Vapor growth device

Abstract

PURPOSE: To provide a vapor growth device capable of suppressing a departure from a holder of a substrate.CONSTITUTION: A vapor growth device of an embodiment, comprises: a reaction chamber; a rotator that is provided in the reaction chamber, and supports and rotates a substrate; and a rotational mechanism to be connected to the rotator. The rotator contains: a lower region having a bottom surface part; and an upper region having a cylindrical-shaped side surface part to be provided to the bottom surface part. A penetration hole penetrating an internal part and an external part of the rotator is provided to the upper region.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a vapor deposition apparatus that forms a film by supplying a gas to the surface of a substrate.

Background Art

[0002] As a method for forming a high-quality semiconductor film, there is an epitaxial growth technique for forming a single crystal film on the surface of a substrate by vapor deposition. In a vapor deposition apparatus using the epitaxial growth technique, a substrate is placed on a holder in a reaction chamber maintained at normal pressure or reduced pressure.

[0003] The holder is placed, for example, on a rotating body inside the reaction chamber. The substrate is rotated by rotating the rotating body. Further, while heating the substrate, a process gas containing a source gas that is a raw material for the film is supplied onto the substrate. On the upper surface of the substrate, an epitaxial single crystal film is formed by a thermal reaction of the process gas.

[0004] A pressure difference may occur between the inside and the outside of the rotating body. For example, when the pressure inside the rotating body becomes higher than the pressure outside the rotating body, the substrate may be detached from the rotating body due to the pressure difference. The substrate is detached from the rotating body alone or together with the holder.

[0005] When the substrate is detached from the rotating body, the growth of the epitaxial single crystal film cannot be continued. Further, for example, the substrate detached from the rotating body cracks in the reaction chamber, and the reaction chamber needs to be opened to the atmosphere and cleaned.

[0006] Patent Document 1 describes a semiconductor manufacturing apparatus in which a vent hole is provided in a holder provided on a rotating body in order to prevent the wafer and the holder from sticking.

Prior Art Documents

Patent Documents

[0007]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0008] The problem to be solved by the present invention is to provide a vapor deposition apparatus capable of suppressing the detachment of a substrate from a rotating body.

Means for Solving the Problems

[0009] A vapor deposition apparatus according to an aspect of the present invention includes a reaction chamber, a rotating body provided in the reaction chamber for supporting and rotating a substrate, and a rotation mechanism connected to the rotating body. The rotating body includes a lower region having a bottom surface portion and an upper region having a cylindrical side surface portion provided on the bottom surface portion. A through hole communicating the inside and outside of the rotating body is provided in the upper region.

[0010] In the vapor deposition apparatus according to the above aspect, the upper region of the rotating body preferably further has an annular upper surface portion provided on the side surface portion, and the through hole is provided in the upper surface portion.

[0011] In the vapor deposition apparatus according to the above aspect, it preferably further includes a cylindrical reflector provided around the rotating body and a gas supply unit for supplying gas between the rotating body and the reflector, and the through hole is preferably provided above the upper end of the reflector.

[0012] In the vapor deposition apparatus according to the above aspect, it preferably further includes a holder supported on the upper region, and the holder preferably includes an annular member and a disc-shaped member provided inside the annular member and placed on the annular member.

[0013] In the vapor deposition apparatus according to the above aspect, the annular member is preferably placed above the through hole and separated from the through hole.

Advantages of the Invention

[0014] According to the present invention, a vapor deposition apparatus capable of suppressing the detachment of a substrate from a holder can be realized.

Brief Description of the Drawings

[0015]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Figure 16

Figure 17

Figure 18

Figure 19

Figure 20

Figure 21

Figure 22

Figure 23

Figure 24

Figure 25

Figure 26

Embodiments for Carrying Out the Invention

[0016] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0017] In this specification, the same or similar members may be denoted by the same reference numerals.

[0018] In this specification, when the vapor deposition apparatus is installed so that film formation is possible, the direction of gravity is defined as "down", and the opposite direction is defined as "up". Therefore, "lower part" refers to the position in the direction of gravity with respect to the reference, and "downward" means the direction of gravity with respect to the reference. And "upper part" refers to the position in the direction opposite to the direction of gravity with respect to the reference, and "upward" means the direction opposite to the direction of gravity with respect to the reference. Also, the "vertical direction" is the direction of gravity.

[0019] Also, in this specification, the "process gas" is a general term for the gases used for film formation, and includes, for example, source gases, assist gases, dopant gases, carrier gases, and mixed gases thereof.

[0020] (First Embodiment) The vapor deposition apparatus according to the first embodiment includes a reaction chamber, a rotating body provided in the reaction chamber for supporting and rotating a substrate, and a rotation mechanism connected to the rotating body. The rotating body includes a lower region having a bottom surface portion and an upper region having a cylindrical side surface portion provided on the bottom surface portion. A through hole that communicates the inside and the outside of the rotating body is provided in the upper region.

[0021] FIG. 1 is a schematic cross-sectional view of the vapor deposition apparatus according to the first embodiment. The vapor deposition apparatus 100 according to the first embodiment is, for example, a single-wafer epitaxial growth apparatus for epitaxially growing a single-crystalline silicon carbide film on a single-crystalline silicon carbide substrate.

[0022] The vapor deposition apparatus 100 according to the first embodiment includes a reaction chamber 10 and a buffer chamber 13. Inside the reaction chamber 10, a susceptor 14 (holder), a rotating body 16, a rotation mechanism 18, a first heater 20, a first reflector 22, a support column 24, a fixing base 26, a fixing shaft 28, a second reflector 30 (reflector), a hood 32, and a second heater 34 are provided. The reaction chamber 10 also includes a gas discharge port 36 and a gas supply unit 38. The buffer chamber 13 includes a partition plate 40 and a gas inlet 42. The rotating body 16 includes a lower region 16a and an upper region 16b. The rotation mechanism 18 includes a rotation shaft 18a and a motor 18b.

[0023] FIG. 2 is an enlarged schematic cross-sectional view of a part of the vapor deposition apparatus according to the first embodiment. FIG. 2 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. FIG. 2 is a cross-section taken along line AA' in FIG. 4.

[0024] The reaction chamber 10 is made of, for example, stainless steel. The reaction chamber 10 has a cylindrical wall. Inside the reaction chamber 10, a silicon carbide film is formed on a wafer W. The wafer W is an example of a substrate. The wafer W is, for example, a semiconductor wafer. The wafer W is, for example, a single-crystalline silicon carbide wafer.

[0025] The susceptor 14 is provided inside the reaction chamber 10. A wafer W can be placed on the susceptor 14. The susceptor 14 is an example of a holder. The susceptor 14 is placed on the upper region 16b of the rotating body 16.

[0026] Figure 3 is a top view of the susceptor according to the first embodiment. The susceptor 14 is composed of a plurality of members including an annular member 14a and a disk-shaped member 14b.

[0027] The disk-shaped member 14b is provided inside the annular member 14a. For example, a part of the disk-shaped member 14b is placed on the inner peripheral portion of the annular member 14a. The disk-shaped member 14b has a function of separating and transporting the wafer W from the annular member 14a outside the reaction chamber 10.

[0028] The susceptor 14 is formed of a material with high heat resistance. The susceptor 14 is, for example, silicon carbide or graphite. The susceptor 14 is, for example, graphite with a coated surface. The surface of the graphite is coated with, for example, silicon carbide or tantalum carbide. The upper surface of the annular member 14a is formed of, for example, silicon carbide.

[0029] The rotating body 16 is provided in the reaction chamber 10. The rotating body 16 includes a lower region 16a and an upper region 16b. The upper region 16b is provided above the lower region 16a. The upper region 16b is fixed to or integrated with the lower region 16a. A rotation mechanism 18 is connected to the lower region 16a of the rotating body 16. The rotating body 16 is rotatable using the rotation mechanism 18. When the rotating body 16 rotates, the susceptor 14 placed on the rotating body 16 rotates.

[0030] The lower region 16a includes a bottom surface portion 51. The upper region 16b includes a side surface portion 52 and an upper surface portion 53.

[0031] The bottom surface portion 51 is, for example, disk-shaped.

[0032] The side surface portion 52 is provided on the bottom surface portion 51. The side surface portion 52 is fixed to the bottom surface portion 51. The side surface portion 52 is cylindrical.

[0033] The upper surface portion 53 is provided on the side surface portion 52. The upper surface portion 53 is fixed to or integrated with the side surface portion 52. The upper surface portion 53 is annular.

[0034] FIG. 4 is a top view of the rotating body according to the first embodiment. FIG. 4 is a top view of the upper surface portion 53 of the rotating body 16. The upper surface portion 53 of the rotating body 16 includes an inner region 53x, an outer region 53y, and a convex region 53z. A plurality of circular through-holes 53a are provided in the upper surface portion 53 of the rotating body 16.

[0035] The inner region 53x, the outer region 53y, and the convex region 53z are annular. The outer region 53y surrounds the inner region 53x and the convex region 53z. The convex region 53z surrounds the inner region 53x.

[0036] The convex region 53z is provided between the inner region 53x and the outer region 53y. The convex region 53z protrudes upward from the upper surfaces of the inner region 53x and the outer region 53y. The convex region 53z suppresses the horizontal movement of the susceptor 14 placed on the inner region 53x.

[0037] An annular member 14a is provided above the outer region 53y. The upper surface of the outer region 53y and the lower surface of the annular member 14a are spaced apart. The upper surface of the outer region 53y and the lower surface of the annular member 14a do not contact each other. There is a gap between the upper surface of the outer region 53y and the lower surface of the annular member 14a.

[0038] The through-holes 53a are provided in the outer region 53y. A plurality of through-holes 53a are provided, for example, on the inner circumferential side of the outer region 53y. The plurality of through-holes 53a are provided, for example, at equal intervals on the same circumference. The through-holes 53a penetrate between the lower surface and the upper surface of the outer region 53y. The through-holes 53a are, for example, circular.

[0039] The through-holes 53a have a function of communicating the internal space of the rotating body 16 with the external space of the rotating body 16.

[0040] The through-holes 53a are provided, for example, above the upper end of the second reflector 30. For example, above the through-holes 53a, the annular member 14a of the susceptor 14 is provided.

[0041] The annular member 14a is provided above the through hole 53a and spaced apart from the through hole 53a. The bottom surface of the through hole 53a and the annular member 14a are spaced apart.

[0042] The rotation mechanism 18 is provided below the rotating body 16. The rotation mechanism 18 is connected to the lower region 16a of the rotating body 16.

[0043] The rotation mechanism 18 includes a rotating shaft 18a and a motor 18b. The rotating shaft 18a is rotated by the motor 18b.

[0044] The lower region 16a of the rotating body 16 is connected to the rotating shaft 18a. When the rotating shaft 18a is rotated by the motor 18b, the rotating body 16 rotates. When the rotating body 16 rotates, the susceptor 14 placed on the rotating body 16 rotates. When the susceptor 14 rotates, the wafer W placed on the susceptor 14 rotates.

[0045] By the rotation mechanism 18, for example, it is possible to rotate the wafer W at a rotation speed of 100 rpm or more and 3000 rpm or less.

[0046] The first heater 20 is provided below the susceptor 14. The first heater 20 is provided inside the rotating body 16. The first heater 20 heats the wafer W held by the susceptor 14 from below. The first heater 20 is, for example, a resistance heater. The first heater 20 is, for example, a disk shape with a comb-shaped pattern.

[0047] The first reflector 22 is provided below the first heater 20. The first heater 20 is provided between the first reflector 22 and the susceptor 14. The first reflector 22 is, for example, a disk shape.

[0048] The first reflector 22 reflects the heat radiated downward from the first heater 20 and improves the heating efficiency of the wafer W. Further, the first reflector 22 prevents the members below the first reflector 22 from being heated.

[0049] The first reflector 22 is formed of a material with high heat resistance. The first reflector 22 is, for example, silicon carbide or graphite. The first reflector 22 is, for example, graphite with a coated surface. The surface of the graphite is coated with, for example, silicon carbide or tantalum carbide.

[0050] The first reflector 22 is fixed to the fixing base 26 by, for example, a plurality of support columns 24. The fixing base 26 is supported by, for example, a fixing shaft 28.

[0051] In the rotating body 16, a push-up pin (not shown) is provided to detach the susceptor 14 from the rotating body 16. The push-up pin penetrates, for example, the first reflector 22 and the first heater 20.

[0052] The second reflector 30 is provided around the rotating body 16. The second reflector 30 is an example of a reflector. The second reflector 30 is cylindrical. The second reflector 30 is fixed to the bottom of the reaction chamber 10, for example.

[0053] The second reflector 30 reflects the heat radiated laterally from the first heater 20 and improves the heating efficiency of the wafer W. Also, the second reflector 30 prevents the members outside the second reflector 30 from being heated.

[0054] The second reflector 30 is formed of a material with high heat resistance. The second reflector 30 is, for example, silicon carbide or graphite. The second reflector 30 is, for example, graphite with a coated surface. The surface of the graphite is coated with, for example, silicon carbide or tantalum carbide.

[0055] The second heater 34 is provided between the hood 32 and the inner wall of the reaction chamber 10. The second heater 34 is located above the susceptor 14.

[0056] The second heater 34 heats the wafer W held by the susceptor 14 from above. By heating the wafer W with the second heater 34 in addition to the first heater 20, it becomes possible to heat the wafer W to a temperature required for the growth of the silicon carbide film, for example, a temperature of 1500 °C or higher. The second heater 34 is, for example, a resistance heater.

[0057] The hood 32 is, for example, cylindrical. The hood 32 prevents the process gas from contacting the second heater 34.

[0058] The hood 32 is formed of a highly heat-resistant material. The hood 32 is, for example, silicon carbide or graphite. The hood 32 is, for example, graphite with a coated surface. The surface of the graphite is coated with, for example, silicon carbide or tantalum carbide.

[0059] The gas outlet 36 is provided at the lower part of the reaction chamber 10. The gas outlet 36 discharges, for example, the excess process gas after the source gas has reacted on the surface of the wafer W to the outside of the reaction chamber 10. Further, the gas outlet 36 discharges, for example, the by-products generated after the source gas has reacted on the surface of the wafer W to the outside of the reaction chamber 10. The gas outlet 36 is connected to, for example, a vacuum pump (not shown).

[0060] The gas supply unit 38 is provided at the lower part of the reaction chamber 10. The gas supply unit 38 supplies a purge gas between the rotor 16 and the second reflector 30. The purge gas is, for example, argon gas.

[0061] By supplying the purge gas between the rotor 16 and the second reflector 30, for example, the deposition of by-products caused by the inflow of the process gas to the upper end of the second reflector 30 is suppressed.

[0062] The reaction chamber 10 is provided with a susceptor entrance / exit (not shown) and a gate valve for loading and unloading the susceptor 14 on which the wafer W is placed.

[0063] The buffer chamber 13 is provided above the reaction chamber 10. The buffer chamber 13 includes a partition plate 40 and a gas inlet 42.

[0064] The process gas G0 is introduced into the buffer chamber 13 from the gas inlet 42. The process gas G0 introduced from the gas inlet 42 is introduced into the buffer chamber 13 through the gas holes 44 provided in the partition plate 40.

[0065] The process gas G0 is, for example, a mixed gas including a source gas of silicon (Si), a source gas of carbon (C), a dopant gas of an n-type impurity, a dopant gas of a p-type impurity, an assist gas for suppressing the clustering of silicon, and a carrier gas. The source gas of silicon is, for example, silane (SiH 4 ). The source gas of carbon is, for example, propane (C 3 H 8 ). The dopant gas of the n-type impurity is, for example, nitrogen gas. The dopant gas of the p-type impurity is, for example, trimethylaluminum (TMA). The assist gas is, for example, hydrogen chloride (HCl). The carrier gas is, for example, argon gas or hydrogen gas. The source gas of silicon and the source gas of carbon are introduced into the reaction chamber 10 in a separated state, respectively.

[0066] Hereinafter, a method for forming a silicon carbide film on a wafer W using the vapor deposition apparatus 100 will be described with reference to FIG. 1.

[0067] When forming a silicon carbide film on the wafer W using the vapor deposition apparatus 100, first, the susceptor 14 on which the wafer W is placed is introduced into the reaction chamber 10. The susceptor 14 is placed on the rotating body 16.

[0068] The wafer W is heated using the first heater 20 and the second heater 34. For example, the wafer W is heated so as to reach 1500°C or higher. The process gas G0 is introduced from the buffer chamber 13 through a plurality of gas holes 44 into the reaction chamber 10 and supplied onto the wafer W.

[0069] A purge gas is supplied from the gas supply unit 38 between the rotating body 16 and the second reflector 30. The purge gas flows laterally out of the gap between the upper end of the second reflector 30 and the lower surface of the outer region 53y of the rotating body 16.

[0070] The susceptor 14 is rotated by rotating the rotating body 16 using the rotation mechanism 18. The wafer W placed on the susceptor 14 rotates together with the susceptor 14. A silicon carbide film is formed on the surface of the rotating wafer W.

[0071] Next, the operation and effects of the vapor deposition apparatus according to the first embodiment will be described.

[0072] FIG. 5 is an enlarged schematic cross-sectional view of a part of the vapor deposition apparatus of the comparative example. FIG. 6 is a top view of the rotating body of the comparative example.

[0073] FIG. 5 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. FIG. 5 is a cross-section taken along the line BB' of FIG. 6.

[0074] FIG. 5 is a view corresponding to FIG. 2 of the first embodiment. FIG. 6 is a view corresponding to FIG. 4 of the first embodiment.

[0075] The vapor deposition apparatus of the comparative example is different from the vapor deposition apparatus 100 of the first embodiment in that the through hole 53a is not provided in the upper region 16b of the rotating body 16. In the vapor deposition apparatus of the comparative example, the through hole 53a is not provided in the outer region 53y of the upper region 16b.

[0076] The upper region 16b of the rotating body 16 of the comparative example does not include the convex region 53z. The outer region 53y of the upper region 16b of the comparative example protrudes upward with respect to the inner region 53x. The outer region 53y suppresses the lateral movement of the susceptor 14 placed on the inner region 53x.

[0077] The upper surface of the outer region 53y and the lower surface of the annular member 14a are not separated. The upper surface of the outer region 53y and the lower surface of the annular member 14a are in contact.

[0078] FIG. 7 is an explanatory diagram of the first problem of the vapor deposition apparatus of the comparative example. FIG. 7 is a diagram corresponding to FIG. 5.

[0079] For example, during the process of forming a silicon carbide film on the wafer W, a pressure difference may occur between the inside and the outside of the rotating body 16. For example, when switching the type of process gas supplied into the reaction chamber 10, the pressure outside the rotating body 16 may instantaneously become lower than the pressure inside the rotating body 16. In other words, the pressure inside the rotating body 16 becomes higher than the pressure outside the rotating body 16.

[0080] When the pressure inside the rotating body 16 becomes higher than the pressure outside the rotating body 16, as shown in FIG. 7, the wafer W may be detached from the rotating body 16 on which it rotates. For example, as shown in FIG. 7, due to the pressure inside the rotating body 16, the disk-shaped member 14b is detached from the annular member 14a of the susceptor 14. By being pushed upward by the detached disk-shaped member 14b, the wafer W is detached from the rotating body 16

[0081] When the wafer W is detached from the rotating body 16, the growth of the silicon carbide film cannot be continued. Further, for example, the wafer W detached from the rotating body 16 may crack in the reaction chamber 10, and the reaction chamber 10 needs to be opened to the atmosphere and cleaned.

[0082] FIG. 8 is an explanatory diagram of the second problem of the vapor deposition apparatus of the comparative example. FIG. 8 is a diagram corresponding to FIG. 5.

[0083] When growing a silicon carbide film on the wafer W, the process gas G0 gets into the side of the rotating body 16. By the process gas G0 that has got in, the by-product 60 deposits on the upper end of the second reflector 30. When the amount of the deposited by-product 60 increases, for example, the replacement frequency of the second reflector 30 becomes higher.

[0084] FIG. 9 is an explanatory diagram of the operation and effect of the vapor deposition apparatus of the first embodiment. FIG. 9 is a diagram corresponding to FIG. 2.

[0085] In the vapor deposition apparatus 100 according to the first embodiment, a through hole 53a is provided in the upper region 16b of the rotating body 16. In the vapor deposition apparatus 100 according to the first embodiment, a through hole 53a is provided in the outer region 53y of the upper surface portion 53.

[0086] When the pressure inside the rotating body 16 becomes higher than the pressure outside the rotating body 16, as shown in FIG. 9, a gas flow is generated from the inside of the rotating body 16 through the through hole 53a toward the outside of the rotating body 16. Therefore, the difference between the pressure inside the rotating body 16 and the pressure outside the rotating body 16 decreases. Therefore, the separation of the wafer W from the rotating body 16 on which the wafer W rotates is suppressed.

[0087] Further, in the rotating body 16 of the vapor deposition apparatus 100 according to the first embodiment, a through hole 53a is provided in the outer region 53y, and there is a gap between the upper surface of the outer region 53y and the lower surface of the annular member 14a. Therefore, the gas flow from the inside of the rotating body 16 through the through hole 53a toward the outside of the rotating body 16 goes laterally through the space between the upper surface of the outer region 53y and the lower surface of the annular member 14a, as shown in FIG. 9. Also, for example, the gas flow goes downward at the end of the outer region 53y, as shown in FIG. 9.

[0088] Since the gas flow toward the outside of the rotating body 16 goes laterally or downward, the deposition of the by - product 60 on the upper end of the second reflector 30 is suppressed. When the amount of the deposited by - product 60 decreases, for example, the replacement frequency of the second reflector 30 becomes lower.

[0089] The through hole 53a is preferably provided above the upper end of the second reflector 30. With the above configuration, the gas flow toward the outside of the rotating body 16 goes from above the upper end of the second reflector 30 toward the outside of the rotating body 16. Therefore, the deposition of the by - product 60 on the upper end of the second reflector 30 is further suppressed.

[0090] There is a gap between the upper surface of the outer region 53y and the lower surface of the annular member 14a. Therefore, for example, the adhesion between the upper surface of the outer region 53y and the lower surface of the annular member 14a is suppressed. In other words, the adhesion between the rotating body 16 and the susceptor 14 is suppressed. The adhesion between the upper surface of the outer region 53y and the annular member 14a is caused by, for example, silicon carbide sublimated from the outer region 53y by heating when the outer region 53y is formed of silicon carbide.

[0091] (First Modification Example) FIG. 10 is an enlarged schematic cross-sectional view of a part of the vapor deposition apparatus according to the first modification example of the first embodiment. FIG. 10 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. FIG. 10 corresponds to FIG. 2 of the first embodiment.

[0092] The vapor deposition apparatus according to the first modification example is different from the vapor deposition apparatus 100 according to the first embodiment in that the susceptor 14 is not divided into the annular member 14a and the disk-shaped member 14b.

[0093] Also in the vapor deposition apparatus according to the first modification example, the through hole 53a is provided in the upper region 16b of the rotating body 16. Therefore, similar to the vapor deposition apparatus 100 according to the first embodiment, the separation of the wafer W from the rotating body 16 on which the wafer W rotates is suppressed.

[0094] (Second Modification Example) FIG. 11 is an enlarged schematic cross-sectional view of a part of the vapor deposition apparatus according to the second modification example of the first embodiment. FIG. 11 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. FIG. 11 corresponds to FIG. 2 of the first embodiment.

[0095] The vapor deposition apparatus according to the second modification example is different from the vapor deposition apparatus 100 according to the first embodiment in that the susceptor 14 is not divided into the annular member 14a and the disk-shaped member 14b. Also, it is different from the vapor deposition apparatus 100 according to the first embodiment in that the central portion of the susceptor 14 is an opening.

[0096] Also in the vapor growth apparatus of the second modification, a through hole 53a is provided in the upper region 16b of the rotating body 16. Therefore, similarly to the vapor growth apparatus 100 of the first embodiment, the wafer W is suppressed from detaching from the rotating body that rotates.

[0097] As described above, according to the vapor growth apparatuses of the first embodiment and the modification, detachment of the substrate from the rotating body can be suppressed.

[0098] (Second Embodiment) The vapor growth apparatus of the second embodiment is different from the vapor growth apparatus of the first embodiment in that the outer region of the upper surface portion of the rotating body is radial. Hereinafter, descriptions of contents overlapping with those of the first embodiment may be partially omitted.

[0099] FIG. 12 is an enlarged schematic cross-sectional view of a part of the vapor growth apparatus of the second embodiment. FIG. 12 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. FIG. 12 is a cross-section taken along the line CC' of FIG. 13.

[0100] FIG. 13 is a top view of the rotating body of the second embodiment. FIG. 13 is a top view of the upper surface portion 53 and the side surface portion 52 of the rotating body 16.

[0101] FIG. 14 is an enlarged schematic cross-sectional view of a part of the vapor growth apparatus of the second embodiment. FIG. 14 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. FIG. 14 is a cross-section taken along the line DD' of FIG. 13.

[0102] The upper surface portion 53 of the rotating body 16 includes an inner region 53x and an outer region 53y. A through hole 53a is provided in the upper surface portion 53 of the rotating body 16.

[0103] The inner region 53x is annular. The outer region 53y is radial. The outer region 53y surrounds the inner region 53x.

[0104] The upper surface of the outer region 53y protrudes upward from the upper surface of the inner region 53x. The outer region 53y suppresses the horizontal movement of the susceptor 14 placed on the inner region 53x.

[0105] An annular member 14a is provided above the outer region 53y. The upper surface of the outer region 53y and the lower surface of the annular member 14a are in contact with each other.

[0106] The through hole 53a is provided between the inner region 53x and the side surface portion 52. The through hole 53a is provided between the outer region 53y and the outer region 53y.

[0107] A plurality of through holes 53a are provided, for example, outside the inner region 53x along the outer periphery of the inner region 53x. The plurality of through holes 53a are provided, for example, at equal intervals on the same circle. The plurality of through holes 53a and the outer region 53y are alternately provided along the outer periphery of the inner region 53x.

[0108] The through hole 53a penetrates between the lower surface and the upper surface of the upper surface portion 53. The through hole 53a has a function of communicating the space inside the rotating body 16 and the space outside the rotating body 16.

[0109] The through hole 53a is provided, for example, above the upper end of the second reflector 30. For example, above the through hole 53a, an annular member 14a of the susceptor 14 is provided. The annular member 14a is provided above the through hole 53a and spaced apart from the through hole 53a.

[0110] FIG. 15 is an explanatory diagram of the operation and effects of the vapor deposition apparatus according to the second embodiment. FIG. 15 is a diagram corresponding to FIG. 12.

[0111] In the vapor deposition apparatus according to the second embodiment, a through hole 53a is provided in the upper region 16b of the rotating body 16. In the vapor deposition apparatus 100 according to the first embodiment, a through hole 53a is provided in the upper surface portion 53 of the upper region 16b.

[0112] Since the through-hole 53a is provided in the upper surface portion 53 of the rotating body 16, when the pressure inside the rotating body 16 becomes higher than the pressure outside the rotating body 16, as shown in FIG. 15, a gas flow occurs from the inside of the rotating body 16 through the through-hole 53a toward the outside of the rotating body 16. Therefore, the difference between the pressure inside the rotating body 16 and the pressure outside the rotating body 16 decreases. Thus, the separation of the wafer W from the rotating body 16 due to the pressure inside the rotating body 16 is suppressed.

[0113] Also, as shown in FIG. 15, the gas flow from the inside of the rotating body 16 through the through-hole 53a toward the outside of the rotating body 16 travels laterally through the space between the upper end of the side surface portion 52 and the lower surface of the annular member 14a. Further, for example, the gas flow is directed downward outside the side surface portion 52 as shown in FIG. 15.

[0114] The gas flow from the inside of the rotating body 16 through the through-hole 53a toward the outside of the rotating body 16 travels laterally or downward, thereby suppressing the deposition of the by-product 60 on the upper end of the second reflector 30. When the amount of the deposited by-product 60 decreases, for example, the replacement frequency of the second reflector 30 decreases.

[0115] The through-hole 53a is preferably provided above the upper end of the second reflector 30. With the above configuration, the gas flow from the inside of the rotating body 16 through the through-hole 53a toward the outside of the rotating body 16 travels toward the outside of the rotating body 16 from above the upper end of the second reflector 30. Therefore, the deposition of the by-product 60 on the upper end of the second reflector 30 is further suppressed.

[0116] In the vapor deposition apparatus of the second embodiment, the size of the through-hole 53a can be made larger compared to the vapor deposition apparatus 100 of the first embodiment. Therefore, compared to the first embodiment, it is easier to reduce the difference between the pressure inside the rotating body 16 and the pressure outside the rotating body 16. Thus, the separation of the wafer W from the rotating body 16 due to the pressure inside the rotating body 16 is further suppressed.

[0117] (Modification example) FIG. 16 is a top view of a rotating body according to a modification of the second embodiment. FIG. 16 is a top view of the upper surface portion 53 and the side surface portion 52 of the rotating body 16. FIG. 16 is a view corresponding to FIG. 13 of the second embodiment.

[0118] FIG. 17 is an enlarged schematic cross-sectional view of a part of a vapor deposition apparatus according to a modification of the second embodiment. FIG. 17 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. FIG. 17 is a cross-section taken along the line EE' of FIG. 16. FIG. 17 is a view corresponding to FIG. 14 of the second embodiment.

[0119] The vapor deposition apparatus according to the modification is different from the vapor deposition apparatus of the second embodiment in that the outer peripheral end of the outer region 53y coincides with the outer peripheral end of the side surface portion 52.

[0120] Also in the vapor deposition apparatus according to the modification, a through hole 53a is provided in the upper surface portion 53 of the rotating body 16. Therefore, similarly to the vapor deposition apparatus of the second embodiment, the wafer W is suppressed from detaching from the rotating body 16 that rotates.

[0121] As described above, according to the vapor deposition apparatuses of the second embodiment and the modification, detachment of the substrate from the rotating body can be suppressed.

[0122] (Third Embodiment) The vapor deposition apparatus of the third embodiment is different from the vapor deposition apparatus of the first embodiment in that the through hole provided in the upper region of the rotating body does not directly face the lower surface of the holder. Hereinafter, for the content overlapping with the first embodiment, some descriptions may be omitted.

[0123] FIG. 18 is an enlarged schematic cross-sectional view of a part of a vapor deposition apparatus according to the third embodiment. FIG. 18 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. FIG. 18 is a cross-section taken along the line HH' of FIGS. 19, 20, and 21.

[0124] FIG. 19 is a top view of a rotating body according to the third embodiment. FIG. 19 is a top view of the upper surface portion 53 of the rotating body 16.

[0125] Figure 20 is a cross-sectional view of the rotating body of the third embodiment. Figure 20 is a cross-sectional view of the upper surface portion 53 of the rotating body 16. Figure 20 is the FF' cross-section of Figure 18. In Figure 20, a pattern obtained by projecting the shape of the II' cross-section of Figure 18 (corresponding to Figure 21) is shown by a dotted line.

[0126] Figure 21 is a cross-sectional view of the rotating body of the third embodiment. Figure 21 is a cross-sectional view of the upper surface portion 53 of the rotating body 16. Figure 21 is the GG' cross-section of Figure 18.

[0127] Figure 22 is an enlarged schematic cross-sectional view of a part of the vapor deposition apparatus of the third embodiment. Figure 22 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. Figure 22 is the II' cross-section of Figures 19, 20, and 21.

[0128] As shown in Figure 19, the upper surface portion 53 of the rotating body 16 includes an inner region 53x, an outer region 53y, and a convex region 53z. The inner region 53x, the outer region 53y, and the convex region 53z are annular. The outer region 53y surrounds the inner region 53x and the convex region 53z. The convex region 53z surrounds the inner region 53x.

[0129] The convex region 53z is provided between the inner region 53x and the outer region 53y. The convex region 53z protrudes upward from the upper surface of the inner region 53x and the upper surface of the outer region 53y. The convex region 53z suppresses the lateral movement of the susceptor 14 placed on the inner region 53x.

[0130] An annular member 14a is provided above the outer region 53y. The upper surface of the outer region 53y and the lower surface of the annular member 14a are separated. The upper surface of the outer region 53y and the lower surface of the annular member 14a do not contact. There is a gap between the upper surface of the outer region 53y and the lower surface of the annular member 14a.

[0131] As shown in Figure 20, the through holes 53a are provided in the outer region 53y. A plurality of through holes 53a are provided, for example, on the inner circumferential side of the outer region 53y. The plurality of through holes 53a are provided, for example, at equal intervals on the same circumference. The through holes 53a are, for example, circular.

[0132] The through-hole 53a has a function of communicating the space inside the rotating body 16 with the space outside the rotating body 16.

[0133] The through-hole 53a is provided, for example, above the upper end of the second reflector 30. For example, an annular member 14a of the susceptor 14 is provided above the through-hole 53a.

[0134] A part of the outer region 53y exists above the through-hole 53a. The through-hole 53a does not directly face the lower surface of the annular member 14a of the susceptor 14.

[0135] As shown in FIG. 21, in the GG' cross-section, the outer region 53y is radial. The radially provided portion of the outer region 53y has a function of mechanically supporting the gap provided inside the outer region 53y.

[0136] FIG. 23 is an explanatory diagram of the operation and effects of the vapor deposition apparatus according to the third embodiment. FIG. 23 corresponds to FIG. 18.

[0137] In the vapor deposition apparatus according to the third embodiment, a through-hole 53a is provided in the upper region 16b of the rotating body 16. In the vapor deposition apparatus according to the third embodiment, a through-hole 53a is provided in the upper surface portion 53 of the upper region 16b.

[0138] When the through-hole 53a is provided in the upper surface portion 53 of the rotating body 16 and the pressure inside the rotating body 16 becomes higher than the pressure outside the rotating body 16, as shown in FIG. 23, a gas flow occurs from the inside of the rotating body 16 through the through-hole 53a toward the outside of the rotating body 16. Therefore, the difference between the pressure inside the rotating body 16 and the pressure outside the rotating body 16 decreases. Thus, the wafer W is suppressed from detaching from the rotating body 16 that rotates due to the pressure inside the rotating body 16.

[0139] In addition, a through hole 53a is provided in the outer region 53y of the rotating body 16 of the vapor deposition apparatus according to the third embodiment. And there is a gap provided inside the outer region 53y of the rotating body 16 that communicates the through hole 53a with the outside of the rotating body 16. Therefore, the gas flow from the inside of the rotating body 16 through the through hole 53a toward the outside of the rotating body 16 goes laterally through the gap provided inside the outer region 53y, as shown in FIG. 23. Also, for example, the gas flow is directed downward at the end of the outer region 53y, as shown in FIG. 23.

[0140] Since the gas flow from the inside of the rotating body 16 through the through hole 53a toward the outside of the rotating body 16 goes laterally or downward, deposition of the by-product 60 on the upper end of the second reflector 30 is suppressed. When the amount of the deposited by-product 60 decreases, for example, the replacement frequency of the second reflector 30 decreases.

[0141] The through hole 53a is preferably provided above the upper end of the second reflector 30. With the above configuration, the gas flow from the inside of the rotating body 16 through the through hole 53a toward the outside of the rotating body 16 goes toward the outside of the rotating body 16 from above the upper end of the second reflector 30. Therefore, deposition of the by-product 60 on the upper end of the second reflector 30 is further suppressed.

[0142] In the vapor deposition apparatus according to the third embodiment, unlike the vapor deposition apparatus 100 according to the first embodiment, the through hole 53a does not directly face the lower surface of the annular member 14a of the susceptor 14. Therefore, it is possible to suppress the gas flow from the through hole 53a from affecting the susceptor 14. For example, it is possible to suppress the generation of undesirable vibrations in the susceptor 14 due to the gas flow from the through hole 53a.

[0143] In the vapor deposition apparatus according to the third embodiment, there is a gap between the upper surface of the outer region 53y and the lower surface of the annular member 14a. Therefore, for example, adhesion between the upper surface of the outer region 53y and the lower surface of the annular member 14a is suppressed. In other words, adhesion between the rotating body 16 and the susceptor 14 is suppressed.

[0144] (Modification Example) FIG. 24 is an enlarged schematic cross-sectional view of a part of a vapor deposition apparatus according to a modification example of the third embodiment. FIG. 24 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10. FIG. 24 corresponds to FIG. 18 of the third embodiment.

[0145] The vapor deposition apparatus according to the modification example is different from the vapor deposition apparatus according to the third embodiment in that there is no gap between the upper surface of the outer region 53y and the lower surface of the annular member 14a.

[0146] Also in the vapor deposition apparatus according to the modification example, a through hole 53a is provided in the upper surface portion 53 of the rotating body 16. Therefore, similar to the vapor deposition apparatus according to the third embodiment, the wafer W is suppressed from detaching from the rotating body 16 that rotates.

[0147] As described above, according to the vapor deposition apparatuses of the third embodiment and the modification example, detachment of the substrate from the rotating body can be suppressed.

[0148] (Fourth Embodiment) The vapor deposition apparatus according to the fourth embodiment is different from the vapor deposition apparatus according to the first embodiment in that the through hole is provided in the side surface portion of the upper region of the rotating body. Hereinafter, for the content overlapping with the first embodiment, some descriptions may be omitted.

[0149] FIG. 25 is an enlarged schematic cross-sectional view of a part of the vapor deposition apparatus according to the fourth embodiment. FIG. 25 is an enlarged schematic cross-sectional view of the lower part of the reaction chamber 10.

[0150] A through hole 52a is provided in the side surface portion 52 of the upper region 16b of the rotating body 16. The through hole 52a penetrates between the inside and the outside of the side surface portion 52.

[0151] For example, a plurality of through holes 52a are provided along the outer peripheral surface of the side surface portion 52. The through hole 52a is provided, for example, so as to face the second reflector 30. The shape of the through hole 52a is, for example, circular or rectangular.

[0152] FIG. 26 is an explanatory diagram of the operation and effects of the vapor deposition apparatus according to the fourth embodiment. FIG. 26 corresponds to FIG. 25.

[0153] By providing the through-hole 52a in the side surface portion 52, when the pressure inside the rotating body 16 becomes higher than the pressure outside the rotating body 16, as shown in FIG. 26, a gas flow occurs from the inside of the rotating body 16 through the through-hole 52a toward the outside of the rotating body 16. Therefore, the difference between the pressure inside the rotating body 16 and the pressure outside the rotating body 16 decreases. Thus, the separation of the wafer W from the rotating body 16 rotated by the pressure inside the rotating body 16 is suppressed.

[0154] In the vapor deposition apparatus according to the fourth embodiment, unlike the vapor deposition apparatus 100 according to the first embodiment, the through-hole 52a does not directly face the susceptor 14. Therefore, it is possible to suppress the gas flow from the through-hole 52a from affecting the susceptor 14. For example, it is possible to suppress the occurrence of undesirable vibrations in the susceptor 14 due to the gas flow from the through-hole 52a.

[0155] As described above, according to the vapor deposition apparatus of the fourth embodiment, the separation of the substrate from the rotating body can be suppressed.

[0156] As described above, the embodiments of the present invention have been described with reference to specific examples. The above embodiments are merely examples and do not limit the present invention. Also, the components of each embodiment may be combined as appropriate.

[0157] In the embodiment, the case of forming a single-crystalline silicon carbide film has been described as an example, but the present invention can also be applied to the formation of a polycrystalline or amorphous silicon carbide film. Also, the present invention can be applied to the formation of films other than the silicon carbide film.

[0158] Also, in the embodiment, a single-crystalline silicon carbide wafer has been described as an example of the substrate, but the substrate is not limited to a single-crystalline silicon carbide wafer.

[0159] In the embodiments, descriptions of parts that are not directly necessary for the description of the present invention, such as the device configuration and manufacturing method, are omitted, but the required device configuration, manufacturing method, etc. can be appropriately selected and used. In addition, all vapor deposition apparatuses that include the elements of the present invention and can be appropriately designed and modified by those skilled in the art are included in the scope of the present invention. The scope of the present invention is defined by the scope of the claims and their equivalents.

Description of Reference Numerals

[0160] 10 Reaction chamber 14 Susceptor (holder) 14a Annular member 14b Disk-shaped member 16 Rotating body 16a Lower region 16b Upper region 18 Rotation mechanism 30 Second reflector (reflector) 38 Gas supply unit 51 Bottom surface portion 52 Side surface portion 52a Through hole 53 Upper surface portion 53a Through hole 100 Vapor deposition apparatus W Wafer (substrate)

Claims

1. A reaction chamber, a rotator provided in the reaction chamber for supporting and rotating a substrate, and a rotation mechanism connected to the rotator, wherein the rotator includes a lower region having a bottom surface portion and an upper region having a cylindrical side surface portion provided on the bottom surface portion, and a through hole communicating the inside and outside of the rotator is provided in the upper region, a vapor phase growth apparatus .

2. The upper region of the rotator further has an annular upper surface portion provided on the side surface portion, and the through hole is provided in the upper surface portion. The vapor phase growth apparatus according to Claim 1.

3. a cylindrical reflector provided around the rotator, and a gas supply unit for supplying gas between the rotator and the reflector, further comprising: The through hole is provided above the upper end of the reflector. The vapor phase growth apparatus according to Claim 1 or 2.

4. further comprising a holder supported on the upper region, the holder including an annular member and a disk-shaped member provided inside the annular member and placed on the annular member. The vapor phase growth apparatus according to Claim 1.

5. The annular member is placed above the through hole and spaced apart from the through hole. The vapor phase growth apparatus according to Claim 4.

Images