Method and apparatus for manufacturing semiconductor device

Abstract

To provide a method for manufacturing a semiconductor device, which enables easier removal of a resin layer formed on a bump formation surface of a member with a bump.SOLUTION: A method for manufacturing a semiconductor device includes: a step (A) of forming a resin layer on a bump formation surface of a member with a bump, on which the plurality of bumps are formed; and a step (B) of irradiating the resin layer with a laser beam with a wavelength of 600 nm or less at output lower than 2.0 W so as to remove the resin layer coating a bump surface.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a method for manufacturing a semiconductor device and a manufacturing apparatus for a semiconductor device.

Background Art

[0002] In recent years, with the miniaturization and thinning of electronic devices, the demand for thinning and miniaturization of semiconductor packages has also increased. Therefore, as a mounting method for semiconductor elements, instead of the conventional wire bonding method that uses metal wires for connection, a mounting method of a flip chip connection method is proposed in which a protruding electrode called a bump is formed on the electrode of a chip, and the electrode of the substrate and the electrode of the chip are directly connected via the bump. In such a mounting method of the flip chip connection method, a resin layer is provided so as to cover bumps such as a wafer with bumps and a chip with bumps according to various purposes. Examples of such a resin layer include an adhesive layer for bonding a chip with bumps and a substrate, an underfill layer for reinforcing the connection between a chip with bumps and a substrate, and a protective layer for protecting a wafer with bumps or a chip with bumps.

[0003] However, when the resin layer covers the bumps, it is necessary to mechanically push aside the resin layer on the bumps to ensure an electrical connection between the bumps and the electrodes of the substrate. Therefore, there has been a problem in terms of the connection reliability between the chip with bumps and the substrate. Further, when connecting a chip with bumps and a substrate by a reflow process, since the molten solder derived from the bumps is covered with the resin layer, there has been a problem that a self-alignment effect (a phenomenon in which the alignment accuracy between the electrodes of the chip and the substrate is poor and even if misalignment occurs, it is automatically corrected to a normal position during reflow) cannot be obtained.

[0004] In order to solve the above problems, for example, there has been proposed a method including a step of forming a resin layer on a bump formation surface of a member with bumps where the bumps are formed, and a step of subjecting the resin layer to plasma treatment to remove the resin layer covering the surface of the bumps (see Patent Document 1). [Prior Art Documents] [Patent Documents]

[0005] [Patent Document 1] International Publication No. 2016 / 194431 [Summary of the Invention] [Problems to be Solved by the Invention]

[0006] However, in the method described in Patent Document 1, a vacuum device and various gases are required to perform plasma treatment. Therefore, from the viewpoint of more easily removing the resin layer, the establishment of a technique alternative to plasma treatment is demanded.

[0007] An object of the present invention is to provide a method for manufacturing a semiconductor device and a manufacturing apparatus for a semiconductor device capable of more easily removing a resin layer formed on a bump formation surface of a member with bumps. [Means for Solving the Problems]

[0008] According to the present invention, the following [1] to

[11] are provided. [1] A step (A) of forming a resin layer on a bump formation surface of a member with bumps where the bumps are formed; and A step (B) of irradiating the resin layer with laser light having a wavelength of 600 nm or less and an output of less than 2.0 W to remove the resin layer covering the surface of the bumps; A method for manufacturing a semiconductor device including the above. [2] The resin layer is a thermosetting resin layer, and The step (B) is performed at any timing before or after thermosetting the resin layer. The method for manufacturing a semiconductor device according to [1] above. [3] The method for manufacturing a semiconductor device according to [1] or [2] above, wherein the laser light is pulsed laser light. [4] The method for manufacturing a semiconductor device according to [3] above, wherein the energy per shot of the pulsed laser light is less than 100 μJ. [5] The method for manufacturing a semiconductor device according to any one of [1] to [4] above, wherein the transmittance of the resin layer at the wavelength of the laser light is 65% or less. [6] In the step (B), The method for manufacturing a semiconductor device according to any one of [1] to [5] above, wherein the removal of the resin layer is performed on the resin layer covering the top of the pump. [7] In the step (A), The method for manufacturing a semiconductor device according to any one of [1] to [6] above, wherein the resin layer is formed on the bump formation surface by attaching a composite sheet in which a resin film for forming the resin layer and a support sheet are laminated, with the resin film as the attachment surface, to the bump formation surface. [8] The support sheet is a back grind tape, The method for manufacturing a semiconductor device according to [7] above, further including a step (A - BG) of grinding the surface of the bump - attached member on the side opposite to the bump formation surface after laminating the resin film of the composite sheet and the bump formation surface. [9] The support sheet is a laminate including a base material and a buffer layer, The method for manufacturing a semiconductor device according to [7] above, further including a step (A - BG) of grinding the surface of the bump - attached member on the side opposite to the bump formation surface after laminating the resin film of the composite sheet and the bump formation surface.

[10] After the step (B), The method for manufacturing a semiconductor device according to [1] or [2] above, further including a step (C) of electrically connecting the bumps whose resin layer has been removed and the surface is exposed in the step (B) to the electrodes of the substrate after singulating the bump - attached member.

[11] Resin layer forming means for forming a resin layer on the bump forming surface of the member with bumps where bumps are formed, A laser irradiation device that irradiates the resin layer with laser light to remove the resin layer covering the surface of the bump, A manufacturing apparatus for a semiconductor device comprising the above.

Advantages of the Invention

[0009] According to the present invention, it is possible to provide a manufacturing method for a semiconductor device and a manufacturing apparatus for a semiconductor device that can more easily remove the resin layer formed on the bump forming surface of the member with bumps.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Modes for Carrying Out the Invention

[0011] The upper limit value and the lower limit value of the numerical range described in this specification can be arbitrarily combined. For example, when the numerical ranges “A to B” and “C to D” are described, the numerical ranges “A to D” and “C to B” are also included in the scope of the present invention. Also, the numerical range “lower limit value to upper limit value” described in this specification means that it is greater than or equal to the lower limit value and less than or equal to the upper limit value unless otherwise specified. Regarding the drawings, for the sake of easy understanding of the features of the present invention, they may be shown enlarged, reduced, or deformed for convenience, and the dimensional ratios, shapes, etc. of each component are not necessarily the same as the actual ones.

[0012] [Method for manufacturing semiconductor device and manufacturing apparatus for semiconductor device according to this embodiment] The method for manufacturing a semiconductor device according to this embodiment includes the following steps (A) and (B). · Step (A): A resin layer is formed on the bump formation surface of the member with bumps on which bumps are formed. · Step (B): The resin layer is irradiated with laser light having a wavelength of 600 nm or less and an output of less than 2.0 W, and the resin layer covering the surface of the bumps is removed. In addition, the manufacturing apparatus for a semiconductor device according to this embodiment includes a resin layer forming means for forming a resin layer on the bump formation surface of a member with bumps on which bumps are formed, and a laser irradiation device for irradiating the resin layer with laser light and removing the resin layer covering the surface of the bumps.

[0013] The inventors of the present invention have intensively studied to solve the above problems. As a result, it has been found that by irradiating the resin layer formed on the bump formation surface of the member with bumps with laser light having a wavelength of 600 nm or less and an output of less than 2.0 W, the resin layer can be removed and part of the pump can be exposed. Therefore, the inventors of the present invention have further conducted various studies and have completed the present invention. Hereinafter, the method for manufacturing a semiconductor device according to this embodiment will be described in detail.

[0014] [Step (A)] In step (A), a resin layer is formed on the bump formation surface of the member with bumps on which bumps are formed.

[0015] [Member with bumps] An example of the member with bumps used in the method for manufacturing a semiconductor device according to this embodiment is shown in FIG. 1. The member with bumps 2 shown in FIG. 1 includes a semiconductor wafer 21 and bumps 22 formed on one surface (circuit formation surface) of the semiconductor wafer 21. Generally, a plurality of bumps 22 are provided as shown in FIG. 1, but the number of bumps 22 is not limited to the mode shown in FIG. 1. The bump - provided member 2 has a bump - forming surface 2A on which bumps 22 are formed and a back surface 2B on which bumps 22 are not formed. In the following description, the "bump - provided member" is also referred to as a "bump - provided wafer".

[0016] As the semiconductor wafer 21, a semiconductor wafer generally used for a bump - provided wafer can be used without particular limitation. Examples of such a semiconductor wafer include a semiconductor wafer on which circuits such as wirings, capacitors, diodes, and transistors are formed on one surface. The material of the semiconductor wafer is not particularly limited, and examples thereof include a silicon wafer, a silicon carbide wafer, a compound semiconductor wafer, a glass wafer, and a sapphire wafer.

[0017] The size of the semiconductor wafer 21 is not particularly limited. From the viewpoint of improving batch - processing efficiency, it is preferably 6 inches (diameter 150 mm) or more, more preferably 8 inches (diameter 200 mm) or more. Note that the shape of the semiconductor wafer 21 is not limited to a circular shape, and may be, for example, a rectangular shape such as a square or a rectangle. In the case of a rectangular semiconductor wafer, from the viewpoint of improving batch - processing efficiency, the length of the longest side is preferably 150 mm in diameter, and more preferably 200 mm or more in diameter.

[0018] The thickness of the semiconductor wafer 21 is not particularly limited. However, when the resin layer is a thermosetting resin layer, from the viewpoint of easily suppressing warping associated with the shrinkage of the resin layer when the resin layer is thermoset, it is preferably 100 μm to 1,000 μm.

[0019] As the material of the bumps 22, a material generally used for bumps can be used without particular limitation. Examples of such a material include one or more selected from the group consisting of copper, silver, gold, aluminum, and solder alloys. Examples of the solder alloy include lead - free solder containing tin, silver, and copper.

[0020] The height of the bump 22 is not particularly limited, but is preferably 5 μm to 1000 μm, more preferably 50 μm to 500 μm or less, and still more preferably 100 μm to 300 μm. In this specification, the "height of the bump" means the height at the site that exists at the highest position among the bumps from the bump formation surface. The cross-sectional shape of the bump 22 when viewed from the side is not particularly limited, and may be, for example, a semi-circular shape, a semi-elliptical shape, a circular shape, a rectangular shape, or a trapezoidal shape. The width of the bump 22 is not particularly limited, but is preferably 5 μm to 1000 μm, more preferably 50 μm to 500 μm or less, and still more preferably 100 μm to 300 μm. In this specification, the "width of the bump" means the maximum value of the length of a line segment obtained by connecting two different points on the bump surface by a straight line when the bump is viewed from above in a plan view from a direction perpendicular to the bump formation surface. The pitch (distance between adjacent bumps) of the bump 22 is not particularly limited, but is preferably 10 μm to 2,000 μm, more preferably 100 μm to 1,000 μm, and still more preferably 200 μm to 600 μm. In this specification, the "pitch of the bump" means the minimum value of the distance between the surfaces of adjacent bumps.

[0021] As the type of the bump 22, those generally used for bumps can be adopted without particular limitation. Specifically, for example, ball bumps, mushroom bumps, stud bumps, cone bumps, cylinder bumps, dot bumps, cube bumps, and pillar bumps can be mentioned.

[0022] The bump 22 may be used alone or in combination of two or more.

[0023] <Resin layer> The resin layer formed on the bump formation surface of the bump - equipped member may be a non - curable resin layer (i.e., a resin layer used without performing a curing treatment) or a thermosetting resin layer. However, from the viewpoint of improving the covering property of the bump formation surface, etc., it is preferably a thermosetting resin layer. Here, when the resin layer is a thermosetting resin layer, in the method for manufacturing a semiconductor device of the present embodiment, the step (B) can be carried out at any timing before and after thermally curing the resin layer to remove the resin layer and expose the bumps. Therefore, it can be said that the method for manufacturing a semiconductor device of the present embodiment is a manufacturing method with a high degree of freedom such as changing the order of steps.

[0024] The method for forming a resin layer on the bump formation surface of the bump - equipped member is not particularly limited, and examples include a method of directly applying a resin composition to the bump formation surface of the bump - equipped member to form a resin layer, and a method of attaching a resin film to the bump formation surface of the bump - equipped member to form a resin layer. Here, from the viewpoints of improving simplicity and covering property, etc., the formation of the resin layer on the bump formation surface of the bump - equipped member is preferably carried out by attaching a composite sheet in which a resin film for forming the resin layer and a support sheet are laminated to the bump formation surface with the resin film as the attachment surface. Hereinafter, an example of the composite sheet used in the present embodiment will be described in detail.

[0025] <<Composite Sheet>> An example of the composite sheet used in the method for manufacturing a semiconductor device of the present embodiment is shown in FIG. 2. The composite sheet 1 shown in FIG. 2 includes a base material 11, a buffer layer 12 laminated on one surface side of the base material 11, and a resin film 13 laminated on the surface side of the buffer layer 12 opposite to the base material 11. The support sheet (X) is composed of the base material 11 and the buffer layer 12.

[0026] Note that although the composite sheet 1 is composed only of the base material 11, the buffer layer 12, and the resin film 13, the composite sheet 1 of the present embodiment may have other layers other than the base material 11, the buffer layer 12, and the resin film 13. Examples of other layers include, for example, an intermediate release layer provided between the buffer layer 12 and the resin film 13; an adhesion layer for improving the adhesion between the base material 11 and the buffer layer 12; a release film provided on the surface of the resin film 13 opposite to the buffer layer 12; and the like. Among these, the composite sheet 1 of the present embodiment preferably has an intermediate release layer. In the composite sheet 1 not provided with a release film, it is preferable that the resin film 13 is one of the outermost layers. Further, it is preferable that the base material 11 and the buffer layer 12 are provided in direct contact with each other. When the composite sheet 1 has an intermediate release layer, it is preferable that the buffer layer 12 and the intermediate release layer are provided in direct contact with each other, and the intermediate release layer and the resin film 13 are provided in direct contact with each other.

[0027] Hereinafter, the resin film included in the composite sheet 1, and further, the base material, buffer layer, release film, and intermediate release layer that may be provided in the support sheet (X) included in the composite sheet 1 will be described in detail.

[0028] (Resin Film) The resin film is formed of a resin composition. The resin composition contains, for example, a thermoplastic component and a thermosetting component. The thermoplastic component is a component for imparting film-forming properties and flexibility to the resin film formed from the resin composition. The thermosetting component is a component for imparting thermosetting properties to the resin film formed from the resin composition, and the resin layer after thermosetting can be made hard. The thermoplastic component may be used alone or in combination of two or more. The thermosetting component may be used alone or in combination of two or more.

[0029] Examples of the thermoplastic component include polyvinyl acetal resins, acrylic resins, polyester resins, urethane resins, phenoxy resins, silicone resins, and the like. Among these, one or more selected from the group consisting of polyvinyl acetal resins, acrylic resins, and polyester resins are preferable, and polyvinyl acetal resins are more preferable.

[0030] As the polyvinyl acetal resin, known ones can be appropriately used, but one or more selected from the group consisting of polyvinyl formal and polyvinyl butyral are preferable, and polyvinyl butyral is more preferable. As the polyvinyl butyral, those having a structural unit represented by the following formula (i)-1, a structural unit represented by the following formula (i)-2, and a structural unit represented by the following formula (i)-3 are preferable.

[0031]

Chemical formula

[0032] The mass average molecular weight (Mw) of the polyvinyl acetal resin is not particularly limited, but is preferably 5,000 to 200,000, more preferably 8,000 to 100,000. The mass average molecular weight (Mw) of the polyvinyl acetal resin means a value measured under the following conditions using a gel permeation chromatograph (manufactured by Tosoh Corporation, product name "HLC-8320GPC") and measured in terms of standard polystyrene conversion. · Column: A series of "TSKgel guardcolumn SuperHzH", "TSKgel SuperHZM-M", "TSKgel SuperHZM-M", and "TSKgel SuperHZ2000" (all manufactured by Tosoh Corporation) connected in sequence · Column temperature: 40 °C · Developing solvent: Tetrahydrofuran · Standard substance: Polystyrene · Injection volume: 20 μl · Flow rate: 0.35 mL / min · Detector: Differential refractometer

[0033] The ratios of three or more monomers constituting the polyvinyl acetal resin can be arbitrarily selected.

[0034] Examples of the thermosetting component include epoxy resins, phenolic resins, melamine resins, urea resins, thermosetting polyimide resins, etc. Among these, epoxy resins and phenolic resins are preferred.

[0035] The resin composition may further contain one or more other additives selected from fillers, curing accelerators, crosslinking agents, surface modifiers such as silicone oil, coupling agents, surfactants, plasticizers, antistatic agents, antioxidants, and gettering agents.

[0036] The resin film may be only one layer or multiple layers of two or more layers. When the resin film is multiple layers, these multiple layers may be the same as or different from each other, and the combination of these multiple layers is not particularly limited.

[0037] The resin film can be produced by a known method using the resin composition. For example, the resin film can be formed by coating the resin composition on the release-treated surface of the release film.

[0038] The thickness of the resin film is not particularly limited, but is preferably 1 μm to 200 μm, more preferably 5 μm to 100 μm, and still more preferably 10 to 50 μm.

[0039] (Base material) The base material is in the form of a sheet or film, and examples of its constituent materials include the following various resins. Examples of the resin constituting the base material include polyethylene such as low density polyethylene (LDPE), linear low density polyethylene (LLDPE), and high density polyethylene (HDPE); polyolefins other than polyethylene such as polypropylene, polybutene, polybutadiene, polymethylpentene, and norbornene resin; ethylene-based copolymers such as ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate copolymer, and ethylene-norbornene copolymer (copolymers obtained using ethylene as a monomer); vinyl chloride-based resins such as polyvinyl chloride and vinyl chloride copolymer (resins obtained using vinyl chloride as a monomer); polystyrene; polycycloolefin; polyesters such as polyethylene terephthalate, polyethylene naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalene dicarboxylate, and wholly aromatic polyesters in which all constitutional units have an aromatic cyclic group; copolymers of two or more of the above polyesters; poly(meth)acrylate; polyurethane; polyurethane acrylate; polyimide; polyamide; polycarbonate; fluororesin; polyacetal; modified polyphenylene oxide; polyphenylene sulfide; polysulfone; polyether ketone; etc. In addition, examples of the resin constituting the base material include polymer alloys such as a mixture of the above polyester and other resins. The polymer alloy of the above polyester and other resins preferably has a relatively small amount of resin other than the polyester. In addition, examples of the resin constituting the base material include crosslinked resins in which one or more of the above resins exemplified so far are crosslinked; modified resins such as ionomers using one or more of the above resins exemplified so far. The resin constituting the base material may be used alone or in combination of two or more.

[0040] The base material may be only one layer or may be two or more layers. When the base material has a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

[0041] The thickness of the base material is not particularly limited, but is preferably 5 μm to 1,000 μm, more preferably 10 μm to 500 μm, and even more preferably 15 μm to 300 μm.

[0042] In addition to the main constituent materials such as the above resin, the base material may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, softeners (plasticizers), etc.

[0043] The base material may be transparent, opaque, colored according to the purpose, or another layer may be vapor-deposited thereon.

[0044] The base material can be manufactured by a known method. For example, a base material containing a resin can be manufactured by molding a resin composition containing the above resin.

[0045] (Buffer layer) The buffer layer is a layer having a buffering action against the force applied to the resin film. The buffer layer is in the form of a sheet or a film, and its constituent material is not particularly limited. Preferred buffer layers include, for example, those containing urethane (meth)acrylate. The buffer layer may contain other components in addition to urethane (meth)acrylate. The other components are not particularly limited and are appropriately selected according to the purpose.

[0046] The buffer layer may be only one layer or two or more layers. When the buffer layer is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

[0047] The thickness of the buffer layer can be appropriately adjusted according to the height of the bump to be protected. From the perspective of being able to easily absorb the influence of bumps with relatively high heights, it is preferably 150 μm to 1,000 μm, more preferably 170 μm to 800 μm, and even more preferably 200 μm to 600 μm.

[0048] (Release film) As the release film, those conventionally known can be used. For example, those having a release layer that has been release-treated with a release agent on a base material for the release film can be mentioned.

[0049] (Intermediate release layer) The intermediate release layer has a function of improving the peelability from the resin layer of the support sheet (X) after a composite sheet is attached to the bump formation surface of the wafer with bumps. The intermediate release layer is in the form of a sheet or a film, and its constituent material is not particularly limited. Examples of the intermediate release layer include silicone resin, alkyd resin, acrylic resin, ethylene-vinyl acetate copolymer, etc. Among these, ethylene-vinyl acetate copolymer is preferable from the perspective of peelability, etc. The intermediate release layer may contain other components other than those described above. The other components are not particularly limited and are appropriately selected according to the purpose.

[0050] The intermediate release layer may be only one layer or a plurality of two or more layers. When the intermediate release layer is a plurality of layers, these plurality of layers may be the same as or different from each other, and the combination of these plurality of layers is not particularly limited.

[0051] The thickness of the intermediate release layer is not particularly limited, but is preferably 5 μm to 30 μm, more preferably 6 μm to 25 μm, and even more preferably 7 μm to 20 μm.

[0052] (Method for manufacturing a composite sheet) The composite sheet can be manufactured by sequentially laminating the above-described layers so as to have the corresponding positional relationship. For example, a composite sheet having a base material, a buffer layer, an intermediate release layer, and a resin film in this order can be manufactured by the method shown below. A composition for forming a buffer layer is applied onto one surface of the base material and dried as necessary, thereby obtaining a first laminated sheet formed by laminating the base material and the buffer layer. A release film may be provided on the surface of the buffer layer in the first laminated sheet opposite to the base material as necessary. Separately, a composition for forming an intermediate release layer is applied onto the release-treated surface of the release film and dried as necessary, thereby forming an intermediate release layer on the release film. Separately, a resin composition is applied onto the release-treated surface of the release film and dried as necessary, thereby forming a resin film on the release film. Next, the exposed surface of the buffer layer in the first laminated sheet opposite to the base material and the exposed surface of the intermediate release layer opposite to the release film are bonded together. Thereby, a second laminated sheet having a structure in which the base material, the buffer layer, the intermediate release layer, and the release film are laminated in this order is obtained.

[0053] Next, in the second laminated sheet, the release film is removed, and the exposed surface of the intermediate release layer thus formed and the exposed surface of the resin film opposite to the release film are bonded together. Thereby, a composite sheet having a structure in which the base material, the buffer layer, the intermediate release layer, the resin film, and the release film are laminated in this order is obtained. The release film provided on the resin film in the composite sheet may be removed at any stage from after the manufacture of the composite sheet to after use.

[0054] A composite sheet having layers other than the above-described layers or a composite sheet having no arbitrary layer such as an intermediate release layer can be manufactured by appropriately adding or omitting steps so that the lamination position of each layer becomes a desired position in the above-described manufacturing method. The same applies to the modified forms of the composite sheet described later.

[0055] (Modified forms of the composite sheet) Examples of modified forms of the composite sheet include the following aspects. (1) A backgrind tape and a composite sheet laminated on the adhesive surface of the backgrind tape. In this case, the support sheet is the backgrind tape. The backgrind tape is, for example, a laminate of a base material and an adhesive layer. The adhesive layer may be an energy ray (e.g., ultraviolet ray) curable adhesive layer. (2) A composite sheet including a base material, a concavo-convex absorption layer laminated on one surface of the base material, a buffer layer laminated on the opposite surface side of the surface on which the concavo-convex absorption layer of the base material is laminated, and a resin film laminated on the opposite surface side of the surface on which the buffer layer is laminated on the base material. In this case, the support sheet is a laminate of the concavo-convex absorption layer, the base material, and the buffer layer. In this aspect, an intermediate release layer or the like may be provided between the buffer layer and the resin film.

[0056] Here, in the case of the aspect (1) above, after laminating the resin film of the composite sheet and the bump formation surface, it is preferably further included a step (A-BG) of grinding the surface on the opposite side of the bump formation surface of the bump member. Thereby, the back surface of the bump member can be ground to facilitate the thinning process of the bump member. After grinding the back surface, a resin layer can be formed on the bump formation surface by peeling the backgrind tape. Also, when the support sheet is a laminate including a base material and a buffer layer as in the case of the above-described composite sheet aspect or the modified aspect (2) of the above-described composite sheet, after laminating the resin film of the composite sheet and the bump formation surface, it is preferably further included a step (A-BG) of grinding the surface on the opposite side of the bump formation surface of the bump member. Thereby, the back surface of the bump member can be ground to facilitate the thinning process of the bump member. After grinding the back surface, a resin layer can be formed on the bump formation surface by peeling the support sheet. Also, particularly in the case of the modified aspect (2) of the above-described composite sheet, since it includes a concavo-convex absorption layer, it is easy to suppress cracking of the bump member during grinding, and it is also easy to ensure the smoothness of the bump member after grinding (the uniformity of the thickness in the plane of the bump member).

[0057] <Resin layer forming step> The process of forming a resin layer using a composite sheet will be described with reference to FIG. 3. In the process of forming a resin layer using a composite sheet, as shown in FIG. 3(A), the resin film 13 of the composite sheet 1 is bonded to the bump formation surface 2A of the wafer 2 with bumps by a pressure roller 10 as a resin layer forming means. As a result, the bump formation surface 2A is covered with the resin film 13, and the bumps 22 are covered with the resin film 13. In this embodiment, the structure represented by reference numeral 13 is referred to as a resin film in a state of being laminated with the support sheet (X) of the composite sheet 1, and is referred to as a resin layer in a state where the support sheet (X) is peeled off from the composite sheet 1. Here, as a method of attaching the resin film 13, a known method can be adopted and is not particularly limited, but a method by pressure bonding is preferable. Pressure bonding is usually performed while pressing the composite sheet 1 with a pressure roller 10 or the like. The conditions for pressure bonding are not particularly limited, but the pressure bonding temperature is preferably 40°C to 120°C. The roll pressure is preferably 0.1 MPa to 20 MPa. The pressure bonding speed is preferably 1 mm / sec to 20 mm / sec. Further, the thickness of the resin film 13 of the composite sheet 1 is preferably smaller than the height dimension of the bumps 22, more preferably 0.8 times or less of the height dimension of the bumps 22, and still more preferably 0.1 times to 0.7 times of the height dimension of the bumps 22. If the thickness of the resin film 13 is below the above upper limit, the resin layer 13 covering the surface of the bumps 22 can be made thinner and can be easily removed in the resin removal process described later. Also, if it is above the above lower limit, the effect of protecting the member 2 with bumps is likely to be exhibited. Furthermore, as the resin layer forming means, a known pasting device can be adopted and is not particularly limited. For example, the pasting devices described in JP-A-2023-000324 and JP-A-2020-047899 may be used. Also, the resin layer forming means can bond a single film 13 to the bump formation surface 2A without using the composite sheet 1.

[0058] <Support Sheet Peeling Step> In the support sheet process, as shown in Fig. 3(B), the support sheet (X) of the composite sheet 1 is peeled off from the resin film 13 by the suction pad 20 as the support sheet peeling means. Through this support sheet peeling process, the wafer 2 with bumps having the resin layer 13 formed on the bump formation surface 2A can be obtained. Further, the resin layer 13 is preferably formed so as to follow the shape of the bumps 22. Note that, as the support sheet peeling means, a known peeling device can be adopted and is not particularly limited. For example, the peeling devices described in JP-A-2016-178244 and JP-A-2017-050363 may be used. Furthermore, when a single resin film 13 is bonded to the bump formation surface 2A by the resin layer forming means, the support sheet peeling process and the support sheet peeling means may not be necessary.

[0059] [Process (B)] In Process (B), as shown in Fig. 3(C), laser light is irradiated onto the resin layer by the laser irradiation device 50 to remove the resin layer covering the surface of the bumps (hereinafter, also referred to as the "resin removal process"). In the method for manufacturing a semiconductor device of the present embodiment, the irradiation conditions of the laser light are adjusted within a specific range. Thereby, the resin layer covering the surface of the bumps can be satisfactorily removed. Hereinafter, after explaining the irradiation conditions of the laser light, the resin removal process will be described in detail.

[0060] <Laser Light Irradiation Conditions> In Process (B), laser light with a wavelength of 600 nm or less is irradiated onto the resin layer with an output of less than 2.0 W to remove the resin layer covering the surface of the bumps. By irradiating the resin layer with laser light having a wavelength of 600 nm or less and an output of less than 2.0 W, the resin layer covering the surface of the bumps can be satisfactorily removed. When the wavelength of the laser light is longer than 600 nm, it becomes difficult to adjust the output of the laser light to less than 2.0 W. As a result, the removability of the resin layer deteriorates. Further, when the resin layer is thermosetting, the resin layer may be cured by the heat generated by the laser light, and the resin layer may not be removable. From the viewpoint of making it easier to suppress debris deformation of bumps and improving the reliability of the manufactured semiconductor device, the output of the laser light is preferably less than 1.5 W, more preferably less than 1.2 W, and still more preferably less than 1.0 W. Also, from the viewpoint of improving the removability of the resin layer, the output of the laser light is preferably 0.20 W or more, more preferably 0.25 W or more, and still more preferably 0.30 W or more.

[0061] Here, the laser light used in the present embodiment is preferably pulsed laser light. By using pulsed laser light, it is possible to easily adjust the output of the laser light to less than 2.0 W, and it is easy to improve the removability of the resin layer. Also, from the viewpoint of further improving the removability of the resin layer, the pulse frequency of the pulsed laser light is preferably 20 kHz to 100 kHz, more preferably 30 kHz to 90 kHz, and still more preferably 40 kHz to 80 kHz.

[0062] The laser irradiation device that can oscillate pulsed laser light with a wavelength of 600 nm or less and the above pulse frequency is not particularly limited, and examples thereof include ultraviolet laser devices such as Keyence's MD-U1000C and green laser devices such as EOTECH's CSM300M.

[0063] Here, from the viewpoint of making it easier to further suppress debris deformation of bumps and improving the reliability of the manufactured semiconductor device, the energy per shot of the laser light is preferably less than 100 μJ, more preferably less than 50 μJ, still more preferably less than 30 μJ, and even more preferably less than 25 μJ. Also, from the viewpoint of improving the removability of the resin layer, the energy per shot of the laser light is preferably 1 μJ or more, more preferably 2 μJ or more, and still more preferably 3 μJ or more.

[0064] In addition, the beam diameter of the laser light is appropriately set according to the size (width of the bump) of the bump, preferably 5 μm to 600 μm, more preferably 10 μm to 500 μm, and still more preferably 15 μm to 300 μm.

[0065] From the viewpoint of improving the removability of the resin layer, it is preferable that the transmittance of the resin layer at the wavelength of the laser light irradiated on the resin layer is also below a specific value. Specifically, the transmittance of the resin layer at the wavelength of the laser light irradiated on the resin layer is preferably 65% or less, more preferably 40% or less, and still more preferably 30% or less. In this specification, the transmittance of the resin layer means a value measured by the method described in the examples described later.

[0066] <Resin removal step> In the resin removal step, as shown in FIG. 3(C), the laser LB is irradiated onto the resin layer 13 covering the surface of the bump 22 by the laser irradiation device 50 to remove the resin layer 13. The resin layer 13 can be removed according to its purpose. For example, if the purpose is the electrical connection between the exposed bump 22 and the electrode 42 of the substrate 4, the resin layer 13 may be removed to such an extent that electrical connection can be made. Specifically, from the viewpoint of the balance between connection reliability and ensuring the function of the resin layer 13, the removal amount of the resin layer 13 can be adjusted. Therefore, it is not necessary to irradiate the entire resin layer 13 with the laser LB. As described above, if the purpose is the electrical connection between the bump 22 and the electrode 42 of the substrate 4, the laser LB may be selectively irradiated on a part of the resin layer 13 covering the surface of the bump 22 (for example, the tip portion (top portion) of the bump 22) to remove the resin layer 13 covering the top portion. In this way, if the resin layer 13 covering the top portion of the bump 22 is removed by laser irradiation, the surface of the bump 22 is exposed. In addition, in the resin removal process, the laser LB can be selectively irradiated onto the region of the resin layer 13 to be removed, and it is not necessary to irradiate the laser LB onto the portion of the wafer with bumps that is originally to be protected. Therefore, deterioration and damage to the portion of the wafer with bumps that is originally to be protected can be prevented. Examples of the portion of the bump member that is originally to be protected include the root portion (base portion) of the bump 22, the bump formation surface 2A, and the back surface 2B. Also, for example, when removing the resin layer 13 by a grinding method, since a dicing saw, a grinder, or a surface planer, etc. comes into contact with the resin layer 13 covering the bump 22, a mechanical load is applied to the bump 22. However, in the resin removal process of the present embodiment, the resin layer 13 can be removed without applying such a mechanical load to the bump 22.

[0067] In the resin removal process, as shown in FIG. 3(C), for example, the laser irradiation device 50 is arranged to face the bump 22. Then, when the removal of the resin layer 13 for one bump 22 is completed, the resin layer 13 for another bump 22 is removed in the same manner. In this way, by repeating the removal of the resin layer 13 for each bump 22, a part of the resin layer 13 covering the plurality of bumps 22 provided on the wafer 2 with bumps (for example, the resin layer 13 covering the top of the bump 22) can be selectively removed. Note that, as a method of moving the laser light irradiation position from one bump to another bump, there are a method of moving the laser irradiation device 50, a method of moving the focus of the laser light emitted from the laser irradiation device 50, a method of moving the wafer 2 with bumps (a fixing member (for example, a suction table, etc.) for fixing the wafer 2 with bumps), or a method combining these, etc. Also, the method of arranging the laser irradiation device 50 to face the bump 22 and irradiating the laser light from directly above the bump 22 is not limited. For example, the laser light may be irradiated from an obliquely upward direction of the bump 22. Note that the number of laser light irradiations (number of shots) for one bump may be one, but depending on the thickness of the portion of the resin layer 13 covering the bump 22 that is desired to be removed, the number of laser light irradiations (number of shots) for one bump may be two or more. For example, after irradiating each of the bumps 22 in the bump formation surface 2A of the wafer 2 with bumps with one shot of laser light, the bumps 22 in the bump formation surface 2A of the wafer 2 with bumps may be irradiated with one shot of laser light again for each of them, so that the bumps 22 are irradiated with laser light a plurality of times. Alternatively, it is of course possible to sequentially irradiate each of the bumps 22 in the bump formation surface 2A of the wafer 2 with bumps with two or more shots of laser light. Also, from the viewpoint of precisely controlling the laser light irradiation position, it is preferable to irradiate the resin layer 13 with the laser LB while the wafer 2 with bumps is fixed to a fixing member such as a suction table and an adhesive sheet.

[0068] Here, in the resin removal step, it is preferable to remove the resin layer 13 so that the laser irradiation surface has irregularities, rather than making the laser irradiation surface smooth. For example, in the resin removal step, as shown in FIG. 3(C), it is preferable that irregularities remain on the plane composed of the bump 22 and the resin layer 13. If such irregularities remain, in the bonding step described later, when connecting the chip 2a with bumps onto the electrode 42 of the substrate 4, a gap is formed between the chip 2a with bumps and the electrode 42 of the substrate 4 by the concave portions of the irregularities. Since there is room for the bump 22 and the resin layer 13 to move into this gap, it is possible to connect while crushing the bump 22. Therefore, in the present embodiment, the connection reliability can be improved as compared with the case of bonding the chip 2a with bumps in which the plane composed of the bump 22 and the resin layer 13 is smooth.

[0069] [Step (C)] The method for manufacturing a semiconductor device according to the present embodiment preferably further includes the following step (C) after step (B). · Step (C): After singulating the member with bumps (wafer with bumps), the bumps whose resin layer has been removed and whose surfaces are exposed in Step (B) are electrically connected to the electrodes of the substrate. Specifically, as shown in FIG. 3(D), a step of dicing the wafer 2 with bumps using a dicing blade 60 (dicing step), and as shown in FIG. 3(E), a step of picking up the diced chip 2a with bumps and adhesively fixing it to the substrate 4 as an adherend (bonding step). By this method, the resin layer 13 is removed, and the bump 22 whose surface is exposed is electrically connected to the electrode 42 of the substrate 4.

[0070] <Dicing tape attaching step> In the dicing tape attaching step, the dicing tape 3 is bonded to the surface (back surface 2B) of the wafer 2 with bumps where the bumps 22 are not formed. The timing for bonding the dicing tape 3 to the back surface 2B of the wafer 2 with bumps is not particularly limited, and examples include after Step (B). Alternatively, the timing for bonding the dicing tape 3 to the back surface 2B of the wafer 2 with bumps may be before Step (B). Specifically, for example, it may be before Step (B) and after Step (A - BG). As the bonding method, a known method can be adopted and is not particularly limited, but a method by pressure bonding is preferred. Pressure bonding is usually performed while pressing the dicing tape 3 with a pressure roller or the like. The conditions for pressure bonding are not particularly limited and can be set as appropriate. Also, for the dicing tape 3, a known dicing tape can be used. Further, the dicing tape may be a dicing tape with a jig such as a ring frame attached thereto.

[0071] <Dicing step> In the dicing step, as shown in FIG. 3(D), the wafer 2 with bumps is diced using the dicing blade 60. In this way, the wafer 2 with bumps can be singulated into chips 2a with bumps. The dicing device is not particularly limited, and a known dicing device can be used. Also, the dicing conditions are not particularly limited. Instead of the dicing method using a dicing blade, various dicing methods such as a laser dicing method and a stealth dicing method may be employed.

[0072] <Bonding Process> In the bonding process, as shown in FIG. 3(E), the bumped chip 2a diced into individual pieces is picked up and adhesively fixed to a substrate 4 including a base material 41 and an electrode 42. Since the bump 22 of the bumped chip 2a has the resin layer 13 removed and the surface is exposed, the bump 22 and the electrode 42 of the substrate 4 can be electrically connected. The substrate 4 is not particularly limited, and a lead frame, a wiring board, a silicon wafer having a circuit formed on the surface, a silicon chip, etc. can be used. The material of the base material 41 is not particularly limited, and examples include ceramic and plastic. Also, examples of the plastic include epoxy, bismaleimide triazine, and polyimide.

[0073] In the bonding process, if necessary, a reflow process may be performed to melt the bump 22 of the bumped chip 2a and solder-join the bumped chip 2a and the substrate 4. The conditions of the reflow process can be appropriately set according to the type of solder and the like. As described above, the semiconductor device 100 can be manufactured.

[0074] [Modification Example of the Manufacturing Method of the Semiconductor Device of the Present Embodiment] In the above-described manufacturing method of the semiconductor device, after forming the resin layer 13 on the wafer 2 with bumps, the resin layer 13 is removed by irradiating laser light, and then diced into individual bumped chips 2a. However, the manufacturing method of the semiconductor device of the present embodiment is not limited to such a method, and after forming the resin layer 13 on the pre-individualized bumped chip 2a, laser light may be irradiated onto the resin layer 13.

[0075] In the above-described method for manufacturing a semiconductor device, although the wafer 2 with bumps is used as the member with bumps, the present invention is not limited thereto. For example, the member with bumps may be a package having bumps (e.g., BGA (Ball grid array), CSP (Chip size package), etc.).

Example

[0076] The present invention will be specifically described by the following examples, but the present invention is not limited to the following examples.

[0077] [Preparation of Evaluation Sample] A sheet (composite sheet) for forming a resin layer was prepared by the following procedure. First, the following components (a), (b), (c), (d), and (e) were mixed at the following mixing ratio (in terms of solid content) to prepare a mixture. Then, this mixture was diluted with methyl ethyl ketone to prepare a resin composition having a solid content concentration of 55% by mass. (a) Binder polymer (polyvinyl butyral resin, thermoplastic component) Mixing ratio: 9.9% by mass (b) Epoxy resin (thermosetting component) Mixing ratio: 62.8% by mass (c) Phenolic resin (thermosetting component) Mixing ratio: 18.1% by mass (d) Imidazole-based compound (curing accelerator) Mixing ratio: 0.2% by mass (e) Silica filler (filler) Mixing ratio: 9% by mass

[0078] Next, a release film obtained by subjecting one side of a polyethylene terephthalate film to a release treatment with silicone (「SP-PET381031」manufactured by Lintec Corporation, thickness 38 μm) was used. The resin composition was applied to the release-treated surface and heated and dried at 120°C for 2 minutes to form a thermosetting resin film with a thickness of 30 μm on the release film. In addition, in this example, the thickness of each layer was measured at 23°C using a constant pressure thickness measuring instrument (model number: "PG-02J", standard specifications: conforming to JIS K 6783:2009, Z 1702:1994, Z 1709:1995) manufactured by Techlock Co., Ltd.

[0079] Next, the adhesive layer of an adhesive tape (manufactured by Lintec Corporation, E-8510HR) as a support sheet obtained by laminating a base material and an adhesive layer was bonded to a thermosetting resin film formed on a release film to produce a composite sheet. The composite sheet has the following laminated structure. · Release film / Thermosetting resin film / Adhesive layer / Base material

[0080] After peeling off the release film of the composite sheet, the resin film of the composite sheet was bonded to the bump formation surface of the wafer with bumps under the following bonding conditions. (Bonding conditions) · Apparatus (resin layer forming means): Roller laminator (manufactured by Lintec Corporation, product name: RAD-3510F / 12) · Temperature: 90°C (table temperature) · Pressure: 0.5 MPa · Speed: 2 mm / sec (Wafer with bumps) · Type of bump: Ball bump · Bump height: 200 μm · Bump width (diameter): 200 μm · Pitch of bumps: 400 μm · Wafer size: 8 inches · Wafer thickness: 250 μm

[0081] After bonding the composite sheet to the wafer with bumps, UV was irradiated from the composite sheet side using RAD-2700 (product name) manufactured by Lintec Corporation as the resin layer forming means, and only the adhesive tape was peeled off to obtain a wafer with bumps having a thermosetting resin layer formed thereon. Then, a wafer with bumps having a thermosetting resin layer formed thereon was heat-treated under the conditions of 130°C for 2 hours to cure the thermosetting resin layer, and the resulting product was designated as "Evaluation Sample 1". Also, a wafer with bumps having a thermosetting resin layer formed thereon was used as "Evaluation Sample 2" without performing heat treatment and leaving the resin layer in an uncured state.

[0082] [Examples 1 - 16, Comparative Examples 1 - 6] Using Evaluation Sample 1 or 2, laser light was irradiated onto the bump top portions under the irradiation conditions shown in Tables 1 - 3, and Evaluation 1 (evaluation of resin layer removability) described later was carried out. Also, Evaluation 2 (evaluation of debris deformation) described later was carried out. Further, using Evaluation Sample 1 or 2 after laser light irradiation onto the bump top portions, Evaluation 3 (evaluation of reliability) described later was carried out. Details of the lasers used in Examples 1 - 16 and Comparative Examples 3 - 6 are shown below. For Comparative Examples 1 - 2, only Evaluation 3 was carried out without laser light irradiation. In all examples and comparative examples, the beam diameter of the laser light (beam diameter at the irradiation site) was adjusted to 20 μm. Also, the number of laser light irradiations in Examples 1 - 16 and Comparative Examples 5 - 6 was all 1 shot (irradiation time: 0.011 seconds / 1 bump). The irradiation time of the laser light in Comparative Examples 3 - 4 was 0.011 seconds / 1 bump. · Examples 1 - 12: UV laser (manufactured by Keyence, MD - U1000C, laser light wavelength: 355 nm) · Examples 13 - 16: Green laser (manufactured by EOTECH, CSM300M, laser light wavelength: 532 nm) · Comparative Examples 3 - 4: CO 2 Laser (manufactured by Keyence, ML - Z9610T, laser light wavelength: 9,600 nm) · Comparative Examples 5 - 6: Fiber laser (manufactured by Keyence, MD - F3200, laser light wavelength: 1,090 nm)

[0083] <Evaluation 1: Evaluation of resin layer removability> Using the Keyence electron microscope VE-9800, the top of the bump irradiated with laser light was observed to check whether the resin layer on the top of the bump had been removed. The evaluation criteria are shown below. In this example, A and B were considered qualified. · Evaluation A: It can be removed. · Evaluation B: It can be removed, but a small amount of residue is observed. · Evaluation C: The removal is insufficient. · Evaluation D: It cannot be removed. In addition, when the resin layer is temporarily removed during laser irradiation but is considered to have melted and spread due to the heat during laser irradiation, covering the top of the bump again, it was evaluated as C. Also, those with no trace like Evaluation C and where the resin layer could not be removed at all were evaluated as D.

[0084] <Evaluation 2: Evaluation of Debris and Deformation> When performing Evaluation 1, the debris and deformation of the bumps were also observed. The evaluation criteria are shown below. · Evaluation A: No debris or deformation of the bumps is observed. · Evaluation B: Slight debris or deformation of the bumps is observed. · Evaluation C: Debris or deformation of the bumps is confirmed.

[0085] <Evaluation 3: Evaluation of Reliability> After singulating the evaluation sample 1 or 2 after irradiating the top of the bump with laser light to obtain a chip with bumps, it was mounted on a substrate using a flip chip bonder (manufactured by Toray Engineering, FC3000W) to fabricate a semiconductor device. Next, the following (1) and (2) were applied as one cycle to the semiconductor device, and a plurality of cycles of load were applied. (1) -40°C, 15 minutes (2) 125°C, 15 minutes Taking the reliability when the removal of the resin layer on the top of the bump is performed by plasma treatment as the standard (500 cycles), those with reliability ensured at a cycle number more than 500 were evaluated as A, and the others were evaluated as B.

[0086] <Other evaluation: Measurement of the transmittance of the resin layer> The thermosetting resin film formed on the release film, which was prepared when preparing the evaluation sample, was attached to a glass substrate (6 cm in length, 6 cm in width, 3 mm in thickness), and the release film was removed. Then, the one obtained by heat-treating at 130 °C for 2 hours to cure the thermosetting resin film was designated as "Sample 1 for transmittance evaluation". Also, the resin film in an uncured state without heat treatment was designated as "Sample 2 for transmittance evaluation". Then, the transmittances of Sample 1 for transmittance evaluation and Sample 2 for transmittance evaluation were measured with an ultraviolet-visible near-infrared spectrophotometer (manufactured by Shimadzu Corporation, UV-3600 series, wavelength range: 185 nm to 2,000 nm, detector unit: direct light reception), using the measurement result of the transmittance of only the glass substrate as the baseline. The measurement wavelength of the transmittance was set to the wavelength of the laser light used in each example and comparative example. In Tables 1 to 3, when "Sample 1 for evaluation" was used, the transmittance of the heat-cured resin layer of "Sample 1 for transmittance evaluation" was listed, and when "Sample 2 for evaluation" was used, the transmittance of the uncured resin layer of "Sample 2 for transmittance evaluation" was listed.

[0087] The results are shown in Tables 1 to 3.

[0088]

Table 1

[0089]

Table 2

[0090]

Table 3

[0091] From Tables 1 to 3, the following can be understood. In Examples 1 to 16 where the wavelength of the laser light is 600 nm or less and the output is less than 2.0 W, it can be seen that the resin layer on the bump top is appropriately removed in all cases. Among these, it can be seen that in Examples 1 to 12 and Examples 15 to 16, the resin layer on the bump top is removed extremely well. On the other hand, in Comparative Examples 3 to 6 where the wavelength of the laser light is more than 600 nm and the output is 2.0 W or more, it can be seen that the resin layer on the bump top is not appropriately removed in any case. Also, for Examples 3 to 6 and Examples 9 to 12, in addition to the resin layer on the bump top being removed extremely well, almost no debris deformation of the bump is observed, and it can be seen that the reliability is excellent.

Explanation of Signs

[0092] 1 Composite sheet 10 Pressure roll (resin layer forming means) thinly covered 11 Base material (constituting the composite sheet) 12 Buffer layer 13 Resin film, resin layer X Support sheet 2 Member with bumps (wafer with bumps) 20 Suction pad (support sheet peeling means) 21 Semiconductor wafer 22 Bump 2A Bump formation surface 2B Back surface of the semiconductor wafer 2a Chip with bumps 3 Dicing tape 4 Substrate 41 Base material (constituting the substrate) 42 Electrode 50 Laser irradiation device LB Laser light 60 Dicing blade 100 Semiconductor device

Claims

1. A step (A) of forming a resin layer on a bump formation surface of a member with bumps on which bumps are formed; A step (B) of irradiating the resin layer with laser light having a wavelength of 600 nm or less at an output of less than 2.0 W to remove the resin layer covering the surface of the bumps; A method for manufacturing a semiconductor device, including these steps.

2. The resin layer is a thermosetting resin layer, The method for manufacturing a semiconductor device according to claim 1, wherein the step (B) is performed at any timing before or after the resin layer is thermally cured.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the laser light is pulsed laser light.

4. The method for manufacturing a semiconductor device according to claim 3, wherein the energy per shot of the pulsed laser light is less than 100 μJ.

5. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the transmittance of the resin layer is 65% or less at the wavelength of the laser light.

6. In the step (B), The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the removal of the resin layer is performed on the resin layer covering the top of the bump.

7. In the step (A), The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the formation of the resin layer on the bump formation surface is performed by attaching a composite sheet in which a resin film for forming the resin layer and a support sheet are laminated to the bump formation surface with the resin film as the attachment surface.

8. The support sheet is a back grind tape, The method for manufacturing a semiconductor device according to claim 7, further including a step (A - BG) of grinding the surface on the side opposite to the bump formation surface of the member with bumps after the resin film of the composite sheet and the bump formation surface are bonded together.

9. The support sheet is a laminate including a base material and a buffer layer, The method for manufacturing a semiconductor device according to claim 7, further including a step (A - BG) of grinding the surface on the side opposite to the bump formation surface of the member with bumps after the resin film of the composite sheet and the bump formation surface are bonded together.

10. After the step (B), The method for manufacturing a semiconductor device according to claim 1 or 2, further including a step (C) of electrically connecting the bumps whose resin layer has been removed and the surface has been exposed in the step (B) and the electrodes of the substrate after the member with bumps is singulated.

11. Resin layer forming means for forming a resin layer on the bump forming surface of a bump-equipped member on which bumps are formed, A laser irradiation device that irradiates the resin layer with laser light to remove the resin layer covering the surface of the bump, A manufacturing apparatus for a semiconductor device comprising the above.

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