Manufacturing method of composite circuit board structure and composite circuit board structure

Abstract

To provide a manufacturing method of a composite circuit board structure and a composite circuit board structure, which is unlikely to affect the precision of a thin circuit layer and is unlikely to cause short-circuit problems.SOLUTION: A method for manufacturing a composite circuit board structure includes preparing, patterning, sputtering, shielding, electroplating, and chemical etching steps. The electroplating step electroplates a first sputtered layout block of a first sputtered conductor layer to form a first electroplated layer connected to the first sputtered layout block. The chemical etching step removes the first shielding layer and the shielded first sputtered conductor layer, and leaves the first electroplated layer and the first sputtered layout block connected thereto to collectively define a first thin circuit layer.SELECTED DRAWING: Figure 7

Description

Technical Field

[0001] The present invention relates to a circuit board, and more particularly to a composite circuit board structure and a method for manufacturing the same.

Background Art

[0002] Many conventional ceramic circuit boards need to use chemical etching to form metal circuits.

Summary of the Invention

Problems to be Solved by the Invention

[0003] However, chemical etching is affected by the lateral etching of the metal circuit, making it difficult to maintain accuracy and prone to short circuits. Furthermore, existing ceramic circuit boards also have the problem that they need to be adapted to circuits of different thicknesses according to their subsequent uses.

[0004] In view of such problems, the present invention aims to improve the above-mentioned drawbacks, concentrate on research, apply scientific principles, and finally be rationally designed to effectively improve the above-mentioned problems.

Means for Solving the Problems

[0005] In view of the above problems, the present invention has the following configuration. A manufacturing method of a composite circuit board structure including a preparation step, a patterning step, a sputtering step, a shielding step, an electroplating step, and a chemical etching step, wherein the preparation step provides a metallized ceramic substrate, and the metallized ceramic substrate includes a ceramic plate body, a first metal layer, and a second metal layer. The ceramic plate body has a first plate surface and a second plate surface located on opposite sides respectively. The first metal layer and the second metal layer form the first plate surface and the second plate surface of the ceramic plate body respectively. The patterning step patterns the first metal layer, removes a part of the first metal layer to form a first thick circuit layer, the thickness of the first thick circuit layer is 200 μm or more, and a part of the first plate surface is exposed outside the first thick circuit layer to define a first processing area. The sputtering step sputters the first processing area of the ceramic plate body to form a first sputtering conductor layer. The shielding step forms a first shielding layer on the first sputtering conductor layer, and the first shielding layer has a first patterned slot. A part of the first sputtering conductor layer is exposed outside the first shielding layer from the first patterned slot to define a first sputtering layout block. The electroplating step electroplates the first sputtering layout block of the first sputtering conductor layer to form a first electroplated layer connected to each other in the first sputtering layout block. The chemical etching step removes the first shielding layer and the shielded first sputtering conductor layer, and jointly defines a first thin circuit layer by leaving the first electroplated layer and the first sputtering layout block connected to it, and the thickness of the first thin circuit layer is between 1 μm and 150 μm.

[0006] In addition, the first thin circuit layer includes a plurality of circuits, and the line distance between any two adjacent circuits or the line width of any one of the circuits is between 30 μm and 60 μm, which is the lower limit value that can be formed after the shielding step, the electroplating step, and the chemical etching step.

[0007] Also, the thickness of the first sputtering-type layout block is between 0.1 μm and 1 μm, and the material of the first electroplating layer is made different from that of the first sputtering-type layout block, so that the first electroplating layer is not subjected to lateral etching in the chemical etching step.

[0008] Also, in the patterning step, the second metal layer is patterned and a part of it is removed to form a second thick circuit layer, the thickness of which is 200 μm or more.

[0009] Also, in the patterning step, a part of the second plate surface is exposed outside the second thick circuit layer to define a second processing area. In the sputtering step, the second processing area is sputtered to form a second sputtering conductor layer. In the shielding step, a second shielding layer is formed on the second sputtering conductor layer.

[0010] Also, in the chemical etching step, the second shielding layer and the second sputtering conductor layer are removed to expose the second processing area to the outside.

[0011] Also, in the shielding step, the second shielding layer is provided with a second patterned slot, and a part of the second sputtering conductor layer is exposed from the second patterned slot to the outside of the second shielding layer to define a second sputtering-type layout block. In the electroplating step, the second sputtering-type layout block is electroplated to form a second electroplating layer connected to each other. In the chemical etching step, the second shielding layer and the second sputtering conductor layer shielded by it are removed, and the second electroplating layer and the second sputtering-type layout block connected to each other are removed to jointly define a second thin circuit layer.

[0012] In the preparation step, the metallized ceramic substrate is a direct-bonded copper ceramic substrate, and the first metal layer and the second metal layer are sintered and fixed on the first plate surface and the second plate surface of the ceramic plate body, respectively.

[0013] In the preparation step, the metallized ceramic substrate is an active metal brazed ceramic substrate, and the first metal layer and the second metal layer are brazed and fixed on the first plate surface and the second plate surface of the ceramic plate body, respectively.

[0014] In a composite circuit board structure including a ceramic plate body, a first thick circuit layer, and a first thin circuit layer, the ceramic plate body has a first plate surface and a second plate surface located on opposite sides, respectively. The first thick circuit layer is formed on the first plate surface of the ceramic plate body, and the thickness of the first thick circuit layer is 200 μm or more. A part of the first plate surface is exposed outside the first thick circuit layer to define a first processing area. The first thin circuit layer is formed in the first processing area of the first plate surface, and the thickness of the first thin circuit layer is between 1 μm and 150 μm. The first thin circuit layer includes a first sputtering layout block connected to each other on the first plate surface and a first electroplating layer connected to each other in the first sputtering layout block, and the material of the first electroplating layer is different from the material of the first sputtering layout block.

[0015] The first thick circuit layer and the first thin circuit layer are arranged at intervals from each other.

[0016] The composite circuit board structure includes at least one lateral joint formed on the first plate surface, and at least one of the lateral joints is connected to each other between the first thick circuit layer and the first thin circuit layer.

[0017] Also, the thickness of at least one of the lateral joints gradually decreases in the direction from the first thick circuit layer to the first thin circuit layer.

[0018] Also, the composite circuit board structure further includes a second thick circuit layer, the second thick circuit layer is formed on the second plate surface of the ceramic plate body, and the thickness of the second thick circuit layer is 200 μm or more.

[0019] Also, a part of the second plate surface is exposed outside the second thick circuit layer to define a second processing area, the composite circuit board structure further includes a sputtering type circuit layer, and the sputtering type circuit layer is formed in the second processing area of the second plate surface, and the thickness of the sputtering type circuit layer is between 0.1 μm and 1 μm.

[0020] Also, the first thick circuit layer and the second thick circuit layer are sintered and fixed to the first plate surface and the second plate surface of the ceramic plate body respectively.

[0021] Also, the first thick circuit layer and the second thick circuit layer are brazed and fixed to the first plate surface and the second plate surface of the ceramic plate body respectively.

[0022] Also, the first thin circuit layer is formed on a projection area formed by orthogonally projecting the second thick circuit layer onto the first plate surface.

[0023] Also, the first thin circuit layer includes a plurality of circuits, and the lower limit value that can be formed in the line distance between any two adjacent circuits or the line width of any one of the circuits is between 30 μm and 60 μm.

[0024] Also, in a composite circuit board structure including a ceramic plate body, a first thick circuit layer, and a sputtering type circuit layer, the ceramic plate body has a first plate surface and a second plate surface located on opposite sides respectively. The first thick circuit layer is formed on the first plate surface of the ceramic plate body, and the thickness of the first thick circuit layer is 200 μm or more. A part of the first plate surface is exposed outside the first thick circuit layer to define a first processing area. The sputtering type circuit layer forms the first processing area on the first plate surface of the first plate surface, and the thickness of the sputtering type circuit layer is between 0.1 μm and 1 μm.

Effect of the Invention

[0025] As described above, according to the composite circuit board structure and its manufacturing method disclosed in the embodiments of the present invention, the adopted steps and structure are such that only a small amount of lateral etching is formed in the sputtering type layout block (or sputtering type circuit layer). Therefore, it is difficult to affect the accuracy of the thin circuit layer (or sputtering type circuit layer), and the problem of short circuit is also unlikely to occur. The first thick circuit layer and the first thin circuit layer (or sputtering type circuit layer) can be accurately formed in the above steps and can also meet different requirements.

Brief Description of the Drawings

[0026]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

Figure 6

Figure 7

Figure 8

Figure 9

Figure 10

Figure 11

Figure 12

Figure 13

Figure 14

Figure 15

Embodiments for Carrying Out the Invention

[0027] In order to further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, these detailed descriptions and drawings are only used to explain the present invention, and are not intended to limit the scope of the embodiments of the present invention, and the protection scope of the present invention is not limited thereto.

[0028] The following describes the embodiments of the "composite circuit board structure and its manufacturing method" described in the present invention. Those skilled in the art can understand the advantages and effects of the present invention from the content described in this specification.

[0029] The present invention may be implemented or applied through other different specific embodiments. Various detailed descriptions in this specification can be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. Also, the drawings of the present invention are merely for illustrative purposes as described above and are not drawn based on actual dimensions. In the following embodiments, the technical content related to the present invention will be described in more detail. However, the content described in the present invention does not limit the technical scope of the present invention.

[0030] In this specification, terms such as "first", "second", "third", etc. may be used to describe various components or signals. However, these components or signals should not be limited by these terms, and these terms are mainly used to distinguish one component from another component, or one signal from another signal. Further, the term "or" described in this specification includes any one or a combination of more than one of the related items according to the actual situation.

[0031] <The First Embodiment> The first embodiment of the present invention will be described with reference to FIGS. 1 to 10. Here, FIGS. 1 to 7 show a manufacturing method S100 of a composite circuit board structure according to an embodiment of the present invention, which includes or implements a preparation step S110, a patterning step S120, a sputtering step S130, a shielding step S140, an electroplating step S150, and a chemical etching step.

[0032] In this embodiment, a plurality of steps S110 to S160 of the manufacturing method S100 of the composite circuit board structure will be described in sequence below, and the composite circuit board structure 100 is manufactured, but the present invention is not limited thereto. For example, in other embodiments not shown in the present invention, the above steps S110 to S160 of the manufacturing method S100 of the composite circuit board structure can be added, deleted, or adjusted according to the design requirements.

[0033] Next, this embodiment will be described with reference to FIGS. 1 and 2. Here, FIG. 1 is a flowchart of a method for manufacturing a composite circuit board structure according to the first embodiment of the present invention, FIG. 2 is an explanatory diagram of the preparation step in FIG. 1, and is also a cross-sectional view of the composite circuit board structure 100.

[0034] As shown in FIGS. 1 and 2, in the preparation step, a metallized ceramic substrate 1 is prepared. The metallized ceramic substrate 1 includes a ceramic plate body 13, and a first metal layer 11 and a second metal layer 12 formed on both surfaces of the ceramic plate body 13, respectively.

[0035] That is, the ceramic plate body 13 has a first plate surface 131 and a second plate surface 132 located on opposite sides, respectively. And the first metal layer 11 and the second metal layer 12 are formed on the first plate surface 131 and the second plate surface 132, respectively.

[0036] In the preparation step S110, the metallized ceramic substrate 1 may be a direct bonded copper (DBC) ceramic substrate, and the first metal layer 11 and the second metal layer 12 are sintered and fixed to the first plate surface 131 and the second plate surface 132 of the ceramic plate body 13. That is, in this embodiment, the first metal layer 11 and the second metal layer 12 are fixed to the ceramic plate body 13 via connection layers 14 (for example, sintered layers), respectively.

[0037] Alternatively, in the preparation step S110, the metallized ceramic substrate 1 may be an active metal brazing (AMB) ceramic substrate. And the first metal layer 11 and the second metal layer 12 are brazed and fixed to the first plate surface 131 and the second plate surface 132 of the ceramic plate body 13, respectively. That is, in this embodiment, the first metal layer 11 and the second metal layer 12 are fixed to the ceramic plate body 13 via connection layers 14 (brazing layers, etc.), respectively.

[0038] Next, a description will be given with reference to FIGS. 1 to 3. Here, FIG. 3 is an explanatory diagram of the patterning step in FIG. 1 and is a cross-sectional view for explaining the patterning step.

[0039] The patterning step S120 patterns the first metal layer 11 and the second metal layer 12 shown in FIG. 2, removes a part of the first metal layer 11 to form the first thick circuit layer 111 shown in FIG. 3, and further partially removes the second metal layer 12 shown in FIG. 2 to form the second thick circuit layer 121 shown in FIG. 3. Also, the first thick circuit layer 111 and the second thick circuit layer 121 can have different patterns (or thicknesses) from each other, but are not limited thereto.

[0040] For example, in other embodiments not shown in the present invention, the manufacturing method S100 of the composite circuit board structure can omit the patterning of the second metal layer 12 shown in FIG. 2 (that is, the second metal layer 12 can maintain its original structure without forming the second thick circuit layer 121 shown in FIG. 3).

[0041] Specifically, the patterning method of the first metal layer 11 and the second metal layer 12 shown in FIG. 2 can be realized by film sticking, exposure, development, etc., but is not limited thereto. Further, the thickness of the first thick circuit layer 111 and the thickness of the second thick circuit layer 121 shown in FIG. 3 are each greater than 200 micrometers (μm). A part of the first board surface 131 is exposed outside the first thick circuit layer 111 and is defined as the first processing area 1311, and a part of the second board surface 132 is exposed outside the second thick circuit layer 121 and is defined as the second processing area 1321.

[0042] The sputtering step S130 will be described with reference to FIGS. 1, 3, and 4. Here, FIG. 4 is an explanatory diagram of the sputtering step in FIG. 1 and is a cross-sectional view of the composite circuit board structure 100. In the processing area 1311 of the ceramic plate body 13, the first sputtering conductor layer 2 is formed by sputtering, and in the second processing area 1321, the second sputtering conductor layer 3 is formed by sputtering, but the present invention is not limited thereto.

[0043] For example, in other embodiments not shown in the present invention, in the patterning step S120, when the second metal layer 12 shown in FIG. 2 is not patterned, the manufacturing method S100 of the composite circuit board structure does not form the second processing area 1321 and the second sputtering conductor layer 3 on its surface.

[0044] Specifically, the material of the first sputtering conductor layer 2 is the same as the material of the second sputtering conductor layer 3, and the thickness of the first sputtering conductor layer 2 and the thickness of the second sputtering conductor layer 3 are each between 0.1 micron and 1 micron.

[0045] Next, the shielding step S140 will be described with reference to FIGS. 1, 4, and 5. Here, FIG. 5 is an explanatory diagram of the shielding step in FIG. 1 and is a cross-sectional view of the composite circuit board structure 100. The first shielding layer 4 is formed on the first sputtering conductor layer 2, and the second shielding layer 5 is formed on the second sputtering conductor layer 3.

[0046] Here, the first shielding layer 4 has a first patterned slot 41, and a part of the first sputtering conductor layer 2 is exposed outside the first shielding layer 4 from the first patterned slot 41, and the first sputtering layout block 21 is defined, but the present invention is not limited thereto.

[0047] For example, as another embodiment not shown in the present invention, when the second metal layer 12 shown in FIG. 2 is not patterned, the manufacturing method S100 of the composite circuit board structure may not form the second shielding layer 5 covering the second sputtering conductor layer 3 shown in FIG. 5 according to the design requirements.

[0048] Next, the electroplating step S150 will be described with reference to FIGS. 1, 5, and 6. Here, FIG. 6 is an explanatory diagram of the electroplating step in FIG. 1 and is a cross-sectional view of the composite circuit board structure 100. The first sputtering layout block 21 of the first sputtering conductor layer 2 shown in FIG. 5 is electroplated, and a first electroplated layer 6 connected to the first sputtering layout block 21 is formed.

[0049] In this embodiment, the material of the first electroplated layer 6 is different from the material of the first sputtering layout block 21, and it is advantageous that the first electroplated layer 6 is not affected by lateral etching in the chemical etching step S160 described later.

[0050] Next, the chemical etching step S160 will be described with reference to FIGS. 1, 6, and 7. Here, FIG. 7 is an explanatory diagram of the chemical etching step in FIG. 1 and is a cross-sectional view of the composite circuit board structure 100.

[0051] The first shielding layer 4 shown in FIG. 6 and the first sputtering conductor layer 2 shielded by it are removed, and the first sputtering layout block 21 connected to the first electroplated layer 6 shown in FIG. 7 remains, and these are collectively defined as the first thin circuit layer C1.

[0052] Here, the thickness of the first thin circuit layer C1 ranges from 1 micron to 150 microns, and the thickness of the first sputtering layout block 21 ranges from 0.1 micron to 1 micron. Further, in the chemical etching step S160 in this embodiment, the second shielding layer 5 and the second sputtering conductor layer 3 shown in FIG. 6 are also removed, and the second processing area 1321 is exposed as shown in FIG. 7.

[0053] As described above, in the manufacturing method S100 of the composite circuit board structure, in the chemical etching step S160, only a small amount of lateral etching is formed in the first sputtering type layout block 21. Therefore, it hardly affects the accuracy of the first thin circuit layer C1, and it is difficult for the first thin circuit layer C1 to short-circuit. And the first thick circuit layer 111 and the first thin circuit layer C1 are accurately formed under the above-described process and can meet different requirements.

[0054] Specifically, in the present embodiment, the first thin circuit layer C1 may have a plurality of circuits (which may be understood as meaning lines or traces). And the line distance G between any two adjacent circuits C11, or the line width W of any one of the circuits C11, after being determined by the masking step S140 (for example, FIG. 5), the electroplating step S150 (for example, FIG. 6), and the chemical etching step S160 (for example, FIG. 7), the lower limit value (or minimum value) that can be formed is between 30 microns and 60 microns.

[0055] That is, the line distance G or the line width W of the first thin circuit layer C1 can be accurately maintained at a minimum value of 30 microns to 60 microns according to the design requirements, but it is not limited thereto.

[0056] As described above, in the present embodiment, the above content is used to schematically explain the implementation process of the manufacturing method S100 of the composite circuit board structure. Hereinafter, the specific structure of the composite circuit board structure 100 manufactured by the manufacturing method S100 of the composite circuit board structure will be introduced from the structural aspect. For this reason, some technical features of the composite circuit board structure 100 can refer to the content of the manufacturing method S100 of the composite circuit board structure, but the present invention is not limited thereto.

[0057] In the present embodiment, the composite circuit board structure 100 includes a ceramic plate body 13, a first thick circuit layer 111 and a first thin circuit layer C1 formed on the first plate surface 131, and a second thick circuit layer 121 formed on the second plate surface 132.

[0058] Here, the thickness of the first thick circuit layer 111 and the thickness of the second thick circuit layer 121 are the same, and each is not less than 200 microns, but is not limited thereto.

[0059] In this embodiment, the first thick circuit layer 111 and the second thick circuit layer 121 are sintered and fixed to the first plate surface 131 and the second plate surface 132 of the ceramic plate body 13 (via two connection layers 14), respectively. Alternatively, the first thick circuit layer 111 and the second thick circuit layer 121 are brazed and fixed to the first plate surface 131 and the second plate surface 132 of the ceramic plate body 13 (via two connection layers 14), respectively.

[0060] Specifically, the first processing area 1311 on the first plate surface 131 is not covered by the first thick circuit layer 111 and is not connected to the corresponding connection layer 14. Further, the second processing area 1321 on the second plate surface 132 is not covered by the second thick circuit layer 121 and is not connected to the corresponding connection layer 14.

[0061] Furthermore, a first thin circuit layer C1 is formed on the first processing area 1311 of the first plate surface 131, and the first thin circuit layer C1 and the first thick circuit layer 111 are arranged to be spaced apart from each other. In this embodiment, no circuit (line, wiring) is formed on the second processing area 1321 of the second plate surface 132.

[0062] Here, the first thin circuit layer C1 has a plurality of circuits C11, and the lower limit value that can be formed by the line distance G between any two adjacent circuits C11 or the line width W of any one of the circuits C11 is between 30 microns and 60 microns.

[0063] Furthermore, in this embodiment, the first thin circuit layer C1 includes a first sputtering-type layout block 21 connected to the first plate surface 131 and a first electroplating layer 6 connected to the first sputtering-type layout block 21, and the material of the first electroplating layer 6 is different from the material of the first sputtering-type layout block 21.

[0064] Here, the thickness of the first thin circuit layer C1 is between 1 micron and 150 microns, and the thickness of the first sputtering-type layout block 21 is between 0.1 micron and 1 micron.

[0065] Furthermore, although the composite circuit board structure 100 is described using the structure shown in FIG. 7 as an example, it can be adjusted and changed based on design requirements. For example, as shown in FIGS. 8 to 10, the structure in which the second thick circuit layer 121 is not patterned may be used. And the first thin circuit layer C1 is formed on the projection area formed by orthographically projecting the second thick circuit layer 121 onto the first board surface 131.

[0066] Furthermore, as shown in FIG. 9, the composite circuit board structure 100 includes a lateral joint C4 formed on the first board surface 131, and the lateral joint C4 is connected between the first thick circuit layer 111 and the first thin circuit layer C1. Here, the thickness of the lateral joint C4 gradually decreases from the first thick circuit layer 111 toward the first thin circuit layer C1. That is, the lateral joint C4 has a substantially trapezoidal cross-section.

[0067] Alternatively, as shown in FIG. 10, the composite circuit board structure 100 includes two lateral joints C4 formed on the first board surface 131. And each lateral joint C4 is connected between the first thick circuit layer 111 and the first thin circuit layer C1.

[0068] That is, the two lateral joints C4 are respectively connected to both sides of the first thick circuit layer 111 and are respectively connected to two circuits (lines, C11) of the first thin circuit layer C1 adjacent to the first thick circuit layer 111.

[0069] Here, the thickness of each lateral joint C4 gradually decreases from the first thick circuit layer 111 toward the first thin circuit layer C1. That is, the cross-section of each lateral joint C4 is substantially trapezoidal, and the two lateral joints C4 and the first thick circuit layer 111 are formed so as to embed the corresponding connection layer 14.

[0070] <Second Embodiment> Refer to FIG. 11, which is a second embodiment of the present invention. Here, FIG. 11 is an explanatory diagram of a composite circuit board structure according to the second embodiment of the present invention, and is a cross-sectional view of the composite circuit board structure 100.

[0071] This embodiment has many matters in common with the above-described first embodiment. Therefore, detailed descriptions of the common matters of both embodiments are omitted, and differences between this embodiment and the above-described first embodiment are schematically described.

[0072] In this embodiment, the first electroplating layer is not formed on the composite circuit board structure 100, and the first sputtering layout block 21 is the sputtering circuit layer C3. In other words, in this embodiment, the sputtering circuit layer C3 of the composite circuit board structure 100 is formed in the first processing area 1311 of the first plate surface 131. Also, the thickness of the sputtering circuit layer C3 is between 0.1 micron and 1 micron.

[0073] <Third Embodiment> Next, a third embodiment of the present invention will be described with reference to FIGS. 12 to 14. Here, FIG. 12 is an explanatory diagram of a shielding step of a manufacturing method of a composite circuit board structure according to the third embodiment of the present invention. FIG. 13 is an explanatory diagram of an electroplating step of a manufacturing method of a composite circuit board structure according to the third embodiment of the present invention. FIG. 14 is an explanatory diagram of a chemical etching step of a manufacturing method of a composite circuit board structure according to the third embodiment of the present invention.

[0074] This embodiment has many matters in common with the above-described first embodiment 1. Therefore, detailed descriptions of the common matters (patterning step, sputtering step) of both embodiments are omitted, and differences between this embodiment and the above-described first embodiment are schematically described.

[0075] In the masking step S140, as shown in FIG. 12, a first masking layer 4 is formed on the first sputtering conductor layer 2, and a second masking layer 5 is formed on the second sputtering conductor layer 3.

[0076] Here, the first masking layer 4 has a first patterned slot 41, and a part of the first sputtering conductor layer 2 is exposed from the first patterned slot 41 to the first masking layer 4 and is defined as a first sputtering type layout block 21.

[0077] Furthermore, the second masking layer 5 has a second patterned slot 51, and a part of the second sputtering conductor layer 3 is exposed outside the second masking layer 5 from the second patterned slot 51 and is defined as a second sputtering type layout block 31, but the present invention is not limited thereto.

[0078] The electroplating step S150 will be described with reference to FIGS. 12 and 13. As shown in FIGS. 12 and 13, the first sputtering type layout block 21 of the first sputtering conductor layer 2 and the second sputtering type layout block 31 of the second sputtering conductor layer 3 are electroplated to form a first electroplating layer 6 connected to the first sputtering type layout block 21 and a second electroplating layer 7 connected to the second sputtering type layout block 31. Here, the materials of the first electroplating layer 6 and the second electroplating layer 7 are the same and are different from the material of the first sputtering type layout block 21.

[0079] In the chemical etching step S160, as shown in FIGS. 13 and 14, the first masking layer 4 and the first sputtering conductor layer 2 are removed, the second masking layer 5 and the second sputtering conductor layer 3 shielded by it are removed, and the first sputtering type layout block 21 connected to the first electroplating layer 6 is left, and these are combined and defined as a first thin circuit layer C1. The second electroplating layer 7 and the second sputtering type layout block 31 connected thereto are also left, and these are collectively defined as a second thin circuit layer C2.

[0080] <Fourth Embodiment> Referring to FIG. 15, a fourth embodiment of the present invention will be described. Here, FIG. 15 is an explanatory diagram of a composite circuit board structure according to the fourth embodiment of the present invention, and is a cross-sectional view of the composite circuit board structure 100.

[0081] This embodiment has many common matters with the above-described third embodiment 3, so the common matters between the two embodiments will not be described again. The differences between this embodiment and the above-described third embodiment are as follows.

[0082] In this embodiment, the second electroplating layer 7 is not formed on the composite circuit board structure 100. And the second sputtering layout block 31 is used as the sputtering circuit layer C3. In other words, in this embodiment, the sputtering circuit layer C3 of the composite circuit board structure 100 is formed in the second processing area 1321 of the second board surface 132. Also, the thickness of the sputtering circuit layer C3 is between 0.1 micron and 1 micron.

[0083] Thus, the composite circuit board structure 100 in this embodiment can form three different types of circuits to meet more different needs. For example, the first thick circuit layer 111 formed by sintering or brazing, the first thin circuit layer C1 formed by sputtering and electroplating, and the sputtering circuit layer C3 formed by sputtering.

[0084] <Effects of the Embodiment of the Present Invention> As described above, the composite circuit board structure and its manufacturing method shown in the embodiments of the present invention adopt a process and structure in which only a small amount of lateral etching is performed in the first sputtering layout block (or sputtering circuit layer). Therefore, it hardly affects the accuracy of the first thin circuit layer (or sputtering circuit layer), and it is difficult to cause a short circuit. And the first thick circuit layer and the first thin circuit layer (or sputtering circuit layer) can be accurately formed under the above process steps to meet different requirements.

[0085] In addition, the above description is only a preferred embodiment of the present invention and does not limit the scope of the claims of the present invention. Therefore, all equivalent technical changes made using the content of the specification and drawings of the present invention also belong to the technical scope of the present invention.

Explanation of Reference Numerals

[0086] 100 Composite circuit board structure 1 Metallized ceramic substrate 11 First metal layer 111 First thick circuit layer 12 Second metal layer 121 Second thick circuit layer 13 Ceramic plate body 131 First plate surface 1311 First processing area 132 Second plate surface 1321 Second processing area 14 Connection layer 2 First sputtering conductor layer 21 First sputtering layout block 3 Second sputtering conductor layer 31 Second sputtering layout block 4 First shielding layer 41 First patterned slot 5 Second shielding layer 51 Second patterned slot 6 First electroplating layer 7th second electroplating layer C1 first thin circuit layer C11 circuit C2 second thin circuit layer C3 sputtering type circuit layer C4 horizontal joint G line distance W line width S100 manufacturing method of composite circuit board structure S110 preparation step S120 patterning step S130 sputtering step S140 masking step S150 electroplating step S160 chemical etching step

Claims

1. A method for manufacturing a composite circuit board structure, comprising the steps of preparing, patterning, sputtering, shielding, electroplating and chemical etching, comprising: The preparing step includes providing a metallized ceramic substrate; The metallized ceramic substrate includes a ceramic plate, a first metal layer, and a second metal layer; The ceramic plate has a first plate surface and a second plate surface located opposite each other, the first metal layer and the second metal layer respectively form the first plate surface and the second plate surface of the ceramic plate; The patterning step includes patterning the first metal layer and removing a local portion of the first metal layer to form a first thick circuit layer, the thickness of the first thick circuit layer is 200 μm or more, and a portion of the first board surface is exposed outside the first thick circuit layer to define a first processing area; The sputtering step includes sputtering the first processing area of ​​the ceramic plate to form a first sputtering conductor layer; the shielding step includes forming a first shielding layer on the first sputtered conductor layer, the first shielding layer having a first patterned slot, and exposing a portion of the first sputtered conductor layer from the first patterned slot outside the first shielding layer to define a first sputtered layout block; The electroplating step includes electroplating the first sputtered layout block of the first sputtered conductor layer to form a first electroplating layer connected to the first sputtered layout block; the chemical etching step removes the first shielding layer and the first sputtered conductor layer shielded therewith, leaving the first electroplated layer and the first sputtered layout blocks connected thereto to collectively define a first thin circuit layer, the first thin circuit layer having a thickness between 1 μm and 150 μm.

2. 2. The method for manufacturing a composite circuit board structure according to claim 1, wherein the first thin circuit layer comprises a plurality of circuits, and the line distance between any two adjacent circuits or the line width of any one of the circuits is within the lower limit of 30 μm to 60 μm after the shielding step, the electroplating step, and the chemical etching step.

3. 2. The method for manufacturing a composite circuit board structure according to claim 1, wherein the thickness of the first sputtered layout block is between 0.1 μm and 1 μm, and the material of the first electroplating layer is different from the material of the first sputtered layout block, so that the first electroplating layer is not etched laterally in the chemical etching step.

4. 2. The method of claim 1, wherein in the patterning step, the second metal layer is patterned and locally removed to form a second thick circuit layer, the thickness of which is 200 μm or more.

5. 5. The method for manufacturing a composite circuit board structure according to claim 4, wherein in the patterning step, a portion of the second board surface is exposed outside the second thick circuit layer to define a second processing area, in the sputtering step, the second processing area is sputtered to form a second sputtered conductor layer, and in the shielding step, a second shielding layer is formed on the second sputtered conductor layer.

6. 6. The method for manufacturing a composite circuit board structure according to claim 5, wherein in the chemical etching step, the second shielding layer and the second sputtering conductor layer are removed to expose the second processing area.

7. 6. The method for manufacturing a composite circuit board structure according to claim 5, wherein in the shielding step, the second shielding layer has a second patterned slot, and a portion of the second sputtered conductor layer is exposed outside the second shielding layer from the second patterned slot to define a second sputtered layout block; in the electroplating step, the second sputtered layout block is electroplated to form a second electroplated layer connected thereto; and in the chemical etching step, the second shielding layer and the second sputtered conductor layer it shields are removed, and the second electroplated layer and the second sputtered layout block connected thereto are removed to jointly define a second thin circuit layer.

8. 2. The method for manufacturing a composite circuit board structure according to claim 1, wherein in the preparation step, the metallized ceramic substrate is a direct bonded copper ceramic substrate, and the first metal layer and the second metal layer are sintered and fixed onto the first plate surface and the second plate surface of the ceramic plate, respectively.

9. 2. The method for manufacturing a composite circuit board structure according to claim 1, wherein in the preparation step, the metallized ceramic substrate is an active metal brazed ceramic substrate, and the first metal layer and the second metal layer are brazed and fixed to the first plate surface and the second plate surface of the ceramic plate, respectively.

10. 1. A composite circuit board structure including a ceramic board, a first thick circuit layer, and a first thin circuit layer, The ceramic plate has a first plate surface and a second plate surface located on opposite sides, the first thick circuit layer is formed on the first plate surface of the ceramic plate, and the thickness of the first thick circuit layer is 200 μm or more; a portion of the first board surface is exposed outside the first thick circuit layer to define a first processing area; The first thin circuit layer is formed on the first processing area of ​​the first plate surface, and the thickness of the first thin circuit layer is between 1 μm and 150 μm; The first thin circuit layer includes a first sputtering type layout block connected to the first board surface, and a first electroplating layer connected to the first sputtering type layout block, and the material of the first electroplating layer is different from the material of the first sputtering type layout block.

11. 11. The composite circuit board structure of claim 10, wherein the first thick circuit layer and the first thin circuit layer are spaced apart from each other.

12. 11. The composite circuit board structure of claim 10, wherein the composite circuit board structure includes at least one lateral joint formed on the first plate surface, and at least one of the lateral joints is connected to each other between the first thick circuit layer and the first thin circuit layer.

13. 13. The composite circuit board structure of claim 12, wherein a thickness of at least one of the lateral joints gradually decreases in a direction from the first thick circuit layer to the first thin circuit layer.

14. the composite circuit board structure further comprises a second thick circuit layer; the second thick circuit layer is formed on the second plate surface of the ceramic plate; 11. The composite circuit board structure of claim 10, wherein the second thick circuit layer has a thickness of 200 [mu]m or more.

15. A portion of the second board surface is exposed outside the second thick circuit layer to define a second processing area, and the composite circuit board structure further includes a sputtered circuit layer; 15. The composite circuit board structure of claim 14, wherein the sputtered circuit layer is formed on the second processing area of ​​the second board surface, and the thickness of the sputtered circuit layer is between 0.1 μm and 1 μm.

16. 15. The composite circuit board structure according to claim 14, wherein the first thick circuit layer and the second thick circuit layer are sintered and fixed to the first plate surface and the second plate surface of the ceramic plate, respectively.

17. 15. The composite circuit board structure of claim 14, wherein the first thick circuit layer and the second thick circuit layer are brazed and fixed to the first plate surface and the second plate surface of the ceramic plate, respectively.

18. 15. The composite circuit board structure according to claim 14, wherein the first thin circuit layer is formed on a projection area formed by orthogonally projecting the second thick circuit layer onto the first board surface.

19. 11. The composite circuit board structure according to claim 10, wherein the first thin circuit layer comprises a plurality of circuits, and the lower limit of the line distance between any two adjacent circuits or the line width of any one of the circuits is between 30 μm and 60 μm.

20. 1. A composite circuit board structure including a ceramic board, a first thick circuit layer, and a sputtered circuit layer, comprising: The ceramic plate has a first plate surface and a second plate surface located on opposite sides, The first thick circuit layer is formed on the first plate surface of the ceramic plate, and the thickness of the first thick circuit layer is 200 μm or more, and a portion of the first plate surface is exposed outside the first thick circuit layer to define a first processing area; 1. A composite circuit board structure, wherein the sputtered circuit layer forms the first processing area of ​​the first board surface, and the thickness of the sputtered circuit layer is between 0.1 μm and 1 μm.

Images