Device manufacturing method

Abstract

To provide a device manufacturing method capable of preferably dealing a work small piece by suppressing a problem on seizure even in the case of dealing the work small piece having a conventional large size.SOLUTION: A device manufacturing method comprises: a preparation step of preparing a lamination body formed by holding a work small piece onto a work handling sheet having a boundary ablation layer; an arrangement step of arranging the lamination body to an object that can receive the work small piece; and a separation step of separating the work small piece by generating a boundary ablation by emitting a laser beam, and mounting the work small piece onto the object. The loci of the laser beam is linear, and an interval between the loci is 30 μm or more and 130 μm or less, an area of a region surrounded by each loci positioned so as to be mostly separated from a center of a main surface of the work small piece is 5% or more and 40% or less of an area of the main surface.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a device manufacturing method using a work handling sheet that can be used to handle small workpieces such as semiconductor components and semiconductor devices.

Background Art

[0002] Semiconductor wafers such as silicon and gallium arsenide and various packages are manufactured in a large-diameter state. These are cut and separated (dicing) into element chips (semiconductor chips) and individually peeled off (picked up), and then transferred to the next process, the mounting process. At this time, the workpiece such as a semiconductor wafer is processed such as back grinding, dicing, washing, drying, expanding, picking up, and mounting while being adhered to a semiconductor processing sheet having a base material and an adhesive layer.

[0003] In the above-described picking-up and mounting processes, semiconductor chips on the semiconductor processing sheet are individually picked up using a suction collet and placed at predetermined positions. At this time, the semiconductor chips are also pushed up from the back surface of the semiconductor processing sheet using needles, or the semiconductor processing sheet is expanded to separate the semiconductor chips from each other.

[0004] By the way, in recent years, in the development of displays using micro light-emitting diodes, the use of laser light irradiation has been studied for arranging individual micro light-emitting diodes on a substrate. For example, in Patent Document 1, after a plurality of micro light-emitting diodes are held on a support via a predetermined layer, the layer is irradiated with laser light to cause ablation of the layer at the irradiated position, and thereby a method of placing the micro light-emitting diodes separated from the support (laser lift-off) on a wiring substrate has been studied. Since laser light is excellent in directivity and convergence, it is easy to control the irradiation position, and selective placement can be performed well.

Prior Art Documents

Patent Document

[0005]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0006] In the above-described laser lift-off method, when irradiating a laser having low-density energy, sufficient ablation cannot be caused, and the work piece cannot be satisfactorily separated from the support. In particular, when handling a work piece having a size such that one side reaches the order of mm, separation becomes very difficult when using low-density energy. On the other hand, when irradiating a laser having high-density energy, there is a problem that the support or the like is burned and a defect occurs.

[0007] The present invention has been made in view of such a situation, and an object thereof is to provide a device manufacturing method capable of suppressing the problem of burning and handling a work piece well even when handling a work piece having a relatively large size.

Means for Solving the Problems

[0008] In order to achieve the above object, first, the present invention provides a device manufacturing method including: a preparation step of preparing a laminate in which a plurality of work pieces are held on a surface on the interface ablation layer side in a work handling sheet including an interface ablation layer capable of holding a work piece and ablating at an interface by irradiation with laser light, and a base material laminated on one side of the interface ablation layer; an arrangement step of arranging the laminate so that the surface on the work piece side in the laminate faces an object capable of receiving the work piece; and a separation step of irradiating laser light to at least one position on the interface ablation layer in the laminate where the work piece is attached, causing interface ablation at the irradiated position in the interface ablation layer, separating the work piece existing at the position where the interface ablation has occurred from the work handling sheet, and placing the work piece on the object. In the separation step, the laser light irradiated to each of the work pieces has a linear locus, the interval between adjacent loci is 30 μm or more and 130 μm or less, and for each of the work pieces, the area of the region surrounded by the locus located farthest from the center of the main surface of the work piece is 5% or more and 40% or less of the area of the main surface. A device manufacturing method characterized by the above is provided (Invention 1).

[0009] In the device manufacturing method according to the above invention (Invention 1), in the separation step, by irradiating laser light under the above-described conditions, burning of the work handling sheet or the like can be suppressed, and the work piece can be separated well, and as a result, the device can be manufactured efficiently.

[0010] In the above invention (Invention 1), the interface ablation layer is composed of an active energy ray-curable adhesive. Between the placement step and the separation step, active energy rays are irradiated onto the entire interface ablation layer in the laminate, or onto at least one position in the interface ablation layer in the laminate where one of the work pieces is attached, so as to preferably include a curing step of curing the interface ablation layer globally or locally (Invention 2).

[0011] In the above invention (Inventions 1 and 2), it is preferable that the shape of the main surface of the work piece is a rectangle with the length of the shortest side being 1 mm or more (Invention 3).

[0012] In the above invention (Inventions 1 to 3), it is preferable that the locus of the laser beam is, at least in part, a plurality of straight lines arranged substantially in parallel (Invention 4).

[0013] In the above invention (Inventions 1 to 4), the irradiation in the separation step is preferably performed by irradiating a dot-shaped laser beam, and the locus is preferably composed of a plurality of dot-shaped irradiation marks generated by the irradiation (Invention 5).

[0014] In the above invention (Invention 5), it is preferable that the interval ds between adjacent irradiation marks is equal to or less than the diameter r of the irradiation mark (Invention 6).

[0015] In the above invention (Inventions 1 to 6), it is preferable that the interface ablation layer contains an active energy ray-curable component, a photoinitiator, and an ultraviolet absorber (Invention 7).

Advantages of the Invention

[0016] The device manufacturing method according to the present invention can handle work pieces well while suppressing the problem of sticking even when handling work pieces of a relatively large size.

Brief Description of the Drawings

[0017]

Figure 1

Figure 2

Figure 3

Embodiments for Carrying Out the Invention

[0018] Hereinafter, embodiments of the present invention will be described. The device manufacturing method according to this embodiment includes a preparation step, an arrangement step, and a separation step, which will be described below.

[0019] In the preparation step, a laminate in which a plurality of workpiece pieces are held on the surface on the interface ablation layer side of a workpiece handling sheet that can hold the workpiece pieces and includes an interface ablation layer that can be subjected to interface ablation by irradiation with laser light and a base material laminated on one side of the interface ablation layer is prepared.

[0020] In the arrangement step, the laminate is arranged so that the surface on the workpiece piece side in the laminate faces the object that can receive the workpiece pieces.

[0021] In the separation step, laser light is irradiated onto at least one position on the interface ablation layer in the laminate where the workpiece piece is attached, causing interface ablation at the irradiated position in the interface ablation layer, thereby separating the workpiece piece existing at the position where the interface ablation has occurred from the workpiece handling sheet and placing the workpiece piece on the object.

[0022] By irradiating the laser light as described above, as shown in FIG. 2(a), interfacial ablation can be caused at the irradiated position in the interfacial ablation layer 201 (in FIG. 2(a), the position where the locus 10 exists). Specifically, by irradiating the laser light, in the region proximal to the substrate 202 in the interfacial ablation layer 201, the components constituting the region evaporate or volatilize. Then, the gas generated by the evaporation or volatilization accumulates between the substrate 202 and the interfacial ablation layer 201, and a cavity (blister) is formed. Due to the formation of the blister, the interfacial ablation layer 201 is locally deformed. As a result, the area of contact between the interfacial ablation layer 201 and the work piece 100 decreases, and the work piece 100 separates so as to be peeled off from the interfacial ablation layer 201. As a result, the work piece 100 existing at the position where the interfacial ablation has occurred can be placed on the object. Since the irradiation of the laser light can be selectively performed with respect to the position of a predetermined work piece 100, it is possible to selectively separate the work piece 100 from the interfacial ablation layer 201.

[0023] In particular, the device manufacturing method according to the present embodiment satisfies the following conditions for the laser light irradiated on each of the work pieces.

[0024] That is, the locus of the laser light is linear. Also, the interval between adjacent loci is 30 μm or more and 130 μm or less. Further, for each of the work pieces, the area of the region surrounded by the locus that is farthest from the center of the main surface of the work piece is 5% or more and 40% or less of the area of the main surface.

[0025] As described above, by irradiating the laser beam so that the locus becomes linear and irradiating the laser beam so that the distance between the loci and the area of the region surrounded by the loci satisfy the above conditions, as shown in Fig. 2(a), local deformation of the interface ablation layer 201 can be efficiently caused, whereby the work piece 100 and the interface ablation layer 201 are well separated from the end portions.

[0026] Here, if the distance between the loci 10 and the region surrounded by the loci 10 are narrower than the above-described conditions, as shown in Fig. 2(b), the shape change of the interface ablation layer 201 that causes separation of the work piece 100 does not occur. In this case, the work piece 100 remains in contact with the interface ablation layer 201, and the work piece 100 cannot be separated well.

[0027] On the other hand, if the distance between the loci 10 and the region surrounded by the loci 10 are wider than the above-described conditions, as shown in Fig. 2(c), in most of the regions where the work piece 100 exists, the interface ablation layer 201 separates from the base material 202, and local shape change of the interface ablation layer 201 does not occur. As a result, the contact between the work piece 100 and the interface ablation layer 201 is mostly maintained, and the work piece 100 cannot be separated well.

[0028] In contrast, in the device manufacturing method according to the present embodiment, as described above, local deformation of the interface ablation layer 201 is effectively caused, and the work piece 100 can be separated well. In particular, since the irradiation of the laser beam does not require irradiation of a laser beam having an excessively high density of energy or excessive repeated irradiation of the laser beam, burning of the work handling sheet or the like can be suppressed.

[0029] 1. Locus Hereinafter, the locus of the irradiation of the laser beam in the above separation step will be described in detail.

[0030] (1) Linear Figure 1(a) is a diagram schematically showing the locus generated by the irradiation of laser light in the present embodiment. In particular, Figure 1(a) is a plan view of a work handling sheet 200 provided with a plurality of work pieces 100, as viewed from the side of the work handling sheet 200 at the position where one of the work pieces 100 exists.

[0031] As shown in Figure 1(a), the locus 10 generated by the irradiation of laser light is linear. In particular, the locus 10 shown in Figure 1(a) is such that a plurality of linear loci 10 are arranged parallel to each other.

[0032] The locus 10 generated by the irradiation of laser light in the present embodiment is not limited to being linear as shown in Figure 1(a), and may be curved. When it is curved, its shape may be a circle (a perfect circle or an ellipse) or a part of the circle, or may be spiral. Furthermore, the locus 10 may be a mixture of straight lines and curves, or may be mixed with dot-like loci together with the linear locus 10.

[0033] In the device manufacturing method according to the present embodiment, the interval between the loci 10 satisfies the above-described conditions, but this is based on the premise that the loci 10 are adjacent to each other. That is, when there are a plurality of loci 10, it means that they are in an arranged state. Also, when the locus 10 is spiral, inevitably, the inner part and the outer part of the locus 10 are in an adjacent state. When the locus 10 is a straight line, as shown in Figure 1(a), it is preferable that a plurality of loci 10 are arranged substantially parallel. Also, when the locus 10 is a circle or a part of it, it is preferable that they are arranged concentrically.

[0034] Note that the locus 10 in this embodiment does not refer to the locus when irradiating the laser beam (the locus traced by the laser beam), but refers to the locus constituted by the marks (irradiation marks) generated by the irradiation after the irradiation of the laser beam is completed. Therefore, for example, when irradiating a dot-shaped (spot-shaped) laser beam, even if the individual irradiation marks 1 generated thereby constitute a linear locus 10 (for example, the case shown in FIG. 1(b)), it corresponds to the linear locus 10 in this embodiment.

[0035] (2) Spacing between Loci As described above, in the locus 10 of this embodiment, the spacing between adjacent loci (the distance indicated by "dl" in FIG. 1(b)) is 30 μm or more and 130 μm or less. Here, the spacing dl refers to the distance from the end of the locus 10 (irradiation mark 1) to the end of the adjacent locus 10, as shown in FIG. 1(b).

[0036] By irradiating the laser beam so that the spacing dl is within the above range, local changes in the interface ablation layer 201 can be effectively caused, and as a result, good separation of the work piece 100 becomes possible. From this viewpoint, the spacing dl is preferably 70 μm or more, particularly preferably 50 μm or more. Also, the spacing dl is preferably 125 μm or less, particularly preferably 100 μm or less.

[0037] (3) Area of the Region Enclosed by the Loci As described above, in the locus 10 in this embodiment, for each of the work pieces 100, the area of the region (the region indicated by "A" in FIG. 1(a)) enclosed by the locus 10 that is farthest from the center of the main surface of the work piece 100 is 5% or more and 40% or less of the area of the main surface. Here, since the region A is enclosed by the locus 10 that is farthest from the center, it includes the portion where there is no locus 10 between the locus 10 and the locus 10.

[0038] By irradiating the laser light so that the region A satisfies the above conditions, local changes in the interface ablation layer 201 can be effectively caused, and as a result, good separation of the workpiece piece 100 becomes possible. From this viewpoint, the ratio of the above area is preferably 10% or more, particularly preferably 20% or more. Further, the above ratio is preferably 33% or less, particularly preferably 27% or less.

[0039] In addition, in the device manufacturing method according to the present embodiment, it is preferable to irradiate the laser light so that the region A does not deviate to any position on the main surface of the workpiece piece. In particular, it is preferable to irradiate the region A so as to include the center of the main surface of the workpiece piece. Especially, it is preferable to irradiate so that the center of the region A overlaps with the center of the main surface of the workpiece piece.

[0040] (4) Irradiation with dot-shaped (spot-shaped) laser light As described above, in the device manufacturing method according to the present embodiment, irradiation with dot-shaped (spot-shaped) laser light may be performed during the separation process. In that case, as shown in Fig. 1(b), the dot-shaped (small circular) irradiation mark 1 generated by the irradiation constitutes the locus 10.

[0041] Here, the diameter of the above-described dot-shaped irradiation mark 1 (the distance indicated by "r" in Fig. 1(b)) is preferably 0.1 μm or more, particularly preferably 1 μm or more, and further preferably 5 μm or more. By being in this range, it becomes easier to cause good interface ablation. Further, the above diameter r is preferably 480 μm or less, particularly preferably 240 μm or less, and further preferably 120 μm or less. By being in this range, it becomes easier to cause good interface ablation and it becomes easier to suppress burning on the workpiece handling sheet 200 or the like.

[0042] From the viewpoint of facilitating the occurrence of favorable interface ablation, the distance between adjacent irradiation marks 1 (the distance indicated by "ds" in Fig. 1(b)) is preferably equal to or less than the diameter r of the irradiation mark 1. In particular, the distance ds between adjacent irradiation marks 1 is preferably equal to or less than half of the diameter r of the irradiation mark 1. More preferably, the distance ds between adjacent irradiation marks 1 is 0 (i.e., the irradiation marks 1 partially overlap). Note that the distance ds here refers to the distance from the end of one irradiation mark 1 to the end of the adjacent irradiation mark 1, as shown in Fig. 1(b).

[0043] Also, the distance ds between adjacent dot-like irradiation marks 1 is preferably 20 μm or less, particularly preferably 10 μm or less, and even more preferably 0 μm or less. By being within this range, it becomes easier to cause favorable interface ablation and to suppress burning on the work handling sheet 200 or the like.

[0044] When performing dot-like laser beam irradiation, if the irradiation marks 1 form a linear locus 10, the irradiation order is not particularly limited. Fig. 3 is a diagram schematically showing the irradiation order of dot-like laser beams. In Figs. 3(a) to (d), each circle enclosing a number represents one irradiation mark 1, and the number means the irradiation order. For example, in Fig. 3(a), after forming the first locus 10 by linearly irradiating in order from the 1st to the 5th, the second locus 10 is formed by linearly irradiating in order from the 6th to the 10th adjacent to the first locus 10. All the examples shown in Figs. 3(a) to (d) can be adopted in the device manufacturing method according to this embodiment. However, the method is not limited to these examples, and any irradiation that results in a linear locus 10 can be adopted in the device manufacturing method according to this embodiment.

[0045] 2. Preparation step In the preparation process, as described above, a laminate in which a plurality of workpiece pieces 100 are held on a workpiece handling sheet 200 is prepared. The workpiece handling sheet 200 is capable of holding the workpiece pieces 100 and includes an interfacial ablation layer 201 that undergoes interfacial ablation upon irradiation with laser light, and a base material 202 laminated on one side of the interfacial ablation layer 201.

[0046] In the workpiece handling sheet 200 according to the present embodiment, the interfacial ablation layer 201 is capable of holding the workpiece pieces. That is, the workpiece handling sheet 200 according to the present embodiment can hold the workpiece pieces laminated on the surface of the interfacial ablation layer 201 opposite to the base material 202 in that state.

[0047] Although the specific mode of the above holding is not limited, a preferable example is that the interfacial ablation layer 201 holds the workpiece pieces by exerting adhesiveness to the workpiece pieces. In this case, as described later, the interfacial ablation layer 201 preferably contains an adhesive as one of the components constituting it, that is, it is an adhesive layer.

[0048] Further, the interfacial ablation layer 201 in the present embodiment undergoes interfacial ablation upon irradiation with laser light. That is, the interfacial ablation layer 201 undergoes local interfacial ablation in the region irradiated with the laser light. The laser light is not particularly limited as long as it can cause interfacial ablation, and may be laser light having any wavelength in the ultraviolet region, visible light region, and infrared region. Among them, laser light having a wavelength in the ultraviolet region is preferable.

[0049] In this specification, interface ablation means that a part of the components constituting the interface ablation layer 201 evaporates or volatilizes due to the energy of the laser beam, and the gas generated thereby accumulates at the interface between the interface ablation layer 201 and the base material 202 to form voids (blisters). In this case, the shape of the interface ablation layer 201 changes due to the blisters, and the workpiece piece peels off from the interface ablation layer 201, resulting in the separation of the workpiece piece.

[0050] (1) Interface ablation layer The specific configuration and composition of the interface ablation layer 201 in this embodiment are not particularly limited as long as it can hold the workpiece piece and has the property of undergoing interface ablation upon irradiation with the laser beam. From the viewpoint of easily and favorably exhibiting the property of being able to hold the workpiece piece, as described above, it is preferable that the interface ablation layer 201 contains an adhesive as one of its constituent components.

[0051] The adhesive is not particularly limited as long as it can exert sufficient holding power (adhesive force) on the adherend such as the workpiece piece 100. Examples of the adhesive include acrylic adhesives, rubber adhesives, silicone adhesives, urethane adhesives, polyester adhesives, polyvinyl ether adhesives, and the like. Among these, from the viewpoint of easily exerting the desired adhesive force, it is preferable to use an acrylic adhesive.

[0052] Further, the interface ablation layer 201 preferably contains an active energy ray curable component. By the interface ablation layer 201 containing the component, the interface ablation layer 201 can be cured by irradiation with active energy rays, thereby reducing the adhesion between the work handling sheet 200 and the work piece 100 according to the present embodiment. Therefore, before the above-described interface ablation occurs, or simultaneously with the above-described interface ablation, by reducing the adhesion by irradiation with active energy rays, it becomes possible to surely separate the work piece 100 from the work handling sheet 200 according to the present embodiment. Further, it becomes possible to further reduce the irradiation amount of the laser beam required to cause sufficient separation of the work pieces. Furthermore, in the work handling sheet 200 in the present embodiment, since the adhesion to the work piece is reduced by irradiation with active energy rays, it is also possible to set the adhesion before irradiation with active energy rays to be high. Thereby, when transferring the work piece from another sheet or the like to the work handling sheet 200 in the present embodiment, it is possible to prevent the remaining of the work piece on the other sheet or the like and perform good transfer.

[0053] In particular, when the interface ablation layer 201 is composed of an adhesive, the interface ablation layer 201 preferably contains, as an active energy ray curable component, an adhesive having active energy ray curability (hereinafter sometimes referred to as "active energy ray curable adhesive").

[0054] As the active energy ray curable pressure-sensitive adhesive, it may be mainly composed of a polymer having active energy ray curability, or may be mainly composed of a mixture of an active energy ray non-curable polymer (a polymer having no active energy ray curability) and at least one monomer and / or oligomer having an active energy ray curable group. Further, the active energy ray curable pressure-sensitive adhesive may be a mixture of a polymer having active energy ray curability and at least one monomer and / or oligomer having an active energy ray curable group.

[0055] The polymer having active energy ray curability is preferably a (meth)acrylic acid ester polymer (hereinafter sometimes referred to as "active energy ray curable polymer") into which a functional group having active energy ray curability (active energy ray curable group) is introduced into the side chain. This active energy ray curable polymer is preferably obtained by reacting an acrylic polymer having a functional group-containing monomer unit with an unsaturated group-containing compound having a functional group that binds to the functional group. In this specification, (meth)acrylic acid means both acrylic acid and methacrylic acid. The same applies to other similar terms. Further, the concept of "copolymer" is also included in "polymer".

[0056] The acrylic polymer having the above-described functional group-containing monomer unit may be obtained by polymerizing other monomers together with the functional group-containing monomer. As such a functional group-containing monomer, other monomers, and the above-described unsaturated group-containing compound, known ones can be used. For example, those disclosed in International Publication No. 2018 / 084021 can be used.

[0057] The weight average molecular weight of the above active energy ray curable polymer is preferably 10,000 or more, particularly preferably 150,000 or more, and more preferably 200,000 or more. Further, the weight average molecular weight is preferably 1,500,000 or less, particularly preferably 1,000,000 or less. The weight average molecular weight (Mw) in this specification is a value in terms of standard polystyrene measured by gel permeation chromatography (GPC method).

[0058] As the above-mentioned active energy ray non-curable polymer component, for example, the above-mentioned (meth)acrylate polymer before reacting an unsaturated group-containing compound can be used.

[0059] The weight average molecular weight of the (meth)acrylate polymer as the above-mentioned active energy ray non-curable polymer component is preferably 10,000 or more, particularly preferably 150,000 or more, and more preferably 200,000 or more. Further, the weight average molecular weight is preferably 1,500,000 or less, particularly preferably 1,000,000 or less.

[0060] Further, as the above-mentioned monomer and / or oligomer having at least one or more active energy ray curable groups, for example, esters of polyhydric alcohols and (meth)acrylic acid can be used.

[0061] When ultraviolet rays are used as the active energy rays for curing the active energy ray curable adhesive, it is preferable to add a photopolymerization initiator to the adhesive. By the interface ablation layer 201 in this embodiment containing a photopolymerization initiator, particularly when ultraviolet rays are used as the active energy rays, it is possible to effectively cure the interface ablation layer 201 while reducing the polymerization curing time and the light irradiation amount of the interface ablation layer 201.

[0062] The above-mentioned photoinitiator is not particularly limited. For example, benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin - n - butyl ether, benzoin isobutyl ether, acetophenone, dimethylaminoacetophenone, 2,2 - dimethoxy - 1,2 - diphenylethane - 1 - one, 2,2 - diethoxy - 2 - phenylacetophenone, 2 - hydroxy - 2 - methyl - 1 - phenylpropan - 1 - one, 1 - hydroxycyclohexyl phenyl ketone, 2 - methyl - 1 - [4 - (methylthio)phenyl] - 2 - morpholino - propan - 1 - one, 4 - (2 - hydroxyethoxy)phenyl - 2 - (hydroxy - 2 - propyl)ketone, 2 - dimethylamino - 2 - (4 - methylbenzyl) - 1 - (4 - morpholino - phenyl)butan - 1 - one, 1 - [4 - (2 - hydroxyethoxy) - phenyl] - 2 - hydroxy - methylpropanone, ethanone, 1 - [9 - ethyl - 6 - (2 - methylbenzoyl) - 9H - carbazol - 3 - yl] -, 1 - (0 - acetyloxime), benzophenone, p - phenylbenzophenone, 4,4’ - diethylaminobenzophenone, dichlorobenzophenone, 2 - methylanthraquinone, 2 - ethylanthraquinone, 2 - tertiary - butylanthraquinone, 2 - aminoanthraquinone, 2 - methylthioxanthone, 2 - ethylthioxanthone, 2 - chlorothioxanthone, 2,4 - dimethylthioxanthone, 2,4 - diethylthioxanthone, benzyl dimethyl ketal, acetophenone dimethyl ketal, p - dimethylaminobenzoic acid ester, oligo[2 - hydroxy - 2 - methyl - 1[4 - (1 - methylvinyl)phenyl]propanone], 2 - benzyl - 2 - (dimethylamino) - 4’ - morpholinobutyrophenone, bis(2,4,6 - trimethylbenzoyl) - phenylphosphine oxide, 2,4,6 - trimethylbenzoyl - diphenyl - phosphine oxide, etc. can be mentioned. These may be used alone or in combination of two or more.

[0063] Among the above-mentioned photoinitiators, it is preferable to use at least one of 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholino-phenyl)butan-1-one, ethanone, 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]-, 1-(0-acetoxyoxime), 2-benzyl-2-(dimethylamino)-4'-morpholinobutyrophenone, bis(2,4,6-trimethylbenzoyl)-phenylphosphine oxide, 2,4,6-trimethylbenzoyl-diphenyl-phosphine oxide, and 2,2-dimethoxy-1,2-diphenylethane-1-one.

[0064] The content of the photoinitiator in the interfacial ablation 201 is preferably 0.1 part by mass or more, particularly preferably 0.3 part by mass or more, and more preferably 0.5 part by mass or more with respect to 100 parts by mass of the active energy ray curable component. Also, the above content is preferably 20 parts by mass or less, particularly preferably 15 parts by mass or less, and more preferably 10 parts by mass or less with respect to 100 parts by mass of the active energy ray curable component. When the content of the photoinitiator is within the above range, it becomes easier to effectively cure the interfacial ablation layer 201.

[0065] In addition, it is also preferable that the interfacial ablation layer 201 in the present embodiment contains an ultraviolet absorber. The presence of the ultraviolet absorber in the interfacial ablation layer 201 improves the efficiency with which the interfacial ablation layer 201 receives energy from the laser light. Thereby, interfacial ablation occurs effectively, and it becomes possible to satisfactorily separate the held work pieces from the interfacial ablation layer 201. In particular, the irradiation amount of the laser light required to cause sufficient separation of the work pieces is reduced, the operating cost of the laser light irradiation device can be reduced, it becomes easier to satisfactorily separate only the target work pieces and the accuracy is improved, and furthermore, damage to the device and work pieces due to excessive laser light irradiation can be prevented.

[0066] The type of the ultraviolet absorber in the present embodiment is not particularly limited. The ultraviolet absorber in the present embodiment may be an organic compound or an inorganic compound, but is preferably an organic compound from the viewpoint of easily causing good interface ablation.

[0067] When the ultraviolet absorber is an organic compound, preferable examples of the ultraviolet absorber include compounds such as hydroxyphenyltriazine-based ultraviolet absorbers, benzophenone-based ultraviolet absorbers, benzotriazole-based ultraviolet absorbers, benzoate-based ultraviolet absorbers, benzoxazinone-based ultraviolet absorbers, phenyl salicylate-based ultraviolet absorbers, cyanoacrylate-based ultraviolet absorbers, nickel complex salt-based ultraviolet absorbers, hydroquinone-based ultraviolet absorbers, salicylic acid-based ultraviolet absorbers, malonic ester-based ultraviolet absorbers, and oxalic acid-based ultraviolet absorbers. These may be used alone or in combination of two or more.

[0068] Among the above-mentioned ultraviolet absorbers, from the viewpoints of having good absorbability at the third harmonic (355 nm) of YAG and easily causing good interface ablation, it is preferable to use at least one of hydroxyphenyltriazine-based ultraviolet absorbers, benzophenone-based ultraviolet absorbers, and benzotriazole-based ultraviolet absorbers, and particularly preferably to use a hydroxyphenyltriazine-based ultraviolet absorber.

[0069] Further, the ultraviolet absorber in the present embodiment preferably has an absorbance of light with a wavelength of 355 nm of 0.5 or more, particularly preferably 1.0 or more, more preferably 1.2 or more, and particularly preferably more than 2.0. Thereby, it becomes easy to cause good interface ablation. The upper limit value of the absorbance is not particularly limited and may be, for example, 4.0 or less.

[0070] In the present embodiment, the content of the ultraviolet absorber in the interfacial ablation layer 201 is preferably 1% by mass or more, more preferably 2% by mass or more, particularly preferably 3% by mass or more, and still more preferably 5% by mass or more. When the content of the ultraviolet absorber is 1% by mass or more, the interfacial ablation layer 201 can efficiently absorb the laser light, and thus it becomes easy to perform good interfacial ablation. Also, in the present embodiment, the content of the ultraviolet absorber in the interfacial ablation layer 201 is preferably 75% by mass or less, more preferably 60% by mass or less, particularly preferably 50% by mass or less, and still more preferably 20% by mass or less. When the content of the ultraviolet absorber is 75% by mass or less, the viscosity of the material for forming the interfacial ablation layer 201 becomes appropriate, and it becomes easy to ensure good film-forming properties.

[0071] Also, the active energy ray curable pressure-sensitive adhesive constituting the interfacial ablation layer 201 in the present embodiment may contain a crosslinking agent or the like in addition to the above-described components.

[0072] In the present embodiment, the thickness of the interfacial ablation layer 201 is preferably 3 μm or more, particularly preferably 20 μm or more, and still more preferably 25 μm or more. Also, the thickness of the interfacial ablation layer 201 is preferably 100 μm or less, particularly preferably 60 μm or less, and still more preferably 50 μm or less. When the thickness of the interfacial ablation layer 201 is within the above range, it becomes easy to achieve both the holding of the work piece 100 on the interfacial ablation layer 201 and the separation of the work piece 100 by interfacial ablation.

[0073] (2) Substrate The base material 202 in this embodiment is not particularly limited with respect to its composition and physical properties. From the viewpoint that the work handling sheet 200 can easily exhibit desired functions, the base material 202 is preferably composed of a resin. When the base material 202 is composed of a resin, examples of the resin include polyester resins such as polyethylene terephthalate, polybutylene terephthalate, and polyethylene naphthalate; polyolefin resins such as polyethylene, polypropylene, polybutene, polybutadiene, polymethylpentene, ethylene-norbornene copolymer, and norbornene resin; ethylene-vinyl acetate copolymer; ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid methyl copolymer, and other ethylene-(meth)acrylic acid ester copolymers; ethylene-based copolymer resins; polyvinyl chloride resins such as polyvinyl chloride and vinyl chloride copolymer; (meth)acrylic acid ester copolymer; polyurethane; polyimide; polystyrene; polycarbonate; fluororesin, and the like. Further, the resin constituting the base material 12 may be a cross-linked product of the above-described resin or a modified product such as an ionomer of the above-described resin. Further, the base material 202 may be a single-layer film made of the above-described resin, or may be a laminated film formed by laminating a plurality of the films. In this laminated film, the materials constituting each layer may be the same or different.

[0074] On the surface of the base material 202 in this embodiment, surface treatment such as an oxidation method or a roughening method, or primer treatment may be performed for the purpose of improving the adhesion to the interface ablation layer 201. Examples of the oxidation method include corona discharge treatment, plasma discharge treatment, chromium oxidation treatment (wet), flame treatment, hot air treatment, ozone, ultraviolet irradiation treatment, and the like. Examples of the roughening method include sandblasting method, thermal spraying treatment method, and the like.

[0075] The base material 202 in the present embodiment may contain various additives such as a colorant, a flame retardant, a plasticizer, an antistatic agent, a lubricant, and a filler. Further, when the interface ablation layer 201 contains a material that is cured by an active energy ray, it is preferable that the base material 202 has permeability to the active energy ray.

[0076] The manufacturing method of the base material 202 in the present embodiment is not particularly limited as long as the base material 202 is manufactured from a resin. For example, it can be manufactured by forming a resin into a sheet shape by a melt extrusion method such as a T-die method or a round-die method; a calender method; a solution method such as a dry method or a wet method.

[0077] The thickness of the base material 202 in the present embodiment is preferably 10 μm or more, particularly preferably 30 μm or more, and even more preferably 50 μm or more. Further, the thickness of the base material 202 is preferably 500 μm or less, more preferably 300 μm or less, particularly preferably 200 μm or less, even more preferably 150 μm or less, and most preferably 100 μm or less. When the thickness of the base material 202 is within the above range, the work handling sheet 200 has a predetermined balance between rigidity and flexibility, and it becomes easy to perform good handling of the work pieces.

[0078] (3) Work pieces In the preparation step in the present embodiment, a laminate in which a plurality of work pieces 100 are held on the surface of the work handling sheet 200 on the interface ablation layer 201 side is prepared.

[0079] The above laminate may be prepared by laminating pre - fragmented work pieces 100 on a work handling sheet 200, or by laminating a work (the material for the work pieces) on the interface ablation layer 201 of the work handling sheet 200 and then fragmenting the work into a plurality of work pieces 100. That is, the work pieces 100 may be obtained by dicing the work on the work handling sheet 200.

[0080] The shape and size of the work pieces 100 in this embodiment are not particularly limited. For example, the planar shape of the work pieces 100 may be a regular shape such as a rectangle or a circle, or may be an irregular shape.

[0081] As for the dimensions of the work pieces 100, when the work pieces 100 are rectangular, the minimum side thereof is preferably 0.3 mm or more, particularly preferably 1 mm or more, and even more preferably 1.5 mm or more. Also, the minimum side is preferably 50 mm or less, particularly preferably 20 mm or less, and even more preferably 10 mm or less.

[0082] Specific examples of the work pieces 100 include semiconductor components and semiconductor devices, and more specifically, memory, image sensors, power devices, MEMS (Micro Electro Mechanical Systems), CPU (Central Processing Unit), GPU (Graphics Processing Unit), etc.

[0083] 3. Placement process In the placement process, as described above, the laminate is placed so that the surface of the laminate on the side of the work pieces 100 faces the object capable of receiving the work pieces 100. This placement can be performed using a known device or the like.

[0084] As the object, although it is appropriately determined according to the device to be manufactured, when the work piece 100 is a light emitting diode, specific examples of the object include a substrate, a sheet, a reel, etc., and a wiring substrate provided with wiring is particularly preferably used.

[0085] 4. Curing step In the device manufacturing method according to the present embodiment, a curing step can be arbitrarily provided between the above-described arranging step and the separating step described later. In particular, the curing step is suitable when the interface ablation layer 201 contains the above-described active energy ray curable component.

[0086] In the curing step, the interface ablation layer 201 is cured entirely or locally by irradiating the entire interface ablation layer 201 in the above-described laminate, or the position in the interface ablation layer 201 in the above-described laminate where at least one work piece 100 is attached, with active energy rays.

[0087] When the interface ablation layer 201 contains the above-described active energy ray curable component, as described above, the interface ablation layer 201 can be cured entirely or partially by irradiating with active energy rays. Thereby, the adhesion of the cured interface ablation layer 201 to the work piece 100 is reduced, and it becomes possible to more surely separate the work piece 100.

[0088] As the above-described active energy rays, for example, those having energy quanta among electromagnetic waves or charged particle beams can be used, and specifically, ultraviolet rays, electron beams, etc. can be used. In particular, ultraviolet rays that are easy to handle are preferable.

[0089] When using ultraviolet rays, the irradiation amount is preferably such that the light amount is 10 mJ / cm 2 or more, more preferably 35 mJ / cm 2 or more, particularly preferably 95 mJ / cm 2 or more, and further preferably 190 mJ / cm2 It is preferably the above. When the light quantity is within this range, combined with the action of the subsequent interfacial ablation, it becomes easier to favorably separate the workpiece piece 100. Note that the upper limit value of the light quantity is not particularly limited. For example, 10000 mJ / cm 2 It is preferably below, particularly 5000 mJ / cm 2 It is preferably below, and more preferably 2000 mJ / cm 2 It is preferably below. Also, the illuminance is preferably 1 mW / cm 2 or more and 1000 mW / cm 2 or less.

[0090] Irradiation with active energy rays in the curing step can be performed using known methods. For example, an ultraviolet irradiation device equipped with a high-pressure mercury lamp or an ultraviolet LED as a light source, or a laser light irradiation device also used in the separation step described later can be used.

[0091] 5. Separation step In the separation step, laser light is irradiated onto at least one position on the interfacial ablation layer 201 in the laminate described above where the workpiece piece 100 is attached, to cause interfacial ablation at the irradiated position in the interfacial ablation layer 201. By doing so, the workpiece piece 100 existing at the position where the interfacial ablation has occurred is separated from the workpiece handling sheet 200, and the workpiece piece 100 is placed on the object.

[0092] The above irradiation is not particularly limited as long as it satisfies the conditions of the irradiation described above, and can be performed using a known laser light irradiation device. Note that from the viewpoint of being likely to suppress burning of the workpiece handling sheet 200 or the like, it is preferable that the irradiation is not performed again on the position that has been irradiated once.

[0093] Also, when performing the above irradiation, it may be performed in a state where a laminate composed of the work handling sheet 200 and the work piece 100 is laminated on a support such as glass, or it may be performed without laminating on the support. In the latter case, it is preferable from the viewpoint of reducing the number of steps. When not laminating on the support, for example, irradiation may be performed while supporting only the end portion of the laminate, or irradiation may be performed with the laminate placed on an object.

[0094] When performing the above irradiation as dot-shaped (spot-shaped) irradiation as described above, the energy of one irradiation is preferably 20 μJ or more, particularly preferably 30 μJ or more, and even more preferably 40 μJ or more. This makes it easier to efficiently generate interfacial ablation. Note that the upper limit value of the above energy is preferably 100 μJ or less, particularly preferably 75 μJ or less, and even more preferably 50 μJ or less. This makes it easier to suppress burning of the work handling sheet 200 and the like.

[0095] In addition, when performing both the irradiation of the active energy ray in the curing step and the irradiation of the laser beam in the separation step using the above-described laser beam irradiation device, the curing step and the separation step may be performed simultaneously. That is, the irradiation of the laser beam in the separation step may be performed so as to also serve as the irradiation of the active energy ray in the curing step, and local curing of the interfacial ablation layer 201 and interfacial ablation may be performed simultaneously.

[0096] 6. Other Processes The device manufacturing method according to the present embodiment may include processes other than the above-described preparation process, arrangement process, curing process, and separation process. For example, at an arbitrary timing between the preparation process and the separation process, grinding, die bonding, wire bonding, molding, inspection, transfer process, etc. may be performed.

[0097] 7. Device According to the device manufacturing method according to this embodiment, various devices can be manufactured by appropriately selecting the workpiece piece 100 and the object to be used. For example, when selecting the semiconductor component or the like described above as the workpiece piece 100, an electronic component or the like including the semiconductor component can be manufactured as a device.

[0098] The embodiments described above are described to facilitate the understanding of the present invention and are not described to limit the present invention. Therefore, each element disclosed in the above embodiments is intended to include all design changes and equivalents belonging to the technical scope of the present invention.

Example

[0099] Hereinafter, the present invention will be described more specifically by way of examples and the like, but the scope of the present invention is not limited to these examples and the like.

[0100] 〔Production Example 1〕(Production of Work Handling Sheet A) (1) Preparation of Adhesive Composition 80 parts by mass of 2-ethylhexyl acrylate and 20 parts by mass of 2-hydroxyethyl acrylate were polymerized by solution polymerization to obtain a (meth)acrylate polymer. To this (meth)acrylate polymer, 80 mol% of methacryloyloxyethyl isocyanate (MOI) with respect to 2-hydroxyethyl acrylate was reacted to obtain an acrylic polymer (active energy ray curable component) having an active energy ray curable group introduced into the side chain. When the weight average molecular weight (Mw) of this acrylic polymer was measured by the above-described method, it was 1,000,000.

[0101] 100 parts by mass of the acrylic polymer obtained above, in which an active energy ray-curable group is introduced into the side chain (in terms of solid content, the same shall apply hereinafter), 2.0 parts by mass of trimethylolpropane-modified tolylene diisocyanate (manufactured by Tosoh Corporation, trade name "Coronate L") as a crosslinking agent, 3.0 parts by mass of 2-dimethylamino-2-(4-methylbenzyl)-1-(4-morpholino-phenyl)butan-1-one (manufactured by IGM Resins, product name "Omnirad 379") as a photopolymerization initiator, and 10.0 parts by mass of tris[2,4,6-[2-{4-(octyl-2-methylethanoate)oxy-2-hydroxyphenyl}]-1,3,5-triazine (hydroxyphenyltriazine-based ultraviolet absorber, manufactured by BASF, product name "Tinuvin 477") as an ultraviolet absorber were mixed in a solvent to obtain a coating solution of the pressure-sensitive adhesive composition.

[0102] (2) Formation of the interfacial ablation layer (adhesive layer) The coating solution of the pressure-sensitive adhesive composition obtained in the above step (1) was applied to the release surface of a release sheet (manufactured by Lintec Corporation, product name "SP-PET381031") in which a silicone-based release agent layer was formed on one side of a polyethylene terephthalate film with a thickness of 38 μm, and the obtained coating film was dried by heating. As a result, a laminate was obtained in which an interfacial ablation layer with a thickness of 30 μm formed by drying the coating film and the release sheet were laminated.

[0103] (3) Production of the work handling sheet A work handling sheet A with the release sheet attached was obtained by bonding the surface on the interfacial ablation layer side of the laminate obtained in the above step (2) and one side of a polyethylene terephthalate film (manufactured by Mitsubishi Chemical Corporation, product name "T-910 WM19", thickness: 50 μm) as a base material.

[0104] Here, the weight average molecular weight (Mw) described above is the weight average molecular weight in terms of standard polystyrene measured under the following conditions (GPC measurement) using gel permeation chromatography (GPC). <Measurement conditions> · Measuring device: HLC-8320 manufactured by Tosoh Corporation · GPC column (passing in the following order): manufactured by Tosoh Corporation TSK gel superH-H TSK gel superHM-H TSK gel superH2000 · Measuring solvent: tetrahydrofuran · Measuring temperature: 40 °C

[0105] 〔Production Example 2〕(Production of Work Handling Sheet B) A work handling sheet B was obtained in the same manner as in Production Example 1, except that the interface ablation layer was formed to have a thickness of 45 μm.

[0106] 〔Production Example 3〕(Production of Work Handling Sheet C) A work handling sheet C was obtained in the same manner as in Production Example 1, except that the blending amount of the ultraviolet absorber in the pressure-sensitive adhesive composition was changed to 20.0 parts by mass.

[0107] 〔Example 1〕 (1) Preparation of chips on the work handling sheet (preparation step) The adhesive surface of a dicing sheet (manufactured by Lintec Corporation, product name "D-485H") was attached to one side of a silicon wafer (#2000, thickness: 24 μm). Subsequently, a dicing ring frame was attached to the peripheral edge of the adhesive surface of the dicing sheet (a position not overlapping with the silicon wafer). Further, the dicing sheet was cut according to the outer diameter of the ring frame. Thereafter, using a dicing device (manufactured by DISCO Corporation, product name "DFD6362"), the silicon wafer was diced into chips having a size of 3 mm × 3 mm (3 mm□).

[0108] Subsequently, the release sheet was peeled off from the work handling sheet A manufactured in Production Example 1, and the exposed surface thus exposed was bonded to the surface on which a plurality of chips in the laminate obtained as described above were present. Thereafter, the dicing sheet was peeled off from the plurality of chips. As a result, the plurality of chips were transferred from the dicing sheet to the work handling sheet A, and a laminate in which a plurality of chips were provided on the work handling sheet A was obtained.

[0109] (2) Arrangement of laminate (arrangement step) Subsequently, with respect to the support plate placed horizontally, the laminate obtained as described above was arranged such that the surface on the chip side faced each other. At this time, the laminate and the support were arranged to be parallel, and a slight gap was formed between them.

[0110] (3) Irradiation with active energy rays (curing step) Thereafter, using an ultraviolet irradiation device (manufactured by Rintec Co., Ltd., product name "RAD-2000") equipped with a high-pressure mercury lamp as a light source, the surface on the work handling sheet A side of the above-described laminate was irradiated with ultraviolet rays (irradiance: 230 mW / cm 2 , light quantity: 380 mJ / cm 2 ). By doing so, the interfacial ablation layer in the work handling sheet A was cured as a whole.

[0111] (4) Separation of chips by laser light irradiation (separation step) Finally, using a laser light irradiation device (YAG third harmonic (wavelength 355 nm) and pulse width 20 ns, light quantity 700 mJ / cm 2 ), the chips were irradiated with laser light through the work handling sheet. The irradiation conditions were frequency: 40 kHz, irradiation amount: 50 μJ / shot.

[0112] At this time, the irradiation was performed as shown in FIGS. 1(a) and 1(b) by sequentially irradiating dot-shaped laser light so that the trajectories thereof became a plurality of lines parallel to each other. Further, the irradiation was performed so that the region composed of the plurality of linear trajectories was located at the center of the chip. As shown in FIG. 4(a), the order of irradiation of the dot-shaped laser light was to start from one end of one trajectory and irradiate in order toward the other end, and then, for adjacent trajectories, also start from one end on the same side and irradiate in order toward the other end, and this was repeated. Such an irradiation pattern was designated as "Irradiation Pattern 1".

[0113] Moreover, when measuring the diameter r of one irradiation mark generated by the irradiation, it was 20 μm. Further, when measuring the interval dl between the trajectories (the interval between one line and the adjacent line), it was 55 μm. Further, when measuring the interval ds between adjacent irradiation marks within one trajectory (the interval between one irradiation mark and the adjacent irradiation mark), it was 5 μm.

[0114] Furthermore, the region surrounded by the trajectory located farthest from the center of the chip was rectangular (substantially square), and its size was 1 mm × 1 mm (1 mm□). And when calculating the ratio of the area of this region (1 mm 2 ) to the chip area (9 mm 2 ), it was 11.1%.

[0115] Note that the above-described irradiation was performed on 100 chips (a group of 10 chips in the vertical direction and 10 chips in the horizontal direction) selected from a plurality of chips.

[0116] [Examples 2 to 12 and Comparative Examples 1 to 4] Laser lift-off was performed in the same manner as in Example 1, except that the type of the work handling sheet, the size and thickness of the chip, the amount of ultraviolet light, the size of the irradiation region, the ratio of the irradiation area to the chip area, the interval between the trajectories, and the interval between adjacent irradiation marks were changed as shown in Table 1.

[0117] [Comparative Example 5] During the separation process, laser lift-off was performed in the same manner as in Example 1, except that the irradiation pattern was changed as follows. The irradiation pattern of this Comparative Example 5 was designated as "Irradiation Pattern 2".

[0118] That is, dot-like laser light was randomly irradiated at about 120 locations in a 1.5 mm × 1.5 mm (1.5 mm□) area at the center of the chip, similar to Irradiation Pattern 1. The area of this region (2.25 mm 2 ) was calculated as a ratio to the chip area (9 mm 2 ), and it was 25.0%. Also, when the interval ds between adjacent irradiation marks was measured, it was about 80 μm.

[0119] 〔Test Example 1〕(Evaluation of Laser Lift-off Suitability) Regarding the laser lift-off performed as Examples and Comparative Examples, the presence or absence of chip detachment from the work handling sheet was confirmed, and the laser lift-off suitability was evaluated based on the following criteria. The results are shown in Table 1. ○... The ratio of the number of chips that were successfully detached was 70% or more. ×... The ratio of the number of chips that were successfully detached was less than 70%.

[0120] 〔Test Example 2〕(Evaluation of Burn-in) Regarding the work handling sheets after laser lift-off performed as Examples and Comparative Examples, the presence or absence of burn-in was confirmed at a magnification of 50 times using a digital microscope (manufactured by Keyence Corporation, product name "VHX-7000"), and evaluation was performed based on the following criteria. The results are shown in Table 1. ○... There was no burn-in. ×... There was burn-in.

[0121]

Table 1

[0122] As can be seen from Table 1, in the laser lift-off according to the embodiment, it was found that no problems such as sticking of the work handling sheet occurred and good detachment occurred.

Industrial Applicability

[0123] The device manufacturing method of the present invention can be suitably used for manufacturing a display or the like including a micro light emitting diode as a pixel.

Explanation of Signs

[0124] 1… Irradiation mark 10… Trajectory 100… Work piece 200… Work handling sheet 201… Interface ablation layer 202… Substrate

Claims

1. A preparation step of preparing a laminate in which a plurality of work pieces are held on a surface on the interface ablation layer side in a work handling sheet including an interface ablation layer capable of holding a work piece and ablating at the interface by irradiation with laser light, and a base material laminated on one side of the interface ablation layer; An arrangement step of arranging the laminate so that the surface on the work piece side in the laminate faces an object capable of receiving the work piece; A separation step of irradiating laser light to at least one position on the interface ablation layer in the laminate where the work piece is attached, causing interface ablation at the irradiated position in the interface ablation layer, separating the work piece existing at the position where the interface ablation has occurred from the work handling sheet, and placing the work piece on the object; A device manufacturing method comprising the steps of: In the separation step, the laser light irradiated to each of the work pieces has a linear locus, the interval between adjacent loci is 30 μm or more and 130 μm or less, and for each of the work pieces, the area of the region surrounded by the locus located farthest from the center of the main surface of the work piece is 5% or more and 40% or less of the area of the main surface. A device manufacturing method characterized by the above.

2. The interface ablation layer is composed of an active energy ray curable adhesive, A curing step of curing the interface ablation layer globally or locally by irradiating active energy rays to the entire interface ablation layer in the laminate or at least one position on the interface ablation layer in the laminate where the work piece is attached, between the arrangement step and the separation step. The device manufacturing method according to claim 1, characterized by the above.

3. The device manufacturing method according to claim 1, characterized in that the shape of the main surface of the work piece is a rectangle having a minimum side length of 1 mm or more.

4. The device manufacturing method according to claim 1, characterized in that the locus of the laser light is a plurality of straight lines arranged substantially in parallel at least in part.

5. The irradiation in the separation step is performed by irradiating with a spot-shaped laser beam, and the locus is composed of a plurality of spot-shaped irradiation marks generated by the irradiation. The method for manufacturing a device according to claim 1, characterized in that.

6. The method for manufacturing a device according to claim 5, characterized in that the distance ds between adjacent irradiation marks is equal to or less than the diameter r of the irradiation marks.

7. The method for manufacturing a device according to claim 1, characterized in that the interface ablation layer contains an active energy ray curable component, a photopolymerization initiator, and an ultraviolet absorber.

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