Packaging substrate and semiconductor package including the same

Abstract

To provide a packaging substrate having excellent durability against thermal shock and mechanical shock, and a semiconductor package including the packaging substrate.SOLUTION: A packaging substrate 100 according to an embodiment includes a glass core 10. The glass core includes a through via penetrating in a thickness direction of the glass core. The glass core has a surface. The packaging substrate includes a crack prevention layer 20 surrounding at least a portion of the surface of the glass core. The packaging substrate has a ratio of the thickness of the crack prevention layer to the thickness of the glass core of 0.0001 to 0.05.SELECTED DRAWING: Figure 1A

Description

[Technical field]

[0001] The embodiment relates to a packaging substrate and a semiconductor package including the same. [Background technology]

[0002] In manufacturing electronic components, the process of creating circuits on a semiconductor wafer is called the front-end process (FE: Front-End), and the process of assembling the wafer so that it can be used in an actual product is called the back-end process (BE: Back-End), which includes the packaging process.

[0003] The four core technologies of the semiconductor industry that have enabled the recent rapid development of electronic products are semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology. Semiconductor technology has evolved into various forms, such as nano-level line widths below the micron level, over 10 million cells, high-speed operation, and large amounts of heat dissipation, but the technology to perfectly package these has not been supported. As a result, the electrical performance of semiconductors is sometimes determined by the packaging technology and the resulting electrical connections, rather than the performance of the semiconductor technology itself.

[0004] The packaging substrate is made of ceramic or resin. Since the ceramic substrate has a high resistance or a high dielectric constant, it is not easy to mount a high-performance, high-frequency semiconductor element on it. Although a resin substrate can mount a relatively high-performance, high-frequency semiconductor element, there is a limit to how much the wiring pitch can be reduced.

[0005] Recently, research has been conducted into the application of silicon and glass to high-end packaging substrates. By forming through holes in silicon or glass substrates and filling the through holes with conductive materials, the wiring length between the device and the motherboard can be shortened, resulting in excellent electrical characteristics. [Prior art documents] [Patent documents]

[0006] [Patent Document 1] Korean Patent No. 10-1067109 Summary of the Invention [Problem to be solved by the invention]

[0007] An object of the embodiment is to provide a packaging substrate having excellent durability against thermal shock and mechanical shock, and a semiconductor package including the same. [Means for solving the problem]

[0008] A packaging substrate according to one embodiment of the present disclosure includes a glass core.

[0009] The glass core includes a through via that penetrates the glass core in a thickness direction.

[0010] The glass core has a surface.

[0011] The packaging substrate includes a crack prevention layer surrounding at least a portion of a surface of the glass core.

[0012] In the packaging substrate, the ratio of the thickness of the crack prevention layer to the thickness of the glass core is 0.0001 to 0.05.

[0013] The anti-crack layer may have a tensile strength of 1 Mpa to 20 Mpa.

[0014] The crack prevention layer may have a linear thermal expansion coefficient of 100 ppm / °C to 800 ppm / °C.

[0015] The crack prevention layer may have a dielectric constant of 4 or less at a frequency of 100 Hz.

[0016] The packaging substrate may include a first electrically conductive layer disposed on the crack prevention layer.

[0017] The peel strength of the first electrically conductive layer relative to the surface of the crack prevention layer may be 300 gf or more.

[0018] The packaging substrate may further include an adhesion enhancing layer disposed between the elastic layer and the first electrically conductive layer.

[0019] The crack prevention layer may be subjected to a surface roughening treatment.

[0020] At least a portion of the crack prevention layer may be disposed in contact with a surface of the glass core.

[0021] The peel strength of the crack prevention layer relative to the surface of the glass core may be 400 gf or more.

[0022] The crack prevention layer may include a silicone elastomer.

[0023] The surface of the glass core may include an upper surface and a side surface connected to the upper surface and extending in a thickness direction of the glass core.

[0024] The crack prevention layer may surround a side surface of the glass core.

[0025] The through via may include an interior space and a via inner diameter surface surrounding the interior space.

[0026] The crack prevention layer may be disposed between the internal space and an inner diameter surface of the via.

[0027] The minimum diameter of the internal space may be 50 μm or more.

[0028] A semiconductor package according to another embodiment of the present disclosure includes the packaging substrate and a semiconductor device mounted on the packaging substrate. Effect of the Invention

[0029] The packaging substrate of the embodiment may exhibit excellent durability against thermal shock and mechanical shock. [Brief description of the drawings]

[0030] [Figure 1A] 1 is a cross-sectional view illustrating a packaging substrate according to an embodiment of the present invention; [Figure 1B] FIG. 2 is a plan view illustrating a packaging substrate according to an embodiment of the present invention; [Diagram 2] FIG. 1B is an enlarged view of A in FIG. 1A. [Diagram 3] 11 is a cross-sectional view illustrating a packaging substrate according to another embodiment of the present invention; FIG. [Figure 4] 11 is a cross-sectional view illustrating a packaging substrate according to still another embodiment of the present invention; FIG. BEST MODE FOR CARRYING OUT THEINVENTION

[0031] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS In the following, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. However, the present invention may be embodied in various different forms and is not limited to the preferred embodiments described herein. The same reference numerals are used throughout the specification to refer to similar parts.

[0032] Throughout this specification, the term "combinations thereof" in a Markush form phrase means a mixture or combination of one or more selected from the group of elements set forth in the Markush form phrase, including one or more selected from the group of elements.

[0033] Throughout this specification, terms such as "first," "second," or "A," "B" are used to distinguish identical terms from one another, and singular expressions include plural expressions unless the context clearly indicates otherwise.

[0034] In this specification, the term "-" may mean that the compound includes a compound that corresponds to "-" or a derivative of "-".

[0035] In this specification, the term "B is located on A" means that B is located on A in direct contact therewith, or that B is located on A with another layer located therebetween, and is not to be interpreted as being limited to B being located in contact with the surface of A.

[0036] In this specification, the expression "B is linked to A" means that A and B are directly linked, or that A and B are linked via another component between them, and unless otherwise specified, it is not to be interpreted as being limited to A and B being directly linked.

[0037] In this specification, the term "singular" is to be construed as including the singular or plural as the context requires, unless otherwise specified.

[0038] In this specification, the shape, relative size, angle, etc. of each component in the drawings are illustrative and may be exaggerated for the purpose of explanation, and the rights should not be interpreted as being limited to the drawings.

[0039] In this specification, "A and B are adjacent" means that A and B are adjacent to each other, or A and B are not adjacent to each other but are located close to each other. In this specification, the expression "A and B are adjacent to each other" is not limited to being adjacent to each other unless otherwise specified.

[0040] In this specification, unless otherwise specified, a fine line means a line having a width of 5 μm or less, and illustratively means a line having a width of 1 to 4 μm or less.

[0041] In this specification, unless otherwise specified, it is understood that the physical properties of each component in the packaging substrate are measured at room temperature, which is 20°C to 25°C.

[0042] In order to achieve high integration of the packaging substrate and optimize the signal transmission path, through vias can be formed in the glass core. However, due to the high hardness of the glass material, the glass core having such a complex structure can be easily damaged by various impacts during the manufacturing process.

[0043] Specifically, in the process of forming the redistribution layer on the glass core, the glass core may be repeatedly exposed to high and low temperature environments, which may cause the internal stress of the glass core to increase. Also, the substrate having the glass core as a component may easily crack even with a small mechanical shock during transportation and operation.

[0044] The inventors of the embodiment experimentally confirmed that by applying a crack prevention layer to the packaging substrate, it is possible to provide stable durability against thermal shock and mechanical shock and prevent cracks from spreading widely throughout the glass core, and thus completed the embodiment.

[0045] Hereinafter, the embodiment will be described in detail.

[0046] Fig. 1A is a cross-sectional view illustrating a packaging substrate according to an embodiment of the present invention. Fig. 1B is a plan view illustrating a packaging substrate according to an embodiment of the present invention. Fig. 2 is an enlarged view of A in Fig. 1A. An embodiment will be described with reference to Figs. 1A, 1B, and 2.

[0047] Glass Core The packaging substrate 100 according to the embodiment may include a glass core 10 .

[0048] The glass core 10 may have the shape of a glass substrate. The glass core 10 may be, for example, an alkali borosilicate plate glass, an alkali-free borosilicate plate glass, an alkali-free alkaline earth borosilicate plate glass, or the like, and may be any plate glass used as an electronic component. The glass core 10 may be a glass substrate for electronic devices, and may be, for example, a glass substrate manufactured by Schott, AGC, Corning, or the like, but is not limited thereto.

[0049] The thickness of the glass core 10 may be 50 μm or more. The thickness may be 100 μm or more. The thickness may be 250 μm or more. The thickness may be 400 μm or more. The thickness may be 500 μm or more. The thickness may be 3000 μm or less. The thickness may be 2000 μm or less. The thickness may be 1000 μm or less. When a glass core 10 having such a thickness is used, a semiconductor element can be stably fixed and protected.

[0050] The glass core 10 may include a through via 101 that penetrates the glass core 10 in a thickness direction.

[0051] The through via 101 is composed of an internal space 102 and a via inner diameter surface 103 surrounding the internal space 102. The internal space 102 means an empty space, and the via inner diameter surface 103 means a surface of the glass core 10 formed inside the through via 101.

[0052] The through vias 101 may have a diameter that varies across the thickness of the glass core 10. The through vias 101 may have a substantially uniform diameter across the thickness of the glass core 10.

[0053] The cross section of the through via 101 may be an hourglass shape. The cross section of the through via 101 may be a rectangular shape, a triangular shape, a trapezoidal shape, etc., other than the hourglass shape. The cross section of the through via 101 refers to a cross section in the thickness direction of the glass core 10.

[0054] The through via 101 can include a first opening 104 that interfaces with the top surface of the glass core 10 and a second opening 105 that interfaces with the bottom surface of the glass core 10 .

[0055] The through via 101 may further include a minimum inner diameter portion 106 that connects the first opening 104 and the second opening 105 and is a portion having the smallest inner diameter. The diameter of the through via 101 at the minimum inner diameter portion 106 may be smaller than the diameter of the through via 101 at the first opening 104. The diameter of the through via 101 at the minimum inner diameter portion 106 may be smaller than the diameter of the through via 101 at the second opening 105.

[0056] When the through via 101 includes the minimum inner diameter portion 106, the cross section of the through via 101 may have an hourglass shape. In the case of the through via 101 having an hourglass-shaped cross section, it may be easier to form a thin film on the via inner diameter surface 103 through coating or sputtering. Thus, when forming an electrical conductive layer and / or a crack prevention layer 20 inside the through via 101, the reliability of the packaging substrate 100 may be further improved.

[0057] The diameter of the through via 101 at the first opening 104 may be 40 μm to 200 μm. The diameter may be 60 μm or more. The diameter may be 80 μm or more. The diameter may be 100 μm or more. The diameter may be 180 μm or less. The diameter may be 160 μm or less. The diameter may be 140 μm or less. The diameter may be 120 μm or less.

[0058] The diameter of the through via 101 at the second opening 105 may be 40 μm to 200 μm. The diameter may be 60 μm or more. The diameter may be 80 μm or more. The diameter may be 100 μm or more. The diameter may be 180 μm or less. The diameter may be 160 μm or less. The diameter may be 140 μm or less. The diameter may be 120 μm or less.

[0059] In this case, the degree of integration of the packaging substrate 100 can be further increased, and the electrical reliability of the packaging substrate 100 can be stably controlled.

[0060] The diameter of the through via 101 at the minimum inner diameter portion 106 may be 50% to 99% of the smaller of the diameter of the through via 101 at the first inner diameter portion and the diameter of the through via 101 at the second inner diameter portion. The diameter of the through via 101 at the minimum inner diameter portion 106 may be 60% or more of the smaller of the diameter of the through via 101 at the first inner diameter portion and the diameter of the through via 101 at the second inner diameter portion. The diameter of the through via 101 at the minimum inner diameter portion 106 may be 70% or more of the smaller of the diameter of the through via 101 at the first inner diameter portion and the diameter of the through via 101 at the second inner diameter portion. The diameter of the through via 101 at the minimum inner diameter portion 106 may be 90% or less of the smaller of the diameter of the through via 101 at the first inner diameter portion and the diameter of the through via 101 at the second inner diameter portion. The diameter of the through via 101 at the minimum inner diameter portion 106 may be 80% or less of the smaller of the diameter of the through via 101 at the first inner diameter portion and the diameter of the through via 101 at the second inner diameter portion. In such a case, it may be helpful to enable the crack prevention layer 20 and / or the electrical conductive layer to be formed with a uniform thickness over the entire via inner diameter surface 103.

[0061] The surfaces of the glass core 10 may include an upper surface and a side surface connected to the upper surface and formed in the thickness direction of the glass core 10. The surfaces of the glass core 10 may include a lower surface opposite to the upper surface.

[0062] The side surface being formed in the thickness direction of the glass core 10 is interpreted to mean not only that the side surface is perpendicular to the top surface of the glass core 10, but also that at least a portion of the side surface forms an angle (inclination angle) other than 90° with the top surface.

[0063] The side surface may be flat or curved.

[0064] The glass core 10 may include a cavity, which is a space formed by being recessed inside.

[0065] The cavity may be formed by recessing a portion of the upper / lower surface side of the glass core 10 in the thickness direction of the glass core 10, or may penetrate the glass core 10 in the thickness direction.

[0066] An element may be mounted in the cavity, and the element may be electrically connected to the packaging substrate 100. The element may be a semiconductor element such as a CPU, a GPU, or a memory chip, or may be a capacitor element, a transistor element, an impedance element, or other modules. In other words, any semiconductor element that is mounted in a semiconductor device may be applied as the element without any restrictions.

[0067] Crack prevention layer structure The glass core 10 may have a surface. The packaging substrate 100 may include a crack prevention layer 20 surrounding at least a portion of the surface of the glass core 10.

[0068] The crack prevention layer 20 stably supports the glass core 10 in a high temperature environment, thereby preventing the glass core 10 from being warped and damaged due to internal stress of the glass core 10, and effectively suppressing cracks that have already occurred in the glass core 10 from propagating to a wider area. In addition, the crack prevention layer 20 imparts a controlled elasticity to a preset region of the packaging substrate 100, thereby stably protecting the packaging substrate 100 from mechanical shocks that occur in the process of handling the packaging substrate 100 by an operator.

[0069] In the embodiment, the ratio of the thickness of the glass core 10 to the thickness of the crack prevention layer 20 can be adjusted within a preset range. In this case, the glass core 10 can be more firmly supported and protected, and the durability of the packaging substrate 100 against external impact can be improved. At the same time, the heat treatment time required in the process of forming the crack prevention layer 20 through heat treatment can be adjusted, and excessive thermal deformation of the glass core 10 can be suppressed.

[0070] The thickness of the crack prevention layer 20 is defined as the thickness of the crack prevention layer 20 located on the upper surface, side surface, or lower surface of the glass core 10. That is, the thickness of the crack prevention layer 20 that is not formed in the through via 101 is defined as the thickness of the crack prevention layer 20. If the thickness of the crack prevention layer 20 is not uniform depending on the position, the average thickness of the crack prevention layer 20 is defined as the thickness of the crack prevention layer 20 according to the embodiment.

[0071] The ratio of the thickness of the crack prevention layer 20 to the thickness of the glass core 10 may be 0.0001 to 0.05. The ratio may be 0.0005 or more. The ratio may be 0.001 or more. The ratio may be 0.003 or more. The ratio may be 0.005 or more. The ratio may be 0.03 or less. The ratio may be 0.02 or less. In such a case, a packaging substrate 100 with improved durability can be provided without excessive damage to the glass core 10.

[0072] The thickness of the crack prevention layer 20 may be 100 nm to 50 μm. The thickness may be 500 nm or more. The thickness may be 1 μm or more. The thickness may be 3 μm or more. The thickness may be 5 μm or more. The thickness may be 40 μm or less. The thickness may be 30 μm or less. The thickness may be 20 μm or less. In such a case, the crack prevention layer 20 can firmly support the glass core 10 and effectively prevent the formation and propagation of cracks in the glass core 10. Also, the crack prevention layer 20 can be formed within a controlled curing time.

[0073] A crack prevention layer 20 may surround the sides of the glass core 10 .

[0074] An external force applied to the packaging substrate 100 during handling by an operator may act mainly in the lateral direction of the glass core 10. The crack prevention layer 20 formed in the above-described structure can more effectively protect the glass core 10 from mechanical shock.

[0075] The crack prevention layer 20 surrounding the side surface of the glass core 10 can surround not only the side surface of the glass core 10 but also at least a portion of the upper surface and / or lower surface of the glass core 10. In this case, the crack prevention layer 20 can cover the edge portion of the upper surface and / or lower surface.

[0076] The phrase "the crack prevention layer 20 surrounds the glass core 10" is interpreted to mean not only that the crack prevention layer 20 is in contact with and surrounds the glass core 10, but also that the crack prevention layer 20 surrounds the sides of the glass core 10 with other components disposed between the crack prevention layer 20 and the glass core 10.

[0077] 3 is a cross-sectional view illustrating a packaging substrate according to another embodiment of the present invention, and an embodiment of the present invention will now be described with reference to FIG.

[0078] The packaging substrate includes a glass core. The specific configuration of the packaging substrate is the same as that described in Figures 1A, 1B, and 2. The following description will focus on differences.

[0079] The crack prevention layer 20 may be disposed between the internal space 102 and the via inner diameter surface 103. Since the through via 101 has a fine and complex structure, the periphery of the through via 101 may correspond to a part in the glass core 10 that is particularly vulnerable to impact. When the crack prevention layer 20 has such a structure, the formation and propagation of cracks in the glass core 10 can be more effectively prevented.

[0080] When the crack prevention layer 20 has the above-mentioned structure, the embodiment may adjust the minimum diameter of the internal space 102 within a preset range. In this case, since an electrical conductive layer can be relatively easily formed without voids in the through via 101, the electrical reliability of the packaging substrate 100 can be increased to a certain level or more.

[0081] The minimum value of the diameter of the internal space 102 may be 50 μm or more. The minimum value may be 65 μm or more. The minimum value may be 80 μm or more. The minimum value may be 200 μm or less. The minimum value may be 180 μm or less. The minimum value may be 120 μm or less. In such cases, an electrically conductive layer can be easily formed in the through via 101.

[0082] The crack prevention layer 20 may have a structure surrounding the entire surface of the glass core 10. That is, the crack prevention layer 20 may be disposed not only on the through via 101 side but also on the upper, lower and side surfaces of the glass core 10. This may help protect the glass core 10 from external impacts and prevent cracks from spreading throughout the glass core 10.

[0083] Crack prevention layer properties In the embodiment, the tensile strength of the crack prevention layer 20 can be controlled. Such a crack prevention layer 20 has a controlled strength and can stably fix the glass core 10 that may be deformed due to thermal stress. This can prevent defects caused by warping of the glass core 10 during the manufacturing process, especially during the process of forming the redistribution layer. In addition, the crack prevention layer 20 can provide appropriate elasticity to at least a portion of the packaging substrate 100 and can absorb impacts applied to the glass core 10 from the outside.

[0084] The tensile strength of the crack prevention layer 20 can be measured using a Universal Testing Machine (UTM).

[0085] The tensile strength of the crack prevention layer 20 may be 1 MPa to 20 MPa. The tensile strength may be 2 MPa or more. The tensile strength may be 4 MPa or more. The tensile strength may be 15 MPa or less. The tensile strength may be 10 MPa or less. In such cases, even if the glass core 10 has a structure that is vulnerable to impact, the packaging substrate 100 can have stable durability.

[0086] The crack prevention layer 20 may have a linear thermal expansion coefficient within a preset range in accordance with an embodiment. The crack prevention layer 20 having such characteristics can prevent the glass core 10 from being damaged by controlling the external force applied to the glass core 10 due to the thermal expansion of the crack prevention layer 20 itself during the process of forming the redistribution layer. In addition, when an electrical conductive layer is disposed in contact with the crack prevention layer 20, it is possible to prevent the electrical connection from being damaged due to the expansion of the crack prevention layer 20.

[0087] The linear thermal expansion coefficient is a value measured using Dynamic Mechanical Analysis (DMA).

[0088] The crack prevention layer 20 has a linear thermal expansion coefficient of 100 ppm / °C to 800 ppm / °C. The linear thermal expansion coefficient may be 150 ppm / °C or more. The linear thermal expansion coefficient may be 200 ppm / °C or more. The linear thermal expansion coefficient may be 250 ppm / °C or more. The linear thermal expansion coefficient may be 300 ppm / °C or more. The linear thermal expansion coefficient may be 700 ppm / °C or less. The linear thermal expansion coefficient may be 600 ppm / °C or less. The linear thermal expansion coefficient may be 500 ppm / °C or less. The linear thermal expansion coefficient may be 400 ppm / °C or less. In this case, the packaging substrate 100 can have stable durability and electrical reliability even when subjected to repeated heat treatments.

[0089] In the embodiment, the dielectric properties of the crack prevention layer 20 may be controlled. When an electrically conductive layer is formed on the crack prevention layer 20, the crack prevention layer 20 may function as an insulator. When a high-density fine pattern is implemented on the crack prevention layer 20 having the controlled dielectric properties, crosstalk between signals between wirings may be suppressed, and power consumption of the packaging substrate 100 caused by the dielectric properties of the crack prevention layer 20 may be reduced.

[0090] The dielectric constant of the crack prevention layer 20 is measured at room temperature by a dielectric constant measuring device.

[0091] The dielectric constant of the crack prevention layer 20 at a frequency of 100 Hz may be 4 or less. The dielectric constant may be 3.5 or less. The dielectric constant may be 3 or less. The dielectric constant may be 2.8 or less. The dielectric constant may be 1.5 or more.

[0092] The dielectric constant of the crack prevention layer 20 at a frequency of 100 kHz may be 4 or less. The dielectric constant may be 3.5 or less. The dielectric constant may be 3 or less. The dielectric constant may be 2.8 or less. The dielectric constant may be 1.5 or more.

[0093] In this case, the electrically conductive layer pattern formed on the crack prevention layer 20 can transmit signals efficiently.

[0094] The packaging substrate 100 may include a first electrically conductive layer (not shown) disposed on the crack prevention layer 20. The peel strength of the first electrically conductive layer to the crack prevention layer 20 may be 300 gf or more.

[0095] The electrically conductive layer is a conductor that transmits an electrical signal. The electrically conductive layer may include a first electrically conductive layer. The first electrically conductive layer is the electrically conductive layer that is disposed closest to the crack prevention layer 20. At least a portion of the first electrically conductive layer may be formed in contact with the crack prevention layer 20. The electrically conductive layer may include an electrically conductive material. Exemplarily, the electrically conductive layer may include at least one of copper, nickel, aluminum, gold, and silver. The material of the electrically conductive layer may be copper, etc.

[0096] When the first electrically conductive layer is formed on the crack prevention layer 20, the crack prevention layer 20 may function as a support and an insulator for the first electrically conductive layer. In the embodiment, the adhesive strength between the crack prevention layer 20 and the first electrically conductive layer may be improved so that the crack prevention layer 20 stably fixes the first electrically conductive layer.

[0097] The peel strength of the first electrically conductive layer with respect to the crack prevention layer 20 is measured by a 180° peel test using a bond tester. The measurement speed (peel speed) is 10 mm / s, the measurement distance (peel distance) is 70 mm, and the measurement area is set to an area of ​​the upper / lower surface of the glass core where no through vias are formed. Exemplarily, the peel strength value can be measured using a Condor Sigma bond tester manufactured by XYZ TEC.

[0098] The average value of the measured peel strength values ​​is taken as the peel strength of the first electrically conductive layer from the crack prevention layer 20.

[0099] The peel strength of the first electrically conductive layer relative to the crack prevention layer 20 may be 300 gf or more. The peel strength may be 350 gf or more. The peel strength may be 400 gf or more. The peel strength may be 450 gf or more. The peel strength may be 500 gf or more. The peel strength may be 1200 gf or less. In such a case, the crack prevention layer 20 may stably support and fix the first electrically conductive layer, which may be useful for forming an elaborate fine pattern on the upper surface of the glass core 10, etc.

[0100] In an embodiment, an adhesion enhancing layer (not shown) may be disposed between the crack prevention layer 20 and the first conductive layer (or the conductive layer) to further increase the adhesive strength between the crack prevention layer 20 and the first conductive layer.

[0101] The adhesion-strengthening layer can further improve the adhesive strength between the organic crack prevention layer 20 and the first electrically conductive layer (or the electrically conductive layer), thereby enabling the electrical reliability of the first electrically conductive layer (or the electrically conductive layer) to be more stably maintained.

[0102] The adhesion enhancing layer may be any one selected from the group consisting of azole compounds, silane compounds, silanized azole compounds, and combinations thereof. The adhesion enhancing layer having such a composition does not excessively etch the electrical conductive layer, and can effectively improve the adhesive strength of the electrical conductive layer.

[0103] In order to further improve the peel strength of the first electrically conductive layer relative to the crack prevention layer 20, the crack prevention layer 20 can be subjected to a surface roughening treatment. By increasing the surface roughness of the crack prevention layer 20, the contact area between the crack prevention layer 20 and the first electrically conductive layer is expanded, and an anchor effect appears at the interface between the crack prevention layer 20 and the first electrically conductive layer, thereby further increasing the peel strength.

[0104] At least a portion of the crack prevention layer 20 may be disposed in contact with the surface of the glass core 10. The peel strength of the crack prevention layer 20 with respect to the surface of the glass core 10 may be 400 gf or more.

[0105] At the portion where the crack prevention layer 20 and the glass core 10 contact each other, the bonding strength between the crack prevention layer 20 and the glass core 10 can be controlled within the range of the embodiment. Thus, the crack prevention layer 20 can be prevented from easily separating from the glass core 10, and can stably support and protect the glass core 10. In addition, the electrical connection between the electrically conductive layer pattern formed on the crack prevention layer 20 and the electrically conductive layer pattern formed in another region in the packaging substrate 100 can be prevented from being easily broken.

[0106] The peel strength of the crack prevention layer 20 from the surface of the glass core 10 is measured under the same conditions as the method for measuring the peel strength of the first electrically conductive layer from the crack prevention layer 20.

[0107] The peel strength of the crack prevention layer 20 from the surface of the glass core 10 may be 400 gf or more. The peel strength may be 450 gf or more. The peel strength may be 500 gf or more. The peel strength may be 550 gf or more. The peel strength may be 600 gf or more. The peel strength may be 1200 gf or less. In such cases, the crack prevention layer 20 does not easily peel off from the surface of the glass core 10, which may help to stably maintain the durability and electrical reliability of the packaging substrate 100.

[0108] Composition of the crack prevention layer The crack prevention layer 20 may include a silicone elastomer.

[0109] The silicone elastomer can provide the crack prevention layer 20 with the desired mechanical properties in the embodiment, and can stably fix the glass core 10 in a high-temperature atmosphere and working environment. In addition, the silicone elastomer can be cured through heat treatment within a relatively short time after light treatment. This can increase the crosslink density of the crack prevention layer 20 to strengthen its rigidity, and can control the time that the glass core 10 is exposed to high temperatures during the formation of the crack prevention layer 20, thereby suppressing deformation of the glass core 10 due to thermal stress.

[0110] The crack prevention layer 20 may contain 70% or more by weight of a silicone elastomer. The crack prevention layer 20 may contain 80% or more by weight of a silicone elastomer. The crack prevention layer 20 may contain 90% or more by weight of a silicone elastomer. The crack prevention layer 20 may contain 100% or less by weight of a silicone elastomer. The crack prevention layer 20 may be a silicone elastomer. In such a case, improved rigidity is imparted to the crack prevention layer 20, the glass core 10 can be stably fixed, and the degree of warping of the glass core 10 during the manufacturing process of the substrate can be reduced to a certain level or less.

[0111] The silicone elastomer may be one in which a base material, which is a silicone resin, and a curing agent are crosslinked.

[0112] The base agent may include an alkene group at one or more ends. The base agent may have the structure of Formula 1 below.

[0113] [ka]

[0114] In the above Chemical Formula 1, n is an integer of 20-60.

[0115] The curing agent may have the structure of Formula 2 below.

[0116] [ka]

[0117] In the above Chemical Formula 2, x and y are each independently an integer of 2 to 10.

[0118] During the curing process, the alkene group contained in the base resin can form a cross-link with the curing agent, thereby improving the cross-link density in the blended resin and imparting a controlled hardness to the crack prevention layer 20.

[0119] When forming the crack prevention layer 20, 3 parts by weight to 20 parts by weight of the curing agent may be applied based on 100 parts by weight of the base material. When forming the crack prevention layer 20, 5 parts by weight or more of the curing agent may be applied based on 100 parts by weight of the base material. When forming the crack prevention layer 20, 8 parts by weight or more of the curing agent may be applied based on 100 parts by weight of the base material. When forming the crack prevention layer 20, 15 parts by weight or less of the curing agent may be applied based on 100 parts by weight of the base material. In this case, it may be useful to impart the crack prevention layer 20 with the stiffness and elasticity desired in the embodiment.

[0120] The crack prevention layer 20 may further include a metal catalyst. The metal catalyst may help the crosslinking of the silicone elastomer to proceed within a short period of time. The metal catalyst may be, for example, a platinum catalyst.

[0121] The crack prevention layer 20 may further contain additives other than the blended resin. The additives are not limited as long as they are commonly used in the film field.

[0122] Other packaging substrate components 4 is a conceptual diagram illustrating a packaging substrate according to still another embodiment of the present invention, which will now be described with reference to FIG.

[0123] The packaging substrate includes a glass core. The specific configuration of the packaging substrate is the same as that described in Figures 1A, 1B, 2, and 3. The following description will focus on differences.

[0124] The redistribution layer 30 may include an insulating layer 32 and an electrically conductive layer 31 disposed within the insulating layer 32 .

[0125] The packaging substrate 100 may include a redistribution layer 30 disposed above the glass core 10. The packaging substrate 100 may include a redistribution layer 30 disposed below the glass core 10. The packaging substrate 100 may include a redistribution layer 30 disposed above and below the glass core 10.

[0126] The redistribution layer 30 may be disposed in the through via 101. The electrically conductive layer 31 may be disposed in the through via 101. When only the electrically conductive layer 31 is present in the through via 101, the electrically conductive layer 31 may be formed by filling the internal space 102 of the through via 101. When both the electrically conductive layer 31 and the insulating layer 32 are present in the through via 101, the electrically conductive layer 31 may be disposed adjacent to the via inner diameter surface 103, and the insulating layer 32 may be disposed in the region surrounded by the electrically conductive layer 31.

[0127] The redistribution layer 30 may be disposed in contact with the surface of the glass core 10. Other components may be disposed between the redistribution layer 30 and the surface of the glass core 10. A crack prevention layer 20 may be disposed between the redistribution layer 30 and the surface of the glass core 10.

[0128] In the redistribution layer 30, an insulating layer 32 and an electrically conductive layer 31 may be arranged in a mixed manner. The redistribution layer 30 may be formed in a form in which an electrically conductive layer 31 having a predetermined position and shape is embedded in the insulating layer 32. The electrically conductive layer 31 may be formed as a thin line in at least a part of the redistribution layer 30. The redistribution layer 30 may be electrically connected to upper and / or lower terminals, elements, etc. of the packaging substrate 100.

[0129] The redistribution layer 30 may be formed by a process of repeatedly forming and removing an insulating layer 32 and an electrically conductive layer 31 .

[0130] The insulating layer 32 may be formed, for example, using a build-up layer material such as Ajinomoto Build-up Film (ABF) manufactured by Ajinomoto Co., Ltd., an undercoat material, or the like, but is not limited thereto.

[0131] The material of the electrically conductive layer 31 will not be described here since it overlaps with the above description.

[0132] The packaging substrate 100 may further include a redistribution layer 30 and / or bumps (not shown) disposed below the glass core 10 .

[0133] The bumps may be arranged in a predetermined pattern under the glass core 10. Exemplarily, the bumps may be arranged on a portion of the lower surface of the packaging substrate 100 so as to contact a main board or the like.

[0134] Semiconductor Package A semiconductor package according to yet another embodiment includes a packaging substrate and a device electrically connected to the packaging substrate.

[0135] The packaging substrate may be mounted on and electrically connected to the main board.

[0136] The description of the packaging substrate and the elements will be omitted since it is the same as that described above.

[0137] Manufacturing method of packaging substrate A method for manufacturing a packaging substrate according to yet another embodiment of the present invention includes a through-via forming step of forming a through-via penetrating through a glass substrate in a thickness direction of the glass substrate to provide a glass core, and a crack prevention layer fabricating step of forming a crack prevention layer surrounding at least a portion of a surface of the glass core to manufacture a packaging substrate.

[0138] In the through via forming step, the glass substrate may be, for example, an alkali borosilicate plate glass, an alkali-free borosilicate plate glass, an alkali-free alkaline earth borosilicate plate glass, etc., and may be any plate glass used as an electronic component. The glass core may be a glass substrate for electronic devices, and may be, for example, a glass substrate manufactured by Schott, AGC, Corning, etc., but is not limited thereto.

[0139] In the through via forming step, the glass substrate may be etched to provide a glass core. Specifically, a defect may be formed at a predetermined position in the surface of the glass substrate. Methods for forming the defect may include mechanical etching, laser irradiation, and the like.

[0140] After the defect is formed, a through via may be formed by physical or chemical etching. When chemical etching is applied, wet etching may be performed using an etching solution. The etching solution is not limited as long as it is generally applicable to etching a glass substrate. For example, the etching solution may be a sulfuric acid solution, a nitric acid solution, a hydrofluoric acid solution, or the like.

[0141] During the etching process, the surface of the glass substrate except for the area where the defects are formed may be masked, or etching may be performed without masking.

[0142] A defect can be formed at one point in the top surface of the glass substrate, a defect can be formed at another point in the bottom surface of the glass substrate opposite the one point, and etching can be performed to form a through via having an hourglass-shaped cross section.

[0143] The opening on the upper surface side of the formed through via is called the first opening, the opening on the lower surface side is called the second opening, and the part of the through via having the smallest diameter is called the minimum inner diameter part.

[0144] The explanation of the first opening, the second opening, and the minimum inner diameter portion will be omitted since it overlaps with the above content.

[0145] In the step of forming the crack prevention layer, the crack prevention layer may be formed at a predetermined position of the glass core. The description of the position where the crack prevention layer is disposed is omitted since it is the same as the above description.

[0146] The crack prevention layer can be formed by a lamination or wet coating method.

[0147] In a lamination process, a film-like crack prevention layer can be laminated at a predetermined position on the glass core to produce a packaging substrate.

[0148] In the wet coating method, a composition for preparing a crack prevention layer can be applied to a predetermined position of the glass core, and the applied composition for preparing a crack prevention layer can be cured to form the crack prevention layer.

[0149] The composition for manufacturing the crack prevention layer may include a silicone elastomer base agent and a curing agent. The description of the composition of the silicone elastomer base agent and the curing agent is omitted since it is the same as the above description.

[0150] The composition for manufacturing the crack prevention layer may contain 3 to 20 parts by weight of a curing agent based on 100 parts by weight of the base. The composition for manufacturing the crack prevention layer may contain 5 parts by weight or more of a curing agent based on 100 parts by weight of the base. The composition for manufacturing the crack prevention layer may contain 8 parts by weight or more of a curing agent based on 100 parts by weight of the base. The composition for manufacturing the crack prevention layer may contain 15 parts by weight or less of a curing agent based on 100 parts by weight of the base. In this case, it may be useful to impart the mechanical properties desired in the embodiment to the crack prevention layer.

[0151] The composition for manufacturing the crack prevention layer may be coated by a method such as spin coating, slit coating, etc., but is not limited thereto.

[0152] The applied composition for producing the crack prevention layer can be thermally cured to form the crack prevention layer.

[0153] The composition for manufacturing the crack prevention layer may be cured at a relatively low heat treatment temperature. The relatively low heat treatment temperature may be 70°C to 120°C. The temperature may be 80°C or higher. The temperature may be 90°C or higher. The temperature may be 110°C or lower.

[0154] When the composition for manufacturing a crack prevention layer is cured at a relatively low heat treatment temperature, the heat treatment may be performed for a relatively long time. In this case, the heat treatment time of the composition for manufacturing a crack prevention layer may be 30 to 90 minutes. The heat treatment time may be 40 minutes or more. The heat treatment time may be 50 minutes or more. The heat treatment time may be 80 minutes or less.

[0155] In this case, it is possible to suppress the generation of excessive thermal stress in the glass core during the process of forming the crack prevention layer.

[0156] The composition for manufacturing the crack prevention layer may be cured at a relatively high heat treatment temperature. The relatively low heat treatment temperature may be 120°C to 180°C. The temperature may be 130°C or higher. The temperature may be 140°C or higher. The temperature may be 170°C or lower.

[0157] When the composition for manufacturing a crack prevention layer is cured at a relatively high heat treatment temperature, the heat treatment may be performed for a relatively short time. In this case, the heat treatment time of the composition for manufacturing a crack prevention layer may be 5 minutes to 30 minutes. The heat treatment time may be 10 minutes or more. The heat treatment time may be 15 minutes or more. The heat treatment time may be 25 minutes or less.

[0158] In such a case, the time during which the glass core is exposed to high temperatures can be shortened, thereby suppressing thermal deformation of the glass core.

[0159] The explanation of the thickness of the formed crack prevention layer will be omitted since it overlaps with the above content.

[0160] In order to improve the adhesion of the electrical conductive layer to the crack prevention layer, the surface of the crack prevention layer can be roughened. In the process of forming the crack prevention layer, the adhesion of the electrical conductive layer to the crack prevention layer can be adjusted by adjusting the heat treatment time and heat treatment temperature.

[0161] Another method for improving the adhesion of the electrical conductive layer to the crack prevention layer is to form an adhesion enhancing layer on the surface of the crack prevention layer. The description of the adhesion enhancing layer is omitted here since it is the same as that described above.

[0162] A redistribution layer may be formed on the packaging substrate on which the crack prevention layer is formed. After forming an electrical conductive layer on the glass core or the crack prevention layer, an insulating layer may be formed to surround the electrical conductive layer to form the redistribution layer.

[0163] The electrically conductive layer may be formed by a dry process or a wet process.

[0164] The dry method is a method in which a seed layer is formed by sputtering in an area where an electrically conductive layer is to be disposed, and then plating is performed on the area where the seed layer is formed to form an electrically conductive layer. When forming the seed layer, metals such as titanium, chromium, nickel, etc. may be sputtered, or the above metals and copper may be sputtered together. Through sputtering, an anchor effect occurs in which the surface of the glass core, crack prevention layer, or insulating layer interacts with metal particles, improving the adhesion of the electrically conductive layer.

[0165] The wet method is a method in which a primer is applied to a portion where an electrically conductive layer needs to be formed, and then metal plating is performed. The primer may include a compound having a functional group such as an amine. Depending on the intended level of adhesion, the primer may include both a compound having a functional group such as an amine and a silane coupling agent. When applying a silane coupling agent, the surface to be primer-treated may be pretreated with the silane coupling agent, and then a compound having an amine group may be applied to the pretreated area to form a primer layer.

[0166] After forming the seed layer or primer layer, the electrically conductive layer can be formed by plating with a metal. Copper plating may be applied when forming the electrically conductive layer, but is not limited thereto. Before metal plating, a portion of the seed layer or primer layer that does not require the formation of an electrically conductive layer can be inactivated, or a portion that requires the formation of an electrically conductive layer can be activated, and then plating can be performed. The activation or inactivation treatment method may be a light irradiation treatment in which a laser of a specific wavelength is irradiated, a chemical treatment, or the like. However, after metal plating is performed without applying the activation or inactivation treatment, the electrically conductive layer can be etched and patterned according to a pre-designed shape.

[0167] After the formation of the electrically conductive layer, an insulating layer surrounding the electrically conductive layer can be formed. The insulating layer can be a film-shaped one. Specifically, the insulating layer can be formed by vacuum laminating a film-shaped insulating layer. In this case, the insulating layer is formed to surround the electrically conductive layer without voids, and the packaging substrate can have excellent electrical reliability.

[0168] The description of the position where the redistribution layer is disposed is omitted since it overlaps with the above description.

[0169] If necessary, a process of forming connection terminals, bumps, a cover layer, etc. on the upper and / or lower surface of the packaging substrate, or a process of mounting an element on the substrate may be further performed.

[0170] Hereinafter, the embodiments will be described in more detail with reference to specific examples. The following examples are merely illustrative to aid in understanding the embodiments, and are not intended to limit the scope of the embodiments.

[0171] Manufacturing example: Packaging board manufacturing Example 1: A defect was formed on the surface of a Corning SG7.8 glass plate (thickness 0.7 mm) by irradiating a laser, and then wet etching was performed to form a plurality of through vias to manufacture a glass core. The diameter of the core via was adjusted to 100 μm.

[0172] A Sylgard 184 composition from Dow, which is a composition for manufacturing a crack prevention layer, was applied to the upper surface of the glass core. The base agent and hardener of Sylgard 184 were mixed at 10:1 (by weight) and then applied to a glass plate. The applied composition was heat-treated and hardened at 100°C for 60 minutes to form a crack prevention layer with a thickness of 8 μm. A nickel target was applied to the crack prevention layer and sputtered to form a nickel layer, and a copper target was applied to the nickel layer and sputtered to form a copper layer, completing a seed layer. Copper plating was applied to the seed layer to form a first electrically conductive layer with a total thickness of 1 μm, and a packaging substrate was manufactured.

[0173] Example 2: A packaging substrate was manufactured under the same conditions as in Manufacturing Example 1, except that the thickness of the crack prevention layer was 7 μm.

[0174] Example 3: A packaging substrate was produced under the same conditions as in Production Example 1, except that the thickness of the crack prevention layer was 10 μm.

[0175] Example 4: A packaging substrate was produced under the same conditions as in Production Example 1, except that the thickness of the crack prevention layer was 11 μm.

[0176] Comparative Example 1: A packaging substrate was produced under the same conditions as in Example 1, except that Scotchgard Film Protector FX-1000 from 3M was used as the composition for producing the crack prevention layer, and the crack prevention layer was formed without heat treatment.

[0177] Evaluation example: Measurement of peel strength of an electrically conductive layer against a crack prevention layer For the packaging substrates of each embodiment, the peel strength of the first electrically conductive layer against the crack prevention layer was measured by a 180° peel test using a Condor Sigma bond tester from XYZ TEC. The measurement speed (peel speed) was 10 mm / s, the measurement distance (peel distance) was 70 mm, and the measurement area was set to an area where no through vias were formed. The average value of the peel strength measured during the peeling process of the crack prevention layer for each manufacturing example was taken as the peel strength for each manufacturing example.

[0178] The measured values ​​for each example are shown in Table 1 below.

[0179] Evaluation example: Heat resistance evaluation The packaging substrates of the Examples and Manufacturing Examples were exposed to 100° C. for 10 minutes. Thereafter, the packaging substrates of the Examples and Manufacturing Examples were visually observed, and if warpage of the packaging substrate or deformation of the crack prevention layer occurred, it was evaluated as Fail, and if no warpage of the packaging substrate or deformation of the crack prevention layer occurred, it was evaluated as Pass.

[0180] The evaluation results for each of the examples and comparative examples are shown in Table 1 below.

[0181] Evaluation example: Evaluation of various physical properties of anti-crack layer The tensile strength of the crack prevention layer in the packaging substrate of Example 1 was measured at room temperature using a universal testing machine (UTM).

[0182] The linear thermal expansion coefficient of the crack prevention layer was measured by dynamic mechanical analysis (DMA).

[0183] The dielectric constant of the crack prevention layer at a frequency of 100 Hz and the dielectric constant at a frequency of 100 kHz were measured using a dielectric constant meter.

[0184] The measured values ​​for Example 1 are shown in Table 2 below.

[0185] [Table 1]

[0186] [Table 2]

[0187] It can be seen from Table 1 that the average peel strength for each manufacturing example is 600 gf or more, which means that the adhesive strength of the electrical conductive layer to the crack prevention layer is excellent in all manufacturing examples.

[0188] In the evaluation of heat resistance, Examples 1 to 4 were all rated as Pass, whereas Comparative Example 1 was rated as Fail.

[0189] Although the preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention defined in the appended claims also fall within the scope of the present invention. [Explanation of symbols]

[0190] 100 Packaging Substrate 10 Glass Core 101 Through Via 102 Interior Space 103 Via inner diameter surface 104 First Opening 105 Second Opening 106 Minimum inner diameter 20 Crack prevention layer 30 Redistribution layer 31 Electrically Conductive Layer 32 Insulating layer

Claims

1. Contains a glass core The glass core includes a through via penetrating the glass core in a thickness direction, the glass core having a surface; a crack prevention layer surrounding at least a portion of the surface; A packaging substrate, wherein the ratio of the thickness of the crack prevention layer to the thickness of the glass core is 0.0001 to 0.

05.

2. The packaging substrate according to claim 1 , wherein the anti-crack layer has a tensile strength of 1 Mpa to 20 Mpa.

3. 2. The packaging substrate as claimed in claim 1, wherein the anti-crack layer has a linear thermal expansion coefficient of 100 ppm / °C to 800 ppm / °C.

4. The packaging substrate according to claim 1 , wherein the crack prevention layer has a dielectric constant of 4 or less at a frequency of 100 Hz.

5. a first electrically conductive layer disposed on the crack prevention layer; The packaging substrate of claim 1 , wherein a peel strength of the first electrically conductive layer to the crack prevention layer is 300 gf or more.

6. The packaging substrate of claim 5 , further comprising an adhesion enhancement layer disposed between the resilient layer and the first electrically conductive layer.

7. The packaging substrate according to claim 5 , wherein the crack prevention layer is subjected to a surface roughening treatment.

8. At least a portion of the crack prevention layer is disposed in contact with a surface of the glass core, The packaging substrate according to claim 1 , wherein the peel strength of the crack prevention layer to the surface of the glass core is 400 gf or more.

9. The packaging substrate of claim 1 , wherein the anti-crack layer comprises a silicone elastomer.

10. the surface of the glass core includes an upper surface and a side surface connected to the upper surface and extending in a thickness direction of the glass core; The packaging substrate of claim 1 , wherein the crack prevention layer surrounds a side surface of the glass core.

11. The through via includes an internal space and a via inner diameter surface surrounding the internal space, the crack prevention layer is disposed between the internal space and the via inner diameter surface, The packaging substrate according to claim 1 , wherein the minimum diameter of the internal space is 50 μm or more.

12. A semiconductor package comprising: the packaging substrate according to claim 1; and a semiconductor element mounted on the packaging substrate.

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