Cup, substrate processing equipment and substrate processing method

Abstract

To achieve a good treatment process by adjusting the airflow to a substrate in cups used in substrate processing equipment.SOLUTION: Cups used in substrate processing equipment that supplies processing fluid to a substrate to process the substrates have an opening in the upper part of the substrate for receiving and transferring the substrate, a suction port that draws in gas flowing from above the cup toward the cup, and an exhaust port to discharge gases suctioned from the suction port, and the suction port opens upward at the periphery of the opening and the flow path from the opening to the exhaust port and the flow path from the suction port to the exhaust port are connected below the opening.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present disclosure relates to a cup, a substrate processing apparatus, and a substrate processing method.

Background Art

[0002] Patent Document 1 discloses a liquid processing apparatus that supplies a coating liquid from a coating liquid supply unit to the surface of a substrate held substantially horizontally on a substrate holding unit surrounded by a cup body, and performs liquid processing on the surface of the substrate through a coating liquid nozzle. This liquid processing apparatus includes a nozzle bath for placing and waiting for the coating liquid nozzle, a nozzle transfer mechanism for transferring the coating liquid nozzle between above the substrate held by the substrate holding unit and the nozzle bath, imaging means for imaging the tip of the coating liquid nozzle being transferred by this nozzle transfer mechanism, determination means for determining the occurrence of liquid dripping or dropping of the coating liquid from the tip based on the imaging result by this imaging means, and control means for executing a coping operation on the coating supply unit and / or the nozzle transfer mechanism when it is determined by the determination means that liquid dripping or dropping of the coating liquid has occurred.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] The technology according to the present disclosure realizes a good processing process by adjusting the airflow with respect to the substrate in the cup used in the substrate processing apparatus.

Means for Solving the Problems

[0005] One aspect of the present disclosure is a cup used in a substrate processing apparatus that supplies a processing liquid to a substrate and processes the substrate, the cup having an opening that is open upward for transferring the substrate, a suction port that sucks gas flowing from above the cup toward the cup, and an exhaust port that discharges the gas sucked from the suction port. The suction port opens upward on the outer peripheral side of the opening, and a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening.

Advantages of the Invention

[0006] According to the present disclosure, a good processing process can be realized by adjusting the airflow with respect to the substrate in the cup used in the substrate processing apparatus.

Brief Description of the Drawings

[0007]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Modes for Carrying Out the Invention

[0008] In the photolithography process in the manufacturing process of semiconductor devices and the like, a predetermined processing liquid is supplied onto a substrate such as a semiconductor wafer (hereinafter referred to as "wafer"), and the substrate is processed, that is, liquid processing is performed. The predetermined processing liquid is, for example, a developer or a coating liquid for forming a coating film.

[0009] In the above-described liquid processing, the substrate is rotated in order to diffuse the processing liquid supplied to the substrate and to discharge the processing liquid on the substrate. In a liquid processing apparatus that performs liquid processing, that is, a substrate processing apparatus, a container called a cup is provided to suppress the scattering of the processing liquid from the surface of the rotating substrate to the surroundings. Further, since the processing liquid may scatter in a mist form from the peripheral edge of the rotating substrate, exhaust is performed from the bottom of the cup so that the mist does not rise above the cup and contaminate the outside of the cup.

[0010] By the way, in the space where the cup in the liquid processing apparatus is located, when exhausting from the bottom of the cup as described above, an air flow is generated from above the cup toward the exhaust port provided at the bottom of the cup. Due to the air flow, in the vicinity of the surface of the substrate, the atmosphere flows from the central portion of the substrate toward the peripheral portion, and this atmosphere is sucked from the peripheral portion of the cup into the exhaust passage. Further, when the substrate is rotating, the gas directed toward the central portion of the substrate is discharged from the peripheral portion of the substrate due to the rotation of the substrate. For these reasons, during exhaust in the cup, the air flow becomes stronger at the peripheral portion of the substrate than at the central portion of the substrate.

[0011] In the conventional cup structure, as described above, since the air flow at the peripheral portion of the substrate is stronger than that at the central portion of the substrate, the temperature at the peripheral portion of the substrate tends to be higher than that at the central portion of the substrate. As a result, for example, when a developer having a high sensitivity to temperature is used, the development results may be different between the peripheral portion and the central portion of the substrate. That is, in the conventional cup structure, due to the air flow to the substrate in the cup, a good processing process may not be obtained.

[0012] Therefore, the technology according to the present disclosure realizes a good processing process by adjusting the airflow with respect to the substrate in the cup.

[0013] Hereinafter, a substrate processing apparatus according to the present embodiment and a cup included in the substrate processing apparatus will be described with reference to the drawings. In the present specification and the drawings, elements having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

[0014] <Developing processing apparatus> FIG. 1 and FIG. 2 are a longitudinal sectional view and a transverse sectional view respectively showing the outline of the configuration of a developing processing apparatus as a substrate processing apparatus according to the present embodiment.

[0015] The developing processing apparatus 1 in FIGS. 1 and 2 supplies a developing solution as a processing solution to a wafer W as a substrate to process the wafer W. The developing processing apparatus 1 has a processing container 10 that can be sealed inside. A carry-in / outlet (not shown) for the wafer W is formed on the side surface of the processing container 10.

[0016] Inside the processing container 10, a spin chuck 20 is provided as a substrate holding unit that holds and rotates the wafer W. The spin chuck 20 is connected to a chuck driving unit 21 as a rotation mechanism. The chuck driving unit 21 rotates the spin chuck 20 around a vertical axis, thereby rotating the wafer W held by the spin chuck 20 around the vertical axis. The chuck driving unit 21 has, for example, a motor or the like as a driving source that generates a driving force for driving the rotation of the spin chuck 20. Further, the chuck driving unit 21 raises and lowers the spin chuck 20, thereby raising and lowering the wafer W held by the spin chuck 20. The chuck driving unit 21 has, for example, a cylinder or the like as a driving source that generates a driving force for driving the raising and lowering of the spin chuck 20.

[0017] In the area on the back side of the wafer W held by the spin chuck 20, a plurality (for example, three) of lifting pins (not shown) are provided. The lifting pins are lifting members for transferring the wafer W between the wafer transfer mechanism outside the developing apparatus 1 and the spin chuck 20. The lifting pins are vertically movable by a pin driving unit (not shown) having a motor, a cylinder, or the like.

[0018] Further, inside the processing container 10, a cup 30 that houses the spin chuck 20 and is exhausted from the bottom is provided. The cup 30 is a container for receiving and collecting the liquid scattered or dropped from the wafer W. Details of the cup 30 will be described later.

[0019] On the negative X-direction side (downward direction in FIG. 2) of the cup 30, a rail 100 extending along the Y direction (left - right direction in FIG. 2) is formed. The rail 100 is formed, for example, from the outside on the negative Y - direction side (left direction in FIG. 2) of the cup 30 to the outside on the positive Y - direction side (right direction in FIG. 2) of the cup 30. Arms 101 and 102 are provided on the rail 100.

[0020] On the arm 101, a developing solution nozzle 103 as a processing liquid supply unit for supplying a resist solution as a processing liquid is supported. Specifically, the developing solution nozzle 103 supplies the developing solution to the wafer W held by the spin chuck 20. Further, the developing solution nozzle 103 is formed in a rectangular tube shape having a discharge port for the developing solution on its lower surface. The discharge port of the developing solution nozzle 103 is formed in a rectangular shape in plan view, and the length in the longitudinal direction of the discharge port is substantially the same as the diameter of the wafer W.

[0021] The developing solution nozzle 103 may be referred to as a liquid - contact nozzle. The liquid - contact nozzle is a nozzle having a discharge port for discharging the developing solution and a lower end surface that spreads laterally from the discharge port and is substantially parallel to the surface of the wafer W.

[0022] The arm 101 is movable along the rail 100 by the nozzle driving unit 104. As a result, the developing solution nozzle 103 can move from the standby unit 105 installed outside the positive Y-direction side of the cup 30 to above the center of the wafer W in the cup 30. Further, the arm 101 can move up and down by the nozzle driving unit 104, and the height of the developing solution nozzle 103 can be adjusted. As a driving source for generating a driving force for moving the first arm 101 along the rail 100 and for moving the arm 101 up and down, for example, it has a motor, a cylinder, or the like.

[0023] The arm 102 supports a rinse liquid nozzle 106 as another processing liquid supply unit that supplies a rinse liquid as a processing liquid. Specifically, the rinse liquid nozzle 106 supplies a rinse liquid to the wafer W held by the spin chuck 20. The arm 101 is movable along the rail 100 by the nozzle driving unit 107. As a result, the rinse liquid nozzle 106 can move from the standby unit 108 installed outside the negative Y-direction side of the cup 30 to above the center of the wafer W in the cup 30. Further, the arm 101 can move up and down by the nozzle driving unit 104, and the height of the developing solution nozzle 103 can be adjusted. As a driving source for generating a driving force for moving the first arm 101 along the rail 100 and for moving the arm 101 up and down, for example, it has a motor, a cylinder, or the like.

[0024] The developing solution nozzle 103 and the rinse liquid nozzle 106 are each connected to a supply source of the developing solution and the rinse liquid via a flow rate control unit (not shown). The developing solution and the rinse liquid from the above supply source are each adjusted in their flow rates by the flow rate control unit, supplied to the developing solution nozzle 103 and the rinse liquid nozzle 106, and discharged onto the wafer W on the spin chuck 20 through the nozzles 103, 106. The flow rate control unit has, for example, various valves and a mass flow controller.

[0025] Further, as shown in FIG. 1, an exhaust port 11 is formed in the bottom wall of the processing container 10. An exhaust pipe 12 for exhausting the inside of the processing container 10 is connected to the exhaust port 11. The exhaust pipe 12 is connected to an exhaust mechanism 150 having an exhaust pump or the like via a main exhaust pipe 151.

[0026] Also, an air flow forming unit 200 is provided above the cup 30 in the processing container 10. The air flow forming unit 200 generates a downward air flow from above the cup 30. The air flow forming unit 200 has a fan filter unit (FFU) 201 as a blowing portion. The FFU 201 is provided above the cup 30 and blows out gas (specifically, clean air) downward.

[0027] The above-described developing apparatus 1 is provided with a control unit U. The control unit U is a computer including a processor such as a CPU and a memory, and has a program storage unit (not shown). A program for realizing wafer processing performed using the developing apparatus 1 is stored in the program storage unit. Note that the above program may be recorded on a computer-readable storage medium H and installed from the storage medium H into the control unit U. The storage medium H may be temporary or non-temporary. Also, part or all of the program may be realized by dedicated hardware (circuit board).

[0028] <Structure of the cup 30> Next, details of the structure of the cup 30 will be described with reference to FIGS. 1 and 2 and using FIGS. 3 and 4. FIG. 3 is a partially enlarged view of the cup 30 shown in FIG. 1. FIG. 4 is an explanatory view schematically showing the air flow during exhaust. In FIG. 4, the thick black arrows indicate the air flow, and the thickness of the arrows indicates the magnitude of the gas flow rate. As shown in FIG. 1, the cup 30 includes an outer cup 31 and an inner cup 32.

[0029] The outer cup 31 is a component that constitutes the outer wall of the cup 30. The outer cup 31 has an outer peripheral wall 33 and an inclined wall 34. The outer peripheral wall 33 is formed in a cylindrical shape. The inclined wall 34 is formed in a cylindrical shape and in an annular shape in plan view. The lower end portion of the inclined wall 34 is located at a position lower than the wafer W held by the spin chuck 20 and is connected to the upper end portion of the outer peripheral wall 33. The upper end portion of the inclined wall 34 is located at a position lower than the wafer W held by the spin chuck 20. Further, the upper end portion of the inclined wall 34 is located inward of the lower end portion, and the inclined wall 34 inclines inward from the lower end portion toward the upper end portion.

[0030] The inner cup 32 is provided on the inner peripheral side of the outer cup 31. A cylindrical wall body 35 is provided at the lower portion of the inner cup 32. A gap forming a discharge path is formed between the wall body 35 and the outer peripheral wall 33 of the outer cup 31. Further, below the inner cup 32, a bent path is formed by an annular horizontal member 36, a cylindrical outer peripheral vertical member 37, a cylindrical inner peripheral vertical member 38, and an annular bottom member 39 located at the bottom. A gas-liquid separation portion is constituted by this bent path.

[0031] And, a drain port 40 for discharging the recovered liquid is formed in the bottom member 39 between the outer peripheral wall 33 of the outer cup 31 and the outer peripheral vertical member 37, and a drain pipe 41 is connected to the drain port 40. On the other hand, an exhaust port 42 for exhausting the atmosphere around the wafer W is formed in the bottom member 39 between the outer peripheral vertical member 37 and the inner peripheral vertical member 38, and an exhaust pipe 43 is connected to the exhaust port 42.

[0032] Similar to the aforementioned exhaust pipe 12, the exhaust pipe 43 is connected to an exhaust mechanism 150 via a main exhaust pipe 151. A damper 152 for switching between the exhaust in the processing container 10 via the exhaust pipe 12 (hereinafter referred to as "module exhaust") and the exhaust in the cup 30 via the exhaust pipe 43 (hereinafter referred to as "cup exhaust") is provided in the main exhaust pipe 151.

[0033] Above the inner cup 32, an opening 44 that is open upward is formed to transfer the wafer W to and from the spin chuck 20. The opening 44 is formed by the inner peripheral surface of the upper end of the outer cup 31. Specifically, the opening 44 is formed by the inner peripheral surface of the upper end of the inclined wall 34 of the outer cup 31.

[0034] Furthermore, the cup 30 has a suction port 45 that sucks the gas flowing from above the cup 30 toward the cup 30. The suction port 45 is provided at the peripheral edge of the inclined wall 34 so as to penetrate the inclined wall 34 of the outer cup 31. Also, a plurality of suction ports 45 are provided at intervals in the circumferential direction. Each suction port 45 is formed in an arc shape in plan view.

[0035] These suction ports 45 are open upward. For this reason, as the upward openings formed in the cup 30, there are the opening 44 for transferring the wafer W and the suction ports 45 provided on the outer peripheral side of the opening 44.

[0036] In the cup 30 having the above-described suction ports 45, as shown in FIG. 3, as exhaust flow paths, a flow path 46 from the opening 44 to the exhaust port 42 and a flow path 47 from the suction port 45 to the exhaust port 42 are formed. These flow paths 46 and flow path 47 are connected to each other below the opening 44, that is, below the wafer W held by the spin chuck 20. For this reason, the airflow from the gap between the wafer W held by the spin chuck 20 and the outer cup 31 toward the exhaust port 42 passes through the flow path 46 and merges with the airflow passing through the flow path 47.

[0037] The size of the suction port 45 is appropriately determined according to the rotation speed and exhaust volume of the spin chuck 20. However, the width d of the suction port 45 1 is preferably wider than the gap d between the peripheral edge of the wafer W held by the spin chuck 20 and the outer cup 31. 2 Thereby, the flow rate of the gas sucked from the suction port 45 is increased compared to the flow rate of the gas sucked from the gap between the wafer W and the outer cup 31, and the exhaust from the suction port 45 can be promoted.

[0038] <Wafer Processing> Next, an example of the wafer processing performed using the developing apparatus 1 configured as described above will be described. Note that the following processing is performed under the control of the control unit U. In the following description, it is assumed that a resist film is formed on the surface of the wafer W before being carried into the developing apparatus 1, and exposure processing and subsequent heat treatment have been completed on the resist film. Also, during the processing, a downward airflow from above the cup 30 is continuously formed by the airflow forming unit 200.

[0039] (Step S1: Holding of Wafer W) First, the wafer W passes through the opening 44 of the cup 30 and is held by the spin chuck 20. Specifically, first, a wafer transfer mechanism (not shown) holding the wafer W is inserted into the processing container 10 from the outside of the processing container 10 through a carry-in outlet (not shown) provided on the side surface of the processing container 10. Then, the wafer W is transferred above the spin chuck 20. Next, the lifting pins are lifted and lowered, the wafer W passes through the opening 44, and is delivered to the upper surface of the spin chuck 20. Then, the wafer W is adsorbed and held by the spin chuck 20. In this step, the damper 152 is adjusted so that module exhaust is performed among module exhaust and cup exhaust.

[0040] (Step S2: Processing Using Developer) Subsequently, processing using a developer is performed on the wafer W held by the spin chuck 20. Specifically, for example, supply of the developer (Step S2A) and stationary development (Step S2B) are performed.

[0041] (Step S2A: Supply of Developer) In this step, the developer is supplied to the wafer W held by the spin chuck 20, and a developer film is formed on the wafer W. Specifically, the developer nozzle 103 is moved above the wafer W. Then, the supply of the developer from the developer nozzle 103 onto the wafer W is started, and a paddle of the developer, that is, a developer film, is formed. For example, when forming the developer film, the discharge destination of the developer from the developer nozzle 103 is fixed at the center of the wafer W in the extending direction of the rail 100, and in this state, the wafer W is rotated at a low rotational speed (for example, 100 rpm or less). When the developer film is formed, the supply of the developer from the developer nozzle 103 is stopped and the rotation of the wafer W is stopped. Thereafter, the developer nozzle 103 is retracted from above the wafer W.

[0042] In this step, the damper 152 is adjusted so that cup exhaust is performed among module exhaust and cup exhaust. Thereby, it is possible to suppress the leakage of the developer mist to the outside of the cup 30. The developer mist is generated when the developer discharged from the developer nozzle 103 collides with the wafer W or the like.

[0043] When cup exhaust is being performed in this way, that is, when exhaust is being performed from the bottom of the cup 30, as described above, the airflow tends to be stronger at the wafer peripheral portion than at the wafer center portion. Specifically, at the wafer peripheral portion rather than at the wafer center portion, the flow velocity of the airflow along the wafer W tends to be high. On the other hand, in the developing apparatus 1, the gas flowing from above the cup 30 toward the cup 30 can be exhausted through the suction port 45. That is, since another exhaust flow path different from the opening 44 is provided, the exhaust flow rate from the peripheral portion of the wafer W can be reduced. Therefore, in this step, even when cup exhaust is performed, it is possible to suppress the airflow from becoming stronger at the wafer peripheral portion than at the wafer center portion. Specifically, the flow velocity difference between the center portion of the wafer W and the peripheral portion of the wafer W can be reduced. As a result, the temperature difference of the developer at the end of this step between the center portion of the wafer W and the peripheral portion of the wafer W can be reduced.

[0044] (S2B: Stationary Development) In this process, the developer film formed in step S2A is maintained on the wafer W for a predetermined time, and static development of the resist film on the wafer W is performed. Also, in this process, the damper 152 is adjusted and maintained in a state where module evacuation is performed and cup evacuation is not performed. Therefore, it is possible to suppress the generation of an air flow at the peripheral portion of the wafer W during static development.

[0045] (Step S3: Processing Using Rinse Liquid) Subsequently, a process of using a rinse liquid, that is, a cleaning process, is performed on the wafer W held by the spin chuck 20.

[0046] Specifically, the rinse liquid nozzle 106 is moved above the center of the wafer W. The rinse liquid is supplied from the rinse liquid nozzle 106 onto the wafer W, and the wafer W is cleaned. For example, during this cleaning, first, the rinse liquid is supplied from the rinse liquid nozzle 106 onto the wafer W rotating at a first rotation speed T1, which is higher than the rotation speed at the time of supplying the developer liquid in step S2A, and the developer film on the wafer W is replaced with the rinse liquid. The first rotation speed T1 is, for example, 100 to 500 rpm. Then, after the supply of the rinse liquid is stopped, the rotation speed of the wafer W is increased to a second rotation speed T2 (>S1), and the rinse liquid is shaken off the wafer W, that is, the wafer W is dried. During drying, the rinse liquid nozzle 106 is retracted from above the wafer W.

[0047] In this process, the damper 152 is adjusted so that cup evacuation is performed among module evacuation and cup evacuation. Thereby, it is possible to suppress the leakage of the rinse liquid or the developer mist to the outside of the cup 30. Note that, in this process, the rinse liquid or the developer mist may be generated when the rinse liquid supplied from the rinse liquid nozzle 106 collides with the wafer W, or when the rinse liquid or the developer liquid shaken off from the wafer W collides with the outer cup 31.

[0048] (Step S4: Wafer Unloading) Then, the wafer W is unloaded from the developing apparatus 1 by a procedure opposite to that in step S1. This completes a series of wafer processes.

[0049] <Main effects of this embodiment> According to the cup 30 according to the present embodiment described above, since the suction port 45 is formed on the outer peripheral side of the opening 44 for transferring the wafer W, the gas flowing from above the cup 30 toward the cup 30 can be exhausted through the suction port 45. That is, since another exhaust flow path different from the opening 44 is provided, the exhaust flow rate from the peripheral edge of the wafer W can be reduced. Thereby, the flow velocity difference between the central portion of the wafer W and the peripheral edge portion of the wafer W can be reduced. That is, the airflow with respect to the wafer W in the cup 30 is adjusted. As a result, the temperature difference of the developing solution between the central portion of the wafer and the peripheral edge portion of the wafer can be reduced. In particular, when cup exhaust is performed and development proceeds, that is, at the time of supplying the developing solution in step S2A, it is possible to suppress the occurrence of a temperature difference in the developing solution between the central portion of the wafer and the peripheral edge portion of the wafer. Therefore, even when a developing solution with high sensitivity to temperature is used, it is possible to suppress the occurrence of a difference in the development result between the peripheral edge portion of the wafer and the central portion of the wafer. That is, according to the present embodiment, a good processing process can be realized by adjusting the airflow with respect to the wafer W in the cup 30. Note that the development result is specifically dimensions such as the line width of the resist pattern after development.

[0050] <Another example of the cup> Next, another configuration example of the cup will be described with reference to FIGS. 5 to 7. FIG. 5 is a longitudinal sectional view for explaining another configuration example of the cup. FIG. 6 is a longitudinal sectional view for explaining still another configuration example of the cup. FIG. 7 is an explanatory view schematically showing the airflow during exhaust. Note that the thick black arrows in FIG. 7 indicate the airflow, and the thickness of the arrows indicates the magnitude of the gas flow rate.

[0051] The cup 30A in FIG. 5 is provided with an opening / closing portion 50 that opens and closes the suction port 45. The opening / closing portion 50 includes a lid member 51 and a lifting mechanism 52 as a retracting mechanism for retracting the lid member 51. The lid member 51 is formed in an annular shape in plan view so as to cover the suction port 45. The lid member 51 is connected to the lifting mechanism 52 via the support member 53. By the lifting mechanism 52, the lid member 51 can be retracted from the cup 30, and more specifically, it can be lifted and lowered with respect to the cup 30. Specifically, by the lifting mechanism 52, the lid member 51 can be lifted and lowered between a first position shown by a dotted line in FIG. 5 and a second position shown by a solid line in FIG. 5. The first position is a position where the lid member 51 is installed on the outer peripheral surface of the lower end portion of the inclined wall 34, that is, the surface of the cup 30 where the suction port 45 is formed, so as to block the entire suction port 45. The second position is a position retracted upward from the first position, and it is a position where it does not interfere with the wafer W when the wafer W is transferred between the wafer transfer mechanism via the lifting pin (not shown) and the spin chuck 20. The lifting mechanism 52 has, for example, a cylinder as a drive source that generates a driving force for driving the lifting of the lid member 51.

[0052] The timing when the lid member 51 is in the aforementioned first position and the suction port 45 is in an open state is when the possibility of the mist of the processing liquid leaking out of the cup 30 through the suction port 45 is low. On the other hand, the timing when the lid member 51 is in the aforementioned second position and the suction port 45 is in a closed state is when the possibility of the mist of the processing liquid leaking out of the cup 30 through the suction port 45 is high.

[0053] The time when the possibility of the mist of the processing liquid leaking out of the cup 30 through the suction port 45 is low is when the rotation speed of the wafer W is low (including the time when the wafer W is not rotated). Specifically, the time when the possibility of leakage is low is during the supply of the developing solution in step S2A and the stationary development in step S2B in the aforementioned wafer processing. Also, the time when the possibility of the mist of the processing liquid leaking out of the cup 30 through the suction port 45 is high is when the rotation speed of the wafer W is high. Specifically, the time when the possibility of leakage is high is when the wafer W is rotated at the second rotation speed T2 to be dried in a state where the supply of the processing liquid such as the developing solution and the rinse liquid is stopped in step S3 of the aforementioned wafer processing.

[0054] In addition, when rotating the wafer W at the first rotation speed T1 while supplying the rinse liquid in step S3 of the wafer processing described above, the lid member 51 may be in the first position or the second position. Further, in the process using the rinse liquid in step S3 of the wafer processing described above, since development does not proceed, even if the suction port 45 is in the closed state or the airflow at the peripheral edge of the wafer becomes strong, the influence on the development result is small.

[0055] Even in the above cup 30A, when a strong airflow around the peripheral edge of the wafer has an adverse effect on the development result, the airflow around the peripheral edge of the wafer can be weakened by opening the suction port 45. Further, according to the cup 30A, when there is a high possibility that the mist of the processing liquid leaks out of the cup 30 through the suction port 45, by closing the suction port 45, leakage of the above mist through the suction port 45 can be suppressed. That is, according to the cup 30A, both weakening the airflow around the peripheral edge of the wafer and suppressing the mist of the processing liquid from leaking out of the cup 30A can be achieved.

[0056] The cup 30B in FIGS. 6 and 7 is used, for example, in a coating processing apparatus. The coating processing apparatus supplies a coating liquid as a processing liquid to the wafer W to process the wafer W and form a coating film. The coating liquid is, for example, a resist film.

[0057] Unlike the cup 30 shown in FIG. 1 and the like, the cup 30B has an intermediate cup 60 located above the inner cup 32. The intermediate cup 60 is formed in an annular shape in plan view. The above-described opening 44 is formed by the inner peripheral surface at the upper end of the intermediate cup 60. The lower end portion of the intermediate cup 60 is located outward of the upper end portion, and is inclined outward from the upper end portion toward the lower end portion. In addition, the above-described suction port 45 is formed by the outer peripheral surface at the lower end of the intermediate cup 60 and the inner peripheral surface of the outer peripheral wall of the outer cup 31B. The intermediate cup 60 may be supported by the outer cup 31 or the inner cup 32.

[0058] The cup 30B has an intermediate cup 60 and an outer cup 31B provided therein, thereby forming a suction flow path 61. This suction flow path 61 opens upward and guides an air flow from above the cup 30B toward the cup 30B to the suction port 45. Note that, in the outer cup 31B, unlike the outer cup 31 shown in FIG. 1 and the like, the outer peripheral wall 33 and the inclined wall 34 are separate parts.

[0059] Furthermore, the cup 30B has a split cup 62 provided above the intermediate cup 60.

[0060] The split cup 62 is formed in an annular shape. The upper end of the split cup 62 is located at a position higher than the suction port 45. Also, the upper end portion of the split cup 62 is located inward of the lower end portion, and is inclined inward from the lower end portion toward the upper end portion. The split cup 62 may be supported by the outer cup 31 or may be supported by the intermediate cup 60.

[0061] In the cup 30B, the suction flow path 61 is divided into an inner peripheral side and an outer peripheral side by the split cup 62. That is, the suction flow path 61 has an outer suction flow path 61a which is a flow path between the outer cup 31 and the split cup 62, and an inner suction flow path 61b which is a flow path between the intermediate cup 60 and the split cup 62. In the cup 30B having such a suction flow path 61, an air flow passing through each of the outer suction flow path 61a and the inner suction flow path 61b is formed during exhaust.

[0062] According to the suction flow path 61 described above, the air flow from above the cup 30 toward the suction port 45 is rectified, and the generation of vortex flow in the vicinity of the suction port 45 can be suppressed. Thereby, the retention of gas in the vicinity of the suction port 45 is suppressed, and the exhaust from the suction port 45 is promoted.

[0063] Further, by suppressing the generation of the vortex flow, it is also possible to suppress the backflow from the downstream end of the flow path 46 formed by the inner cup 32 and the intermediate cup 60 to the suction flow path 61 through the suction port 45. Therefore, it is possible to suppress the mist of the processing liquid passing through the flow path 46 from flowing back into the suction flow path 61, and it is possible to suppress the mist of the processing liquid from leaking out of the cup 30B.

[0064] From the viewpoint of enhancing the effect of suppressing the backflow to the suction flow path 61 described above, it is preferable that the cross-sectional area of the suction flow path 61 decreases from the upstream side to the downstream side of the suction flow path 61. Thereby, the suction pressure at the downstream end of the suction flow path 61 increases, and the effect of suppressing the backflow to the suction flow path 61 is enhanced.

[0065] Further, when the outer suction flow path 61a and the inner suction flow path 61b are provided, it is preferable that the cross-sectional area of at least one of the outer suction flow path 61a and the inner suction flow path 61b decreases from the upstream side to the downstream side. For example, as shown in FIGS. 6 and 7, when the cross-sectional area gradually decreases in each suction flow path 61a, 61b, the suction pressure increases at the downstream end of each suction flow path 61a, 61b. Thereby, it is possible to suppress not only the backflow from the downstream end of the flow path 46 to the suction flow path 61 but also the backflow between both the outer suction flow path 61a and the inner suction flow path 61b.

[0066] Furthermore, in addition to the intermediate cup 60 forming the opening 44, by providing the outer cup 31 and the split cup 62, the effect of receiving and collecting the processing liquid scattered from the wafer W held by the spin chuck 20 can be enhanced.

[0067] Also, it is preferable that the inner suction flow path 61b has a larger pressure loss when the gas passes through than the outer suction flow path 61a. For example, the pressure loss of the flow path can be increased by narrowing the flow path width (specifically, reducing the minimum cross-sectional area of the flow path) or reducing the opening ratio of the opening forming the flow path.

[0068] When the pressure loss in the inner suction flow path 61b is greater than the pressure loss in the outer suction flow path 61a, the flow rate of the gas passing through the outer suction flow path 61a increases more than the flow rate of the gas passing through the inner suction flow path 61b, and exhaust is promoted at a position further away from the peripheral edge of the wafer W. In other words, the flow rate of the gas flowing near the peripheral edge of the wafer W decreases, and the difference in the flow velocity of the airflow between the central portion of the wafer W and the peripheral edge of the wafer W can be made smaller.

[0069] Also, when the pressure loss in the inner suction flow path 61b is greater than the pressure loss in the outer suction flow path 61a, the flow rate of the gas passing through the inner suction flow path 61b is small. Therefore, it is possible to suppress the mist of the processing liquid from passing through the inner suction flow path 61b from the side of the wafer W held by the spin chuck 20, flowing backward through the outer suction flow path 61a, and being blown out of the cup 30.

[0070] Furthermore, when the pressure loss in the inner suction flow path 61b is greater than the pressure loss in the outer suction flow path 61a, the flow rate of the gas passing through the outer suction flow path 61a during module exhaust is large. Therefore, when switching from cup exhaust to module exhaust, the flow rate of the gas flowing toward the suction port 45 by inertia in the outer suction flow path 61a is also large. Therefore, when switching from cup exhaust to module exhaust, it is possible to suppress the mist of the processing liquid existing below the suction port 45 in the cup 30 from flowing backward through the outer suction flow path 61a and being blown out of the cup 30. That is, it is possible to suppress backdraft when switching from cup exhaust to module exhaust.

[0071] <Modification example of cup 30B> The configuration of the cup 30B having the suction flow path 61 described above is an example, and the cup 30B having the suction flow path 61 may be configured, for example, as follows. That is, the split cup 62 of the cup 30B may be omitted. Also, the inclined wall 34 of the cup 30B may be omitted. Furthermore, both the split cup 62 and the inclined wall 34 of the cup 30B may be omitted.

[0072] <Another example of the airflow forming unit> Next, another configuration example of the airflow forming unit will be described with reference to FIGS. 8 and 9. FIGS. 8 and 9 are diagrams for explaining another configuration example of the airflow forming unit. Note that the thick black arrows in FIGS. 8 and 9 indicate the airflow from the airflow forming unit, and the thickness of the arrows indicates the magnitude of the gas flow rate.

[0073] The airflow forming unit 200A in FIG. 8 has a rectifying plate 202 in addition to the FFU 201. The rectifying plate 202 is provided between the cup 30 and the FFU 201, and is an airflow forming portion that forms a downward airflow from the gas blown out from the FFU 201.

[0074] The rectifying plate 202 has a unit-side opening 203. The unit-side opening 203 is provided at a position facing the spin chuck 20, and forms an airflow toward the wafer W held by the spin chuck 20.

[0075] In addition, the rectifying plate 202 forms a stronger airflow in the region R1 surrounding the outer periphery of the unit-side opening 203 in plan view than in the region R2 outside the region. Hereinafter, the regions R1 and R2 may be referred to as the strong airflow forming region R1 and the weak airflow forming region R2, respectively.

[0076] The rectifying plate 202 is formed with discharge holes (not shown) that allow the gas from the FFU 201 to pass through and discharge downward. A plurality of discharge holes are formed in both the region of the rectifying plate 202 facing the strong airflow forming region R1 and the region facing the weak airflow forming region R2. The first opening ratio, which is the ratio indicated by the discharge holes in the region of the rectifying plate 202 facing the strong airflow forming region R1, is lower than the second opening ratio, which is the ratio indicated by the discharge holes in the region of the rectifying plate 202 facing the weak airflow forming region R2. As a result, the flow velocity of the airflow formed by the gas discharged from the discharge holes in the region facing the strong airflow forming region R1 is faster than the flow velocity of the airflow formed by the gas discharged from the discharge holes in the region facing the weak airflow forming region R2. That is, a stronger airflow can be formed in the strong airflow forming region R1 than in the weak airflow forming region R2.

[0077] The strong airflow formed in the strong airflow formation region R1 functions as an air curtain. Therefore, it is possible to suppress the influence of disturbance factors present in the weak airflow formation region R2 from reaching the region inside the strong airflow formation region R1. Specifically, it is possible to suppress particles in the weak airflow formation region R2 from being included in the airflow directed downward from the unit-side opening 203, that is, the airflow directed toward the wafer W.

[0078] The cup 30 shown in FIG. 1 and the like can also be used in the liquid processing apparatus using the airflow forming unit 200A as described above. In this case, the rectifying plate 202 preferably forms the above strong airflow on the outer peripheral side of the opening 44 of the cup 30 in plan view. That is, the strong airflow formation region R1 preferably forms the above strong airflow so as to surround the outer periphery of the opening 44 of the cup 30 in plan view. Thereby, it is possible to suppress the above strong airflow from hitting only the peripheral portion of the wafer W without hitting the central portion of the wafer W. As a result, it is possible to suppress the flow velocity difference of the airflow between the wafer central portion and the wafer peripheral portion from increasing due to the influence of the above strong airflow.

[0079] The unit-side opening 203 is preferably formed as follows. That is, the unit-side opening 203 is preferably formed such that its entirety is located inside the peripheral edge of the wafer W held by the spin chuck 20 in plan view. Specifically, the diameter of the unit-side opening 203 is preferably 30% to 90% of the diameter of the wafer W. Thereby, compared with the case where the rectifying plate 202 is not provided, the airflow from the unit-side opening 203 can be strengthened. Also, the strong airflow from the unit-side opening 203 can be intensively applied to the central portion side of the wafer W. Therefore, even when the temperature of the wafer central portion is less likely to drop compared to the wafer peripheral portion, it is possible to suppress the occurrence of a temperature difference between the wafer central portion and the wafer peripheral portion.

[0080] Also, the cup 30B shown in FIG. 6 or the like may be used in the liquid processing apparatus using the airflow forming unit 200A as described above. In this case, it is preferable that the inner peripheral end at the upper end of the outer suction channel 61a is located on the outer peripheral side of the unit side opening 203 in a plan view. Thereby, it is possible to suppress the airflow from the unit side opening 203 toward the wafer W from being affected by the suction through the outer suction channel 61a.

[0081] As described above, the cup according to the present disclosure has been described. Note that the shapes of the components of the cup described in this specification are merely examples, and the specific shapes are appropriately determined according to the type of gas discharged from the cup, the exhaust capacity of the substrate processing apparatus, the processing liquid supplied to the wafer surface, and the like. For example, each cup component constituting the suction channel 61 may have a shape with a curved surface in order to enhance the rectifying effect. Further, each cup component constituting the suction channel 61 may have a shape with a curved surface as long as a rectifying effect can be obtained.

[0082] In addition, the cup and the substrate processing apparatus according to the present disclosure can also be applied to a processing target substrate other than a semiconductor wafer, for example, a processing apparatus for an FPD (flat panel display) substrate.

[0083] It should be considered that all the embodiments disclosed this time are illustrative and not restrictive in any way. The above embodiments may be omitted, substituted, or changed in various forms without departing from the scope and gist of the appended claims. For example, the constituent elements of the above embodiments can be arbitrarily combined. From such an arbitrary combination, the actions and effects of each constituent element related to the combination can be naturally obtained, and other actions and other effects obvious to those skilled in the art can be obtained from the description in this specification.

[0084] Also, the effects described in this specification are merely illustrative or exemplary and not limiting. That is, the technology according to the present disclosure may exhibit other effects obvious to those skilled in the art from the description in this specification, together with or instead of the above effects.

[0085] Note that the following configuration examples also fall within the technical scope of the present disclosure. (1) A cup used in a substrate processing apparatus that supplies a processing liquid to a substrate and processes the substrate, an opening that is open upward for delivering the substrate, a suction port that sucks a gas flowing from above the cup toward the cup, and an exhaust port that discharges the gas sucked from the suction port, wherein the suction port opens upward on the outer peripheral side of the opening, and a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening. (2) The cup according to (1), further comprising an opening / closing portion that opens and closes the suction port. (3) The cup according to (1) or (2), further comprising a suction flow path that guides an air flow to the suction port, wherein an upper end of the suction flow path opens upward, and the suction flow path is divided into an inner peripheral side and an outer peripheral side, and a pressure loss when the gas passes through the flow path on the inner peripheral side is greater than that of the flow path on the outer peripheral side. (4) A substrate processing apparatus that supplies a processing liquid to a substrate and processes the substrate, comprising a substrate holding portion that holds and rotates the substrate, a processing liquid supply portion that supplies a processing liquid to the substrate, and a cup that houses the substrate holding portion, wherein the cup has an opening that is open upward for delivering the substrate, a suction port that sucks a gas flowing from above the cup toward the cup, and an exhaust port that discharges the gas sucked from the suction port, wherein the suction port opens upward on the outer peripheral side of the opening, and a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening. (5) Further include an airflow forming unit for generating a downward airflow from above the cup, The airflow forming unit is, Provided above the cup, and having a blowing portion for blowing gas downward, Provided between the cup and the blowing portion, and having an airflow forming portion for forming the downward airflow from the gas blown out from the blowing portion, The airflow forming portion is, Having a unit-side opening, which is another opening for forming an airflow toward the substrate held by the substrate holding portion, at a position facing the substrate holding portion, The substrate processing apparatus according to (4) above, wherein in a plan view, a region surrounding the outer periphery of the unit-side opening forms a stronger airflow than a region outside the said region. (6) Further having a suction flow path for guiding an airflow to the suction port, The upper end of the suction flow path opens upward, The suction flow path is, Divided into an inner peripheral side and an outer peripheral side, The pressure loss when gas passes through the inner peripheral side flow path is greater than that of the outer peripheral side flow path, The inner peripheral end at the upper end of the outer peripheral side flow path is located outside the unit-side opening in a plan view. The substrate processing apparatus according to (5) above. (7) The airflow forming portion forms the stronger airflow on the outer peripheral side of the opening of the cup in a plan view. The substrate processing apparatus according to (5) or (6) above. (8) The unit-side opening is formed such that the whole of it is located inside the peripheral edge of the substrate held by the substrate holding portion in a plan view. The substrate processing apparatus according to any one of (5) to (7) above. (9) The cup further has an opening and closing portion for opening and closing the suction port, Further including a control portion, The control portion is, (A) A step of supplying the processing liquid to the substrate held by the substrate holding portion, (B) After the step (A), rotating the substrate held by the substrate holding unit at a speed higher than that in the step (A) in a state where the processing liquid is not supplied; The substrate processing apparatus according to any one of (4) to (8), wherein the suction port is opened in the step (A) and closed in the step (B). (10) A substrate processing method for processing a substrate by supplying a processing liquid to the substrate using a substrate processing apparatus, The substrate processing apparatus includes a substrate holding unit that holds and rotates the substrate; a cup in which the substrate holding unit is accommodated; The cup has an opening that is open upward for transferring the substrate; a suction port that sucks gas flowing from above the cup toward the cup; an exhaust port that discharges the gas sucked from the suction port; The suction port opens upward on the outer peripheral side of the opening; a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening; The substrate processing method (a) supplying the processing liquid to the substrate held by the substrate holding unit; (b) after the step (a), rotating the substrate held by the substrate holding unit at a speed higher than that in the step (a) in a state where the processing liquid is not supplied; A substrate processing method, wherein the suction port is opened in the step (a) and closed in the step (b).

Description of Reference Numerals

[0086] 1 Developing apparatus 20 Spin chuck 30, 30A, 30B Cups 42 Exhaust port 44 Opening 45 Suction port W Wafer

Claims

1. A cup used in a substrate processing apparatus for supplying a processing liquid to a substrate and processing the substrate, an opening that is open upward for transferring the substrate, a suction port for sucking gas flowing from above the cup toward the cup, and an exhaust port for discharging the gas sucked from the suction port, and the suction port opens upward on the outer peripheral side of the opening, a cup in which a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening.

2. The cup according to claim 1, further comprising an opening / closing part for opening and closing the suction port.

3. The cup further comprises a suction flow path for guiding an air flow to the suction port, the upper end of the suction flow path opens upward, the suction flow path is divided into an inner peripheral side and an outer peripheral side, and the flow path on the inner peripheral side has a greater pressure loss when the gas passes through than the flow path on the outer peripheral side. The cup according to claim 1 or 2.

4. A substrate processing apparatus for supplying a processing liquid to a substrate and processing the substrate, a substrate holding part for holding and rotating the substrate, a processing liquid supply part for supplying a processing liquid to the substrate, and a cup in which the substrate holding part is accommodated, and the cup has an opening that is open upward for transferring the substrate, a suction port for sucking gas flowing from above the cup toward the cup, and an exhaust port for discharging the gas sucked from the suction port, and the suction port opens upward on the outer peripheral side of the opening, a substrate processing apparatus in which a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening.

5. The substrate processing apparatus further comprises an air flow forming unit for generating a downward air flow from above the cup, the air flow forming unit is provided above the cup and has a blowing part for blowing out gas downward, and an air flow forming part that is provided between the cup and the blowing part and forms the downward air flow from the gas blown out from the blowing part, and the air flow forming part has a unit-side opening, which is another opening for forming an air flow toward the substrate held by the substrate holding part, at a position facing the substrate holding part, and forms a stronger air flow in a region surrounding the outer periphery of the unit-side opening in a plan view than in a region outside the region. The substrate processing apparatus according to claim 4.

6. The cup further comprises a suction flow path for guiding an air flow to the suction port, The upper end of the suction flow path opens upward, The suction flow path is divided into an inner peripheral side and an outer peripheral side, the flow path on the inner peripheral side has a greater pressure loss when gas passes through than the flow path on the outer peripheral side, The inner peripheral end at the upper end of the flow path on the outer peripheral side is located outside the unit-side opening in a plan view. The substrate processing apparatus according to claim 5.

7. The airflow forming portion forms the strong airflow on the outer peripheral side of the opening of the cup in a plan view. The substrate processing apparatus according to claim 5 or 6.

8. The unit-side opening is formed such that the whole of it is located inside the peripheral edge of the substrate held by the substrate holding portion in a plan view. The substrate processing apparatus according to claim 5 or 6.

9. The cup further has an opening / closing portion for opening and closing the suction port, further includes a control unit, The control unit (A) a step of supplying the processing liquid to the substrate held by the substrate holding portion; (B) after the step (A), a step of rotating the substrate held by the substrate holding portion at a higher speed than in the step (A) in a state where the processing liquid is not supplied. The substrate processing apparatus according to any one of claims 4 to 6, wherein the suction port is in an open state in the step (A) and the suction port is in a closed state in the step (B).

10. A substrate processing method for supplying a processing liquid to a substrate and processing the substrate using a substrate processing apparatus, The substrate processing apparatus includes a substrate holding portion for holding and rotating the substrate, and a cup in which the substrate holding portion is accommodated. The cup has an opening that is open upward for delivering the substrate, a suction port for sucking gas flowing from above the cup toward the cup, and an exhaust port for discharging the gas sucked from the suction port. The suction port opens upward on the outer peripheral side of the opening, a flow path from the opening to the exhaust port and a flow path from the suction port to the exhaust port are connected below the opening, The substrate processing method includes (a) a step of supplying the processing liquid to the substrate held by the substrate holding portion, (b) after the step (a), a step of rotating the substrate held by the substrate holding portion at a higher speed than in the step (a) in a state where the processing liquid is not supplied. The substrate processing method, wherein the suction port is in an open state in the step (a) and the suction port is in a closed state in the step (b). ​ ​

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