High power multilayer module for paralleling power device with low inductance and fast switching

Abstract

To provide a high power multilayer modules for paralleling a power device with low inductance and fast switching.SOLUTION: A power module includes at least one substrate, a housing disposed on the at least one power substrate, a first terminal electrically connected to the at least one power substrate, a second terminal including a contact surface, a third terminal electrically connected to the at least one power substrate, and a plurality of power devices disposed on the at least one power substrate and connected to the at least one power substrate, and the third terminal is electrically connected to at least one power device of the plurality of power devices.SELECTED DRAWING: Figure 10

Description

Technical Field

[0001] Cross - reference to related applications This application claims the benefit of U.S. Patent Application No. 16 / 658,630, filed on October 21, 2019, which is hereby incorporated by reference in its entirety for all purposes as if fully set forth herein. This application further claims the benefit of U.S. Patent Application No. 16 / 266,771, filed on February 4, 2019, which is hereby incorporated by reference in its entirety for all purposes as if fully set forth herein. This application further claims the benefit of U.S. Provisional Patent Application No. 62 / 790,965, filed on January 10, 2019, which is hereby incorporated by reference in its entirety for all purposes as if fully set forth herein. This application further claims the benefit of U.S. Provisional Patent Application No. 62 / 914,847, filed on October 14, 2019, which is hereby incorporated by reference in its entirety for all purposes as if fully set forth herein.

[0002] 1. Field of Disclosure The present disclosure is directed to high - power multilayer modules having low inductance and high - speed switching, and more particularly to high - power multilayer modules for paralleling power devices. Further, the present disclosure is directed to a method of constructing a high - power multilayer module having low inductance and high - speed switching for paralleling power devices.

Background Art

[0003] 2. Related Art As will be understood by those skilled in the art, power modules are known in various forms. A power module provides physical containment of power components, typically power semiconductor devices. These power semiconductors are usually soldered or sintered onto a power electronic substrate. A power module typically carries the power semiconductors, provides electrical and thermal contact, and includes electrical insulation.

[0004] The current trend towards electrification is driving an increasing demand for power modules that include power semiconductor devices, power electronic components, and / or other like items related to power modules. For example, improved efficiency and higher power density. These requirements extend from the system level to the component level. However, operating the power module to meet these requirements increases the generation of heat within the power module. Due to the physical limitations of power semiconductor devices, power electronic components, and / or other like items, this increased heat generation limits the operating ability of the power module. Specifically, the various components of a power module that include power semiconductor devices, power electronic components, and / or other like items typically have operating temperature limits.

[0005] Furthermore, the parasitic impedance of the power module also limits practical implementations of these devices of the prior art. Specifically, the loop inductance during a switching event can result in voltage overshoot and ringing. This loop inductance reduces stability, increases switching losses, generates electromagnetic interference (EMI), and stresses system components. Ultimately, these factors can limit the maximum switching frequency, which is desirable for reducing the size of external filters within a power conversion system.

[0006] Therefore, there is a need for a power module configured to address additional heat generation.

[0007] Furthermore, there is a need for a power module configured to address parasitic impedances, such as loop inductance, to increase stability, reduce switching losses, reduce EMI, and / or limit stress on system components. SUMMARY OF THE INVENTION

[0008] One general aspect includes a power module including at least one conductive power substrate, a housing disposed on the at least one conductive power substrate, a first terminal electrically connected to the at least one conductive power substrate and including a contact surface located on the housing, a second terminal including a contact surface located on the housing, a third terminal electrically connected to the at least one conductive power substrate, a plurality of power devices disposed on the at least one conductive power substrate and connected to the at least one conductive power substrate, with the third terminal electrically connected to at least one of the plurality of power devices, a base plate, and a plurality of pin fins disposed on the base plate, the plurality of pin fins being configured to provide direct cooling to the power module.

[0009] One general aspect includes a power module, the power module including a base plate, at least one power substrate, a housing disposed on the at least one power substrate, a first terminal electrically connected to the at least one power substrate, a second terminal, a third terminal electrically connected to the at least one power substrate, a plurality of power devices electrically connected to the at least one power substrate, a gate-source board electrically connected to the plurality of power devices, and a plurality of pin fins disposed on the base plate, the plurality of pin fins being configured to provide direct cooling to the power module.

[0010] One general aspect includes a method of constructing a power module, the method including providing at least one power substrate, disposing a housing on the at least one power substrate, connecting a first terminal to the at least one power substrate, providing a second terminal, electrically connecting a third terminal to the at least one power substrate, connecting a plurality of power devices to the at least one power substrate, and attaching a gate-source board electrically connected to the plurality of power devices, the gate-source board being configured to receive at least one electrical signal, the method further including providing a plurality of pin fins disposed on the base plate and configuring the plurality of pin fins to cool at least one component of the power module.

[0011] Additional features, advantages, and aspects of the present disclosure may be set forth in the following detailed description, the drawings, and the claims, or may become apparent from examination of the following detailed description, the drawings, and the claims. Further, it is to be understood that both the foregoing summary of the present disclosure and the following detailed description are exemplary and intended to provide further explanation without limiting the scope of the present disclosure as set forth in the claims.

[0012] The accompanying drawings, which are included to provide a further understanding of the disclosure, are incorporated in and constitute a part of this specification, illustrate aspects of the disclosure, and together with the detailed description serve to explain the principles of the disclosure. The structural details of the disclosure are not shown in more detail than may be necessary for a fundamental understanding of the disclosure and of the various ways in which it may be implemented.

Brief Description of the Drawings

[0013]

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[0014] Aspects of the present disclosure, as well as various features and advantageous details thereof, are described in more detail with reference to the non-limiting aspects and examples described and / or illustrated in the accompanying drawings and detailed in the following description. Even if not explicitly stated in this specification, it should be noted that the features shown in the drawings are not necessarily drawn at a certain magnification, and the features of one aspect can be used together with other aspects that would be recognized by those skilled in the art. The description of well-known components and processing techniques may be omitted so as not to unnecessarily obscure the aspects of the present disclosure. The intention of the examples used in this specification is merely to facilitate the understanding of the manner of implementing the present disclosure and to further enable those skilled in the art to implement the aspects of the present disclosure. Therefore, the examples and aspects in this specification should not be construed as limiting the scope of the present disclosure. The scope of the present disclosure is defined only by the appended claims and applicable law. Further, it should be noted that throughout several of the figures of the drawings, the same reference numerals represent similar parts.

[0015] The present disclosure describes a power module, which has a structure optimized for state-of-the-art wide-bandgap power semiconductor devices such as gallium nitride (GaN), silicon carbide (SiC), and others of the same kind, and can include a structure capable of carrying large amounts of current and voltage and switching at an increasingly faster rate compared to established technologies. Conventional power electronic packages having an internal layout intended for use with silicon (Si) device technology have limited functionality for these semiconductors.

[0016] The disclosed power module can be configured to evenly distribute current among large arrays of paralleled devices and have a loop inductance that is significantly lower than standard packaging techniques. A multi-level current path with a terraced power terminal simplifies the external connection to the bushing system and reduces the inductance between the power module and the filtering capacitor. The layout of this power module is highly configurable and can be configured to adopt most of the common power circuit topologies in the power electronics industry.

[0017] The disclosed power module significantly improves internal module performance, system-level implementation, manufacturability, and ease of use through the addition of denser power loops and logical external terminal placement.

[0018] In this regard, the disclosed power module can be configured to provide at least one or more of the following. Highly optimized low-inductance power module structure Modular, scalable, flexible layout and power flow Equalized paralleling of a number of power semiconductors to form high-current switch positions Optimized gate and sense signal structure for paralleling a number of power semiconductors Sense connector for temperature sensing and overcurrent protection Form factor suitable for high-voltage operation at voltages up to or above about 1700V (volts) Scalable height for operation beyond 1700V Multi-layer internal conductor layout for optimized external system interconnection Modular internal structure designed to accommodate various state-of-the-art materials, mounting, isolation, and interconnection techniques Sufficiently optimized for high-performance system-level integration Easy to parallelize and easy to directly scale to higher currents Can be configured in a wide variety of power topologies including half - bridge, full - bridge, three - phase, boost, chopper and other similar arrangements Scalable system embodiments for meeting various power processing needs

[0019] Essentially, the disclosed power module configuration enables the full utilization of the capabilities of advanced power semiconductors and can significantly improve power density, switching, efficiency and other similar aspects.

[0020] The structures and purposes of the power devices in a power module are diverse. The term "power device" refers to various forms of transistors and diodes designed for high voltage and high current. Those transistors can be controllable switches that allow (depending on the type of device) unidirectional or bidirectional current flow, while those diodes can allow unidirectional current flow and may not be controllable. The types of transistors can include, but are not limited to, metal - oxide semiconductor field - effect transistors (MOSFETs), junction field - effect transistors (JFETs), bipolar junction transistors (BJTs), insulated - gate bipolar transistors (IGBTs), and other similar transistors.

[0021] Power devices can include wide - bandgap (WBG) semiconductors such as gallium nitride (GaN), silicon carbide (SiC) and other similar semiconductors, which can offer numerous advantages not present in conventional silicon (Si) as a material for power devices. Nevertheless, various aspects of the present disclosure can utilize Si - type power devices and achieve some of the advantages described herein. Key metrics of WBG semiconductors can include one or more of the following non - limiting aspects. Higher voltage blocking Higher current density Operation at higher temperatures Faster switching Improved thermal performance Lower on-resistance (reduced conduction loss)

[0022] Lower turn-on and turn-off energy (reduced switching losses). In some aspects of the present disclosure, it should be understood that these key metrics of the WBG semiconductor may not be required and may not be implemented.

[0023] To effectively utilize WBG semiconductor devices, power modules (also referred to as power packages) are used. Power modules can perform several functions, including one or more of the following non-limiting aspects. Provide electrical interconnection of power semiconductor devices within a useful topology. Protect vulnerable devices from moisture, vibration, contamination, and others of the same kind. Create effective and efficient means to remove waste heat generated from the device as a result of conduction and switching losses. Facilitate system-level implementations with robust power and signal electrical connections to the internal layout. These power and signal electrical connections can be in the form of bolt-on, crimp-on, solder, plug and receptacle, and other implementations of the same kind. Provide voltage safety, including internal dielectric encapsulation and external voltage creepage distance and clearance distance based on industry-adopted standards.

[0024] In some aspects of the present disclosure, it should be understood that these functions may not be required and may not be implemented.

[0025] Figure 1A schematically shows a half-bridge based topology of a power module according to an aspect of the present disclosure. The half-bridge based topology is a basic building block of many switching power converters. For motor drives, inverters, and DC-DC converters, these topologies are typically connected to a DC power source 112, and there is a bank of DC link capacitors 102 as an intermediate connection between the topology and the DC power source 112. This is schematically shown in Figure 1A. The DC link capacitor 102 can function to filter out ripples on the line and cancel the influence of the inductance of the current path. Two parallel half-bridges may form a full bridge, and three parallel half-bridges may form a three-phase topology. The three-phase topology is often also called a six pack, which means six switch positions among three phase legs. Further, other topologies are contemplated for power modules including common source, common drain, and neutral point clamp.

[0026] Figure 1A further shows a power module 100 having one or more switch positions 104. The power module 100 can include a first terminal 106, a second terminal 108, and a third terminal 110.

[0027] Figure 1B shows the current loop between the DC link capacitor and the inner switch positions of the power module of Figure 1A. The current loop 114 between the DC link capacitor 102 and the inner switch positions 104 of the power module 100 is critically important in this system and has a significant impact on the switching performance of the semiconductor.

[0028] There is no perfect system. For example, in any electrical system, there are unwanted parasitic resistances, capacitances, and inductances. These impedances introduce harmful effects on performance and reliability unless they are reduced or mitigated. Resistance and capacitance may be associated with each interconnection, but in most cases, the most significant impact on a switching power device is the parasitic inductance. The greater the inductance, the greater the energy stored in the magnetic field, which causes voltage overshoots and ringing during switching transitions.

[0029] FIG. 2 shows various interconnections and associated impedances according to aspects of the present disclosure. For a power conversion system such as the half-bridge configuration of the power module 100 presented in FIG. 1A, there are impedances 204 within each component, including the DC link capacitor 102, the biasing system 202, the power module 100, and other like components, as well as within the physical interconnections between them. This is shown in FIG. 2 with respect to inductance. There are often more functional elements and associated impedances within a power converter, but this loop may be the most critical with respect to switching performance.

[0030] In most power converters, these inductances must be carefully considered in the system design. This often requires adding more DC link capacitors 102 or slowing down the switching speed to cancel out the parasitic effects. These are effective, but they result in a bulkier system (larger and heavier with more capacitors) with greater losses (due to slower switching events where both high current and high voltage are present).

[0031] In a power package intended for Si devices, the turn-on and turn-off times characteristic of Si IGBTs are inherently slow enough for the inductance encountered within the internal power loop to be sufficiently small. However, with respect to the very fast switching of wide bandgap devices such as SiC MOSFETs, the inductance of conventional packages can result in voltage overshoots of several hundred volts.

[0032] To reach high current levels within the power module 100, many SiC devices need to be paralleled together, which further amplifies these problems. The parallel arrays of various combinations of power switches and diodes (all switches, all diodes, interleaved diodes, edge diodes, etc.) are referred to as "positions" or "switch positions". Each switch in the switch position 104 together acts as an effective single switch, and this effective single switch increases the amount of current that the circuit can handle or reduces the total losses by reducing the effective resistance.

[0033] Figure 3 shows various interconnections and associated impedances of switch positions according to aspects of the present disclosure. At switch position 104, each switch or power device 302 has its own individual current path within the structure. As shown in Figure 3, each interconnection has an associated impedance 204. As further shown in Figure 3, switch position 104 can include any number of power devices 302, as indicated by the symbol shown at arrow 304. Care must be taken so that each power device 302 encounters a matched inductance in order to ensure that the effective current paths are equalized among the power devices 302. Otherwise, the currents and voltages encountered during a switching transition will not be equally distributed among the power devices 302 across switch position 104, which can stress the components unevenly and increase switching losses. These issues are exacerbated by the effects of heat. Uneven current loading and switching events create non-uniform heat rises, resulting in semiconductor characteristics drifting across the paralleled switch positions 104 and increased instability.

[0034] Conventional power packages are typically designed for a single Si IGBT or for a small array of these devices (usually four or less). Thus, conventional power packages are not suitable for paralleling a large number of SiC MOSFETs and diodes (or like wide bandgap devices) to result in well-controlled clean switching.

[0035] The disclosed power module 100 provides a solution for power devices 302 such as wide bandgap devices. This solution can include one or more of the following non-limiting aspects. Reduce the internal inductance of the power module 100. Facilitate an equalized current path among paralleled power devices 302 of one switch position 104. Equalize heat between power devices 302 across one switch position 104. Have an external structure that enables a low inductance interconnection with the DC link capacitor 102. Can safely carry high current (hundreds of amperes) at high voltage (≥ 1700V).

[0036] In some aspects of the present disclosure, it should be understood that these above characteristics of the power module 100 are not required and that these above characteristics of the power module 100 may not be implemented.

[0037] FIG. 4A shows a schematic perspective view of a power module according to one aspect of the present disclosure, and FIG. 4B shows a schematic top view of a power module according to one aspect of the present disclosure. Specifically, FIGS. 4A and 4B show a half-bridge configuration of the power module 100. The disclosed power module 100 addresses each of the previously enumerated concerns by a specially designed power layout and related structure that facilitates a common majority of bridge topologies with equalized low inductance current paths for each switch position 104. By a simple laminated busbar, described in more detail later, that requires no bends or special design features, the current path to the external filtering DC link capacitor 102 can also have a correspondingly low inductance by arranging the terminals 106, 108, 110.

[0038] FIG. 4A shows the power terminal pin arrangement of a single half-bridge configuration of the power module 100. To physically minimize the external current loop to the DC link capacitor 102, the V+ terminal 106 and the V− terminal 108 can be intentionally placed close to each other (with sufficient space for voltage spatial separation).

[0039] The power module 100 can include signal terminals 502, 504, 506, 508. The specific pin arrangement of the signal terminals 502, 504, 506, 508 can be modular and can be changed as needed. This configuration is shown in FIG. 4A. As shown, there are four pairs of signal pins for the signal terminals 502, 504, 506, 508 for differential signal transmission. Of course, any number of signal pins and any number of signal terminals can be implemented to provide the functions described in connection with this disclosure. Each switch position 104 can utilize a pair of pins, and the terminals 502, 504 for the gate signal and source kelvin can be utilized for optimal control. The terminal pairs of the remaining signal terminals 506, 508 can be used for an internal temperature sensor, overcurrent sensing, or other diagnostic signals. As long as those pins and / or signal terminals do not lead to voltage isolation problems, it is also contemplated to add more pins and / or more signal terminals in any column as needed. In some aspects, these other diagnostic signals can be generated from a diagnostic sensor, which can include strain gauges and other similar ones that sense vibration. The diagnostic sensor can further determine humidity. Additionally, the diagnostic sensor can sense any environmental or device characteristic.

[0040] FIG. 5 shows a plurality of single-phase modules in a parallel configuration according to an aspect of the present disclosure. The modularity forms the basis of the disclosed power module 100. To reach higher currents, the power modules 100 in a single-phase configuration can be easily paralleled. As shown in FIG. 5, there are three power modules 100 shown, but there is no limit to the number of power modules that can be configured in this way. In this regard, the arrow 510 indicates that additional power modules 100 can be arranged in parallel. When paralleling, the corresponding terminals 106, 108, 110 can be electrically connected between each power module 100.

[0041] FIG. 6A shows a first power module configuration according to an aspect of the present disclosure, and FIG. 6B shows a second power module configuration according to an aspect of the present disclosure. It may be another distinct feature that the disclosed power module 100 is scalable. This is shown in FIGS. 6A and 6B. As shown in FIG. 6B, in order to accommodate more paralleled devices at each switch position 104 compared to the power module 100 shown in FIG. 6A, the width of the power module 100 can be increased. Since the current of the power module 100 increases, additional fastening holes 512 can be added to the power contacts of the terminals 106, 108, 110. It is important to note that the power module 100 can be paralleled as shown in FIG. 5, or the power module 100 can be scaled as shown in FIG. 6B, in order to match most power levels without sacrificing the advantages of the present disclosure, including for example low inductance, clean switching, high power density and other similar things.

[0042] FIG. 7 shows a power module in a full-bridge configuration according to an aspect of the present disclosure, FIG. 8 shows a power module in a three-phase configuration according to an aspect of the present disclosure, and FIG. 9 shows a single power module having a full-bridge configuration according to an aspect of the present disclosure. In some aspects, modularity can also be found in the formation of various electrical topologies, such as FIG. 7 regarding the full-bridge configuration of two power modules 100 and FIG. 8 regarding the three-phase configuration of three power modules 100. For these topologies, the V+ terminal 106 and the V− terminal 108 can be interconnected, while the phase output terminal 110 can remain separated. The configurations of FIGS. 7 and 8 can also be placed in a single housing, or the configurations of FIGS. 7 and 8 can be configured to have the shared base plate shown in FIG. 9. By doing so, the power density can be increased in exchange for the unit becoming more complex and the cost increasing.

[0043] The various arrangements, configurations, and scaled versions of the width of the power module 100 cover a range of applications and power levels, but the core internal components and layout can remain exactly the same. This enhances the modularity of the disclosed power module 100. This structure encompasses a group of modules targeted at specific customer systems that exhibit high performance levels while being easy to use and expand.

[0044] FIG. 10 shows an exploded view of a power module according to an aspect of the present disclosure, and FIG. 11 shows a partial view of the power module of FIG. 10. Specifically, FIG. 10 shows some of the elements within the power module 100. These elements include one or more of a base plate 602, a gasket 604, one or more power substrates 606, one or more edge power contacts 608, one or more switch positions 104, one or more temperature sensors 610, a housing sidewall 612, a central power contact 614, a signal interconnect assembly 616, a housing lid, fasteners 620, captive fasteners 622, and other like items. In one aspect, the base plate 602 can include metal. In one aspect, this metal can include copper. Further, it is contemplated that the power module 100 can include fewer elements than those described herein or elements different from those described herein.

[0045] The power module 100 can include a base plate 602. The base plate 602 can provide structural support for the power module 100 and facilitate heat dissipation for thermal management of the power module 100. The base plate 602 can include a base metal such as copper, aluminum or other similar materials, or a metal matrix composite (MMC) that can provide coefficient of thermal expansion (CTE) matching to reduce stress generated by heat. In one aspect, the MMC material can be a high conductivity metal such as copper, aluminum and other similar metals, a low CTE metal such as molybdenum, beryllium, tungsten, and / or a non-metallic composite material such as diamond, silicon carbide, beryllium oxide, graphite, embedded pyrolytic graphite or other similar materials. Depending on the material, the base plate 602 can be formed by machining, casting, stamping or other similar methods. To protect the surface of the base plate 602 and improve solderability, the base plate 602 can have a metal plating such as nickel, silver, gold and / or other similar materials. In one aspect, the base plate 602 can have a flat back surface. In one aspect, the base plate 602 can have a convex cross-section to improve planarity after reflow. In one aspect, the base plate 602 can have pin fins 642 for direct cooling, which will be further discussed later with reference to FIGS. 43-59.

[0046] The power module 100 can include a gasket 604. The gasket 604 can improve the sealing process by providing a liquid tight seal. In this regard, the power module 100 can include a dielectric sealant inside. The gasket 604 can be formed by injection molding, dispensing or other similar methods, applied to the grooves of the housing side wall 612, and compressed between the housing side wall 612 and the base plate 602.

[0047] The power module 100 can include one or more power substrates 606. The one or more power substrates 606 can provide electrical interconnection, voltage isolation, heat transfer, and other like things to the power device 302. The one or more power substrates 606 can be constructed as direct bond copper (DBC), active metal braze (AMB), insulated metal substrate (IMS), or other like things. In the case of an IMS structure, the one or more power substrates 606 and the base plate 602 can be integrated as the same element. In some aspects, the one or more power substrates 606 can be attached to the base plate 602 by solder, thermally conductive epoxy resin, silver sintering, or other like things. In one aspect, one, for a total of two, power substrates 606 can be used for each switch position 104.

[0048] The power module 100 can include one or more edge power contacts 608. The surface of one of the one or more edge power contacts 608 can form a V+ terminal or a first terminal 106. The surface of one of the one or more edge power contacts 608 can form a phase terminal or a third terminal 110. The one or more edge power contacts 608 can create a high-current path between an external system and the one or more power substrates 606. The one or more edge power contacts 608 can be manufactured from a thin metal sheet by an etching process, a stamping operation, or other similar means. To facilitate bending of the one or more edge power contacts 608 and assist in final assembly, the one or more edge power contacts 608 can have a partial thickness bend assist line 624. In one aspect, the one or more edge power contacts 608 can be bent over a captive fastener 622. In one aspect, the one or more edge power contacts 608 can be directly attached to the power substrate 606 by soldering, ultrasonic welding, or other similar means. To protect the surface and improve solderability, the one or more edge power contacts 608 can have a metal plating such as nickel, silver, gold, and / or other similar materials.

[0049] To assist in the attachment process, in one aspect, the base 636 of the edge power contact 608 can be split to form a foot. To protect the surface and improve solderability, the base 636 can have a metal plating such as nickel, silver, and / or gold.

[0050] The power module 100 can further include one or more switch positions 104. The one or more switch positions 104 can include a power device 302, and the power device 302 can include any combination of controllable switches and diodes arranged in parallel to meet requirements for current, voltage, and efficiency. The power device 302 can be attached by solder, conductive epoxy resin, silver sintering material, or other similar materials. The upper pads on the power device 302 including the gate and source can be wire bonded to their respective corresponding positions by a power wire bond 628. The power wire bond 628 can include wires of aluminum, aluminum alloy, copper, or other similar metals, and these wires can be attached to both legs by ultrasonic welding or other similar means to form a conductive arch between the two metal pads. A signal bond 626 can be formed in a similar manner, and the signal bond 626 can be made of aluminum, gold, copper, or other similar materials. In some embodiments, the diameter of the wire of the power wire bond of 626 can be made smaller than the wire of the power wire bond 628.

[0051] The power module 100 can further include one or more temperature sensors 610. This one or more temperature sensors 610 can be implemented by resistance temperature sensor elements directly attached to the power substrate 606. Other types of temperature sensors are contemplated, including resistance temperature detectors (RDTs) type sensors, Negative Temperature Coefficient (NTC) type sensors, optical type sensors, thermistors, thermocouples, and other similar ones. This one or more temperature sensors 610 can be attached by solder, conductive epoxy resin, silver sintered material, or other similar ones, and then wire bonded to the signal interconnection assembly 616. The power module 100 can further include one or more diagnostic sensors, and this one or more diagnostic sensors can include strain gauges that sense vibration and other similar ones. The diagnostic sensors can further determine humidity. Further, the diagnostic sensors can sense any environmental or device characteristics.

[0052] The power module 100 can further include a housing side wall 612. The housing side wall 612 can be formed of a synthetic material. In one aspect, the housing side wall 612 can be an injection molded plastic element. The housing side wall 612 can provide electrical insulation, voltage creepage distance and clearance, structural support, a cavity for holding voltage, and moisture barrier sealing. In one aspect, the housing side wall 612 can be formed by an injection molding process using reinforced high temperature plastic.

[0053] The power module 100 can further include a central power contact 614. The surface of the central contact 614 can form a V-terminal or a second terminal 108. The central power contact 614 can create a high-current path between an external system and the power device 302. The central power contact 614 can be manufactured from a thin metal sheet by an etching process, a stamping operation, or other similar means. The central power contact 614 can be separated from the underlying power substrate 606 by being embedded in the housing sidewall 612 (as shown), or, as will be described later, can also be soldered or welded to a secondary power substrate. As shown in FIG. 11, the central power contact 614 can include one or more openings 632 for receiving corresponding fasteners 634 that fasten the central power contact 614 to the housing sidewall 612.

[0054] As shown in FIG. 11, the lower switch position power devices 302 can be wire-bonded 640 directly from their terminals to the central power contact 614. To assist in bending at the final assembly stage, the central power contact 614 can have a partial-thickness bend assist line 624. To protect the surface and improve bondability, the central power contact 614 can have a metal plating such as nickel, silver, gold, and / or other similar materials.

[0055] The power module 100 can further include a signal interconnection assembly 616. This signal interconnection assembly can be a gate-source board. The signal interconnection assembly 616 can be a small signal circuit board that facilitates the electrical connection from the signal contacts to the power device 302. The signal interconnection assembly 616 can enable gate and source Kelvin connections, as well as connections to additional nodes or internal sensing elements. The signal interconnection assembly 616 can enable individual gate resistors for each power device 302. The signal interconnection assembly 616 can be a printed circuit board, a ceramic circuit board, a flexible circuit board, an embedded metal strip, or other similar types disposed within the housing sidewall 612. In one aspect, the signal interconnection assembly 616 can include a plurality of assemblies. In one aspect, the signal interconnection assembly 616 can include one plurality of assemblies for each switch position 104.

[0056] The power module 100 can further include a housing lid 618. The housing lid 618 can be a composite element. In one aspect, the housing lid 618 can be an injection-molded plastic element. The housing lid 618 can provide electrical insulation, voltage creepage and clearance distances, and a structural support. In this regard, the housing lid 618 can form a closed assembly together with the housing sidewall 612. This closed assembly can prevent foreign objects from entering the interior of the power module 100. In one aspect, the housing lid 618 can be formed by an injection molding process using a reinforced high-temperature plastic.

[0057] The power module 100 can further include a fastener 620. The fastener 620 can be a threaded screw. Other types of fasteners are also contemplated. To fasten a number of elements within the power module 100, the fastener 620 can be used to directly screw to the housing sidewall 612. The fastener 620 can be used for the attachment of the housing lid 618, the attachment of the signal interconnect assembly 616, the embedding of the central power contact 614 (if not embedded by another means), the fastening of the housing sidewall 612 to the base plate 602, and other similar matters.

[0058] The power module 100 can further include a captive fastener 622. The captive fastener 622 can be a hex nut placed within the housing sidewall 612 and within the housing lid 618, and can hold under those contacts so as not to fall off when the edge power contact 608 and the central power contact 614 are bent. Other types of fasteners or connectors implementing the captive fastener 622 are also contemplated. The captive fastener 622 can facilitate an electrical connection to an external busbar or cable. The captive fastener 622 can be arranged such that when the power module 100 is bolted to the busbar, the captive fastener 622 and the edge power contact 608 are pulled up into the bushing to form a better quality electrical connection. If the captive fastener 622 is fixed to the housing, due to the stiffness of the busbar, the captive fastener 622 will act to pull the bushing down into the power module 100, thereby forming an inadequate connection.

[0059] In one aspect, to prevent the captive fastener 622 from rotating, the housing grid 618 can include an opening having a shape that conforms to the outer shape of the captive fastener 622. The captive fastener 622 can receive a corresponding fastener (shown in FIG. 26). To facilitate electrical connection to an external busbar or cable, this corresponding fastener extends through the fastener hole 512 of the central power contact 614.

[0060] In one aspect, to prevent the captive fastener 622 from rotating, the housing sidewall 612 can include an opening having a shape that conforms to the outer shape of the captive fastener 622. The captive fastener 622 can receive a corresponding fastener (shown in FIG. 26). To facilitate electrical connection to an external busbar or cable, this corresponding fastener extends through the fastener hole 512 of this one or more edge power contacts 608.

[0061] To achieve a low internal inductance, the current path of the power module 100 can be wide, short, and overlapping whenever possible to achieve flux cancellation. Flux cancellation occurs when the current flowing within the loop is moving in the opposite direction in the immediate vicinity, effectively canceling out the associated magnetic field of the current. The main advantage of this modular approach is that the entire width of the footprint is utilized for conduction. To shorten the length through which the current has to flow within the structure, the height of the module can be minimized.

[0062] The power loop of the half-bridge leg is shown in FIG. 11. For the sake of illustration, the edge power contact 608 and the center power contact 614 are folded upward. The wide and low-profile edge power contact 608 and center power contact 614 allow current to flow directly into the power device 302. The effective current path from the terminal surface to the individual power devices 302 can be made functionally equivalent. Further, the power devices 302 can be placed in close proximity, which minimizes the imbalance in the relative loop inductance of the power devices 302 and ensures excellent thermal coupling.

[0063] FIG. 12A shows a top view of a leg of a power module constructed in accordance with the present disclosure, where each node is identified by a half-bridge topology, and FIG. 12B shows a schematic view of the leg of the power module of FIG. 12A constructed in accordance with the present disclosure, where each node is identified by a half-bridge topology. The power module 100 can include one or more diodes. In one aspect, the diodes in the schematic can be individual diodes (not shown) placed in antiparallel. In one aspect, the diodes in the schematic can be representative of the body diodes (not shown) of the power devices 302 implemented as MOSFETs.

[0064] In one aspect, the current path can start from the V+ node terminal 608, and the V+ node terminal 608 can be attached to the power substrate 630 and the drain D1 of the upper power device 302 among the power devices 302. Next, the source S1 of the upper power device 302 among the power devices 302 can be wire-bonded 628 to the lower power substrate pad 630, and the lower power substrate pad 630 is attached to the drain D2 of the lower power device 302 and the phase power terminal 608. Finally, the source S2 of the lower power device 302 can be wire-bonded 628 to the V- power contact terminal 614, and the V- power contact terminal 614 can be above the lower power substrate 630, which provides a certain overlap and can sufficiently voltage-isolate the V- power contact terminal 614 from the power substrate 630 below it.

[0065] FIG. 13 shows a cross-sectional view of the phase leg of FIGS. 12A and 12B, and FIG. 14 shows a cross-sectional view of the phase leg of FIGS. 12A and 12B including the current path. As shown in FIG. 13, when the tabs of the power contacts or terminals 106, 108, 110 are in the final configuration of the power module 100 structure, those tabs are bent. For the sake of showing details, the thickness of the layers is exaggerated. When visualizing the flow of current, all the elements in this figure can be considered conductors.

[0066] FIG. 13 further shows a terraced configuration of the power module 100 having a number of heights or altitudes. In this regard, the vertical position of the terminal 614 is shown higher than the vertical position of the terminal 608. This height difference is indicated by the arrow 702. This configuration having a number of heights can provide a critical loop, which will be described in more detail later. Further, this configuration having a number of heights may assist in providing bus connections, which will also be further described later.

[0067] FIG. 14 shows an overlay of the current path from the V+ terminal to the V- terminal, and this overlay represents a critical loop for clean switching according to aspects of the present disclosure. Inductance is proportional to the path length, decreases with an increase in the cross-sectional area of the conductor, and decreases due to magnetic flux cancellation of the magnetic field. The identified path starts from terminal 608, passes through the power board 630, crosses the power device 302, flows to the second board 630, passes through the power device 302, and is output by terminal 614. The identified path has a low inductance due to the following factors. The low height of the module. The power device 302 is located very close to terminals 608 and 614. All functional elements are densely packed. The wide width of the cross-sectional area of the conductor. The paralleled wire bonds 628 of each power device 302 are optimized. The current distribution between the power devices 302 is uniform. Magnetic flux cancellation occurs when the current direction reverses at the lower switch position. Magnetic flux cancellation occurs in the external V+ / V- bus bar.

[0068] FIG. 15 shows the contact surface and the bussing of the power module according to an aspect of the present disclosure. The contact surfaces of the V+ terminal 608 and the phase terminal 608 can be planar, while the top surface of the V- terminal 614 is offset from the remaining terminals. As shown in FIG. 15, this feature enables the external V+ / V- laminated bussings 802 and 804 to contact both terminals 608 and 614 without requiring the bending of the laminated bussings 802 and 804. The offset distance 702 (shown in FIG. 13) can be adjusted to match the thickness of the bus bar metal and the related dielectric separation film.

[0069] The low internal module inductance, combined with the minimized external inductance of the bassings 802, 804, 806 leading to the DC link capacitor 102 bank, optimizes the structure of the power module 100 with respect to clean and fast switching events with low voltage overshoot and stable performance. The smaller loop inductance reduces the total capacitance required on the DC link capacitor 102.

[0070] Collectively, these advantages enable smaller switching losses, higher switching frequencies, improved controllability, and reduced EMI. Ultimately, this helps system designers achieve a more power-dense and robust power conversion system.

[0071] Figures 16A, 16B, and 16C illustrate various aspects of the terminals of a power module according to aspects of the present disclosure. A multilayer layout with a V- terminal 614 at the center of the power module 100 may be essential for this design. Appropriate voltage isolation of this terminal 614 lying directly on the output traces on the power substrate 630 can be achieved by various structures forming a separation structure. This power module 100 design can be compatible with each of the following structures.

[0072] Figure 16A shows one aspect of the isolation of the V- terminal 614. In this aspect, the power module 100 can include an embedded separator 810 for the V- terminal 614. The embedded separator 810 can be formed of plastic or other synthetic materials. The embedded separator 810 can be located within the housing sidewall 612 as a strip 810 bridging the central region. In one aspect, the strip 810 can be formed of plastic. The power contact 614 can be embedded in the strip 810 by several methods, including mechanical fastening such as using a threaded screw, direct integration such as by a plastic overmolding process, riveting at a predetermined position using a plastic heat caulking operation, or other similar methods.

[0073] FIG. 16B shows another aspect of the separation of the V-terminal 614. In this aspect, the power module 100 can form the separation of the V-terminal 614 by a power substrate separator. In this regard, the secondary power substrate 812 can be utilized to provide separation by a layer of dielectric material of the secondary power substrate 812 such as ceramic or other similar materials. This secondary power substrate 812 can be soldered, sintered, or epoxy-bonded to the power substrate 630, while the power contact 614 can be soldered or welded to the upper metal pad of the secondary substrate. The advantage of this approach is that the heat transfer of the central power contact 614 is improved. This is because the secondary power substrate 812 has high conductivity and the secondary power substrate 812 is thought to facilitate heat removal from the power contact 614 to the cold plate or heat sink.

[0074] FIG. 16C shows another aspect of the separation of the V-terminal 614. In this regard, a thick film separator 814 can be utilized. The thick film separator 814 can utilize a thick film dielectric printed directly on the power substrate 630 and can provide voltage isolation. The central contact 614 can be attached to the thick film separator 814 by soldering directly to a thin layer of metal thick film printed on top of the dielectric film by epoxy resin or by other similar techniques.

[0075] In other aspects, the separation of the V-terminal 614 can include a suspended separation (not shown). In this aspect, the central power contact 614 can be suspended above the power substrate 630 with sufficient distance and attached to the housing sidewall 612 in a manner similar to the embedding technique. In this regard, a gel encapsulant filling the power module 100 can provide dielectric separation. The central contact 614 may need to utilize a high-rigidity material, but it may be possible to avoid interfering with the formation of the power wire bond 628 between the lower device and the contact.

[0076] Figure 17 schematically shows a plurality of parallel devices according to an aspect of the present disclosure. Specifically, Figure 17 shows three power devices 302. This is merely an example for ease of explanation and understanding. The power module 100 of the present disclosure can include any number of power devices 302.

[0077] Gate control signals and sense signals are significant factors in the switching performance of the power module 100 and may be particularly important at the paralleled switching positions 104. For high performance, robustness, and uniform current distribution, the signal loops within the power module 100 can be optimized. Similar to the power loop, the path can be configured such that the length and the width of the cross-section are limited, and the associated external components can be placed physically as close as possible to the signal terminals 502, 504.

[0078] Regarding a paralleled array of transistors, particularly power devices 302 such as MOSFETs, the timing and magnitude of the gate current must be balanced in order to match the turn-on conditions and turn-off conditions. The power module 100 can utilize individual ballasting resistors R G1 , R G2 , R G3 , which can be placed in close proximity to the gates of the power devices 302 and can be separated only by gate wire bonds. These components have low resistance and help buffer the current flowing through each individual power device 302. These components serve to decouple the gates of the power devices 302, prevent oscillation, and help ensure an equalized turn-on signal for the paralleled power devices 302. A single external resistor R DRIVER can be utilized and connected to these paralleled resistors R G1 , R G2 , R G3 to control the turn-on speed at the active switching position 104.

[0079] Gate resistors R G1 , R G2 , R G3 can be a surface mount package, an integrated thick film layer, a printed thick film, a chip capable of wire bonding, or other similar ones according to the application.

[0080] FIG. 18 shows a perspective view of an effective gate switching loop according to one aspect of the present disclosure, and FIG. 19 shows a top view of an effective gate switching loop according to one aspect of the present disclosure. The signal board or signal interconnect assembly 616 can have rails 816, 818 that connect to the gate and source Kelvin connector terminals 502, 504 at the edge of the board of the signal interconnect assembly 616. The upper rail 818 can be connected to the gate wire bond pads through individual gate resistors 820, and the lower rail 816 can be wire bonded directly to the source pad of the power device 302. Since the source Kelvin bond is not on the current path of the power source bond, this can be regarded as a true Kelvin connection. The Kelvin connection can be important for clean and efficient control and can reduce the influence of high drain-source current on the signal loop.

[0081] Figures 18 and 19 further illustrate optional signal connections 506, 508 on the left side of signal interconnect assembly 616. These connections can be used for temperature measurement or other forms of internal sensing. In some embodiments, this internal sensing can include diagnostic sensing including diagnostic signals, which can be generated by diagnostic sensors, which can include strain gauges sensing vibration, sensors sensing humidity, and other like sensors. Further, diagnostic sensors can sense any environmental or device characteristics. In one embodiment, temperature sensor 610 can be placed in a lower position. Of course, other positions and arrangements of temperature sensor 610 are contemplated. In one embodiment, wire bonds can be placed on the upper pads adjacent to the drain trace (e.g., adjacent to power device 302) for overcurrent measurement (also called desaturation protection in the case of IGBTs). Of course, other positions and arrangements for overcurrent measurement are contemplated. In some embodiments, an overcurrent sensor or desaturation sensor can sense the voltage drop determined by the connection to the drain of power device 302. In some embodiments, current can also be sensed by the voltage drop across power device 302.

[0082] This signal loop or this embodiment of signal interconnect assembly 616 can ensure quality control and measurement across any combination of paralleled power devices 302 at switch position 104. Standard PCB board-to-board connectors enable easy connection to external gate drivers and control circuits.

[0083] As shown, this gate distribution network can be implemented by a PCB. This gate distribution network can also be formed directly on the primary power substrate 630, directly on the base plate 602, or in other similar ways as a thick film circuit. This has the advantage of reducing the number of components of the power module 100 and has the option of printing the gate resistor 820. Since no solder terminals may be required, the gate resistor 820 can be made much smaller than the size of surface mount components on the PCB, and the gate resistor 820 can be actively cooled by a cold plate, which minimizes the thermal constraints on the sizing of this component.

[0084] Figure 20 shows an exemplary partial implementation including a power module according to an aspect of the present disclosure. In this regard, Figure 20 is a representative and exemplary structure for implementing the power module 100 of the present disclosure within a high-performance system. This general approach is adaptable to many other configurations and topologies and serves as a useful example of how to utilize the power module 100 within a converter. This particular example is for a three-phase motor drive. In this aspect, there are three power modules 100.

[0085] The disclosed power module 100 can be configured as an array of (three, as shown) half-bridge legs. Additional power modules 100 can be included in parallel to increase the current as required by the application.

[0086] The embodiment of Figure 20 can further include a cold plate 902. The cold plate 902 can be a high-performance liquid cold plate, heat sink, or other similar device that serves to transfer waste heat from the power module 100 to another source (such as liquid, air, etc.).

[0087] The embodiment of FIG. 20 can further include a DC link capacitor 102. The DC link capacitor 102 can be implemented as a filtering capacitor that interfaces a DC power source and the power module 100. In one aspect, the DC link capacitor 102 can be implemented as a single capacitor. In another aspect, depending on the power requirements of the load and / or a particular application, the DC link capacitor 102 can also be implemented as a number of components that form a "bank" of capacitors.

[0088] The embodiment of FIG. 20 can further include a cold plate support bar (standoff) 904. The cold plate support bar 904 can provide structural support for the cold plate 902. As shown, the cold plate support bar 904 can be configured to lift and arrange the terminals 106, 108 of the power module 100 to the same plane as the capacitor contact 906. In this aspect, a flat bus bar without bends can interconnect the components. For higher power density or for different types of capacitors, the height of the cold plate support bar 904 can be adjusted to best utilize the form factor available for the elements of the converter. This may have a corresponding trade-off of increasing the electrical loop length when a transition bend may be required and will depend on system-specific requirements.

[0089] FIG. 21 shows an exemplary laminated busbar according to the present disclosure, FIG. 22 shows one portion of the exemplary laminated busbar according to FIG. 21, and FIG. 23 shows another portion of the exemplary laminated busbar according to FIG. 21. The power terminal layout can be designed to facilitate simple and effective busbar interconnections. To minimize the inductance between the DC link capacitor 102 and the terminals 106, 108 of the power module 100, the busbar 900 can have thick conductors 910, 912, and the thick conductors 910, 912 of the busbar 900 can overlap. The thick conductors 910, 912 can be separated by a thin dielectric film 914. Currents flow in opposite directions through the respective sheets of the thick conductors 910, 912, which acts to significantly reduce the effective inductance between the power device 302 and the filtering DC link capacitor 102. The upper layer of the thick conductor 910 can be embossed to form a coplanar contact 918 on the mating surface with the DC link capacitor 102, which eliminates the need for washers or spacers that can impede electrical performance.

[0090] An exemplary laminated busbar 900 that aligns with the system-level layout shown above can include one or more of a conductor V+ plane 912, a conductor V− plane 910, and a dielectric film 914.

[0091] The conductor V+ plane 912 can connect the V+ terminal 106 of the power module 100 through contact 926 and the V+ terminal of the DC link capacitor 102 through contact 928, and can further have a terminal 920 for external connection.

[0092] The conductor V-plane 910 can connect the V-terminal 108 of the power module 100 through the contact 924 and the V-terminal of the DC link capacitor 102 through the contact 918, and can further have a terminal 922 for external connection. The contacts 918, 924, 926, 928 and the terminals 920, 922 can each be implemented to have a fastener opening configured to receive a fastener to form an electrical connection. Other electrical connection embodiments are also contemplated. The conductors 910, 912 can include an opening 940. The opening 940 of one of the conductors 910, 912 enables access to the contact of the other of the conductors 910, 912.

[0093] The dielectric film 914 can be implemented as a thin electrical insulator placed between the overlapping metal layers of the conductors 910, 912. The dielectric film 914 can provide dielectric insulation according to electrical safety standards. To minimize inductance, the dielectric film 914 can be kept as thin as possible. The film may cover all areas that do not require electrical connection on the top and bottom surfaces of the laminated busbar 900. Depending on the geometry and available space, the edge 916 of the laminated busbar 900 can be sealed by various methods including pinch seal lamination, epoxy resin seal, dielectric insert or the like. In some embodiments, the material of the dielectric film 914 can be adhered to the laminated busbar 900 by an acrylic adhesive. In some embodiments, the laminated busbar 900 can include a pinch seal of a polymer material. In some embodiments, pressure, heat and time can subsequently be applied to the laminated busbar 900 to form a laminate.

[0094] In some embodiments, the bus bar 900 and the conductors 910, 912 have an overall flat structure. More specifically, as shown in FIG. 15, the bus bar 900 can have an overall flat upper surface and an overall flat lower surface. In some embodiments, the thickness of one of the conductors 910, 912, together with the dielectric film 914, defines the offset distance 702 shown in FIG. 13. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 0.5 mm to 10 mm, which corresponds to the offset distance 702. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 1 mm to 2 mm, which corresponds to the offset distance 702. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 0.5 mm to 1 mm, which corresponds to the offset distance 702. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 2 mm to 3 mm, which corresponds to the offset distance 702. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 3 mm to 4 mm, which corresponds to the offset distance 702. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 4 mm to 5 mm, which corresponds to the offset distance 702. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 5 mm to 6 mm, which corresponds to the offset distance 702. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 6 mm to 7 mm, which corresponds to the offset distance 702. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 7 mm to 8 mm, which corresponds to the offset distance 702. In one embodiment, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be from 8 mm to 9 mm, which corresponds to the offset distance 702.In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be set to 9 mm to 10 mm, which corresponds to the offset distance 702.

[0095] FIG. 24 shows a phase output bus bar according to the present disclosure. For a three-phase motor drive such as this example, the phase output 930 may not require lamination or overlap to minimize inductance. This is because the phase output bus bar 930 drives an inductive load, which limits the need to reduce the inductance on the output path. Thus, the phase output bus bar 930 can be an independent element and can be much less complex than the structure of a stacked DC link. The phase output bus bar 930 can include an opening 934 for receiving a fastener to form an electrical connection.

[0096] It is highly desirable to measure the output current from each phase. This can be done in several ways, such as adding a low-resistance series resistor (referred to as a shunt) and measuring the voltage drop across it, including sensors that measure the magnetic field generated by the current to provide a proportional signal to the controller, or other similar methods. FIG. 24 shows one output bus bar 930 for this system and a first ferrous shield 932 added to concentrate the magnetic field in the area where the sensor may be placed to improve the accuracy of the measurement.

[0097] The phase output bus bar 930 or conductor can be configured to provide the transition from the phase output terminal 110 of each power module 100 to the external terminal connection. The form and arrangement of the phase output bus bar 930 or conductor can be changed and may depend on the specific topology or arrangement of the power module 100.

[0098] The first iron shield 932 or magnetic field concentrator can be configured to concentrate the magnetic field generated by the flow of current in the target area where the sensor may be placed. Although this may not be necessary for operation, this is a very advantageous arrangement for extracting the output current measurement in most converter systems.

[0099] FIG. 25 shows a perspective view of an exemplary embodiment including a power module and a laminated busbar according to an aspect of the present disclosure, FIG. 26 shows a first cross-sectional view of an exemplary embodiment including a power module and a laminated busbar according to FIG. 25, and FIG. 27 shows a second cross-sectional view of an exemplary embodiment including a power module and a laminated busbar according to FIG. 25. FIGS. 25-27 show a motor drive system layout including the laminated busbar 900 structure described above. As shown in FIGS. 25-27, the system can include a power module 100 array, a cold plate 902 assembly, a DC link capacitor 102, a DC link laminated busbar 900 assembly, and an output contact busbar 930.

[0100] FIG. 26 shows a cross-sectional view of the terminals of the DC link capacitor. FIG. 26 shows an embossed coplanar connection 918 implemented in the busbar 900 and a high degree of metal lamination at any executable position. The only separation between the plates 910, 912 can be the minimum area required for the thin metal sheet manufacturing process (embossing tool, work holding, tolerance, etc.) and the dielectric separation 914 (edge seal, creepage distance, space distance).

[0101] The cross-section of the power module 100 shown in FIG. 27 shows an optimized critical loop overlapping from the bank of the DC link capacitor 102 to the terminals 106, 108 of the power module 100. This reinforces the idea discussed in FIG. 15 due to the actual representative components and physical design constraints.

[0102] Overall, this low - inductance, high - current interconnection structure may be necessary for, and enabled by, the disclosed power module design. Overall, they form an effective and highly integrated low - inductance path between the bank of DC - link capacitors 102 and the switch positions 104. This structure enables efficient, stable, and very high - frequency switching of power devices 302, such as wide - bandgap semiconductors.

[0103] Figure 28 shows an exemplary single - module gate driver according to the present disclosure. This gate driver serves as a power amplifier that delivers drive current to the switch positions 104 while providing voltage isolation between the controller and the high - voltage power stage. It can also maintain isolation between driver blocks across the switch positions 104. With respect to high - frequency switching, the output stage of the driver can be physically placed close to the switch positions 104.

[0104] Additional features can be included for safety, such as under - voltage, over - voltage, and over - current protection. The gate - driver circuit can be configured to ensure that the power module 100 always functions within a safe operating region, and in case of a fault, the gate - driver circuit will shut down carefully.

[0105] According to this power - module design, a gate driver can be seated directly above the stacked power bushing 900. The gate driver can be formed as a single PCB and racked up or scaled in the same modular fashion as the power module 100. Alternatively, the driver can be integrated on a single PCB across an array of power modules 100. This reduces size but increases complexity due to the large number of high - voltage nodes on the board. The output stage of the driver can be placed directly adjacent to the board - to - board connector and brought into contact with the module signal pins.

[0106] FIG. 28 shows an exemplary single-module gate driver 400. For each switch position 104, the elements of the single-module gate driver 400 can be duplicated. The arrangement of each block and the specific layout may be system-dependent, and in this figure, they are configured as a generalized example.

[0107] The elements of the single-module gate driver 400 can include one or more of a control signal connector 410, an isolated power supply 420, signal isolation and conditioning components 430, an amplifier stage 440, a bulk gate resistor and local current filter 450, a sensor and protection component 460, a power module signal connector 470, and a creepage distance extension slot 480. The single-module gate driver 400 can be disposed on a printed circuit board (PCB 402).

[0108] The control signal connector 410 can be configured to interface the controller and the gate driver in such a manner that differential control and sensor signals can be transferred between the controller and the gate driver by means of a cable, a board-to-board connector, or a similar mechanism.

[0109] The isolated power supply 420 can be implemented as a DC-DC converter that supplies the positive and negative voltages required for turning on and off the power device 302. The isolated power supply 420 can be of sufficiently high power to supply the current required by the power device 302. The isolation between the control stage and the power stage can be a very important function of this block.

[0110] The signal isolation and conditioning components 430 can include circuitry for providing isolation of the control signal between the low-voltage control and the high-voltage power, and for conditioning the control signal for the amplifier stage 440 of the driver.

[0111] The amplifier stage 440 can be formed of individual components or integrated components. The amplifier stage 440 can convert an isolated low-power control signal into the current and voltage necessary for the switch position 104 to operate. For clean switching, the amplifier stage 440 should be physically as close as possible to the module signal terminal.

[0112] The bulk gate resistor and local current filter 450 can be the final stage before the output pin, the bulk gate resistor and the transition to the local current filter 450, and the bulk gate resistor and local current filter 450 can be used to adjust the turn-on and turn-off times of the switch position 104 to match the needs of a particular system. The bulk gate resistor and local current filter 450 can be a single set of passive elements or a portion of a network having different resistance values for turn-on and turn-off when different switching characteristics are desired. A local filter can also be used to ensure that the quality of the current source is maintained during the switching event.

[0113] The sensor and protection component 460 can include a circuit, and this circuit can include undervoltage and overvoltage protection, overcurrent protection, temperature sensing, and a mechanism for safely shutting down in case of a fault.

[0114] The power module signal connector 470 can be located on the lower surface of the PCB 402. The power module signal connector 470 can interface the gate driver and the power module 100 and provide a direct connection to the gate distribution network inside the power module 100. This connection can usually be facilitated by a board-to-board connector, a direct soldering connection, or other similar ones. A wire-to-board connection is also possible, but it may be necessary for the driver to be physically close to the power module 100.

[0115] The creepage distance extension slot 480 can be configured to improve the voltage isolation between driver stages and enable more compact packing of components. As the size of high-voltage power modules continues to shrink, voltage isolation is an increasingly important issue. Cutting a slot in the PCB 402 can be an option to increase the voltage creepage distance without adding board size. Other options include performing local potting of critical nodes and completely covering the entire assembly with a conformal dielectric coating. More specifically, the various components of the power module 100 including the PCB 402 can include individual and / or local potting of one or more components, and the various components of the power module 100 including the PCB 402 can include a conformal dielectric coating on one or more components, the entire PCB 402, and / or other assemblies of the power module 100.

[0116] When integrated with each other as shown in FIG. 29, the gate driver 400 and the power module 100 form a compact single unit in which an optimized low-inductance signal flow from the control source passes through the isolation, is amplified, and then is directly distributed through the gate resistor network to the gates of the paralleled power devices 302.

[0117] FIG. 30 shows a current sensing component according to an aspect of the present disclosure, and FIG. 31 shows the current sensing component according to FIG. 30 arranged with a phase output bus bar. There are numerous ways to sense current. In one aspect of the present disclosure shown in FIGS. 30 and 31, a sensor 980 such as a non-contact magnetic sensor can be utilized. The sensor 980 can be utilized with a first iron shield 932 to concentrate the magnetic field. The sensor 980 can utilize a small sensor chip placed in this region that generates a signal proportional to the output current. FIG. 30 shows an example of sensors on a single PCB 936 for all three phases, and FIG. 31 shows a complete output bus bar structure with a magnetic shield.

[0118] Figure 32 shows an exemplary three-phase motor drive power stack-up according to one aspect of the present disclosure. Specifically, Figure 32 shows an exemplary three-phase motor drive power stack-up that includes all of the functional components described previously. The system of Figure 32 is highly integrated and is well optimized for peak electrical performance. Additional features such as voltage sensing of the capacitor bank and an EMI shielding enclosure are contemplated and will be well integrated within this high-performance core.

[0119] Figure 33 schematically shows a plurality of parallel power devices according to an aspect of the present disclosure. Specifically, Figure 33 shows four power devices 302. The number of these power devices 302 is merely an example and is for ease of explanation and understanding. The power module 100 of the present disclosure can include any number of power devices 302.

[0120] Gate control signals and sense signals are significant factors in the switching performance of the power module 100 and can be particularly important at the paralleled switching positions 104. For high performance, robustness, and uniform current distribution, the signal loops within the power module 100 can be optimized. In some aspects, a multilayer printed circuit board (PCB) can be utilized for this signal loop. In these aspects, parallel planes can be used for further reduction of flux cancellation and inductance. Thus, these wide and short paths can be folded back to cancel the magnetic field. This helps to provide the best possible signal loop when there are constraints on the form factor of the power module 100. Similar to the power loop, the path can be configured such that its length and the width of its cross-section are limited, and the associated external components can be placed physically as close as possible to the signal terminals 502, 504.

[0121] Regarding a parallelized array of transistors, particularly power devices 302 such as MOSFETs, in order to match the turn-on conditions and turn-off conditions, the timing and magnitude balance of the gate current must be achieved. Power module 100 can utilize individual ballasting resistors 820 (R G1 、R G2 、R G3 、R G4 ), and these resistors can be placed in close proximity to the gates of power devices 302 and can be separated only by gate wire bonds. The individual ballasting resistors 820 (R G1 、R G2 、R G3 、R G4 ) can have low resistance and can help buffer the current flowing through each individual power device 302. The individual ballasting resistors 820 (R G1 、R G2 、R G3 、R G4 ) serve to decouple the gates of power devices 302, prevent oscillations, and help ensure an equalized turn-on signal for the parallelized power devices 302. A single external resistor R DRIVER can be utilized and connected to these parallelized resistors 820 (R G1 、R G2 、R G3 、R G4 ) to control the turn-on speed of the active switch position 104. In one aspect, the ballasting resistors 820 can be associated with each power device 302. In one aspect, the individual ballasting resistors 820 can be associated with each individual power device 302.

[0122] In an additional aspect, power module 100 includes individual ballasting source Kelvin resistors 822 (R S1 、R S2 、R S3 、R S4can be utilized, and those resistors can be placed in the immediate vicinity of the source Kelvin connection of the power device 302. In one aspect, the source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 ) can be separated only by source Kelvin wire bonds. In one aspect, the source Kelvin resistors 822 can be associated with respective power devices 302. In one aspect, the individual source Kelvin resistors 822 can be associated with respective individual power devices 302. The source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 ) can have low resistance and can help buffer the current flowing through the source Kelvin connection of each individual power device 302. The source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 ) can serve to decouple the source Kelvin connection of the power device 302, prevent oscillations, and can help ensure an equalized signal for the paralleled power devices 302. In certain aspects, the source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 ) can be configured and implemented to address mismatches of individual power devices 302, layouts of individual power devices 302, and other like things.

[0123] In certain embodiments, to prevent or reduce feedback oscillations between individual power devices 302, to attenuate feedback oscillations between individual power devices 302, to decouple source Kelvin signals between individual power devices 302, to block current flowing between source Kelvin signals of individual power devices 302, to equalize current flowing between source Kelvin signals of individual power devices 302, to force current flowing through individual power devices 302 to flow through a current path, and to achieve other like things, source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 ) can be configured and implemented. Further, source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 ) can reduce signaling inductance, ensure that the gate operation of power device 302 is not slowed down, minimize the gate / source overvoltage of power device 302, and other like things.

[0124] Source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 ) can be surface mount packages, integrated thick film layers, printed thick films, wire bondable chips, "natural" resistance paths (material / structure interfaces that inherently add resistance), or other like things depending on the application. In one or more embodiments, the resistance values of source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 ) and resistors 820 (R G1 , R G2 , R G3 , R G4 ) can be made equivalent. In one or more embodiments, source Kelvin resistors 822 (R S1 , R S2 , RS3 , R S4 ), and the resistor 820 (R G1 , R G2 , R G3 , R G4 ) can have different resistance values. In one or more embodiments, the source Kelvin resistor 822 (R S1 , R S2 , R S3 , R S4 ) can have a resistance value in the range of 0.5 ohm to 1.5 ohms. In one or more embodiments, the source Kelvin resistor 822 (R S1 , R S2 , R S3 , R S4 ) can have a resistance value in the range of 0.5 ohm to 2 ohms. In one or more embodiments, the source Kelvin resistor 822 (R S1 , R S2 , R S3 , R S4 ) can have a resistance value in the range of 0.5 ohm to 5 ohms. In one or more embodiments, the source Kelvin resistor 822 (R S1 , R S2 , R S3 , R S4 ) can have a resistance value in the range of 0.5 ohm to 20 ohms. In one or more embodiments, the resistor 820 (R G1 , R G2 , R G3 , R G4 ) can have a resistance value in the range of 1 ohm to 20 ohms. In one or more embodiments, the resistor 820 (R G1 , R G2 , R G3 , R G4 ) can have a resistance value in the range of 1 ohm to 5 ohms. In one or more embodiments, the resistor 820 (R G1 , R G2 , R G3 , R G4 ) can have a resistance value in the range of 1 ohm to 10 ohms. In one or more embodiments, the resistor 820 (R G1 , R G2 , R G3 , R G4) The resistance value can be in the range of 1.5 ohms to 6 ohms.

[0125] FIG. 34 shows a top view of an active gate switching loop and a power module according to one aspect of the present disclosure. Specifically, FIG. 34 shows that the signal board or signal interconnect assembly 616 can have rails 816, 818 that connect to gate and source Kelvin connector terminals 502, 504 at the edge of the board of the signal interconnect assembly 616. Rail 818 can be connected to the gate wire bond pads through individual gate resistors 820 (resistors R G1 , R G2 ,...R GN ), and rail 816 can be connected to the source pads of the power device 302 through individual resistors 822 (resistors R S1 , R S2 , R S3 ,...R SN ). Since the source Kelvin bond is not on the current path of the power source bond, this can be regarded as a true Kelvin connection. Kelvin connections can be important for clean and efficient control and can reduce the influence of high drain-source currents on the signal loop.

[0126] FIG. 34 further shows optional signal connections 506, 508 on the signal interconnect assembly 616. Connections 506, 508 can be used for temperature measurement or other forms of internal sensing. In some aspects, this internal sensing can include diagnostic sensing including diagnostic signals, which can be generated by diagnostic sensors, and the diagnostic sensors can include strain gauges that sense vibration, sensors that sense humidity, and other similar sensors. Further, the diagnostic sensors can sense any environmental or device characteristics.

[0127] In one aspect, this sensor can be a temperature sensor 610, and the temperature sensor 610 can be placed on the power substrate 606 or on the base plate 602. In one aspect, the power substrate 606 or the base plate 602 can have a metal surface and / or a conductive surface that supports the power device 302. In one aspect, a portion 850 of the surface of the power substrate 606 or the base plate 602 can be a portion different from the surface that supports the power device 302. In one aspect, the portion 850 can be a portion where the metal surface and / or the conductive surface is removed, a portion where the metal surface and / or the conductive surface is etched, a portion where the metal surface and / or the conductive surface does not exist, or other similar portions. In one aspect, the temperature sensor 610 can be placed in an area on the power substrate 606 or on the base plate 602 where the metal surface of the power substrate 606 or the base plate 602 is removed, or an area where the metal surface of the power substrate 606 or the base plate 602 does not exist. In these aspects, the temperature sensor 610 can be separated, and the temperature sensor 610 can provide a more accurate temperature reading. Of course, other positions and arrangements of the temperature sensor 610 are also contemplated.

[0128] This embodiment of this signal loop or signal interconnect assembly 616 can ensure quality control and measurement across any combination of the paralleled power devices 302 at the switch position 104. Standard PCB board-to-board connectors enable easy connection to external gate drivers and control circuits.

[0129] As shown, this gate distribution network can be implemented by a PCB. This gate distribution network can also be formed directly on the primary power substrate 630, directly on the base plate 602, or in other similar ways as a thick film circuit. This has the advantage of reducing the number of components in the power module 100 and has the option of printing resistors 820, 822. In various aspects, thick film metal implementations or deposited and patterned metal implementations can be utilized on the housing sidewall 612 and / or on the housing lid 618 itself. Since solder terminals may not be required, resistors 820, 822 can be made much smaller than the size of surface mount components on a PCB, and resistors 820, 822 can be actively cooled by a cold plate, which minimizes the thermal constraints on the sizing of this component.

[0130] FIG. 35 shows a perspective view of a configuration including a power module and a housing according to one aspect of the present disclosure, FIG. 36 shows a side view of the configuration of FIG. 35, FIG. 37 shows a partial perspective view of the configuration of FIG. 35, FIG. 38 shows another partial perspective view of the configuration of FIG. 35, FIG. 39 shows another partial perspective view of the configuration of FIG. 35, FIG. 40 shows another partial perspective view of the configuration of FIG. 35, and FIG. 41 shows another partial perspective view of the configuration of FIG. 35.

[0131] Specifically, FIGS. 35 to 40 show a structure 3500 that can be used for the purpose of implementing one or more of the power module 100, bus bar 900, driver 400, controller of the power module 100 and driver 400, capacitor 102, sensor 980, and other similar ones. In one aspect, the structure 3500 can utilize one or more of the power module 100, bus bar 900, driver 400, controller of the power module 100 and driver 400, capacitor 102, sensor 980, and other similar ones described herein. In one aspect, the structure 3500 can utilize one or more other types of power modules, bus bars, drivers, controllers of power modules and drivers, capacitors, sensors, and other similar ones.

[0132] In one aspect, the structure 3500 can be implemented with a variety of power topologies including half-bridge, full-bridge, three-phase, boost, chopper, DC-DC converter, and similar arrangements and / or topologies. In the aspect shown in FIGS. 35 to 40, the structure 3500 is shown as implementing a three-phase topology.

[0133] Referring particularly to FIG. 35, the structure 3500 can include a housing 3502. The housing 3502 can include a top 3504, a central portion 3506, and a bottom 3508. However, the housing 3502 can also be implemented with fewer or more housing portions than this. In one aspect, the housing 3502 can be made of a composite material, plastic material, metal material, or other similar ones. In one aspect, the housing 3502 can be made of a plastic material. In one aspect, the housing 3502 can be made of an injection-molded plastic material.

[0134] Referring further to FIG. 35, in one aspect, the top 3504 can be mechanically fixed to the assembly 3500 using mechanical fasteners 3512. In other aspects, other assemblies and / or configurations can be utilized to fix the top 3504 to the assembly 3500. In one aspect, the top 3504 can include cooling slots 3510 that allow air within the assembly 3500 to flow through the assembly 3500 for cooling purposes.

[0135] Referring further to FIG. 35, in one aspect, a central portion 3506 can be disposed between the top 3504 and the bottom 3508. The bottom 3508 can be configured to receive the top 3504 and the central portion 3506 to provide a housing for the various components of the assembly 3500. In one aspect, further, the central portion 3506 and / or the bottom 3508 can be configured such that the phase output 930 can extend through the central portion 3506 and / or the bottom 3508. In other aspects implementing other topologies, further, the central portion 3506 and / or the bottom 3508 can be configured such that other types of outputs can extend through the central portion 3506 and / or the bottom 3508.

[0136] Referring further to FIG. 35, in one aspect, the bottom 3508 can support the central portion 3506. In one aspect, the bottom 3508 can include a support portion 3514 for supporting the phase output 930. In another aspect, the bottom 3508 can include a support portion 3514 for supporting other types of outputs when implementing other topologies.

[0137] In one or more aspects, the bottom 3508 can further include an opening 3528 configured to allow a fluid connection tube 3516 to the cold plate 902 to extend therefrom. In one aspect, for cooling purposes associated with the cold plate 902, the fluid connection tube 3516 can receive a fluid source and / or deliver a fluid.

[0138] Referring to FIG. 36, in one aspect, the assembly 3500 can include conductors 910, 912. In one aspect, the conductors 910, 912 can be disposed on a side of the assembly 3500 opposite to the side of the phase output 930. In one aspect, the conductors 910, 912 can be disposed on a side of the assembly 3500 opposite to the side of another type of output for another type of topology.

[0139] In one aspect, the assembly 3500 can include a cooling fan 3518. The cooling fan 3518 can be configured to move air through the housing 3502 of the assembly 3500 to cool various components of the assembly 3500. In one aspect, the cooling fan 3518 can be disposed at an opening on a side surface of the assembly 3500 in such a manner that the cooling fan 3518 moves air through the opening and similarly through the cooling slots 3510 shown in FIG. 35.

[0140] In one aspect, the assembly 3500 can include an electrical interface 3520. In one aspect, the electrical interface 3520 can be connected to one or more of the power module 100, the bus bar 900, the driver 400, the controller of the power module 100 and the driver 400, the capacitor 102, the sensor 980, and other similar ones, and can exchange data with one or more of the power module 100, the bus bar 900, the driver 400, the controller of the power module 100 and the driver 400, the capacitor 102, the sensor 980, and other similar ones. In one aspect, this data can be a control signal, a sensor signal, a drive signal, a signal for loading, removing, or changing software, and other similar signals. In one aspect, alternatively or in addition, the electrical interface 3520 (or other connectors along this wall) can supply low voltage (12 - 24V) power to the controller and the driver 400. In certain aspects, the assembly 3500 can be configured to be connected to a power source at the conductors 910, 912 and be fully operated, controlled, and analyzed through the electrical interface 3520 to provide an output from the phase output 930.

[0141] Referring to FIG. 37, an assembly 3500 is shown with the top 3504 removed for ease of explanation and understanding. In one aspect, as shown by FIG. 37, the central portion 3506 can include a portion 3526 for receiving a mechanical fastener 3512. FIG. 37 further shows a controller 3522, a driver 400, and a wired connection 3524 between the controller 3522 and the driver 400.

[0142] Referring to FIG. 38, an assembly 3500 is shown with the controller 3522, the driver 400, and the wired connection 3524 removed from the central portion 3506 for ease of explanation and understanding. Specifically, FIG. 38 shows a surface for supporting the controller 3522, the driver 400, the wired connection 3524, and other similar ones.

[0143] FIG. 39 shows the structure 3500 with the central part 3506 removed for ease of explanation and understanding. Specifically, FIG. 39 shows the arrangement of the bus bar 900, the power module 100, the cold plate 902, and the sensor 980. Specifically, FIG. 39 shows the arrangement and configuration of the bus bar 900, the power module 100, the cold plate 902, and the sensor 980 supported by the bottom 3508.

[0144] FIG. 40 shows the structure 3500 with the central part 3506 and the bus bar 900 removed for ease of explanation and understanding. As shown in FIG. 40, the arrangement of the power module 100, the cold plate 902, and the sensor 980 in the structure 3500 is shown. Specifically, FIG. 40 shows the component 3530 for ensuring the attachment of the input connection and the output connection to the phase output 930 and the conductor 910. In one aspect, the component 3530 for ensuring the attachment can be a mechanical fastener. In one aspect, this mechanical fastener can be a female threaded component configured to receive a corresponding male threaded component. In one aspect, this mechanical fastener can be a hex nut.

[0145] FIG. 41 shows the structure 3500 with the central part 3506, the bus bar 900, the power module 100, the cold plate 902, and the sensor 980 removed for ease of explanation and understanding. As shown in FIG. 41, the bottom 3508 of the structure 3500 can include a structure 3540 for connecting to the central part 3506. As shown in FIG. 41, the bottom 3508 of the structure 3500 can include a structure 3542 for holding at least the power module 100 and the cold plate 902. As shown in FIG. 41, the bottom 3508 of the structure 3500 can include a structure 3544 for holding at least the capacitor 102. In some aspects, this structure can be a rib, a reinforcing part, a mechanical fastener receiving part, and other similar ones.

[0146] In one aspect, the assembly 3500 can be implemented as an evaluation system, an evaluation kit, a test system, or other similar types. For the sake of brevity, this implementation aspect is broadly defined as an evaluation kit. In a particular aspect, the evaluation kit implementation aspect of the assembly 3500 can be configured such that at conductors 910, 912 it is connected to a power source and is fully operated, controlled, and analyzed through the electrical interface 3520 to provide an output from the phase output 930. In this regard, a user can implement the evaluation kit implementation aspect of the assembly 3500 to perform tests, mockups, and other similar things before implementing and manufacturing a system that implements the power module 100 of the present disclosure. In one aspect, a user can implement the evaluation kit implementation aspect of the assembly 3500 to perform tests, mockups, and other similar things regarding a particular application of the power module 100. In one aspect, this application can be a power system, a motor system, an automotive motor system, a charging system, an automotive charging system, a vehicle system, an industrial motor drive, an embedded motor drive, an uninterruptible power supply, an AC-DC power supply, a welding machine power supply, a military system, an inverter, for a wind turbine, for a solar power panel, for a tidal power generation, and an inverter, a converter, and other similar types for an electric vehicle (EV).

[0147] FIG. 42 shows a method of implementing and operating an assembly including a power module. Specifically, FIG. 42 shows a method 4200 of implementing and operating an assembly. In one aspect, the method 4200 can be implemented using the assembly 3500 disclosed herein.

[0148] As shown in frame 4202, method 4200 can further include assembling the power module 100 and associated components within the housing 3502 to form an assembly 3500. In one aspect, the assembly 3500 can be assembled to include one or more of the power module 100, busbar 900, driver 400, the controller of the power module 100 and driver 400, capacitor 102, sensor 980, and other like items. In one aspect, the assembly 3500 can be assembled using one or more of the power module 100, busbar 900, driver 400, the controller of the power module 100 and driver 400, capacitor 102, sensor 980, and other like items described herein. In one aspect, the assembly 3500 can be assembled to include one or more other types of power modules, busbars, drivers, the controller of the power module and driver, capacitors, sensors, and other like items.

[0149] Method 4200 can further include connecting this assembly to a power source 4204. In one aspect, the conductors 910, 912 of the assembly 3500 can be connected to a power source. In one aspect, the conductors 910, 912 of the assembly 3500 can be connected to a DC power source.

[0150] Method 4200 can further include operating assembly 3500 4206. In one aspect, assembly 3500 can be operated such that one or more of power module 100, bus bar 900, driver 400, the controller of power module 100 and driver 400, capacitor 102, sensor 980, and other like ones provide an output. In one aspect, assembly 3500 can be programmed to implement the aspect of operating 4206 of assembly 3500. In one aspect, the controller of assembly 3500 can be programmed to implement the aspect of operating assembly 3500. In one aspect, driver 400 of assembly 3500 can be programmed to implement the aspect of operating assembly 3500.

[0151] Method 4200 can further include measuring 4208 various operating parameters of the assembly 3500 that includes the power module 100 and related components. In one aspect, the assembly 3500 can be operated such that various internal sensors output sensor data. In one aspect, the assembly 3500 can be operated and connected to external sensors such as an oscilloscope, a computer system, and other like things that output sensor data. In one aspect, these various sensor data can be collected by a computer system. This computer system can be assumed to include a processor, memory, an operating system, and other like things. In one or more aspects, this output sensor data can be based on switching losses, temperature, inductance, switching speed, overshoot, waveform analysis, and other like things related to the power module 100 or other components implemented by the assembly 3500, and / or can include switching losses, temperature, inductance, switching speed, overshoot, waveform analysis, and other like things related to the power module 100 or other components implemented by the assembly 3500. In one aspect, measuring 4208 various operating parameters of the assembly 3500 can relate to a particular application of the power module 100. In one aspect, this application can be a power system, a motor system, an automotive motor system, a charging system, an automotive charging system, a vehicle system, an industrial motor drive, an embedded motor drive, an uninterruptible power supply, an AC-DC power supply, a welding machine power supply, a military system, for a wind turbine, for a solar power panel, for a tidal power generation, and for an inverter, a converter for an electric vehicle (EV), and other like things.

[0152] Method 4200 can further include outputting these operation parameters to a man-machine interface 4210. In one aspect, these operation parameters can be analyzed by a computer system. In one aspect, the computer system can analyze the operation parameters including sensor data to generate an output. In one aspect, this output can be provided to a man-machine interface. In one aspect, this man-machine interface can include one or more of a display device, a printed output, an analysis file, and other similar ones.

[0153] Method 4200 can further include changing the aspect of this configuration and repeating method 4200 4212. In one aspect, the configuration 3500 can be changed to include additional components consistent with the present disclosure. In one aspect, the configuration 3500 can be changed to include fewer components consistent with the present disclosure. In one aspect, the controller program of the configuration 3500 can be changed. In one aspect, the driver 400 program of the configuration 3500 can be changed. In one aspect, the operating voltage or current of the configuration 3500 can be changed.

[0154] In one or more aspects, the power module 100 of the present disclosure can be configured to operate with various performance characteristics. However, these performance characteristics are not necessarily limited to the specific embodiments and aspects described in the present disclosure. In the following, these various performance characteristics will be described together with exemplary details of exemplary structures and embodiments that can partially provide these performance characteristics. However, these various performance characteristics should not be limited to the specific aspects of the power module 100 disclosed. In certain aspects, these various performance characteristics and exemplary structural embodiments may be related to low-voltage embodiments. In one aspect, a low-voltage embodiment can be defined to include embodiments that operate at a voltage lower than 3.4 Kv. In one aspect, a low-voltage embodiment can be defined to include embodiments that operate at a voltage lower than 3.3 Kv. In one aspect, a low-voltage embodiment can be defined to include embodiments that operate at a voltage lower than 3.0 Kv. In one aspect, low-voltage embodiments include embodiments that operate in the ranges of 100 v to 3400 v, 100 v to 3300 v, 100 v to 3000 v, 100 v to 2500 v, 100 v to 2000 v, and 100 v to 1700 v. In one aspect, a high-voltage embodiment can be defined to include embodiments that operate at a voltage higher than 3.4 Kv. In one aspect, a high-voltage embodiment can be defined to include embodiments that operate at a voltage higher than 3.3 Kv. In one aspect, a high-voltage embodiment can be defined to include embodiments that operate at a voltage higher than 3.0 Kv. In one aspect, high-voltage embodiments include embodiments that operate in the ranges of 3400 v to 5000 v, 3300 v to 5000 v, 3000 v to 5000 v, 3400 v to 10000 v, 3300 v to 10000 v, and 3000 v to 10000 v. In this regard, aspects of the present disclosure that implement the low-voltage embodiments defined herein can be distinguished from the high-voltage embodiments defined herein.For example, in some aspects, a low-voltage implementation can be identified from a high-voltage implementation based on one or more of the following: the spacing between conductors and / or terminals of the power module 100, the configuration of the power loop within the power module 100, the basic layout of the power module 100, the current-carrying capacity and / or current-carrying ability of the power module 100, the substrate thickness of the power module 100, the terminal layout of the power module 100, the thermal performance of the power module 100, the configuration for addressing the creepage distance issue of the power module 100, the configuration for addressing the air distance issue of the power module 100, the insulation configuration of the power module 100, the bus bar configuration of the power module 100, and / or other similar ones. In this regard, at least one or more of the above aspects can identify a low-voltage implementation from a high-voltage implementation.

[0155] In one or more aspects, the power module 100 of the present disclosure can be configured to operate with the following parasitic stray inductances. In one aspect, the total stray inductance value of the critical power switch within loop 114 shown in FIG. 1B of the power module 100 can be made less than 12 (nH). In one aspect, the total stray inductance value of the critical power switch within loop 114 shown in FIG. 1B of the power module 100 can be made less than 11 (nH). In one aspect, the total stray inductance value of the critical power switch within loop 114 shown in FIG. 1B of the power module 100 can be made less than 7 (nH). In one aspect, the total stray inductance value of the critical power switch within loop 114 shown in FIG. 1B of the power module 100 can be made less than 4 (nH). In one aspect, the total stray inductance value of the critical power switch within loop 114 shown in FIG. 1B of the power module 100 can be made less than 3 (nH).

[0156] In one aspect, the total stray inductance value of the critical power switches in loop 114 shown in FIG. 1B of power module 100 can have a range of 12 (nH) to 2 (nH), 10 (nH) to 2 (nH), and 4 (nH) to 2 (nH).

[0157] In one aspect, for power module 100 having a specific loop length and / or cross-sectional area, the total stray inductance value of the critical power switches in loop 114 shown in FIG. 1B of power module 100 can be made less than 4 (nH). In one aspect, for power module 100 having a specific loop length and / or cross-sectional area, the total stray inductance value of the critical power switches in loop 114 shown in FIG. 1B of power module 100 can be made less than 8 (nH). In one aspect, for power module 100 having a specific loop length and / or cross-sectional area, the total stray inductance value of the critical power switches in loop 114 shown in FIG. 1B of power module 100 can be made less than 12 (nH). In one aspect, for power module 100 having a specific loop length and / or cross-sectional area, the total stray inductance value of the critical power switches in loop 114 shown in FIG. 1B of power module 100 can have a range of 4 (nH) to 2 (nH). In one aspect, for power module 100 having a specific loop length and / or cross-sectional area, the total stray inductance value of the critical power switches in loop 114 shown in FIG. 1B of power module 100 can have a range of 8 (nH) to 4 (nH). In one aspect, for power module 100 having a specific loop length and / or cross-sectional area, the total stray inductance value of the critical power switches in loop 114 shown in FIG. 1B of power module 100 can have a range of 12 (nH) to 8 (nH).

[0158] In one or more aspects, the power module 100 of the present disclosure can be configured to operate at the following switching speeds.

[0159] In one aspect, the switching speed of the power module 100 can be made less than 100 (A / nanosecond) di / dt. In one aspect, the switching speed of the power module 100 can be made less than 90 (A / nanosecond) di / dt. In one aspect, the switching speed of the power module 100 can be made less than 80 (A / nanosecond) di / dt. In one aspect, the switching speed of the power module 100 can be made less than 50 (A / nanosecond) di / dt. In one aspect, the switching speed of the power module 100 can be made less than 35 (A / nanosecond) di / dt.

[0160] In one aspect, the switching speed of the power module 100 can have a range of 30 to 100 (A / nanosecond) di / dt. In one aspect, the switching speed of the power module 100 can have a range of 30 to 70 (A / nanosecond) di / dt. In one aspect, the switching speed of the power module 100 can have a range of 40 to 90 (A / nanosecond) di / dt. In one aspect, the switching speed of the power module 100 can have a range of 30 to 40 (A / nanosecond) di / dt.

[0161] In one aspect, the switching speed of the power module 100 can be made less than 120 (V / nanosecond) dv / dt. In one aspect, the switching speed of the power module 100 can be made less than 100 (V / nanosecond) dv / dt. In one aspect, the switching speed of the power module 100 can have a range of 20 (V / nanosecond) dv / dt to 100 (V / nanosecond) dv / dt. In one aspect, the switching speed of the power module 100 can have a range of 40 (V / nanosecond) dv / dt to 100 (V / nanosecond) dv / dt. In one aspect, the switching speed of the power module 100 can have a range of 60 (V / nanosecond) dv / dt to 100 (V / nanosecond) dv / dt. In one aspect, the switching speed of the power module 100 can have a range of 80 (V / nanosecond) dv / dt to 100 (V / nanosecond) dv / dt. In one aspect, the switching speed of the power module 100 can have a range of 60 (V / nanosecond) dv / dt to 80 (V / nanosecond) dv / dt. In one aspect, the switching speed of the power module 100 can have a range of 40 (V / nanosecond) dv / dt to 60 (V / nanosecond) dv / dt. In one aspect, the switching speed of the power module 100 can have a range of 20 (V / nanosecond) dv / dt to 40 (V / nanosecond) dv / dt. In one aspect, the switching speed of the power module 100 can have a range of 60 (V / nanosecond) to 80 (V / nanosecond), 40 (V / nanosecond) to 60 (V / nanosecond), 20 (V / nanosecond) to 40 (V / nanosecond).

[0162] In one or more aspects, the power module 100 of the present disclosure can be configured to operate with the following switching losses.

[0163] In one aspect, the switching loss of the power module 100 can be made less than 0.5 (mJ / A) millijoules per ampere. In one aspect, the switching loss of the power module 100 can be made less than 0.4 (mJ / A) millijoules per ampere. In one aspect, the switching loss of the power module 100 can be made less than 0.25 (mJ / A) millijoules per ampere. In one aspect, the switching loss of the power module 100 can have a range of 0.5 (mJ / A) millijoules per ampere to 0.25 (mJ / A) millijoules per ampere. In one aspect, the switching loss of the power module 100 can have a range of 0.25 (mJ / A) millijoules per ampere to 0.4 (mJ / A) millijoules per ampere.

[0164] In aspects of the present disclosure, the width and length of the power module 100 may be scalable such that it can be configured to have a larger width (more power devices 302, smaller inductance), or to have a smaller size (smaller size, lower cost). The following table shows various range embodiments, including a practical minimum width and an expected maximum size (approximately square footprint). Power device utilization can be defined as the percentage calculated by the ratio of the power device area to the total power module area. In one aspect, the area utilized in the present disclosure is calculated by multiplying the width by the length. In this regard, the width can be defined along an axis extending across the power module 100 as shown in FIG. 11, and the length can be defined along an axis perpendicular to the width as shown in FIG. 11. The table below shows a particular set of non-limiting specifications.

[0165]

Table 1

[0166] In one aspect of the present disclosure, the power module 100 can have a power device utilization area in the range of 7 - 10%. In one aspect of the present disclosure, the power module 100 can have a power device utilization area in the range of 6 - 8%. In one aspect of the present disclosure, the power module 100 can have a power device utilization area in the range of 5 - 7%.

[0167] In various aspects, the height of the power module 100 may also be scalable. In this case, the power module 100 can be configured to be as thin as possible to minimize inductance. This height can be set based on (A) the creepage distance and air distance specifications required for 1700V operation, (B) the height of the wire bond, and (C) the type of encapsulation material used. For low-voltage modules (650V), certain design changes can be implemented to reduce the height. Conversely, for high-voltage devices, the power module 100 can also be made taller. In various aspects, the height utilized in the present disclosure is defined as perpendicular to the width and length. Referring to FIG. 4A, an exemplary height of the power module 100 is shown. The height of the power module can be in the range of 7mm - 30mm, 9mm - 11mm, 11mm - 13mm, 13mm - 15mm, 15mm - 17mm, 17mm - 19mm, 19mm - 21mm, 21mm - 23mm, and 23mm - 27mm. The following table shows a specific set of non-limiting specifications.

[0168]

Table 2

[0169] Power Contact Parameters The power contacts or terminals 106, 108, 110 can be configured and constructed to be wider and to occupy as large a percentage as possible of the power module 100 within a given practical voltage creepage / clearance limit. The width ratio is the comparison of the width of the contacts or terminals 106, 108, 110 to the width of the power module 100. In one aspect, the width of the power module 100 can be the width of the base plate 602. In one aspect, the width of the power module 100 can be the width of one or more power substrates 606. In one aspect, the width of the power module 100 can be the width between the housing sidewalls 612. In one aspect, the width of the power module 100 can be the width of the housing lid 618. The length ratio is taking the contact length of all three contacts or terminals 106, 108, 110 and comparing it to the overall length of the power module 100. In one aspect, the length of the power module 100 can be the length of the base plate 602. In one aspect, the length of the power module 100 can be the length of one or more power substrates 606. In one aspect, the length of the power module 100 can be the length between the housing sidewalls 612. In one aspect, the length of the power module 100 can be the length of the housing lid 618. The area ratio is the comparison of the total contact area to the total area of the power module 100. In one aspect, the area of the power module 100 can be the area of the base plate 602. In one aspect, the area of the power module 100 can be the area of one or more power substrates 606. In one aspect, the area of the power module 100 can be the area between the housing sidewalls 612. In one aspect, the area of the power module 100 can be the area of the housing lid 618. The base ratio is the comparison of the total contact base width to the width of the power module 100. The base ratio assumes that there is a solder fillet at the periphery of the base. In one aspect, the width of the power module 100 can be the width of the base plate 602.In one aspect, the width of the power module 100 can be made the same as the width of one or more power substrates 606. In one aspect, the width of the power module 100 can be made the width between the housing side walls 612. In one aspect, the width of the power module 100 can be made the width of the housing lid 618. The table below shows a particular set of non-limiting specifications.

[0170]

Table 3

[0171] In one aspect, the power module 100 can have a terminal area ratio greater than 20%. In one aspect, the power module 100 can have a terminal area ratio greater than 25%. In one aspect, the power module 100 can have a terminal area ratio greater than 30%. In one aspect, the power module 100 can have a terminal area ratio in the range of 20% - 25%. In one aspect, the power module 100 can have a terminal area ratio in the range of 25% - 30%. In one aspect, the power module 100 can have a terminal area ratio in the range of 30% - 35%.

[0172] In one aspect, the power module 100 can have a base ratio in the range of 70% - 80%. In one aspect, the power module 100 can have a base ratio in the range of 80% - 90%. In one aspect, the power module 100 can have a base ratio in the range of 90% - 95%.

[0173] In various aspects, the base 636 can be configured such that the contact legs are "feather-shaped" or "finger-shaped". In some aspects, the split legs of the base 636 can provide more space for the solder to create a fillet around the sides of the connector, thereby adding strength in multiple directions and axes. The split base 636 can disperse stress and improve reliability.

[0174] By using the vertical offset 702 of the V+ and V- power contacts, the need for bends or offsets in the external busbar 900 can be reduced, thereby minimizing the total loop inductance of the system. In some embodiments, such a reduction in the complexity of the busbar 900 can also reduce costs. In one embodiment, the vertical offset 702 can be 3.25 mm (3 mm metal thickness, 0.25 mm laminate separation). In other embodiments, the vertical offset 702 can have a practical range of 2 mm to 3 mm, 3 mm to 4 mm, 4 mm to 5 mm, and 5 mm to 6 mm. The table below shows a specific set of non-limiting specifications.

[0175]

Table 4

[0176] Substrate parameters The power substrate 606 can also be configured so as to be wide and to be occupied as much as possible by the power device 302. Aspects of the present disclosure include a high device area / substrate area utilization rate. The spacing of the power devices 302 may be determined by processing design rules for optimizing heat dissipation, thermal performance, and manufacturability, and other similar ones. The power device ratio is a comparison of the active device area in comparison with the total width of the power substrate 606. In this regard, this width can be defined along an axis extending through the plurality of power devices 302 as shown in FIG. 11. A portion of the width of the power substrate 606 may be used for the overcurrent and temperature sensor 610. In some aspects, the percentage value of the power device ratio can be increased without including those features. In one aspect, the power module 100 can have an active device area greater than 60%. In one aspect, the power module 100 can have an active device area greater than 65%. In one aspect, the power module 100 can have an active device area greater than 70%. In one aspect, the power module 100 can have an active device area of 60% - 65%. In one aspect, the power module 100 can have an active device area of 65% - 70%. In one aspect, the power module 100 can have an active device area of 70% - 75%. The following table shows a specific set of non-limiting specifications.

[0177]

Table 5

[0178] In some embodiments, the metal thickness of the power substrate 606 can be configured as follows. In various embodiments, the metal thickness may be in a trade-off relationship with thermal performance, package resistance, cost, and other similar factors. In one embodiment, the metal thickness of the power substrate 606 can be made thinner than 0.5 mm. In one embodiment, the metal thickness of the power substrate 606 can be made thinner than 0.3 mm. In one embodiment, the metal thickness of the power substrate 606 can be 0.2 mm. In one embodiment, the metal thickness of the power substrate 606 can be in the ranges of 0.1 mm to 0.6 mm, 0.2 mm to 0.3 mm, 0.3 mm to 0.4 mm, 0.4 mm to 0.5 mm, and 0.5 mm to 0.6 mm.

[0179] Wire Bond Parameters The power wire bond 628 can be of any of the diameters listed in the table below. In one embodiment, an aluminum bond with a diameter of 12 mils (0.30 mm) can be utilized. In one embodiment, the diameter of the bond can be in the ranges of 0.15 mm to 0.25 mm, 0.2 mm to 0.3 mm, 0.25 mm to 0.35 mm, 0.35 mm to 0.45 mm, and 0.45 mm to 0.55 mm. In other embodiments, larger diameter aluminum bonds and larger diameter copper bonds can be utilized. In a further embodiment, a soldered copper tab can be utilized to maximize current capacity. In one embodiment, the diameter of the power wire bond 628 can be in the range of 0.15 mm to 0.6 mm. In one embodiment, the diameter of the power wire bond 628 can be in the range of 0.19 mm to 0.52 mm. In one embodiment, the diameter of the power wire bond 628 can be in the range of 0.2 mm to 0.51 mm. The table below shows a specific set of non-limiting specifications.

[0180]

Table 6

[0181] In one aspect, the power wire bond 628 can include aluminum wire bonds, aluminum ribbon bonds, copper wire bonds, copper ribbon bonds, copper solder tabs, copper sintered tabs, and other like ones, as shown in the table below.

[0182]

Table 7

[0183] In a particular aspect, the wire bond 628 can be configured to have loop shape dimensions as listed in the table below. In various aspects, the loop shape dimensions can be configured to be as low profile as possible and as short as possible in order to minimize resistance. The bond length is determined by the die placement of the power device 302 and the configuration of the power module 100. In one aspect, the wire bond length can have a range of 4 mm to 12 mm. In one aspect, the wire bond length can have a range of 5 mm to 11 mm. In one aspect, the loop height of the wire bond can have a range of 0.5 mm to 3 mm. In one aspect, the loop height of the wire bond can have a range of 1 mm to 2.5 mm. The table below shows a particular set of non-limiting specifications.

[0184]

Table 8

[0185] In one aspect, this configuration can utilize more bonds 628 or the maximum number of bonds 628 per power device 302. The number of bonds 628 can depend on the die size, pad area, and bond diameter. The table below shows a particular set of non-limiting specifications. Specifically, the values listed below are for different size embodiments of the MOSFET.

[0186]

Table 9

[0187] In one aspect, each power device 302 can be implemented to have 3 to 12 bonds 628. In one aspect, each power device 302 can be implemented to have 4 to 10 bonds 628. In one aspect, each power device 302 can be implemented to have 5 or more bonds 628. In one aspect, each power device 302 can be implemented to have 7 or more bonds 628. In one aspect, each power device 302 can be implemented to have 9 or more bonds 628. In one aspect, each power device 302 can be implemented to have 11 or more bonds 628.

[0188] Inductance and switching parameters The inductance of the power module 100 may be determined by the total loop length, cross-sectional area, flux cancellation, and other similar factors. In various aspects, the power module 100 can be configured to have a low profile using wide power contacts, and to minimize the inductance by achieving flux cancellation within the power module 100 when the loops overlap. The width of the power module 100 may also have a significant impact on the inductance.

[0189] The following table is based on a particular implementation of the power module 100 and shows the inductance and other simulation results for determining the inductance of other configurations. Assume that in the configuration with the lowest inductance, the power module 100 can also be made thinner (i.e., the previously mentioned 650V thickness). The maximum dV / dt is not a limit for the power module 100.

[0190] The di / dt value was calculated to reach the theoretical maximum assuming a 1200V device and an 800V bus. This could result in a possible overshoot of up to 400V. In this regard, this calculation assumed a bus loop inductance of 2nH added in series with the power module 100. Assuming this, one aspect of the following table lists the fastest that the power module 100 can switch.

[0191] In one or more aspects, losses were determined by testing a particular embodiment using very aggressive switching. In one aspect, this loss may have a range of 0.25 - 0.050 mJ / A, 0.25 - 0.040 mJ / A, and 0.25 - 0.035 mJ / A. The following table shows a particular set of non-limiting specifications.

[0192]

Table 10

[0193] In aspect 1, the total stray inductance value of the power module 100 can have a range of 9 (nH) - 11 (nH). In aspect 2, the total stray inductance value of the power module 100 can have a range of 6 (nH) - 7 (nH). In aspect 3, the total stray inductance value of the power module 100 can have a range of 3 (nH) - 4 (nH). In aspect 4, the total stray inductance value of the power module 100 can have a range of 2 (nH) - 3 (nH).

[0194] Figures 43 - 58 show a power module according to one aspect of the present disclosure.

[0195] In this regard, since the current density of the power device 302 and other components is high, the thermal performance of the power module 100 of FIGS. 43-58 can be configured to maximize heat flux, reduce system size, reduce cost, and achieve other similar things. Specifically, the power module 100 shown in FIGS. 43-58 can include any one or more of the aspects disclosed herein. Moreover, the power module 100 of FIGS. 43-58 can be further configured for direct cooling to maximize heat flux, reduce system size, reduce cost, and achieve other similar things. Further, when implementing direct cooling using the power module 100, the thermal interface between the power module 100 and the cold plate or heat sink, and any material or structure disposed between the top surface of the cold plate and the cooling fluid can be removed or eliminated. In this regard, prior art embodiments include a thermal interface material (TIM) disposed at the interface between the power module and the cold plate, and the use of TIM can cause problems related to adhesion to the surface, aging, pump-out, and other similar things. By directly cooling the surface of the base plate 602 of the power module 100, a larger amount of heat flux can be processed within the power module 100 and related structures.

[0196] In one aspect, the power module 100 can include a plurality of pin fins 642. In one aspect, the plurality of pin fins 642 can be configured to transfer heat from one or more components of the power module 100. In one aspect, the plurality of pin fins 642 can be configured to cool one or more components of the power module 100. In one aspect, the plurality of pin fins 642 can be configured to directly cool one or more components of the power module 100. In one aspect, in cooperation with the cold plate 902, the plurality of pin fins 642 can be configured to directly cool one or more components of the power module 100. In one aspect, the plurality of pin fins 642 can be configured to allow a coolant to pass between the pin fins 642.

[0197] In one aspect, the base plate 602 can include a plurality of pin fins 642. In one aspect, the plurality of pin fins 642 can be disposed on the surface of the base plate 602. In one aspect, the plurality of pin fins 642 can be disposed on the bottom surface of the base plate 602. In one aspect, the plurality of pin fins 642 can be disposed on the bottom surface of the base plate 602 on the side opposite to the housing side wall 612 of the base plate 602.

[0198] In one aspect, the plurality of pin fins 642 may form a channel parallel to the axis 654. In one aspect, the plurality of pin fins 642 may form a channel parallel to the axis 656. In one aspect, the plurality of pin fins 642 may form a zigzag channel with respect to the axis 654 or a channel oblique to the axis 654. In one aspect, the plurality of pin fins 642 may form a zigzag channel with respect to the axis 656 or a channel oblique to the axis 656.

[0199] The movement of the coolant around the plurality of pin fins 642, the heat transfer from the plurality of pin fins 642 to the coolant, the reduction of the surface layer and / or barrier layer adjacent to the plurality of pin fins 642 to increase heat transfer, and other similar things can be increased or promoted by configuring the arrangement of the plurality of pin fins 642 and the arrangement of the flow paths disposed between the plurality of pin fins 642.

[0200] Referring to FIGS. 46, 50, and 54, each of the pin fins 642 can be integrally formed with the base plate 602. In other embodiments, each pin fin 642 can be attached to the base plate 602 by welding, an adhesive, soldering, brazing, or other similar means. In one embodiment, each pin fin 642 can include a base 644 connected to the base plate 602.

[0201] In one embodiment, the pin fins 642 can be formed from the same material as the base plate 602. In one embodiment, the pin fins 642 can be formed from the same material as the base plate 602 to reduce weight. In one embodiment, the pin fins 642 can be formed from a material different from that of the base plate 602. In one embodiment, the pin fins 642 can be formed from a metallic material. In one embodiment, the pin fins 642 can include copper. In one embodiment, the pin fins 642 can be made of copper.

[0202] In one aspect, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, each pin fin 642 can have a terminating surface 648. In one aspect, the terminating surface can be a flat surface, a contoured surface, a non - flat surface, a pointed surface, a curved surface, or other similar surfaces. In one aspect, as one or more surfaces 646 extend to the terminating surface 648, one or more surfaces 646 may gradually narrow. In one aspect, when one or more surfaces 646 extend to the terminating surface 648, one or more surfaces 646 may be perpendicular to the surface of the base plate 602.

[0203] In one aspect, each pin fin 642 can have a cross - sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the pin fin 642 can have a square cross - sectional shape, a rectangular cross - sectional shape, a circular cross - sectional shape, a contoured cross - sectional shape, an elliptical cross - sectional shape, a symmetric cross - sectional shape (along one or more axes), an asymmetric cross - sectional shape (along one or more axes), an airfoil cross - sectional shape, a wing cross - sectional shape, or other similar cross - sectional shapes. Further, the pin fin 642 can have a first shape of the above - mentioned shapes, a plurality of the above - mentioned shapes, or other similar shapes. However, the pin fin 642 can be implemented by a structure of any shape on the base plate 602 of the power module 100.

[0204] In one aspect, the terminating surface 648 can have a cross - sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the terminating surface 648 can have a square cross - sectional shape, a rectangular cross - sectional shape, a circular cross - sectional shape, a contoured cross - sectional shape, an elliptical cross - sectional shape, a symmetric cross - sectional shape (along one or more axes), an asymmetric cross - sectional shape (along one or more axes), an airfoil cross - sectional shape, a wing cross - sectional shape, or other similar cross - sectional shapes.

[0205] In one aspect, the base 644 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the base 644 can have a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetric cross-sectional shape (along one or more axes), an asymmetric cross-sectional shape (along one or more axes), an airfoil cross-sectional shape, an airfoil cross-sectional shape, or other similar cross-sectional shapes.

[0206] In one aspect, the base 644 can have the same cross-sectional shape as the cross-sectional shape of the end face 648. In one aspect, the base 644 can have the same cross-sectional shape and size as the end face 648. In one aspect, the base 644 can have the same cross-sectional shape as the end face 648 and a different size. In one aspect, the base 644 can have a cross-sectional shape different from the cross-sectional shape of the end face 648.

[0207] In one aspect, the pin fin 642 can be formed using one or more operations including machining, forging, shaping, stamping, deformation, and other similar operations to form the fin pattern of the pin fin 642 shown in the drawing, and the pin fin 642 can also be attached using welding, adhesives, soldering, brazing, or other similar methods. However, the pin fin 642 can be formed using any manufacturing method and / or manufacturing technique known to those skilled in the art for generating a fin surface and a pin surface on the base plate 602.

[0208] Referring to FIG. 46, in one aspect, the diameter or length L of the pin fin 642 along the base 644, defined parallel to the surface of the base plate 602, can be 1 mm to 8 mm, 1 mm to 2 mm, 2 mm to 3 mm, 3 mm to 4 mm, 4 mm to 5 mm, 5 mm to 6 mm, 6 mm to 7 mm, or 7 mm to 8 mm. These dimensions may be equally applicable to all configurations of the pin fin 642 disclosed herein.

[0209] Referring to FIG. 46, in one aspect, the height H of the pin fin 642 from the base 644 to the end face 648, defined perpendicular to the surface of the base plate 602, can be 1 mm to 12 mm, 2 mm to 10 mm, 4 mm to 8 mm, 1 mm to 2 mm, 2 mm to 3 mm, 3 mm to 4 mm, 4 mm to 5 mm, 5 mm to 6 mm, 6 mm to 7 mm, 7 mm to 8 mm, 8 mm to 9 mm, 9 mm to 10 mm, 10 mm to 11 mm, or 11 mm to 12 mm. These dimensions may be equally applicable to all configurations of the pin fin 642 disclosed herein.

[0210] Referring to FIG. 46, in one aspect, the pin pitch S of the pin fin 642 can be defined by the central axis perpendicular to the base plate 602 of adjacent pin fins 642, and the interval S can be 2 mm to 12 mm, 4 mm to 10 mm, 2 mm to 3 mm, 3 mm to 4 mm, 4 mm to 5 mm, 5 mm to 6 mm, 6 mm to 7 mm, 7 mm to 8 mm, 8 mm to 9 mm, 9 mm to 10 mm, 10 mm to 11 mm, or 11 mm to 12 mm. These dimensions may be equally applicable to all configurations of the pin fin 642 disclosed herein.

[0211] FIG. 43 is a perspective bottom view of a power module according to one aspect of the present disclosure, FIG. 44 is a side view of the power module according to FIG. 43, FIG. 45 is a bottom view of the power module according to FIG. 43, and FIG. 46 is a partial perspective bottom view of the power module according to FIG. 43.

[0212] Referring to FIGS. 43 to 46, each of the pin fins 642 can include one or more surfaces 646 extending from the base 644. In one aspect, the pin fin 642 can have an end face 648. In one aspect, the end face can be a contoured surface, a non-planar surface, or other similar surfaces. In one aspect, as one or more surfaces 646 extend to the end face 648, one or more surfaces 646 may gradually become narrower.

[0213] In one aspect, the end face 648 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the end face 648 can have an asymmetric cross-sectional shape, an airfoil cross-sectional shape, an airfoil cross-sectional shape, or other similar cross-sectional shapes.

[0214] In one aspect, the base 644 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the base 644 can have a square cross-sectional shape, a rectangular cross-sectional shape, or other similar cross-sectional shapes.

[0215] In one aspect, the plurality of pin fins 642 may form a flow path parallel to the axis 654. In one aspect, the plurality of pin fins 642 may form a flow path parallel to the axis 656.

[0216] FIG. 47 is a perspective bottom view of a power module according to one aspect of the present disclosure, FIG. 48 is a side view of the power module according to FIG. 47, FIG. 49 is a bottom view of the power module according to FIG. 47, and FIG. 50 is a partial perspective bottom view of the power module according to FIG. 47.

[0217] Referring to FIGS. 47 to 50, each of the pin fins 642 can include one or more surfaces 646 extending from the base 644. In one aspect, each of the pin fins 642 can have an end face 648. In one aspect, the end face can be a flat surface or other similar surface. In one aspect, as one or more surfaces 646 extend to the end face 648, one or more surfaces 646 may gradually become narrower.

[0218] In one aspect, the end face 648 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the end face 648 can have a circular cross-sectional shape, a contour cross-sectional shape, an elliptical cross-sectional shape, a symmetric cross-sectional shape, or other similar cross-sectional shapes.

[0219] In one aspect, the base 644 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the base 644 can have a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetric cross-sectional shape, or other similar cross-sectional shapes.

[0220] In one aspect, the base 644 can have the same cross-sectional shape as the cross-sectional shape of the end face 648. In one aspect, the base 644 can have the same cross-sectional shape as the end face 648 and a different size.

[0221] In one aspect, the plurality of pin fins 642 may form a flow path parallel to the axis 654. In one aspect, the plurality of pin fins 642 may form a flow path parallel to the axis 656. In one aspect, the bases 644 of adjacent pin fins 642 may meet at a point, may be joined, may be connected, may be in contact, or may be in other similar positions.

[0222] FIG. 51 shows a perspective bottom view of a power module according to one aspect of the present disclosure, FIG. 52 shows a side view of the power module according to FIG. 51, FIG. 53 shows a bottom view of the power module according to FIG. 51, and FIG. 54 shows a partial perspective bottom view of the power module according to FIG. 51.

[0223] Referring to FIGS. 51-54, each of the pin fins 642 can include one or more surfaces 646 extending from the base 644. In one aspect, each of the pin fins 642 can have an end face 648. In one aspect, the end face can be a planar or other similar surface. In one aspect, as one or more surfaces 646 extend to the end face 648, one or more surfaces 646 may gradually narrow.

[0224] In one aspect, the end face 648 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the end face 648 can have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetric cross-sectional shape, or other similar cross-sectional shapes.

[0225] In one aspect, the base 644 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the base 644 can have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetric cross-sectional shape, or other similar cross-sectional shapes.

[0226] In one aspect, the base 644 can have the same cross-sectional shape as the cross-sectional shape of the end face 648. In one aspect, the base 644 can have the same cross-sectional shape as the end face 648 and a different size.

[0227] In one aspect, the plurality of pin fins 642 may form a flow path parallel to the axis 654. In one aspect, the plurality of pin fins 642 may form a flow path parallel to the axis 656.

[0228] FIG. 55 shows a perspective bottom view of a power module according to one aspect of the present disclosure, FIG. 56 shows a side view of the power module according to FIG. 55, and FIG. 57 shows a bottom view of the power module according to FIG. 55.

[0229] Referring to FIGS. 55 to 57, each of the pin fins 642 can include one or more surfaces 646 extending from the base 644. In one aspect, each of the pin fins 642 can have an end face 648. In one aspect, the end face can be a flat surface or other similar surface. In one aspect, as one or more surfaces 646 extend to the end face 648, one or more surfaces 646 may gradually become narrower.

[0230] In one aspect, the end face 648 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the end face 648 can have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetric cross-sectional shape, or other similar cross-sectional shapes.

[0231] In one aspect, the base 644 can have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the base 644 can have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetric cross-sectional shape, or other similar cross-sectional shapes.

[0232] In one aspect, the base 644 can have the same cross-sectional shape as the cross-sectional shape of the end face 648. In one aspect, the base 644 can have the same cross-sectional shape and size as the end face 648.

[0233] In one aspect, the plurality of pin fins 642 may form a zigzag flow path with respect to the axis 654 or an inclined flow path with respect to the axis 654. In one aspect, the plurality of pin fins 642 may form a zigzag flow path with respect to the axis 656 or an inclined flow path with respect to the axis 656.

[0234] FIG. 58 shows a perspective view of a power module embodiment according to one aspect of the present disclosure.

[0235] Referring to FIG. 58, the power module 100 implementing direct cooling using the pin fins 642 can be placed on and / or within the cold plate 902. Specifically, FIG. 58 shows one power module 100 of the power modules 100 implementing direct cooling using the disclosed pin fins 642. In this regard, the embodiment of FIG. 58 can include one power module 100, a plurality of power modules 100, or all of the power modules 100 of the power modules 100 implementing direct cooling using the disclosed pin fins 642. In one aspect, the power modules 100 can be placed on both sides of the cold plate 902. In this regard, the power modules 100 disposed on both sides of the cold plate 902 can achieve maximizing the power density, reducing the complexity, and / or other similar things. In one aspect, the power module 100 can be placed on one side of the cold plate 902. Thereby, the power module 100 can be directly cooled using the pin fins 642, the cold plate 902, and other similar things. As further described herein, the directly cooled power module 100 can exhibit quite high thermal performance.

[0236] In one aspect, the cold plate 902 can accommodate any number of power modules 100 arranged in a row on the top surface of the cold plate 902 and the bottom surface of the cold plate 902 according to the desired topology. In one aspect, the cold plate 902 can accommodate any number of power modules 100 arranged in a row on one side of the cold plate 902 according to the desired topology. In this regard, the cold plate 902 can be made longer or shorter to match the number of power modules 100.

[0237] As further shown in FIG. 58, a seal 908 can be disposed between the power module 100 and the cold plate 902. The seal 908 can be an O-ring, gasket, and / or other similar ones. In some embodiments, the seal 908 can be made of epoxy resin, RTV silicone (room temperature vulcanizing silicone), similar sealing materials, and / or other similar ones. In other embodiments, the seal 908 can be formed by directly welding, brazing, or attaching the base plate 602 to the cold plate 902 by other similar methods.

[0238] In one embodiment, the cold plate 902 can have a fluid connection tube 3516, and the fluid connection tube 3516 can be configured to receive a cooling fluid source for cooling purposes associated with the cold plate 902 and / or to deliver cooling fluid for cooling purposes associated with the cold plate 902. In one embodiment, the fluid connection tube 3516 can include threaded fittings, flanged fittings, quick connect fittings, hose barb fittings, soldered tubes, welded tubes, and other similar ones. In one embodiment, the cold plate 902 can have an inlet port, an outlet port, a fluid flow path, and / or other similar ones, which can be configured to uniformly distribute the fluid flow to the power module 100. For mounting the cold plate 902 assembly itself to another structure in applications such as inverters, converters, or other similar ones, the cold plate 902 can further include other considerations for mounting and sealing the power module 100.

[0239] In one aspect, the power module 100 of FIGS. 43 - 58 can be inserted into, implemented with, configured with, or otherwise implemented with an application. This application may be a system for implementing the power module 100 of FIGS. 43 - 58. This application may be a power system, a motor system, an automotive motor system, a charging system, an automotive charging system, a vehicle system, an industrial motor drive, an embedded motor drive, an uninterruptible power supply, an AC - DC power supply, a welding machine power supply, a military system, an inverter, an inverter for a wind turbine, a solar power panel, a tidal power generation plant, and an electric vehicle (EV), a converter, and other similar ones.

[0240] FIG. 59 shows a perspective view of a power module embodiment according to one aspect of the present disclosure.

[0241] Specifically, FIG. 59 shows an inverter 990 that can be implemented as a three - phase inverter. In various aspects, the inverter 990 can be configured as two separate three - phase inverters, one three - phase inverter, one full - bridge, one half - bridge, and / or other similar ones. In one aspect, the inverter 990 can be configured to include six dedicated half - bridges. In one aspect, the above configuration can be built and arranged to include the external connections of the inverter 990. In one aspect, the above configuration can include different versions of the power module 100 and / or other assembly components. However, the various features described herein with respect to FIG. 59 can be implemented in any of the applications described herein. Referring further to FIG. 59, the inverter 990 can include the phase outputs 930, sensors 980, capacitors 102, cold plates 902, fluid connection tubes 3516, PCBs 936, busbars 900, and other similar ones, which are described in detail herein.

[0242] In one aspect, the phase output 930 can be formed by stamping, laser cutting, or other similar techniques. In one aspect, the phase output 930 can be formed of metal, which may include copper, may be copper, and / or may include other metals. In one aspect, the phase output 930 can include a bend to optimize its size. In one aspect, the phase output 930 can include an L-shaped bend to optimize its size. In one aspect, the phase output 930 can include a 90° bend to optimize its size. In one aspect, the phase output 930 can include a threaded hole for housing mounting, strain relief, and other similar purposes.

[0243] In one aspect, the sensor 980 can include current sensing for each output terminal of the phase output 930. In one aspect, the sensor 980 can be configured to operate with a closed-loop system to address signal quality and other similar issues. In other aspects, the inverter 990 can operate in an open loop to reduce cost and size.

[0244] In one aspect, a signal conditioning PCB 936 can be implemented. In one aspect, an interconnection PCB 936 can be implemented. In one aspect, a signal conditioning and interconnection PCB 936 can be implemented.

[0245] In one aspect, the capacitor 102 can be configured as a rectangular block to enable better space utilization. In one aspect, the capacitor 102 can be configured to connect the power module 100 to the capacitor 102 as described herein, together with the integrated busbar 900. In one aspect, the capacitor 102 can be a polypropylene film capacitor.

[0246] Figure 60 shows a perspective view of the power module embodiment according to Figure 59.

[0247] FIG. 60 further shows the inverter 990 together with a number of housing components 992. In one aspect, the number of housing components 992 can include components such as sheet metal parts, vents 984, powder coating, a solid front for EMI countermeasures and welded edges, snap-in covers 988, synthetic material parts, plastic material parts, handles 986, grounding parts, standoffs, cooling port openings, embossed terminal markings, windows for displaying components such as controllers, and other similar ones.

[0248] In one aspect, the snap-in cover 988 can include a synthetic material such as plastic. In one aspect, the snap-in cover 988 can be a molded product. In one aspect, in order to facilitate connection, the snap-in cover 988 can include a captive fastener portion. For example, the snap-in cover 988 can include a captive hexagonal nut to facilitate connection. In one aspect, the inverter 990 can include various replacements and / or configurations of the phase output 930 and the snap-in cover 988, and these configurations can be incorporated into the inverter 990.

[0249] FIG. 61 shows a graph plotting the junction temperature against the output current for two different power modules.

[0250] Referring to FIG. 61. Two versions of the power module were tested. The first version of the power module was implemented as a 1200V half-bridge power module with a maximum case temperature rating of 125°C (Celsius). The drain-source on-state resistance of this power module was 4.6 mΩ (milliohm) at a maximum junction temperature of 175°C. This power module was implemented to have a planar copper base plate mounting surface.

[0251] The second version of the power module utilizes the same power device 302 and implements a direct-cooled copper pin fin baseplate with pin fins 642 disposed on baseplate 602 as disclosed herein with reference to FIGS. 43 - 58 and the related description.

[0252] In the planar baseplate version of the power module, it was necessary to apply a thermal interface material (TIM) between the power module and the heat sink or cold plate to fill the voids in the heat path. The effect of this TIM provided additional thermal impedance between the power module case and the cold plate. The direct-cooled power module includes pin fins 642 disclosed herein with reference to FIGS. 43 - 58 and the related description and is designed to contact the coolant directly, negating the need for TIM.

[0253] As a result, when using the direct-cooled power module disclosed herein with reference to FIGS. 43 - 58 and the related description, the thermal impedance was reduced compared to the planar baseplate power module. For the planar baseplate version of the power module, this test was performed using a custom micro deformation liquid-cooled cold plate at a coolant temperature of 25°C and a high-performance TIM. The maximum power dissipation was measured to be 750 W per switch position.

[0254] For the direct-cooled version of the power module disclosed herein with reference to FIGS. 43 - 58 and the related description, this test was performed using a cold plate 902 having internal coolant channels and machined cavities and a gasket seal to prevent leakage. The machined cavities include a baseplate 602 seated inside and allow the coolant to pass through between the pin fins 642. The maximum power dissipation was measured to be 1000 W per switch position. For both tests, the junction temperature was monitored using a thermal camera and the virtual junction technique.

[0255] To demonstrate the performance advantages of the direct-cooled power module 100 at the system level disclosed in this specification with reference to FIGS. 43 to 58 and related descriptions, these power modules were installed in a three-phase inverter and tested under application conditions. Using an 800V DC bus, a switching frequency of 20 kHz, a three-phase load, and a constant coolant temperature of 25°C.

[0256]

[0255] After applying this DC bus voltage to the inverter, the output current of the inverter was slowly increased, during which the temperature sensors incorporated in the power module were monitored. By testing a specially constructed power module without a lid to enable thermal imaging of the power device, the temperature sensor measurements were correlated with the junction temperature.

[0257] As shown in FIG. 61, the planar base plate version of the power module implemented in the inverter was found to handle up to 410 A RMS (ampere-square mean), while the direct-cooled version of the power module 100 of the present disclosure was found to handle 490 A RMS

[0256] Thus, the power module 100 implementing the pin fins 642 according to FIGS. 43 to 58 and related descriptions corresponded to a 20% increase in the output current capacity.

[0258] The power module 100 related to FIGS. 43 to 58 can be implemented to have different voltages, temperature ratings, on-state resistances, different maximum junction temperatures, different coolant temperatures, different switching frequencies, and other similar ones. Similarly, it should be noted that the output current capacity is increased compared to a non-direct-cooling power module. In this regard, the output current capacity can be increased by 5% to 40%, 5% to 10%, 10% to 15%, 15% to 20%, 20% to 25%, 25% to 30%, 30% to 35%, 35% to 40%, 10% to 30%, 20% to 40%, 15% to 35%, or 15% to 40% compared to a non-direct-cooling power module. In this regard, the output current capacity can be increased by at least 5%, 10%, 15%, 20%, 25%, 30%, 35%, or 40% compared to a non-direct-cooling power module. Further, numerous other performance improvements are contemplated by the power module 100 related to FIGS. 43 to 58 implemented as described herein.

[0259] In one or more aspects of the present disclosure, the power module 100 can be implemented within a high-performance and compact modular three-phase inverter that is particularly optimized to fully utilize silicon carbide (SiC) MOSFETs. In some aspects, the inverter is configured as a dual inverter or a single inverter, enabling a modular AC output. In some aspects, a double-sided cold plate, a custom capacitor, and a direct-cooling SiC module can enable a very high power density for this inverter. It has been confirmed that the parasitic elements of all critical components including the power module 100 and the capacitor guarantee the lowest total stray inductance. In some aspects, this unit can operate under application conditions using an 800V DC bus and a 480V / 830A phase current.

[0260] In this regard, conventional power packages are an effective and well-accepted industrial solution for current state-of-the-art silicon (Si) IGBTs. However, conventional power packages are unable to fully utilize the advantages offered by SiC-based technologies. The footprint and internal layout of conventional power packages are inherently designed for Si devices. Si devices typically have single or a few paralleled large devices, in which the signal network follows a long path. The bipolarity of the IGBT limits the switching speed in such a way that the above-mentioned design trade-offs are tolerated.

[0261] To fully utilize the high-performance attributes of SiC devices, a technology-centric design has been applied in relation to the disclosed power module 100. The power module 100 of the present disclosure addresses the shortcomings of existing module designs. In this regard, the SiC-centric design of the present disclosure enables a larger number of smaller dies to be arranged in parallel such that those dies share the dynamic current uniformly, and optimizes the signal network by short-path parallel planes such that the SiC dies switch uniformly even at high speeds.

[0262] To meet these needs, the disclosed power module 100 is highly optimized to achieve maximum performance from all sizes of commercially available 650 - 1700V SiC MOSFETs. Some aspects of the disclosed power module 100 provide the ability to carry high currents (300 - >600A) with a small footprint (53mm x 80mm) and have a terminal arrangement that allows for straight bushing and interconnection. The evenly matched low inductance layout of the disclosed power module 100 results in high quality switching events and minimizes internal and external vibrations of the power module 100. In some embodiments, the disclosed power module 100 can have a stray inductance of about 6.7nH and an area of only about 60% of a 62mm module. The disclosed current loops of the power module 100 are designed to be wide, low profile, and evenly distributed among the devices such that each of those current loops has equal impedance across the switch positions. The power terminals can be vertically offset so that the busbar between the DC link capacitor and the power module 100 can be stacked all the way up to the power module 100 without the need for bends, coinings, standoffs, or complex separations. Ultimately, this achieves low inductance throughout the entire power loop from the DC link capacitor and the SiC devices.

[0263] Due to the high current density of the SiC power device, the thermal performance of the power module 100 and the cold plate enables maximizing the heat flux and reducing the system size and cost. The disclosed direct-cooled power module can implement a copper pin fin base plate with thermal performance exceeding that of existing planar base plate power modules. In a planar base plate power module, it is necessary to apply a thermal interface material (TIM) between the power module and the heat sink or cold plate to fill the voids in the heat path. The effect of this TIM is an additional thermal impedance between the module case and the cold plate. The direct-cooled power module 100 has pins designed to be in direct contact with the coolant, which negates the need for TIM. As shown in FIG. 61, the planar base plate version of the power module can handle up to 410 A RMS while the direct-cooled version of the power module 100 can handle 490 A RMS . This corresponds to a 20% increase in the output current capacity.

[0264] In some aspects, the disclosed power module 100 can be implemented in an inverter design that adds to the number of power modules 100 with a unique double-sided cold and low parasitic, high-performance same design. In one aspect, a double-sided cold plate can be utilized that features cooling surfaces on the top and bottom that enable doubling the number of power modules 100 in the same footprint area, which, when used with the direct-cooled power module 100 of the present disclosure, provides a power density more than double that of prior art embodiments. In some aspects, a custom DC link capacitor can be implemented to have the integrated stacked terminals disclosed herein that are directly attached to both the top bank and bottom bank of the power module. This design has a low stray inductance between the power module 100 and the capacitor and eliminates the need for separate busbars. The non-planar power module 100 of the present disclosure enables the capacitor terminal assembly to have no bends, which reduces cost and maximizes overlap. These DC input terminals can be incorporated into the capacitor, thereby creating a tightly integrated solution for interconnecting six half-bridge modules.

[0265] In some aspects, the disclosed power module 100 can be supported by a gate driver with a high noise margin and fast protection to effectively switch the device and provide maximum survivability under fault conditions.

[0266] In some aspects, the AC output terminals can be designed and implemented as a modular subassembly. This enables the inverter to be configured as a dual three-phase inverter with an output of 430 A RMS or more and six or more current sensors, or as a single three-phase inverter with an output current of 860 A RMS or more and three or more current sensors.

[0267] The disclosed double-sided cold plate assembly can be implemented with the direct-cooled power module 100 described herein mounted on the top and bottom surfaces using gasket seals, as well as an inverter including sensors, modules, cold plates, and capacitors.

[0268] To confirm the high performance of the system, components were evaluated in both the frequency domain and the time domain. In some aspects, small-signal parasitic extraction enables accurate measurement of parasitic elements that can be utilized in an iterative design process to minimize stray inductance. The quality of the switching waveforms for both overshoot voltage and ringing was confirmed for each power module by double-pulse testing at 800V and 600A for the modules and DC link capacitors. In some aspects, a DC link capacitor design can be implemented that balances current density and has an optimal terminal spacing and layout to minimize stray inductance.

[0269] Accordingly, the present disclosure describes a power module 100 and related systems configured to address heat and increase output current capacity, with an improved power module 100 and related systems compared to power modules that are not direct-cooled. Further, the disclosed power module 100 can be implemented in numerous topologies including half-bridge configurations, full-bridge configurations, common-source configurations, common-drain configurations, neutral-point-clamped configurations, three-phase configurations, and other like configurations. The applications of the power module 100 can include power systems, motor systems, automotive motor systems, charging systems, automotive charging systems, vehicle systems, industrial motor drives, embedded motor drives, uninterruptible power supplies, AC-DC power supplies, welding machine power supplies, military systems, inverters for wind turbines, solar power panels, tidal power generation, and electric vehicles (EVs), converters, and other like ones.

[0270] In response, the present disclosure further describes an improved power module 100 and related systems configured to address parasitic impedances such as loop inductance to increase stability, reduce switching losses, reduce EMI, and limit stress on system components. Specifically, the disclosed power module, with the disclosed arrangement, has the ability to reduce inductance, and in some embodiments, the ability to reduce inductance by up to 10%. Further, the disclosed power module 100 can be implemented in a number of topologies including half-bridge configurations, full-bridge configurations, common-source configurations, common-drain configurations, neutral-point-clamped configurations, and three-phase configurations. The uses of the power module 100 include motor drives, solar inverters, circuit breakers, protection circuits, DC-DC converters, and other like applications.

[0271] The power module 100 of the present disclosure is adaptable to the power processing needs specific to a given application and to most systems within size and weight limitations. The power module designs and system-level architectures described in the present disclosure enable a high level of power density and volume utilization to be achieved.

[0272] Above, aspects of the present disclosure have been described with reference to the accompanying drawings in which the aspects of the present disclosure are shown. However, it is understood that the present disclosure can be implemented in many different forms and should not be construed as limited to the aspects described above. Rather, these aspects are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. Further, the various aspects described can be implemented separately. Still further, one or more of the various aspects described can be combined. Throughout, like reference numerals refer to like elements.

[0273] Throughout this specification, terms such as first, second, etc. are used to describe various elements, but it is understood that these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, without departing from the scope of the present disclosure, the first element may be referred to as the second element, and similarly, the second element may be referred to as the first element. The term "and / or" includes any combination of one or more of the listed related items.

[0274] The terms used in this specification are for the purpose of describing particular aspects only and are not intended to limit the present disclosure. Unless the context clearly indicates otherwise, when used in this specification, the singular forms "a", "an", and "the" are intended to include the plural forms. As used in this specification, the terms "comprises", "comprising", "includes", and / or "including" specify the presence of the stated feature, integer, step, operation, element, and / or component, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups thereof.

[0275] When an element such as a layer, region, or substrate is described as being "on" or extending "onto" another element, it is understood that the element may be directly on or extend directly onto the other element, or there may be intervening elements. Conversely, when an element is described as being "directly on" or extending "directly onto" another element, there are no intervening elements. Also, when an element is described as being "connected" or "coupled" to another element, it is understood that the element may be directly connected or directly coupled to the other element, or there may be intervening elements. Conversely, when an element is described as being "directly connected" or "directly coupled" to another element, there are no intervening elements.

[0276] In this specification, relative terms such as "below" or "above" or "upper" or "lower" or "top" or "bottom" may be used to describe the relationship of one element, layer, or region shown in the figures to another element, layer, or region. It is understood that these terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures.

[0277] In this specification, aspects of the present disclosure are described with reference to cross-sectional views that are schematic illustrations of idealized embodiments (and intermediate structures) of the present disclosure. For clarity, the thicknesses of layers and regions in the drawings may be exaggerated. Further, variations from the illustrated shapes are to be expected, for example as a result of manufacturing techniques and / or fabrication tolerances.

[0278] The drawings and the specification disclose typical aspects of the present disclosure. Specific terms are used, but they are used only in a general descriptive sense and not for purposes of limitation. The scope of the present disclosure is set forth in the following claims.

[0279] Aspects of the present disclosure can be implemented within any type of computing device having a wired / wireless communication function via a communication channel, such as, for example, a desktop computer, a personal computer, a laptop / mobile computer, a personal digital assistant (PDA), a mobile phone, a tablet computer, a cloud computing device, and other similar ones.

[0280] Furthermore, according to various aspects of the present disclosure, the methods described herein are intended to function by dedicated hardware implementations constructed to perform the methods described herein, including but not limited to PCs, PDAs, semiconductors, application specific integrated circuits (ASICs), programmable logic arrays, cloud computing devices, and other hardware devices.

[0281] It should also be noted that the software implementations of the present disclosure described herein may be stored on a tangible storage medium, such as a magnetic medium such as a disk or tape, a magneto-optical or optical medium such as a disk, or a solid state medium such as a memory card or other package, containing one or more read-only (non-volatile) memories, random access memories, or other rewritable (volatile) memories. A digital attachment file of an email, or other independent information archive or set of archives, is considered a distribution medium equivalent to a tangible storage medium. Accordingly, the present disclosure is considered to include the tangible storage medium or distribution medium listed herein on which the software implementations of this specification are stored, as well as equivalents and successor media recognized in the art.

[0282] Furthermore, various aspects of the present disclosure can also be implemented in non-general computer-implemented manners. Further, as is apparent from the disclosure herein, the various aspects of the present disclosure described herein improve the functionality of the system. Further, the various aspects of the present disclosure include computer hardware specifically programmed to solve the complex problems addressed by the present disclosure. Accordingly, the various aspects of the present disclosure overall improve the functionality of the system in its particular implementations defined by the claims, which execute the methods described by the present disclosure.

[0283] Although the invention has been described with respect to exemplary aspects, those skilled in the art will understand that the present disclosure can be practiced with modifications that come within the spirit and scope of the appended claims. These examples shown above are for illustrative purposes only and are not intended to be an exhaustive list of all possible designs, aspects, uses or modifications of the present disclosure. In this regard, it is contemplated that various aspects, features, components, elements, modules, arrangements, circuits and other like things are interchangeable, mixable, alignable, combinable and other like things with each other. In this regard, the various features of the present disclosure are modules and can be mixed with and aligned with each other.

Claims

1. at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; a gate-source board electrically connected to the plurality of power devices; a temperature sensor disposed within the housing, the temperature sensor being electrically connected to the gate-source board; Equipped with the temperature sensor is on a portion of the at least one power board; Power module.

2. the at least one power substrate having a metallic and / or conductive surface supporting the plurality of power devices; the portion of the at least one power substrate does not include the metallic surface and / or the conductive surface; the temperature sensor is on the portion of the at least one power substrate that does not include the metallic surface and / or the conductive surface. The power module according to claim 1 .

3. 2. The power module of claim 1, wherein the gate-source board further comprises a plurality of resistors, each resistor of the plurality of resistors electrically connected to a power device of the plurality of power devices, and the gate-source board configured to receive at least one electrical signal.

4. 3. The power module of claim 2, wherein each resistor of the plurality of resistors is electrically connected to a gate of one power device of the plurality of power devices.

5. The power module of claim 2 , wherein each resistor of the plurality of resistors is electrically connected to a source of one of the plurality of power devices.

6. 3. The power module of claim 2, wherein the at least one electrical signal comprises one of a gate driver signal and a source Kelvin signal.

7. the first terminal includes a contact surface located at a first height above the housing; the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height; The power module according to claim 1 .

8. A structure comprising the power module according to claim 1, at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor; a component housing configured to receive and enclose the power module and the at least one component; The structure further comprising:

9. 9. The structure of claim 8, further comprising an electrical interface configured to be connected to at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor and configured to exchange data with the at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor.

10. 10. The structure of claim 8 configured to test an embodiment of the power module for a particular application.

11. The arrangement of claim 8 , further comprising a cooling fan configured to move air through the arrangement housing.

12. 2. The power module of claim 1, wherein the total stray inductance value of the critical power switching loop of the power module comprises a range of 12 (nH) to 2 (nH).

13. 13. A system comprising the power module of claim 1, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power supply.

14. at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; a gate-source board configured to receive at least one electrical signal; Equipped with the gate-source board further comprising a plurality of resistors, each resistor of the plurality of resistors electrically connected to a power device of the plurality of power devices; each resistor of the plurality of resistors is electrically connected to one of a gate of a power device of the plurality of power devices and a source of a power device of the plurality of power devices; Power module.

15. 15. The power module of claim 14, wherein each resistor of the plurality of resistors is electrically connected to the gate of one power device of the plurality of power devices.

16. The power module of claim 14 , wherein each resistor of the plurality of resistors is electrically connected to the source of one power device of the plurality of power devices.

17. The power module of claim 14 , wherein the at least one electrical signal comprises a gate driver signal.

18. The power module of claim 14 , wherein the at least one electrical signal comprises a source Kelvin signal.

19. 15. The power module of claim 14, further comprising a temperature sensor disposed within the housing, the temperature sensor electrically connected to the gate-source board.

20. the at least one power substrate having a metallic and / or conductive surface supporting the plurality of power devices; the at least one power substrate includes a portion that does not include the metal surface and / or the conductive surface; the temperature sensor is on the portion of the at least one power substrate that does not include the metallic surface and / or the conductive surface.

20. The power module of claim 19.

21. the first terminal includes a contact surface located at a first height above the housing; the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height; 15. The power module according to claim 14.

22. 15. A system comprising the power module of claim 14, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power supply.

23. A structure comprising the power module of claim 14, at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor; a component housing configured to receive and enclose the power module and the at least one component; The structure further comprising:

24. 24. The structure of claim 23, further comprising an electrical interface configured to be connected to at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor and configured to exchange data with the at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor.

25. 24. The structure of claim 23 configured to test an embodiment of the power module for a particular application.

26. 24. The arrangement of claim 23, further comprising a cooling fan configured to move air through the arrangement housing.

27. 15. The power module of claim 14, wherein the total stray inductance value of the critical power switching loop of the power module comprises a range of 12 (nH) to 2 (nH).

28. 1. A method of configuring a power module, comprising: providing at least one power substrate; disposing a housing on the at least one power board; electrically connecting a first terminal to the at least one power board; providing a second terminal; electrically connecting a third terminal to the at least one power board; electrically connecting a plurality of power devices to the at least one power substrate; providing a gate-source board electrically connected to the plurality of power devices; and disposing a temperature sensor within said housing and electrically connecting said temperature sensor to said gate-source board; Including, the temperature sensor is on a portion of the at least one power board; method.

29. the at least one power substrate having a metallic and / or conductive surface supporting the plurality of power devices; the portion of the at least one power substrate does not include the metallic surface and / or the conductive surface; the temperature sensor is on the portion of the at least one power substrate that does not include the metallic surface and / or the conductive surface.

30. The method of claim 28.

30. mounting a gate-source board to receive at least one electrical signal; and disposing a plurality of resistors together with said gate-source board; each resistor of the plurality of resistors is electrically connected to one power device of the plurality of power devices.

30. The method of claim 28.

31. 30. The method of claim 29, wherein the at least one electrical signal comprises one of a gate driver signal and a source Kelvin signal.

32. 30. The method of claim 29, further comprising electrically connecting each resistor of the plurality of resistors to a gate of a power device of the plurality of power devices.

33. 30. The method of claim 29, further comprising electrically connecting each resistor of the plurality of resistors to a source of a power device of the plurality of power devices.

34. disposing a contact surface of the first terminal at a first height above the housing; and disposing a contact surface of the second terminal at a second height above the housing and different from the first height; 30. The method of claim 28, further comprising:

35. implementing a construction comprising said power module; providing at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor; disposing a component housing to receive and enclose said power module and said at least one component; 30. The method of claim 28, further comprising:

36. 36. The method of claim 35, further comprising: connecting an electrical interface to at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor; and exchanging data with the at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor through the electrical interface.

37. 36. The method of claim 35, further comprising testing an embodiment of the power module for a particular application using the configuration.

38. 36. The method of claim 35, further comprising moving air through the component housing with a cooling fan.

39. 1. A method of configuring and testing a power module, comprising: Providing a power module; Implementing a structure comprising said power module. implementing a structure comprising the power module, providing at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor; disposing a component housing to receive and enclose said power module and said at least one component; A method comprising:

40. 40. The method of claim 39, further comprising: connecting an electrical interface to at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor; and exchanging data with the at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor through the electrical interface.

41. 40. The method of claim 39, further comprising testing an embodiment of the power module for a particular application using the configuration.

42. connecting at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor through an electrical interface; and Testing an embodiment of the power module for a particular application using the structure.

40. The method of claim 39, further comprising:

43. 40. The method of claim 39, further comprising moving air through the component housing with a cooling fan.

44. 1. A method of configuring a power module, comprising: providing at least one power substrate; disposing a housing on the at least one power board; electrically connecting a first terminal to the at least one power board; providing a second terminal; electrically connecting a third terminal to the at least one power board; electrically connecting a plurality of power devices to the at least one power substrate; and providing a gate-source board electrically connected to said plurality of power devices; the gate-source board configured to receive at least one electrical signal, the method further comprising: disposing a plurality of resistors together with said gate-source board; each resistor of the plurality of resistors is electrically connected to a power device of the plurality of power devices, the method further comprising: electrically connecting each resistor of the plurality of resistors to one of a gate of a power device of the plurality of power devices and a source of a power device of the plurality of power devices; The method includes:

45. 45. The method of claim 44, wherein the at least one electrical signal comprises a gate driver signal.

46. 45. The method of claim 44, wherein the at least one electrical signal comprises a source Kelvin signal.

47. 45. The method of claim 44, further comprising electrically connecting a respective resistor of the plurality of resistors to the gate of a power device of the plurality of power devices.

48. 45. The method of claim 44, further comprising electrically connecting a respective resistor of the plurality of resistors to the source of a power device of the plurality of power devices.

49. 45. The method of claim 44, further comprising disposing a temperature sensor within the housing and electrically connecting it to the gate-source board.

50. the at least one power substrate having a metallic and / or conductive surface supporting the plurality of power devices; the at least one power substrate includes a portion that does not include the metal surface and / or the conductive surface; the temperature sensor is on the portion of the at least one power substrate that does not include the metallic surface and / or the conductive surface.

50. The method of claim 49.

51. implementing a construction comprising said power module; providing at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor; disposing a component housing to receive and enclose said power module and said at least one component; 45. The method of claim 44, further comprising:

52. 52. The method of claim 51, further comprising: connecting an electrical interface to at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor; and exchanging data with the at least one of the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor through the electrical interface.

53. 52. The method of claim 51, further comprising testing an embodiment of the power module for a particular application using the configuration.

54. 52. The method of claim 51, further comprising moving air through the component housing with a cooling fan.

55. A power module, at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; Equipped with the power module being constructed, arranged and configured to reduce inductance; The inductance includes a total stray inductance value of a critical power switching loop of the power module including a range of 12 (nH) to 2 (nH); Power module.

56. 56. The power module of claim 55, wherein said inductance comprises a total stray inductance value of a critical power switching loop of said power module comprising a range of 10 nH to 2 nH.

57. 56. The power module of claim 55, wherein said inductance comprises a total stray inductance value of a critical power switching loop of said power module comprising a range of 4 (nH) to 2 (nH).

58. 56. The power module of claim 55, wherein each of said plurality of power devices has between 4 and 10 bonds.

59. the first terminal includes a contact surface located at a first height above the housing; the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height; 56. A power module according to claim 55.

60. 56. A system comprising the power module of claim 55, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power source.

61. A power module, at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; Equipped with the power module being constructed, arranged and configured to increase the switching speed of the power module; The switching speed of the power module is in the range of 30 to 100 (A / ns); Power module.

62. 62. The power module of claim 61, wherein the switching speed of the power module has a range of 30 to 70 (A / ns).

63. 62. The power module of claim 61, wherein the switching speed of the power module has a range of 30 to 40 (A / ns).

64. 62. The power module of claim 61, wherein the switching speed of the power module has a range of 60 (V / ns) to 80 (V / ns).

65. 62. The power module of claim 61, wherein the switching speed of the power module has a range of 40 (V / ns) to 60 (V / ns).

66. 62. The power module of claim 61, wherein the switching speed of the power module has a range of 20 (V / ns) to 40 (V / ns).

67. 62. The power module of claim 61, wherein the total stray inductance value of the critical power switching loop of the power module comprises a range of 12 (nH) to 2 (nH).

68. the first terminal includes a contact surface located at a first height above the housing; the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height; 62. The power module of claim 61.

69. 62. A system comprising the power module of claim 61, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power source.

70. A power module, at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; Equipped with the power module is constructed, arranged and configured to reduce switching losses in the power module; The switching loss of the power module is in the range of 0.5 (mJ / A) to 0.25 (mJ / A). Power module.

71. 71. The power module of claim 70, wherein the switching losses of the power module are in the range of 0.4 (mJ / A) to 0.25 (mJ / A).

72. the first terminal includes a contact surface located at a first height above the housing; the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height; 71. The power module of claim 70.

73. 71. A system comprising the power module of claim 70, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power source.

74. A power module, at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; Equipped with the power module is constructed, arranged and configured to increase power device utilization of the power module; The power device utilization rate is defined as a percentage calculated by the ratio of the power device area to the total power module area, and the percentage comprises a range of 5 to 10%; Power module.

75. 75. The power module of claim 74, wherein said power device utilization is defined as a percentage calculated by the ratio of power device area to total power module area, said percentage comprising a range of 5-7%.

76. 75. The power module of claim 74, wherein said power device utilization is defined as a percentage calculated by the ratio of power device area to total power module area, said percentage comprising a range of 6-8%.

77. 75. The power module of claim 74, wherein said power device utilization is defined as a percentage calculated by the ratio of power device area to total power module area, said percentage comprising the range of 7-10%.

78. the first terminal includes a contact surface located at a first height above the housing; the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height; 75. A power module according to claim 74.

79. 75. A system comprising the power module of claim 74, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power source.

80. A power module, at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; Equipped with the power module is constructed, arranged and configured to reduce a height of the power module; The height of the power module is in the range of 7 mm to 30 mm. Power module.

81. 81. The power module of claim 80, wherein the height of the power module comprises a range of 9 mm to 11 mm.

82. 81. The power module of claim 80, wherein the height of the power module comprises a range of 15 mm to 17 mm.

83. 81. The power module of claim 80, wherein the height of the power module comprises a range of 23 mm to 27 mm.

84. the first terminal includes a contact surface located at a first height above the housing; the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height; 81. The power module of claim 80.

85. 81. The power module of claim 80, wherein a total stray inductance value of the critical power switching loop of the power module comprises a range of 12 (nH) to 2 (nH).

86. 81. A system comprising the power module of claim 80, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power source.

87. A power module, at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; Equipped with the power module is constructed, arranged and configured to increase terminal utilization of the power module; the terminal utilization ratio includes a base ratio including a total contact width of the terminal to a width of a power module base; The base ratio is in the range of 70% to 95%. Power module.

88. 88. The power module of claim 87, wherein the base ratio is in the range of 70% to 80%.

89. 88. The power module of claim 87, wherein the base ratio is in the range of 80% to 90%.

90. 88. The power module of claim 87, wherein the base ratio is in the range of 90% to 95%.

91. 88. The power module of claim 87, wherein the width of the power module base comprises a width of the at least one power substrate.

92. the first terminal includes a contact surface located at a first height above the housing; the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height; 88. The power module of claim 87.

93. 88. The power module of claim 87, wherein a total stray inductance value of the critical power switching loop of the power module comprises a range of 12 (nH) to 2 (nH).

94. 88. A system comprising the power module of claim 87, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power source.

95. A power module, at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; Equipped with the power module is constructed, arranged and configured to increase a terminal area of ​​the power module; the terminal area includes a terminal area ratio including a total contact area to a total power module area; The terminal area ratio is in the range of 15% to 50%. Power module.

96. 96. The power module of claim 95, wherein the terminal area ratio has a range of 20% to 40%.

97. 97. The power module of claim 96, wherein the terminal area ratio has a range of 20% to 25%.

98. 97. The power module of claim 96, wherein the terminal area ratio has a range of 25% to 30%.

99. 97. The power module of claim 96, wherein the terminal area ratio has a range of 30% to 35%.

100. the first terminal includes a contact surface located at a first height above the housing; the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height; 96. The power module of claim 95.

101. 96. The power module of claim 95, wherein a total stray inductance value of the critical power switching loop of the power module comprises a range of 12 (nH) to 2 (nH).

102. 96. A system comprising the power module of claim 95, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power supply.

103. A power module, at least one conductive power substrate; a housing disposed on the at least one conductive power substrate; a first terminal electrically connected to the at least one conductive power substrate; The first terminal; A second terminal; a third terminal electrically connected to the at least one conductive power substrate; a plurality of power devices disposed on and connected to the at least one conductive power substrate; A base plate; A plurality of pin fins disposed on the base plate; the plurality of pin fins configured to provide direct cooling to the power module; the plurality of pin fins are disposed on a bottom surface of the base plate; the plurality of pin fins are constructed and arranged to form flow channels between the plurality of pin fins; Power module.

104. the first terminal having a contact surface located on the housing; the second terminal having a contact surface located on the housing; the third terminal is electrically connected to at least one power device of the plurality of power devices; 104. The power module of claim 103.

105. 104. The power module of claim 103, wherein each pin fin of the plurality of pin fins is integrally formed with the base plate and comprises the same material as the base plate.

106. 104. The power module of claim 103, wherein the plurality of pin fins include a base, a terminal end face and one or more surfaces, the one or more surfaces extending from the base to the terminal end face.

107. the termination surface includes a cross-sectional shape relative to a plane parallel to a surface of the base plate; the cross-sectional shape comprises at least one of an asymmetric cross-sectional shape, an airfoil cross-sectional shape, and an airfoil cross-sectional shape; 107. The power module of claim 106.

108. the base includes a cross-sectional shape relative to a plane parallel to a surface of the base plate; The cross-sectional shape comprises at least one of a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, an elliptical cross-sectional shape, and a symmetrical cross-sectional shape; 107. The power module of claim 106.

109. the plurality of pin fins including a base attached to the base plate, at least one surface extending away from the base plate and the base, and a termination surface connected to the at least one surface; the at least one surface extends away from the base plate, the at least one surface narrowing as the at least one surface extends to the termination surface; 107. The power module of claim 106.

110. 104. The power module of claim 103, having an output current capability that is 5% to 40% greater than a power module that is not directly cooled.

111. 104. A power module as claimed in claim 103, having an output current capability 15% greater than a power module that is not directly cooled.

112. 104. A system comprising the power module of claim 103, further comprising a cold plate.

113. 104. A system comprising the power module of claim 103, further comprising a cold plate and at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power supply.

114. 104. A system comprising the power module of claim 103, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power source.

115. A power module, A base plate; at least one power board; a housing disposed on the at least one power board; a first terminal electrically connected to the at least one power board; A second terminal; a third terminal electrically connected to the at least one power board; a plurality of power devices electrically connected to the at least one power substrate; a gate-source board electrically connected to the plurality of power devices; A plurality of pin fins disposed on the base plate; the plurality of pin fins configured to provide direct cooling to the power module; the plurality of pin fins are disposed on a bottom surface of the base plate; the plurality of pin fins are constructed and arranged to form flow channels between the plurality of pin fins; Power module.

116. 116. The power module of claim 115, wherein each pin fin of the plurality of pin fins is integrally formed with the base plate and comprises the same material as the base plate.

117. 116. The power module of claim 115, wherein the plurality of pin fins include a base, a terminal end face and one or more surfaces, the one or more surfaces extending from the base to the terminal end face.

118. the termination surface includes a cross-sectional shape relative to a plane parallel to a surface of the base plate; the cross-sectional shape comprises at least one of an asymmetric cross-sectional shape, an airfoil cross-sectional shape, and an airfoil cross-sectional shape; 118. The power module of claim 117.

119. the base includes a cross-sectional shape relative to a plane parallel to a surface of the base plate; The cross-sectional shape comprises at least one of a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, an elliptical cross-sectional shape, and a symmetrical cross-sectional shape; 118. The power module of claim 117.

120. the plurality of pin fins include a cross-sectional shape with respect to a plane parallel to a surface of the base plate; the cross-sectional shape comprises at least one of a contoured cross-sectional shape, a circular cross-sectional shape, a square cross-sectional shape, and a rectangular cross-sectional shape; 116. The power module of claim 115.

121. the plurality of pin fins including a base attached to the base plate, at least one surface extending away from the base plate and the base, and a termination surface connected to the at least one surface; the at least one surface extends away from the base plate, the at least one surface narrowing as the at least one surface extends to the termination surface; 116. The power module of claim 115.

122. 116. A power module as claimed in claim 115, having an output current capability that is between 5% and 40% greater than a power module that is not directly cooled.

123. 116. A power module as claimed in claim 115, having an output current capability 15% greater than a power module that is not directly cooled.

124. 116. A system comprising the power module of claim 115, further comprising a cold plate.

125. 116. A system comprising the power module of claim 115, further comprising a cold plate and at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power supply.

126. 116. A system comprising the power module of claim 115, further comprising at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power source.

127. 1. A method of configuring a power module, comprising: providing at least one power substrate; disposing a housing over the at least one power board; electrically connecting a first terminal to the at least one power board; providing a second terminal; electrically connecting a third terminal to the at least one power board; electrically connecting a plurality of power devices to the at least one power substrate; and providing a gate-source board electrically connected to said plurality of power devices; the gate-source board configured to receive at least one electrical signal, the method further comprising: Providing a base plate; providing a plurality of pin fins disposed on the base plate; Arranging the pin fins to form flow paths between the pin fins; and Configuring the plurality of pin fins to cool at least one component of the power module. The method includes:

128. configuring the plurality of pin fins to provide direct cooling to the power module; and disposing the plurality of pin fins on a bottom surface of the base plate; 128. The method of claim 127, further comprising:

129. 128. The method of claim 127, further comprising configuring the plurality of pin fins to include a base, a terminal surface, and one or more surfaces, the one or more surfaces extending from the base to the terminal surface.

130. the termination surface includes a cross-sectional shape relative to a plane parallel to a surface of the base plate; the cross-sectional shape comprises at least one of an asymmetric cross-sectional shape, an airfoil cross-sectional shape, and an airfoil cross-sectional shape; The method of claim 129.

131. the base includes a cross-sectional shape relative to a plane parallel to a surface of the base plate; The cross-sectional shape comprises at least one of a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, an elliptical cross-sectional shape, and a symmetrical cross-sectional shape; The method of claim 129.

132. 130. The method of claim 129, wherein the output current capability is between 5% and 40% greater than a non-directly cooled power module.

133. 130. The method of claim 129, wherein the output current capability is 15% greater than that of a power module that is not directly cooled.

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