Fluorine ion implantation system with non-tungsten materials and methods of using

Abstract

To solve a problem in which conventional fluorine implant processes are limited in terms of the type of fluorine ions implanted and the specificity of the fluorine ion implantation, e.g., in terms of fluorine ion implantation depth, and additionally, ionic species generated upon decomposition of fluorine-containing compounds may also be co-implanted with fluorine, and additionally, the use of fluorine-containing feed gases may adversely affect ion source performance, source lifetime, implant tool productivity, and tool ownership cost.SOLUTION: Use of a fluorine gas source 304 for generating fluorine ion species and an arc chamber containing one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic) minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, use of a hydrogen and / or hydride gas source along with the fluorine gas can improve source lifetime and beam current.SELECTED DRAWING: Figure 4

Description

Technical Field

[0001] The present disclosure relates to a fluorine ion implantation system and method that utilize non-tungsten materials to control the halogen cycle, enhance performance, and extend system life.

Background Art

[0002] Fluorine co-implantation is used in advanced semiconductor device manufacturing for defect engineering, shallow junction formation, and material modification. A common setup for fluorine implantation involves supplying a fluoride dopant source gas to an ion source to provide fluorine (F) as one of the dissociation by-products.

[0003] However, conventional fluorine implant processes are generally limited with respect to the type of fluorine ions implanted and the specificity of the fluorine ion implantation, e.g., with respect to the fluorine ion implantation depth. Additionally, ionic species generated during the decomposition of fluorine-containing compounds can, undesirably, be co-implanted with fluorine.

[0004] Also, the use of fluorine-containing supply gases gives rise to a halogen cycle that can negatively impact ion source performance, source life, implant tool throughput, and tool ownership costs. Considering a wide range of potential applications, various challenges remain in the art with respect to improving fluorine ion beam performance.

Summary of the Invention

[0005] The present invention relates to a system and method for implanting fluorine ion species into a substrate in an ion implantation process. The system includes a non-tungsten material within an arc chamber, such that formation of tungsten fluoride during system operation, which otherwise results from reaction of a fluoride gas with a tungsten chamber material, is minimized. Thus, by minimizing undesirable tungsten or tungsten fluoride coatings, source life is extended and improvement of system performance is facilitated. Further, the system may include a hydrogen and / or hydride gas source, and these gases can be used together with the fluorine gas to improve source lifetime and / or beam current.

[0006] In one aspect, the present invention provides a system for implanting fluorine ion species into a substrate, the system including a gas source containing a fluorine compound capable of generating at least one fluorine ion species when the fluorine compound is ionized. The system also includes an arc chamber formed of one or more (non-tungsten) materials, a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, an oxide-containing material, or a ceramic. In an exemplary aspect, these non-tungsten materials may be non-inclined, surface-inclined treated, or surface-coated on an arc chamber liner or an arc chamber piece.

[0007] In another aspect, the present invention also provides a method for implanting one or more fluorine ion species into a substrate, the method including the steps of providing the system described herein, the step that the substrate is present in a process chamber, and then operating the system to implant one or more fluorine ion species into the substrate.

[0008] The fluorine ion species can be generated from one or more fluorine-containing compounds, including those such as F2 and various other compounds having one or more elements capable of forming a bond with fluorine.

[0009] The system and method of the present invention can also include one or more of the following characteristics: a hydrogen or hydride-containing gas source, an oxygen-containing gas source, and / or an inert gas source. In some embodiments, the fluorine-containing gas coflows separately with one or more of a hydrogen-containing gas, an oxygen-containing gas, and / or an inert gas. In some embodiments, two or more of the fluorine-containing gas, the hydrogen-containing gas, the oxygen-containing gas, and / or the inert gas are in a premixed state in a gas cylinder package. In some embodiments, two or more of the fluorine-containing gas, the hydrogen-containing gas, the oxygen-containing gas, and / or the inert gas are coflowed together. The use of one or more of these gases different from the fluorine compound can improve the implant beam current, the performance of the supply source life, or both.

Brief Description of the Drawings

[0010]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Embodiments for Carrying Out the Invention

[0011] The present disclosure relates to methods and systems in which a fluorine compound that generates a plurality of fluorine ion species is used for fluorine ion implantation and in various aspects. The system is operated to provide a predetermined flow rate of a fluorine compound, a predetermined arc power, and a predetermined source magnetic field. Under these operating conditions, a beam current optimized for the desired fluorine ion species and thus capable of targeting implantation into a substrate is provided.

[0012] The method of the present disclosure can be carried out using an ion source device for ion implantation. For the fluorine implantation method described herein, any type of ion implantation system can be used. A system including an arc chamber formed from one or more materials including a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, an oxide-containing material, or a ceramic. When these materials are present in the chamber, they can replace tungsten and improve F+ implant performance including beam current and source life. In particular, these materials can reduce the amount of tungsten fluoride formed during the implantation process.

[0013] One or more of these non-tungsten materials (graphite-containing materials, carbide-containing materials, fluoride-containing, nitride-containing, oxide-containing materials, or ceramics) may be present in all or part of one or more of the arc chamber liner or arc chamber piece.

[0014] One or more non-tungsten materials can be incorporated into the structural material of the arc chamber. For example, the arc chamber material can be "surface inclined treated" (e.g., "sprayed") with graphite-containing, carbide-containing, fluoride-containing, nitride-containing, or oxide-containing materials, or with ceramics. In some embodiments, the surface inclined treatment is achieved by applying a desired non-tungsten material (graphite, carbide, etc.) to the metal surface and then heating the surface to incorporate the non-tungsten material into the metal of the arc chamber. The non-tungsten material will be present at a high density on the surface of the structure, providing a protective barrier. The surface inclined treatment can cover all or part of the surface (inside) of the arc chamber.

[0015] Alternatively, the arc chamber can be non-inclined but modified in other ways to connect the desired non-tungsten material and the material of the arc chamber. For example, in another modification mode, the desired non-tungsten material (graphite, carbide, etc.) is surface coated on all or part of the metal surface of the arc chamber. In the surface coating, the non-tungsten material forms a coating layer on the metal surface but is not necessarily incorporated into the metal. The coating layer can be formed by one of a variety of techniques, such as coating the non-tungsten material using heat, coating using pressure, or by sputter coating. The coating layer can be of a desired thickness, for example, from 1 nanometer to 5 millimeters. The surface coating can cover all or part of the surface (inside) of the arc chamber.

[0016] As yet another embodiment, the system can include a structural member including a non-tungsten material disposed in the ion source chamber, such as a non-tungsten liner or other structural component of the ion source chamber. The liner can be a flat, e.g., planar, piece of a structure having major surfaces on two opposite sides and a thickness therebetween. The liner can be rectangular, curved (e.g., circular), angular, or otherwise shaped. The liner can be removable, which means that the liner can be inserted into and removed from the interior space of the ion source chamber. In other cases, the liner can be fixed and non-removable from the chamber. The insertable liner can be formed from any one or more of the graphite-containing materials, carbide-containing materials, fluoride-containing materials, nitride-containing materials, oxide-containing materials, or ceramics described herein.

[0017] Various types of non-tungsten materials can be used to modify the arc chamber. For example, graphite-containing materials, carbide-containing materials, fluoride-containing, nitride-containing, oxide-containing materials, or ceramics include graphite (C), silicon carbide (SiC), tungsten carbide (WC), tungsten boride (WB, W2B, WB2, WB4), boron carbide (B4C, B 12 C3), calcium carbide (CaC2), aluminum carbide (Al4C3), magnesium carbide (Mg2C), aluminum fluoride (AlF3), gallium fluoride (GaF3), indium fluoride (InF3), boron nitride (BN), gallium nitride (GaN), aluminum nitride (AlN), tungsten lanthanum oxide (WLa2O3), gallium oxide (Ga2O3), aluminum oxide (Al2O3) and are selected from the group consisting of.

[0018] In some embodiments, the graphite-containing material, carbide-containing material, or ceramic may be PLS (10-micron graphite), DFP (5-micron graphite), DFP3-2 (densified graphite), SCF (hard graphite), SCF-PYC (hard 5-micron graphite with a pyrolytic carbon coating), SCF-IF (hard 5-micron graphite impregnated with pyrolytic carbon), ZEE (hard 1-micron graphite), ZEE-PYC (hard 1-micron graphite with a pyrolytic carbon coating), ZEE-IF (hard 1-micron graphite impregnated with pyrolytic carbon), SUPERSiC, SUPERSiC-GS (graphite with an SiC composite layer), or any combination of two or more of these materials.

[0019] In the system of the present disclosure, the arc chamber may include an interior defined by an inner surface including sidewalls, a bottom, and a top, and all or part of the inner surface includes a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, an oxide-containing material, or a ceramic, and the sidewalls include sidewalls on the cathode side and the anticathode side.

[0020] Referring now to the drawings, FIG. 1 is a schematic view of an ion implantation system 10 having a gas supply line 14 for supplying a fluorine-containing gas to an arc chamber and including an arc chamber 12 for ionizing the fluorine-containing gas within the chamber. Thus, the arc chamber 12 includes a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, an oxide-containing material, or a ceramic and provides an ion source chamber that reduces the amount of tungsten fluoride formed during the implantation process.

[0021] FIG. 2 is a cross-sectional view of the ion implantation system 10 of FIG. 1, schematically showing the generation of plasma 16 in the arc chamber 12 of the system of FIG. 1. The fluorine-containing gas flows into the fluorine-containing gas supply line 14 having fixed monitoring thermocouples TC1 and TC2 in the direction indicated by arrow A in relation to monitoring for determining the thermal state quality between the supply line and the gas entering the arc chamber, which may also be desirable regarding the use of the thermal management system for the ion implantation system.

[0022] FIG. 3 is a perspective view in cross-section of an ion source assembly including an ion source device 70 and an optional heat sink device 50 for thermal management of the system. This cross-sectional view shows that the fluorine-containing gas supply line 72 is coupled to the gas flow path 84 in the gas supply plug and the gas flow path 86 in the gas bushing connected to the ion source.

[0023] The ion source device shown in FIG. 3 includes a base 80, and the base 80 can be coated or modified by a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, an oxide-containing material, or a ceramic. The base 80 can include an opening 82 therein.

[0024] FIG. 4 is a schematic diagram of an ion implant process system 300 including a storage and input container 302 containing a reactant gas, and the reactant gas is replenished for an in situ reaction with the fluorine-containing gas in the ion source chamber to generate fluorine ion species for ion implantation of the substrate 328 in the illustrated ion implant chamber 301.

[0025] The storage and input container 302 includes a container wall 306 surrounding an internal volume containing fluorine gas.

[0026] The container may be a conventional type of gas cylinder having an internal volume arranged to contain only gas, or the container may contain an adsorbent material having an adsorption affinity for the reactant gas, and under the input conditions, the co-reactant source gas for release from the container is desorbable.

[0027] The storage and input container 302 includes a valve head 308 connected in gas flow communication with a discharge line 312. A pressure sensor 310 is arranged in line 312 together with a mass flow controller 314. Other monitoring and sensing components may be connected to the line and to control means, such as an actuator, feedback and computer control system, cycle timer, etc.

[0028] The ion implant chamber 301 contains an ionization device 316, which receives the fluorine-containing gas released from line 312, which is reactive with the dopant source reactant provided in or in conjunction with the ionization device chamber, generates fluorine ion species, and the fluorine ion species generate an ion beam 305 under ionization conditions in the ionization device chamber. The ion beam 305 passes through a mass analyzer unit 322 that selects the required ions and rejects the unwanted ions.

[0029] The selected ions pass through an acceleration electrode array 324 and then through a deflection electrode 326. The resulting converged ion beam impinges on a substrate element 328 disposed on a rotary receiver 330 attached to a spindle 332 to form a doped (gallium-doped) substrate as an ion implantation product.

[0030] Each section of the ion implant chamber 301 is evacuated through lines 318, 340, and 344 by pumps 320, 342, and 346, respectively.

[0031] In the method of the present disclosure, one or more fluorine compounds that can be ionized to form fluorine-containing ionic species are used. An exemplary method for implanting fluorine ions, particularly fluorine ions having two or more fluorine atoms, is described in a U.S. Provisional Patent Application entitled "Fluorine Ion Implantation Method and System" filed concurrently with this application and having Docket No. ENT0188 / P1 (E000202), the disclosure of which is incorporated herein by reference.

[0032] One type of fluorine compound is a compound having the formula Q x F y In Q x F y , Q is an element capable of forming a bond with fluorine (F), and both x and y are integers of 1 or more. In an embodiment, x is an integer in the range of 1 to 3, and y is an integer in the range of 1 to 8. In an embodiment, x is 1 or 2, and y is an integer in the range of 1 to 6. For some compounds of the formula Q x F y , y is equal to x. For example, both y and x are 1. For some compounds of the formula Q x F y , y is greater than x. For example, y is twice x, y is three times x, y is four times x, y is five times x, or y is six times x. For some compounds of the formula Q x F y , y is 1 + x, y is 2 + x, y is 3 + x, y is 4 + x, or y is 5 + x.

[0033] For example, upon ionization using the conditions described herein, a compound having the formula Q x F y can generate fluorine ionic species including compounds of the formula Q u F v + , F + , and F2 + . Both u and v are integers, and the formula Q x F ycan be described with respect to x and y, where x is an integer greater than or equal to u, and u is an integer greater than or equal to 1, y is an integer greater than or equal to v, and v is an integer greater than or equal to 1. Therefore, the formula Q u F v + For the ion species of, both u and v are integers greater than or equal to 1. In an embodiment, u is an integer in the range of 1 to 3, and v is an integer in the range of 1 to 8. In an embodiment, u is 1 or 2, and v is an integer in the range of 1 to 6. For some formulas Q u F v + For the ion species of, u is equal to v. For example, both u and v are 1. For some formulas Q u F v + For the ion species of, v is greater than u. For example, v is twice u, v is three times u, v is four times u, v is five times u, or v is six times u. For some formulas Q u F v + For the ion species of, v is 1 + u, v is 2 + u, v is 3 + u, v is 4 + u, or v is 5 + u.

[0034] Examples of compounds containing silicon and fluorine include those having the formulas SiF4 and Si2F6, which are ionized to produce fluorine ion species including F + F2 + SiF + SiF2 + SiF3 + SiF4 + Si2F + Si2F2 + Si2F3 + Si2F4 + Si2F5 + and Si2F6 + selected from the group consisting of. In a preferred embodiment, SiF4 is ionized to produce F + SiF + SiF2 + SiF3 + and SiF4 +Generate two or more species selected from the group consisting of.

[0035] Examples of compounds containing boron and fluorine include compounds of the formulas BF3 and B2F4, which can be ionized to generate fluorine ion species including ion species selected from the group consisting of F + , F2 + , BF + , BF2 + , BF3 + , B2F + , B2F2 + , B2F3 + , and B2F4 + . In a preferred embodiment, BF3 is ionized to generate two or more species selected from the group consisting of F + , BF + , BF2 + , and BF3 + .

[0036] Examples of compounds containing germanium and fluorine include compounds of the formulas GeF4 and Ge2F6, which can be ionized to generate fluorine ion species including ion species selected from the group consisting of F + , F2 + , GeF + , GeF2 + , GeF3 + , GeF4 + , Ge2F + , Ge2F2 + , Ge2F3 + , Ge2F4 + , Ge2F5 + , and Ge2F6 + . In a preferred embodiment, GeF4 is ionized to generate two or more species selected from the group consisting of F + , GeF + , GeF2 + , GeF3 + , and GeF4 + .

[0037] Examples of compounds containing phosphorus and fluorine include compounds of the formulas PF3 and PF5, which can be ionized to generate fluorine ion species including ion species selected from the group consisting of F + , F2 + , and PF + , PF2 + , PF3 + , PF4 + , and PF5 + .

[0038] Examples of compounds containing arsenic and fluorine include compounds of the formulas AsF3 and AsF5, which can be ionized to generate fluorine ion species including ion species selected from the group consisting of F + , F2 + , and AsF + , AsF2 + , AsF3 + , AsF4 + , and AsF5 + .

[0039] Examples of compounds containing antimony and fluorine include compounds of the formula SbF5, which can be ionized to generate fluorine ion species including ion species selected from the group consisting of F + , F2 + , and SbF + , SbF2 + , SbF3 + , SbF4 + , and SbF5 + .

[0040] Examples of compounds containing tungsten and fluorine include compounds of the formula WF6, which can be ionized to generate fluorine ion species including ion species selected from the group consisting of F + , F2 + , and WF + , WF2 + , WF3 + , WF4 + , WF5 + , and WF6 +It is possible to generate fluorine ion species including ion species selected from the group consisting of

[0041] Examples of compounds containing nitrogen and fluorine include compounds of the formulas NF3 and N2F4. Fluorine ion species include F + , F2 + , NF + , NF2 + , NF3 + , N2F + , N2F2 + , N2F3 + , N2F4 + , N2F5 + , and N2F6 + and include two or more species selected from the group consisting of

[0042] Examples of compounds containing carbon and fluorine include compounds of the formulas CF4 and C2F6. Fluorine ion species include F + , F2 + , CF + , CF2 + , CF3 + , CF4 + , C2F + , C2F2 + , C2F3 + , C2F4 + , C2F5 + , and C2F6 + and include two or more species selected from the group consisting of

[0043] Other types of fluorine-containing compounds capable of generating fluorine ion species include those of the formula Q x R z F yCompounds [wherein Q and R are elements capable of forming a bond with fluorine (F), and x, z, and y are integers of 1 or more] are exemplified. In an embodiment, Q is selected from the group consisting of B, Si, Ge, P, As, C, and N, and R is selected from H and O. In an embodiment, x is an integer in the range of 1 to 3, preferably 1 or 2, z is an integer in the range of 1 to 4, preferably 1, 2, or 3, and y is an integer in the range of 1 to 8, preferably 1 to 6.

[0044] For example, upon ionization using the conditions described herein, a compound having the formula Q x R z F y can generate fluorine ion species including those of the formula Q u R w F v + , F + , and F2 + . All of u, w, and v are integers, and can be described with respect to x, z, and y of the formula Q x R z F y , where x is an integer greater than or equal to u, and u is an integer of 1 or more, y is an integer greater than or equal to v, and v is an integer of 1 or more, z is an integer greater than or equal to w, and w is an integer of 1 or more. Thus, for the ion species of the formula Q u R w F v + , all of u, w, and v are integers of 1 or more. Preferably, u is an integer in the range of 1 to 3, preferably 1 or 2, w is an integer in the range of 1 to 4, preferably 1, 2, or 3, and v is an integer in the range of 1 to 8, preferably 1 to 6.

[0045] The formula Q x R z F yExamples of compounds having include, but are not limited to, BHF, BHF2, SiHF3, SiH2F2, SiH3F, Si2H3F3, Si2H5F, Si2HF5, GeHF3, GeH2F2, GeH3F, PHF2, PH2F, PH3F2, P2HF, AsHF2, AsH2F, AsH3F2, C n H x F 2n+2-x 、C n H x F 2n-x 、C n H x F 2n-2-x 、 COF2, NHF2, NH2F, NHF, and N2H3F [where n is an integer in the range of 1 to 3 and x is 0, 1, or 2] and the like.

[0046] Other types of fluorine-containing compounds capable of generating fluorine ion species include compounds of the formula F y and fluorine ion species include F + and compounds of the formula F v + wherein y is an integer greater than or equal to v and v is an integer greater than or equal to 1.

[0047] The method of the present disclosure may also include the use of a mixture of two or more fluorine compounds of the formula Q x F y 、Q x R z F y 、およびF y . When two or more different fluorine-containing compounds are used, they may be independently flowed into the injection chamber or flowed into the chamber as a mixture.

[0048] In the method of the present disclosure, one or more fluorine-containing compounds are flowed into an injection chamber to generate fluorine ion species. In some embodiments, the fluorine ion species may include species having the maximum number of fluorine atoms ("cluster ions"), and the flow rate, arc power, and source magnetic field are selected such that the species having the maximum number of fluorine atoms have a beam current greater than the beam current of species having a smaller number of fluorine atoms.

[0049] The operation of the system for fluorine ion implantation can be described in terms of arc power and arc voltage. In some embodiments, the system is operated to provide an arc power within the range of about 5 W to about 1500 W, or in some embodiments, the arc power is within the range of about 90 W to about 1000 W. To achieve an arc power within one of these ranges, the system can be operated such that the arc power is generated at an arc voltage within the range of about 30 V to about 150 V, or more particularly, within the range of about 60 V to about 125 V.

[0050] The operation of the system for fluorine ion implantation can also be described in terms of the flow rate of the fluorine-containing compound into the ion implantation chamber. In some embodiments, the fluorine-containing compound is flowed into the chamber at a rate of 10 sccm or less, and in embodiments, the fluorine-containing compound flows at a rate within the range of 0.2 sccm to 6 sccm.

[0051] In some specific embodiments, the fluorine compound is BF3, and the fluorine ion species are F + , BF + , BF2 + , and BF3 + including two or more species selected from the group consisting of, and the arc power is within the range of 350 W to 1500 W, which is generated at an arc voltage within the range of 30 V to 150 V, and the flow rate is within the range of 1.25 sccm to 1.75 sccm.

[0052] In some specific embodiments, the fluorine compound is SiF4, and the fluorine ion species are F+ 、SiF + 、SiF2 + 、SiF3 + 、and SiF4 + including two or more species selected from the group consisting of, the arc power is in the range of 50 W to 1500 W, which is generated at an arc voltage in the range of 30 V to 150 V, and the flow rate is in the range of 1.0 sccm to 1.5 sccm.

[0053] In some specific embodiments, the fluorine compound is GeF4, and the fluorine ion species are F + 、GeF + 、GeF2 + 、GeF3 + 、and GeF4 + including two or more species selected from the group consisting of, the arc power is in the range of 50 W to 1500 W, which is generated at an arc voltage in the range of 30 V to 150 V, and the flow rate is in the range of 0.2 sccm to 0.8 sccm.

[0054] Optionally, the method of the present disclosure can include flowing a hydrogen or hydride-containing compound different from the fluorine compound into the ion implanter. Examples of such compounds include, but are not limited to, H2, B2H6, SiH4, Si2H6, GeH4, Ge2H6, PH3, AsH3CH4, C2H6, C x H y [wherein x and y are 1 or more], compounds such as NH3, and N2H4. In an exemplary embodiment, the hydrogen or hydride-containing compound flows into the arc chamber at a rate of 0.05 sccm to 10 sccm.

[0055] Optionally, the method of the present disclosure can include flowing an oxygen-containing compound different from the fluorine compound into the ion implanter. Examples of such compounds include, but are not limited to, compounds such as O2, O3, H2O, H2O2, CO, CO2, NO, NO2, N2O, N4O, N2O3, N2O4, N2O5, and N2O6.

[0056] Optionally, the method of the present disclosure can include flowing an inert gas through the ion implanter. Examples of inert gases include nitrogen, helium, neon, argon, krypton, and xenon.

[0057] In embodiments, one of a hydrogen or hydride-containing gas, an oxygen-containing gas, or an inert gas flows through the implanter together with the fluorine-containing gas, and in other embodiments, two of these gases flow, and in still other embodiments, all three gases flow through the implanter together with the fluorine-containing compound.

[0058] When two or more gases flow into the chamber, the gases may flow individually. Alternatively, the gases may flow in a mixed state. For example, any two or more of a fluorine-containing gas, a hydrogen-containing gas, an oxygen-containing gas, and / or an inert gas may be a premixed gas in a gas cylinder package. In still other embodiments, two or more gases are in a mixed state and then another gas flows into the chamber individually.

Examples

[0059] A fluorine-containing gas (GeF4) was flowed into an ionization chamber having a tungsten liner and an ionization chamber having a graphite liner. The system was operated at an arc voltage of 110 V and a source beam of 20 mA. The F+ ion beam current was measured at various gas (GeF4) flow rates. At each flow rate tested, the system with the graphite liner provided a higher F + beam current compared to the system with the tungsten liner. The results are shown in FIG. 5.

Examples

[0060] The beam spectra of various ionized species obtained from the process described in Example 1 were determined. The results show that when using a graphite liner, significantly lower W + and WF x+ It shows that the beam was observed. Refer to Fig. 6.

Example

[0061] A fluorine-containing gas (BF3) was flowed into the ionization chamber either alone or in the presence of hydrogen gas (H2). The flow rate of BF3 was 1.5 sccm, and the system was operated at an arc voltage of 110 V and a source beam of 20 mA. Fig. 7 shows the F + beam current at gradually increasing H2 concentrations, revealing that the current is only slightly affected when H2 is increased to a maximum of 50%. However, analyzing the BF3 beam spectrum of the ionized species showed a significant reduction in the W+ and WFx+ beams when H2 was mixed with BF3. Refer to Fig. 8.

Claims

1. 1. A system for implanting a substrate with fluorine ionic species, comprising: a gas source comprising a fluorine compound, the fluorine compound capable of generating at least one fluorine ion species when ionized; and an arc chamber comprising one or more materials including a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, an oxide-containing material, or a ceramic; Including, the system.

2. 10. The system of claim 1, wherein the one or more materials comprising a graphite-containing material, a carbide-containing material, a fluoride-containing, a nitride-containing, an oxide-containing material, or a ceramic are present in all or a portion of one or more of an arc chamber liner or an arc chamber piece.

3. 10. The system of claim 1, wherein the one or more materials comprising graphite-containing material, carbide-containing material, fluoride-containing, nitride-containing, oxide-containing material, or ceramic may be non-graded or surface-graded or surface-coated on the arc chamber liner or arc chamber piece.

4. The graphite-containing material, the carbide-containing material, the fluoride-containing, nitride-containing, oxide-containing material, or the ceramic is selected from the group consisting of graphite (C), silicon carbide (SiC), tungsten carbide (WC), tungsten boride (WB, W ２ B., W.B. ２ , W.B. ４ ), boron carbide (B ４ C, B １２ C ３ ), calcium carbide (CaC ２ ), aluminum carbide (Al ４ C ３ ), magnesium carbide (Mg ２ C), aluminum fluoride (AlF ３ ), gallium fluoride (GaF ３ ), indium fluoride (InF ３ ), boron nitride (BN), gallium nitride (GaN), aluminum nitride (AlN), tungsten lanthanum oxide (WL ２ O ３ ), gallium oxide (Ga ２ O ３ ), aluminum oxide (Al ２ O ３ 10. The system of claim 1, wherein the first and second inputs are selected from the group consisting of:

5. 2. The system of claim 1, wherein the graphite-containing material, the carbide-containing material, or the ceramic can be 10 micron graphite, 5 micron graphite, DFP3-densified graphite, hard graphite, hard 5 micron graphite with a pyrolytic carbon coating, hard 5 micron graphite impregnated with pyrolytic carbon, hard 1 micron graphite, hard 1 micron graphite with a pyrolytic carbon coating, hard 1 micron graphite impregnated with pyrolytic carbon, graphite with a SiC composite layer, or a combination of any two or more of these materials.

6. The arc chamber comprises: an interior defined by an interior surface including a sidewall, a bottom, and a top, all or a portion of said interior surface comprising said graphite-containing material, said carbide-containing material, said fluoride-containing material, said nitride-containing material, said oxide-containing material, or said ceramic; the sidewalls include a sidewall on a cathode side and a sidewall on an anti-cathode side; The arc chamber liner or piece may compromise a graphite-containing material, a carbide-containing material, a fluoride-containing, a nitride-containing, an oxide-containing material, or a ceramic, and may be non-graded, surface-graded, or surface-coated; The system of claim 1 .

7. (a) The fluorine compound is represented by the formula Q ｘ F ｙ [wherein Q is an element capable of forming a bond with fluorine (F)] and having the formula Q ｕ F ｖ ＋ , F+, and F ２ ＋ wherein x is an integer equal to or greater than u, u is an integer equal to or greater than 1, y is an integer equal to or greater than v, and v is an integer equal to or greater than 1. (b) the fluorine compound is represented by the formula Q ｘ R ｚ F ｙ wherein Q and R are elements capable of forming bonds with fluorine (F), and have the formula Q ｕ R ｗ F ｖ ＋ , F+, and F ２ ＋ wherein x is an integer equal to or greater than u, u is an integer equal to or greater than 1, y is an integer equal to or greater than v, v is an integer equal to or greater than 1, z is an integer equal to or greater than w, and w is an integer equal to or greater than 1. (c) the fluorine compound is represented by the formula F ｙ and the fluorine ion species has the formula F ｖ ＋ where y is an integer equal to or greater than v and v is an integer equal to or greater than 1; or (d) Formula Q ｘ F ｙ , Q ｘ R ｚ F ｙ , and F ｙ A mixture of any two or more of the compounds The system of claim 1 .

8. The fluorine compound is F ２ , B.F. ３ , BHF, BHF ２ , B ２ F ４ , SiF ４ , Si ２ F ６ , SiHF ３ , SiH ２ F ２ , SiH ３ F, Si ２ H ３ F ３ , Si ２ H ５ F, Si ２ H.F. ５ , GeF ４ , Ge ２ F ４ , Ge ２ F ６ , GeHF ３ , GeH ２ F ２ , GeH ３ F, P.F. ３ , P.F. ５ , P.H.F. ２ , P.H. ２ F, P.H. ３ F ２ , P ２ HF, AsF ３ , AsF ５ , AsHF ２ , A.S.H. ２ F, A.S.H. ３ F ２ , SbF3, SbF ５ , XeF ２ , XeF ４ , XeF ６ , W.F. ６ , MoF ６ , C ｎ F ２ｎ＋２ , C ｎ F ２ｎ , C ｎ F ２ｎ－２ , C ｎ H ｘ F ２ｎ＋２－ｘ , C ｎ H ｘ F ２ｎ－ｘ , C ｎ H ｘ F ２ｎ－２－ｘ , COF ２ , S.F. ６ , S.F. ４ , SeF ６ , N.F. ３ , N ２ F ４ , N.H.F. ２ , N.H. ２ F, N.H.F., N ２ H ３ 8. The system of claim 7, wherein n is an integer ranging from 1 to 3, and x is 0, 1, or 2.

9. H ２ , B ２ H ６ , SiH ４ , Si ２ H ６ , GeH ４ , Ge ２ H ６ , P.H. ３ , A.S.H. ３ CH ４ , C ２ H ６ , C ｘ H ｙ [wherein x and y are 1 or more], NH ３ , and N ２ H ４ 10. The system of claim 1, further comprising a hydrogen or hydride-containing gas source selected from the group consisting of:

10. O ２ , O ３ , H ２ O, H ２ O ２ , CO, CO ２ , NO, NO ２ , N ２ O, N ４ O, N ２ O ３ , N ２ O ４ , N ２ O ５ , and N ２ O ６ 10. The system of claim 1, further comprising a source of oxygen-containing gas selected from the group consisting of:

11. 10. The system of claim 1, further comprising a source of inert gas selected from the group consisting of nitrogen, helium, neon, argon, krypton, and xenon.

12. 1. A method for implanting one or more fluorine ion species into a substrate, comprising: providing a system including a gas source including a fluorine compound, the fluorine compound capable of generating at least one fluorine ion species when ionized, the arc chamber including one or more materials including a graphite-containing material, a carbide-containing material, a fluoride-containing material, a nitride-containing material, an oxide-containing material, or a ceramic; operating the system to implant the one or more fluorine ion species into the substrate; Including, A substrate is present in a process chamber; method.

13. 13. The method of claim 12, wherein the system includes a tungsten arc chamber liner and arc chamber piece, operating the system generates tungsten fluoride, and the one or more materials include a graphite-containing material, a carbide-containing material, a fluoride-containing, nitride-containing, oxide-containing material, or a ceramic that reduces formation of tungsten fluoride in the arc chamber and improves fluorine ion species beam current, improves source life, or both.

14. flowing the fluorine compound into the arc chamber at a predetermined flow rate; generating the fluorine ion species from the fluorine compound at a predetermined arc power and source magnetic field, the fluorine ion species comprising a desired fluorine ion species for substrate implantation; Including, the flow rate, arc power, and source magnetic field are selected to provide a beam current optimized for the desired fluorine ion species; The method of claim 12.

15. The method of claim 12 , wherein the fluorine ion species comprises F+ ions.

16. 15. The method of claim 14, wherein the desired fluorine ion species is implanted into the substrate at a desired depth with a selected energy using the selected flow rate, arc power, and source magnetic field.

17. The method of claim 14, wherein the arc power is in the range of 5W to 1500W.

18. The method of claim 14, wherein the arc power is generated at an arc voltage in the range of 30V to 150V.

19. The method of claim 14, wherein the flow rate is in the range of 0.2 sccm to 10 sccm.

20. The method of claim 12, further comprising flowing a hydrogen or hydride-containing gas into the arc chamber at a rate between 0.05 sccm and 10 sccm.

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