Flattening device and article manufacturing method

Abstract

To provide, in a flattening technique, a technique advantageous for eliminating static electricity on a member on which peeling charging occurs.SOLUTION: A flattening device flattens a composition on a substrate by using a member having a flat surface, and comprises: a first processing unit that performs curing processing of curing the composition in a contact state where the flat surface of the member is in contact with the composition on the substrate; a second processing unit that performs separation processing of separating the member from the composition on the substrate, on the substrate in the contact state on which the curing processing is performed by the first processing unit; and a conveying mechanism that conveys the substrate on which the curing processing is performed by the first processing unit to the second processing unit. The second processing unit has an ion generation unit that ionizes a gas on the periphery of the substrate in the contact state.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] The present invention relates to a planarization apparatus and a method for manufacturing an article.

Background Art

[0002] With the increasing demand for miniaturization of semiconductor devices and the like, in addition to conventional photolithography techniques, an imprint technique capable of forming a film (structure) controlled on the order of several nanometers on a substrate has attracted attention. The imprint technique is a microfabrication technique for shaping a composition on a substrate using a mold (member). For example, in the imprint technique using a photocuring method, the uncured composition supplied onto the substrate is cured by irradiating light while the uncured composition and the mold are in contact, and the mold is separated from the cured composition, thereby shaping the composition on the substrate.

[0003] In addition, in the manufacturing process of semiconductor devices and the like, it is required to form a planarization film (i.e., a film having a flat surface) on a substrate on which various patterns are formed. As a general planarization technique for forming a planarization film on a substrate, it is known to form a coating film on the substrate using a coating device such as a spin coater. However, in the method of forming a coating film on a substrate using a coating device, it is difficult to control the step on the substrate in nanoscale units. Therefore, in recent years, a planarization technique has been proposed in which the imprint technique is applied and a composition on a substrate is planarized using a mold (member) having a flat surface. In the planarization technique applying the imprint technique, the composition on the substrate can be planarized by curing the composition supplied onto the substrate while the composition and the flat surface of the mold are in contact, and separating the mold from the cured composition. A mold used in such a planarization technique may be called a planar template or a superstrate.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

SUMMARY OF THE INVENTION

PROBLEMS TO BE SOLVED BY THE INVENTION

[0005] In planarization technology, a phenomenon called peeling electrification may occur in which the mold becomes charged by separating the mold from the cured composition on the substrate. When such peeling electrification occurs, foreign matter (particles) in the surroundings may be attracted to the mold and adhere to it. Then, when the mold and the composition on the substrate are brought into contact with each other with foreign matter adhering to the mold, there is a possibility that defects may occur in the planarized film formed on the substrate or the mold may be damaged.

[0006] Patent Document 1 proposes performing static elimination of a mold by passing soft X-rays through a gap formed between the mold and the substrate after separating the mold having an uneven pattern from the composition on the substrate. However, in planarization technology, generally, since the mold contacts the composition over the entire area of the substrate, it is difficult to pass soft X-rays through the gap between the mold and the substrate as in the method described in Patent Document 1.

[0007] Therefore, an object of the present invention is to provide a technique advantageous for performing static elimination of a member in which peeling electrification has occurred in planarization technology.

MEANS FOR SOLVING THE PROBLEMS

[0008] In order to achieve the above object, a planarization apparatus according to one aspect of the present invention is a planarization apparatus that planarizes a composition on a substrate using a member having a flat surface, the planarization apparatus including: a first processing unit that performs a curing process for curing the composition in a contact state in which the flat surface of the member is in contact with the composition on the substrate; a second processing unit that performs a separation process for separating the member from the composition on the substrate with respect to the substrate in the contact state in which the curing process has been performed by the first processing unit; and a transport mechanism that transports the substrate on which the curing process has been performed by the first processing unit to the second processing unit, wherein the second processing unit includes an ion generation unit that ionizes gas around the substrate in the contact state.

[0009] A further object or other aspect of the present invention will be clarified by the preferred embodiments described below with reference to the accompanying drawings.

Advantages of the Invention

[0010] According to the present invention, for example, it is possible to provide an advantageous technique for removing static electricity from a member in which static electricity due to peeling has occurred in a planarization technique.

Brief Description of the Drawings

[0011]

Figure 1

Figure 2

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Figure 5

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Figure 11

Mode for Carrying Out the Invention

[0012] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the invention according to the claims. Although a plurality of features are described in the embodiments, not all of these plurality of features are essential to the invention, and the plurality of features may be arbitrarily combined. Further, in the accompanying drawings, the same or similar configurations are denoted by the same reference numerals, and redundant descriptions are omitted.

[0013] In this specification and the accompanying drawings, directions are indicated in an XYZ coordinate system in which the direction parallel to the surface of the substrate (that is, the holding surface for holding the substrate) is the XY plane. The directions parallel to the X-axis, Y-axis, and Z-axis in the XYZ coordinate system are the X-direction, Y-direction, and Z-direction, respectively, and the rotations around the X-axis, Y-axis, and Z-axis are θX, θY, and θZ, respectively. Control or drive related to the X-axis, Y-axis, and Z-axis means control or drive related to the direction parallel to the X-axis, the direction parallel to the Y-axis, and the direction parallel to the Z-axis, respectively. Further, control or drive related to the θX-axis, θY-axis, and θZ-axis means control or drive related to the rotation around an axis parallel to the X-axis, the rotation around an axis parallel to the Y-axis, and the rotation around an axis parallel to the Z-axis, respectively. Also, the position is information specified based on the coordinates of the X-axis, Y-axis, and Z-axis, and the posture is information specified by the values of the θX-axis, θY-axis, and θZ-axis. Positioning means controlling the position and / or the posture.

[0014] A planarization apparatus according to an embodiment of the present invention will be described. The planarization apparatus is a lithography apparatus that planarizes (molds) a composition on a substrate using a member (mold) having a flat surface, and can be employed in a lithography process which is a manufacturing process such as for semiconductor devices and magnetic storage media. The member (mold) having a flat surface may be called a planar template or a superstrate, and may hereinafter be referred to as a "planar template".

[0015] For the composition supplied onto the substrate, a curable composition (sometimes referred to as an uncured resin) that cures when energy for curing is applied is used. As the energy for curing, electromagnetic waves, heat, etc. are used. The electromagnetic waves include, for example, light selected from the range of wavelengths of 10 nm or more and 1 mm or less, specifically, infrared rays, visible light, ultraviolet rays, etc. The curable composition is a composition that cures by irradiation with light or by heating. Among these, the photocurable composition that cures by irradiation with light contains at least a polymerizable compound and a photoinitiator, and may contain a non-polymerizable compound or a solvent as necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal release agent, a surfactant, an antioxidant, a polymer component, etc. The composition is applied in a film form onto the substrate by a spin coater or a slit coater. Alternatively, the composition may be applied onto the substrate in a droplet form, or in an island or film form formed by connecting a plurality of droplets, by a liquid ejection head. The viscosity of the imprint material (viscosity at 25°C) is, for example, 1 mPa·s or more and 100 mPa·s or less.

[0016] When a photocurable composition is used, the planar template (mold) may be made of a light-transmissive material. Specifically, as the material of the planar template, glass, quartz, PMMA (Polymethyl Methacrylate), a flexible film such as a polycarbonate resin, a photocurable film, a metal film, etc. are preferable. The planar template can be circular with a diameter of 300 mm or more and 500 mm or less, but is not limited thereto. The thickness of the planar template can be 0.25 mm or more and 2 mm or less, but is not limited thereto. Further, as the material of the substrate, for example, glass, ceramics, metal, semiconductor, resin, etc. are used. If necessary, a member made of a material different from the substrate may be provided on the surface of the substrate. The substrate includes, for example, a silicon wafer, a compound semiconductor wafer, and quartz glass. The substrate has an uneven structure caused by the pattern formed in the previous process, and the planarization device can be used to form a planarization film covering the uneven structure on the substrate.

[0017] FIG. 1 is a schematic diagram showing a configuration example of the planarization device 100 of the present embodiment. The planarization device 100 cures the uncured composition 13 while the uncured composition 13 supplied on the substrate 11 is in contact with the flat surface 12a of the planar template 12, and then separates the planar template 12 from the cured composition 13. Thereby, a planarization film (that is, a film having a flat surface) made of the cured composition 13 can be formed on the substrate 11. Such a process is called a planarization process, and when a planar template 12 having a size (size) covering the entire area of the substrate 11 is used, a planarization film made of the cured product of the composition 13 is formed all at once over the entire area of the substrate 11. In the present embodiment, an example of adopting a photocuring method of curing the composition 13 by irradiating the composition 13 on the substrate 11 with light (ultraviolet light) will be described.

[0018] The planarization device 100 may include a plurality of processing units that perform predetermined processes on the substrate 11 respectively, a transfer mechanism 130 that transfers the substrate 11 between the plurality of processing units, and a control unit CNT. In the planarization device 100 of the present embodiment, as shown in FIG. 1, a first processing unit 110 and a second processing unit 120 are provided as the plurality of processing units.

[0019] The first processing unit 110 is a module that performs a curing process for curing the composition 13 in a state where the flat surface 12a of the planar template 12 is in contact with the composition 13 on the substrate 11 (hereinafter sometimes referred to as the contact state). The first processing unit 110 includes a curing unit 112 (UV light source) that cures the composition 13 by irradiating the composition 13 on the substrate 11 in the contact state with light 112a (ultraviolet light).

[0020] The second processing unit 120 is a module that performs a separation process for separating the planar template 12 from the composition 13 on the substrate 11 with respect to the substrate 11 in the contact state on which the curing process has been performed by the first processing unit 110. Further, the second processing unit 120 of the present embodiment can be configured to perform a contact process of bringing the planar template 12 into contact with the composition 13 on the substrate 11 before the curing process is performed by the first processing unit 110. A configuration example of the second processing unit 120 will be described later.

[0021] The first processing unit 110 and the second processing unit 120 are arranged adjacent to each other, and the internal space of the chamber 111 of the first processing unit 110 and the internal space of the chamber 121 of the second processing unit 120 communicate with each other through the carry-in / out port 140. It may be understood that the position where the carry-in / out port 140 is provided also serves as a carry-out position where the substrate 11 is arranged in order to carry out the substrate 11 on which the planarization process has been performed from the planarization apparatus 100.

[0022] The transfer mechanism 130 is a mechanism that transfers the substrate 11 between the first processing unit 110 and the second processing unit 120. The transfer mechanism 130 of the present embodiment may include a stage 131 (substrate holding unit) that is movable across the first processing unit 110 and the second processing unit 120 while holding the substrate 11, and a substrate driving unit 132 that drives the substrate 11 by driving the stage 131. The stage 131 is shared by the first processing unit 110 and the second processing unit 120, and is configured to be movable on a base 133 disposed across the first processing unit 110 and the second processing unit 120 through the transfer inlets and outlets 140. Further, the substrate driving unit 132 has an actuator such as a linear motor, for example, and drives the stage 131 (substrate 11) across the first processing unit 110 and the second processing unit 120. The transfer mechanism 130 can transfer the substrate 11 between the first processing unit 110 and the second processing unit 120 by moving the stage 131 holding the substrate 11 on the base 133 across the first processing unit 110 and the second processing unit 120.

[0023] The control unit CNT is constituted by a computer (information processing apparatus) having a processor such as a CPU (Central Processing Unit) and a storage unit such as a memory. The control unit CNT is connected to each part of the planarization apparatus 100 by lines and controls each part of the planarization apparatus 100. That is, the control unit CNT controls the planarization process by controlling a plurality of processing units (the first processing unit 110, the second processing unit 120) and the transfer mechanism 130. Further, the control unit CNT may be constituted by a PLD (abbreviation of Programmable Logic Device) such as an FPGA (abbreviation of Field Programmable Gate Array), or an ASIC (abbreviation of Application Specific Integrated Circuit).

[0024] Next, a configuration example of the second processing unit 120 will be described with reference to FIG. 1. The second processing unit 120 may include a mold holding unit 122 that holds a planar template 12 (mold), a mold driving unit 123 that drives the planar template 12 by driving the mold holding unit 122 in the Z direction, and a support member 124 that supports the mold driving unit 123. In the second processing unit 120, contact processing and separation processing are performed in a state where the substrate 11 held by the stage 131 of the transfer mechanism 130 is disposed at the processing position. The processing position is a position where the substrate 11 should be disposed below the mold holding unit 122 for performing contact processing and separation processing.

[0025] The substrate driving unit 132 of the transfer mechanism 130 and the mold driving unit 123 of the second processing unit 120 constitute a relative driving mechanism that relatively drives the substrate 11 and the planar template 12 in order to adjust the relative position between the substrate 11 and the planar template 12 in the second processing unit 120. The adjustment of the relative position between the substrate 11 and the planar template 12 by the relative driving mechanism includes driving for bringing the composition 13 on the substrate 11 into contact with the planar template 12, and driving for separating the planar template 12 from the cured composition 13 on the substrate 11. Further, the adjustment of the relative position between the substrate 11 and the planar template 12 by the relative movement mechanism includes alignment between the substrate 11 and the planar template 12. The substrate driving unit 132 is configured to drive the substrate 11 with respect to a plurality of axes (for example, three axes of the X axis, Y axis, and θZ axis, preferably, six axes of the X axis, Y axis, Z axis, θX axis, θY axis, and θZ axis). The mold driving unit 123 is configured to drive the planar template 12 with respect to a plurality of axes (for example, three axes of the Z axis, θX axis, and θY axis, preferably, six axes of the X axis, Y axis, Z axis, θX axis, θY axis, and θZ axis).

[0026] The mold holding part 122 and the mold driving part 123 have a space defining member 125 for defining (forming) a pressure control space SP on the back surface side of the planar template 12 (the surface opposite to the flat surface facing the substrate 11). The pressure control space SP is substantially sealed by the planar template 12 and the space defining member 125 in a state where the planar template 12 is held by the mold holding part 122. Then, the internal pressure of the pressure control space SP is adjusted by the pressure control part 126. For example, the pressure control part 126 can deform the planar template 12 into a convex shape in which the central part protrudes toward the substrate 11 by making the internal pressure of the pressure control space SP higher than the atmospheric pressure. By deforming the planar template 12 into a convex shape in the contact process, the planar template 12 can be gradually brought into contact with the composition 13 on the substrate 11 from the central part, and the trapping of air bubbles between the planar template 12 and the substrate 11 can be reduced. Further, by deforming the planar template 12 into a convex shape in the separation process, the separation of the planar template 12 from the cured composition 13 on the substrate 11 can be facilitated.

[0027] The second processing unit 120 may further include a supply unit 127 and a measurement unit 128. The supply unit 127 (dispenser) supplies (disposes, distributes) the composition 13 on the substrate 11 as a plurality of droplets. However, when the substrate 11 supplied with the composition 13 by an external device of the planarization apparatus 100 is carried into the planarization apparatus 100, the supply unit 127 may not be provided in the second processing unit 120. Alternatively, when a processing unit for supplying the composition 13 onto the substrate 11 is provided in the planarization apparatus 100 separately from the second processing unit 120, the supply unit 127 may not be provided in the second processing unit 120. Further, the measurement unit 128 measures the misalignment (alignment error) between the substrate 11 and the planar template 12. Specifically, the measurement unit 128 detects the relative positions of the marks on the substrate 11 and the marks on the planar template 12 via the spatial defining member 125, and measures the misalignment between the substrate 11 and the planar template 12 based on the detection result. In this case, the spatial defining member 125 may be configured by a member that transmits light so that the measurement unit 128 can detect the marks on the substrate 11 and the planar template 12.

[0028] Incidentally, in the separation process performed by the second processing unit 120, a phenomenon called peeling electrification may occur in which the planar template 12 becomes charged by separating the planar template 12 from the cured composition 13 on the substrate 11. When such peeling electrification occurs, surrounding foreign substances (particles) may be attracted to and adhere to the planar template 12. Then, when the planar template 12 with foreign substances adhered thereto is brought into contact with the composition 13 on the substrate 11, there is a possibility that defects may occur in the planarization film formed on the substrate 11 or the planar template 12 may be damaged.

[0029] Therefore, in the planarization apparatus 100 of the present embodiment, an ion generation unit 129 is provided in the second processing unit 120. The ion generation unit 129, also called an ionizer, ionizes the gas around the substrate 11 in a contact state where the flat surface 12a of the planar template 12 is in contact with the composition 13 on the substrate 11. Thereby, the peeling charge that may occur on the planar template 12 in the separation process can be reduced. There are several types of ion generation units 129 (ionizers), such as a corona discharge method and an energy ray (for example, X-ray or α-ray) irradiation method. Generally, since the corona discharge method itself may be a cause of particle generation, it is advisable to adopt an X-ray irradiation method or an α-ray irradiation method that can perform static elimination while maintaining cleanliness. In the X-ray irradiation method or the α-ray irradiation method, for example, by directly irradiating the planar template 12 with X-rays or α-rays, ions are generated around the planar template 12 to eliminate the static electricity of the planar template 12. Generally, α-rays have a short range and disappear within a few centimeters from the radiation source. On the other hand, X-rays depend on energy but reach from several tens of centimeters to several meters from the radiation source. Therefore, when it is desired to perform static elimination in a certain range using a single irradiation source, the X-ray irradiation method is more advantageous. However, when directly irradiating the planar template 12 with X-rays or α-rays, the deterioration of the planar template 12 can be accelerated. Therefore, the ion generation unit 129 of the present embodiment is configured to ionize the gas around the substrate 11 and the planar template 12 in the contact state. Here, the ion generation unit 129 of the present embodiment includes an ejection unit that ejects soft X-rays, and adopts a method of ionizing the gas by irradiating the soft X-rays 129a ejected from the ejection unit to the gas around the substrate 11 and the planar template 12 in the contact state.

[0030] In addition, foreign matter also adheres to the upper surface of the stage 131 of the transfer mechanism 130 and the like. The adhesion strength of the foreign matter adhering to the stage 131 varies. If the foreign matter adhering to the stage 131 does not detach from the stage 131, the foreign matter will not adhere to the flat template 12. On the other hand, when the foreign matter adhering to the stage 131 detaches from the stage 131, the foreign matter may adhere to the flat template 12. Specifically, an electrostatic force (Coulomb force) acts on the foreign matter due to the electric field formed between the electrostatically charged flat template 12 and the stage 131. When the electrostatic force exceeds the adhesion force of the foreign matter, the foreign matter detaches from the stage 131 and can be attracted and adhered to the flat template 12. The upper surface of the stage 131 may be configured to be at the same height as the upper surface of the substrate 11. In this case, the distance between the flat template 12 and the upper surface of the stage 131 becomes quite small. The electrostatic force is inversely proportional to the square of the distance. From this, the electrostatic force acting on the foreign matter on the stage 131 can be considerably greater than the electrostatic force acting between the flat template 12 and the base 133 or the surrounding members when the stage 131 does not exist below the flat template 12. Therefore, if electrostatic detachment occurs on the flat template 12, a large number of foreign matters adhering to the stage 131 may detach from the stage 131 and adhere to the flat template 12 through multiple planarization processes.

[0031] Next, the planarization process performed by the planarization apparatus 100 of the present embodiment will be described. FIG. 2 is a sequence diagram showing the flow of the planarization process performed by the planarization apparatus 100 (the first processing unit 110 and the second processing unit 120) of the present embodiment. The planarization process shown in the sequence diagram of FIG. 2 starts with the substrate 11 being held by the stage 131 of the transfer mechanism 130 and is controlled by the control unit CNT. FIGS. 3 to 6 are schematic diagrams for explaining each process included in the planarization process. FIG. 3 is a schematic diagram for explaining the contact process of bringing the planar template 12 into contact with the composition 13 on the substrate 11. FIG. 4 is a schematic diagram for explaining the curing process of curing the composition 13 on the substrate 11 with which the flat surface of the planar template 12 is in contact. FIG. 5 is a schematic diagram for explaining the separation process of separating the planar template 12 from the cured composition 13 on the substrate 11. FIG. 6 is a schematic diagram for explaining the movement of the substrate 11 to the unloading position P2 where the separation process has been performed. In FIGS. 3 to 6, only the parts necessary for the explanation are illustrated, and the illustration of other parts is omitted.

[0032] In step S11, the control unit CNT performs a supply process in the second processing unit 120. The supply process is a process of supplying the composition 13 onto the substrate 11. For example, the control unit CNT causes the supply unit 127 to eject the composition 13 as a plurality of droplets while moving the substrate 11 below the supply unit 127. The movement of the substrate 11 below the supply unit 127 is performed by driving the stage 131 by the substrate driving unit 132. Thereby, the composition 13 can be supplied onto the substrate 11 as a plurality of droplets. Further, after the supply process, in order to volatilize the solvent contained in the composition 13 supplied onto the substrate 11, it may be waited for a predetermined time.

[0033] In step S12, the control unit CNT performs a contact process in the second processing unit 120. The contact process is a process of bringing the flat surface 12a of the planar template 12 into contact with the composition 13 supplied onto the substrate 11. In the contact process of the present embodiment, control for deforming the planar template 12 into a convex shape can be performed. The contact process is performed in a state where the substrate 11 is disposed at the processing position P1.

[0034] For example, the control unit CNT deforms the planar template 12 into a convex shape by controlling the pressure in the pressure control space SP with the pressure control unit 126. At this time, the planar template 12 is positioned in the Z direction by the mold driving unit 123 so that the deformed planar template 12 does not contact the composition 13 on the substrate 11. Further, the control unit CNT measures the misalignment between the substrate 11 and the planar template 12 by the measurement unit 128, and performs XY-direction alignment between the substrate 11 and the planar template 12 based on the measurement result. The alignment can be performed by driving the substrate 11 (stage 131) by the substrate driving unit 132.

[0035] Next, as shown in FIG. 3(a), the control unit CNT lowers the planar template 12 by the mold driving unit 123 while controlling the pressure in the pressure control space SP (that is, the deformation amount of the planar template 12). That is, the distance between the planar template 12 and the substrate 11 is narrowed. At this time, the force generated by the mold driving unit 123 is called an imprinting force and is controlled by the control unit CNT. Further, the control unit CNT controls the pressure in the pressure control space SP by the pressure control unit 126 so that the deformation amount of the planar template 12 gradually decreases as the contact area between the composition 13 on the substrate 11 and the planar template 12 expands. That is, the control unit CNT controls the pressure in the pressure control space SP by the pressure control unit 126 so that the substrate 11 and the planar template 12 become parallel when the planar template 12 and the composition 13 are in contact over the entire area of the substrate 11. Thereby, as shown in FIG. 3(b), a liquid film of the composition 13 having a uniform thickness can be formed between the planar template 12 and the substrate 11.

[0036] When a liquid film of the composition 13 is formed between the planar template 12 and the substrate 11, the control unit CNT releases the holding of the planar template 12 by the mold holding unit 122. Then, as shown in FIG. 3(c), the control unit CNT raises the mold holding unit 122 by the mold driving unit 123. That is, the distance between the planar template 12 in contact with the composition 13 on the substrate 11 and the mold holding unit 122 is widened.

[0037] In step S13, the control unit CNT conveys the substrate 11 in the contact state where the planar template 12 is in contact with the composition 13 from the second processing unit 120 to the first processing unit 110 by the conveyance mechanism 130. For example, the control unit CNT moves the stage 131 from the second processing unit 120 to the first processing unit 110 by the substrate drive unit 132 of the conveyance mechanism 130. Thereby, the substrate 11 in the contact state held by the stage 131 can be conveyed from the second processing unit 120 to the first processing unit 110.

[0038] In step S14, the control unit CNT performs a curing process in the first processing unit 110. The curing process is a process of curing the composition 13 in the contact state where the flat surface 12a of the planar template 12 is in contact with the composition 13 on the substrate 11. For example, the control unit CNT arranges the substrate 11 in the contact state below the curing unit 112 by the substrate drive unit 132. Then, as shown in FIG. 4, the control unit CNT causes the curing unit 112 to emit light 112a (ultraviolet ray) and irradiates the composition 13 on the substrate 11 with which the flat surface 12a of the planar template 12 is in contact with the light 112a (ultraviolet ray). Thereby, the composition 13 between the planar template 12 and the substrate 11 can be cured.

[0039] In step S15, the control unit CNT conveys the substrate 11 in the contact state where the curing process has been performed in the first processing unit 110 from the first processing unit 110 to the second processing unit 120 by the conveyance mechanism 130. For example, the control unit CNT moves the stage 131 from the first processing unit 110 to the second processing unit 120 by the substrate drive unit 132 of the conveyance mechanism 130. Thereby, the substrate 11 in the contact state held by the stage 131 can be conveyed from the first processing unit 110 to the second processing unit 120. In the present embodiment, the substrate 11 in the contact state is conveyed (arranged) to the processing position P1 of the second processing unit 120 by the conveyance mechanism 130.

[0040] In step S16, the control unit CNT starts the ionization of the gas in the second processing unit 120 by the ion generation unit 129. That is, the ion generation unit 129 is made to start injecting the soft X-rays 129a, and the ionization of the gas around the substrate 11 in the contact state disposed at the processing position P1 is started. In the case of this embodiment, the ion generation unit 129 is disposed at a position on the opposite side of the carry-in / out port 140 (carry-out position P2) with the processing position P1 interposed therebetween, and after the substrate 11 is transported from the first processing unit 110 to the second processing unit 120 by the transport mechanism 130, the ionization of the gas is started.

[0041] In step S17, the control unit CNT performs a separation process in the second processing unit 120. The separation process is a process of separating the planar template 12 from the composition 13 on the substrate 11 that has been subjected to the curing process in the first processing unit 110, and may be called a release process. The separation process is performed while the substrate 11 is disposed at the processing position P1.

[0042] For example, as shown in FIG. 5(a), the control unit CNT lowers the mold holding unit 122 by the mold driving unit 123 and brings the mold holding unit 122 closer to the planar template 12 in contact with the composition 13 on the substrate 11. Then, when the planar template 12 and the mold holding unit 122 come into contact, the control unit CNT causes the mold holding unit 122 to hold the planar template 12 (holding operation). Next, as shown in FIGS. 5(b) to 5(c), the control unit CNT raises the mold holding unit 122 by the mold driving unit 123 and moves the mold holding unit 122 away from the substrate 11, thereby separating the planar template 12 from the cured composition 13 on the substrate 11 (separation operation). At this time, the force generated by the mold driving unit 123 is called a release force and is controlled by the control unit CNT.

[0043] Also, when starting the separation operation, the ion supply unit 118 is already operating, and the area around the substrate 11 and the flat template 12 is filled with the ionized gas. As the separation process (separation operation) proceeds, the gap between the substrate 11 and the flat template 12 becomes negative pressure, and as shown in FIGS. 5(b) to (c), the ionized gas is drawn into the gap by the air flow 151 that enters the gap. As a result, the charge removal effect (charge removal speed) of the substrate 11 (composition 13) and the flat template 12 can be improved. At this time, the greater the speed at which the substrate 11 and the flat template 12 are separated from each other, the more efficiently the ionized gas is drawn into the gap between the substrate 11 and the flat template 12, so that the charge removal effect can be further improved.

[0044] Furthermore, the second processing unit 120 may be provided with a negative pressure suction unit 150 (negative pressure suction port) on the side opposite to the ion generation unit 129 with the substrate 11 and the flat template 12 (processing position) interposed therebetween. The negative pressure suction unit 150 is arranged so as to be able to suck gas from the gap between the substrate 11 and the flat template 12. By providing such a negative pressure suction unit 150, the ionized gas generated by the ion generation unit 129 is more efficiently drawn into the gap, so that the charge removal effect can be further improved. In this embodiment, the negative pressure suction unit 150 is provided on both the mold driving unit 123 and the stage 131, but it is not limited thereto, and it may be provided on only one of the mold driving unit 123 and the stage 131, or may be provided on other components of the second processing unit 120. The negative pressure suction unit 150 may be provided on the mold holding unit 122.

[0045] Here, the timing for starting the ionization of the gas by the ion generation unit 129 in step S16 is preferably after the substrate 11 in the contact state is transported from the first processing unit 110 to the second processing unit 120 by the transport mechanism 130 and before the separation process in step S17 starts. Specifically, the timing for starting the ionization of the gas by the ion generation unit 129 is preferably before the holding operation in the separation process starts. In this case, in the separation process, since the gas around the substrate 11 in the contact state arranged at the processing position P1 of the second processing unit 120 is sufficiently ionized, the charge removal effect can be improved.

[0046] In step S18, the control unit CNT moves the substrate 11 to the unloading position P2 (the loading / unloading port 140 in this embodiment) by the transport mechanism 130 in order to unload the substrate 11 from which the separation process has ended from the second processing unit 120. For example, as shown in FIG. 6(a), the control unit CNT drives the stage 131 by the substrate driving unit 132 of the transport mechanism 130 so that the substrate 11 is arranged at the unloading position P2, thereby moving the substrate 11 from the processing position P1 to the unloading position P2. At this time, as the stage 131 moves from below the flat template 12, an air flow 152 that advances below the flat template 12 is generated due to the negative pressure generated below the flat template 12. By this air flow 152, the ionized gas is drawn below the flat template 12. As a result, the charge removal effect of the flat template 12 can be improved. If the ionization of the gas by the ion generation unit 129 is continued until the substrate 11 is arranged at the unloading position P2 as shown in FIG. 6(b), the charge removal effect can be further improved.

[0047] Here, the charge removal effect of the planar template 12 due to the movement of the substrate 11 will be described. As shown in Fig. 6(a), the Z-direction distance between the planar template 12 and the stage 131 below it when the movement of the substrate 11 to the unloading position P2 is started is defined as the first distance D1. Also, as shown in Fig. 6(b), the Z-direction distance between the planar template 12 and the base 133 below it when the substrate 11 is placed at the unloading position P2 is defined as the second distance D2. In the planarization apparatus 100 of the present embodiment, the second distance D2 is larger than the first distance D1, and the second distance D2 is 10 times or more the first distance D1. That is, by moving the substrate 11 to the unloading position P2, the distance between the planar template 12 and the members existing below it expands from the first distance D1 to the second distance D2, which is 10 times or more thereof. Thereby, the volume of the gas that can be ionized by the ion generation unit 129 increases, and the charge removal effect can be improved. The larger the second distance D2 is, the more the charge removal effect can be improved. However, when the second distance D2 becomes a certain value or more, the charge removal effect hardly changes. In order to efficiently ionize the gas and remove the charge from the planar template 12, the second distance D2 is preferably 20 mm or more. For example, when the second distance D2 is 10 mm, the charge removal time of the planar template 12 is 100 seconds or more, whereas when the second distance D2 is 20 mm, the charge removal time of the planar template 12 can be significantly shortened to less than 25 seconds. Note that the charge removal time is an index representing the charge removal effect and can be defined as the time required to remove the charge of a charged object charged to ±1000 V to ±100 V.

[0048] Next, an arrangement example of the ion generation unit 129 will be described. Figs. 7 to 8 are diagrams for explaining the arrangement example of the ion generation unit 129. Figs. 7 to 8 are views of the second processing unit 120 seen from above (+Z direction). Figs. 7 to 8 show the mold holding unit 122, the planar template 12 held by the mold holding unit 122, the stage 131, the substrate 11 held by the stage 131, and the ion generation unit 129. Also, Figs. 7 to 8 show the processing position P1 where the substrate 11 is placed when the separation process is performed, and the unloading position P2 where the substrate 11 is placed to unload the substrate 11 from the second processing unit 120.

[0049] In the second processing unit 120 of the present embodiment, as shown in FIG. 7(a), the ion generation unit 129 is disposed at a position on the side opposite to the carry-out position P2 with the processing position P1 interposed therebetween. That is, the ion generation unit 129 is disposed on the side of the mold holding unit 122 in the direction opposite to the direction (-X direction) in which the stage 131 (substrate 11) moves from below the planar template 12 held by the mold holding unit 122 (+X direction). Thereby, for example, when the ion generation unit 129 includes a soft X-ray ionizer and the stage 131 moves in the -X direction so as to move away from below the planar template 12, the shielding object that shields the soft X-ray 129a is removed from below the planar template 12. As a result, since the soft X-ray 129a can be directly irradiated onto the space below the planar template 12, the amount of gas ionized below the planar template 12 increases, and the planar template 12 can be efficiently discharged.

[0050] Further, the second processing unit 120 may be provided with an air flow generation unit 170 that generates an air flow 171 that travels in the same direction (-X direction) as the emission direction of the soft X-ray 129a from the ion generation unit 129. The air flow generation unit 170 is a mechanism that sends out gas. As the gas sent out from the air flow generation unit 170, clean air can be used. The clean air may include outside air, but for example, it is preferable to use air that has passed through a filter. When the air flow generation unit 170 generates an air flow 171 in the -X direction while the ion generation unit 129 is operating (that is, in a state where the soft X-ray 129a is being emitted), the ionized gas is sent into the space below the planar template 12 along with the air flow 171. As a result, the charge removal effect can be improved.

[0051] FIG. 7(b) shows an example in which the ion generation unit 129 is disposed on the same side as the carry-out position P2 with respect to the processing position P1. That is, in FIG. 7(b), the ion generation unit 129 is disposed on the side of the mold holding unit 122 in the same direction (-X direction) as the direction in which the stage 131 (substrate 11) moves from below the planar template 12 held by the mold holding unit 122. In this case, the airflow generation unit 170 may be arranged to generate an airflow 172 that travels in the same direction (+X direction) as the emission direction of the soft X-rays 129a from the ion generation unit 129.

[0052] FIG. 8(a) shows an example in which two ion generation units 129 are arranged so as to sandwich the processing position P1 in the X direction. In this case, each ion generation unit 129 may be arranged such that the soft X-rays 129a travel through the center of the gap between the planar template 12 and the substrate 11. Further, in the example of FIG. 8(a), if the charge removal ability of one of the two ion generation units 129 that is closer to the planar template 12 is made higher than the charge removal ability of the other, the charge removal effect of the planar template 12 can be improved. Here, when the airflow generation unit 170 is provided in the example of FIG. 8(a), the airflow generation unit 170 may be arranged so as to generate an airflow that travels in the same direction as the emission direction of the soft X-rays 129a from the one of the two ion generation units 129 that is closer to the planar template 12.

[0053] FIG. 8(b) shows an example in which, in addition to the ion generation unit 129 that is disposed at a position on the opposite side of the carry-out position P2 across the processing position P1 and emits soft X-rays 129a in the -X direction, an ion generation unit 129' that emits soft X-rays 129a in the +Z direction is provided. The ion generation unit 129' is disposed on the stage 131. Thereby, when the stage 131 (substrate 11) moves from below the planar template 12 held by the mold holding unit 122, the ion generation unit 129' can ionize the gas around the planar template 12. Further, the gas ionized by the ion generation unit 129' can be drawn below the planar template 12 as the stage 131 moves from below the planar template 12. That is, the charge removal effect of the planar template 12 can be improved.

[0054] Thus, it is desirable that the ion generation unit 129 be arranged in any of the forms shown in FIGS. 7(a)-(b) and FIGS. 8(a)-(b) described above. Further, in the present embodiment, the ion generation unit 129 is not limited to one, and a plurality of ion generation units 129 may be provided in the second processing unit 120. Furthermore, in the present embodiment, an air flow generation unit 170 that generates an air flow in the atmosphere where the separation process is performed in the second processing unit 120 may be provided. The air flow generation unit 170 is preferably arranged to generate an air flow from the ion generation unit 129 toward below the planar template 12. Thereby, the gas ionized by the ion generation unit 129 can be effectively sent below the planar template 12, and the charge removal of the planar template 12 can be performed more efficiently.

[0055] Here, when the ion generation unit 129 is, for example, a soft X-ray ionizer, the shorter the distance between the flat template 12 and the substrate 11 (hereinafter sometimes referred to as the gap distance), the longer the charge removal time tends to be. The charge removal time is known to increase in proportion to the square of the distance between the ion generation unit 129 (ionizer) and the flat template 12 which is the object to be charge-removed, that is, the distance that the soft X-rays emitted from the ion generation unit 129 travel (hereinafter sometimes referred to as the irradiation distance). This is because the soft X-rays are ionized by colliding with atoms and molecules in the gas, and the energy required for the ionization of the soft X-rays gradually decreases. Also, the charge removal ability of the ion generation unit 129 (ionizer) depends on the tube current, and the higher the tube current, the faster the charge removal speed of the object to be charge-removed. Therefore, it is preferable to adjust the gap distance, the irradiation distance, and the tube current so as to achieve the optimum charge removal conditions. For example, if the tube current is increased, since the charge removal ability is improved, the gap distance may be reduced or the irradiation distance may be increased so as to be advantageous for the design. Similarly, if the gap distance is increased, since the gas is efficiently ionized and charge-removed, the tube current may be reduced or the irradiation distance may be increased. Note that the tube voltage of the ion generation unit 129 (ionizer) is desirably 4.5 kV or more.

[0056] Also, as shown in FIG. 9, the second processing unit 120 of the present embodiment may include a potential measurement unit 180 that measures the surface potential of the planar template 12 charged by peeling electrification. With this potential measurement unit 180, the polarity and magnitude of the peeling electrification generated on the planar template 12 can be measured. For example, as shown in FIG. 9(a), the potential measurement unit 180 can be disposed on the base 133 below the planar template 12 held by the mold holding unit 122. In this case, the potential measurement unit 180 can measure the surface potential of the planar template 12 when the stage 131 moves and the stage 131 disappears from below the planar template 12. Alternatively, as shown in FIG. 9(b), the potential measurement unit 180 may be disposed on the stage 131. In this case, the potential measurement unit 180 is disposed below the planar template 12 by the movement of the stage 131, and in this state, the surface potential of the planar template 12 can be measured. By providing the potential measurement unit 180 in the second processing unit 120 in this way, the control unit CNT can determine the timing to stop the ionization of the gas by the ion generation unit 129 based on the measurement result of the potential measurement unit 180. For example, when the measured value of the potential of the planar template 12 by the potential measurement unit 180 is less than the threshold value (less than 100 V as an example), the control unit CNT can stop the ionization of the gas by the ion generation unit 129. On the other hand, when the measured value of the potential of the planar template 12 by the potential measurement unit 180 is equal to or greater than the threshold value (100 V or more as an example), the control unit CNT can continue the ionization of the gas by the ion generation unit 129. Note that the potential measurement unit 180 may be provided outside the second processing unit 120.

[0057] As described above, the planarization apparatus 100 of the present embodiment includes a first processing unit 110 that performs a curing process, a second processing unit 120 that performs a separation process, and a transport mechanism 130 that transports the substrate 11 on which the curing process has been performed by the first processing unit 110 to the second processing unit 120. And the second processing unit 120 has an ion generation unit 129 that ionizes the gas around the substrate 11 and the planar template 12 in the separation process. Thereby, static elimination of the planar template 12 in which peeling electrification has occurred in the planarization process (separation process) can be performed.

[0058] <Other Embodiments> In the above embodiment, an example in which the second processing unit 120 is configured to perform both the contact process and the separation process has been described. However, the present invention is not limited to this, and the second processing unit 120 may be configured to perform only the separation process. In this case, as shown in FIG. 10(a), a third processing unit 190 that performs a contact process may be provided in the planarization apparatus 100 as a separate body from the second processing unit 120. The third processing unit 190 may have the same configuration as the second processing unit. Thus, in the planarization apparatus 100 having the third processing unit in addition to the first processing unit 110 and the second processing unit 120, after the contact process is performed by the third processing unit 190, the substrate 11 on which the contact process has been performed is transported to the first processing unit 110 by the transport mechanism 130. Then, after the curing process is performed by the first processing unit 110, the substrate 11 on which the curing process has been performed is transported to the second processing unit 120 by the transport mechanism 130. In the second processing unit 120, a separation process is performed. In the planarization apparatus 100 having the third processing unit 190, the ion generation unit 129 may be provided only in the second processing unit 120.

[0059] Also, in the above embodiment, an example in which the transport mechanism 130 is configured by the stage 131 and the substrate driving unit 132 has been described. However, the present invention is not limited to this, and the transport mechanism 130 may have a configuration including a hand 134 that holds the substrate 11 and a driving unit 135 that drives the hand 134, as shown in FIG. 10(b). In this case, the transport mechanism 130 may be provided outside the first processing unit 110 and the second processing unit 120.

[0060] <Embodiment of Article Manufacturing Method> The article manufacturing method according to an embodiment of the present invention is suitable for manufacturing articles such as microdevices such as semiconductor devices and elements having a fine structure. The article manufacturing method of the present embodiment includes a planarization step of planarizing a composition on a substrate using the above-described planarization device, a processing step of processing the substrate that has undergone the planarization step, and a manufacturing step of manufacturing an article from the substrate that has undergone the processing step. Further, such a manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The article manufacturing method of the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

[0061] In the planarization step, a mold (flat template) having a flat surface on which no uneven pattern is formed is used, and a planarization process is performed to planarize the composition on the substrate by the flat surface of the flat template. The planarization process includes curing the curable composition by irradiation with light or by heating in a state where the flat surface of the flat template is in contact with the curable composition supplied onto the substrate. Such a planarization process (planarization step) can be applied by the above-described planarization device that planarizes the composition on the substrate using the flat template.

[0062] The underlying pattern on the substrate has an uneven profile due to the pattern formed in the previous process. In particular, with the recent multi-layer structuring of memory elements, the substrate (process wafer) may have a step of around 100 nm. The step caused by the gentle undulation of the entire substrate can be corrected by the focus tracking function of the exposure apparatus (scanner) used in the photolithography process. However, the fine unevenness within the pitch that fits within the exposure slit area of the exposure apparatus consumes the depth of focus (DOF) of the exposure apparatus as it is. As a conventional technique for planarizing the underlying pattern of the substrate, techniques for forming a planarizing layer such as SOC (Spin On Carbon) and CMP (Chemical Mechanical Polishing) are used. However, in the conventional technique, as shown in Fig. 11(a), at the boundary between the isolated pattern region A and the repetitive Dense (dense line & space pattern) pattern region B, only an unevenness suppression rate of 40% to 70% can be obtained, and sufficient planarization performance cannot be obtained. Also, in the future, the unevenness difference of the underlying pattern due to multi-layerization tends to increase further.

[0063] As a solution to this problem, U.S. Patent No. 9,415,418 proposes a technique for forming a continuous film by applying a resist serving as a planarizing layer with an inkjet dispenser and pressing it with a planar template. Also, U.S. Patent No. 8,394,282 proposes a technique for reflecting the topographic measurement results on the substrate side in the density information for each position where the application is instructed by an inkjet dispenser. The above planarizing apparatus can be particularly applied for performing local planarization within the substrate surface by pressing a planar template as a mold against the pre-applied uncured resist.

[0064] Fig. 11(a) shows the substrate before planarization. In the isolated pattern region A, the area of the pattern convex portion is small. In the repetitive Dense pattern region B, the area occupied by the pattern convex portion and the area occupied by the pattern concave portion are 1:1. The average height of the isolated pattern region A and the repetitive Dense pattern region B becomes different values depending on the ratio of the pattern convex portion.

[0065] Figure 11(b) shows a state in which a resist for forming a planarization layer is applied to a substrate. Figure 11(b) shows a state in which the resist is applied by an inkjet dispenser based on the technology proposed in U.S. Patent No. 9,415,418, but a spin coater may also be used for applying the resist. In other words, if a step of pressing a planar template against the pre-applied uncured resist for planarization is included, the above planarization apparatus can be applied.

[0066] As shown in Figure 11(c), the planar template is made of glass or quartz that transmits ultraviolet rays, and the resist is cured by irradiation with ultraviolet rays from a light source. The planar template follows the profile of the substrate surface for the gentle unevenness of the entire substrate. Then, after the resist is cured, as shown in Figure 11(d), the planar template is separated from the resist.

[0067] <Summary of the Embodiment> The disclosure of this specification includes at least the following planarization apparatus and article manufacturing method. (Item 1) A planarization apparatus for planarizing a composition on a substrate using a member having a flat surface, a first processing unit that performs a curing process for curing the composition in a contact state where the flat surface of the member is in contact with the composition on the substrate; a second processing unit that performs a separation process for separating the member from the composition on the substrate with respect to the substrate in the contact state where the curing process has been performed by the first processing unit; a transport mechanism that transports the substrate on which the curing process has been performed by the first processing unit to the second processing unit; comprising The second processing unit has an ion generation unit that ionizes gas around the substrate in the contact state, and the planarization apparatus is characterized by this. (Item 2) The ion generation unit starts ionization of the gas around the substrate in the contact state after the substrate is transported from the first processing unit to the second processing unit by the transport mechanism. The planarization apparatus according to item 1, characterized in that. (Item 3) The ion generation unit starts ionization of the gas around the substrate in the contact state before the separation process starts. The planarization apparatus according to item 2, characterized in that. (Item 4) The second processing unit has a holding unit that holds the member in contact with the composition on the substrate. The separation process includes a holding operation of holding the member by bringing the holding unit close to the member in contact with the composition on the substrate, and after the holding operation, a separation operation of separating the member from the composition on the substrate by moving the holding unit away from the substrate. The ion generation unit starts ionization of the gas around the substrate in the contact state before the holding operation starts. The planarization apparatus according to item 2 or 3, characterized in that. (Item 5) In the second processing unit, the separation process is performed while the substrate is disposed at the processing position, and after the separation process is completed, the substrate is moved from the processing position so that the substrate is disposed at an unloading position for unloading the substrate from the second processing unit. The ion generation unit is disposed at a position on the side opposite to the unloading position with the processing position interposed therebetween. The planarization apparatus according to any one of items 1 to 4, characterized in that. (Item 6) The ion generation unit continues ionization of the gas until the substrate is disposed at the unloading position. The planarization apparatus according to item 5, characterized in that. (Item 7) The ion generation unit includes an ejection unit that ejects soft X-rays. The planarization apparatus according to any one of items 1 to 6, characterized in that. (Item 8) The transfer mechanism includes a stage that can move the substrate between the first processing unit and the second processing unit while holding the substrate. The planarization apparatus according to any one of Items 1 to 7, characterized in that. (Item 9) The second processing unit is configured to further perform a contact process of bringing the member into contact with the composition on the substrate before the curing process is performed in the first processing unit. The transfer mechanism transports the substrate on which the contact process has been performed in the second processing unit to the first processing unit, and transports the substrate on which the curing process has been performed in the first processing unit to the second processing unit. The planarization apparatus according to any one of Items 1 to 8, characterized in that. (Item 10) The apparatus further includes a third processing unit configured to perform a contact process of bringing the member into contact with the composition on the substrate. The transfer mechanism transports the substrate on which the contact process has been performed in the third processing unit to the first processing unit, and transports the substrate on which the curing process has been performed in the first processing unit to the second processing unit. The planarization apparatus according to any one of Items 1 to 8, characterized in that. (Item 11) A planarization step of planarizing a composition on a substrate using the planarization apparatus according to any one of Items 1 to 10, A processing step of processing the substrate that has undergone the planarization step, A manufacturing step of manufacturing an article from the substrate that has undergone the processing step, An article manufacturing method characterized by including.

[0068] The invention is not limited to the above embodiments, and various changes and modifications are possible without departing from the spirit and scope of the invention. Therefore, claims are attached to disclose the scope of the invention.

Description of Reference Numerals

[0069] 11: Substrate, 12: Flat template, 13: Composition, 100: Planarization device, 110: First processing unit, 112: Hardening unit, 120: Second processing unit, 122: Mold holding unit, 123: Mold driving unit, 129: Ion generation unit, 130: Conveying mechanism, 131: Stage, 132: Substrate driving unit

Claims

1. A planarization apparatus for planarizing a composition on a substrate using a member having a flat surface, comprising: a first processing unit configured to perform a curing process for curing the composition in a contact state where the flat surface of the member is in contact with the composition on the substrate; a second processing unit configured to perform a separation process for separating the member from the composition on the substrate with respect to the substrate in the contact state on which the curing process has been performed by the first processing unit; a transport mechanism configured to transport the substrate on which the curing process has been performed by the first processing unit to the second processing unit; wherein the second processing unit includes an ion generation unit configured to ionize gas around the substrate in the contact state, and the planarization apparatus is characterized in that.

2. The ion generation unit starts ionizing the gas around the substrate in the contact state after the substrate is transported from the first processing unit to the second processing unit by the transport mechanism, and the planarization apparatus according to claim 1 is characterized in that.

3. The ion generation unit starts ionizing the gas around the substrate in the contact state before the separation process starts, and the planarization apparatus according to claim 2 is characterized in that.

4. The second processing unit includes a holding unit configured to hold the member in contact with the composition on the substrate, the separation process includes a holding operation of bringing the holding unit close to the member in contact with the composition on the substrate to hold the member by the holding unit, and after the holding operation, a separation operation of separating the member from the composition on the substrate by moving the holding unit away from the substrate, the ion generation unit starts ionizing the gas around the substrate in the contact state before the holding operation starts, and the planarization apparatus according to claim 2 is characterized in that.

5. In the second processing unit, the separation process is performed with the substrate disposed at a processing position, and after the separation process is completed, the substrate is moved from the processing position so that the substrate is disposed at an unloading position for unloading the substrate from the second processing unit, the ion generation unit is disposed at a position on the side opposite to the unloading position with the processing position interposed therebetween, and the planarization apparatus according to claim 1 is characterized in that.

6. The ion generation unit continues ionizing the gas until the substrate is disposed at the unloading position, and the planarization apparatus according to claim 5 is characterized in that.

7. The ion generation unit includes an ejection unit that ejects soft X-rays. The planarization apparatus according to claim 1, characterized in that.

8. The transfer mechanism includes a stage movable over the first processing unit and the second processing unit while holding the substrate. The planarization apparatus according to claim 1, characterized in that.

9. The second processing unit is configured to further perform a contact process of bringing the member into contact with the composition on the substrate before the curing process is performed in the first processing unit. The transfer mechanism transfers the substrate on which the contact process has been performed in the second processing unit to the first processing unit, and transfers the substrate on which the curing process has been performed in the first processing unit to the second processing unit. The planarization apparatus according to claim 1, characterized in that.

10. The apparatus further includes a third processing unit that performs a contact process of bringing the member into contact with the composition on the substrate. The transfer mechanism transfers the substrate on which the contact process has been performed in the third processing unit to the first processing unit, and transfers the substrate on which the curing process has been performed in the first processing unit to the second processing unit. The planarization apparatus according to claim 1, characterized in that.

11. A planarization step of planarizing a composition on a substrate using the planarization apparatus according to any one of claims 1 to 10. A processing step of processing the substrate that has undergone the planarization step. A manufacturing step of manufacturing an article from the substrate that has undergone the processing step. An article manufacturing method, characterized by including.

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