Semiconductor manufacturing equipment and method for manufacturing semiconductor

Abstract

To suppress performance degradation of a semiconductor device due to wire bonding.SOLUTION: Semiconductor manufacturing equipment related to the technology disclosed in the present application specification is semiconductor manufacturing equipment for performing wire bonding to form electrical circuits of semiconductor devices, and comprises a capillary capable of extending metal wires, a US horn to vibrate the capillary, a fixing section for fixing a semiconductor device, and a heating section for heating only a portion of the semiconductor device when the tip of the molten metal wire is brought into contact with the semiconductor device fixed in the fixing section.SELECTED DRAWING: Figure 4

Description

[Technical field]

[0001] The technology disclosed in this specification relates to a manufacturing technology for a semiconductor device. [Background technology]

[0002] When manufacturing a semiconductor device, wire bonding is performed between a semiconductor element and a lead frame. Wire bonding uses materials such as gold, silver, or copper, and requires weight, ultrasonic waves, or heat for bonding (see, for example, Patent Document 1). [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 06-163626 Summary of the Invention [Problem to be solved by the invention]

[0004] Since the lead frame is made of copper, it oxidizes when heated, and therefore if the lead frame is also heated during wire bonding, this can cause a decrease in the performance of the manufactured semiconductor device (for example, poor adhesion of the insulating sheet).

[0005] The technology disclosed in this specification has been made in consideration of the problems described above, and is a technology for suppressing the degradation of performance of a semiconductor device that accompanies wire bonding. [Means for solving the problem]

[0006] A semiconductor manufacturing apparatus that is a first aspect of the technology disclosed in the present specification is a semiconductor manufacturing apparatus for performing wire bonding to form an electrical circuit of a semiconductor device, and includes a capillary capable of extending a metal wire, a US horn for vibrating the capillary, a fixing part for fixing the semiconductor device, and a heating part for heating only a portion of the semiconductor device when bringing a tip of the molten metal wire into contact with the semiconductor device fixed to the fixing part. Effect of the Invention

[0007] According to at least the first aspect of the technology disclosed in the present specification, when joining a metal wire to a semiconductor device, only a portion of the semiconductor device can be heated, thereby suppressing performance degradation of the semiconductor device due to joining of the metal wire.

[0008] Furthermore, objects, features, aspects and advantages associated with the technology disclosed herein will become more apparent from the detailed description set forth below and the accompanying drawings. [Brief description of the drawings]

[0009] [Figure 1] FIG. 2 is a front view showing an example of the configuration of an operating section of a wire bonding apparatus. [Diagram 2] 1 is a side view showing an example of the configuration of an operating section of a wire bonding apparatus; [Diagram 3] 1A-1C are diagrams illustrating an example of a wire bonding process. [Figure 4] 1A to 1C are diagrams illustrating an example of a wire bonding process according to an embodiment. [Diagram 5] 4 is a flowchart illustrating an example of a wire bonding process according to an embodiment. [Figure 6] 4 is a flowchart illustrating an example of a wire bonding process according to an embodiment. [Figure 7] 4 is a flowchart illustrating an example of a wire bonding process according to an embodiment. [Figure 8] 4 is a flowchart illustrating an example of a wire bonding process according to an embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0010] Hereinafter, the embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features are shown for the purpose of explaining the technology, but they are merely examples and are not necessarily essential features for enabling the embodiments to be implemented.

[0011] The drawings are schematic, and for the sake of convenience, configurations may be omitted or simplified as appropriate. The size and positional relationship of the configurations shown in different drawings are not necessarily described accurately, and may be changed as appropriate. Hatching may be used in drawings such as plan views that are not cross-sectional views to facilitate understanding of the contents of the embodiments.

[0012] In the following description, the same components are denoted by the same reference numerals, and their names and functions are also the same. Therefore, detailed descriptions thereof may be omitted to avoid duplication.

[0013] Furthermore, in the description in this specification, when a certain component is described as "comprising," "including," or "having," unless otherwise specified, this is not an exclusive expression that excludes the presence of other components.

[0014] Furthermore, even if ordinal numbers such as "first" or "second" are used in the description of this specification, these terms are used for convenience to facilitate understanding of the contents of the embodiments, and the contents of the embodiments are not limited to the orders that may result from these ordinal numbers.

[0015] Furthermore, although the descriptions in this specification may use terms indicating specific positions or directions, such as "top," "bottom," "left," "right," "side," "bottom," "front," or "back," these terms are used for convenience to facilitate understanding of the contents of the embodiments, and do not relate to the positions or directions in which the embodiments are actually implemented.

[0016] In addition, in the description of the present specification, when "the upper surface of ..." or "the lower surface of ..." is stated, it is intended to include not only the upper surface or lower surface of the target component itself, but also a state in which another component is formed on the upper surface or lower surface of the target component. In other words, for example, when it is stated that "B is provided on the upper surface of A," it does not prevent another component "C" from being interposed between A and B.

[0017] First, a wire bonding process for forming an electric circuit of a semiconductor device will be described.

[0018] Fig. 1 is a front view showing an example of the configuration of the operating part of wire bonding equipment. As shown in Fig. 1, a metal wire 3 extends from the tip of a capillary 2 attached to the tip of an ultrasonic horn (US horn) 1, and a spark rod 5 is provided that faces the metal wire 3. Also provided is a non-contact heat source 12 for heating the metal wire 3 and its wiring target. The metal wire 3 is a wire made of a metal with low electrical resistance, such as gold, silver, copper, or aluminum.

[0019] Fig. 2 is a side view showing an example of the configuration of the operating part of the wire bonding equipment. As shown in Fig. 2, a capillary 2 is attached so as to penetrate the tip of a US horn 1, and a FAB 4 (described later) is formed on the tip of a metal wire 3 extending from the tip of the capillary 2.

[0020] The initial operation (first process) of the wire bonding process is the operation of forming a FAB 4 on the metal wire 3 extending from the tip of the capillary 2. This is called a spark operation. As shown in Fig. 1, by discharging from a spark rod 5 toward the tip of the metal wire 3, the tip of the metal wire 3 is melted to form a FAB 4.

[0021] The second process is an operation of bonding the FAB 4 to a bonding surface such as an electrode of the semiconductor element 6. Here, Fig. 3 is a diagram showing an example of a wire bonding process.

[0022] In the second process, as shown in Fig. 3, the entire copper lead frame 8 is heated by a heater plate jig 90. Then, the FAB 4 is pressed against the semiconductor element 6 bonded to the lead frame 8 by the die bond bonding material 7, and further, the capillary 2 is moved up and down in the Z direction and back and forth in the XY direction to apply US (ultrasonic waves) for bonding.

[0023] Here, the lead frame 8 is formed by processing a metal plate. The lead frame 8 is provided not only in an area overlapping the semiconductor element 6 or the joint of the metal wire 3 in a plan view, but also extending to other areas, and is formed, for example, in a lattice or stripe shape in a plan view. The heater plate jig 90 heats the entire lower surface of the lead frame 8, which is provided extending in a plan view.

[0024] In the third process, as shown in an example in Figure 3, after bonding the FAB 4 to the semiconductor element 6, the US horn 1 repeats fine movements in the Z direction and the XY directions to shape the metal wire 3 into a desired trajectory.

[0025] In the fourth process, the metal wire 3 is bonded to the other surface to be bonded that forms an electrical bond. As shown in Fig. 3, the metal wire 3 that has been bent in the third process is pressed against the bonding surface of the lead frame 8 and bonded by applying US (ultrasonic waves). The lead frame 8 to which the metal wire 3 is bonded may be the same lead frame 8 as the lead frame 8 bonded to the semiconductor element 6 with the die bond bonding material 7, or it may be a lead frame 8 that is not electrically connected.

[0026] The above is an outline of the wire bonding process. During the wire bonding process, it is essential to constantly heat the wiring target (i.e., the semiconductor element 6) of the metal wire 3 by the heater plate jig 90 and the non-contact heat source 12.

[0027] Generally, in the manufacture of a semiconductor device, there are a plurality of metal wires 3 that are wired in the above-mentioned four processes. The other bonded surface of the metal wire 3 (i.e., the bonded surface that is not the semiconductor element 6 in FIG. 3) is not always the top surface of the lead frame 8 as shown in FIG. 3, but may be the top surface of the semiconductor element 6 bonded to the lead frame 8 via a bonding material (not shown here).

[0028] In the manufacture of a semiconductor device, wiring is formed by the above four processes. Wire bonding is performed by, for example, joining using a metal wire. The wiring target may be a small semiconductor element 6 having a conductive lead frame, a rectangular shape, and a short side of 3.5 mm or less. The dimensions of the semiconductor element 6 may be, for example, a vertical dimension of 3.5 mm or less, a horizontal dimension of 7 mm or less, and a thickness of 0.5 mm or less. The semiconductor element 6 may be, for example, an IC element. When the semiconductor element 6 is an IC element, the wire diameter may be φ50 or less.

[0029] <First embodiment> A semiconductor manufacturing apparatus and a semiconductor manufacturing method according to the present embodiment will be described below.

[0030] <Configuration of semiconductor manufacturing equipment> In this embodiment, a method for applying heat required for wiring operation of metal wire 3 to a wiring target using wire bonding equipment as semiconductor manufacturing equipment will be described.

[0031] Fig. 4 is a diagram showing an example of a wire bonding process according to the present embodiment, and Fig. 5 is a flowchart showing the example of the wire bonding process according to the present embodiment.

[0032] The lead frame 8 has a complex shape depending on the final product form. In this embodiment, the shape of the lead frame 8 is set in advance in the wire bonding equipment. Specifically, as shown in FIG. 4, a part of the heater plate jig is raised (protruded upward) according to the shape of the lead frame 8. In FIG. 4, a raised heater plate jig 9 and a non-raised heater plate jig 10 are shown, but since the part of the heater plate jig that is raised can be changed depending on the shape of the lead frame 8, the position of the heater plate jig 9 is not limited to the part shown in FIG. 4. The raising is achieved by raising and lowering a part of the heater plate jig by a lifting and lowering drive mechanism (not shown).

[0033] Then, the lead frame 8 is transported to the operating section of the wire bonding equipment (step ST01 in FIG. 5). Then, the heater plate jig 9 in the raised position heats the lead frame 8 (step ST02 in FIG. 5). At this time, the heater plate jig 10 in a preset location where the lead frame 8 is not placed waits in a lower position to prevent excessive heating. It does not matter whether the heater plate jig 10 is heating or not while in standby.

[0034] The lead frame 8 is also provided in an area that does not overlap with the semiconductor element 6 or the joint of the metal wire 3 in a planar view, but the heater plate jig 9 in the raised position is provided in an area that overlaps with the semiconductor element 6 or the joint of the metal wire 3, and heating of the lead frame 8 by the heater plate jig 9 is localized.

[0035] In addition to the heating, the lead frame 8 is sucked and fixed by the negative pressure of dry air through the suction holes 11 (step ST03 in FIG. 5). Dry air is dry air, and has the advantage of being excellent in terms of supply costs.

[0036] Thereafter, the metal wire 3 is wired by a wire bonding process including the first process, the second process, the third process, and the fourth process as shown in Fig. 2 (step ST04 in Fig. 5). When the tip (FAB4) of the molten metal wire 3 is brought into contact with the upper surface of the semiconductor element 6 or the lead frame 8, only a part of the lead frame 8 (for example, only the area overlapping the joint of the metal wire 3 in a plan view) is heated by a heater plate jig 9. Thereafter, the lead frame 8 is transported outside the device (step ST05 in Fig. 5).

[0037] According to the above configuration, the lead frame 8 can be locally heated by the heater plate jig 9 in the raised position, thereby suppressing oxidation of the lead frame 8. As a result, it is possible to suppress deterioration in performance of the manufactured semiconductor device (for example, poor adhesion of the insulating sheet) and improve productivity.

[0038] <Second embodiment> A semiconductor manufacturing apparatus and a semiconductor manufacturing method according to the present embodiment will be described. In the following description, components similar to those described in the above embodiment are illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate.

[0039] In this embodiment, a method for applying heat required for wiring the metal wire 3 to a wiring target using wire bonding equipment as a semiconductor manufacturing device will be described. Fig. 6 is a flow chart showing an example of a wire bonding process according to this embodiment.

[0040] Depending on the final product form, the lead frame 8 has a complex shape. In this embodiment, the shape of the lead frame 8 is set in advance in the wire bonding equipment. Specifically, as shown in FIG. 4, a part of the heater plate jig is raised to match the shape of the lead frame 8.

[0041] Then, the lead frame 8 is transported to the operating section of the wire bonding equipment (step ST01 in FIG. 6). Then, the heater plate jig 9 in the raised position heats the lead frame 8 (step ST02 in FIG. 6). At this time, the heater plate jig 10 in the predetermined location where the lead frame 8 is not placed waits in a lower position to prevent excessive heating. It does not matter whether the heater plate jig 10 heats up during the waiting state or not.

[0042] The lead frame 8 is also provided in an area that does not overlap with the semiconductor element 6 or the joint of the metal wire 3 in a planar view, but the heater plate jig 9 in the raised position is provided in an area that overlaps with the semiconductor element 6 or the joint of the metal wire 3, and heating of the lead frame 8 by the heater plate jig 9 is localized.

[0043] In addition to the heating, the lead frame 8 is sucked and fixed by nitrogen negative pressure through the suction holes 11 (step ST13 in FIG. 6). Nitrogen has an advantage in that it is capable of suppressing oxidation due to heating.

[0044] Thereafter, the metal wire 3 is wired by a wire bonding process including the first process, the second process, the third process, and the fourth process as shown in Fig. 2 (step ST04 in Fig. 6). When the tip (FAB4) of the molten metal wire 3 is brought into contact with the upper surface of the semiconductor element 6 or the lead frame 8, only a part of the lead frame 8 is heated by the heater plate jig 9. Thereafter, the lead frame 8 is transported outside the device (step ST05 in Fig. 6).

[0045] According to the above configuration, the lead frame 8 can be locally heated by the heater plate jig 9 in the raised position, thereby suppressing oxidation of the lead frame 8. As a result, it is possible to suppress deterioration in performance of the manufactured semiconductor device (for example, poor adhesion of the insulating sheet) and improve productivity.

[0046] <Third embodiment> A semiconductor manufacturing apparatus and a semiconductor manufacturing method according to the present embodiment will be described. In the following description, components similar to those described in the above embodiment are illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate.

[0047] <Configuration of semiconductor manufacturing equipment> In this embodiment, a method for applying heat required for wiring the metal wire 3 to a wiring target using wire bonding equipment as a semiconductor manufacturing device will be described. Fig. 7 is a flow chart showing an example of a wire bonding process according to this embodiment.

[0048] Depending on the final product form, the lead frame 8 has a complex shape. In this embodiment, the shape of the lead frame 8 is set in advance in the wire bonding equipment. Specifically, as shown in FIG. 4, a part of the heater plate jig is raised to match the shape of the lead frame 8.

[0049] Then, the lead frame 8 is transported to the operating section of the wire bonding equipment (step ST01 in FIG. 7). Then, the heater plate jig 9 in the raised position heats the lead frame 8 (step ST02 in FIG. 7). At this time, the heater plate jig 10 in a preset location where the lead frame 8 is not placed waits in a lower position to prevent excessive heating. It does not matter whether the heater plate jig 10 heats up during the waiting state or not.

[0050] The lead frame 8 is also provided in an area that does not overlap with the semiconductor element 6 or the joint of the metal wire 3 in a planar view, but the heater plate jig 9 in the raised position is provided in an area that overlaps with the semiconductor element 6 or the joint of the metal wire 3, and heating of the lead frame 8 by the heater plate jig 9 is localized.

[0051] At this time, in order to improve the heating capacity, the wiring target (i.e., the semiconductor element 6) is heated by a non-contact heat source 12 such as a heater (step ST20 in FIG. 7). The layout of the non-contact heat source 12 can be changed within the device, allowing for a high degree of design freedom. By heating with the non-contact heat source 12, the time required for the wiring target (i.e., the semiconductor element 6) to rise to an appropriate temperature for joining the metal wire 3 is shortened.

[0052] In addition to the heating, the lead frame 8 is sucked and fixed by negative pressure of dry air through the suction holes 11 (step ST03 in FIG. 7). Dry air has an advantage in terms of supply costs.

[0053] Thereafter, the metal wire 3 is wired by a wire bonding process including the first process, the second process, the third process, and the fourth process as shown in Fig. 2 (step ST04 in Fig. 7). When the tip (FAB4) of the molten metal wire 3 is brought into contact with the upper surface of the semiconductor element 6 or the lead frame 8, only a part of the lead frame 8 is heated by the heater plate jig 9. Thereafter, the lead frame 8 is transported outside the device (step ST05 in Fig. 7).

[0054] According to the above configuration, the lead frame 8 can be locally heated by the heater plate jig 9 in the raised position, so that oxidation of the lead frame 8 can be suppressed. In addition, by also performing heating with the non-contact heat source 12, the heating time can be shortened. As a result, the deterioration of the performance of the manufactured semiconductor device (for example, poor adhesion of the insulating sheet) can be suppressed, and productivity can be improved.

[0055] <Fourth embodiment> A semiconductor manufacturing apparatus and a semiconductor manufacturing method according to the present embodiment will be described. In the following description, components similar to those described in the above embodiment are illustrated with the same reference numerals, and detailed description thereof will be omitted as appropriate.

[0056] <Configuration of semiconductor manufacturing equipment> In this embodiment, a method for applying heat required for wiring the metal wire 3 to a wiring target using wire bonding equipment as a semiconductor manufacturing device will be described. Fig. 8 is a flowchart showing an example of a wire bonding process according to this embodiment.

[0057] Depending on the final product form, the lead frame 8 has a complex shape. In this embodiment, the shape of the lead frame 8 is set in advance in the wire bonding equipment. Specifically, as shown in FIG. 4, a part of the heater plate jig is raised to match the shape of the lead frame 8.

[0058] Then, the lead frame 8 is transported to the operating section of the wire bonding equipment (step ST01 in FIG. 8). Then, the heater plate jig 9 in the raised position heats the lead frame 8 (step ST02 in FIG. 8). At this time, the heater plate jig 10 in a preset location where the lead frame 8 is not placed waits in a lower position to prevent excessive heating. It does not matter whether the heater plate jig 10 is heating or not while in standby.

[0059] The lead frame 8 is also provided in an area that does not overlap with the semiconductor element 6 or the joint of the metal wire 3 in a planar view, but the heater plate jig 9 in the raised position is provided in an area that overlaps with the semiconductor element 6 or the joint of the metal wire 3, and heating of the lead frame 8 by the heater plate jig 9 is localized.

[0060] At this time, in order to improve the heating capacity, the wiring target (i.e., the semiconductor element 6) is heated by a non-contact heat source 12 such as a heater (step ST20 in FIG. 8). By heating with the non-contact heat source 12, the time required for the wiring target (i.e., the semiconductor element 6) to rise to an appropriate temperature for joining the metal wire 3 is shortened.

[0061] In addition to the heating, the lead frame 8 is sucked and fixed by nitrogen negative pressure through the suction holes 11 (step ST13 in FIG. 8). Nitrogen has an advantage in that it is capable of suppressing oxidation due to heating.

[0062] Thereafter, the metal wire 3 is wired by a wire bonding process including the first process, the second process, the third process, and the fourth process as shown in Fig. 2 (step ST04 in Fig. 8). When the tip (FAB4) of the molten metal wire 3 is brought into contact with the upper surface of the semiconductor element 6 or the lead frame 8, only a part of the lead frame 8 is heated by the heater plate jig 9. Thereafter, the lead frame 8 is transported outside the device (step ST05 in Fig. 8).

[0063] According to the above configuration, the lead frame 8 can be locally heated by the heater plate jig 9 in the raised position, so that oxidation of the lead frame 8 can be suppressed. In addition, by also performing heating with the non-contact heat source 12, the heating time can be shortened. As a result, the deterioration of the performance of the manufactured semiconductor device (for example, poor adhesion of the insulating sheet) can be suppressed, and productivity can be improved.

[0064] <Effects of the above-described embodiments> Next, examples of effects produced by the above-described embodiments are shown. In the following description, the effects are described based on the specific configurations shown as examples in the above-described embodiments, but may be replaced with other specific configurations shown as examples in this specification as long as the same effects are produced. In other words, for convenience, only one of the corresponding specific configurations may be described as a representative below, but the representatively described specific configuration may be replaced with another corresponding specific configuration.

[0065] Furthermore, the replacement may be made across a number of embodiments, that is, configurations shown as examples in different embodiments may be combined to produce the same effect.

[0066] According to the embodiment described above, the semiconductor manufacturing apparatus for performing wire bonding to form an electric circuit of a semiconductor device includes a capillary 2 capable of extending a metal wire 3, a US horn 1 for vibrating the capillary 2, a fixing portion for fixing the semiconductor device, and a heating portion for heating only a part of the semiconductor device when the tip of the molten metal wire 3 is brought into contact with the semiconductor device fixed to the fixing portion. Here, the semiconductor device is, for example, an apparatus including a semiconductor element 6 and a lead frame 8. The fixing portion corresponds to, for example, a suction hole 11, and the heating portion corresponds to, for example, a heater plate jig 9.

[0067] According to this configuration, when joining the metal wire 3 to the semiconductor device, only a part of the semiconductor device can be heated, so that it is possible to suppress the performance degradation of the semiconductor device due to the joining of the metal wire 3. Specifically, it is possible to suppress the deterioration (oxidation) of the copper lead frame 8 due to heating, and suppress the performance degradation of the semiconductor device (for example, poor adhesion of the insulating sheet). As a result, it is possible to improve the productivity of the semiconductor device and increase the profit rate.

[0068] Furthermore, the same effect can be achieved even if other configurations, examples of which are shown in this specification, are appropriately added to the above configuration, i.e., even if other configurations in this specification that were not mentioned as the above configuration are appropriately added.

[0069] Furthermore, according to the embodiment described above, the heating unit has a protruding portion (heater plate jig 9) that can protrude according to the shape of the semiconductor device. The heater plate jig 9 heats only a part of the semiconductor device. With this configuration, only the heater plate jig 9, which has been raised (protruded) toward the lead frame 8 in advance according to the shape of the lead frame 8, can effectively heat only the portion of the semiconductor device that is to be wired for wire bonding.

[0070] Furthermore, according to the embodiment described above, in plan view, the position where the tip of the metal wire 3 contacts the semiconductor device is included in the range where the heater plate jig 9 is located. With such a configuration, the heater plate jig 9 is positioned so as to include the position where the tip of the metal wire 3 contacts the semiconductor device (e.g., the semiconductor element 6) in plan view, so that only the area to be wired by wire bonding can be effectively heated.

[0071] Moreover, according to the embodiment described above, the heating portion is the heater plate jig 9, and the fixing portion is the suction holes 11 formed in the heater plate jig 9. With such a configuration, the semiconductor device can be appropriately fixed by the suction holes 11 formed in the heater plate jig 9, thereby improving adhesion.

[0072] According to the embodiment described above, the semiconductor manufacturing apparatus includes the non-contact heat source 12 for heating the semiconductor device without contacting the semiconductor device. This configuration enables rapid heating, improving the manufacturability of the semiconductor device.

[0073] Moreover, according to the embodiment described above, the semiconductor device has a lead frame 8. The heater plate jig 9 locally heats the lead frame 8. With this configuration, deterioration (oxidation) of the copper lead frame 8 due to heating can be suppressed, and deterioration in the performance of the semiconductor device (for example, poor adhesion of the insulating sheet) can be suppressed. As a result, the productivity of the semiconductor device can be improved, and the profit margin can be increased.

[0074] According to the embodiment described above, in the semiconductor manufacturing method, the capillary 2 capable of extending the metal wire 3 is vibrated by the US horn 1. Then, the semiconductor device is fixed. Then, the tip of the molten metal wire 3 is brought into contact with the fixed semiconductor device to perform wire bonding. Then, only a part of the semiconductor device is heated when performing wire bonding.

[0075] According to this configuration, when joining the metal wire 3 to the semiconductor device, only a portion of the semiconductor device can be heated, thereby suppressing the deterioration of performance of the semiconductor device due to joining of the metal wire 3.

[0076] Unless otherwise specified, the order in which the processes are performed may be changed.

[0077] Furthermore, even if other configurations, examples of which are shown in this specification, are appropriately added to the above configuration, i.e., even if other configurations in this specification that were not mentioned as the above configuration are appropriately added, the same effect can be produced.

[0078] <Modifications of the above-described embodiments> In the multiple embodiments described above, the material, composition, dimensions, shape, relative positional relationship, or implementation conditions of each component may be described, but these are merely examples in all aspects and are not limiting.

[0079] Therefore, countless modifications and equivalents not shown as examples are assumed within the scope of the technology disclosed in the present specification, including, for example, modifying, adding, or omitting at least one component, and further, extracting at least one component in at least one embodiment and combining it with a component in another embodiment.

[0080] In addition, in at least one of the embodiments described above, when a material name or the like is stated without being specifically specified, it is understood that the material in question may include other additives, such as alloys, unless a contradiction arises.

[0081] Furthermore, unless a contradiction arises, when it is stated in the above-described embodiments that "one" component is provided, "one or more" of that component may be provided.

[0082] Furthermore, each component in the embodiments described above is a conceptual unit, and the scope of the technology disclosed in this specification includes cases where one component is made up of multiple structures, where one component corresponds to a part of a structure, and even where multiple components are provided in one structure.

[0083] Furthermore, each of the components in the embodiments described above includes structures having other structures or shapes as long as they perform the same function.

[0084] Furthermore, the descriptions in this specification are incorporated by reference for all purposes related to the present technology, and none of them are admitted to be prior art.

[0085] Various aspects of the present disclosure are summarized below as appendices.

[0086] (Appendix 1) A semiconductor manufacturing apparatus for performing wire bonding to form an electrical circuit of a semiconductor device, A capillary capable of extending a metal wire; A US horn for vibrating the capillary; a fixing portion for fixing the semiconductor device; a heating unit for heating only a part of the semiconductor device when the tip of the molten metal wire is brought into contact with the semiconductor device fixed to the fixing unit, Semiconductor manufacturing equipment.

[0087] (Appendix 2) 2. The semiconductor manufacturing apparatus according to claim 1, the heating section partially has a protruding section that can protrude in accordance with a shape of the semiconductor device, The protrusion heats only a portion of the semiconductor device. Semiconductor manufacturing equipment.

[0088] (Appendix 3) 3. The semiconductor manufacturing apparatus according to claim 2, a position where the tip of the metal wire contacts the semiconductor device is included in a range where the protrusion is located in a plan view; Semiconductor manufacturing equipment.

[0089] (Appendix 4) A semiconductor manufacturing apparatus according to any one of claims 1 to 3, The heating portion is a heater plate, The fixing portion is a suction hole formed in the heater plate. Semiconductor manufacturing equipment.

[0090] (Appendix 5) A semiconductor manufacturing apparatus according to any one of claims 1 to 4, a non-contact heat source for heating the semiconductor device without contacting the semiconductor device; Semiconductor manufacturing equipment.

[0091] (Appendix 6) A semiconductor manufacturing apparatus according to any one of claims 1 to 5, the semiconductor device has a lead frame, The heating unit locally heats the lead frame. Semiconductor manufacturing equipment.

[0092] (Appendix 7) A semiconductor manufacturing method for performing wire bonding to form an electrical circuit of a semiconductor device, A capillary capable of extending a metal wire is vibrated by a US horn. Fixing the semiconductor device; The wire bonding is performed by contacting the tip of the molten metal wire with the fixed semiconductor device; When performing the wire bonding, only a part of the semiconductor device is heated. Semiconductor manufacturing method. [Explanation of symbols]

[0093] Reference Signs List 1 US horn, 2 capillary, 3 metal wire, 4 FAB, 5 spark rod, 6 semiconductor element, 7 die bond bonding material, 8 lead frame, 9 heater plate jig, 10 heater plate jig, 11 suction hole, 12 non-contact heat source, 90 heater plate jig.

Claims

1. A semiconductor manufacturing apparatus for performing wire bonding to form an electrical circuit of a semiconductor device, A capillary capable of extending a metal wire; a US horn for vibrating the capillary; a fixing portion for fixing the semiconductor device; a heating unit for heating only a part of the semiconductor device when the tip of the molten metal wire is brought into contact with the semiconductor device fixed to the fixing unit, Semiconductor manufacturing equipment.

2. The semiconductor manufacturing apparatus according to claim 1, the heating section partially has a protruding section that can protrude in accordance with a shape of the semiconductor device, The protrusion heats only a portion of the semiconductor device. Semiconductor manufacturing equipment.

3. The semiconductor manufacturing apparatus according to claim 2, a position where the tip of the metal wire contacts the semiconductor device is included in a range where the protrusion is located in a plan view; Semiconductor manufacturing equipment.

4. A semiconductor manufacturing apparatus according to any one of claims 1 to 3, The heating portion is a heater plate, The fixing portion is a suction hole formed in the heater plate. Semiconductor manufacturing equipment.

5. A semiconductor manufacturing apparatus according to any one of claims 1 to 3, a non-contact heat source for heating the semiconductor device without contacting the semiconductor device; Semiconductor manufacturing equipment.

6. A semiconductor manufacturing apparatus according to any one of claims 1 to 3, the semiconductor device has a lead frame, The heating unit locally heats the lead frame. Semiconductor manufacturing equipment.

7. A semiconductor manufacturing method for performing wire bonding to form an electrical circuit of a semiconductor device, A capillary capable of extending a metal wire is vibrated by a US horn. Fixing the semiconductor device; The wire bonding is performed by contacting the tip of the molten metal wire with the fixed semiconductor device; When performing the wire bonding, only a part of the semiconductor device is heated. Semiconductor manufacturing method.

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