Protective film forming composition having acetal structure

Abstract

To provide a composition that forms a protective film with excellent resistance against a semiconductor wet etching solution during the lithographic process when producing semiconductors; a method for producing a substrate with a resist pattern, to which the protective film is applied; and a method for producing semiconductor devices.SOLUTION: A composition for forming a protective film against a semiconductor wet etching solution is provided, which contains: a compound containing at least one acetal structure in its molecule, or a polymer thereof; and a solvent.SELECTED DRAWING: None

Description

[Technical field]

[0001] The present invention relates to a composition for forming a protective film having excellent resistance to a wet etching solution for semiconductors, preferably a basic hydrogen peroxide aqueous solution, in a lithography process in semiconductor manufacturing, and also to a method for manufacturing a substrate having a resist pattern to which the protective film is applied, and a method for manufacturing a semiconductor device. [Background technology]

[0002] 2. Description of the Related Art In semiconductor manufacturing, a lithography process is widely known in which a resist underlayer film is provided between a substrate and a resist film formed thereon, and a resist pattern having a desired shape is formed. Patent Document 1 discloses an antireflective coating composition for use with an overcoated photoresist, which contains a polymer having a glycidyl group and a polymer having an aromatic group substituted with a hydroxyl group or the like, and a method for forming a photoresist underlayer film using the composition, and then carrying out exposure, development, and pattern formation. Patent Document 2 discloses a method for forming a photoresist relief image by applying a composition containing a resin containing an epoxy reactive group such as a hydroxy group and a crosslinked resin containing an epoxy group onto a substrate, and forming a photoresist layer thereon. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] JP 2017-107185 A [Patent Document 2] JP 2017-187764 A Summary of the Invention [Problem to be solved by the invention]

[0004] When the resist underlayer film is used as an etching mask to process the underlying substrate by wet etching, the resist underlayer film is required to have a good masking function against the wet etching solution during the processing of the underlying substrate. Conventionally, a method of adding gallic acid as an additive has been used to impart resistance to SC-1 (ammonia-hydrogen peroxide solution), a type of wet etching chemical. In addition, it has been known that a catechol structure exhibits an effect of improving resistance to wet etching solutions for semiconductors (Patent Documents 1 and 2), but the resistance to wet etching solutions for semiconductors is still not fully satisfactory. The object of the present invention is to solve these problems. [Means for solving the problem]

[0005] The present invention encompasses the following: [1] A protective film-forming composition for a semiconductor wet etching solution, comprising a compound having at least one acetal structure in its molecule, or a polymer thereof, and a solvent. [2] The protective film-forming composition according to [1], wherein the acetal structure is a structure that protects adjacent hydroxy groups of an aromatic group. [3] The compound has formula (1): [ka] (In formula (1), R 1 and R 2 each represents a hydrogen atom, an optionally substituted alkyl group having 1 to 10 carbon atoms, or an optionally substituted aryl group having 6 to 40 carbon atoms, n 1 is 0, 1, or 2, n 2 is 1 or 2, A 1 represents a hydrogen atom or a hydroxyl group, A 2 is -CH(R 0 )-A 4 represents a group, R0 represents a hydrogen atom, a phenyl group which may be substituted by one to three hydroxy groups, or a benzodioxol group, A 3 , and A 4 Each represents the same or different monovalent organic group. The protective film-forming composition according to [1], which contains a partial structure represented by the following formula: [4] In the formula (1), n 1 is 0 and n 2 The protective film-forming composition according to [3], wherein [5] In the formula (1), R 1 and R 2 and each is the same or different and is a hydrogen atom or a methyl group. [6] In the formula (1), R 1 and R 2 The protective film-forming composition according to [3], wherein [7] The protective film-forming composition according to any one of [1] to [6], further comprising a crosslinking catalyst. [8] The protective film-forming composition according to any one of [1] to [7], further comprising a crosslinking agent. [9] The protective film-forming composition according to any one of [1] to [8], further comprising a surfactant.

[10] A protective film, which is a fired product of a coating film made of the protective film-forming composition according to any one of [1] to [9].

[11] A method for producing a substrate having a resist pattern, comprising the steps of applying the protective film composition according to any one of [1] to [9] onto a semiconductor substrate and baking it to form a protective film as a resist underlayer film, the method being used in the production of semiconductors.

[12] A method for manufacturing a semiconductor device, comprising the steps of forming a protective film on a semiconductor substrate, the protective film being formed on the surface of which may be an inorganic film, using a protective film-forming composition for a semiconductor wet etching solution according to any one of [1] to [9], forming a resist pattern on the protective film, dry etching the protective film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate, and wet etching and cleaning the inorganic film or the semiconductor substrate using the protective film after dry etching as a mask. Effect of the Invention

[0006] In the present invention, by introducing into the polymer a structure in which adjacent hydroxy groups are protected by acetal, high resistance to a wet etching solution for semiconductors can be achieved. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0007] [Protective film forming composition] The protective film-forming composition for a semiconductor wet etching solution according to the present invention contains a compound having at least one acetal structure in the molecule, or a polymer thereof, and a solvent.

[0008] [Compounds containing at least one acetal structure in the molecule] The acetal structure is preferably a structure that protects adjacent hydroxy groups of an aromatic group, and in this case, the compound contains, in the molecule, at least one aromatic group in which adjacent hydroxy groups are protected by an acetal. Such an acetal structure preferably has the formula (1): [ka] (In formula (1), R 1 and R 2 each represents a hydrogen atom, an optionally substituted alkyl group having 1 to 10 carbon atoms, or an optionally substituted aryl group having 6 to 40 carbon atoms, n 1 is 0, 1, or 2, n 2 is 1 or 2, A 1 represents a hydrogen atom or a hydroxyl group, A 2 is -CH(R 0 )-A 4 represents a group, R 0 represents a hydrogen atom, a phenyl group which may be substituted by one to three hydroxy groups, or a benzodioxol group, A 3 , and A 4 Each represents the same or different monovalent organic group. It is a partial structure represented by:

[0009] Examples of the optionally substituted alkyl group having 1 to 10 carbon atoms include a methyl group, an ethyl group, an n-propyl group, an i-propyl group, a cyclopropyl group, an n-butyl group, an i-butyl group, an s-butyl group, a t-butyl group, a cyclobutyl group, a 1-methyl-cyclopropyl group, a 2-methyl-cyclopropyl group, an n-pentyl group, a 1-methyl-n-butyl group, a 2-methyl-n-butyl group, a 3-methyl-n-butyl group, a 1,1-dimethyl-n-propyl group, a 1,2-dimethyl-n-propyl group, a 2,2-dimethyl-n-propyl group, a 1-ethyl-n -propyl, cyclopentyl, 1-methylcyclobutyl, 2-methylcyclobutyl, 3-methylcyclobutyl, 1,2-dimethylcyclopropyl, 2,3-dimethylcyclopropyl, 1-ethylcyclopropyl, 2-ethylcyclopropyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 3-methylpentyl, 4-methylpentyl, 1,1-dimethylbutyl, 1,2-dimethylbutyl, 1,3-dimethylbutyl , 2,2-dimethyl-n-butyl, 2,3-dimethyl-n-butyl, 3,3-dimethyl-n-butyl, 1-ethyl-n-butyl, 2-ethyl-n-butyl, 1,1,2-trimethyl-n-propyl, 1,2,2-trimethyl-n-propyl, 1-ethyl-1-methyl-n-propyl, 1-ethyl-2-methyl-n-propyl, cyclohexyl, 1-methyl-cyclopentyl, 2-methyl-cyclopentyl, 3-methyl-cyclopentyl, 1-ethyl-cyclobutyl, 2-ethyl-cyclobutyl cyclopropyl, 3-ethyl-cyclobutyl, 1,2-dimethyl-cyclobutyl, 1,3-dimethyl-cyclobutyl, 2,2-dimethyl-cyclobutyl, 2,3-dimethyl-cyclobutyl, 2,4-dimethyl-cyclobutyl, 3,3-dimethyl-cyclobutyl, 1-n-propyl-cyclopropyl, 2-n-propyl-cyclopropyl, 1-i-propyl-cyclopropyl, 2-i-propyl-cyclopropyl, 1,2,2-trimethyl-cyclopropyl, 1,2,3-trimethyl-cyclopropyl, 2,2,Examples of the cyclopropyl group include a 3-trimethylcyclopropyl group, a 1-ethyl-2-methylcyclopropyl group, a 2-ethyl-1-methylcyclopropyl group, a 2-ethyl-2-methylcyclopropyl group, and a 2-ethyl-3-methylcyclopropyl group.

[0010] Examples of the aryl group having 6 to 40 carbon atoms include a phenyl group, an o-methylphenyl group, a m-methylphenyl group, a p-methylphenyl group, an o-chlorophenyl group, a m-chlorophenyl group, a p-chlorophenyl group, an o-fluorophenyl group, a p-fluorophenyl group, an o-methoxyphenyl group, a p-methoxyphenyl group, a p-nitrophenyl group, a p-cyanophenyl group, an α-naphthyl group, a β-naphthyl group, an o-biphenylyl group, a m-biphenylyl group, a p-biphenylyl group, a 1-anthryl group, a 2-anthryl group, a 9-anthryl group, a 1-phenanthryl group, a 2-phenanthryl group, a 3-phenanthryl group, a 4-phenanthryl group, and a 9-phenanthryl group.

[0011] Substituents for these alkyl and aryl groups include, but are not limited to, halogen atoms (fluorine, chlorine, bromine, iodine), nitro groups, cyano groups, amino groups, hydroxy groups, carbonyl groups, and carbonyloxy groups.

[0012] In formula (1), preferably, n 1 is 0 and n 2 is 1.

[0013] In formula (1), preferably R 1 and R 2 are the same or different and each is a hydrogen atom or a methyl group. More preferably, R 1 and R 2 are both hydrogen atoms.

[0014] [Monovalent organic group] The monovalent organic group is not particularly limited. It may be derived from various polymers or oligomers, or may be derived from a low molecular weight compound. The monovalent organic group may be derived from a compound represented by formula (1). In particular, A 4 represents a compound represented by formula (1), the same or different compounds represented by formula (1) may be -CH(R 0 )-group.

[0015] [Monovalent organic group derived from polymer] By employing an organic group derived from a polymer, it is possible to adjust the dry etching rate (amount of film thickness reduction per unit time), attenuation coefficient, refractive index, etc. of the resist underlayer film formed from the protective film-forming composition of the present invention. The polymer is not particularly limited, and various organic polymers can be used, such as addition polymerization polymers, condensation polymerization polymers, and ring-opening polymerization polymers, including polyester, polystyrene, polyimide, acrylic polymer, methacrylic polymer, polyvinyl ether, phenol novolac, naphthol novolac, polyether, polyamide, and polycarbonate.

[0016] Examples of such organic polymers include addition polymerization polymers containing, as structural units, addition polymerizable monomers such as benzyl acrylate, benzyl methacrylate, phenyl acrylate, naphthyl acrylate, anthryl methacrylate, anthryl methyl methacrylate, styrene, hydroxystyrene, benzyl vinyl ether, and N-phenylmaleimide, and condensation polymerization polymers such as phenol novolac and naphthol novolac.

[0017] When an addition polymer is used as the organic polymer, the polymer may be a homopolymer or a copolymer. An addition polymerizable monomer is used to produce the addition polymer. Examples of such an addition polymerizable monomer include acrylic acid, methacrylic acid, acrylic acid ester compounds, methacrylic acid ester compounds, acrylamide compounds, methacrylamide compounds, vinyl compounds, styrene compounds, maleimide compounds, maleic anhydride, and acrylonitrile.

[0018] Examples of the acrylic acid ester compound include methyl acrylate, ethyl acrylate, normal hexyl acrylate, isopropyl acrylate, cyclohexyl acrylate, benzyl acrylate, phenyl acrylate, anthryl methyl acrylate, 2-hydroxyethyl acrylate, 3-chloro-2-hydroxypropyl acrylate, 2-hydroxypropyl acrylate, 2,2,2-trifluoroethyl acrylate, 2,2,2-trichloroethyl acrylate, 2-bromoethyl acrylate, 4-hydroxybutyl acrylate, 2-methoxyethyl acrylate, tetrahydrofurfuryl acrylate, 2-methyl-2-adamantyl acrylate, 5-acryloyloxy-6-hydroxynorbornene-2-carboxylic-6-lactone, 3-acryloxypropyltriethoxysilane, and glycidyl acrylate.

[0019] Examples of the methacrylic acid ester compound include methyl methacrylate, ethyl methacrylate, normal hexyl methacrylate, isopropyl methacrylate, cyclohexyl methacrylate, benzyl methacrylate, phenyl methacrylate, anthryl methyl methacrylate, 2-hydroxyethyl methacrylate, 2-hydroxypropyl methacrylate, 2,2,2-trifluoroethyl methacrylate, 2,2,2-trichloroethyl methacrylate, 2-bromoethyl methacrylate, 4-hydroxybutyl methacrylate, 2-methoxyethyl methacrylate, tetrahydrofurfuryl methacrylate, 2-methyl-2-adamantyl methacrylate, 5-methacryloyloxy-6-hydroxynorbornene-2-carboxylic-6-lactone, 3-methacryloxypropyltriethoxysilane, glycidyl methacrylate, 2-phenylethyl methacrylate, hydroxyphenyl methacrylate, and bromophenyl methacrylate.

[0020] Examples of the acrylamide compound include acrylamide, N-methylacrylamide, N-ethylacrylamide, N-benzylacrylamide, N-phenylacrylamide, N,N-dimethylacrylamide, and N-anthrylacrylamide.

[0021] Examples of the methacrylamide compound include methacrylamide, N-methyl methacrylamide, N-ethyl methacrylamide, N-benzyl methacrylamide, N-phenyl methacrylamide, N,N-dimethyl methacrylamide, and N-anthryl acrylamide.

[0022] Examples of the vinyl compound include vinyl alcohol, 2-hydroxyethyl vinyl ether, methyl vinyl ether, ethyl vinyl ether, benzyl vinyl ether, vinyl acetate, vinyltrimethoxysilane, 2-chloroethyl vinyl ether, 2-methoxyethyl vinyl ether, vinyl naphthalene, and vinyl anthracene.

[0023] Examples of the styrene compound include styrene, hydroxystyrene, chlorostyrene, bromostyrene, methoxystyrene, cyanostyrene, and acetylstyrene.

[0024] Examples of the maleimide compound include maleimide, N-methylmaleimide, N-phenylmaleimide, N-cyclohexylmaleimide, N-benzylmaleimide, and N-hydroxyethylmaleimide.

[0025] When a condensation polymerization polymer is used as the polymer, for example, a condensation polymerization polymer of a glycol compound and a dicarboxylic acid compound can be mentioned.

[0026] Examples of the glycol compound include diethylene glycol, hexamethylene glycol, butylene glycol, and the like.

[0027] Examples of the dicarboxylic acid compound include aliphatic dicarboxylic acids and aromatic dicarboxylic acids such as succinic acid, 2,2-dimethylsuccinic acid, adipic acid, terephthalic acid, isophthalic acid, phthalic acid, 3,3'-dithiodipropionic acid, tartaric acid, malic acid, and maleic anhydride.

[0028] Other examples include polyesters, polyamides, and polyimides such as polypyromellitimide, poly(p-phenylene terephthalamide), polybutylene terephthalate, and polyethylene terephthalate.

[0029] When a ring-opening polymerization polymer is used as the polymer, examples of such a polymer include a condensation polymerization polymer of a diepoxy compound and a dicarboxylic acid compound.

[0030] Examples of the diepoxy compound include sorbitol polyglycidyl ether, polyglycerol polyglycidyl ether, pentaerythritol polyglycidyl ether, diglycerol polyglycidyl ether, glycerol polyglycidyl ether, trimethylolpropane polyglycidyl ether, neopentyl glycol diglycidyl ether, 1,6-hexanediol diglycidyl ether, and compounds represented by the following [3-1] to [3-16]: [ka] [ka] Compounds such as the above can be mentioned.

[0031] Examples of the dicarboxylic acid compound include the dicarboxylic acid compounds described above.

[0032] The polymer that can be used has a weight average molecular weight of, for example, 1,000 to 100,000, or 1,500 to 50,000, or 2,000 to 30,000, or 3,000 to 20,000.

[0033] Preferably, the polymer has the formula (10): [ka] (In formula (10), A represents a direct bond or -C(=O)-, and Ar represents a benzene ring, a naphthalene ring, or an anthracene ring which may be substituted with an alkyl group having 1 to 6 carbon atoms, a halogen atom, a hydroxy group, a carboxyl group, an amino group, an alkoxy group having 1 to 6 carbon atoms, an alkylthio group having 1 to 6 carbon atoms, a cyano group, an acetyl group, an acetyloxy group, an alkoxycarbonyl group having 1 to 6 carbon atoms, a nitro group, a nitroso group, an amido group, an imido group, an alkoxysulfonyl group having 1 to 6 carbon atoms, or a sulfonamide group.)

[0034] In addition, examples of the alkyl group in formula (10) include a methyl group, an ethyl group, an n-butyl group, a t-butyl group, an isopropyl group, a cyclohexyl group, etc.; examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom; examples of the alkoxy group include a methoxy group, an ethoxy group, a butoxy group, etc.; examples of the alkylthio group include a methylthio group, an ethylthio group, a butylthio group, etc.; examples of the alkoxycarbonyl group include a methoxycarbonyl group, an ethoxycarbonyl group, a isopropoxycarbonyl group, etc.; and examples of the alkoxysulfonyl group include a methoxysulfonyl group, an ethoxysulfonyl group, etc.

[0035] The above polymer can be produced, for example, by the method described in Japanese Patent No. 5,041,175.

[0036] [Monovalent organic groups derived from low molecular weight compounds] The low molecular weight compound from which the monovalent organic group is derived is not particularly limited, but considering the risk of volatilization during firing, it is preferable that the molecular weight is 300 or more. The upper limit of the molecular weight is, for example, 999. Some preferred specific examples are as follows. * represents a bond. [ka] [ka] [ka] [ka] [ka] [ka]

[0037] The monovalent organic group may be the above-mentioned low molecular weight compound plus a spacer. Examples of spacers are -CH-, -(CH 2 ) n Examples of the spacer include one or a combination of two or more of -(n=1 to 20), -CH=CH-, -CH≡CH-, -N=N-, -NH-, -NHR-, -NHCO-, -NRCO-, -S-, -COO-, -O-, -CO-, -CH=N-, -CH(OH)- and phenylene. Two or more of these spacers may be linked together.

[0038] [Specific examples of preferred compounds having the partial structure represented by formula (1)] Examples of preferred compounds having the partial structure represented by formula (1) are as follows.

[0039] Examples of the polymer having the partial structure represented by formula (1) include structural units represented by the following formulae (A-1) to (A-6). [ka]

[0040] The polymer having the partial structure represented by formula (1) may be a copolymer further having structural units represented by the following formulae (A-7) to (A-18). [ka]

[0041] The molar ratio of the unit structure having the partial structure of formula (1) to the entire polymer is 1 to 100 mol %, preferably 10 to 100 mol %. The unit structure having the partial structure of formula (1) may be of one type or two or more types. When the polymer is a copolymer having a unit structure having a partial structure other than that represented by formula (1), the molar ratio is the remainder of the portion occupied by the unit structure having the partial structure represented by formula (1) relative to the entire copolymer, and the unit structure having the partial structure other than that represented by formula (1) may be of one type or two or more types.

[0042] Further, an example of the compound or polymer having the partial structure represented by formula (1) is a reaction product (D) obtained from an epoxy compound or resin represented by formula (B) below and a proton-generating compound having the partial structure represented by formula (1) above, represented by formula (C) below.

[0043] Examples of the epoxy compound (B) include glycidyl ether compounds, glycidyl ester compounds, glycidyl group-containing isocyanurates, epoxycyclohexyl compounds, epoxy group-substituted cyclohexyl compounds, and resins thereof. Examples of the epoxy compound (B) used in the present invention include the following. [ka]

[0044] The compound represented by formula (B-1) is available from Nissan Chemical Industries, Ltd. under the trade name TEPIC-SS. Formula (B-2) is available from Shikoku Chemical Industries Co., Ltd. under the trade name MA-DGIC. The compound represented by formula (B-3) is available from Nagase Chemtec Corporation under the trade name EX-411. The compound represented by formula (B-4) is available from Nagase Chemtec Corporation under the trade name EX-521. The compound represented by formula (B-7) is available from Nippon Kayaku Co., Ltd. under the trade name RE-810NM. The compound represented by formula (B-8) is available from Showa Denko KK under the trade name BATG. The compound represented by formula (B-9) is available from Nagase Chemtec Corporation under the trade name EX-711. The compound represented by formula (B-10) is available from DIC Corporation under the trade name YD-4032D. Compound (B-11) is available from DIC Corporation under the trade name HP-4770. The compound represented by formula (B-12) is available from Nippon Steel & Sumikin Chemical Co., Ltd. under the trade name YH-434L. The compound represented by formula (B-13) is available from DIC Corporation under the trade name EPICLON HP-4700. The compound represented by formula (B-14) is available from Asahi Yukizai Kogyo Co., Ltd. under the trade name TEP-G. The formula (B-15) is Epolead GT401 (trade name) manufactured by Daicel Corporation, and a, b, c, and d are each 0 or 1, and a+b+c+d=1. The compound represented by formula (B-16) is available from Daicel Corporation under the trade name EHPE-3150. The compound represented by formula (B-17) is available from DIC Corporation under the trade name HP-7200L. Compound (B-18) is available from Nippon Kayaku Co., Ltd. under the trade name EPPN-201. The compound represented by formula (B-19) is available from Asahi Kasei Epoxy Corporation under the trade name ECN-1229. The compound of formula (B-20) is available from Nippon Kayaku Co., Ltd. under the trade name EPPN-501H. The compound represented by formula (B-21) is available from Nippon Kayaku Co., Ltd. under the trade name NC-2000L. Compound (B-22) is available from Nippon Kayaku Co., Ltd. under the trade name NC-3000L. The compound represented by formula (B-23) is available from Nippon Kayaku Co., Ltd. under the trade name NC-7000L. Compound (B-24) is available from Nippon Kayaku Co., Ltd. under the trade name NC-7300L. Compound (B-25) is available from Nippon Kayaku Co., Ltd. under the trade name NC-3500. The compound represented by formula (B-26) is available from DIC Corporation under the trade name EPICLON HP-5000. Compound (B-27) is available from Nippon Kayaku Co., Ltd. under the trade name FAE-2500. Compound (B-28) is available from Nippon Kayaku Co., Ltd. under the trade name NC-6000.

[0045] Examples of the proton-generating compound (C) having the partial structure represented by the formula (1) include the following: Preferred are 5-hydroxy-1,3-benzodioxole (sesamol) and piperonyl acid. [ka]

[0046] Specific examples of the reactant (D) having the partial structure represented by the above formula (1) include, but are not limited to, the following. [ka]

[0047] Further, examples of the compound or polymer having the partial structure represented by the formula (1) include a novolak resin (E) obtained from a phenolic hydroxyl group-containing compound or aromatic amine and an aldehyde having the partial structure represented by the formula (1), or from a phenolic hydroxyl group-containing compound having the partial structure represented by the formula (1) and an aldehyde.

[0048] The aldehyde having the partial structure represented by the formula (1) is preferably heliotropine (piperonal), and the phenolic hydroxyl group-containing compound having the partial structure represented by the formula (1) is preferably 5-hydroxy-1,3-benzodioxole (sesamol).

[0049] Specific examples of the reactant (E) having the partial structure represented by the above formula (1) include, but are not limited to, the following. [ka] [ka]

[0050] [Crosslinking agent] The resist underlayer film forming composition of the present invention may contain a crosslinking agent component. Examples of the crosslinking agent include melamine-based, substituted urea-based, and polymers thereof. A crosslinking agent having at least two crosslinking-forming substituents is preferred, and is a compound such as methoxymethylated glycoluril, butoxymethylated glycoluril, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguwanamine, butoxymethylated benzoguwanamine, methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, or methoxymethylated thiourea. Condensates of these compounds may also be used.

[0051] In addition, a crosslinking agent having high heat resistance can be used as the crosslinking agent. As the crosslinking agent having high heat resistance, a compound containing a crosslinking-forming substituent having an aromatic ring (e.g., a benzene ring or a naphthalene ring) in the molecule can be used.

[0052] The compound may be a compound having a partial structure of the following formula (5-1), or a polymer or oligomer having a repeating unit of the following formula (5-2). [ka] Above R 11 , R 12 , R 13 , and R 14 is a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and the alkyl groups mentioned above can be used. m1 is 1≦m1≦6-m2, m2 is 1≦m2≦5, m3 is 1≦m3≦4-m2, and m4 is 1≦m4≦3.

[0053] Examples of the compounds, polymers and oligomers of the formula (5-1) and the formula (5-2) are shown below. [ka] [ka]

[0054] The above compounds are available as products of Asahi Yukizai Kogyo Co., Ltd. and Honshu Chemical Industry Co., Ltd. For example, among the above crosslinking agents, the compound of formula (6-22) is available from Asahi Yukizai Kogyo Co., Ltd. under the trade name TMOM-BP.

[0055] [Crosslinking catalyst] The protective film-forming composition of the present invention may contain a crosslinking catalyst as an optional component in order to promote the crosslinking reaction. As the crosslinking catalyst, in addition to an acidic compound or a basic compound, a compound that generates an acid or a base by heat may be used, but a crosslinking acid catalyst is preferable. As the acidic compound, a sulfonic acid compound or a carboxylic acid compound may be used, and as a compound that generates an acid by heat, a thermal acid generator may be used.

[0056] Examples of sulfonic acid compounds or carboxylic acid compounds include p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium trifluoromethanesulfonate, pyridinium-p-toluenesulfonate, salicylic acid, camphorsulfonic acid, 5-sulfosalicylic acid, 4-chlorobenzenesulfonic acid, 4-hydroxybenzenesulfonic acid, pyridinium-4-hydroxybenzenesulfonic acid, benzenedisulfonic acid, 1-naphthalenesulfonic acid, 4-nitrobenzenesulfonic acid, citric acid, benzoic acid, and hydroxybenzoic acid.

[0057] Examples of thermal acid generators include K-PURE (registered trademark) CXC-1612, CXC-1614, TAG-2172, TAG-2179, TAG-2678, and TAG2689 (all manufactured by King Industries), and SI-45, SI-60, SI-80, SI-100, SI-110, and SI-150 (all manufactured by Sanshin Chemical Industry Co., Ltd.).

[0058] These crosslinking catalysts can be used alone or in combination of two or more. As the basic compound, an amine compound or an ammonium hydroxide compound can be used, and as the compound that generates a base by heat, urea can be used.

[0059] Examples of the amine compound include tertiary amines such as triethanolamine, tributanolamine, trimethylamine, triethylamine, tri-normal propylamine, triisopropylamine, tri-normal butylamine, tri-tert-butylamine, tri-normal octylamine, triisopropanolamine, phenyldiethanolamine, stearyldiethanolamine, and diazabicyclooctane, and aromatic amines such as pyridine and 4-dimethylaminopyridine.Other examples of the amine compound include primary amines such as benzylamine and normal butylamine, and secondary amines such as diethylamine and di-normal butylamine.These amine compounds can be used alone or in combination of two or more.

[0060] Examples of ammonium hydroxide compounds include tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, benzyltrimethylammonium hydroxide, benzyltriethylammonium hydroxide, cetyltrimethylammonium hydroxide, phenyltrimethylammonium hydroxide, and phenyltriethylammonium hydroxide.

[0061] As a compound that generates a base by heat, for example, a compound that has a thermolabile group such as an amide group, a urethane group, or an aziridine group and generates an amine by heating can be used. Other examples of the compound that generates a base by heat include urea, benzyltrimethylammonium chloride, benzyltriethylammonium chloride, benzyldimethylphenylammonium chloride, benzyldodecyldimethylammonium chloride, benzyltributylammonium chloride, and choline chloride.

[0062] When the protective film-forming composition contains a crosslinking catalyst, the crosslinking catalyst is contained in an amount of 0.0001 to 20% by weight, preferably 0.01 to 15% by weight, and more preferably 0.1 to 10% by weight, based on the total solid content of the protective film-forming composition.

[0063] [Surfactants] The protective film-forming composition of the present invention may contain a surfactant as an optional component to improve the coating property on the semiconductor substrate. Examples of the surfactant include polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, and polyoxyethylene oleyl ether, polyoxyethylene alkylaryl ethers such as polyoxyethylene octylphenyl ether and polyoxyethylene nonylphenyl ether, polyoxyethylene-polyoxypropylene block copolymers, sorbitan fatty acid esters such as sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, and sorbitan tristearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, and polyoxyethylene sorbitan monostearate. nonionic surfactants such as polyoxyethylene sorbitan fatty acid esters, such as polyoxyethylene sorbitan trioleate and polyoxyethylene sorbitan tristearate; fluorosurfactants such as F-TOP (registered trademark) EF301, EF303, and EF352 (manufactured by Mitsubishi Materials Electronic Chemicals Co., Ltd.), Megafac (registered trademark) F171, F173, R-30, R-30N, R-40, and R-40-LM (manufactured by DIC Corporation), Fluorad FC430 and FC431 (manufactured by Sumitomo 3M Limited), Asahiguard (registered trademark) AG710, Surflon (registered trademark) S-382, SC101, SC102, SC103, SC104, SC105, and SC106 (manufactured by Asahi Glass Co., Ltd.); and organosiloxane polymer KP341 (manufactured by Shin-Etsu Chemical Co., Ltd.). These surfactants can be used alone or in combination of two or more. When the protective film-forming composition contains a surfactant, the content of the surfactant is 0.0001 to 10% by weight, preferably 0.01 to 5% by weight, based on the total solid content of the protective film-forming composition.

[0064] [solvent] The protective film-forming composition of the present invention can be prepared by dissolving the above-mentioned components in an organic solvent, and is used in the state of a homogeneous solution.

[0065] As the solvent for the protective film-forming composition according to the present invention, any solvent that can dissolve the compound containing at least one pair of two hydroxyl groups adjacent to each other in the molecule or the polymer thereof can be used without any particular limitation. In particular, since the protective film-forming composition according to the present invention is used in a homogeneous solution state, it is recommended to use a solvent that is generally used in lithography processes in combination, taking into consideration its coating performance.

[0066] Examples of the organic solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, and cyclohexanone. Examples of the solvent include cyclopentane, cycloheptanone, 4-methyl-2-pentanol, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobutyrate, ethyl ethoxyacetate, 2-hydroxyethyl acetate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, 2-heptanone, methoxycyclopentane, anisole, γ-butyrolactone, N-methylpyrrolidone, N,N-dimethylformamide, and N,N-dimethylacetamide. These solvents can be used alone or in combination of two or more.

[0067] Among these solvents, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, butyl lactate, cyclohexanone, etc. are preferred, with propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate being particularly preferred.

[0068] [Other ingredients] The protective film-forming composition of the present invention may contain a light absorbing agent, a rheology control agent, an adhesive auxiliary, etc. The rheology control agent is effective in improving the fluidity of the protective film-forming composition. The adhesive auxiliary is effective in improving the adhesion between the semiconductor substrate or resist and the underlayer film.

[0069] Examples of the light absorbing agent include commercially available light absorbing agents described in "Technology and Market of Industrial Dyes" (CMC Publishing) and "Dye Handbook" (edited by the Society of Organic Synthesis Chemistry), such as CI Disperse Yellow 1, 3, 4, 5, 7, 8, 13, 23, 31, 49, 50, 51, 54, 60, 64, 66, 68, 79, 82, 88, 90, 93, 102, 114, and 124; CID isperse Orange 1, 5, 13, 25, 29, 30, 31, 44, 57, 72, and 73; CI Disperse Red 1, 5, 7, 13, 17, 19, 43, 50, 54, 58, 65, 72, 73, 88, 117, 137, 143, 199, and 210; CI Disperse Violet 43; CI Disperse Blue 96; CI Fluorescent Brightening Agent Suitable examples of the light absorbing agent that can be used include CI Solvent Orange 2 and 45, CI Solvent Red 1, 3, 8, 23, 24, 25, 27 and 49, CI Pigment Green 10, and CI Pigment Brown 2. The light absorbing agent is usually blended in an amount of 10% by mass or less, and preferably 5% by mass or less, based on the total solid content of the protective film-forming composition.

[0070] The rheology control agent is mainly added to improve the fluidity of the protective film forming composition, and to improve the film thickness uniformity of the resist underlayer film and the filling property of the protective film forming composition into the hole, especially in the baking process.Specific examples include phthalic acid derivatives such as dimethyl phthalate, diethyl phthalate, diisobutyl phthalate, dihexyl phthalate, and butyl isodecyl phthalate, adipic acid derivatives such as di-normal butyl adipate, diisobutyl adipate, diisooctyl adipate, and octyl decyl adipate, maleic acid derivatives such as di-normal butyl maleate, diethyl maleate, and dinonyl maleate, oleic acid derivatives such as methyl oleate, butyl oleate, and tetrahydrofurfuryl oleate, and stearic acid derivatives such as normal butyl stearate and glyceryl stearate.These rheology control agents are usually blended at a ratio of less than 30 mass% based on the total solid content of the protective film forming composition.

[0071] The adhesion promoter is added mainly for the purpose of improving the adhesion between the substrate or resist and the protective film forming composition, and in particular to prevent the resist from peeling off during development. Specific examples include chlorosilanes such as trimethylchlorosilane, dimethylmethylolchlorosilane, methyldiphenylchlorosilane, and chloromethyldimethylchlorosilane; alkoxysilanes such as trimethylmethoxysilane, dimethyldiethoxysilane, methyldimethoxysilane, dimethylmethylolethoxysilane, diphenyldimethoxysilane, and phenyltriethoxysilane; silazanes such as hexamethyldisilazane, N,N'-bis(trimethylsilyl)urea, dimethyltrimethylsilylamine, and trimethylsilylimidazole; methyloltrimethylsilane; and methyloltrimethylsilane. Examples of the adhesive auxiliary include silanes such as chlorosilane, γ-chloropropyltrimethoxysilane, γ-aminopropyltriethoxysilane, and γ-glycidoxypropyltrimethoxysilane, heterocyclic compounds such as benzotriazole, benzimidazole, indazole, imidazole, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 2-mercaptobenzoxazole, urazole, thiouracil, mercaptoimidazole, and mercaptopyrimidine, and ureas such as 1,1-dimethylurea and 1,3-dimethylurea, or thiourea compounds. These adhesive auxiliary agents are usually blended in an amount of less than 5% by mass, preferably less than 2% by mass, based on the total solid content of the protective film-forming composition.

[0072] [Protective film forming composition] The solid content of the protective film-forming composition according to the present invention is usually 0.1 to 70% by mass, preferably 0.1 to 60% by mass. The solid content is the content of all components excluding the solvent from the protective film-forming composition. The proportion of the polymer in the solid content is preferably 1 to 100% by mass, 1 to 99.9% by mass, 50 to 99.9% by mass, 50 to 95% by mass, and 50 to 90% by mass, in that order.

[0073] [Method of manufacturing a substrate having a resist pattern and a semiconductor device] Hereinafter, a method for producing a substrate having a resist pattern and a method for producing a semiconductor device using the protective film-forming composition according to the present invention will be described.

[0074] The substrate having a resist pattern according to the present invention can be produced by applying the above-mentioned protective film-forming composition onto a semiconductor substrate and baking it. Examples of semiconductor substrates to which the protective film-forming composition of the present invention can be applied include silicon wafers, germanium wafers, and compound semiconductor wafers such as gallium arsenide, indium phosphide, gallium nitride, indium nitride, and aluminum nitride. When using a semiconductor substrate having an inorganic film formed on its surface, the inorganic film is formed by, for example, ALD (atomic layer deposition), CVD (chemical vapor deposition), reactive sputtering, ion plating, vacuum deposition, or spin-coating (spin-on glass: SOG). Examples of the inorganic film include polysilicon film, silicon oxide film, silicon nitride film, BPSG (Boro-Phospho Silicate Glass) film, titanium nitride film, titanium nitride oxide film, tungsten film, gallium nitride film, and gallium arsenide film.

[0075] The protective film-forming composition of the present invention is applied onto such a semiconductor substrate by a suitable application method such as a spinner or coater. Then, the protective film is formed by baking using a heating means such as a hot plate. The baking conditions are appropriately selected from a baking temperature of 100° C. to 400° C. and a baking time of 0.3 minutes to 60 minutes. Preferably, the baking temperature is 120° C. to 350° C., the baking time is 0.5 minutes to 30 minutes, and more preferably, the baking temperature is 150° C. to 300° C., and the baking time is 0.8 minutes to 10 minutes. The thickness of the protective film formed is, for example, 0.001 μm to 10 μm, preferably 0.002 μm to 1 μm, and more preferably 0.005 μm to 0.5 μm. If the baking temperature is lower than the above range, crosslinking becomes insufficient, and the formed protective film may not be resistant to a resist solvent or a basic hydrogen peroxide aqueous solution. On the other hand, if the baking temperature is higher than the above range, the protective film may be decomposed by heat.

[0076] Exposure is performed through a mask (reticle) for forming a predetermined pattern, and for example, i-rays, KrF excimer laser, ArF excimer laser, EUV (extreme ultraviolet) or EB (electron beam) is used. An alkaline developer is used for development, and the development temperature is appropriately selected from 5°C to 50°C and the development time is appropriately selected from 10 seconds to 300 seconds. As the alkaline developer, an aqueous solution of an alkaline such as inorganic alkaline such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, ammonia water, primary amines such as ethylamine, n-propylamine, secondary amines such as diethylamine, di-n-butylamine, tertiary amines such as triethylamine, methyldiethylamine, alcohol amines such as dimethylethanolamine, triethanolamine, quaternary ammonium salts such as tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline, cyclic amines such as pyrrole, piperidine, etc. can be used. Furthermore, an appropriate amount of an alcohol such as isopropyl alcohol, a nonionic surfactant, etc. can be added to the aqueous solution of the alkaline. Among these, the preferred developer is a quaternary ammonium salt, more preferably tetramethylammonium hydroxide and choline. Furthermore, a surfactant or the like can be added to these developers. Instead of the alkaline developer, a method can be used in which development is performed with an organic solvent such as butyl acetate to develop the part of the photoresist where the alkaline dissolution rate is not improved.

[0077] Next, the protective film is dry-etched using the formed resist pattern as a mask, whereby if the inorganic film is formed on the surface of the semiconductor substrate used, the surface of the inorganic film is exposed, and if the inorganic film is not formed on the surface of the semiconductor substrate used, the surface of the semiconductor substrate is exposed.

[0078] Furthermore, the protective film after dry etching (and the resist pattern if any remains on the protective film) is used as a mask to perform wet etching using a wet etching solution for semiconductors, thereby forming a desired pattern. As the semiconductor wet etching solution, a general chemical solution for etching semiconductor wafers can be used, and for example, either an acidic substance or a basic substance can be used. Examples of substances that exhibit acidity include hydrogen peroxide, hydrofluoric acid, ammonium fluoride, acidic ammonium fluoride, ammonium hydrogen fluoride, buffered hydrofluoric acid, hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid, and mixtures of these. Examples of substances that exhibit basicity include basic hydrogen peroxide solution, which is obtained by mixing an organic amine such as ammonia, sodium hydroxide, potassium hydroxide, sodium cyanide, potassium cyanide, or triethanolamine with hydrogen peroxide solution to make the pH basic. A specific example is SC-1 (ammonia-hydrogen peroxide solution). Other substances that can make the pH basic, such as mixing urea with hydrogen peroxide solution and heating to cause thermal decomposition of the urea to generate ammonia, and finally making the pH basic, can also be used as a wet etching chemical. Among these, acidic hydrogen peroxide solution or basic hydrogen peroxide solution is preferable, and basic hydrogen peroxide solution is particularly preferable. These chemical solutions may contain additives such as a surfactant. The temperature at which the semiconductor wet etching solution is used is preferably 25° C. to 90° C., and more preferably 40° C. to 80° C. The wet etching time is preferably 0.5 to 30 minutes, and more preferably 1 to 20 minutes. EXAMPLES

[0079] The present invention will be described in more detail below with reference to examples, but the present invention is not limited to the following examples in any way. The apparatuses used for measuring the weight average molecular weight of the polymers obtained in the following synthesis examples are shown below. Equipment: Tosoh Corporation HLC-8320GPC GPC column: Shodex (registered trademark) Asahipak (registered trademark) (Showa Denko K.K.) Column temperature: 40℃ Flow rate: 0.6mL / min Eluent: N,N-dimethylformamide (DMF) Standard sample: Polystyrene (Tosoh Corporation)

[0080] <Example 1> A solution of 16.00g of glycidyl methacrylate, 4.53g of 2,2'-azobis(isobutyronitrile), and 65.68g of propylene glycol monomethyl ether was added to a dropping funnel, and dropped into a reaction flask containing 16.48g of propylene glycol monomethyl ether at 100°C under a nitrogen atmosphere, and heated and stirred for 13 hours. 5.72g of piperonyl acid, 0.32g of ethyltriphenylphosphonium bromide, and 20.04g of propylene glycol monomethyl ether were added to 30.00g of the obtained solution (epoxy value 676g / eq), and the mixture was heated and refluxed under a nitrogen atmosphere for 20 hours. 11g of cation exchange resin (product name: Dowex [registered trademark] 550A, Muromachi Technos Co., Ltd.) and 11g of anion exchange resin (product name: Amberlite [registered trademark] 15JWET, Organo Corporation) were added to the obtained solution, and the mixture was subjected to ion exchange treatment at room temperature for 4 hours. By separating the ion exchange resin, a resin solution corresponding to the formula (X-1) was obtained, and the weight average molecular weight Mw measured in terms of polystyrene by GPC was 4,100.

[0081] [ka]

[0082] To 4.59 g of the obtained resin solution (solid content 17.93% by weight), 0.21 g of 3,3',5,5'-tetrakis(methoxymethyl)-4,4'-dihydroxybiphenyl (product name: TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) as a crosslinking agent, 0.02 g of K-PURE TAG-2689 (manufactured by King Industries) as a crosslinking acid catalyst, 0.001 g of surfactant (manufactured by DIC Corporation, product name: Megafac [product name] R-40, fluorine-based surfactant), 8.79 g of propylene glycol monomethyl ether, and 1.40 g of propylene glycol monomethyl ether acetate were added to prepare a solution of a protective film-forming composition.

[0083] <Example 2> A solution of 5.50 g of glycerin monomethacrylate (product name: Blenmer GLM, manufactured by NOF Corp.), 5.09 g of 5-vinylbenzo[d][1,3]dioxole (manufactured by Cool Pharm LTD.), 0.66 g of 2,2'-azobis(isobutyronitrile), and 35.99 g of propylene glycol monomethyl ether was added to a dropping funnel, and dropped into a reaction flask containing 9.00 g of propylene glycol monomethyl ether under a nitrogen atmosphere at 100°C, and heated and stirred for 17 hours. 11 g of a cation exchange resin (product name: Dowex [registered trademark] 550A, Muromachi Technos Co., Ltd.) and 11 g of anion exchange resin (product name: Amberlite [registered trademark] 15JWET, Organo Corporation) were added to the resulting solution, and ion exchange treatment was performed at room temperature for 4 hours. By separating the ion exchange resin, a resin solution corresponding to the formula (X-2) was obtained, and the weight average molecular weight Mw measured in terms of polystyrene by GPC was 10,800.

[0084] [ka]

[0085] To 5.10 g of the obtained resin solution (solid content 16.12 wt%), 0.21 g of 3,3',5,5'-tetrakis(methoxymethyl)-4,4'-dihydroxybiphenyl (product name: TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) as a crosslinking agent, 0.02 g of K-PURE TAG-2689 (manufactured by King Industries) as a crosslinking acid catalyst, 0.001 g of surfactant (manufactured by DIC Corporation, product name: Megafac [product name] R-40, fluorine-based surfactant), 8.27 g of propylene glycol monomethyl ether, and 1.40 g of propylene glycol monomethyl ether acetate were added to prepare a solution of a protective film-forming composition.

[0086] <Example 3> A solution of 5.00 g of glycidyl methacrylate, 5.21 g of 5-vinylbenzo[d][1,3]dioxole (manufactured by Cool Pharm LTD.), 0.58 g of 2,2'-azobis(isobutyronitrile), and 34.53 g of propylene glycol monomethyl ether was added to a dropping funnel, and dropped into a reaction flask containing 8.63 g of propylene glycol monomethyl ether under a nitrogen atmosphere at 100°C, and heated and stirred for 20 hours. 11 g of cation exchange resin (product name: Dowex [registered trademark] 550A, Muromachi Technos Co., Ltd.) and 11 g of anion exchange resin (product name: Amberlite [registered trademark] 15JWET, Organo Corporation) were added to the resulting solution, and ion exchange treatment was performed at room temperature for 4 hours. By separating the ion exchange resin, a resin solution corresponding to formula (X-3) was obtained, and the weight average molecular weight Mw measured in terms of polystyrene by GPC was 9000.

[0087] [ka]

[0088] To 4.74 g of the obtained resin solution (solid content 17.35% by weight), 0.21 g of 3,3',5,5'-tetrakis(methoxymethyl)-4,4'-dihydroxybiphenyl (product name: TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) as a crosslinking agent, 0.02 g of K-PURE TAG-2689 (manufactured by King Industries) as a crosslinking acid catalyst, 0.001 g of surfactant (manufactured by DIC Corporation, product name: Megafac [product name] R-40, fluorine-based surfactant), 8.64 g of propylene glycol monomethyl ether, and 1.40 g of propylene glycol monomethyl ether acetate were added to prepare a solution of a protective film-forming composition.

[0089] <Comparative Example 1> A solution of a protective film-forming composition was prepared by adding 0.82 g of polyparahydroxystyrene (product name: VP-8000, manufactured by Nippon Soda Co., Ltd.), 0.21 g of 3,3',5,5'-tetrakis(methoxymethyl)-4,4'-dihydroxybiphenyl (product name: TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) as a crosslinking agent, 0.02 g of K-PURE TAG-2689 (manufactured by King Industries) as a crosslinking acid catalyst, 0.001 g of surfactant (manufactured by DIC Corporation, product name: Megafac [product name] R-40, fluorine-based surfactant), 12.56 g of propylene glycol monomethyl ether, and 1.40 g of propylene glycol monomethyl ether acetate.

[0090] <Comparative Example 2> A solution of 14.00 g of 4-hydroxyphenyl methacrylate (product name: PQMA, manufactured by Showa Denko K.K.), 1.13 g of 2,2'-azobis(isobutyronitrile), and 42.37 g of propylene glycol monomethyl ether was added to a dropping funnel, and dropped into a reaction flask containing 18.16 g of propylene glycol monomethyl ether under a nitrogen atmosphere at 100°C, and heated and stirred for 14 hours. 15 g of cation exchange resin (product name: Dowex [registered trademark] 550A, Muromachi Technos Co., Ltd.) and 15 g of anion exchange resin (product name: Amberlite [registered trademark] 15JWET, Organo Corporation) were added to the obtained solution, and ion exchange treatment was performed at room temperature for 4 hours. By separating the ion exchange resin, a resin solution corresponding to formula (Y-1) was obtained, and the weight average molecular weight Mw measured in terms of polystyrene by GPC was 11,000.

[0091] [ka]

[0092] A solution of a protective film-forming composition was prepared by adding 4.47 g of the obtained resin solution (solid content 18.41% by weight), 0.21 g of 3,3',5,5'-tetrakis(methoxymethyl)-4,4'-dihydroxybiphenyl (product name: TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) as a crosslinking agent, 0.02 g of K-PURE TAG-2689 (manufactured by King Industries Co., Ltd.) as a crosslinking acid catalyst, 0.001 g of surfactant (manufactured by DIC Corporation, product name: Megafac [product name] R-40, fluorine-based surfactant), 8.91 g of propylene glycol monomethyl ether, and 1.40 g of propylene glycol monomethyl ether acetate.

[0093] <Comparative Synthesis Example 3> A solution of 16.00 g of glycidyl methacrylate, 4.53 g of 2,2'-azobis(isobutyronitrile), and 65.68 g of propylene glycol monomethyl ether was added to a dropping funnel, and dropped into a reaction flask containing 16.48 g of propylene glycol monomethyl ether at 100°C under a nitrogen atmosphere, and heated and stirred for 13 hours. 5.31 g of 3,4-dihydroxybenzoic acid, 0.20 g of benzyltriethylammonium chloride, and 17.89 g of propylene glycol monomethyl ether were added to 30.00 g of the resulting solution (epoxy value 676 g / eq), and the mixture was heated and refluxed with stirring for 20 hours under a nitrogen atmosphere. To the resulting solution, 11 g of a cation exchange resin (product name: Dowex (registered trademark) 550A, Muromachi Technos Co., Ltd.) and 11 g of an anion exchange resin (product name: Amberlite (registered trademark) 15JWET, Organo Corporation) were added, and the mixture was subjected to ion exchange treatment at room temperature for 4 hours. By separating the ion exchange resin, a resin solution corresponding to formula (Y-2) was obtained, and the weight average molecular weight Mw measured in terms of polystyrene by GPC was 24,400.

[0094] [ka]

[0095] To 4.47 g of the obtained resin solution (solid content 19.51% by weight), 0.21 g of 3,3',5,5'-tetrakis(methoxymethyl)-4,4'-dihydroxybiphenyl (product name: TMOM-BP, manufactured by Honshu Chemical Industry Co., Ltd.) as a crosslinking agent, 0.02 g of K-PURE TAG-2689 (manufactured by King Industries) as a crosslinking acid catalyst, 0.001 g of surfactant (manufactured by DIC Corporation, product name: Megafac [product name] R-40, fluorine-based surfactant), 9.16 g of propylene glycol monomethyl ether, and 1.40 g of propylene glycol monomethyl ether acetate were added to prepare a solution of a protective film-forming composition.

[0096] [Resist Solvent Resistance Test] Each of the protective film-forming compositions prepared in Examples 1 to 3 and Comparative Examples 1 to 3 was applied (spin-coated) onto a silicon wafer using a spin coater. The silicon wafer after application was heated on a hot plate at 215°C for 1 minute to form a coating (protective film) with a thickness of 200 nm. Next, in order to confirm the resist solvent resistance of the protective film, the silicon wafer after the protective film formation was immersed in a solvent in which propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate were mixed at a weight ratio of 7:3 for 1 minute, spin-dried, and then baked at 100°C for 30 seconds. The thickness of the protective film before and after immersion in the mixed solvent was measured using an optical interference thickness meter. The resist solvent resistance was evaluated by calculating the percent reduction in thickness of the protective film removed by solvent immersion using the formula: ((film thickness before solvent immersion) - (film thickness after solvent immersion)) ÷ (film thickness before solvent immersion) x 100. A film thickness reduction rate of approximately 1% or less is considered to be within the acceptable range.

[0097] [Table 1]

[0098] From the above results, the change in film thickness was very small even after immersion in the resist solvent in Examples 1 to 3 and Comparative Examples 1 to 3, and they showed good resist solvent resistance. Therefore, all of the examples have sufficient resist solvent resistance to function as a protective film.

[0099] [Test for resistance to basic hydrogen peroxide] To evaluate the resistance to basic hydrogen peroxide solution, the protective film-forming compositions prepared in Examples 1 to 3 and Comparative Examples 1 to 3, which showed good resist solvent resistance in the resist solvent resistance test, were applied to a TiN-deposited substrate with a thickness of 50 nm, and heated at 215° C. for 1 minute to form a film with a thickness of 200 nm. Next, 28% ammonia water, 33% hydrogen peroxide, and water were mixed in a weight ratio of 1:1:2 to prepare basic hydrogen peroxide solution. The TiN-deposited substrate to which the protective film-forming composition was applied was immersed in the basic hydrogen peroxide solution heated to 50° C., and the time from immediately after immersion until the protective film peeled off from the substrate was measured. The results are shown in Table 2.

[0100] [Table 2]

[0101] The above results show that the coating films of Examples 1 to 3 are less likely to peel off from the substrate in the presence of basic hydrogen peroxide compared to Comparative Examples 1 to 3. That is, Examples 1 to 3 exhibit better chemical resistance to basic hydrogen peroxide than Comparative Examples 1 to 3, and are useful as protective films against basic hydrogen peroxide. [Industrial Applicability]

[0102] According to the present invention, it is possible to provide a composition for forming a protective film having excellent resistance to a basic hydrogen peroxide aqueous solution used in RCA cleaning in the lithography process in semiconductor manufacturing.

Claims

1. A protective film-forming composition for a semiconductor wet etching solution selected from an acidic aqueous hydrogen peroxide solution and a basic aqueous hydrogen peroxide solution, comprising a polymer of a compound containing at least one acetal structure in the molecule and having a benzodioxole group or a 2,2-dimethylbenzodioxole group in a side chain, and a solvent.

2. The protective film-forming composition according to claim 1 , wherein the polymer is an acrylic polymer or a methacrylic polymer.

3. The protective film-forming composition according to claim 1 or 2, further comprising a crosslinking catalyst.

4. The protective film-forming composition according to claim 1 , further comprising a crosslinking agent.

5. The protective film-forming composition according to claim 1 , further comprising a surfactant.

6. The protective film-forming composition according to any one of claims 1 to 5, for producing a substrate with a resist pattern, comprising a step of applying the composition onto a semiconductor substrate and baking the composition to form a protective film as a resist underlayer film, the protective film-forming composition being used in the production of a semiconductor.

7. A method for manufacturing a semiconductor device, comprising the steps of forming a protective film on a semiconductor substrate, on whose surface an inorganic film may be formed, using a protective film-forming composition for a wet etching solution for semiconductors, the protective film comprising a polymer of a compound containing at least one acetal structure in the molecule and having a 2,2-dimethylbenzodioxole group in a side chain, and a solvent, forming a resist pattern on the protective film, dry etching the protective film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate, and wet etching and cleaning the inorganic film or the semiconductor substrate using the protective film after dry etching as a mask, The semiconductor wet etching solution is a basic hydrogen peroxide aqueous solution. A method for manufacturing a semiconductor device.

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