Cleaning brush for semiconductor element, cleaning module for semiconductor element, chemical mechanical polishing equipment and cleaning method after chemical mechanical polishing

Abstract

To provide a cleaning brush for semiconductor elements that can reduce or prevent reverse contamination of semiconductor substrates during the cleaning stage after the CMP process, a cleaning module for semiconductor elements that includes the brush, and chemical mechanical polishing equipment and a cleaning method after chemical mechanical polishing that uses the brush.SOLUTION: A cleaning brush for semiconductor elements according to the present invention contains a polymer with a stimuli-responsive ligand.SELECTED DRAWING: Figure 3

Description

Technical Field

[0001] The present invention relates to a cleaning brush for semiconductor elements, a cleaning module for semiconductor elements, chemical mechanical polishing equipment, and a cleaning method after chemical mechanical polishing.

Background Art

[0002] In recent years, due to the miniaturization of electronic devices and the resulting miniaturization of integrated circuits, various methods for forming fine structures such as metal wirings having a width of several nanometers or shallow trench isolation have been studied.

[0003] At the stage of forming such fine structures, a polishing process is performed to create a flat surface of the fine structure, and chemical mechanical polishing (CMP) is one such polishing process. Chemical mechanical polishing is a process in which a polishing slurry containing an abrasive is provided between a semiconductor substrate on which the polishing process is performed and a polishing pad, and then the semiconductor substrate is brought into contact with the polishing pad to flatten the surface of the substrate.

[0004] On the other hand, cleaning is performed using a cleaning brush to physically remove polishing particles such as polishing by-products after the chemical mechanical polishing process.

[0005] However, due to the repeated use of the cleaning brush, contamination by polishing particles accumulates on the cleaning brush, which may conversely contaminate the semiconductor substrate in the repeated cleaning stage, and the replacement cycle of the cleaning brush becomes short.

Summary of the Invention

Problems to be Solved by the Invention

[0006] The present invention has been made in view of the above problems of the prior art, and an object of the present invention is to reduce or prevent reverse contamination of a semiconductor substrate in a cleaning step after a chemical mechanical polishing process, and to provide a cleaning brush for semiconductor elements that can increase the service life. Another object is to provide a cleaning module for semiconductor elements including the above cleaning brush for semiconductor elements, and a chemical mechanical polishing facility including the cleaning module for semiconductor elements. Another object of the present invention is to provide a cleaning method after chemical mechanical polishing using the above cleaning brush for semiconductor elements, the above cleaning module for semiconductor elements, or the above chemical mechanical polishing facility.

Means for Solving the Problems

[0007] A cleaning brush for semiconductor elements according to one aspect of the present invention made to achieve the above object is characterized by including a polymer having a stimulus-responsive ligand.

[0008] The stimulus-responsive ligand preferably includes a functional group that undergoes a reversible change in chemical structure upon stimulation by external energy. Due to the change in the chemical structure of the functional group, the binding force with metal ions changes, and the functional group can adsorb or desorb the metal ions upon stimulation by the external energy. The change in the chemical structure of the functional group can include a change from a cis structure to a trans structure and a change from a trans structure to a cis structure. The change in the chemical structure of the functional group can include a change from a non-ionic structure to an amphoteric ionic structure and a change from an amphoteric ionic structure to a non-ionic structure. The stimulus-responsive ligand can form a coordination bond with metal ions. The external energy can include light, heat, electrical energy, or a combination thereof. The functional group preferably includes a spirothiopyranyl group, a spirooxazinyl group, an oxazinyl group, an azobenzyl group, a boron-dipyrromethene group, derivatives thereof, or combinations thereof. The polymer preferably includes a porous polymer, and the stimulus-responsive ligand is preferably located on the side chain of the porous polymer. The polymer preferably includes polyvinyl alcohol, polyurethane, or a combination thereof having a spirothiopyranyl group, a spirooxazinyl group, an oxazinyl group, an azobenzyl group, a boron-dipyrromethene group, derivatives thereof, or combinations thereof.

[0009] A cleaning brush for a semiconductor element according to another aspect of the present invention made to achieve the above object is characterized by including a porous polymer having a spirothiopyranyl group, a spirooxazinyl group, an oxazinyl group, an azobenzyl group, a boron-dipyrromethene group, derivatives thereof, or combinations thereof.

[0010] The porous polymer preferably includes polyvinyl alcohol, polyurethane, or a combination thereof.

[0011] A cleaning module for a semiconductor element according to one aspect of the present invention made to achieve the above object includes the aforementioned cleaning brush for a semiconductor element and an energy supply source for supplying heat, light, or electrical energy to the cleaning brush for a semiconductor element.

[0012] The cleaning module for a semiconductor element preferably further includes a first nozzle for supplying a first cleaning liquid for removing chemically mechanically polished polishing particles. The cleaning module for a semiconductor element preferably further includes a second nozzle for supplying a second cleaning liquid for removing the polishing particles chemically desorbed from the cleaning brush for a semiconductor element. The first nozzle or the second nozzle may be located in the internal space of the cleaning brush for a semiconductor element or outside the cleaning brush for a semiconductor element.

[0013] A chemical mechanical polishing facility according to an aspect of the present invention made to achieve the above object includes a chemical mechanical polishing module and the above-described cleaning module for semiconductor elements.

[0014] A cleaning method after chemical mechanical polishing according to an aspect of the present invention made to achieve the above object includes a step of supplying a first cleaning liquid to a polished surface on which chemical mechanical polishing has been performed, bringing the above-described cleaning brush for semiconductor elements into contact with the polished surface to remove polishing particles from the polished surface, a step of separating the cleaning brush for semiconductor elements from the polished surface, and a step of supplying external energy to the cleaning brush for semiconductor elements to chemically desorb the polishing particles chemically adsorbed on the cleaning brush for semiconductor elements.

[0015] Preferably, the method further includes a step of supplying a second cleaning liquid to the cleaning brush for semiconductor elements to physically separate the polishing particles chemically desorbed from the cleaning brush for semiconductor elements from the cleaning brush for semiconductor elements. The external energy may be selected from light, heat, electrical energy, or a combination thereof.

Effects of the Invention

[0016] According to the present invention, it is possible to reduce or prevent reverse contamination of a semiconductor substrate in a cleaning step after a chemical mechanical polishing process, and it is possible to increase the service life of a cleaning brush.

Brief Description of the Drawings

[0017]

Figure 1

Figure 2

Figure 3

Figure 4

Figure 5

[0018] Hereinafter, various embodiments of the present invention will be described in detail with reference to the drawings so that those having ordinary knowledge in the technical field to which the present invention pertains can easily implement the present invention. The present invention can be realized in various different forms and is not limited by the embodiments described herein.

[0019] In order to clearly explain the present invention, unnecessary parts in the description are omitted, and the same reference numerals are given to the same or similar components throughout the specification.

[0020] In addition, the sizes and thicknesses of the respective components shown in the drawings are arbitrarily shown for convenience of explanation, and the present invention is not necessarily limited to those shown in the drawings. In the drawings, the thicknesses are enlarged to clearly represent a plurality of layers and regions. And in the drawings, for convenience of explanation, the thicknesses of some layers and regions are exaggerated.

[0021] In addition, when a part such as a layer, a film, a region, or a plate is “on” another part, this includes not only the case where it is “directly on” another part but also the case where there are other parts in between. Conversely, when a part is “directly on” another part, it means that there are no other parts in between. Also, being “on” a reference part means being located above or below the reference part, and does not necessarily mean being located “upward” in the direction opposite to gravity.

[0022] Also, throughout the specification, when a part “includes” a certain component, this means that other components are not excluded and other components can be further included, unless otherwise stated to the contrary.

[0023] Throughout the specification, when referring to "on a plane", it means when viewing the target part from above, and when referring to "in a cross-section", it means when viewing the cross-section obtained by vertically cutting the target part from the side.

[0024] Throughout the specification, "substrate", "semiconductor substrate", "wafer", or "semiconductor wafer" may include a pure semiconductor substrate, a semiconductor substrate having an epitaxial layer, a semiconductor substrate including one or more conductive layers, insulating layers, and / or semiconductor layers, other types of substrates including one or more semiconductor layers, or combinations thereof.

[0025] Hereinafter, a cleaning brush for a semiconductor element according to an embodiment will be described.

[0026] A cleaning brush for a semiconductor element (hereinafter referred to as "cleaning brush") is a tool used for cleaning in the manufacturing process of a semiconductor element, and may include any tool that can perform a physical action such as scrubbing in contact with a predetermined surface (e.g., the surface of a semiconductor substrate), regardless of its shape and size. As an example, the cleaning brush may be a post-chemical mechanical polishing (CMP) cleaning brush used in the cleaning stage after the CMP process.

[0027] FIG. 1 is a schematic diagram showing an example of a cleaning brush for a semiconductor element, and FIG. 2 is a cross-sectional view of the cleaning brush for a semiconductor element of FIG. 1.

[0028] Referring to FIGS. 1 and 2, the cleaning brush 10 has a cylindrical body 11 that rotates in a predetermined direction and a plurality of protrusions 12. The cylindrical body 11 is inserted into a predetermined rotation axis (not shown) and contacts the surface of an object to be cleaned (e.g., a semiconductor substrate) while rotating along a certain direction such as clockwise or counterclockwise. The plurality of protrusions 12 increase the frictional force between the cleaning brush 10 and the object to be cleaned during the rotation of the cleaning brush 10, and effectively separate the contamination particles (e.g., polishing particles after CMP) present on the object to be cleaned from the object to be cleaned. However, the plurality of protrusions 12 may be omitted.

[0029] The cleaning brush 10 has an internal space 13, and a rotating shaft is inserted into the internal space 13, or a first nozzle 112 and / or a second nozzle 132 for supplying a cleaning liquid and / or water described later are provided.

[0030] The cleaning brush 10 contains a polymer, for example, a porous polymer that can well absorb or discharge a liquid such as water or a cleaning liquid without damaging the surface of the object to be cleaned (for example, the surface of a semiconductor substrate). The porous polymer may include, for example, a polyvinyl alcohol (PVA)-based polymer, a polyurethane (PU)-based polymer, or a combination thereof, but is not limited thereto.

[0031] The polymer includes, for example, a main chain containing repeating units derived from vinyl alcohol, urethane, or a combination thereof, and a ligand bonded to the main chain with at least some of the repeating units. The ligand is included in the side chain of the polymer and contains a functional group that forms a coordination bond with a metal ion. For example, in the cleaning step after CMP, the ligand forms a coordination bond with the metal ions in the polishing particles polished by CMP to form a complex compound, thereby effectively adsorbing the polishing particles containing metal ions.

[0032] As an example, the ligand includes a stimulus-responsive ligand. The stimulus-responsive ligand contains a functional group that reversibly changes its chemical structure by the stimulus of external energy. For example, the binding force with a metal ion changes according to the stimulus of external energy (the presence or absence of the stimulus of external energy or the type of external energy), and thereby, the metal ion is adsorbed or desorbed according to the stimulus of external energy. Here, the external energy includes light, heat, electrical energy, or a combination thereof.

[0033] The stimulus-responsive ligand changes structurally in response to external energy. For example, a complex compound formed by the coordination bond between the ligand and a metal ion has a relatively high binding force between the polymer ligand of the cleaning brush 10 and the metal ion, while the supply of external energy such as light, heat, electrical energy, or a combination thereof changes the structure of the functional group, resulting in a weakened binding force with the metal ion. Due to the difference in the binding force between the functional group of such a ligand and the metal ion, the metal ion can be chemically adsorbed or desorbed on the polymer of the cleaning brush 10, and the release of the metal ion can be controlled.

[0034] For example, during the cleaning stage, the stimulus-responsive ligand of the polymer of the cleaning brush 10 forms a complex compound by coordination bonding with a metal ion to chemically adsorb the metal ion, and the stimulus-responsive ligand of the polymer of the cleaning brush 10 after the cleaning stage changes to a structure in which the binding force with the metal ion is weakened (for example, a structure in which the coordination bond with the metal ion is released) due to the stimulation of external energy, and the metal ion is chemically desorbed.

[0035] For example, the change in chemical structure due to the stimulation of external energy includes the change from the cis structure to the trans structure and the reversible change from the trans structure to the cis structure. One of these two is the structure that forms a complex compound with a metal ion and chemically adsorbs the metal ion, and the other of these two is the structure that releases the bond with the metal ion and chemically desorbs the metal ion. For example, irradiating the functional group with the trans structure with UV light as described below changes it to the functional group with the cis structure, and the functional group with the cis structure forms a complex compound with a metal ion (M + ), and furthermore, by irradiating with visible light (Vis), the functional group with the cis structure can be reversibly changed to the functional group with the trans structure, but it is not limited thereto.

[0036] JPEG2025098928000002.jpg66155

[0037] For example, chemical structure changes due to external energy stimuli include changes from a non-ionic structure to a zwitterionic structure and changes from a zwitterionic structure to a non-ionic structure. The zwitterionic structure is a structure that chemically adsorbs metal ions, and the non-ionic structure is a structure that releases the bond with metal ions and chemically desorbs metal ions. For example, irradiating a non-ionic functional group with UV light as described below changes it to a zwitterionic functional group, and the zwitterionic functional group forms a complex compound with a metal ion (M 2+ ), and although it is not limited thereto, the zwitterionic functional group can be irradiated with visible light (Vis) to be changed to a non-ionic functional group.

[0038] JPEG2025098928000003.jpg42149

[0039] Such functional groups are responsive functional groups that, for example, provide one or more electron pairs to a metal substance and are sensitive to external energy such as light, heat, electrical energy, or a combination thereof. For example, it includes an amide group, an amino group, an imine group, a disulfide group, a carbonyl group, a carboxylic group, derivatives thereof, or a combination thereof bonded to the responsive functional group, and for example, a spiropyranyl group, a spirooxazinyl group, an oxazinyl group, an azobenzyl group, a boron dipyrromethenyl group, derivatives thereof, or a combination thereof, but is not limited thereto.

[0040] In this way, the cleaning brush 10 forms a complex compound with metal ions in the polishing particles during the cleaning stage by having a ligand that forms a coordination bond with metal ions in the side chain of the polymer, thereby chemically adsorbing the polishing particles. On the other hand, since the ligand contains a functional group that reversibly changes its chemical structure upon stimulation by external energy, external energy such as light, heat, and / or electrical energy is supplied to the cleaning brush 10 after the cleaning stage to chemically desorb the metal ions chemically adsorbed (e.g., by coordination bonds) to the cleaning brush 10, thereby effectively desorbing the polishing particles from the cleaning brush 10. Such adsorption and desorption of metal ions are reversibly performed according to the presence or absence of stimulation by external energy or the type of external energy.

[0041] As an example, when the external energy is light, the light is UV light, visible light, infrared light, or a combination thereof. The light irradiation is performed, for example, at a intensity of about 1 to 10 mW / cm 2 (based on a wavelength of 300 nm to 400 nm) for about 5 to 20 minutes, but is not limited thereto.

[0042] As an example, when the external energy is heat, for example, heat treatment is required at a temperature of about 50°C or higher, and heat treatment is required at a temperature of about 50 to 90°C for about 10 to 90 minutes within the above range.

[0043] In this way, since the cleaning brush 10 can chemically adsorb and desorb metal ions, it can improve the cleaning efficiency of polishing particles containing metal ions, and at the same time, the polishing particles collected on the cleaning brush 10 can be removed by itself. In addition, this can effectively reduce or prevent the accumulation of contamination due to repeated use of the cleaning brush 10, prevent the object to be cleaned (e.g., a semiconductor substrate) from being contaminated conversely in the repeated cleaning stage, and improve the yield of the semiconductor process.

[0044] In this embodiment, a cylindrical cleaning brush 10 is described as an example, but it is not limited thereto, and the same can be equally applied to a planar cleaning brush, a rod-shaped cleaning brush, a pencil-shaped cleaning brush, or the like.

[0045] Hereinafter, a cleaning module for semiconductor elements including the above-described cleaning brush 10 will be described.

[0046] FIG. 3 is a schematic diagram showing an example of a cleaning module for semiconductor elements according to an embodiment.

[0047] Referring to FIG. 3, a cleaning module 100 for semiconductor elements according to an embodiment includes a cleaning area 110 for cleaning an object to be cleaned, an energy supply area 120 for applying external energy to the used cleaning brush 10, a rinse area 130 for physically removing abrasive particles from the cleaning brush 10, and a drying area 140.

[0048] The cleaning area 110 is an area for cleaning an object to be cleaned using the above-described cleaning brush 10, and includes the cleaning brush 10, fixing means 113 for supporting and fixing the object to be cleaned 114 (for example, a semiconductor substrate such as a wafer), and a first nozzle 112 for supplying a cleaning liquid.

[0049] The cleaning brush 10 is as described above, and is located on one or both surfaces of the object to be cleaned 114 to clean one or both surfaces of the object to be cleaned 114. The cleaning brush 10 is inserted into a rotation axis (not shown) and rotates in a direction opposite to the rotation direction of the object to be cleaned 114 while contacting the surface of the object to be cleaned 114 to remove abrasive particles (for example, metal particles) located on the surface of the object to be cleaned 114 from the object to be cleaned 114.

[0050] The fixing means 113 fixes and rotates the object to be cleaned 114, and includes, for example, a groove into which the object to be cleaned 114 is inserted and a rotation axis that rotates in one direction. There may be a plurality of fixing means 113, and the plurality of fixing means 113 are arranged regularly at a predetermined interval.

[0051] The first nozzle 112 supplies a cleaning liquid and / or water to the object 114 to be cleaned. The first nozzle 112 is located inside the internal space of the cleaning brush 10, or is mounted and used inside the internal space of the cleaning brush 10, or is located outside the cleaning brush 10. For example, it has a shape that extends long in one direction, but is not limited thereto.

[0052] The first nozzle 112 injects the cleaning liquid and / or water toward the cleaning brush 10 side, and the cleaning liquid and / or water are supplied at an appropriate pressure so that the polishing particles are effectively removed. The cleaning area 110 further includes a voltage supply unit (not shown) that applies a predetermined voltage to the first nozzle 112. The cleaning liquid and / or water in the first nozzle 112 are charged by the voltage applied from the voltage supply unit, and the cleaning liquid and / or water are discharged toward the object 114 to be cleaned. The cleaning liquid ejected from the first nozzle 112 contains a metal chelate component in order to effectively remove, for example, polishing particles containing metal ions.

[0053] The energy supply area 120, the rinse area 130, and the drying area 140 are areas for self-cleaning and drying the cleaning brush 10 used in the cleaning area 110.

[0054] The energy supply area 120 includes an energy supply source 121 for supplying heat, light, or electrical energy to the cleaning brush 10. The energy supply source 121 has a shape that is long in one direction so that it can supply heat, light, or electrical energy to the entire cleaning brush 10, but is not limited thereto. The energy supply source 121 is, for example, a heater, a lamp, an electrical device, or a combination thereof, but is not limited thereto.

[0055] As described above, abrasive particles are chemically adsorbed on the cleaning brush 10 used in the cleaning area 110. The cleaning brush 10 on which the abrasive particles are chemically adsorbed receives heat, light, and / or electrical energy from the energy supply source 121, and the abrasive particles are chemically desorbed due to the change in the chemical structure of the stimulus-responsive ligand of the cleaning brush 10 as described above.

[0056] The rinse area 130 physically desorbs the abrasive particles chemically desorbed in the energy supply area 120 from the cleaning brush 10. The rinse area 130 includes a second nozzle 132. The second nozzle 132 supplies cleaning liquid and / or water for physically removing the abrasive particles chemically desorbed from the cleaning brush 10. The second nozzle 132 is located in the internal space of the cleaning brush 10, or is mounted and used in the internal space of the cleaning brush 10, or is located outside the cleaning brush 10, for example, in a shape that extends long in one direction, but is not limited thereto. The second nozzle 132 injects the cleaning liquid and / or water toward the cleaning brush 10, and the cleaning liquid and / or water are supplied at an appropriate pressure so that the abrasive particles desorbed from the cleaning brush 10 are effectively removed.

[0057] The rinse area 130 further includes a voltage supply unit (not shown) that applies a predetermined voltage to the second nozzle 132, and the cleaning liquid and / or water in the second nozzle 132 are charged by the voltage applied from the voltage supply unit and the cleaning liquid and / or water are discharged toward the cleaning brush 10.

[0058] The drying area 140 is an area for drying the cleaning brush 10 self-cleaned in the energy supply area 120 and the rinse area 130. The drying area 140 dries the cleaning brush 10 by, for example, blowing air.

[0059] The cleaning brush 10 dried in the drying area 140 is used to clean the object to be cleaned 114 again in the cleaning area 110, and a cleaning brush 10 with less or no contamination can be obtained by the process of uniquely removing the abrasive particles adsorbed on the cleaning brush 10 as described above.

[0060] Hereinafter, an example of a cleaning method after chemical mechanical polishing (post CMP) using the above-described cleaning module 100 for semiconductor elements will be described with reference to FIG. 3.

[0061] First, the object to be cleaned 114 is fixed using the fixing means 113 in the cleaning area 110. Subsequently, the cleaning brush 10 is disposed on both surfaces of the object to be cleaned 114 (for example, the polished surface where chemical mechanical polishing has been performed), and a cleaning liquid is supplied through the first nozzle 112. Subsequently (or simultaneously with the supply of the cleaning liquid), the cleaning brush 10 is brought into contact with the surface of the object to be cleaned 114 to remove abrasive particles from the object to be cleaned 114. At least a part of the abrasive particles is chemically adsorbed on the cleaning brush 10.

[0062] Next, when the cleaning is completed, the cleaning brush 10 is separated from the object to be cleaned 114.

[0063] Next, the cleaned cleaning brush 10 is moved to the energy supply area 120, and light, heat, and / or electrical energy is supplied from the energy source 121 to chemically desorb the abrasive particles chemically adsorbed on the cleaning brush 10.

[0064] Next, the cleaning brush 10 is moved to the rinse area 130, and a cleaning liquid and / or water is supplied to the cleaning brush 10 from the second nozzle 132. The cleaning liquid and / or water supplied from the second nozzle 132 physically separates the chemically desorbed abrasive particles adhering to the cleaning brush 10.

[0065] Next, the cleaning brush 10 is moved to the drying area 140 to dry the moisture remaining on the cleaning brush 10.

[0066] Next, the dried cleaning brush 10 can be moved back to the cleaning area 110 to repeat the cleaning steps described above.

[0067] Hereinafter, a chemical mechanical polishing (CMP) facility including the above-described cleaning module 100 for semiconductor elements will be described.

[0068] FIG. 4 is a schematic diagram showing an example of a chemical mechanical polishing (CMP) facility according to an embodiment, and FIG. 5 is a schematic diagram showing a chemical mechanical polishing (CMP) module included in the chemical mechanical polishing (CMP) facility.

[0069] Referring to FIG. 4, a chemical mechanical polishing (CMP) facility 300 for semiconductor elements according to an embodiment includes a cleaning module 100 for semiconductor elements and a chemical mechanical polishing module 200.

[0070] The cleaning module 100 for semiconductor elements is as described above.

[0071] Referring to FIG. 5, the chemical mechanical polishing module 200 includes a platen 220, a polishing head 230, a polishing slurry supply unit 240, a polishing pad 250, and a pad conditioner 260.

[0072] The platen 220 is rotatably provided on the surface of a lower base (not shown). The platen 220 receives rotational power from a motor (not shown) disposed within the lower base, and thereby rotates in a fixed direction such as clockwise or counterclockwise about a rotation axis 220S perpendicular to the surface of the platen 220.

[0073] The polishing head 230 is disposed above the platen 220 and supports the object to be polished. The object to be polished is a semiconductor substrate such as a wafer, for example. The polishing head 230 includes a rotation axis 230S for rotating the object to be polished. When polishing is performed, the rotation direction of the polishing head 230 is opposite to the rotation direction of the platen 220.

[0074] The polishing slurry supply unit 240 receives the supply of the polishing slurry from the polishing slurry tank 245 and discharges it onto the polishing pad 250 described later. The polishing slurry supply unit 240 includes a nozzle that supplies the polishing slurry onto the polishing pad 250 during the polishing process, and a voltage supply unit that applies a predetermined voltage to the nozzle. The voltage applied from the voltage supply unit charges the polishing slurry in the nozzle and discharges the polishing slurry toward the polishing pad 250.

[0075] The polishing pad 250 is positioned above the platen 220 so as to be supported by the platen 220. The polishing pad 250 rotates together with the platen 220.

[0076] The polishing pad 250 includes a polishing surface 250S that faces the object to be polished, that is, a semiconductor substrate such as a wafer, fixed to the polishing head 230. When polishing is performed, the polishing surface 250S of the polishing pad 250 directly contacts the object to be polished and chemically and / or mechanically polishes the surface of the object to be polished using the nano-polishing particles in the polishing slurry. Here, the polishing surface 250S of the polishing pad 250 includes the surface that directly contacts the object to be polished and a predetermined depth therefrom, and the predetermined depth is about 10% - 100%, about 20% - 100%, about 30% - 100%, about 40% - 100%, or about 50% - 100% of the thickness of the polishing pad 250.

[0077] The pad conditioner 260 is arranged adjacent to the polishing pad 250 and maintains the surface roughness of the polishing surface 250S of the polishing pad 250 constant so that the object to be polished is effectively polished during the polishing process. For example, the pad conditioner 260 polishes the polishing surface 250S of the polishing pad 250 during or after the polishing of the object to be polished to recover or maintain the surface roughness of the polishing surface 250S of the polishing pad 250. The pad conditioner 260 rotates in a fixed direction such as clockwise or counterclockwise along a predetermined rotation axis.

[0078] The chemical mechanical polishing module 200 further includes a surface roughness measuring device (not shown) that measures the surface roughness of the polishing surface 250S of the polishing pad 250. The surface roughness measuring device realizes a certain polishing performance by precisely measuring the surface roughness of the polishing surface 250S of the polishing pad 250 in real time.

[0079] As described above, the embodiments of the present invention have been described in detail. However, the technical scope of the present invention is not limited thereto, and various modifications and improvements made by those skilled in the art using the basic concept of the present invention also belong to the technical scope of the present invention.

Explanation of Reference Numerals

[0080] 10: Cleaning brush 11: Cylindrical body 12: Protrusion 13: Internal space 100: Cleaning module for semiconductor elements 110: Cleaning area 112: First nozzle 113: Fixing means 114: Object to be cleaned 120: Energy supply area 130: Rinsing area 140: Drying area 200: Chemical mechanical polishing module 300: Chemical mechanical polishing equipment

Claims

1. A cleaning brush for semiconductor devices, comprising a polymer having a stimulus-responsive ligand.

2. 2. The cleaning brush for semiconductor devices according to claim 1, wherein the stimuli-responsive ligand includes a functional group that undergoes a reversible change in chemical structure in response to a stimulus of external energy.

3. The change in the chemical structure of the functional group changes the binding strength with the metal ion, 3. The cleaning brush for semiconductor elements according to claim 2, wherein the functional group adsorbs or desorbs the metal ions in response to the stimulation of the external energy.

4. 3. The cleaning brush for semiconductor elements according to claim 2, wherein the change in the chemical structure of the functional group includes a change from a cis structure to a trans structure and a change from a trans structure to a cis structure.

5. 3. The cleaning brush for semiconductor elements according to claim 2, wherein the change in the chemical structure of the functional group includes a change from a nonionic structure to a zwitterionic structure and a change from a zwitterionic structure to a nonionic structure.

6. 3. The cleaning brush for semiconductor devices according to claim 2, wherein the stimuli-responsive ligand forms a coordinate bond with a metal ion.

7. 3. The cleaning brush for semiconductor devices according to claim 2, wherein the external energy comprises light, heat, electrical energy, or a combination thereof.

8. 3. The cleaning brush for semiconductor elements according to claim 2, wherein the functional group includes a spiropyranyl group, a spirooxazinyl group, an oxazinyl group, an azobenzyl group, a boron-dipyrromethenyl group, a derivative thereof, or a combination thereof.

9. The polymer includes a porous polymer, 2. The cleaning brush for semiconductor devices according to claim 1, wherein the stimuli-responsive ligand is located in a side chain of the porous polymer.

10. 2. The cleaning brush for semiconductor elements according to claim 1, wherein the polymer comprises polyvinyl alcohol, polyurethane, or a combination thereof having a spiropyranyl group, a spirooxazinyl group, an oxazinyl group, an azobenzyl group, a boron-dipyrromethenyl group, a derivative thereof, or a combination thereof.

11. A cleaning brush for semiconductor elements, comprising a porous polymer having a spiropyranyl group, a spirooxazinyl group, an oxazinyl group, an azobenzyl group, a boron-dipyrromethenyl group, a derivative thereof, or a combination thereof.

12. The cleaning brush for semiconductor devices according to claim 11, wherein the porous polymer comprises polyvinyl alcohol, polyurethane, or a combination thereof.

13. A cleaning brush for semiconductor elements according to any one of claims 1 to 12, and an energy supply source for supplying heat, light, or electrical energy to the semiconductor element cleaning brush.

14. 14. The cleaning module for semiconductor devices according to claim 13, further comprising a first nozzle for supplying a first cleaning liquid for removing polishing particles produced by chemical mechanical polishing.

15. 15. The semiconductor device cleaning module of claim 14, further comprising a second nozzle for supplying a second cleaning liquid for removing the abrasive particles chemically desorbed from the semiconductor device cleaning brush.

16. 16. The cleaning module of claim 15, wherein the first nozzle or the second nozzle is located in an internal space of the cleaning brush for semiconductor devices or outside the cleaning brush for semiconductor devices.

17. a chemical mechanical polishing module; A chemical mechanical polishing facility comprising: the semiconductor device cleaning module according to claim 13.

18. supplying a first cleaning liquid to a polished surface that has been subjected to chemical mechanical polishing, and contacting the polished surface with the cleaning brush for semiconductor elements according to any one of claims 1 to 12 to remove abrasive particles from the polished surface; Separating the semiconductor device cleaning brush from the polishing surface; and applying external energy to the cleaning brush for semiconductor devices to chemically desorb the polishing particles chemically adsorbed to the cleaning brush for semiconductor devices.

19. 20. The method of claim 18, further comprising the step of supplying a second cleaning solution to the cleaning brush for semiconductor devices to physically separate the abrasive particles chemically desorbed from the cleaning brush for semiconductor devices from the cleaning brush for semiconductor devices.

20. 20. The method of claim 18, wherein the external energy is selected from light, heat, electrical energy, or a combination thereof.

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