Substrate processing apparatus and interlocking method thereof

Abstract

To protect equipment by preventing damage caused by a RF power source, and maintain the uniformity of a thin film deposited on a substrate.SOLUTION: In a substrate processing apparatus and an interlocking method thereof, when the temperatures of the upper and lower electrodes in a process chamber exceed a user's set range, an interlock signal is generated to cut off the application of a RF power source into the substrate processing apparatus. In an emergency situation in which the temperatures of the upper and lower electrodes, the temperature difference between them, the distance between the electrodes, and the resistance values of the electrodes are not within the user's set range, an interlock signal and alarm are generated to cut off the application of the RF power source into the substrate processing apparatus.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, when the temperature of the upper electrode and the lower electrode, the temperature difference value, the distance between the electrodes, or the resistance value of the electrodes in the process chamber exceeds the user's set range, an interlock signal is generated to cut off the supply of RF power to the substrate processing apparatus. The present invention relates to a substrate processing apparatus and an interlock method thereof.

Background Art

[0002] Generally, in order to manufacture semiconductor elements, flat panel displays, solar cells, etc., a predetermined thin film layer, thin film circuit pattern, or optical pattern must be formed on a substrate. For this purpose, processing steps for the substrate are performed, such as a deposition step of depositing a thin film of a specific substance on the substrate, a photolithography step of selectively exposing the thin film using a photosensitive substance, and an etching step of removing the thin film of the selectively exposed portion to form a pattern. At this time, a substrate processing apparatus that processes the substrate using plasma is used.

[0003] FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to the prior art.

[0004] As shown in FIG. 1, a substrate processing apparatus 100 according to the prior art includes a process chamber 110 that provides a reaction space for processing a substrate, a chamber lid 120 that covers the upper part of the process chamber 110, an electrode unit 130 including a first electrode 131 that is an upper electrode and a second electrode 132 that is a lower electrode, a substrate support unit 140, and an RF power supply unit 150. The substrate processing apparatus according to the prior art performs a processing step on the substrate by supplying gas to the substrate through the electrode unit 130 and applying RF power through the RF power supply unit 150 to generate plasma.

[0005] In the electrode part 130 of the substrate processing apparatus according to the prior art, there are included a first electrode 131 including a plurality of protruding electrodes 131a protruding toward the substrate side, and a second electrode 132 in which a plurality of second gas injection holes 132a through which the protruding electrodes 131a penetrate are formed, and an insulating means 133 for insulating the first electrode 131 and the second electrode 132 may be further included.

[0006] A plurality of first gas injection holes 131b are formed in the first electrode 131 so that a first gas can be injected onto the substrate S, and a plurality of second gas injection holes 132a are formed in the second electrode 132 so that a second gas can be injected onto the substrate S.

[0007] The substrate support part 140 is provided inside the process chamber 110 and supports a plurality of substrates S or one large-area substrate S.

[0008] The RF power supply part 150 applies one or more power supplies to at least one of the first electrode and the second electrode to plasmaize the gas injected into the reaction space.

[0009] In such a substrate processing apparatus 100, as the substrate processing process progresses, the temperature inside the process chamber rises, and the first electrode 131 and the second electrode 132 undergo thermal expansion due to the temperature rise. Generally, the second electrode 132 closer to the substrate support part 140 heated by the heater 141 has a higher temperature than the first electrode 131, and such a temperature difference causes a difference in thermal expansion between the first electrode 131 and the second electrode 132. When the difference in thermal expansion is severe, a short circuit occurs between the first electrode 131 and the second electrode 132.

[0010] Therefore, it is necessary to maintain the temperatures of the first electrode 131 and the second electrode 132 within a certain range during the progress of the process. At this time, the first electrode 131 is maintained in the range of 100°C to 120°C by a heat exchanger so that the supplied process gas is not thermally decomposed, and the second electrode 132 is maintained in the range of 200°C to 220°C.

[0011] However, in an emergency situation where the temperature of the first electrode 131 and the temperature of the second electrode 132 are not within the temperature range during the progress of the process, a short circuit occurs between the first electrode 131 and the second electrode 132. When an RF power supply is applied to the substrate processing apparatus in such an emergency situation where a short circuit occurs between the first electrode 131 and the second electrode 132, there is a problem that the equipment inside the substrate processing apparatus 100 is damaged by RF.

[0012] Also, when the temperature of the first electrode 131 and the temperature of the second electrode 132 are not within the above range during the progress of the process and a large difference in thermal expansion occurs between the first electrode 131 and the second electrode 132, when the first gas and the second gas are jetted adjacent to each other, an unnecessary reaction between the first gas and the second gas proceeds, and as a result, there is a problem that the uniformity of the thin film deposited on the substrate cannot be maintained.

Summary of the Invention

Problems to be Solved by the Invention

[0013] The problem to be solved by the present invention is to generate an interlock signal when the temperature of the upper electrode and the lower electrode, the temperature difference value, the distance between the electrodes, or the resistance value of the electrodes in the process chamber exceeds the set range of the user, and block the application of the RF power supply in the substrate processing apparatus, thereby preventing damage by the RF power supply and protecting the equipment, and maintaining the uniformity of the thin film deposited on the substrate. The present invention provides a substrate processing apparatus and an interlock method thereof.

Means for Solving the Problems

[0014] To achieve the above technical problem, a substrate processing apparatus according to an embodiment of the present invention includes a process chamber that provides a reaction space for processing a substrate, a first electrode provided inside the process chamber and facing the substrate, a second electrode located below the first electrode, a substrate support portion provided to face the first electrode or the second electrode and supporting the substrate, and an RF power supply unit that supplies one or more RF power supplies to at least one of the first electrode and the second electrode. When the temperature of the first electrode or the temperature of the second electrode is out of the respective set range, or when the temperature of the first electrode or the temperature of the substrate support portion is out of the respective set range, the supply of the RF power is stopped.

[0015] To achieve the above technical problem, a substrate processing apparatus according to another embodiment of the present invention includes a process chamber that provides a reaction space for processing a substrate, a first electrode provided inside the process chamber and facing the substrate, a second electrode located below the first electrode, a substrate support portion provided to face the first electrode or the second electrode and supporting the substrate, and an RF power supply unit that supplies one or more RF power supplies to at least one of the first electrode and the second electrode. When the temperature difference value between the temperature of the first electrode and the temperature of the second electrode is out of the first set range, or when the temperature difference value between the temperature of the first electrode and the temperature of the substrate support portion is out of the second set range, the supply of the RF power is stopped.

[0016] To achieve the above technical problem, a substrate processing apparatus according to another embodiment of the present invention includes a process chamber that provides a reaction space for processing a substrate, a first electrode provided inside the process chamber and facing the substrate, a second electrode located below the first electrode, a substrate support portion provided to face the first electrode or the second electrode and supporting the substrate, and an RF power supply unit that supplies one or more RF power supplies to at least one of the first electrode and the second electrode. When the resistance value of the first electrode or the second electrode is out of the set range, the supply of the RF power is stopped.

[0017] To achieve the above technical problem, a substrate processing apparatus according to another embodiment of the present invention includes a process chamber that provides a reaction space for processing a substrate, a first electrode provided inside the process chamber and facing the substrate, a second electrode located below the first electrode, a substrate support portion provided facing the first electrode or the second electrode and supporting the substrate, and an RF power supply unit that supplies one or more RF power supplies to at least one of the first electrode and the second electrode, and when the electrode distance between the first electrode and the second electrode is out of the set range, the supply of the RF power is stopped.

[0018] To achieve the above technical problem, an interlock method of a substrate processing apparatus according to an embodiment of the present invention includes a temperature measurement step of measuring the temperature of a first electrode and the temperature of at least one of a second electrode and a substrate support portion, a temperature comparison step of comparing the temperature of the first electrode or the temperature of the second electrode with their respective set ranges, or comparing the temperature of the first electrode or the temperature of the substrate support portion with their respective set ranges, an interlock signal generation step of generating an interlock signal according to the comparison result, and an RF power supply cutoff step of cutting off the supply of RF power according to the interlock signal.

[0019] To achieve the above technical problem, an interlock method of a substrate processing apparatus according to another embodiment of the present invention includes a temperature measurement step of measuring the temperature of a first electrode and the temperature of at least one of a second electrode and a substrate support portion, a temperature difference comparison step of comparing whether the temperature difference value between the temperature of the first electrode and the temperature of the second electrode is within a first set range, or comparing whether the temperature difference value between the temperature of the first electrode and the temperature of the substrate support portion is within a second set range, an interlock signal generation step of generating an interlock signal according to the comparison result, and an RF power supply cutoff step of cutting off the supply of RF power according to the interlock signal.

[0020] Another interlock method of a substrate processing apparatus according to an embodiment of the present invention for achieving the above technical problem includes an electrode distance measurement step of measuring an electrode distance between a first electrode and a second electrode, an electrode distance determination step of determining whether the electrode distance is within a set range, an interlock signal generation step of generating an interlock signal according to the determination result, and an RF power supply cutoff step of cutting off the supply of an RF power supply according to the interlock signal.

[0021] Another interlock method of a substrate processing apparatus according to an embodiment of the present invention for achieving the above technical problem includes a resistance value measurement step of measuring a resistance value of a first electrode or a second electrode, a resistance value comparison step of comparing and determining whether the resistance value of the first electrode or the second electrode is within a set range, an interlock signal generation step of generating an interlock signal according to the comparison result, and an RF power supply cutoff step of cutting off the supply of an RF power supply according to the interlock signal.

Advantages of the Invention

[0022] According to the substrate processing apparatus and its interlock method of the present invention, when the temperatures of the upper electrode and the lower electrode, the temperature difference value, the electrode distance, or the resistance value of the electrode deviate from the set range of the user, an interlock signal is generated to cut off the supply of the RF power supply in the substrate processing apparatus, thereby preventing damage caused by the RF power supply, protecting the equipment, and having the effect of maintaining the uniformity of the thin film deposited on the substrate.

Brief Description of the Drawings

[0023]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Mode for Carrying Out the Invention

[0024] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0025] FIG. 2 is a cross-sectional view showing an embodiment of a substrate processing apparatus according to the present invention.

[0026] As shown in FIG. 2, a substrate processing apparatus 200 according to the present invention can include a process chamber 210 that provides a reaction space for processing a substrate, a chamber lid 220 that covers the upper part of the process chamber 210, an electrode part 230 including a first electrode 231 that is an upper electrode and a second electrode 232 that is a lower electrode, a substrate support part 240, and an RF power supply part 250. The substrate processing apparatus 200 according to the present invention can perform a processing step on the substrate by supplying a process gas to the substrate through the electrode part 230 and applying an RF power through the RF power supply part 250 to generate plasma.

[0027] The electrode part 230 of the substrate processing apparatus 200 according to the present invention includes a first electrode 231 including a plurality of protruding electrodes 231a protruding toward the substrate side, and a second electrode 232 through which the protruding electrodes 231a penetrate, and can further include an insulating means 233 for insulating the first electrode 231 and the second electrode 232.

[0028] The substrate support part 240 is provided inside the process chamber 210 and supports a plurality of substrates S or one large-area substrate S. On the other hand, the RF power supply part 250 supplies one or more power supplies to at least one of the first electrode 231 and the second electrode 232 to plasmaize the gas injected into the reaction space.

[0029] Generally, the uniformity of the deposition of the thin film deposited on the substrate in the substrate processing apparatus is affected by changes in process variables such as the temperature of the electrode part and the substrate support part. When the substrate processing apparatus starts operating at the initial stage of the process, it may take a long time for the temperature of the electrode part to stabilize. The electrode part may be heated by radiation from the substrate, and some heat may be taken away by the process gas flowing through the electrode part. Such temperature changes reduce the uniformity of the thin film deposited on the substrate.

[0030] Therefore, it is preferable to connect a heat exchanger (not shown) to the electrode part 230 so that the temperature of the electrode part 230 can be maintained constant during the progress of the process. At this time, the temperature of the first electrode 231 of the electrode part 230 is preferably maintained in the range of 100°C to 120°C.

[0031] On the other hand, since the second electrode 232 is located close to the substrate support part 240 heated by the heater 241, its temperature is higher than that of the first electrode 231, and the temperature of the second electrode 232 is preferably maintained in the range of 200°C to 220°C. In the present invention, although it has been described that the temperature of the second electrode 232 is indirectly measured by the temperature of the substrate support part 240, in some cases, the temperature of the second electrode 232 may be directly measured by a temperature measuring means.

[0032] The substrate support part 240 is disposed inside the process chamber 210 at the lower part opposite to the electrode part 230, and the substrate S is supported thereon.

[0033] The thin film formed on the substrate varies greatly depending on the temperature of the substrate. Therefore, it is important to maintain the temperature of the substrate uniformly. In the present invention, a heater 241 is provided below the substrate support portion 240, and the substrate support portion 240 is heated by the heater 241, and the substrate S can be heated using the heated substrate support portion 240. Further, in order to maintain the temperature of the substrate constant for each process, the substrate support portion 240 is provided with temperature measuring means 242 such as a thermocouple to measure the temperature of the substrate support portion 240 so that the temperature of the substrate support portion 240 can be maintained constant.

[0034] At this time, the temperature of the substrate support portion 240 is preferably set to be maintained in the range of 350°C to 380°C in order to enable the substrate processing to proceed smoothly.

[0035] The RF power supply unit 250 can supply an RF power to at least one of the first electrode 231 and the second electrode 232 to form a plasma between the first electrode 231 and the second electrode 232.

[0036] In FIG. 2, the case where the RF power supply unit 250 is connected to the first electrode 231 is taken as an example for explanation. However, the RF power supply unit 250 may be connected to the second electrode 232, or in a state where it is connected to both the first electrode 231 and the second electrode 232, the voltage of the RF power applied to the first electrode 231 and the second electrode 232 may be made different.

[0037] On the other hand, the substrate processing apparatus 200 according to the present invention can further include a measurement unit 260, a comparison unit 270, and a control unit 280.

[0038] The measuring unit 260 can measure the temperature of the first electrode 231 of the electrode unit 230 and the temperature of at least one of the second electrode 232 and the substrate support unit 240. The temperature of the first electrode 231 of the electrode unit 230 is measured based on the temperature of a heat exchanger (not shown) connected to the first electrode 231, and the temperature of the substrate support unit is measured based on the temperature of a thermocoupler connected to the substrate support unit. On the other hand, the temperature of the second electrode may be measured indirectly by the temperature of the substrate support unit or directly by temperature measuring means.

[0039] The comparison unit 270 compares whether the temperature of the first electrode 231 and the temperature of the second electrode 232 or the temperature of the first electrode 231 and the temperature of the substrate support unit 240 transmitted from the measuring unit 260 are within their respective set ranges, and when they are outside the set ranges, an interlock signal Si for stopping the supply of the RF power supply can be generated and transmitted to the control unit.

[0040] At this time, the set range of the first electrode 231 is preferably set in the range of 100°C to 120°C, the set range of the second electrode 231 is preferably set in the range of 200°C to 220°C, and the set range of the substrate support unit 240 is preferably set in the range of 350°C to 380°C.

[0041] At this time, the comparison unit 270 can determine whether the temperature of the first electrode 231 and the temperature of the second electrode 232 and the temperature of the first electrode 231 and the temperature of the substrate support unit 240 transmitted from the measuring unit 260 are within their respective set ranges based on the first criterion and the second criterion or the third criterion, and determine whether the interlock signal Si can be generated.

[0042] The first criterion means the case where the temperature of the first electrode 231 or at least one of the temperatures of the second electrode 232 and the substrate support portion 240 is all at normal temperature of 50°C or lower. When the temperature of the first electrode 231 or at least one of the temperatures of the second electrode 232 and the substrate support portion 240 is all at normal temperature of 50°C or lower in this way, it can be determined that it is the initial state before the process starts, and there is no risk of damage caused by the RF power supply even if the RF power supply is supplied to the first electrode 231. Therefore, when corresponding to the first criterion, the comparison unit 270 does not generate the interlock signal Si.

[0043] The second criterion means the case where the temperature of the first electrode 231 or the temperature of the second electrode 232 is within their respective set ranges. At this time, the set range of the first electrode 231 is in the range of 100°C to 120°C, and the set range of the second electrode 232 is in the range of 200°C to 220°C.

[0044] Also, the third criterion means the case where the temperature of the first electrode 231 or the temperature of the substrate support portion 240 is within their respective set ranges. At this time, the set range of the first electrode 231 is in the range of 100°C to 120°C, and the set range of the substrate support portion is in the range of 350°C to 380°C.

[0045] The second criterion to the third criterion mean the case where the process is progressing and in a normal state. When the temperature of the first electrode 231 or the second electrode 232 satisfies the second criterion and the temperature of the first electrode 231 or the substrate support portion 240 satisfies the third criterion, there is no risk of damage caused by the RF power supply even if the RF power supply is supplied to the first electrode 231 or the second electrode 232. Therefore, when all of the second criterion to the third criterion are satisfied, the comparison unit 270 does not generate the interlock signal Si.

[0046] That is, the comparison unit 270 does not generate the interlock signal Si when corresponding to the first criterion at the initial stage of the process and when all of the second criterion and the third criterion, in which the process is progressing normally, are satisfied.

[0047] However, while the process is proceeding normally, if the temperature of the first electrode 231 or the temperature of the second electrode 232 exceeds their respective set ranges and does not satisfy the second criterion, or if the temperature of the first electrode 231 or the temperature of the substrate support portion 240 exceeds their respective set ranges and does not satisfy the third criterion, it is determined that an abnormal situation has occurred, and the interlock signal Si is generated and transmitted to the control unit 280.

[0048] On the other hand, when an abnormal situation occurs where the second criterion is not satisfied or the third criterion is not satisfied, the comparison unit 270, separately from generating the interlock signal Si and transmitting it to the control unit 280, may generate an alarm signal such as a warning sound or a flashing emergency light, so that the user manually stops the supply of the RF power.

[0049] When the interlock signal Si is generated by the comparison unit 270 and input, the control unit 280 can cut off the RF power supplied from the RF power supply unit 250 to the first electrode 231 or the second electrode 232.

[0050] As described above, based on the temperature of the first electrode 231 transmitted from the measurement unit 260 by the comparison unit 270 and the temperature of at least one of the second electrode 232 and the substrate support portion 240, it is compared whether the temperature of the first electrode 231 or the temperature of the second electrode 232 is within their respective set ranges, or whether the temperature of the first electrode 231 or the temperature of the substrate support portion 240 is within their respective set ranges. When it exceeds the set range, an example has been described in which an interlock signal Si for stopping the supply of RF power is generated and transmitted to the control unit.

[0051] Hereinafter, an example will be described in which the comparison unit 270 compares whether the temperature difference value between the temperature of the first electrode 231 and the temperature of the second electrode 232 transmitted from the measurement unit 260 is within a first set range, and if it is outside the first set range, or compares whether the temperature difference value between the temperature of the first electrode 231 and the temperature of the substrate support unit 240 is within a second set range, and if it is outside the second set range, an interlock signal Si for stopping the supply of the RF power supply is generated and transmitted to the control unit.

[0052] As shown in FIG. 2, the substrate processing apparatus 200 according to another embodiment of the present invention may further include a measurement unit 260, a comparison unit 270, and a control unit 280.

[0053] The measurement unit 260 can measure the temperature of the first electrode 231 and at least one of the temperatures of the second electrode 232 and the substrate support unit 240. The temperature of the first electrode 231 is measured based on the temperature of a heat exchanger (not shown) connected to the first electrode 231. The temperature of the substrate support unit 240 is measured based on the temperature of a temperature measuring means 242 such as a thermocoupler connected to the substrate support unit 240. On the other hand, the temperature of the second electrode 232 may be measured indirectly by the temperature of the substrate support unit 240 or directly by a temperature measuring means.

[0054] The comparison unit 270 compares whether the temperature difference value between the temperature of the first electrode 231 and the temperature of the second electrode 232 transmitted from the measurement unit 260 is within a first set range, and if it is outside the first set range, or compares whether the temperature difference value between the temperature of the first electrode 231 and the temperature of the substrate support unit 240 is within a second set range, and if it is outside the second set range, an interlock signal Si for stopping the supply of the RF power supply can be generated and transmitted to the control unit.

[0055] Generally, during the process, the temperature of the first electrode 231 is maintained in the range of 100°C to 120°C, the temperature of the second electrode 232 is maintained in the range of 200°C to 220°C, and the temperature of the substrate support portion 240 is maintained in the range of 350°C to 380°C. Therefore, the first set range for the temperature difference between the temperature of the first electrode 231 and the temperature of the second electrode 232 is preferably set to 80°C to 120°C, and the second set range for the temperature difference between the temperature of the first electrode 231 and the temperature of the substrate support portion 240 is preferably set to 230°C to 280°C.

[0056] At this time, the comparison unit 270 can determine whether an interlock signal Si can be generated based on the fourth to sixth criteria as to whether the temperature difference value between the temperature of the first electrode 231 and the temperature of the second electrode 232 transmitted from the measurement unit 260 is within the first set range and whether the temperature difference value between the temperature of the first electrode 231 and the temperature of the substrate support portion 240 is within the second set range.

[0057] The fourth criterion means that the temperature of the first electrode 231 or at least one of the temperatures of the second electrode 232 and the substrate support portion 240 is all at normal temperature of 50°C or lower. In this way, when the temperature of the first electrode 231 or at least one of the temperatures of the second electrode 232 and the substrate support portion 240 is all at normal temperature of 50°C or lower, it can be determined that it is the initial state before the process starts, and there is no risk of damage caused by the RF power supply even if the RF power supply is supplied to the first electrode 231 or the second electrode 232. Therefore, when the comparison unit 270 corresponds to the fourth criterion, it does not generate an interlock signal Si.

[0058] The fifth criterion means that the temperature difference value between the temperature of the first electrode 231 and the temperature of the second electrode 232 is within the first set range, that is, in the range of 80°C to 120°C. The sixth criterion means that the temperature difference value between the temperature of the first electrode 231 and the temperature of the substrate support portion 240 is within the second set range, that is, in the range of 230°C to 280°C.

[0059] The fifth and sixth criteria indicate that the process is in a normal progress state. When the temperature difference value between the first electrode 231 and the second electrode 232 satisfies the fifth criterion and the temperature difference value between the first electrode 231 and the substrate support portion 240 satisfies the sixth criterion, there is no risk of damage caused by the RF power supply even if the RF power supply is supplied to the first electrode 231 or the second electrode 232. Therefore, when the comparison unit 270 satisfies the fifth and sixth criteria, it does not generate the interlock signal Si.

[0060] That is, the comparison unit 270 does not generate the interlock signal Si when it corresponds to the fourth criterion at the initial stage of the process and when it satisfies the fifth and sixth criteria in which the process is in a normal progress state.

[0061] However, during the normal progress of the process, when the temperature difference value between the first electrode 231 and the second electrode 232 deviates from the range of 80°C to 120°C which is the first set range and does not satisfy the fifth criterion, and when the temperature difference value between the first electrode 231 and the substrate support portion 240 deviates from the range of 230°C to 280°C which is the second set range and does not satisfy the sixth criterion, it is determined that an abnormal situation has occurred, and the interlock signal Si is generated and transmitted to the control unit 280.

[0062] On the other hand, when an abnormal situation in which the fifth or sixth criterion is not satisfied occurs, the comparison unit 270 generates the interlock signal Si and transmits it to the control unit 280. Separately, an alarm signal such as a warning sound or a flashing emergency light may be generated to allow the user to manually stop the supply of the RF power supply.

[0063] When the interlock signal Si is generated and input from the comparison unit 270, the control unit 280 can cut off the RF power supply supplied from the RF power supply unit 250 to the first electrode 231 or the second electrode 232.

[0064] Hereinafter, an embodiment will be described in which the comparison unit 270 compares whether the resistance value of the first electrode 231 or the second electrode 232 transmitted from the measurement unit 260 is within a set range, and when it is out of the set range, generates an interlock signal Si for stopping the supply of the RF power supply and transmits it to the control unit 280.

[0065] As shown in FIG. 2, the substrate processing apparatus 200 according to another embodiment of the present invention may further include a measurement unit 260, a comparison unit 270, and a control unit 280.

[0066] The measurement unit 260 can measure the resistance value of the first electrode or the second electrode by turning on and off the switch according to Ohm's law and Kirchhoff's law. At this time, the resistance value of the first electrode or the second electrode may be measured using a resistance measuring device equipped with a probe, or may be measured by a simple circuit configuration including a switch, a voltmeter, and an ammeter. As an example, the measurement unit 260 can measure the resistance value of the first electrode or the second electrode by bringing the probe of the resistance measuring device into contact with the first electrode or the second electrode in a state where the RF power supply is not supplied. The resistance of the first electrode or the second electrode measured at this time may specifically be an insulation resistance.

[0067] The comparison unit 270 compares whether the resistance value of the first electrode 231 or the second electrode 232 transmitted from the measurement unit 260 is within a set range, and when it is out of the set range, can generate an interlock signal Si for stopping the supply of the RF power supply and transmit it to the control unit.

[0068] Generally, the presence or absence of a short circuit between two adjacent electrodes can be determined by measuring the resistance value of the electrodes using a resistance measuring device. That is, when measuring the resistance value of any one of the electrodes and a resistance value close to infinity of several megaohms (MΩ) or more is measured, it can be determined that the two electrodes are not short-circuited in a state where current does not flow. On the other hand, when the measured resistance value is about several to several hundred ohms (Ω), it can be determined that the two electrodes are short-circuited in a state where current flows. Therefore, the setting range for the resistance value of the first electrode or the second electrode is preferably set to 1 megaohm (MΩ) to 1000 megaohms (MΩ).

[0069] At this time, the comparison unit 270 can determine whether the resistance value of the first electrode 231 measured and transmitted from the measurement unit 260 is within the set range, and determine whether an interlock signal Si can be generated. That is, when the resistance value of the first electrode 231 or the second electrode 232 measured and transmitted from the measurement unit 260 is outside the set range of 1 megaohm (MΩ) to 1000 megaohms (MΩ), the comparison unit 270 can generate an interlock signal Si to stop the supply of the RF power source and transmit it to the control unit 280.

[0070] On the other hand, when an abnormal situation occurs in which the resistance value of the first electrode 231 or the second electrode 232 is outside the set range, the comparison unit 270, separately from generating the interlock signal Si and transmitting it to the control unit 280, may generate an alarm signal such as a warning sound or a flashing emergency light, so that the user manually stops the supply of the RF power source.

[0071] When the interlock signal Si is generated and input from the comparison unit 270, the control unit 280 can cut off the RF power source supplied from the RF power supply unit 250 to the first electrode 231 or the second electrode 232.

[0072] FIG. 3 is a cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention.

[0073] The substrate processing apparatus 300 shown in FIG. 3 is the same as the substrate processing apparatus 200 shown in FIG. 2 in other configurations except that the measurement unit 260 and the configurations of the comparison unit 270 and the control unit 280 are replaced by the measurement unit 360, the determination unit 370, and the control unit 380.

[0074] The measurement unit 360 can measure the distance between the first electrode 331 and the second electrode 332. The measurement unit 360 may be composed of a view port and a camera capable of observing the inside of the substrate processing apparatus, or may be composed of sensing means such as a distance measurement sensor provided in the first electrode 331 and the second electrode 332.

[0075] The determination unit 370 can determine whether the distance between the electrodes measured by the measurement unit 360 is within a set range, and generate an interlock signal Si when it is out of the set range. At this time, when the first electrode 331 and the second electrode 332 are in contact, the determination unit 370 can determine that the distance between the electrodes is out of the set range and generate the interlock signal Si.

[0076] When the interlock signal Si is generated from the determination unit 370 and input, the control unit 380 can cut off the RF power supplied from the RF power supply unit 350 to the first electrode 331 or the second electrode 332.

[0077] FIG. 4 is a cross-sectional view showing a substrate processing apparatus according to still another embodiment of the present invention.

[0078] As shown in FIG. 4, a substrate processing apparatus 400 according to the present invention may include a process chamber 410 that provides a reaction space for processing a substrate, a chamber lid 420 that covers the upper part of the process chamber 410, a gas injection unit 430 including a first injection plate 431 and a second injection plate 432 facing the substrate support part, a substrate support part 440, and an RF power supply unit 450. The substrate processing apparatus 400 according to the present invention can perform a processing step on the substrate by supplying a process gas to the substrate through the gas injection unit 430 and applying an RF power through the RF power supply unit 450 to generate plasma.

[0079] The gas injection unit 430 of the substrate processing apparatus 400 according to the present invention includes a first injection plate 431 including a plurality of protruding nozzles 431a protruding toward the substrate side, and a second injection plate 432 in which a second gas injection hole 432a through which the protruding nozzles 431a penetrate is formed, and may further include an insulating means 433 for insulating the first injection plate 431 and the second injection plate 432.

[0080] A plurality of first gas injection holes 431b are formed in the first injection plate 431 so that a first gas can be injected onto the substrate S, and a plurality of second gas injection holes 432a are formed in the second injection plate 432 so that a second gas can be injected onto the substrate S.

[0081] In FIG. 4, the first gas injection holes 431b are shown as being formed in the protruding nozzles 431a. However, in some cases, the first gas injection holes 431b may not be formed in the protruding nozzles 431a, and the first gas injection holes 431b may be formed in a portion of the first injection plate 431 other than the protruding nozzles 431a.

[0082] The substrate support part 440 is disposed inside the process chamber 410 at the lower part facing the gas injection unit 430, and the substrate S is supported thereon.

[0083] The RF power supply unit 450 can supply RF power to at least one of the first injection plate 431 and the second injection plate 432 of the gas injection unit 430 to form plasma.

[0084] The configuration and operation of the measurement unit 460, the comparison unit 470, and the control unit 480 shown in FIG. 4 are the same as those of the measurement unit 260, the comparison unit 270, and the control unit 280 shown in FIG. 2.

[0085] FIG. 5 is a process flow diagram of an interlock method of a substrate processing apparatus according to an embodiment of the present invention.

[0086] As shown in FIG. 5, the interlock method of the substrate processing apparatus according to an embodiment of the present invention includes a temperature measurement step S510, a temperature comparison step S520, an interlock signal generation step S530, and an RF power supply cutoff step S540.

[0087] In the temperature measurement step S510, in a substrate processing apparatus including a process chamber, an electrode unit including a first electrode as an upper electrode and a second electrode as a lower electrode, a substrate support unit, and an RF power supply unit, the temperature of the first electrode and at least one of the temperature of the second electrode and the substrate support unit can be measured. At this time, the temperature of the first electrode is measured based on the temperature of the heat exchanger connected to the first electrode, and the temperature of the substrate support unit is measured based on the temperature of a thermocoupler connected to the substrate support unit. On the other hand, the temperature of the second electrode may be indirectly measured by the temperature of the substrate support unit or directly measured by a temperature measuring means.

[0088] In the temperature comparison step S520, the temperature of the first electrode or the temperature of the second electrode can be compared with their respective set ranges, or the temperature of the first electrode or the temperature of the substrate support can be compared with their respective set ranges. At this time, the set range of the first electrode is preferably set in the range of 100°C to 120°C, the set range of the second electrode is preferably set in the range of 200°C to 220°C, and the set range of the substrate support is preferably set in the range of 350°C to 380°C.

[0089] In the interlock signal generation step S530, according to the comparison result, when the temperature of the first electrode or the temperature of the second electrode is out of their respective set ranges, or when the temperature of the first electrode or the temperature of the substrate support is out of their respective set ranges, it is recognized as an abnormal situation, and the interlock signal can be generated.

[0090] In the RF power supply cutoff step S540, according to the interlock signal, the supply of RF power into the substrate processing apparatus can be cut off to prevent damage to the equipment caused by RF.

[0091] FIG. 6 is a process flow diagram of an interlock method for a substrate processing apparatus according to another embodiment of the present invention.

[0092] As shown in FIG. 6, the interlock method for a substrate processing apparatus according to another embodiment of the present invention includes a temperature measurement step S610, a temperature difference comparison step S620, an interlock signal generation step S630, and an RF power supply cutoff step S640.

[0093] In the temperature measurement step S610, in a substrate processing apparatus including a process chamber, an electrode part including a first electrode which is an upper electrode and a second electrode which is a lower electrode, a substrate support part, and an RF power supply part, the temperature of the first electrode and at least one temperature of the second electrode and the substrate support part can be measured. At this time, the temperature of the first electrode is measured based on the temperature of a heat exchanger connected to the first electrode, and the temperature of the substrate support part is measured based on the temperature of a thermocoupler connected to the substrate support part. On the other hand, the temperature of the second electrode may be indirectly measured by the temperature of the substrate support part, or may be directly measured by a temperature measuring means.

[0094] In the temperature difference comparison step S620, it is possible to compare the temperature difference value between the temperature of the first electrode and the temperature of the second electrode with a first set range for the temperature difference, or to compare the temperature difference value between the temperature of the first electrode and the temperature of the substrate support part with a second set range for the temperature difference. At this time, it is preferable to set the first set range in the range of 80°C to 120°C, and the second set range in the range of 230°C to 280°C.

[0095] In the interlock signal generation step S630, according to the comparison result, when the temperature difference value between the temperature of the first electrode and the temperature of the second electrode is out of the first set range, or when the temperature difference value between the temperature of the first electrode and the temperature of the substrate support part is out of the second set range, it is recognized as an abnormal situation, and the interlock signal can be generated.

[0096] In the RF power supply cutoff step S640, according to the interlock signal, the supply of RF power into the substrate processing apparatus can be cut off to prevent damage to the equipment by RF.

[0097] FIG. 7 is a process flow diagram of an interlock method for a substrate processing apparatus according to still another embodiment of the present invention.

[0098] As shown in FIG. 7, another interlock method of a substrate processing apparatus according to an embodiment of the present invention includes an electrode distance measurement step S710, an electrode distance comparison step S720, an interlock signal generation step S730, and an RF power supply cutoff step S740.

[0099] In the electrode distance measurement step S710, in a substrate processing apparatus including a process chamber, an electrode unit including a first electrode as an upper electrode and a second electrode as a lower electrode, a substrate support unit, and an RF power supply unit, the electrode distance between the first electrode 231 and the second electrode 232 can be measured. At this time, the electrode distance between the first electrode 231 and the second electrode 232 means the shortest distance between the protruding electrode 231a of the first electrode 231 and the second electrode 232 in an initial state or after the process progresses and thermal expansion is completed.

[0100] In the electrode distance determination step S720, it can be determined whether the electrode distance between the first electrode 231 and the second electrode 232 is within a set range. At this time, the set range is preferably set such that the first electrode 231 and the second electrode 232 do not come into contact.

[0101] In the interlock signal generation step S730, when the first electrode 231 and the second electrode 232 come into contact, it is determined that the electrode distance is out of the set range, recognized as an abnormal situation, and the interlock signal can be generated.

[0102] In the RF power supply cutoff step S740, in response to the interlock signal, the supply of RF power into the substrate processing apparatus can be cut off to prevent damage to the equipment due to RF.

[0103] FIG. 8 is a process flow diagram of an interlock method of a substrate processing apparatus according to still another embodiment of the present invention.

[0104] As shown in FIG. 8, an interlock method of a substrate processing apparatus according to still another embodiment of the present invention includes a resistance value measurement step S810, a resistance value comparison step S820, an interlock signal generation step S830, and an RF power supply cutoff step S840.

[0105] In the resistance value measurement step S810, in a substrate processing apparatus including a process chamber, an electrode part including a first electrode and a second electrode, a substrate support part, and an RF power supply part, the resistance value of the first electrode or the second electrode can be measured using a resistance measuring device. That is, with the RF power supply not being supplied, the probe of the resistance measuring device can be brought into contact with the first electrode or the second electrode to measure the resistance value of the first electrode or the second electrode. At this time, the resistance of the first electrode or the second electrode measured may specifically be the insulation resistance of the first electrode or the second electrode.

[0106] In the resistance value comparison step S820, it can be determined by comparing whether the measured resistance value of the first electrode or the second electrode is within a set range. At this time, the set range is preferably set in the range of 1 megaohm (MΩ) to 1000 megaohms (MΩ).

[0107] In the interlock signal generation step S830, when the resistance value of the first electrode or the second electrode is out of the set range, it can be recognized as an abnormal situation and the interlock signal can be generated.

[0108] In the RF power supply cutoff step S840, in response to the interlock signal, the supply of RF power into the substrate processing apparatus can be cut off to prevent damage to the equipment by RF.

[0109] As described above, the substrate processing apparatus according to the present invention generates an interlock signal and an alarm in an abnormal situation where the temperatures of the first electrode, the second electrode, and the substrate support part, the temperature difference value between the temperature of the first electrode and the temperature of the second electrode, the temperature difference value between the temperature of the first electrode and the temperature of the substrate support part, the inter-electrode distance between the first electrode and the second electrode, and the resistance value of the first electrode or the second electrode are not within the respective set ranges of the user, so as to prevent the RF power supply from being supplied.

[0110] That is, when all of the upper electrode and the lower electrode are in the initial state or all of the upper electrode and the lower electrode are within the set range of the user, the supply of the RF power supply is allowed. In an abnormal situation where this is not the case, an interlock signal is generated to cut off the supply of the RF power supply to the electrode part or the substrate support part, prevent damage caused by the RF power supply, protect the equipment, and improve the uniformity of the thin film deposited on the substrate.

[0111] As described above, the preferred embodiments of the present invention have been described in detail. However, the scope of the rights of the present invention is not limited thereto, and more various embodiments can be realized based on the basic concept of the present invention defined in the following claims, and these embodiments also belong to the scope of the rights of the present invention.

Claims

1. a process chamber providing a reaction space for processing a substrate; a first electrode provided inside the process chamber and facing the substrate; a second electrode located below the first electrode; a substrate support portion provided opposite the first electrode or the second electrode and supporting the substrate; an RF power supply unit that supplies one or more RF power sources to at least one of the first electrode and the second electrode; a measurement unit that measures only the temperature of the first electrode and the temperature of the second electrode, or that measures only the temperature of the first electrode and the temperature of the substrate support unit; a comparison unit that compares whether the temperature of the first electrode or the temperature of the second electrode is within a respective set range, or compares whether the temperature of the first electrode or the temperature of the substrate support part is within a respective set range, and generates an interlock signal if the temperature is outside the respective set range; a control unit that stops the supply of the RF power when the interlock signal is input, a supply of RF power to the substrate supporting portion being stopped when the temperature of the first electrode or the temperature of the second electrode falls outside of a set range, or when the temperature of the first electrode or the temperature of the substrate supporting portion falls outside of a set range.

2. The measurement unit includes: When the comparison unit compares whether the temperature of the first electrode or the temperature of the second electrode is within a respective set range, the comparison unit measures the temperature of the first electrode and the temperature of the second electrode, 2. The substrate processing apparatus according to claim 1, wherein the comparison unit measures the temperature of the first electrode and the temperature of the substrate support unit when comparing whether the temperature of the first electrode or the temperature of the substrate support unit is within a respective set range.

3. a process chamber providing a reaction space for processing a substrate; a first electrode provided inside the process chamber and facing the substrate; a second electrode located below the first electrode; a substrate support portion provided opposite the first electrode or the second electrode and supporting the substrate; an RF power supply unit that supplies one or more RF power sources to at least one of the first electrode and the second electrode; a measurement unit that measures only the temperature of the first electrode and the temperature of the second electrode, or that measures only the temperature of the first electrode and the temperature of the substrate support unit; a comparison unit that compares whether a temperature difference value between the temperature of the first electrode and the temperature of the second electrode is within the first set range, and if it is outside the first set range, compares whether a temperature difference value between the temperature of the first electrode and the temperature of the substrate support part is within the second set range, and if it is outside the second set range, generates an interlock signal; a control unit that stops the supply of the RF power when the interlock signal is input, a temperature difference value between the temperature of the first electrode and the temperature of the second electrode falls outside a first set range, or a temperature difference value between the temperature of the first electrode and the temperature of the substrate support part falls outside a second set range,

4. The measurement unit includes: When the comparison unit compares whether a temperature difference between the temperature of the first electrode and the temperature of the second electrode is within the first set range, the comparison unit measures the temperature of the first electrode and the temperature of the second electrode, 4. The substrate processing apparatus according to claim 3, wherein the comparison unit measures the temperature of the first electrode and the temperature of the substrate support part when comparing whether the temperature difference between the temperature of the first electrode and the temperature of the substrate support part is within the second set range.

5. a temperature measuring step of measuring only the temperature of the first electrode and the temperature of the second electrode, or measuring only the temperature of the first electrode and the temperature of the substrate support; a temperature comparison step of comparing the temperature of the first electrode or the temperature of the second electrode with a respective set range when only the temperature of the first electrode and the temperature of the second electrode are measured, or comparing the temperature of the first electrode or the temperature of the substrate support with a respective set range when only the temperature of the first electrode and the temperature of the substrate support are measured; an interlock signal generating step of generating an interlock signal in response to a result of the temperature comparing step; and an RF power supply cut-off step of cutting off the supply of RF power in response to the interlock signal, The interlock signal generating step generates the interlock signal when the temperature of the first electrode or the temperature of the second electrode falls outside of the respective set ranges, or when the temperature of the first electrode or the temperature of the substrate support part falls outside of the respective set ranges, as a result of the temperature comparing step.

6. a temperature measuring step of measuring only the temperature of the first electrode and the temperature of the second electrode, or measuring only the temperature of the first electrode and the temperature of the substrate support; a temperature difference comparison step of comparing whether a temperature difference value between the temperature of the first electrode and the temperature of the second electrode is within a first set range when only the temperatures of the first electrode and the second electrode are measured, or comparing whether a temperature difference value between the temperature of the first electrode and the temperature of the substrate support part is within a second set range when only the temperature of the first electrode and the temperature of the substrate support part are measured; an interlock signal generating step of generating an interlock signal in response to the comparison result; and an RF power supply cut-off step of cutting off the supply of RF power in response to the interlock signal, The interlock signal generating step generates the interlock signal when the temperature difference value between the temperature of the first electrode and the temperature of the second electrode falls outside the first set range, or when the temperature difference value between the temperature of the first electrode and the temperature of the substrate support part falls outside the second set range as a result of the temperature difference comparing step.

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