Plasma processing apparatus, plasma source, and plasma control method

Abstract

To provide a plasma processing apparatus and the like capable of generating high-density radicals while suppressing the influences of heat, electromagnetic waves, and ions.SOLUTION: A plasma processing apparatus includes a processing chamber, a substrate holding part, and a plasma source. The processing chamber provides a processing space for a substrate. The substrate holding part holds the substrate in the processing chamber. The plasma source is configured to supply plasma into the processing chamber, and includes a gas supply part, piping, an electromagnetic wave generator, an electromagnetic wave supply part, and a resonator array structure. The gas supply part supplies a raw material gas. The piping connects the gas supply part and the processing chamber. The electromagnetic wave generator generates electromagnetic waves for plasma excitation supplied into the piping. The electromagnetic wave supply part supplies the electromagnetic waves into the piping through a dielectric window provided in the piping. The resonator array structure is capable of resonating with the magnetic field components of the electromagnetic waves, is smaller in size than the wavelength of the electromagnetic waves, and includes a plurality of resonators arranged in a direction on the same plane.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present disclosure relates to a plasma processing apparatus, a plasma source, and a plasma control method.

Background Art

[0002] Patent Document 1 discloses an array antenna having a plurality of antennas and a plurality of coupling prevention elements arranged with an interval therebetween, each of the plurality of coupling prevention elements having a first member connected to a ceiling wall constituting a ground plane in a chamber and a second member connected to the tip or the vicinity thereof. Further, the method disclosed in Patent Document 2 includes providing a substrate in a reaction chamber, depositing a silicon carbide film having a first thickness on the substrate, exposing the silicon carbide film having the first thickness to remote hydrogen plasma treatment for densification of the silicon carbide film having the first thickness, depositing a silicon carbide film having a second thickness on the silicon carbide film having the first thickness, and exposing the silicon carbide film having the second thickness to remote hydrogen plasma treatment for densification of the silicon carbide film having the second thickness.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

Problems to be Solved by the Invention

[0004] The present disclosure provides a plasma processing apparatus, a plasma source, and a plasma control method capable of generating high-density radicals while suppressing the influence of heat, electromagnetic waves, and ions.

Means for Solving the Problems

[0005] A plasma processing apparatus according to one aspect of the present disclosure includes a processing chamber, a substrate holder, and a plasma source. The processing chamber is configured to provide a processing space for a substrate. The substrate holder is configured to hold the substrate inside the processing chamber. The plasma source is configured to supply plasma into the processing chamber and includes a gas supply unit, a pipe, an electromagnetic wave generator, an electromagnetic wave supply unit, and a resonator array structure. The gas supply unit is configured to supply a source gas. The pipe is configured to connect the gas supply unit and the processing chamber. The electromagnetic wave generator is configured to generate electromagnetic waves for exciting plasma supplied into the pipe. The electromagnetic wave supply unit is configured to supply the electromagnetic waves into the pipe through a dielectric window provided in the pipe. The resonator array structure is configured to be capable of resonating with a magnetic field component of the electromagnetic waves and have a size smaller than the wavelength of the electromagnetic waves, and includes a plurality of resonators arranged in the same plane direction.

Advantages of the Invention

[0006] According to the present disclosure, high-density radicals can be generated while suppressing the influence of heat, electromagnetic waves, and ions.

Brief Description of the Drawings

[0007]

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[0008] Embodiments of the plasma processing apparatus, plasma source, and plasma control method disclosed below will be described in detail with reference to the drawings. Note that the disclosed technology is not limited by the following embodiments.

[0009] Incidentally, in a plasma processing apparatus using microwaves for plasma excitation, the power of the microwaves supplied into the processing chamber may be increased in order to increase the electron density of the plasma. The higher the power of the microwaves supplied into the processing chamber, the higher the electron density of the plasma can be increased.

[0010] Here, it is known that when the electron density of the plasma reaches a certain upper limit value by increasing the power of the microwaves supplied into the processing chamber, the dielectric constant of the space in the processing chamber becomes negative. This upper limit value of the electron density is appropriately referred to as the "cutoff density". Further, the refractive index is known as an index indicating whether or not microwaves propagate through space. The refractive index N is expressed by the following formula (1). N = √ε√μ ···(1) However, ε: dielectric constant, μ: magnetic permeability

[0011] Since the magnetic permeability is generally positive, when the dielectric constant of the space in the processing chamber becomes negative, according to the above formula (1), the refractive index of the space in the processing chamber becomes a pure imaginary number. As a result, the microwaves are attenuated and cannot propagate through the space in the processing chamber. Thus, when the electron density of the plasma reaches the cutoff density, in the space in the processing chamber, since the microwaves cannot propagate, the power of the microwaves is not sufficiently absorbed by the plasma. As a result, there is a problem that the high-density formation over a wide range of the plasma generated in the processing chamber is inhibited. Note that although microwaves have been described as an example above, the same problem also exists in a plasma processing apparatus using electromagnetic waves in the very high frequency (VHF) to ultra high frequency (UHF) band.

[0012] In a plasma processing apparatus, an independent remote plasma method is known in which plasma generated in a plasma generation chamber, which is a separate space connected to a processing chamber by a pipe, is introduced into the processing chamber. In the independent remote plasma method, the effects of heat, electromagnetic waves, and ions from the plasma generation chamber (plasma source) are suppressed. However, since the distance between the plasma source and the substrate to be processed is long, the plasma diffuses, and the plasma density (radical density) may decrease. Further, when the processing gas and plasma are introduced from the plasma generation chamber to the processing chamber through pipes and nozzles, reflection, disappearance, and recombination due to collisions of ions and radicals occur, so the plasma density (radical density) may decrease. With such low-density radicals, the substrate processing speed decreases. Therefore, it is expected to generate high-density radicals while suppressing the effects of heat, electromagnetic waves, and ions.

[0013] (First Embodiment) [Configuration of Plasma Processing Apparatus] FIG. 1 is a block diagram showing an example of the configuration of a plasma processing apparatus according to the first embodiment. First, the outline of plasma generation by an independent remote plasma method in the plasma processing apparatus 1 will be described with reference to FIG. 1. As shown in FIG. 1, in the plasma processing apparatus 1, the control device 11 controls the RF (Radio Frequency) power supply 16 to generate an electromagnetic wave (magnetic field H) by the antenna 18, and supplies the electromagnetic wave to a plurality of resonators of the resonator array structure 100 installed in the pipe through the dielectric window 20. In the resonator array structure 100, plasma P is generated in the pipe by the resonance of the electromagnetic wave and the plurality of resonators. Note that an antenna that generates a rotating magnetic field and a resonator array structure in which a plurality of resonators are arranged in a direction that resonates with the rotating magnetic field may be used. As the plasma P flows through the pipe to the nozzle 41, ions are recombined, and radicals R flow from the pipe through the through-hole of the nozzle 41 into the processing chamber. At this time, the diameter of the through-hole of the nozzle 41 is such that ions do not pass from the pipe to the processing chamber. In the plasma processing apparatus 1, with the dielectric window 20 as a boundary, the control device 11 side is in an atmospheric atmosphere, and the pipe and the processing chamber side are in a vacuum atmosphere. In the present embodiment, from the RF power supply 16 to the resonator array structure 100, or from the RF power supply 16 to the nozzle 41 is represented as a remote plasma source.

[0014] FIG. 2 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the first embodiment. The plasma processing apparatus 1 includes an apparatus main body 10 and a control device (an example of a control unit) 11. The plasma processing apparatus 1 shown in FIG. 1 is configured as, for example, an independent remote plasma type plasma processing apparatus. The apparatus main body 10 includes a processing container 12, a stage 14, an RF (Radio Frequency) power supply (an example of an electromagnetic wave generator) 16, an antenna 18, a pipe 36, a gas supply unit 38, and a resonator array structure 100. The apparatus main body 10 also includes a nozzle 41. The nozzle 41 is provided at the upper part of the side wall 12a of the processing container 12. A remote plasma source 30 including at least the RF power supply 16, the antenna 18, and the resonator array structure 100 is provided in the pipe 36 that connects the gas supply unit 38 and the processing container 12. Note that the remote plasma source 30 may be configured to include the gas supply unit 38.

[0015] The processing container 12 is formed in a substantially cylindrical shape, for example, by aluminum or the like whose surface has been anodized, and provides a substantially cylindrical processing space S inside. Note that the processing container 12 and the processing space S are an example of a processing chamber. A stage 14 is disposed at substantially the center of the bottom surface of the processing container 12. Further, an exhaust port 12h for exhaust is provided on the bottom surface of the processing container 12. An exhaust device 56 having a vacuum pump such as a turbo molecular pump and an automatic pressure control valve or the like is connected to the exhaust port 12h via an exhaust pipe 54. The exhaust device 56 can reduce the pressure in the processing space S to a desired degree of vacuum. The processing container 12 is grounded for safety. An opening 12c for loading / unloading the workpiece WP is formed in the side wall 12a of the processing container 12. The opening 12c is opened and closed by a gate valve GB.

[0016] The workpiece WP is placed on the stage 14. The stage 14 has a substantially disc shape and is formed of ceramics such as AlN. Inside the stage 14, a lifting pin (not shown) for lifting and lowering the workpiece WP is provided so as to be able to project and retract with respect to the upper surface of the stage 14. The stage 14 has an electrostatic chuck on its upper surface and holds the workpiece WP. The electrode 14a of the electrostatic chuck is electrically connected to a DC power supply 64. The electrostatic chuck can adsorb and hold the workpiece WP on its upper surface by the electrostatic force generated by the DC voltage applied from the DC power supply 64. Note that a temperature control mechanism such as a refrigerant flow path and a heater (not shown) is provided inside the stage 14, and the temperature of the workpiece WP placed on the stage 14 is controlled.

[0017] The RF power supply 16 is coupled to the antenna 18 and is configured to generate a source RF signal (source RF power) for plasma generation via at least one impedance matching circuit. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 3000 MHz. In one embodiment, the RF power supply 16 may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna 18. Note that the RF power supply 16 is an example of an electromagnetic wave generator and an example of a high-frequency power supply as described above. Also, the antenna 18 is an example of an electromagnetic wave supply unit.

[0018] The antenna 18 includes one or more coils. In one embodiment, the antenna 18 includes a solenoid-shaped coil. That is, the antenna 18 is wound in a loop shape. Note that the opening of the antenna 18 may have any shape among a circle, an ellipse, and a polygon (such as a square, a triangle, etc.). The RF power supply 16 is connected to the antenna 18 and a source RF signal is supplied thereto. The magnetic field H generated by the antenna 18 is in a direction penetrating a plurality of resonators of the resonator array structure 100 installed on the side wall of the pipe 36. Note that the antenna 18 may be a planar coil formed in a substantially circular spiral shape (planar spiral shape) or the like.

[0019] The pipe 36 connects the gas supply unit 38 and the processing space S of the processing container 12. A nozzle 41 is provided at the end of the pipe 36 on the processing space S side. The other end of the pipe 36 is connected to the gas supply unit 38.

[0020] The gas supply unit 38 may include at least one gas source 38a, at least one valve 38b, and at least one flow controller 38c. In one embodiment, the gas supply unit 38 is configured to supply at least one process gas from the corresponding gas source 38a to the pipe 36 via the corresponding valve 38b and flow controller 38c. Each flow controller 38c may include, for example, a mass flow controller or a pressure-controlled flow controller. Further, the gas supply unit 38 may include one or more flow modulation devices that modulate or pulse the flow rate of at least one process gas.

[0021] FIG. 3 is a diagram showing an example of the configuration of a nozzle according to the first embodiment. As shown in FIG. 3, the nozzle 41 has a plurality of through holes 41a and is arranged to cover the end portion of the pipe 36 in the cross-sectional direction, and the process gas and radicals are supplied from the plurality of through holes 41a to the processing space S. The plurality of through holes 41a preferably have a diameter that does not allow the ions contained in the plasma generated in the internal space 36a of the pipe 36 to pass through to the processing space S. That is, the ions contained in the plasma recombine to become radicals when passing through the through holes 41a and are supplied to the processing space S. Note that the distance between the resonator array structure 100 and the nozzle 41 can be arbitrarily set.

[0022] FIG. 4 is a cross-sectional view showing an example of a pipe in the remote plasma source according to the first embodiment. As shown in FIG. 4, the resonator array structure 100 is installed on a part of the side wall of the pipe 36. In this case, the resonator array structure 100 also serves as the dielectric window 20. Plasma P is generated in the space of the internal space 36a of the pipe 36 that is in contact with the resonator array structure 100. In the following description, the cross-sectional direction orthogonal to the longitudinal direction of the pipe 36 is defined as the direction of the cross-section in FIG. 4. Further, the resonator array structure 100 may have a curved surface that conforms to the curved surface of the pipe 36.

[0023] Referring again to FIG. 2, the resonator array structure 100 is formed by arranging a plurality of resonators that can resonate with the magnetic field component of electromagnetic waves and are smaller in size than the wavelength of the electromagnetic waves. Note that the resonator array structure is also referred to as a metamaterial, and the resonator is also referred to as a meta-atom.

[0024] When the resonator array structure 100 is located on the side wall of the pipe 36, the electromagnetic waves supplied to the internal space 36a of the pipe 36 by the antenna 18 can be resonated with the plurality of resonators of the resonator array structure 100. By the resonance between the electromagnetic waves and the plurality of resonators, the electromagnetic waves can be efficiently supplied to the internal space 36a of the pipe 36 and the magnetic permeability of the processing space can be made negative. When the magnetic permeability of the internal space 36a is negative, even when the electron density of the plasma generated in the internal space 36a reaches the cutoff density and the dielectric constant of the internal space 36a is negative, the refractive index becomes a real number according to the above formula (1), so that the electromagnetic waves can propagate in the internal space 36a. As a result, even when the electron density of the plasma generated in the internal space 36a reaches the cutoff density, the electromagnetic waves can propagate beyond the skin depth of the plasma and the power of the electromagnetic waves is efficiently absorbed by the plasma. As a result, a high-density plasma can be generated over a wide range beyond the skin depth of the plasma. That is, according to the plasma processing apparatus 1 according to the present embodiment, when the resonator array structure 100 is located on the side wall of the pipe 36, the plasma can be made highly dense over a wide range in the internal space 36a.

[0025] Here, referring to FIGS. 4 and 5, the detailed configuration of the resonator array structure 100 will be described. FIG. 5 is a diagram showing an example of the configuration of the resonator array structure according to the first embodiment. FIG. 5 shows the resonator array structure 100 as viewed from the antenna 18 side of FIG. 2. The resonator array structure 100 is arranged, for example, such that its longitudinal direction coincides with the longitudinal direction of the pipe 36. In the present embodiment, the plasma P is generated on the internal space 36a side of the resonator array structure 100.

[0026] The resonator array structure 100 is formed by arranging a plurality of resonators 101 that can resonate with the magnetic field component of electromagnetic waves and have a size smaller than the wavelength of the electromagnetic waves in a lattice pattern. Also, the plurality of resonators 101 can also be described as being arranged in a direction parallel to a plane of the first surface 106, which will be described later, on the side where the area of the base of the resonator array structure 100 is large, that is, in the direction of the same plane. Specifically, as shown in FIG. 5, the plurality of resonators 101 are arranged in the same plane in the flat-plate resonator array structure 100. That is, the plurality of resonators 101 are arranged in a plane parallel to the longitudinal surface of the resonator array structure 100. That is, when viewed from the antenna 18 side, the C-shaped ring members 111 that are represented as being transmitted are arranged in a lattice pattern so that the C shape can be seen. In the resonator array structure 100, for example, resonators 101 are arranged in a row whose column direction (horizontal direction) fits within the diameter of the pipe 36 and whose row direction (vertical direction) fits within the diameter of the antenna 18. In the example of FIG. 5, the length L1 in the column direction and the length L2 in the row direction of the resonator array structure 100 are shown.

[0027] At this time, the boundaries of each of the plurality of resonators 101 are represented as the boundary 105, but in reality, the plurality of resonators 101 are integrally formed as the resonator array structure 100. Note that the plurality of resonators 101 may be formed separately and the resonator array structure 100 may be configured by fitting them into a lattice-shaped frame or adhering them to each other. Each of the plurality of resonators 101 constitutes a series resonance circuit composed of a capacitor equivalent element and an inductor equivalent element. The series resonance circuit is realized by patterning a conductor on a plane. The magnetic field H generated by the antenna 18 is in a direction passing through the C-shaped ring member 111.

[0028] FIG. 6 is a cross-sectional view showing an example of the A-A cross-section of FIG. 5. As shown in FIG. 6, in the A-A cross-section of the resonator array structure 100, the cross-sections of a plurality of resonators 101 appear side by side. Also, similar to FIG. 5, the boundaries of each of the plurality of resonators 101 are represented by boundary 105. Here, the first surface 106 of the resonator array structure 100 is a surface facing the internal space 36a side of the pipe 36, and the second surface 107 is a surface facing the antenna 18 side. That is, in FIG. 2, the resonator array structure 100 shown in FIG. 6 is arranged upside down.

[0029] FIG. 7 is a view showing an example of the plan view and the B-B cross-section of a single resonator according to the first embodiment. In FIG. 7, among a plurality of resonators 101 formed integrally, taking a certain resonator 101 as an example, a plan view 150 of the single resonator 101 and a cross-sectional view 151 of the B-B cross-section of the plan view 150 are shown. As shown in the plan view 150 and the cross-sectional view 151, the single resonator 101 is within the region surrounded by the boundary 105. That is, in the present embodiment, the resonator 101 is in a state where two C-shaped ring members 111 are each surrounded by a dielectric 112. The dielectric 112 is formed such that the thickness 109a from the first C-shaped ring member 111 to the first surface 106 is thinner than the thickness 109b from the second C-shaped ring member 111 to the second surface 107. Thereby, in the resonator array structure 100, plasma can be selectively generated on the first surface 106 side which is the internal space 36a side of the pipe 36. That is, the resonator array structure 100 can control the plasma generation surface according to the thickness of the dielectric 112 from each ring member 111 of the resonator 101 to the surface.

[0030] FIG. 8 is a cross-sectional view showing an example of the C-C cross-section of FIG. 7. FIG. 9 is a cross-sectional view showing an example of the D-D cross-section of FIG. 7. As shown in the cross-sectional view 151 of FIG. 7, FIG. 8, and FIG. 9, the single resonator 101 is composed of two C-shaped ring members 111 made of a conductor, and a dielectric 112 is disposed between the ring members 111 that are adjacent to each other in opposite directions. That is, in the resonator 101, the dielectric 112 is sandwiched between two C-shaped ring members 111 facing each other in opposite directions. Capacitor equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 111 and at both ends of each ring member 111, and coil equivalent elements are formed along each ring member 111. Thereby, the resonator 101 can constitute a series resonance circuit. In the resonator 101 shown in FIGS. 7 to 9, the number of arranged C-shaped ring members 111 (hereinafter, also appropriately referred to as the "number of stacked layers") is 2, but the number of stacked layers of the C-shaped ring members 111 may be greater than 2. In this case, the resonator 101 has a structure in which the C-shaped ring members 111 are arranged adjacent to each other in opposite directions, and a dielectric 112 is disposed between the C-shaped ring members 111.

[0031] Refer to FIG. 2 again. The control device 11 includes a processor, a memory, and an input / output interface. Programs and process recipes are stored in the memory. The processor reads and executes a program from the memory, and based on the process recipe stored in the memory, comprehensively controls each part of the apparatus main body 10 via the input / output interface.

[0032] When, for example, plasma P is generated in the internal space 36a of the pipe 36, the control device 11 controls so that the electromagnetic wave supplied to the internal space 36a by the antenna 18 resonates with the plurality of resonators 101 in a target frequency band higher than the resonance frequencies of the plurality of resonators 101. Here, the resonance frequency is, for example, the frequency at which the transmission characteristic value (for example, S21 value) of the plurality of resonators 101 becomes a minimum value.

[0033] Here, the resonance frequency of the resonator 101 will be described with reference to FIGS. 10 and 11. FIG. 10 is a diagram showing an example of the relationship between the S21 value of the resonator and the frequency of the electromagnetic wave. When the frequency of the electromagnetic wave supplied to the internal space 36a of the pipe 36 by the antenna 18 coincides with the resonance frequency Fr (= about 2.35 GHz) of each resonator 101, the S21 value of each resonator 101 becomes a minimum value, and resonance occurs between the electromagnetic wave and each resonator 101. In FIG. 10, although a microwave is described as an example of the electromagnetic wave, the same applies to the electromagnetic wave in the VHF band. The resonance between the electromagnetic wave and each resonator 101 is maintained even in a predetermined frequency band (for example, about 0.1 GHz) higher than the resonance frequency Fr of each resonator 101. In a predetermined frequency band higher than the resonance frequency Fr of each resonator 101, both the permittivity and the permeability can be made negative in the plasma generation region below the resonator array structure 100 in the internal space 36a due to the resonance between the electromagnetic wave and each resonator 101. Therefore, as can be seen from the above formula (1), the propagation of the electromagnetic wave in the plasma generation region below the resonator array structure 100 in the internal space 36a becomes possible. The target frequency band is set to a predetermined frequency band (for example, about 0.1 GHz) higher than the resonance frequency Fr of each resonator 101. The target frequency band is preferably, for example, within 0.05 times the resonance frequency Fr of each resonator 101.

[0034] FIG. 11 is an explanatory diagram showing an example of the calculation of the resonance frequency of the resonator according to the first embodiment. As shown in the cross-sectional view 152 of FIG. 11, the resonator 101 can be regarded as having a structure in which a dielectric 112 is sandwiched between two C-shaped ring members 111. At this time, when a magnetic field H passing through the C-shaped ring member 111 of the resonator 101 is generated, an induced current Ie is generated in the C-shaped ring member 111. In FIG. 11, the dielectric 112 surrounding the outside of the C-shaped ring member 111 is omitted.

[0035] On the one hand, the resonance frequency of the resonator 101 is obtained from the respective dimensions in the cross-sectional view 152 and the plan view 153 of FIG. 11. That is, the resonance frequency of the resonator 101 can be obtained from the dimensions of the C-shaped ring member 111 and the thickness of the dielectric 112 sandwiched between the two C-shaped ring members 111 as shown in the following formulas (2) to (5). Formula (2) is the inductance L of the resonator 101 MA is the formula for obtaining it. Formula (3) is the capacitance C of the resonator 101 MA Among them, the capacitance C corresponding to the upper half or the lower half of the plan view 153 half is the formula for obtaining it. Formula (4) is the capacitance C as the resonator 101 MA is the formula for obtaining it. Formula (5) is the formula for obtaining the resonance frequency Fr of the resonator 101

[0036]

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[0037] In formula (2), r represents the radius from the center of the C-shaped ring member 111 to the center of the width of the C shape, and μ0 represents the magnetic permeability of vacuum. In formula (3), C half represents the capacitance corresponding to the upper half or the lower half of the plan view 153 among the capacitances of the resonator 101. Also, in formula (3), ε is the permittivity, ε0 is the permittivity of vacuum (electric constant), S is the area of the upper half or the lower half of the C-shaped ring member 111, and d represents the interval between the two C-shaped ring members 111. Also, in formula (3), r out represents the outer radius of the C-shaped ring member 111, r in represents the inner radius of the C-shaped ring member 111, and Ssplit represents the area of the C-shaped gap of the C-shaped ring member 111. Note that S split is approximately obtained as the area of a rectangle from the width Wc of the C-shaped ring member 111 shown in the plan view 153 and the C-shaped gap g. Also, in Equation (3), d PTFE represents the distance between two C-shaped ring members 111 when polytetrafluoroethylene (PTFE) is used as the dielectric 112. As shown in the cross-sectional view 152, the thicknesses d1 of the two C-shaped ring members 111 are preferably the same thickness.

[0038] In Equation (5), the resonance frequency Fr of the resonator 101 is obtained based on the inductance L MA and the capacitance C MA obtained in Equations (2) and (4). Note that the resonance frequency Fr decreases as the outer radius r out and the inner radius r in of the C-shaped ring member 111 increase, and also decreases as the thickness d of the dielectric 112 sandwiched between the two C-shaped ring members 111 decreases. Also, the resonance frequency Fr decreases as the number of stacked C-shaped ring members 111 increases. That is, by adjusting the outer radius r out and the inner radius r in of the ring member 111 and the thickness d of the dielectric 112, resonators 101 having different resonance frequencies can be formed. Also, in this embodiment, the C-shaped ring member 111 is described as having a shape with a notch in a part of a circular ring, but it is not limited to this. The shape of the ring member is not limited to a circular ring, and may be, for example, a shape with a notch (corresponding to the gap g) in any ring such as an elliptical ring, a triangular ring, a square ring, or a polygonal ring. Also, the dielectric 112 can change the dielectric constant ε by changing the material, and is not limited to PTFE, and for example, SiN, SiC, Al2O3, etc. may be used.

[0039] As described above, in the resonator array structure 100 of the present embodiment, since the plurality of resonators 101 are arranged in the direction facing the opening of the antenna 18, the magnetic field H can penetrate the C-shaped ring member 111 of the resonator 101 to enable magnetic field resonance. Therefore, each resonator 101 of the resonator array structure 100 can resonate at the resonance frequency Fr.

[0040] Regarding the propagation of electromagnetic waves with respect to a plurality of resonators, the relationship between the resonance frequency, refractive index, dielectric constant, and permeability is reported by D.R. Smith, D.C. Vier, Th. Koschny, and C.M. Soukoulis et al. in "Electromagnetic parameter retrieval from inhomogeneous metamaterials" of "PHYSICAL REVIEW E 71, 036617 (2005)", for example.

[0041] Next, the generation of high-density radicals in the remote plasma source 30 in the plasma processing apparatus 1 will be described. As shown in FIG. 2, in the resonator array structure 100, since the magnetic field H is in the direction penetrating each resonator 101, each resonator 101 resonates, and plasma P is excited on the first surface 106 side of each resonator 101. That is, the first surface 106 side of the resonator array structure 100 becomes the plasma generation region. Since the process gas is supplied from the gas supply unit 38 to the processing space S in the processing container 12 in the internal space 36a of the pipe 36, a flow toward the processing space S is generated. Therefore, the process gas supplied from the gas supply unit 38 to the internal space 36a is excited with plasma P on the first surface 106 side of each resonator 101 and flows into the processing space S through each through-hole 41a of the nozzle 41. Each through-hole 41a of the nozzle 41 functions as an ion trap. That is, high-density radicals are supplied from each through-hole 41a of the nozzle 41 to the processing space S. The object to be processed WP is processed by the high-density radicals supplied to the processing space S.

[0042] Thus, in this embodiment, high-density radicals can be generated while suppressing the influence of heat, electromagnetic waves, and ions. That is, since the distance between the processing space S in which the object to be processed WP is disposed and the remote plasma source 30 is long and ions disappear, charge-up damage caused by ions can be suppressed. In addition, since the processing space S and the remote plasma source 30 are separated by the nozzle 41, heat damage due to thermal radiation, damage due to light, and the influence of electromagnetic waves can be suppressed. Further, since the influence of heat, electromagnetic waves, and ions can be suppressed, the wettability in surface treatment can be improved, and it is suitable for thin film formation (ALD: Atomic Layer Deposition) and microfabrication (ALE: Atomic Layer Etching). Furthermore, since the distance between the processing space S and the remote plasma source 30 is long and the processing gas and radicals are evenly mixed, uniform processing can be performed on the object to be processed WP. Also, the introduction position of the active gas containing radicals into the processing container 12 can be arbitrarily selected. Moreover, since high-density plasma is generated by the resonator array structure 100, the efficiency of radical generation is good, and the speed of substrate processing can be improved. In addition, since the cleaning gas spreads more widely in the processing container 12, the cleaning of the deposits attached to the side wall 12a etc. of the processing container 12 can be performed.

[0043] (Modification Example 1) Next, with reference to FIGS. 12 to 26, Modifications 1 to 6 of the first embodiment will be described. In each of the modifications described below, the same components as those of the apparatus main body 10 of the first embodiment are denoted by the same reference numerals, and the description of the overlapping components and operations is omitted. FIG. 12 is a schematic cross-sectional view showing an example of the configuration of the plasma processing apparatus according to Modification 1. The apparatus main body 10a of Modification 1 shown in FIG. 12 is obtained by changing the arrangement of the pipe 36 to the upper surface 12b of the processing container 12d with respect to the apparatus main body 10 of the first embodiment. In the apparatus main body 10a, for example, the pipe 36 is connected to the processing container 12d such that the nozzle 41 contacts the center of the upper surface 12b. In the example of FIG. 12, the arrangement of the resonator array structure 100 is changed to the upper part of the processing container 12d in accordance with the change in the arrangement of the pipe 36. However, the positional relationship between the resonator array structure 100 and the pipe 36 is not changed, and the resonator array structure 100 is provided on the side surface of the pipe 36. Further, the nozzle 41 may be, for example, a shower plate having a diameter approximately the same as that of the stage 14. In this way, in the apparatus main body 10a, since the upper surface 12b faces the upper surface of the workpiece WP placed on the stage 14, the in-plane uniformity of the workpiece WP can be further improved.

[0044] (Modification 2) FIG. 13 is a schematic cross-sectional view showing an example of the configuration of the plasma processing apparatus according to Modification 2. The apparatus main body 10b of Modification 2 shown in FIG. 13 is obtained by increasing the protruding amount of the pipe 36 into the processing container 12d with respect to the apparatus main body 10a of Modification 1 and bringing the nozzle 41 closer to the stage 14. In this way, in the apparatus main body 10b, the density of radicals in the vicinity of the workpiece WP can be improved as compared with the apparatus main body 10a of Modification 1.

[0045] (Modification 3) FIG. 14 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 3. The apparatus main body 10c of Modification 3 shown in FIG. 14 is obtained by providing a dielectric window 20 on the side wall of the pipe 36 separately from the resonator array structure 100 with respect to the apparatus main body 10 of the first embodiment, and using it as a remote plasma source 30a. In this way, in the remote plasma source 30a, since the resonator array structure 100 is arranged in the internal space 36a of the pipe 36, the width of the resonator array structure 100 in the cross-sectional direction of the pipe 36 can be made wider than that of the first embodiment. That is, the generation region of the plasma P can be made larger, and the density of radicals supplied to the processing space S can be further improved.

[0046] (Modification 4) FIG. 15 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 4. The apparatus main body 10d of Modification 4 shown in FIG. 15 further includes a pipe 37 for introducing another processing gas into the processing container 12e and a gas supply unit 38d with respect to the apparatus main body 10 of the first embodiment. Further, the apparatus main body 10d has an orifice 42 on the processing container 12e side of the pipe 36 instead of the nozzle 41. The orifice 42 functions as an ion trap in which ions disappear depending on its length instead of the nozzle 41. Note that the orifice 42 is an example of a gas injector. Further, the pipe 37 has an orifice similar to the orifice 42, for example, on the processing container 12e side of the pipe 37. In the apparatus main body 10d, the processing gas (carrier gas) supplied from the gas supply unit 38 is activated by the plasma P generated by the resonator array structure 100 and is supplied as an active gas 43a from the orifice 42 to the processing space S. Further, a processing gas 43b is supplied from the gas supply unit 38d and the pipe 37 to the processing space S. The active gas 43a and the processing gas 43b are mixed in the processing space S, and the processing gas 43b is activated by the active gas 43a to become a processing gas 43c and is supplied to the upper surface of the workpiece WP. In this way, in the apparatus main body 10d, a processing gas different from the plasma-excited processing gas can be supplied to the processing space S and activated.

[0047] (Modification 5) FIG. 16 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification 5. The apparatus main body 10e of Modification 5 shown in FIG. 16 is obtained by integrating the nozzle 41 and the resonator array structure 100 into the resonator array structure 200 with respect to the apparatus main body 10 of the first embodiment. The resonator array structure 200 is provided so as to close the cross-section of the pipe 36c on the processing chamber 12 side of the pipe 36c. Further, the apparatus main body 10e has pipes 36b and 36c instead of the pipe 36. Furthermore, a dielectric window 20a is provided at the connection portion 36d between the pipe 36b and the pipe 36c, and the antenna 18 is arranged so that the magnetic field H can be supplied to the resonator array structure 200 through the dielectric window 20a and the internal space 36a. That is, the apparatus main body 10e has a remote plasma source 30b instead of the remote plasma source 30.

[0048] The pipe 36b and the pipe 36c are connected at the connection portion 36d so as to be, for example, at a right angle. The dielectric window 20a is provided on the wall surface in the direction facing the plane of the resonator array structure 200 as viewed from the antenna 18 side. Note that the connection between the pipe 36b and the pipe 36c may be made at any angle as long as the magnetic field H from the antenna 18 can be supplied to the resonator array structure 200 through the dielectric window 20a.

[0049] FIG. 17 is a diagram showing an example of a cross section near the resonator array structure according to Modification 5. As shown in FIG. 17, the resonator array structure 200 is, for example, a flat-plate resonator array structure similar to the resonator array structure 100 of the first embodiment, and is provided at the end of the pipe 36c and has the same thickness as the side wall 12a. In FIG. 17, for the purpose of showing the cross section E-E, it is drawn to have different thicknesses. In the resonator array structure 200, plasma P is generated on the first surface 206 side. The plasma P generated on the first surface 206 side passes through the through hole 208 provided at the center of each resonator 201 described later, and is supplied to the second surface 207 side of the resonator array structure 200, that is, the processing space S. At this time, among the plasma P, ions are recombined by the through hole 208 and supplied to the processing space S as radicals. Here, the first surface 206 of the resonator array structure 200 is a surface facing the internal space 36a side, that is, the antenna 18 and the dielectric window 20a side, and the second surface 207 is a surface facing the processing space S side.

[0050] Here, with reference to FIG. 18, the detailed configuration of the resonator array structure 200 will be described. FIG. 18 is a plan view showing an example of the configuration of the resonator array structure according to Modification 5 as viewed from the upstream direction of the pipe. FIG. 18 shows the E-E cross section of the resonator array structure 200 as viewed from the internal space 36a side of FIG. 17, that is, the antenna 18 and the dielectric window 20a side. The resonator array structure 200 is arranged, for example, such that its longitudinal direction coincides with the cross-sectional direction of the pipe 36c (in a parallel direction). In Modification 5, plasma P is generated on the internal space 36a side of the pipe 36c of the resonator array structure 200.

[0051] The resonator array structure 200 is formed by arranging a plurality of resonators 201 that can resonate with the magnetic field component of electromagnetic waves and have a size smaller than the wavelength of the electromagnetic waves in a lattice pattern. Also, the plurality of resonators 201 can also be expressed as being arranged in the direction of a plane parallel to the first surface 206 on the wider side of the base area of the resonator array structure 200, that is, in the direction of the same plane. Specifically, as shown in FIG. 18, the plurality of resonators 201 are arranged in the direction of a plane parallel to the cross-sectional direction of the pipe 36c in the flat-plate resonator array structure 200. That is, when viewed from the antenna 18 side, the C-shaped ring members 211 that are represented as passing through are arranged in a lattice pattern so that the C-shape can be seen. In the resonator array structure 200, for example, among 6 rows and 6 columns, the resonators 201 with one at each corner omitted are arranged. That is, in the resonator array structure 200, for example, 8 resonators 201 are arranged in each quadrant. At this time, the boundaries of each of the plurality of resonators 201 are represented as the boundary 205, but actually, the plurality of resonators 201 are integrally formed as the resonator array structure 200. Note that the plurality of resonators 201 may be formed separately and the resonator array structure 200 may be configured by fitting them into a lattice-shaped frame or adhering them to each other. Each of the plurality of resonators 201 constitutes a series resonance circuit composed of a capacitor equivalent element and an inductor equivalent element. The series resonance circuit is realized by patterning a conductor on a plane. Note that the magnetic field H generated by the antenna 18 is in the direction of passing through the C-shaped ring member 211.

[0052] FIG. 19 is a cross-sectional view showing an example of the F-F cross-section of FIG. 18. As shown in FIG. 19, in the F-F cross-section of the resonator array structure 200, the cross-sections of the plurality of resonators 201 appear side by side. Also, as in FIG. 18, the boundaries of each of the plurality of resonators 201 are represented by the boundary 205. Here, the first surface 206 of the resonator array structure 200 is, as described above, the surface facing the internal space 36a side, that is, the antenna 18 and the dielectric window 20a side, and the second surface 207 is the surface facing the processing space S side. Also, through holes 208 are provided at the centers of each of the plurality of resonators 201.

[0053] FIG. 20 is a diagram showing an example of a plan view and a G-G cross section of a single resonator according to Modification 5. In FIG. 20, among a plurality of resonators 201 formed integrally, taking a certain resonator 201 as an example, a plan view 250 of the single resonator 201 and a cross-sectional view 251 of the C-C cross section of the plan view 250 are shown. As shown in the plan view 250 and the cross-sectional view 251, the single resonator 201 is within a region surrounded by a boundary 205. That is, in Modification 5, the resonator 201 is in a state where two C-shaped ring members 211 are each surrounded by a dielectric 212. The dielectric 212 is formed such that the thickness 209a from the first C-shaped ring member 211 to the first surface 206 is thinner than the thickness 209b from the second C-shaped ring member 211 to the second surface 207. Thereby, in the resonator array structure 200, similarly to the resonator array structure 100, plasma can be selectively generated on the first surface 206 side, which is the inner space 36a side of the pipe 36c. That is, the resonator array structure 200 can control the plasma generation surface according to the thickness of the dielectric 212 from each ring member 211 of the resonator 201 to the surface.

[0054] The through hole 208 communicates the inner space 36a facing the first surface 206 and the processing space S facing the second surface 207. The through hole 208 has, for example, a circular cross section. The through hole 208 allows ions to recombine and pass unactivated processing gas and radicals from the inner space 36a of the pipe 36c to the processing space S by, for example, setting the diameter to 10 mm or less. Also, the through hole 208 preferably has a diameter of 2 mm or less, for example. That is, the through hole 208 has a diameter that does not allow ions to pass from the inner space 36a to the processing space S. That is, the radicals and unactivated processing gas contained in the plasma generated in the inner space 36a on the first surface 206 side are supplied to the processing space S on the second surface 207 side through the through hole 208. Also, the ions contained in the plasma recombine into radicals when passing through the through hole 208 and are similarly supplied to the processing space S. High-density radicals are supplied to the processing space S, and the workpiece WP is processed by the radicals.

[0055] FIG. 21 is a cross-sectional view showing an example of the I-I cross-section of FIG. 20. FIG. 22 is a cross-sectional view showing an example of the J-J cross-section of FIG. 20. As shown in the cross-sectional view 251, FIG. 21, and FIG. 22 of FIG. 20, the single resonator 201 is composed of two C-shaped ring members 211 made of a conductor, and a dielectric 212 is disposed between the ring members 211 that are adjacent to each other in opposite directions. That is, in the resonator 201, the dielectric 212 is sandwiched between two C-shaped ring members 211 that are opposite to each other. Further, a through hole 208 is provided at the center of the two C-shaped ring members 211 as described above. Capacitor equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 211 and at both ends of each ring member 211, and coil equivalent elements are formed along each ring member 211. Thereby, the resonator 201 can constitute a series resonance circuit. In the resonator 201 shown in FIGS. 20 to 22, the number of stacked layers of the C-shaped ring members 211 is 2, but the number of stacked layers of the C-shaped ring members 211 may be greater than 2. In this case, the resonator 201 has a structure in which the C-shaped ring members 211 are arranged adjacent to each other in opposite directions, and a dielectric 212 is disposed between the C-shaped ring members 211. Note that the description of the resonance frequency of the resonator 201 is omitted because it is the same as that of the resonator 101 in the first embodiment.

[0056] Here, taking the resonator array structure 200 as an example, the relationship between the position of the ring member and the plasma generation region will be described. FIGS. 23 and 24 are diagrams showing an example of the relationship between the position of the ring member and the plasma generation region. As shown in FIG. 23, in the resonator array structure 200, for the dielectric 212, the thickness 209a from the first C-shaped ring member 211 to the first surface 206 is thinner than the thickness 209b from the second C-shaped ring member 211 to the second surface 207. The dielectric 212 is more likely to absorb the power of the electromagnetic wave when the thickness from the C-shaped ring member 211 to the surface is thinner, and plasma is more likely to be excited on the surface of the dielectric 212 on the thinner side of the thickness of each resonator 201. For example, in the resonator array structure 200, by making the thickness 209b twice or more the thickness 209a, plasma is more likely to be excited on the first surface 206 side which is the 209a side of the thickness of each resonator 201.

[0057] On the other hand, in the resonator array structure 200a shown in FIG. 24, for the dielectric 212, the thickness 209c from the first C-shaped ring member 211 to the first surface 206a is thicker than the thickness 209d from the second C-shaped ring member 211 to the second surface 207a. In this case, by making the thickness 209c twice or more the thickness 209d, plasma is more likely to be excited on the second surface 207a side which is the 209d side of the thickness of each resonator 201A. Note that if the thicknesses of 209c and 209d are made substantially the same, plasma will be excited on both sides of the first surface 206a and the second surface 207a. As shown in FIGS. 23 and 24, the plasma generation surface can be controlled by the position of the C-shaped ring member 211 in the resonator 201. In Modification 5, since radicals are supplied to the processing space S, the resonator array structure 200 shown in FIG. 23 where the first surface 206 of the plasma generation surface is located on the inner space 36a side is preferable.

[0058] FIG. 25 is a diagram showing an example of the relationship between the position of the shield and the plasma generation region. The resonator array structure 200b shown in FIG. 25 is provided with a shield 213 between the second C-shaped ring member 211 of the resonator array structure 200 and the second surface 207. The shield 213 is a conductive member such as aluminum, for example, and a Faraday shield is formed. The shield 213 shields the electric field on the second surface 207 side of the resonator array structure 200b with respect to the electromagnetic wave radiated from the antenna 18. In the resonator array structure 200b, since no electric field is present on the second surface 207 side of the resonator array structure 200b and thus no voltage is applied, excitation and discharge of plasma on the second surface 307 side of the resonator array structure 200b, that is, on the processing space S side, can be suppressed.

[0059] As described above, in Modification 5, by using the flat resonator array structure 200, the nozzle 41 can be omitted. Further, in Modification 5, since the distance between the plasma generation region of the resonator array structure 200 and the processing space S is shorter than that in the first embodiment, a higher density of radicals can be supplied. Furthermore, the length of the pipe 36c is not limited as long as it can supply the magnetic field H from the antenna 18 to the resonator array structure 200, so the degree of freedom in arranging the remote plasma source 30b can be improved.

[0060] (Modification 6) FIG. 26 is a schematic cross-sectional view showing an example of the configuration of the plasma processing apparatus according to Modification 6. The apparatus main body 10f of Modification 6 shown in FIG. 26 has an antenna 18a, a dielectric window 20b, and pipes 36e instead of the antenna 18, the dielectric window 20a, and the pipes 36b and 36c with respect to the apparatus main body 10e of Modification 5. Note that the RF power supply 16, the antenna 18a, the dielectric window 20b, and the resonator array structure 200 constitute a remote plasma source 30c. In the apparatus main body 10f, for a part of the pipe 36e, the circumferential wall surface of the cross section serves as the dielectric window 20b, and the coil of the antenna 18a is wound so as to surround the dielectric window 20b. That is, the dielectric window 20b and the internal space of the pipe 36e are arranged inside the coil of the antenna 18a. The magnetic field H generated by the antenna 18a passes through the inside of the pipe 36e via the dielectric window 20b and is supplied to the resonator array structure 200. As described above, in the remote plasma source 30c, since the antenna 18a is arranged so as to surround the dielectric window 20b of the pipe 36e, the degree of freedom in arranging the remote plasma source 30c can be further improved.

[0061] (Second Embodiment) In the above-described first embodiment, the flat resonator array structures 100 and 200 are used. However, a resonator array structure having a cell shape in which each resonator forms a plurality of cells may be used. The embodiment in this case will be described as the second embodiment. Note that the plasma processing apparatus 2 in the second embodiment is the same as the first embodiment described above except for the configuration of the remote plasma source, and thus the description of the overlapping configuration and operation will be omitted.

[0062] FIG. 27 is a schematic cross-sectional view showing an example of the configuration of the plasma processing apparatus according to the second embodiment. As shown in FIG. 27, the apparatus main body 10g of the second embodiment has a remote plasma source 30d instead of the remote plasma source 30 of the first embodiment. The remote plasma source 30d includes an RF power supply 16, an antenna 18, a dielectric window 20c, and a resonator array structure 300 disposed in the pipe 36. Note that the remote plasma source 30d may include a gas supply unit 38 as in the first embodiment.

[0063] The dielectric window 20c is provided on the side wall of the pipe 36, similar to the dielectric window 20 of Modification 3. Note that the size of the dielectric window 20c is not limited as long as it can supply the magnetic field H to the resonator array structure 300.

[0064] FIG. 28 is a diagram showing an example of a cross section near the resonator array structure according to the second embodiment. As shown in FIG. 28, in the resonator array structure 300, a base plate 320, which will be described later, is arranged in a direction parallel to the cross-sectional direction of the pipe 36 at the position where the dielectric window 20c of the pipe 36 is located. In the resonator array structure 300, a flow of the processing gas is generated from the internal space 36g side toward the internal space 36f side through each through hole 325 of each cell C provided in the base plate 320. In the cell space of each cell C on the internal space 36f side, the processing gas is plasma-excited to generate plasma P. The plasma P generated in each cell C is supplied to the processing space S through the internal space 36f and the nozzle 41. At this time, among the plasma P, ions are recombined by each through hole 41a of the nozzle 41 and supplied to the processing space S as radicals.

[0065] FIG. 29 is a plan view showing an example of the configuration of the resonator array structure according to the second embodiment as viewed from the downstream direction of the pipe. The resonator array structure 300 shown in FIG. 29 is in a state as viewed from the downstream direction of the pipe 36, that is, from the nozzle 41 side. That is, the resonator array structure 300 is arranged in a direction in which the first surface is parallel to the cross-sectional direction of the pipe 36. In the following description, the structure of the resonator array structure 300 will be described with reference to the X-axis direction and the Y-axis direction in FIG. 29.

[0066] As shown in FIG. 29, in the resonator array structure 300, card-shaped resonators 301 are arranged in a lattice pattern. In the following description, the resonator array structure 300 may be referred to as the metamaterial 300, and the card-shaped resonator 301 may be referred to as the meta-atom 301. In the example of FIG. 29, the meta-atoms 301 are arranged such that the cells C surrounded by the meta-atoms 301 are formed in five columns in the X-axis direction and five rows in the Y-axis direction (cells C11 to C55). That is, the meta-atoms 301 are arranged in six rows and five columns, such as arrangement X11, X12, ···, X15, ···, X61, X62, ···, X65, so that the longitudinal direction is along the X-axis direction. Also, the meta-atoms 301 are arranged in five rows and six columns, such as arrangement Y11, Y21, ···, Y51, ···, Y16, Y26, ···, Y56, so that the longitudinal direction is along the Y-axis direction. Note that the cell C has a size greater than the outer shape of the C-shaped ring member (e.g., ring member 311B) of the meta-atom 301 in terms of the grid pitch and depth. That is, it can also be said that the meta-atoms 301 are arranged in a direction perpendicular to the first surface on the wider side of the base area of the metamaterial 300, that is, in the direction of the same plane for each of the X-axis direction and the Y-axis direction.

[0067] Furthermore, a through-hole 325 is formed at the center of the bottom surface of each cell C of the resonator array structure 300. Note that the meta-atoms 301 constituting the peripheral cells C and the meta-atoms 301 near the central cell C may have different resonance frequencies Fr. In the second embodiment, the direction of the magnetic field H is, for example, the direction penetrating each of the meta-atoms 301 arranged in both the X-axis direction and the Y-axis direction constituting each cell C. Note that the direction of the magnetic field H may be the X-axis direction or the Y-axis direction. In this case, the meta-atoms 301 in the direction in which the magnetic field H penetrates the C-shaped ring member 311 of the meta-atom 301 resonate with the magnetic field H.

[0068] The plurality of resonators 301 includes at least one of the resonators 301A and 301B shown in FIGS. 30 and 31. Each of the plurality of resonators 301 constitutes a series resonance circuit composed of a capacitor equivalent element and an inductor equivalent element. The series resonance circuit is realized by patterning a conductor on a plane.

[0069] FIG. 30 is a diagram showing an example of the configuration of a card-shaped resonator according to the second embodiment. The card-shaped resonator 301A shown in FIG. 30 has a structure in which two C-shaped ring members 311A made of a conductor and facing each other in opposite directions and concentrically are laminated on one surface of a dielectric plate 312A. Capacitor equivalent elements are formed at the opposing surfaces of the inner ring member 311A and the outer ring member 311A, and at both ends of each ring member 311A, and an inductor equivalent element is formed along each ring member 311A. Thereby, the resonator 301A can constitute a series resonance circuit.

[0070] FIG. 31 is a diagram showing an example of the configuration of a card-shaped resonator according to the second embodiment. The card-shaped resonator 301B shown in FIG. 31 has a structure in which two C-shaped ring members 311B made of a conductor are arranged adjacent to each other in opposite directions, and a dielectric plate 312B is arranged between the ring members 311B. That is, in the resonator 301B, the dielectric plate 312B is sandwiched between two C-shaped ring members 311B facing each other in opposite directions. Capacitor equivalent elements are formed at the opposing surfaces of the two C-shaped ring members 311B, and at both ends of each ring member 311B, and an inductor equivalent element is formed along each ring member 311B. Thereby, the resonator 301B can constitute a series resonance circuit. Note that the card-shaped resonator 301B can also be expressed as being formed in a card shape for each set of two C-shaped ring members 311B.

[0071] In the resonator 301B shown in FIG. 31, the "number of layers" of the ring member 311B is 2, but the number of layers of the ring member 311B may be greater than 2. FIG. 32 is a diagram showing another example of the configuration of the card-shaped resonator according to the second embodiment. The resonator 301B shown in FIG. 32 is composed of N (N≧2) C-shaped ring members 311B made of a conductor, and has a structure in which a dielectric plate 312B is disposed between the ring members 311B arranged adjacent to each other in opposite directions. With such a structure, the resonator 301B can also form a series resonance circuit. In the following description, when the resonators 301A and 301B are represented as the resonator 301, the ring members 311A and 311B may be represented as the ring member 311, and the dielectric plates 312A and 312B may be represented as the dielectric 312.

[0072] In addition, an insulating film may be formed on each of the plurality of resonators 301. FIG. 33 is a diagram showing an example of a cross section of the card-shaped resonator according to the second embodiment. FIG. 33 shows a side cross section of the resonator 301B shown in FIG. 31. An insulating film (an example of a dielectric film) 313 is formed on the surface of the resonator 301B. The material of the film 313 is, for example, ceramic. The thickness of the film 313 is, for example, in the range of 0.001 mm to 2 mm. By forming the insulating film 313 on each of the plurality of resonators 301, abnormal discharge in each of the plurality of resonators 301 can be suppressed.

[0073] FIG. 34 is a perspective view showing an example of the resonator array structure according to the second embodiment. In FIG. 34, in order to make the orientation of the meta-atoms 301 easy to understand, ring members are drawn on some of the meta-atoms 301, but in reality, it is assumed that the surface is covered with a dielectric (insulating film).

[0074] The resonator array structure 300 shown in FIG. 34 has a base plate 320. The base plate 320 is made of a dielectric material such as quartz or ceramics. The base plate 320 is provided with a plurality of grooves 321X in the X-axis direction and grooves 321Y in the Y-axis direction as grooves for fitting the meta-atoms 301. Further, as shown in FIG. 29, through holes 325 are provided in portions that are the bottom surfaces of the respective cells of the base plate 320.

[0075] Meta-atoms 301 are respectively fitted into the grooves 321X and 321Y. In the following description, the meta-atom 301 fitted into the groove 321X may be represented as the meta-atom 301X, and the meta-atom 301 fitted into the groove 321Y may be represented as the meta-atom 301Y. Also, the meta-atom 301X is assumed to be wider than the meta-atom 301Y, and the ends of the meta-atoms 301X are in contact with each other. The regions surrounded by the meta-atom 301X and the meta-atom 301Y are cells C, respectively. In the example of FIG. 34, cells of 5 rows and 5 columns of C11 to C55 are formed.

[0076] The side pressing member 323 is fixed to the base plate 320 using screws 324 so as to be in contact with one side of the meta-atoms 301Y of the arrangements Y11 to Y51 and the arrangements Y16 to Y56 among the outermost peripheral meta-atoms 301. Note that the side pressing member 323 and the screw 324 are examples of pressing members and are formed of ceramics such as alumina which is a dielectric member.

[0077] The side pressing member 327 is fixed to the base plate 320 using screws 328 so as to be in contact with one side of the meta-atoms 301X at the arrangements X11 to X15 and the arrangements X61 to X65 shown in Fig. 29 among the outermost peripheral meta-atoms 301. A space 327a is formed between the side pressing member 327 and the outermost peripheral meta-atom 301X. The space 327a is provided in consideration of plasma generation, but it may not be provided, and the side pressing member 327 and one side of the meta-atom 301X may be in direct contact. Note that the side pressing member 327 and the screw 328 are examples of pressing members and are formed of ceramics such as alumina which is a dielectric member.

[0078] The pressing member 329 presses the meta-atoms 301X and 301Y between the two side pressing members 327. The pressing member 329 is installed between the two side pressing members 327 so as to continuously press the upper part of the meta-atom 301Y in the longitudinal direction and also press the upper end part of the meta-atom 301X. That is, the pressing member 329 is installed parallel to the side pressing member 323. Note that the pressing member 329 is formed of ceramics such as alumina which is a dielectric member.

[0079] The member 330 is arranged above the side pressing member 327 to fix the pressing member 329. The end part of the pressing member 329 is sandwiched between the side pressing member 327 and the member 330. The member 330 is fixed to the side pressing member 327 by a screw 331. Note that the member 330 and the screw 331 are examples of pressing members and are formed of ceramics such as alumina which is a dielectric member.

[0080] The through-hole 325 communicates the internal space 36f of the pipe 36 facing each cell C with the internal space 36g of the pipe 36 on the side opposite to the surface of the base plate 320 where each cell C is formed, that is, the surface facing the lower surface of the base plate 320. That is, in FIG. 27, the processing gas flowing from the gas supply unit 38, which is the upstream side of the pipe 36, toward the processing space S can pass through the through-hole 325. The through-hole 325 has, for example, a circular cross-section. Note that the resonator array structure 300 may be configured such that the base plate 320 is omitted and each resonator 301 is connected by, for example, welding or the like.

[0081] Next, generation of high-density radicals in the remote plasma source 30d in the plasma processing apparatus 2 will be described. As shown in FIGS. 27 and 28, in the resonator array structure 300, since the magnetic field H is in the direction penetrating the resonator 301 of each cell C, the resonator 301 resonates and plasma P is excited in each cell C. That is, the cell space of each cell C becomes a plasma generation region. Since the processing gas is supplied from the gas supply unit 38 to the processing space S in the internal space 36f of the pipe 36, a flow toward the processing space S is generated. Therefore, the processing gas supplied from the gas supply unit 38 through each through-hole 325 to the internal space 36f is excited with plasma P in each cell C and flows into the processing space S through each through-hole 41a of the nozzle 41. Each through-hole 41a of the nozzle 41 functions as an ion trap. That is, high-density radicals are supplied from each through-hole 41a of the nozzle 41 to the processing space S. The object to be processed WP is processed by the high-density radicals supplied to the processing space S.

[0082] In this way, even when the cell-shaped resonator array structure 300 is used, high-density radicals can be generated while suppressing the influence of heat, electromagnetic waves, and ions, as in the first embodiment.

[0083] (Modification 7) Next, with reference to FIGS. 35 to 39, Modifications 7 and 8 of the second embodiment will be described. In each of the modifications described below, the same components as those of the apparatus main bodies 10 and 10g of the first and second embodiments are denoted by the same reference numerals, and the description of the overlapping components and operations is omitted. FIG. 35 is a schematic cross-sectional view showing an example of the configuration of the plasma processing apparatus according to Modification 7. The apparatus main body 10h of Modification 7 shown in FIG. 35 has a remote plasma source 30e instead of the remote plasma source 30d of the second embodiment. The remote plasma source 30e includes an RF power supply 16, an electromagnetic wave radiation mechanism 18b, a dielectric window 20d, a dielectric 20e, and a resonator array structure 400. Note that the remote plasma source 30e may include a gas supply unit 38 as in the second embodiment.

[0084] The electromagnetic wave radiation mechanism 18b corresponds to the antenna 18 of the second embodiment and supplies, for example, microwaves as electromagnetic waves to the resonator array structure 400. The electromagnetic wave radiation mechanism 18b has a cylindrical outer conductor and an inner conductor provided coaxially with the outer conductor inside the outer conductor. The electromagnetic wave radiation mechanism 18b includes a coaxial tube having an electromagnetic wave transmission path between the outer conductor and the inner conductor, and an antenna unit that radiates electromagnetic waves to the resonator array structure 400. A dielectric window 20d that forms a part of the wall surface of the pipe 36 is provided on the lower surface side of the antenna unit, and the lower surface thereof is in contact with the surface of the resonator array structure 400 on the side where the cell C is not formed. Note that the resonator array structure 400 is disposed in the pipe 36. The electromagnetic wave transmitted through the dielectric window 20d generates plasma in the cell space in each cell C of the resonator array structure 400 as a rotating magnetic field H1 centered on the inner conductor of the electromagnetic wave radiation mechanism 18b. Note that the rotating magnetic field H1 is caused by the power introduction structure in the electromagnetic wave radiation mechanism 18b, that is, the propagation of electromagnetic waves in the coaxial tube in the TEM mode. That is, on the lower surface of the dielectric window 20d where the resonator array structure 400 is disposed, the electromagnetic wave supplied from the antenna unit is in the TM01 mode, so that the direction of the magnetic field can be regarded as the rotating magnetic field H1.

[0085] The dielectric window 20d is provided on the side wall of the pipe 36, and a part thereof protrudes into the internal space 36h so as to be in contact with the resonator array structure 400. The dielectric 20e is disposed within the pipe 36, and together with the dielectric window 20d, sandwiches the resonator array structure 400 disposed at the central portion in the cross-sectional direction of the pipe 36. That is, the cross-section of the pipe 36 at the position where the dielectric window 20d and the like are disposed is in a state of being blocked by the dielectric window 20d, the resonator array structure 400, and the dielectric 20e in this order from the dielectric window 20d side. The processing gas flowing through the pipe 36 can flow toward the nozzle 41 by passing through the through-holes 415 of the resonators 401 constituting each cell C of the resonator array structure 400.

[0086] FIG. 36 is a cross-sectional view showing an example of the K-K cross-section of FIG. 35. As shown in FIG. 36, the resonator array structure 400 is a resonator array structure having the same cell shape as the resonator array structure 300 of the second embodiment. The resonator array structure 400 is provided with through-holes 415 in the resonators 401 arranged in the Y-axis direction of FIG. 36, which is substantially orthogonal to the direction in which the processing gas in the pipe 36 flows, instead of the through-holes 325 in the base plate 320 of the resonator array structure 300. That is, the resonator array structure 400 has each cell C formed by the resonators 301 arranged in the X-axis direction of FIG. 36 and the resonators 401 arranged in the Y-axis direction. In the resonators 301 and 401 of each cell C, since the rotating magnetic field H1 penetrates through the respective ring members (ring members 311 and 411), the resonators 301 and 401 can be resonated, and plasma can be excited in the cell space within each cell C.

[0087] FIG. 37 is a diagram showing an example of the configuration of a resonator according to Modification 7. The resonator 401 shown in FIG. 37 has a structure in which two C-shaped ring members 411 made of a conductor are arranged adjacent to each other in opposite directions, and a dielectric plate 412 is arranged between the ring members 411. That is, in the resonator 401, the dielectric plate 412 is sandwiched between two C-shaped ring members 411 facing each other in opposite directions. Capacitor equivalent elements are formed on the opposing surfaces of the two C-shaped ring members 411 and at both ends of each ring member 411, and coil equivalent elements are formed along each ring member 411. Thereby, the resonator 401 can constitute a series resonance circuit. Further, the resonator 401 has a through hole 415 at the center. By providing the through hole 415, in the cell C formed by the resonator 401 on the two opposing surfaces, gas and plasma can flow in and out between the cell C adjacent in the X-axis direction of FIG. 36. Note that the resonator 401 can also be expressed as being formed for each set of two C-shaped ring members 411. Further, in the following description, the dielectric plate 412 may be represented as the dielectric 412.

[0088] Thus, in Modification 7, even when using the electromagnetic wave radiation mechanism 18b that supplies the rotating magnetic field H1 and the cell-shaped resonator array structure 400, it is possible to generate high-density radicals while suppressing the influence of heat, electromagnetic waves, and ions, similar to the second embodiment.

[0089] (Modification 8) FIG. 38 is a schematic cross-sectional view showing an example of the configuration of the plasma processing apparatus according to Modification 8. The apparatus main body 10i of Modification 8 shown in FIG. 38 has a resonator array structure 300 that is inverted 180 degrees at the position of the nozzle 41 with respect to the apparatus main body 10g of the second embodiment, and supplies electromagnetic waves from the same position as in Modification 5 of the first embodiment. Further, the apparatus main body 10i has pipes 36b and 36c instead of the pipe 36, as in Modification 5 of the first embodiment. The resonator array structure 300 is provided on the processing vessel 12 side of the pipe 36c so as to close the cross-section of the pipe 36c. Further, a dielectric window 20a is provided at the connection portion 36d between the pipe 36b and the pipe 36c, and an electromagnetic wave radiation mechanism 18b is arranged so that a rotating magnetic field H1 can be supplied to the resonator array structure 300 through the dielectric window 20a. That is, the apparatus main body 10i has a remote plasma source 30f instead of the remote plasma source 30d. Note that the remote plasma source 30f may include a gas supply unit 38 as in the second embodiment.

[0090] The pipe 36b and the pipe 36c are connected at the connection portion 36d so as to be, for example, at a right angle. The dielectric window 20a is provided on the wall surface in the direction facing the surface on which each cell C of the resonator array structure 300 is formed as viewed from the electromagnetic wave radiation mechanism 18b side. Note that the connection between the pipe 36b and the pipe 36c may be made at any angle as long as the rotating magnetic field H1 from the electromagnetic wave radiation mechanism 18b can be supplied to the resonator array structure 300 through the dielectric window 20a.

[0091] The resonator array structure 300 is arranged with the surface on which each cell C is formed facing the upstream side of the pipe 36, that is, the internal space 36a side, as in Modification 5. In this case, the through-hole 325 has a diameter of, for example, 10 mm or less to recombine ions and allow radicals and unactivated processing gas to pass from the internal space 36a to the processing space S. Further, the through-hole 325 preferably has a diameter of 2 mm or less, for example. That is, the through-hole 325 has a diameter that does not allow ions to pass from the internal space 36a to the processing space S.

[0092] FIG. 39 is a diagram showing an example of a cross section near the resonator array structure according to Modification 8. As shown in FIG. 39, the resonator array structure 300 is provided at the end of the pipe 36c. For example, the base plate 320 has the same thickness as the side wall 12a. In FIG. 39, it is drawn to have a slightly different thickness. In the resonator array structure 300, plasma P is generated in the cell space of each cell C on the internal space 36a side. The plasma P generated in each cell C passes through each through hole 325 of each cell C provided in the base plate 320 and is supplied to the side where each cell C of the resonator array structure 300 is not formed, that is, the processing space S. At this time, among the plasma P, ions are recombined by the through holes 325 and supplied to the processing space S as radicals.

[0093] In this way, by combining the second embodiment and Modification 5, the nozzle 41 can be omitted. Further, in Modification 8, compared with the second embodiment, since the distance between the plasma generation region of the resonator array structure 300 and the processing space S is short, a higher density of radicals can be supplied. Furthermore, similar to Modification 5, the degree of freedom in arranging the remote plasma source 30f can be improved.

[0094] (Third Embodiment) In the above-described second embodiment, the resonator array structures 300 and 400 having a cell shape are used. However, a resonator array structure in which each resonator is arranged radially from the center of the resonator array structure may be used. The embodiment in this case will be described as the third embodiment. Note that the plasma processing apparatus 3 in the third embodiment is the same as the above-described first and second embodiments except for the configuration of the remote plasma source, and thus the description of the overlapping configuration and operation is omitted.

[0095] FIG. 40 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to the third embodiment. As shown in FIG. 40, the apparatus main body 10j of the third embodiment has a remote plasma source 30g instead of the remote plasma source 30d of the second embodiment. The remote plasma source 30g includes an RF power supply 16, an electromagnetic wave radiation mechanism 18b, a dielectric window 20a, and a resonator array structure 500 disposed in a pipe 36c. That is, in the third embodiment, in Modification 8, a nozzle 41 is provided and the resonator array structure 500 is disposed in the pipe 36c. Note that the remote plasma source 30g may include a gas supply unit 38 as in the second embodiment.

[0096] FIG. 41 is a perspective view showing an example of the resonator array structure according to the third embodiment. The resonator array structure 500 shown in FIG. 41 is formed to include a plurality of resonators 501 that can resonate with the magnetic field component of microwaves and have a size smaller than the wavelength of microwaves. That is, the plurality of resonators 501 can also be described as being arranged in a direction perpendicular to the first surface on the wider side of the area of the base of the resonator array structure 500, that is, in a direction of the same plane that can rotate about the center of the resonator array structure 500. Further, the plurality of resonators 501 form a plurality of strip-shaped resonators 520 in which a plurality of the resonators 501 are connected horizontally. In the example of FIG. 41, three resonators 501 are connected to form the strip-shaped resonator 520. The plurality of strip-shaped resonators 520 are arranged such that the short side of the strip shape is perpendicular to the plane of the base plate 510 and radially from the central axis of the electromagnetic wave radiation mechanism 18b. The rotating magnetic field H1 of the electromagnetic wave supplied from the electromagnetic wave radiation mechanism 18b penetrates the ring members 511 of the respective resonators 501 of the plurality of strip-shaped resonators 520.

[0097] The base plate 510 is provided with a plurality of through holes 525. Similar to the through holes 325 of the resonator array structure 300, the through holes 525 communicate the internal space 36f and the internal space 36g, allowing the processing gas to flow from the pipe 36b side to the pipe 36c side. Since the details of the resonator 501 are the same as those of the resonator 301B in the second embodiment, the description thereof is omitted. Each of the plurality of resonators 501 has a size less than 1 / 10 of the wavelength of the electromagnetic wave. Further, the resonator array structure 500 is arranged such that the side on which the strip-shaped resonator 520 is formed faces the downstream side of the pipe 36c, that is, the processing space S side. Note that the resonator array structure 500 may be configured such that the base plate 510 is omitted and each strip-shaped resonator 520 is connected by, for example, welding or the like.

[0098] Next, the generation of high-density radicals in the remote plasma source 30g in the plasma processing apparatus 3 will be described. As shown in FIG. 40, in the resonator array structure 500, since the rotating magnetic field H1 is in the direction penetrating each resonator 501 of the strip-shaped resonator 520, each resonator 501 resonates, and plasma P is excited on the surface of each resonator 501. That is, the vicinity of each strip-shaped resonator 520 becomes a plasma generation region. Since the processing gas is supplied from the gas supply unit 38 to the processing space S in the internal space 36f of the pipe 36c, a flow toward the processing space S is generated. Therefore, the processing gas supplied from the gas supply unit 38 through each through hole 525 to the internal space 36f is excited with plasma P in the vicinity of each strip-shaped resonator 520 and flows into the processing space S through each through hole 41a of the nozzle 41. Each through hole 41a of the nozzle 41 functions as an ion trap. That is, high-density radicals are supplied from each through hole 41a of the nozzle 41 to the processing space S. The object to be processed WP is processed by the high-density radicals supplied to the processing space S.

[0099] Thus, even when the radial resonator array structure 500 is used, high-density radicals can be generated while suppressing the influence of heat, electromagnetic waves, and ions, as in the first and second embodiments.

[0100] (Modification 9) Next, with reference to FIG. 42, Modification Example 9 of the third embodiment will be described. In Modification Example 9 described below, the same components as those of the apparatus main bodies 10, 10g, and 10j of the first to third embodiments are denoted by the same reference numerals, and the description of the overlapping components and operations will be omitted. FIG. 42 is a schematic cross-sectional view showing an example of the configuration of a plasma processing apparatus according to Modification Example 9. The apparatus main body 10k of Modification Example 9 shown in FIG. 42 is obtained by arranging a resonator array structure 500 that is inverted 180 degrees at the position of the nozzle 41 with respect to the apparatus main body 10j of the third embodiment. The resonator array structure 500 is provided so as to block the cross-section of the pipe 36c on the processing chamber 12 side of the pipe 36c. That is, the apparatus main body 10k has a remote plasma source 30h instead of the remote plasma source 30g. Note that the remote plasma source 30h may include a gas supply unit 38 as in the third embodiment.

[0101] Similar to Modification Example 8, the resonator array structure 500 is arranged such that the surface on which each strip-shaped resonator 520 is formed faces the upstream side of the pipe 36c, that is, the internal space 36a side. In this case, the through-hole 525 has a diameter of, for example, 10 mm or less to recombine ions and allow radicals and unactivated processing gas to pass from the internal space 36a to the processing space S. Further, the through-hole 325 preferably has a diameter of 2 mm or less, for example. That is, the through-hole 525 has a diameter that does not allow ions to pass from the internal space 36a to the processing space S.

[0102] As described above, in Modification Example 9, by combining the third embodiment and Modification Example 8, the nozzle 41 can be omitted. Further, in Modification Example 9, since the distance between the plasma generation region of the resonator array structure 500 and the processing space S is shorter than that in the third embodiment, a higher density of radicals can be supplied. Furthermore, similar to Modification Example 8, the degree of freedom in arranging the remote plasma source 30h can be improved.

[0103] (Fourth Embodiment) With respect to the above-described first to third embodiments, the plasma density may be further measured to control the flow rate of the processing gas and the power of the source RF signal. The embodiment in this case will be described as a fourth embodiment. Note that the plasma processing apparatus 4 in the fourth embodiment is the same as the above-described first to third embodiments except for the configuration of the insulating probe and the control based on the plasma density, and thus the description of the overlapping configurations and operations will be omitted.

[0104] FIG. 43 is a block diagram showing an example of the configuration of a plasma processing apparatus according to the fourth embodiment. As shown in FIG. 43, the apparatus main body 10l of the fourth embodiment is obtained by providing an insulating probe 600 on the piping 36 side of the nozzle 41 with respect to the apparatus main body 10g of the second embodiment. The insulating probe 600 is an example of a measurement unit. Also, the arrangement of the processing container 12d and the nozzle 41 is the same as that of the apparatus main body 10a of Modification 1. Note that in the fourth embodiment, the remote plasma source 30i includes at least an RF power supply 16, an antenna 18, a resonator array structure 300, and an insulating probe 600. The remote plasma source 30i may include a gas supply unit 38 as in the second embodiment.

[0105] The insulating probe 600 is disposed, for example, on the piping 36 side of the nozzle 41 and measures the electron density of the plasma generated by the resonator array structure 300. The distance 610 between the resonator array structure 300 and the insulating probe 600 in the piping 36 is the diffusion length of the plasma diffusion region where the plasma diffuses. The insulating probe 600 outputs the measured plasma density to the control device 11.

[0106] Here, with reference to FIG. 44, the region 620 including the resonator array structure 300 and the insulating probe 600 will be described. FIG. 44 is a diagram showing an example of the plasma diffusion region according to the fourth embodiment. As shown in FIG. 44, in the region 620, the processing gas flows from the inner space 36g side to the inner space 36f side of the pipe 36. Note that the flow rate of the processing gas also varies depending on the diameter 36i of the pipe 36. The diameter of the resonator array structure 300 is substantially equal to the diameter (inner diameter) 36i of the pipe 36. When the processing gas passes through the resonator array structure 300 to which the magnetic field H is supplied, plasma P is generated and diffuses in the inner space 36f. Note that in FIG. 44, the plasma P is schematically shown. The ions contained in the plasma P are recombined when passing through the through-hole 41a of the nozzle 41. The radicals contained in the plasma P are supplied to the processing space S together with the unactivated processing gas.

[0107] The insulating probe 600 is disposed, for example, on the inner space 36f side or the processing space S side of the nozzle 41, or inside the side wall of the pipe 36 near the nozzle 41, and measures the plasma density near the nozzle 41. Note that as the plasma density, for example, the electron density is measured.

[0108] When the electron density is input as a measurement result from the insulating probe 600, the control device 11 controls the remote plasma source 30i so as to adjust the supply amount of the plasma based on the input electron density. That is, the control device 11 controls the power of the source RF signal of the RF power supply 16 based on the electron density. The control device 11 also controls the flow rate of the processing gas (source gas) by controlling the flow rate controller 38c of the gas supply unit 38 based on the electron density. Thereby, the plasma processing apparatus 4 can control the amount of the generated high-density radicals.

[0109] Next, with reference to FIGS. 45 and 46, the change in the electron density at the distance 610, which is the diffusion length of the plasma diffusion region, will be described. FIGS. 45 and 46 are graphs showing an example of the distribution of the electron density in the plasma diffusion region. In FIGS. 45 and 46, the region 620 shown in FIG. 44 is rotated 90 degrees to the right, and the resonator array structure 300 is shown on the right side of the graph and the nozzle 41 is shown on the left side of the graph.

[0110] FIG. 45 shows an example of the distribution of the electron density according to the flow rate of the processing gas at the distance 610, and the region 601 represents the measurement position by the insulating probe 600. The graphs 631 to 633 show the distributions of the electron density when the flow rate of the processing gas is large (graph 631), medium (graph 632), and small (graph 633), respectively. Note that the flow rates in the graphs 631 to 633 are relative. From the graphs 631 to 633, it can be seen that the higher the flow rate of the processing gas, the higher the electron density at the insulating probe 600 near the nozzle 41. Note that the electron density decreases at locations where the electron temperature is high according to the Boltzmann relationship.

[0111] FIG. 46 shows an example of the distribution of the electron density according to the power of the source RF signal of the RF power supply 16 at the distance 610 (hereinafter, may be simply referred to as power in some cases). The region 601 represents the measurement position by the insulating probe 600. The graphs 634 to 636 show the distributions of the electron density when the power is large (graph 634), medium (graph 635), and small (graph 636), respectively. Note that the powers in the graphs 634 to 636 are relative. From the graphs 634 to 636, it can be seen that the higher the power, the higher the electron density in the region 637 on the resonator array structure 300 side. From FIGS. 45 and 46, it can be seen that the electron density at the insulating probe 600 near the nozzle 41 can be controlled by the flow rate of the processing gas and the power.

[0112] Next, with reference to FIGS. 47 to 51, the relationships among the flow rate of the processing gas, the electron density, the diameter 36i of the pipe 36, the power, the residence time, the transfer time, etc. will be described. FIG. 47 is a graph showing an example of the relationship between the gas flow rate and the electron density. The graph 640 shown in FIG. 47 shows the relationship between the gas flow rate, which is the flow rate of the processing gas, and the electron density. When the gas flow rate is low, diffusion is the dominant factor in the plasma diffusion region (internal space 36f). As shown in the graph 640, when the gas flow rate increases and approaches the vicinity of region 641, not only diffusion but also gas flow promotes plasma generation in the resonator array structure 300, and the electron density increases. However, when the gas flow rate further increases, plasma generation in the resonator array structure 300 becomes insufficient, and the electron density decreases. Therefore, the gas flow rate is preferably controlled to be near the vicinity of region 641.

[0113] FIG. 48 is a graph showing an example of the relationship between the power of the electromagnetic wave and the pipe diameter. In the graph of FIG. 48, the vertical axis represents the power [W / mm 3 applied to the unit volume of the resonator array structure 300 (metamaterial), and the horizontal axis represents the diameter 36i [mm] of the pipe 36 (hereinafter referred to as the pipe diameter). The graph 650 shows the case where the power of the source RF signal of the RF power supply 16 is 100 W. The graph 651 shows the case where the power is 1000 W. The graph 652 shows the case where the power is 3000 W.

[0114] Figure 49 is a graph showing an example of the relationship between the ratio of the power density of electromagnetic waves and the pipe diameter. In the graph 653 of Figure 49, the vertical axis represents the ratio of the power density [times], and the horizontal axis represents the pipe diameter [mm]. Note that the vertical axis of the graph 653 is expressed as a ratio with a pipe diameter of 300 [mm] being 1 times. When power is supplied to the resonator array structure 300, plasma is generated. As shown in graphs 650 to 653, the thinner the pipe diameter and the greater the input power, the greater the power per unit volume. That is, in the resonator array structure 300, the greater the power supplied to the resonator array structure 300, the more the ionization of the processing gas proceeds in the resonator array structure 300, and the higher the plasma density becomes. Also, in the resonator array structure 300, the power density increases when the pipe diameter is reduced. That is, in each embodiment, it is possible to generate a high-density plasma.

[0115] Figure 50 is a graph showing an example of the relationship between the time that gas stays in the space of the resonator array structure and the pipe diameter. In the graph of Figure 50, the vertical axis represents the time [s] that the processing gas stays in the space of the resonator array structure 300 (metamaterial), and the horizontal axis represents the pipe diameter [mm]. Here, the vertical axis corresponds to the time when power is applied to the processing gas. Graph 654 shows the case where the flow rate of the processing gas is 1000 sccm (1.67×10 -5 m 3 / s). Graph 655 shows the case where the flow rate of the processing gas is 5000 sccm. Graph 656 shows the case where the flow rate of the processing gas is 10000 sccm. Graph 657 shows the case where the flow rate of the processing gas is 100000 sccm. When the processing gas flows through the pipe 36, the processing gas in the space of the resonator array structure 300 is replaced. Therefore, as shown in graphs 654 to 657, the smaller the pipe diameter and the greater the flow rate of the processing gas, the shorter the time that the processing gas stays in the space of the resonator array structure 300. That is, the smaller the pipe diameter and the greater the flow rate of the processing gas, the faster the gas replacement in the space of the resonator array structure 300. That is, in the resonator array structure 300, since gas replacement is performed immediately after plasma is generated, high-density plasma is generated one after another.

[0116] FIG. 51 is a graph showing an example of the relationship between the travel time from plasma generation to the processing chamber and the pipe diameter. In the graph of FIG. 51, the vertical axis represents the time [s] for the generated plasma to travel from plasma generation in the resonator array structure 300 to the processing space S (processing chamber), and the horizontal axis represents the pipe diameter [mm]. Here, the vertical axis corresponds to the time for the plasma to travel a distance of 610. Graph 660 shows the case where the flow rate of the processing gas is 2000 sccm. Graph 661 shows the case where the flow rate of the processing gas is 5000 sccm. Graph 662 shows the case where the flow rate of the processing gas is 10000 sccm. Graph 663 shows the case where the flow rate of the processing gas is 20000 sccm. As shown in Graphs 660 to 663, the plasma generated in the resonator array structure 300 takes a shorter time to travel from plasma generation to the processing space S as the pipe diameter becomes smaller.

[0117] Thus, in the fourth embodiment, optimal control of the flow rate of the processing gas with respect to the power becomes possible. Also, as in the second to fourth embodiments and Modifications 5, 6, 8, and 9, since the size of the resonator array structure is substantially the same as that of the pipes 36 and 36c (for example, φ100 mm or less), the remote plasma source can be miniaturized. Also, since the resonator array structure can be miniaturized, the power density increases at low power, and high-density plasma exceeding the cutoff can be generated. Therefore, high-density radicals can be generated. Also, since the volumes of the internal spaces 36a and 36f, which are the plasma generation regions of the pipes 36 and 36c, are small, the arrival time of the plasma at the processing space S can be shortened. Therefore, the radicals to be recombined can be reduced, and high-density radicals can be supplied to the processing space S.

[0118] Also, the above-described embodiments and modifications can be appropriately combined within a range that does not conflict with the content. For example, the orifice 42 of Modification 4 may be used in place of the nozzle 41 of the second embodiment or the like.

[0119] According to the above embodiments, the plasma processing apparatuses 1 to 4 include a processing chamber (processing containers 12, 12d, 12e), a substrate holding unit (stage 14), and a plasma source (remote plasma sources 30, 30a to 30h). The processing chamber is configured to provide a processing space S for a substrate (workpiece WP). The substrate holding unit is configured to hold the substrate in the processing chamber. The plasma source is configured to supply plasma into the processing chamber, and includes a gas supply unit 38, pipes (pipes 36, 36c, 36e), an electromagnetic wave generator (RF power supply 16), an electromagnetic wave supply unit (antennas 18, 18a, electromagnetic wave radiation mechanism 18b), and resonator array structures (resonator array structures 100, 200, 300, 400, 500). The gas supply unit 38 is configured to supply a source gas. The pipes are configured to connect the gas supply unit 38 and the processing chamber. The electromagnetic wave generator is configured to generate electromagnetic waves for exciting plasma supplied into the pipes. The electromagnetic wave supply unit is configured to supply electromagnetic waves into the pipes through dielectric windows (dielectric windows 20, 20a to 20d) provided in the pipes. The resonator array structure is configured to be capable of resonating with the magnetic field component of the electromagnetic waves and have a size smaller than the wavelength of the electromagnetic waves, and includes a plurality of resonators (resonators 101, 201, 301, 401, 501) arranged in the same plane direction. As a result, high-density radicals can be generated while suppressing the influence of heat, electromagnetic waves, and ions.

[0120] Also, according to the embodiments, the plurality of resonators have a structure in which C-shaped ring members (ring members 111, 211, 311, 411, 511) made of a conductor are laminated on a dielectric (for example, dielectrics 112, 212, 312, 412). As a result, plasma can be excited.

[0121] Further, according to the first embodiment, each of the plurality of resonators 101 and 201 includes a set of two or more C-shaped ring members 111 and 211, and is formed in a direction parallel to a plane of the first surface (first surfaces 106 and 206) on the wider side of the area of the base (dielectrics 112 and 212) of the resonator array structures 100 and 200. As a result, the plurality of resonators 101 and 201 can resonate with respect to the magnetic field H in the direction penetrating the resonators 101 and 201 supplied from the electromagnetic wave supply unit.

[0122] Further, according to the second and third embodiments, each of the plurality of resonators 301, 401, and 501 is formed in a card shape for each set of two or more C-shaped ring members 311, 411, and 511. Also, the plurality of card-shaped resonators 301, 401, and 501 are formed in a direction parallel to a plane perpendicular to the first surface on the wider side of the area of the base (for example, base plates 320 and 510) of the resonator array structures 300, 400, and 500. As a result, the plurality of resonators 301, 401, and 501 can resonate with respect to the magnetic field H or the rotating magnetic field H1 in the direction penetrating the resonators 301, 401, and 501 supplied from the electromagnetic wave supply unit.

[0123] Further, according to the second and third embodiments, each of the plurality of resonators 301, 401, and 501 includes a set of two or more C-shaped ring members 311, 411, and 511, and is formed in a strip shape (for example, strip resonator 520) in which a plurality of sets are connected. The plurality of strip-shaped resonators are formed in a direction parallel to a plane perpendicular to the first surface on the wider side of the area of the base (for example, base plates 320 and 510) of the resonator array structures 300, 400, and 500. As a result, the plurality of resonators 301, 401, and 501 can resonate with respect to the magnetic field H or the rotating magnetic field H1 in the direction penetrating the resonators 301, 401, and 501 supplied from the electromagnetic wave supply unit.

[0124] Further, according to the third embodiment, on the first surface side of the resonator array structure 500, the plate-like dielectrics of the resonators 501 are arranged radially with respect to the central axis of the electromagnetic wave supply unit. As a result, the plurality of resonators 501 can resonate with respect to the rotating magnetic field H1 in the direction passing through the resonators 501 supplied from the electromagnetic wave supply unit.

[0125] Further, according to the first embodiment and Modifications 1 to 4 and 7, the resonator array structures 100 and 400 are arranged in a direction in which the first surface is parallel to the longitudinal direction of the pipe 36. As a result, the electromagnetic wave supply unit can be arranged in a direction along the side wall of the pipe 36.

[0126] Further, according to the second and third embodiments and Modifications 5, 6, and 8, the resonator array structures 200, 300, and 500 are arranged in a direction in which the first surface is parallel to the cross-sectional direction of the pipes 36 and 36c. As a result, plasma can be generated over the entire cross-section of the pipes 36 and 36c.

[0127] Further, according to the first to third embodiments and Modifications 1 to 3 and 7, the pipes 36 and 36c are provided with nozzles 41 at the connection portions with the processing chamber. As a result, high-density radicals can be supplied to the processing chamber while suppressing the influence of heat, electromagnetic waves, and ions.

[0128] Further, according to Modification 7, the resonator array structure 400 is arranged at the center of the cross-section of the pipe 36. The plurality of resonators 401 are provided with through-holes 415 in the plate-like dielectrics of the resonators 401. As a result, the processing gas passing through the through-holes 415 can be plasma-excited.

[0129] Further, according to the second and third embodiments and Modifications 5, 6, and 8, the resonator array structures 200, 300, and 500 are provided with through-holes 208, 325, and 525 that open on the first surface. As a result, the processing gas can flow from the gas supply unit 38 to the processing space S.

[0130] Also, according to the fourth embodiment, the plasma source further includes a measurement unit (insulating probe 600) configured to measure the density of plasma on the processing chamber side of the resonator array structure 300 in the pipe 36. The plasma processing apparatus 4 further has a control unit (control device 11) configured to control the plasma source to adjust the supply amount of plasma based on the measurement result at the measurement unit. As a result, optimal control of the flow rate of the processing gas with respect to the power can be performed.

[0131] Also, according to the fourth embodiment, the control unit is configured to control the output of the electromagnetic wave of the electromagnetic wave generator based on the measurement result. As a result, the plasma density can be controlled by the power of the source RF signal.

[0132] Also, according to the fourth embodiment, the control unit is configured to control the flow rate of the source gas (processing gas) of the gas supply unit 38 based on the measurement result. As a result, the plasma density can be controlled by the flow rate of the processing gas.

[0133] Each of the embodiments disclosed this time should be considered as illustrative in all respects and not restrictive. Each of the above embodiments may be omitted, replaced, or changed in various forms without departing from the scope and gist of the appended claims.

[0134] Also, in each of the above embodiments, the antenna 18 which is a solenoid-shaped coil or the electromagnetic wave radiation mechanism 18b having a coaxial tube and an antenna portion is used as the antenna for inputting electromagnetic waves, but it is not limited thereto. That is, it is not limited thereto as long as a magnetic field can be generated in the direction penetrating the ring members 111 such as the plurality of resonators 101 such as the resonator array structure 100. Such an antenna for inputting electromagnetic waves is not limited to the antenna 18 or the electromagnetic wave radiation mechanism 18b, and for example, any antenna or mechanism for inputting electromagnetic waves such as a monopole antenna, a slot antenna, an inductively coupled coil, a capacitively coupled electrode, a magnetron, etc. can be used.

[0135] In addition, in each of the above embodiments, plasma is generated by an independent remote plasma source 30 or the like, but the present invention is not limited thereto. For example, the remote plasma source 30 or the like may be combined with a capacitively coupled or inductively coupled plasma processing apparatus that directly generates plasma in the processing space S of the processing chamber 12.

[0136] Note that the present disclosure can also adopt the following configurations. (1) A processing chamber configured to provide a processing space for a substrate, A substrate holding unit configured to hold the substrate in the processing chamber, A plasma source configured to supply plasma into the processing chamber, The plasma source includes A gas supply unit configured to supply a source gas, A pipe configured to connect the gas supply unit and the processing chamber, An electromagnetic wave generator configured to generate electromagnetic waves for plasma excitation supplied into the pipe, An electromagnetic wave supply unit configured to supply the electromagnetic waves into the pipe through a dielectric window provided in the pipe, A resonator array structure including a plurality of resonators that can resonate with the magnetic field component of the electromagnetic waves, have a size smaller than the wavelength of the electromagnetic waves, and are arranged in the direction of the same plane, A plasma processing apparatus. (2) The plurality of resonators have a structure in which a C-shaped ring member made of a conductor is laminated on a dielectric. The plasma processing apparatus according to (1) above. (3) Each of the plurality of resonators includes a set of two or more of the C-shaped ring members, and is formed in the direction of the plane parallel to the first surface on the wider side of the area of the base of the resonator array structure. The plasma processing apparatus according to (2) above. (4) Each of the plurality of resonators is formed in a card shape for each set of two or more of the C-shaped ring members. The plurality of resonators in the card shape are formed in a direction of the plane perpendicular to the first surface on the wider side of the base area of the resonator array structure. The plasma processing apparatus according to (2) above. (5) Each of the plurality of resonators includes a set of two or more of the C-shaped ring members, and is formed in a strip shape connecting the plurality of sets. The plurality of resonators in the strip shape are formed in a direction of the plane perpendicular to the first surface on the wider side of the base area of the resonator array structure. The plasma processing apparatus according to (2) above. (6) On the first surface side of the resonator array structure, the plate-shaped dielectrics of the respective resonators are arranged radially starting from the central axis of the electromagnetic wave supply unit. The plasma processing apparatus according to (4) or (5) above. (7) The resonator array structure is arranged in a direction in which the first surface is parallel to the longitudinal direction of the pipe. The plasma processing apparatus according to any one of (3) to (5) above. (8) The resonator array structure is arranged in a direction in which the first surface is parallel to the cross-sectional direction of the pipe. The plasma processing apparatus according to any one of (3) to (6) above. (9) The pipe includes a nozzle at a connection portion with the processing chamber. The plasma processing apparatus according to (7) above. (10) The resonator array structure is arranged at the central portion of the cross-section of the pipe. Each of the plurality of resonators includes a through hole in the plate-shaped dielectric thereof. The plasma processing apparatus according to (7) above. (11) The resonator array structure includes a through hole that opens to the first surface. The plasma processing apparatus according to (8) or (9) above. (12) The plasma source In the pipe, a measurement unit configured to measure the density of the plasma is further provided on the processing chamber side of the resonator array structure. The plasma processing apparatus The plasma processing apparatus further includes a control unit configured to control the plasma source to adjust the supply amount of the plasma based on the measurement result of the measurement unit. The plasma processing apparatus according to any one of (1) to (11) above. (13) The control unit is configured to control the output of the electromagnetic wave of the electromagnetic wave generator based on the measurement result. The plasma processing apparatus according to (12) above. (14) The control unit is configured to control the flow rate of the source gas of the gas supply unit based on the measurement result. The plasma processing apparatus according to (12) or (13) above. (15) A gas supply unit configured to supply a source gas, A pipe configured to connect the gas supply unit and a processing chamber configured to provide a processing space for a substrate, An electromagnetic wave generator configured to generate an electromagnetic wave for exciting plasma supplied into the pipe, An electromagnetic wave supply unit configured to supply the electromagnetic wave into the pipe through a dielectric window provided in the pipe, A resonator array structure including a plurality of resonators that can resonate with a magnetic field component of the electromagnetic wave and have a size smaller than the wavelength of the electromagnetic wave and are arranged in the same plane direction. Plasma source. (16) In the pipe, a measurement unit configured to measure the density of the plasma is provided on the processing chamber side of the resonator array structure. A control unit configured to control one or more of the electromagnetic wave supply unit and the gas supply unit to adjust the supply amount of the plasma based on the measurement result in the measurement unit. The plasma source according to (15) above. (17) The control unit is configured to control one or more of the output of the electromagnetic wave of the electromagnetic wave generator and the flow rate of the source gas of the gas supply unit based on the measurement result. The plasma source according to (16) above. (18) A plasma control method in a plasma processing apparatus, wherein the plasma processing apparatus includes a processing chamber configured to provide a processing space for a substrate, a substrate holding unit configured to hold the substrate in the processing chamber, and a plasma source configured to supply plasma into the processing chamber. The plasma source includes a gas supply unit configured to supply a source gas, a pipe configured to connect the gas supply unit and the processing chamber, an electromagnetic wave generator configured to generate electromagnetic waves for exciting plasma supplied into the pipe, an electromagnetic wave supply unit configured to supply the electromagnetic waves into the pipe through a dielectric window provided in the pipe, a resonator array structure including a plurality of resonators that can resonate with a magnetic field component of the electromagnetic waves, have a size smaller than the wavelength of the electromagnetic waves, and are arranged in a direction in the same plane, and a measurement unit configured to measure the density of the plasma on the processing chamber side of the resonator array structure in the pipe. The plasma processing apparatus includes a step of controlling the plasma source to adjust the supply amount of the plasma based on the measurement result in the measurement unit. Plasma control method. (19) The step of controlling the plasma source controls the output of the electromagnetic wave of the electromagnetic wave generator based on the measurement result. The plasma control method according to (18) above. (20) The step of controlling the plasma source controls the flow rate of the source gas of the gas supply unit based on the measurement result. The plasma control method according to (18) or (19) above.

Explanation of Signs

[0137] 1 to 4 Plasma processing apparatuses 11 Control device 12, 12d, 12e Processing containers 14 Stage 16 RF power source 18, 18a Antennas 18b Electromagnetic wave radiation mechanism 20, 20a to 20d Dielectric windows 30, 30a to 30i Remote plasma sources 36, 36c, 36e Pipes 38 Gas supply unit 41 Nozzle 100, 200, 300, 400, 500 Resonator array structures 101, 201, 301, 401, 501 Resonators 106, 206 First surfaces 111, 211, 311, 411, 511 Ring members 112, 212, 312, 412 Dielectrics 208, 325, 415, 525 Through holes 320, 510 Base plates 520 Strip-shaped resonators 600 Insulating probes S Processing space WP Workpiece

Claims

1. A processing chamber configured to provide a processing space for a substrate, a substrate holding unit configured to hold the substrate in the processing chamber, and a plasma source configured to supply plasma into the processing chamber, wherein the plasma source includes a gas supply unit configured to supply a source gas, a pipe configured to connect the gas supply unit and the processing chamber, an electromagnetic wave generator configured to generate electromagnetic waves for exciting plasma supplied in the pipe, an electromagnetic wave supply unit configured to supply the electromagnetic waves into the pipe through a dielectric window provided in the pipe, and a resonator array structure including a plurality of resonators that are capable of resonating with a magnetic field component of the electromagnetic waves, have a size smaller than a wavelength of the electromagnetic waves, and are arranged in a direction of the same plane. A plasma processing apparatus.

2. The plurality of resonators each have a structure in which a C-shaped ring member made of a conductor is laminated on a dielectric. The plasma processing apparatus according to claim 1.

3. Each of the plurality of resonators includes a set of two or more of the C-shaped ring members, and is formed in a direction of the plane parallel to a first surface on a wider side of a base of the resonator array structure. The plasma processing apparatus according to claim 2.

4. Each of the plurality of resonators is formed in a card shape for each set of two or more of the C-shaped ring members. The plurality of resonators in the card shape are formed in a direction of the plane perpendicular to a first surface on a wider side of a base of the resonator array structure. The plasma processing apparatus according to claim 2.

5. Each of the plurality of resonators includes a set of two or more of the C-shaped ring members, and is formed in a strip shape in which a plurality of the sets are connected. The plurality of resonators in the strip shape are formed in a direction of the plane perpendicular to a first surface on a wider side of a base of the resonator array structure. The plasma processing apparatus according to claim 2.

6. On the first surface side of the resonator array structure, plate-like dielectrics of the respective resonators are arranged to be radial starting from a central axis of the electromagnetic wave supply unit. The plasma processing apparatus according to claim 4 or 5.

7. The resonator array structure is arranged in a direction in which the first surface is parallel to a longitudinal direction of the pipe. The plasma processing apparatus according to any one of claims 3 to 5.

8. The resonator array structure is arranged in a direction in which the first surface is parallel to the cross-sectional direction of the pipe. The plasma processing apparatus according to any one of claims 3 to 5.

9. The pipe includes a nozzle at a connection portion with the processing chamber. The plasma processing apparatus according to claim 7.

10. The resonator array structure is arranged at the center of the cross-section of the pipe. Each of the plurality of resonators includes a through hole in the plate-shaped dielectric thereof. The plasma processing apparatus according to claim 7.

11. The resonator array structure includes a through hole that opens to the first surface. The plasma processing apparatus according to claim 8.

12. The plasma source is In the pipe, further includes a measurement unit configured to measure the density of the plasma on the processing chamber side of the resonator array structure. The plasma processing apparatus is Further includes a control unit configured to control the plasma source to adjust the supply amount of the plasma based on the measurement result of the measurement unit. The plasma processing apparatus according to claim 1.

13. The control unit is configured to control the output of the electromagnetic wave of the electromagnetic wave generator based on the measurement result. The plasma processing apparatus according to claim 12.

14. The control unit is configured to control the flow rate of the source gas of the gas supply unit based on the measurement result. The plasma processing apparatus according to claim 12 or 13.

15. A gas supply unit configured to supply a source gas, A pipe configured to connect the gas supply unit and a processing chamber configured to provide a processing space for a substrate, An electromagnetic wave generator configured to generate an electromagnetic wave for exciting plasma supplied into the pipe, An electromagnetic wave supply unit configured to supply the electromagnetic wave into the pipe through a dielectric window provided in the pipe, A resonator array structure including a plurality of resonators that can resonate with a magnetic field component of the electromagnetic wave and have a size smaller than the wavelength of the electromagnetic wave and are arranged in the same plane direction. Plasma source.

16. In the pipe, a measurement unit configured to measure the density of the plasma on the processing chamber side of the resonator array structure, Based on the measurement result of the measurement unit, further includes a control unit configured to control one or more of the electromagnetic wave supply unit and the gas supply unit to adjust the supply amount of the plasma. The plasma source according to claim 15.

17. The control unit is configured to control one or more of the output of the electromagnetic wave of the electromagnetic wave generator and the flow rate of the source gas of the gas supply unit based on the measurement result. The plasma source according to claim 16.

18. A plasma control method in a plasma processing apparatus, wherein the plasma processing apparatus includes a processing chamber configured to provide a processing space for a substrate, a substrate holding unit configured to hold the substrate in the processing chamber, and a plasma source configured to supply plasma into the processing chamber. The plasma source includes a gas supply unit configured to supply a source gas, a pipe configured to connect the gas supply unit and the processing chamber, an electromagnetic wave generator configured to generate electromagnetic waves for exciting plasma supplied into the pipe, an electromagnetic wave supply unit configured to supply the electromagnetic waves into the pipe through a dielectric window provided in the pipe, and a resonator array structure including a plurality of resonators that are capable of resonating with a magnetic field component of the electromagnetic waves, have a size smaller than the wavelength of the electromagnetic waves, and are arranged in a direction in the same plane. In the pipe, a measurement unit for measuring the density of the plasma is provided on the processing chamber side of the resonator array structure. The plasma processing apparatus includes a step of controlling the plasma source to adjust the supply amount of the plasma based on the measurement result obtained by the measurement unit. A plasma control method.

19. The step of controlling the plasma source is to control the output of the electromagnetic wave of the electromagnetic wave generator based on the measurement result. The plasma control method according to claim 18.

20. The step of controlling the plasma source is to control the flow rate of the source gas of the gas supply unit based on the measurement result. The plasma control method according to claim 18 or 19.

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