Semiconductor manufacturing apparatus and manufacturing method for semiconductor device

Abstract

To provide a semiconductor manufacturing apparatus that makes it possible to connect a semiconductor chip to a target object in a more appropriate manner.SOLUTION: A semiconductor manufacturing apparatus is for connecting a semiconductor chip to a target object and includes a collet and a holder. The collet is formed of an elastic material and is in contact with the semiconductor chip. The holder holds the collet. A recess is formed on the surface of the holder into which the collet is to be inserted. In a central part of the bottom surface of the recess, a protrusion protruding the most from the bottom surface of the recess as compared with other parts of the bottom surface of the recess is formed.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] Embodiments of the present invention relate to a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device.

Background Art

[0002] A semiconductor manufacturing apparatus for connecting a semiconductor chip to a substrate is known.

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0004] According to the disclosed embodiments, there are provided a semiconductor manufacturing apparatus and a method for manufacturing a semiconductor device that can more appropriately connect a semiconductor chip to an object.

Means for Solving the Problems

[0005] The semiconductor manufacturing apparatus according to the embodiment is a semiconductor manufacturing apparatus for connecting a semiconductor chip to an object, and includes a collet and a holder. The collet is formed of an elastic material and contacts the semiconductor chip. The holder holds the collet. A recess into which the collet is inserted is formed on the surface of the holder. A protruding portion having the largest protruding amount from the bottom surface of the recess is formed at the center of the bottom surface of the recess as compared with other portions of the bottom surface of the recess.

[0006] The method for manufacturing a semiconductor device according to the embodiment is a method for manufacturing a semiconductor device for connecting a semiconductor chip to an object, and uses the above-described semiconductor manufacturing apparatus to connect the semiconductor chip in contact with the collet to the object.

Brief Description of the Drawings

[0007]

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Mode for Carrying Out the Invention

[0008] Hereinafter, embodiments will be described with reference to the drawings. For ease of understanding of the description, the same reference numerals are given to the same components in each drawing as much as possible, and duplicate descriptions are omitted.

[0009] 1 First Embodiment The semiconductor manufacturing apparatus and the method for manufacturing a semiconductor device according to the first embodiment will be described.

[0010] 1.1 Outline of Semiconductor Manufacturing Apparatus FIG. 1 is a front view showing the front structure of the semiconductor manufacturing apparatus 10 according to the present embodiment. The semiconductor manufacturing apparatus 10 according to the present embodiment is an apparatus for connecting a semiconductor chip C onto a substrate M. The semiconductor chip C is a bare chip that is not packaged. The semiconductor manufacturing apparatus 10 is a so-called flip-chip bonding apparatus that picks up a semiconductor chip C formed on a predetermined wafer, then inverts the semiconductor chip C and bonds it to the substrate M.

[0011] Note that the semiconductor manufacturing apparatus 10 may be configured to connect the semiconductor chip C to a predetermined wafer instead of the substrate M. The substrate M and the wafer are an organic substrate having wiring formed on the upper surface, or a semiconductor element different from the semiconductor chip C. In the present embodiment, the substrate M and the wafer are an example of an object to which the semiconductor chip C is connected.

[0012] 1.2 Configuration of Semiconductor Manufacturing Apparatus Next, the configuration of the semiconductor manufacturing apparatus 10 will be specifically described.

[0013] FIG. 2 is a perspective view showing the perspective structure of the semiconductor manufacturing apparatus 10. As shown in FIG. 2, the semiconductor manufacturing apparatus 10 includes a holder 20 and a collet 30.

[0014] FIG. 3 is a perspective view showing the perspective structure of the holder 20. FIG. 4 is a plan view showing the planar structure of the holder 20. As shown in FIGS. 3 and 4, the holder 20 is formed in a thin rectangular parallelepiped shape. At the center of the surface 21 of the holder 20, a rectangular parallelepiped-shaped recess 22 into which the collet 30 is inserted is formed. Relief machining is performed on the corner portions 22a to 22d of the recess 22. Hereinafter, the thickness direction of the holder 20 is referred to as the "Z direction". Also, the short side direction of the recess 22 is referred to as the "X direction", and the longitudinal direction of the recess 22 is referred to as the "Y direction".

[0015] On the bottom surface 220 of the recess 22, a protrusion 23 and step portions 24 and 25 are formed. The protrusion 23 is formed substantially at the center of the bottom surface 220 of the recess 22. The protrusion 23 is formed in a substantially rectangular parallelepiped shape having a short side in the X direction and a long side in the Y direction. The step portion 24 is formed around the protrusion 23, is larger than the protrusion 23 in the X direction and the Y direction, and has a shape similar to that of the protrusion 23. The step portion 25 is formed around the step portion 24, is larger than the step portion 24 in the X direction and the Y direction, and has a shape similar to that of the step portion 24. The two-dot chain line L20 shown in FIG. 4 indicates the outer edge of the semiconductor chip C. As shown in FIG. 4, the step portion 25 has an outer edge slightly smaller than the outer edge of the semiconductor chip C.

[0016] FIG. 5 is a cross-sectional view showing a cross-sectional structure along the line V-V of FIG. 4. As shown in FIG. 5, if the protruding amount of the protruding portion 23 from the bottom surface 220 of the recess 22 is “H10”, the protruding amount of the step portion 24 is “H11”, and the protruding amount of the step portion 25 is “H12”, then the relationship “H10 > H11 > H12” holds for these protruding amounts H10 to H12. That is, the protruding portion, the step portion 24, and the step portion 25 have decreasing protruding amounts in this order.

[0017] Reference numerals 221 to 224 shown in FIGS. 3 and 4 indicate the side surfaces of the recess 22, respectively. In FIG. 5, the height of the side surface 222 from the bottom surface 220 of the recess 22 is indicated as “H20”. The other side surfaces 221, 223, and 224 also have the same height H20. The relationship “H10 < H20” holds between the protruding amount H10 of the protruding portion 23 and the height H20 of the side surfaces 221 to 224 of the recess 22. That is, the protruding portion 23 is formed lower than the height of the side surfaces 221 to 224 of the recess 22.

[0018] As shown in FIGS. 3 and 4, a plurality of ventilation holes 26a and 26b that open to the top surface 240 are formed in the step portion 24. The ventilation holes 26a and 26b are arranged side by side in the Y direction with the protruding portion 23 interposed therebetween. As shown in FIG. 5, the ventilation hole 26a is formed to extend from the step portion 24 into the interior of the holder 20. The same applies to the ventilation hole 26b.

[0019] As shown in FIGS. 3 and 4, side wall portions 271 to 274 are formed on the surface 21 of the holder 20 along the respective side surfaces 221 to 224 of the recess 22. The side wall portion 271 is formed flush with the side surface 221 of the recess 22 and protrudes from the surface 21 of the holder 20. The other side wall portions 272 to 274 are formed in the same manner.

[0020] As shown in FIG. 2, the collet 30 is formed in a thin rectangular parallelepiped shape having a short side in the X direction and a long side in the Y direction, corresponding to the concave portion 22 of the holder 20. The collet 30 is formed of a rubber elastic body mainly composed of natural rubber or synthetic rubber having a hardness of, for example, Shore A hardness Ha of 50 or more and Shore A hardness Ha of 100 or less. The Shore A hardness conforms to ISO868.

[0021] FIG. 6 is a cross-sectional view showing a cross-sectional structure along line VI-VI of FIG. 2, specifically, a cross-sectional structure including the vent hole 26a of the holder 20. As shown in FIG. 6, a protrusion 32 is formed on the surface 31 of the collet 30. As shown in FIG. 2, the protrusion 32 is formed in a substantially rectangular parallelepiped shape having a short side in the X direction and a long side in the Y direction. The protrusion 32 has substantially the same size as the semiconductor chip C in the X and Y directions. A plurality of through holes 33a and 33b opening to the top surface 320 are formed in the protrusion 32. As shown in FIG. 6, the through hole 33a is formed so as to pass through the inside of the collet 30 from the top surface 320 of the protrusion 32 and penetrate the back surface 34 of the collet 30 on the side opposite to the top surface 320. The through hole 33a is disposed at a position facing the vent hole 26a of the holder 20 in the Z direction. Similarly, the through hole 33b is formed so as to pass through the inside of the collet 30 and is disposed at a position facing the vent hole 26b of the holder 20 in the Z direction. Note that the reference numerals 35 to 38 shown in FIG. 2 respectively indicate the side surfaces of the collet 30.

[0022] As shown in FIG. 6, the collet 30 is inserted into the recess 22 of the holder 20. The rear surface 34 of the collet 30 is in contact with the top surface 230 of the protrusion 23 of the holder 20. The side surface 35 of the collet 30 is in contact with the side surface 221 of the recess 22 and the inner surface of the side wall portion 271. Similarly, the side surface 37 of the collet 30 is in contact with the side surface 223 of the recess 22 and the inner surface of the side wall portion 273. Further, the side surface 36 of the collet 30 is in contact with the side surface 222 of the recess 22 and the inner surface of the side wall portion 272, and the side surface 38 of the collet 30 is in contact with the side surface 224 of the recess 22 and the side wall portion 274. The collet 30 is held against the holder 20 by the frictional force acting on these contact portions. A space S is formed so as to be surrounded by the rear surface 34 of the collet 30 and the recess 22 of the holder 20 shown in FIG. 6. Hereinafter, this space S will be referred to as the "internal space S".

[0023] 1.3 Operation Example of Semiconductor Manufacturing Apparatus Next, an operation example of the semiconductor manufacturing apparatus 10 of the present embodiment will be described.

[0024] The semiconductor manufacturing apparatus 10 further includes a flipper 40 as shown in FIG. 7(A). As shown in FIG. 7(A), the flipper 40 picks up the semiconductor chip C formed on a predetermined wafer. Then, as shown in FIG. 7(B), after the flipper 40 is turned upside down, the semiconductor chip C is brought into contact with the top surface 320 of the protruding portion 32 of the collet 30. Note that FIG. 7(B) is a cross-sectional view showing a cross-sectional structure along line VII-VII shown in FIG. 2, specifically, a cross-sectional structure including the protruding portion 23. Subsequently, the air in the internal space S is sucked through the vent holes 26a and 26b of the holder 20 by the vacuum pump 50 to make the internal space S negative pressure. Thereby, the collet 30 is held in a state of being in contact with the top surface 230 of the protruding portion 23 of the holder 20. Further, since the air in the internal space S is sucked by the vacuum pump 50, the air in the through holes 33a and 33b of the collet 30 is also sucked, so that the inside of the through holes 33a and 33b of the collet 30 also becomes negative pressure. Thereby, a force for adsorbing the semiconductor chip C in contact with the surface 31 of the collet 30 to the collet 30 is generated. Due to such an adsorption force, the semiconductor chip C is held in a state of being adsorbed to the collet 30. The collet 30 has a hardness that is difficult to deform when the internal space S is in a negative pressure state.

[0025] Thereafter, after the flipper 40 is separated from the semiconductor chip C, while maintaining the state in which the semiconductor chip C is held by the collet 30, it moves above the substrate M as shown in FIG. 8(A). At this time, by recognizing the position of a predetermined mark provided on the semiconductor chip C with the camera 60, the positioning of the semiconductor chip C is performed so that the position on the substrate M where the semiconductor chip C is to be connected and the position of the semiconductor chip C held by the collet 30 coincide in the vertical direction.

[0026] After the positioning of the semiconductor chip C is completed, while the semiconductor chip C is held by the collet 30, the holder 20 is displaced toward the substrate M, and the semiconductor chip C is brought into contact with the substrate M as shown in FIG. 8(B). Then, the holder 20 is pressed against the substrate M with a predetermined external force F. As a result, as shown in FIGS. 9(A) and 9(B), the collet 30 is gradually elastically deformed, so that the protruding portion 23, the stepped portion 24, the stepped portion 25, and the bottom surface 220 of the concave portion 22 of the collet 30 come into contact with the back surface 34 of the collet 30 in this order. Therefore, the pressure applied from the holder 20 to the collet 30 gradually changes.

[0027] Specifically, as shown in FIG. 8(B), when only the protruding portion 23 of the holder 20 is in contact with the back surface 34 of the collet 30, pressure is applied to the collet 30 from the holder 20 only through the protruding portion 23. Therefore, in the state shown in FIG. 8(B), pressure is likely to be applied near the central portion of the semiconductor chip C as shown in FIG. 10(A). In FIGS. 10(A) to 10(D), the portion of the semiconductor chip C where pressure is applied from the collet 30 is hatched. Also, in the hatching, the higher the density of the dots, the greater the applied pressure.

[0028] Subsequently, as shown in FIG. 9(A), when the stepped portion 24 of the holder 20 further comes into contact with the back surface 34 of the collet 30, pressure is applied to the collet 30 from the holder 20 through the protruding portion 23 and the stepped portion 24. Therefore, in the state shown in FIG. 9(A), as shown in FIG. 10(B), pressure is likely to be applied not only near the central portion of the semiconductor chip C but also to the outer peripheral portion thereof.

[0029] Subsequently, as shown in FIG. 9(B), when the stepped portion 25 of the holder 20 further comes into contact with the back surface 34 of the collet 30, pressure is applied to the collet 30 from the holder 20 through the protruding portion 23 and the stepped portions 24 and 25. Therefore, in the state shown in FIG. 9(B), as shown in FIG. 10(C), pressure is likely to be applied to substantially the entire region of the semiconductor chip C. Thereafter, appropriate pressure is applied to the entire region of the semiconductor chip C as shown in FIG. 10(D).

[0030] 1.4 Operation and Effects of the Semiconductor Manufacturing Apparatus According to the First Embodiment As described above, the semiconductor manufacturing apparatus 10 according to the present embodiment includes a holder 20 and a collet 30. The collet 30 is formed of an elastic material and contacts the semiconductor chip C. The holder 20 holds the collet 30. A recess 22 into which the collet 30 is inserted is formed on the surface 21 of the holder 20. A protruding portion 23 having the largest protruding amount from the bottom surface 220 of the recess 22 is formed at the center of the bottom surface 220 of the recess 22 as compared with other portions of the bottom surface 220 of the recess 22. Step portions 24 and 25 having a protruding amount smaller than that of the protruding portion 23 from the bottom surface 220 of the recess 22 are formed around the protruding portion 23. The plurality of step portions 24 and 25 are formed such that the protruding amount gradually decreases toward the outside from the protruding portion 23.

[0031] According to this configuration, when the holder 20 is pressed toward the substrate M, the protruding portion 23, the step portion 24, and the step portion 25 of the holder 20 come into contact with the collet 30 in this order. As a result, as shown in FIGS. 10(A) to 10(D), it becomes possible to gradually apply pressure from the central portion of the semiconductor chip C toward the outside. Thereby, it becomes difficult to form voids between the substrate M and the semiconductor chip C, and thus it becomes possible to more appropriately connect the semiconductor chip onto the substrate M.

[0032] Vent holes 26a and 26b that open to the bottom surface 220 of the recess 22 are formed only in the step portion 24 of the holder 20. Through holes 33a and 33b that penetrate from the surface 31 that contacts the semiconductor chip C of the collet 30 to the back surface 34 that faces the bottom surface 220 of the recess 22 of the holder 20 are formed in the collet 30. By evacuating through the vent holes 26a and 26b of the holder 20 and the through holes 33a and 33b of the collet 30, it is possible to maintain the state in which the semiconductor chip C is in contact with the collet 30.

[0033] In the semiconductor manufacturing apparatus 10 of the present embodiment, when the semiconductor chip C is adsorbed to the collet 30, as shown in FIG. 11, a portion 71 of the semiconductor chip C corresponding to the through holes 33a of the collet 30 may be slightly deformed into a concave shape so as to be sucked into the through holes 33a and 33b of the collet 30. Similar slight deformation of the semiconductor chip C may also occur in a portion facing the through hole 33b of the collet 30. When the semiconductor chip C is slightly deformed in this way, when the semiconductor chip C comes into contact with the substrate M, voids B11 and B12 may be formed between the semiconductor chip C and the substrate M as shown in FIG. 12(A), for example. In this regard, in the semiconductor manufacturing apparatus 10 of the present embodiment, since pressure is gradually applied from the central portion of the semiconductor chip C toward the outside, even if voids B11 and B12 are formed between the semiconductor chip C and the substrate M, as shown in FIGS. 12(B) to 12(D), the voids B11 and B12 are washed away to the outside and eliminated. Therefore, it is difficult for the voids B11 and B12 to remain between the semiconductor chip C and the substrate M.

[0034] As shown in FIG. 13, when the vent hole 26c is formed in the protruding portion 23 and a through hole is formed in the collet 30 so as to correspond to the vent hole 26c, when the semiconductor chip C is adsorbed to the collet 30, the central portion of the semiconductor chip C may be slightly deformed into a concave shape. In this case, as shown in FIG. 14(A), there is a possibility that a void B10 is further formed between the central portion 70 of the semiconductor chip C and the substrate M. When such a void B10 is formed, even if pressure is gradually applied from the central portion 70 of the semiconductor chip C toward the outside as shown in FIGS. 14(B) to 14(D), the void B10 may remain without being washed away to the outside.

[0035] In this regard, in the semiconductor manufacturing apparatus 10 of the present embodiment, as shown in FIGS. 3 and 4, since no vent hole is formed in the protruding portion 23, it is difficult for a void B10 as shown in FIG. 14(C) to be formed. Therefore, it is possible to avoid a situation where such a void B10 remains.

[0036] The collet 30 has a Shore A hardness Ha of 50 or more and a Shore A hardness Ha of 100 or less.

[0037] When the hardness of the collet 30 is low, when the internal space S is made negative pressure by the vacuum pump 50, the collet 30 may bend as shown in FIG. 15, for example. When the collet 30 is bent in this way, when the semiconductor chip C is adsorbed to the collet 30, the semiconductor chip C may bend along the shape of the collet 30. When the semiconductor chip C is bent in this way, when detecting the position of the semiconductor chip C by the camera 60, it may not be possible to accurately detect the position of the semiconductor chip C.

[0038] In this regard, since the collet 30 of the present embodiment has the above-described hardness, even when the internal space S becomes negative pressure, it maintains its original shape as shown in FIG. 8(A). Therefore, when the semiconductor chip C is adsorbed to the collet 30, the semiconductor chip C is difficult to bend, so it is possible to more accurately detect the position of the semiconductor chip C by the camera 60. As a result, it is possible to more accurately connect the semiconductor chip C to the substrate M.

[0039] Note that since the collet 30 has the above-described hardness, when the holder 20 is pressed against the substrate M with a predetermined external force F, the collet 30 elastically deforms as shown in FIGS. 9(A) and (B). Therefore, as shown in FIGS. 10(A) to (C), it is possible to gradually apply pressure from the central portion of the semiconductor chip C toward the outside.

[0040] On the holder 20, side wall portions 271 to 274 are formed that are flush with the side surfaces 221 to 224 of the concave portion 22 and protrude from the surface 21 of the holder 20.

[0041] According to this configuration, the side surfaces 35 to 38 of the collet 30 come into contact with the side wall portions 271 to 274 of the holder 20, respectively, making it easier for the holder 20 to hold the collet 30.

[0042] 1.5 Modification Example of the Semiconductor Manufacturing Apparatus According to the First Embodiment Next, a modification example of the semiconductor manufacturing apparatus according to the first embodiment will be described.

[0043] FIG. 16 is a perspective view showing the perspective structure of the holder 20 of this modification example. As shown in FIG. 16, a protruding portion 23 and a stepped portion 24 are formed in the concave portion 22 of the holder 20 of this modification example. The corner portions 24a to 24d of the stepped portion 24 are each deformed so as to extend toward the corner portions 22a to 22d of the concave portion 22 of the holder 20.

[0044] According to this configuration, when the holder 20 is pressed against the substrate M with a predetermined external force F and the stepped portion 24 comes into contact with the back surface 34 of the collet 30, pressure is likely to be applied from the corner portions 24a to 24d of the stepped portion 24 to the vicinity of the corner portions 30a to 30d of the collet 30. As a result, pressure is likely to be uniformly applied from the holder 20 to the collet 30, so that the semiconductor chip C can be more appropriately connected to the substrate M.

[0045] 2 Second Embodiment Next, the semiconductor manufacturing apparatus 10 according to the second embodiment will be described. Hereinafter, the description will focus on the differences from the semiconductor manufacturing apparatus 10 according to the first embodiment.

[0046] 2.1 Configuration of the Semiconductor Manufacturing Apparatus FIG. 17 is a perspective view showing the perspective structure of the holder 20 of the present embodiment. FIG. 18 is a plan view showing the planar structure of the holder 20 of the present embodiment. As shown in FIGS. 17 and 18, two groove portions 80, 81 and a protruding portion 82 are formed on the bottom surface 220 of the recess 22 of the holder 20. The two groove portions 80, 81 are formed in a long hole shape so as to extend in the Y direction and are arranged side by side in the X direction. Vent holes 83a, 83b are respectively formed at both ends of the groove portion 80. Similarly, vent holes 84a, 84b are respectively formed at both ends of the groove portion 81. The protruding portion 82 is formed between the two groove portions 80, 81. The protruding portion 82 is formed so as to protrude from the bottom surface 220 of the recess 22 and is formed to extend in an elongated shape along the groove portions 80, 81. In the present embodiment, the groove portions 80, 81 are an example of two adjacent predetermined groove portions.

[0047] FIG. 19 is a perspective view showing the perspective structure of the semiconductor manufacturing apparatus 10 of the present embodiment. As shown in FIG. 19, a collet 30 is inserted into the recess 22 of the holder 20. The collet 30 is formed in a rectangular parallelepiped shape. A plurality of through holes 90a to 90d, 91a to 91d are formed in the collet 30. The through holes 90a to 90d are arranged so as to be arranged at a predetermined interval in the Y direction. Similarly, the through holes 91a to 91d are also arranged so as to be arranged at a predetermined interval in the Y direction.

[0048] FIG. 20 is a cross-sectional view showing the cross-sectional structure taken along line XVII-XVII of FIG. 19. As shown in FIG. 20, the plurality of through holes 90a to 90d, 91a to 91d are formed so as to penetrate from the front surface 31 to the back surface 34 of the collet 30. The through holes 90a to 90d are arranged at positions facing the groove portion 80 of the holder 20. The through holes 91a to 91d are arranged at positions facing the groove portion 81 of the holder 20.

[0049] 2.2 Operation Example of Semiconductor Manufacturing Apparatus Next, an operation example of the semiconductor manufacturing apparatus 10 of the present embodiment will be described.

[0050] In the semiconductor manufacturing apparatus 10 of the present embodiment, as shown in FIG. 20, the vacuum pump 50 sucks the air in the internal space S through the vent holes 83a, 83b, 84a, and 84b of the holder 20 to make the internal space S negative pressure. As a result, the collet 30 is held in a state of being adsorbed to the holder 20. Further, when the air in the internal space S is sucked by the vacuum pump 50, the inside of the through holes 90a to 90d and 91a to 91d of the collet 30 also becomes negative pressure. As a result, the semiconductor chip C is held in a state of being adsorbed to the collet 30.

[0051] Subsequently, while maintaining the state in which the semiconductor chip C is held by the collet 30, after the semiconductor chip C is brought into contact with the substrate M, when the holder 20 is pressed against the substrate M with a predetermined external force F, as shown in FIGS. 21(A) and 21(B), the collet 30 gradually deforms. Therefore, the protrusion 82 and the bottom surface 220 of the recess 22 come into contact with the back surface 34 of the collet 30 in this order. For this reason, the pressure applied from the holder 20 to the collet 30 can be gradually changed.

[0052] Specifically, as shown in FIG. 21(A), when only the protrusion 82 of the holder 20 is in contact with the back surface 34 of the collet 30, pressure is applied from the holder 20 to the collet 30 only through the protrusion 82. Therefore, in the state shown in FIG. 21(B), pressure is likely to be applied near the central portion of the semiconductor chip C.

[0053] Subsequently, as shown in FIG. 21(B), when the bottom surface 220 of the recess 22 further comes into contact with the back surface 34 of the collet 30, pressure is applied from the holder 20 to the collet 30 through the protrusion 82 and the bottom surface 220 of the recess 22. Therefore, in the state shown in FIG. 21(B), pressure is more likely to be applied not only near the central portion of the semiconductor chip C but also to the outer peripheral portion thereof.

[0054] 2.3 Operations and Effects of the Semiconductor Manufacturing Apparatus of the Second Embodiment As described above, in the collet 30 of the present embodiment, through holes 90a to 90d and 91a to 91d are formed from the surface 31 in contact with the semiconductor chip C to the back surface 34 facing the plurality of groove portions 80 and 81. By evacuating through the vent holes 83a, 83b, 84a, 84b of the holder 20 and the through holes 90a to 90d, 91a to 91d of the collet 30, the semiconductor chip C can be held in contact with the collet 30. The protruding portion 82 is formed to extend in an elongated shape along two adjacent groove portions 80 and 81.

[0055] According to this configuration, as in the first embodiment, it is possible to gradually apply pressure from the central portion of the semiconductor chip C toward the outside. As a result, it becomes difficult to form voids between the substrate M and the semiconductor chip C, so that the semiconductor chip can be more appropriately connected onto the substrate M.

[0056] 3 Other Embodiments The present disclosure is not limited to the above specific examples.

[0057] For example, the collet 30 may be formed of two or more types of materials having different hardnesses. In the collet 30 of the first embodiment, as shown in FIG. 22(A) for example, the protruding portion 32 in contact with the semiconductor chip C may be formed of the first material M11. Further, in the collet 30 of the first embodiment, the portion excluding the protruding portion 32, that is, the portion 130 facing the bottom surface 220 of the recess 22 of the holder 20 may be formed of the second material M12. As the first material M11 and the second material M12, a rubber elastic body mainly composed of natural rubber or synthetic rubber is used. However, it is preferable to use a rubber elastic body having a lower hardness than the first material M11 for the second material M12 so that the portion 130 of the collet 30 elastically deforms when it comes into contact with the protruding portion 23 and the stepped portions 24 and 25 of the holder 20. In FIG. 22(A), the two-dot chain line L11 indicates the boundary between the first material M11 and the second material M12.

[0058] The collet 30 of the second embodiment may also have a portion 131 that contacts the semiconductor chip C formed of the first material M11, for example, as shown in FIG. 22(B). In FIG. 22(B), the dashed two-dot line L12 indicates the boundary between the first material M11 and the second material M12.

[0059] FIG. 23 is a bottom view showing the bottom surface structure of the protruding portion 32 of the collet 30 of the first embodiment. FIG. 24 is a front view showing the front surface structure of the protruding portion 32 of the collet 30 of the first embodiment. As shown in FIGS. 23 and 24, the protruding portion 32, which is the portion that contacts the semiconductor chip C, may be formed of different materials for its central portion 133 and an outer peripheral portion 134 provided on the outer periphery of the center 133. Specifically, the outer peripheral portion 133 of the protruding portion 32 is formed of the first material M11. Also, the outer peripheral portion 134 of the protruding portion 32 is formed of the second material M12. In FIGS. 23 and 24, the dashed two-dot line L13 indicates the boundary between the first material M11 and the second material M12. Since the semiconductor chip C may bend along the shape of the collet 30 as shown in FIG. 15 when the semiconductor chip C is adsorbed to the collet 30, it is desirable that the first material M11 has a hardness of Shore A hardness Ha50 or more.

[0060] The holder 20 of the first embodiment may not be provided with the step portions 24, 25. Also, the holder 20 of the first embodiment may be provided with one step portion or three or more step portions.

[0061] The holder 20 of the second embodiment may be provided with three or more groove portions, not limited to the two groove portions 80, 81.

[0062] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the gist of the invention. These embodiments and their modifications are included in the scope and gist of the invention and are included in the invention described in the claims and the equivalent scope thereof.

Description of Symbols

[0063] C: Semiconductor chip, M: Substrate (object), 10: Semiconductor manufacturing apparatus, 20: Holder, 22: Recess, 23, 82: Protrusion, 24a to 24d: Corner, 26a, 26b, 83a, 83b, 84a, 84b: Vent hole, 30: Collet, 33a, 33b, 90a to 90d, 91a to 91d: Through hole, 83, 84: Step portion, 80, 81: Groove portion, 271 to 274: Side wall portion.

Claims

1. A semiconductor manufacturing apparatus for connecting a semiconductor chip to an object, a collet formed of an elastic material and contacting the semiconductor chip, and a holder for holding the collet, wherein a recess into which the collet is inserted is formed on a surface of the holder, and a protruding portion having the largest protruding amount from the bottom surface of the recess is formed at a central portion of the bottom surface of the recess as compared with other portions of the bottom surface of the recess Semiconductor manufacturing apparatus.

2. A stepped portion having a protruding amount from the bottom surface of the recess smaller than that of the protruding portion is formed around the protruding portion The semiconductor manufacturing apparatus according to claim 1.

3. A plurality of the stepped portions are formed around the protruding portion, and the plurality of stepped portions are formed such that the protruding amount from the bottom surface of the recess gradually decreases toward the outside from the protruding portion The semiconductor manufacturing apparatus according to claim 2.

4. Vent holes opening to the bottom surface of the recess are formed only in the stepped portion in the holder, a through hole penetrating from a surface of the collet contacting the semiconductor chip to a back surface facing the bottom surface of the recess of the holder is formed in the collet, and the semiconductor chip can be held in contact with the collet by being evacuated through the vent hole of the holder and the through hole of the collet The semiconductor manufacturing apparatus according to claim 2.

5. The collet is formed in a rectangular parallelepiped shape, the recess of the holder is formed in a rectangular parallelepiped shape corresponding to the collet, and the stepped portion is formed in a rectangular parallelepiped shape The semiconductor manufacturing apparatus according to claim 2.

6. Corners of the stepped portion are deformed so as to extend toward corners of the recess of the holder The semiconductor manufacturing apparatus according to claim 5.

7. A plurality of groove portions in a long hole shape are formed on the bottom surface of the recess, vent holes opening to the bottom surfaces of the plurality of groove portions are formed in the holder, a through hole penetrating from a surface of the collet contacting the semiconductor chip to a back surface facing the plurality of groove portions is formed in the collet, and the semiconductor chip can be held in contact with the collet by being evacuated through the vent hole of the holder and the through hole of the collet The semiconductor manufacturing apparatus according to claim 1.

8. The protruding portion is formed between two adjacent predetermined groove portions among the plurality of groove portions, and is formed to extend in an elongated shape along the two predetermined groove portions. The semiconductor manufacturing apparatus according to claim 7.

9. The collet has a Shore A hardness Ha of 50 or more and a Shore A hardness Ha of 100 or less. The semiconductor manufacturing apparatus according to claim 1.

10. The collet is formed of two or more types of materials having different hardnesses. The semiconductor manufacturing apparatus according to claim 1.

11. The two or more types of materials include a first material and a second material having a lower hardness than the first material. A portion of the collet that contacts the semiconductor chip is formed of the first material. A portion of the collet that faces the bottom surface of the recess of the holder is formed of the second material. The semiconductor manufacturing apparatus according to claim 10.

12. The holder is formed with a side wall portion that is flush with the side surface of the recess and protrudes from the surface of the holder. The semiconductor manufacturing apparatus according to claim 1.

13. A method of manufacturing a semiconductor device for connecting a semiconductor chip to an object, Using the semiconductor manufacturing apparatus according to any one of claims 1 to 11, connecting the semiconductor chip in contact with the collet to the object. A method of manufacturing a semiconductor device.

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