an annular concave part 335 to the second front surface, and defines a plurality of open holes 337 that is extended to the annular concave part of the second front surface from the first front surface. The gas box includes a second plate 340 having an annular shape as a characteristic, and the second plate is coupled to the first plate in the annular concave part, and defines a first plenum in the first plate.SELECTED DRAWING: Figure 3

Description

[Technical field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. Non-Provisional Application No. 17 / 077,674, filed October 22, 2020, and entitled “GASBOX FOR SEMICONDUCTOR PROCESSING CHAMBER,” the contents of which are incorporated herein by reference in their entirety for all purposes.

[0002] Technical Field

[0002] The present technology relates to components and equipment for semiconductor manufacturing. More particularly, the present technology relates to processing chamber distribution components and other semiconductor processing equipment. [Background technology]

[0003] background

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of materials on a substrate surface. Fabricating patterned materials on a substrate requires controlled methods for forming and removing materials. Chamber components often deliver process gases to the substrate for film deposition or material removal. To promote symmetry and uniformity, many chamber components may include regular patterns of features, such as apertures, to deliver materials in a manner that enhances uniformity. However, this may limit the ability to tune the recipe for on-wafer adjustments.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to manufacture high quality devices and structures. These and other needs are addressed by the present technique. Summary of the Invention

[0005] An exemplary semiconductor processing chamber can include a gas box including a first plate having a first surface and a second surface opposite the first surface. The first plate of the gas box can define a central aperture extending from the first surface to the second surface. The first plate can define an annular recess in the second surface. The first plate can define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gas box can include a second plate characterized by an annular shape. The second plate can be coupled with the first plate at the annular recess to define a first plenum within the first plate.

[0006] In some embodiments, the first plate further defines a recessed channel in the first surface of the first plate. The recessed channel can extend around the central aperture. The recessed channel can extend from a first location to a plurality of second locations that fluidly access the plurality of apertures extending from the first surface of the first plate. The gas box can further include a cover plate covering the recessed channel and forming a second plenum in the first plate. The annular recess defined in the second surface can include a stepped recess. The second plate can interface with the stepped feature of the annular recess. The second plate can define a plurality of outlet apertures that provide fluid access from the first plenum. The first plate can define an annular channel extending through the first plate around the central aperture. The first plate can define a plurality of lateral channels extending from the annular channel to an outer edge of the gas box of the semiconductor processing chamber. The lateral channel may not intersect any of the plurality of apertures extending through the first plate. The first plate may define a plurality of bypass apertures extending from the lateral channel through a second surface of the gas box of the semiconductor processing chamber.

[0007] Some embodiments of the present technology may include a semiconductor processing chamber including a manifold providing fluid access to the chamber for a plurality of fluids. The chamber may include a gas box including a first plate having a first surface and a second surface opposite the first surface. The first plate may define a central aperture extending from the first surface to the second surface. The first plate may define an annular recess in the second surface. The first plate may define a plurality of apertures extending from the first surface to the annular recess in the second surface. The gas box may include a second plate characterized by an annular shape. The second plate may be coupled to the first plate at the annular recess to define a first plenum within the first plate.

[0008] In some embodiments, the manifold can include an interior zone coupled to the first fluid supply channel. The manifold can include an exterior zone extending around the interior zone and fluidically isolated from the interior zone. The exterior zone can be coupled to the second fluid supply channel. The first plate can define an annular channel extending through the first plate and around the central aperture. The annular channel can be fluidly coupled to the exterior zone of the manifold. The first plate can define a recessed channel in a first surface of the first plate. The recessed channel can extend around the central aperture. The recessed channel can extend from a first location to a plurality of second locations that fluidly access the plurality of apertures extending from the first surface of the first plate. The chamber can include a cover plate covering the recessed channel and forming a second plenum in the first plate. The system can include a substrate support. The system can include a blocker plate positioned between the gas box and the substrate support. A first region can be defined between the gas box and the blocker plate. The first region can be fluidly accessible from a central aperture and a plurality of peripheral apertures. The system can include a face plate, which can be positioned between the blocker plate and the substrate support. A second region can be defined between the blocker plate and the face plate. The second region can be fluidly accessible from a lateral channel extending through the gas box.

[0009]

[0009] Such techniques may provide many advantages over conventional systems and techniques. For example, embodiments of the present techniques may enable controlled dilution and distribution of precursors across the inner and outer regions of the substrate. Additionally, the chambers and components may enable providing various ratios of precursors and inert gases to the inner and outer regions of the substrate. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0010] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and drawings. [Brief description of the drawings]

[0011] [Figure 1] 1 illustrates a top view of an exemplary processing system in accordance with some embodiments of the present technique. [Diagram 2]

[0012] 1 shows a schematic cross-sectional view of an exemplary plasma system in accordance with some embodiments of the present technique. [Diagram 3]

[0013] 1 shows a schematic partial cross-sectional view of an exemplary semiconductor processing chamber in accordance with some embodiments of the present technique. [Figure 4]

[0014] 1 illustrates a schematic top plan view of an exemplary gas box, in accordance with certain embodiments of the present technique. [Figure 5A-5B]

[0015] 5A and 5B show schematic cross-sectional views of an exemplary substrate in accordance with some embodiments of the present technique. [Figure 6]

[0016] FIG. 1 shows a schematic diagram of an exemplary gas box plate, in accordance with certain embodiments of the present technique. [Figure 7]

[0017] 7 shows a schematic partial perspective view of an exemplary output manifold 700, in accordance with some embodiments of the present technology. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0012]

[0018] Some of the figures are included as schematic diagrams. It is understood that these figures are for illustrative purposes and should not be considered to be to scale unless specifically stated to be to scale. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0013]

[0019] In the accompanying figures, similar components and / or features may have the same reference label. Furthermore, various components of the same type may be distinguished by tracing the reference numbers with a letter that distinguishes the similar components. If only a first reference number is used in this specification, the description is applicable to any one of the similar components having the same first reference number, regardless of the letter.

[0014]

[0020] A plasma enhanced deposition process can energize one or more constituent precursors to facilitate film formation on a substrate. Any number of material films can be produced to develop semiconductor structures, including conductive and dielectric films, as well as films that facilitate material transport and removal. For example, hard mask films can be formed to facilitate substrate patterning while protecting otherwise preserved underlying materials. In many processing chambers, several precursors can be mixed in a gas panel and delivered to the processing region of the chamber where the substrate may be placed. The precursors can be distributed through one or more components in the chamber, which can result in uniform radial or lateral delivery and increased formation or removal at the substrate surface.

[0015]

[0021] As device features shrink in size, tolerances across the substrate surface can decrease, and differences in material properties across the film can affect device realization and uniformity. Many chambers contain characteristic process signatures that can result in non-uniformity across the substrate. Temperature differences, uniformity of flow patterns, and other aspects of processing can affect the film on the substrate, resulting in differences in film properties as well as differences across the substrate in the material that is created or removed. Tailoring processes at different regions of the substrate, such as in-plane distortion issues and other film property issues, can be difficult to remedy with uniform delivery chamber components, and many conventional techniques may have limited tuning available or require the fabrication of specialized components.

[0016]

[0022] The present technology overcomes these challenges by utilizing one or more chamber components that can facilitate supply adjustment, can increase or decrease the supply of precursors, such as by dilution with precursors or inerts, or can provide a means to adjust the film material based on the inclusion or adjustment of additional precursors, thus resulting in improved film formation and removal, as well as improved film properties.

[0017]

[0023] While the remaining disclosure routinely identifies a particular deposition process utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers and processes that may occur in the described chambers. Thus, the technology should not be considered limited for use with only these particular deposition processes or chambers. This disclosure discusses one possible system and chamber that may include lid stack components according to embodiments of the present technology before additional modifications and adjustments to this system according to embodiments of the present technology are described.

[0018]

[0024] FIG. 1 illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber processing system 100 according to an embodiment. In the figure, a pair of front-opening integrated pods 102 deliver substrates of various sizes that are received by a robotic arm 104 and placed in one of the substrate processing chambers 108a-f and placed in a low pressure holding area 106 before being positioned in the tandem sections 109a-c. A second robotic arm 110 can be used to transport substrate wafers from the holding area 106 to and back from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f can be equipped to perform a number of substrate processing operations in addition to plasma enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, alignment, and other substrate processing including annealing, ashing, and the like.

[0019]

[0025] The substrate processing chambers 108a-f may include one or more system components for depositing, annealing, curing and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers, e.g., 108c-d and 108e-f, may be used to deposit a dielectric material on a substrate, and a third pair of processing chambers, e.g., 108a-b, may be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, may be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes may be performed in chambers separate from the fabrication system shown in different embodiments. It should be understood that additional configurations of deposition, etching, annealing and curing chambers for dielectric films are contemplated by the system 100.

[0020]

[0026] 2 illustrates a schematic cross-sectional view of an exemplary plasma system 200 in accordance with some embodiments of the present technique. The plasma system 200 may be adapted to one or more of the tandem sections 109 described above and may include a pair of processing chambers 108 that may include a substrate support assembly in accordance with embodiments of the present technique. The plasma system 200 may generally include a chamber body 202 having a sidewall 212, a bottom wall 216, and an interior sidewall 201 that define a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and may include identical components.

[0021]

[0027] For example, processing region 220B, whose components may be included in processing region 220A, may include a pedestal 228 disposed in the processing region through a passageway 222 formed in the bottom wall 216 of the plasma system 200. The pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. The pedestal 228 may include a heating element 232, such as a resistive heating element, that may heat and control the substrate temperature at a desired processing temperature. The pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device.

[0022]

[0028] The body of the pedestal 228 can be coupled to the stem 226 by a flange 233. The stem 226 can electrically couple the pedestal 228 to a power outlet or power box 203. The power box 203 can include a drive system to control the elevation and movement of the pedestal 228 within the processing region 220B. The stem 226 can also include a power interface for providing power to the pedestal 228. The power box 203 can also include an interface for power and temperature indicators, such as a thermocouple interface. The stem 226 can include a base assembly 238 adapted to removably couple with the power box 203. A circumferential ring 235 is shown on the power box 203. In some embodiments, the circumferential ring 235 can be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the top surface of the power box 203.

[0023]

[0029] The rod 230 may be included through a passage 224 formed in the bottom wall 216 of the processing region 220B and may also be utilized to position substrate lift pins 261 disposed through the body of the pedestal 228. The substrate lift pins 261 may selectively move the substrate 229 away from the pedestal to facilitate exchange of the substrate 229 with a robot utilized to move the substrate 229 into and out of the processing region 220B through the substrate transfer port 260.

[0024]

[0030] A chamber lid 204 may be coupled to the top of the chamber body 202. The lid 204 may house one or more precursor delivery systems 208 coupled thereto. The precursor delivery system 208 may include a precursor inlet passage 240 that may deliver reactant and cleaning precursors into the processing region 220B via a dual channel showerhead 218. The dual channel showerhead 218 may include an annular base plate 248 having a blocker plate 244 disposed intermediate a faceplate 246. A radio frequency ("RF") source 265 may be coupled to the dual channel showerhead 218, which may provide power to the dual channel showerhead 218 to facilitate generation of a plasma region between the faceplate 246 and the pedestal 228 of the dual channel showerhead 218. In some embodiments, the RF source may be coupled to other portions of the chamber body 202, such as the pedestal 228, to facilitate plasma generation. A dielectric isolator 258 can be disposed between the lid 204 and the dual channel showerhead 218 to prevent RF power from being conducted to the lid 204. The shadow ring 206 can be disposed around the pedestal 228 in engagement with the pedestal 228.

[0025]

[0031] Optional cooling channels 247 can be formed in the annular base plate 248 of the precursor delivery system 208 to cool the annular base plate 248 during operation. A heat transfer fluid, such as water, ethylene glycol, gas, etc., can be circulated through the cooling channels 247 so that the base plate 248 can be maintained at a predetermined temperature. A liner assembly 227 can be positioned in the processing region 220B proximate to the sidewalls 201, 212 of the chamber body 202 to prevent exposure of the sidewalls 201, 212 to the processing environment in the processing region 220B. The liner assembly 227 can include a circumferential pumping cavity 225 that can be coupled to a pumping system 264 configured to exhaust gases and byproducts from the processing region 220B and control the pressure in the processing region 220B. A number of exhaust ports 231 can be formed on the liner assembly 227. The exhaust ports 231 can be configured to allow a flow of gas from the processing region 220B to the circumferential pumping cavity 225 in a manner that facilitates processing in the system 200.

[0026]

[0032] FIG. 3 illustrates a schematic partial cross-sectional view of an exemplary semiconductor processing chamber 300 according to some embodiments of the present technique. FIG. 3 may include one or more components discussed above with respect to FIG. 2 and may illustrate further details related to the chamber. It is understood that the chamber 300 includes any of the features or aspects of the system 200 described above in some embodiments. The chamber 300 may be used to perform semiconductor processing operations including deposition of hard mask materials as described above, as well as other deposition, removal, and cleaning operations. It is understood that the chamber 300 may illustrate a partial view of a processing region of a semiconductor processing system and may not include all of the components, such as a remote plasma unit as described above, incorporated in some embodiments of the chamber 300.

[0027]

[0033] As mentioned above, FIG. 3 may show a portion of a processing chamber 300. The chamber 300 may include multiple lid stack components that may facilitate the supply or distribution of materials through the processing chamber, for example, to a processing region 305 where a substrate 306 may be positioned on a substrate support or pedestal 310. A chamber lid plate may extend across one or more plates of the lid stack and may provide structural support to components such as a remote plasma unit as previously described for the system 200. The lid plate may provide access to an interior region of the processing chamber 300, for example, through apertures. An output manifold 320 may be positioned on or associated with a gas box and may provide a connection to a remote plasma unit, which may provide precursors or plasma effluents for cleaning or other processing operations of the chamber. The output manifold 320 may define a central aperture 322 that extends around a central axis of the chamber or output manifold. Additionally, a separate bypass 317 may be included, which in some embodiments may provide access to a cleaning gas or flow from an RPS. The processing chamber 300 may also include a gas box 325 upon which one or more components may be positioned.

[0028]

[0034] The gas box 325 can be characterized by a first plate 330 having a first surface 331 and a second surface 332 that can be opposite the first surface. The first plate of the gas box can define a central aperture 333 that extends completely through the gas box from the first surface to the second surface. The central aperture 333 can be axially aligned with a central aperture of the output manifold 320 and can be axially aligned with a central aperture of an insulator or any other component that provides a fluid path to the chamber. The aperture can define a channel that can be used at least in part to deliver precursors or plasma effluents from a remote plasma unit positioned on the output manifold. The first plate 330 can also define an annular recess 335 in the second surface of the gas box. In some embodiments, the recess can be a stepped recess as shown, which can allow for the connection of a second plate 340 that can rest on a ledge defined within the recess. This connection can create a first plenum in the first plate of the gas box, which can be an annular plenum that enables uniform distribution of material into the processing chamber.

[0029]

[0035] The first plate of the gas box may also define a number of apertures 337 extending from the first surface of the first plate to the annular recess in the second surface of the first plate. As described below, the apertures may provide additional fluid paths for precursors or inert gases to be delivered into the chamber. The first plate 330 may also define a recessed channel 342 in the first surface of the first plate. As described further below, the recessed channel 342 may extend around the central aperture 333 in one or more ways in some embodiments of the present technology. In some embodiments, the gas box may include a cover plate 344 that covers the recessed channel 342, thereby creating a second plenum in the first plate. The cover plate 344 may be formed to seat within the channel and may be welded or bonded onto a ledge or feature of the recessed channel, thereby allowing the second plenum to be sealed off with a single inlet location, which may have multiple outlet locations, such as through multiple apertures, as described further below. The first plenum can be fluidly accessible to the second plenum via an aperture 337 extending through the plate. The first plate 330 can also define an annular channel 346 that extends through the first plate and around the central aperture.

[0030]

[0036] The semiconductor processing chamber 300 may also include additional components such as a blocker plate 350 and a face plate 355 in some embodiments. The blocker plate 350 may define a number of apertures that may act as chokes to increase radial diffusion to improve delivery uniformity. The blocker plate 350 may be a first location through the lid stack where precursors delivered to the central aperture of the gas box and precursors delivered through the plenum of the gas box mix. As shown, a region 352 may be formed or defined between the gas box 325 and the blocker plate 350. The region 352 may be fluidly accessible from both the central aperture 333 and a number of exit apertures defined in the second plate 340 that may provide fluid access from the plenum or annular recess 335 of the first plate. The precursors delivered within the zone may then at least partially mix or overlap before continuing through the lid stack. By allowing an amount of mixing prior to contacting the substrate surface, an amount of overlap may be provided, which can result in a smoother transition at the substrate and limit the formation of interfaces on the film or substrate surface. The face plate 355 can then deliver precursors to a processing region, which can be at least partially defined from above by the face plate. The face plate 355 can also define an exterior zone between the gas box and the face plate, allowing lateral channels in the gas box to deliver materials to the zone, such as for cleaning operations, as described below.

[0031]

[0037] To provide additional precursor flow paths through the annular channel, additional components can also be incorporated to facilitate operation. For example, isolators can be included to isolate the connection components from the gas box. The gas box 325 can be electrically coupled to the face plate 355, which can be utilized as a plasma generation electrode. In some embodiments, a component of the lid stack can operate as a plasma generation electrode, such as a hot electrode. Thus, feed components that may be electrically grounded can benefit from an isolator that isolates the associated component from the gas box. Isolation valves can also be included in the system, and can be included between the piping from the gas panel and the chamber. The valves can prevent material from backflowing into the fluid lines during processing operations where additional fluids may not flow through the annular channel into the processing region.

[0032]

[0038] Referring to FIG. 4, a schematic top view of an exemplary gas box 400 according to some embodiments of the present technique is shown. The gas box 400 is an example of the gas box 325 shown in FIG. 3 and may include any of the features, components, or characteristics of that gas box, such as the top view of the first plate described above. The gas box 400 may define a central aperture 410 extending through the entire gas box to allow fluid access into the chamber. A second feed location 415 may be defined to provide fluid access to a recessed channel 420, which may include a cover plate as described above to form a plenum, and may provide fluid access to multiple radially outer locations on the gas box, or the first plate of the gas box as shown. The location of the aperture 412 may provide fluid access to multiple apertures extending through the gas box into a plenum formed between the second surface of the first plate of the gas box and the second plate of the gas box. As previously described, in some embodiments, a single inlet aperture may be used to distribute one or more precursors into the recessed channels formed in the first surface 405 of the gas box. An annular channel 425 may also be formed in the gas box extending around the central aperture to provide additional fluids or materials into the chamber as described further below. In some embodiments, additional flow features may be formed in the gas box to increase the number of locations where precursors can be delivered into the annular channel. It should be understood that the illustrated exemplary configuration is not intended to be limited to any type of return flow path or outwardly extending flow paths for distributing one or more precursors prior to delivering the precursors to the multiple apertures, and any number of modifications are encompassed by the present technology as well.

[0033]

[0039] The recessed channel shown may represent a comprehensive example of a conductance path for the delivered precursor, which may represent a return flow path as described above, and may extend radially outward to multiple apertures, or may extend in a controlled pattern to radially distribute the precursor to multiple delivery locations into the first plenum. For example, a first recessed channel 420 may be defined on the first surface 405 of the first plate. Apertures through the manifold and apertures through a cover plate on the recessed channel may access the recessed channel 420 near the center or midpoint of the channel at location 415, which may allow the delivered precursor to move in two directions along the channel. For example, in some embodiments, the recessed channel 420 may be a bidirectional channel defined in a plate or gas box, which may distribute the delivered precursor in two directions, radially or laterally outward from the location where the precursor is delivered to the plate.

[0034]

[0040] The recessed channels 420 may extend to two or more distal ends, each of which may access additional bidirectional channels as shown in one embodiment, although the channels may extend to more or fewer channels, including a third bidirectional channel that provides access to multiple apertures through the gas box. As shown, the distribution at the first distal end of the first recessed channels 420 may provide access to two second recessed channels 422, which may be second bidirectional channels as shown. Additionally, the distribution at the distal end of the second recessed channels 422 may provide access to a set of third recessed channels 424, which may be third bidirectional channels as shown. While four such additional channels are shown, it should be understood that any number of channels may be included in embodiments of the present technology, such as 2, 3, 4, 6, 8, or more channels.

[0035]

[0041] The second and third channels may have similar or different configurations and may be radial or transverse channels in various embodiments. The second 422 and third 424 concave channels may each distribute from a midpoint where the channel receives a feed from a previous concave channel where the previous channel connects to the channel. As shown, the two distal ends of the third concave channel may have an aperture 412 defined therein, which may be one aperture of a plurality of apertures defined through the gas box as previously described, and may provide fluid access to a first plenum defined in the gas box at the second surface as previously described. Any number of apertures may be defined to provide a more uniform feed. Although the apertures are shown aligned with apertures at the opposite distal ends of the concave channels, in some embodiments the apertures 412 may be offset at different radial positions. The inclusion of additional precursor feed paths through the lid stack or components of the present technology may enable many process improvements. Wafer thickness uniformity, material composition, and film properties can be further tailored to improve processing, limit in-plane or other distortions, and control film properties across the substrate.

[0036]

[0042] 5A and 5B show schematic partial cross-sectional views of an exemplary gas box 400 according to some embodiments of the present technology, which may show cross-sectional views along lines A and B of the gas box 400 shown in FIG. 4, respectively. As described above, the gas box 400 may be included in any of the chambers described above and may include any of the features, components, or characteristics described above. For example, the gas box 400 shown in FIG. 5A may include a first plate 505, which may define a number of features as described above. The gas box may define a central aperture 410 extending from a first surface 405 to a second surface 507 of the first plate of the gas box, which in some embodiments may define the overall height of the gas box, as the second plate 510 may be recessed into the first plate 505 as shown. The first plate 505 may define an annular channel 425 extending around the central aperture, which may provide additional flow paths as described below. Additionally, a number of apertures 515 can be defined through the first plate to provide fluid access from the recessed channel 520 to the first plenum 525. As shown, the first plate 505 can define a stepped recess in a second surface of the plate, which allows the second plate 510 to be recessed into the plate while allowing for the formation of the plenum 525, which may be an annular channel for providing fluid around the gas box.

[0037]

[0043] Referring to FIG. 5B, another partial cross-sectional view of the gas box 400 through line B is shown, which may not intersect any of the apertures 515 extending through the gas box. As shown, a central aperture 410 may be formed through the first plate 505 of the gas box, and an annular channel 425 may be formed around the central aperture. As shown in this figure, multiple lateral channels 530 may be formed extending from the annular channel 425 to the outer edge of the gas box, which may provide access to different zones of the faceplate, as described above. Any number of lateral channels 425 may be formed in the gas box, and the lateral channels 425 may be formed between a plurality of apertures that extend perpendicularly through the gas box at right angles to the lateral channels. The lateral channels may not intersect any of the apertures of the plurality of apertures extending through the first plate, in some embodiments. The lateral channels may also extend between the first surface of the first plate and a plenum 525 formed in the first plate. As shown, multiple bypass apertures 535 may also be formed to provide fluid access from the lateral channels through the second surface 507 of the first plate. Any number of bypass apertures may be formed from each lateral channel, and the bypass apertures may be formed between the central aperture 410 and plenum 525, which is an annular plenum located radially outward of the bypass apertures.

[0038]

[0044] FIG. 6 shows a schematic diagram of an exemplary gas box plate according to some embodiments of the present technology, and may show the second plate previously described. The second plate 600 may be an annular plate and may be placed in a recess in the first plate of the gas box as described above. The second plate 600 may be coupled to the first plate in any number of ways and may define a number of outlet apertures 605 that provide fluid access from the first plenum. As shown, the outlet apertures 605 may be formed around the second plate 600 in any number of patterns to provide or direct flow from the plenum formed in the gas box. While the outlet apertures 605 are shown as being of similar size with a uniform distribution, it should be understood that the outlet apertures 605 may be formed in any manner. For example, some apertures may be skipped or spaced further apart, such as adjacent to any of the apertures extending through the gas box, thereby restricting the direct flow path from the apertures through the gas box and instead directing flow through the plenum. Additionally, the apertures may be of different sizes around the second plate. For example, apertures through a first plate close to the location where they supply fluid may be smaller than other apertures, thereby ensuring more uniform flow or conductance through each outlet aperture of the second plate in embodiments of the present technology.

[0039]

[0045] FIG. 7 shows a schematic perspective view of an exemplary output manifold 700 according to some embodiments of the present technique. The output manifold 700 can include any of the features or characteristics of the manifolds described above and can be used with any of the processing chambers described above. The output manifold 700 can provide fluid access to the processing chamber by delivering one or more precursors or fluids to a gas box. The manifold can define a first channel 705 configured to provide a first flow path for one or more precursors. The manifold can define a second flow path 710 that extends into an interior zone 715 of the output manifold and can deliver the precursors or fluids to a central aperture of the gas box. The first channel 705 can intersect with the second channel 710 within the manifold, which can allow an inert precursor or one or more processing precursors to begin mixing prior to delivery to the interior zone 715 and delivery to the processing chamber.

[0040]

[0046] A third channel 720 may be formed that can supply one or more bypass precursors to the recessed channel of the gas box. As previously described, from a single entry location, precursors may be distributed in a retro-retrospective pattern. This can provide supply at a single location offset from the central location and still be used to provide uniform supply to the substrate processing chamber. Additionally, a fourth channel 725 may be formed through the output manifold to supply precursors from a remote plasma unit or the like, which can be used for cleaning operations or other processes. The fourth channel 725 can supply material to the exterior zone 730 and can provide fluid access to an annular channel defined around the central aperture of the gas box. The exterior zone 730 is fluidly isolated from the interior zone 715 and can limit backflow of precursors or plasma effluents into any of the other respective channels of the output manifold. By utilizing chamber components according to embodiments of the present technology, precursors can be supplied into the processing chamber using multiple flow paths, which can regulate deposition around the area of ​​the substrate being processed.

[0041]

[0047] In the foregoing description, for purposes of explanation, numerous details are set forth in order to provide an understanding of various embodiments of the present technology. However, it will be apparent to one skilled in the art that certain embodiments may be practiced without some of these details, or with additional details.

[0042]

[0048] Although several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Moreover, in order to avoid unnecessarily obscuring the technology of the present invention, many well-known processes and elements have not been described. Thus, the above description should not be interpreted as limiting the scope of the technology.

[0043]

[0049] Where a range of values ​​is presented, unless the context clearly dictates otherwise, it is understood that each intervening value between the upper and lower limits of that range is also specifically disclosed to the smallest unit of the unit of the lower limit. Any narrower range between any stated or unstated intervening value in a stated range, as well as any other stated or intervening value in that stated range, are also encompassed. The upper and lower limits of these smaller ranges may be individually included or excluded in the range, and each range in which either, neither, or both limits are included in the narrower range is also encompassed within the technology, subject to the specifically excluded limit in the stated range. Where a stated range includes one or both of the limits, ranges excluding either or both of the included limits are also included.

[0044]

[0050] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly indicates otherwise. Thus, for example, reference to a "channel" includes a plurality of such channels, reference to an "aperture" includes a reference to one or more apertures and equivalents thereof known to those skilled in the art, and so forth.

[0045]

[0051] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. a first plate having a first surface and a second surface opposite the first surface, defining a central aperture extending from said first surface to said second surface; defining an annular recess in said second surface; the first plate defining a plurality of apertures extending from the first surface to an annular recess in the second surface; a second plate characterized by an annular shape, the second plate being coupled to the first plate at the annular recess to define a first plenum within the first plate; 1. A semiconductor processing chamber gas box comprising:

2. 2. The semiconductor processing chamber gas box of claim 1, wherein said first plate further defines a recessed channel in said first surface of said first plate, said recessed channel extending around said central aperture.

3. 3. The semiconductor processing chamber gas box of claim 2, wherein the recessed channel extends from a first location to a plurality of second locations that fluidly access the plurality of apertures extending from the first surface of the first plate.

4. 4. The semiconductor processing chamber gas box of claim 3, further comprising a cover plate covering said recessed channel and forming a second plenum within said first plate.

5. 2. The semiconductor processing chamber gas box of claim 1, wherein the annular recess defined in the second surface includes a stepped recess, and the second plate is coupled with a stepped feature of the annular recess.

6. 2. The semiconductor processing chamber gas box of claim 1, wherein said second plate defines a plurality of exit apertures providing fluid access from said first plenum.

7. 2. The semiconductor processing chamber gas box of claim 1, wherein said first plate further defines an annular channel extending through said first plate and around said central aperture.

8. 8. The semiconductor processing chamber gas box of claim 7, wherein said first plate further defines a plurality of lateral channels extending from said annular channel to an outer edge of said semiconductor processing chamber gas box.

9. 8. The semiconductor processing chamber gas box of claim 7, wherein said lateral channels do not intersect any of said plurality of apertures extending through said first plate.

10. 8. The semiconductor processing chamber gas box of claim 7, wherein said first plate further defines a plurality of bypass apertures extending from said lateral channels through said second surface of said semiconductor processing chamber gas box.

11. a manifold providing fluid access to a plurality of fluid chambers; a first plate having a first surface and a second surface opposite the first surface, defining a central aperture extending from said first surface to said second surface; defining an annular recess in said second surface; defining a plurality of apertures extending from said first surface to an annular recess in said second surface; the first plate, and a second plate characterized by an annular shape, the second plate being coupled to the first plate at the annular recess to define a first plenum within the first plate; a gas box including:

1. A semiconductor processing chamber comprising:

12. The semiconductor processing chamber of claim 11 , wherein the manifold includes an interior zone coupled to a first fluid supply channel.

13. 13. The semiconductor processing chamber of claim 12, wherein the manifold includes an exterior zone extending around and fluidly isolated from the interior zone and coupled to the second fluid supply channel.

14. 14. The semiconductor processing chamber of claim 13, wherein the first plate further defines an annular channel extending around the central aperture through the first plate and in fluid communication with the exterior zone of the manifold.

15. The semiconductor processing chamber of claim 11 , wherein the first plate further defines a recessed channel in the first surface of the first plate, the recessed channel extending around the central aperture.

16. 16. The semiconductor processing chamber of claim 15, wherein the recessed channel extends from a first location to a plurality of second locations that fluidly access the plurality of apertures extending from the first surface of the first plate.

17. 20. The semiconductor processing chamber gas box of claim 16, further comprising a cover plate covering said recessed channel and forming a second plenum within said first plate.

18. A substrate support, and A blocker plate positioned between the gas box and the substrate support. The semiconductor processing chamber of claim 11 further comprising:

19. 20. The semiconductor processing chamber of claim 18, wherein a first region is defined between said gas box and said blocker plate, said first region being fluidly accessible from said central aperture and a plurality of peripheral apertures.

20. Further comprising a face plate; the faceplate is positioned between the blocker plate and the substrate support; a second region is defined between the blocker plate and the face plate; 20. The semiconductor processing chamber of claim 19, wherein the second region is fluidly accessible from a lateral channel extending through the gas box.

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