Substrate processing apparatus

Abstract

To provide a substrate processing apparatus capable of regulating the gas supplied into a processing container.SOLUTION: A substrate processing apparatus includes a processing container body capable of accommodating a substrate holder that holds a substrate, a pipe branching from the processing container body and extending horizontally from a sidewall of the processing container body, a temperature adjustment mechanism having a housing surrounding the pipe and configured to adjust the temperature of the pipe, and an injector arranged in the pipe.SELECTED DRAWING: Figure 1

Description

[Technical field]

[0001] The present disclosure relates to a substrate processing apparatus. [Background technology]

[0002] Patent Document 1 discloses a vertical film forming apparatus having a reaction tube, a flange portion supporting the reaction tube from the downstream side, a gas injector inserted from the flange portion into the reaction tube and extending in the height direction inside the reaction tube, and an exhaust port formed in the flange portion. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2012-169307 A Summary of the Invention [Problem to be solved by the invention]

[0004] The present disclosure provides a substrate processing apparatus capable of adjusting a gas supplied into a processing chamber. [Means for solving the problem]

[0005] According to one aspect of the present disclosure, there is provided a substrate processing apparatus comprising: a processing vessel body capable of accommodating a substrate holder for holding a substrate; piping branching from the processing vessel body and extending horizontally along a side wall of the processing vessel body; a temperature adjustment mechanism having a housing surrounding the piping and adjusting a temperature of the piping; and an injector disposed in the piping. Effect of the Invention

[0006] According to one aspect, it is possible to provide a substrate processing apparatus capable of adjusting a gas supplied into a processing chamber. [Brief description of the drawings]

[0007] [Figure 1]1 is a vertical cross-sectional view showing an example of a substrate processing apparatus according to a first embodiment. [Diagram 2] 1 is a horizontal cross-sectional view showing an example of a substrate processing apparatus according to a first embodiment. [Diagram 3] FIG. 2 is a perspective view showing an example of an injector. [Figure 4] FIG. 4 is a cross-sectional view showing an example of the structure of an injector and a temperature adjustment mechanism. [Diagram 5] FIG. 13 is a cross-sectional view showing a modified example of the injector and the temperature adjustment mechanism. [Figure 6] FIG. 11 is a vertical cross-sectional view showing an example of a substrate processing apparatus according to a second embodiment. [Figure 7] FIG. 4 is a perspective view showing an example of a temperature adjustment mechanism. [Figure 8] FIG. 4 is a cross-sectional view showing a structural example of a temperature adjustment mechanism. [Figure 9] FIG. 11 is a horizontal cross-sectional view showing another example of the substrate processing apparatus. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0008] Hereinafter, an embodiment of the present disclosure will be described with reference to the drawings. In the drawings, the same components are denoted by the same reference numerals, and duplicated descriptions may be omitted.

[0009] [Substrate processing equipment] [Substrate Processing Apparatus According to First Embodiment] A substrate processing apparatus 100A according to a first embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a vertical cross-sectional view showing an example of the substrate processing apparatus 100A according to the first embodiment. Fig. 2 is a horizontal cross-sectional view showing an example of the substrate processing apparatus 100A according to the first embodiment. Here, the substrate processing apparatus 100A is a film formation apparatus that forms a film on a substrate W such as a semiconductor wafer by an ALD (Atomic Layer Deposition) method by alternately supplying two or more types of processing gases.

[0010] The substrate processing apparatus 100A has a cylindrical processing vessel (reaction tube) 10 having an open lower end and a ceiling. The entire processing vessel 10 is made of, for example, quartz.

[0011] A cylindrical metallic flange 20 is airtightly connected to the opening at the bottom of the processing vessel 10 via a sealing member (not shown) such as an O-ring. The flange 20 supports the bottom of the processing vessel 10.

[0012] A wafer boat (substrate holder) 30 carrying a large number of substrates W (e.g., 25 to 150 substrates W) in multiple stages is inserted into the processing vessel 10 from below the flange portion 20. In this manner, the large number of substrates W are accommodated substantially horizontally in the processing vessel 10 with intervals between them in the vertical direction. The wafer boat 30 is made of, for example, quartz. The wafer boat 30 has three rods 31 (two are shown in FIG. 1), and the large number of substrates W are supported by grooves (not shown) formed in the rods 31.

[0013] A metal lid 32 is provided downstream of the flange 20 to open and close the opening at the bottom end of the flange 20. The lid 32 is configured to be movable up and down together with the wafer boat 30 by a lifting mechanism (not shown) such as a boat elevator (not shown). A sealing member (not shown) is provided between the periphery of the lid 32 and the bottom end of the flange 20 to maintain airtightness inside the processing vessel 10.

[0014] A heat insulator 33 made of quartz is provided between the wafer boat 30 and the lid 32. The rotation mechanism 34 rotates the wafer boat 30 and the heat insulator 33 around a vertical axis via a rotation shaft 35. The rotation shaft 35 airtightly penetrates the lid 32 and connects the rotation mechanism 34 and the heat insulator 33.

[0015] In this manner, the wafer boat 30 and the lid 32 are raised and lowered as a unit by the lifting mechanism, and are inserted into and removed from the processing vessel 10. The wafer boat 30 is rotated about a vertical axis by the rotation mechanism 34. The substrates W may be processed without rotating the wafer boat 30.

[0016] A cylindrical heat insulating member 41 and a heater 42 are provided around the processing vessel 10. The processing vessel 10, the flange portion 20, the heat insulating member 41, and the heater 42 are supported by a base plate 43 extending in the horizontal direction. The heater 42 is disposed on the inner peripheral surface of the cylindrical heat insulating member 41 with a ceiling and an open lower end. The heater 42 heats the processing vessel 10 by radiant heat and thermal convection. The heater 42 and the heat insulating member 41 control the temperature of the processing vessel 10 to a desired temperature. As a result, the substrate W in the processing vessel 10 is heated by radiant heat from the wall surface of the processing vessel 10, etc. That is, the heater 42 heats the processing vessel 10 and the substrate W to a desired temperature.

[0017] The substrate processing apparatus 100A further includes a gas supply unit 50A that supplies gas into the processing chamber 10, and a gas exhaust unit 60A that exhausts gas from the processing chamber 10.

[0018] Here, the processing vessel 10 includes a cylindrical processing vessel body 11 with a ceiling, a pipe 13, and a flange portion 14.

[0019] The processing vessel body 11 has a cylindrical shape with a ceiling, and the wafer boat 30 is inserted into the processing vessel body 11. One end of the side surface of the processing vessel body 11 serves as a gas supply chamber to which gas is supplied. The internal space of the gas supply chamber is a part of the internal space of the processing vessel body 11.

[0020] The piping 13 branches out from the processing vessel body 11 and extends horizontally (in the radial direction of the processing vessel body 11) on the side wall of the processing vessel body 11. The piping 13 branches out into multiple parts in the height direction at the side wall of the processing vessel body 11. One end of the piping 13 communicates with the processing vessel body 11 (gas supply chamber), and the other end extends to the outer periphery side of the heater 42. In addition, a flange portion 14 is provided on the other end of the piping 13. A temperature adjustment mechanism 70 is provided between the piping 13 and the flange portion 14, facing the outer surface of the heat insulating member 41.

[0021] An injector 200 (200A) is disposed in the processing vessel body 11 and the piping 13. The gas supply unit 50A includes the piping 13, the injector 200 (200A), a temperature adjustment mechanism 70, a gas supply source 51, a flow rate adjustment unit 52, an on-off valve 53, and a supply path 54.

[0022] The gas supply source 51 supplies gas. The flow rate adjustment unit 52 is, for example, a mass flow controller, and adjusts the flow rate of the gas supplied by the gas supply source 51. The on-off valve 53 switches between supplying and stopping the gas from the gas supply source 51 into the processing chamber 10. The supply path 54 connects the gas supply source 51 and the piping 13, and the flow rate adjustment unit 52 and the on-off valve 53 are disposed on the way therethrough. The supply path 54 and the piping 13 are connected outside the heater 42. The temperature adjustment mechanism 70 adjusts the temperature of the gas supplied to the piping 13 by heating and / or cooling the piping 13. The heater 42 may not be provided.

[0023] The connection between the supply path 54 and the pipe 13 is airtightly connected via a sealing member 55 such as an O-ring made of fluororubber such as polyvinylidene fluoride rubber (FKM). The temperature adjustment mechanism 70 is provided at least closer to the processing vessel body 11 than the sealing member 55.

[0024] The injector 200 (200A) is disposed between the processing vessel body 11 and the piping 13. The injector 200 (200A) receives gas from a supply line 54 and ejects the supplied gas into the processing vessel 10.

[0025] Gas exhaust unit 60A includes exhaust pipe 25 provided on the side wall of flange 20, vacuum pump 61, pressure adjustment unit 62, and exhaust path 63. Thus, gas within processing vessel 10 is exhausted to the outside of processing vessel 10 by gas exhaust unit 60A. In addition, pressure adjustment unit 62 controls the pressure within processing vessel 10 to a desired pressure.

[0026] The substrate processing apparatus 100A also includes a control unit 80. The control unit 80 controls, for example, the operation of each unit of the substrate processing apparatus 100. The control unit 80 may be, for example, a computer. A computer program for controlling the operation of each unit of the substrate processing apparatus 100A is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0027] 2 is a horizontal cross-sectional view showing an example of an arrangement of the pipes 13, the injector 200 (200A), and the temperature adjustment mechanism 70 in the substrate processing apparatus 100A. A plurality of pipes 13 are connected in the circumferential direction and the height direction of the processing vessel body 11 (the axial direction of the processing vessel body 11, the inter-face direction of a plurality of substrates W supported by the wafer boat 30). In the example shown in FIGS. 1 and 2, three pipes 13 are shown in the circumferential direction and two pipes 13 in the height direction.

[0028] Further, a temperature adjustment mechanism 70 is provided on the outer periphery of the pipe 13 so as to face the outer surface of the heat insulating member 41. The pipe 13 is provided with an injector 200A.

[0029] The temperature adjustment mechanism 70 is provided on the outer periphery side of the heater 42. The temperature adjustment mechanism 70 is provided outside the outer periphery of the heat insulating member 41. However, the present invention is not limited to this, and the temperature adjustment mechanism 70 may be configured to be provided on the inner side of the outer periphery of the heat insulating member 41. The temperature adjustment mechanism 70 heats and / or cools the pipe 13. For example, when the pipe 13 is heated, the flow section 220A of the injector 200A arranged in the pipe 13 is heated by radiant heat from the inner periphery of the pipe 13. Then, the heated flow section 220A heats the gas flowing through the injector 200A.

[0030] An example of the injector 200 (200A) and the temperature adjustment mechanism 70 will be described with reference to Fig. 3 and Fig. 4. Fig. 3 is a perspective view showing an example of the injector 200A. Fig. 4 is a cross-sectional view showing an example of the structure of the injector 200A and the temperature adjustment mechanism 70.

[0031] 3, the injector 200A includes a discharge part 210A, a flow part 220A, a supply part 230A, and a flange part 240A. The discharge part 210A has an internal space through which gas can flow, and has a cylindrical shape with closed upper and lower ends. When the injector 200A is attached to the substrate processing apparatus 100A, the discharge part 210A is disposed in the processing vessel body 11 and is a pipe extending in the height direction of the processing vessel 10.

[0032] The discharge part 210A is provided with a plurality of gas discharge holes 211A communicating with the internal space. The gas discharge holes 211A are provided in a plurality of positions in the height direction (axial direction) of the processing vessel 10. Note that the discharge part 210A has been described as having a cylindrical shape, but is not limited thereto, and may be, for example, a cylindrical shape with an elliptical cross-sectional area, a cylindrical shape with a polygonal cross-sectional area, or the like.

[0033] The flow section 220A is a pipe having an internal space through which gas can flow, and one end of the pipe is connected to the discharge section 210A so that the gas can flow, and the other end of the pipe is connected to the supply section 230A so that the gas can flow. When the injector 200A is attached to the substrate processing apparatus 100A, the flow section 220A is disposed in the pipe 13 as shown in Fig. 4. Note that the flow section 220A is illustrated as having a cylindrical shape, but is not limited thereto, and may be, for example, a pipe having an elliptical cross-sectional area, a pipe having a polygonal cross-sectional area, or the like.

[0034] Here, flow passage 220A has second portions 220A2 and 220A3 that are straight pipes, and a first portion 220A1 between them, the first portion having a larger cross-sectional area than second portions 220A2 and 220A3. Supply passage 54 is connected to supply passage 54, and gas is supplied from supply passage 54 to supply supply passage 54.

[0035] The flange portion 240A is provided on the outer peripheral surface of the flow-conducting portion 220A, and is formed to be approximately equal to (slightly smaller than) the inner diameter of the pipe 13. When the injector 200A is attached to the substrate processing apparatus 100A, the flange portion 240A is inserted into the pipe 13. This positions the injector 200A. The flange portion 240A also blocks the space between the inner peripheral surface of the pipe 13 and the outer peripheral surface of the flow-conducting portion 220A and the internal space of the processing vessel body 11 and the gas supply chamber. This prevents high-temperature gas in the internal space of the processing vessel body 11 from flowing into the space between the inner peripheral surface of the pipe 13 and the outer peripheral surface of the flow-conducting portion 220A. In other words, it prevents the gas flowing through the injector 200 from being heated by the high-temperature gas in the internal space of the processing vessel body 11. In addition, it also prevents the space between the inner peripheral surface of the pipe 13 and the outer peripheral surface of the flow-conducting portion 220A from communicating with the internal space of the processing vessel body 11, thereby suppressing the influence on the substrate processing process.

[0036] In this manner, the gas supplied from the gas supply source 51 flows from the supply path 54 through the supply part 230A, the flow part 220A, and the discharge part 210A in this order, and is supplied into the processing chamber 10 through the gas discharge holes 211A.

[0037] The temperature adjustment mechanism 70 shown in Fig. 4 will be described in detail. A large number of thin tubes 221 are formed inside the first portion 220A1 of the flow section 220A. A gas heater 71 is wound around the outer periphery of the pipe 13 corresponding to the first portion 220A1. The gas heater 71 is made of a metal such as tantalum. The gas heater 71 is an example of a heating mechanism.

[0038] The pipe 13 and the injector 200A are made of quartz. By heating with the gas heater 71, the pipe 13 can be heated to a temperature of 1000° C. or less (for example, 800° C. to 900° C.).

[0039] A cylindrical housing 72 is disposed on the outer surface of the heat insulating member 41 so as to cover the first portion 220A1. A flow path 73 for the thermal fluid is formed on the side wall of the cylindrical body of the housing 72. One end side of the cylindrical body of the housing 72 is open and is closed by the outer surface of the heat insulating member 41. The other end side of the cylindrical body of the housing 72 has a bottom. The pipe 13 and the second portion 220A3 pass through a central through hole of the bottom. A flow path 73 for the thermal fluid is also formed in the bottom. Depending on the temperature of the thermal fluid passed through the flow path 73, the temperature of the gas passing through the pipe 13 can be cooled or heated. The thermal fluid is, for example, water, and factory water can be used. The flow path 73 in the housing 72 is an example of a temperature adjustment mechanism provided inside the housing 72 and adjusts the temperature of the pipe 13, and is, for example, a cooling mechanism. However, the flow path 73 can also function as a heating mechanism depending on the temperature of the thermal fluid. In addition, the flow path 73 is configured to prevent the heat inside the temperature adjustment mechanism 70 from leaking to the outside. The housing 72 is made of a metal such as stainless steel or aluminum. The flow path 73 through which the thermal fluid can flow may be connected to a chiller. The pipe 13 can be cooled by supplying a low-temperature refrigerant from the chiller to the flow path 73.

[0040] The diameters of the first portion 220A1 and the flange portion 240A of the flow passage portion 220A are equal. The cross-sectional areas of the second portions 220A2 and 220A3 are equal. The cross-sectional area of ​​the first portion 220A1 is larger than the cross-sectional areas of the second portions 220A2 and 220A3. The cross-sectional areas of the piping 13 on the outer periphery of the first portion 220A1 and the second portion 220A2 are equal. The cross-sectional area of ​​the piping 13 on the outer periphery of the second portion 220A3 is smaller than the cross-sectional area of ​​the piping 13 on the outer periphery of the first portion 220A1 and the second portion 220A2.

[0041] A plurality of thin tubes 221 are provided in the horizontal direction inside first portion 220A1 of flow passage portion 220A. The quartz forming first portion 220A1 is heated by gas heater 71 via the quartz forming pipe 13. By bringing gas into contact with the plurality of thin tubes 221 of heated first portion 220A1, heat can be transferred to the gas passing through first portion 220A1.

[0042] Therefore, in the flow section 220A, a plurality of thin tubes 221 are formed in the first portion 220A1 of the pipe 13 around which the gas heater 71 is wound in order to increase the surface area in contact with the gas. However, the structure of the first portion 220A1 is not limited to the thin tubes 221 as long as it has a structure that increases the contact area with the gas passing through the first portion 220A1. For example, a tube having a helical shape (spiral shape) may be formed in the first portion 220A1. The thin tubes 221 in the first portion 220A1 may be formed at an angle rather than being formed straight in the horizontal direction.

[0043] An orifice 74 is provided at a gas inlet at the end of the first portion 220A1 on the second portion 220A3 side. The orifice 74 is provided so that a pressure difference occurs between the upstream side (the second portion 220A3 side) and the downstream side of the orifice 74. The upstream side of the orifice 74 is at approximately atmospheric pressure. The downstream side of the orifice 74 is decompressed to approximately the same pressure as the processing vessel body 11.

[0044] In the substrate processing apparatus 100A according to this embodiment, due to its structure, the pressure drops most near the outlet of the discharge part 210A of the injector 200A, and the gas temperature drops due to adiabatic expansion. Therefore, even if the temperature of the gas passing through the first part 220A1 is adjusted by the gas heater 71, the gas temperature drops near the outlet of the injector 200A, and the gas temperature controllability decreases.

[0045] Therefore, an orifice 74 is provided upstream of the first portion 220A1, and the pressure in the multiple thin tubes 221 downstream of the orifice 74 is reduced by the pressure loss caused by the orifice 74, thereby suppressing the pressure drop at the outlet of the injector 200A. In other words, the pressure inside the first portion 220A1 is made close to the pressure of the processing vessel body 11 by the pressure loss caused by the orifice 74, and then the gas is heated in the first portion 220A1. This makes it possible to suppress a sudden temperature drop of the gas due to adiabatic expansion near the outlet of the injector 200A, and improves the temperature controllability of the gas controlled by the gas heater 71.

[0046] Moreover, by providing the pipe 13 horizontally from the side, the gas in the injector 200 can be prevented from being heated by the heat from the processing vessel body 11. Furthermore, the cross-sectional area of ​​the second portion 220A2 is smaller than that of the first portion 220A1. As a result, the gas supplied from the supply unit 230A can be increased in flow rate in the second portion 220A2, and is quickly supplied to the discharge unit 210A. Therefore, the gas can be quickly sent into the processing vessel body 11 while maintaining the gas temperature controlled by the gas heating heater 71. This improves the temperature controllability of the gas discharged from the gas discharge hole 211A.

[0047] A temperature sensor (not shown) for detecting the temperature of the flow passage section 220A may be provided in the flow passage section 220A. The temperature sensor (not shown) is preferably provided downstream of the gas heater 71. The control section 80 may estimate the temperature of the gas supplied into the processing vessel 10 from the gas discharge holes 211A of the discharge section 210A based on a detection value of the temperature sensor in the flow passage section 220A.

[0048] The same type of gas may be supplied to the multiple pipes 13 arranged in the height direction of the processing vessel body 11. On the other hand, different gases may be supplied to each of the pipes 13 arranged in the circumferential direction of the processing vessel body 11.

[0049] For example, a process for forming a film on a substrate W by an ALD process will be described by repeating one cycle consisting of a process of supplying a precursor gas that adsorbs onto the surface of the substrate W into the processing vessel 10, a process of supplying a purge gas to purge the precursor gas from the processing vessel 10, a process of supplying a reactive gas (e.g., an oxidizing gas, a nitriding gas, etc.) that reacts with the precursor adsorbed onto the surface of the substrate W into the processing vessel 10, and a process of supplying a purge gas to purge the reactive gas from the processing vessel 10.

[0050] 2, a precursor gas is supplied to the pipe 13 on the right side in the circumferential direction. A reactant gas is supplied to the pipe 13 on the left side in the circumferential direction. A purge gas is supplied to the pipe 13 in the center in the circumferential direction. A temperature adjustment mechanism 70 is provided in the pipe 13.

[0051] With this configuration, by controlling the heater 42 and the temperature adjustment mechanism 70, the temperature of the processing vessel body 11 heated by the heater 42, the temperature of the precursor gas supplied from the injector 200A to the processing vessel 10, the temperature of the reaction gas supplied from the injector 200A to the processing vessel 10, and the temperature of the purge gas supplied from the injector 200A can be made different from each other. That is, the temperature of the gas supplied to the processing vessel 10 can be controlled for each gas type.

[0052] This allows, for example, a precursor gas to be supplied to the processing vessel 10 at a temperature at which the precursor gas is suitably adsorbed on the surface of the substrate W. Also, a reaction gas can be supplied to the processing vessel 10 at a temperature at which the reaction gas reacts suitably with the precursor adsorbed on the surface of the substrate W. Also, by supplying a purge gas, for example, the substrate W can be cooled.

[0053] In addition, by providing a temperature adjustment mechanism 70 downstream of the sealing member 55 and having a structure that can heat the gas downstream of the sealing member 55, the gas can be heated to the desired temperature in advance and then supplied to the processing vessel body 11, independently of the temperature of the processing vessel body 11, while protecting the sealing member 55.

[0054] Since the main heaters 42 are controlled to the same temperature, temperature control using only the heater 42 may result in a film on the upper substrate W of the wafer boat 30 having a greater thickness than the film on the lower substrate W during processing. In this case, as an example, the temperature of the gas supplied from the lower injector 200A to the processing vessel 10 is increased, and the temperature of the gas supplied from the upper injector 200A to the processing vessel 10 is decreased. This makes it possible to make the film thicknesses of the substrates W on the top and bottom of the wafer boat 30 the same. However, the temperature control of each injector 200A arranged in the height direction is not limited to this.

[0055] In addition, a cooling medium, as an example of a thermal fluid, may be passed through the flow path 73 to cool the injector 200A in the first portion 220A1, and the gas may be supplied to the processing vessel 10 in a state where the gas is less active. For example, by using a cooling medium to cool a gas that is easily decomposed at high temperatures, the gas may be supplied to the processing vessel 10 in a state where the gas is not decomposed too much. An example of a gas that is desired to be cooled to reduce its activation is O3 gas. On the other hand, the injector 200A may be heated in the first portion 220A1 by the gas heater 71, and the gas may be supplied to the processing vessel 10 in a state where the gas is sufficiently activated. For example, an example of a gas that is desired to be heated to activate is ammonia, H2 gas, etc.

[0056] In addition, by supplying one gas into the processing vessel 10 from multiple pipes 13, the flow rate and / or temperature of the gas can be controlled in the height direction. That is, the flow rate and / or temperature of the gas can be controlled for each region (zone) in the height direction.

[0057] Furthermore, the substrate processing apparatus 100A is configured so that the injector 200 (200A) is replaceable (detachable). This allows the shape of the gas supply unit 50A to be changed by replacing the injector 200 with one having a different number, size, arrangement, etc. of gas discharge holes 211A. The injector 200 (200A) may be L-shaped. The discharge unit 210A of the injector 200 (200A) may be erected upward.

[0058] According to the substrate processing apparatus 100A in accordance with the first embodiment, the gas supplied to the processing chamber 10 can be adjusted.

[0059] That is, a plurality of regions (zones) are formed in the height direction of the processing vessel 10. Each region corresponds to a respective injector 200. According to the substrate processing apparatus 100A of the first embodiment, as shown in FIG. 1, the flow rate of gas supplied to each pipe 13 in the height direction can be individually controlled by the flow rate adjuster 52. This makes it possible to control the flow rate of gas supplied to each of the plurality of regions. Also, the injector 200 is detachable. The flow rate of gas supplied to each of the plurality of regions can be controlled by replacing the injector 200 with another injector 200 having a different shape, etc.

[0060] Furthermore, according to the substrate processing apparatus 100A of the first embodiment, the gas heaters 71 provided corresponding to the vertical pipes 13 can be individually controlled to individually control the temperature of the gas to be supplied, thereby making it possible to control the temperature of the gas to be supplied to each of the multiple regions.

[0061] According to the substrate processing apparatus 100A in accordance with the first embodiment, the flow rate and temperature of the gas to be supplied can be controlled for each type of gas and for each region.

[0062] Therefore, the gas supplied into the processing vessel 10 from the gas discharge holes 211A passes between the substrates W supported on the wafer boat 30, and is exhausted to the outside of the processing vessel 10 via the exhaust pipe 25. This improves the uniformity of the flow rate and temperature of the gas supplied by the side flow, thereby improving the uniformity of the substrate processing.

[0063] (Modifications of injector and temperature adjustment mechanism) A modified example of the injector 200 (200A1) and the temperature adjustment mechanism 70A will be described with reference to Fig. 5. Fig. 5 is a cross-sectional view showing a modified example of the injector 200 (200A1) and the temperature adjustment mechanism 70A.

[0064] The outer shape of the injector 200 (200A1) shown in FIG. 5 is the same as that of the injector 200 (200A) shown in FIG. 3, and therefore a description thereof will be omitted.

[0065] The basic configuration of injector 200 (200A1) shown in Fig. 5 is similar to the basic configuration of injector 200 (200A) shown in Fig. 4. In injector 200 (200A1) shown in Fig. 5, the inside of first portion 220A1 of flow passage portion 220A becomes a plasma generation space.

[0066] Furthermore, the temperature adjustment mechanism 70A has an induction coil 76 wound around the pipe 13 of the first portion 220A1. High frequency power is supplied to the induction coil 76 from a high frequency power source 77. As a result, the gas flowing through the flow section 220A is turned into plasma by the high frequency power while passing through the first portion 220A1. This makes it possible to generate plasma from the gas supplied into the first portion 220A1.

[0067] The injector 200 (200A1) and the temperature adjustment mechanism 70A according to this modification can provide the same effects as those of the injector 200 (200A) and the temperature adjustment mechanism 70 shown in Fig. 4. In addition, in this modification, the activity of the gas is increased by plasma in the first portion 220A1, and then the gas can be supplied to the processing vessel body 11 in a more decomposed state.

[0068] [Substrate Processing Apparatus 100B According to Second Embodiment] A substrate processing apparatus 100B according to a second embodiment will be described with reference to FIGS. 6 to 8. FIG. 6 is a vertical cross-sectional view showing an example of the substrate processing apparatus 100B according to the second embodiment. FIG. 7 is a perspective view showing an example of a temperature adjustment mechanism 300. FIG. 8 is a cross-sectional view showing an example of the structure of the temperature adjustment mechanism 300. Here, the substrate processing apparatus 100B is, for example, a film formation apparatus that alternately supplies two or more types of processing gases to form a film on a substrate W by an ALD method.

[0069] The substrate processing apparatus 100B has a cylindrical processing vessel (reaction tube) 10 with an open lower end and a ceiling. The entire processing vessel 10 is made of, for example, quartz.

[0070] A cylindrical metallic flange 20 is airtightly connected to the opening at the bottom of the processing vessel 10 via a sealing member (not shown) such as an O-ring. The flange 20 supports the bottom of the processing vessel 10.

[0071] A wafer boat (substrate holder) 30 carrying a large number of substrates W (e.g., 25 to 150 substrates W) in multiple stages is inserted into the processing vessel 10 from below the flange portion 20. In this manner, the large number of substrates W are accommodated substantially horizontally in the processing vessel 10 with intervals between them in the vertical direction. The wafer boat 30 is made of, for example, quartz. The wafer boat 30 has three rods 31 (two are shown in FIG. 7), and the large number of substrates W are supported by grooves (not shown) formed in the rods 31.

[0072] A metal lid 32 is provided downstream of the flange 20 to open and close the opening at the bottom end of the flange 20. The lid 32 is configured to be movable up and down together with the wafer boat 30 by a lifting mechanism (not shown) such as a boat elevator (not shown). A sealing member (not shown) is provided between the periphery of the lid 32 and the bottom end of the flange 20 to maintain airtightness inside the processing vessel 10.

[0073] A heat insulator 33 made of quartz is provided between the wafer boat 30 and the lid 32. The rotation mechanism 34 rotates the wafer boat 30 and the heat insulator 33 around a vertical axis via a rotation shaft 35. The rotation shaft 35 airtightly penetrates the lid 32 and connects the rotation mechanism 34 and the heat insulator 33.

[0074] In this manner, the wafer boat 30 and the lid 32 are raised and lowered as a unit by the lifting mechanism, and are inserted into and removed from the processing vessel 10. The wafer boat 30 is rotated about a vertical axis by the rotation mechanism 34. The substrates W may be processed without rotating the wafer boat 30.

[0075] A cylindrical insulating member 41 and a heater 42 are provided around the processing vessel 10. The processing vessel 10, the flange portion 20, the insulating member 41, and the heater 42 are supported by a base plate 43 extending in the horizontal direction. The heater 42 includes a cylindrical insulating member 41 with a ceiling and an open lower end, and the heater 42 arranged on the inner peripheral surface of the insulating member 41. The heater 42 heats the processing vessel 10 by radiant heat and thermal convection from the heater 42. The heater 42 controls the temperature of the processing vessel 10 to a desired temperature. As a result, the substrate W in the processing vessel 10 is heated by radiant heat from the wall surface of the processing vessel 10, etc. That is, the heater 42 heats the processing vessel 10 and the substrate W to a desired temperature.

[0076] The substrate processing apparatus 100B further includes a gas supply unit 50B that supplies gas into the processing chamber 10, and a gas exhaust unit 60B that exhausts gas from the processing chamber 10.

[0077] The gas supply unit 50B includes a gas supply source 51, a flow rate regulator 52, an on-off valve 53, a supply path 54, and a gas supply pipe 56.

[0078] The gas supply source 51 supplies gas. The flow rate adjustment unit 52 is, for example, a mass flow controller, and adjusts the flow rate of the gas supplied by the gas supply source 51. The on-off valve 53 switches between supplying and stopping the gas from the gas supply source 51 into the processing vessel 10. The supply path 54 connects the gas supply source 51 and the gas supply pipe 56, and the flow rate adjustment unit 52 and the on-off valve 53 are disposed on the way thereto. The gas supply pipe 56 is inserted into the processing vessel 10 from the flange portion 20, and is disposed in the gas supply chamber. The gas supply pipe 56 has a plurality of discharge portions 56a formed in the height direction.

[0079] Gas exhaust unit 60B includes exhaust pipe 25 provided on the side wall of flange 20, vacuum pump 61, pressure adjustment unit 62, and exhaust path 63. Thus, gas within processing vessel 10 is exhausted to the outside of processing vessel 10 by gas exhaust unit 60B. In addition, pressure adjustment unit 62 controls the pressure within processing vessel 10 to a desired pressure.

[0080] The substrate processing apparatus 100B also includes a control unit 80. The control unit 80 controls, for example, the operation of each unit of the substrate processing apparatus 100B. The control unit 80 may be, for example, a computer. A computer program for controlling the operation of each unit of the substrate processing apparatus 100B is stored in a storage medium. The storage medium may be, for example, a flexible disk, a compact disk, a hard disk, a flash memory, a DVD, or the like.

[0081] Here, the processing vessel 10 includes a cylindrical processing vessel body 11 with a ceiling, piping 16 , a flange portion 17 , and a temperature adjustment pipe 320 .

[0082] The processing vessel body 11 has a cylindrical shape with a ceiling, and the wafer boat 30 is inserted into the processing vessel body 11. One end of the side surface of the processing vessel body 11 serves as a gas supply chamber to which gas is supplied. The internal space of the gas supply chamber is a part of the internal space of the processing vessel body 11.

[0083] The pipe 16 branches out from the processing vessel body 11 and extends horizontally (in the radial direction of the processing vessel body 11) on the side wall of the processing vessel body 11. The pipe 16 branches out into a plurality of branches in the height direction at the side wall of the processing vessel body 11. One end of the pipe 16 communicates with the processing vessel body 11, extends horizontally (in the radial direction of the processing vessel body 11) and penetrates the side surface of the heater 42, and the other end extends to the outer periphery of the heater 42. A flange portion 17 is provided at the other end of the pipe 16. The connection portion between the supply path 82 and the pipe 16 is airtightly connected via a sealing member 65 such as an O-ring made of fluorine-based rubber such as vinylidene fluoride rubber (FKM).

[0084] A temperature adjustment mechanism 300 is disposed in the processing vessel body 11 and the piping 16. As shown in Fig. 7 and Fig. 8, the temperature adjustment mechanism 300 has a temperature adjustment pipe 320. The temperature adjustment pipe 320 is connected to the chiller unit 81 via a supply path 82. The temperature adjustment pipe 320 is made of quartz.

[0085] The temperature adjustment pipe 320 is an annular member through which the thermal fluid circulates. Alternatively, the temperature adjustment pipe 320 may be a rod-shaped member, and a circulation flow path may be formed on the surface of the temperature adjustment pipe 320. The temperature adjustment mechanism 300 circulates the thermal fluid, the temperature of which has been adjusted by the chiller unit 81, to the temperature adjustment pipe 320 via the supply path 82. As shown in FIG. 8, the temperature adjustment pipe 320 is arranged such that two pipes are in contact with the piping 16 within the piping 16, and extends in the height direction from the piping 16 to the processing vessel body 11 so that the cross section near the substrate W within the processing vessel body 11 is T-shaped.

[0086] An inert gas such as N2 gas is circulated as a thermal fluid through the temperature adjustment pipe 320. The temperature adjustment pipe 320 circulates the supplied thermal fluid such as N2 gas near the substrate W and returns it to the chiller unit 81. By circulating the thermal fluid such as N2 gas near the substrate W in this manner, the temperature of the edge portion within the substrate surface can be quickly heated or cooled according to the temperature of the thermal fluid.

[0087] According to the temperature adjustment mechanism 300 of the second embodiment, in order to control the temperature of the edge and center portions within the surface of the substrate W, a heated or cooled thermal fluid is circulated through the temperature adjustment pipe 320, thereby making it possible to locally control the temperature of the edge portion within the surface of the substrate W.

[0088] Moreover, by circulating the cooled thermal fluid through the temperature adjustment pipe 320, the temperature of the processing vessel body 11 can be rapidly lowered. Particularly in low-temperature processes, the cooling effect of the temperature adjustment pipe 320 within the processing vessel body 11 is high. By flowing a thermal fluid controlled to a predetermined temperature through the temperature adjustment pipe 320, the temperature within the substrate surface can be made uniform more quickly, and the temperature difference between the center and edge parts of the substrate W can be made to a state suitable for film formation, and this can be used as an adjustment knob for the in-surface uniformity of the substrate W.

[0089] [others] The pipes 13, 16 may be provided in a plurality of positions in the circumferential direction (horizontal direction) of the processing vessel body 11 and / or in the axial direction (vertical direction) of the processing vessel body 11. As shown in Fig. 2, the plurality of pipes 13, 16 may be arranged radially toward the central axis C of the processing vessel body 11. As shown in Fig. 9, the plurality of pipes 13, 16 may be arranged parallel to each other, not toward the central axis C of the processing vessel body 11. The pipes 13, 16 may be arranged in only one stage.

[0090] Two or more of the injector 200A and temperature adjustment mechanism 70 of the first embodiment (see FIG. 4), the injector 200A1 and temperature adjustment mechanism 70A of the modified example (see FIG. 5), and the temperature adjustment mechanism 300 of the second embodiment (see FIG. 8) may be combined and applied to the substrate processing apparatus.

[0091] When the temperature adjustment mechanism 300 of the second embodiment is combined with at least one of the injector 200A and the temperature adjustment mechanism 70 of the first embodiment and the injector 200A1 and the temperature adjustment mechanism 70A of the modified example, it is preferable to combine them in the circumferential direction of the processing vessel body 11.

[0092] The substrate processing apparatus according to the presently disclosed embodiment should be considered as illustrative and not restrictive in all respects. The embodiments can be modified and improved in various ways without departing from the scope and spirit of the appended claims. The matters described in the above embodiments can be configured in other ways without any contradiction, and can be combined without any contradiction. [Explanation of symbols]

[0093] 10 Processing vessel (reaction tube) 11 Processing vessel body 12 Gas Supply Room 13, 16 Piping 14, 17 Flange section 30 Wafer boat (substrate holder) 32 Lid 33 Insulation 34 Rotation mechanism 35 Rotational Axis 41 Insulation materials 42 Heater 50A, 50B Gas supply unit 51 Gas supply source 52 Flow rate adjustment section 53 On-off valve 54 Supply route 55, 65 Sealing member 70, 70A temperature adjustment mechanism 71 Gas Heater 80 Control section 100A, 100B Substrate processing equipment 200,200A,200A1 Injector 220A flow section 300 Temperature adjustment mechanism 320 Temperature Control Pipe W substrate

Claims

1. a processing vessel body capable of accommodating a substrate holder for holding a substrate; a pipe branching from the processing vessel body and extending horizontally along a side wall of the processing vessel body; a temperature adjustment mechanism having a housing surrounding the piping and adjusting a temperature of the piping; and an injector disposed in the piping.

2. The temperature adjustment mechanism is a heating mechanism and / or a cooling mechanism provided inside the housing. The substrate processing apparatus according to claim 1 .

3. The heating mechanism is a heater wound around the outer periphery of the pipe inside the housing. The substrate processing apparatus according to claim 2 .

4. The cooling mechanism is a flow path formed in the housing and for allowing a thermal fluid to flow. The substrate processing apparatus according to claim 2 .

5. The injector is detachably disposed in the pipe. The substrate processing apparatus according to claim 1 .

6. The injector includes: a discharge part having a plurality of gas discharge holes; a flow passage portion that is in communication with the discharge portion and is disposed within the pipe; The flow passage has a larger cross-sectional area in a first portion where the heating mechanism is provided than in other portions. The substrate processing apparatus according to claim 2 .

7. The first portion of the flow passage has a plurality of capillaries. The substrate processing apparatus according to claim 6 .

8. the heating mechanism is an induction coil that supplies high-frequency power; The first portion of the flow passage is a plasma generation space for generating plasma from a gas. The substrate processing apparatus according to claim 6 .

9. An orifice is provided at a gas inlet to the first portion of the flow passage. The substrate processing apparatus according to claim 6 .

10. a processing vessel body capable of accommodating a substrate holder for holding a substrate; a pipe branching from the processing vessel body and extending horizontally along a side wall of the processing vessel body; and a detachable temperature adjustment mechanism disposed on the piping.

11. a sealing member for airtightly connecting a connection between a supply path for supplying gas and the piping; the temperature adjustment mechanism is provided at least closer to the processing vessel body than the sealing member; The substrate processing apparatus according to claim 1 .

12. The pipes are provided in a plurality of pipes in the axial direction of the processing vessel body. The substrate processing apparatus according to claim 1 .

13. The pipes are provided in a plurality of parts in a circumferential direction of the processing vessel body. The substrate processing apparatus according to claim 1 .

14. The pipes are provided in a plurality of portions in the circumferential direction and / or the axial direction of the processing vessel body, The plurality of pipes are arranged radially toward the central axis of the processing vessel body. The substrate processing apparatus according to claim 1 .

15. The pipes are provided in a plurality of portions in the circumferential direction and / or the axial direction of the processing vessel body, The plurality of pipes are arranged in parallel to each other. The substrate processing apparatus according to claim 1 .

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