Support sleeve for process vessel and associated semiconductor processing furnaces

Abstract

To solve the problem that improved support structures are desirable to reduce particle formation as well as to prevent any particles that are formed from entering a reaction space within a process vessel.SOLUTION: Support sleeves and semiconductor processing furnaces including such support sleeves are disclosed. The support sleeves disclosed include a single support surface for supporting a process vessel within a semiconductor processing furnace. The support sleeves disclosed also include a number of internal gas channels configured for forming a gas seal between the support sleeve and a process vessel supported on the support sleeve.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure generally relates to the fields of semiconductor processing equipment and systems, as well as the manufacture of devices and integrated circuits. More specifically, the present disclosure relates to a support sleeve for supporting a process vessel within a semiconductor processing furnace.

Background Art

[0002] Batch processing of semiconductor substrates is often performed in a semiconductor processing furnace. Such semiconductor processing furnaces are used, for example, generally in high-temperature processes at temperatures exceeding 1000°C. Such semiconductor processing furnaces can include an internal process vessel supported within the furnace by a support structure. Such support structures generally include a plurality of support surfaces that engage the process vessel at various locations to support and position the process vessel within the semiconductor processing furnace.

[0003] However, the process vessel and the support structure are often made of different materials having different coefficients of thermal expansion. Thus, during the thermal cycle of the furnace, increasing stress may be applied to a plurality of contact interfaces between the process vessel and the support structure. Such stress can cause damage to one or more of the process vessel and the support structure, as well as the formation of undesirable particles. Thus, an improved support structure is desirable to reduce particle formation and to prevent any particles formed from entering the reaction space within the process vessel.

[0004] Any discussion, including discussion of problems and solutions described in this section, is included in this disclosure only for the purpose of providing context for the present disclosure. Such discussion should not be construed as an admission that any or all of the information was known at the time the invention was made or otherwise constitutes prior art.

Summary of the Invention

Means for Solving the Problems

[0005] The summary of this invention is presented in a simplified form of selected concepts, which will be further described in detail below. This summary is not necessarily intended to identify the main or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter.

[0006] According to an example of the present disclosure, a support sleeve for supporting a process container is provided, the process container having a ledge protruding from an outer surface of the process container and a base surface for sealing the process container within a furnace for semiconductor processing. In such an example, the support sleeve includes an inner surface and an outer surface, an upper surface constructed and arranged to engage and support the process container with the ledge, and a bottom surface. In such an example, the support container includes a shoulder including an intermediate surface disposed between the upper surface and the bottom surface. In such an example, the intermediate surface extends from the inner surface and is constructed and arranged to form a portion of a diffusion barrier channel between the intermediate surface of the shoulder and the base surface of the process container.

[0007] In some embodiments, the support sleeve is made from a single piece of material.

[0008] In some embodiments, the upper surface of the support sleeve is an annular upper surface extending between the outer surface and the inner surface of the support sleeve.

[0009] In some embodiments, the shoulder is an annular shoulder. In such embodiments, the intermediate surface is an annular surface.

[0010] In some embodiments, the support sleeve further includes a circumferential channel disposed within the support sleeve and in fluid communication with a gas inlet channel.

[0011] In some embodiments, the support also includes a plurality of supply channels disposed within the support sleeve, each supply channel having a first end in fluid communication with the circumferential channel and a second end in fluid communication with a gas injection opening. In such embodiments, each of the gas injection openings extends from the second end of the supply channel through the inner surface of the support sleeve.

[0012] According to further examples of the present disclosure, a support sleeve for supporting a process vessel is provided. In such examples, the support sleeve includes a hollow cylindrical core having an outer surface, an inner surface, a bottom surface, and an annular upper surface extending between the outer surface and the inner surface, the annular upper surface being constructed and arranged as a single support surface for supporting the process vessel during operation. In such examples, the support sleeve includes an annular shoulder extending inwardly from a lower portion of the inner surface, the annular shoulder having an intermediate surface constructed and arranged to form a portion of a diffusion barrier channel between the intermediate surface of the annular shoulder and the base surface of the process vessel when supported on the annular upper surface. In such examples, the support sleeve is disposed within a single piece of support sleeve and includes a circumferential channel in fluid communication with a gas inlet port extending outwardly from the outer surface. In such examples, the support sleeve includes a plurality of supply channels disposed within the hollow cylindrical core, each supply channel having a first end in fluid communication with the circumferential channel and a second end in fluid communication with a gas injection opening. In such examples, each of the gas injection openings extends from the second end of the supply channel through the inner surface of the single piece of support sleeve.

[0013] According to additional examples of the present disclosure, a semiconductor processing furnace is provided. In such examples, the semiconductor processing furnace includes a support sleeve that includes an inner surface, an outer surface, an upper surface, a bottom surface, and an intermediate surface disposed between the upper surface and the bottom surface, and the intermediate surface extends inwardly from the inner surface of the support sleeve. In such examples, the semiconductor processing furnace includes a process vessel on the support sleeve, and the process vessel includes a base surface and a ledge protruding from the outer surface of the process vessel. In such examples, the lower side of the ledge contacts the upper surface of the support sleeve and the base surface of the process vessel, and the intermediate surface of the support sleeve defines a part of a diffusion barrier channel for gas-sealing the support sleeve from the process vessel.

[0014] In some embodiments, the support sleeve has a hollow cylindrical core.

[0015] In some embodiments, the upper surface is an annular upper surface. In such examples, the intermediate surface is the upper surface of an annular shoulder. In such examples, the intermediate surface of the support sleeve is a single support surface for supporting the process vessel on the intermediate surface.

[0016] In some embodiments, the support sleeve of the semiconductor processing furnace includes a circumferential channel disposed within the support sleeve and in fluid communication with a gas inlet channel.

[0017] In some embodiments, the support sleeve of the semiconductor processing furnace includes a plurality of supply channels disposed within the support sleeve, and each supply channel has a first end in fluid communication with the circumferential channel and a second end in fluid communication with a gas injection opening. In such examples, each of the gas injection openings extends through the inner surface of the support sleeve from the second end of the supply channel.

[0018] In some embodiments, the semiconductor processing furnace includes a first portion of a diffusion barrier channel that includes a channel formed between the inner surface of the support sleeve and the outer surface of the process vessel.

[0019] In some embodiments, the semiconductor processing furnace includes a second portion of a diffusion barrier channel that includes a channel formed between the base surface of the process vessel and the intermediate surface of the support sleeve.

[0020] In some embodiments, the support vessel of the semiconductor processing furnace is made from a single piece of material.

[0021] For the purpose of summarizing the invention and advantages achieved over the prior art, certain objects and advantages of the invention are described above herein. It should of course be understood that not necessarily all such objects or advantages are achieved in accordance with any particular embodiment of the invention. Accordingly, those skilled in the art will recognize that the invention may be embodied or practiced in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein, without necessarily achieving other objects or advantages as may be taught or suggested herein.

[0022] All of these embodiments are intended to be within the scope of the invention disclosed herein. Those skilled in the art will readily recognize from the following detailed description of certain embodiments of the invention, with reference to the accompanying drawings, that these and other embodiments are not limited to any particular embodiment disclosed.

[0023] To easily identify the discussion of any particular element or action, the most significant digit of the reference number refers to the figure number in which that element is first introduced.

[0024] A more complete understanding of embodiments of the present disclosure may be obtained by reference to the detailed description and claims for the invention, when considered in connection with the following exemplary drawings.

Brief Description of the Drawings

[0025]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

[0026] It will be understood that the elements in the figures are illustrated for simplicity and clarity and are not necessarily drawn to scale. For example, the dimensions of some of the elements in the figures may be exaggerated relative to other elements to assist in the understanding of the illustrated embodiments of the present disclosure.

DETAILED DESCRIPTION OF THE INVENTION

[0027] The following description of exemplary embodiments of the apparatus and system is merely exemplary and is intended for illustrative purposes only. The following description is not intended to limit the scope of the present disclosure or the scope of the claims. Further, the listing of numerous embodiments having the recited features or steps is not intended to exclude other embodiments having additional features or steps, or other embodiments incorporating different combinations of the recited features or steps.

[0028] As used herein, the term "substrate" can refer to any underlying material that can be used to form a device, circuit, or film by a method according to an embodiment of the present disclosure, or on which a device, circuit, or film can be formed. The substrate can include a bulk material such as silicon (e.g., single crystal silicon), other Group IV materials such as germanium, or other semiconductor materials such as Group II-VI or Group III-V semiconductor materials, and can include one or more layers on or under the bulk material. Further, the substrate can include various features such as recesses, protrusions, and the like formed in or on at least a portion of the layers of the substrate. By way of example, the substrate can include a bulk semiconductor material and a layer of insulating or dielectric material on at least a portion of the bulk semiconductor material. Further, the term "substrate" can refer to any underlying material that may be used or on which a device, circuit, or film may be formed. The "substrate" may be continuous or discontinuous, rigid or flexible, solid or porous. The "substrate" may be in any form such as a powder, plate, or workpiece. A substrate in the form of a plate may include wafers of various shapes and sizes. The substrate may be made of materials such as, for example, silicon, silicon germanium, silicon oxide, gallium arsenide, gallium nitride, and silicon carbide. A continuous substrate may extend beyond the boundaries of the process chamber in which the deposition process occurs and may also move through the process chamber, whereby the process is continued until it reaches the end of the substrate. A continuous substrate may be supplied from a continuous substrate supply system that enables the manufacture and output of the continuous substrate in any suitable form. Non-limiting examples of continuous substrates may include sheets, non-woven membranes, rolls, foils, webs, flexible materials, bundles of continuous filaments or fibers (i.e., ceramic fibers or polymer fibers). A continuous substrate may also include a carrier or sheet on which a discontinuous substrate is placed. By way of example, the substrate may include a semiconductor material.The semiconductor material may include or be used to form one or more of the source, drain, or channel regions of the device. The substrate may further include an interlayer dielectric (e.g., silicon oxide) and / or a high-k material layer that overlays the semiconductor material. In this context, a high-k material (or high-dielectric material) is a material having a dielectric constant greater than that of silica.

[0029] In a semiconductor processing furnace, generally, an internal process chamber in which various semiconductor manufacturing processes are performed is used. The process chamber is often made of silicon carbide (SiC) to withstand the high temperatures and thermal cycle operations performed in the furnace.

[0030] The process chamber is generally supported within the furnace by a support structure, herein referred to as a support sleeve. Previous support sleeves often included multiple support surfaces configured to engage and support the process chamber. However, the support sleeve is often made of one or more materials having a lower thermal conductivity than the silicon carbide process chamber to prevent heat conduction away from the process chamber. This difference in materials can result in a difference in the thermal expansion coefficients of the process chamber and the support sleeve, which causes high stresses at the multiple contact interfaces between the process chamber and the support sleeve during the thermal cycle of the semiconductor processing furnace. This stress can not only adversely affect the processes performed within the process chamber but also generate particles that can result in more frequent maintenance to maintain the operation of the semiconductor processing furnace. Further, to prevent gas exchange between the process chamber and the external environment, generally one or more seals are used. Often, such seals take the form of physical seals. For example, the seal can be formed by the contact surface of the process chamber and the underlying support structure. However, such physical seals may not be completely airtight and, as a result, may allow gas to leak into and / or out of the process chamber.

[0031] Accordingly, various embodiments of the present disclosure provide a support sleeve having a single support surface for supporting a process vessel within a furnace. By using a single support surface, the number of interfaces between the support sleeve and the process vessel is reduced, resulting in a reduction in particle formation and a reduction in the need for frequent maintenance of the furnace. Further, various embodiments of the present disclosure provide a support sleeve that includes a number of integrated gas channels capable of supplying a uniform gas flow directed inwardly from the inner surface of the support sleeve, where "inwardly" as used herein can refer to a direction toward the center of the support sleeve, i.e., a direction toward the process vessel. Such a gas flow from the support sleeve forms a diffusion barrier that forms a non-physical seal (i.e., a gas seal) between the process vessel and the support sleeve. The use of such a gas seal eliminates the need for a completely leak-free physical seal between the process vessel and the support sleeve and further enables the use of a support sleeve having a single support surface.

[0032] Referring now to the figures, FIG. 1 is a simplified schematic view of a semiconductor processing furnace 100 according to an example of the present disclosure, including a support sleeve 102. The semiconductor processing furnace 100 includes a process vessel 104 supported by the support sleeve 102, and the support sleeve 102 is supported by a flange 106. The process vessel 104 supported by the support sleeve 102 is heated by a heater 108, and a separation material 110 is disposed between the heater 108 and an outer shell 112. A process region, i.e., a reaction space 114, where process gases can interact with a substrate (not shown) during a semiconductor manufacturing process, is defined by the process vessel 104 (open at its bottom and top ends and located inside the outer shell 112).

[0033] As shown in FIG. 1, process vessel 104 includes a ledge 116 that protrudes from the outer surface 118 of process vessel 104. According to an example of the present disclosure, the interface between ledge 116 and the upper surface of support sleeve 102 is a single support interface between processing process vessel 104 and support sleeve 102, as will be described in more detail below. Further, support sleeve 102 includes a gas inlet port in fluid communication with a plurality of gas injection openings 122 for forming a diffusion barrier (i.e., a gas seal) between process vessel 104 and support sleeve 102, as will be described in more detail below.

[0034] FIGS. 2, 3, 4, and 5 show various views of the support sleeve of the present disclosure. FIG. 2 shows a cross-sectional view of an exemplary support sleeve according to an embodiment of the present disclosure. FIG. 3 shows a plan view of an exemplary support sleeve according to an embodiment of the present disclosure. FIG. 4 shows a perspective view of an exemplary support sleeve including a partial cutaway according to an embodiment of the present disclosure, and FIG. 5 shows an enlarged view of a portion of FIG. 4 according to an embodiment of the present disclosure.

[0035] Referring more particularly to FIGS. 2-5, the support sleeve 102 includes an inner surface 204, an outer surface 206, a bottom surface 210, and a top surface 208. In such examples, the surfaces 204, 206, 208, and 210 define the core of the support sleeve 102. In some embodiments, the core of the support sleeve 102 comprises a hollow cylinder, i.e., the support sleeve 102 comprises a hollow cylindrical core. In some embodiments, the support sleeve 102 is made from a single piece of material. In such embodiments, the support sleeve 102 is a single-piece support sleeve. In some embodiments, the support sleeve 102 is made from a plurality of pieces of material. In such embodiments, the support sleeve 102 is a multi-piece support sleeve. In some embodiments, the support sleeve 102 is made from quartz. In some embodiments, the support sleeve 102 is made from a single piece of quartz. In some embodiments, the support sleeve 102 is made from silicon carbide. In some embodiments, the support sleeve 102 is made from a single piece of silicon carbide. In an example where the support sleeve is a multi-piece support sleeve, each of the plurality of pieces of material used to make the plurality of pieces may include quartz and / or silicon carbide.

[0036] According to an example of the present disclosure, the support sleeve 102 includes a top surface 208. In such examples, the top surface 208 of the support sleeve 102 is constructed and arranged to engage and support a process vessel, as will be described in more detail below. According to an example of the present disclosure, the top surface 208 is a single support surface for supporting a process vessel thereon. In such examples, the support sleeve 102 does not include any additional surfaces that contact the process vessel. In some embodiments, the top surface 208 comprises an annular top surface that extends between the outer surface 206 and the inner surface 204. In such embodiments, the annular top surface is constructed and arranged to support a process vessel within a semiconductor processing furnace.

[0037] According to an example of the present disclosure, the support sleeve 102 includes a shoulder 212 that extends inwardly (i.e., towards the center of the support sleeve) from the inner surface 204 of the support sleeve. In such an example, the shoulder 212 includes an intermediate surface 214 disposed between the upper surface 208 and the bottom surface 210. In such an example, the intermediate surface 214 is the upper surface of the shoulder 212 and extends inwardly from the inner surface 204 of the support sleeve 102. In some embodiments, the shoulder 212 is an annular shoulder that extends inwardly from the lower portion of the inner surface 204. In such an example, the annular shoulder is concentric with the annular upper surface, and the annular shoulder and the annular upper surface have the same center point (as shown in FIG. 3). In some embodiments, the shoulder 212, particularly the intermediate surface 214 of the shoulder 212, is constructed and arranged to form an opening between the intermediate surface 214 and the base surface of the process vessel, as will be described in more detail below.

[0038] The support sleeve of the present disclosure also includes an integrated gas channel for creating a diffusion barrier between the process vessel and the support sleeve. Briefly stated, the support sleeve of the present disclosure includes a gas inlet port that includes a gas inlet channel for injecting a sealing gas into a circumferential channel disposed in the support sleeve. The internal circumferential channel distributes the sealing gas along the entire circumference of the support sleeve. The sealing gas flows from the circumferential channel into a plurality of supply channels that are distributed around the support sleeve, and the supply channels extend into the inner surface of the support sleeve to convey the sealing gas to a plurality of gas injection openings through the inner surface of the support sleeve. The plurality of gas injection openings can distribute the sealing gas into the hollow center of the support sleeve to form a diffusion barrier with the process vessel. Below, the elements of the support sleeve of the present disclosure that enable the formation of the diffusion barrier will be described in more detail.

[0039] According to an example of the present disclosure, the support sleeve 102 includes a gas inlet port 120 (see FIGS. 3 and 4). In such examples, the gas inlet port 120 extends outwardly from the outer surface 206 of the support sleeve (i.e., away from the center of the support sleeve). The gas inlet port 120 includes a gas inlet channel 302 disposed therein, as shown in FIG. 3 by the short dashed line, indicating that the gas inlet channel 302 is within the core volume of the support sleeve 102. In some embodiments, the gas inlet channel 302 is in fluid communication with a circumferential channel disposed within the support sleeve, as described in more detail below. The gas inlet port 120 is used to introduce one or more sealing gases into the support sleeve 102. In some embodiments, the support sleeve 102 also includes an exhaust port 304 that includes an exhaust channel 306 used for exhausting gas from the support sleeve.

[0040] According to an example of the present disclosure, the support sleeve 102 includes a circumferential channel 218 disposed within the support sleeve 102 (see FIGS. 3 and 4). In such embodiments, the circumferential channel 218 is in fluid communication with the gas inlet channel 302 of the gas inlet port 120, enabling a sealing gas to be introduced from an external source (not shown) through the gas inlet channel 302 into the circumferential channel 218. The circumferential channel 218 extends radially around the inside of the support sleeve, enabling an even distribution of the sealing gas around the support sleeve.

[0041] According to an example of the present disclosure, the circumferential channel 218 is shown in FIG. 3 by the dashed line to indicate that the circumferential channel 218 is included in the core volume of the support sleeve 102 and is formed within the hollow cylindrical core of the support sleeve 102, as shown in the cutaway of FIG. 4. In some embodiments, the circumferential channel 218 is disposed between the outer surface 206 and the inner surface 204. In such examples, the circumferential channel 218 may be disposed between the outer surface 206 and the shoulder side surface 216. In some embodiments, the circumferential channel 218 is disposed between the bottom surface 210 of the support sleeve and the intermediate surface 214 of the shoulder 212.

[0042] According to an example of the present disclosure, the circumferential channel 218 has a substantially rectangular profile, as shown by the channel profile 502 of FIG. 5. In such embodiments, the circumferential channel 218 has a channel width of 5 mm to 20 mm and a channel height of 10 mm to 30 mm. The circumferential channel 218 is not limited to a rectangular profile. For example, the channel profile can be a square profile or a circular profile.

[0043] According to an example of the present disclosure, the support sleeve 102 further includes a plurality of supply channels 220 disposed within the support sleeve 102. In such embodiments, the plurality of supply channels 220 are in fluid communication with the circumferential channel 218 to enable introducing sealing gas from an external source (not shown) through the gas inlet channel 302 into the circumferential channel 218 and subsequently into the plurality of supply channels 220.

[0044] According to an example of the present disclosure, as shown in the cut-away view of FIG. 4, it shows that the plurality of supply channels 220 are within the core volume of the support sleeve 102, and the plurality of supply channels 220 are formed within the hollow cylindrical core of the support sleeve 102 as shown in FIG. 2 by dashed lines. In some embodiments, the plurality of supply channels 220 are disposed between the outer surface 206 and the inner surface 204. In some embodiments, the plurality of supply channels 220 are oriented perpendicular to the upper surface 208 of the support sleeve 102. In some embodiments, the supply channels 220 are oriented parallel to both the outer surface 206 and the inner surface 204 of the support sleeve 102. In such embodiments, the supply channels 220 are vertical supply channels. In some embodiments, the plurality of supply channels 220 are equally spaced and distributed in a radially spaced relationship within the hollow cylindrical core of the support sleeve around the inner surface 204. In some embodiments, the supply channels 220 have a circular profile. In such embodiments, the plurality of supply channels 220 have a diameter of 2 mm to 5 mm. In some embodiments, the supply channels 220 have a length of 20 mm to 80 mm. According to an example of the present disclosure, the support sleeve 102 further includes a plurality of gas injection openings 122 disposed within the support sleeve 102. In such embodiments, each of the plurality of gas injection openings 122 is in fluid communication with a gas supply channel 220 to allow a sealing gas to be introduced from an external source (not shown) through a gas inlet channel 302 into the circumferential channel 218, into the supply channel 220, and into the gas injection opening 122. In such examples, each of the supply channels 220 has a first end in fluid communication with the circumferential channel 218 and a second end in fluid communication with the gas injection opening 122.

[0045] According to an example of the present disclosure, each of the plurality of gas injection openings 122 extends, for example, as shown in FIG. 4, from a supply channel through the inner surface 204 of the support sleeve 102. In other words, the gas injection opening 122 provides a channel for the sealing gas to flow from the supply channel, through the inner surface of the support sleeve, and out of the support sleeve.

[0046] According to an example of the present disclosure, as shown in FIGS. 4 and 5, a plurality of gas injection openings 122 are formed within the hollow cylindrical core of the support sleeve 102. In some embodiments, the gas injection openings 122 are disposed between the outer surface 206 and the inner surface 204. In some embodiments, the gas injection openings 122 are oriented parallel to the upper surface 208 of the support sleeve 102. In some embodiments, the gas injection openings 122 are oriented perpendicular to both the outer surface 206 and the inner surface 204 of the support sleeve 102. In such embodiments, the gas injection openings are horizontal gas injection openings. In some embodiments, the plurality of gas injection openings 122 are equally spaced around the inner surface 204 of the support sleeve 102 and are distributed in a radially spaced relationship. In some embodiments, the plurality of gas injection openings 122 have a circular profile. In such embodiments, the gas injection openings 122 have a diameter of 1 mm to 3 mm.

[0047] Embodiments of the present disclosure also include a semiconductor processing furnace that includes a support sleeve, as described in detail above. To better illustrate embodiments of the present disclosure related to the semiconductor processing furnace and the configuration of the process container relative to the support sleeve, FIG. 6 shows an enlarged cross-sectional view of a process container 104 supported on a support sleeve 102.

[0048] According to an example of the present disclosure, referring to FIG. 6, the process container 104 includes a ledge 116 that protrudes from the outer surface 118 of the process container 104. In such an example, the lower side 602 of the ledge 116 contacts the upper surface 208 of the support sleeve 102. In some embodiments, the upper surface 208 of the support sleeve has an annular upper surface, and the lower side 602 of the ledge 116 has an annular surface. In some embodiments, the process container 104 is supported by a single surface of the support sleeve 102, i.e., a single support surface. In such an example, the single support surface comprises the upper surface 208 of the support sleeve 102. In such an example, the single support surface supports the process container 104 at the lower side 602 of the ledge 116 that protrudes from the outer surface 118 of the process container 104. In such an example, the process container 104 is not supported by any additional surface of the support sleeve 102.

[0049] According to an additional example of the present disclosure, referring to FIG. 6, the process container 104 includes a base surface 604. In such an example, the base surface 604 comprises the bottom or lowermost part of the process container 104. As shown in FIG. 6, the base surface 604 of the process container 104 is not supported by the support sleeve 102. Instead, the base surface 604 is separated from the intermediate surface 214 of the support sleeve 102 by a predetermined distance, e.g., a vertical separation is maintained between the base surface 604 and the intermediate surface 214.

[0050] More specifically, referring to FIG. 6, the sealing gas can be introduced into the support sleeve 102 and radially distributed around the support sleeve 102 by the circumferential channel 218. The plurality of supply channels 220 direct the barrier gas from the circumferential channel 218 to the plurality of gas injection openings 122, enabling the flow of the sealing gas from the inside to the outside of the support sleeve 102. According to an additional example of the present disclosure, a diffusion barrier channel can be formed between the support sleeve 102 and the process container 104 supported thereon. In such an example, a first portion 606 of the diffusion barrier channel comprises a channel formed between the inner surface 204 of the support sleeve 102 and the outer surface 118 of the process container 104. Further in such an example, a second portion 608 of the diffusion barrier channel comprises a channel formed between the base surface 604 of the process container 104 and the intermediate surface 214 of the support sleeve 102. The first portion 606 of the diffusion barrier channel and the second portion 608 of the diffusion barrier channel are in fluid communication with the plurality of gas injection openings 122 (similarly, in fluid communication with the plurality of supply channels 220, the circumferential channel 218, and the gas inlet channel 302). Thus, the sealing gas can be introduced into the support sleeve and injected into the diffusion barrier channel including the first portion 606 and the second portion 608 of the diffusion barrier channel from the support sleeve 102 through the plurality of gas injection openings 122. According to an example of the present disclosure, the first portion of the diffusion barrier channel has a channel width of 1 mm to 5 mm. According to a further example of the present disclosure, the second portion 608 of the diffusion barrier channel has a channel width of 1 mm to 5 mm.

[0051] For the purpose of summarizing the invention and advantages achieved over the prior art, certain objects and advantages of the invention are described hereinabove. It should of course be understood that not necessarily all of such objects or advantages need to be achieved in accordance with any particular embodiment of the invention. Thus, for example, one skilled in the art will recognize that the invention may be embodied or practiced in a manner that achieves or optimizes one advantage or group of advantages as taught or suggested herein, without necessarily achieving other purposes or advantages that may be taught or suggested herein.

[0052] All of these embodiments are intended to be within the scope of the invention disclosed herein. To those skilled in the art, these and other embodiments will be readily apparent from the following detailed description of certain embodiments of the invention with reference to the accompanying drawings, and the invention is not limited to any particular embodiment disclosed.

Claims

1. 1. A support sleeve for supporting a process vessel having a ledge protruding from an outer surface of the process vessel and a base surface for sealing the process vessel in a furnace for semiconductor processing, the support sleeve comprising: [0023] An interior surface and an exterior surface; an upper surface constructed and arranged to engage and support the process vessel at the ledge; The bottom surface, a shoulder including an intermediate surface disposed between the top surface and the bottom surface, the intermediate surface extending from the interior surface and constructed and arranged to form a portion of a diffusion barrier channel between the intermediate surface of the shoulder and the base surface of the process vessel.

2. The support sleeve of claim 1 , wherein the support sleeve is made from a single piece of material.

3. The support sleeve of claim 2 , wherein the upper surface is an annular upper surface extending between the outer surface of the support sleeve and the inner surface of the support sleeve.

4. The support sleeve of claim 3 , wherein the shoulder comprises an annular shoulder.

5. The support sleeve of claim 4 , wherein the intermediate surface comprises an annular surface.

6. The support sleeve of claim 1 , further comprising a circumferential channel disposed within the support sleeve and in fluid communication with a gas inlet channel.

7. The support sleeve of claim 6, further comprising a plurality of supply channels disposed within the support sleeve, each supply channel having a first end in fluid communication with the circumferential channel and a second end in fluid communication with a gas injection opening.

8. The support sleeve of claim 7 , wherein each of the gas injection openings extends from the second end of the supply channel through the interior surface of the support sleeve.

9. A support sleeve for supporting a process vessel, comprising: a hollow cylindrical core having an exterior surface, an interior surface, a bottom surface, and an annular upper surface extending between said exterior surface and said interior surface, said annular upper surface constructed and arranged as a single support surface for supporting said process vessel during operation; an annular shoulder extending inwardly from a lower portion of the interior surface, the annular shoulder having an intermediate surface constructed and arranged to form a portion of a diffusion barrier channel between an intermediate surface of the annular shoulder and a base surface of the process vessel when supported on the annular upper surface; a circumferential channel disposed within the support sleeve in fluid communication with a gas inlet port extending outwardly from the exterior surface; a plurality of supply channels disposed within the hollow cylindrical core, each supply channel having a first end in fluid communication with the circumferential channel and a second end in fluid communication with a gas injection opening, each of the gas injection openings extending from the second end of the supply channel through the interior surface of the single-piece support sleeve.

10. a support sleeve having an inner surface, an outer surface, a top surface, a bottom surface, and an intermediate surface disposed between the top surface and the bottom surface, the intermediate surface extending inwardly from the inner surface of the support sleeve; a process vessel overlying the support sleeve, the process vessel including a base surface and a ledge protruding from an outer surface of the process vessel, an underside of the ledge contacting the upper surface of the support sleeve and the base surface of the process vessel, and the intermediate surface of the support sleeve defining a portion of a diffusion barrier channel for gas-tightly sealing the support sleeve from the process vessel.

11. 11. The semiconductor processing furnace of claim 10, wherein the support sleeve has a hollow cylindrical core.

12. The semiconductor processing furnace of claim 11 , wherein the upper surface is an annular upper surface.

13. 13. The semiconductor processing furnace of claim 12, wherein the intermediate surface is an upper surface of an annular shoulder.

14. 14. The semiconductor processing furnace of claim 13, wherein the intermediate surface of the support sleeve is a single support surface for supporting the process vessel on the intermediate surface.

15. The semiconductor processing furnace of claim 10 further comprising a circumferential channel disposed within the support sleeve and in fluid communication with the gas inlet channel.

16. 16. The semiconductor processing furnace of claim 15, further comprising a plurality of supply channels disposed within the support sleeve, each supply channel having a first end in fluid communication with the circumferential channel and a second end in fluid communication with a gas injection opening.

17. 17. The semiconductor processing furnace of claim 16, wherein each of the gas injection openings extends from the second end of the supply channel through the interior surface of the support sleeve.

18. 11. The semiconductor processing furnace of claim 10, wherein the first portion of the diffusion barrier channel comprises a channel formed between the inner surface of the support sleeve and the outer surface of the process vessel.

19. 11. The semiconductor processing furnace of claim 10, wherein the second portion of the diffusion barrier channel comprises a channel formed between the base surface of the process vessel and the intermediate surface of the support sleeve.

20. The semiconductor processing furnace of claim 10 , wherein the support sleeve is fabricated from a single piece of material.

Images